Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (123062) > Сторінка 717 з 2052
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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CY8C20447S-24LQXIT | Infineon Technologies |
Description: IC CAPSENCE SMARTSENCE 16K 32QFNPackaging: Tape & Reel (TR) Package / Case: 32-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C, SPI RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.71V ~ 5.5V Controller Series: CY8C20xx7/S Program Memory Type: FLASH (16kB) Applications: Capacitive Sensing Core Processor: M8C Supplier Device Package: 32-QFN (5x5) Number of I/O: 29 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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SLB9673XU20FW2613XTMA1 | Infineon Technologies |
Description: OPTIGA TPM SLB9673Program Memory Type: NVM (51kB) Controller Series: OPTIGA™ TPM Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Interface: I2C Mounting Type: Surface Mount Package / Case: 32-UFQFN Exposed Pad Packaging: Tape & Reel (TR) Number of I/O: 3 Supplier Device Package: PG-UQFN-32-1 Core Processor: 32-Bit Applications: Trusted Platform Module (TPM) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SLB9673XU20FW2613XTMA1 | Infineon Technologies |
Description: OPTIGA TPM SLB9673Applications: Trusted Platform Module (TPM) Program Memory Type: NVM (51kB) Controller Series: OPTIGA™ TPM Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Interface: I2C Mounting Type: Surface Mount Package / Case: 32-UFQFN Exposed Pad Packaging: Cut Tape (CT) Number of I/O: 3 Supplier Device Package: PG-UQFN-32-1 Core Processor: 32-Bit |
на замовлення 6325 шт: термін постачання 21-31 дні (днів) |
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SLB9673AU20FW2613XTMA1 | Infineon Technologies |
Description: OPTIGA TPM SLB9674Number of I/O: 3 Supplier Device Package: PG-UQFN-32-1 Core Processor: 32-Bit Applications: Trusted Platform Module (TPM) Program Memory Type: NVM (51kB) Controller Series: OPTIGA™ TPM Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Interface: I2C Mounting Type: Surface Mount Package / Case: 32-UFQFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SLB9673AU20FW2613XTMA1 | Infineon Technologies |
Description: OPTIGA TPM SLB9674Number of I/O: 3 Supplier Device Package: PG-UQFN-32-1 Core Processor: 32-Bit Applications: Trusted Platform Module (TPM) Program Memory Type: NVM (51kB) Controller Series: OPTIGA™ TPM Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Interface: I2C Mounting Type: Surface Mount Package / Case: 32-UFQFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 4455 шт: термін постачання 21-31 дні (днів) |
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SLS32AIA010MMUSON10XTMA2 | Infineon Technologies |
Description: SECURITY ICS / AUTHENTICATION ICSupplier Device Package: PG-USON-10-2 Core Processor: 16-Bit Applications: Secure Element Program Memory Type: NVM (10kB) Controller Series: OPTIGA™ Trust M Voltage - Supply: 1.62V ~ 5.5V Operating Temperature: -25°C ~ 85°C (TA) Interface: I2C Mounting Type: Surface Mount Package / Case: 10-UFDFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SLS32AIA010MMUSON10XTMA2 | Infineon Technologies |
Description: SECURITY ICS / AUTHENTICATION ICInterface: I2C Mounting Type: Surface Mount Package / Case: 10-UFDFN Exposed Pad Packaging: Cut Tape (CT) Supplier Device Package: PG-USON-10-2 Core Processor: 16-Bit Applications: Secure Element Program Memory Type: NVM (10kB) Controller Series: OPTIGA™ Trust M Voltage - Supply: 1.62V ~ 5.5V Operating Temperature: -25°C ~ 85°C (TA) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRFH7921TRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 15A/34A PQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 34A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: PQFN (5x6) Single Die Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| 7GA830178 | Infineon Technologies |
Description: IC MCU 32BIT 144LQFP DigiKey Programmable: Not Verified Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 600 шт В кошику од. на суму грн. | |||||||||||||||||
| FP15R12YT3BOMA1 | Infineon Technologies |
Description: IGBT MOD 1200V 25A 110WPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 15A NTC Thermistor: Yes Supplier Device Package: Module Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 110 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | |||||||||||||||||
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CY8C4025AZI-S413 | Infineon Technologies |
Description: IC MCU 32BIT 32KB FLASH 48TQFPPackaging: Tray Package / Case: 48-LQFP Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 32KB (32K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 1x10b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT Supplier Device Package: 48-TQFP (7x7) Number of I/O: 36 DigiKey Programmable: Not Verified |
на замовлення 2408 шт: термін постачання 21-31 дні (днів) |
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IAUC120N06S5N015ATMA1 | Infineon Technologies |
Description: MOSFET_)40V 60V)Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tj) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 60A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 94µA Supplier Device Package: PG-TDSON-8-43 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6952 pF @ 30 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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IPP034N08N5XKSA1 | Infineon Technologies |
Description: TRENCH 40<-<100VPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 108µA Supplier Device Package: PG-TO220-3-1 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 40 V |
на замовлення 443 шт: термін постачання 21-31 дні (днів) |
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TLF12505AUMA1 | Infineon Technologies |
Description: IC POWER STAGE PG-VIQFN-36 Packaging: Strip |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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CY9AF111KPMC-GE1 | Infineon Technologies |
Description: MULTI-MARKET MCUS Packaging: Tray Package / Case: 48-LQFP Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 96KB (96K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 8x12b SAR Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CSIO, I2C, LINbus, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 48-LQFP (7x7) Number of I/O: 36 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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IR35210MTRPBF | Infineon Technologies |
Description: IC CONTROLLER 40QFN Supplier Device Package: 32-MLPQ (5x5) Current - Supply: 10mA Applications: Multiphase Controller Voltage - Supply: 4.75V ~ 7.5V Operating Temperature: 0°C ~ 100°C (TJ) Mounting Type: Surface Mount Package / Case: 32-VFQFN Exposed Pad Packaging: Bulk |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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D2601NH90TXPSA1 | Infineon Technologies |
Description: DIODE GEN PURP 9KV 1790APackaging: Tray Package / Case: DO-200AE Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1790A Operating Temperature - Junction: 0°C ~ 140°C Voltage - DC Reverse (Vr) (Max): 9000 V Voltage - Forward (Vf) (Max) @ If: 5.5 V @ 4000 A Current - Reverse Leakage @ Vr: 150 mA @ 9000 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY7C66113C-LTXC | Infineon Technologies |
Description: IC MCU 8K USB HUB 4PORT 56VQFNDigiKey Programmable: Not Verified Number of I/O: 31 Supplier Device Package: 56-QFN (8x8) Core Processor: M8 Applications: USB Hub/Microcontroller Program Memory Type: OTP (8kB) Controller Series: USB Hub Voltage - Supply: 4V ~ 5.25V Operating Temperature: 0°C ~ 70°C RAM Size: 256 x 8 Interface: I2C, USB, HAPI Mounting Type: Surface Mount Package / Case: 56-VFQFN Exposed Pad Packaging: Tray |
на замовлення 480 шт: термін постачання 21-31 дні (днів) |
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T731N44TOHXPSA1 | Infineon Technologies |
Description: SCR MODULE 4.4KV 2010A TO-200ACVoltage - Off State: 4.4 kV Current - On State (It (RMS)) (Max): 2010 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Current - On State (It (AV)) (Max): 1280 A Number of SCRs, Diodes: 1 SCR Current - Non Rep. Surge 50, 60Hz (Itsm): 18000A @ 50Hz Current - Gate Trigger (Igt) (Max): 350 mA Current - Hold (Ih) (Max): 350 mA Structure: Single Operating Temperature: -40°C ~ 125°C Mounting Type: Clamp On Package / Case: TO-200AC Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 4 шт В кошику од. на суму грн. | ||||||||||||||||
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T1401N42TOHXPSA1 | Infineon Technologies |
Description: SCR MODULE 4.4KV 2500A TO-200AFVoltage - Off State: 4.4 kV Current - On State (It (RMS)) (Max): 2500 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Current - On State (It (AV)) (Max): 2290 A Number of SCRs, Diodes: 1 SCR Current - Non Rep. Surge 50, 60Hz (Itsm): 40000A @ 50Hz Current - Gate Trigger (Igt) (Max): 350 mA Current - Hold (Ih) (Max): 350 mA Structure: Single Operating Temperature: -40°C ~ 125°C Mounting Type: Chassis Mount Package / Case: TO-200AF Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| T680N14TOFXPSA1 | Infineon Technologies |
Description: SCR MODULE 1.4KV 1250A DO-200AB Packaging: Tray Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Operating Temperature: -40°C ~ 125°C Structure: Single Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 11000A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 681 A Voltage - Gate Trigger (Vgt) (Max): 2.2 V Current - On State (It (RMS)) (Max): 1250 A Voltage - Off State: 1.4 kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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EVALPMG1S1DRPTOBO1 | Infineon Technologies |
Description: EVALPMG1S1DRPTOBO1Embedded: Yes, MCU Supplied Contents: Board(s) Utilized IC / Part: EZ-PD PMG1-S1 Type: Power Management Function: USB PD Controller (Power Delivery) Packaging: Box |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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IPBE65R115CFD7AATMA1 | Infineon Technologies |
Description: AUTOMOTIVE_COOLMOS PG-TO263-7Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V Power Dissipation (Max): 114W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 490µA Supplier Device Package: PG-TO263-7-11 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 400 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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IPBE65R115CFD7AATMA1 | Infineon Technologies |
Description: AUTOMOTIVE_COOLMOS PG-TO263-7Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V Power Dissipation (Max): 114W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 490µA Supplier Device Package: PG-TO263-7-11 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 400 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 871 шт: термін постачання 21-31 дні (днів) |
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TLE4953CBAMA1 | Infineon Technologies |
Description: MAG SWITCH SPEC PURP SSO-2-2Packaging: Bulk Package / Case: 2-SIP, SSO-2-2 Output Type: Current Source Polarization: North Pole, South Pole Mounting Type: Through Hole Function: Special Purpose Voltage - Supply: 4.5V ~ 20V Technology: Hall Effect Current - Supply (Max): 16.8mA Supplier Device Package: PG-SSO-2-2 Grade: Automotive Qualification: AEC-Q100 |
на замовлення 428 шт: термін постачання 21-31 дні (днів) |
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IRL3714ZSPBF | Infineon Technologies |
Description: MOSFET N-CH 20V 36A D2PAKMounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2.55V @ 250µA Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| IM241S6T2B2AKMA1 | Infineon Technologies |
Description: CIPOS MICRO Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 240 шт В кошику од. на суму грн. | |||||||||||||||||
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CY62148ESL-55ZAXIT | Infineon Technologies |
Description: IC SRAM 4MBIT PARALLEL 32STSOPPackaging: Tape & Reel (TR) Package / Case: 32-TFSOP (0.465", 11.80mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V, 4.5V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 32-sTSOP Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Access Time: 55 ns Memory Organization: 512K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||||
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CY62148ESL-55ZAXIT | Infineon Technologies |
Description: IC SRAM 4MBIT PARALLEL 32STSOPPackaging: Cut Tape (CT) Package / Case: 32-TFSOP (0.465", 11.80mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V, 4.5V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 32-sTSOP Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Access Time: 55 ns Memory Organization: 512K x 8 DigiKey Programmable: Not Verified |
на замовлення 1485 шт: термін постачання 21-31 дні (днів) |
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CY62148DV30LL-70ZSXA | Infineon Technologies |
Description: IC SRAM 4MBIT PARALLEL 32TSOP IIPackaging: Tube Package / Case: 32-SOIC (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 32-TSOP II Write Cycle Time - Word, Page: 70ns Memory Interface: Parallel Access Time: 70 ns Memory Organization: 512K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY62148GN30-45SXIT | Infineon Technologies |
Description: IC SRAM 4MBIT PARALLEL 32TSOP IIDigiKey Programmable: Not Verified Memory Organization: 512K x 8 Access Time: 45 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 45ns Supplier Device Package: 32-TSOP II Memory Format: SRAM Technology: SRAM - Asynchronous Voltage - Supply: 2.2V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Volatile Memory Size: 4Mbit Mounting Type: Surface Mount Package / Case: 32-SOIC (0.400", 10.16mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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CY62148GN30-45ZSXIT | Infineon Technologies |
Description: IC SRAM 4MBIT PARALLEL 32TSOP IIPackaging: Tape & Reel (TR) Package / Case: 32-SOIC (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 32-TSOP II Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 512K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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CY62148GN30-45SXI | Infineon Technologies |
Description: IC SRAM 4MBIT PARALLEL 32TSOP IIDigiKey Programmable: Not Verified Memory Organization: 512K x 8 Access Time: 45 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 45ns Supplier Device Package: 32-TSOP II Memory Format: SRAM Technology: SRAM - Asynchronous Voltage - Supply: 2.2V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Volatile Memory Size: 4Mbit Mounting Type: Surface Mount Package / Case: 32-SOIC (0.400", 10.16mm Width) Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||||||||
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DF100R07W1H5FPB54BPSA2 | Infineon Technologies |
Description: IGBT MODULE 650V 40A MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 25A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Cutoff (Max): 40 µA Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V |
на замовлення 67 шт: термін постачання 21-31 дні (днів) |
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FP40R12KT3GBOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 55A 210W MODInput Capacitance (Cies) @ Vce: 2.5 nF @ 25 V Current - Collector Cutoff (Max): 5 mA Power - Max: 210 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 55 A Supplier Device Package: Module NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 401A Operating Temperature: -40°C ~ 125°C Configuration: Three Phase Inverter Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk |
на замовлення 203 шт: термін постачання 21-31 дні (днів) |
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IRGP4750D-EPBF | Infineon Technologies |
Description: IGBT 650V 70A TO-247ADPower - Max: 273 W Current - Collector Pulsed (Icm): 105 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 70 A Gate Charge: 105 nC Test Condition: 400V, 35A, 10Ohm, 15V Switching Energy: 1.3mJ (on), 500µJ (off) Td (on/off) @ 25°C: 50ns/105ns Supplier Device Package: TO-247AD Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A Reverse Recovery Time (trr): 150 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRGP4750DPBF | Infineon Technologies |
Description: IGBT 650V 70A TO-247ACPackaging: Tube Power - Max: 273 W Current - Collector Pulsed (Icm): 105 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 70 A Gate Charge: 105 nC Test Condition: 400V, 35A, 10Ohm, 15V Switching Energy: 1.3mJ (on), 500µJ (off) Td (on/off) @ 25°C: 50ns/105ns Supplier Device Package: TO-247AC Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A Reverse Recovery Time (trr): 150 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPT60T065S7XTMA1 | Infineon Technologies |
Description: HIGH POWER_NEWInput Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 12V Supplier Device Package: PG-HSOF-8-2 Vgs(th) (Max) @ Id: 4.5V @ 470µA Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
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IPT60T065S7XTMA1 | Infineon Technologies |
Description: HIGH POWER_NEWInput Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 12V Supplier Device Package: PG-HSOF-8-2 Vgs(th) (Max) @ Id: 4.5V @ 470µA Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Cut Tape (CT) |
на замовлення 1930 шт: термін постачання 21-31 дні (днів) |
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IPF129N20NM6ATMA1 | Infineon Technologies |
Description: IPF129N20NM6ATMA1Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Supplier Device Package: PG-TO263-7-3 Vgs(th) (Max) @ Id: 4.5V @ 129µA Power Dissipation (Max): 3.8W (Ta), 234W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 65A, 15V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 87A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Drain to Source Voltage (Vdss): 200 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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IPF129N20NM6ATMA1 | Infineon Technologies |
Description: IPF129N20NM6ATMA1Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Supplier Device Package: PG-TO263-7-3 Vgs(th) (Max) @ Id: 4.5V @ 129µA Power Dissipation (Max): 3.8W (Ta), 234W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 65A, 15V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 87A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Packaging: Cut Tape (CT) |
на замовлення 797 шт: термін постачання 21-31 дні (днів) |
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CY62148ELL-45SXI | Infineon Technologies |
Description: IC SRAM 4MBIT PARALLEL 32SOICDigiKey Programmable: Not Verified Memory Organization: 512K x 8 Access Time: 45 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 45ns Supplier Device Package: 32-SOIC Memory Format: SRAM Technology: SRAM - Asynchronous Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Volatile Memory Size: 4Mbit Mounting Type: Surface Mount Package / Case: 32-SOIC (0.445", 11.30mm Width) Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. | ||||||||||||||||
| DD560N45KHPSA1 | Infineon Technologies |
Description: THYR / DIODE MODULE DK Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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TD210N16KOFHPSA1 | Infineon Technologies |
Description: SCR MODULE 1800V 410A MODULEVoltage - Off State: 1.8 kV Current - On State (It (RMS)) (Max): 410 A Voltage - Gate Trigger (Vgt) (Max): 2 V Current - On State (It (AV)) (Max): 261 A Number of SCRs, Diodes: 1 SCR, 1 Diode Current - Non Rep. Surge 50, 60Hz (Itsm): 6600A @ 50Hz Current - Gate Trigger (Igt) (Max): 200 mA Current - Hold (Ih) (Max): 300 mA Structure: Series Connection - SCR/Diode Operating Temperature: -40°C ~ 125°C Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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| DD710N16KS20HPSA1 | Infineon Technologies |
Description: THYR / DIODE MODULE DK Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 2 шт В кошику од. на суму грн. | |||||||||||||||||
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T2810N16TOFVTXPSA1 | Infineon Technologies |
Description: SCR MODULE 2200V 5800A DO200AEVoltage - Off State: 2.2 kV Current - On State (It (RMS)) (Max): 5800 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Current - On State (It (AV)) (Max): 2810 A Number of SCRs, Diodes: 1 SCR Current - Non Rep. Surge 50, 60Hz (Itsm): 58000A @ 50Hz Current - Gate Trigger (Igt) (Max): 300 mA Current - Hold (Ih) (Max): 300 mA Structure: Single Operating Temperature: -40°C ~ 125°C Mounting Type: Chassis Mount Package / Case: DO-200AE Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 2 шт В кошику од. на суму грн. | ||||||||||||||||
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TD120N16SOFHPSA1 | Infineon Technologies |
Description: THYRISTOR MODULE 1600V 120APackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: 130°C (TJ) Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 250 mA Current - Gate Trigger (Igt) (Max): 100 mA Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 119 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Current - On State (It (RMS)) (Max): 190 A Voltage - Off State: 1.6 kV |
на замовлення 101 шт: термін постачання 21-31 дні (днів) |
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DD220N16SHPSA1 | Infineon Technologies |
Description: DIODE MOD GP 1600V 273A BGPB34SBPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 273A Supplier Device Package: BG-PB34SB-1 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.39 V @ 500 A Current - Reverse Leakage @ Vr: 1 mA @ 1600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPTG025N08NM5ATMA1 | Infineon Technologies |
Description: TRENCH 40<-<100V PG-HSOG-8Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: PG-HSOG-8-1 Vgs(th) (Max) @ Id: 3.8V @ 108µA Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 150A 10V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 184A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSMD, Gull Wing Packaging: Cut Tape (CT) |
на замовлення 1780 шт: термін постачання 21-31 дні (днів) |
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IPTG017N12NM6ATMA1 | Infineon Technologies |
Description: TRENCH >=100VVgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Supplier Device Package: PG-HSOG-8-1 Vgs(th) (Max) @ Id: 3.6V @ 275µA Power Dissipation (Max): 3.8W (Ta), 395W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 331A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSMD, Gull Wing Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V Drain to Source Voltage (Vdss): 120 V |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | ||||||||||||||||
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IPTG017N12NM6ATMA1 | Infineon Technologies |
Description: TRENCH >=100VInput Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V Drain to Source Voltage (Vdss): 120 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Supplier Device Package: PG-HSOG-8-1 Vgs(th) (Max) @ Id: 3.6V @ 275µA Power Dissipation (Max): 3.8W (Ta), 395W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 331A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSMD, Gull Wing Packaging: Cut Tape (CT) |
на замовлення 1346 шт: термін постачання 21-31 дні (днів) |
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ISC130N20NM6ATMA1 | Infineon Technologies |
Description: MOSFETPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 88A (Tc) Rds On (Max) @ Id, Vgs: 11.7mOhm @ 50A, 15V Power Dissipation (Max): 3W (Ta), 242W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 135µA Supplier Device Package: PG-TSON-8-3 Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 100 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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ISC130N20NM6ATMA1 | Infineon Technologies |
Description: MOSFETPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 88A (Tc) Rds On (Max) @ Id, Vgs: 11.7mOhm @ 50A, 15V Power Dissipation (Max): 3W (Ta), 242W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 135µA Supplier Device Package: PG-TSON-8-3 Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 100 V |
на замовлення 5450 шт: термін постачання 21-31 дні (днів) |
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CY90F546GPFR-GE1 | Infineon Technologies |
Description: IC MCU 16BIT 256KB FLASH 100QFPDigiKey Programmable: Not Verified Number of I/O: 81 Supplier Device Package: 100-QFP (14x20) Peripherals: POR, WDT Connectivity: CANbus, EBI/EMI, SCI, Serial I/O, UART/USART Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Core Size: 16-Bit Data Converters: A/D 8x8/10b Core Processor: F²MC-16LX Program Memory Type: FLASH Oscillator Type: External Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 8K x 8 Program Memory Size: 256KB (256K x 8) Speed: 16MHz Mounting Type: Surface Mount Package / Case: 100-BQFP Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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KITXMC1300DCV1TOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR XMC1300Packaging: Bulk Function: Motor Controller/Driver Type: Power Management Utilized IC / Part: XMC1300 Supplied Contents: Board(s) Primary Attributes: Motors (BLDC) Embedded: Yes, MCU Contents: Board(s) |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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FS450R17OE4BOSA1 | Infineon Technologies |
Description: IGBT MOD 1700V 630A 2400WInput Capacitance (Cies) @ Vce: 36 nF @ 25 V Current - Collector Cutoff (Max): 3 mA Power - Max: 2400 W Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector (Ic) (Max): 630 A IGBT Type: Trench Field Stop Supplier Device Package: Module NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 450A Operating Temperature: -40°C ~ 150°C Configuration: Full Bridge Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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FF1500R12IE5PBPSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 1500A AGPRIME3+-5Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 175°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1.5kA NTC Thermistor: Yes Supplier Device Package: AG-PRIME3+-5 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 1500 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 5 mA |
на замовлення 297 шт: термін постачання 21-31 дні (днів) |
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FF1500R12IE5PBPSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 1500A AGPRIME3+-5Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 175°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1.5kA NTC Thermistor: Yes Supplier Device Package: AG-PRIME3+-5 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 1500 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 5 mA |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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FF150R17ME3GBOSA1 | Infineon Technologies |
Description: IGBT MOD 1700V 240A 1050WPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 150A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 240 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 1050 W Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 13.5 nF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||||||||||||
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C161SLM3VAABXUMA1 | Infineon Technologies |
Description: SAB-C161S - LEGACY 16-BIT MICROCSpeed: 20MHz Mounting Type: Surface Mount Package / Case: 80-QFP Packaging: Bulk DigiKey Programmable: Not Verified Number of I/O: 63 Supplier Device Package: PG-MQFP-80-7 Peripherals: POR, PWM, WDT Connectivity: EBI/EMI, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V Core Size: 16-Bit Core Processor: C166 Program Memory Type: ROMless Oscillator Type: External Operating Temperature: 0°C ~ 70°C (TA) RAM Size: 2K x 8 |
на замовлення 2247 шт: термін постачання 21-31 дні (днів) |
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| CY8C20447S-24LQXIT |
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Виробник: Infineon Technologies
Description: IC CAPSENCE SMARTSENCE 16K 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx7/S
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 29
DigiKey Programmable: Not Verified
Description: IC CAPSENCE SMARTSENCE 16K 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx7/S
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 29
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| SLB9673XU20FW2613XTMA1 |
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Виробник: Infineon Technologies
Description: OPTIGA TPM SLB9673
Program Memory Type: NVM (51kB)
Controller Series: OPTIGA™ TPM
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Interface: I2C
Mounting Type: Surface Mount
Package / Case: 32-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Number of I/O: 3
Supplier Device Package: PG-UQFN-32-1
Core Processor: 32-Bit
Applications: Trusted Platform Module (TPM)
Description: OPTIGA TPM SLB9673
Program Memory Type: NVM (51kB)
Controller Series: OPTIGA™ TPM
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Interface: I2C
Mounting Type: Surface Mount
Package / Case: 32-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Number of I/O: 3
Supplier Device Package: PG-UQFN-32-1
Core Processor: 32-Bit
Applications: Trusted Platform Module (TPM)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 156.60 грн |
| SLB9673XU20FW2613XTMA1 |
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Виробник: Infineon Technologies
Description: OPTIGA TPM SLB9673
Applications: Trusted Platform Module (TPM)
Program Memory Type: NVM (51kB)
Controller Series: OPTIGA™ TPM
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Interface: I2C
Mounting Type: Surface Mount
Package / Case: 32-UFQFN Exposed Pad
Packaging: Cut Tape (CT)
Number of I/O: 3
Supplier Device Package: PG-UQFN-32-1
Core Processor: 32-Bit
Description: OPTIGA TPM SLB9673
Applications: Trusted Platform Module (TPM)
Program Memory Type: NVM (51kB)
Controller Series: OPTIGA™ TPM
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Interface: I2C
Mounting Type: Surface Mount
Package / Case: 32-UFQFN Exposed Pad
Packaging: Cut Tape (CT)
Number of I/O: 3
Supplier Device Package: PG-UQFN-32-1
Core Processor: 32-Bit
на замовлення 6325 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 291.37 грн |
| 10+ | 212.45 грн |
| 25+ | 195.51 грн |
| 100+ | 166.00 грн |
| 250+ | 157.67 грн |
| 500+ | 152.65 грн |
| 1000+ | 146.08 грн |
| 2500+ | 141.79 грн |
| SLB9673AU20FW2613XTMA1 |
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Виробник: Infineon Technologies
Description: OPTIGA TPM SLB9674
Number of I/O: 3
Supplier Device Package: PG-UQFN-32-1
Core Processor: 32-Bit
Applications: Trusted Platform Module (TPM)
Program Memory Type: NVM (51kB)
Controller Series: OPTIGA™ TPM
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Interface: I2C
Mounting Type: Surface Mount
Package / Case: 32-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: OPTIGA TPM SLB9674
Number of I/O: 3
Supplier Device Package: PG-UQFN-32-1
Core Processor: 32-Bit
Applications: Trusted Platform Module (TPM)
Program Memory Type: NVM (51kB)
Controller Series: OPTIGA™ TPM
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Interface: I2C
Mounting Type: Surface Mount
Package / Case: 32-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| SLB9673AU20FW2613XTMA1 |
![]() |
Виробник: Infineon Technologies
Description: OPTIGA TPM SLB9674
Number of I/O: 3
Supplier Device Package: PG-UQFN-32-1
Core Processor: 32-Bit
Applications: Trusted Platform Module (TPM)
Program Memory Type: NVM (51kB)
Controller Series: OPTIGA™ TPM
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Interface: I2C
Mounting Type: Surface Mount
Package / Case: 32-UFQFN Exposed Pad
Packaging: Cut Tape (CT)
Description: OPTIGA TPM SLB9674
Number of I/O: 3
Supplier Device Package: PG-UQFN-32-1
Core Processor: 32-Bit
Applications: Trusted Platform Module (TPM)
Program Memory Type: NVM (51kB)
Controller Series: OPTIGA™ TPM
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Interface: I2C
Mounting Type: Surface Mount
Package / Case: 32-UFQFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 4455 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 415.35 грн |
| 10+ | 305.12 грн |
| 25+ | 281.44 грн |
| 100+ | 239.67 грн |
| 250+ | 228.01 грн |
| 500+ | 220.99 грн |
| 1000+ | 211.68 грн |
| 2500+ | 205.67 грн |
| SLS32AIA010MMUSON10XTMA2 |
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Виробник: Infineon Technologies
Description: SECURITY ICS / AUTHENTICATION IC
Supplier Device Package: PG-USON-10-2
Core Processor: 16-Bit
Applications: Secure Element
Program Memory Type: NVM (10kB)
Controller Series: OPTIGA™ Trust M
Voltage - Supply: 1.62V ~ 5.5V
Operating Temperature: -25°C ~ 85°C (TA)
Interface: I2C
Mounting Type: Surface Mount
Package / Case: 10-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: SECURITY ICS / AUTHENTICATION IC
Supplier Device Package: PG-USON-10-2
Core Processor: 16-Bit
Applications: Secure Element
Program Memory Type: NVM (10kB)
Controller Series: OPTIGA™ Trust M
Voltage - Supply: 1.62V ~ 5.5V
Operating Temperature: -25°C ~ 85°C (TA)
Interface: I2C
Mounting Type: Surface Mount
Package / Case: 10-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
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| SLS32AIA010MMUSON10XTMA2 |
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Виробник: Infineon Technologies
Description: SECURITY ICS / AUTHENTICATION IC
Interface: I2C
Mounting Type: Surface Mount
Package / Case: 10-UFDFN Exposed Pad
Packaging: Cut Tape (CT)
Supplier Device Package: PG-USON-10-2
Core Processor: 16-Bit
Applications: Secure Element
Program Memory Type: NVM (10kB)
Controller Series: OPTIGA™ Trust M
Voltage - Supply: 1.62V ~ 5.5V
Operating Temperature: -25°C ~ 85°C (TA)
Description: SECURITY ICS / AUTHENTICATION IC
Interface: I2C
Mounting Type: Surface Mount
Package / Case: 10-UFDFN Exposed Pad
Packaging: Cut Tape (CT)
Supplier Device Package: PG-USON-10-2
Core Processor: 16-Bit
Applications: Secure Element
Program Memory Type: NVM (10kB)
Controller Series: OPTIGA™ Trust M
Voltage - Supply: 1.62V ~ 5.5V
Operating Temperature: -25°C ~ 85°C (TA)
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| IRFH7921TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 15A/34A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: PQFN (5x6) Single Die
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V
Description: MOSFET N-CH 30V 15A/34A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: PQFN (5x6) Single Die
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V
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| 7GA830178 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 144LQFP
DigiKey Programmable: Not Verified
Packaging: Tray
Description: IC MCU 32BIT 144LQFP
DigiKey Programmable: Not Verified
Packaging: Tray
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Мінімальне замовлення: 600 шт
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| FP15R12YT3BOMA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 25A 110W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 110 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
Description: IGBT MOD 1200V 25A 110W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 110 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
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Мінімальне замовлення: 20 шт
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| CY8C4025AZI-S413 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 1x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 32KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 1x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
на замовлення 2408 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 226.27 грн |
| 10+ | 163.34 грн |
| 25+ | 149.75 грн |
| 100+ | 126.53 грн |
| 250+ | 119.85 грн |
| 500+ | 115.82 грн |
| 1000+ | 110.67 грн |
| IAUC120N06S5N015ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET_)40V 60V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 60A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 94µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6952 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET_)40V 60V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 60A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 94µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6952 pF @ 30 V
Qualification: AEC-Q101
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Мінімальне замовлення: 5000 шт
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| IPP034N08N5XKSA1 |
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Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 40 V
Description: TRENCH 40<-<100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 40 V
на замовлення 443 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 262.69 грн |
| 50+ | 127.87 грн |
| 100+ | 115.71 грн |
| CY9AF111KPMC-GE1 |
Виробник: Infineon Technologies
Description: MULTI-MARKET MCUS
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 8x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 36
Description: MULTI-MARKET MCUS
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 8x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 36
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Мінімальне замовлення: 2500 шт
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| IR35210MTRPBF |
Виробник: Infineon Technologies
Description: IC CONTROLLER 40QFN
Supplier Device Package: 32-MLPQ (5x5)
Current - Supply: 10mA
Applications: Multiphase Controller
Voltage - Supply: 4.75V ~ 7.5V
Operating Temperature: 0°C ~ 100°C (TJ)
Mounting Type: Surface Mount
Package / Case: 32-VFQFN Exposed Pad
Packaging: Bulk
Description: IC CONTROLLER 40QFN
Supplier Device Package: 32-MLPQ (5x5)
Current - Supply: 10mA
Applications: Multiphase Controller
Voltage - Supply: 4.75V ~ 7.5V
Operating Temperature: 0°C ~ 100°C (TJ)
Mounting Type: Surface Mount
Package / Case: 32-VFQFN Exposed Pad
Packaging: Bulk
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 73+ | 277.09 грн |
| D2601NH90TXPSA1 |
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Виробник: Infineon Technologies
Description: DIODE GEN PURP 9KV 1790A
Packaging: Tray
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1790A
Operating Temperature - Junction: 0°C ~ 140°C
Voltage - DC Reverse (Vr) (Max): 9000 V
Voltage - Forward (Vf) (Max) @ If: 5.5 V @ 4000 A
Current - Reverse Leakage @ Vr: 150 mA @ 9000 V
Description: DIODE GEN PURP 9KV 1790A
Packaging: Tray
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1790A
Operating Temperature - Junction: 0°C ~ 140°C
Voltage - DC Reverse (Vr) (Max): 9000 V
Voltage - Forward (Vf) (Max) @ If: 5.5 V @ 4000 A
Current - Reverse Leakage @ Vr: 150 mA @ 9000 V
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| CY7C66113C-LTXC |
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Виробник: Infineon Technologies
Description: IC MCU 8K USB HUB 4PORT 56VQFN
DigiKey Programmable: Not Verified
Number of I/O: 31
Supplier Device Package: 56-QFN (8x8)
Core Processor: M8
Applications: USB Hub/Microcontroller
Program Memory Type: OTP (8kB)
Controller Series: USB Hub
Voltage - Supply: 4V ~ 5.25V
Operating Temperature: 0°C ~ 70°C
RAM Size: 256 x 8
Interface: I2C, USB, HAPI
Mounting Type: Surface Mount
Package / Case: 56-VFQFN Exposed Pad
Packaging: Tray
Description: IC MCU 8K USB HUB 4PORT 56VQFN
DigiKey Programmable: Not Verified
Number of I/O: 31
Supplier Device Package: 56-QFN (8x8)
Core Processor: M8
Applications: USB Hub/Microcontroller
Program Memory Type: OTP (8kB)
Controller Series: USB Hub
Voltage - Supply: 4V ~ 5.25V
Operating Temperature: 0°C ~ 70°C
RAM Size: 256 x 8
Interface: I2C, USB, HAPI
Mounting Type: Surface Mount
Package / Case: 56-VFQFN Exposed Pad
Packaging: Tray
на замовлення 480 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 44+ | 512.07 грн |
| T731N44TOHXPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 4.4KV 2010A TO-200AC
Voltage - Off State: 4.4 kV
Current - On State (It (RMS)) (Max): 2010 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 1280 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 18000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Hold (Ih) (Max): 350 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Clamp On
Package / Case: TO-200AC
Packaging: Tray
Description: SCR MODULE 4.4KV 2010A TO-200AC
Voltage - Off State: 4.4 kV
Current - On State (It (RMS)) (Max): 2010 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 1280 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 18000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Hold (Ih) (Max): 350 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Clamp On
Package / Case: TO-200AC
Packaging: Tray
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Мінімальне замовлення: 4 шт
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| T1401N42TOHXPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 4.4KV 2500A TO-200AF
Voltage - Off State: 4.4 kV
Current - On State (It (RMS)) (Max): 2500 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 2290 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 40000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Hold (Ih) (Max): 350 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: TO-200AF
Packaging: Tray
Description: SCR MODULE 4.4KV 2500A TO-200AF
Voltage - Off State: 4.4 kV
Current - On State (It (RMS)) (Max): 2500 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 2290 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 40000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Hold (Ih) (Max): 350 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: TO-200AF
Packaging: Tray
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| T680N14TOFXPSA1 |
Виробник: Infineon Technologies
Description: SCR MODULE 1.4KV 1250A DO-200AB
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 11000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 681 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 1250 A
Voltage - Off State: 1.4 kV
Description: SCR MODULE 1.4KV 1250A DO-200AB
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 11000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 681 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 1250 A
Voltage - Off State: 1.4 kV
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| EVALPMG1S1DRPTOBO1 |
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Виробник: Infineon Technologies
Description: EVALPMG1S1DRPTOBO1
Embedded: Yes, MCU
Supplied Contents: Board(s)
Utilized IC / Part: EZ-PD PMG1-S1
Type: Power Management
Function: USB PD Controller (Power Delivery)
Packaging: Box
Description: EVALPMG1S1DRPTOBO1
Embedded: Yes, MCU
Supplied Contents: Board(s)
Utilized IC / Part: EZ-PD PMG1-S1
Type: Power Management
Function: USB PD Controller (Power Delivery)
Packaging: Box
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 10124.17 грн |
| IPBE65R115CFD7AATMA1 |
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Виробник: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS PG-TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-TO263-7-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 400 V
Qualification: AEC-Q101
Description: AUTOMOTIVE_COOLMOS PG-TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-TO263-7-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 400 V
Qualification: AEC-Q101
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Мінімальне замовлення: 1000 шт
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| IPBE65R115CFD7AATMA1 |
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Виробник: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS PG-TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-TO263-7-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Description: AUTOMOTIVE_COOLMOS PG-TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-TO263-7-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 871 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 348.71 грн |
| 10+ | 223.79 грн |
| 100+ | 160.05 грн |
| 500+ | 144.34 грн |
| TLE4953CBAMA1 |
![]() |
Виробник: Infineon Technologies
Description: MAG SWITCH SPEC PURP SSO-2-2
Packaging: Bulk
Package / Case: 2-SIP, SSO-2-2
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-2
Grade: Automotive
Qualification: AEC-Q100
Description: MAG SWITCH SPEC PURP SSO-2-2
Packaging: Bulk
Package / Case: 2-SIP, SSO-2-2
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-2
Grade: Automotive
Qualification: AEC-Q100
на замовлення 428 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 115+ | 173.39 грн |
| IRL3714ZSPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 36A D2PAK
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Description: MOSFET N-CH 20V 36A D2PAK
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
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| CY62148ESL-55ZAXIT |
![]() |
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32STSOP
Packaging: Tape & Reel (TR)
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V, 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-sTSOP
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 32STSOP
Packaging: Tape & Reel (TR)
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V, 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-sTSOP
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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Мінімальне замовлення: 1500 шт
В кошику
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| CY62148ESL-55ZAXIT |
![]() |
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32STSOP
Packaging: Cut Tape (CT)
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V, 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-sTSOP
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 32STSOP
Packaging: Cut Tape (CT)
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V, 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-sTSOP
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
на замовлення 1485 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 406.83 грн |
| 10+ | 364.90 грн |
| 25+ | 354.03 грн |
| 50+ | 324.46 грн |
| 100+ | 316.71 грн |
| 250+ | 306.54 грн |
| 500+ | 294.02 грн |
| CY62148DV30LL-70ZSXA |
![]() |
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tube
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tube
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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| CY62148GN30-45SXIT |
![]() |
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
DigiKey Programmable: Not Verified
Memory Organization: 512K x 8
Access Time: 45 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Supplier Device Package: 32-TSOP II
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Packaging: Tape & Reel (TR)
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
DigiKey Programmable: Not Verified
Memory Organization: 512K x 8
Access Time: 45 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Supplier Device Package: 32-TSOP II
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| CY62148GN30-45ZSXIT |
![]() |
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| CY62148GN30-45SXI |
![]() |
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
DigiKey Programmable: Not Verified
Memory Organization: 512K x 8
Access Time: 45 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Supplier Device Package: 32-TSOP II
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Packaging: Tube
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
DigiKey Programmable: Not Verified
Memory Organization: 512K x 8
Access Time: 45 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Supplier Device Package: 32-TSOP II
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 500 шт
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| DF100R07W1H5FPB54BPSA2 |
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Виробник: Infineon Technologies
Description: IGBT MODULE 650V 40A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Cutoff (Max): 40 µA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
Description: IGBT MODULE 650V 40A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Cutoff (Max): 40 µA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
на замовлення 67 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 2058.08 грн |
| FP40R12KT3GBOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 55A 210W MOD
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 210 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 55 A
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 401A
Operating Temperature: -40°C ~ 125°C
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Description: IGBT MOD 1200V 55A 210W MOD
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 210 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 55 A
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 401A
Operating Temperature: -40°C ~ 125°C
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
на замовлення 203 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 6367.67 грн |
| IRGP4750D-EPBF |
![]() |
Виробник: Infineon Technologies
Description: IGBT 650V 70A TO-247AD
Power - Max: 273 W
Current - Collector Pulsed (Icm): 105 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 70 A
Gate Charge: 105 nC
Test Condition: 400V, 35A, 10Ohm, 15V
Switching Energy: 1.3mJ (on), 500µJ (off)
Td (on/off) @ 25°C: 50ns/105ns
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
Reverse Recovery Time (trr): 150 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT 650V 70A TO-247AD
Power - Max: 273 W
Current - Collector Pulsed (Icm): 105 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 70 A
Gate Charge: 105 nC
Test Condition: 400V, 35A, 10Ohm, 15V
Switching Energy: 1.3mJ (on), 500µJ (off)
Td (on/off) @ 25°C: 50ns/105ns
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
Reverse Recovery Time (trr): 150 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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| IRGP4750DPBF |
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Виробник: Infineon Technologies
Description: IGBT 650V 70A TO-247AC
Packaging: Tube
Power - Max: 273 W
Current - Collector Pulsed (Icm): 105 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 70 A
Gate Charge: 105 nC
Test Condition: 400V, 35A, 10Ohm, 15V
Switching Energy: 1.3mJ (on), 500µJ (off)
Td (on/off) @ 25°C: 50ns/105ns
Supplier Device Package: TO-247AC
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
Reverse Recovery Time (trr): 150 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Description: IGBT 650V 70A TO-247AC
Packaging: Tube
Power - Max: 273 W
Current - Collector Pulsed (Icm): 105 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 70 A
Gate Charge: 105 nC
Test Condition: 400V, 35A, 10Ohm, 15V
Switching Energy: 1.3mJ (on), 500µJ (off)
Td (on/off) @ 25°C: 50ns/105ns
Supplier Device Package: TO-247AC
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
Reverse Recovery Time (trr): 150 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
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| IPT60T065S7XTMA1 |
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Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: PG-HSOF-8-2
Vgs(th) (Max) @ Id: 4.5V @ 470µA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Description: HIGH POWER_NEW
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: PG-HSOF-8-2
Vgs(th) (Max) @ Id: 4.5V @ 470µA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2000 шт
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| IPT60T065S7XTMA1 |
![]() |
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: PG-HSOF-8-2
Vgs(th) (Max) @ Id: 4.5V @ 470µA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Description: HIGH POWER_NEW
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: PG-HSOF-8-2
Vgs(th) (Max) @ Id: 4.5V @ 470µA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
на замовлення 1930 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 438.60 грн |
| 10+ | 282.96 грн |
| 100+ | 204.04 грн |
| 500+ | 159.93 грн |
| 1000+ | 159.82 грн |
| IPF129N20NM6ATMA1 |
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Виробник: Infineon Technologies
Description: IPF129N20NM6ATMA1
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Supplier Device Package: PG-TO263-7-3
Vgs(th) (Max) @ Id: 4.5V @ 129µA
Power Dissipation (Max): 3.8W (Ta), 234W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 65A, 15V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 87A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Description: IPF129N20NM6ATMA1
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Supplier Device Package: PG-TO263-7-3
Vgs(th) (Max) @ Id: 4.5V @ 129µA
Power Dissipation (Max): 3.8W (Ta), 234W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 65A, 15V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 87A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
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Мінімальне замовлення: 1000 шт
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| IPF129N20NM6ATMA1 |
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Виробник: Infineon Technologies
Description: IPF129N20NM6ATMA1
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Supplier Device Package: PG-TO263-7-3
Vgs(th) (Max) @ Id: 4.5V @ 129µA
Power Dissipation (Max): 3.8W (Ta), 234W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 65A, 15V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 87A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
Description: IPF129N20NM6ATMA1
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Supplier Device Package: PG-TO263-7-3
Vgs(th) (Max) @ Id: 4.5V @ 129µA
Power Dissipation (Max): 3.8W (Ta), 234W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 65A, 15V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 87A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
на замовлення 797 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 420.77 грн |
| 10+ | 271.17 грн |
| 100+ | 195.21 грн |
| 500+ | 152.79 грн |
| CY62148ELL-45SXI |
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Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32SOIC
DigiKey Programmable: Not Verified
Memory Organization: 512K x 8
Access Time: 45 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Supplier Device Package: 32-SOIC
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Packaging: Tube
Description: IC SRAM 4MBIT PARALLEL 32SOIC
DigiKey Programmable: Not Verified
Memory Organization: 512K x 8
Access Time: 45 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Supplier Device Package: 32-SOIC
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Packaging: Tube
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Мінімальне замовлення: 450 шт
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| TD210N16KOFHPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1800V 410A MODULE
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 410 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 261 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 6600A @ 50Hz
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - SCR/Diode
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Description: SCR MODULE 1800V 410A MODULE
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 410 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 261 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 6600A @ 50Hz
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - SCR/Diode
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 11182.30 грн |
| T2810N16TOFVTXPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 2200V 5800A DO200AE
Voltage - Off State: 2.2 kV
Current - On State (It (RMS)) (Max): 5800 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 2810 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 58000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: DO-200AE
Packaging: Tray
Description: SCR MODULE 2200V 5800A DO200AE
Voltage - Off State: 2.2 kV
Current - On State (It (RMS)) (Max): 5800 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 2810 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 58000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: DO-200AE
Packaging: Tray
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Мінімальне замовлення: 2 шт
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| TD120N16SOFHPSA1 |
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Виробник: Infineon Technologies
Description: THYRISTOR MODULE 1600V 120A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 130°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 250 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 119 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 190 A
Voltage - Off State: 1.6 kV
Description: THYRISTOR MODULE 1600V 120A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 130°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 250 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 119 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 190 A
Voltage - Off State: 1.6 kV
на замовлення 101 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2383.62 грн |
| 12+ | 1655.65 грн |
| 36+ | 1477.32 грн |
| 84+ | 1380.16 грн |
| DD220N16SHPSA1 |
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Виробник: Infineon Technologies
Description: DIODE MOD GP 1600V 273A BGPB34SB
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 273A
Supplier Device Package: BG-PB34SB-1
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.39 V @ 500 A
Current - Reverse Leakage @ Vr: 1 mA @ 1600 V
Description: DIODE MOD GP 1600V 273A BGPB34SB
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 273A
Supplier Device Package: BG-PB34SB-1
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.39 V @ 500 A
Current - Reverse Leakage @ Vr: 1 mA @ 1600 V
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| IPTG025N08NM5ATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH 40<-<100V PG-HSOG-8
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-HSOG-8-1
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 150A 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 184A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Gull Wing
Packaging: Cut Tape (CT)
Description: TRENCH 40<-<100V PG-HSOG-8
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-HSOG-8-1
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 150A 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 184A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Gull Wing
Packaging: Cut Tape (CT)
на замовлення 1780 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 323.14 грн |
| 10+ | 205.88 грн |
| 100+ | 146.41 грн |
| 500+ | 129.23 грн |
| IPTG017N12NM6ATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH >=100V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: PG-HSOG-8-1
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 331A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Gull Wing
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Description: TRENCH >=100V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: PG-HSOG-8-1
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 331A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Gull Wing
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
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Мінімальне замовлення: 1800 шт
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| IPTG017N12NM6ATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH >=100V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: PG-HSOG-8-1
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 331A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Gull Wing
Packaging: Cut Tape (CT)
Description: TRENCH >=100V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: PG-HSOG-8-1
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 331A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Gull Wing
Packaging: Cut Tape (CT)
на замовлення 1346 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 595.90 грн |
| 10+ | 391.01 грн |
| 100+ | 287.56 грн |
| 500+ | 240.99 грн |
| ISC130N20NM6ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 242W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 135µA
Supplier Device Package: PG-TSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 100 V
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 242W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 135µA
Supplier Device Package: PG-TSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 100 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 163.78 грн |
| ISC130N20NM6ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 242W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 135µA
Supplier Device Package: PG-TSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 100 V
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 242W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 135µA
Supplier Device Package: PG-TSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 100 V
на замовлення 5450 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 316.94 грн |
| 10+ | 267.22 грн |
| 100+ | 193.14 грн |
| 500+ | 181.16 грн |
| CY90F546GPFR-GE1 |
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Виробник: Infineon Technologies
Description: IC MCU 16BIT 256KB FLASH 100QFP
DigiKey Programmable: Not Verified
Number of I/O: 81
Supplier Device Package: 100-QFP (14x20)
Peripherals: POR, WDT
Connectivity: CANbus, EBI/EMI, SCI, Serial I/O, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 8x8/10b
Core Processor: F²MC-16LX
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 8K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 100-BQFP
Packaging: Tray
Description: IC MCU 16BIT 256KB FLASH 100QFP
DigiKey Programmable: Not Verified
Number of I/O: 81
Supplier Device Package: 100-QFP (14x20)
Peripherals: POR, WDT
Connectivity: CANbus, EBI/EMI, SCI, Serial I/O, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 8x8/10b
Core Processor: F²MC-16LX
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 8K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 100-BQFP
Packaging: Tray
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| KITXMC1300DCV1TOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR XMC1300
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: XMC1300
Supplied Contents: Board(s)
Primary Attributes: Motors (BLDC)
Embedded: Yes, MCU
Contents: Board(s)
Description: EVAL BOARD FOR XMC1300
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: XMC1300
Supplied Contents: Board(s)
Primary Attributes: Motors (BLDC)
Embedded: Yes, MCU
Contents: Board(s)
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 5467.75 грн |
| FS450R17OE4BOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1700V 630A 2400W
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 2400 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 630 A
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 450A
Operating Temperature: -40°C ~ 150°C
Configuration: Full Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Description: IGBT MOD 1700V 630A 2400W
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 2400 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 630 A
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 450A
Operating Temperature: -40°C ~ 150°C
Configuration: Full Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 35999.11 грн |
| FF1500R12IE5PBPSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 1500A AGPRIME3+-5
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1.5kA
NTC Thermistor: Yes
Supplier Device Package: AG-PRIME3+-5
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Description: IGBT MOD 1200V 1500A AGPRIME3+-5
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1.5kA
NTC Thermistor: Yes
Supplier Device Package: AG-PRIME3+-5
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
на замовлення 297 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 63570.32 грн |
| FF1500R12IE5PBPSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 1500A AGPRIME3+-5
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1.5kA
NTC Thermistor: Yes
Supplier Device Package: AG-PRIME3+-5
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Description: IGBT MOD 1200V 1500A AGPRIME3+-5
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1.5kA
NTC Thermistor: Yes
Supplier Device Package: AG-PRIME3+-5
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 53144.72 грн |
| FF150R17ME3GBOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1700V 240A 1050W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 13.5 nF @ 25 V
Description: IGBT MOD 1700V 240A 1050W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 13.5 nF @ 25 V
товару немає в наявності
Мінімальне замовлення: 10 шт
В кошику
од. на суму грн.
| C161SLM3VAABXUMA1 |
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Виробник: Infineon Technologies
Description: SAB-C161S - LEGACY 16-BIT MICROC
Speed: 20MHz
Mounting Type: Surface Mount
Package / Case: 80-QFP
Packaging: Bulk
DigiKey Programmable: Not Verified
Number of I/O: 63
Supplier Device Package: PG-MQFP-80-7
Peripherals: POR, PWM, WDT
Connectivity: EBI/EMI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Core Size: 16-Bit
Core Processor: C166
Program Memory Type: ROMless
Oscillator Type: External
Operating Temperature: 0°C ~ 70°C (TA)
RAM Size: 2K x 8
Description: SAB-C161S - LEGACY 16-BIT MICROC
Speed: 20MHz
Mounting Type: Surface Mount
Package / Case: 80-QFP
Packaging: Bulk
DigiKey Programmable: Not Verified
Number of I/O: 63
Supplier Device Package: PG-MQFP-80-7
Peripherals: POR, PWM, WDT
Connectivity: EBI/EMI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Core Size: 16-Bit
Core Processor: C166
Program Memory Type: ROMless
Oscillator Type: External
Operating Temperature: 0°C ~ 70°C (TA)
RAM Size: 2K x 8
на замовлення 2247 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 59+ | 340.57 грн |










































