Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149380) > Сторінка 746 з 2490
Фото | Назва | Виробник | Інформація |
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CY8C21323-24LQXIT | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 24-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 4KB (4K x 8) RAM Size: 256 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Data Converters: A/D 8x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V Connectivity: I2C, SPI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 24-QFN (4x4) Number of I/O: 16 DigiKey Programmable: Not Verified |
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CY8C21323-24LQXIT | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 24-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 4KB (4K x 8) RAM Size: 256 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Data Converters: A/D 8x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V Connectivity: I2C, SPI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 24-QFN (4x4) Number of I/O: 16 DigiKey Programmable: Not Verified |
на замовлення 2281 шт: термін постачання 21-31 дні (днів) |
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TLV4906KFTSA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Features: Temperature Compensated Package / Case: TO-236-3, SC-59, SOT-23-3 Output Type: Open Drain Polarization: South Pole Mounting Type: Surface Mount Function: Unipolar Switch Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 18V Technology: Hall Effect Sensing Range: 13.9mT Trip, 4.7mT Release Current - Output (Max): 20mA Current - Supply (Max): 6mA Supplier Device Package: PG-SC59-3 Test Condition: -40°C ~ 85°C Grade: Automotive Qualification: AEC-Q100 |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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TLV4906KFTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Features: Temperature Compensated Package / Case: TO-236-3, SC-59, SOT-23-3 Output Type: Open Drain Polarization: South Pole Mounting Type: Surface Mount Function: Unipolar Switch Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 18V Technology: Hall Effect Sensing Range: 13.9mT Trip, 4.7mT Release Current - Output (Max): 20mA Current - Supply (Max): 6mA Supplier Device Package: PG-SC59-3 Test Condition: -40°C ~ 85°C Grade: Automotive Qualification: AEC-Q100 |
на замовлення 17313 шт: термін постачання 21-31 дні (днів) |
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S25FS256SDSBHB200 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NOR Clock Frequency: 80 MHz Memory Format: FLASH Supplier Device Package: 24-BGA (8x6) Grade: Automotive Memory Interface: SPI - Quad I/O, QPI Memory Organization: 32M x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
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CY8C4125AZS-M443T | Infineon Technologies |
Description: IC MCU 32BIT 32KB FLASH 48LQFP Packaging: Tape & Reel (TR) Package / Case: 48-LQFP Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 32KB (32K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 16x12b SAR Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, WDT Supplier Device Package: 48-TQFP (7x7) Number of I/O: 38 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY8C4125AZS-M445 | Infineon Technologies |
Description: IC MCU 32BIT 32KB FLASH 64LQFP Packaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 32KB (32K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 16x12b SAR Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, WDT Supplier Device Package: 64-TQFP (10x10) Number of I/O: 51 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY8C4125AZS-M445T | Infineon Technologies |
Description: IC MCU 32BIT 32KB FLASH 64LQFP Packaging: Tape & Reel (TR) Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 32KB (32K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 16x12b SAR Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, WDT Supplier Device Package: 64-TQFP (10x10) Number of I/O: 51 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY8C4126AZS-M443T | Infineon Technologies |
Description: IC MCU 32BIT 64KB FLASH 64LQFP Packaging: Tape & Reel (TR) Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 64KB (64K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 16x12b SAR Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, WDT Supplier Device Package: 64-TQFP (10x10) Grade: Automotive Number of I/O: 38 Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY8C4126AZS-M445 | Infineon Technologies |
Description: IC MCU 32BIT 64KB FLASH 64LQFP Packaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 64KB (64K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 16x12b SAR Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT Supplier Device Package: 64-TQFP (10x10) Grade: Automotive Number of I/O: 51 Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY8C4126AZS-M445T | Infineon Technologies |
Description: IC MCU 32BIT 64KB FLASH 64LQFP Packaging: Tape & Reel (TR) Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 64KB (64K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 16x12b SAR Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, WDT Supplier Device Package: 64-TQFP (10x10) Grade: Automotive Number of I/O: 51 Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY8C4246AZS-M443 | Infineon Technologies |
Description: IC MCU 32BIT 64KB FLASH 48LQFP Packaging: Tray Package / Case: 48-LQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 64KB (64K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 24x12b SAR; D/A 4x7/8b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT Supplier Device Package: 48-TQFP (7x7) Grade: Automotive Number of I/O: 38 Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY8C4246AZS-M445 | Infineon Technologies |
Description: IC MCU 32BIT 64KB FLASH 64LQFP Packaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 64KB (64K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 24x12b SAR; D/A 4x7/8b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT Supplier Device Package: 64-TQFP (10x10) Grade: Automotive Number of I/O: 51 Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY8C4246AZS-M445T | Infineon Technologies |
Description: IC MCU 32BIT 64KB FLASH 64LQFP Packaging: Tape & Reel (TR) Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 64KB (64K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 16x12b SAR; D/A 4x7/8b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, LCD, LVD, POR, PWM, SmartSense, Temp Sensor, WDT Supplier Device Package: 64-TQFP (10x10) Grade: Automotive Number of I/O: 51 Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FB30R06W1E3BOMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 39 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 115 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V |
на замовлення 24 шт: термін постачання 21-31 дні (днів) |
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FP30R06KE3BOSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 37 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 125 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V |
на замовлення 7 шт: термін постачання 21-31 дні (днів) |
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FP30R06W1E3B11BOMA1 | Infineon Technologies |
![]() Packaging: Bulk |
на замовлення 58 шт: термін постачання 21-31 дні (днів) |
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IJW120R070T1FKSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 19.5V (VGS) Voltage - Breakdown (V(BR)GSS): 1200 V Current Drain (Id) - Max: 35 A Supplier Device Package: PG-TO247-3 Drain to Source Voltage (Vdss): 1200 V Power - Max: 238 W Resistance - RDS(On): 70 mOhms Current - Drain (Idss) @ Vds (Vgs=0): 3.3 µA @ 1200 V |
на замовлення 330 шт: термін постачання 21-31 дні (днів) |
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IRG7PH35UD1MPBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Supplier Device Package: TO-247AD IGBT Type: Trench Td (on/off) @ 25°C: -/160ns Switching Energy: 620µJ (off) Test Condition: 600V, 20A, 10Ohm, 15V Gate Charge: 130 nC Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 150 A Power - Max: 179 W |
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В кошику од. на суму грн. | ||||||||||||||||
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IRG7PH35UD1-EP | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Supplier Device Package: TO-247AD IGBT Type: Trench Td (on/off) @ 25°C: -/160ns Switching Energy: 620µJ (off) Test Condition: 600V, 20A, 10Ohm, 15V Gate Charge: 130 nC Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 150 A Power - Max: 179 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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D1800N48TVFXPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: DO-200AC, K-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1800A Operating Temperature - Junction: -40°C ~ 160°C Voltage - DC Reverse (Vr) (Max): 4800 V Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1500 A Current - Reverse Leakage @ Vr: 100 mA @ 4800 V |
на замовлення 8 шт: термін постачання 21-31 дні (днів) |
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CY8C4024LQS-S413 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 40-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 16KB (16K x 8) RAM Size: 2K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 16x10b; D/A 2x7b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT Supplier Device Package: 40-QFN (6x6) Number of I/O: 34 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
CY8C4024LQS-S413T | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 40-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 16KB (16K x 8) RAM Size: 2K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 16x10b; D/A 2x7b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT Supplier Device Package: 40-QFN (6x6) Number of I/O: 34 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
CY8C4025LQSS413XQLA1 | Infineon Technologies |
![]() Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
CY8C4025LQSS413TXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FD1200R12IE4B1S1BDMA1 | Infineon Technologies |
![]() Packaging: Bulk |
на замовлення 84 шт: термін постачання 21-31 дні (днів) |
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F3L6MR20W2M1HB70BPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 2000V (2kV) Current - Continuous Drain (Id) @ 25°C: 155A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 24100pF @ 1.2kV Rds On (Max) @ Id, Vgs: 8.7mOhm @ 100A, 18V Gate Charge (Qg) (Max) @ Vgs: 297nC @ 18V FET Feature: Silicon Carbide (SiC) Vgs(th) (Max) @ Id: 5.15V @ 112mA |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
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FF6MR20W2M1HB70BPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 2000V (2kV) Current - Continuous Drain (Id) @ 25°C: 160A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 24100pF @ 1.2kV Rds On (Max) @ Id, Vgs: 8.1mOhm @ 160A, 18V Gate Charge (Qg) (Max) @ Vgs: 780nC @ 3V FET Feature: Silicon Carbide (SiC) Vgs(th) (Max) @ Id: 5.15V @ 112mA |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
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IM06B20AC1XKMA1 | Infineon Technologies |
Description: IGBT IPM 650V 20A 24-PWRDIP MOD Packaging: Tray Package / Case: 24-PowerDIP Module (1.028", 26.10mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 2000Vrms Current: 20 A Voltage: 650 V |
на замовлення 117 шт: термін постачання 21-31 дні (днів) |
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IM06B30AC1XKMA1 | Infineon Technologies |
Description: IGBT IPM 650V 30A 24-PWRDIP MOD Packaging: Tray Package / Case: 24-PowerDIP Module (1.028", 26.10mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 2000Vrms Current: 30 A Voltage: 650 V |
на замовлення 152 шт: термін постачання 21-31 дні (днів) |
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SPOC2DBBTS710404ESATOBO1 | Infineon Technologies |
Description: SPOC-2 DB BTS71040-4ESA Packaging: Bulk Function: Switch Type: Power Management Contents: Board(s) Utilized IC / Part: BTS71040-4ESA |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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SPOC2DBBTS710404ESPTOBO1 | Infineon Technologies |
![]() Packaging: Box Function: Switch Type: Power Management Contents: Board(s) Utilized IC / Part: BTS71040-4ESP |
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В кошику од. на суму грн. | ||||||||||||||||
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IGLT65R035D2ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Power Dissipation (Max): 154W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 4.2mA Supplier Device Package: PG-HDSOP-16-8 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V |
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В кошику од. на суму грн. | ||||||||||||||||
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IGLT65R035D2ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Power Dissipation (Max): 154W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 4.2mA Supplier Device Package: PG-HDSOP-16-8 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V |
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В кошику од. на суму грн. | ||||||||||||||||
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IGOT65R035D2AUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 20-BFSOP (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Power Dissipation (Max): 134W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 4.2mA Supplier Device Package: PG-DSO-20-91 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V |
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В кошику од. на суму грн. | ||||||||||||||||
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IGOT65R035D2AUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 20-BFSOP (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Power Dissipation (Max): 134W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 4.2mA Supplier Device Package: PG-DSO-20-91 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IMBG120R040M2HXTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 39.6mOhm @ 17.5A, 18V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 5.5mA Supplier Device Package: PG-TO263-7-12 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IMBG120R040M2HXTMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 39.6mOhm @ 17.5A, 18V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 5.5mA Supplier Device Package: PG-TO263-7-12 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 800 V |
на замовлення 561 шт: термін постачання 21-31 дні (днів) |
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IMLT65R015M2HXTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 142A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 64.2A, 18V Power Dissipation (Max): 600W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 13mA Supplier Device Package: PG-HDSOP-16-6 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IMLT65R015M2HXTMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 142A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 64.2A, 18V Power Dissipation (Max): 600W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 13mA Supplier Device Package: PG-HDSOP-16-6 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V |
на замовлення 1046 шт: термін постачання 21-31 дні (днів) |
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AIMBG75R016M1HXTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AIMBG75R016M1HXTMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) |
на замовлення 725 шт: термін постачання 21-31 дні (днів) |
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KITA2GTC3975VTRBTOBO1 | Infineon Technologies |
![]() Packaging: Bulk Mounting Type: Fixed Type: MCU 32-Bit Contents: Board(s) Core Processor: TriCore™ Utilized IC / Part: TC397 Platform: AURIX TC397 5V TRB Fixed |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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KITA2GTC3645VTRBSTOBO1 | Infineon Technologies |
![]() Packaging: Bulk Mounting Type: Socket Type: MCU 32-Bit Contents: Board(s) Core Processor: TriCore™ Utilized IC / Part: TC364 Platform: AURIX TC364 5V TRB Socket |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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KITA2GTC3775VTRBSTOBO1 | Infineon Technologies |
![]() Packaging: Bulk Mounting Type: Socket Type: MCU 32-Bit Contents: Board(s) Core Processor: TriCore™ Utilized IC / Part: TC377 Platform: AURIX TC377 5V TRB Socket |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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APPKITA2GSAFETYTOBO1 | Infineon Technologies |
![]() Packaging: Box Mounting Type: Fixed Type: MCU 32-Bit Contents: Board(s) Core Processor: TriCore™ Utilized IC / Part: TC397 Platform: AURIX |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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KITA2GTC3895VTRBTOBO1 | Infineon Technologies |
Description: KIT_A2G_TC389_5V_TRB Packaging: Bulk Mounting Type: Fixed Type: MCU 32-Bit Contents: Board(s) Core Processor: TriCore™ Utilized IC / Part: TC389 Platform: AURIX |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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FS100R12KT4GBOSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 515 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
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IPD50N03S207ATMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 50A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 4V @ 85µA Supplier Device Package: PG-TO252-3-11 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 17163 шт: термін постачання 21-31 дні (днів) |
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IPI70N04S406AKSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 70A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 4V @ 26µA Supplier Device Package: PG-TO262-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 25 V |
на замовлення 4980 шт: термін постачання 21-31 дні (днів) |
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TLT9252VLCXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 14-TDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Type: Transceiver Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 5.5V Number of Drivers/Receivers: 1/1 Data Rate: 5Mbps Protocol: CANbus Supplier Device Package: PG-TSON-14-3 Receiver Hysteresis: 30 mV Duplex: Half Grade: Automotive Qualification: AEC-Q100 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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CY8C20246A-24LKXIT | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-UFQFN Mounting Type: Surface Mount Interface: I2C, SPI RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.71V ~ 5.5V Controller Series: CY8C20xx6A Program Memory Type: FLASH (16kB) Applications: Capacitive Sensing Core Processor: M8C Supplier Device Package: 16-QFN (3x3) Number of I/O: 13 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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T1190N16TOFVTXPSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-200AC Mounting Type: Clamp On Operating Temperature: -40°C ~ 125°C Structure: Single Current - Hold (Ih) (Max): 500 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 22500A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 1190 A Voltage - Gate Trigger (Vgt) (Max): 2 V Current - On State (It (RMS)) (Max): 2800 A Voltage - Off State: 1.8 kV |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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T1500N16TOFVTXPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: DO-200AB, B-PUK Mounting Type: Clamp On Operating Temperature: -40°C ~ 140°C Structure: Single Current - Hold (Ih) (Max): 500 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 39000A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 1500 A Voltage - Gate Trigger (Vgt) (Max): 2 V Current - On State (It (RMS)) (Max): 3500 A Voltage - Off State: 1.8 kV |
на замовлення 8 шт: термін постачання 21-31 дні (днів) |
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T1500N18TOFVTXPSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: DO-200AB, B-PUK Mounting Type: Clamp On Operating Temperature: -40°C ~ 125°C Structure: Single Current - Hold (Ih) (Max): 500 mA Current - Gate Trigger (Igt) (Max): 350 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 39000A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 1500 A Voltage - Gate Trigger (Vgt) (Max): 2 V Current - On State (It (RMS)) (Max): 3500 A Voltage - Off State: 1.8 kV |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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T2600N16TOFVTXPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: TO-200AD Mounting Type: Chassis Mount Operating Temperature: 135°C (TJ) Structure: Single Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 2610 A Voltage - Gate Trigger (Vgt) (Max): 2 V Current - On State (It (RMS)) (Max): 4100 A Voltage - Off State: 1.8 kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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T2600N18TOFVTXPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: TO-200AD Mounting Type: Chassis Mount Operating Temperature: 135°C (TJ) Structure: Single Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 2610 A Voltage - Gate Trigger (Vgt) (Max): 2 V Current - On State (It (RMS)) (Max): 4100 A Voltage - Off State: 1.8 kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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T3800N18TOFVTXPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: TO-200AE Mounting Type: Chassis Mount Operating Temperature: 135°C (TJ) Structure: Single Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 63000A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 3800 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Current - On State (It (RMS)) (Max): 5970 A Voltage - Off State: 1.8 kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IGD08N120S7ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A Supplier Device Package: PG-TO252-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 15ns/149ns Switching Energy: 460µJ (on), 410µJ (off) Test Condition: 600V, 8A, 20Ohm, 15V Gate Charge: 55 nC Current - Collector (Ic) (Max): 24 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 24 A Power - Max: 106 W |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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IGD08N120S7ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A Supplier Device Package: PG-TO252-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 15ns/149ns Switching Energy: 460µJ (on), 410µJ (off) Test Condition: 600V, 8A, 20Ohm, 15V Gate Charge: 55 nC Current - Collector (Ic) (Max): 24 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 24 A Power - Max: 106 W |
на замовлення 2663 шт: термін постачання 21-31 дні (днів) |
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CY8C21323-24LQXIT |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 4KB FLASH 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 8x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 16
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 4KB FLASH 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 8x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
CY8C21323-24LQXIT |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 4KB FLASH 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 8x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 16
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 4KB FLASH 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 8x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 16
DigiKey Programmable: Not Verified
на замовлення 2281 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 336.27 грн |
10+ | 245.43 грн |
25+ | 225.86 грн |
100+ | 191.73 грн |
250+ | 182.09 грн |
500+ | 176.28 грн |
1000+ | 168.68 грн |
TLV4906KFTSA1 |
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Виробник: Infineon Technologies
Description: MAGNETIC SWITCH UNIPOLAR SC59
Packaging: Tape & Reel (TR)
Features: Temperature Compensated
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 13.9mT Trip, 4.7mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SC59-3
Test Condition: -40°C ~ 85°C
Grade: Automotive
Qualification: AEC-Q100
Description: MAGNETIC SWITCH UNIPOLAR SC59
Packaging: Tape & Reel (TR)
Features: Temperature Compensated
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 13.9mT Trip, 4.7mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SC59-3
Test Condition: -40°C ~ 85°C
Grade: Automotive
Qualification: AEC-Q100
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 18.58 грн |
6000+ | 17.42 грн |
TLV4906KFTSA1 |
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Виробник: Infineon Technologies
Description: MAGNETIC SWITCH UNIPOLAR SC59
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 13.9mT Trip, 4.7mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SC59-3
Test Condition: -40°C ~ 85°C
Grade: Automotive
Qualification: AEC-Q100
Description: MAGNETIC SWITCH UNIPOLAR SC59
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 13.9mT Trip, 4.7mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SC59-3
Test Condition: -40°C ~ 85°C
Grade: Automotive
Qualification: AEC-Q100
на замовлення 17313 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7+ | 52.62 грн |
8+ | 42.75 грн |
10+ | 39.90 грн |
25+ | 34.15 грн |
50+ | 31.84 грн |
100+ | 29.69 грн |
500+ | 24.79 грн |
1000+ | 23.10 грн |
S25FS256SDSBHB200 |
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Виробник: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
CY8C4125AZS-M443T |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 48LQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 38
Description: IC MCU 32BIT 32KB FLASH 48LQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 38
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CY8C4125AZS-M445 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 51
Description: IC MCU 32BIT 32KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 51
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CY8C4125AZS-M445T |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 51
Description: IC MCU 32BIT 32KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 51
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CY8C4126AZS-M443T |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 38
Qualification: AEC-Q100
Description: IC MCU 32BIT 64KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 38
Qualification: AEC-Q100
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CY8C4126AZS-M445 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 51
Qualification: AEC-Q100
Description: IC MCU 32BIT 64KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 51
Qualification: AEC-Q100
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CY8C4126AZS-M445T |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 51
Qualification: AEC-Q100
Description: IC MCU 32BIT 64KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 51
Qualification: AEC-Q100
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CY8C4246AZS-M443 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 24x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 48-TQFP (7x7)
Grade: Automotive
Number of I/O: 38
Qualification: AEC-Q100
Description: IC MCU 32BIT 64KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 24x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 48-TQFP (7x7)
Grade: Automotive
Number of I/O: 38
Qualification: AEC-Q100
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CY8C4246AZS-M445 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 24x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 51
Qualification: AEC-Q100
Description: IC MCU 32BIT 64KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 24x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 51
Qualification: AEC-Q100
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CY8C4246AZS-M445T |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, LCD, LVD, POR, PWM, SmartSense, Temp Sensor, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 51
Qualification: AEC-Q100
Description: IC MCU 32BIT 64KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, LCD, LVD, POR, PWM, SmartSense, Temp Sensor, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 51
Qualification: AEC-Q100
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FB30R06W1E3BOMA1 |
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Виробник: Infineon Technologies
Description: IGBT MODULE 600V 39A 115W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 39 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 115 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
Description: IGBT MODULE 600V 39A 115W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 39 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 115 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
на замовлення 24 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10+ | 2500.21 грн |
FP30R06KE3BOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MODULE 600V 37A 125W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 37 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 125 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
Description: IGBT MODULE 600V 37A 125W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 37 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 125 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
на замовлення 7 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 4658.39 грн |
FP30R06W1E3B11BOMA1 |
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на замовлення 58 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10+ | 2586.29 грн |
IJW120R070T1FKSA1 |
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Виробник: Infineon Technologies
Description: JFET PWR FIELD EFFECT
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 19.5V (VGS)
Voltage - Breakdown (V(BR)GSS): 1200 V
Current Drain (Id) - Max: 35 A
Supplier Device Package: PG-TO247-3
Drain to Source Voltage (Vdss): 1200 V
Power - Max: 238 W
Resistance - RDS(On): 70 mOhms
Current - Drain (Idss) @ Vds (Vgs=0): 3.3 µA @ 1200 V
Description: JFET PWR FIELD EFFECT
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 19.5V (VGS)
Voltage - Breakdown (V(BR)GSS): 1200 V
Current Drain (Id) - Max: 35 A
Supplier Device Package: PG-TO247-3
Drain to Source Voltage (Vdss): 1200 V
Power - Max: 238 W
Resistance - RDS(On): 70 mOhms
Current - Drain (Idss) @ Vds (Vgs=0): 3.3 µA @ 1200 V
на замовлення 330 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10+ | 2499.71 грн |
IRG7PH35UD1MPBF |
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Виробник: Infineon Technologies
Description: IGBT TRENCH 1200V 50A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: -/160ns
Switching Energy: 620µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 130 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 179 W
Description: IGBT TRENCH 1200V 50A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: -/160ns
Switching Energy: 620µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 130 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 179 W
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IRG7PH35UD1-EP |
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Виробник: Infineon Technologies
Description: IGBT TRENCH 1200V 50A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: -/160ns
Switching Energy: 620µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 130 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 179 W
Description: IGBT TRENCH 1200V 50A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: -/160ns
Switching Energy: 620µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 130 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 179 W
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D1800N48TVFXPSA1 |
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Виробник: Infineon Technologies
Description: DIODE STANDARD 4800V 1800A
Packaging: Tray
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1800A
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 4800 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1500 A
Current - Reverse Leakage @ Vr: 100 mA @ 4800 V
Description: DIODE STANDARD 4800V 1800A
Packaging: Tray
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1800A
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 4800 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1500 A
Current - Reverse Leakage @ Vr: 100 mA @ 4800 V
на замовлення 8 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 34433.12 грн |
CY8C4024LQS-S413 |
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Виробник: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 34
Description: PSOC4 - GENERAL
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 34
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CY8C4024LQS-S413T |
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Виробник: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 34
Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 34
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FD1200R12IE4B1S1BDMA1 |
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на замовлення 84 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 88173.16 грн |
F3L6MR20W2M1HB70BPSA1 |
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Виробник: Infineon Technologies
Description: F3L6MR20W2M1HB70BPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 2000V (2kV)
Current - Continuous Drain (Id) @ 25°C: 155A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 24100pF @ 1.2kV
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 100A, 18V
Gate Charge (Qg) (Max) @ Vgs: 297nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 5.15V @ 112mA
Description: F3L6MR20W2M1HB70BPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 2000V (2kV)
Current - Continuous Drain (Id) @ 25°C: 155A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 24100pF @ 1.2kV
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 100A, 18V
Gate Charge (Qg) (Max) @ Vgs: 297nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 5.15V @ 112mA
на замовлення 15 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 21455.24 грн |
15+ | 20303.32 грн |
FF6MR20W2M1HB70BPSA1 |
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Виробник: Infineon Technologies
Description: FF6MR20W2M1HB70BPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 2000V (2kV)
Current - Continuous Drain (Id) @ 25°C: 160A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 24100pF @ 1.2kV
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 160A, 18V
Gate Charge (Qg) (Max) @ Vgs: 780nC @ 3V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 5.15V @ 112mA
Description: FF6MR20W2M1HB70BPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 2000V (2kV)
Current - Continuous Drain (Id) @ 25°C: 160A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 24100pF @ 1.2kV
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 160A, 18V
Gate Charge (Qg) (Max) @ Vgs: 780nC @ 3V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 5.15V @ 112mA
на замовлення 15 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 21307.25 грн |
15+ | 20142.87 грн |
IM06B20AC1XKMA1 |
Виробник: Infineon Technologies
Description: IGBT IPM 650V 20A 24-PWRDIP MOD
Packaging: Tray
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 20 A
Voltage: 650 V
Description: IGBT IPM 650V 20A 24-PWRDIP MOD
Packaging: Tray
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 20 A
Voltage: 650 V
на замовлення 117 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 562.36 грн |
IM06B30AC1XKMA1 |
Виробник: Infineon Technologies
Description: IGBT IPM 650V 30A 24-PWRDIP MOD
Packaging: Tray
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 30 A
Voltage: 650 V
Description: IGBT IPM 650V 30A 24-PWRDIP MOD
Packaging: Tray
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 30 A
Voltage: 650 V
на замовлення 152 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 661.84 грн |
SPOC2DBBTS710404ESATOBO1 |
Виробник: Infineon Technologies
Description: SPOC-2 DB BTS71040-4ESA
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS71040-4ESA
Description: SPOC-2 DB BTS71040-4ESA
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS71040-4ESA
на замовлення 2 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 5470.69 грн |
SPOC2DBBTS710404ESPTOBO1 |
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Виробник: Infineon Technologies
Description: SPOC-2 DB BTS71040-4ESP
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS71040-4ESP
Description: SPOC-2 DB BTS71040-4ESP
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS71040-4ESP
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IGLT65R035D2ATMA1 |
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Виробник: Infineon Technologies
Description: IGLT65R035D2ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Power Dissipation (Max): 154W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
Description: IGLT65R035D2ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Power Dissipation (Max): 154W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
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IGLT65R035D2ATMA1 |
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Виробник: Infineon Technologies
Description: IGLT65R035D2ATMA1
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Power Dissipation (Max): 154W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
Description: IGLT65R035D2ATMA1
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Power Dissipation (Max): 154W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
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IGOT65R035D2AUMA1 |
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Виробник: Infineon Technologies
Description: IGOT65R035D2AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Power Dissipation (Max): 134W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Supplier Device Package: PG-DSO-20-91
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
Description: IGOT65R035D2AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Power Dissipation (Max): 134W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Supplier Device Package: PG-DSO-20-91
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
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IGOT65R035D2AUMA1 |
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Виробник: Infineon Technologies
Description: IGOT65R035D2AUMA1
Packaging: Cut Tape (CT)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Power Dissipation (Max): 134W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Supplier Device Package: PG-DSO-20-91
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
Description: IGOT65R035D2AUMA1
Packaging: Cut Tape (CT)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Power Dissipation (Max): 134W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Supplier Device Package: PG-DSO-20-91
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
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IMBG120R040M2HXTMA1 |
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Виробник: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 39.6mOhm @ 17.5A, 18V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 5.5mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 800 V
Description: SIC DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 39.6mOhm @ 17.5A, 18V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 5.5mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 800 V
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IMBG120R040M2HXTMA1 |
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Виробник: Infineon Technologies
Description: SIC DISCRETE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 39.6mOhm @ 17.5A, 18V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 5.5mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 800 V
Description: SIC DISCRETE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 39.6mOhm @ 17.5A, 18V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 5.5mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 800 V
на замовлення 561 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 817.23 грн |
10+ | 542.88 грн |
100+ | 404.97 грн |
500+ | 344.29 грн |
IMLT65R015M2HXTMA1 |
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Виробник: Infineon Technologies
Description: SICFET N-CH 650V 142A HDSOP-16
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 142A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 64.2A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V
Description: SICFET N-CH 650V 142A HDSOP-16
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 142A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 64.2A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V
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IMLT65R015M2HXTMA1 |
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Виробник: Infineon Technologies
Description: SICFET N-CH 650V 142A HDSOP-16
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 142A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 64.2A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V
Description: SICFET N-CH 650V 142A HDSOP-16
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 142A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 64.2A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V
на замовлення 1046 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1063.06 грн |
10+ | 838.66 грн |
100+ | 776.97 грн |
AIMBG75R016M1HXTMA1 |
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на замовлення 725 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1778.34 грн |
10+ | 1235.71 грн |
100+ | 1002.06 грн |
KITA2GTC3975VTRBTOBO1 |
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Виробник: Infineon Technologies
Description: AURIX TC397 5V TRB FIXED BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: TriCore™
Utilized IC / Part: TC397
Platform: AURIX TC397 5V TRB Fixed
Description: AURIX TC397 5V TRB FIXED BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: TriCore™
Utilized IC / Part: TC397
Platform: AURIX TC397 5V TRB Fixed
на замовлення 4 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 67038.57 грн |
KITA2GTC3645VTRBSTOBO1 |
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Виробник: Infineon Technologies
Description: AURIX TC364 5V TRB SOCKET BRD
Packaging: Bulk
Mounting Type: Socket
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: TriCore™
Utilized IC / Part: TC364
Platform: AURIX TC364 5V TRB Socket
Description: AURIX TC364 5V TRB SOCKET BRD
Packaging: Bulk
Mounting Type: Socket
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: TriCore™
Utilized IC / Part: TC364
Platform: AURIX TC364 5V TRB Socket
на замовлення 3 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 98130.41 грн |
KITA2GTC3775VTRBSTOBO1 |
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Виробник: Infineon Technologies
Description: AURIX TC377 5V TRB SOCKET BRD
Packaging: Bulk
Mounting Type: Socket
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: TriCore™
Utilized IC / Part: TC377
Platform: AURIX TC377 5V TRB Socket
Description: AURIX TC377 5V TRB SOCKET BRD
Packaging: Bulk
Mounting Type: Socket
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: TriCore™
Utilized IC / Part: TC377
Platform: AURIX TC377 5V TRB Socket
на замовлення 2 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 129118.65 грн |
APPKITA2GSAFETYTOBO1 |
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Виробник: Infineon Technologies
Description: APPKITA2GSAFETYTOBO1
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: TriCore™
Utilized IC / Part: TC397
Platform: AURIX
Description: APPKITA2GSAFETYTOBO1
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: TriCore™
Utilized IC / Part: TC397
Platform: AURIX
на замовлення 5 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 44801.45 грн |
KITA2GTC3895VTRBTOBO1 |
Виробник: Infineon Technologies
Description: KIT_A2G_TC389_5V_TRB
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: TriCore™
Utilized IC / Part: TC389
Platform: AURIX
Description: KIT_A2G_TC389_5V_TRB
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: TriCore™
Utilized IC / Part: TC389
Platform: AURIX
на замовлення 3 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 69832.29 грн |
FS100R12KT4GBOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 100A 515W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
Description: IGBT MOD 1200V 100A 515W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
на замовлення 15 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 7334.54 грн |
IPD50N03S207ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 85µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 50A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 85µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 17163 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
313+ | 67.27 грн |
IPI70N04S406AKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 70A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 70A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 26µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 25 V
Description: MOSFET N-CH 40V 70A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 70A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 26µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 25 V
на замовлення 4980 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
414+ | 56.34 грн |
TLT9252VLCXUMA1 |
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Виробник: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 TSON-14
Packaging: Cut Tape (CT)
Package / Case: 14-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-TSON-14-3
Receiver Hysteresis: 30 mV
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
Description: IC TRANSCEIVER HALF 1/1 TSON-14
Packaging: Cut Tape (CT)
Package / Case: 14-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-TSON-14-3
Receiver Hysteresis: 30 mV
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 173.48 грн |
10+ | 124.14 грн |
25+ | 113.34 грн |
100+ | 95.27 грн |
250+ | 89.97 грн |
500+ | 86.77 грн |
1000+ | 82.76 грн |
2500+ | 80.03 грн |
CY8C20246A-24LKXIT |
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Виробник: Infineon Technologies
Description: IC MCU PSOC 16K FLASH 2K 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 16-QFN (3x3)
Number of I/O: 13
DigiKey Programmable: Not Verified
Description: IC MCU PSOC 16K FLASH 2K 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 16-QFN (3x3)
Number of I/O: 13
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
T1190N16TOFVTXPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1.8KV 2800A TO-200AC
Packaging: Bulk
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 22500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1190 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 2800 A
Voltage - Off State: 1.8 kV
Description: SCR MODULE 1.8KV 2800A TO-200AC
Packaging: Bulk
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 22500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1190 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 2800 A
Voltage - Off State: 1.8 kV
на замовлення 1 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 19923.54 грн |
T1500N16TOFVTXPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1.8KV 3500A DO-200AB
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 140°C
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 39000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1500 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 3500 A
Voltage - Off State: 1.8 kV
Description: SCR MODULE 1.8KV 3500A DO-200AB
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 140°C
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 39000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1500 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 3500 A
Voltage - Off State: 1.8 kV
на замовлення 8 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 22909.65 грн |
T1500N18TOFVTXPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1.8KV 3500A DO-200AB
Packaging: Bulk
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 39000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1500 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 3500 A
Voltage - Off State: 1.8 kV
Description: SCR MODULE 1.8KV 3500A DO-200AB
Packaging: Bulk
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 39000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1500 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 3500 A
Voltage - Off State: 1.8 kV
на замовлення 4 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 23879.80 грн |
T2600N16TOFVTXPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1.8KV 4100A TO-200AD
Packaging: Tray
Package / Case: TO-200AD
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 2610 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 4100 A
Voltage - Off State: 1.8 kV
Description: SCR MODULE 1.8KV 4100A TO-200AD
Packaging: Tray
Package / Case: TO-200AD
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 2610 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 4100 A
Voltage - Off State: 1.8 kV
товару немає в наявності
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T2600N18TOFVTXPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1.8KV 4100A TO-200AD
Packaging: Tray
Package / Case: TO-200AD
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 2610 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 4100 A
Voltage - Off State: 1.8 kV
Description: SCR MODULE 1.8KV 4100A TO-200AD
Packaging: Tray
Package / Case: TO-200AD
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 2610 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 4100 A
Voltage - Off State: 1.8 kV
товару немає в наявності
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T3800N18TOFVTXPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1.8KV 5970A TO-200AE
Packaging: Tray
Package / Case: TO-200AE
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 63000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 3800 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 5970 A
Voltage - Off State: 1.8 kV
Description: SCR MODULE 1.8KV 5970A TO-200AE
Packaging: Tray
Package / Case: TO-200AE
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 63000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 3800 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 5970 A
Voltage - Off State: 1.8 kV
товару немає в наявності
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IGD08N120S7ATMA1 |
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Виробник: Infineon Technologies
Description: IGBT TRENCH FS 1200V 24A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/149ns
Switching Energy: 460µJ (on), 410µJ (off)
Test Condition: 600V, 8A, 20Ohm, 15V
Gate Charge: 55 nC
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 106 W
Description: IGBT TRENCH FS 1200V 24A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/149ns
Switching Energy: 460µJ (on), 410µJ (off)
Test Condition: 600V, 8A, 20Ohm, 15V
Gate Charge: 55 nC
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 106 W
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 51.30 грн |
IGD08N120S7ATMA1 |
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Виробник: Infineon Technologies
Description: IGBT TRENCH FS 1200V 24A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/149ns
Switching Energy: 460µJ (on), 410µJ (off)
Test Condition: 600V, 8A, 20Ohm, 15V
Gate Charge: 55 nC
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 106 W
Description: IGBT TRENCH FS 1200V 24A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/149ns
Switching Energy: 460µJ (on), 410µJ (off)
Test Condition: 600V, 8A, 20Ohm, 15V
Gate Charge: 55 nC
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 106 W
на замовлення 2663 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 174.30 грн |
10+ | 107.91 грн |
100+ | 73.79 грн |
500+ | 55.53 грн |
1000+ | 54.89 грн |