Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (119577) > Сторінка 314 з 1993
| Фото | Назва | Виробник | Інформація |
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TLS810B1LDV33XUMA1 | Infineon Technologies |
Description: IC REG LINEAR 3.3V 100MA TSON-10Packaging: Cut Tape (CT) Package / Case: 10-TFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 100mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 10 µA Voltage - Input (Max): 42V Number of Regulators: 1 Supplier Device Package: PG-TSON-10 Voltage - Output (Min/Fixed): 3.3V Control Features: Enable Grade: Automotive PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.65V @ 100mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 15 µA Qualification: AEC-Q100 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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IPT60R050G7XTMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 44A 8HSOFPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 15.9A, 10V Power Dissipation (Max): 245W (Tc) Vgs(th) (Max) @ Id: 4V @ 800µA Supplier Device Package: PG-HSOF-8-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 400 V |
на замовлення 4947 шт: термін постачання 21-31 дні (днів) |
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BGA8U1BN6E6327XTSA1 | Infineon Technologies |
Description: IC RF AMP 5.15GHZ-5.85GHZ TSNP6Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Mounting Type: Surface Mount Frequency: 5.15GHz ~ 5.85GHz Voltage - Supply: 1.6V ~ 3.1V Current - Supply: 4mA Noise Figure: 1.6dB ~ 5dB P1dB: -5dBm Test Frequency: 5.15GHz ~ 5.85GHz Supplier Device Package: PG-TSNP-6-2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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ESD246B1W01005E6327XTSA1 | Infineon Technologies |
Description: TVS DIODE 5.5VWM 7.5V SGWLL22Packaging: Cut Tape (CT) Package / Case: 01005 (0402 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C Applications: General Purpose Capacitance @ Frequency: 5.5pF @ 1GHz Current - Peak Pulse (10/1000µs): 5.5A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V Supplier Device Package: SG-WLL-2-2 Bidirectional Channels: 1 Voltage - Clamping (Max) @ Ipp: 7.5V Power - Peak Pulse: 44W Power Line Protection: No |
на замовлення 43198 шт: термін постачання 21-31 дні (днів) |
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IPB60R120C7ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 19A TO263-3Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 10V Power Dissipation (Max): 92W (Tc) Vgs(th) (Max) @ Id: 4V @ 390µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IPC90N04S53R6ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 90A 8TDSON-34Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 45A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 23µA Supplier Device Package: PG-TDSON-8-34 Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5200 шт: термін постачання 21-31 дні (днів) |
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IR38363MTRPBFAUMA1 | Infineon Technologies |
Description: IC REG BUCK ADJ 15A 34PQFNPackaging: Cut Tape (CT) Package / Case: 34-PowerVFQFN Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 15A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 150kHz ~ 1.5MHz Voltage - Input (Max): 16V Topology: Buck Supplier Device Package: 34-PQFN (5x7) Synchronous Rectifier: Yes Voltage - Output (Max): 14V Voltage - Input (Min): 1.5V Voltage - Output (Min/Fixed): 0.5V |
на замовлення 4035 шт: термін постачання 21-31 дні (днів) |
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BGC100GN6E6327XTSA1 | Infineon Technologies |
Description: RF DIR COUPLER 600MHZ~2.7GHZPackaging: Cut Tape (CT) Package / Case: 6-XFDFN Mounting Type: Surface Mount Frequency: 600MHz ~ 2.7GHz RF Type: Cellular, CDMA, GSM, HSPA+, LTE, TD-SCDMA, W-CDMA Supplier Device Package: PG-TSNP-6-2 Insertion Loss: 0.3dB Applications: Cellular, GSM Coupler Type: Coupler, With Filter Return Loss: 21dB |
на замовлення 12217 шт: термін постачання 21-31 дні (днів) |
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CDM10VD4XTSA1 | Infineon Technologies |
Description: IC DIMMER FLEXIBLE SOT23-6Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C Voltage - Supply: 11V ~ 25V Applications: Dimming Controller Supplier Device Package: PG-SOT23-6 Part Status: Active |
на замовлення 2994 шт: термін постачання 21-31 дні (днів) |
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IPC90N04S5L3R3ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 90A 8TDSON-34Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 45A, 10V Power Dissipation (Max): 62W (Tc) Vgs(th) (Max) @ Id: 2V @ 23µA Supplier Device Package: PG-TDSON-8-34 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2145 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 11344 шт: термін постачання 21-31 дні (днів) |
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IPT60R028G7XTMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 75A 8HSOFPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 28.8A, 10V Power Dissipation (Max): 391W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.44mA Supplier Device Package: PG-HSOF-8-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TLE49655MXTSA1 | Infineon Technologies |
Description: MAGNETIC SWITCH HALL EFF SOT23-3Packaging: Cut Tape (CT) Features: Temperature Compensated Package / Case: TO-236-3, SC-59, SOT-23-3 Output Type: Open Drain Polarization: South Pole Mounting Type: Surface Mount Function: Unipolar Switch Operating Temperature: -40°C ~ 170°C Voltage - Supply: 3V ~ 5.5V Technology: Hall Effect Sensing Range: 10.4mT Trip, 2.8mT Release Current - Output (Max): 5mA Current - Supply (Max): 2.5mA Supplier Device Package: PG-SOT23-3-15 Test Condition: 25°C Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1EDC05I12AHXUMA1 | Infineon Technologies |
Description: DGT ISO 2.5KV 1CH GT DVR DSO8-59Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: Magnetic Coupling Voltage - Isolation: 2500Vrms Supplier Device Package: PG-DSO-8-59 Rise / Fall Time (Typ): 10ns, 9ns Part Status: Active Number of Channels: 1 Voltage - Output Supply: 3.1V ~ 17V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1EDC10I12MHXUMA1 | Infineon Technologies |
Description: DGT ISO 2.5KV 1CH GT DVR DSO8-59Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: Magnetic Coupling Voltage - Isolation: 2500Vrms Supplier Device Package: PG-DSO-8-59 Rise / Fall Time (Typ): 10ns, 9ns Part Status: Active Number of Channels: 1 Voltage - Output Supply: 3.1V ~ 17V |
на замовлення 713 шт: термін постачання 21-31 дні (днів) |
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1EDC20H12AHXUMA1 | Infineon Technologies |
Description: DGT ISO 2.5KV 1CH GT DVR DSO8-59Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: Magnetic Coupling Voltage - Isolation: 2500Vrms Supplier Device Package: PG-DSO-8-59 Rise / Fall Time (Typ): 10ns, 9ns Part Status: Active Number of Channels: 1 Voltage - Output Supply: 3.1V ~ 17V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BGA123L4E6327XTSA1 | Infineon Technologies |
Description: IC AMP BEIDOU GALI 1.55-1.615GHZPackaging: Cut Tape (CT) Package / Case: 4-XFDFN Mounting Type: Surface Mount Frequency: 1.55GHz ~ 1.615GHz RF Type: Beidou, Galileo, GLONASS, GPS Voltage - Supply: 1.1V ~ 3.6V Gain: 18.4dB Current - Supply: 1.1mA Noise Figure: 0.75dB Test Frequency: 1.55GHz ~ 1.615GHz Part Status: Active |
на замовлення 24138 шт: термін постачання 21-31 дні (днів) |
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BGA8V1BN6E6327XTSA1 | Infineon Technologies |
Description: IC RF AMP 3.4GHZ-3.8GHZ TSNP6Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Mounting Type: Surface Mount Frequency: 3.4GHz ~ 3.8GHz Voltage - Supply: 1.6V ~ 3.1V Current - Supply: 4.2mA Noise Figure: 1.2dB ~ 5.3dB P1dB: -3dBm Test Frequency: 3.4GHz ~ 3.8GHz Supplier Device Package: PG-TSNP-6-2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BSC010N04LSTATMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 39A/100A TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8 FL Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9520 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BSC011N03LSTATMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 39A/100A TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V Power Dissipation (Max): 3W (Ta), 115W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8 FL Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 15 V |
на замовлення 4598 шт: термін постачання 21-31 дні (днів) |
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BSC014N04LSTATMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 33A/100A TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 115W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8 FL Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6020 pF @ 20 V |
на замовлення 8804 шт: термін постачання 21-31 дні (днів) |
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BSC014N06NSTATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 100A TDSON-8 FLPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.45mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 188W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 120µA Supplier Device Package: PG-TDSON-8 FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8125 pF @ 30 V |
на замовлення 5116 шт: термін постачання 21-31 дні (днів) |
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BSC016N06NSTATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 31A/100A TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 95µA Supplier Device Package: PG-TDSON-8 FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 30 V |
на замовлення 4125 шт: термін постачання 21-31 дні (днів) |
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BSC019N06NSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 100A TDSON-8 FLPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 1.95mOhm @ 50A, 10V Power Dissipation (Max): 136W (Ta) Vgs(th) (Max) @ Id: 3.3V @ 74µA Supplier Device Package: PG-TDSON-8 FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BSC028N06NSTATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 24A/100A TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 50µA Supplier Device Package: PG-TDSON-8-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3375 pF @ 30 V |
на замовлення 17462 шт: термін постачання 21-31 дні (днів) |
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BSC097N06NSTATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 13A/48A TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 48A (Tc) Rds On (Max) @ Id, Vgs: 9.7mOhm @ 40A, 10V Power Dissipation (Max): 3W (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 14µA Supplier Device Package: PG-TDSON-8-1 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1075 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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ESD245B1W0201E6327XTSA1 | Infineon Technologies |
Description: TVS DIODE 5.5VWM 7.5VC WLL-2-3Packaging: Cut Tape (CT) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C Applications: General Purpose Capacitance @ Frequency: 5.8pF @ 1GHz Current - Peak Pulse (10/1000µs): 5.5A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V Supplier Device Package: WLL-2-3 Bidirectional Channels: 1 Voltage - Clamping (Max) @ Ipp: 7.5V Power - Peak Pulse: 44W Power Line Protection: No Part Status: Active |
на замовлення 14395 шт: термін постачання 21-31 дні (днів) |
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ICL5102XUMA1 | Infineon Technologies |
Description: IC LED DRIVER OFFL NO 16DSOPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 1.3MHz Type: AC DC Offline Switcher Operating Temperature: -40°C ~ 125°C (TJ) Applications: LED Lighting Internal Switch(s): No Topology: Half-Bridge Supplier Device Package: PG-DSO-16-23 Dimming: No Voltage - Supply (Min): 8.5V Voltage - Supply (Max): 18V Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IMC102TF064XUMA1 | Infineon Technologies |
Description: IC MOTOR DRIVER 3V-5.5V 64LQFPPackaging: Cut Tape (CT) Package / Case: 64-LQFP Mounting Type: Surface Mount Function: Controller Current - Output: 50mA Interface: Analog, PWM Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 3V ~ 5.5V Applications: Home Appliance Supplier Device Package: PG-LQFP-64-26 Motor Type - AC, DC: AC, Synchronous Part Status: Active |
на замовлення 1700 шт: термін постачання 21-31 дні (днів) |
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IPT60R080G7XTMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 29A 8HSOFPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 9.7A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 490µA Supplier Device Package: PG-HSOF-8-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 400 V |
на замовлення 5341 шт: термін постачання 21-31 дні (днів) |
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TLE493DW2B6A0HTSA1 | Infineon Technologies |
Description: SEN HALL EFFECT I2C PG-TSOP6-6-8Packaging: Cut Tape (CT) Features: Programmable Package / Case: SOT-23-6 Thin, TSOT-23-6 Output Type: I2C Mounting Type: Surface Mount Axis: X, Y, Z Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 2.8V ~ 3.5V Technology: Hall Effect Resolution: 12 b Sensing Range: ±160mT ~ ±230mT Current - Supply (Max): 0.13µA Supplier Device Package: PG-TSOP6-6-8 Grade: Automotive Qualification: AEC-Q100 |
на замовлення 13188 шт: термін постачання 21-31 дні (днів) |
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TLE493DW2B6A1HTSA1 | Infineon Technologies |
Description: SEN HALL EFFECT I2C PG-TSOP6-6-8Packaging: Cut Tape (CT) Features: Programmable Package / Case: SOT-23-6 Thin, TSOT-23-6 Output Type: I2C Mounting Type: Surface Mount Axis: X, Y, Z Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 2.8V ~ 3.5V Technology: Hall Effect Resolution: 12 b Sensing Range: ±160mT ~ ±230mT Current - Supply (Max): 0.13µA Supplier Device Package: PG-TSOP6-6-8 Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 1440 шт: термін постачання 21-31 дні (днів) |
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TLE493DW2B6A2HTSA1 | Infineon Technologies |
Description: SEN HALL EFFECT I2C PG-TSOP6-6-8Packaging: Cut Tape (CT) Features: Programmable Package / Case: SOT-23-6 Thin, TSOT-23-6 Output Type: I2C Mounting Type: Surface Mount Axis: X, Y, Z Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 2.8V ~ 3.5V Technology: Hall Effect Resolution: 12 b Sensing Range: ±160mT ~ ±230mT Current - Supply (Max): 0.13µA Supplier Device Package: PG-TSOP6-6-8 Grade: Automotive Qualification: AEC-Q100 |
на замовлення 874 шт: термін постачання 21-31 дні (днів) |
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TLE493DW2B6A3HTSA1 | Infineon Technologies |
Description: SEN HALL EFFECT I2C PG-TSOP6-6-8Packaging: Cut Tape (CT) Features: Programmable Package / Case: SOT-23-6 Thin, TSOT-23-6 Output Type: I2C Mounting Type: Surface Mount Axis: X, Y, Z Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 2.8V ~ 3.5V Technology: Hall Effect Resolution: 12 b Sensing Range: ±160mT ~ ±230mT Current - Supply (Max): 0.13µA Supplier Device Package: PG-TSOP6-6-8 Grade: Automotive Qualification: AEC-Q100 |
на замовлення 1794 шт: термін постачання 21-31 дні (днів) |
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TLS202B1MBV50HTSA1 | Infineon Technologies |
Description: IC REG LIN 5V 150MA PG-SCT595-5Packaging: Cut Tape (CT) Package / Case: 6-SMD (5 Leads), Gull Wing Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 75 µA Voltage - Input (Max): 18V Number of Regulators: 1 Supplier Device Package: PG-SCT595-5 Voltage - Output (Min/Fixed): 5V Control Features: Enable Part Status: Active PSRR: 58dB (10kHz) Voltage Dropout (Max): 0.57V @ 150mA Protection Features: Over Current, Over Temperature, Short Circuit Current - Supply (Max): 200 µA Grade: Automotive Qualification: AEC-Q100 |
на замовлення 4770 шт: термін постачання 21-31 дні (днів) |
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TLS805D1LDV50XUMA1 | Infineon Technologies |
Description: IC REG LINEAR 5V 50MA PG-TSON-10Packaging: Cut Tape (CT) Package / Case: 10-TFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 50mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 11.5 µA Voltage - Input (Max): 42V Number of Regulators: 1 Supplier Device Package: PG-TSON-10 Voltage - Output (Min/Fixed): 5V Control Features: Enable Grade: Automotive PSRR: 55dB (100Hz) Voltage Dropout (Max): 0.3V @ 50mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 16 µA Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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AUIR3241STR | Infineon Technologies |
Description: IC GATE DRVR HIGH-SIDE 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 3V ~ 36V Input Type: Non-Inverting Supplier Device Package: PG-DSO-8-903 Rise / Fall Time (Typ): 6µs, 6µs Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 350mA, 350mA Part Status: Active DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
на замовлення 4731 шт: термін постачання 21-31 дні (днів) |
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AUIRS1170STR | Infineon Technologies |
Description: IC GATE DRIVER 200V 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Voltage - Input: 200V Operating Temperature: -25°C ~ 125°C (TJ) Voltage - Supply: 11V ~ 18V Applications: Secondary-Side Controller Supplier Device Package: PG-DSO-8-900 Current - Supply: 45 mA DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BGA5H1BN6E6327XTSA1 | Infineon Technologies |
Description: IC RF AMP LTE 2.3GHZ-2.69GHZPackaging: Cut Tape (CT) Package / Case: 6-XFDFN Mounting Type: Surface Mount Frequency: 2.3GHz ~ 2.69GHz RF Type: LTE Voltage - Supply: 1.5V ~ 3.6V Gain: 18.1dB Current - Supply: 8.5mA Noise Figure: 0.7dB P1dB: -17dBm Test Frequency: 2.5GHz |
на замовлення 4040 шт: термін постачання 21-31 дні (днів) |
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IAUT200N08S5N023ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 200A 8HSOFPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 130µA Supplier Device Package: PG-HSOF-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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IAUT240N08S5N019ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 240A 8HSOFPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 160µA Supplier Device Package: PG-HSOF-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9264 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 392 шт: термін постачання 21-31 дні (днів) |
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TLE9104SHXUMA1 | Infineon Technologies |
Description: IC POWERTRAIN SWITCH DSO20-88Packaging: Cut Tape (CT) Package / Case: 20-BFSOP (0.295", 7.50mm Width) Exposed Pad Mounting Type: Surface Mount Type: Powertrain Switch Supplier Device Package: PG-DSO-20-88 DigiKey Programmable: Not Verified Features: Slew Rate Controlled, Status Flag Output Type: N-Channel Number of Outputs: 4 Interface: SPI Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C Output Configuration: Low Side Rds On (Typ): 150mOhm Input Type: Non-Inverting Voltage - Load: 50V ~ 60V Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Current - Output (Max): 3A Ratio - Input:Output: 1:1 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Reverse Battery, Short Circuit |
на замовлення 1384 шт: термін постачання 21-31 дні (днів) |
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TLS850B0TBV50ATMA1 | Infineon Technologies |
Description: IC REG LIN 5V 500MA PG-TO263-5-1Packaging: Cut Tape (CT) Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 25 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-TO263-5-1 Voltage - Output (Min/Fixed): 5V Control Features: Enable Part Status: Active PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.5V @ 250mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 33 µA Grade: Automotive Qualification: AEC-Q100 |
на замовлення 3258 шт: термін постачання 21-31 дні (днів) |
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IAUT200N08S5N023ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 200A 8HSOFPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 130µA Supplier Device Package: PG-HSOF-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6401 шт: термін постачання 21-31 дні (днів) |
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IAUT165N08S5N029ATMA2 | Infineon Technologies |
Description: MOSFET N-CH 80V 165A 8HSOFPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 165A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 108µA Supplier Device Package: PG-HSOF-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6370 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3959 шт: термін постачання 21-31 дні (днів) |
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IAUT300N10S5N015ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 300A 8HSOFPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 275µA Supplier Device Package: PG-HSOF-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16011 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 7783 шт: термін постачання 21-31 дні (днів) |
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IAUT260N10S5N019ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 260A 8HSOFPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 260A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 210µA Supplier Device Package: PG-HSOF-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11830 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1489 шт: термін постачання 21-31 дні (днів) |
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IAUT150N10S5N035ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 150A 8HSOFPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 75A, 10V Power Dissipation (Max): 166W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 110µA Supplier Device Package: PG-HSOF-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6110 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2683 шт: термін постачання 21-31 дні (днів) |
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| FF800R17KF6CB2NOSA2 | Infineon Technologies |
Description: IGBT MODULE A-IHM130-1 Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLE49452WAFERX6SA1 | Infineon Technologies |
Description: MAGNETIC FIELD SWITCH Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLE4945CHIPX1SA1 | Infineon Technologies |
Description: MAGNETIC FIELD SWITCH Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| AUXMIGP4063D | Infineon Technologies |
Description: IGBT 600V TO-247 COPAK Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MB2198-503-E | Infineon Technologies |
Description: TOOL KIT Packaging: Bulk Supplied Contents: Board(s) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MB2198-508-E | Infineon Technologies |
Description: TOOL KITPackaging: Bulk Supplied Contents: Board(s) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| AUIRG4PH50S-205 | Infineon Technologies |
Description: IGBT 1200V 141A TO-247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 33A Supplier Device Package: TO-247AC Td (on/off) @ 25°C: -/616ns Switching Energy: 16mJ (off) Test Condition: 600V, 33A, 5Ohm, 15V Gate Charge: 227 nC Part Status: Obsolete Current - Collector (Ic) (Max): 141 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 99 A Power - Max: 543 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| AUXKNG4PH50S-215 | Infineon Technologies |
Description: IGBT 1200V TO247-3 Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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IKB40N65EF5ATMA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 74A TO263-3Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 83 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: PG-TO263-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 22ns/160ns Switching Energy: 420µJ (on), 100µJ (off) Test Condition: 400V, 40A, 15Ohm, 15V Gate Charge: 95 nC Part Status: Active Current - Collector (Ic) (Max): 74 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 250 W |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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IKB40N65EH5ATMA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 74A TO263-3Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 78 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: PG-TO263-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 20ns/157ns Switching Energy: 1.1mJ (on), 400µJ (off) Test Condition: 400V, 40A, 15Ohm, 15V Gate Charge: 95 nC Part Status: Active Current - Collector (Ic) (Max): 74 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 250 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IKB40N65ES5ATMA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 79A TO263-3Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 73 ns Vce(on) (Max) @ Vge, Ic: 1.74V @ 15V, 40A Supplier Device Package: PG-TO263-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 19ns/130ns Switching Energy: 860µJ (on), 400µJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 95 nC Part Status: Active Current - Collector (Ic) (Max): 79 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 230 W |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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IGB50N65S5ATMA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 80A TO263-3Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A Supplier Device Package: PG-TO263-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 20ns/139ns Switching Energy: 1.23mJ (on), 740µJ (off) Test Condition: 400V, 50A, 8.2Ohm, 15V Gate Charge: 120 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 270 W |
на замовлення 3995 шт: термін постачання 21-31 дні (днів) |
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IGB50N65H5ATMA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 80A TO263-3Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: PG-TO263-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 23ns/173ns Switching Energy: 1.59mJ (on), 750µJ (off) Test Condition: 400V, 50A, 12Ohm, 15V Gate Charge: 120 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 270 W |
на замовлення 2429 шт: термін постачання 21-31 дні (днів) |
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| TLS810B1LDV33XUMA1 |
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Виробник: Infineon Technologies
Description: IC REG LINEAR 3.3V 100MA TSON-10
Packaging: Cut Tape (CT)
Package / Case: 10-TFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TSON-10
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.65V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 15 µA
Qualification: AEC-Q100
Description: IC REG LINEAR 3.3V 100MA TSON-10
Packaging: Cut Tape (CT)
Package / Case: 10-TFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TSON-10
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.65V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 15 µA
Qualification: AEC-Q100
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 101.47 грн |
| 10+ | 70.96 грн |
| 25+ | 64.34 грн |
| 100+ | 53.54 грн |
| 250+ | 50.28 грн |
| 500+ | 48.31 грн |
| 1000+ | 45.93 грн |
| 2500+ | 44.24 грн |
| IPT60R050G7XTMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 44A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 15.9A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 400 V
Description: MOSFET N-CH 600V 44A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 15.9A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 400 V
на замовлення 4947 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 594.01 грн |
| 10+ | 391.31 грн |
| 100+ | 311.62 грн |
| BGA8U1BN6E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC RF AMP 5.15GHZ-5.85GHZ TSNP6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 5.15GHz ~ 5.85GHz
Voltage - Supply: 1.6V ~ 3.1V
Current - Supply: 4mA
Noise Figure: 1.6dB ~ 5dB
P1dB: -5dBm
Test Frequency: 5.15GHz ~ 5.85GHz
Supplier Device Package: PG-TSNP-6-2
Description: IC RF AMP 5.15GHZ-5.85GHZ TSNP6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 5.15GHz ~ 5.85GHz
Voltage - Supply: 1.6V ~ 3.1V
Current - Supply: 4mA
Noise Figure: 1.6dB ~ 5dB
P1dB: -5dBm
Test Frequency: 5.15GHz ~ 5.85GHz
Supplier Device Package: PG-TSNP-6-2
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| ESD246B1W01005E6327XTSA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 5.5VWM 7.5V SGWLL22
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Capacitance @ Frequency: 5.5pF @ 1GHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: SG-WLL-2-2
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 7.5V
Power - Peak Pulse: 44W
Power Line Protection: No
Description: TVS DIODE 5.5VWM 7.5V SGWLL22
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Capacitance @ Frequency: 5.5pF @ 1GHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: SG-WLL-2-2
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 7.5V
Power - Peak Pulse: 44W
Power Line Protection: No
на замовлення 43198 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 6.24 грн |
| 66+ | 4.59 грн |
| 164+ | 1.84 грн |
| 500+ | 1.67 грн |
| 1000+ | 1.61 грн |
| 2000+ | 1.58 грн |
| 5000+ | 1.52 грн |
| IPB60R120C7ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 19A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 390µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
Description: MOSFET N-CH 600V 19A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 390µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
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| IPC90N04S53R6ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 90A 8TDSON-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 45A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 23µA
Supplier Device Package: PG-TDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 90A 8TDSON-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 45A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 23µA
Supplier Device Package: PG-TDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5200 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 103.82 грн |
| 10+ | 63.29 грн |
| 100+ | 42.07 грн |
| 500+ | 30.93 грн |
| 1000+ | 28.18 грн |
| 2000+ | 25.86 грн |
| IR38363MTRPBFAUMA1 |
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Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 15A 34PQFN
Packaging: Cut Tape (CT)
Package / Case: 34-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 15A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 150kHz ~ 1.5MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: 34-PQFN (5x7)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.5V
Description: IC REG BUCK ADJ 15A 34PQFN
Packaging: Cut Tape (CT)
Package / Case: 34-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 15A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 150kHz ~ 1.5MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: 34-PQFN (5x7)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.5V
на замовлення 4035 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 388.72 грн |
| 10+ | 286.76 грн |
| 25+ | 264.85 грн |
| 100+ | 225.91 грн |
| 250+ | 215.12 грн |
| 500+ | 208.62 грн |
| 1000+ | 199.93 грн |
| BGC100GN6E6327XTSA1 |
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Виробник: Infineon Technologies
Description: RF DIR COUPLER 600MHZ~2.7GHZ
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 600MHz ~ 2.7GHz
RF Type: Cellular, CDMA, GSM, HSPA+, LTE, TD-SCDMA, W-CDMA
Supplier Device Package: PG-TSNP-6-2
Insertion Loss: 0.3dB
Applications: Cellular, GSM
Coupler Type: Coupler, With Filter
Return Loss: 21dB
Description: RF DIR COUPLER 600MHZ~2.7GHZ
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 600MHz ~ 2.7GHz
RF Type: Cellular, CDMA, GSM, HSPA+, LTE, TD-SCDMA, W-CDMA
Supplier Device Package: PG-TSNP-6-2
Insertion Loss: 0.3dB
Applications: Cellular, GSM
Coupler Type: Coupler, With Filter
Return Loss: 21dB
на замовлення 12217 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 32.00 грн |
| 14+ | 21.50 грн |
| 25+ | 19.18 грн |
| 100+ | 15.63 грн |
| 250+ | 14.49 грн |
| 500+ | 13.81 грн |
| 1000+ | 13.03 грн |
| 2500+ | 12.45 грн |
| 5000+ | 12.09 грн |
| CDM10VD4XTSA1 |
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Виробник: Infineon Technologies
Description: IC DIMMER FLEXIBLE SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 11V ~ 25V
Applications: Dimming Controller
Supplier Device Package: PG-SOT23-6
Part Status: Active
Description: IC DIMMER FLEXIBLE SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 11V ~ 25V
Applications: Dimming Controller
Supplier Device Package: PG-SOT23-6
Part Status: Active
на замовлення 2994 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 35.91 грн |
| 13+ | 24.28 грн |
| 25+ | 21.71 грн |
| 100+ | 17.73 грн |
| 250+ | 16.46 грн |
| 500+ | 15.70 грн |
| 1000+ | 14.82 грн |
| IPC90N04S5L3R3ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 90A 8TDSON-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 45A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2V @ 23µA
Supplier Device Package: PG-TDSON-8-34
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2145 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 90A 8TDSON-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 45A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2V @ 23µA
Supplier Device Package: PG-TDSON-8-34
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2145 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 11344 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 103.82 грн |
| 10+ | 63.29 грн |
| 100+ | 42.07 грн |
| 500+ | 30.93 грн |
| 1000+ | 28.18 грн |
| 2000+ | 25.86 грн |
| IPT60R028G7XTMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 75A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 28.8A, 10V
Power Dissipation (Max): 391W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.44mA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 400 V
Description: MOSFET N-CH 600V 75A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 28.8A, 10V
Power Dissipation (Max): 391W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.44mA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 400 V
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| TLE49655MXTSA1 |
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Виробник: Infineon Technologies
Description: MAGNETIC SWITCH HALL EFF SOT23-3
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 170°C
Voltage - Supply: 3V ~ 5.5V
Technology: Hall Effect
Sensing Range: 10.4mT Trip, 2.8mT Release
Current - Output (Max): 5mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
Part Status: Active
Description: MAGNETIC SWITCH HALL EFF SOT23-3
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 170°C
Voltage - Supply: 3V ~ 5.5V
Technology: Hall Effect
Sensing Range: 10.4mT Trip, 2.8mT Release
Current - Output (Max): 5mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
Part Status: Active
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| 1EDC05I12AHXUMA1 |
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Виробник: Infineon Technologies
Description: DGT ISO 2.5KV 1CH GT DVR DSO8-59
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Voltage - Isolation: 2500Vrms
Supplier Device Package: PG-DSO-8-59
Rise / Fall Time (Typ): 10ns, 9ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 3.1V ~ 17V
Description: DGT ISO 2.5KV 1CH GT DVR DSO8-59
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Voltage - Isolation: 2500Vrms
Supplier Device Package: PG-DSO-8-59
Rise / Fall Time (Typ): 10ns, 9ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 3.1V ~ 17V
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| 1EDC10I12MHXUMA1 |
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Виробник: Infineon Technologies
Description: DGT ISO 2.5KV 1CH GT DVR DSO8-59
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Voltage - Isolation: 2500Vrms
Supplier Device Package: PG-DSO-8-59
Rise / Fall Time (Typ): 10ns, 9ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 3.1V ~ 17V
Description: DGT ISO 2.5KV 1CH GT DVR DSO8-59
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Voltage - Isolation: 2500Vrms
Supplier Device Package: PG-DSO-8-59
Rise / Fall Time (Typ): 10ns, 9ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 3.1V ~ 17V
на замовлення 713 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 220.90 грн |
| 10+ | 190.70 грн |
| 25+ | 180.22 грн |
| 100+ | 146.58 грн |
| 250+ | 139.06 грн |
| 500+ | 124.78 грн |
| 1EDC20H12AHXUMA1 |
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Виробник: Infineon Technologies
Description: DGT ISO 2.5KV 1CH GT DVR DSO8-59
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Voltage - Isolation: 2500Vrms
Supplier Device Package: PG-DSO-8-59
Rise / Fall Time (Typ): 10ns, 9ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 3.1V ~ 17V
Description: DGT ISO 2.5KV 1CH GT DVR DSO8-59
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Voltage - Isolation: 2500Vrms
Supplier Device Package: PG-DSO-8-59
Rise / Fall Time (Typ): 10ns, 9ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 3.1V ~ 17V
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од. на суму грн.
| BGA123L4E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC AMP BEIDOU GALI 1.55-1.615GHZ
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: Beidou, Galileo, GLONASS, GPS
Voltage - Supply: 1.1V ~ 3.6V
Gain: 18.4dB
Current - Supply: 1.1mA
Noise Figure: 0.75dB
Test Frequency: 1.55GHz ~ 1.615GHz
Part Status: Active
Description: IC AMP BEIDOU GALI 1.55-1.615GHZ
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: Beidou, Galileo, GLONASS, GPS
Voltage - Supply: 1.1V ~ 3.6V
Gain: 18.4dB
Current - Supply: 1.1mA
Noise Figure: 0.75dB
Test Frequency: 1.55GHz ~ 1.615GHz
Part Status: Active
на замовлення 24138 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 56.98 грн |
| 10+ | 41.94 грн |
| 25+ | 37.70 грн |
| 100+ | 30.35 грн |
| 250+ | 27.60 грн |
| 500+ | 25.79 грн |
| 1000+ | 23.80 грн |
| 5000+ | 20.85 грн |
| BGA8V1BN6E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC RF AMP 3.4GHZ-3.8GHZ TSNP6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 3.4GHz ~ 3.8GHz
Voltage - Supply: 1.6V ~ 3.1V
Current - Supply: 4.2mA
Noise Figure: 1.2dB ~ 5.3dB
P1dB: -3dBm
Test Frequency: 3.4GHz ~ 3.8GHz
Supplier Device Package: PG-TSNP-6-2
Description: IC RF AMP 3.4GHZ-3.8GHZ TSNP6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 3.4GHz ~ 3.8GHz
Voltage - Supply: 1.6V ~ 3.1V
Current - Supply: 4.2mA
Noise Figure: 1.2dB ~ 5.3dB
P1dB: -3dBm
Test Frequency: 3.4GHz ~ 3.8GHz
Supplier Device Package: PG-TSNP-6-2
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| BSC010N04LSTATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 39A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9520 pF @ 20 V
Description: MOSFET N-CH 40V 39A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9520 pF @ 20 V
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В кошику
од. на суму грн.
| BSC011N03LSTATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 39A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 15 V
Description: MOSFET N-CH 30V 39A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 15 V
на замовлення 4598 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 200.61 грн |
| 10+ | 125.15 грн |
| 100+ | 86.52 грн |
| 500+ | 68.28 грн |
| BSC014N04LSTATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 33A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6020 pF @ 20 V
Description: MOSFET N-CH 40V 33A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6020 pF @ 20 V
на замовлення 8804 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 165.48 грн |
| 10+ | 102.45 грн |
| 100+ | 69.82 грн |
| 500+ | 52.41 грн |
| 1000+ | 48.19 грн |
| 2000+ | 47.72 грн |
| BSC014N06NSTATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 100A TDSON-8 FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 120µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8125 pF @ 30 V
Description: MOSFET N-CH 60V 100A TDSON-8 FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 120µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8125 pF @ 30 V
на замовлення 5116 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 306.76 грн |
| 10+ | 194.30 грн |
| 100+ | 137.21 грн |
| 500+ | 110.06 грн |
| BSC016N06NSTATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 31A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 95µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 30 V
Description: MOSFET N-CH 60V 31A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 95µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 30 V
на замовлення 4125 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 274.76 грн |
| 10+ | 173.41 грн |
| 100+ | 121.64 грн |
| 500+ | 94.99 грн |
| BSC019N06NSATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 100A TDSON-8 FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Ta)
Vgs(th) (Max) @ Id: 3.3V @ 74µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 30 V
Description: MOSFET N-CH 60V 100A TDSON-8 FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Ta)
Vgs(th) (Max) @ Id: 3.3V @ 74µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 30 V
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од. на суму грн.
| BSC028N06NSTATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 24A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3375 pF @ 30 V
Description: MOSFET N-CH 60V 24A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3375 pF @ 30 V
на замовлення 17462 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 209.97 грн |
| 10+ | 130.86 грн |
| 100+ | 90.36 грн |
| 500+ | 68.54 грн |
| 1000+ | 65.82 грн |
| BSC097N06NSTATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 13A/48A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 14µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1075 pF @ 30 V
Description: MOSFET N-CH 60V 13A/48A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 14µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1075 pF @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
| ESD245B1W0201E6327XTSA1 |
![]() |
Виробник: Infineon Technologies
Description: TVS DIODE 5.5VWM 7.5VC WLL-2-3
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Capacitance @ Frequency: 5.8pF @ 1GHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 7.5V
Power - Peak Pulse: 44W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5.5VWM 7.5VC WLL-2-3
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Capacitance @ Frequency: 5.8pF @ 1GHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 7.5V
Power - Peak Pulse: 44W
Power Line Protection: No
Part Status: Active
на замовлення 14395 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 40+ | 7.81 грн |
| 69+ | 4.36 грн |
| 155+ | 1.95 грн |
| 500+ | 1.71 грн |
| 1000+ | 1.46 грн |
| 2000+ | 1.43 грн |
| 5000+ | 1.38 грн |
| ICL5102XUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC LED DRIVER OFFL NO 16DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.3MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: LED Lighting
Internal Switch(s): No
Topology: Half-Bridge
Supplier Device Package: PG-DSO-16-23
Dimming: No
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Part Status: Obsolete
Description: IC LED DRIVER OFFL NO 16DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.3MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: LED Lighting
Internal Switch(s): No
Topology: Half-Bridge
Supplier Device Package: PG-DSO-16-23
Dimming: No
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Part Status: Obsolete
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В кошику
од. на суму грн.
| IMC102TF064XUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 3V-5.5V 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Controller
Current - Output: 50mA
Interface: Analog, PWM
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 5.5V
Applications: Home Appliance
Supplier Device Package: PG-LQFP-64-26
Motor Type - AC, DC: AC, Synchronous
Part Status: Active
Description: IC MOTOR DRIVER 3V-5.5V 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Controller
Current - Output: 50mA
Interface: Analog, PWM
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 5.5V
Applications: Home Appliance
Supplier Device Package: PG-LQFP-64-26
Motor Type - AC, DC: AC, Synchronous
Part Status: Active
на замовлення 1700 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 565.13 грн |
| 10+ | 370.42 грн |
| 100+ | 271.82 грн |
| 500+ | 253.32 грн |
| IPT60R080G7XTMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 29A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 9.7A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 490µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 400 V
Description: MOSFET N-CH 600V 29A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 9.7A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 490µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 400 V
на замовлення 5341 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 499.56 грн |
| 10+ | 324.79 грн |
| 100+ | 236.12 грн |
| 500+ | 190.17 грн |
| TLE493DW2B6A0HTSA1 |
![]() |
Виробник: Infineon Technologies
Description: SEN HALL EFFECT I2C PG-TSOP6-6-8
Packaging: Cut Tape (CT)
Features: Programmable
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Resolution: 12 b
Sensing Range: ±160mT ~ ±230mT
Current - Supply (Max): 0.13µA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
Description: SEN HALL EFFECT I2C PG-TSOP6-6-8
Packaging: Cut Tape (CT)
Features: Programmable
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Resolution: 12 b
Sensing Range: ±160mT ~ ±230mT
Current - Supply (Max): 0.13µA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
на замовлення 13188 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 114.74 грн |
| 5+ | 97.72 грн |
| 10+ | 92.98 грн |
| 25+ | 82.05 грн |
| 50+ | 78.48 грн |
| 100+ | 75.20 грн |
| 500+ | 67.50 грн |
| 1000+ | 65.09 грн |
| TLE493DW2B6A1HTSA1 |
![]() |
Виробник: Infineon Technologies
Description: SEN HALL EFFECT I2C PG-TSOP6-6-8
Packaging: Cut Tape (CT)
Features: Programmable
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Resolution: 12 b
Sensing Range: ±160mT ~ ±230mT
Current - Supply (Max): 0.13µA
Supplier Device Package: PG-TSOP6-6-8
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: SEN HALL EFFECT I2C PG-TSOP6-6-8
Packaging: Cut Tape (CT)
Features: Programmable
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Resolution: 12 b
Sensing Range: ±160mT ~ ±230mT
Current - Supply (Max): 0.13µA
Supplier Device Package: PG-TSOP6-6-8
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1440 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 114.74 грн |
| 5+ | 97.72 грн |
| 10+ | 92.98 грн |
| 25+ | 82.05 грн |
| 50+ | 78.48 грн |
| 100+ | 75.20 грн |
| 500+ | 67.50 грн |
| 1000+ | 65.09 грн |
| TLE493DW2B6A2HTSA1 |
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Виробник: Infineon Technologies
Description: SEN HALL EFFECT I2C PG-TSOP6-6-8
Packaging: Cut Tape (CT)
Features: Programmable
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Resolution: 12 b
Sensing Range: ±160mT ~ ±230mT
Current - Supply (Max): 0.13µA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
Description: SEN HALL EFFECT I2C PG-TSOP6-6-8
Packaging: Cut Tape (CT)
Features: Programmable
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Resolution: 12 b
Sensing Range: ±160mT ~ ±230mT
Current - Supply (Max): 0.13µA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
на замовлення 874 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 107.72 грн |
| 5+ | 92.45 грн |
| 10+ | 88.02 грн |
| 25+ | 77.59 грн |
| 50+ | 74.22 грн |
| 100+ | 71.13 грн |
| 500+ | 63.85 грн |
| TLE493DW2B6A3HTSA1 |
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Виробник: Infineon Technologies
Description: SEN HALL EFFECT I2C PG-TSOP6-6-8
Packaging: Cut Tape (CT)
Features: Programmable
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Resolution: 12 b
Sensing Range: ±160mT ~ ±230mT
Current - Supply (Max): 0.13µA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
Description: SEN HALL EFFECT I2C PG-TSOP6-6-8
Packaging: Cut Tape (CT)
Features: Programmable
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Resolution: 12 b
Sensing Range: ±160mT ~ ±230mT
Current - Supply (Max): 0.13µA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1794 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 116.30 грн |
| 5+ | 98.77 грн |
| 10+ | 94.03 грн |
| 25+ | 82.98 грн |
| 50+ | 79.36 грн |
| 100+ | 76.06 грн |
| 500+ | 68.27 грн |
| 1000+ | 65.84 грн |
| TLS202B1MBV50HTSA1 |
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Виробник: Infineon Technologies
Description: IC REG LIN 5V 150MA PG-SCT595-5
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Active
PSRR: 58dB (10kHz)
Voltage Dropout (Max): 0.57V @ 150mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 200 µA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LIN 5V 150MA PG-SCT595-5
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Active
PSRR: 58dB (10kHz)
Voltage Dropout (Max): 0.57V @ 150mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 200 µA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 4770 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 71.03 грн |
| 10+ | 49.16 грн |
| 25+ | 44.38 грн |
| 100+ | 36.72 грн |
| 250+ | 34.36 грн |
| 500+ | 32.95 грн |
| 1000+ | 31.57 грн |
| TLS805D1LDV50XUMA1 |
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Виробник: Infineon Technologies
Description: IC REG LINEAR 5V 50MA PG-TSON-10
Packaging: Cut Tape (CT)
Package / Case: 10-TFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 50mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 11.5 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TSON-10
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Grade: Automotive
PSRR: 55dB (100Hz)
Voltage Dropout (Max): 0.3V @ 50mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 16 µA
Qualification: AEC-Q100
Description: IC REG LINEAR 5V 50MA PG-TSON-10
Packaging: Cut Tape (CT)
Package / Case: 10-TFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 50mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 11.5 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TSON-10
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Grade: Automotive
PSRR: 55dB (100Hz)
Voltage Dropout (Max): 0.3V @ 50mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 16 µA
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| AUIR3241STR |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 36V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8-903
Rise / Fall Time (Typ): 6µs, 6µs
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 350mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC GATE DRVR HIGH-SIDE 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 36V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8-903
Rise / Fall Time (Typ): 6µs, 6µs
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 350mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 4731 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 170.94 грн |
| 10+ | 122.52 грн |
| 25+ | 111.94 грн |
| 100+ | 94.16 грн |
| 250+ | 88.98 грн |
| 500+ | 85.85 грн |
| 1000+ | 81.91 грн |
| AUIRS1170STR |
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Виробник: Infineon Technologies
Description: IC GATE DRIVER 200V 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Voltage - Input: 200V
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 11V ~ 18V
Applications: Secondary-Side Controller
Supplier Device Package: PG-DSO-8-900
Current - Supply: 45 mA
DigiKey Programmable: Not Verified
Description: IC GATE DRIVER 200V 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Voltage - Input: 200V
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 11V ~ 18V
Applications: Secondary-Side Controller
Supplier Device Package: PG-DSO-8-900
Current - Supply: 45 mA
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| BGA5H1BN6E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC RF AMP LTE 2.3GHZ-2.69GHZ
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.69GHz
RF Type: LTE
Voltage - Supply: 1.5V ~ 3.6V
Gain: 18.1dB
Current - Supply: 8.5mA
Noise Figure: 0.7dB
P1dB: -17dBm
Test Frequency: 2.5GHz
Description: IC RF AMP LTE 2.3GHZ-2.69GHZ
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.69GHz
RF Type: LTE
Voltage - Supply: 1.5V ~ 3.6V
Gain: 18.1dB
Current - Supply: 8.5mA
Noise Figure: 0.7dB
P1dB: -17dBm
Test Frequency: 2.5GHz
на замовлення 4040 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 39.03 грн |
| 10+ | 32.10 грн |
| 25+ | 30.25 грн |
| 100+ | 25.97 грн |
| 250+ | 24.52 грн |
| 500+ | 23.50 грн |
| 1000+ | 22.16 грн |
| IAUT200N08S5N023ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 200A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 130µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 200A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 130µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 93.71 грн |
| IAUT240N08S5N019ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 240A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 160µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9264 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 240A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 160µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9264 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 392 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 314.57 грн |
| 10+ | 199.64 грн |
| 100+ | 141.20 грн |
| TLE9104SHXUMA1 |
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Виробник: Infineon Technologies
Description: IC POWERTRAIN SWITCH DSO20-88
Packaging: Cut Tape (CT)
Package / Case: 20-BFSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Type: Powertrain Switch
Supplier Device Package: PG-DSO-20-88
DigiKey Programmable: Not Verified
Features: Slew Rate Controlled, Status Flag
Output Type: N-Channel
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Output Configuration: Low Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 50V ~ 60V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Reverse Battery, Short Circuit
Description: IC POWERTRAIN SWITCH DSO20-88
Packaging: Cut Tape (CT)
Package / Case: 20-BFSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Type: Powertrain Switch
Supplier Device Package: PG-DSO-20-88
DigiKey Programmable: Not Verified
Features: Slew Rate Controlled, Status Flag
Output Type: N-Channel
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Output Configuration: Low Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 50V ~ 60V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Reverse Battery, Short Circuit
на замовлення 1384 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 329.40 грн |
| 10+ | 240.38 грн |
| 25+ | 221.38 грн |
| 100+ | 188.11 грн |
| 250+ | 178.74 грн |
| 500+ | 173.10 грн |
| TLS850B0TBV50ATMA1 |
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Виробник: Infineon Technologies
Description: IC REG LIN 5V 500MA PG-TO263-5-1
Packaging: Cut Tape (CT)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 25 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-5-1
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 33 µA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LIN 5V 500MA PG-TO263-5-1
Packaging: Cut Tape (CT)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 25 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-5-1
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 33 µA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3258 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 151.43 грн |
| 10+ | 107.94 грн |
| 25+ | 98.50 грн |
| 100+ | 82.68 грн |
| 250+ | 78.03 грн |
| 500+ | 75.23 грн |
| IAUT200N08S5N023ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 200A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 130µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 200A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 130µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6401 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 273.20 грн |
| 10+ | 173.26 грн |
| 100+ | 122.03 грн |
| 500+ | 103.65 грн |
| IAUT165N08S5N029ATMA2 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 165A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 165A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6370 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 165A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 165A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6370 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3959 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 247.44 грн |
| 10+ | 156.27 грн |
| 100+ | 109.41 грн |
| 500+ | 90.67 грн |
| IAUT300N10S5N015ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 300A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16011 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 300A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16011 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7783 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 408.24 грн |
| 10+ | 263.16 грн |
| 100+ | 189.76 грн |
| 500+ | 176.29 грн |
| IAUT260N10S5N019ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 260A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 210µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11830 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 260A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 210µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11830 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1489 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 366.87 грн |
| 10+ | 235.42 грн |
| 100+ | 168.59 грн |
| 500+ | 152.88 грн |
| IAUT150N10S5N035ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 150A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 75A, 10V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 110µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6110 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 150A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 75A, 10V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 110µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6110 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2683 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 257.59 грн |
| 10+ | 162.21 грн |
| 100+ | 113.72 грн |
| 500+ | 94.76 грн |
| AUXMIGP4063D |
Виробник: Infineon Technologies
Description: IGBT 600V TO-247 COPAK
Packaging: Tube
Part Status: Obsolete
Description: IGBT 600V TO-247 COPAK
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| MB2198-503-E |
Виробник: Infineon Technologies
Description: TOOL KIT
Packaging: Bulk
Supplied Contents: Board(s)
Part Status: Obsolete
Description: TOOL KIT
Packaging: Bulk
Supplied Contents: Board(s)
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| MB2198-508-E |
![]() |
Виробник: Infineon Technologies
Description: TOOL KIT
Packaging: Bulk
Supplied Contents: Board(s)
Part Status: Obsolete
Description: TOOL KIT
Packaging: Bulk
Supplied Contents: Board(s)
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| AUIRG4PH50S-205 |
Виробник: Infineon Technologies
Description: IGBT 1200V 141A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 33A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: -/616ns
Switching Energy: 16mJ (off)
Test Condition: 600V, 33A, 5Ohm, 15V
Gate Charge: 227 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 141 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 99 A
Power - Max: 543 W
Description: IGBT 1200V 141A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 33A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: -/616ns
Switching Energy: 16mJ (off)
Test Condition: 600V, 33A, 5Ohm, 15V
Gate Charge: 227 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 141 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 99 A
Power - Max: 543 W
товару немає в наявності
В кошику
од. на суму грн.
| IKB40N65EF5ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 74A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 83 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/160ns
Switching Energy: 420µJ (on), 100µJ (off)
Test Condition: 400V, 40A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 250 W
Description: IGBT TRENCH FS 650V 74A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 83 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/160ns
Switching Energy: 420µJ (on), 100µJ (off)
Test Condition: 400V, 40A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 250 W
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 126.17 грн |
| IKB40N65EH5ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 74A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 78 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/157ns
Switching Energy: 1.1mJ (on), 400µJ (off)
Test Condition: 400V, 40A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 250 W
Description: IGBT TRENCH FS 650V 74A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 78 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/157ns
Switching Energy: 1.1mJ (on), 400µJ (off)
Test Condition: 400V, 40A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 250 W
товару немає в наявності
В кошику
од. на суму грн.
| IKB40N65ES5ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 79A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 73 ns
Vce(on) (Max) @ Vge, Ic: 1.74V @ 15V, 40A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/130ns
Switching Energy: 860µJ (on), 400µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 79 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 230 W
Description: IGBT TRENCH FS 650V 79A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 73 ns
Vce(on) (Max) @ Vge, Ic: 1.74V @ 15V, 40A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/130ns
Switching Energy: 860µJ (on), 400µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 79 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 230 W
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 124.60 грн |
| 2000+ | 112.90 грн |
| IGB50N65S5ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/139ns
Switching Energy: 1.23mJ (on), 740µJ (off)
Test Condition: 400V, 50A, 8.2Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 270 W
Description: IGBT TRENCH FS 650V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/139ns
Switching Energy: 1.23mJ (on), 740µJ (off)
Test Condition: 400V, 50A, 8.2Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 270 W
на замовлення 3995 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 245.10 грн |
| 10+ | 154.16 грн |
| 100+ | 107.45 грн |
| 500+ | 82.51 грн |
| IGB50N65H5ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/173ns
Switching Energy: 1.59mJ (on), 750µJ (off)
Test Condition: 400V, 50A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 270 W
Description: IGBT TRENCH FS 650V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/173ns
Switching Energy: 1.59mJ (on), 750µJ (off)
Test Condition: 400V, 50A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 270 W
на замовлення 2429 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 245.10 грн |
| 10+ | 154.16 грн |
| 100+ | 107.45 грн |
| 500+ | 82.51 грн |




























