Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (123059) > Сторінка 313 з 2051
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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| CYTT21402-48LQI36 | Infineon Technologies |
Description: IC MCU 32BIT 48QFN Packaging: Tray Package / Case: 48-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: I²C, SPI Voltage - Supply: 1.71V ~ 5.5V Resolution (Bits): 32 b Supplier Device Package: 48-QFN (6x6) Touchscreen: 2 Wire Capacitive |
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S29PL032J55BAI120 | Infineon Technologies | Description: IC FLASH 32MBIT PARALLEL 48FBGA |
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| CYTT21401-44LQI28T | Infineon Technologies |
Description: IC TSC 2 WIRE CAP 44-QFNPackaging: Tape & Reel (TR) Package / Case: 44-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C, SPI Voltage - Supply: 1.71V ~ 5.5V Resolution (Bits): 32 b Supplier Device Package: 44-QFN (5x5) Touchscreen: 2 Wire Capacitive Part Status: Obsolete |
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| CYTT21402-48LQI36T | Infineon Technologies |
Description: IC MCU 32BIT 48QFN Packaging: Tape & Reel (TR) Package / Case: 48-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: I²C, SPI Voltage - Supply: 1.71V ~ 5.5V Resolution (Bits): 32 b Supplier Device Package: 48-QFN (6x6) Touchscreen: 2 Wire Capacitive Part Status: Obsolete |
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| CYTT21403-56LQI44 | Infineon Technologies |
Description: IC TSC 2 WIRE CAP 56-QFNPackaging: Tray Package / Case: 56-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C, SPI Voltage - Supply: 1.71V ~ 5.5V Resolution (Bits): 32 b Supplier Device Package: 56-QFN (6x6) Touchscreen: 2 Wire Capacitive Part Status: Obsolete |
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| CYTT21403-56LQI44T | Infineon Technologies |
Description: IC TSC 2 WIRE CAP 56-QFNPackaging: Tape & Reel (TR) Package / Case: 56-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C, SPI Voltage - Supply: 1.71V ~ 5.5V Resolution (Bits): 32 b Supplier Device Package: 56-QFN (6x6) Touchscreen: 2 Wire Capacitive Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TT21401-44LQI28 | Infineon Technologies |
Description: IC MCU 32BIT 44QFN Packaging: Tray Package / Case: 44-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 500kHz Core Processor: ARM® Cortex® Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I²C, SPI Supplier Device Package: 44-QFN (5x5) Part Status: Obsolete Number of I/O: 28 DigiKey Programmable: Not Verified |
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| TT21401-44LQI33 | Infineon Technologies |
Description: IC MCU 32BIT 44QFN Packaging: Tray Package / Case: 44-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 500kHz Core Processor: ARM® Cortex® Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I²C, SPI Supplier Device Package: 44-QFN (5x5) Part Status: Obsolete Number of I/O: 33 DigiKey Programmable: Not Verified |
товару немає в наявності |
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| TT21401-44LQI35 | Infineon Technologies |
Description: IC MCU 32BIT 44QFN Packaging: Tray Package / Case: 44-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 500kHz Core Processor: ARM® Cortex® Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I²C, SPI Supplier Device Package: 44-QFN (5x5) Part Status: Obsolete Number of I/O: 35 DigiKey Programmable: Not Verified |
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| TT21401-48LQI36 | Infineon Technologies |
Description: IC MCU 32BIT 48QFN Packaging: Tray Package / Case: 48-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 500kHz Core Processor: ARM® Cortex® Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I²C, SPI Supplier Device Package: 48-QFN (6x6) Part Status: Obsolete Number of I/O: 36 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TT21401-56LQI40 | Infineon Technologies |
Description: IC MCU 32BIT 56QFN Packaging: Tray Package / Case: 56-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 500kHz Core Processor: ARM® Cortex® Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I²C, SPI Supplier Device Package: 56-QFN (6x6) Part Status: Obsolete Number of I/O: 40 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TT21401-56LQI44 | Infineon Technologies |
Description: IC MCU 32BIT 56QFN Packaging: Tray Package / Case: 56-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 500kHz Core Processor: ARM® Cortex® Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I²C, SPI Supplier Device Package: 56-QFN (6x6) Part Status: Obsolete Number of I/O: 44 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TT21401-56LQI48 | Infineon Technologies |
Description: IC MCU 32BIT 56QFN Packaging: Tray Package / Case: 56-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 500kHz Core Processor: ARM® Cortex® Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I²C, SPI Supplier Device Package: 56-QFN (6x6) Part Status: Obsolete Number of I/O: 48 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TT21402-44LQI28 | Infineon Technologies |
Description: IC MCU 32BIT 44QFN Packaging: Tray Package / Case: 44-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 500kHz Core Processor: ARM® Cortex® Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I²C, SPI Supplier Device Package: 44-QFN (5x5) Part Status: Obsolete Number of I/O: 28 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TT21402-44LQI33 | Infineon Technologies |
Description: IC MCU 32BIT 44QFN Packaging: Tray Package / Case: 44-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 500kHz Core Processor: ARM® Cortex® Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I²C, SPI Supplier Device Package: 44-QFN (5x5) Part Status: Obsolete Number of I/O: 33 DigiKey Programmable: Not Verified |
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В кошику од. на суму грн. | |||||||||||||||||||
| TT21402-44LQI35 | Infineon Technologies |
Description: IC MCU 32BIT 44QFN Core Size: 32-Bit Single-Core Core Processor: ARM® Cortex® Speed: 500kHz Mounting Type: Surface Mount Package / Case: 44-UFQFN Exposed Pad Packaging: Tray DigiKey Programmable: Not Verified Number of I/O: 35 Part Status: Obsolete Supplier Device Package: 44-QFN (5x5) Connectivity: I²C, SPI Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V |
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| S6J329CLSMSC2000A | Infineon Technologies |
Description: IC MCU 32B 2.112MB FLSH 216TEQFPPeripherals: DMA, I2S, LVD, POR, PWM, WDT Connectivity: CANbus, CSIO, Ethernet, I2C, LINbus, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 1.15V ~ 5.5V Core Size: 32-Bit Single-Core Data Converters: A/D 50x12b Core Processor: Arm® Cortex®-R5F Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 512K x 8 Program Memory Size: 2.112MB (2.112M x 8) Speed: 240MHz Mounting Type: Surface Mount Package / Case: 216-LQFP Packaging: Tray DigiKey Programmable: Not Verified Number of I/O: 120 Supplier Device Package: 216-TEQFP (24x24) |
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IPN50R950CEATMA1 | Infineon Technologies |
Description: MOSFET N-CH 500V 6.6A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 100µA Supplier Device Package: PG-SOT223 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 13V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V |
на замовлення 619 шт: термін постачання 21-31 дні (днів) |
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IPN50R800CEATMA1 | Infineon Technologies |
Description: MOSFET N-CH 500V 7.6A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 1.5A, 13V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 130µA Supplier Device Package: PG-SOT223 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 13V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V |
на замовлення 2137 шт: термін постачання 21-31 дні (днів) |
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IPT65R195G7XTMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 14A 8HSOFPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 195mOhm @ 4.8A, 10V Power Dissipation (Max): 97W (Tc) Vgs(th) (Max) @ Id: 4V @ 240µA Supplier Device Package: PG-HSOF-8-2 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V |
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BGS14PN10E6327XTSA1 | Infineon Technologies |
Description: IC RF SWITCH SP4T 6GHZ TSNP10-1Packaging: Cut Tape (CT) Package / Case: 10-XFQFN Impedance: 50Ohm Mounting Type: Surface Mount Circuit: SP4T Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V ~ 3.6V Insertion Loss: 1.2dB Frequency Range: 500MHz ~ 6GHz Test Frequency: 6GHz Isolation: 18dB Supplier Device Package: PG-TSNP-10-1 IIP3: 73dBm Part Status: Active |
на замовлення 13353 шт: термін постачання 21-31 дні (днів) |
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TLS850D0TEV50ATMA1 | Infineon Technologies |
Description: IC REG LIN 5V 500MA PG-TO252-5Current - Supply (Max): 82 µA Protection Features: Over Current, Over Temperature Voltage Dropout (Max): 0.425V @ 250mA PSRR: 59dB (100Hz) Part Status: Active Control Features: Enable Voltage - Output (Min/Fixed): 5V Supplier Device Package: PG-TO252-5 Number of Regulators: 1 Voltage - Input (Max): 40V Current - Quiescent (Iq): 52 µA Output Configuration: Positive Operating Temperature: -40°C ~ 150°C (TJ) Qualification: AEC-Q100 Grade: Automotive Current - Output: 500mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Packaging: Cut Tape (CT) |
на замовлення 3225 шт: термін постачання 21-31 дні (днів) |
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BFP196WNH6327XTSA1 | Infineon Technologies |
Description: RF TRANS NPN 12V 7.5GHZ SOT343-4Part Status: Active Supplier Device Package: PG-SOT343-4 Noise Figure (dB Typ @ f): 1.3dB @ 900MHz Frequency - Transition: 7.5GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V Voltage - Collector Emitter Breakdown (Max): 12V Current - Collector (Ic) (Max): 150mA Power - Max: 700mW Gain: 9.7dB Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Packaging: Cut Tape (CT) |
на замовлення 6947 шт: термін постачання 21-31 дні (днів) |
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ICE3RBR4765JGXUMA1 | Infineon Technologies |
Description: IC OFFLINE SWITCH FLYBACK 12DSOOperating Temperature: -40°C ~ 130°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads Packaging: Cut Tape (CT) Power (Watts): 24 W Part Status: Active Voltage - Start Up: 18 V Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage Supplier Device Package: PG-DSO-12-19 Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V Topology: Flyback Output Isolation: Isolated Voltage - Breakdown: 650V Internal Switch(s): Yes Frequency - Switching: 65kHz Duty Cycle: 75% |
на замовлення 1317 шт: термін постачання 21-31 дні (днів) |
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TLE9251VSJXUMA1 | Infineon Technologies |
Description: IC TRANSCEIVER 1/1 PGDSO8Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 5.5V Number of Drivers/Receivers: 1/1 Protocol: CANbus Supplier Device Package: PG-DSO-8 Part Status: Not For New Designs Grade: Automotive Qualification: AEC-Q100 |
на замовлення 31617 шт: термін постачання 21-31 дні (днів) |
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TLS810A1LDV50XUMA1 | Infineon Technologies |
Description: IC REG LIN 5V 100MA PG-TSON-10Qualification: AEC-Q100 Current - Supply (Max): 50 µA Protection Features: Over Current, Over Temperature Voltage Dropout (Max): 0.55V @ 100mA PSRR: 55dB (100Hz) Grade: Automotive Voltage - Output (Min/Fixed): 5V Supplier Device Package: PG-TSON-10 Number of Regulators: 1 Voltage - Input (Max): 42V Current - Quiescent (Iq): 7.5 µA Output Configuration: Positive Operating Temperature: -40°C ~ 150°C (TJ) Current - Output: 100mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 10-TFDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 14367 шт: термін постачання 21-31 дні (днів) |
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IPB60R099C7ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 22A TO263-3FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1819 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO263-3-2 Vgs(th) (Max) @ Id: 4V @ 490µA Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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ESD129B1W01005E6327XTSA1 | Infineon Technologies |
Description: TVS DIODE 18VWM 28VC SGWLL22Packaging: Cut Tape (CT) Part Status: Active Power Line Protection: No Voltage - Clamping (Max) @ Ipp: 28V Bidirectional Channels: 1 Supplier Device Package: SG-WLL-2-2 Voltage - Reverse Standoff (Typ): 18V Capacitance @ Frequency: 0.3pF @ 1MHz Applications: General Purpose Type: Zener Mounting Type: Surface Mount Package / Case: 01005 (0402 Metric) |
на замовлення 29251 шт: термін постачання 21-31 дні (днів) |
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ESD249B1W0201E6327XTSA1 | Infineon Technologies |
Description: TVS DIODE 18VWM 23VC WLL-2-3Packaging: Cut Tape (CT) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C Applications: General Purpose Capacitance @ Frequency: 4.2pF @ 1GHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 18V Supplier Device Package: WLL-2-3 Bidirectional Channels: 1 Voltage - Clamping (Max) @ Ipp: 23V Power - Peak Pulse: 72W Power Line Protection: No Part Status: Active |
на замовлення 9994 шт: термін постачання 21-31 дні (днів) |
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IPB60R040C7ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 50A TO263-3Packaging: Cut Tape (CT) Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.24mA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V |
на замовлення 966 шт: термін постачання 21-31 дні (днів) |
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IPB60R060C7ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 35A TO263-3Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V Power Dissipation (Max): 162W (Tc) Vgs(th) (Max) @ Id: 4V @ 800µA Supplier Device Package: D2PAK (TO-263) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 400 V |
на замовлення 264 шт: термін постачання 21-31 дні (днів) |
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IR38365MTRPBFAUMA1 | Infineon Technologies |
Description: IC REG BUCK ADJ 30A 34PQFNPackaging: Cut Tape (CT) Package / Case: 34-PowerVFQFN Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 30A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 150kHz ~ 1.5MHz Voltage - Input (Max): 16V Topology: Buck Supplier Device Package: 34-PQFN (5x7) Synchronous Rectifier: No Voltage - Output (Max): 14V Voltage - Input (Min): 1.5V Voltage - Output (Min/Fixed): 0.5V Part Status: Active |
на замовлення 2619 шт: термін постачання 21-31 дні (днів) |
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TLS810B1EJV50XUMA1 | Infineon Technologies |
Description: IC REG LINEAR 5V 100MA 8DSOCurrent - Supply (Max): 11 µA Protection Features: Over Current, Over Temperature Voltage Dropout (Max): 0.55V @ 100mA PSRR: 55dB (100Hz) Part Status: Active Control Features: Enable Voltage - Output (Min/Fixed): 5V Supplier Device Package: PG-DSO-8 Number of Regulators: 1 Voltage - Input (Max): 42V Current - Quiescent (Iq): 1 µA Output Configuration: Positive Operating Temperature: -40°C ~ 150°C (TJ) Current - Output: 100mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Packaging: Cut Tape (CT) Qualification: AEC-Q100 Grade: Automotive |
на замовлення 1810 шт: термін постачання 21-31 дні (днів) |
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IPB60R180C7ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 13A TO263-3Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO263-3 Vgs(th) (Max) @ Id: 4V @ 260µA Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 5.3A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IR38265MTRPBFAUMA1 | Infineon Technologies |
Description: IC REG BUCK ADJ 30A 34PQFNPart Status: Active Voltage - Output (Min/Fixed): 0.5V Voltage - Input (Min): 1.5V Voltage - Output (Max): 14V Synchronous Rectifier: Yes Supplier Device Package: 34-PQFN (5x7) Topology: Buck Voltage - Input (Max): 16V Frequency - Switching: 150kHz ~ 1.5MHz Output Configuration: Positive Operating Temperature: -40°C ~ 125°C (TJ) Current - Output: 30A Function: Step-Down Number of Outputs: 1 Mounting Type: Surface Mount Output Type: Adjustable Package / Case: 34-PowerVFQFN Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TLS810B1LDV33XUMA1 | Infineon Technologies |
Description: IC REG LINEAR 3.3V 100MA TSON-10Qualification: AEC-Q100 Current - Supply (Max): 15 µA Protection Features: Over Current, Over Temperature Voltage Dropout (Max): 0.65V @ 100mA PSRR: 60dB (100Hz) Grade: Automotive Control Features: Enable Voltage - Output (Min/Fixed): 3.3V Supplier Device Package: PG-TSON-10 Number of Regulators: 1 Voltage - Input (Max): 42V Current - Quiescent (Iq): 10 µA Output Configuration: Positive Operating Temperature: -40°C ~ 150°C (TJ) Current - Output: 100mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 10-TFDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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IPT60R050G7XTMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 44A 8HSOFPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 15.9A, 10V Power Dissipation (Max): 245W (Tc) Vgs(th) (Max) @ Id: 4V @ 800µA Supplier Device Package: PG-HSOF-8-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 400 V |
на замовлення 4516 шт: термін постачання 21-31 дні (днів) |
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BGA8U1BN6E6327XTSA1 | Infineon Technologies |
Description: IC RF AMP 5.15GHZ-5.85GHZ TSNP6Supplier Device Package: PG-TSNP-6-2 Test Frequency: 5.15GHz ~ 5.85GHz P1dB: -5dBm Noise Figure: 1.6dB ~ 5dB Current - Supply: 4mA Voltage - Supply: 1.6V ~ 3.1V Frequency: 5.15GHz ~ 5.85GHz Mounting Type: Surface Mount Package / Case: 6-XFDFN Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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ESD246B1W01005E6327XTSA1 | Infineon Technologies |
Description: TVS DIODE 5.5VWM 7.5V SGWLL22Packaging: Cut Tape (CT) Package / Case: 01005 (0402 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C Applications: General Purpose Capacitance @ Frequency: 5.5pF @ 1GHz Current - Peak Pulse (10/1000µs): 5.5A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V Supplier Device Package: SG-WLL-2-2 Bidirectional Channels: 1 Voltage - Clamping (Max) @ Ipp: 7.5V Power - Peak Pulse: 44W Power Line Protection: No |
на замовлення 43198 шт: термін постачання 21-31 дні (днів) |
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IPB60R120C7ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 19A TO263-3Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 10V Power Dissipation (Max): 92W (Tc) Vgs(th) (Max) @ Id: 4V @ 390µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IPC90N04S53R6ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 90A 8TDSON-34Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 45A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 23µA Supplier Device Package: PG-TDSON-8-34 Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5200 шт: термін постачання 21-31 дні (днів) |
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IR38363MTRPBFAUMA1 | Infineon Technologies |
Description: IC REG BUCK ADJ 15A 34PQFNPackaging: Cut Tape (CT) Package / Case: 34-PowerVFQFN Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 15A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 150kHz ~ 1.5MHz Voltage - Input (Max): 16V Topology: Buck Supplier Device Package: 34-PQFN (5x7) Synchronous Rectifier: Yes Voltage - Output (Max): 14V Voltage - Input (Min): 1.5V Voltage - Output (Min/Fixed): 0.5V |
на замовлення 4035 шт: термін постачання 21-31 дні (днів) |
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BGC100GN6E6327XTSA1 | Infineon Technologies |
Description: RF DIR COUPLER 600MHZ~2.7GHZPackaging: Cut Tape (CT) Package / Case: 6-XFDFN Mounting Type: Surface Mount Frequency: 600MHz ~ 2.7GHz RF Type: Cellular, CDMA, GSM, HSPA+, LTE, TD-SCDMA, W-CDMA Insertion Loss: 0.3dB Applications: Cellular, GSM Coupler Type: Coupler, With Filter Return Loss: 21dB Supplier Device Package: PG-TSNP-6-2 |
на замовлення 12217 шт: термін постачання 21-31 дні (днів) |
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CDM10VD4XTSA1 | Infineon Technologies |
Description: IC DIMMER FLEXIBLE SOT23-6Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C Voltage - Supply: 11V ~ 25V Applications: Dimming Controller Supplier Device Package: PG-SOT23-6 Part Status: Active |
на замовлення 2994 шт: термін постачання 21-31 дні (днів) |
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IPC90N04S5L3R3ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 90A 8TDSON-34Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 45A, 10V Power Dissipation (Max): 62W (Tc) Vgs(th) (Max) @ Id: 2V @ 23µA Supplier Device Package: PG-TDSON-8-34 Grade: Automotive Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2145 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 11344 шт: термін постачання 21-31 дні (днів) |
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IPT60R028G7XTMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 75A 8HSOFPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 28.8A, 10V Power Dissipation (Max): 391W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.44mA Supplier Device Package: PG-HSOF-8-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TLE49655MXTSA1 | Infineon Technologies |
Description: MAGNETIC SWITCH HALL EFF SOT23-3Features: Temperature Compensated Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Output Type: Open Drain Polarization: South Pole Mounting Type: Surface Mount Function: Unipolar Switch Operating Temperature: -40°C ~ 170°C Voltage - Supply: 3V ~ 5.5V Technology: Hall Effect Sensing Range: 10.4mT Trip, 2.8mT Release Current - Output (Max): 5mA Current - Supply (Max): 2.5mA Supplier Device Package: PG-SOT23-3-15 Test Condition: 25°C Part Status: Active |
на замовлення 1908 шт: термін постачання 21-31 дні (днів) |
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1EDC05I12AHXUMA1 | Infineon Technologies |
Description: DGT ISO 2.5KV 1CH GT DVR DSO8-59Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: Magnetic Coupling Voltage - Isolation: 2500Vrms Supplier Device Package: PG-DSO-8-59 Rise / Fall Time (Typ): 10ns, 9ns Part Status: Active Number of Channels: 1 Voltage - Output Supply: 3.1V ~ 17V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1EDC10I12MHXUMA1 | Infineon Technologies |
Description: DGT ISO 2.5KV 1CH GT DVR DSO8-59Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: Magnetic Coupling Voltage - Isolation: 2500Vrms Supplier Device Package: PG-DSO-8-59 Rise / Fall Time (Typ): 10ns, 9ns Part Status: Active Number of Channels: 1 Voltage - Output Supply: 3.1V ~ 17V |
на замовлення 713 шт: термін постачання 21-31 дні (днів) |
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1EDC20H12AHXUMA1 | Infineon Technologies |
Description: DGT ISO 2.5KV 1CH GT DVR DSO8-59Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: Magnetic Coupling Voltage - Isolation: 2500Vrms Supplier Device Package: PG-DSO-8-59 Rise / Fall Time (Typ): 10ns, 9ns Part Status: Active Number of Channels: 1 Voltage - Output Supply: 3.1V ~ 17V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BGA123L4E6327XTSA1 | Infineon Technologies |
Description: IC AMP BEIDOU GALI 1.55-1.615GHZPackaging: Cut Tape (CT) Package / Case: 4-XFDFN Mounting Type: Surface Mount Frequency: 1.55GHz ~ 1.615GHz RF Type: Beidou, Galileo, GLONASS, GPS Voltage - Supply: 1.1V ~ 3.6V Gain: 18.4dB Current - Supply: 1.1mA Noise Figure: 0.75dB Test Frequency: 1.55GHz ~ 1.615GHz Part Status: Active |
на замовлення 24138 шт: термін постачання 21-31 дні (днів) |
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BGA8V1BN6E6327XTSA1 | Infineon Technologies |
Description: IC RF AMP 3.4GHZ-3.8GHZ TSNP6Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Mounting Type: Surface Mount Frequency: 3.4GHz ~ 3.8GHz Voltage - Supply: 1.6V ~ 3.1V Current - Supply: 4.2mA Noise Figure: 1.2dB ~ 5.3dB P1dB: -3dBm Test Frequency: 3.4GHz ~ 3.8GHz Supplier Device Package: PG-TSNP-6-2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BSC010N04LSTATMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 39A/100A TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8 FL Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9520 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BSC011N03LSTATMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 39A/100A TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V Power Dissipation (Max): 3W (Ta), 115W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8 FL Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 15 V |
на замовлення 4598 шт: термін постачання 21-31 дні (днів) |
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BSC014N04LSTATMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 33A/100A TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 115W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8 FL Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6020 pF @ 20 V |
на замовлення 7804 шт: термін постачання 21-31 дні (днів) |
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BSC014N06NSTATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 100A TDSON-8 FLPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.45mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 188W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 120µA Supplier Device Package: PG-TDSON-8 FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8125 pF @ 30 V |
на замовлення 4361 шт: термін постачання 21-31 дні (днів) |
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BSC016N06NSTATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 31A/100A TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 95µA Supplier Device Package: PG-TDSON-8 FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 30 V |
на замовлення 13915 шт: термін постачання 21-31 дні (днів) |
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BSC019N06NSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 100A TDSON-8 FLPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 1.95mOhm @ 50A, 10V Power Dissipation (Max): 136W (Ta) Vgs(th) (Max) @ Id: 3.3V @ 74µA Supplier Device Package: PG-TDSON-8 FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 30 V |
на замовлення 16587 шт: термін постачання 21-31 дні (днів) |
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BSC028N06NSTATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 24A/100A TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 50µA Supplier Device Package: PG-TDSON-8-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3375 pF @ 30 V |
на замовлення 12320 шт: термін постачання 21-31 дні (днів) |
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BSC097N06NSTATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 13A/48A TDSONInput Capacitance (Ciss) (Max) @ Vds: 1075 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Not For New Designs Supplier Device Package: PG-TDSON-8-1 Vgs(th) (Max) @ Id: 3.3V @ 14µA Power Dissipation (Max): 3W (Ta), 43W (Tc) Rds On (Max) @ Id, Vgs: 9.7mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 48A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
| CYTT21402-48LQI36 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 48QFN
Packaging: Tray
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I²C, SPI
Voltage - Supply: 1.71V ~ 5.5V
Resolution (Bits): 32 b
Supplier Device Package: 48-QFN (6x6)
Touchscreen: 2 Wire Capacitive
Description: IC MCU 32BIT 48QFN
Packaging: Tray
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I²C, SPI
Voltage - Supply: 1.71V ~ 5.5V
Resolution (Bits): 32 b
Supplier Device Package: 48-QFN (6x6)
Touchscreen: 2 Wire Capacitive
товару немає в наявності
В кошику
од. на суму грн.
| S29PL032J55BAI120 |
Виробник: Infineon Technologies
Description: IC FLASH 32MBIT PARALLEL 48FBGA
Description: IC FLASH 32MBIT PARALLEL 48FBGA
товару немає в наявності
В кошику
од. на суму грн.
| CYTT21401-44LQI28T |
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Виробник: Infineon Technologies
Description: IC TSC 2 WIRE CAP 44-QFN
Packaging: Tape & Reel (TR)
Package / Case: 44-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
Voltage - Supply: 1.71V ~ 5.5V
Resolution (Bits): 32 b
Supplier Device Package: 44-QFN (5x5)
Touchscreen: 2 Wire Capacitive
Part Status: Obsolete
Description: IC TSC 2 WIRE CAP 44-QFN
Packaging: Tape & Reel (TR)
Package / Case: 44-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
Voltage - Supply: 1.71V ~ 5.5V
Resolution (Bits): 32 b
Supplier Device Package: 44-QFN (5x5)
Touchscreen: 2 Wire Capacitive
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| CYTT21402-48LQI36T |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I²C, SPI
Voltage - Supply: 1.71V ~ 5.5V
Resolution (Bits): 32 b
Supplier Device Package: 48-QFN (6x6)
Touchscreen: 2 Wire Capacitive
Part Status: Obsolete
Description: IC MCU 32BIT 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I²C, SPI
Voltage - Supply: 1.71V ~ 5.5V
Resolution (Bits): 32 b
Supplier Device Package: 48-QFN (6x6)
Touchscreen: 2 Wire Capacitive
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| CYTT21403-56LQI44 |
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Виробник: Infineon Technologies
Description: IC TSC 2 WIRE CAP 56-QFN
Packaging: Tray
Package / Case: 56-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
Voltage - Supply: 1.71V ~ 5.5V
Resolution (Bits): 32 b
Supplier Device Package: 56-QFN (6x6)
Touchscreen: 2 Wire Capacitive
Part Status: Obsolete
Description: IC TSC 2 WIRE CAP 56-QFN
Packaging: Tray
Package / Case: 56-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
Voltage - Supply: 1.71V ~ 5.5V
Resolution (Bits): 32 b
Supplier Device Package: 56-QFN (6x6)
Touchscreen: 2 Wire Capacitive
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| CYTT21403-56LQI44T |
![]() |
Виробник: Infineon Technologies
Description: IC TSC 2 WIRE CAP 56-QFN
Packaging: Tape & Reel (TR)
Package / Case: 56-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
Voltage - Supply: 1.71V ~ 5.5V
Resolution (Bits): 32 b
Supplier Device Package: 56-QFN (6x6)
Touchscreen: 2 Wire Capacitive
Part Status: Obsolete
Description: IC TSC 2 WIRE CAP 56-QFN
Packaging: Tape & Reel (TR)
Package / Case: 56-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
Voltage - Supply: 1.71V ~ 5.5V
Resolution (Bits): 32 b
Supplier Device Package: 56-QFN (6x6)
Touchscreen: 2 Wire Capacitive
Part Status: Obsolete
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| TT21401-44LQI28 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 44QFN
Packaging: Tray
Package / Case: 44-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 500kHz
Core Processor: ARM® Cortex®
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, SPI
Supplier Device Package: 44-QFN (5x5)
Part Status: Obsolete
Number of I/O: 28
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 44QFN
Packaging: Tray
Package / Case: 44-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 500kHz
Core Processor: ARM® Cortex®
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, SPI
Supplier Device Package: 44-QFN (5x5)
Part Status: Obsolete
Number of I/O: 28
DigiKey Programmable: Not Verified
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| TT21401-44LQI33 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 44QFN
Packaging: Tray
Package / Case: 44-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 500kHz
Core Processor: ARM® Cortex®
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, SPI
Supplier Device Package: 44-QFN (5x5)
Part Status: Obsolete
Number of I/O: 33
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 44QFN
Packaging: Tray
Package / Case: 44-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 500kHz
Core Processor: ARM® Cortex®
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, SPI
Supplier Device Package: 44-QFN (5x5)
Part Status: Obsolete
Number of I/O: 33
DigiKey Programmable: Not Verified
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| TT21401-44LQI35 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 44QFN
Packaging: Tray
Package / Case: 44-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 500kHz
Core Processor: ARM® Cortex®
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, SPI
Supplier Device Package: 44-QFN (5x5)
Part Status: Obsolete
Number of I/O: 35
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 44QFN
Packaging: Tray
Package / Case: 44-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 500kHz
Core Processor: ARM® Cortex®
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, SPI
Supplier Device Package: 44-QFN (5x5)
Part Status: Obsolete
Number of I/O: 35
DigiKey Programmable: Not Verified
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| TT21401-48LQI36 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 48QFN
Packaging: Tray
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 500kHz
Core Processor: ARM® Cortex®
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, SPI
Supplier Device Package: 48-QFN (6x6)
Part Status: Obsolete
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 48QFN
Packaging: Tray
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 500kHz
Core Processor: ARM® Cortex®
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, SPI
Supplier Device Package: 48-QFN (6x6)
Part Status: Obsolete
Number of I/O: 36
DigiKey Programmable: Not Verified
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| TT21401-56LQI40 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 56QFN
Packaging: Tray
Package / Case: 56-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 500kHz
Core Processor: ARM® Cortex®
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, SPI
Supplier Device Package: 56-QFN (6x6)
Part Status: Obsolete
Number of I/O: 40
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 56QFN
Packaging: Tray
Package / Case: 56-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 500kHz
Core Processor: ARM® Cortex®
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, SPI
Supplier Device Package: 56-QFN (6x6)
Part Status: Obsolete
Number of I/O: 40
DigiKey Programmable: Not Verified
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| TT21401-56LQI44 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 56QFN
Packaging: Tray
Package / Case: 56-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 500kHz
Core Processor: ARM® Cortex®
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, SPI
Supplier Device Package: 56-QFN (6x6)
Part Status: Obsolete
Number of I/O: 44
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 56QFN
Packaging: Tray
Package / Case: 56-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 500kHz
Core Processor: ARM® Cortex®
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, SPI
Supplier Device Package: 56-QFN (6x6)
Part Status: Obsolete
Number of I/O: 44
DigiKey Programmable: Not Verified
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| TT21401-56LQI48 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 56QFN
Packaging: Tray
Package / Case: 56-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 500kHz
Core Processor: ARM® Cortex®
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, SPI
Supplier Device Package: 56-QFN (6x6)
Part Status: Obsolete
Number of I/O: 48
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 56QFN
Packaging: Tray
Package / Case: 56-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 500kHz
Core Processor: ARM® Cortex®
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, SPI
Supplier Device Package: 56-QFN (6x6)
Part Status: Obsolete
Number of I/O: 48
DigiKey Programmable: Not Verified
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| TT21402-44LQI28 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 44QFN
Packaging: Tray
Package / Case: 44-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 500kHz
Core Processor: ARM® Cortex®
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, SPI
Supplier Device Package: 44-QFN (5x5)
Part Status: Obsolete
Number of I/O: 28
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 44QFN
Packaging: Tray
Package / Case: 44-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 500kHz
Core Processor: ARM® Cortex®
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, SPI
Supplier Device Package: 44-QFN (5x5)
Part Status: Obsolete
Number of I/O: 28
DigiKey Programmable: Not Verified
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| TT21402-44LQI33 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 44QFN
Packaging: Tray
Package / Case: 44-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 500kHz
Core Processor: ARM® Cortex®
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, SPI
Supplier Device Package: 44-QFN (5x5)
Part Status: Obsolete
Number of I/O: 33
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 44QFN
Packaging: Tray
Package / Case: 44-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 500kHz
Core Processor: ARM® Cortex®
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, SPI
Supplier Device Package: 44-QFN (5x5)
Part Status: Obsolete
Number of I/O: 33
DigiKey Programmable: Not Verified
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| TT21402-44LQI35 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 44QFN
Core Size: 32-Bit Single-Core
Core Processor: ARM® Cortex®
Speed: 500kHz
Mounting Type: Surface Mount
Package / Case: 44-UFQFN Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 35
Part Status: Obsolete
Supplier Device Package: 44-QFN (5x5)
Connectivity: I²C, SPI
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Description: IC MCU 32BIT 44QFN
Core Size: 32-Bit Single-Core
Core Processor: ARM® Cortex®
Speed: 500kHz
Mounting Type: Surface Mount
Package / Case: 44-UFQFN Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 35
Part Status: Obsolete
Supplier Device Package: 44-QFN (5x5)
Connectivity: I²C, SPI
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
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| S6J329CLSMSC2000A |
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Виробник: Infineon Technologies
Description: IC MCU 32B 2.112MB FLSH 216TEQFP
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, Ethernet, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.15V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 50x12b
Core Processor: Arm® Cortex®-R5F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 512K x 8
Program Memory Size: 2.112MB (2.112M x 8)
Speed: 240MHz
Mounting Type: Surface Mount
Package / Case: 216-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 120
Supplier Device Package: 216-TEQFP (24x24)
Description: IC MCU 32B 2.112MB FLSH 216TEQFP
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, Ethernet, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.15V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 50x12b
Core Processor: Arm® Cortex®-R5F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 512K x 8
Program Memory Size: 2.112MB (2.112M x 8)
Speed: 240MHz
Mounting Type: Surface Mount
Package / Case: 216-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 120
Supplier Device Package: 216-TEQFP (24x24)
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| IPN50R950CEATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 6.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-SOT223
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
Description: MOSFET N-CH 500V 6.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-SOT223
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
на замовлення 619 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 43.39 грн |
| 10+ | 35.30 грн |
| 100+ | 24.55 грн |
| 500+ | 17.99 грн |
| IPN50R800CEATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 7.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1.5A, 13V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-SOT223
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
Description: MOSFET N-CH 500V 7.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1.5A, 13V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-SOT223
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
на замовлення 2137 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 64.32 грн |
| 10+ | 38.65 грн |
| 100+ | 25.22 грн |
| 500+ | 18.23 грн |
| 1000+ | 16.48 грн |
| IPT65R195G7XTMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 14A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 4.8A, 10V
Power Dissipation (Max): 97W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
Description: MOSFET N-CH 650V 14A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 4.8A, 10V
Power Dissipation (Max): 97W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
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| BGS14PN10E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC RF SWITCH SP4T 6GHZ TSNP10-1
Packaging: Cut Tape (CT)
Package / Case: 10-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP4T
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Insertion Loss: 1.2dB
Frequency Range: 500MHz ~ 6GHz
Test Frequency: 6GHz
Isolation: 18dB
Supplier Device Package: PG-TSNP-10-1
IIP3: 73dBm
Part Status: Active
Description: IC RF SWITCH SP4T 6GHZ TSNP10-1
Packaging: Cut Tape (CT)
Package / Case: 10-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP4T
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Insertion Loss: 1.2dB
Frequency Range: 500MHz ~ 6GHz
Test Frequency: 6GHz
Isolation: 18dB
Supplier Device Package: PG-TSNP-10-1
IIP3: 73dBm
Part Status: Active
на замовлення 13353 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 48.04 грн |
| 10+ | 32.76 грн |
| 25+ | 29.49 грн |
| 100+ | 24.21 грн |
| 250+ | 22.56 грн |
| 500+ | 21.57 грн |
| 1000+ | 20.50 грн |
| TLS850D0TEV50ATMA1 |
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Виробник: Infineon Technologies
Description: IC REG LIN 5V 500MA PG-TO252-5
Current - Supply (Max): 82 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.425V @ 250mA
PSRR: 59dB (100Hz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TO252-5
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 52 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Qualification: AEC-Q100
Grade: Automotive
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Packaging: Cut Tape (CT)
Description: IC REG LIN 5V 500MA PG-TO252-5
Current - Supply (Max): 82 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.425V @ 250mA
PSRR: 59dB (100Hz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TO252-5
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 52 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Qualification: AEC-Q100
Grade: Automotive
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Packaging: Cut Tape (CT)
на замовлення 3225 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 143.36 грн |
| 10+ | 102.45 грн |
| 25+ | 93.46 грн |
| 100+ | 78.40 грн |
| 250+ | 73.96 грн |
| 500+ | 71.29 грн |
| 1000+ | 67.95 грн |
| BFP196WNH6327XTSA1 |
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Виробник: Infineon Technologies
Description: RF TRANS NPN 12V 7.5GHZ SOT343-4
Part Status: Active
Supplier Device Package: PG-SOT343-4
Noise Figure (dB Typ @ f): 1.3dB @ 900MHz
Frequency - Transition: 7.5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 150mA
Power - Max: 700mW
Gain: 9.7dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Packaging: Cut Tape (CT)
Description: RF TRANS NPN 12V 7.5GHZ SOT343-4
Part Status: Active
Supplier Device Package: PG-SOT343-4
Noise Figure (dB Typ @ f): 1.3dB @ 900MHz
Frequency - Transition: 7.5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 150mA
Power - Max: 700mW
Gain: 9.7dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Packaging: Cut Tape (CT)
на замовлення 6947 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 41.07 грн |
| 13+ | 24.33 грн |
| 100+ | 15.54 грн |
| 500+ | 11.02 грн |
| 1000+ | 9.87 грн |
| ICE3RBR4765JGXUMA1 |
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Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Operating Temperature: -40°C ~ 130°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Packaging: Cut Tape (CT)
Power (Watts): 24 W
Part Status: Active
Voltage - Start Up: 18 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-12-19
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 65kHz
Duty Cycle: 75%
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Operating Temperature: -40°C ~ 130°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Packaging: Cut Tape (CT)
Power (Watts): 24 W
Part Status: Active
Voltage - Start Up: 18 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-12-19
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 65kHz
Duty Cycle: 75%
на замовлення 1317 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 111.59 грн |
| 10+ | 78.43 грн |
| 25+ | 71.22 грн |
| 100+ | 59.40 грн |
| 250+ | 55.85 грн |
| 500+ | 53.72 грн |
| 1000+ | 52.45 грн |
| TLE9251VSJXUMA1 |
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Виробник: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGDSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Protocol: CANbus
Supplier Device Package: PG-DSO-8
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q100
Description: IC TRANSCEIVER 1/1 PGDSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Protocol: CANbus
Supplier Device Package: PG-DSO-8
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q100
на замовлення 31617 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 115.46 грн |
| 10+ | 81.34 грн |
| 25+ | 73.99 грн |
| 100+ | 61.77 грн |
| 250+ | 58.12 грн |
| 500+ | 55.91 грн |
| 1000+ | 54.71 грн |
| TLS810A1LDV50XUMA1 |
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Виробник: Infineon Technologies
Description: IC REG LIN 5V 100MA PG-TSON-10
Qualification: AEC-Q100
Current - Supply (Max): 50 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.55V @ 100mA
PSRR: 55dB (100Hz)
Grade: Automotive
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TSON-10
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 7.5 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 100mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 10-TFDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC REG LIN 5V 100MA PG-TSON-10
Qualification: AEC-Q100
Current - Supply (Max): 50 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.55V @ 100mA
PSRR: 55dB (100Hz)
Grade: Automotive
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TSON-10
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 7.5 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 100mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 10-TFDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 14367 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 99.19 грн |
| 10+ | 69.62 грн |
| 25+ | 63.10 грн |
| 100+ | 52.50 грн |
| 250+ | 49.30 грн |
| 500+ | 47.37 грн |
| 1000+ | 45.03 грн |
| 2500+ | 43.38 грн |
| IPB60R099C7ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 22A TO263-3
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1819 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4V @ 490µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Description: MOSFET N-CH 600V 22A TO263-3
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1819 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4V @ 490µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 410.70 грн |
| 10+ | 264.53 грн |
| 100+ | 190.40 грн |
| 500+ | 149.01 грн |
| ESD129B1W01005E6327XTSA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 18VWM 28VC SGWLL22
Packaging: Cut Tape (CT)
Part Status: Active
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 28V
Bidirectional Channels: 1
Supplier Device Package: SG-WLL-2-2
Voltage - Reverse Standoff (Typ): 18V
Capacitance @ Frequency: 0.3pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: 01005 (0402 Metric)
Description: TVS DIODE 18VWM 28VC SGWLL22
Packaging: Cut Tape (CT)
Part Status: Active
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 28V
Bidirectional Channels: 1
Supplier Device Package: SG-WLL-2-2
Voltage - Reverse Standoff (Typ): 18V
Capacitance @ Frequency: 0.3pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: 01005 (0402 Metric)
на замовлення 29251 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 34+ | 9.30 грн |
| 46+ | 6.49 грн |
| 128+ | 2.34 грн |
| 500+ | 2.10 грн |
| 1000+ | 2.00 грн |
| 2000+ | 1.97 грн |
| 5000+ | 1.91 грн |
| ESD249B1W0201E6327XTSA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 18VWM 23VC WLL-2-3
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Capacitance @ Frequency: 4.2pF @ 1GHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 23V
Power - Peak Pulse: 72W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 18VWM 23VC WLL-2-3
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Capacitance @ Frequency: 4.2pF @ 1GHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 23V
Power - Peak Pulse: 72W
Power Line Protection: No
Part Status: Active
на замовлення 9994 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 13.95 грн |
| 34+ | 8.95 грн |
| 100+ | 3.87 грн |
| 500+ | 2.90 грн |
| 1000+ | 2.17 грн |
| 2000+ | 2.10 грн |
| 5000+ | 1.85 грн |
| IPB60R040C7ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 50A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.24mA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
Description: MOSFET N-CH 600V 50A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.24mA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
на замовлення 966 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 719.11 грн |
| 10+ | 491.75 грн |
| 100+ | 368.30 грн |
| 500+ | 319.33 грн |
| IPB60R060C7ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 35A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Power Dissipation (Max): 162W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: D2PAK (TO-263)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 400 V
Description: MOSFET N-CH 600V 35A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Power Dissipation (Max): 162W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: D2PAK (TO-263)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 400 V
на замовлення 264 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 505.24 грн |
| 10+ | 331.91 грн |
| 100+ | 242.83 грн |
| IR38365MTRPBFAUMA1 |
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Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 30A 34PQFN
Packaging: Cut Tape (CT)
Package / Case: 34-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 30A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 150kHz ~ 1.5MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: 34-PQFN (5x7)
Synchronous Rectifier: No
Voltage - Output (Max): 14V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.5V
Part Status: Active
Description: IC REG BUCK ADJ 30A 34PQFN
Packaging: Cut Tape (CT)
Package / Case: 34-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 30A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 150kHz ~ 1.5MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: 34-PQFN (5x7)
Synchronous Rectifier: No
Voltage - Output (Max): 14V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.5V
Part Status: Active
на замовлення 2619 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 366.53 грн |
| 10+ | 268.56 грн |
| 25+ | 247.41 грн |
| 100+ | 210.35 грн |
| 250+ | 199.94 грн |
| 500+ | 193.67 грн |
| 1000+ | 185.41 грн |
| TLS810B1EJV50XUMA1 |
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Виробник: Infineon Technologies
Description: IC REG LINEAR 5V 100MA 8DSO
Current - Supply (Max): 11 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.55V @ 100mA
PSRR: 55dB (100Hz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-DSO-8
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 1 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 100mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Description: IC REG LINEAR 5V 100MA 8DSO
Current - Supply (Max): 11 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.55V @ 100mA
PSRR: 55dB (100Hz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-DSO-8
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 1 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 100mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
на замовлення 1810 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 93.76 грн |
| 10+ | 65.82 грн |
| 25+ | 59.70 грн |
| 100+ | 49.68 грн |
| 250+ | 46.66 грн |
| 500+ | 44.84 грн |
| 1000+ | 42.62 грн |
| IPB60R180C7ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 13A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 260µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 5.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 600V 13A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 260µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 5.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| IR38265MTRPBFAUMA1 |
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Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 30A 34PQFN
Part Status: Active
Voltage - Output (Min/Fixed): 0.5V
Voltage - Input (Min): 1.5V
Voltage - Output (Max): 14V
Synchronous Rectifier: Yes
Supplier Device Package: 34-PQFN (5x7)
Topology: Buck
Voltage - Input (Max): 16V
Frequency - Switching: 150kHz ~ 1.5MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 30A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 34-PowerVFQFN
Packaging: Cut Tape (CT)
Description: IC REG BUCK ADJ 30A 34PQFN
Part Status: Active
Voltage - Output (Min/Fixed): 0.5V
Voltage - Input (Min): 1.5V
Voltage - Output (Max): 14V
Synchronous Rectifier: Yes
Supplier Device Package: 34-PQFN (5x7)
Topology: Buck
Voltage - Input (Max): 16V
Frequency - Switching: 150kHz ~ 1.5MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 30A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 34-PowerVFQFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| TLS810B1LDV33XUMA1 |
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Виробник: Infineon Technologies
Description: IC REG LINEAR 3.3V 100MA TSON-10
Qualification: AEC-Q100
Current - Supply (Max): 15 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.65V @ 100mA
PSRR: 60dB (100Hz)
Grade: Automotive
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: PG-TSON-10
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 10 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 100mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 10-TFDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC REG LINEAR 3.3V 100MA TSON-10
Qualification: AEC-Q100
Current - Supply (Max): 15 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.65V @ 100mA
PSRR: 60dB (100Hz)
Grade: Automotive
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: PG-TSON-10
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 10 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 100mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 10-TFDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 100.74 грн |
| 10+ | 70.44 грн |
| 25+ | 63.88 грн |
| 100+ | 53.15 грн |
| 250+ | 49.91 грн |
| 500+ | 47.96 грн |
| 1000+ | 45.59 грн |
| 2500+ | 43.92 грн |
| IPT60R050G7XTMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 44A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 15.9A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 400 V
Description: MOSFET N-CH 600V 44A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 15.9A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 400 V
на замовлення 4516 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 658.67 грн |
| 10+ | 434.96 грн |
| 100+ | 326.88 грн |
| BGA8U1BN6E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC RF AMP 5.15GHZ-5.85GHZ TSNP6
Supplier Device Package: PG-TSNP-6-2
Test Frequency: 5.15GHz ~ 5.85GHz
P1dB: -5dBm
Noise Figure: 1.6dB ~ 5dB
Current - Supply: 4mA
Voltage - Supply: 1.6V ~ 3.1V
Frequency: 5.15GHz ~ 5.85GHz
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Packaging: Cut Tape (CT)
Description: IC RF AMP 5.15GHZ-5.85GHZ TSNP6
Supplier Device Package: PG-TSNP-6-2
Test Frequency: 5.15GHz ~ 5.85GHz
P1dB: -5dBm
Noise Figure: 1.6dB ~ 5dB
Current - Supply: 4mA
Voltage - Supply: 1.6V ~ 3.1V
Frequency: 5.15GHz ~ 5.85GHz
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Packaging: Cut Tape (CT)
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В кошику
од. на суму грн.
| ESD246B1W01005E6327XTSA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 5.5VWM 7.5V SGWLL22
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Capacitance @ Frequency: 5.5pF @ 1GHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: SG-WLL-2-2
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 7.5V
Power - Peak Pulse: 44W
Power Line Protection: No
Description: TVS DIODE 5.5VWM 7.5V SGWLL22
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Capacitance @ Frequency: 5.5pF @ 1GHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: SG-WLL-2-2
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 7.5V
Power - Peak Pulse: 44W
Power Line Protection: No
на замовлення 43198 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 6.20 грн |
| 66+ | 4.55 грн |
| 164+ | 1.83 грн |
| 500+ | 1.66 грн |
| 1000+ | 1.60 грн |
| 2000+ | 1.57 грн |
| 5000+ | 1.51 грн |
| IPB60R120C7ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 19A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 390µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
Description: MOSFET N-CH 600V 19A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 390µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
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В кошику
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| IPC90N04S53R6ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 90A 8TDSON-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 45A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 23µA
Supplier Device Package: PG-TDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 90A 8TDSON-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 45A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 23µA
Supplier Device Package: PG-TDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5200 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 103.06 грн |
| 10+ | 62.83 грн |
| 100+ | 41.77 грн |
| 500+ | 30.70 грн |
| 1000+ | 27.97 грн |
| 2000+ | 25.67 грн |
| IR38363MTRPBFAUMA1 |
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Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 15A 34PQFN
Packaging: Cut Tape (CT)
Package / Case: 34-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 15A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 150kHz ~ 1.5MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: 34-PQFN (5x7)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.5V
Description: IC REG BUCK ADJ 15A 34PQFN
Packaging: Cut Tape (CT)
Package / Case: 34-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 15A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 150kHz ~ 1.5MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: 34-PQFN (5x7)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.5V
на замовлення 4035 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 385.90 грн |
| 10+ | 284.68 грн |
| 25+ | 262.93 грн |
| 100+ | 224.27 грн |
| 250+ | 213.56 грн |
| 500+ | 207.10 грн |
| 1000+ | 198.48 грн |
| BGC100GN6E6327XTSA1 |
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Виробник: Infineon Technologies
Description: RF DIR COUPLER 600MHZ~2.7GHZ
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 600MHz ~ 2.7GHz
RF Type: Cellular, CDMA, GSM, HSPA+, LTE, TD-SCDMA, W-CDMA
Insertion Loss: 0.3dB
Applications: Cellular, GSM
Coupler Type: Coupler, With Filter
Return Loss: 21dB
Supplier Device Package: PG-TSNP-6-2
Description: RF DIR COUPLER 600MHZ~2.7GHZ
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 600MHz ~ 2.7GHz
RF Type: Cellular, CDMA, GSM, HSPA+, LTE, TD-SCDMA, W-CDMA
Insertion Loss: 0.3dB
Applications: Cellular, GSM
Coupler Type: Coupler, With Filter
Return Loss: 21dB
Supplier Device Package: PG-TSNP-6-2
на замовлення 12217 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 31.77 грн |
| 14+ | 21.34 грн |
| 25+ | 19.04 грн |
| 100+ | 15.52 грн |
| 250+ | 14.39 грн |
| 500+ | 13.71 грн |
| 1000+ | 12.94 грн |
| 2500+ | 12.36 грн |
| 5000+ | 12.01 грн |
| CDM10VD4XTSA1 |
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Виробник: Infineon Technologies
Description: IC DIMMER FLEXIBLE SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 11V ~ 25V
Applications: Dimming Controller
Supplier Device Package: PG-SOT23-6
Part Status: Active
Description: IC DIMMER FLEXIBLE SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 11V ~ 25V
Applications: Dimming Controller
Supplier Device Package: PG-SOT23-6
Part Status: Active
на замовлення 2994 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.65 грн |
| 13+ | 24.10 грн |
| 25+ | 21.55 грн |
| 100+ | 17.60 грн |
| 250+ | 16.34 грн |
| 500+ | 15.59 грн |
| 1000+ | 14.72 грн |
| IPC90N04S5L3R3ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 90A 8TDSON-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 45A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2V @ 23µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2145 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 90A 8TDSON-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 45A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2V @ 23µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2145 pF @ 25 V
Qualification: AEC-Q101
на замовлення 11344 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 106.94 грн |
| 10+ | 64.85 грн |
| 100+ | 43.08 грн |
| 500+ | 31.66 грн |
| 1000+ | 28.85 грн |
| 2000+ | 26.48 грн |
| IPT60R028G7XTMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 75A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 28.8A, 10V
Power Dissipation (Max): 391W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.44mA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 400 V
Description: MOSFET N-CH 600V 75A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 28.8A, 10V
Power Dissipation (Max): 391W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.44mA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 400 V
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| TLE49655MXTSA1 |
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Виробник: Infineon Technologies
Description: MAGNETIC SWITCH HALL EFF SOT23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 170°C
Voltage - Supply: 3V ~ 5.5V
Technology: Hall Effect
Sensing Range: 10.4mT Trip, 2.8mT Release
Current - Output (Max): 5mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
Part Status: Active
Description: MAGNETIC SWITCH HALL EFF SOT23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 170°C
Voltage - Supply: 3V ~ 5.5V
Technology: Hall Effect
Sensing Range: 10.4mT Trip, 2.8mT Release
Current - Output (Max): 5mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
Part Status: Active
на замовлення 1908 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.22 грн |
| 12+ | 25.97 грн |
| 13+ | 24.48 грн |
| 25+ | 21.37 грн |
| 50+ | 20.28 грн |
| 100+ | 19.29 грн |
| 500+ | 17.04 грн |
| 1000+ | 16.31 грн |
| 1EDC05I12AHXUMA1 |
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Виробник: Infineon Technologies
Description: DGT ISO 2.5KV 1CH GT DVR DSO8-59
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Voltage - Isolation: 2500Vrms
Supplier Device Package: PG-DSO-8-59
Rise / Fall Time (Typ): 10ns, 9ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 3.1V ~ 17V
Description: DGT ISO 2.5KV 1CH GT DVR DSO8-59
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Voltage - Isolation: 2500Vrms
Supplier Device Package: PG-DSO-8-59
Rise / Fall Time (Typ): 10ns, 9ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 3.1V ~ 17V
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од. на суму грн.
| 1EDC10I12MHXUMA1 |
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Виробник: Infineon Technologies
Description: DGT ISO 2.5KV 1CH GT DVR DSO8-59
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Voltage - Isolation: 2500Vrms
Supplier Device Package: PG-DSO-8-59
Rise / Fall Time (Typ): 10ns, 9ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 3.1V ~ 17V
Description: DGT ISO 2.5KV 1CH GT DVR DSO8-59
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Voltage - Isolation: 2500Vrms
Supplier Device Package: PG-DSO-8-59
Rise / Fall Time (Typ): 10ns, 9ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 3.1V ~ 17V
на замовлення 713 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 219.30 грн |
| 10+ | 189.31 грн |
| 25+ | 178.91 грн |
| 100+ | 145.51 грн |
| 250+ | 138.05 грн |
| 500+ | 123.87 грн |
| 1EDC20H12AHXUMA1 |
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Виробник: Infineon Technologies
Description: DGT ISO 2.5KV 1CH GT DVR DSO8-59
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Voltage - Isolation: 2500Vrms
Supplier Device Package: PG-DSO-8-59
Rise / Fall Time (Typ): 10ns, 9ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 3.1V ~ 17V
Description: DGT ISO 2.5KV 1CH GT DVR DSO8-59
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Voltage - Isolation: 2500Vrms
Supplier Device Package: PG-DSO-8-59
Rise / Fall Time (Typ): 10ns, 9ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 3.1V ~ 17V
товару немає в наявності
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од. на суму грн.
| BGA123L4E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC AMP BEIDOU GALI 1.55-1.615GHZ
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: Beidou, Galileo, GLONASS, GPS
Voltage - Supply: 1.1V ~ 3.6V
Gain: 18.4dB
Current - Supply: 1.1mA
Noise Figure: 0.75dB
Test Frequency: 1.55GHz ~ 1.615GHz
Part Status: Active
Description: IC AMP BEIDOU GALI 1.55-1.615GHZ
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: Beidou, Galileo, GLONASS, GPS
Voltage - Supply: 1.1V ~ 3.6V
Gain: 18.4dB
Current - Supply: 1.1mA
Noise Figure: 0.75dB
Test Frequency: 1.55GHz ~ 1.615GHz
Part Status: Active
на замовлення 24138 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 56.57 грн |
| 10+ | 41.64 грн |
| 25+ | 37.43 грн |
| 100+ | 30.13 грн |
| 250+ | 27.40 грн |
| 500+ | 25.61 грн |
| 1000+ | 23.63 грн |
| 5000+ | 20.70 грн |
| BGA8V1BN6E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC RF AMP 3.4GHZ-3.8GHZ TSNP6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 3.4GHz ~ 3.8GHz
Voltage - Supply: 1.6V ~ 3.1V
Current - Supply: 4.2mA
Noise Figure: 1.2dB ~ 5.3dB
P1dB: -3dBm
Test Frequency: 3.4GHz ~ 3.8GHz
Supplier Device Package: PG-TSNP-6-2
Description: IC RF AMP 3.4GHZ-3.8GHZ TSNP6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 3.4GHz ~ 3.8GHz
Voltage - Supply: 1.6V ~ 3.1V
Current - Supply: 4.2mA
Noise Figure: 1.2dB ~ 5.3dB
P1dB: -3dBm
Test Frequency: 3.4GHz ~ 3.8GHz
Supplier Device Package: PG-TSNP-6-2
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| BSC010N04LSTATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 39A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9520 pF @ 20 V
Description: MOSFET N-CH 40V 39A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9520 pF @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
| BSC011N03LSTATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 39A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 15 V
Description: MOSFET N-CH 30V 39A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 15 V
на замовлення 4598 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 199.15 грн |
| 10+ | 124.24 грн |
| 100+ | 85.89 грн |
| 500+ | 67.78 грн |
| BSC014N04LSTATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 33A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6020 pF @ 20 V
Description: MOSFET N-CH 40V 33A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6020 pF @ 20 V
на замовлення 7804 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 158.86 грн |
| 10+ | 98.05 грн |
| 100+ | 66.81 грн |
| 500+ | 50.15 грн |
| 1000+ | 49.17 грн |
| BSC014N06NSTATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 100A TDSON-8 FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 120µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8125 pF @ 30 V
Description: MOSFET N-CH 60V 100A TDSON-8 FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 120µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8125 pF @ 30 V
на замовлення 4361 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 184.43 грн |
| 10+ | 114.77 грн |
| 100+ | 78.58 грн |
| 500+ | 59.21 грн |
| 1000+ | 54.99 грн |
| BSC016N06NSTATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 31A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 95µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 30 V
Description: MOSFET N-CH 60V 31A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 95µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 30 V
на замовлення 13915 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 281.29 грн |
| 10+ | 177.52 грн |
| 100+ | 124.53 грн |
| 500+ | 97.25 грн |
| BSC019N06NSATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 100A TDSON-8 FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Ta)
Vgs(th) (Max) @ Id: 3.3V @ 74µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 30 V
Description: MOSFET N-CH 60V 100A TDSON-8 FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Ta)
Vgs(th) (Max) @ Id: 3.3V @ 74µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 30 V
на замовлення 16587 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 112.36 грн |
| 10+ | 79.55 грн |
| 25+ | 72.23 грн |
| 100+ | 60.29 грн |
| 250+ | 56.71 грн |
| 500+ | 54.73 грн |
| BSC028N06NSTATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 24A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3375 pF @ 30 V
Description: MOSFET N-CH 60V 24A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3375 pF @ 30 V
на замовлення 12320 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 231.70 грн |
| 10+ | 144.39 грн |
| 100+ | 99.72 грн |
| 500+ | 75.64 грн |
| 1000+ | 69.88 грн |
| 2000+ | 66.30 грн |
| BSC097N06NSTATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 13A/48A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 1075 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 3.3V @ 14µA
Power Dissipation (Max): 3W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 13A/48A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 1075 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 3.3V @ 14µA
Power Dissipation (Max): 3W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.






























