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S6J334EHEESE20000 S6J334EHEESE20000 Infineon Technologies Infineon-S6J3310_Series_S6J3320_Series_S6J3330_Series_S6J3340_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v17_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0edb39375e0e Description: TRAVEO-40NM
Packaging: Tray
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 4.16MB (4.16M x 8)
RAM Size: 544K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 112K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 35x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 144-TEQFP (20x20)
Number of I/O: 116
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S6J335DJBESE20000 Infineon Technologies Description: TRAVEO-40NM
Packaging: Tray
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S6J334DJEESE20000 Infineon Technologies Infineon-S6J3310_Series_S6J3320_Series_S6J3330_Series_S6J3340_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v17_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0edb39375e0e Description: TRAVEO-40NM
Packaging: Tray
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 3.0625MB (3.0625M x 8)
RAM Size: 544K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 112K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 48x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, CSIO, I²C, LINbus, UART/USART
Peripherals: DMA, I²S, LVD, POR, PWM, WDT
Supplier Device Package: 176-TEQFP (24x24)
Number of I/O: 150
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S6J334DJTESE20000 Infineon Technologies Infineon-S6J3310_Series_S6J3320_Series_S6J3330_Series_S6J3340_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v17_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0edb39375e0e Description: TRAVEO-40NM
Packaging: Tray
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 3.0625MB (3.0625M x 8)
RAM Size: 544K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 112K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 48x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, CSIO, I²C, LINbus, UART/USART
Peripherals: DMA, I²S, LVD, POR, PWM, WDT
Supplier Device Package: 176-TEQFP (24x24)
Number of I/O: 150
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IPP65R045C7XKSA1 IPP65R045C7XKSA1 Infineon Technologies DS_IPP65R045C7_2_1.pdf?folderId=db3a30431ff98815012019af55de3f2c&fileId=db3a30433e78ea82013e7942aa8701ff Description: MOSFET N-CH 650V 46A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.25mA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
на замовлення 140 шт:
термін постачання 21-31 дні (днів)
1+942.94 грн
50+512.64 грн
100+474.58 грн
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DEMOFX3U3VCAM01TOBO1 DEMOFX3U3VCAM01TOBO1 Infineon Technologies Infineon-EZ-USB_TM_FX3_camera_kit_DEMO_FX3_U3V_CAM01_Quick_start_guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c85c38e410185c3a5e7730011 Description: DEMO BOARD
Packaging: Bulk
Interface: I2C, SPI
Contents: Board(s)
Sensor Type: Image Sensor
Utilized IC / Part: OV5640
Supplied Contents: Board(s)
Embedded: No
Sensing Range: 5 Megapixel
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
1+20556.42 грн
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R5F51115ADNE#UA Infineon Technologies Description: R5F51115M32BFLA128(132M1.8V
Packaging: Tray
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R5F51135ADFM#3A Infineon Technologies Description: R5F51135M32BFLA128(132M1.8V
Packaging: Tray
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CY3280-22X45 CY3280-22X45 Infineon Technologies download Description: BOARD DEV CAPSENSE CTLR
Packaging: Box
Function: Sensor, CapSense® Touch
Type: Interface
Utilized IC / Part: CY8C22X45
Supplied Contents: Board(s), Cable(s), Accessories
Primary Attributes: Requires CY3280 Module Board
Embedded: Yes, MCU, 8-Bit
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IFCM10S60GDXKMA1 IFCM10S60GDXKMA1 Infineon Technologies Infineon-IFCM10S60GD-DS-v02_01-EN.pdf?fileId=5546d4625c167129015c53b93da87ce4 Description: IFPS MODULES
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 30 A
Voltage: 650 V
на замовлення 280 шт:
термін постачання 21-31 дні (днів)
1+1110.65 грн
10+759.62 грн
280+726.63 грн
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S29GL128S10DHI020 S29GL128S10DHI020 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
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CY7B9334-270JXC CY7B9334-270JXC Infineon Technologies Description: IC RECEIVER 28PLCC
Packaging: Tube
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Type: Receiver
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Protocol: Fibre Channel
Supplier Device Package: 28-PLCC (11.51x11.51)
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BSG0810NDIATMA1 BSG0810NDIATMA1 Infineon Technologies Infineon-BSG0810NDI-DS-v02_00-EN.pdf?fileId=5546d46250cc1fdf0150ec95de1142a9 Description: MOSFET 2N-CH 25V 19A/39A TISON8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 19A, 39A
Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 12V
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+79.45 грн
Мінімальне замовлення: 5000
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BSG0810NDIATMA1 BSG0810NDIATMA1 Infineon Technologies Infineon-BSG0810NDI-DS-v02_00-EN.pdf?fileId=5546d46250cc1fdf0150ec95de1142a9 Description: MOSFET 2N-CH 25V 19A/39A TISON8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 19A, 39A
Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 12V
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
на замовлення 7440 шт:
термін постачання 21-31 дні (днів)
2+249.00 грн
10+156.47 грн
100+108.89 грн
500+87.88 грн
Мінімальне замовлення: 2
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IRFR5305PBF IRFR5305PBF Infineon Technologies irfr5305pbf.pdf?fileId=5546d462533600a401535632522820ff Description: MOSFET P-CH 55V 31A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
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IRGS6B60KDTRLP IRGS6B60KDTRLP Infineon Technologies IRG%28B%2CS%2CSL%296B60KDPbF.pdf Description: IGBT 600V 13A 90W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
Supplier Device Package: D2PAK
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/215ns
Switching Energy: 110µJ (on), 135µJ (off)
Test Condition: 400V, 5A, 100Ohm, 15V
Gate Charge: 18.2 nC
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 26 A
Power - Max: 90 W
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IRGS6B60KDTRLP IRGS6B60KDTRLP Infineon Technologies IRG%28B%2CS%2CSL%296B60KDPbF.pdf Description: IGBT 600V 13A 90W D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
Supplier Device Package: D2PAK
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/215ns
Switching Energy: 110µJ (on), 135µJ (off)
Test Condition: 400V, 5A, 100Ohm, 15V
Gate Charge: 18.2 nC
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 26 A
Power - Max: 90 W
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IPL60R225CFD7AUMA1 IPL60R225CFD7AUMA1 Infineon Technologies Infineon-IPL60R225CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb2cea4ee2edd Description: MOSFET N-CH 600V 12A VSON-4
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.9A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Supplier Device Package: PG-VSON-4-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
2+232.74 грн
10+153.34 грн
100+111.06 грн
500+86.73 грн
1000+82.14 грн
Мінімальне замовлення: 2
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CY8C4127LCE-HV403T Infineon Technologies Description: IC MCU 32BIT 128KB FLASH
Packaging: Tape & Reel (TR)
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Program Memory Type: FLASH
EEPROM Size: 8K x 8
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 2x16/20b Sigma-Delta
Core Size: 32-Bit
Connectivity: LINbus
Peripherals: PWM
Number of I/O: 8
DigiKey Programmable: Not Verified
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CY8C4127LCE-HV403 Infineon Technologies Description: IC MCU 32BIT 128KB FLASH
Packaging: Tray
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Program Memory Type: FLASH
EEPROM Size: 8K x 8
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 2x16/20b Sigma-Delta
Core Size: 32-Bit
Connectivity: LINbus
Peripherals: DMA, PWM
Number of I/O: 8
DigiKey Programmable: Not Verified
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CY7C65630-56LTXIT CY7C65630-56LTXIT Infineon Technologies download Description: IC HUB CTLR 4PORT 56-QFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Function: Hub Controller
Interface: USB
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.15V ~ 3.45V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 56-QFN (8x8)
DigiKey Programmable: Not Verified
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CYPD2704-09FNXIT CYPD2704-09FNXIT Infineon Technologies Infineon-EZ-PD_CMG1_Datasheet_USB-C_EMCA_Controller-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee4bb726be8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file Description: IC USB-C CONTROLER THNDRBLT 9CSP
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, WLCSP
Mounting Type: Surface Mount
Interface: I2C, USB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Applications: USB Type C
Supplier Device Package: 9-WLCSP (1.38x1.35)
DigiKey Programmable: Not Verified
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CYPD2704-09FNXIT CYPD2704-09FNXIT Infineon Technologies Infineon-EZ-PD_CMG1_Datasheet_USB-C_EMCA_Controller-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee4bb726be8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file Description: IC USB-C CONTROLER THNDRBLT 9CSP
Packaging: Cut Tape (CT)
Package / Case: 9-UFBGA, WLCSP
Mounting Type: Surface Mount
Interface: I2C, USB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Applications: USB Type C
Supplier Device Package: 9-WLCSP (1.38x1.35)
DigiKey Programmable: Not Verified
на замовлення 2585 шт:
термін постачання 21-31 дні (днів)
3+144.61 грн
10+103.08 грн
25+93.87 грн
100+78.59 грн
250+74.07 грн
500+71.34 грн
1000+67.96 грн
Мінімальне замовлення: 3
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GLPB3460G1K1457XPSA1 Infineon Technologies Description: THYR / DIODE MODULE DK
Packaging: Tray
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XMC1402F064X0064AAXUMA1 XMC1402F064X0064AAXUMA1 Infineon Technologies Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: IC MCU 32BIT 64KB FLASH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-6
Number of I/O: 48
DigiKey Programmable: Not Verified
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TLE9180D21QKXUMA1 TLE9180D21QKXUMA1 Infineon Technologies Infineon-TLE9180D-21QK-DataSheet-v01_40-EN.pdf?fileId=8ac78c8c88ae21230188fccd2cd040e3 Description: IC GATE DRVR HALF-BRIDGE 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 60V
Input Type: TTL
Supplier Device Package: PG-LQFP-64-27
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 1A, 1A
DigiKey Programmable: Not Verified
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TLE9180D21QKXUMA1 TLE9180D21QKXUMA1 Infineon Technologies Infineon-TLE9180D-21QK-DataSheet-v01_40-EN.pdf?fileId=8ac78c8c88ae21230188fccd2cd040e3 Description: IC GATE DRVR HALF-BRIDGE 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 60V
Input Type: TTL
Supplier Device Package: PG-LQFP-64-27
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 1A, 1A
DigiKey Programmable: Not Verified
на замовлення 855 шт:
термін постачання 21-31 дні (днів)
1+462.06 грн
10+341.54 грн
25+315.71 грн
100+269.65 грн
250+256.95 грн
500+249.29 грн
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FS100R12KE3OTISBOSA1 Infineon Technologies Description: LPOWECONO
Packaging: Bulk
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AUIRF7342QCT Infineon Technologies Description: AUIRF7320V-15P-CHANNAUTOMOTIMOSF
Packaging: Bulk
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MAX6129BEUK25 Infineon Technologies Description: MAX61ULTRA-LOW-POWSERIVOLTAREFER
Packaging: Bulk
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IPD50P04P4L11AUMA1 Infineon Technologies Description: MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 85µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
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IPD50P04P413AUMA1 Infineon Technologies Description: MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 85µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3670 pF @ 25 V
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IPD50P04P4L11AUMA2 Infineon Technologies Description: MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 85µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
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IPD50P04P413AUMA2 Infineon Technologies Description: MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 85µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3670 pF @ 25 V
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CY8C4146AZE-S265T CY8C4146AZE-S265T Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8 Description: IC MCU 32BIT 64KB FLASH 64TQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 54
DigiKey Programmable: Not Verified
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S26KL256SDABHI020 S26KL256SDABHI020 Infineon Technologies Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Description: IC FLASH 256MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: Parallel
Access Time: 96 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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CY9AF142LBQN-G-AVE2 CY9AF142LBQN-G-AVE2 Infineon Technologies Infineon-CY9A140NB_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee002d66576&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 160KB FLASH 64QFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 51
DigiKey Programmable: Not Verified
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FF400R06KE3HOSA1 FF400R06KE3HOSA1 Infineon Technologies Infineon-FF400R06KE3-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b434a7a560dc Description: IGBT MOD 600V 500A 1250W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 5 mA
на замовлення 77 шт:
термін постачання 21-31 дні (днів)
1+9720.32 грн
10+8150.31 грн
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FF400R17KE4EHOSA1 FF400R17KE4EHOSA1 Infineon Technologies Infineon-FF400R17KE4_E-DS-v02_00-EN.pdf?fileId=5546d46255dd933d0155fcb33b8637e3 Description: IGBT MODULE 1700V 400A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
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IRS2817DSPBF Infineon Technologies Infineon-Infineon-IRS28x7DS-DS-v01_00-EN-DS-v01_01-EN.pdf?fileId=5546d462602a9dc801604a3dcbd308af Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Tube
DigiKey Programmable: Not Verified
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
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BTS5672EAUMA2 BTS5672EAUMA2 Infineon Technologies BTS5672E.pdf Description: IC LED DRVR RGLTR SPI 24A 36DSO
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 6
Frequency: 2MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Automotive
Current - Output / Channel: 24A
Internal Switch(s): Yes
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: PG-DSO-36-36
Dimming: SPI
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 28V
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CY9AF142LBPMC1-G-JNE2 CY9AF142LBPMC1-G-JNE2 Infineon Technologies Infineon-CY9A140NB_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee002d66576&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 160KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 51
DigiKey Programmable: Not Verified
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
1+757.26 грн
10+658.43 грн
25+627.83 грн
160+511.58 грн
320+488.59 грн
480+445.48 грн
960+381.64 грн
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TZ740N22KOFTIMHDSA1 Infineon Technologies Description: MODULE
Packaging: Bulk
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TZ740N22KOFB1TIMHDSA1 Infineon Technologies Description: MODULE
Packaging: Bulk
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CY62128ELL-45ZXA CY62128ELL-45ZXA Infineon Technologies Infineon-CY62128E_MoBL_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe7dc7321d Description: IC SRAM 1MBIT PARALLEL 32TSOP I
Packaging: Tube
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP I
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
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DZ1070N18KHPSA3 DZ1070N18KHPSA3 Infineon Technologies Infineon-DZ1070N18K-DS-v03_02-en_de.pdf?fileId=5546d4614755559a0147a145459a6377 Description: DIODE STD 1800V 1100A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1100A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.11 V @ 3000 A
Current - Reverse Leakage @ Vr: 150 mA @ 1800 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+33135.50 грн
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DZ1070N22KHPSA3 DZ1070N22KHPSA3 Infineon Technologies Infineon-DZ1070N22K-DS-v03_03-EN.pdf?fileId=5546d461464245d3014666990cf460f1 Description: DIODE GP 2.2KV 1100A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1100A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.11 V @ 3000 A
Current - Reverse Leakage @ Vr: 150 mA @ 2200 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+38906.94 грн
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DZ1070N26KHPSA1 DZ1070N26KHPSA1 Infineon Technologies Infineon-DZ1070N26K-DS-v03_01-EN.pdf?fileId=5546d46259d9a4bf015a219a683a284c Description: DIODE STD 2600V 1070A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1070A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2600 V
Voltage - Forward (Vf) (Max) @ If: 1.52 V @ 3400 A
Current - Reverse Leakage @ Vr: 150 mA @ 2600 V
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DZ1070N28KHPSA1 DZ1070N28KHPSA1 Infineon Technologies Infineon-DZ1070N28K-DS-v03_02-EN.pdf?fileId=5546d461464245d30146669acbfb60f5 Description: DIODE GP 2.8KV 1070A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1070A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2800 V
Voltage - Forward (Vf) (Max) @ If: 1.52 V @ 3400 A
Current - Reverse Leakage @ Vr: 150 mA @ 2800 V
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DZ1070N22KTIMHDSA1 Infineon Technologies Description: MODULE
Packaging: Bulk
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FF650R17IE4VBOSA1 FF650R17IE4VBOSA1 Infineon Technologies Infineon-FF650R17IE4V-DS-v02_00-en_de.pdf?fileId=5546d46145f1f3a40145f5885c310942 Description: IGBT MODULE 1700V 4150W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A
NTC Thermistor: Yes
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 4150 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
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FZ1200R33HE3BPSA1 FZ1200R33HE3BPSA1 Infineon Technologies Infineon-FZ1200R33HE3-DS-v03_01-en_de.pdf?fileId=db3a304327b8975001283eeed2944021 Description: IGBT MODULE 3300V 1200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 1200A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 13000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 210 nF @ 25 V
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PVX6012PBF PVX6012PBF Infineon Technologies pvx6012.pdf?fileId=5546d462533600a40153568456b52979 description Description: SSR RELAY SPST-NO 1A 0-280V
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm), 4 Leads
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 1 A
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 14-DIP
Voltage - Load: 0 V ~ 280 V
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PX7510EDSGCS10060XUMA1 Infineon Technologies Description: PX7510EDSG - PRIMERION PMBUS COM
Packaging: Bulk
DigiKey Programmable: Not Verified
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
207+106.47 грн
Мінімальне замовлення: 207
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IRG4PC50KDPBF IRG4PC50KDPBF Infineon Technologies irg4pc50kdpbf.pdf?fileId=5546d462533600a40153564461bb22ea description Description: IGBT 600V 52A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 63ns/150ns
Switching Energy: 1.61mJ (on), 840µJ (off)
Test Condition: 480V, 30A, 5Ohm, 15V
Gate Charge: 200 nC
Current - Collector (Ic) (Max): 52 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 104 A
Power - Max: 200 W
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IPDQ65R125CFD7XTMA1 IPDQ65R125CFD7XTMA1 Infineon Technologies Infineon-IPDQ65R125CFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186e4089b4677d5 Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 400 V
на замовлення 630 шт:
термін постачання 21-31 дні (днів)
2+261.83 грн
10+189.84 грн
25+174.19 грн
100+147.35 грн
250+139.66 грн
Мінімальне замовлення: 2
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IPDQ65R060CFD7XTMA1 IPDQ65R060CFD7XTMA1 Infineon Technologies Infineon-IPDQ65R060CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186e3ff7193778b Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 820µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
на замовлення 730 шт:
термін постачання 21-31 дні (днів)
1+489.44 грн
10+361.15 грн
25+333.64 грн
100+284.77 грн
250+271.25 грн
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IPDQ65R040CFD7XTMA1 IPDQ65R040CFD7XTMA1 Infineon Technologies Infineon-IPDQ65R040CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186e3ff5dfe7788 Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.8A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
на замовлення 744 шт:
термін постачання 21-31 дні (днів)
1+658.00 грн
10+490.67 грн
25+454.96 грн
100+390.13 грн
250+372.55 грн
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IPDQ65R029CFD7XTMA1 IPDQ65R029CFD7XTMA1 Infineon Technologies Infineon-IPDQ65R029CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186e047429d71e3 Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V
Power Dissipation (Max): 463W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
на замовлення 734 шт:
термін постачання 21-31 дні (днів)
1+868.50 грн
10+653.74 грн
25+608.12 грн
100+523.64 грн
250+501.21 грн
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IPDQ65R017CFD7XTMA1 IPDQ65R017CFD7XTMA1 Infineon Technologies Infineon-IPDQ65R017CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186e047325971e0 Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 61.6A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12338 pF @ 400 V
на замовлення 647 шт:
термін постачання 21-31 дні (днів)
1+1209.91 грн
10+921.78 грн
25+861.02 грн
100+745.36 грн
250+715.48 грн
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S6J334EHEESE20000 Infineon-S6J3310_Series_S6J3320_Series_S6J3330_Series_S6J3340_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v17_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0edb39375e0e
S6J334EHEESE20000
Виробник: Infineon Technologies
Description: TRAVEO-40NM
Packaging: Tray
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 4.16MB (4.16M x 8)
RAM Size: 544K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 112K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 35x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 144-TEQFP (20x20)
Number of I/O: 116
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S6J335DJBESE20000
Виробник: Infineon Technologies
Description: TRAVEO-40NM
Packaging: Tray
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S6J334DJEESE20000 Infineon-S6J3310_Series_S6J3320_Series_S6J3330_Series_S6J3340_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v17_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0edb39375e0e
Виробник: Infineon Technologies
Description: TRAVEO-40NM
Packaging: Tray
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 3.0625MB (3.0625M x 8)
RAM Size: 544K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 112K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 48x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, CSIO, I²C, LINbus, UART/USART
Peripherals: DMA, I²S, LVD, POR, PWM, WDT
Supplier Device Package: 176-TEQFP (24x24)
Number of I/O: 150
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S6J334DJTESE20000 Infineon-S6J3310_Series_S6J3320_Series_S6J3330_Series_S6J3340_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v17_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0edb39375e0e
Виробник: Infineon Technologies
Description: TRAVEO-40NM
Packaging: Tray
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 3.0625MB (3.0625M x 8)
RAM Size: 544K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 112K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 48x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, CSIO, I²C, LINbus, UART/USART
Peripherals: DMA, I²S, LVD, POR, PWM, WDT
Supplier Device Package: 176-TEQFP (24x24)
Number of I/O: 150
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IPP65R045C7XKSA1 DS_IPP65R045C7_2_1.pdf?folderId=db3a30431ff98815012019af55de3f2c&fileId=db3a30433e78ea82013e7942aa8701ff
IPP65R045C7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 46A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.25mA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
на замовлення 140 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+942.94 грн
50+512.64 грн
100+474.58 грн
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DEMOFX3U3VCAM01TOBO1 Infineon-EZ-USB_TM_FX3_camera_kit_DEMO_FX3_U3V_CAM01_Quick_start_guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c85c38e410185c3a5e7730011
DEMOFX3U3VCAM01TOBO1
Виробник: Infineon Technologies
Description: DEMO BOARD
Packaging: Bulk
Interface: I2C, SPI
Contents: Board(s)
Sensor Type: Image Sensor
Utilized IC / Part: OV5640
Supplied Contents: Board(s)
Embedded: No
Sensing Range: 5 Megapixel
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+20556.42 грн
В кошику  од. на суму  грн.
R5F51115ADNE#UA
Виробник: Infineon Technologies
Description: R5F51115M32BFLA128(132M1.8V
Packaging: Tray
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R5F51135ADFM#3A
Виробник: Infineon Technologies
Description: R5F51135M32BFLA128(132M1.8V
Packaging: Tray
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CY3280-22X45 download
CY3280-22X45
Виробник: Infineon Technologies
Description: BOARD DEV CAPSENSE CTLR
Packaging: Box
Function: Sensor, CapSense® Touch
Type: Interface
Utilized IC / Part: CY8C22X45
Supplied Contents: Board(s), Cable(s), Accessories
Primary Attributes: Requires CY3280 Module Board
Embedded: Yes, MCU, 8-Bit
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IFCM10S60GDXKMA1 Infineon-IFCM10S60GD-DS-v02_01-EN.pdf?fileId=5546d4625c167129015c53b93da87ce4
IFCM10S60GDXKMA1
Виробник: Infineon Technologies
Description: IFPS MODULES
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 30 A
Voltage: 650 V
на замовлення 280 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1110.65 грн
10+759.62 грн
280+726.63 грн
В кошику  од. на суму  грн.
S29GL128S10DHI020 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL128S10DHI020
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
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CY7B9334-270JXC
CY7B9334-270JXC
Виробник: Infineon Technologies
Description: IC RECEIVER 28PLCC
Packaging: Tube
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Type: Receiver
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Protocol: Fibre Channel
Supplier Device Package: 28-PLCC (11.51x11.51)
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BSG0810NDIATMA1 Infineon-BSG0810NDI-DS-v02_00-EN.pdf?fileId=5546d46250cc1fdf0150ec95de1142a9
BSG0810NDIATMA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 25V 19A/39A TISON8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 19A, 39A
Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 12V
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+79.45 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSG0810NDIATMA1 Infineon-BSG0810NDI-DS-v02_00-EN.pdf?fileId=5546d46250cc1fdf0150ec95de1142a9
BSG0810NDIATMA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 25V 19A/39A TISON8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 19A, 39A
Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 12V
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
на замовлення 7440 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+249.00 грн
10+156.47 грн
100+108.89 грн
500+87.88 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRFR5305PBF irfr5305pbf.pdf?fileId=5546d462533600a401535632522820ff
IRFR5305PBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 55V 31A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
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IRGS6B60KDTRLP IRG%28B%2CS%2CSL%296B60KDPbF.pdf
IRGS6B60KDTRLP
Виробник: Infineon Technologies
Description: IGBT 600V 13A 90W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
Supplier Device Package: D2PAK
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/215ns
Switching Energy: 110µJ (on), 135µJ (off)
Test Condition: 400V, 5A, 100Ohm, 15V
Gate Charge: 18.2 nC
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 26 A
Power - Max: 90 W
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IRGS6B60KDTRLP IRG%28B%2CS%2CSL%296B60KDPbF.pdf
IRGS6B60KDTRLP
Виробник: Infineon Technologies
Description: IGBT 600V 13A 90W D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
Supplier Device Package: D2PAK
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/215ns
Switching Energy: 110µJ (on), 135µJ (off)
Test Condition: 400V, 5A, 100Ohm, 15V
Gate Charge: 18.2 nC
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 26 A
Power - Max: 90 W
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IPL60R225CFD7AUMA1 Infineon-IPL60R225CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb2cea4ee2edd
IPL60R225CFD7AUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 12A VSON-4
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.9A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Supplier Device Package: PG-VSON-4-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+232.74 грн
10+153.34 грн
100+111.06 грн
500+86.73 грн
1000+82.14 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY8C4127LCE-HV403T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH
Packaging: Tape & Reel (TR)
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Program Memory Type: FLASH
EEPROM Size: 8K x 8
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 2x16/20b Sigma-Delta
Core Size: 32-Bit
Connectivity: LINbus
Peripherals: PWM
Number of I/O: 8
DigiKey Programmable: Not Verified
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CY8C4127LCE-HV403
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH
Packaging: Tray
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Program Memory Type: FLASH
EEPROM Size: 8K x 8
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 2x16/20b Sigma-Delta
Core Size: 32-Bit
Connectivity: LINbus
Peripherals: DMA, PWM
Number of I/O: 8
DigiKey Programmable: Not Verified
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CY7C65630-56LTXIT download
CY7C65630-56LTXIT
Виробник: Infineon Technologies
Description: IC HUB CTLR 4PORT 56-QFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Function: Hub Controller
Interface: USB
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.15V ~ 3.45V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 56-QFN (8x8)
DigiKey Programmable: Not Verified
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CYPD2704-09FNXIT Infineon-EZ-PD_CMG1_Datasheet_USB-C_EMCA_Controller-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee4bb726be8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file
CYPD2704-09FNXIT
Виробник: Infineon Technologies
Description: IC USB-C CONTROLER THNDRBLT 9CSP
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, WLCSP
Mounting Type: Surface Mount
Interface: I2C, USB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Applications: USB Type C
Supplier Device Package: 9-WLCSP (1.38x1.35)
DigiKey Programmable: Not Verified
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CYPD2704-09FNXIT Infineon-EZ-PD_CMG1_Datasheet_USB-C_EMCA_Controller-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee4bb726be8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file
CYPD2704-09FNXIT
Виробник: Infineon Technologies
Description: IC USB-C CONTROLER THNDRBLT 9CSP
Packaging: Cut Tape (CT)
Package / Case: 9-UFBGA, WLCSP
Mounting Type: Surface Mount
Interface: I2C, USB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Applications: USB Type C
Supplier Device Package: 9-WLCSP (1.38x1.35)
DigiKey Programmable: Not Verified
на замовлення 2585 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+144.61 грн
10+103.08 грн
25+93.87 грн
100+78.59 грн
250+74.07 грн
500+71.34 грн
1000+67.96 грн
Мінімальне замовлення: 3
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GLPB3460G1K1457XPSA1
Виробник: Infineon Technologies
Description: THYR / DIODE MODULE DK
Packaging: Tray
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XMC1402F064X0064AAXUMA1 Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1402F064X0064AAXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-6
Number of I/O: 48
DigiKey Programmable: Not Verified
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TLE9180D21QKXUMA1 Infineon-TLE9180D-21QK-DataSheet-v01_40-EN.pdf?fileId=8ac78c8c88ae21230188fccd2cd040e3
TLE9180D21QKXUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 60V
Input Type: TTL
Supplier Device Package: PG-LQFP-64-27
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 1A, 1A
DigiKey Programmable: Not Verified
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TLE9180D21QKXUMA1 Infineon-TLE9180D-21QK-DataSheet-v01_40-EN.pdf?fileId=8ac78c8c88ae21230188fccd2cd040e3
TLE9180D21QKXUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 60V
Input Type: TTL
Supplier Device Package: PG-LQFP-64-27
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 1A, 1A
DigiKey Programmable: Not Verified
на замовлення 855 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+462.06 грн
10+341.54 грн
25+315.71 грн
100+269.65 грн
250+256.95 грн
500+249.29 грн
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FS100R12KE3OTISBOSA1
Виробник: Infineon Technologies
Description: LPOWECONO
Packaging: Bulk
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AUIRF7342QCT
Виробник: Infineon Technologies
Description: AUIRF7320V-15P-CHANNAUTOMOTIMOSF
Packaging: Bulk
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MAX6129BEUK25
Виробник: Infineon Technologies
Description: MAX61ULTRA-LOW-POWSERIVOLTAREFER
Packaging: Bulk
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IPD50P04P4L11AUMA1
Виробник: Infineon Technologies
Description: MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 85µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
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IPD50P04P413AUMA1
Виробник: Infineon Technologies
Description: MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 85µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3670 pF @ 25 V
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IPD50P04P4L11AUMA2
Виробник: Infineon Technologies
Description: MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 85µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
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IPD50P04P413AUMA2
Виробник: Infineon Technologies
Description: MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 85µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3670 pF @ 25 V
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CY8C4146AZE-S265T Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8
CY8C4146AZE-S265T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 64TQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 54
DigiKey Programmable: Not Verified
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S26KL256SDABHI020 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
S26KL256SDABHI020
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: Parallel
Access Time: 96 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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CY9AF142LBQN-G-AVE2 Infineon-CY9A140NB_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee002d66576&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9AF142LBQN-G-AVE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 64QFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 51
DigiKey Programmable: Not Verified
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FF400R06KE3HOSA1 Infineon-FF400R06KE3-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b434a7a560dc
FF400R06KE3HOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 600V 500A 1250W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 5 mA
на замовлення 77 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+9720.32 грн
10+8150.31 грн
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FF400R17KE4EHOSA1 Infineon-FF400R17KE4_E-DS-v02_00-EN.pdf?fileId=5546d46255dd933d0155fcb33b8637e3
FF400R17KE4EHOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 400A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
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IRS2817DSPBF Infineon-Infineon-IRS28x7DS-DS-v01_00-EN-DS-v01_01-EN.pdf?fileId=5546d462602a9dc801604a3dcbd308af
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Tube
DigiKey Programmable: Not Verified
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
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BTS5672EAUMA2 BTS5672E.pdf
BTS5672EAUMA2
Виробник: Infineon Technologies
Description: IC LED DRVR RGLTR SPI 24A 36DSO
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 6
Frequency: 2MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Automotive
Current - Output / Channel: 24A
Internal Switch(s): Yes
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: PG-DSO-36-36
Dimming: SPI
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 28V
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CY9AF142LBPMC1-G-JNE2 Infineon-CY9A140NB_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee002d66576&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9AF142LBPMC1-G-JNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 51
DigiKey Programmable: Not Verified
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+757.26 грн
10+658.43 грн
25+627.83 грн
160+511.58 грн
320+488.59 грн
480+445.48 грн
960+381.64 грн
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TZ740N22KOFTIMHDSA1
Виробник: Infineon Technologies
Description: MODULE
Packaging: Bulk
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TZ740N22KOFB1TIMHDSA1
Виробник: Infineon Technologies
Description: MODULE
Packaging: Bulk
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CY62128ELL-45ZXA Infineon-CY62128E_MoBL_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe7dc7321d
CY62128ELL-45ZXA
Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32TSOP I
Packaging: Tube
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP I
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
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DZ1070N18KHPSA3 Infineon-DZ1070N18K-DS-v03_02-en_de.pdf?fileId=5546d4614755559a0147a145459a6377
DZ1070N18KHPSA3
Виробник: Infineon Technologies
Description: DIODE STD 1800V 1100A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1100A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.11 V @ 3000 A
Current - Reverse Leakage @ Vr: 150 mA @ 1800 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+33135.50 грн
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DZ1070N22KHPSA3 Infineon-DZ1070N22K-DS-v03_03-EN.pdf?fileId=5546d461464245d3014666990cf460f1
DZ1070N22KHPSA3
Виробник: Infineon Technologies
Description: DIODE GP 2.2KV 1100A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1100A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.11 V @ 3000 A
Current - Reverse Leakage @ Vr: 150 mA @ 2200 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+38906.94 грн
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DZ1070N26KHPSA1 Infineon-DZ1070N26K-DS-v03_01-EN.pdf?fileId=5546d46259d9a4bf015a219a683a284c
DZ1070N26KHPSA1
Виробник: Infineon Technologies
Description: DIODE STD 2600V 1070A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1070A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2600 V
Voltage - Forward (Vf) (Max) @ If: 1.52 V @ 3400 A
Current - Reverse Leakage @ Vr: 150 mA @ 2600 V
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DZ1070N28KHPSA1 Infineon-DZ1070N28K-DS-v03_02-EN.pdf?fileId=5546d461464245d30146669acbfb60f5
DZ1070N28KHPSA1
Виробник: Infineon Technologies
Description: DIODE GP 2.8KV 1070A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1070A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2800 V
Voltage - Forward (Vf) (Max) @ If: 1.52 V @ 3400 A
Current - Reverse Leakage @ Vr: 150 mA @ 2800 V
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DZ1070N22KTIMHDSA1
Виробник: Infineon Technologies
Description: MODULE
Packaging: Bulk
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FF650R17IE4VBOSA1 Infineon-FF650R17IE4V-DS-v02_00-en_de.pdf?fileId=5546d46145f1f3a40145f5885c310942
FF650R17IE4VBOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 4150W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A
NTC Thermistor: Yes
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 4150 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
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FZ1200R33HE3BPSA1 Infineon-FZ1200R33HE3-DS-v03_01-en_de.pdf?fileId=db3a304327b8975001283eeed2944021
FZ1200R33HE3BPSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 3300V 1200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 1200A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 13000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 210 nF @ 25 V
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PVX6012PBF description pvx6012.pdf?fileId=5546d462533600a40153568456b52979
PVX6012PBF
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 1A 0-280V
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm), 4 Leads
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 1 A
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 14-DIP
Voltage - Load: 0 V ~ 280 V
товару немає в наявності
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PX7510EDSGCS10060XUMA1
Виробник: Infineon Technologies
Description: PX7510EDSG - PRIMERION PMBUS COM
Packaging: Bulk
DigiKey Programmable: Not Verified
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
207+106.47 грн
Мінімальне замовлення: 207
В кошику  од. на суму  грн.
IRG4PC50KDPBF description irg4pc50kdpbf.pdf?fileId=5546d462533600a40153564461bb22ea
IRG4PC50KDPBF
Виробник: Infineon Technologies
Description: IGBT 600V 52A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 63ns/150ns
Switching Energy: 1.61mJ (on), 840µJ (off)
Test Condition: 480V, 30A, 5Ohm, 15V
Gate Charge: 200 nC
Current - Collector (Ic) (Max): 52 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 104 A
Power - Max: 200 W
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IPDQ65R125CFD7XTMA1 Infineon-IPDQ65R125CFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186e4089b4677d5
IPDQ65R125CFD7XTMA1
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 400 V
на замовлення 630 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+261.83 грн
10+189.84 грн
25+174.19 грн
100+147.35 грн
250+139.66 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPDQ65R060CFD7XTMA1 Infineon-IPDQ65R060CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186e3ff7193778b
IPDQ65R060CFD7XTMA1
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 820µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
на замовлення 730 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+489.44 грн
10+361.15 грн
25+333.64 грн
100+284.77 грн
250+271.25 грн
В кошику  од. на суму  грн.
IPDQ65R040CFD7XTMA1 Infineon-IPDQ65R040CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186e3ff5dfe7788
IPDQ65R040CFD7XTMA1
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.8A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
на замовлення 744 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+658.00 грн
10+490.67 грн
25+454.96 грн
100+390.13 грн
250+372.55 грн
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IPDQ65R029CFD7XTMA1 Infineon-IPDQ65R029CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186e047429d71e3
IPDQ65R029CFD7XTMA1
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V
Power Dissipation (Max): 463W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
на замовлення 734 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+868.50 грн
10+653.74 грн
25+608.12 грн
100+523.64 грн
250+501.21 грн
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IPDQ65R017CFD7XTMA1 Infineon-IPDQ65R017CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186e047325971e0
IPDQ65R017CFD7XTMA1
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 61.6A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12338 pF @ 400 V
на замовлення 647 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1209.91 грн
10+921.78 грн
25+861.02 грн
100+745.36 грн
250+715.48 грн
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