Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (123014) > Сторінка 342 з 2051
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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SABC161SLM3VAABXUMA1 | Infineon Technologies |
Description: LEGACY 16-BIT MCUDigiKey Programmable: Not Verified Number of I/O: 63 Part Status: Active Supplier Device Package: PG-MQFP-80-7 Peripherals: POR, PWM, WDT Connectivity: EBI/EMI, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V Core Size: 16-Bit Core Processor: C166 Program Memory Type: ROMless Oscillator Type: External, Internal Operating Temperature: 0°C ~ 70°C (TA) RAM Size: 2K x 8 Speed: 20MHz Mounting Type: Surface Mount Package / Case: 80-QFP Packaging: Bulk |
на замовлення 662 шт: термін постачання 21-31 дні (днів) |
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| BSC100N03MSG | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BSC100N03LSG | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 44A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| IPC60R160C6X1SA1 | Infineon Technologies | Description: MOSFET N-CH BARE DIE |
товару немає в наявності |
Мінімальне замовлення: 6584 шт В кошику од. на суму грн. | |||||||||||||||
| IPC60R160C6UNSAWNX6SA1 | Infineon Technologies | Description: MOSFET N-CH BARE DIE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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KITA2GTC3875VTFTTOBO1 | Infineon Technologies |
Description: AURIX TC387 5V TFT EVAL BRDPlatform: AURIX TC387 5V TFT Core Processor: TriCore™ Contents: Board(s), LCD Mounting Type: Fixed Part Status: Active Supplied Contents: Board(s) Utilized IC / Part: TC387 Type: MCU 32-Bit Function: USB to UART (RS232) Bridge Packaging: Bulk |
на замовлення 36 шт: термін постачання 21-31 дні (днів) |
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BSP60 | Infineon Technologies |
Description: TRANS PNP DARL 45V 1A SOT2234-21Packaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V Frequency - Transition: 200MHz Supplier Device Package: PG-SOT223-4-21 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 1.5 W |
на замовлення 31070 шт: термін постачання 21-31 дні (днів) |
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BSP60E6327 | Infineon Technologies |
Description: TRANS PNP DARL 45V 1A SOT223-4Power - Max: 1.5 W Voltage - Collector Emitter Breakdown (Max): 45 V Current - Collector (Ic) (Max): 1 A Supplier Device Package: PG-SOT223-4-21 Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V Current - Collector Cutoff (Max): 10µA Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: PNP - Darlington Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Bulk |
на замовлення 28791 шт: термін постачання 21-31 дні (днів) |
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BSP603S2LNT | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PG-SOT223-4-21 Vgs(th) (Max) @ Id: 2V @ 50µA Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 33mOhm @ 2.6A, 10V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Bulk |
на замовлення 29683 шт: термін постачання 21-31 дні (днів) |
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BSP60H6327XTSA1 | Infineon Technologies |
Description: TRANS PNP DARL 45V 1A SOT223-4Packaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V Frequency - Transition: 200MHz Supplier Device Package: PG-SOT223-4 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 1.5 W |
на замовлення 7000 шт: термін постачання 21-31 дні (днів) |
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BSP 60 E6433 | Infineon Technologies |
Description: TRANS PNP DARL 45V 1A SOT223-4Transistor Type: PNP - Darlington Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) Power - Max: 1.5 W Voltage - Collector Emitter Breakdown (Max): 45 V Current - Collector (Ic) (Max): 1 A Supplier Device Package: PG-SOT223-4 Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V Current - Collector Cutoff (Max): 10µA Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A Operating Temperature: 150°C (TJ) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSP61E6327HTSA1 | Infineon Technologies |
Description: TRANS PNP DARL 60V 1A SOT223-4Power - Max: 1.5 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 1 A Part Status: Obsolete Supplier Device Package: PG-SOT223-4 Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V Current - Collector Cutoff (Max): 10µA Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: PNP - Darlington Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Bulk |
на замовлення 43880 шт: термін постачання 21-31 дні (днів) |
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BSP61E6327 | Infineon Technologies |
Description: SMALL SIGNAL BIPOLAR TRANSISTORPart Status: Active Supplier Device Package: PG-SOT223 Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V Current - Collector Cutoff (Max): 10µA Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A Operating Temperature: 150°C (TJ) Power - Max: 1.5 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 1 A Transistor Type: PNP - Darlington Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Bulk |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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| BFR 360L3E6765 | Infineon Technologies |
Description: LOW-NOISE TRANSISTORPart Status: Active Supplier Device Package: PG-TSLP-3-1 Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz Frequency - Transition: 14GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V Voltage - Collector Emitter Breakdown (Max): 6V Current - Collector (Ic) (Max): 35mA Power - Max: 210mW Gain: 16dB Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Packaging: Bulk |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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BFR360L3E6765 | Infineon Technologies |
Description: LOW-NOISE SI TRANSISTORPart Status: Active Supplier Device Package: PG-TSLP-3-1 Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz Frequency - Transition: 14GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V Voltage - Collector Emitter Breakdown (Max): 9V Current - Collector (Ic) (Max): 35mA Power - Max: 210mW Gain: 11.5dB ~ 16dB Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Packaging: Bulk |
на замовлення 41726 шт: термін постачання 21-31 дні (днів) |
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| TC336LP32F200SAAKXUMA1 | Infineon Technologies |
Description: AURIX 2G |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||||||||||
| IRLML6402TRPBF-1 | Infineon Technologies |
Description: MOSFET P-CH 20V 3.7A SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 3.7A, 4.5V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: Micro3™/SOT-23 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 633 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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6MS24017E33W31361NOSA1 | Infineon Technologies | Description: IGBT MODULE 1700V A-MS3-1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| BAT18-05E6327 | Infineon Technologies |
Description: PIN DIODE, 35V V(BR)Current - Max: 100 mA Part Status: Active Supplier Device Package: PG-SOT23 Voltage - Peak Reverse (Max): 35V Resistance @ If, F: 700mOhm @ 5mA, 200MHz Capacitance @ Vr, F: 1pF @ 20V, 1MHz Operating Temperature: 150°C (TJ) Diode Type: PIN - 1 Pair Common Cathode Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BAT1805E6327HTSA1 | Infineon Technologies |
Description: RF DIODE 35V PG-SOT23Current - Max: 100 mA Part Status: Active Supplier Device Package: PG-SOT23 Voltage - Peak Reverse (Max): 35V Resistance @ If, F: 700mOhm @ 5mA, 200MHz Capacitance @ Vr, F: 1pF @ 20V, 1MHz Operating Temperature: 150°C (TJ) Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk |
на замовлення 47248 шт: термін постачання 21-31 дні (днів) |
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| BAT1805E6327 | Infineon Technologies |
Description: PIN DIODE, 35V V(BR)Current - Reverse Leakage @ Vr: 20 nA @ 20 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 35 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: PG-SOT23 Current - Average Rectified (Io) (per Diode): 100mA (DC) Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 120 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IPZ60R037P7XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 76A TO247-4 Power Dissipation (Max): 255W (Tc) Rds On (Max) @ Id, Vgs: 37mOhm @ 29.5A, 10V Current - Continuous Drain (Id) @ 25°C: 76A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 5243 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: PG-TO247-4 Vgs(th) (Max) @ Id: 4V @ 1.48mA |
на замовлення 938 шт: термін постачання 21-31 дні (днів) |
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IPZ60R041P6FKSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 77.5A TO247-4Part Status: Obsolete Supplier Device Package: PG-TO247-4 Vgs(th) (Max) @ Id: 4.5V @ 2.96mA Power Dissipation (Max): 481W (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 35.5A, 10V Current - Continuous Drain (Id) @ 25°C: 77.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V |
на замовлення 13435 шт: термін постачання 21-31 дні (днів) |
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CY7C1412AV18-200BZC | Infineon Technologies |
Description: IC SRAM 36MBIT PARALLEL 165FBGAPackaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 36Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II Clock Frequency: 200 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (15x17) Memory Interface: Parallel Memory Organization: 2M x 18 DigiKey Programmable: Not Verified |
на замовлення 717 шт: термін постачання 21-31 дні (днів) |
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CY7C1415BV18-200BZXC | Infineon Technologies |
Description: IC SRAM 36MBIT PARALLEL 165FBGAPackaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 36Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II Clock Frequency: 200 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (15x17) Memory Interface: Parallel Memory Organization: 1M x 36 DigiKey Programmable: Not Verified |
на замовлення 467 шт: термін постачання 21-31 дні (днів) |
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CY7C1412BV18-167BZC | Infineon Technologies |
Description: IC SRAM 36MBIT PAR 165FBGAMemory Format: SRAM Clock Frequency: 167 MHz Technology: SRAM - Synchronous, QDR II Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: 0°C ~ 70°C (TA) Memory Type: Volatile Memory Size: 36Mbit Mounting Type: Surface Mount Package / Case: 165-LBGA Packaging: Tray DigiKey Programmable: Not Verified Memory Organization: 2M x 18 Memory Interface: Parallel Supplier Device Package: 165-FBGA (15x17) |
на замовлення 273 шт: термін постачання 21-31 дні (днів) |
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| DT430N22KOFHPSA1 | Infineon Technologies |
Description: SCR MODULE PB60-1 Packaging: Tray Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| IPP042N03L G | Infineon Technologies |
Description: N-CHANNEL POWER MOSFET |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 553 шт В кошику од. на суму грн. | |||||||||||||||
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TLE4276DVNTMA1 | Infineon Technologies |
Description: IC REG LINEAR ADJ LDO REGULATORCurrent - Supply (Max): 25 mA Protection Features: Antisaturation, Over Temperature, Reverse Polarity, Short Circuit Voltage Dropout (Max): 0.5V @ 250mA PSRR: 54dB (100Hz) Part Status: Active Control Features: Inhibit Voltage - Output (Min/Fixed): 2.5V Voltage - Output (Max): 20V Supplier Device Package: PG-TO263-5-1 Number of Regulators: 1 Voltage - Input (Max): 40V Current - Quiescent (Iq): 220 µA Output Configuration: Positive Operating Temperature: -40°C ~ 150°C (TJ) Current - Output: 400mA Mounting Type: Surface Mount Output Type: Adjustable Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRFI4905 | Infineon Technologies |
Description: MOSFET P-CH 55V 41A TO220AB FPInput Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220AB Full-Pak Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 22A, 10V Current - Continuous Drain (Id) @ 25°C: 41A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||||||||||
| IRFC4905B | Infineon Technologies |
Description: MOSFET 55V 42A DIE Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: Die Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V Current - Continuous Drain (Id) @ 25°C: 42A Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55 V Mounting Type: Surface Mount Package / Case: Die Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IR3889MTRPBFAUMA1 | Infineon Technologies |
Description: IC REG BUCK ADJ 30A IQFN-36Part Status: Active Voltage - Output (Min/Fixed): 0.8V Voltage - Input (Min): 2V Voltage - Output (Max): 17V Synchronous Rectifier: Yes Supplier Device Package: PG-IQFN-36-2 Topology: Buck Voltage - Input (Max): 17V Frequency - Switching: 600kHz ~ 2MHz Output Configuration: Positive Operating Temperature: -40°C ~ 150°C (TJ) Current - Output: 30A Function: Step-Down Number of Outputs: 1 Mounting Type: Surface Mount Output Type: Adjustable Package / Case: 36-PowerVFQFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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IR3889MTRPBFAUMA1 | Infineon Technologies |
Description: IC REG BUCK ADJ 30A IQFN-36Part Status: Active Voltage - Output (Min/Fixed): 0.8V Voltage - Input (Min): 2V Voltage - Output (Max): 17V Synchronous Rectifier: Yes Supplier Device Package: PG-IQFN-36-2 Topology: Buck Voltage - Input (Max): 17V Frequency - Switching: 600kHz ~ 2MHz Output Configuration: Positive Operating Temperature: -40°C ~ 150°C (TJ) Current - Output: 30A Function: Step-Down Number of Outputs: 1 Mounting Type: Surface Mount Output Type: Adjustable Package / Case: 36-PowerVFQFN Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPN80R2K0P7ATMA1 | Infineon Technologies |
Description: MOSFET N-CHANNEL 800V 3A SOT223Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 940mA, 10V Power Dissipation (Max): 6.4W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: PG-SOT223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 500 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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IPN80R2K0P7ATMA1 | Infineon Technologies |
Description: MOSFET N-CHANNEL 800V 3A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 940mA, 10V Power Dissipation (Max): 6.4W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: PG-SOT223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 500 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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BGA612H6327 | Infineon Technologies |
Description: IC AMP 802.15 500MHZ-6GHZ SOT343Part Status: Active Supplier Device Package: PG-SOT343-4 Test Frequency: 1.575GHz P1dB: -16.5dBm Noise Figure: 1dB Current - Supply: 10mA Gain: 15dB Voltage - Supply: 2.75V RF Type: 802.15/Bluetooth, ISM, WLAN, GSM, GPS, DCS, UMTS Frequency: 500MHz ~ 6GHz Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2EDL05I06PFXUMA1 | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE DSO8Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: PG-DSO-8 Rise / Fall Time (Typ): 48ns, 24ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT Logic Voltage - VIL, VIH: 1.1V, 1.7V Current - Peak Output (Source, Sink): 500mA, 500mA Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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2EDL05I06PFXUMA1 | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE DSO8Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: PG-DSO-8 Rise / Fall Time (Typ): 48ns, 24ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT Logic Voltage - VIL, VIH: 1.1V, 1.7V Current - Peak Output (Source, Sink): 500mA, 500mA Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 2979 шт: термін постачання 21-31 дні (днів) |
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SAF-C505CA-LMCA | Infineon Technologies |
Description: IC MCU 8BIT ROMLESS 44MQFPPackaging: Bulk Package / Case: 44-QFP Mounting Type: Surface Mount Speed: 20MHz RAM Size: 1.25K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: ROMless Core Processor: C500 Data Converters: A/D 8x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V Connectivity: CANbus, EBI/EMI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: PG-MQFP-44-2 Part Status: Active Number of I/O: 34 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SAFC505CALMCA | Infineon Technologies |
Description: IC MCU 8BIT ROMLESS 44MQFPPackage / Case: 44-QFP Packaging: Bulk Number of I/O: 34 Part Status: Active Supplier Device Package: PG-MQFP-44-2 Peripherals: POR, PWM, WDT Connectivity: CANbus, EBI/EMI, UART/USART Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V Core Size: 8-Bit Data Converters: A/D 8x10b Core Processor: C500 Program Memory Type: ROMless Oscillator Type: External Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 1.25K x 8 Speed: 20MHz Mounting Type: Surface Mount |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TC264D40F200NBCKXUMA2 | Infineon Technologies |
Description: IC MCU 32BIT 2.5MB FLASH 144LQFPDigiKey Programmable: Not Verified Number of I/O: 88 Part Status: Active Supplier Device Package: PG-LQFP-144-22 Peripherals: DMA, WDT Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT Voltage - Supply (Vcc/Vdd): 3.3V, 5V Core Size: 32-Bit Dual-Core Data Converters: A/D 48x12b SAR, 3 x Sigma-Delta Core Processor: TriCore™ EEPROM Size: 96K x 8 Program Memory Type: FLASH Oscillator Type: External Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 240K x 8 Program Memory Size: 2.5MB (2.5M x 8) Speed: 200MHz Mounting Type: Surface Mount Package / Case: 144-LQFP Exposed Pad Packaging: Tape & Reel (TR) |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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TC264D40F200NBCKXUMA2 | Infineon Technologies |
Description: IC MCU 32BIT 2.5MB FLASH 144LQFPDigiKey Programmable: Not Verified Number of I/O: 88 Part Status: Active Supplier Device Package: PG-LQFP-144-22 Peripherals: DMA, WDT Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT Voltage - Supply (Vcc/Vdd): 3.3V, 5V Core Size: 32-Bit Dual-Core Data Converters: A/D 48x12b SAR, 3 x Sigma-Delta Core Processor: TriCore™ EEPROM Size: 96K x 8 Program Memory Type: FLASH Oscillator Type: External Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 240K x 8 Program Memory Size: 2.5MB (2.5M x 8) Speed: 200MHz Mounting Type: Surface Mount Package / Case: 144-LQFP Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 1692 шт: термін постачання 21-31 дні (днів) |
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ITS436L2SHKSA1 | Infineon Technologies |
Description: BUFFER/INVERTER PERIPHL DRIVER |
на замовлення 3879 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 138 шт В кошику од. на суму грн. | ||||||||||||||
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BTS430K2E3122A | Infineon Technologies |
Description: BUFFER/INVERTER PERIPHL DRIVERCurrent - Output (Max): 36A Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 4.5V ~ 32V Input Type: Non-Inverting Rds On (Typ): 30mOhm Output Configuration: High Side Operating Temperature: -40°C ~ 150°C (TJ) Switch Type: General Purpose Interface: On/Off Number of Outputs: 1 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA Features: Auto Restart, Slew Rate Controlled Packaging: Bulk Part Status: Active Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage Supplier Device Package: P-TO220-5-122 Ratio - Input:Output: 1:1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BTS436L2GNTMA1 | Infineon Technologies |
Description: BUFFER/INVERTER PERIPHL DRIVERPart Status: Active Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Load, Over Temperature, Over Voltage, Short Circuit, UVLO Supplier Device Package: PG-TO263-5-2 Ratio - Input:Output: 1:1 Current - Output (Max): 9.8A Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 4.75V ~ 41V Input Type: Non-Inverting Rds On (Typ): 35mOhm Output Configuration: High Side Operating Temperature: -40°C ~ 150°C (TJ) Switch Type: General Purpose Interface: On/Off Number of Outputs: 1 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB Features: Slew Rate Controlled Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BFR182E-6327 | Infineon Technologies |
Description: RF N-CHANNEL MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2EDF9275FXUMA1 | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 16SOICPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 650 V Supplier Device Package: PG-DSO-16-11 Rise / Fall Time (Typ): 6.5ns, 4.5ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, SiC MOSFET Logic Voltage - VIL, VIH: -, 1.65V Current - Peak Output (Source, Sink): 4A, 8A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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2EDF9275FXUMA1 | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 16SOICPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 650 V Supplier Device Package: PG-DSO-16-11 Rise / Fall Time (Typ): 6.5ns, 4.5ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, SiC MOSFET Logic Voltage - VIL, VIH: -, 1.65V Current - Peak Output (Source, Sink): 4A, 8A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 3090 шт: термін постачання 21-31 дні (днів) |
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FS200R12PT4BOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 280A 1000W MODPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 280 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1000 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 14 nF @ 25 V |
на замовлення 27 шт: термін постачання 21-31 дні (днів) |
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BTS611L1E3128ANTMA1 | Infineon Technologies |
Description: 2 CH HIGH-SIDE POWER SWITCHPart Status: Active Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Short Circuit, UVLO Supplier Device Package: P-TO263-7-2 Ratio - Input:Output: 1:1 Current - Output (Max): 4.4A Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 5V ~ 34V Input Type: Non-Inverting Rds On (Typ): 160mOhm Output Configuration: High Side Operating Temperature: -40°C ~ 150°C (TJ) Switch Type: General Purpose Interface: Logic Number of Outputs: 2 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Features: Auto Restart, Slew Rate Controlled Packaging: Bulk |
на замовлення 71296 шт: термін постачання 21-31 дні (днів) |
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BSC0910NDIATMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 25V 11A/31A TISON8Part Status: Active Supplier Device Package: PG-TISON-8 Vgs(th) (Max) @ Id: 2V @ 250µA FET Feature: Logic Level Gate, 4.5V Drive Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 12V Current - Continuous Drain (Id) @ 25°C: 11A, 31A Drain to Source Voltage (Vdss): 25V Power - Max: 1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Asymmetrical Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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BSC0910NDIATMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 25V 11A/31A TISON8Part Status: Active Supplier Device Package: PG-TISON-8 Vgs(th) (Max) @ Id: 2V @ 250µA FET Feature: Logic Level Gate, 4.5V Drive Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 12V Current - Continuous Drain (Id) @ 25°C: 11A, 31A Drain to Source Voltage (Vdss): 25V Power - Max: 1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Asymmetrical Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 10182 шт: термін постачання 21-31 дні (днів) |
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BSP372NH6327XTSA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 1.8A SOT223-4Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Rds On (Max) @ Id, Vgs: 230mOhm @ 1.8A, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 1.8V @ 218µA Supplier Device Package: PG-SOT223-4 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 329 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 65000 шт: термін постачання 21-31 дні (днів) |
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BCR196WH6327XTSA1 | Infineon Technologies |
Description: TRANS PREBIAS PNP 50V SOT323Resistors Included: R1 and R2 Supplier Device Package: PG-SOT323 DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Bulk Resistor - Emitter Base (R2): 22 kOhms Resistor - Base (R1): 47 kOhms Frequency - Transition: 150 MHz Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 70 mA |
на замовлення 489000 шт: термін постачання 21-31 дні (днів) |
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BCR196E6327HTSA1 | Infineon Technologies |
Description: TRANS PREBIAS PNP 50V SOT23Resistors Included: R1 and R2 Resistor - Emitter Base (R2): 22 kOhms Resistor - Base (R1): 47 kOhms Frequency - Transition: 150 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 70 mA Supplier Device Package: PG-SOT23 DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk |
на замовлення 156000 шт: термін постачання 21-31 дні (днів) |
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BB831E7904HTSA1 | Infineon Technologies |
Description: DIODE VAR CAP 30V 20MA SOD-323Packaging: Bulk Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Diode Type: Single Operating Temperature: -55°C ~ 125°C (TJ) Capacitance @ Vr, F: 1.2pF @ 28V, 1MHz Capacitance Ratio Condition: C1/C28 Supplier Device Package: PG-SOD323-3D Part Status: Obsolete Voltage - Peak Reverse (Max): 30 V Capacitance Ratio: 9.5 |
на замовлення 92500 шт: термін постачання 21-31 дні (днів) |
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BB831E7904 | Infineon Technologies |
Description: VARIABLE CAPACITANCE DIODEPackaging: Bulk Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Diode Type: Single Operating Temperature: -55°C ~ 125°C (TJ) Capacitance @ Vr, F: 1.2pF @ 28V, 1MHz Capacitance Ratio Condition: C1/C28 Supplier Device Package: PG-SOD323-2 Part Status: Active Voltage - Peak Reverse (Max): 30 V Capacitance Ratio: 9.5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BTS730CT | Infineon Technologies |
Description: FLUORESCENT LIGHT CONTROLLER |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| BTS730NT | Infineon Technologies | Description: IC PWR PWM N-CH 1:1 DSO-20 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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XMC1404F064X0200AAXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 200KB FLASH 64LQFPPackaging: Tape & Reel (TR) Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 200KB (200K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 12x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: CANbus, I2C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, I2S, LED, POR, PWM, WDT Supplier Device Package: PG-LQFP-64-26 Part Status: Active Number of I/O: 48 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1900 шт В кошику од. на суму грн. |
| SABC161SLM3VAABXUMA1 |
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Виробник: Infineon Technologies
Description: LEGACY 16-BIT MCU
DigiKey Programmable: Not Verified
Number of I/O: 63
Part Status: Active
Supplier Device Package: PG-MQFP-80-7
Peripherals: POR, PWM, WDT
Connectivity: EBI/EMI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Core Size: 16-Bit
Core Processor: C166
Program Memory Type: ROMless
Oscillator Type: External, Internal
Operating Temperature: 0°C ~ 70°C (TA)
RAM Size: 2K x 8
Speed: 20MHz
Mounting Type: Surface Mount
Package / Case: 80-QFP
Packaging: Bulk
Description: LEGACY 16-BIT MCU
DigiKey Programmable: Not Verified
Number of I/O: 63
Part Status: Active
Supplier Device Package: PG-MQFP-80-7
Peripherals: POR, PWM, WDT
Connectivity: EBI/EMI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Core Size: 16-Bit
Core Processor: C166
Program Memory Type: ROMless
Oscillator Type: External, Internal
Operating Temperature: 0°C ~ 70°C (TA)
RAM Size: 2K x 8
Speed: 20MHz
Mounting Type: Surface Mount
Package / Case: 80-QFP
Packaging: Bulk
на замовлення 662 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 349.86 грн |
| BSC100N03MSG |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| BSC100N03LSG |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| IPC60R160C6X1SA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH BARE DIE
Description: MOSFET N-CH BARE DIE
товару немає в наявності
Мінімальне замовлення: 6584 шт
В кошику
од. на суму грн.
| IPC60R160C6UNSAWNX6SA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH BARE DIE
Description: MOSFET N-CH BARE DIE
товару немає в наявності
В кошику
од. на суму грн.
| KITA2GTC3875VTFTTOBO1 |
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Виробник: Infineon Technologies
Description: AURIX TC387 5V TFT EVAL BRD
Platform: AURIX TC387 5V TFT
Core Processor: TriCore™
Contents: Board(s), LCD
Mounting Type: Fixed
Part Status: Active
Supplied Contents: Board(s)
Utilized IC / Part: TC387
Type: MCU 32-Bit
Function: USB to UART (RS232) Bridge
Packaging: Bulk
Description: AURIX TC387 5V TFT EVAL BRD
Platform: AURIX TC387 5V TFT
Core Processor: TriCore™
Contents: Board(s), LCD
Mounting Type: Fixed
Part Status: Active
Supplied Contents: Board(s)
Utilized IC / Part: TC387
Type: MCU 32-Bit
Function: USB to UART (RS232) Bridge
Packaging: Bulk
на замовлення 36 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 19910.48 грн |
| BSP60 |
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Виробник: Infineon Technologies
Description: TRANS PNP DARL 45V 1A SOT2234-21
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4-21
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.5 W
Description: TRANS PNP DARL 45V 1A SOT2234-21
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4-21
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.5 W
на замовлення 31070 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1416+ | 13.94 грн |
| BSP60E6327 |
![]() |
Виробник: Infineon Technologies
Description: TRANS PNP DARL 45V 1A SOT223-4
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: PG-SOT223-4-21
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Bulk
Description: TRANS PNP DARL 45V 1A SOT223-4
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: PG-SOT223-4-21
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Bulk
на замовлення 28791 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1416+ | 13.94 грн |
| BSP603S2LNT |
![]() |
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-SOT223-4-21
Vgs(th) (Max) @ Id: 2V @ 50µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Bulk
Description: N-CHANNEL POWER MOSFET
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-SOT223-4-21
Vgs(th) (Max) @ Id: 2V @ 50µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Bulk
на замовлення 29683 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 852+ | 23.27 грн |
| BSP60H6327XTSA1 |
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Виробник: Infineon Technologies
Description: TRANS PNP DARL 45V 1A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.5 W
Description: TRANS PNP DARL 45V 1A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.5 W
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1575+ | 12.61 грн |
| BSP 60 E6433 |
![]() |
Виробник: Infineon Technologies
Description: TRANS PNP DARL 45V 1A SOT223-4
Transistor Type: PNP - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: PG-SOT223-4
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Operating Temperature: 150°C (TJ)
Description: TRANS PNP DARL 45V 1A SOT223-4
Transistor Type: PNP - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: PG-SOT223-4
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Operating Temperature: 150°C (TJ)
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В кошику
од. на суму грн.
| BSP61E6327HTSA1 |
![]() |
Виробник: Infineon Technologies
Description: TRANS PNP DARL 60V 1A SOT223-4
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: PG-SOT223-4
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Bulk
Description: TRANS PNP DARL 60V 1A SOT223-4
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: PG-SOT223-4
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Bulk
на замовлення 43880 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1090+ | 18.59 грн |
| BSP61E6327 |
![]() |
Виробник: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Part Status: Active
Supplier Device Package: PG-SOT223
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Operating Temperature: 150°C (TJ)
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 1 A
Transistor Type: PNP - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Bulk
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Part Status: Active
Supplier Device Package: PG-SOT223
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Operating Temperature: 150°C (TJ)
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 1 A
Transistor Type: PNP - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Bulk
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1598+ | 13.96 грн |
| BFR 360L3E6765 |
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Виробник: Infineon Technologies
Description: LOW-NOISE TRANSISTOR
Part Status: Active
Supplier Device Package: PG-TSLP-3-1
Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz
Frequency - Transition: 14GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
Voltage - Collector Emitter Breakdown (Max): 6V
Current - Collector (Ic) (Max): 35mA
Power - Max: 210mW
Gain: 16dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Bulk
Description: LOW-NOISE TRANSISTOR
Part Status: Active
Supplier Device Package: PG-TSLP-3-1
Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz
Frequency - Transition: 14GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
Voltage - Collector Emitter Breakdown (Max): 6V
Current - Collector (Ic) (Max): 35mA
Power - Max: 210mW
Gain: 16dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Bulk
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3073+ | 7.75 грн |
| BFR360L3E6765 |
![]() |
Виробник: Infineon Technologies
Description: LOW-NOISE SI TRANSISTOR
Part Status: Active
Supplier Device Package: PG-TSLP-3-1
Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz
Frequency - Transition: 14GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
Voltage - Collector Emitter Breakdown (Max): 9V
Current - Collector (Ic) (Max): 35mA
Power - Max: 210mW
Gain: 11.5dB ~ 16dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Bulk
Description: LOW-NOISE SI TRANSISTOR
Part Status: Active
Supplier Device Package: PG-TSLP-3-1
Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz
Frequency - Transition: 14GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
Voltage - Collector Emitter Breakdown (Max): 9V
Current - Collector (Ic) (Max): 35mA
Power - Max: 210mW
Gain: 11.5dB ~ 16dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Bulk
на замовлення 41726 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3073+ | 7.75 грн |
| TC336LP32F200SAAKXUMA1 |
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Виробник: Infineon Technologies
Description: AURIX 2G
Description: AURIX 2G
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| IRLML6402TRPBF-1 |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 3.7A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.7A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 633 pF @ 10 V
Description: MOSFET P-CH 20V 3.7A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.7A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 633 pF @ 10 V
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од. на суму грн.
| 6MS24017E33W31361NOSA1 |
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V A-MS3-1
Description: IGBT MODULE 1700V A-MS3-1
товару немає в наявності
В кошику
од. на суму грн.
| BAT18-05E6327 |
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Виробник: Infineon Technologies
Description: PIN DIODE, 35V V(BR)
Current - Max: 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23
Voltage - Peak Reverse (Max): 35V
Resistance @ If, F: 700mOhm @ 5mA, 200MHz
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - 1 Pair Common Cathode
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Description: PIN DIODE, 35V V(BR)
Current - Max: 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23
Voltage - Peak Reverse (Max): 35V
Resistance @ If, F: 700mOhm @ 5mA, 200MHz
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - 1 Pair Common Cathode
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| BAT1805E6327HTSA1 |
![]() |
Виробник: Infineon Technologies
Description: RF DIODE 35V PG-SOT23
Current - Max: 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23
Voltage - Peak Reverse (Max): 35V
Resistance @ If, F: 700mOhm @ 5mA, 200MHz
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Operating Temperature: 150°C (TJ)
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Description: RF DIODE 35V PG-SOT23
Current - Max: 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23
Voltage - Peak Reverse (Max): 35V
Resistance @ If, F: 700mOhm @ 5mA, 200MHz
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Operating Temperature: 150°C (TJ)
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
на замовлення 47248 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1181+ | 16.73 грн |
| BAT1805E6327 |
![]() |
Виробник: Infineon Technologies
Description: PIN DIODE, 35V V(BR)
Current - Reverse Leakage @ Vr: 20 nA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 120 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Description: PIN DIODE, 35V V(BR)
Current - Reverse Leakage @ Vr: 20 nA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 120 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| IPZ60R037P7XKSA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 76A TO247-4
Power Dissipation (Max): 255W (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 29.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5243 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO247-4
Vgs(th) (Max) @ Id: 4V @ 1.48mA
Description: MOSFET N-CH 650V 76A TO247-4
Power Dissipation (Max): 255W (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 29.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5243 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO247-4
Vgs(th) (Max) @ Id: 4V @ 1.48mA
на замовлення 938 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 53+ | 422.09 грн |
| IPZ60R041P6FKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 77.5A TO247-4
Part Status: Obsolete
Supplier Device Package: PG-TO247-4
Vgs(th) (Max) @ Id: 4.5V @ 2.96mA
Power Dissipation (Max): 481W (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 35.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 77.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Description: MOSFET N-CH 600V 77.5A TO247-4
Part Status: Obsolete
Supplier Device Package: PG-TO247-4
Vgs(th) (Max) @ Id: 4.5V @ 2.96mA
Power Dissipation (Max): 481W (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 35.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 77.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
на замовлення 13435 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 45+ | 485.59 грн |
| CY7C1412AV18-200BZC |
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Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
на замовлення 717 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 3209.23 грн |
| CY7C1415BV18-200BZXC |
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Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
на замовлення 467 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 3209.23 грн |
| CY7C1412BV18-167BZC |
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Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Memory Format: SRAM
Clock Frequency: 167 MHz
Technology: SRAM - Synchronous, QDR II
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 36Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 2M x 18
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (15x17)
Description: IC SRAM 36MBIT PAR 165FBGA
Memory Format: SRAM
Clock Frequency: 167 MHz
Technology: SRAM - Synchronous, QDR II
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 36Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 2M x 18
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (15x17)
на замовлення 273 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 3254.83 грн |
| IPP042N03L G |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Description: N-CHANNEL POWER MOSFET
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| TLE4276DVNTMA1 |
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Виробник: Infineon Technologies
Description: IC REG LINEAR ADJ LDO REGULATOR
Current - Supply (Max): 25 mA
Protection Features: Antisaturation, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 250mA
PSRR: 54dB (100Hz)
Part Status: Active
Control Features: Inhibit
Voltage - Output (Min/Fixed): 2.5V
Voltage - Output (Max): 20V
Supplier Device Package: PG-TO263-5-1
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 220 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 400mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
Packaging: Bulk
Description: IC REG LINEAR ADJ LDO REGULATOR
Current - Supply (Max): 25 mA
Protection Features: Antisaturation, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 250mA
PSRR: 54dB (100Hz)
Part Status: Active
Control Features: Inhibit
Voltage - Output (Min/Fixed): 2.5V
Voltage - Output (Max): 20V
Supplier Device Package: PG-TO263-5-1
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 220 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 400mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
Packaging: Bulk
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| IRFI4905 |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 55V 41A TO220AB FP
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB Full-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET P-CH 55V 41A TO220AB FP
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB Full-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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Мінімальне замовлення: 50 шт
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| IRFC4905B |
Виробник: Infineon Technologies
Description: MOSFET 55V 42A DIE
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: Die
Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55 V
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Description: MOSFET 55V 42A DIE
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: Die
Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55 V
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
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| IR3889MTRPBFAUMA1 |
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Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 30A IQFN-36
Part Status: Active
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 2V
Voltage - Output (Max): 17V
Synchronous Rectifier: Yes
Supplier Device Package: PG-IQFN-36-2
Topology: Buck
Voltage - Input (Max): 17V
Frequency - Switching: 600kHz ~ 2MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 30A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 36-PowerVFQFN
Packaging: Tape & Reel (TR)
Description: IC REG BUCK ADJ 30A IQFN-36
Part Status: Active
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 2V
Voltage - Output (Max): 17V
Synchronous Rectifier: Yes
Supplier Device Package: PG-IQFN-36-2
Topology: Buck
Voltage - Input (Max): 17V
Frequency - Switching: 600kHz ~ 2MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 30A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 36-PowerVFQFN
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 5000 шт
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| IR3889MTRPBFAUMA1 |
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Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 30A IQFN-36
Part Status: Active
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 2V
Voltage - Output (Max): 17V
Synchronous Rectifier: Yes
Supplier Device Package: PG-IQFN-36-2
Topology: Buck
Voltage - Input (Max): 17V
Frequency - Switching: 600kHz ~ 2MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 30A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 36-PowerVFQFN
Packaging: Cut Tape (CT)
Description: IC REG BUCK ADJ 30A IQFN-36
Part Status: Active
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 2V
Voltage - Output (Max): 17V
Synchronous Rectifier: Yes
Supplier Device Package: PG-IQFN-36-2
Topology: Buck
Voltage - Input (Max): 17V
Frequency - Switching: 600kHz ~ 2MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 30A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 36-PowerVFQFN
Packaging: Cut Tape (CT)
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| IPN80R2K0P7ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CHANNEL 800V 3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 940mA, 10V
Power Dissipation (Max): 6.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 500 V
Description: MOSFET N-CHANNEL 800V 3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 940mA, 10V
Power Dissipation (Max): 6.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 500 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 20.27 грн |
| IPN80R2K0P7ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CHANNEL 800V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 940mA, 10V
Power Dissipation (Max): 6.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 500 V
Description: MOSFET N-CHANNEL 800V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 940mA, 10V
Power Dissipation (Max): 6.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 500 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| BGA612H6327 |
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Виробник: Infineon Technologies
Description: IC AMP 802.15 500MHZ-6GHZ SOT343
Part Status: Active
Supplier Device Package: PG-SOT343-4
Test Frequency: 1.575GHz
P1dB: -16.5dBm
Noise Figure: 1dB
Current - Supply: 10mA
Gain: 15dB
Voltage - Supply: 2.75V
RF Type: 802.15/Bluetooth, ISM, WLAN, GSM, GPS, DCS, UMTS
Frequency: 500MHz ~ 6GHz
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Packaging: Bulk
Description: IC AMP 802.15 500MHZ-6GHZ SOT343
Part Status: Active
Supplier Device Package: PG-SOT343-4
Test Frequency: 1.575GHz
P1dB: -16.5dBm
Noise Figure: 1dB
Current - Supply: 10mA
Gain: 15dB
Voltage - Supply: 2.75V
RF Type: 802.15/Bluetooth, ISM, WLAN, GSM, GPS, DCS, UMTS
Frequency: 500MHz ~ 6GHz
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Packaging: Bulk
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| 2EDL05I06PFXUMA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 48ns, 24ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 500mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 48ns, 24ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 500mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 39.02 грн |
| 2EDL05I06PFXUMA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE DSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 48ns, 24ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 500mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE DSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 48ns, 24ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 500mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2979 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 80.59 грн |
| 10+ | 56.19 грн |
| 25+ | 50.86 грн |
| 100+ | 42.19 грн |
| 250+ | 39.55 грн |
| 500+ | 37.95 грн |
| 1000+ | 36.59 грн |
| SAF-C505CA-LMCA |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT ROMLESS 44MQFP
Packaging: Bulk
Package / Case: 44-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 1.25K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C500
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V
Connectivity: CANbus, EBI/EMI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-44-2
Part Status: Active
Number of I/O: 34
Description: IC MCU 8BIT ROMLESS 44MQFP
Packaging: Bulk
Package / Case: 44-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 1.25K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C500
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V
Connectivity: CANbus, EBI/EMI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-44-2
Part Status: Active
Number of I/O: 34
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| SAFC505CALMCA |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT ROMLESS 44MQFP
Package / Case: 44-QFP
Packaging: Bulk
Number of I/O: 34
Part Status: Active
Supplier Device Package: PG-MQFP-44-2
Peripherals: POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: C500
Program Memory Type: ROMless
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 1.25K x 8
Speed: 20MHz
Mounting Type: Surface Mount
Description: IC MCU 8BIT ROMLESS 44MQFP
Package / Case: 44-QFP
Packaging: Bulk
Number of I/O: 34
Part Status: Active
Supplier Device Package: PG-MQFP-44-2
Peripherals: POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: C500
Program Memory Type: ROMless
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 1.25K x 8
Speed: 20MHz
Mounting Type: Surface Mount
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| TC264D40F200NBCKXUMA2 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 2.5MB FLASH 144LQFP
DigiKey Programmable: Not Verified
Number of I/O: 88
Part Status: Active
Supplier Device Package: PG-LQFP-144-22
Peripherals: DMA, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Core Size: 32-Bit Dual-Core
Data Converters: A/D 48x12b SAR, 3 x Sigma-Delta
Core Processor: TriCore™
EEPROM Size: 96K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 240K x 8
Program Memory Size: 2.5MB (2.5M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC MCU 32BIT 2.5MB FLASH 144LQFP
DigiKey Programmable: Not Verified
Number of I/O: 88
Part Status: Active
Supplier Device Package: PG-LQFP-144-22
Peripherals: DMA, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Core Size: 32-Bit Dual-Core
Data Converters: A/D 48x12b SAR, 3 x Sigma-Delta
Core Processor: TriCore™
EEPROM Size: 96K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 240K x 8
Program Memory Size: 2.5MB (2.5M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP Exposed Pad
Packaging: Tape & Reel (TR)
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 905.01 грн |
| TC264D40F200NBCKXUMA2 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 2.5MB FLASH 144LQFP
DigiKey Programmable: Not Verified
Number of I/O: 88
Part Status: Active
Supplier Device Package: PG-LQFP-144-22
Peripherals: DMA, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Core Size: 32-Bit Dual-Core
Data Converters: A/D 48x12b SAR, 3 x Sigma-Delta
Core Processor: TriCore™
EEPROM Size: 96K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 240K x 8
Program Memory Size: 2.5MB (2.5M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP Exposed Pad
Packaging: Cut Tape (CT)
Description: IC MCU 32BIT 2.5MB FLASH 144LQFP
DigiKey Programmable: Not Verified
Number of I/O: 88
Part Status: Active
Supplier Device Package: PG-LQFP-144-22
Peripherals: DMA, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Core Size: 32-Bit Dual-Core
Data Converters: A/D 48x12b SAR, 3 x Sigma-Delta
Core Processor: TriCore™
EEPROM Size: 96K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 240K x 8
Program Memory Size: 2.5MB (2.5M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 1692 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1515.72 грн |
| 10+ | 1169.53 грн |
| 25+ | 1097.10 грн |
| 100+ | 954.93 грн |
| 250+ | 919.34 грн |
| 500+ | 897.89 грн |
| ITS436L2SHKSA1 |
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Виробник: Infineon Technologies
Description: BUFFER/INVERTER PERIPHL DRIVER
Description: BUFFER/INVERTER PERIPHL DRIVER
на замовлення 3879 шт:
термін постачання 21-31 дні (днів)
| BTS430K2E3122A |
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Виробник: Infineon Technologies
Description: BUFFER/INVERTER PERIPHL DRIVER
Current - Output (Max): 36A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 4.5V ~ 32V
Input Type: Non-Inverting
Rds On (Typ): 30mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
Features: Auto Restart, Slew Rate Controlled
Packaging: Bulk
Part Status: Active
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Supplier Device Package: P-TO220-5-122
Ratio - Input:Output: 1:1
Description: BUFFER/INVERTER PERIPHL DRIVER
Current - Output (Max): 36A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 4.5V ~ 32V
Input Type: Non-Inverting
Rds On (Typ): 30mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
Features: Auto Restart, Slew Rate Controlled
Packaging: Bulk
Part Status: Active
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Supplier Device Package: P-TO220-5-122
Ratio - Input:Output: 1:1
товару немає в наявності
В кошику
од. на суму грн.
| BTS436L2GNTMA1 |
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Виробник: Infineon Technologies
Description: BUFFER/INVERTER PERIPHL DRIVER
Part Status: Active
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Load, Over Temperature, Over Voltage, Short Circuit, UVLO
Supplier Device Package: PG-TO263-5-2
Ratio - Input:Output: 1:1
Current - Output (Max): 9.8A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 4.75V ~ 41V
Input Type: Non-Inverting
Rds On (Typ): 35mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Features: Slew Rate Controlled
Packaging: Bulk
Description: BUFFER/INVERTER PERIPHL DRIVER
Part Status: Active
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Load, Over Temperature, Over Voltage, Short Circuit, UVLO
Supplier Device Package: PG-TO263-5-2
Ratio - Input:Output: 1:1
Current - Output (Max): 9.8A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 4.75V ~ 41V
Input Type: Non-Inverting
Rds On (Typ): 35mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Features: Slew Rate Controlled
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| BFR182E-6327 |
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Виробник: Infineon Technologies
Description: RF N-CHANNEL MOSFET
Description: RF N-CHANNEL MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| 2EDF9275FXUMA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 109.21 грн |
| 2EDF9275FXUMA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3090 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 205.35 грн |
| 10+ | 148.35 грн |
| 25+ | 135.93 грн |
| 100+ | 114.74 грн |
| 250+ | 108.62 грн |
| 500+ | 104.94 грн |
| 1000+ | 100.23 грн |
| FS200R12PT4BOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 280A 1000W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1000 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
Description: IGBT MOD 1200V 280A 1000W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1000 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
на замовлення 27 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 10747.97 грн |
| 12+ | 9352.22 грн |
| BTS611L1E3128ANTMA1 |
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Виробник: Infineon Technologies
Description: 2 CH HIGH-SIDE POWER SWITCH
Part Status: Active
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Short Circuit, UVLO
Supplier Device Package: P-TO263-7-2
Ratio - Input:Output: 1:1
Current - Output (Max): 4.4A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 5V ~ 34V
Input Type: Non-Inverting
Rds On (Typ): 160mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: Logic
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Features: Auto Restart, Slew Rate Controlled
Packaging: Bulk
Description: 2 CH HIGH-SIDE POWER SWITCH
Part Status: Active
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Short Circuit, UVLO
Supplier Device Package: P-TO263-7-2
Ratio - Input:Output: 1:1
Current - Output (Max): 4.4A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 5V ~ 34V
Input Type: Non-Inverting
Rds On (Typ): 160mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: Logic
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Features: Auto Restart, Slew Rate Controlled
Packaging: Bulk
на замовлення 71296 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 137+ | 154.72 грн |
| BSC0910NDIATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET 2N-CH 25V 11A/31A TISON8
Part Status: Active
Supplier Device Package: PG-TISON-8
Vgs(th) (Max) @ Id: 2V @ 250µA
FET Feature: Logic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 12V
Current - Continuous Drain (Id) @ 25°C: 11A, 31A
Drain to Source Voltage (Vdss): 25V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 25V 11A/31A TISON8
Part Status: Active
Supplier Device Package: PG-TISON-8
Vgs(th) (Max) @ Id: 2V @ 250µA
FET Feature: Logic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 12V
Current - Continuous Drain (Id) @ 25°C: 11A, 31A
Drain to Source Voltage (Vdss): 25V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 56.70 грн |
| BSC0910NDIATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET 2N-CH 25V 11A/31A TISON8
Part Status: Active
Supplier Device Package: PG-TISON-8
Vgs(th) (Max) @ Id: 2V @ 250µA
FET Feature: Logic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 12V
Current - Continuous Drain (Id) @ 25°C: 11A, 31A
Drain to Source Voltage (Vdss): 25V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 25V 11A/31A TISON8
Part Status: Active
Supplier Device Package: PG-TISON-8
Vgs(th) (Max) @ Id: 2V @ 250µA
FET Feature: Logic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 12V
Current - Continuous Drain (Id) @ 25°C: 11A, 31A
Drain to Source Voltage (Vdss): 25V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 10182 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 179.78 грн |
| 10+ | 117.30 грн |
| 100+ | 80.49 грн |
| 500+ | 60.74 грн |
| 1000+ | 57.45 грн |
| BSP372NH6327XTSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 1.8A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 1.8A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 218µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 329 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 1.8A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 1.8A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 218µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 329 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 65000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 26.33 грн |
| 2000+ | 23.14 грн |
| 3000+ | 22.01 грн |
| 5000+ | 19.46 грн |
| 7000+ | 18.76 грн |
| 10000+ | 18.07 грн |
| BCR196WH6327XTSA1 |
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Виробник: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT323
Resistors Included: R1 and R2
Supplier Device Package: PG-SOT323
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 150 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 70 mA
Description: TRANS PREBIAS PNP 50V SOT323
Resistors Included: R1 and R2
Supplier Device Package: PG-SOT323
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 150 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 70 mA
на замовлення 489000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4486+ | 4.65 грн |
| BCR196E6327HTSA1 |
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Виробник: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT23
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 150 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 70 mA
Supplier Device Package: PG-SOT23
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Description: TRANS PREBIAS PNP 50V SOT23
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 150 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 70 mA
Supplier Device Package: PG-SOT23
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
на замовлення 156000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6648+ | 3.32 грн |
| BB831E7904HTSA1 |
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Виробник: Infineon Technologies
Description: DIODE VAR CAP 30V 20MA SOD-323
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 1.2pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SOD323-3D
Part Status: Obsolete
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 9.5
Description: DIODE VAR CAP 30V 20MA SOD-323
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 1.2pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SOD323-3D
Part Status: Obsolete
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 9.5
на замовлення 92500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2077+ | 9.67 грн |
| BB831E7904 |
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Виробник: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 1.2pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SOD323-2
Part Status: Active
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 9.5
Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 1.2pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SOD323-2
Part Status: Active
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 9.5
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| BTS730CT |
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Виробник: Infineon Technologies
Description: FLUORESCENT LIGHT CONTROLLER
Description: FLUORESCENT LIGHT CONTROLLER
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| BTS730NT |
Виробник: Infineon Technologies
Description: IC PWR PWM N-CH 1:1 DSO-20
Description: IC PWR PWM N-CH 1:1 DSO-20
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| XMC1404F064X0200AAXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 200KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-26
Part Status: Active
Number of I/O: 48
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 200KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-26
Part Status: Active
Number of I/O: 48
DigiKey Programmable: Not Verified
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Мінімальне замовлення: 1900 шт
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