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16-3989-01 Infineon Technologies Description: INFINEON
Packaging: Bulk
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IR3859MTRPBF IR3859MTRPBF Infineon Technologies ir3859m.pdf?fileId=5546d462533600a4015355d5926c17fe Description: IC REG BUCK ADJ 9A 17PQFN
Packaging: Bulk
Package / Case: 17-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 9A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.65MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: 17-PQFN (4x5)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.9V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
на замовлення 2295 шт:
термін постачання 21-31 дні (днів)
149+153.89 грн
Мінімальне замовлення: 149
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AUIRF1324 AUIRF1324 Infineon Technologies IRSDS10899-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 24V 195A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 195A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7590 pF @ 24 V
Qualification: AEC-Q101
на замовлення 7842 шт:
термін постачання 21-31 дні (днів)
159+143.40 грн
Мінімальне замовлення: 159
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EVALTOLTDC36V2KWTOBO1 EVALTOLTDC36V2KWTOBO1 Infineon Technologies Infineon-Evaluation_board_EVAL_TOLT_DC36V_2KW-UserManual-v01_00-EN.pdf?fileId=8ac78c8c88704c7a01887770003a49c0 Description: THREE-PHASE POWER INVERTER BOARD
Packaging: Bulk
Contents: Board(s)
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+60336.70 грн
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CY27410LTXI-002 Infineon Technologies Description: IC SS CLOCK GENERATOR 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: CML, HCSL, LVCMOS, LVDS, LVPECL
Frequency - Max: 250MHz, 700MHz
Type: Spread Spectrum Clock Generator
Input: LVCMOS, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V, 2.25V ~ 2.75V, 3.13V ~ 3.46V
Ratio - Input:Output: 3:12
Differential - Input:Output: Yes/Yes
Supplier Device Package: 48-QFN (7x7)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
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CY27410LTXI-013 CY27410LTXI-013 Infineon Technologies Infineon-CY27410_4_PLL_SPREAD_SPECTRUM_CLOCK_GENERATOR-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecd11fe4748 Description: IC SS CLOCK GENERATOR 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: CML, HCSL, LVCMOS, LVDS, LVPECL
Frequency - Max: 700MHz
Type: Spread Spectrum Clock Generator
Input: LVCMOS, Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 3.46V
Ratio - Input:Output: 3:12
Differential - Input:Output: Yes/Yes
Supplier Device Package: 48-QFN (7x7)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CY7C1041CV33-12ZSXE CY7C1041CV33-12ZSXE Infineon Technologies Infineon-CY7C1041CV33_Automotive_4-Mbit_(256_K_16)_Static_RAM_Datasheet-AdditionalTechnicalInformation-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb80544500&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_ Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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IRGB4059DPBF IRGB4059DPBF Infineon Technologies IRGB4059DPbF.pdf description Description: IGBT 600V 8A 56W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Supplier Device Package: TO-220AB
IGBT Type: Trench
Td (on/off) @ 25°C: 25ns/65ns
Switching Energy: 35µJ (on), 75µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 9 nC
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 16 A
Power - Max: 56 W
на замовлення 420 шт:
термін постачання 21-31 дні (днів)
256+85.85 грн
Мінімальне замовлення: 256
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IRGB4059DPBF IRGB4059DPBF Infineon Technologies IRGB4059DPbF.pdf description Description: IGBT 600V 8A 56W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Supplier Device Package: TO-220AB
IGBT Type: Trench
Td (on/off) @ 25°C: 25ns/65ns
Switching Energy: 35µJ (on), 75µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 9 nC
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 16 A
Power - Max: 56 W
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CY9AF116MPMC-G-MNE1 CY9AF116MPMC-G-MNE1 Infineon Technologies Description: IC MCU 32BIT 80LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
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IPL65R1K5C6SATMA1 IPL65R1K5C6SATMA1 Infineon Technologies DS_IPL65R1K5C6S_2_0.pdf?fileId=5546d4614755559a01475d1bcc8e011a Description: MOSFET N-CH 650V 3A THIN-PAK
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 26.6W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
540+42.42 грн
Мінімальне замовлення: 540
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KP229E3201XTMA1 KP229E3201XTMA1 Infineon Technologies Description: IC PRESSURE SENSOR ABS DSOF8
Packaging: Tape & Reel (TR)
Applications: Board Mount
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+241.88 грн
Мінімальне замовлення: 1500
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KP229E3201XTMA1 KP229E3201XTMA1 Infineon Technologies Description: IC PRESSURE SENSOR ABS DSOF8
Packaging: Cut Tape (CT)
Applications: Board Mount
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1+459.98 грн
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TLE4284DV26ATMA1 TLE4284DV26ATMA1 Infineon Technologies TLE4284.pdf Description: IC REG LINEAR 2.6V 1A TO252-3-11
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.6 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3-11
Voltage - Output (Min/Fixed): 2.6V
Grade: Automotive
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
Qualification: AEC-Q100
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S25FL064P0XNFI003 S25FL064P0XNFI003 Infineon Technologies Infineon-S25FL064P_64-Mbit_3.0_V_SPI_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed4dcb1535c&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 64MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
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IAUCN04S6N013TATMA1 IAUCN04S6N013TATMA1 Infineon Technologies Infineon-IAUCN04S6N013T-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d018a1dcbe1a81ed4 Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 10-LSOP (0.216", 5.48mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Rds On (Max) @ Id, Vgs: 1.32mOhm @ 60A, 10V
Power Dissipation (Max): 133W (Tc)
Vgs(th) (Max) @ Id: 3V @ 60µA
Supplier Device Package: PG-LHDSO-10-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
Qualification: AEC-Q101
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IAUCN04S6N013TATMA1 IAUCN04S6N013TATMA1 Infineon Technologies Infineon-IAUCN04S6N013T-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d018a1dcbe1a81ed4 Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 10-LSOP (0.216", 5.48mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Rds On (Max) @ Id, Vgs: 1.32mOhm @ 60A, 10V
Power Dissipation (Max): 133W (Tc)
Vgs(th) (Max) @ Id: 3V @ 60µA
Supplier Device Package: PG-LHDSO-10-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1743 шт:
термін постачання 21-31 дні (днів)
2+162.35 грн
10+108.13 грн
100+77.15 грн
500+60.58 грн
1000+55.84 грн
Мінімальне замовлення: 2
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IRGP4620D-EPBF IRGP4620D-EPBF Infineon Technologies IRGx4620D%28-E%29PbF.pdf Description: IGBT 600V 32A 140W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 31ns/83ns
Switching Energy: 75µJ (on), 225µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 25 nC
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 36 A
Power - Max: 140 W
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
200+139.80 грн
Мінімальне замовлення: 200
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IRGP4620D-EPBF IRGP4620D-EPBF Infineon Technologies IRGx4620D%28-E%29PbF.pdf Description: IGBT 600V 32A 140W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 31ns/83ns
Switching Energy: 75µJ (on), 225µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 25 nC
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 36 A
Power - Max: 140 W
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IRGP4640PBF IRGP4640PBF Infineon Technologies IRGP4640%28-E%29PBF.pdf Description: IGBT 600V 65A 250W TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 40ns/105ns
Switching Energy: 100µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 250 W
на замовлення 145 шт:
термін постачання 21-31 дні (днів)
145+153.12 грн
Мінімальне замовлення: 145
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IRGP4640PBF IRGP4640PBF Infineon Technologies IRGP4640%28-E%29PBF.pdf Description: IGBT 600V 65A 250W TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 40ns/105ns
Switching Energy: 100µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 250 W
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IRGP4630D-EPBF IRGP4630D-EPBF Infineon Technologies IRGx4630D%28-E%29PbF.pdf Description: IGBT 600V 47A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 18A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 40ns/105ns
Switching Energy: 95µJ (on), 350µJ (off)
Test Condition: 400V, 18A, 22Ohm, 15V
Gate Charge: 35 nC
Current - Collector (Ic) (Max): 47 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 54 A
Power - Max: 206 W
на замовлення 150 шт:
термін постачання 21-31 дні (днів)
150+162.96 грн
Мінімальне замовлення: 150
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AUIRGP66524D0 AUIRGP66524D0 Infineon Technologies AUIRGx66524D0.pdf Description: IGBT 600V 60A TO-247AC
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 176 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 30ns/75ns
Switching Energy: 915µJ (on), 280µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 80 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 214 W
на замовлення 605 шт:
термін постачання 21-31 дні (днів)
71+324.53 грн
Мінімальне замовлення: 71
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IRGP4660D-EPBF IRGP4660D-EPBF Infineon Technologies irgp4660dpbf.pdf?fileId=5546d462533600a40153565680d52478 Description: IGBT 600V 100A TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 115 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 48A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 60ns/145ns
Switching Energy: 625µJ (on), 1.28mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 330 W
на замовлення 723 шт:
термін постачання 21-31 дні (днів)
52+429.94 грн
Мінімальне замовлення: 52
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IRGP4660D-EPBF IRGP4660D-EPBF Infineon Technologies irgp4660dpbf.pdf?fileId=5546d462533600a40153565680d52478 Description: IGBT 600V 100A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 115 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 48A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 60ns/145ns
Switching Energy: 625µJ (on), 1.28mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 330 W
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IRGR2B60KDPBF IRGR2B60KDPBF Infineon Technologies IRGR2B60KDPBF.pdf Description: IGBT NPT 600V 6.3A TO-252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 2A
Supplier Device Package: TO-252AA (DPAK)
IGBT Type: NPT
Td (on/off) @ 25°C: 11ns/150ns
Switching Energy: 74µJ (on), 39µJ (off)
Test Condition: 400V, 2A, 100Ohm, 15V
Gate Charge: 12 nC
Current - Collector (Ic) (Max): 6.3 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 8 A
Power - Max: 35 W
на замовлення 933 шт:
термін постачання 21-31 дні (днів)
334+66.06 грн
Мінімальне замовлення: 334
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S99GL512S0180 Infineon Technologies Description: INFINEON
Packaging: Bulk
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S99GL512S10DHI010 Infineon Technologies Description: INFINEON
Packaging: Bulk
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CY7C1009D-10VXIT CY7C1009D-10VXIT Infineon Technologies download Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Tape & Reel (TR)
Package / Case: 32-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CY7C1009D-10VXIT CY7C1009D-10VXIT Infineon Technologies download Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Cut Tape (CT)
Package / Case: 32-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CY7C1010DV33-10VXI CY7C1010DV33-10VXI Infineon Technologies download Description: IC SRAM 2MBIT PARALLEL 36SOJ
Packaging: Bulk
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
на замовлення 3911 шт:
термін постачання 21-31 дні (днів)
90+248.87 грн
Мінімальне замовлення: 90
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CY62157DV30LL-55ZSXI CY62157DV30LL-55ZSXI Infineon Technologies CY62157DV30.pdf Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Bag
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
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S25FL128SDSMFBG10 S25FL128SDSMFBG10 Infineon Technologies Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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FZ400R12KS4PHOSA1 FZ400R12KS4PHOSA1 Infineon Technologies Infineon-FZ400R12KS4P-DS-v02_00-EN.pdf?fileId=5546d4625a888733015a8e003d864bc4 Description: IGBT MODULE 1200V 800A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 800 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
на замовлення 138 шт:
термін постачання 21-31 дні (днів)
2+11763.26 грн
Мінімальне замовлення: 2
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FF2400R12IP7BPSA1 Infineon Technologies Infineon-FF2MR12KM1H-DataSheet-v00_20-EN.pdf?fileId=8ac78c8c8afe5bd0018b18a5843737d9 Description: IGBT MODULE
Packaging: Bulk
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+64633.27 грн
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FF2400R12IP7PBPSA1 FF2400R12IP7PBPSA1 Infineon Technologies FF2400R12IP7P_Rev1.00_6-9-23.pdf Description: PP IHM I
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
NTC Thermistor: No
Supplier Device Package: AG-PRIME3+
Current - Collector (Ic) (Max): 2400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
1+68375.17 грн
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FD1400R12IP4DBOSA1 Infineon Technologies Infineon-FD1400R12IP4D-DS-v02_03-en_de.pdf?fileId=db3a30431ddc9372011e16acde0e370d Description: MOSFET
Packaging: Bulk
на замовлення 76 шт:
термін постачання 21-31 дні (днів)
1+49786.65 грн
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FF1400R12IP4B60BOSA1 Infineon Technologies Description: PP IHM I
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 1.4kA
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 7650 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 82000 pF @ 25 V
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FF1400R12IP4PB60BPSA1 Infineon Technologies Description: PP IHM I
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 1.4kA
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 7650 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 82000 pF @ 25 V
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FZ2400R12HP4PHPSA1 Infineon Technologies Description: IGBT MOD 1200V 3460A AGIHMB130-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 2.4kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB130-2
IGBT Type: Trench
Current - Collector (Ic) (Max): 3460 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 12500 W
Current - Collector Cutoff (Max): 5 mA
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FZ2400R12HE4PB9HPSA1 FZ2400R12HE4PB9HPSA1 Infineon Technologies Infineon-FZ2400R12HE4P_B9-DS-v03_00-EN.pdf?fileId=5546d462576f34750157dd4894b9282a Description: IGBT MODULE 1200V 2400A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 2400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 2400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
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ISZ330N12LM6ATMA1 ISZ330N12LM6ATMA1 Infineon Technologies Infineon-ISZ330N12LM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185c27a471e5375 Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 9A, 10V
Power Dissipation (Max): 2.5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 60 V
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ISZ330N12LM6ATMA1 ISZ330N12LM6ATMA1 Infineon Technologies Infineon-ISZ330N12LM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185c27a471e5375 Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 9A, 10V
Power Dissipation (Max): 2.5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 60 V
на замовлення 3627 шт:
термін постачання 21-31 дні (днів)
3+120.96 грн
10+74.26 грн
100+49.68 грн
500+37.08 грн
1000+33.30 грн
Мінімальне замовлення: 3
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CY8C4046LQI-T452 CY8C4046LQI-T452 Infineon Technologies Infineon-PSoC_4000T_MCU_datasheet-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c8a44f57b018a799f5fb53b5d Description: IC MCU 32BIT 64KB FLASH 24UFQFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, Microwire, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, POR, PWM, WDT
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 19
на замовлення 734 шт:
термін постачання 21-31 дні (днів)
2+288.88 грн
10+210.44 грн
25+193.39 грн
100+163.94 грн
490+150.65 грн
Мінімальне замовлення: 2
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DD220N22SHPSA1 DD220N22SHPSA1 Infineon Technologies Infineon-DD220N22S-DS-v03_01-EN.pdf?fileId=5546d462636cc8fb016390f2b2ab3f5a Description: LA-T-BOND MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 130°C (TC)
Structure: Series Connection - SCR/Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 5750A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 273 A
Current - On State (It (RMS)) (Max): 275 A
Voltage - Off State: 2.2 kV
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
1+4154.92 грн
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S25FS256TDPBHI113 S25FS256TDPBHI113 Infineon Technologies Infineon-S25FS256T_256Mb_SEMPER_Nano_Flash_Quad_SPI_1-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c80027ecd0180740c5a46707a&da=t Description: 256MB SEMPER NANO FLASH
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 2.3ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 32M x 8
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S25FS256TDPBHI113 S25FS256TDPBHI113 Infineon Technologies Infineon-S25FS256T_256Mb_SEMPER_Nano_Flash_Quad_SPI_1-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c80027ecd0180740c5a46707a&da=t Description: 256MB SEMPER NANO FLASH
Packaging: Cut Tape (CT)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 2.3ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 32M x 8
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
1+443.27 грн
10+389.37 грн
25+381.91 грн
50+355.79 грн
100+319.25 грн
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EVAL6EDL7141FOC3SHTOBO1 EVAL6EDL7141FOC3SHTOBO1 Infineon Technologies Infineon-Evaluation_Board_EVAL_6EDL7141_FOC_3SH-UserManual-v01_00-EN.pdf?fileId=8ac78c8c82ce566401830db3784605f9 Description: EVAL BOARD FOR 6EDL7141
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 6EDL7141
Supplied Contents: Board(s)
Primary Attributes: 3 Half Bridge Drivers
Embedded: No
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S25FS512SFABHM210 Infineon Technologies Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 102 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Write Cycle Time - Word, Page: 2ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S26HS01GTGABHM023 S26HS01GTGABHM023 Infineon Technologies Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54 Description: IC FLASH 1GBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (8x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 5.45 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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XC228796F66LACKXQMA1 Infineon Technologies Description: IC MCU 16/32BT 768KB FLSH 144QFP
Packaging: Tray
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 83K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 24x8/10/12b SAR
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, FIFO, I2C, LINbus, QSPI, SPI, SSC, UART/USART, USI
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 118
DigiKey Programmable: Not Verified
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CY7C1345G-100AXIT CY7C1345G-100AXIT Infineon Technologies Infineon-CY7C1345G_4-Mbit_(128_K_36)_Flow-Through_Sync_SRAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec4242a398f Description: IC SRAM 4.5MBIT PAR 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.15V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 8 ns
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
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CY7C1345G-100AXC CY7C1345G-100AXC Infineon Technologies Infineon-CY7C1345G_4-Mbit_(128_K_36)_Flow-Through_Sync_SRAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec4242a398f Description: IC SRAM 4.5MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.15V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 8 ns
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
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CY7C1345G-100AXCT CY7C1345G-100AXCT Infineon Technologies Infineon-CY7C1345G_4-Mbit_(128_K_36)_Flow-Through_Sync_SRAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec4242a398f Description: IC SRAM 4.5MBIT PAR 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.15V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 8 ns
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
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CY7C1059DV33-12ZSXQT CY7C1059DV33-12ZSXQT Infineon Technologies Infineon-CY7C1059DV33_8-Mbit_(1M_8)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2e10737db Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
1000+897.85 грн
Мінімальне замовлення: 1000
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CY7C1059DV33-12ZSXQT CY7C1059DV33-12ZSXQT Infineon Technologies Infineon-CY7C1059DV33_8-Mbit_(1M_8)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2e10737db Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Cut Tape (CT)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
на замовлення 936 шт:
термін постачання 21-31 дні (днів)
1+871.41 грн
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CY7C1059DV33-12ZSXQ CY7C1059DV33-12ZSXQ Infineon Technologies Infineon-CY7C1059DV33_8-Mbit_(1M_8)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2e10737db Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Tube
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
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S25FL128SDPBHVC13 Infineon Technologies Description: STD SPI
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Write Cycle Time - Word, Page: 750µs
Memory Interface: SPI - Quad I/O
Access Time: 6.5 ns
Memory Organization: 16M x 8
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MB39C022GPN-G-ERE1 MB39C022GPN-G-ERE1 Infineon Technologies download Description: IC REG DL BUCK/LINEAR SYNC 10SON
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V ~ 5.5V
Frequency - Switching: 2MHz
Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Supplier Device Package: 10-SON (3x3)
Voltage/Current - Output 1: 0.8V ~ 4.5V, 600mA
Voltage/Current - Output 2: 3.3V, 300mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 2
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CY7C1061G-10ZXI CY7C1061G-10ZXI Infineon Technologies Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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16-3989-01
Виробник: Infineon Technologies
Description: INFINEON
Packaging: Bulk
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IR3859MTRPBF ir3859m.pdf?fileId=5546d462533600a4015355d5926c17fe
IR3859MTRPBF
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 9A 17PQFN
Packaging: Bulk
Package / Case: 17-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 9A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.65MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: 17-PQFN (4x5)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.9V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
на замовлення 2295 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
149+153.89 грн
Мінімальне замовлення: 149
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AUIRF1324 IRSDS10899-1.pdf?t.download=true&u=5oefqw
AUIRF1324
Виробник: Infineon Technologies
Description: MOSFET N-CH 24V 195A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 195A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7590 pF @ 24 V
Qualification: AEC-Q101
на замовлення 7842 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
159+143.40 грн
Мінімальне замовлення: 159
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EVALTOLTDC36V2KWTOBO1 Infineon-Evaluation_board_EVAL_TOLT_DC36V_2KW-UserManual-v01_00-EN.pdf?fileId=8ac78c8c88704c7a01887770003a49c0
EVALTOLTDC36V2KWTOBO1
Виробник: Infineon Technologies
Description: THREE-PHASE POWER INVERTER BOARD
Packaging: Bulk
Contents: Board(s)
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+60336.70 грн
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CY27410LTXI-002
Виробник: Infineon Technologies
Description: IC SS CLOCK GENERATOR 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: CML, HCSL, LVCMOS, LVDS, LVPECL
Frequency - Max: 250MHz, 700MHz
Type: Spread Spectrum Clock Generator
Input: LVCMOS, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V, 2.25V ~ 2.75V, 3.13V ~ 3.46V
Ratio - Input:Output: 3:12
Differential - Input:Output: Yes/Yes
Supplier Device Package: 48-QFN (7x7)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
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CY27410LTXI-013 Infineon-CY27410_4_PLL_SPREAD_SPECTRUM_CLOCK_GENERATOR-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecd11fe4748
CY27410LTXI-013
Виробник: Infineon Technologies
Description: IC SS CLOCK GENERATOR 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: CML, HCSL, LVCMOS, LVDS, LVPECL
Frequency - Max: 700MHz
Type: Spread Spectrum Clock Generator
Input: LVCMOS, Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 3.46V
Ratio - Input:Output: 3:12
Differential - Input:Output: Yes/Yes
Supplier Device Package: 48-QFN (7x7)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CY7C1041CV33-12ZSXE Infineon-CY7C1041CV33_Automotive_4-Mbit_(256_K_16)_Static_RAM_Datasheet-AdditionalTechnicalInformation-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb80544500&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_
CY7C1041CV33-12ZSXE
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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IRGB4059DPBF description IRGB4059DPbF.pdf
IRGB4059DPBF
Виробник: Infineon Technologies
Description: IGBT 600V 8A 56W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Supplier Device Package: TO-220AB
IGBT Type: Trench
Td (on/off) @ 25°C: 25ns/65ns
Switching Energy: 35µJ (on), 75µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 9 nC
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 16 A
Power - Max: 56 W
на замовлення 420 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
256+85.85 грн
Мінімальне замовлення: 256
В кошику  од. на суму  грн.
IRGB4059DPBF description IRGB4059DPbF.pdf
IRGB4059DPBF
Виробник: Infineon Technologies
Description: IGBT 600V 8A 56W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Supplier Device Package: TO-220AB
IGBT Type: Trench
Td (on/off) @ 25°C: 25ns/65ns
Switching Energy: 35µJ (on), 75µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 9 nC
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 16 A
Power - Max: 56 W
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CY9AF116MPMC-G-MNE1
CY9AF116MPMC-G-MNE1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 80LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
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IPL65R1K5C6SATMA1 DS_IPL65R1K5C6S_2_0.pdf?fileId=5546d4614755559a01475d1bcc8e011a
IPL65R1K5C6SATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 3A THIN-PAK
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 26.6W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
540+42.42 грн
Мінімальне замовлення: 540
В кошику  од. на суму  грн.
KP229E3201XTMA1
KP229E3201XTMA1
Виробник: Infineon Technologies
Description: IC PRESSURE SENSOR ABS DSOF8
Packaging: Tape & Reel (TR)
Applications: Board Mount
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+241.88 грн
Мінімальне замовлення: 1500
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KP229E3201XTMA1
KP229E3201XTMA1
Виробник: Infineon Technologies
Description: IC PRESSURE SENSOR ABS DSOF8
Packaging: Cut Tape (CT)
Applications: Board Mount
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+459.98 грн
В кошику  од. на суму  грн.
TLE4284DV26ATMA1 TLE4284.pdf
TLE4284DV26ATMA1
Виробник: Infineon Technologies
Description: IC REG LINEAR 2.6V 1A TO252-3-11
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.6 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3-11
Voltage - Output (Min/Fixed): 2.6V
Grade: Automotive
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
Qualification: AEC-Q100
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S25FL064P0XNFI003 Infineon-S25FL064P_64-Mbit_3.0_V_SPI_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed4dcb1535c&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL064P0XNFI003
Виробник: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
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IAUCN04S6N013TATMA1 Infineon-IAUCN04S6N013T-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d018a1dcbe1a81ed4
IAUCN04S6N013TATMA1
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 10-LSOP (0.216", 5.48mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Rds On (Max) @ Id, Vgs: 1.32mOhm @ 60A, 10V
Power Dissipation (Max): 133W (Tc)
Vgs(th) (Max) @ Id: 3V @ 60µA
Supplier Device Package: PG-LHDSO-10-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
Qualification: AEC-Q101
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IAUCN04S6N013TATMA1 Infineon-IAUCN04S6N013T-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d018a1dcbe1a81ed4
IAUCN04S6N013TATMA1
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 10-LSOP (0.216", 5.48mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Rds On (Max) @ Id, Vgs: 1.32mOhm @ 60A, 10V
Power Dissipation (Max): 133W (Tc)
Vgs(th) (Max) @ Id: 3V @ 60µA
Supplier Device Package: PG-LHDSO-10-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1743 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+162.35 грн
10+108.13 грн
100+77.15 грн
500+60.58 грн
1000+55.84 грн
Мінімальне замовлення: 2
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IRGP4620D-EPBF IRGx4620D%28-E%29PbF.pdf
IRGP4620D-EPBF
Виробник: Infineon Technologies
Description: IGBT 600V 32A 140W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 31ns/83ns
Switching Energy: 75µJ (on), 225µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 25 nC
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 36 A
Power - Max: 140 W
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
200+139.80 грн
Мінімальне замовлення: 200
В кошику  од. на суму  грн.
IRGP4620D-EPBF IRGx4620D%28-E%29PbF.pdf
IRGP4620D-EPBF
Виробник: Infineon Technologies
Description: IGBT 600V 32A 140W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 31ns/83ns
Switching Energy: 75µJ (on), 225µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 25 nC
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 36 A
Power - Max: 140 W
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IRGP4640PBF IRGP4640%28-E%29PBF.pdf
IRGP4640PBF
Виробник: Infineon Technologies
Description: IGBT 600V 65A 250W TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 40ns/105ns
Switching Energy: 100µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 250 W
на замовлення 145 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
145+153.12 грн
Мінімальне замовлення: 145
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IRGP4640PBF IRGP4640%28-E%29PBF.pdf
IRGP4640PBF
Виробник: Infineon Technologies
Description: IGBT 600V 65A 250W TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 40ns/105ns
Switching Energy: 100µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 250 W
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IRGP4630D-EPBF IRGx4630D%28-E%29PbF.pdf
IRGP4630D-EPBF
Виробник: Infineon Technologies
Description: IGBT 600V 47A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 18A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 40ns/105ns
Switching Energy: 95µJ (on), 350µJ (off)
Test Condition: 400V, 18A, 22Ohm, 15V
Gate Charge: 35 nC
Current - Collector (Ic) (Max): 47 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 54 A
Power - Max: 206 W
на замовлення 150 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
150+162.96 грн
Мінімальне замовлення: 150
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AUIRGP66524D0 AUIRGx66524D0.pdf
AUIRGP66524D0
Виробник: Infineon Technologies
Description: IGBT 600V 60A TO-247AC
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 176 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 30ns/75ns
Switching Energy: 915µJ (on), 280µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 80 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 214 W
на замовлення 605 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
71+324.53 грн
Мінімальне замовлення: 71
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IRGP4660D-EPBF irgp4660dpbf.pdf?fileId=5546d462533600a40153565680d52478
IRGP4660D-EPBF
Виробник: Infineon Technologies
Description: IGBT 600V 100A TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 115 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 48A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 60ns/145ns
Switching Energy: 625µJ (on), 1.28mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 330 W
на замовлення 723 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
52+429.94 грн
Мінімальне замовлення: 52
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IRGP4660D-EPBF irgp4660dpbf.pdf?fileId=5546d462533600a40153565680d52478
IRGP4660D-EPBF
Виробник: Infineon Technologies
Description: IGBT 600V 100A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 115 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 48A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 60ns/145ns
Switching Energy: 625µJ (on), 1.28mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 330 W
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IRGR2B60KDPBF IRGR2B60KDPBF.pdf
IRGR2B60KDPBF
Виробник: Infineon Technologies
Description: IGBT NPT 600V 6.3A TO-252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 2A
Supplier Device Package: TO-252AA (DPAK)
IGBT Type: NPT
Td (on/off) @ 25°C: 11ns/150ns
Switching Energy: 74µJ (on), 39µJ (off)
Test Condition: 400V, 2A, 100Ohm, 15V
Gate Charge: 12 nC
Current - Collector (Ic) (Max): 6.3 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 8 A
Power - Max: 35 W
на замовлення 933 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
334+66.06 грн
Мінімальне замовлення: 334
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S99GL512S0180
Виробник: Infineon Technologies
Description: INFINEON
Packaging: Bulk
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S99GL512S10DHI010
Виробник: Infineon Technologies
Description: INFINEON
Packaging: Bulk
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CY7C1009D-10VXIT download
CY7C1009D-10VXIT
Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Tape & Reel (TR)
Package / Case: 32-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CY7C1009D-10VXIT download
CY7C1009D-10VXIT
Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Cut Tape (CT)
Package / Case: 32-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CY7C1010DV33-10VXI download
CY7C1010DV33-10VXI
Виробник: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 36SOJ
Packaging: Bulk
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
на замовлення 3911 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
90+248.87 грн
Мінімальне замовлення: 90
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CY62157DV30LL-55ZSXI CY62157DV30.pdf
CY62157DV30LL-55ZSXI
Виробник: Infineon Technologies
Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Bag
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
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S25FL128SDSMFBG10 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SDSMFBG10
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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FZ400R12KS4PHOSA1 Infineon-FZ400R12KS4P-DS-v02_00-EN.pdf?fileId=5546d4625a888733015a8e003d864bc4
FZ400R12KS4PHOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 800A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 800 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
на замовлення 138 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+11763.26 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FF2400R12IP7BPSA1 Infineon-FF2MR12KM1H-DataSheet-v00_20-EN.pdf?fileId=8ac78c8c8afe5bd0018b18a5843737d9
Виробник: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+64633.27 грн
В кошику  од. на суму  грн.
FF2400R12IP7PBPSA1 FF2400R12IP7P_Rev1.00_6-9-23.pdf
FF2400R12IP7PBPSA1
Виробник: Infineon Technologies
Description: PP IHM I
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
NTC Thermistor: No
Supplier Device Package: AG-PRIME3+
Current - Collector (Ic) (Max): 2400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+68375.17 грн
В кошику  од. на суму  грн.
FD1400R12IP4DBOSA1 Infineon-FD1400R12IP4D-DS-v02_03-en_de.pdf?fileId=db3a30431ddc9372011e16acde0e370d
Виробник: Infineon Technologies
Description: MOSFET
Packaging: Bulk
на замовлення 76 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+49786.65 грн
В кошику  од. на суму  грн.
FF1400R12IP4B60BOSA1
Виробник: Infineon Technologies
Description: PP IHM I
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 1.4kA
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 7650 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 82000 pF @ 25 V
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FF1400R12IP4PB60BPSA1
Виробник: Infineon Technologies
Description: PP IHM I
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 1.4kA
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 7650 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 82000 pF @ 25 V
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FZ2400R12HP4PHPSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 3460A AGIHMB130-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 2.4kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB130-2
IGBT Type: Trench
Current - Collector (Ic) (Max): 3460 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 12500 W
Current - Collector Cutoff (Max): 5 mA
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FZ2400R12HE4PB9HPSA1 Infineon-FZ2400R12HE4P_B9-DS-v03_00-EN.pdf?fileId=5546d462576f34750157dd4894b9282a
FZ2400R12HE4PB9HPSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 2400A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 2400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 2400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
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ISZ330N12LM6ATMA1 Infineon-ISZ330N12LM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185c27a471e5375
ISZ330N12LM6ATMA1
Виробник: Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 9A, 10V
Power Dissipation (Max): 2.5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 60 V
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ISZ330N12LM6ATMA1 Infineon-ISZ330N12LM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185c27a471e5375
ISZ330N12LM6ATMA1
Виробник: Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 9A, 10V
Power Dissipation (Max): 2.5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 60 V
на замовлення 3627 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+120.96 грн
10+74.26 грн
100+49.68 грн
500+37.08 грн
1000+33.30 грн
Мінімальне замовлення: 3
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CY8C4046LQI-T452 Infineon-PSoC_4000T_MCU_datasheet-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c8a44f57b018a799f5fb53b5d
CY8C4046LQI-T452
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 24UFQFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, Microwire, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, POR, PWM, WDT
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 19
на замовлення 734 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+288.88 грн
10+210.44 грн
25+193.39 грн
100+163.94 грн
490+150.65 грн
Мінімальне замовлення: 2
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DD220N22SHPSA1 Infineon-DD220N22S-DS-v03_01-EN.pdf?fileId=5546d462636cc8fb016390f2b2ab3f5a
DD220N22SHPSA1
Виробник: Infineon Technologies
Description: LA-T-BOND MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 130°C (TC)
Structure: Series Connection - SCR/Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 5750A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 273 A
Current - On State (It (RMS)) (Max): 275 A
Voltage - Off State: 2.2 kV
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4154.92 грн
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S25FS256TDPBHI113 Infineon-S25FS256T_256Mb_SEMPER_Nano_Flash_Quad_SPI_1-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c80027ecd0180740c5a46707a&da=t
S25FS256TDPBHI113
Виробник: Infineon Technologies
Description: 256MB SEMPER NANO FLASH
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 2.3ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 32M x 8
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S25FS256TDPBHI113 Infineon-S25FS256T_256Mb_SEMPER_Nano_Flash_Quad_SPI_1-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c80027ecd0180740c5a46707a&da=t
S25FS256TDPBHI113
Виробник: Infineon Technologies
Description: 256MB SEMPER NANO FLASH
Packaging: Cut Tape (CT)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 2.3ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 32M x 8
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+443.27 грн
10+389.37 грн
25+381.91 грн
50+355.79 грн
100+319.25 грн
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EVAL6EDL7141FOC3SHTOBO1 Infineon-Evaluation_Board_EVAL_6EDL7141_FOC_3SH-UserManual-v01_00-EN.pdf?fileId=8ac78c8c82ce566401830db3784605f9
EVAL6EDL7141FOC3SHTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR 6EDL7141
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 6EDL7141
Supplied Contents: Board(s)
Primary Attributes: 3 Half Bridge Drivers
Embedded: No
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S25FS512SFABHM210
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 102 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Write Cycle Time - Word, Page: 2ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S26HS01GTGABHM023 Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54
S26HS01GTGABHM023
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (8x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 5.45 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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XC228796F66LACKXQMA1
Виробник: Infineon Technologies
Description: IC MCU 16/32BT 768KB FLSH 144QFP
Packaging: Tray
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 83K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 24x8/10/12b SAR
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, FIFO, I2C, LINbus, QSPI, SPI, SSC, UART/USART, USI
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 118
DigiKey Programmable: Not Verified
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CY7C1345G-100AXIT Infineon-CY7C1345G_4-Mbit_(128_K_36)_Flow-Through_Sync_SRAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec4242a398f
CY7C1345G-100AXIT
Виробник: Infineon Technologies
Description: IC SRAM 4.5MBIT PAR 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.15V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 8 ns
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
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CY7C1345G-100AXC Infineon-CY7C1345G_4-Mbit_(128_K_36)_Flow-Through_Sync_SRAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec4242a398f
CY7C1345G-100AXC
Виробник: Infineon Technologies
Description: IC SRAM 4.5MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.15V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 8 ns
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
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CY7C1345G-100AXCT Infineon-CY7C1345G_4-Mbit_(128_K_36)_Flow-Through_Sync_SRAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec4242a398f
CY7C1345G-100AXCT
Виробник: Infineon Technologies
Description: IC SRAM 4.5MBIT PAR 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.15V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 8 ns
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
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CY7C1059DV33-12ZSXQT Infineon-CY7C1059DV33_8-Mbit_(1M_8)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2e10737db
CY7C1059DV33-12ZSXQT
Виробник: Infineon Technologies
Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+897.85 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
CY7C1059DV33-12ZSXQT Infineon-CY7C1059DV33_8-Mbit_(1M_8)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2e10737db
CY7C1059DV33-12ZSXQT
Виробник: Infineon Technologies
Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Cut Tape (CT)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
на замовлення 936 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+871.41 грн
В кошику  од. на суму  грн.
CY7C1059DV33-12ZSXQ Infineon-CY7C1059DV33_8-Mbit_(1M_8)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2e10737db
CY7C1059DV33-12ZSXQ
Виробник: Infineon Technologies
Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Tube
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
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S25FL128SDPBHVC13
Виробник: Infineon Technologies
Description: STD SPI
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Write Cycle Time - Word, Page: 750µs
Memory Interface: SPI - Quad I/O
Access Time: 6.5 ns
Memory Organization: 16M x 8
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MB39C022GPN-G-ERE1 download
MB39C022GPN-G-ERE1
Виробник: Infineon Technologies
Description: IC REG DL BUCK/LINEAR SYNC 10SON
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V ~ 5.5V
Frequency - Switching: 2MHz
Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Supplier Device Package: 10-SON (3x3)
Voltage/Current - Output 1: 0.8V ~ 4.5V, 600mA
Voltage/Current - Output 2: 3.3V, 300mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 2
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CY7C1061G-10ZXI Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
CY7C1061G-10ZXI
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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