Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (126723) > Сторінка 719 з 2113
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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IMBG40R015M2HXTMA1 | Infineon Technologies |
Description: SIC-MOSPackaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 111A (Tc) Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V Power Dissipation (Max): 3.8W (Ta), 341W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 9.7mA Supplier Device Package: PG-TO263-7-11 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 200 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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IPB65R225C7ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 11A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 4V @ 240µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IDWD120E120D7XKSA1 | Infineon Technologies |
Description: DIODE GEN PURP 1200V 177A TO247Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 5A (Io) Reverse Recovery Time (trr): 215 ns Technology: Standard Current - Average Rectified (Io): 177A Supplier Device Package: PG-TO247-2-2 Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3 V @ 120 A Current - Reverse Leakage @ Vr: 20 µA @ 1200 V |
на замовлення 184 шт: термін постачання 21-31 дні (днів) |
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IPAW70R950CEXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 700V 7.4A TO220-3-31Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V Drain to Source Voltage (Vdss): 700 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO220-3-FP Vgs(th) (Max) @ Id: 3.5V @ 150µA Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Bulk |
на замовлення 10800 шт: термін постачання 21-31 дні (днів) |
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| CY91F527USDPMC-GSE2 | Infineon Technologies |
Description: IC MCU 32BT 1.5625MB FLSH 176QFP Packaging: Tray Package / Case: 176-LQFP Mounting Type: Surface Mount Speed: 128MHz Program Memory Size: 1.5625MB (1.5625M x 8) RAM Size: 208K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH EEPROM Size: 64K x 8 Core Processor: FR81S Data Converters: A/D 48x12b SAR; D/A 2x8b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, EBI/EMI, FlexRay, I2C, LINbus, UART/USART Peripherals: DMA, LVD, PWM, WDT Supplier Device Package: 176-LQFP (24x24) Number of I/O: 115 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 400 шт В кошику од. на суму грн. | |||||||||||||||
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CY3201-06 | Infineon Technologies |
Description: MCU EMULATOR POD FOR 20-SSOP Packaging: Bulk For Use With/Related Products: CY8C26233 Accessory Type: Emulation Pod |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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CY3201-07 | Infineon Technologies |
Description: MCU EMULATOR POD FOR 28-SOIC Packaging: Bulk For Use With/Related Products: CY8C26443 Accessory Type: Emulation Pod |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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CY3207ISSP | Infineon Technologies |
Description: PSOC USB IN-SYSTEM PROGRAMMERPackaging: Bulk For Use With/Related Products: PSoC Mixed Signal Arrays Type: Programmer Contents: Board(s), Cable(s), Power Supply |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY3203A-CAPSENSE | Infineon Technologies |
Description: KIT EVAL CAPSENSE CSAPackaging: Bulk Interface: LCD Voltage - Supply: 5V, USB Sensor Type: Touch, Capacitive Utilized IC / Part: CY8C20x34 Supplied Contents: Board(s), Cable(s), Accessories Embedded: Yes, MCU, 8-Bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE94108ELXUMA1 | Infineon Technologies |
Description: IC HALF BRIDGE DRVR 500MA 24SSOPPackaging: Bulk Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Interface: SPI Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (8) Voltage - Supply: 3V ~ 5.5V Rds On (Typ): 850mOhm LS, 850mOhm HS Applications: AC Motors, DC Motors, General Purpose Current - Output / Channel: 500mA Current - Peak Output: 2A Technology: Power MOSFET Voltage - Load: 5.5V ~ 20V Supplier Device Package: PG-SSOP-24-4 Fault Protection: Over Temperature, Short Circuit, UVLO Load Type: Inductive |
на замовлення 8914 шт: термін постачання 21-31 дні (днів) |
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| TLE7233EMXUMA1 | Infineon Technologies |
Description: IC PWR DRIVER N-CHAN 1:4 24-SSOPPackaging: Tape & Reel (TR) Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 4 Interface: SPI Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 1Ohm Voltage - Load: 4.5V ~ 5.5V Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Current - Output (Max): 470mA Ratio - Input:Output: 1:4 Supplier Device Package: PG-SSOP-24-4 Fault Protection: Open Load Detect, Over Temperature Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||
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DZ540N26KHPSA1 | Infineon Technologies |
Description: DIODE GEN PURP 2.6KV 732A MODULEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 732A Supplier Device Package: Module Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 2600 V Voltage - Forward (Vf) (Max) @ If: 1.64 V @ 2200 A Current - Reverse Leakage @ Vr: 40 mA @ 2600 V |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||
| T740N26TOFPRXOSA1 | Infineon Technologies |
Description: DIODE BG-T5814K0-1 Packaging: Tray Package / Case: TO-200AB, A-PUK Mounting Type: Clamp On Operating Temperature: -40°C ~ 125°C Structure: Single Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 13000A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 745 A Voltage - Gate Trigger (Vgt) (Max): 2.2 V Current - On State (It (RMS)) (Max): 1500 A Voltage - Off State: 2.6 kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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ISZ173N15NM6ATMA1 | Infineon Technologies |
Description: TRENCH >=100VPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 48A (Tc) Rds On (Max) @ Id, Vgs: 16.3mOhm @ 16A, 15V Power Dissipation (Max): 2.5W (Ta), 94W (Tc) Vgs(th) (Max) @ Id: 4V @ 35µA Supplier Device Package: PG-TSDSON-8 FL Drive Voltage (Max Rds On, Min Rds On): 8V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 75 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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ISZ173N15NM6ATMA1 | Infineon Technologies |
Description: TRENCH >=100VPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 48A (Tc) Rds On (Max) @ Id, Vgs: 16.3mOhm @ 16A, 15V Power Dissipation (Max): 2.5W (Ta), 94W (Tc) Vgs(th) (Max) @ Id: 4V @ 35µA Supplier Device Package: PG-TSDSON-8 FL Drive Voltage (Max Rds On, Min Rds On): 8V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 75 V |
на замовлення 5878 шт: термін постачання 21-31 дні (днів) |
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IPQC60R010S7AXTMA1 | Infineon Technologies |
Description: MOSFETPackaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V Power Dissipation (Max): 694W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 3.08mA Supplier Device Package: PG-HDSOP-22 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 750 шт В кошику од. на суму грн. | ||||||||||||||
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IPQC60R010S7AXTMA1 | Infineon Technologies |
Description: MOSFETPackaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V Power Dissipation (Max): 694W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 3.08mA Supplier Device Package: PG-HDSOP-22 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V Qualification: AEC-Q101 |
на замовлення 660 шт: термін постачання 21-31 дні (днів) |
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CY29942AXCT | Infineon Technologies |
Description: IC CLK BUFFER 1:18 200MHZ 32TQFPPackaging: Bulk Package / Case: 32-LQFP Number of Circuits: 1 Mounting Type: Surface Mount Output: LVCMOS, LVTTL Type: Fanout Buffer (Distribution) Input: LVCMOS, LVTTL Operating Temperature: 0°C ~ 70°C Voltage - Supply: 2.375V ~ 3.465V Ratio - Input:Output: 1:18 Differential - Input:Output: No/No Supplier Device Package: 32-TQFP (7x7) Frequency - Max: 200 MHz |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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| TLE5046MTICPW2100HALA1 | Infineon Technologies |
Description: SPEED & CURRENT SENSORS Packaging: Tape & Box (TB) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||||
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DD600N18KXPSA1 | Infineon Technologies |
Description: DIODE MODULE GP 1800V BGPB60E2A1Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 600A Supplier Device Package: BG-PB60E2A-1 Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 1800 V Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1.8 kA Current - Reverse Leakage @ Vr: 40 mA @ 1800 V |
товару немає в наявності |
Мінімальне замовлення: 2 шт В кошику од. на суму грн. | ||||||||||||||
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IRAM136-1060A | Infineon Technologies |
Description: IC MOD PWR HYBRID 600V 10A MOTORPackaging: Tube Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 2000Vrms Current: 10 A Voltage: 600 V |
на замовлення 99 шт: термін постачання 21-31 дні (днів) |
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IRAM136-1060A | Infineon Technologies |
Description: IC MOD PWR HYBRID 600V 10A MOTORPackaging: Tube Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 2000Vrms Current: 10 A Voltage: 600 V |
товару немає в наявності |
Мінімальне замовлення: 110 шт В кошику од. на суму грн. | ||||||||||||||
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CY23EP05SXC-1HT | Infineon Technologies |
Description: IC FANOUT BUFFER 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: LVCMOS Frequency - Max: 200MHz, 220MHz Type: Fanout Buffer (Distribution), Zero Delay Buffer Input: LVCMOS, LVTTL Operating Temperature: 0°C ~ 70°C Voltage - Supply: 2.5V, 3.3V Ratio - Input:Output: 1:5 Differential - Input:Output: No/No Supplier Device Package: 8-SOIC PLL: Yes Divider/Multiplier: No/No Number of Circuits: 1 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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S29PL032J55BFI070 | Infineon Technologies |
Description: IC FLASH 32MBIT PARALLEL 48VFBGADigiKey Programmable: Not Verified Memory Organization: 2M x 16 Access Time: 55 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 55ns Supplier Device Package: 48-VFBGA (8.15x6.15) Memory Format: FLASH Technology: FLASH - NOR Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 32Mbit Mounting Type: Surface Mount Package / Case: 48-VFBGA Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 3380 шт В кошику од. на суму грн. | ||||||||||||||
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TLV49462LHALA1 | Infineon Technologies |
Description: MAGNETIC SWITCH LATCH SSO-3-2Output Type: Open Drain Package / Case: 3-SSIP, SSO-3-02 Features: Temperature Compensated Packaging: Bulk Qualification: AEC-Q100 Grade: Automotive Test Condition: -40°C ~ 85°C Supplier Device Package: PG-SSO-3-2 Current - Supply (Max): 6mA Current - Output (Max): 20mA Sensing Range: 3.5mT Trip, -3.5mT Release Technology: Hall Effect Voltage - Supply: 2.7V ~ 18V Operating Temperature: -40°C ~ 85°C (TA) Function: Latch Mounting Type: Through Hole Polarization: South Pole |
на замовлення 28000 шт: термін постачання 21-31 дні (днів) |
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SLS32AIA010MSUSON10XTMA2 | Infineon Technologies |
Description: SECURITY ICS / AUTHENTICATION ICSupplier Device Package: PG-USON-10-2 Core Processor: 16-Bit Applications: Trusted Platform Module (TPM) Program Memory Type: NVM (10kB) Controller Series: OPTIGA™ Trust M Voltage - Supply: 1.62V ~ 5.5V Operating Temperature: -25°C ~ 85°C (TA) RAM Size: External Interface: I2C Mounting Type: Surface Mount Package / Case: 10-UFDFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||
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BSC034N03LSGATMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 22A/100A TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TDSON-8-5 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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CY7C2263KV18-550BZXC | Infineon Technologies |
Description: IC SRAM 36MBIT PARALLEL 165FBGAPackaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 36Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II+ Clock Frequency: 550 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Memory Organization: 2M x 18 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY7C2163KV18-450BZXI | Infineon Technologies |
Description: IC SRAM 18MBIT PAR 165FBGAPackaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II+ Clock Frequency: 450 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Memory Organization: 1M x 18 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY7C2245KV18-450BZXI | Infineon Technologies |
Description: IC SRAM 36MBIT PAR 165FBGAPackaging: Bulk Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 36Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II+ Clock Frequency: 450 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Memory Organization: 1M x 36 DigiKey Programmable: Not Verified |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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CY9AF111LPMC-G-MJE1 | Infineon Technologies |
Description: IC MCU 32BIT LQFP Packaging: Tray DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1190 шт В кошику од. на суму грн. | ||||||||||||||
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CY9AF111MAPMC-G-MJE1 | Infineon Technologies |
Description: IC MCU 32BIT FLASH LQFP Packaging: Tray DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1190 шт В кошику од. на суму грн. | ||||||||||||||
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S25HS512TDPBHI013 | Infineon Technologies |
Description: IC FLASH 512MBIT SPI/QUAD 24FBGAPackaging: Tape & Reel (TR) Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 24-FBGA (6x8) Memory Interface: SPI - Quad I/O, QPI Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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S25HS512TDPBHB013 | Infineon Technologies |
Description: IC FLASH 512MBIT SPI/QUAD 24FBGAPackaging: Tape & Reel (TR) Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 24-FBGA (6x8) Memory Interface: SPI - Quad I/O, QPI Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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S25HS512TDPBHB010 | Infineon Technologies |
Description: IC FLASH 512MBIT SPI/QUAD 24BGAPackaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 24-BGA (8x6) Memory Interface: SPI - Quad I/O, QPI Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 676 шт В кошику од. на суму грн. | ||||||||||||||
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S25HS02GTDPBHB053 | Infineon Technologies |
Description: IC FLASH 2GBIT SPI/QUAD 24BGA Packaging: Tape & Reel (TR) Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 24-BGA (8x6) Write Cycle Time - Word, Page: 1.7ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 256M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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S25HS02GTDZBHB053 | Infineon Technologies |
Description: IC FLASH 2GBIT SPI/QUAD 24BGA Packaging: Tape & Reel (TR) Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 24-BGA (8x6) Write Cycle Time - Word, Page: 1.7ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 256M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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CY7C1911KV18-300BZXC | Infineon Technologies |
Description: IC SRAM 18MBIT PARALLEL 165FBGAPackaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II Clock Frequency: 300 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Memory Organization: 2M x 9 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 680 шт В кошику од. на суму грн. | ||||||||||||||
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DD104N12KHPSA1 | Infineon Technologies |
Description: DIODE MODULE GP 1.2KV 104ACurrent - Reverse Leakage @ Vr: 20 mA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 300 A Voltage - DC Reverse (Vr) (Max): 1200 V Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: Module Current - Average Rectified (Io) (per Diode): 104A Diode Configuration: 1 Pair Common Cathode Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY9BF365KPMC-G-JNE2 | Infineon Technologies |
Description: IC MCU 32BIT 416KB FLASH 48LQFPDigiKey Programmable: Not Verified Number of I/O: 33 Supplier Device Package: 48-LQFP (7x7) Peripherals: DMA, LVD, POR, PWM, WDT Connectivity: CSIO, I2C, LINbus, UART/USART, USB Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Single-Core Data Converters: A/D 8x12b; D/A 2x12b Core Processor: ARM® Cortex®-M4F Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 48K x 8 Program Memory Size: 416KB (416K x 8) Speed: 160MHz Mounting Type: Surface Mount Package / Case: 48-LQFP Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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S25FL128SAGMFIR13 | Infineon Technologies |
Description: IC FLASH 128MBIT SPI/QUAD 16SOICSupplier Device Package: 16-SOIC Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 16-SOIC (0.295", 7.50mm Width) Packaging: Tape & Reel (TR) Memory Type: Non-Volatile Memory Size: 128Mbit Mounting Type: Surface Mount DigiKey Programmable: Not Verified Memory Organization: 16M x 8 Memory Interface: SPI - Quad I/O Memory Format: FLASH Clock Frequency: 133 MHz Technology: FLASH - NOR |
товару немає в наявності |
Мінімальне замовлення: 1450 шт В кошику од. на суму грн. | ||||||||||||||
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S25FL128SAGMFIR13 | Infineon Technologies |
Description: IC FLASH 128MBIT SPI/QUAD 16SOICSupplier Device Package: 16-SOIC Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 16-SOIC (0.295", 7.50mm Width) Packaging: Cut Tape (CT) Memory Type: Non-Volatile Memory Size: 128Mbit Mounting Type: Surface Mount DigiKey Programmable: Not Verified Memory Organization: 16M x 8 Memory Interface: SPI - Quad I/O Memory Format: FLASH Clock Frequency: 133 MHz Technology: FLASH - NOR |
на замовлення 1241 шт: термін постачання 21-31 дні (днів) |
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S6E1A12C0AGN20000 | Infineon Technologies |
Description: IC MCU 32BIT 88KB FLASH 48QFNOscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 6K x 8 Program Memory Size: 88KB (88K x 8) Speed: 40MHz Mounting Type: Surface Mount Package / Case: 48-WFQFN Exposed Pad Packaging: Tray DigiKey Programmable: Not Verified Number of I/O: 37 Supplier Device Package: 48-QFN (7x7) Peripherals: DMA, LVD, POR, PWM, WDT Connectivity: CSIO, I2C, LINbus, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Single-Core Data Converters: A/D 8x12b Core Processor: ARM® Cortex®-M0+ Program Memory Type: FLASH |
товару немає в наявності |
Мінімальне замовлення: 2600 шт В кошику од. на суму грн. | ||||||||||||||
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S6E1A12C0AGN2B000 | Infineon Technologies |
Description: IC MCU 32BIT 88KB FLASH 48QFNDigiKey Programmable: Not Verified Number of I/O: 37 Supplier Device Package: 48-QFN (7x7) Peripherals: DMA, LVD, POR, PWM, WDT Connectivity: CSIO, I2C, LINbus, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Single-Core Data Converters: A/D 8x12b Core Processor: ARM® Cortex®-M0+ Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 6K x 8 Program Memory Size: 88KB (88K x 8) Speed: 40MHz Mounting Type: Surface Mount Package / Case: 48-WFQFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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S6E1A12B0AGP2B000 | Infineon Technologies |
Description: MM-LEGACY MMNumber of I/O: 37 Supplier Device Package: 32-LQFP (7x7) Peripherals: DMA, LVD, POR, PWM, WDT Connectivity: CSIO, I2C, LINbus, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 8x12b Core Processor: ARM® Cortex®-M0+ Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 6K x 8 Program Memory Size: 88KB (88K x 8) Speed: 40MHz Mounting Type: Surface Mount Package / Case: 32-LQFP Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||
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IAUCN08S7N013ATMA1 | Infineon Technologies |
Description: MOSFET_(75V 120V(Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 8402 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Grade: Automotive Supplier Device Package: PG-TDSON-8-53 Vgs(th) (Max) @ Id: 3.2V @ 130µA Power Dissipation (Max): 219W (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 88A, 10V Current - Continuous Drain (Id) @ 25°C: 274A (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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IAUCN08S7N013ATMA1 | Infineon Technologies |
Description: MOSFET_(75V 120V(Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 8402 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Grade: Automotive Supplier Device Package: PG-TDSON-8-53 Vgs(th) (Max) @ Id: 3.2V @ 130µA Power Dissipation (Max): 219W (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 88A, 10V Current - Continuous Drain (Id) @ 25°C: 274A (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 11509 шт: термін постачання 21-31 дні (днів) |
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IQD009N06NM5CGATMA1 | Infineon Technologies |
Description: OPTIMOS 6 POWER-TRANSISTORInput Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: PG-TTFN-9-U02 Vgs(th) (Max) @ Id: 3.3V @ 163µA Power Dissipation (Max): 3W (Ta), 333W (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 445A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 9-PowerTDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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IQD009N06NM5CGATMA1 | Infineon Technologies |
Description: OPTIMOS 6 POWER-TRANSISTORTechnology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 9-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: PG-TTFN-9-U02 Vgs(th) (Max) @ Id: 3.3V @ 163µA Power Dissipation (Max): 3W (Ta), 333W (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 445A (Tc) FET Type: N-Channel |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SAK-TC233LP-32F200N AC | Infineon Technologies |
Description: IC MCU 32BIT 2MB FLASH 100TQFPDigiKey Programmable: Not Verified Number of I/O: 78 Supplier Device Package: PG-TQFP-100-23 Peripherals: DMA, PWM, WDT Connectivity: CANbus, FlexRay, LINbus, QSPI Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V Core Size: 32-Bit Single-Core Data Converters: A/D 24x12b SAR Core Processor: TriCore™ EEPROM Size: 128K x 8 Program Memory Type: FLASH Oscillator Type: External Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 192K x 8 Program Memory Size: 2MB (2M x 8) Speed: 200MHz Mounting Type: Surface Mount Package / Case: 100-TQFP Exposed Pad Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY8C22345-12PVXE | Infineon Technologies |
Description: IC MCU 8BIT 16KB FLASH 28SSOPDigiKey Programmable: Not Verified Number of I/O: 24 Supplier Device Package: 28-SSOP Peripherals: LVD, POR, PWM, WDT Connectivity: I2C, IrDA, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.25V Core Size: 8-Bit Data Converters: A/D 3x10b Core Processor: M8C Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 1K x 8 Program Memory Size: 16KB (16K x 8) Speed: 12MHz Mounting Type: Surface Mount Package / Case: 28-SSOP (0.209", 5.30mm Width) Packaging: Bulk |
на замовлення 1033 шт: термін постачання 21-31 дні (днів) |
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TLE4276GVATMA4 | Infineon Technologies |
Description: IC REG LIN POS ADJ 400MA TO220-5Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRF7580MTRPBF | Infineon Technologies |
Description: IRF7580 - 12V-300V N-CHANNEL POWPackage / Case: DirectFET™ Isometric ME Packaging: Bulk Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: DirectFET™ Isometric ME Vgs(th) (Max) @ Id: 3.7V @ 150µA Power Dissipation (Max): 115W (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 70A, 10V Current - Continuous Drain (Id) @ 25°C: 114A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
на замовлення 1536 шт: термін постачання 21-31 дні (днів) |
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IPB60R250CPATMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 12A TO263-3Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 440µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSP603S2LHUMA1 | Infineon Technologies |
Description: MOSFET N-CH 55V 5.2A SOT223-4Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PG-SOT223-4 Vgs(th) (Max) @ Id: 2V @ 50µA Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 33mOhm @ 2.6A, 10V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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S25FL064LABBHA020 | Infineon Technologies |
Description: IC FLASH 64MBIT SPI/QUAD 24BGAGrade: Automotive Supplier Device Package: 24-BGA (8x6) Memory Format: FLASH Clock Frequency: 108 MHz Technology: FLASH - NOR Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 64Mbit Mounting Type: Surface Mount Package / Case: 24-TBGA Packaging: Tray Memory Organization: 8M x 8 Memory Interface: SPI - Quad I/O, QPI Qualification: AEC-Q100 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 3380 шт В кошику од. на суму грн. | ||||||||||||||
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S25FL064LABBHA023 | Infineon Technologies |
Description: IC FLASH 64MBIT SPI/QUAD 24BGAQualification: AEC-Q100 DigiKey Programmable: Not Verified Memory Organization: 8M x 8 Memory Interface: SPI - Quad I/O, QPI Grade: Automotive Supplier Device Package: 24-BGA (8x6) Memory Format: FLASH Clock Frequency: 108 MHz Technology: FLASH - NOR Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 64Mbit Mounting Type: Surface Mount Package / Case: 24-TBGA Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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S25FL064LABBHB020 | Infineon Technologies |
Description: IC FLASH 64MBIT SPI/QUAD 24BGAQualification: AEC-Q100 DigiKey Programmable: Not Verified Memory Organization: 8M x 8 Memory Interface: SPI - Quad I/O, QPI Grade: Automotive Supplier Device Package: 24-BGA (8x6) Memory Format: FLASH Clock Frequency: 108 MHz Technology: FLASH - NOR Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Memory Type: Non-Volatile Memory Size: 64Mbit Mounting Type: Surface Mount Package / Case: 24-TBGA Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 3380 шт В кошику од. на суму грн. | ||||||||||||||
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BTS244ZE3062AATMA2 | Infineon Technologies |
Description: MOSFET N-CH 55V 35A TO263-5Qualification: AEC-Q101 Grade: Automotive Current - Continuous Drain (Id) @ 25°C: 35A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PG-TO263-5-2 Vgs(th) (Max) @ Id: 2V @ 130µA Power Dissipation (Max): 170W (Tc) FET Feature: Temperature Sensing Diode Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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SAK-TC275TP-64F200N DC | Infineon Technologies |
Description: IC MCU 32BIT 4MB FLASH 176LQFPPackaging: Cut Tape (CT) Package / Case: 176-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 4MB (4M x 8) RAM Size: 472K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 64K x 8 Core Processor: TriCore™ Data Converters: A/D 48x12b SAR, Sigma-Delta Core Size: 32-Bit Tri-Core Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT Peripherals: DMA, POR, WDT Supplier Device Package: PG-LQFP-176-22 Number of I/O: 169 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. |
| IMBG40R015M2HXTMA1 |
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Виробник: Infineon Technologies
Description: SIC-MOS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 111A (Tc)
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.7mA
Supplier Device Package: PG-TO263-7-11
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 200 V
Description: SIC-MOS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 111A (Tc)
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.7mA
Supplier Device Package: PG-TO263-7-11
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 200 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 419.53 грн |
| IPB65R225C7ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 11A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
Description: MOSFET N-CH 650V 11A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| IDWD120E120D7XKSA1 |
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Виробник: Infineon Technologies
Description: DIODE GEN PURP 1200V 177A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 5A (Io)
Reverse Recovery Time (trr): 215 ns
Technology: Standard
Current - Average Rectified (Io): 177A
Supplier Device Package: PG-TO247-2-2
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 120 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Description: DIODE GEN PURP 1200V 177A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 5A (Io)
Reverse Recovery Time (trr): 215 ns
Technology: Standard
Current - Average Rectified (Io): 177A
Supplier Device Package: PG-TO247-2-2
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 120 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
на замовлення 184 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 448.80 грн |
| 10+ | 390.49 грн |
| 25+ | 372.34 грн |
| IPAW70R950CEXKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 7.4A TO220-3-31
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3-FP
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Description: MOSFET N-CH 700V 7.4A TO220-3-31
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3-FP
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
на замовлення 10800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 483+ | 44.16 грн |
| CY91F527USDPMC-GSE2 |
Виробник: Infineon Technologies
Description: IC MCU 32BT 1.5625MB FLSH 176QFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 1.5625MB (1.5625M x 8)
RAM Size: 208K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 48x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, EBI/EMI, FlexRay, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 115
DigiKey Programmable: Not Verified
Description: IC MCU 32BT 1.5625MB FLSH 176QFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 1.5625MB (1.5625M x 8)
RAM Size: 208K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 48x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, EBI/EMI, FlexRay, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 115
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 400 шт
В кошику
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| CY3201-06 |
Виробник: Infineon Technologies
Description: MCU EMULATOR POD FOR 20-SSOP
Packaging: Bulk
For Use With/Related Products: CY8C26233
Accessory Type: Emulation Pod
Description: MCU EMULATOR POD FOR 20-SSOP
Packaging: Bulk
For Use With/Related Products: CY8C26233
Accessory Type: Emulation Pod
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4940.74 грн |
| CY3201-07 |
Виробник: Infineon Technologies
Description: MCU EMULATOR POD FOR 28-SOIC
Packaging: Bulk
For Use With/Related Products: CY8C26443
Accessory Type: Emulation Pod
Description: MCU EMULATOR POD FOR 28-SOIC
Packaging: Bulk
For Use With/Related Products: CY8C26443
Accessory Type: Emulation Pod
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4540.31 грн |
| CY3207ISSP |
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Виробник: Infineon Technologies
Description: PSOC USB IN-SYSTEM PROGRAMMER
Packaging: Bulk
For Use With/Related Products: PSoC Mixed Signal Arrays
Type: Programmer
Contents: Board(s), Cable(s), Power Supply
Description: PSOC USB IN-SYSTEM PROGRAMMER
Packaging: Bulk
For Use With/Related Products: PSoC Mixed Signal Arrays
Type: Programmer
Contents: Board(s), Cable(s), Power Supply
товару немає в наявності
В кошику
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| CY3203A-CAPSENSE |
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Виробник: Infineon Technologies
Description: KIT EVAL CAPSENSE CSA
Packaging: Bulk
Interface: LCD
Voltage - Supply: 5V, USB
Sensor Type: Touch, Capacitive
Utilized IC / Part: CY8C20x34
Supplied Contents: Board(s), Cable(s), Accessories
Embedded: Yes, MCU, 8-Bit
Description: KIT EVAL CAPSENSE CSA
Packaging: Bulk
Interface: LCD
Voltage - Supply: 5V, USB
Sensor Type: Touch, Capacitive
Utilized IC / Part: CY8C20x34
Supplied Contents: Board(s), Cable(s), Accessories
Embedded: Yes, MCU, 8-Bit
товару немає в наявності
В кошику
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| TLE94108ELXUMA1 |
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Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRVR 500MA 24SSOP
Packaging: Bulk
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (8)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 850mOhm LS, 850mOhm HS
Applications: AC Motors, DC Motors, General Purpose
Current - Output / Channel: 500mA
Current - Peak Output: 2A
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 20V
Supplier Device Package: PG-SSOP-24-4
Fault Protection: Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Description: IC HALF BRIDGE DRVR 500MA 24SSOP
Packaging: Bulk
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (8)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 850mOhm LS, 850mOhm HS
Applications: AC Motors, DC Motors, General Purpose
Current - Output / Channel: 500mA
Current - Peak Output: 2A
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 20V
Supplier Device Package: PG-SSOP-24-4
Fault Protection: Over Temperature, Short Circuit, UVLO
Load Type: Inductive
на замовлення 8914 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 179+ | 127.52 грн |
| TLE7233EMXUMA1 |
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Виробник: Infineon Technologies
Description: IC PWR DRIVER N-CHAN 1:4 24-SSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 1Ohm
Voltage - Load: 4.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 470mA
Ratio - Input:Output: 1:4
Supplier Device Package: PG-SSOP-24-4
Fault Protection: Open Load Detect, Over Temperature
Grade: Automotive
Qualification: AEC-Q100
Description: IC PWR DRIVER N-CHAN 1:4 24-SSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 1Ohm
Voltage - Load: 4.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 470mA
Ratio - Input:Output: 1:4
Supplier Device Package: PG-SSOP-24-4
Fault Protection: Open Load Detect, Over Temperature
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DZ540N26KHPSA1 |
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Виробник: Infineon Technologies
Description: DIODE GEN PURP 2.6KV 732A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 732A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2600 V
Voltage - Forward (Vf) (Max) @ If: 1.64 V @ 2200 A
Current - Reverse Leakage @ Vr: 40 mA @ 2600 V
Description: DIODE GEN PURP 2.6KV 732A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 732A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2600 V
Voltage - Forward (Vf) (Max) @ If: 1.64 V @ 2200 A
Current - Reverse Leakage @ Vr: 40 mA @ 2600 V
товару немає в наявності
Мінімальне замовлення: 3 шт
В кошику
од. на суму грн.
| T740N26TOFPRXOSA1 |
Виробник: Infineon Technologies
Description: DIODE BG-T5814K0-1
Packaging: Tray
Package / Case: TO-200AB, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 745 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 2.6 kV
Description: DIODE BG-T5814K0-1
Packaging: Tray
Package / Case: TO-200AB, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 745 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 2.6 kV
товару немає в наявності
В кошику
од. на суму грн.
| ISZ173N15NM6ATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 16A, 15V
Power Dissipation (Max): 2.5W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 75 V
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 16A, 15V
Power Dissipation (Max): 2.5W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 75 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 63.33 грн |
| ISZ173N15NM6ATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 16A, 15V
Power Dissipation (Max): 2.5W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 75 V
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 16A, 15V
Power Dissipation (Max): 2.5W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 75 V
на замовлення 5878 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 220.43 грн |
| 10+ | 137.52 грн |
| 100+ | 95.12 грн |
| 500+ | 72.26 грн |
| 1000+ | 69.88 грн |
| IPQC60R010S7AXTMA1 |
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Виробник: Infineon Technologies
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Qualification: AEC-Q101
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 750 шт
В кошику
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| IPQC60R010S7AXTMA1 |
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Виробник: Infineon Technologies
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Qualification: AEC-Q101
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Qualification: AEC-Q101
на замовлення 660 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1435.20 грн |
| 10+ | 1031.95 грн |
| 100+ | 947.36 грн |
| CY29942AXCT |
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Виробник: Infineon Technologies
Description: IC CLK BUFFER 1:18 200MHZ 32TQFP
Packaging: Bulk
Package / Case: 32-LQFP
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Type: Fanout Buffer (Distribution)
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:18
Differential - Input:Output: No/No
Supplier Device Package: 32-TQFP (7x7)
Frequency - Max: 200 MHz
Description: IC CLK BUFFER 1:18 200MHZ 32TQFP
Packaging: Bulk
Package / Case: 32-LQFP
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Type: Fanout Buffer (Distribution)
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:18
Differential - Input:Output: No/No
Supplier Device Package: 32-TQFP (7x7)
Frequency - Max: 200 MHz
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 1135.27 грн |
| TLE5046MTICPW2100HALA1 |
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| DD600N18KXPSA1 |
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Виробник: Infineon Technologies
Description: DIODE MODULE GP 1800V BGPB60E2A1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 600A
Supplier Device Package: BG-PB60E2A-1
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1.8 kA
Current - Reverse Leakage @ Vr: 40 mA @ 1800 V
Description: DIODE MODULE GP 1800V BGPB60E2A1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 600A
Supplier Device Package: BG-PB60E2A-1
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1.8 kA
Current - Reverse Leakage @ Vr: 40 mA @ 1800 V
товару немає в наявності
Мінімальне замовлення: 2 шт
В кошику
од. на суму грн.
| IRAM136-1060A |
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Виробник: Infineon Technologies
Description: IC MOD PWR HYBRID 600V 10A MOTOR
Packaging: Tube
Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 10 A
Voltage: 600 V
Description: IC MOD PWR HYBRID 600V 10A MOTOR
Packaging: Tube
Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 10 A
Voltage: 600 V
на замовлення 99 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 1044.43 грн |
| IRAM136-1060A |
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Виробник: Infineon Technologies
Description: IC MOD PWR HYBRID 600V 10A MOTOR
Packaging: Tube
Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 10 A
Voltage: 600 V
Description: IC MOD PWR HYBRID 600V 10A MOTOR
Packaging: Tube
Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 10 A
Voltage: 600 V
товару немає в наявності
Мінімальне замовлення: 110 шт
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| CY23EP05SXC-1HT |
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Виробник: Infineon Technologies
Description: IC FANOUT BUFFER 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 200MHz, 220MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.5V, 3.3V
Ratio - Input:Output: 1:5
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC FANOUT BUFFER 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 200MHz, 220MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.5V, 3.3V
Ratio - Input:Output: 1:5
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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Мінімальне замовлення: 2500 шт
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| S29PL032J55BFI070 |
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Виробник: Infineon Technologies
Description: IC FLASH 32MBIT PARALLEL 48VFBGA
DigiKey Programmable: Not Verified
Memory Organization: 2M x 16
Access Time: 55 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 55ns
Supplier Device Package: 48-VFBGA (8.15x6.15)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tray
Description: IC FLASH 32MBIT PARALLEL 48VFBGA
DigiKey Programmable: Not Verified
Memory Organization: 2M x 16
Access Time: 55 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 55ns
Supplier Device Package: 48-VFBGA (8.15x6.15)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tray
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Мінімальне замовлення: 3380 шт
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| TLV49462LHALA1 |
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Виробник: Infineon Technologies
Description: MAGNETIC SWITCH LATCH SSO-3-2
Output Type: Open Drain
Package / Case: 3-SSIP, SSO-3-02
Features: Temperature Compensated
Packaging: Bulk
Qualification: AEC-Q100
Grade: Automotive
Test Condition: -40°C ~ 85°C
Supplier Device Package: PG-SSO-3-2
Current - Supply (Max): 6mA
Current - Output (Max): 20mA
Sensing Range: 3.5mT Trip, -3.5mT Release
Technology: Hall Effect
Voltage - Supply: 2.7V ~ 18V
Operating Temperature: -40°C ~ 85°C (TA)
Function: Latch
Mounting Type: Through Hole
Polarization: South Pole
Description: MAGNETIC SWITCH LATCH SSO-3-2
Output Type: Open Drain
Package / Case: 3-SSIP, SSO-3-02
Features: Temperature Compensated
Packaging: Bulk
Qualification: AEC-Q100
Grade: Automotive
Test Condition: -40°C ~ 85°C
Supplier Device Package: PG-SSO-3-2
Current - Supply (Max): 6mA
Current - Output (Max): 20mA
Sensing Range: 3.5mT Trip, -3.5mT Release
Technology: Hall Effect
Voltage - Supply: 2.7V ~ 18V
Operating Temperature: -40°C ~ 85°C (TA)
Function: Latch
Mounting Type: Through Hole
Polarization: South Pole
на замовлення 28000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 868+ | 26.41 грн |
| SLS32AIA010MSUSON10XTMA2 |
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Виробник: Infineon Technologies
Description: SECURITY ICS / AUTHENTICATION IC
Supplier Device Package: PG-USON-10-2
Core Processor: 16-Bit
Applications: Trusted Platform Module (TPM)
Program Memory Type: NVM (10kB)
Controller Series: OPTIGA™ Trust M
Voltage - Supply: 1.62V ~ 5.5V
Operating Temperature: -25°C ~ 85°C (TA)
RAM Size: External
Interface: I2C
Mounting Type: Surface Mount
Package / Case: 10-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: SECURITY ICS / AUTHENTICATION IC
Supplier Device Package: PG-USON-10-2
Core Processor: 16-Bit
Applications: Trusted Platform Module (TPM)
Program Memory Type: NVM (10kB)
Controller Series: OPTIGA™ Trust M
Voltage - Supply: 1.62V ~ 5.5V
Operating Temperature: -25°C ~ 85°C (TA)
RAM Size: External
Interface: I2C
Mounting Type: Surface Mount
Package / Case: 10-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 4000 шт
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| BSC034N03LSGATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 22A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
Description: MOSFET N-CH 30V 22A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 109.42 грн |
| 10+ | 67.04 грн |
| 100+ | 44.73 грн |
| 500+ | 32.99 грн |
| 1000+ | 30.09 грн |
| 2000+ | 27.65 грн |
| CY7C2263KV18-550BZXC |
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Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
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| CY7C2163KV18-450BZXI |
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Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
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| CY7C2245KV18-450BZXI |
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Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 5450.43 грн |
| CY9AF111LPMC-G-MJE1 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1190 шт
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| CY9AF111MAPMC-G-MJE1 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT FLASH LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT FLASH LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
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Мінімальне замовлення: 1190 шт
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| S25HS512TDPBHI013 |
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Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT SPI/QUAD 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| S25HS512TDPBHB013 |
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Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT SPI/QUAD 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| S25HS512TDPBHB010 |
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Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 676 шт
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| S25HS02GTDPBHB053 |
Виробник: Infineon Technologies
Description: IC FLASH 2GBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 2GBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2000 шт
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| S25HS02GTDZBHB053 |
Виробник: Infineon Technologies
Description: IC FLASH 2GBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 2GBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2000 шт
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| CY7C1911KV18-300BZXC |
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Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 9
DigiKey Programmable: Not Verified
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 9
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 680 шт
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| DD104N12KHPSA1 |
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Виробник: Infineon Technologies
Description: DIODE MODULE GP 1.2KV 104A
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 300 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Module
Current - Average Rectified (Io) (per Diode): 104A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: DIODE MODULE GP 1.2KV 104A
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 300 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Module
Current - Average Rectified (Io) (per Diode): 104A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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| CY9BF365KPMC-G-JNE2 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 416KB FLASH 48LQFP
DigiKey Programmable: Not Verified
Number of I/O: 33
Supplier Device Package: 48-LQFP (7x7)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, I2C, LINbus, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 8x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 48K x 8
Program Memory Size: 416KB (416K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tray
Description: IC MCU 32BIT 416KB FLASH 48LQFP
DigiKey Programmable: Not Verified
Number of I/O: 33
Supplier Device Package: 48-LQFP (7x7)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, I2C, LINbus, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 8x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 48K x 8
Program Memory Size: 416KB (416K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| S25FL128SAGMFIR13 |
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Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Supplier Device Package: 16-SOIC
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Memory Type: Non-Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
DigiKey Programmable: Not Verified
Memory Organization: 16M x 8
Memory Interface: SPI - Quad I/O
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR
Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Supplier Device Package: 16-SOIC
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Memory Type: Non-Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
DigiKey Programmable: Not Verified
Memory Organization: 16M x 8
Memory Interface: SPI - Quad I/O
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR
товару немає в наявності
Мінімальне замовлення: 1450 шт
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| S25FL128SAGMFIR13 |
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Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Supplier Device Package: 16-SOIC
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Memory Type: Non-Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
DigiKey Programmable: Not Verified
Memory Organization: 16M x 8
Memory Interface: SPI - Quad I/O
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR
Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Supplier Device Package: 16-SOIC
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Memory Type: Non-Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
DigiKey Programmable: Not Verified
Memory Organization: 16M x 8
Memory Interface: SPI - Quad I/O
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR
на замовлення 1241 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 317.96 грн |
| 10+ | 285.42 грн |
| 25+ | 277.02 грн |
| 50+ | 253.97 грн |
| 100+ | 247.96 грн |
| 250+ | 240.05 грн |
| 500+ | 230.29 грн |
| S6E1A12C0AGN20000 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 88KB FLASH 48QFN
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 6K x 8
Program Memory Size: 88KB (88K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 48-WFQFN Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 37
Supplier Device Package: 48-QFN (7x7)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 8x12b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Description: IC MCU 32BIT 88KB FLASH 48QFN
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 6K x 8
Program Memory Size: 88KB (88K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 48-WFQFN Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 37
Supplier Device Package: 48-QFN (7x7)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 8x12b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
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Мінімальне замовлення: 2600 шт
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| S6E1A12C0AGN2B000 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 88KB FLASH 48QFN
DigiKey Programmable: Not Verified
Number of I/O: 37
Supplier Device Package: 48-QFN (7x7)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 8x12b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 6K x 8
Program Memory Size: 88KB (88K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 48-WFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC MCU 32BIT 88KB FLASH 48QFN
DigiKey Programmable: Not Verified
Number of I/O: 37
Supplier Device Package: 48-QFN (7x7)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 8x12b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 6K x 8
Program Memory Size: 88KB (88K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 48-WFQFN Exposed Pad
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 3000 шт
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| S6E1A12B0AGP2B000 |
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Виробник: Infineon Technologies
Description: MM-LEGACY MM
Number of I/O: 37
Supplier Device Package: 32-LQFP (7x7)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 8x12b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 6K x 8
Program Memory Size: 88KB (88K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 32-LQFP
Packaging: Tape & Reel (TR)
Description: MM-LEGACY MM
Number of I/O: 37
Supplier Device Package: 32-LQFP (7x7)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 8x12b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 6K x 8
Program Memory Size: 88KB (88K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 32-LQFP
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 1500 шт
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| IAUCN08S7N013ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET_(75V 120V(
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 8402 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Grade: Automotive
Supplier Device Package: PG-TDSON-8-53
Vgs(th) (Max) @ Id: 3.2V @ 130µA
Power Dissipation (Max): 219W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 88A, 10V
Current - Continuous Drain (Id) @ 25°C: 274A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET_(75V 120V(
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 8402 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Grade: Automotive
Supplier Device Package: PG-TDSON-8-53
Vgs(th) (Max) @ Id: 3.2V @ 130µA
Power Dissipation (Max): 219W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 88A, 10V
Current - Continuous Drain (Id) @ 25°C: 274A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 112.09 грн |
| IAUCN08S7N013ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET_(75V 120V(
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 8402 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Grade: Automotive
Supplier Device Package: PG-TDSON-8-53
Vgs(th) (Max) @ Id: 3.2V @ 130µA
Power Dissipation (Max): 219W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 88A, 10V
Current - Continuous Drain (Id) @ 25°C: 274A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET_(75V 120V(
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 8402 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Grade: Automotive
Supplier Device Package: PG-TDSON-8-53
Vgs(th) (Max) @ Id: 3.2V @ 130µA
Power Dissipation (Max): 219W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 88A, 10V
Current - Continuous Drain (Id) @ 25°C: 274A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 11509 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 338.58 грн |
| 10+ | 215.40 грн |
| 100+ | 152.57 грн |
| 500+ | 123.98 грн |
| IQD009N06NM5CGATMA1 |
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Виробник: Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TTFN-9-U02
Vgs(th) (Max) @ Id: 3.3V @ 163µA
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 445A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-PowerTDFN
Packaging: Tape & Reel (TR)
Description: OPTIMOS 6 POWER-TRANSISTOR
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TTFN-9-U02
Vgs(th) (Max) @ Id: 3.3V @ 163µA
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 445A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-PowerTDFN
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 5000 шт
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| IQD009N06NM5CGATMA1 |
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Виробник: Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TTFN-9-U02
Vgs(th) (Max) @ Id: 3.3V @ 163µA
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 445A (Tc)
FET Type: N-Channel
Description: OPTIMOS 6 POWER-TRANSISTOR
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TTFN-9-U02
Vgs(th) (Max) @ Id: 3.3V @ 163µA
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 445A (Tc)
FET Type: N-Channel
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| SAK-TC233LP-32F200N AC |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 100TQFP
DigiKey Programmable: Not Verified
Number of I/O: 78
Supplier Device Package: PG-TQFP-100-23
Peripherals: DMA, PWM, WDT
Connectivity: CANbus, FlexRay, LINbus, QSPI
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x12b SAR
Core Processor: TriCore™
EEPROM Size: 128K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 192K x 8
Program Memory Size: 2MB (2M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: 100-TQFP Exposed Pad
Packaging: Cut Tape (CT)
Description: IC MCU 32BIT 2MB FLASH 100TQFP
DigiKey Programmable: Not Verified
Number of I/O: 78
Supplier Device Package: PG-TQFP-100-23
Peripherals: DMA, PWM, WDT
Connectivity: CANbus, FlexRay, LINbus, QSPI
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x12b SAR
Core Processor: TriCore™
EEPROM Size: 128K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 192K x 8
Program Memory Size: 2MB (2M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: 100-TQFP Exposed Pad
Packaging: Cut Tape (CT)
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| CY8C22345-12PVXE |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 28SSOP
DigiKey Programmable: Not Verified
Number of I/O: 24
Supplier Device Package: 28-SSOP
Peripherals: LVD, POR, PWM, WDT
Connectivity: I2C, IrDA, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.25V
Core Size: 8-Bit
Data Converters: A/D 3x10b
Core Processor: M8C
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 1K x 8
Program Memory Size: 16KB (16K x 8)
Speed: 12MHz
Mounting Type: Surface Mount
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Packaging: Bulk
Description: IC MCU 8BIT 16KB FLASH 28SSOP
DigiKey Programmable: Not Verified
Number of I/O: 24
Supplier Device Package: 28-SSOP
Peripherals: LVD, POR, PWM, WDT
Connectivity: I2C, IrDA, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.25V
Core Size: 8-Bit
Data Converters: A/D 3x10b
Core Processor: M8C
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 1K x 8
Program Memory Size: 16KB (16K x 8)
Speed: 12MHz
Mounting Type: Surface Mount
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Packaging: Bulk
на замовлення 1033 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 52+ | 414.50 грн |
| TLE4276GVATMA4 |
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Виробник: Infineon Technologies
Description: IC REG LIN POS ADJ 400MA TO220-5
Packaging: Tape & Reel (TR)
Description: IC REG LIN POS ADJ 400MA TO220-5
Packaging: Tape & Reel (TR)
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| IRF7580MTRPBF |
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Виробник: Infineon Technologies
Description: IRF7580 - 12V-300V N-CHANNEL POW
Package / Case: DirectFET™ Isometric ME
Packaging: Bulk
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DirectFET™ Isometric ME
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: IRF7580 - 12V-300V N-CHANNEL POW
Package / Case: DirectFET™ Isometric ME
Packaging: Bulk
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DirectFET™ Isometric ME
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
на замовлення 1536 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 239+ | 95.13 грн |
| IPB60R250CPATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
Description: MOSFET N-CH 600V 12A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
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| BSP603S2LHUMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 5.2A SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 2V @ 50µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 55V 5.2A SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 2V @ 50µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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| S25FL064LABBHA020 |
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Виробник: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 24BGA
Grade: Automotive
Supplier Device Package: 24-BGA (8x6)
Memory Format: FLASH
Clock Frequency: 108 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tray
Memory Organization: 8M x 8
Memory Interface: SPI - Quad I/O, QPI
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Description: IC FLASH 64MBIT SPI/QUAD 24BGA
Grade: Automotive
Supplier Device Package: 24-BGA (8x6)
Memory Format: FLASH
Clock Frequency: 108 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tray
Memory Organization: 8M x 8
Memory Interface: SPI - Quad I/O, QPI
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 3380 шт
В кошику
од. на суму грн.
| S25FL064LABBHA023 |
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Виробник: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 24BGA
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 8M x 8
Memory Interface: SPI - Quad I/O, QPI
Grade: Automotive
Supplier Device Package: 24-BGA (8x6)
Memory Format: FLASH
Clock Frequency: 108 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tape & Reel (TR)
Description: IC FLASH 64MBIT SPI/QUAD 24BGA
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 8M x 8
Memory Interface: SPI - Quad I/O, QPI
Grade: Automotive
Supplier Device Package: 24-BGA (8x6)
Memory Format: FLASH
Clock Frequency: 108 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| S25FL064LABBHB020 |
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Виробник: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 24BGA
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 8M x 8
Memory Interface: SPI - Quad I/O, QPI
Grade: Automotive
Supplier Device Package: 24-BGA (8x6)
Memory Format: FLASH
Clock Frequency: 108 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tray
Description: IC FLASH 64MBIT SPI/QUAD 24BGA
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 8M x 8
Memory Interface: SPI - Quad I/O, QPI
Grade: Automotive
Supplier Device Package: 24-BGA (8x6)
Memory Format: FLASH
Clock Frequency: 108 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 3380 шт
В кошику
од. на суму грн.
| BTS244ZE3062AATMA2 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 35A TO263-5
Qualification: AEC-Q101
Grade: Automotive
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO263-5-2
Vgs(th) (Max) @ Id: 2V @ 130µA
Power Dissipation (Max): 170W (Tc)
FET Feature: Temperature Sensing Diode
Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V
Description: MOSFET N-CH 55V 35A TO263-5
Qualification: AEC-Q101
Grade: Automotive
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO263-5-2
Vgs(th) (Max) @ Id: 2V @ 130µA
Power Dissipation (Max): 170W (Tc)
FET Feature: Temperature Sensing Diode
Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 104+ | 202.17 грн |
| SAK-TC275TP-64F200N DC |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 176LQFP
Packaging: Cut Tape (CT)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 48x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LQFP-176-22
Number of I/O: 169
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 4MB FLASH 176LQFP
Packaging: Cut Tape (CT)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 48x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LQFP-176-22
Number of I/O: 169
DigiKey Programmable: Not Verified
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