Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (123014) > Сторінка 341 з 2051
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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| ND350N16KHPSA1 | Infineon Technologies |
Description: DIODE GP 1.6KV 350A PB50ND-1 |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | |||||||||||||||
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BAT 17-05W H6327 | Infineon Technologies |
Description: RF MIXER/DETECTOR SCHOTTKY DIODE |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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BCX71GE6327 | Infineon Technologies |
Description: TRANS PNP 45V 0.1A SOT23Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 330 mW |
на замовлення 47500 шт: термін постачання 21-31 дні (днів) |
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BCX71JE6327 | Infineon Technologies |
Description: TRANS PNP 45V 0.1A SOT23Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 330 mW |
на замовлення 54500 шт: термін постачання 21-31 дні (днів) |
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BCX71HE6327 | Infineon Technologies |
Description: TRANS PNP 45V 0.1A SOT23Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 330 mW |
на замовлення 1275000 шт: термін постачання 21-31 дні (днів) |
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BCX71KE6327 | Infineon Technologies |
Description: SMALL SIGNAL BIPOLAR TRANSISTOR |
на замовлення 33000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 15000 шт В кошику од. на суму грн. | ||||||||||||||
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BCX 71H E6327 | Infineon Technologies |
Description: TRANS PNP 45V 0.1A SOT23Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 330 mW |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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BCX71H | Infineon Technologies |
Description: SMALL SIGNAL BIPOLAR TRANSISTORPackaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BCX71GE6327HTSA1 | Infineon Technologies |
Description: TRANS PNP 45V 0.1A PG-SOT23Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 330 mW |
на замовлення 702500 шт: термін постачання 21-31 дні (днів) |
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BCX71JE6433HTMA1 | Infineon Technologies |
Description: TRANS PNP 45V 0.1A PG-SOT23Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Part Status: Not For New Designs Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 330 mW |
на замовлення 573000 шт: термін постачання 21-31 дні (днів) |
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ESD217B102ELE6327XTMA1 | Infineon Technologies |
Description: TVS DIODE 14VWM 29V PGTSLP219Packaging: Tape & Reel (TR) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: Ethernet Capacitance @ Frequency: 9pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 14V (Max) Supplier Device Package: PG-TSLP-2-19 Bidirectional Channels: 1 Voltage - Breakdown (Min): 8.5V Voltage - Clamping (Max) @ Ipp: 29V (Typ) Power - Peak Pulse: 85W Power Line Protection: No Part Status: Not For New Designs |
на замовлення 60000 шт: термін постачання 21-31 дні (днів) |
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ESD217B102ELE6327XTMA1 | Infineon Technologies |
Description: TVS DIODE 14VWM 29V PGTSLP219Packaging: Cut Tape (CT) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: Ethernet Capacitance @ Frequency: 9pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 14V (Max) Supplier Device Package: PG-TSLP-2-19 Bidirectional Channels: 1 Voltage - Breakdown (Min): 8.5V Voltage - Clamping (Max) @ Ipp: 29V (Typ) Power - Peak Pulse: 85W Power Line Protection: No Part Status: Not For New Designs |
на замовлення 65742 шт: термін постачання 21-31 дні (днів) |
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BSC027N03S G | Infineon Technologies |
Description: MOSFET N-CH 30V 25A/100A TDSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2V @ 90µA Supplier Device Package: PG-TDSON-8-1 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 6540 pF @ 15 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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BSC12DN20NS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 200V 11.3A 8TDSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 5.7A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 25µA Supplier Device Package: PG-TDSON-8-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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BSC12DN20NS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 200V 11.3A 8TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 5.7A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 25µA Supplier Device Package: PG-TDSON-8-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V |
на замовлення 2251 шт: термін постачання 21-31 дні (днів) |
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IGOT60R070D1AUMA1 | Infineon Technologies |
Description: GANFET N-CH 600V 31A 20DSOInput Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): -10V Supplier Device Package: PG-DSO-20-87 Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Power Dissipation (Max): 125W (Tc) Current - Continuous Drain (Id) @ 25°C: 31A (Tc) FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 20-PowerSOIC (0.433", 11.00mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IGW50N65HS | Infineon Technologies |
Description: IGBT WITHOUT ANTI-PARALLEL DIODEPackaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SLM9670AQ20FW1311XTMA1 | Infineon Technologies |
Description: INDUSTRIAL TPM SECURITYPackaging: Tape & Reel (TR) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: SPI Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V Program Memory Type: NVM (6.8kB) Applications: Trusted Platform Module (TPM) Core Processor: 16-Bit Supplier Device Package: PG-VQFN-32-13 Part Status: Active Number of I/O: 1 DigiKey Programmable: Not Verified |
на замовлення 2700 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 2700 шт В кошику од. на суму грн. | ||||||||||||||
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SLM9670AQ20FW1311XTMA1 | Infineon Technologies |
Description: INDUSTRIAL TPM SECURITYPackaging: Cut Tape (CT) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: SPI Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V Program Memory Type: NVM (6.8kB) Applications: Trusted Platform Module (TPM) Core Processor: 16-Bit Supplier Device Package: PG-VQFN-32-13 Part Status: Active Number of I/O: 1 DigiKey Programmable: Not Verified |
на замовлення 3410 шт: термін постачання 21-31 дні (днів) |
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BSC150N03LD | Infineon Technologies |
Description: MOSFET 2N-CH 30V 8A 8TDSONPackaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 26W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TDSON-8-4 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSO301SPHXUMA1 | Infineon Technologies |
Description: MOSFET P-CH 30V 12.6A 8DSOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 14.9A, 10V Power Dissipation (Max): 1.79W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-DSO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V |
на замовлення 7777 шт: термін постачання 21-31 дні (днів) |
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IFX1117GSV33 | Infineon Technologies |
Description: IC REG LIN 3.3V 1A PG-SOT223-4Packaging: Bulk Package / Case: TO-261-4, TO-261AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: 0°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 10 mA Voltage - Input (Max): 15V Number of Regulators: 1 Supplier Device Package: PG-SOT223-4 Voltage - Output (Min/Fixed): 3.3V Part Status: Active PSRR: 65dB (120Hz) Voltage Dropout (Max): 1.4V @ 1A Protection Features: Over Current, Over Temperature, Short Circuit |
на замовлення 1004 шт: термін постачання 21-31 дні (днів) |
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| BSS215P H6327 | Infineon Technologies |
Description: SMALL SIGNAL P-CHANNEL MOSFETInput Capacitance (Ciss) (Max) @ Vds: 346 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: PG-SOT23-3-5 Vgs(th) (Max) @ Id: 600mV @ 11µA Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk FET Type: P-Channel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PMA7105 | Infineon Technologies |
Description: 8-BIT FLASH MCU, 8051 CPU, 12MHZDigiKey Programmable: Not Verified Supplier Device Package: PG-TSSOP-38 Antenna Connector: PCB, Surface Mount Current - Transmitting: 17.1mA Data Rate (Max): 20kbps Applications: Remote Control, Remote Metering Power - Output: 10dBm Voltage - Supply: 1.9V ~ 3.6V Operating Temperature: -40°C ~ 125°C Data Interface: PCB, Surface Mount Modulation or Protocol: ASK, FSK Memory Size: 6KB Flash, 12KB ROM, 256 Byte RAM Frequency: 315MHz, 434MHz, 868MHz, 915MHz Mounting Type: Surface Mount Package / Case: 38-TFSOP (0.173", 4.40mm Width) Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IPS050N03LG | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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SPD50N03S2L | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 6.4mOhm @ 50A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2V @ 85µA Supplier Device Package: PG-TO252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
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| BSF050N03LQ3G | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: DirectFET™ Isometric MX Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Power Dissipation (Max): 2.2W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: MG-WDSON-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 15 V |
на замовлення 14925 шт: термін постачання 21-31 дні (днів) |
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SPD50N03S2-07G | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETInput Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 46.5 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO252-3-11 Vgs(th) (Max) @ Id: 4V @ 85µA Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SPD50N03S2L-06G | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPart Status: Active Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SPD50N03S2-07 G | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETInput Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 46.5 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO252-3-11 Vgs(th) (Max) @ Id: 4V @ 85µA Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRLML9301TRPBF | Infineon Technologies |
Description: MOSFET P-CH 30V 3.6A SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 64mOhm @ 3.6A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 10µA Supplier Device Package: Micro3™/SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 388 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRLML9301TRPBF | Infineon Technologies |
Description: MOSFET P-CH 30V 3.6A SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 64mOhm @ 3.6A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 10µA Supplier Device Package: Micro3™/SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 388 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PVA3054 | Infineon Technologies |
Description: SSR RELAY SPST-NO 40MA 0-300VPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads Output Type: AC, DC Mounting Type: Through Hole Voltage - Input: 1.2VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 85°C Termination Style: PC Pin Load Current: 40 mA Approval Agency: UL Relay Type: Photo-Coupled Relay (Photorelay) Supplier Device Package: 8-DIP Modified Part Status: Obsolete Voltage - Load: 0 V ~ 300 V On-State Resistance (Max): 160 Ohms |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||||||||||
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PVA3055 | Infineon Technologies |
Description: SSR RELAY SPST-NO 40MA 0-300V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PEB42652VV1.1 | Infineon Technologies |
Description: DUSLIC DUAL CHANNEL SLICPackaging: Bulk Part Status: Active |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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| PEB4265-2TV1.1GD | Infineon Technologies |
Description: DUSLIC DUAL CHANNEL SLIC Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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ICL5101XUMA1 | Infineon Technologies |
Description: IC LED DRIVER OFFL 16DSOPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Number of Outputs: 3 Type: AC DC Offline Switcher Operating Temperature: -40°C ~ 125°C (TJ) Applications: Lighting Internal Switch(s): No Supplier Device Package: PG-DSO-16-23 Part Status: Not For New Designs |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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KITAURIXTC267TFTTOBO1 | Infineon Technologies |
Description: AURIX APPLICATION KIT TC267 TFT Platform: AURIX Utilized IC / Part: TC267 Core Processor: TriCore™ Contents: Board(s), LCD Type: MCU 32-Bit Mounting Type: Fixed Packaging: Box |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRF6636TRPBF | Infineon Technologies |
Description: MOSFET N-CH 20V 18A DIRECTFETPackaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric ST Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 81A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 10V Power Dissipation (Max): 2.2W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 2.45V @ 250µA Supplier Device Package: DIRECTFET™ ST Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2420 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPB037N06N3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 90A D2PAKInput Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO263-3 Vgs(th) (Max) @ Id: 4V @ 90µA Power Dissipation (Max): 188W (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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IPB037N06N3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 90A D2PAKDrive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO263-3 Vgs(th) (Max) @ Id: 4V @ 90µA Power Dissipation (Max): 188W (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V |
на замовлення 1537 шт: термін постачання 21-31 дні (днів) |
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| BGH 92M E6327 | Infineon Technologies |
Description: FILTER LC ESD SMD |
товару немає в наявності |
Мінімальне замовлення: 7500 шт В кошику од. на суму грн. | |||||||||||||||
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IRS21814SPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 14SOICPackaging: Tube Part Status: Active Current - Peak Output (Source, Sink): 1.9A, 2.3A Logic Voltage - VIL, VIH: 0.8V, 2.5V Gate Type: IGBT, MOSFET (N-Channel) Number of Drivers: 2 Driven Configuration: Half-Bridge Channel Type: Independent Rise / Fall Time (Typ): 40ns, 20ns Supplier Device Package: 14-SOIC High Side Voltage - Max (Bootstrap): 600 V Input Type: Non-Inverting Voltage - Supply: 10V ~ 20V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1980 шт В кошику од. на суму грн. | ||||||||||||||
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IRS21814PBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 14DIPDigiKey Programmable: Not Verified Part Status: Discontinued at Digi-Key Current - Peak Output (Source, Sink): 1.9A, 2.3A Logic Voltage - VIL, VIH: 0.8V, 2.5V Gate Type: IGBT, MOSFET (N-Channel) Driven Configuration: Half-Bridge Channel Type: Independent Rise / Fall Time (Typ): 40ns, 20ns Supplier Device Package: 14-DIP High Side Voltage - Max (Bootstrap): 600 V Input Type: Non-Inverting Voltage - Supply: 10V ~ 20V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm) Packaging: Tube Number of Drivers: 2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AUIRS21814S | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 14SOICPart Status: Obsolete Current - Peak Output (Source, Sink): 1.9A, 2.3A Logic Voltage - VIL, VIH: 0.8V, 2.5V Gate Type: IGBT, MOSFET (N-Channel) Number of Drivers: 2 Driven Configuration: Half-Bridge Channel Type: Independent Rise / Fall Time (Typ): 15ns, 15ns Supplier Device Package: 14-SOIC High Side Voltage - Max (Bootstrap): 600 V Input Type: Inverting Voltage - Supply: 10V ~ 20V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Packaging: Tube DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
IRS21814MPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 16MLPQPart Status: Obsolete Current - Peak Output (Source, Sink): 1.9A, 2.3A Logic Voltage - VIL, VIH: 0.8V, 2.5V Gate Type: MOSFET (N-Channel) Number of Drivers: 2 Driven Configuration: Half-Bridge Channel Type: Independent Rise / Fall Time (Typ): 40ns, 20ns Supplier Device Package: 16-MLPQ (4x4) High Side Voltage - Max (Bootstrap): 600 V Input Type: Non-Inverting Voltage - Supply: 10V ~ 20V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-VFQFN Exposed Pad, 14 Leads Packaging: Tube DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 273 шт В кошику од. на суму грн. | ||||||||||||||
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MMBTA06LT1 | Infineon Technologies |
Description: TRANS NPN 80V 0.5A SOT23-3Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 500 mA Part Status: Obsolete Supplier Device Package: SOT-23-3 (TO-236) Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk Power - Max: 225 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PSB2163NV3.1G | Infineon Technologies |
Description: ARCOFI AUDIO RINGING CODECPackaging: Bulk |
на замовлення 275 шт: термін постачання 21-31 дні (днів) |
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PEB20560V3.1DOC | Infineon Technologies |
Description: TIME SLOT ASSIGNER Packaging: Bulk |
на замовлення 14230 шт: термін постачання 21-31 дні (днів) |
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| PSB2163NV3.1 | Infineon Technologies |
Description: ARCOFI AUDIO RINGING CODEC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PEB20570FV3.1 | Infineon Technologies |
Description: LINE & PORT INTERFACE CONTROLLERPackaging: Bulk Package / Case: 100-LQFP Mounting Type: Surface Mount Function: Line Card Controller Interface: ISDN Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3.13V ~ 3.47V Current - Supply: 272.6mA Supplier Device Package: PG-TQFP-100-3 Part Status: Active |
на замовлення 2571 шт: термін постачання 21-31 дні (днів) |
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| PSB7280FV3.1D | Infineon Technologies |
Description: JOINT AUDIO DECODER-ENCODERPackaging: Bulk Part Status: Active |
на замовлення 80 шт: термін постачання 21-31 дні (днів) |
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PEB2096HV3.1 | Infineon Technologies | Description: OCTAT-P OCTAL TRANSCEICER |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PEF22554HTV3.1 | Infineon Technologies | Description: QUADFALC FRAMER & LINE INTERFACE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
BC857AE6327 | Infineon Technologies |
Description: TRANS PNP 45V 0.1A SOT23Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V Current - Collector Cutoff (Max): 15nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk Power - Max: 330 mW Voltage - Collector Emitter Breakdown (Max): 45 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: PG-SOT23 |
на замовлення 36000 шт: термін постачання 21-31 дні (днів) |
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| IPA023N04NM3SXKSA1 | Infineon Technologies |
Description: TRENCH <= 40V Part Status: Active Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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S2GOPRESSUREDPS310TOBO1 | Infineon Technologies |
Description: EVAL PRESSURE DPS310Packaging: Box Function: Pressure Type: Sensor Contents: Board(s) Utilized IC / Part: DPS310 Platform: Shield2Go Part Status: Active |
на замовлення 157 шт: термін постачання 21-31 дні (днів) |
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SPB100N04S2-04 | Infineon Technologies |
Description: MOSFET N-CH 40V 100A TO263-3Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7220 pF @ 25 V |
на замовлення 433 шт: термін постачання 21-31 дні (днів) |
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T1080N02TOFXPSA1 | Infineon Technologies |
Description: SCR MODULE 600V 2000A DO200AAPackaging: Tray Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Operating Temperature: -40°C ~ 140°C Structure: Single Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 200 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 16000A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 1078 A Voltage - Gate Trigger (Vgt) (Max): 2 V Part Status: Obsolete Current - On State (It (RMS)) (Max): 2000 A Voltage - Off State: 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| T580N02TOFXPSA1 | Infineon Technologies |
Description: SCR MODULE 600V 800A DO200AAPackaging: Tray Package / Case: TO-200AA Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 140°C Structure: Single Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 6300A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 568 A Voltage - Gate Trigger (Vgt) (Max): 1.4 V Part Status: Obsolete Current - On State (It (RMS)) (Max): 800 A Voltage - Off State: 600 V |
товару немає в наявності |
В кошику од. на суму грн. |
| ND350N16KHPSA1 |
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Виробник: Infineon Technologies
Description: DIODE GP 1.6KV 350A PB50ND-1
Description: DIODE GP 1.6KV 350A PB50ND-1
товару немає в наявності
Мінімальне замовлення: 3 шт
В кошику
од. на суму грн.
| BAT 17-05W H6327 |
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Виробник: Infineon Technologies
Description: RF MIXER/DETECTOR SCHOTTKY DIODE
Description: RF MIXER/DETECTOR SCHOTTKY DIODE
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3718+ | 5.84 грн |
| BCX71GE6327 |
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Виробник: Infineon Technologies
Description: TRANS PNP 45V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
Description: TRANS PNP 45V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
на замовлення 47500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6869+ | 2.83 грн |
| BCX71JE6327 |
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Виробник: Infineon Technologies
Description: TRANS PNP 45V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
Description: TRANS PNP 45V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
на замовлення 54500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7454+ | 3.10 грн |
| BCX71HE6327 |
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Виробник: Infineon Technologies
Description: TRANS PNP 45V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
Description: TRANS PNP 45V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
на замовлення 1275000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6869+ | 2.83 грн |
| BCX71KE6327 |
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Виробник: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)
| BCX 71H E6327 |
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Виробник: Infineon Technologies
Description: TRANS PNP 45V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
Description: TRANS PNP 45V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7454+ | 3.10 грн |
| BCX71GE6327HTSA1 |
![]() |
Виробник: Infineon Technologies
Description: TRANS PNP 45V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
Description: TRANS PNP 45V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
на замовлення 702500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4706+ | 3.98 грн |
| BCX71JE6433HTMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRANS PNP 45V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
Description: TRANS PNP 45V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
на замовлення 573000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4706+ | 3.98 грн |
| ESD217B102ELE6327XTMA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 14VWM 29V PGTSLP219
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: PG-TSLP-2-19
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.5V
Voltage - Clamping (Max) @ Ipp: 29V (Typ)
Power - Peak Pulse: 85W
Power Line Protection: No
Part Status: Not For New Designs
Description: TVS DIODE 14VWM 29V PGTSLP219
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: PG-TSLP-2-19
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.5V
Voltage - Clamping (Max) @ Ipp: 29V (Typ)
Power - Peak Pulse: 85W
Power Line Protection: No
Part Status: Not For New Designs
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15000+ | 4.30 грн |
| 30000+ | 4.04 грн |
| ESD217B102ELE6327XTMA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 14VWM 29V PGTSLP219
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: PG-TSLP-2-19
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.5V
Voltage - Clamping (Max) @ Ipp: 29V (Typ)
Power - Peak Pulse: 85W
Power Line Protection: No
Part Status: Not For New Designs
Description: TVS DIODE 14VWM 29V PGTSLP219
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: PG-TSLP-2-19
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.5V
Voltage - Clamping (Max) @ Ipp: 29V (Typ)
Power - Peak Pulse: 85W
Power Line Protection: No
Part Status: Not For New Designs
на замовлення 65742 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.80 грн |
| 20+ | 14.92 грн |
| 100+ | 9.37 грн |
| 500+ | 6.53 грн |
| 1000+ | 5.80 грн |
| 2000+ | 5.18 грн |
| 5000+ | 4.44 грн |
| BSC027N03S G |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 25A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6540 pF @ 15 V
Description: MOSFET N-CH 30V 25A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6540 pF @ 15 V
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Мінімальне замовлення: 5000 шт
В кошику
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| BSC12DN20NS3GATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 11.3A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 5.7A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
Description: MOSFET N-CH 200V 11.3A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 5.7A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
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Мінімальне замовлення: 5000 шт
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| BSC12DN20NS3GATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 11.3A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 5.7A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
Description: MOSFET N-CH 200V 11.3A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 5.7A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
на замовлення 2251 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 125.54 грн |
| 10+ | 77.08 грн |
| 100+ | 51.79 грн |
| 500+ | 38.41 грн |
| 1000+ | 35.13 грн |
| 2000+ | 32.78 грн |
| IGOT60R070D1AUMA1 |
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Виробник: Infineon Technologies
Description: GANFET N-CH 600V 31A 20DSO
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): -10V
Supplier Device Package: PG-DSO-20-87
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Power Dissipation (Max): 125W (Tc)
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Packaging: Cut Tape (CT)
Description: GANFET N-CH 600V 31A 20DSO
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): -10V
Supplier Device Package: PG-DSO-20-87
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Power Dissipation (Max): 125W (Tc)
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Packaging: Cut Tape (CT)
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| IGW50N65HS |
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Виробник: Infineon Technologies
Description: IGBT WITHOUT ANTI-PARALLEL DIODE
Packaging: Bulk
Part Status: Active
Description: IGBT WITHOUT ANTI-PARALLEL DIODE
Packaging: Bulk
Part Status: Active
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| SLM9670AQ20FW1311XTMA1 |
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Виробник: Infineon Technologies
Description: INDUSTRIAL TPM SECURITY
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Program Memory Type: NVM (6.8kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 16-Bit
Supplier Device Package: PG-VQFN-32-13
Part Status: Active
Number of I/O: 1
DigiKey Programmable: Not Verified
Description: INDUSTRIAL TPM SECURITY
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Program Memory Type: NVM (6.8kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 16-Bit
Supplier Device Package: PG-VQFN-32-13
Part Status: Active
Number of I/O: 1
DigiKey Programmable: Not Verified
на замовлення 2700 шт:
термін постачання 21-31 дні (днів)
| SLM9670AQ20FW1311XTMA1 |
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Виробник: Infineon Technologies
Description: INDUSTRIAL TPM SECURITY
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Program Memory Type: NVM (6.8kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 16-Bit
Supplier Device Package: PG-VQFN-32-13
Part Status: Active
Number of I/O: 1
DigiKey Programmable: Not Verified
Description: INDUSTRIAL TPM SECURITY
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Program Memory Type: NVM (6.8kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 16-Bit
Supplier Device Package: PG-VQFN-32-13
Part Status: Active
Number of I/O: 1
DigiKey Programmable: Not Verified
на замовлення 3410 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 380.48 грн |
| 10+ | 278.63 грн |
| 25+ | 256.78 грн |
| 100+ | 218.35 грн |
| 250+ | 207.57 грн |
| 500+ | 201.07 грн |
| BSC150N03LD |
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Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 8A 8TDSON
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 26W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
Description: MOSFET 2N-CH 30V 8A 8TDSON
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 26W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
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| BSO301SPHXUMA1 |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 12.6A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14.9A, 10V
Power Dissipation (Max): 1.79W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V
Description: MOSFET P-CH 30V 12.6A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14.9A, 10V
Power Dissipation (Max): 1.79W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V
на замовлення 7777 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 144.91 грн |
| 10+ | 94.92 грн |
| 100+ | 67.52 грн |
| 500+ | 51.97 грн |
| 1000+ | 48.25 грн |
| IFX1117GSV33 |
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Виробник: Infineon Technologies
Description: IC REG LIN 3.3V 1A PG-SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
Description: IC REG LIN 3.3V 1A PG-SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
на замовлення 1004 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 525+ | 38.01 грн |
| BSS215P H6327 |
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Виробник: Infineon Technologies
Description: SMALL SIGNAL P-CHANNEL MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 346 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: PG-SOT23-3-5
Vgs(th) (Max) @ Id: 600mV @ 11µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
FET Type: P-Channel
Description: SMALL SIGNAL P-CHANNEL MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 346 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: PG-SOT23-3-5
Vgs(th) (Max) @ Id: 600mV @ 11µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
FET Type: P-Channel
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| PMA7105 |
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Виробник: Infineon Technologies
Description: 8-BIT FLASH MCU, 8051 CPU, 12MHZ
DigiKey Programmable: Not Verified
Supplier Device Package: PG-TSSOP-38
Antenna Connector: PCB, Surface Mount
Current - Transmitting: 17.1mA
Data Rate (Max): 20kbps
Applications: Remote Control, Remote Metering
Power - Output: 10dBm
Voltage - Supply: 1.9V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Data Interface: PCB, Surface Mount
Modulation or Protocol: ASK, FSK
Memory Size: 6KB Flash, 12KB ROM, 256 Byte RAM
Frequency: 315MHz, 434MHz, 868MHz, 915MHz
Mounting Type: Surface Mount
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Packaging: Bulk
Description: 8-BIT FLASH MCU, 8051 CPU, 12MHZ
DigiKey Programmable: Not Verified
Supplier Device Package: PG-TSSOP-38
Antenna Connector: PCB, Surface Mount
Current - Transmitting: 17.1mA
Data Rate (Max): 20kbps
Applications: Remote Control, Remote Metering
Power - Output: 10dBm
Voltage - Supply: 1.9V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Data Interface: PCB, Surface Mount
Modulation or Protocol: ASK, FSK
Memory Size: 6KB Flash, 12KB ROM, 256 Byte RAM
Frequency: 315MHz, 434MHz, 868MHz, 915MHz
Mounting Type: Surface Mount
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Packaging: Bulk
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| IPS050N03LG |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 834+ | 24.45 грн |
| SPD50N03S2L |
![]() |
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 545+ | 37.36 грн |
| BSF050N03LQ3G |
![]() |
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 15 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 15 V
на замовлення 14925 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 525+ | 38.71 грн |
| SPD50N03S2-07G |
![]() |
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 46.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 4V @ 85µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 46.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 4V @ 85µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
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| SPD50N03S2L-06G |
![]() |
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Part Status: Active
Packaging: Bulk
Description: N-CHANNEL POWER MOSFET
Part Status: Active
Packaging: Bulk
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В кошику
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| SPD50N03S2-07 G |
![]() |
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 46.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 4V @ 85µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 46.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 4V @ 85µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
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| IRLML9301TRPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 3.6A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 3.6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 10µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 388 pF @ 25 V
Description: MOSFET P-CH 30V 3.6A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 3.6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 10µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 388 pF @ 25 V
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| IRLML9301TRPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 3.6A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 3.6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 10µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 388 pF @ 25 V
Description: MOSFET P-CH 30V 3.6A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 3.6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 10µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 388 pF @ 25 V
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| PVA3054 |
![]() |
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 40MA 0-300V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 40 mA
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 8-DIP Modified
Part Status: Obsolete
Voltage - Load: 0 V ~ 300 V
On-State Resistance (Max): 160 Ohms
Description: SSR RELAY SPST-NO 40MA 0-300V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 40 mA
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 8-DIP Modified
Part Status: Obsolete
Voltage - Load: 0 V ~ 300 V
On-State Resistance (Max): 160 Ohms
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| PVA3055 |
![]() |
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 40MA 0-300V
Description: SSR RELAY SPST-NO 40MA 0-300V
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| PEB42652VV1.1 |
![]() |
Виробник: Infineon Technologies
Description: DUSLIC DUAL CHANNEL SLIC
Packaging: Bulk
Part Status: Active
Description: DUSLIC DUAL CHANNEL SLIC
Packaging: Bulk
Part Status: Active
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 72+ | 298.72 грн |
| PEB4265-2TV1.1GD |
Виробник: Infineon Technologies
Description: DUSLIC DUAL CHANNEL SLIC
Packaging: Bulk
Part Status: Active
Description: DUSLIC DUAL CHANNEL SLIC
Packaging: Bulk
Part Status: Active
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| ICL5101XUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC LED DRIVER OFFL 16DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 3
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Lighting
Internal Switch(s): No
Supplier Device Package: PG-DSO-16-23
Part Status: Not For New Designs
Description: IC LED DRIVER OFFL 16DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 3
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Lighting
Internal Switch(s): No
Supplier Device Package: PG-DSO-16-23
Part Status: Not For New Designs
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
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| KITAURIXTC267TFTTOBO1 |
Виробник: Infineon Technologies
Description: AURIX APPLICATION KIT TC267 TFT
Platform: AURIX
Utilized IC / Part: TC267
Core Processor: TriCore™
Contents: Board(s), LCD
Type: MCU 32-Bit
Mounting Type: Fixed
Packaging: Box
Description: AURIX APPLICATION KIT TC267 TFT
Platform: AURIX
Utilized IC / Part: TC267
Core Processor: TriCore™
Contents: Board(s), LCD
Type: MCU 32-Bit
Mounting Type: Fixed
Packaging: Box
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| IRF6636TRPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 18A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric ST
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 10V
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Supplier Device Package: DIRECTFET™ ST
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2420 pF @ 10 V
Description: MOSFET N-CH 20V 18A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric ST
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 10V
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Supplier Device Package: DIRECTFET™ ST
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2420 pF @ 10 V
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| IPB037N06N3GATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 90A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 90µA
Power Dissipation (Max): 188W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 90A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 90µA
Power Dissipation (Max): 188W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 55.80 грн |
| IPB037N06N3GATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 90A D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 90µA
Power Dissipation (Max): 188W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Description: MOSFET N-CH 60V 90A D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 90µA
Power Dissipation (Max): 188W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
на замовлення 1537 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 175.13 грн |
| 10+ | 109.02 грн |
| 100+ | 74.76 грн |
| 500+ | 56.44 грн |
| BGH 92M E6327 |
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Виробник: Infineon Technologies
Description: FILTER LC ESD SMD
Description: FILTER LC ESD SMD
товару немає в наявності
Мінімальне замовлення: 7500 шт
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| IRS21814SPBF |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tube
Part Status: Active
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 40ns, 20ns
Supplier Device Package: 14-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tube
Part Status: Active
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 40ns, 20ns
Supplier Device Package: 14-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
DigiKey Programmable: Not Verified
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Мінімальне замовлення: 1980 шт
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| IRS21814PBF |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14DIP
DigiKey Programmable: Not Verified
Part Status: Discontinued at Digi-Key
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 40ns, 20ns
Supplier Device Package: 14-DIP
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Packaging: Tube
Number of Drivers: 2
Description: IC GATE DRVR HALF-BRIDGE 14DIP
DigiKey Programmable: Not Verified
Part Status: Discontinued at Digi-Key
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 40ns, 20ns
Supplier Device Package: 14-DIP
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Packaging: Tube
Number of Drivers: 2
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| AUIRS21814S |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Part Status: Obsolete
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 15ns, 15ns
Supplier Device Package: 14-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Part Status: Obsolete
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 15ns, 15ns
Supplier Device Package: 14-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
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| IRS21814MPBF |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16MLPQ
Part Status: Obsolete
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 40ns, 20ns
Supplier Device Package: 16-MLPQ (4x4)
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad, 14 Leads
Packaging: Tube
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 16MLPQ
Part Status: Obsolete
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 40ns, 20ns
Supplier Device Package: 16-MLPQ (4x4)
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad, 14 Leads
Packaging: Tube
DigiKey Programmable: Not Verified
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Мінімальне замовлення: 273 шт
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| MMBTA06LT1 |
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Виробник: Infineon Technologies
Description: TRANS NPN 80V 0.5A SOT23-3
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Power - Max: 225 mW
Description: TRANS NPN 80V 0.5A SOT23-3
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Power - Max: 225 mW
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| PSB2163NV3.1G |
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на замовлення 275 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 992.97 грн |
| PEB20560V3.1DOC |
на замовлення 14230 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 3023.69 грн |
| PSB2163NV3.1 |
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Виробник: Infineon Technologies
Description: ARCOFI AUDIO RINGING CODEC
Description: ARCOFI AUDIO RINGING CODEC
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| PEB20570FV3.1 |
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Виробник: Infineon Technologies
Description: LINE & PORT INTERFACE CONTROLLER
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Function: Line Card Controller
Interface: ISDN
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.13V ~ 3.47V
Current - Supply: 272.6mA
Supplier Device Package: PG-TQFP-100-3
Part Status: Active
Description: LINE & PORT INTERFACE CONTROLLER
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Function: Line Card Controller
Interface: ISDN
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.13V ~ 3.47V
Current - Supply: 272.6mA
Supplier Device Package: PG-TQFP-100-3
Part Status: Active
на замовлення 2571 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 1867.25 грн |
| PSB7280FV3.1D |
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Виробник: Infineon Technologies
Description: JOINT AUDIO DECODER-ENCODER
Packaging: Bulk
Part Status: Active
Description: JOINT AUDIO DECODER-ENCODER
Packaging: Bulk
Part Status: Active
на замовлення 80 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 2070.01 грн |
| PEB2096HV3.1 |
Виробник: Infineon Technologies
Description: OCTAT-P OCTAL TRANSCEICER
Description: OCTAT-P OCTAL TRANSCEICER
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| PEF22554HTV3.1 |
Виробник: Infineon Technologies
Description: QUADFALC FRAMER & LINE INTERFACE
Description: QUADFALC FRAMER & LINE INTERFACE
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| BC857AE6327 |
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Виробник: Infineon Technologies
Description: TRANS PNP 45V 0.1A SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23
Description: TRANS PNP 45V 0.1A SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7818+ | 2.83 грн |
| S2GOPRESSUREDPS310TOBO1 |
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Виробник: Infineon Technologies
Description: EVAL PRESSURE DPS310
Packaging: Box
Function: Pressure
Type: Sensor
Contents: Board(s)
Utilized IC / Part: DPS310
Platform: Shield2Go
Part Status: Active
Description: EVAL PRESSURE DPS310
Packaging: Box
Function: Pressure
Type: Sensor
Contents: Board(s)
Utilized IC / Part: DPS310
Platform: Shield2Go
Part Status: Active
на замовлення 157 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 560.26 грн |
| SPB100N04S2-04 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 100A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7220 pF @ 25 V
Description: MOSFET N-CH 40V 100A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7220 pF @ 25 V
на замовлення 433 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 167+ | 118.55 грн |
| T1080N02TOFXPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 600V 2000A DO200AA
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 140°C
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1078 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 2000 A
Voltage - Off State: 600 V
Description: SCR MODULE 600V 2000A DO200AA
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 140°C
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1078 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 2000 A
Voltage - Off State: 600 V
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| T580N02TOFXPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 600V 800A DO200AA
Packaging: Tray
Package / Case: TO-200AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6300A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 568 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 800 A
Voltage - Off State: 600 V
Description: SCR MODULE 600V 800A DO200AA
Packaging: Tray
Package / Case: TO-200AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6300A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 568 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 800 A
Voltage - Off State: 600 V
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