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9021933 Infineon Technologies Description: INFINEON
Packaging: Bulk
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CY2548QIT CY2548QIT Infineon Technologies download Description: IC CLOCK GENERATOR 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Clock Generator
Input: LVCMOS
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 4
DigiKey Programmable: Not Verified
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DD600N16KHPSA3 DD600N16KHPSA3 Infineon Technologies Infineon-DD600N-DS-v03_02-EN.pdf?fileId=db3a304412b407950112b42fbcc44d54 Description: DIODE MODULE GP 1.6KV 600A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 600A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1800 A
Current - Reverse Leakage @ Vr: 40 mA @ 1600 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+22277.90 грн
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S6J32BAKSESE2000A Infineon Technologies Infineon-S6J3200_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v18_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ee0c1436670&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_int Description: IC MCU 32B 2.112MB FLASH 208TQFP
Packaging: Tray
Package / Case: 208-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 2.112MB (2.112M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 50x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.15V ~ 5.5V
Connectivity: CANbus, CSIO, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 208-TQFP (28x28)
Number of I/O: 120
DigiKey Programmable: Not Verified
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CY8C4147AZSS598XQLA1 CY8C4147AZSS598XQLA1 Infineon Technologies Infineon-CY8C4149AZS-S575-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c8929aa4d018a21719a00247e Description: IC MCU 32BIT 128KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, I2S, DMA, LCD, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 100-TQFP (14x14)
Grade: Automotive
Number of I/O: 84
Qualification: AEC-Q100
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ESD3V3U1U-02LS E6327 ESD3V3U1U-02LS E6327 Infineon Technologies ESD3V3U1U.pdf Description: TVS DIODE 3.3VWM 28VC PGTSSLP21
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1GHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSSLP-2-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 28V (Typ)
Power Line Protection: No
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ESD3V3U1U-02LS E6327 ESD3V3U1U-02LS E6327 Infineon Technologies ESD3V3U1U.pdf Description: TVS DIODE 3.3VWM 28VC PGTSSLP21
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1GHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSSLP-2-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 28V (Typ)
Power Line Protection: No
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ESD5V0H1U-02LS E6327 ESD5V0H1U-02LS E6327 Infineon Technologies ESD5V0H1U-02LS.pdf Description: TVS DIODE 5VWM 40VC PGTSSLP21
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.27pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: PG-TSSLP-2-1
Unidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 40V (Typ)
Power Line Protection: No
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ESD24VL1B-02LS E6327 ESD24VL1B-02LS E6327 Infineon Technologies ESD24VL1B+Series_rev_1_1ESD_Transient_Protection_Diode_Infineon.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433899edae01389eb4ba7d508e Description: TVS DIODE 24VWM 55VC TSSLP-2-1
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 2.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: PG-TSSLP-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.3V
Voltage - Clamping (Max) @ Ipp: 55V (Typ)
Power Line Protection: No
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ESD3V3S1B02LSE6327XTSA1 ESD3V3S1B02LSE6327XTSA1 Infineon Technologies ESD3V3S1B.pdf Description: TVS DIODE 3.3VWM 6.8VC PGTSSLP21
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 14pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSSLP-2-1
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 6.8V (Typ)
Power Line Protection: No
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ESD3V3S1B02LSE6327XTSA1 ESD3V3S1B02LSE6327XTSA1 Infineon Technologies ESD3V3S1B.pdf Description: TVS DIODE 3.3VWM 6.8VC PGTSSLP21
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 14pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSSLP-2-1
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 6.8V (Typ)
Power Line Protection: No
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ESD206B102ELSE6327XTSA1 ESD206B102ELSE6327XTSA1 Infineon Technologies ESD206-B1-02.pdf Description: TVS DIODE 5.5VWM 9.6VC TSSLP-2-3
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-TSSLP-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.1V
Voltage - Clamping (Max) @ Ipp: 9.6V (Typ)
Power Line Protection: No
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PXE1410CDMG003XTMA1 PXE1410CDMG003XTMA1 Infineon Technologies 448_PXE1410CDMG003XTMA1-1-20.pdf Description: IC CTLR PRIMARION 40VQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: PG-VQFN-40-13
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PXE1410CDMG003XTMA1 PXE1410CDMG003XTMA1 Infineon Technologies 448_PXE1410CDMG003XTMA1-1-20.pdf Description: IC CTLR PRIMARION 40VQFN
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: PG-VQFN-40-13
на замовлення 4441 шт:
термін постачання 21-31 дні (днів)
1+392.33 грн
10+287.99 грн
25+265.61 грн
100+226.14 грн
250+215.12 грн
500+208.48 грн
1000+199.68 грн
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ETD630N18P60HPSA1 ETD630N18P60HPSA1 Infineon Technologies Infineon-ETT630N18P60-DataSheet-v03_01-EN.pdf?fileId=5546d46278d64ffd017931ecaa3c3c8f Description: 60 MM THYRISTOR/DIODE MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16800A, 20000A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 628 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.8 kV
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
2+18194.20 грн
Мінімальне замовлення: 2
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BBY 56-02W E6327 BBY 56-02W E6327 Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE TUNING 10V 20MA SCD-80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 12.1pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C3
Supplier Device Package: SCD-80
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 3.3
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BSM10GP120BOSA1 Infineon Technologies Description: IGBT MOD 1200V 20A 100W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 10A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 100 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 600 pF @ 25 V
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IM66D130AXTMA1 IM66D130AXTMA1 Infineon Technologies Infineon-IM66D130A-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c63d5f38c3a41 Description: MEMS GROWTH
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -36dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 66dB
Termination: Solder Pads
Direction: Omnidirectional
Port Location: Bottom
Height (Max): 0.039" (0.99mm)
Voltage - Rated: 1.8 V
Current - Supply: 1.4 mA
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 10 Hz ~ 10 kHz
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IM66D130AXTMA1 IM66D130AXTMA1 Infineon Technologies Infineon-IM66D130A-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c63d5f38c3a41 Description: MEMS GROWTH
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -36dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 66dB
Termination: Solder Pads
Direction: Omnidirectional
Port Location: Bottom
Height (Max): 0.039" (0.99mm)
Voltage - Rated: 1.8 V
Current - Supply: 1.4 mA
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 10 Hz ~ 10 kHz
на замовлення 248 шт:
термін постачання 21-31 дні (днів)
2+167.92 грн
10+144.91 грн
25+136.71 грн
100+109.31 грн
Мінімальне замовлення: 2
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CG7742AAT Infineon Technologies Description: IC
Packaging: Bulk
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CG7772AA Infineon Technologies Description: IC
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Single Port, Synchronous, ZBT
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 2M x 36
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CG8741AAT Infineon Technologies Description: INFINEON
Packaging: Bulk
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CG8941ATT Infineon Technologies Description: IC
Packaging: Bulk
DigiKey Programmable: Not Verified
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TDB6HK180N22RRPB11BPSA1 Infineon Technologies Infineon-TDB6HK180N22RRP_B11-DataSheet-v00_20-EN.pdf?fileId=8ac78c8c7ba0a117017ba1ea2b8e039d Description: LOW POWER ECONO AG-ECONO2B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Current - Gate Trigger (Igt) (Max): 70 mA
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - Off State: 2.2 kV
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PTF180101S V1 Infineon Technologies ptf180101s_ds2a.pdf Description: RF MOSFET LDMOS 28V H-32259-2
Packaging: Tape & Reel (TR)
Package / Case: H-32259-2
Current Rating (Amps): 1µA
Mounting Type: Surface Mount
Frequency: 1.99GHz
Power - Output: 10W
Gain: 19dB
Technology: LDMOS
Supplier Device Package: H-32259-2
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 180 mA
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IPB100N10S305ATMA2 IPB100N10S305ATMA2 Infineon Technologies Infineon-IPP_B_I100N10S3-DataSheet-v01_01-EN.pdf?fileId=db3a30431a5c32f2011a908bd4d8595c Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
Qualification: AEC-Q101
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IPP100N10S305AKSA2 IPP100N10S305AKSA2 Infineon Technologies Infineon-IPP_B_I100N10S3-DataSheet-v01_01-EN.pdf?fileId=db3a30431a5c32f2011a908bd4d8595c Description: MOSFET_(75V 120V(
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
Qualification: AEC-Q101
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PXE1331CDNG003XTMA1 Infineon Technologies Description: IC CONTROLLER
Packaging: Tape & Reel (TR)
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PXE1331CDNG003XTMA1 Infineon Technologies Description: IC CONTROLLER
Packaging: Cut Tape (CT)
на замовлення 3950 шт:
термін постачання 21-31 дні (днів)
1+424.96 грн
10+367.61 грн
25+347.52 грн
100+282.65 грн
250+268.16 грн
500+240.62 грн
1000+199.60 грн
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FF225R17ME4B11BOSA1 FF225R17ME4B11BOSA1 Infineon Technologies Infineon-FF225R17ME4_B11-DS-v02_01-en_de.pdf?fileId=db3a30432fbc32ee012fbf631bc73a55 Description: IGBT MOD 1700V 340A 1500W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 340 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1500 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
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FF900R17ME7PB11BPSA1 Infineon Technologies Description: MEDIUM POWER ECONO
Packaging: Tray
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FS225R17OE4PBOSA1 FS225R17OE4PBOSA1 Infineon Technologies Description: IGBT MODULE MED PWR ECONOPP-2
Packaging: Bulk
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
1+35571.90 грн
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FS225R17OE4PBOSA1 FS225R17OE4PBOSA1 Infineon Technologies Description: IGBT MODULE MED PWR ECONOPP-2
Packaging: Tray
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FT150R12KE3B5BOSA1 Infineon Technologies Description: IGBT MODULE POWER
Packaging: Bulk
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FZ1200R16KF4S1NOSA1 Infineon Technologies INFNS14535-1.pdf?t.download=true&u=5oefqw Description: FZ1200R16 - INSULATED GATE BIPOL
Packaging: Bulk
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+98623.90 грн
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FZ1200R17KF6CB2NOSA1 Infineon Technologies FZ1200R17KF6C_B2_Rev2.1_2013-11-25.pdf Description: IGBT MODULE 1700V 1200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1.2kA
NTC Thermistor: No
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 9600 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 79 nF @ 25 V
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FZ1600R12KL4CNOSA1 Infineon Technologies FZ1600R12KL4C_Rev3.1_2013-10-02.pdf Description: IGBT MODULE 1200V 1600A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 1.6kA
NTC Thermistor: No
Current - Collector (Ic) (Max): 2450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 10000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 110 nF @ 25 V
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GATELEAD14231XPSA1 GATELEAD14231XPSA1 Infineon Technologies Description: ACCY GATE LEAD
Packaging: Tray
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+1910.74 грн
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GATELEAD14232XPSA1 GATELEAD14232XPSA1 Infineon Technologies Description: ACCY GATE LEAD
Packaging: Tray
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+1910.74 грн
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IPB096N03LGATMA1 IPB096N03LGATMA1 Infineon Technologies IP%28B%2CP%29096N03L_G.pdf Description: MOSFET N-CH 30V 35A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 30A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
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IPP65R110CFDAAKSA1 IPP65R110CFDAAKSA1 Infineon Technologies Infineon-IPX65R110CFDA-DS-v02_00-en.pdf?fileId=db3a304336797ff90136ba7c820925a5 Description: MOSFET N-CH 650V 31.2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Power Dissipation (Max): 277.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Supplier Device Package: PG-TO220-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
Qualification: AEC-Q101
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IPA65R110CFDXKSA2 IPA65R110CFDXKSA2 Infineon Technologies DS_IPX65R110CFD_2_61.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30433004641301306abd8e2041b1 Description: MOSFET N-CH 650V 31.2A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Power Dissipation (Max): 34.7W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
на замовлення 530 шт:
термін постачання 21-31 дні (днів)
1+471.92 грн
50+241.58 грн
100+221.02 грн
500+175.20 грн
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ND104N18KHPSA1 Infineon Technologies INFNS29282-1.pdf?t.download=true&u=5oefqw Description: DIODE GEN PURP 1.8KV 104A PB20-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 104A
Supplier Device Package: BG-PB20-1
Operating Temperature - Junction: -40°C ~ 135°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Current - Reverse Leakage @ Vr: 20 mA @ 1800 V
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CY7C1372KV33-167AXI CY7C1372KV33-167AXI Infineon Technologies Infineon-CY7C1370KV33_CY7C1370KVE33_CY7C1372KV33_CY7C1372KVE33_18-Mbit_(512_K_36_1_M_18)_Pipelined_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed63ffb5691&utm_source=cypress&utm_ Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
на замовлення 548 шт:
термін постачання 21-31 дні (днів)
1+2519.53 грн
10+2243.75 грн
25+2171.76 грн
72+1961.18 грн
144+1911.69 грн
288+1863.09 грн
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CY7C1350G-133AXI CY7C1350G-133AXI Infineon Technologies Infineon-CY7C1350G_4-Mbit_(128_K_36)_Pipelined_SRAM_with_NoBL_Architecture-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec1032c35ab Description: IC SRAM 4.5MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 4 ns
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
на замовлення 343 шт:
термін постачання 21-31 дні (днів)
2+166.32 грн
Мінімальне замовлення: 2
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CY7C1350G-133AXI CY7C1350G-133AXI Infineon Technologies Infineon-CY7C1350G_4-Mbit_(128_K_36)_Pipelined_SRAM_with_NoBL_Architecture-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec1032c35ab Description: IC SRAM 4.5MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 4 ns
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
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CY7C1356C-200AXI CY7C1356C-200AXI Infineon Technologies Infineon-CY7C1354C_CY7C1356C_9_MBIT_(256K_X_36_512K_X_18)_PIPELINED_SRAM_WITH_NOBL_ARCHITECTURE-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec11af735c5 Description: IC SRAM 9MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.2 ns
Memory Organization: 512K x 18
DigiKey Programmable: Not Verified
на замовлення 144 шт:
термін постачання 21-31 дні (днів)
1+735.33 грн
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CY7C1354CV25-166AXC CY7C1354CV25-166AXC Infineon Technologies download Description: IC SRAM 9MBIT PARALLEL 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 166 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
на замовлення 306 шт:
термін постачання 21-31 дні (днів)
26+883.72 грн
Мінімальне замовлення: 26
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CY7C1371KV33-133AXC CY7C1371KV33-133AXC Infineon Technologies Infineon-CY7C1371KV33_CY7C1371KVE33_CY7C1373KV33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed99c465b40&utm_source=cypress&utm_medium=refe Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
на замовлення 144 шт:
термін постачання 21-31 дні (днів)
1+1832.75 грн
10+1632.52 грн
25+1580.21 грн
72+1467.70 грн
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CY7C1351G-100AXC CY7C1351G-100AXC Infineon Technologies Infineon-CY7C1351G_4-Mbit_(128_K_36)_Flow-through_SRAM_with_NoBL_Architecture-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0f16b359c Description: IC SRAM 4.5MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 8 ns
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
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CY7C1350G-200AXI CY7C1350G-200AXI Infineon Technologies Infineon-CY7C1350G_4-Mbit_(128_K_36)_Pipelined_SRAM_with_NoBL_Architecture-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec1032c35ab Description: IC SRAM 4.5MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 2.8 ns
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
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CY62147EV30LL-45B2XI CY62147EV30LL-45B2XI Infineon Technologies CY62147EV30_MoBL_RevT_6-26-20.pdf Description: IC SRAM 4MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
на замовлення 1729 шт:
термін постачання 21-31 дні (днів)
1+492.61 грн
10+441.18 грн
25+427.86 грн
40+395.10 грн
80+385.63 грн
230+371.32 грн
480+355.57 грн
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CY62137FV30LL-45ZSXA CY62137FV30LL-45ZSXA Infineon Technologies Infineon-CY62137FV30_MoBL_Automotive_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eccfd7a4737&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 2MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
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CY7C1370KV25-167AXC CY7C1370KV25-167AXC Infineon Technologies download Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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CY7C1370KV25-200BZC CY7C1370KV25-200BZC Infineon Technologies download Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
на замовлення 272 шт:
термін постачання 21-31 дні (днів)
1+842.76 грн
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CY7C1371KVE33-100AXI CY7C1371KVE33-100AXI Infineon Technologies Infineon-CY7C1371KV33_CY7C1371KVE33_CY7C1373KV33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed99c465b40&utm_source=cypress&utm_medium=refe Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 8.5 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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CY7C1370KV33-250AXC CY7C1370KV33-250AXC Infineon Technologies Infineon-CY7C1370KV33_CY7C1370KVE33_CY7C1372KV33_CY7C1372KVE33_18-Mbit_(512_K_36_1_M_18)_Pipelined_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed63ffb5691&utm_source=cypress&utm_ Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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IAUCN04S7L005ATMA1 IAUCN04S7L005ATMA1 Infineon Technologies Infineon-IAUCN04S7L005-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35ed07d31a6c Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 430A (Tj)
Rds On (Max) @ Id, Vgs: 0.52mOhm @ 88A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 95µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9415 pF @ 20 V
Qualification: AEC-Q101
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IAUCN04S7L005ATMA1 IAUCN04S7L005ATMA1 Infineon Technologies Infineon-IAUCN04S7L005-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35ed07d31a6c Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 430A (Tj)
Rds On (Max) @ Id, Vgs: 0.52mOhm @ 88A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 95µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9415 pF @ 20 V
Qualification: AEC-Q101
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IAUCN04S7L006ATMA1 IAUCN04S7L006ATMA1 Infineon Technologies Infineon-IAUCN04S7L006-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35ecfcd81a69 Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Qualification: AEC-Q101
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9021933
Виробник: Infineon Technologies
Description: INFINEON
Packaging: Bulk
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CY2548QIT download
CY2548QIT
Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Clock Generator
Input: LVCMOS
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 4
DigiKey Programmable: Not Verified
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DD600N16KHPSA3 Infineon-DD600N-DS-v03_02-EN.pdf?fileId=db3a304412b407950112b42fbcc44d54
DD600N16KHPSA3
Виробник: Infineon Technologies
Description: DIODE MODULE GP 1.6KV 600A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 600A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1800 A
Current - Reverse Leakage @ Vr: 40 mA @ 1600 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+22277.90 грн
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S6J32BAKSESE2000A Infineon-S6J3200_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v18_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ee0c1436670&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_int
Виробник: Infineon Technologies
Description: IC MCU 32B 2.112MB FLASH 208TQFP
Packaging: Tray
Package / Case: 208-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 2.112MB (2.112M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 50x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.15V ~ 5.5V
Connectivity: CANbus, CSIO, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 208-TQFP (28x28)
Number of I/O: 120
DigiKey Programmable: Not Verified
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CY8C4147AZSS598XQLA1 Infineon-CY8C4149AZS-S575-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c8929aa4d018a21719a00247e
CY8C4147AZSS598XQLA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, I2S, DMA, LCD, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 100-TQFP (14x14)
Grade: Automotive
Number of I/O: 84
Qualification: AEC-Q100
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ESD3V3U1U-02LS E6327 ESD3V3U1U.pdf
ESD3V3U1U-02LS E6327
Виробник: Infineon Technologies
Description: TVS DIODE 3.3VWM 28VC PGTSSLP21
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1GHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSSLP-2-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 28V (Typ)
Power Line Protection: No
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ESD3V3U1U-02LS E6327 ESD3V3U1U.pdf
ESD3V3U1U-02LS E6327
Виробник: Infineon Technologies
Description: TVS DIODE 3.3VWM 28VC PGTSSLP21
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1GHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSSLP-2-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 28V (Typ)
Power Line Protection: No
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ESD5V0H1U-02LS E6327 ESD5V0H1U-02LS.pdf
ESD5V0H1U-02LS E6327
Виробник: Infineon Technologies
Description: TVS DIODE 5VWM 40VC PGTSSLP21
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.27pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: PG-TSSLP-2-1
Unidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 40V (Typ)
Power Line Protection: No
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ESD24VL1B-02LS E6327 ESD24VL1B+Series_rev_1_1ESD_Transient_Protection_Diode_Infineon.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433899edae01389eb4ba7d508e
ESD24VL1B-02LS E6327
Виробник: Infineon Technologies
Description: TVS DIODE 24VWM 55VC TSSLP-2-1
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 2.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: PG-TSSLP-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.3V
Voltage - Clamping (Max) @ Ipp: 55V (Typ)
Power Line Protection: No
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ESD3V3S1B02LSE6327XTSA1 ESD3V3S1B.pdf
ESD3V3S1B02LSE6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 3.3VWM 6.8VC PGTSSLP21
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 14pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSSLP-2-1
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 6.8V (Typ)
Power Line Protection: No
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ESD3V3S1B02LSE6327XTSA1 ESD3V3S1B.pdf
ESD3V3S1B02LSE6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 3.3VWM 6.8VC PGTSSLP21
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 14pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSSLP-2-1
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 6.8V (Typ)
Power Line Protection: No
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ESD206B102ELSE6327XTSA1 ESD206-B1-02.pdf
ESD206B102ELSE6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 5.5VWM 9.6VC TSSLP-2-3
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-TSSLP-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.1V
Voltage - Clamping (Max) @ Ipp: 9.6V (Typ)
Power Line Protection: No
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PXE1410CDMG003XTMA1 448_PXE1410CDMG003XTMA1-1-20.pdf
PXE1410CDMG003XTMA1
Виробник: Infineon Technologies
Description: IC CTLR PRIMARION 40VQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: PG-VQFN-40-13
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PXE1410CDMG003XTMA1 448_PXE1410CDMG003XTMA1-1-20.pdf
PXE1410CDMG003XTMA1
Виробник: Infineon Technologies
Description: IC CTLR PRIMARION 40VQFN
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: PG-VQFN-40-13
на замовлення 4441 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+392.33 грн
10+287.99 грн
25+265.61 грн
100+226.14 грн
250+215.12 грн
500+208.48 грн
1000+199.68 грн
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ETD630N18P60HPSA1 Infineon-ETT630N18P60-DataSheet-v03_01-EN.pdf?fileId=5546d46278d64ffd017931ecaa3c3c8f
ETD630N18P60HPSA1
Виробник: Infineon Technologies
Description: 60 MM THYRISTOR/DIODE MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16800A, 20000A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 628 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.8 kV
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+18194.20 грн
Мінімальне замовлення: 2
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BBY 56-02W E6327 fundamentals-of-power-semiconductors
BBY 56-02W E6327
Виробник: Infineon Technologies
Description: DIODE TUNING 10V 20MA SCD-80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 12.1pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C3
Supplier Device Package: SCD-80
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 3.3
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BSM10GP120BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 20A 100W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 10A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 100 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 600 pF @ 25 V
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IM66D130AXTMA1 Infineon-IM66D130A-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c63d5f38c3a41
IM66D130AXTMA1
Виробник: Infineon Technologies
Description: MEMS GROWTH
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -36dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 66dB
Termination: Solder Pads
Direction: Omnidirectional
Port Location: Bottom
Height (Max): 0.039" (0.99mm)
Voltage - Rated: 1.8 V
Current - Supply: 1.4 mA
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 10 Hz ~ 10 kHz
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IM66D130AXTMA1 Infineon-IM66D130A-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c63d5f38c3a41
IM66D130AXTMA1
Виробник: Infineon Technologies
Description: MEMS GROWTH
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -36dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 66dB
Termination: Solder Pads
Direction: Omnidirectional
Port Location: Bottom
Height (Max): 0.039" (0.99mm)
Voltage - Rated: 1.8 V
Current - Supply: 1.4 mA
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 10 Hz ~ 10 kHz
на замовлення 248 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+167.92 грн
10+144.91 грн
25+136.71 грн
100+109.31 грн
Мінімальне замовлення: 2
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CG7742AAT
Виробник: Infineon Technologies
Description: IC
Packaging: Bulk
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CG7772AA
Виробник: Infineon Technologies
Description: IC
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Single Port, Synchronous, ZBT
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 2M x 36
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CG8741AAT
Виробник: Infineon Technologies
Description: INFINEON
Packaging: Bulk
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CG8941ATT
Виробник: Infineon Technologies
Description: IC
Packaging: Bulk
DigiKey Programmable: Not Verified
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TDB6HK180N22RRPB11BPSA1 Infineon-TDB6HK180N22RRP_B11-DataSheet-v00_20-EN.pdf?fileId=8ac78c8c7ba0a117017ba1ea2b8e039d
Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Current - Gate Trigger (Igt) (Max): 70 mA
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - Off State: 2.2 kV
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PTF180101S V1 ptf180101s_ds2a.pdf
Виробник: Infineon Technologies
Description: RF MOSFET LDMOS 28V H-32259-2
Packaging: Tape & Reel (TR)
Package / Case: H-32259-2
Current Rating (Amps): 1µA
Mounting Type: Surface Mount
Frequency: 1.99GHz
Power - Output: 10W
Gain: 19dB
Technology: LDMOS
Supplier Device Package: H-32259-2
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 180 mA
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IPB100N10S305ATMA2 Infineon-IPP_B_I100N10S3-DataSheet-v01_01-EN.pdf?fileId=db3a30431a5c32f2011a908bd4d8595c
IPB100N10S305ATMA2
Виробник: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
Qualification: AEC-Q101
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IPP100N10S305AKSA2 Infineon-IPP_B_I100N10S3-DataSheet-v01_01-EN.pdf?fileId=db3a30431a5c32f2011a908bd4d8595c
IPP100N10S305AKSA2
Виробник: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
Qualification: AEC-Q101
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PXE1331CDNG003XTMA1
Виробник: Infineon Technologies
Description: IC CONTROLLER
Packaging: Tape & Reel (TR)
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PXE1331CDNG003XTMA1
Виробник: Infineon Technologies
Description: IC CONTROLLER
Packaging: Cut Tape (CT)
на замовлення 3950 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+424.96 грн
10+367.61 грн
25+347.52 грн
100+282.65 грн
250+268.16 грн
500+240.62 грн
1000+199.60 грн
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FF225R17ME4B11BOSA1 Infineon-FF225R17ME4_B11-DS-v02_01-en_de.pdf?fileId=db3a30432fbc32ee012fbf631bc73a55
FF225R17ME4B11BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 340A 1500W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 340 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1500 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
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FF900R17ME7PB11BPSA1
Виробник: Infineon Technologies
Description: MEDIUM POWER ECONO
Packaging: Tray
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FS225R17OE4PBOSA1
FS225R17OE4PBOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE MED PWR ECONOPP-2
Packaging: Bulk
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+35571.90 грн
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FS225R17OE4PBOSA1
FS225R17OE4PBOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE MED PWR ECONOPP-2
Packaging: Tray
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FT150R12KE3B5BOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE POWER
Packaging: Bulk
товару немає в наявності
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FZ1200R16KF4S1NOSA1 INFNS14535-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: FZ1200R16 - INSULATED GATE BIPOL
Packaging: Bulk
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+98623.90 грн
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FZ1200R17KF6CB2NOSA1 FZ1200R17KF6C_B2_Rev2.1_2013-11-25.pdf
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 1200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1.2kA
NTC Thermistor: No
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 9600 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 79 nF @ 25 V
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FZ1600R12KL4CNOSA1 FZ1600R12KL4C_Rev3.1_2013-10-02.pdf
Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 1600A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 1.6kA
NTC Thermistor: No
Current - Collector (Ic) (Max): 2450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 10000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 110 nF @ 25 V
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GATELEAD14231XPSA1
GATELEAD14231XPSA1
Виробник: Infineon Technologies
Description: ACCY GATE LEAD
Packaging: Tray
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1910.74 грн
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GATELEAD14232XPSA1
GATELEAD14232XPSA1
Виробник: Infineon Technologies
Description: ACCY GATE LEAD
Packaging: Tray
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1910.74 грн
В кошику  од. на суму  грн.
IPB096N03LGATMA1 IP%28B%2CP%29096N03L_G.pdf
IPB096N03LGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 35A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 30A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
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IPP65R110CFDAAKSA1 Infineon-IPX65R110CFDA-DS-v02_00-en.pdf?fileId=db3a304336797ff90136ba7c820925a5
IPP65R110CFDAAKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 31.2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Power Dissipation (Max): 277.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Supplier Device Package: PG-TO220-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
Qualification: AEC-Q101
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IPA65R110CFDXKSA2 DS_IPX65R110CFD_2_61.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30433004641301306abd8e2041b1
IPA65R110CFDXKSA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 31.2A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Power Dissipation (Max): 34.7W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
на замовлення 530 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+471.92 грн
50+241.58 грн
100+221.02 грн
500+175.20 грн
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ND104N18KHPSA1 INFNS29282-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: DIODE GEN PURP 1.8KV 104A PB20-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 104A
Supplier Device Package: BG-PB20-1
Operating Temperature - Junction: -40°C ~ 135°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Current - Reverse Leakage @ Vr: 20 mA @ 1800 V
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CY7C1372KV33-167AXI Infineon-CY7C1370KV33_CY7C1370KVE33_CY7C1372KV33_CY7C1372KVE33_18-Mbit_(512_K_36_1_M_18)_Pipelined_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed63ffb5691&utm_source=cypress&utm_
CY7C1372KV33-167AXI
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
на замовлення 548 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2519.53 грн
10+2243.75 грн
25+2171.76 грн
72+1961.18 грн
144+1911.69 грн
288+1863.09 грн
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CY7C1350G-133AXI Infineon-CY7C1350G_4-Mbit_(128_K_36)_Pipelined_SRAM_with_NoBL_Architecture-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec1032c35ab
CY7C1350G-133AXI
Виробник: Infineon Technologies
Description: IC SRAM 4.5MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 4 ns
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
на замовлення 343 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+166.32 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY7C1350G-133AXI Infineon-CY7C1350G_4-Mbit_(128_K_36)_Pipelined_SRAM_with_NoBL_Architecture-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec1032c35ab
CY7C1350G-133AXI
Виробник: Infineon Technologies
Description: IC SRAM 4.5MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 4 ns
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
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CY7C1356C-200AXI Infineon-CY7C1354C_CY7C1356C_9_MBIT_(256K_X_36_512K_X_18)_PIPELINED_SRAM_WITH_NOBL_ARCHITECTURE-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec11af735c5
CY7C1356C-200AXI
Виробник: Infineon Technologies
Description: IC SRAM 9MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.2 ns
Memory Organization: 512K x 18
DigiKey Programmable: Not Verified
на замовлення 144 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+735.33 грн
10+681.66 грн
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CY7C1354CV25-166AXC download
CY7C1354CV25-166AXC
Виробник: Infineon Technologies
Description: IC SRAM 9MBIT PARALLEL 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 166 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
на замовлення 306 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
26+883.72 грн
Мінімальне замовлення: 26
В кошику  од. на суму  грн.
CY7C1371KV33-133AXC Infineon-CY7C1371KV33_CY7C1371KVE33_CY7C1373KV33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed99c465b40&utm_source=cypress&utm_medium=refe
CY7C1371KV33-133AXC
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
на замовлення 144 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1832.75 грн
10+1632.52 грн
25+1580.21 грн
72+1467.70 грн
В кошику  од. на суму  грн.
CY7C1351G-100AXC Infineon-CY7C1351G_4-Mbit_(128_K_36)_Flow-through_SRAM_with_NoBL_Architecture-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0f16b359c
CY7C1351G-100AXC
Виробник: Infineon Technologies
Description: IC SRAM 4.5MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 8 ns
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
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CY7C1350G-200AXI Infineon-CY7C1350G_4-Mbit_(128_K_36)_Pipelined_SRAM_with_NoBL_Architecture-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec1032c35ab
CY7C1350G-200AXI
Виробник: Infineon Technologies
Description: IC SRAM 4.5MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 2.8 ns
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
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CY62147EV30LL-45B2XI CY62147EV30_MoBL_RevT_6-26-20.pdf
CY62147EV30LL-45B2XI
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
на замовлення 1729 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+492.61 грн
10+441.18 грн
25+427.86 грн
40+395.10 грн
80+385.63 грн
230+371.32 грн
480+355.57 грн
960+346.60 грн
В кошику  од. на суму  грн.
CY62137FV30LL-45ZSXA Infineon-CY62137FV30_MoBL_Automotive_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eccfd7a4737&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62137FV30LL-45ZSXA
Виробник: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
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CY7C1370KV25-167AXC download
CY7C1370KV25-167AXC
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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CY7C1370KV25-200BZC download
CY7C1370KV25-200BZC
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
на замовлення 272 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+842.76 грн
В кошику  од. на суму  грн.
CY7C1371KVE33-100AXI Infineon-CY7C1371KV33_CY7C1371KVE33_CY7C1373KV33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed99c465b40&utm_source=cypress&utm_medium=refe
CY7C1371KVE33-100AXI
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 8.5 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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CY7C1370KV33-250AXC Infineon-CY7C1370KV33_CY7C1370KVE33_CY7C1372KV33_CY7C1372KVE33_18-Mbit_(512_K_36_1_M_18)_Pipelined_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed63ffb5691&utm_source=cypress&utm_
CY7C1370KV33-250AXC
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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IAUCN04S7L005ATMA1 Infineon-IAUCN04S7L005-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35ed07d31a6c
IAUCN04S7L005ATMA1
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 430A (Tj)
Rds On (Max) @ Id, Vgs: 0.52mOhm @ 88A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 95µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9415 pF @ 20 V
Qualification: AEC-Q101
товару немає в наявності
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IAUCN04S7L005ATMA1 Infineon-IAUCN04S7L005-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35ed07d31a6c
IAUCN04S7L005ATMA1
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 430A (Tj)
Rds On (Max) @ Id, Vgs: 0.52mOhm @ 88A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 95µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9415 pF @ 20 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IAUCN04S7L006ATMA1 Infineon-IAUCN04S7L006-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35ecfcd81a69
IAUCN04S7L006ATMA1
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
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