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CY62157EV30LL-45ZXIT CY62157EV30LL-45ZXIT Infineon Technologies Infineon-CY62157EV30_MoBL_8-Mbit_(512_K_16)_Static_RAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe669131ef&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_4_0 Description: IC SRAM 8MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
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CY62157EV30LL-45ZXIT CY62157EV30LL-45ZXIT Infineon Technologies Infineon-CY62157EV30_MoBL_8-Mbit_(512_K_16)_Static_RAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe669131ef&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_4_0 Description: IC SRAM 8MBIT PARALLEL 48TSOP I
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
на замовлення 415 шт:
термін постачання 21-31 дні (днів)
1+974.15 грн
10+870.80 грн
25+843.67 грн
50+772.60 грн
100+753.60 грн
250+728.81 грн
В кошику  од. на суму  грн.
CY7C1021CV33-10ZSXA CY7C1021CV33-10ZSXA Infineon Technologies Infineon-CY7C1021CV33_Automotive_1-Mbit_(64_K_16)_Static_RAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd0e5e2f13&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 1MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
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CY7C1019D-10ZSXIT CY7C1019D-10ZSXIT Infineon Technologies Infineon-CY7C1019D_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf2577333a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 1MBIT PARALLEL 32TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
150+301.34 грн
Мінімальне замовлення: 150
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CY7C1019D-10ZSXIT CY7C1019D-10ZSXIT Infineon Technologies Infineon-CY7C1019D_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf2577333a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 1MBIT PARALLEL 32TSOP II
Packaging: Bulk
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 3178 шт:
термін постачання 21-31 дні (днів)
71+308.64 грн
Мінімальне замовлення: 71
В кошику  од. на суму  грн.
CY7C1019D-10VXIT CY7C1019D-10VXIT Infineon Technologies Infineon-CY7C1019D_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf2577333a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Tape & Reel (TR)
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 2246 шт:
термін постачання 21-31 дні (днів)
750+299.06 грн
1500+277.76 грн
Мінімальне замовлення: 750
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CY7C1019D-10VXIT CY7C1019D-10VXIT Infineon Technologies Infineon-CY7C1019D_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf2577333a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Cut Tape (CT)
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 3742 шт:
термін постачання 21-31 дні (днів)
1+421.53 грн
10+360.34 грн
25+343.66 грн
50+311.12 грн
100+300.13 грн
250+286.16 грн
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IRF1405ZSTRLPBF IRF1405ZSTRLPBF Infineon Technologies IRF1405Z%28S%2CL%29PbF.pdf Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
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IRF1405ZSTRLPBF IRF1405ZSTRLPBF Infineon Technologies IRF1405Z%28S%2CL%29PbF.pdf Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
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CY8C29466-24SXIT CY8C29466-24SXIT Infineon Technologies Infineon-CY8C29466_CY8C29566_CY8C29666_CY8C29866_PSoC_Programmable_System-on-Chip-DataSheet-v31_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec690c03ce1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integra Description: IC MCU 8BIT 32KB FLASH 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 12x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-SOIC
Number of I/O: 24
DigiKey Programmable: Verified
на замовлення 5998 шт:
термін постачання 21-31 дні (днів)
1+1190.80 грн
10+908.59 грн
25+849.03 грн
100+735.35 грн
250+706.08 грн
500+688.44 грн
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DEMOBOARDTLD1125ELTOBO1 DEMOBOARDTLD1125ELTOBO1 Infineon Technologies Description: DEMOBOARD TLD1125EL
Packaging: Bulk
Voltage - Output: 40V
Voltage - Input: 5.5V ~ 40V
Current - Output / Channel: 180mA
Utilized IC / Part: TLD1125EL
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+9867.10 грн
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CY8CTMA1036AA-13T CY8CTMA1036AA-13T Infineon Technologies Description: PSOC BASED - TRUETOUCH
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 5.5V, 2.6V ~ 5.5V
Resolution (Bits): 32 b
Supplier Device Package: 100-TQFP (14x14)
Voltage Reference: Internal
Touchscreen: 2 Wire Capacitive
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CY8CTMA1036AA-13 CY8CTMA1036AA-13 Infineon Technologies Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 5.5V, 2.6V ~ 5.5V
Resolution (Bits): 32 b
Supplier Device Package: 100-TQFP (14x14)
Voltage Reference: Internal
Touchscreen: 2 Wire Capacitive
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CY3290-TMA1036A Infineon Technologies Description: DEVELOPMENT KIT
Packaging: Bulk
Function: Touch Screen Controller
Type: Interface
Contents: Board(s)
Utilized IC / Part: TMA1036A
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CY8CTMA1036AA-33 Infineon Technologies Description: IC SCREEN CTRLR TRUETOUCH 100QFP
Packaging: Tray
DigiKey Programmable: Not Verified
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S25FL128SAGMFV013 S25FL128SAGMFV013 Infineon Technologies Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Verified
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DEMOBOARDTLD1313ELTOBO1 Infineon Technologies Description: DEMOBOARD TLD1313EL
Packaging: Bulk
Voltage - Output: 40V
Voltage - Input: 5.5V ~ 40V
Current - Output / Channel: 120mA
Utilized IC / Part: TLD1313EL
Supplied Contents: Board(s)
Outputs and Type: 3 Non-Isolated Outputs
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+9867.10 грн
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D1821SH45TPRXPSA1 D1821SH45TPRXPSA1 Infineon Technologies D1821SH.pdf Description: DIODE STANDARD 4500V 2210A
Packaging: Tray
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2210A
Operating Temperature - Junction: 0°C ~ 140°C
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 2500 A
Current - Reverse Leakage @ Vr: 150 mA @ 4500 V
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LWLR10LR87L3000HPSA1 LWLR10LR87L3000HPSA1 Infineon Technologies Infineon-LIGHT%20FIBER%20LWL%20R10-LR87-DS-v02_01-EN.pdf?fileId=5546d462525dbac401532cafdddc74d1 Description: FIBER OPTIC CBL 3M
Packaging: Tray
Cable Diameter: 0.11" (2.8mm), 0.12" (3.0mm)
Length - Overall: 9.8' (3.0m)
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IFS100V12PT4BOSA1 Infineon Technologies IFS100V12PT4.pdf Description: IGBT MODULE 1200V 100A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 65°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
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CYW15G0403DXB-BGI CYW15G0403DXB-BGI Infineon Technologies Description: IC TELECOM INTERFACE 256BGA
Packaging: Tray
Package / Case: 256-BGA Exposed Pad
Mounting Type: Surface Mount
Voltage - Supply: 3.135V ~ 3.465V
Supplier Device Package: 256-L2BGA (27x27)
Number of Circuits: 4
на замовлення 1210 шт:
термін постачання 21-31 дні (днів)
4+6201.87 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
EVALBGA123N6TOBO1 EVALBGA123N6TOBO1 Infineon Technologies Infineon-BGA123N6-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c7f2a768a017f975b343074f4 Description: EVAL BGA123N6
Packaging: Bulk
For Use With/Related Products: BGA123N6
Frequency: 1.55GHz ~ 1.615GHz
Type: Amplifier
Supplied Contents: Board(s)
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
1+10988.04 грн
В кошику  од. на суму  грн.
EVALBGA125N6TOBO1 EVALBGA125N6TOBO1 Infineon Technologies Infineon-BGA125N6-DataSheet-v02_05-EN.pdf?fileId=8ac78c8c7f2a768a017f975b483c74f7 Description: EVAL BGA125N6
Packaging: Bulk
For Use With/Related Products: BGA125N6
Frequency: 1.164GHz ~ 1.3GHz
Type: Amplifier
Supplied Contents: Board(s)
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+10988.04 грн
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IR3622MTRPBF IR3622MTRPBF Infineon Technologies IR3622MPbF.pdf Description: IC REG CTRLR BUCK 32MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 600kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 7.5V ~ 14.5V
Supplier Device Package: 32-MLPQ (5x5)
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Frequency Control, Power Good, Sequencing, Soft Start, Tracking
Output Phases: 2
Duty Cycle (Max): 84%
Clock Sync: Yes
Number of Outputs: 2
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IR3622MTRPBF IR3622MTRPBF Infineon Technologies IR3622MPbF.pdf Description: IC REG CTRLR BUCK 32MLPQ
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 600kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 7.5V ~ 14.5V
Supplier Device Package: 32-MLPQ (5x5)
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Frequency Control, Power Good, Sequencing, Soft Start, Tracking
Output Phases: 2
Duty Cycle (Max): 84%
Clock Sync: Yes
Number of Outputs: 2
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IR3622MTRPBF IR3622MTRPBF Infineon Technologies IR3622MPbF.pdf Description: IC REG CTRLR BUCK 32MLPQ
Packaging: Bulk
Package / Case: 32-VFQFN Exposed Pad
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 600kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 7.5V ~ 14.5V
Supplier Device Package: 32-MLPQ (5x5)
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Frequency Control, Power Good, Sequencing, Soft Start, Tracking
Output Phases: 2
Duty Cycle (Max): 84%
Clock Sync: Yes
Number of Outputs: 2
на замовлення 3457 шт:
термін постачання 21-31 дні (днів)
154+147.28 грн
Мінімальне замовлення: 154
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CY2DL814ZXI CY2DL814ZXI Infineon Technologies cy2dl814_8.pdf Description: IC CLK BUFFER 1:4 400MHZ 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVDS
Type: Fanout Buffer (Distribution)
Input: LVDS, LVPECL, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:4
Differential - Input:Output: Yes/Yes
Supplier Device Package: 16-TSSOP
Frequency - Max: 400 MHz
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BC857SH6827XTSA1 BC857SH6827XTSA1 Infineon Technologies bc856s_bc856u_bc857s.pdf?folderId=db3a304314dca389011541d30fa21656&fileId=db3a304314dca38901154200fdcd16ef Description: TRANS 2PNP 45V 0.1A PG-SOT363-PO
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT363-PO
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BC857SH6827XTSA1 BC857SH6827XTSA1 Infineon Technologies bc856s_bc856u_bc857s.pdf?folderId=db3a304314dca389011541d30fa21656&fileId=db3a304314dca38901154200fdcd16ef Description: TRANS 2PNP 45V 0.1A PG-SOT363-PO
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT363-PO
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
5887+3.76 грн
Мінімальне замовлення: 5887
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SPOC2DBBTS712204ESATOBO1 SPOC2DBBTS712204ESATOBO1 Infineon Technologies Description: SPOC-2 DB BTS71220-4ESA
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS71220-4ESA
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+5223.20 грн
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BTS71202EPADAUGHBRDTOBO1 BTS71202EPADAUGHBRDTOBO1 Infineon Technologies Infineon-BTS7120-2EPA-DataSheet-v01_10-EN.pdf?fileId=5546d462636cc8fb016421dc08d31138 Description: BTS7120-2EPA DAUGH BRD
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7120-2EPA
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T880N16TOFXPSA1 T880N16TOFXPSA1 Infineon Technologies Infineon-T880N-DS-v01_00-en_de.pdf?fileId=db3a304323b87bc20123ffb85bf75bf8 Description: SCR MODULE 1800V 1750A DO200AB
Packaging: Bulk
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 880 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 1750 A
Voltage - Off State: 1.8 kV
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
2+11890.36 грн
Мінімальне замовлення: 2
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FS225R12OE4BOSA1 FS225R12OE4BOSA1 Infineon Technologies Infineon-FS225R12OE4-DS-v03_01-en_de.pdf?fileId=db3a304336797ff90136ab5334d94ca0 Description: IGBT MOD 1200V 350A 1250W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 350 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
на замовлення 157 шт:
термін постачання 21-31 дні (днів)
2+17241.12 грн
Мінімальне замовлення: 2
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XMC7100-E272K4160AA XMC7100-E272K4160AA Infineon Technologies Infineon-XMC-7100-Datasheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8412f8d30184443160ae4415 Description: IC MCU 32BIT 4.06MB 272LFBGA
Packaging: Tray
Package / Case: 272-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 4.063MB (4.063M x 8)
RAM Size: 768K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
Data Converters: A/D 72x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, FIFO, I2C, IrDA, MMC/SD/SDIO, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 272-BGA (16x16)
Number of I/O: 207
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IPD60R650CEAUMA1 IPD60R650CEAUMA1 Infineon Technologies Infineon-IPA60R650CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c851db3d1f55 Description: CONSUMER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
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IPD60R650CEAUMA1 IPD60R650CEAUMA1 Infineon Technologies Infineon-IPA60R650CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c851db3d1f55 Description: CONSUMER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
на замовлення 1971 шт:
термін постачання 21-31 дні (днів)
5+75.36 грн
10+42.94 грн
100+32.18 грн
500+27.06 грн
1000+25.26 грн
Мінімальне замовлення: 5
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CY7C65620-56LFXCT CY7C65620-56LFXCT Infineon Technologies download Description: IC USB HUB CTRLR 2PORT 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Function: Hub Controller
Interface: USB
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.15V ~ 3.45V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 56-QFN (8x8)
DigiKey Programmable: Not Verified
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S29GL01GS11FHB020 S29GL01GS11FHB020 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Verified
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BB644E7904HTSA1 BB644E7904HTSA1 Infineon Technologies bb644_bb664series.pdf Description: DIODE VAR CAP 30V 20MA SOD-323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SOD323-3D
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 17.8
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IRS21531DPBF IRS21531DPBF Infineon Technologies IRSDS08244-1.pdf?t.download=true&u=5oefqw description Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.4V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 120ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 180mA, 260mA
DigiKey Programmable: Not Verified
на замовлення 6044 шт:
термін постачання 21-31 дні (днів)
143+144.93 грн
Мінімальне замовлення: 143
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DF23MR12W1M1PB11BPSA1 DF23MR12W1M1PB11BPSA1 Infineon Technologies Infineon-DF23MR12W1M1P_B11-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b7017153f0de295eb5 Description: MOSFET 2N-CH 1200V 25A AG-EASY1B
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 10mA
Supplier Device Package: AG-EASY1B-2
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
4+5954.01 грн
Мінімальне замовлення: 4
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FP15R12W1T7B3BOMA1 FP15R12W1T7B3BOMA1 Infineon Technologies Infineon-FP15R12W1T7_B3-DataSheet-v00_10-EN.pdf?fileId=5546d46270c4f93e0170f185a2eb72da Description: IGBT MODULE LOW POWER EASY
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: 175°C (TJ)
NTC Thermistor: No
Supplier Device Package: AG-EASY1B-2
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
на замовлення 24 шт:
термін постачання 21-31 дні (днів)
10+2429.25 грн
Мінімальне замовлення: 10
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FP15R12W1T7B11BOMA1 FP15R12W1T7B11BOMA1 Infineon Technologies Infineon-FP15R12W1T7_B11-DataSheet-v00_10-EN.pdf?fileId=5546d462700c0ae6017057c6ba956751 Description: IGBT MODULE LOW POWER EASY
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: 175°C (TJ)
NTC Thermistor: No
Supplier Device Package: AG-EASY1B-2
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
на замовлення 48 шт:
термін постачання 21-31 дні (днів)
9+2601.83 грн
Мінімальне замовлення: 9
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PTFA191001EV4R250XTMA1 PTFA191001EV4R250XTMA1 Infineon Technologies PTFA191001E_F.pdf Description: RF MOSFET LDMOS 30V H-36248-2
Packaging: Tape & Reel (TR)
Package / Case: 2-Flatpack, Fin Leads
Current Rating (Amps): 10µA
Mounting Type: Surface Mount
Frequency: 1.96GHz
Power - Output: 44dBm
Gain: 17dB
Technology: LDMOS
Supplier Device Package: H-36248-2
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 900 mA
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PTFA191001EV4XWSA1 PTFA191001EV4XWSA1 Infineon Technologies PTFA191001E_F.pdf Description: RF MOSFET LDMOS 30V H-36248-2
Packaging: Tray
Package / Case: 2-Flatpack, Fin Leads
Current Rating (Amps): 10µA
Mounting Type: Surface Mount
Frequency: 1.96GHz
Power - Output: 44dBm
Gain: 17dB
Technology: LDMOS
Supplier Device Package: H-36248-2
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 900 mA
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PTFA212001F/1 P4 PTFA212001F/1 P4 Infineon Technologies fundamentals-of-power-semiconductors Description: RF MOSFET LDMOS 30V H-37260-2
Packaging: Tray
Package / Case: 2-Flatpack, Fin Leads, Flanged
Current Rating (Amps): 10µA
Mounting Type: Surface Mount
Frequency: 2.14GHz
Power - Output: 50W
Gain: 15.8dB
Technology: LDMOS
Supplier Device Package: H-37260-2
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 1.6 A
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FZ2400R12HE4B9HOSA2 FZ2400R12HE4B9HOSA2 Infineon Technologies Infineon-FZ2400R12HE4_B9-DS-v02_04-EN.pdf?fileId=db3a30433e4143bd013e46d8f64f417d Description: IGBT MODULE 1200V 3560A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 2400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 3560 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 13500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
1+69565.00 грн
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IDB15E60ATMA1 IDB15E60ATMA1 Infineon Technologies Infineon-IDB15E60-DS-v02_04-en.pdf?fileId=db3a304412b407950112b438c7b86b98 Description: DIODE GP 600V 29.2A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 87 ns
Technology: Standard
Current - Average Rectified (Io): 29.2A
Supplier Device Package: PG-TO263-3-2
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
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IRL3705ZPBF IRL3705ZPBF Infineon Technologies irl3705zpbf.pdf?fileId=5546d462533600a40153565f3a192536 description Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
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IRFR3910TRLPBF IRFR3910TRLPBF Infineon Technologies irfr3910pbf.pdf?fileId=5546d462533600a401535631f05d20df Description: MOSFET N-CH 100V 16A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
на замовлення 364238 шт:
термін постачання 21-31 дні (днів)
480+43.48 грн
Мінімальне замовлення: 480
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IPF021N13NM6ATMA1 IPF021N13NM6ATMA1 Infineon Technologies IPF021N13NM6_Rev2.0_10-16-23.pdf Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
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IPF021N13NM6ATMA1 IPF021N13NM6ATMA1 Infineon Technologies IPF021N13NM6_Rev2.0_10-16-23.pdf Description: TRENCH >=100V
Packaging: Cut Tape (CT)
на замовлення 727 шт:
термін постачання 21-31 дні (днів)
1+500.03 грн
10+333.50 грн
100+260.56 грн
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ICE2PCS06GXUMA1 ICE2PCS06GXUMA1 Infineon Technologies ProductDatasheetICE2PCS06_v1.1+Mar2010.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a3043327f13e3013285ff4ecb2e77 Description: IC PFC CTRLR CCM 70KHZ 8DSO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 26V
Frequency - Switching: 58kHz ~ 70kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DSO-8
Current - Startup: 450 µA
на замовлення 81792 шт:
термін постачання 21-31 дні (днів)
376+55.21 грн
Мінімальне замовлення: 376
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AUIRL3705Z AUIRL3705Z Infineon Technologies auirl3705z.pdf?fileId=5546d462533600a4015355bac1911546 Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Qualification: AEC-Q101
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CY7C0853AV-100BBC CY7C0853AV-100BBC Infineon Technologies Description: IC SRAM 9MBIT PARALLEL 172FBGA
Packaging: Tray
Package / Case: 172-LBGA
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Technology: SRAM - Dual Port, Synchronous
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 172-FBGA (15x15)
Memory Interface: Parallel
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
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IPB60R210CFD7ATMA1 IPB60R210CFD7ATMA1 Infineon Technologies Infineon-IPB60R210CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb2a0bf0c1ac0 Description: MOSFET N-CH 600V 12A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
товару немає в наявності
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IPB60R210CFD7ATMA1 IPB60R210CFD7ATMA1 Infineon Technologies Infineon-IPB60R210CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb2a0bf0c1ac0 Description: MOSFET N-CH 600V 12A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
на замовлення 990 шт:
термін постачання 21-31 дні (днів)
2+248.05 грн
10+155.49 грн
100+108.07 грн
500+82.40 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
S25FL128SAGNFA003 S25FL128SAGNFA003 Infineon Technologies Infineon-S25FL128SS25FL256S_128_Mb_(16_MB)256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
S25FL128SAGNFA003 S25FL128SAGNFA003 Infineon Technologies Infineon-S25FL128SS25FL256S_128_Mb_(16_MB)256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
на замовлення 2384 шт:
термін постачання 21-31 дні (днів)
1+336.75 грн
10+288.38 грн
25+274.94 грн
50+248.91 грн
100+240.11 грн
250+228.95 грн
500+217.22 грн
1000+209.52 грн
В кошику  од. на суму  грн.
IRGS4B60KD1TRRP IRGS4B60KD1TRRP Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT NPT 600V 11A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 93 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
Supplier Device Package: D2PAK
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/100ns
Switching Energy: 73µJ (on), 47µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 12 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 63 W
товару немає в наявності
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CY62157EV30LL-45ZXIT Infineon-CY62157EV30_MoBL_8-Mbit_(512_K_16)_Static_RAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe669131ef&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_4_0
CY62157EV30LL-45ZXIT
Виробник: Infineon Technologies
Description: IC SRAM 8MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
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CY62157EV30LL-45ZXIT Infineon-CY62157EV30_MoBL_8-Mbit_(512_K_16)_Static_RAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe669131ef&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_4_0
CY62157EV30LL-45ZXIT
Виробник: Infineon Technologies
Description: IC SRAM 8MBIT PARALLEL 48TSOP I
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
на замовлення 415 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+974.15 грн
10+870.80 грн
25+843.67 грн
50+772.60 грн
100+753.60 грн
250+728.81 грн
В кошику  од. на суму  грн.
CY7C1021CV33-10ZSXA Infineon-CY7C1021CV33_Automotive_1-Mbit_(64_K_16)_Static_RAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd0e5e2f13&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1021CV33-10ZSXA
Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
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CY7C1019D-10ZSXIT Infineon-CY7C1019D_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf2577333a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1019D-10ZSXIT
Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
150+301.34 грн
Мінімальне замовлення: 150
В кошику  од. на суму  грн.
CY7C1019D-10ZSXIT Infineon-CY7C1019D_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf2577333a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1019D-10ZSXIT
Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32TSOP II
Packaging: Bulk
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 3178 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
71+308.64 грн
Мінімальне замовлення: 71
В кошику  од. на суму  грн.
CY7C1019D-10VXIT Infineon-CY7C1019D_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf2577333a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1019D-10VXIT
Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Tape & Reel (TR)
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 2246 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
750+299.06 грн
1500+277.76 грн
Мінімальне замовлення: 750
В кошику  од. на суму  грн.
CY7C1019D-10VXIT Infineon-CY7C1019D_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf2577333a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1019D-10VXIT
Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Cut Tape (CT)
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 3742 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+421.53 грн
10+360.34 грн
25+343.66 грн
50+311.12 грн
100+300.13 грн
250+286.16 грн
В кошику  од. на суму  грн.
IRF1405ZSTRLPBF IRF1405Z%28S%2CL%29PbF.pdf
IRF1405ZSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF1405ZSTRLPBF IRF1405Z%28S%2CL%29PbF.pdf
IRF1405ZSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
товару немає в наявності
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CY8C29466-24SXIT Infineon-CY8C29466_CY8C29566_CY8C29666_CY8C29866_PSoC_Programmable_System-on-Chip-DataSheet-v31_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec690c03ce1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integra
CY8C29466-24SXIT
Виробник: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 12x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-SOIC
Number of I/O: 24
DigiKey Programmable: Verified
на замовлення 5998 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1190.80 грн
10+908.59 грн
25+849.03 грн
100+735.35 грн
250+706.08 грн
500+688.44 грн
В кошику  од. на суму  грн.
DEMOBOARDTLD1125ELTOBO1
DEMOBOARDTLD1125ELTOBO1
Виробник: Infineon Technologies
Description: DEMOBOARD TLD1125EL
Packaging: Bulk
Voltage - Output: 40V
Voltage - Input: 5.5V ~ 40V
Current - Output / Channel: 180mA
Utilized IC / Part: TLD1125EL
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+9867.10 грн
В кошику  од. на суму  грн.
CY8CTMA1036AA-13T
CY8CTMA1036AA-13T
Виробник: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 5.5V, 2.6V ~ 5.5V
Resolution (Bits): 32 b
Supplier Device Package: 100-TQFP (14x14)
Voltage Reference: Internal
Touchscreen: 2 Wire Capacitive
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CY8CTMA1036AA-13
CY8CTMA1036AA-13
Виробник: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 5.5V, 2.6V ~ 5.5V
Resolution (Bits): 32 b
Supplier Device Package: 100-TQFP (14x14)
Voltage Reference: Internal
Touchscreen: 2 Wire Capacitive
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CY3290-TMA1036A
Виробник: Infineon Technologies
Description: DEVELOPMENT KIT
Packaging: Bulk
Function: Touch Screen Controller
Type: Interface
Contents: Board(s)
Utilized IC / Part: TMA1036A
товару немає в наявності
В кошику  од. на суму  грн.
CY8CTMA1036AA-33
Виробник: Infineon Technologies
Description: IC SCREEN CTRLR TRUETOUCH 100QFP
Packaging: Tray
DigiKey Programmable: Not Verified
товару немає в наявності
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S25FL128SAGMFV013 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SAGMFV013
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Verified
товару немає в наявності
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DEMOBOARDTLD1313ELTOBO1
Виробник: Infineon Technologies
Description: DEMOBOARD TLD1313EL
Packaging: Bulk
Voltage - Output: 40V
Voltage - Input: 5.5V ~ 40V
Current - Output / Channel: 120mA
Utilized IC / Part: TLD1313EL
Supplied Contents: Board(s)
Outputs and Type: 3 Non-Isolated Outputs
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+9867.10 грн
В кошику  од. на суму  грн.
D1821SH45TPRXPSA1 D1821SH.pdf
D1821SH45TPRXPSA1
Виробник: Infineon Technologies
Description: DIODE STANDARD 4500V 2210A
Packaging: Tray
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2210A
Operating Temperature - Junction: 0°C ~ 140°C
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 2500 A
Current - Reverse Leakage @ Vr: 150 mA @ 4500 V
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LWLR10LR87L3000HPSA1 Infineon-LIGHT%20FIBER%20LWL%20R10-LR87-DS-v02_01-EN.pdf?fileId=5546d462525dbac401532cafdddc74d1
LWLR10LR87L3000HPSA1
Виробник: Infineon Technologies
Description: FIBER OPTIC CBL 3M
Packaging: Tray
Cable Diameter: 0.11" (2.8mm), 0.12" (3.0mm)
Length - Overall: 9.8' (3.0m)
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IFS100V12PT4BOSA1 IFS100V12PT4.pdf
Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 100A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 65°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
товару немає в наявності
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CYW15G0403DXB-BGI
CYW15G0403DXB-BGI
Виробник: Infineon Technologies
Description: IC TELECOM INTERFACE 256BGA
Packaging: Tray
Package / Case: 256-BGA Exposed Pad
Mounting Type: Surface Mount
Voltage - Supply: 3.135V ~ 3.465V
Supplier Device Package: 256-L2BGA (27x27)
Number of Circuits: 4
на замовлення 1210 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+6201.87 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
EVALBGA123N6TOBO1 Infineon-BGA123N6-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c7f2a768a017f975b343074f4
EVALBGA123N6TOBO1
Виробник: Infineon Technologies
Description: EVAL BGA123N6
Packaging: Bulk
For Use With/Related Products: BGA123N6
Frequency: 1.55GHz ~ 1.615GHz
Type: Amplifier
Supplied Contents: Board(s)
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+10988.04 грн
В кошику  од. на суму  грн.
EVALBGA125N6TOBO1 Infineon-BGA125N6-DataSheet-v02_05-EN.pdf?fileId=8ac78c8c7f2a768a017f975b483c74f7
EVALBGA125N6TOBO1
Виробник: Infineon Technologies
Description: EVAL BGA125N6
Packaging: Bulk
For Use With/Related Products: BGA125N6
Frequency: 1.164GHz ~ 1.3GHz
Type: Amplifier
Supplied Contents: Board(s)
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+10988.04 грн
В кошику  од. на суму  грн.
IR3622MTRPBF IR3622MPbF.pdf
IR3622MTRPBF
Виробник: Infineon Technologies
Description: IC REG CTRLR BUCK 32MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 600kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 7.5V ~ 14.5V
Supplier Device Package: 32-MLPQ (5x5)
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Frequency Control, Power Good, Sequencing, Soft Start, Tracking
Output Phases: 2
Duty Cycle (Max): 84%
Clock Sync: Yes
Number of Outputs: 2
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IR3622MTRPBF IR3622MPbF.pdf
IR3622MTRPBF
Виробник: Infineon Technologies
Description: IC REG CTRLR BUCK 32MLPQ
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 600kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 7.5V ~ 14.5V
Supplier Device Package: 32-MLPQ (5x5)
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Frequency Control, Power Good, Sequencing, Soft Start, Tracking
Output Phases: 2
Duty Cycle (Max): 84%
Clock Sync: Yes
Number of Outputs: 2
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IR3622MTRPBF IR3622MPbF.pdf
IR3622MTRPBF
Виробник: Infineon Technologies
Description: IC REG CTRLR BUCK 32MLPQ
Packaging: Bulk
Package / Case: 32-VFQFN Exposed Pad
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 600kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 7.5V ~ 14.5V
Supplier Device Package: 32-MLPQ (5x5)
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Frequency Control, Power Good, Sequencing, Soft Start, Tracking
Output Phases: 2
Duty Cycle (Max): 84%
Clock Sync: Yes
Number of Outputs: 2
на замовлення 3457 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
154+147.28 грн
Мінімальне замовлення: 154
В кошику  од. на суму  грн.
CY2DL814ZXI cy2dl814_8.pdf
CY2DL814ZXI
Виробник: Infineon Technologies
Description: IC CLK BUFFER 1:4 400MHZ 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVDS
Type: Fanout Buffer (Distribution)
Input: LVDS, LVPECL, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:4
Differential - Input:Output: Yes/Yes
Supplier Device Package: 16-TSSOP
Frequency - Max: 400 MHz
товару немає в наявності
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BC857SH6827XTSA1 bc856s_bc856u_bc857s.pdf?folderId=db3a304314dca389011541d30fa21656&fileId=db3a304314dca38901154200fdcd16ef
BC857SH6827XTSA1
Виробник: Infineon Technologies
Description: TRANS 2PNP 45V 0.1A PG-SOT363-PO
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT363-PO
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BC857SH6827XTSA1 bc856s_bc856u_bc857s.pdf?folderId=db3a304314dca389011541d30fa21656&fileId=db3a304314dca38901154200fdcd16ef
BC857SH6827XTSA1
Виробник: Infineon Technologies
Description: TRANS 2PNP 45V 0.1A PG-SOT363-PO
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT363-PO
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5887+3.76 грн
Мінімальне замовлення: 5887
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SPOC2DBBTS712204ESATOBO1
SPOC2DBBTS712204ESATOBO1
Виробник: Infineon Technologies
Description: SPOC-2 DB BTS71220-4ESA
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS71220-4ESA
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+5223.20 грн
В кошику  од. на суму  грн.
BTS71202EPADAUGHBRDTOBO1 Infineon-BTS7120-2EPA-DataSheet-v01_10-EN.pdf?fileId=5546d462636cc8fb016421dc08d31138
BTS71202EPADAUGHBRDTOBO1
Виробник: Infineon Technologies
Description: BTS7120-2EPA DAUGH BRD
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7120-2EPA
товару немає в наявності
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T880N16TOFXPSA1 Infineon-T880N-DS-v01_00-en_de.pdf?fileId=db3a304323b87bc20123ffb85bf75bf8
T880N16TOFXPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 1800V 1750A DO200AB
Packaging: Bulk
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 880 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 1750 A
Voltage - Off State: 1.8 kV
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+11890.36 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FS225R12OE4BOSA1 Infineon-FS225R12OE4-DS-v03_01-en_de.pdf?fileId=db3a304336797ff90136ab5334d94ca0
FS225R12OE4BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 350A 1250W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 350 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
на замовлення 157 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+17241.12 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
XMC7100-E272K4160AA Infineon-XMC-7100-Datasheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8412f8d30184443160ae4415
XMC7100-E272K4160AA
Виробник: Infineon Technologies
Description: IC MCU 32BIT 4.06MB 272LFBGA
Packaging: Tray
Package / Case: 272-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 4.063MB (4.063M x 8)
RAM Size: 768K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
Data Converters: A/D 72x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, FIFO, I2C, IrDA, MMC/SD/SDIO, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 272-BGA (16x16)
Number of I/O: 207
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IPD60R650CEAUMA1 Infineon-IPA60R650CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c851db3d1f55
IPD60R650CEAUMA1
Виробник: Infineon Technologies
Description: CONSUMER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
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IPD60R650CEAUMA1 Infineon-IPA60R650CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c851db3d1f55
IPD60R650CEAUMA1
Виробник: Infineon Technologies
Description: CONSUMER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
на замовлення 1971 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+75.36 грн
10+42.94 грн
100+32.18 грн
500+27.06 грн
1000+25.26 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
CY7C65620-56LFXCT download
CY7C65620-56LFXCT
Виробник: Infineon Technologies
Description: IC USB HUB CTRLR 2PORT 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Function: Hub Controller
Interface: USB
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.15V ~ 3.45V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 56-QFN (8x8)
DigiKey Programmable: Not Verified
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S29GL01GS11FHB020 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL01GS11FHB020
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Verified
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BB644E7904HTSA1 bb644_bb664series.pdf
BB644E7904HTSA1
Виробник: Infineon Technologies
Description: DIODE VAR CAP 30V 20MA SOD-323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SOD323-3D
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 17.8
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IRS21531DPBF description IRSDS08244-1.pdf?t.download=true&u=5oefqw
IRS21531DPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.4V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 120ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 180mA, 260mA
DigiKey Programmable: Not Verified
на замовлення 6044 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
143+144.93 грн
Мінімальне замовлення: 143
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DF23MR12W1M1PB11BPSA1 Infineon-DF23MR12W1M1P_B11-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b7017153f0de295eb5
DF23MR12W1M1PB11BPSA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 1200V 25A AG-EASY1B
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 10mA
Supplier Device Package: AG-EASY1B-2
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+5954.01 грн
Мінімальне замовлення: 4
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FP15R12W1T7B3BOMA1 Infineon-FP15R12W1T7_B3-DataSheet-v00_10-EN.pdf?fileId=5546d46270c4f93e0170f185a2eb72da
FP15R12W1T7B3BOMA1
Виробник: Infineon Technologies
Description: IGBT MODULE LOW POWER EASY
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: 175°C (TJ)
NTC Thermistor: No
Supplier Device Package: AG-EASY1B-2
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
на замовлення 24 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+2429.25 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
FP15R12W1T7B11BOMA1 Infineon-FP15R12W1T7_B11-DataSheet-v00_10-EN.pdf?fileId=5546d462700c0ae6017057c6ba956751
FP15R12W1T7B11BOMA1
Виробник: Infineon Technologies
Description: IGBT MODULE LOW POWER EASY
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: 175°C (TJ)
NTC Thermistor: No
Supplier Device Package: AG-EASY1B-2
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
на замовлення 48 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+2601.83 грн
Мінімальне замовлення: 9
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PTFA191001EV4R250XTMA1 PTFA191001E_F.pdf
PTFA191001EV4R250XTMA1
Виробник: Infineon Technologies
Description: RF MOSFET LDMOS 30V H-36248-2
Packaging: Tape & Reel (TR)
Package / Case: 2-Flatpack, Fin Leads
Current Rating (Amps): 10µA
Mounting Type: Surface Mount
Frequency: 1.96GHz
Power - Output: 44dBm
Gain: 17dB
Technology: LDMOS
Supplier Device Package: H-36248-2
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 900 mA
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PTFA191001EV4XWSA1 PTFA191001E_F.pdf
PTFA191001EV4XWSA1
Виробник: Infineon Technologies
Description: RF MOSFET LDMOS 30V H-36248-2
Packaging: Tray
Package / Case: 2-Flatpack, Fin Leads
Current Rating (Amps): 10µA
Mounting Type: Surface Mount
Frequency: 1.96GHz
Power - Output: 44dBm
Gain: 17dB
Technology: LDMOS
Supplier Device Package: H-36248-2
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 900 mA
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PTFA212001F/1 P4 fundamentals-of-power-semiconductors
PTFA212001F/1 P4
Виробник: Infineon Technologies
Description: RF MOSFET LDMOS 30V H-37260-2
Packaging: Tray
Package / Case: 2-Flatpack, Fin Leads, Flanged
Current Rating (Amps): 10µA
Mounting Type: Surface Mount
Frequency: 2.14GHz
Power - Output: 50W
Gain: 15.8dB
Technology: LDMOS
Supplier Device Package: H-37260-2
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 1.6 A
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FZ2400R12HE4B9HOSA2 Infineon-FZ2400R12HE4_B9-DS-v02_04-EN.pdf?fileId=db3a30433e4143bd013e46d8f64f417d
FZ2400R12HE4B9HOSA2
Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 3560A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 2400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 3560 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 13500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+69565.00 грн
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IDB15E60ATMA1 Infineon-IDB15E60-DS-v02_04-en.pdf?fileId=db3a304412b407950112b438c7b86b98
IDB15E60ATMA1
Виробник: Infineon Technologies
Description: DIODE GP 600V 29.2A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 87 ns
Technology: Standard
Current - Average Rectified (Io): 29.2A
Supplier Device Package: PG-TO263-3-2
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
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IRL3705ZPBF description irl3705zpbf.pdf?fileId=5546d462533600a40153565f3a192536
IRL3705ZPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
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IRFR3910TRLPBF irfr3910pbf.pdf?fileId=5546d462533600a401535631f05d20df
IRFR3910TRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 16A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
на замовлення 364238 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
480+43.48 грн
Мінімальне замовлення: 480
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IPF021N13NM6ATMA1 IPF021N13NM6_Rev2.0_10-16-23.pdf
IPF021N13NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
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IPF021N13NM6ATMA1 IPF021N13NM6_Rev2.0_10-16-23.pdf
IPF021N13NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
на замовлення 727 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+500.03 грн
10+333.50 грн
100+260.56 грн
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ICE2PCS06GXUMA1 ProductDatasheetICE2PCS06_v1.1+Mar2010.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a3043327f13e3013285ff4ecb2e77
ICE2PCS06GXUMA1
Виробник: Infineon Technologies
Description: IC PFC CTRLR CCM 70KHZ 8DSO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 26V
Frequency - Switching: 58kHz ~ 70kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DSO-8
Current - Startup: 450 µA
на замовлення 81792 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
376+55.21 грн
Мінімальне замовлення: 376
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AUIRL3705Z auirl3705z.pdf?fileId=5546d462533600a4015355bac1911546
AUIRL3705Z
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Qualification: AEC-Q101
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CY7C0853AV-100BBC
CY7C0853AV-100BBC
Виробник: Infineon Technologies
Description: IC SRAM 9MBIT PARALLEL 172FBGA
Packaging: Tray
Package / Case: 172-LBGA
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Technology: SRAM - Dual Port, Synchronous
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 172-FBGA (15x15)
Memory Interface: Parallel
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
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IPB60R210CFD7ATMA1 Infineon-IPB60R210CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb2a0bf0c1ac0
IPB60R210CFD7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
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IPB60R210CFD7ATMA1 Infineon-IPB60R210CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb2a0bf0c1ac0
IPB60R210CFD7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
на замовлення 990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+248.05 грн
10+155.49 грн
100+108.07 грн
500+82.40 грн
Мінімальне замовлення: 2
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S25FL128SAGNFA003 Infineon-S25FL128SS25FL256S_128_Mb_(16_MB)256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SAGNFA003
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
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S25FL128SAGNFA003 Infineon-S25FL128SS25FL256S_128_Mb_(16_MB)256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SAGNFA003
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
на замовлення 2384 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+336.75 грн
10+288.38 грн
25+274.94 грн
50+248.91 грн
100+240.11 грн
250+228.95 грн
500+217.22 грн
1000+209.52 грн
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IRGS4B60KD1TRRP fundamentals-of-power-semiconductors
IRGS4B60KD1TRRP
Виробник: Infineon Technologies
Description: IGBT NPT 600V 11A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 93 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
Supplier Device Package: D2PAK
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/100ns
Switching Energy: 73µJ (on), 47µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 12 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 63 W
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