Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (148833) > Сторінка 312 з 2481
| Фото | Назва | Виробник | Інформація |
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| 811600-73670880 | Infineon Technologies |
Description: IC FLASH NOR Packaging: Tray Part Status: Obsolete DigiKey Programmable: Not Verified |
товару немає в наявності |
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TLV493DA1B6MS2GOTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR TLV493DPackaging: Box Interface: USB Voltage - Supply: 5V, USB Sensor Type: Magnetic, Linear, Rotary Position Utilized IC / Part: TLV493D-A1B6 Supplied Contents: Board(s) Embedded: Yes, MCU, 32-Bit Sensing Range: ±130mT Part Status: Active Contents: Board(s) |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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IPDD60R190G7XTMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 13A HDSOP-10Packaging: Tape & Reel (TR) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 4.2A, 10V Power Dissipation (Max): 76W (Tc) Vgs(th) (Max) @ Id: 4V @ 210µA Supplier Device Package: PG-HDSOP-10-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 400 V |
товару немає в наявності |
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IPDD60R125G7XTMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 20A HDSOP-10Packaging: Tape & Reel (TR) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 6.4A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 4V @ 320µA Supplier Device Package: PG-HDSOP-10-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IPDD60R080G7XTMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 29A HDSOP-10Packaging: Tape & Reel (TR) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 9.7A, 10V Power Dissipation (Max): 174W (Tc) Vgs(th) (Max) @ Id: 4V @ 490µA Supplier Device Package: PG-HDSOP-10-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 400 V |
на замовлення 1700 шт: термін постачання 21-31 дні (днів) |
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IPDD60R050G7XTMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 47A HDSOP-10Packaging: Tape & Reel (TR) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 15.9A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 4V @ 800µA Supplier Device Package: PG-HDSOP-10-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IPDD60R190G7XTMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 13A HDSOP-10Packaging: Cut Tape (CT) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 4.2A, 10V Power Dissipation (Max): 76W (Tc) Vgs(th) (Max) @ Id: 4V @ 210µA Supplier Device Package: PG-HDSOP-10-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 400 V |
на замовлення 41 шт: термін постачання 21-31 дні (днів) |
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IPDD60R125G7XTMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 20A HDSOP-10Packaging: Cut Tape (CT) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 6.4A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 4V @ 320µA Supplier Device Package: PG-HDSOP-10-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V |
на замовлення 1085 шт: термін постачання 21-31 дні (днів) |
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IPDD60R050G7XTMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 47A HDSOP-10Packaging: Cut Tape (CT) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 15.9A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 4V @ 800µA Supplier Device Package: PG-HDSOP-10-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 400 V |
на замовлення 3215 шт: термін постачання 21-31 дні (днів) |
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IPN70R1K2P7SATMA1 | Infineon Technologies |
Description: MOSFET N-CH 700V 4.5A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 900mA, 10V Power Dissipation (Max): 6.3W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 40µA Supplier Device Package: PG-SOT223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 174 pF @ 400 V |
на замовлення 1468 шт: термін постачання 21-31 дні (днів) |
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IPN70R2K0P7SATMA1 | Infineon Technologies |
Description: MOSFET N-CH 700V 3A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Power Dissipation (Max): 6W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 30µA Supplier Device Package: PG-SOT223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 400 V |
на замовлення 14553 шт: термін постачання 21-31 дні (днів) |
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IPN70R450P7SATMA1 | Infineon Technologies |
Description: MOSFET N-CH 700V 10A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 2.3A, 10V Power Dissipation (Max): 7.1W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 120µA Supplier Device Package: PG-SOT223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 400 V |
на замовлення 1290 шт: термін постачання 21-31 дні (днів) |
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IPN80R1K2P7ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 800V 4.5A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V Power Dissipation (Max): 6.8W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 80µA Supplier Device Package: PG-SOT223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V |
на замовлення 5817 шт: термін постачання 21-31 дні (днів) |
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IPN80R3K3P7ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 800V 1.9A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc) Rds On (Max) @ Id, Vgs: 3.3Ohm @ 590mA, 10V Power Dissipation (Max): 6.1W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 30µA Supplier Device Package: PG-SOT223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 500 V |
на замовлення 882 шт: термін постачання 21-31 дні (днів) |
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1EDN7511BXUSA1 | Infineon Technologies |
Description: IC GATE DRVR LOW-SIDE SOT23-6Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 20V Input Type: Inverting, Non-Inverting Supplier Device Package: PG-SOT23-6-2 Rise / Fall Time (Typ): 6.5ns, 4.5ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: N-Channel, P-Channel MOSFET Logic Voltage - VIL, VIH: 1.2V, 1.9V Current - Peak Output (Source, Sink): 4A, 8A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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1EDN8511BXUSA1 | Infineon Technologies |
Description: IC GATE DRVR LOW-SIDE SOT23-6Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 8V ~ 20V Input Type: Inverting, Non-Inverting Supplier Device Package: PG-SOT23-6-2 Rise / Fall Time (Typ): 6.5ns, 4.5ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: MOSFET (N-Channel, P-Channel) Logic Voltage - VIL, VIH: 1.2V, 1.9V Current - Peak Output (Source, Sink): 4A, 8A DigiKey Programmable: Not Verified |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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2EDS8165HXUMA1 | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 16SOICPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 20V Input Type: Non-Inverting Supplier Device Package: PG-DSO-16-30 Rise / Fall Time (Typ): 6.5ns, 4.5ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: MOSFET (N-Channel, P-Channel) Logic Voltage - VIL, VIH: -, 1.65V Current - Peak Output (Source, Sink): 1A, 2A Part Status: Discontinued at Digi-Key DigiKey Programmable: Not Verified |
товару немає в наявності |
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BSC019N06NSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 100A TDSON-8 FLPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 1.95mOhm @ 50A, 10V Power Dissipation (Max): 136W (Ta) Vgs(th) (Max) @ Id: 3.3V @ 74µA Supplier Device Package: PG-TDSON-8 FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| DD171N16KKHOSA1 | Infineon Technologies | Description: THYR / DIODE MODULE DK |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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DZ435N40KS01HPSA1 | Infineon Technologies |
Description: DIODE GEN PURP 4KV 700A PB501-1 |
товару немає в наявності |
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DZ950N44KS01HPSA1 | Infineon Technologies |
Description: THYR / DIODE MODULE DK |
товару немає в наявності |
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FF1800R12IE5PBPSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 1800A 20MWPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1800A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 1800 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 98.5 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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FF225R12ME4PBPSA1 | Infineon Technologies |
Description: IGBT MODULE 1200V 450A MODULEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 450 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 13 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| FP50R12N2T4B16BOSA1 | Infineon Technologies |
Description: IGBT MODULE LOW POWER ECONO Packaging: Tray Part Status: Discontinued at Digi-Key |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| FP75R12N2T4B11BPSA1 | Infineon Technologies | Description: IGBT MODULE LOW POWER ECONO |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| FP75R12N2T4B16BOSA1 | Infineon Technologies |
Description: IGBT MODULE LOW POWER ECONO Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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FP75R12N2T4BOSA1 | Infineon Technologies |
Description: IGBT MODULE LOW POWER ECONO Packaging: Tray |
на замовлення 9 шт: термін постачання 21-31 дні (днів) |
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| GATELEAD1110008XPSA1 | Infineon Technologies | Description: HIGH POWER THYR / DIO |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| GATELEADMPWHPK1258XXPSA1 | Infineon Technologies | Description: STD THYR/DIODEN DISC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| GLHUELSE1626XPSA1 | Infineon Technologies | Description: DUMMY 57 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| GLHUELSE1627XPSA1 | Infineon Technologies | Description: DUMMY 57 |
товару немає в наявності |
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ICL5102XUMA1 | Infineon Technologies |
Description: IC LED DRIVER OFFL NO 16DSOPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 1.3MHz Type: AC DC Offline Switcher Operating Temperature: -40°C ~ 125°C (TJ) Applications: LED Lighting Internal Switch(s): No Topology: Half-Bridge Supplier Device Package: PG-DSO-16-23 Dimming: No Voltage - Supply (Min): 8.5V Voltage - Supply (Max): 18V Part Status: Obsolete |
товару немає в наявності |
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IKA15N65ET6XKSA2 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 17A TO220-3Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 69 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 11.5A Supplier Device Package: PG-TO220-3-FP IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 30ns/117ns Switching Energy: 230µJ (on), 110µJ (off) Test Condition: 400V, 11.5A, 47Ohm, 15V Gate Charge: 37 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 17 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 57.5 A Power - Max: 45 W |
товару немає в наявності |
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IMC101TF064XUMA1 | Infineon Technologies |
Description: IC MOTOR DRIVER 3V-5.5V 64LQFPPackaging: Tape & Reel (TR) Package / Case: 64-LQFP Mounting Type: Surface Mount Function: Controller Current - Output: 50mA Interface: Analog, PWM Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 3V ~ 5.5V Applications: Home Appliance Supplier Device Package: PG-LQFP-64-26 Motor Type - AC, DC: AC, Synchronous Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IMC102TF064XUMA1 | Infineon Technologies |
Description: IC MOTOR DRIVER 3V-5.5V 64LQFPPackaging: Tape & Reel (TR) Package / Case: 64-LQFP Mounting Type: Surface Mount Function: Controller Current - Output: 50mA Interface: Analog, PWM Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 3V ~ 5.5V Applications: Home Appliance Supplier Device Package: PG-LQFP-64-26 Motor Type - AC, DC: AC, Synchronous Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IPA60R125CFD7XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 11A TO220Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V Power Dissipation (Max): 32W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 390µA Supplier Device Package: PG-TO220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 400 V |
на замовлення 672 шт: термін постачання 21-31 дні (днів) |
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IPP60R090CFD7XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 25A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 11.4A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 570µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 400 V |
на замовлення 36 шт: термін постачання 21-31 дні (днів) |
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IRF100P218XKMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 209A TO247ACPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 209A (Tc) Rds On (Max) @ Id, Vgs: 1.28mOhm @ 100A, 10V Power Dissipation (Max): 556W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 278µA Supplier Device Package: TO-247AC Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 555 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 25000 pF @ 50 V |
товару немає в наявності |
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IRF100P219XKMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V TO247ACPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 203A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V Power Dissipation (Max): 341W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 278µA Supplier Device Package: TO-247AC Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12020 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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TLE493DW2B6A0HTSA1 | Infineon Technologies |
Description: SEN HALL EFFECT I2C PG-TSOP6-6-8Packaging: Tape & Reel (TR) Features: Programmable Package / Case: SOT-23-6 Thin, TSOT-23-6 Output Type: I2C Mounting Type: Surface Mount Axis: X, Y, Z Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 2.8V ~ 3.5V Technology: Hall Effect Resolution: 12 b Sensing Range: ±160mT ~ ±230mT Current - Supply (Max): 0.13µA Supplier Device Package: PG-TSOP6-6-8 Grade: Automotive Qualification: AEC-Q100 |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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TLE493DW2B6A1HTSA1 | Infineon Technologies |
Description: SEN HALL EFFECT I2C PG-TSOP6-6-8Packaging: Tape & Reel (TR) Features: Programmable Package / Case: SOT-23-6 Thin, TSOT-23-6 Output Type: I2C Mounting Type: Surface Mount Axis: X, Y, Z Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 2.8V ~ 3.5V Technology: Hall Effect Resolution: 12 b Sensing Range: ±160mT ~ ±230mT Current - Supply (Max): 0.13µA Supplier Device Package: PG-TSOP6-6-8 Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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TLE493DW2B6A2HTSA1 | Infineon Technologies |
Description: SEN HALL EFFECT I2C PG-TSOP6-6-8Packaging: Tape & Reel (TR) Features: Programmable Package / Case: SOT-23-6 Thin, TSOT-23-6 Output Type: I2C Mounting Type: Surface Mount Axis: X, Y, Z Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 2.8V ~ 3.5V Technology: Hall Effect Resolution: 12 b Sensing Range: ±160mT ~ ±230mT Current - Supply (Max): 0.13µA Supplier Device Package: PG-TSOP6-6-8 Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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TLE493DW2B6A3HTSA1 | Infineon Technologies |
Description: SEN HALL EFFECT I2C PG-TSOP6-6-8Packaging: Tape & Reel (TR) Features: Programmable Package / Case: SOT-23-6 Thin, TSOT-23-6 Output Type: I2C Mounting Type: Surface Mount Axis: X, Y, Z Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 2.8V ~ 3.5V Technology: Hall Effect Resolution: 12 b Sensing Range: ±160mT ~ ±230mT Current - Supply (Max): 0.13µA Supplier Device Package: PG-TSOP6-6-8 Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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TLE4959CFXHAMA1 | Infineon Technologies |
Description: SENSOR ROTARY PC PINPackaging: Tape & Box (TB) Package / Case: 3-SIP Module Mounting Type: Through Hole Output: Analog Voltage, PWM Operating Temperature: -40°C ~ 175°C (TJ) Termination Style: PC Pin Voltage - Supply: 4V ~ 16V Actuator Type: External Magnet, Not Included Technology: Hall Effect For Measuring: Linear, Rotary Position Supplier Device Package: PG-SSO-3-52 Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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TLE4959CHAMA1 | Infineon Technologies |
Description: SENSOR ROTARY PC PINPackaging: Tape & Box (TB) Package / Case: 3-SIP Module Mounting Type: Through Hole Output: Analog Voltage, PWM Operating Temperature: -40°C ~ 175°C (TJ) Termination Style: PC Pin Voltage - Supply: 4V ~ 16V Actuator Type: External Magnet, Not Included Technology: Hall Effect For Measuring: Linear, Rotary Position Supplier Device Package: PG-SSO-3-52 Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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TLE9252VLCXUMA1 | Infineon Technologies |
Description: IC TRANSCEIVER HALF 1/1 TSON-14Packaging: Tape & Reel (TR) Package / Case: 14-TDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Type: Transceiver Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 5.5V Number of Drivers/Receivers: 1/1 Data Rate: 5Mbps Protocol: CANbus Supplier Device Package: PG-TSON-14-3 Receiver Hysteresis: 30 mV Duplex: Half Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 55000 шт: термін постачання 21-31 дні (днів) |
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TLE94003EPXUMA1 | Infineon Technologies |
Description: IC HALF BRIDGE DRVR 2A TSDSO-14Packaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Interface: Direct Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (3) Voltage - Supply: 3V ~ 5.5V Rds On (Typ): 825mOhm LS, 825mOhm HS Applications: DC Motors, General Purpose Current - Output / Channel: 2A Technology: DMOS Voltage - Load: 5.5V ~ 20V Supplier Device Package: PG-TSDSO-14 Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO Load Type: Inductive |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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TLE94004EPXUMA1 | Infineon Technologies |
Description: IC HALF BRIDGE DRVR 2A TSDSO-14Packaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Interface: Direct Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 3V ~ 5.5V Rds On (Typ): 825mOhm LS, 825mOhm HS Applications: DC Motors, General Purpose Current - Output / Channel: 2A Technology: DMOS Voltage - Load: 5.5V ~ 20V Supplier Device Package: PG-TSDSO-14 Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO Load Type: Inductive Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TLE94104EPXUMA1 | Infineon Technologies |
Description: IC HALF BRIDGE DRVR 2A TSDSO-14Packaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Interface: SPI Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 3V ~ 5.5V Rds On (Typ): 825mOhm LS, 825mOhm HS Applications: DC Motors, General Purpose Current - Output / Channel: 2A Technology: Power MOSFET Voltage - Load: 5.5V ~ 20V Supplier Device Package: PG-TSDSO-14 Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO Load Type: Inductive |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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TLF50211ELXUMA2 | Infineon Technologies |
Description: IC REG BUCK 5V 500MA SSOP-14-3Packaging: Tape & Reel (TR) Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 500mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Frequency - Switching: 2.25MHz Voltage - Input (Max): 45V Topology: Buck Supplier Device Package: PG-SSOP-14-3 Synchronous Rectifier: No Voltage - Input (Min): 4.75V Voltage - Output (Min/Fixed): 5V Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TLS102B0MBHTSA1 | Infineon Technologies |
Description: IC REG LIN POS ADJ 20MA SCT595-5Packaging: Tape & Reel (TR) Package / Case: 6-SMD (5 Leads), Gull Wing Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 20mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 75 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-SCT595-5 Voltage - Output (Max): 20V Voltage - Output (Min/Fixed): 2V Control Features: Enable Part Status: Active PSRR: 100dB (100Hz) Voltage Dropout (Max): 0.3V @ 20mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 1.5 mA Grade: Automotive Qualification: AEC-Q100 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TLS105B0MBHTSA1 | Infineon Technologies |
Description: IC REG LIN POS ADJ 120MA SCT595Packaging: Tape & Reel (TR) Package / Case: 6-SMD (5 Leads), Gull Wing Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 120mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 75 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-SCT595-5 Voltage - Output (Max): 20V Voltage - Output (Min/Fixed): 2V Control Features: Enable Part Status: Active PSRR: 100dB (100Hz) Voltage Dropout (Max): 0.45V @ 50mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 5.5 mA Grade: Automotive Qualification: AEC-Q100 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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TLS850B0TBV50ATMA1 | Infineon Technologies |
Description: IC REG LIN 5V 500MA PG-TO263-5-1Packaging: Tape & Reel (TR) Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 25 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-TO263-5-1 Voltage - Output (Min/Fixed): 5V Control Features: Enable Part Status: Active PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.5V @ 250mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 33 µA Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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TLS850B0TEV33ATMA1 | Infineon Technologies |
Description: IC REG LIN 3.3V 500MA PG-TO252-5Packaging: Tape & Reel (TR) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 25 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-TO252-5 Voltage - Output (Min/Fixed): 3.3V Control Features: Enable Part Status: Active PSRR: 63dB (100Hz) Voltage Dropout (Max): 0.6V @ 250mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 33 µA Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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1ED44176N01FXUMA1 | Infineon Technologies |
Description: IC GATE DRVR LOW-SIDE 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 12.7V ~ 20V Input Type: CMOS, TTL Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 50ns, 25ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: IGBT Logic Voltage - VIL, VIH: 1.2V, 1.7V Current - Peak Output (Source, Sink): 800mA, 1.75A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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1EDN7550BXTSA1 | Infineon Technologies |
Description: IC GATE DRVR HIGH-SIDE SOT23-6Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 84 V Supplier Device Package: PG-SOT23-6 Rise / Fall Time (Typ): 6.5ns, 4.5ns Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: MOSFET (N-Channel, P-Channel) Current - Peak Output (Source, Sink): 4A, 8A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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1EDN8550BXTSA1 | Infineon Technologies |
Description: IC GATE DRVR HIGH-SIDE SOT23-6Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 84 V Supplier Device Package: PG-SOT23-6 Rise / Fall Time (Typ): 6.5ns, 4.5ns Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: MOSFET (N-Channel, P-Channel) Current - Peak Output (Source, Sink): 4A, 8A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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2EDF7275FXUMA1 | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDG DSO16-11Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 20V Input Type: Non-Inverting Supplier Device Package: PG-DSO-16-11 Rise / Fall Time (Typ): 6.5ns, 4.5ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: MOSFET (N-Channel, P-Channel) Logic Voltage - VIL, VIH: -, 1.65V Current - Peak Output (Source, Sink): 4A, 8A DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BGA5H1BN6E6327XTSA1 | Infineon Technologies |
Description: IC RF AMP LTE 2.3GHZ-2.69GHZPackaging: Tape & Reel (TR) Package / Case: 6-XFDFN Mounting Type: Surface Mount Frequency: 2.3GHz ~ 2.69GHz RF Type: LTE Voltage - Supply: 1.5V ~ 3.6V Gain: 18.1dB Current - Supply: 8.5mA Noise Figure: 0.7dB P1dB: -17dBm Test Frequency: 2.5GHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BGA5M1BN6E6327XTSA1 | Infineon Technologies |
Description: IC AMP LTE 1.805GHZ-2.2GHZ TSNP6Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Mounting Type: Surface Mount Frequency: 1.805GHz ~ 2.2GHz RF Type: LTE Voltage - Supply: 1.5V ~ 3.6V Gain: 19.3dB Current - Supply: 9.5mA Noise Figure: 0.65dB P1dB: -17dBm Test Frequency: 2GHz Supplier Device Package: PG-TSNP-6-10 Part Status: Last Time Buy |
товару немає в наявності |
В кошику од. на суму грн. |
| 811600-73670880 |
Виробник: Infineon Technologies
Description: IC FLASH NOR
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC FLASH NOR
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| TLV493DA1B6MS2GOTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR TLV493D
Packaging: Box
Interface: USB
Voltage - Supply: 5V, USB
Sensor Type: Magnetic, Linear, Rotary Position
Utilized IC / Part: TLV493D-A1B6
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: ±130mT
Part Status: Active
Contents: Board(s)
Description: EVAL BOARD FOR TLV493D
Packaging: Box
Interface: USB
Voltage - Supply: 5V, USB
Sensor Type: Magnetic, Linear, Rotary Position
Utilized IC / Part: TLV493D-A1B6
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: ±130mT
Part Status: Active
Contents: Board(s)
на замовлення 10 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2164.82 грн |
| IPDD60R190G7XTMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 13A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 4.2A, 10V
Power Dissipation (Max): 76W (Tc)
Vgs(th) (Max) @ Id: 4V @ 210µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 400 V
Description: MOSFET N-CH 600V 13A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 4.2A, 10V
Power Dissipation (Max): 76W (Tc)
Vgs(th) (Max) @ Id: 4V @ 210µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| IPDD60R125G7XTMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 20A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6.4A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
Description: MOSFET N-CH 600V 20A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6.4A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| IPDD60R080G7XTMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 29A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 9.7A, 10V
Power Dissipation (Max): 174W (Tc)
Vgs(th) (Max) @ Id: 4V @ 490µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 400 V
Description: MOSFET N-CH 600V 29A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 9.7A, 10V
Power Dissipation (Max): 174W (Tc)
Vgs(th) (Max) @ Id: 4V @ 490µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 400 V
на замовлення 1700 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1700+ | 233.82 грн |
| IPDD60R050G7XTMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 47A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 15.9A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 400 V
Description: MOSFET N-CH 600V 47A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 15.9A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| IPDD60R190G7XTMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 13A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 4.2A, 10V
Power Dissipation (Max): 76W (Tc)
Vgs(th) (Max) @ Id: 4V @ 210µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 400 V
Description: MOSFET N-CH 600V 13A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 4.2A, 10V
Power Dissipation (Max): 76W (Tc)
Vgs(th) (Max) @ Id: 4V @ 210µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 400 V
на замовлення 41 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 245.57 грн |
| 10+ | 161.75 грн |
| IPDD60R125G7XTMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 20A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6.4A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
Description: MOSFET N-CH 600V 20A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6.4A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
на замовлення 1085 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 190.81 грн |
| 10+ | 155.90 грн |
| 100+ | 140.96 грн |
| IPDD60R050G7XTMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 47A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 15.9A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 400 V
Description: MOSFET N-CH 600V 47A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 15.9A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 400 V
на замовлення 3215 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 664.85 грн |
| 10+ | 490.34 грн |
| 100+ | 374.31 грн |
| 500+ | 323.05 грн |
| IPN70R1K2P7SATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 4.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 900mA, 10V
Power Dissipation (Max): 6.3W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 174 pF @ 400 V
Description: MOSFET N-CH 700V 4.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 900mA, 10V
Power Dissipation (Max): 6.3W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 174 pF @ 400 V
на замовлення 1468 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 47.06 грн |
| 10+ | 39.22 грн |
| 100+ | 27.15 грн |
| 500+ | 21.29 грн |
| 1000+ | 18.12 грн |
| IPN70R2K0P7SATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 400 V
Description: MOSFET N-CH 700V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 400 V
на замовлення 14553 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 58.18 грн |
| 10+ | 34.85 грн |
| 100+ | 22.49 грн |
| 500+ | 16.12 грн |
| 1000+ | 14.50 грн |
| IPN70R450P7SATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 10A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2.3A, 10V
Power Dissipation (Max): 7.1W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 120µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 400 V
Description: MOSFET N-CH 700V 10A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2.3A, 10V
Power Dissipation (Max): 7.1W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 120µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 400 V
на замовлення 1290 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 88.13 грн |
| 10+ | 53.15 грн |
| 100+ | 34.98 грн |
| 500+ | 25.51 грн |
| 1000+ | 23.15 грн |
| IPN80R1K2P7ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 4.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 6.8W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
Description: MOSFET N-CH 800V 4.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 6.8W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
на замовлення 5817 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 108.67 грн |
| 10+ | 66.16 грн |
| 100+ | 44.00 грн |
| 500+ | 32.35 грн |
| 1000+ | 29.48 грн |
| IPN80R3K3P7ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 1.9A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 590mA, 10V
Power Dissipation (Max): 6.1W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 500 V
Description: MOSFET N-CH 800V 1.9A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 590mA, 10V
Power Dissipation (Max): 6.1W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 500 V
на замовлення 882 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 59.90 грн |
| 10+ | 46.88 грн |
| 100+ | 31.31 грн |
| 500+ | 22.68 грн |
| 1EDN7511BXUSA1 |
![]() |
Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: PG-SOT23-6-2
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: PG-SOT23-6-2
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 25.49 грн |
| 6000+ | 23.92 грн |
| 1EDN8511BXUSA1 |
![]() |
Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 8V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: PG-SOT23-6-2
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 4A, 8A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 8V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: PG-SOT23-6-2
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 4A, 8A
DigiKey Programmable: Not Verified
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 19.01 грн |
| 6000+ | 17.83 грн |
| 2EDS8165HXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 1A, 2A
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 1A, 2A
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| BSC019N06NSATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 100A TDSON-8 FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Ta)
Vgs(th) (Max) @ Id: 3.3V @ 74µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 30 V
Description: MOSFET N-CH 60V 100A TDSON-8 FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Ta)
Vgs(th) (Max) @ Id: 3.3V @ 74µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 30 V
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| DD171N16KKHOSA1 |
Виробник: Infineon Technologies
Description: THYR / DIODE MODULE DK
Description: THYR / DIODE MODULE DK
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| DZ435N40KS01HPSA1 |
![]() |
Виробник: Infineon Technologies
Description: DIODE GEN PURP 4KV 700A PB501-1
Description: DIODE GEN PURP 4KV 700A PB501-1
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| DZ950N44KS01HPSA1 |
![]() |
Виробник: Infineon Technologies
Description: THYR / DIODE MODULE DK
Description: THYR / DIODE MODULE DK
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| FF1800R12IE5PBPSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 1800A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1800A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 98.5 nF @ 25 V
Description: IGBT MOD 1200V 1800A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1800A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 98.5 nF @ 25 V
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| FF225R12ME4PBPSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 450A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
Description: IGBT MODULE 1200V 450A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
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| FP50R12N2T4B16BOSA1 |
Виробник: Infineon Technologies
Description: IGBT MODULE LOW POWER ECONO
Packaging: Tray
Part Status: Discontinued at Digi-Key
Description: IGBT MODULE LOW POWER ECONO
Packaging: Tray
Part Status: Discontinued at Digi-Key
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| FP75R12N2T4B11BPSA1 |
Виробник: Infineon Technologies
Description: IGBT MODULE LOW POWER ECONO
Description: IGBT MODULE LOW POWER ECONO
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| FP75R12N2T4BOSA1 |
на замовлення 9 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 10612.77 грн |
| GATELEAD1110008XPSA1 |
Виробник: Infineon Technologies
Description: HIGH POWER THYR / DIO
Description: HIGH POWER THYR / DIO
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| GATELEADMPWHPK1258XXPSA1 |
Виробник: Infineon Technologies
Description: STD THYR/DIODEN DISC
Description: STD THYR/DIODEN DISC
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| GLHUELSE1626XPSA1 |
Виробник: Infineon Technologies
Description: DUMMY 57
Description: DUMMY 57
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| GLHUELSE1627XPSA1 |
Виробник: Infineon Technologies
Description: DUMMY 57
Description: DUMMY 57
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| ICL5102XUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC LED DRIVER OFFL NO 16DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.3MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: LED Lighting
Internal Switch(s): No
Topology: Half-Bridge
Supplier Device Package: PG-DSO-16-23
Dimming: No
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Part Status: Obsolete
Description: IC LED DRIVER OFFL NO 16DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.3MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: LED Lighting
Internal Switch(s): No
Topology: Half-Bridge
Supplier Device Package: PG-DSO-16-23
Dimming: No
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Part Status: Obsolete
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| IKA15N65ET6XKSA2 |
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Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 17A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 69 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 11.5A
Supplier Device Package: PG-TO220-3-FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/117ns
Switching Energy: 230µJ (on), 110µJ (off)
Test Condition: 400V, 11.5A, 47Ohm, 15V
Gate Charge: 37 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 57.5 A
Power - Max: 45 W
Description: IGBT TRENCH FS 650V 17A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 69 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 11.5A
Supplier Device Package: PG-TO220-3-FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/117ns
Switching Energy: 230µJ (on), 110µJ (off)
Test Condition: 400V, 11.5A, 47Ohm, 15V
Gate Charge: 37 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 57.5 A
Power - Max: 45 W
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| IMC101TF064XUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 3V-5.5V 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Controller
Current - Output: 50mA
Interface: Analog, PWM
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 5.5V
Applications: Home Appliance
Supplier Device Package: PG-LQFP-64-26
Motor Type - AC, DC: AC, Synchronous
Part Status: Active
Description: IC MOTOR DRIVER 3V-5.5V 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Controller
Current - Output: 50mA
Interface: Analog, PWM
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 5.5V
Applications: Home Appliance
Supplier Device Package: PG-LQFP-64-26
Motor Type - AC, DC: AC, Synchronous
Part Status: Active
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| IMC102TF064XUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 3V-5.5V 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Controller
Current - Output: 50mA
Interface: Analog, PWM
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 5.5V
Applications: Home Appliance
Supplier Device Package: PG-LQFP-64-26
Motor Type - AC, DC: AC, Synchronous
Part Status: Active
Description: IC MOTOR DRIVER 3V-5.5V 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Controller
Current - Output: 50mA
Interface: Analog, PWM
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 5.5V
Applications: Home Appliance
Supplier Device Package: PG-LQFP-64-26
Motor Type - AC, DC: AC, Synchronous
Part Status: Active
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| IPA60R125CFD7XKSA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 11A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 400 V
Description: MOSFET N-CH 600V 11A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 400 V
на замовлення 672 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 310.61 грн |
| 50+ | 153.16 грн |
| 100+ | 139.07 грн |
| 500+ | 107.35 грн |
| IPP60R090CFD7XKSA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 25A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 11.4A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 570µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 400 V
Description: MOSFET N-CH 600V 25A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 11.4A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 570µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 400 V
на замовлення 36 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 371.36 грн |
| IRF100P218XKMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 209A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 209A (Tc)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 100A, 10V
Power Dissipation (Max): 556W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 278µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 555 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25000 pF @ 50 V
Description: MOSFET N-CH 100V 209A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 209A (Tc)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 100A, 10V
Power Dissipation (Max): 556W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 278µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 555 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25000 pF @ 50 V
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| IRF100P219XKMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 203A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 278µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12020 pF @ 50 V
Description: MOSFET N-CH 100V TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 203A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 278µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12020 pF @ 50 V
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| TLE493DW2B6A0HTSA1 |
![]() |
Виробник: Infineon Technologies
Description: SEN HALL EFFECT I2C PG-TSOP6-6-8
Packaging: Tape & Reel (TR)
Features: Programmable
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Resolution: 12 b
Sensing Range: ±160mT ~ ±230mT
Current - Supply (Max): 0.13µA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
Description: SEN HALL EFFECT I2C PG-TSOP6-6-8
Packaging: Tape & Reel (TR)
Features: Programmable
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Resolution: 12 b
Sensing Range: ±160mT ~ ±230mT
Current - Supply (Max): 0.13µA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 71.95 грн |
| 6000+ | 67.12 грн |
| 9000+ | 65.94 грн |
| TLE493DW2B6A1HTSA1 |
![]() |
Виробник: Infineon Technologies
Description: SEN HALL EFFECT I2C PG-TSOP6-6-8
Packaging: Tape & Reel (TR)
Features: Programmable
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Resolution: 12 b
Sensing Range: ±160mT ~ ±230mT
Current - Supply (Max): 0.13µA
Supplier Device Package: PG-TSOP6-6-8
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: SEN HALL EFFECT I2C PG-TSOP6-6-8
Packaging: Tape & Reel (TR)
Features: Programmable
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Resolution: 12 b
Sensing Range: ±160mT ~ ±230mT
Current - Supply (Max): 0.13µA
Supplier Device Package: PG-TSOP6-6-8
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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| TLE493DW2B6A2HTSA1 |
![]() |
Виробник: Infineon Technologies
Description: SEN HALL EFFECT I2C PG-TSOP6-6-8
Packaging: Tape & Reel (TR)
Features: Programmable
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Resolution: 12 b
Sensing Range: ±160mT ~ ±230mT
Current - Supply (Max): 0.13µA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
Description: SEN HALL EFFECT I2C PG-TSOP6-6-8
Packaging: Tape & Reel (TR)
Features: Programmable
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Resolution: 12 b
Sensing Range: ±160mT ~ ±230mT
Current - Supply (Max): 0.13µA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
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| TLE493DW2B6A3HTSA1 |
![]() |
Виробник: Infineon Technologies
Description: SEN HALL EFFECT I2C PG-TSOP6-6-8
Packaging: Tape & Reel (TR)
Features: Programmable
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Resolution: 12 b
Sensing Range: ±160mT ~ ±230mT
Current - Supply (Max): 0.13µA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
Description: SEN HALL EFFECT I2C PG-TSOP6-6-8
Packaging: Tape & Reel (TR)
Features: Programmable
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Resolution: 12 b
Sensing Range: ±160mT ~ ±230mT
Current - Supply (Max): 0.13µA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
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| TLE4959CFXHAMA1 |
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Виробник: Infineon Technologies
Description: SENSOR ROTARY PC PIN
Packaging: Tape & Box (TB)
Package / Case: 3-SIP Module
Mounting Type: Through Hole
Output: Analog Voltage, PWM
Operating Temperature: -40°C ~ 175°C (TJ)
Termination Style: PC Pin
Voltage - Supply: 4V ~ 16V
Actuator Type: External Magnet, Not Included
Technology: Hall Effect
For Measuring: Linear, Rotary Position
Supplier Device Package: PG-SSO-3-52
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: SENSOR ROTARY PC PIN
Packaging: Tape & Box (TB)
Package / Case: 3-SIP Module
Mounting Type: Through Hole
Output: Analog Voltage, PWM
Operating Temperature: -40°C ~ 175°C (TJ)
Termination Style: PC Pin
Voltage - Supply: 4V ~ 16V
Actuator Type: External Magnet, Not Included
Technology: Hall Effect
For Measuring: Linear, Rotary Position
Supplier Device Package: PG-SSO-3-52
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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| TLE4959CHAMA1 |
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Виробник: Infineon Technologies
Description: SENSOR ROTARY PC PIN
Packaging: Tape & Box (TB)
Package / Case: 3-SIP Module
Mounting Type: Through Hole
Output: Analog Voltage, PWM
Operating Temperature: -40°C ~ 175°C (TJ)
Termination Style: PC Pin
Voltage - Supply: 4V ~ 16V
Actuator Type: External Magnet, Not Included
Technology: Hall Effect
For Measuring: Linear, Rotary Position
Supplier Device Package: PG-SSO-3-52
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: SENSOR ROTARY PC PIN
Packaging: Tape & Box (TB)
Package / Case: 3-SIP Module
Mounting Type: Through Hole
Output: Analog Voltage, PWM
Operating Temperature: -40°C ~ 175°C (TJ)
Termination Style: PC Pin
Voltage - Supply: 4V ~ 16V
Actuator Type: External Magnet, Not Included
Technology: Hall Effect
For Measuring: Linear, Rotary Position
Supplier Device Package: PG-SSO-3-52
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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| TLE9252VLCXUMA1 |
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Виробник: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 TSON-14
Packaging: Tape & Reel (TR)
Package / Case: 14-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-TSON-14-3
Receiver Hysteresis: 30 mV
Duplex: Half
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC TRANSCEIVER HALF 1/1 TSON-14
Packaging: Tape & Reel (TR)
Package / Case: 14-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-TSON-14-3
Receiver Hysteresis: 30 mV
Duplex: Half
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 55000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 94.92 грн |
| TLE94003EPXUMA1 |
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Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRVR 2A TSDSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: Direct
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 825mOhm LS, 825mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 2A
Technology: DMOS
Voltage - Load: 5.5V ~ 20V
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Description: IC HALF BRIDGE DRVR 2A TSDSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: Direct
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 825mOhm LS, 825mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 2A
Technology: DMOS
Voltage - Load: 5.5V ~ 20V
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 70.82 грн |
| 6000+ | 66.76 грн |
| TLE94004EPXUMA1 |
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Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRVR 2A TSDSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: Direct
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 825mOhm LS, 825mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 2A
Technology: DMOS
Voltage - Load: 5.5V ~ 20V
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Active
Description: IC HALF BRIDGE DRVR 2A TSDSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: Direct
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 825mOhm LS, 825mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 2A
Technology: DMOS
Voltage - Load: 5.5V ~ 20V
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 70.11 грн |
| TLE94104EPXUMA1 |
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Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRVR 2A TSDSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 825mOhm LS, 825mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 2A
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 20V
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Description: IC HALF BRIDGE DRVR 2A TSDSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 825mOhm LS, 825mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 2A
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 20V
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
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| TLF50211ELXUMA2 |
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Виробник: Infineon Technologies
Description: IC REG BUCK 5V 500MA SSOP-14-3
Packaging: Tape & Reel (TR)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.25MHz
Voltage - Input (Max): 45V
Topology: Buck
Supplier Device Package: PG-SSOP-14-3
Synchronous Rectifier: No
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 5V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG BUCK 5V 500MA SSOP-14-3
Packaging: Tape & Reel (TR)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.25MHz
Voltage - Input (Max): 45V
Topology: Buck
Supplier Device Package: PG-SSOP-14-3
Synchronous Rectifier: No
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 5V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 95.99 грн |
| TLS102B0MBHTSA1 |
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Виробник: Infineon Technologies
Description: IC REG LIN POS ADJ 20MA SCT595-5
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 20mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 2V
Control Features: Enable
Part Status: Active
PSRR: 100dB (100Hz)
Voltage Dropout (Max): 0.3V @ 20mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 1.5 mA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LIN POS ADJ 20MA SCT595-5
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 20mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 2V
Control Features: Enable
Part Status: Active
PSRR: 100dB (100Hz)
Voltage Dropout (Max): 0.3V @ 20mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 1.5 mA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 24.47 грн |
| TLS105B0MBHTSA1 |
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Виробник: Infineon Technologies
Description: IC REG LIN POS ADJ 120MA SCT595
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 120mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 2V
Control Features: Enable
Part Status: Active
PSRR: 100dB (100Hz)
Voltage Dropout (Max): 0.45V @ 50mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 5.5 mA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LIN POS ADJ 120MA SCT595
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 120mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 2V
Control Features: Enable
Part Status: Active
PSRR: 100dB (100Hz)
Voltage Dropout (Max): 0.45V @ 50mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 5.5 mA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 27.10 грн |
| 6000+ | 25.46 грн |
| TLS850B0TBV50ATMA1 |
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Виробник: Infineon Technologies
Description: IC REG LIN 5V 500MA PG-TO263-5-1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 25 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-5-1
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 33 µA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LIN 5V 500MA PG-TO263-5-1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 25 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-5-1
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 33 µA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 88.46 грн |
| 2000+ | 82.97 грн |
| TLS850B0TEV33ATMA1 |
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Виробник: Infineon Technologies
Description: IC REG LIN 3.3V 500MA PG-TO252-5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 25 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 63dB (100Hz)
Voltage Dropout (Max): 0.6V @ 250mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 33 µA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LIN 3.3V 500MA PG-TO252-5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 25 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 63dB (100Hz)
Voltage Dropout (Max): 0.6V @ 250mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 33 µA
Grade: Automotive
Qualification: AEC-Q100
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од. на суму грн.
| 1ED44176N01FXUMA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 12.7V ~ 20V
Input Type: CMOS, TTL
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 50ns, 25ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.2V, 1.7V
Current - Peak Output (Source, Sink): 800mA, 1.75A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 12.7V ~ 20V
Input Type: CMOS, TTL
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 50ns, 25ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.2V, 1.7V
Current - Peak Output (Source, Sink): 800mA, 1.75A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 31.89 грн |
| 1EDN7550BXTSA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 84 V
Supplier Device Package: PG-SOT23-6
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel, P-Channel)
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HIGH-SIDE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 84 V
Supplier Device Package: PG-SOT23-6
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel, P-Channel)
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 21.92 грн |
| 6000+ | 20.58 грн |
| 1EDN8550BXTSA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 84 V
Supplier Device Package: PG-SOT23-6
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel, P-Channel)
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HIGH-SIDE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 84 V
Supplier Device Package: PG-SOT23-6
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel, P-Channel)
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 21.92 грн |
| 2EDF7275FXUMA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDG DSO16-11
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDG DSO16-11
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
DigiKey Programmable: Not Verified
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| BGA5H1BN6E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC RF AMP LTE 2.3GHZ-2.69GHZ
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.69GHz
RF Type: LTE
Voltage - Supply: 1.5V ~ 3.6V
Gain: 18.1dB
Current - Supply: 8.5mA
Noise Figure: 0.7dB
P1dB: -17dBm
Test Frequency: 2.5GHz
Description: IC RF AMP LTE 2.3GHZ-2.69GHZ
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.69GHz
RF Type: LTE
Voltage - Supply: 1.5V ~ 3.6V
Gain: 18.1dB
Current - Supply: 8.5mA
Noise Figure: 0.7dB
P1dB: -17dBm
Test Frequency: 2.5GHz
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| BGA5M1BN6E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC AMP LTE 1.805GHZ-2.2GHZ TSNP6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.805GHz ~ 2.2GHz
RF Type: LTE
Voltage - Supply: 1.5V ~ 3.6V
Gain: 19.3dB
Current - Supply: 9.5mA
Noise Figure: 0.65dB
P1dB: -17dBm
Test Frequency: 2GHz
Supplier Device Package: PG-TSNP-6-10
Part Status: Last Time Buy
Description: IC AMP LTE 1.805GHZ-2.2GHZ TSNP6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.805GHz ~ 2.2GHz
RF Type: LTE
Voltage - Supply: 1.5V ~ 3.6V
Gain: 19.3dB
Current - Supply: 9.5mA
Noise Figure: 0.65dB
P1dB: -17dBm
Test Frequency: 2GHz
Supplier Device Package: PG-TSNP-6-10
Part Status: Last Time Buy
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