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AUIRFP4004 AUIRFP4004 Infineon Technologies auirfp4004.pdf?fileId=5546d462533600a4015355b1b7a51450 Description: MOSFET N-CH 40V 195A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 195A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8920 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IR21814STRPBF IR21814STRPBF Infineon Technologies ir2181.pdf?fileId=5546d462533600a4015355c93cdd16ce Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
на замовлення 2839 шт:
термін постачання 21-31 дні (днів)
2+175.13 грн
10+125.33 грн
25+114.49 грн
100+96.26 грн
250+90.93 грн
500+87.71 грн
1000+83.67 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IMZA75R090M1HXKSA1 IMZA75R090M1HXKSA1 Infineon Technologies Infineon-IMZA75R140M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dcbd2f131495c Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tj)
Rds On (Max) @ Id, Vgs: 83mOhm @ 7.4A, 20V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 2.6mA
Supplier Device Package: PG-TO247-4
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 542 pF @ 500 V
на замовлення 218 шт:
термін постачання 21-31 дні (днів)
1+593.46 грн
10+441.44 грн
30+403.42 грн
120+346.73 грн
В кошику  од. на суму  грн.
IMT40R025M2HXTMA1 IMT40R025M2HXTMA1 Infineon Technologies Infineon-IMT40R025M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f84c54cec4d51 Description: SIC-MOS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 32.1mOhm @ 15.7A, 18V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.6mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 200 V
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IMT40R025M2HXTMA1 IMT40R025M2HXTMA1 Infineon Technologies Infineon-IMT40R025M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f84c54cec4d51 Description: SIC-MOS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 32.1mOhm @ 15.7A, 18V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.6mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 200 V
на замовлення 1698 шт:
термін постачання 21-31 дні (днів)
1+642.43 грн
10+423.38 грн
100+336.71 грн
В кошику  од. на суму  грн.
IMZA75R060M1HXKSA1 IMZA75R060M1HXKSA1 Infineon Technologies Infineon-IMZA75R060M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dcbc1100b493c Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 11.1A, 20V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4mA
Supplier Device Package: PG-TO247-4
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 779 pF @ 500 V
на замовлення 238 шт:
термін постачання 21-31 дні (днів)
1+712.15 грн
10+532.64 грн
30+487.98 грн
120+420.54 грн
В кошику  од. на суму  грн.
IMZA75R040M1HXKSA1 IMZA75R040M1HXKSA1 Infineon Technologies Infineon-IMZA75R040M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dc6f5b54e0f1a Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tj)
Rds On (Max) @ Id, Vgs: 37mOhm @ 16.6A, 20V
Power Dissipation (Max): 185W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 6mA
Supplier Device Package: PG-TO247-4
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 500 V
на замовлення 235 шт:
термін постачання 21-31 дні (днів)
1+885.63 грн
10+667.71 грн
30+613.58 грн
120+530.49 грн
В кошику  од. на суму  грн.
IMBG40R011M2HXTMA1 IMBG40R011M2HXTMA1 Infineon Technologies Infineon-IMBG40R011M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f57b81694323d Description: SIC-MOS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 133A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 37.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 429W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: PG-TO263-7-11
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 200 V
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IMBG40R011M2HXTMA1 IMBG40R011M2HXTMA1 Infineon Technologies Infineon-IMBG40R011M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f57b81694323d Description: SIC-MOS
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 133A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 37.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 429W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: PG-TO263-7-11
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 200 V
на замовлення 728 шт:
термін постачання 21-31 дні (днів)
1+1109.73 грн
10+785.13 грн
100+765.82 грн
В кошику  од. на суму  грн.
IMZA75R020M1HXKSA1 IMZA75R020M1HXKSA1 Infineon Technologies Infineon-IMZA75R020M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dc6da53810eef Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tj)
Rds On (Max) @ Id, Vgs: 18mOhm @ 32.5A, 20V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 11.7mA
Supplier Device Package: PG-TO247-4
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2217 pF @ 500 V
на замовлення 237 шт:
термін постачання 21-31 дні (днів)
1+1552.13 грн
10+1191.48 грн
30+1103.00 грн
120+961.02 грн
В кошику  од. на суму  грн.
IMZA75R008M1HXKSA1 IMZA75R008M1HXKSA1 Infineon Technologies Infineon-IMZA75R008M1H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c919c9f9d0191b2c95e1e0eb6 Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 163A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 90.3A, 20V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 32.4mA
Supplier Device Package: PG-TO247-4-U02
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 500 V
Input Capacitance (Ciss) (Max) @ Vds: 6137 pF @ 500 V
на замовлення 240 шт:
термін постачання 21-31 дні (днів)
1+3543.33 грн
10+2791.62 грн
30+2610.21 грн
120+2297.71 грн
В кошику  од. на суму  грн.
EVALXDP710V2TOBO1 EVALXDP710V2TOBO1 Infineon Technologies Infineon-Evaluation_board_XDP710_2307_PL88_2308_013018-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8929aa4d018a3c31c9195aa1 Description: EVAL BOARD FOR XDP710
Packaging: Bulk
Function: PMBus
Type: Interface
Contents: Board(s)
Utilized IC / Part: XDP710
Embedded: No
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+25429.99 грн
В кошику  од. на суму  грн.
ISCH42N04LM7ATMA1 ISCH42N04LM7ATMA1 Infineon Technologies Infineon-ISCH42N04LM7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8fc2dd9c018fdd66f1e27566 Description: ISCH42N04LM7ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Ta), 541A (Tc)
Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 234W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 130µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 20 V
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ISCH42N04LM7ATMA1 ISCH42N04LM7ATMA1 Infineon Technologies Infineon-ISCH42N04LM7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8fc2dd9c018fdd66f1e27566 Description: ISCH42N04LM7ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Ta), 541A (Tc)
Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 234W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 130µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 20 V
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F3L500R12W3H7H20BPSA1 F3L500R12W3H7H20BPSA1 Infineon Technologies Description: IGBT MOD 1200V 315A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.23V @ 15V, 500A
NTC Thermistor: Yes
Current - Collector (Ic) (Max): 315 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 29 µA
Input Capacitance (Cies) @ Vce: 57900 pF @ 25 V
на замовлення 13 шт:
термін постачання 21-31 дні (днів)
1+7095.79 грн
В кошику  од. на суму  грн.
FP150R07N3E4PB11BPSA1 Infineon Technologies Description: LOW POWER ECONO AG-ECONO3-3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 430 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
на замовлення 45 шт:
термін постачання 21-31 дні (днів)
3+8735.90 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
FP150R07N3E4PB11BPSA1 Infineon Technologies Description: LOW POWER ECONO AG-ECONO3-3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 430 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
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FP150R07N3E4BOSA1 Infineon Technologies Infineon-FP150R07N3E4-DS-v02_00-en_de.pdf?fileId=db3a3043324cae8c013262b42be93951 Description: LOW POWER ECONO
Packaging: Bulk
на замовлення 17 шт:
термін постачання 21-31 дні (днів)
2+12072.98 грн
Мінімальне замовлення: 2
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S70KS1281DPBHI020 S70KS1281DPBHI020 Infineon Technologies Infineon-S27KL0641_S27KS0641_S70KL1281_S70KS1281_3.0_V_1.8_V_64_Mb_(8_MB)_128_Mb_(16_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed18c684db5&utm_source=cypress&utm_medium=referral&utm_ca Description: IC PSRAM 128MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 166 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: Parallel
Access Time: 36 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
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S70KS1281DPBHI023 S70KS1281DPBHI023 Infineon Technologies Infineon-S27KL0641_S27KS0641_S70KL1281_S70KS1281_3.0_V_1.8_V_64_Mb_(8_MB)_128_Mb_(16_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed18c684db5&utm_source=cypress&utm_medium=referral&utm_ca Description: IC PSRAM 128MBIT PAR 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 166 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: Parallel
Access Time: 36 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
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IPD020N03LF2SATMA1 IPD020N03LF2SATMA1 Infineon Technologies Infineon-IPD020N03LF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b80943cf2a7a Description: IPD020N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 143A (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 80µA
Supplier Device Package: PG-TO252-3-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
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IPD020N03LF2SATMA1 IPD020N03LF2SATMA1 Infineon Technologies Infineon-IPD020N03LF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b80943cf2a7a Description: IPD020N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 143A (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 80µA
Supplier Device Package: PG-TO252-3-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
на замовлення 1490 шт:
термін постачання 21-31 дні (днів)
3+127.82 грн
10+78.25 грн
100+52.54 грн
500+38.96 грн
1000+35.64 грн
Мінімальне замовлення: 3
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FF55MR12W1M1HB11BPSA1 FF55MR12W1M1HB11BPSA1 Infineon Technologies Infineon-FF55MR12W1M1H_B11-DataSheet-v00_20-EN.pdf?fileId=8ac78c8c8b6555fe018ba8c3b0a3719a Description: EASYDUAL MODULE WITH COOLSIC TRE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Current - Continuous Drain (Id) @ 25°C: 15A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 800V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 5.15V @ 6mA
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
1+2885.13 грн
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CY15V104QN-20LPXI CY15V104QN-20LPXI Infineon Technologies Infineon-CY15B104QN_CY15V104QN_Excelon(TM)_LP_4-Mbit_(512K_X_8)_Serial_(SPI)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7709b704a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integr Description: IC FRAM 4MBIT SPI 20MHZ 8GQFN
Packaging: Tray
Package / Case: 8-UQFN
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-GQFN (3.23x3.28)
Memory Interface: SPI
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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FF750R17ME7DPB11BPSA1 FF750R17ME7DPB11BPSA1 Infineon Technologies FF750R17ME7DPB11BPSA1.pdf Description: FF750R17ME7DPB11BPSA1
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 750A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 650 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 78100 pF @ 25 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+18657.07 грн
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WLC151568LDXSTXUMA1 WLC151568LDXSTXUMA1 Infineon Technologies Infineon-WLC1515_68LDXS-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c88231557018845155de97e1b Description: TYPE-C - EMERGING APP.
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 24V
Applications: Wireless Power Transmitter
Current - Supply: 85mA
Supplier Device Package: 68-QFN (10x10)
Grade: Automotive
Qualification: AEC-Q100
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WLC151568LDXSXQMA1 WLC151568LDXSXQMA1 Infineon Technologies Infineon-WLC1515_68LDXS-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c88231557018845155de97e1b Description: TYPE-C - EMERGING APP.
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 24V
Applications: Wireless Power Transmitter
Current - Supply: 85mA
Supplier Device Package: 68-QFN (10x10)
Grade: Automotive
Qualification: AEC-Q100
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IPP023N03LF2SAKSA1 IPP023N03LF2SAKSA1 Infineon Technologies Infineon-IPP023N03LF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d1019030cc55232b27 Description: MOSFET N-CH 30V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 121A (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V
Power Dissipation (Max): 3.8W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 60µA
Supplier Device Package: PG-TO220-3-U05
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
4+91.30 грн
10+69.70 грн
100+54.29 грн
500+41.48 грн
1000+34.00 грн
Мінімальне замовлення: 4
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CY8CLED16-48PVXI CY8CLED16-48PVXI Infineon Technologies CY8CLED16.pdf Description: IC MCU 8BIT 32KB FLASH 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.25V
Controller Series: CY8CLED
Program Memory Type: FLASH (32kB)
Applications: HB LED Controller
Core Processor: M8C
Supplier Device Package: 48-SSOP
Number of I/O: 44
DigiKey Programmable: Not Verified
на замовлення 147 шт:
термін постачання 21-31 дні (днів)
1+1329.68 грн
10+1016.20 грн
30+938.88 грн
120+816.33 грн
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IDWD40G120C5XKSA2 Infineon Technologies Description: SIC DISCRETE
Packaging: Tube
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AUIRFR4615TRL AUIRFR4615TRL Infineon Technologies IRSDS11820-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 150V 33A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 21A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V
Qualification: AEC-Q101
на замовлення 2995 шт:
термін постачання 21-31 дні (днів)
2+206.67 грн
10+151.06 грн
100+122.38 грн
500+101.85 грн
1000+95.22 грн
Мінімальне замовлення: 2
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FF900R12ME7WBPSA1 FF900R12ME7WBPSA1 Infineon Technologies FF900R12ME7WBPSA1.pdf Description: FF900R12ME7WBPSA1
Packaging: Tray
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REFCAV250KMT7INVTOBO1 REFCAV250KMT7INVTOBO1 Infineon Technologies Infineon-REF-CAV250KMT7INV-UserManual-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b001931abed6c028b5 Description: REFCAV250KMT7INVTOBO1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: FF900R12ME7
Embedded: No
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SHIELDTLE9185V33TOBO1 SHIELDTLE9185V33TOBO1 Infineon Technologies Description: THIS EVALUATION BOARD COMES WITH
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: TLE9185
Platform: Arduino
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+4370.86 грн
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SHIELDTLE9185TOBO1 SHIELDTLE9185TOBO1 Infineon Technologies Description: THIS EVALUATION BOARD COMES WITH
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: TLE9185
Platform: Arduino
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+4370.86 грн
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TLE94112ESSHIELDTOBO1 Infineon Technologies TLE94112ESSHIELDTOBO1.pdf Description: TLE94112ES_SHIELD
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: TLE94112EL
Platform: Arduino
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IMBG65R020M2HXTMA1 IMBG65R020M2HXTMA1 Infineon Technologies infineon-imbg65r020m2h-datasheet-en.pdf Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 46.9A, 18V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.5mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V
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IMBG65R020M2HXTMA1 IMBG65R020M2HXTMA1 Infineon Technologies infineon-imbg65r020m2h-datasheet-en.pdf Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 46.9A, 18V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.5mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V
на замовлення 778 шт:
термін постачання 21-31 дні (днів)
1+978.59 грн
10+660.04 грн
100+583.69 грн
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IPB65R050CFD7AATMA1 IPB65R050CFD7AATMA1 Infineon Technologies Infineon-IPB65R050CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f31815e97c6c Description: AUTOMOTIVE_COOLMOS PG-TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 24.8A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
Qualification: AEC-Q101
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IPB65R050CFD7AATMA1 IPB65R050CFD7AATMA1 Infineon Technologies Infineon-IPB65R050CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f31815e97c6c Description: AUTOMOTIVE_COOLMOS PG-TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 24.8A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1+669.82 грн
10+440.24 грн
100+324.62 грн
500+274.28 грн
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IMBG65R015M2HXTMA1 IMBG65R015M2HXTMA1 Infineon Technologies infineon-imbg65r015m2h-datasheet-en.pdf Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 64.2A, 18V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V
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IMBG65R015M2HXTMA1 IMBG65R015M2HXTMA1 Infineon Technologies infineon-imbg65r015m2h-datasheet-en.pdf Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 64.2A, 18V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V
на замовлення 562 шт:
термін постачання 21-31 дні (днів)
1+1158.70 грн
10+789.04 грн
100+726.17 грн
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IRSM636-015MBTR Infineon Technologies fundamentals-of-power-semiconductors Description: MODULES POWER DRIVERS
Packaging: Tape & Reel (TR)
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SIGC28T65EX1SA1 SIGC28T65EX1SA1 Infineon Technologies Infineon-SIGC28T65E-DS-v02_01-EN.pdf?fileId=db3a30433b92f0e8013b9476ac4b2359 Description: IGBT 3 CHIP 600V
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.77V @ 15V, 50A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
товару немає в наявності
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TLE4971A050T5E0001XUMA1 TLE4971A050T5E0001XUMA1 Infineon Technologies Infineon-TLE4971T-DS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8779172a018799e3198002e7 Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Polarization: Bidirectional
Sensitivity: 24mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 700ns
Sensor Type: Current Sensor
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 50A
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
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TLE4971A075T5E0001XUMA1 TLE4971A075T5E0001XUMA1 Infineon Technologies Infineon-TLE4971T-DS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8779172a018799e3198002e7 Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Polarization: Bidirectional
Sensitivity: 16mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 700ns
Sensor Type: Current Sensor
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 75A
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
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TLE4971A120T5E0001XUMA1 TLE4971A120T5E0001XUMA1 Infineon Technologies Infineon-TLE4971T-DS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8779172a018799e3198002e7 Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Polarization: Bidirectional
Sensitivity: 10mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 700ns
Sensor Type: Current Sensor
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 120A
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
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D1461S45TXPSA1 D1461S45TXPSA1 Infineon Technologies Infineon-D1461S-DS-v01_01-en_de.pdf?fileId=db3a304412b407950112b42fb8fd4d32 Description: DIODE GEN PURP 1720A D10026K-1
Packaging: Tray
Package / Case: DO-200, Variant
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1720A
Supplier Device Package: BG-D10026K-1
Operating Temperature - Junction: -40°C ~ 140°C
Current - Reverse Leakage @ Vr: 200 mA @ 4500 V
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ICE5QR4780BG1XUMA1 ICE5QR4780BG1XUMA1 Infineon Technologies Description: ICE5QR4780BG1XUMA1
Packaging: Tape & Reel (TR)
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ICE5QR4780BG1XUMA1 ICE5QR4780BG1XUMA1 Infineon Technologies Description: ICE5QR4780BG1XUMA1
Packaging: Cut Tape (CT)
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CY7C1370KV25-167AXCT CY7C1370KV25-167AXCT Infineon Technologies download Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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CY7C1370D-167AXCB CY7C1370D-167AXCB Infineon Technologies download Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
на замовлення 1151 шт:
термін постачання 21-31 дні (днів)
7+3472.31 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
CYT4BFBDJDQ0BZSGSXQLA1 Infineon Technologies Description: IC MCU
Packaging: Tray
товару немає в наявності
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SAK-TC275TC-64F200W DC SAK-TC275TC-64F200W DC Infineon Technologies Infineon-TC27xDC-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b4016953972c57046a Description: IC MCU 32BIT 4MB FLASH 176LQFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 424K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 24K x 8
Core Processor: TriCore™
Data Converters: A/D 48x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LQFP-176-22
DigiKey Programmable: Not Verified
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IAUCN08S7L110ATMA1 IAUCN08S7L110ATMA1 Infineon Technologies Description: IAUCN08S7L110ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1056 pF @ 40 V
Qualification: AEC-Q101
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IAUCN08S7L110ATMA1 IAUCN08S7L110ATMA1 Infineon Technologies Description: IAUCN08S7L110ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1056 pF @ 40 V
Qualification: AEC-Q101
на замовлення 4781 шт:
термін постачання 21-31 дні (днів)
4+107.90 грн
10+65.54 грн
100+43.60 грн
500+32.09 грн
1000+29.24 грн
2000+28.03 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IAUCN10S7L180ATMA1 IAUCN10S7L180ATMA1 Infineon Technologies Description: IAUCN10S7L180ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tj)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 868 pF @ 50 V
Qualification: AEC-Q101
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IAUCN10S7L180ATMA1 IAUCN10S7L180ATMA1 Infineon Technologies Description: IAUCN10S7L180ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tj)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 868 pF @ 50 V
Qualification: AEC-Q101
на замовлення 3875 шт:
термін постачання 21-31 дні (днів)
3+112.88 грн
10+68.50 грн
100+45.65 грн
500+33.65 грн
1000+30.70 грн
2000+29.73 грн
Мінімальне замовлення: 3
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CG10055AFT Infineon Technologies Description: IC MEMORY
Packaging: Bulk
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TLE4971A050N5E0002XUMA1 Infineon Technologies Description: CURRENT SENS ATV
Packaging: Tape & Reel (TR)
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AUIRFP4004 auirfp4004.pdf?fileId=5546d462533600a4015355b1b7a51450
AUIRFP4004
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 195A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 195A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8920 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IR21814STRPBF ir2181.pdf?fileId=5546d462533600a4015355c93cdd16ce
IR21814STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
на замовлення 2839 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+175.13 грн
10+125.33 грн
25+114.49 грн
100+96.26 грн
250+90.93 грн
500+87.71 грн
1000+83.67 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IMZA75R090M1HXKSA1 Infineon-IMZA75R140M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dcbd2f131495c
IMZA75R090M1HXKSA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tj)
Rds On (Max) @ Id, Vgs: 83mOhm @ 7.4A, 20V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 2.6mA
Supplier Device Package: PG-TO247-4
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 542 pF @ 500 V
на замовлення 218 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+593.46 грн
10+441.44 грн
30+403.42 грн
120+346.73 грн
В кошику  од. на суму  грн.
IMT40R025M2HXTMA1 Infineon-IMT40R025M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f84c54cec4d51
IMT40R025M2HXTMA1
Виробник: Infineon Technologies
Description: SIC-MOS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 32.1mOhm @ 15.7A, 18V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.6mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 200 V
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IMT40R025M2HXTMA1 Infineon-IMT40R025M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f84c54cec4d51
IMT40R025M2HXTMA1
Виробник: Infineon Technologies
Description: SIC-MOS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 32.1mOhm @ 15.7A, 18V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.6mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 200 V
на замовлення 1698 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+642.43 грн
10+423.38 грн
100+336.71 грн
В кошику  од. на суму  грн.
IMZA75R060M1HXKSA1 Infineon-IMZA75R060M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dcbc1100b493c
IMZA75R060M1HXKSA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 11.1A, 20V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4mA
Supplier Device Package: PG-TO247-4
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 779 pF @ 500 V
на замовлення 238 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+712.15 грн
10+532.64 грн
30+487.98 грн
120+420.54 грн
В кошику  од. на суму  грн.
IMZA75R040M1HXKSA1 Infineon-IMZA75R040M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dc6f5b54e0f1a
IMZA75R040M1HXKSA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tj)
Rds On (Max) @ Id, Vgs: 37mOhm @ 16.6A, 20V
Power Dissipation (Max): 185W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 6mA
Supplier Device Package: PG-TO247-4
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 500 V
на замовлення 235 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+885.63 грн
10+667.71 грн
30+613.58 грн
120+530.49 грн
В кошику  од. на суму  грн.
IMBG40R011M2HXTMA1 Infineon-IMBG40R011M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f57b81694323d
IMBG40R011M2HXTMA1
Виробник: Infineon Technologies
Description: SIC-MOS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 133A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 37.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 429W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: PG-TO263-7-11
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
IMBG40R011M2HXTMA1 Infineon-IMBG40R011M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f57b81694323d
IMBG40R011M2HXTMA1
Виробник: Infineon Technologies
Description: SIC-MOS
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 133A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 37.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 429W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: PG-TO263-7-11
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 200 V
на замовлення 728 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1109.73 грн
10+785.13 грн
100+765.82 грн
В кошику  од. на суму  грн.
IMZA75R020M1HXKSA1 Infineon-IMZA75R020M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dc6da53810eef
IMZA75R020M1HXKSA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tj)
Rds On (Max) @ Id, Vgs: 18mOhm @ 32.5A, 20V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 11.7mA
Supplier Device Package: PG-TO247-4
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2217 pF @ 500 V
на замовлення 237 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1552.13 грн
10+1191.48 грн
30+1103.00 грн
120+961.02 грн
В кошику  од. на суму  грн.
IMZA75R008M1HXKSA1 Infineon-IMZA75R008M1H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c919c9f9d0191b2c95e1e0eb6
IMZA75R008M1HXKSA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 163A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 90.3A, 20V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 32.4mA
Supplier Device Package: PG-TO247-4-U02
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 500 V
Input Capacitance (Ciss) (Max) @ Vds: 6137 pF @ 500 V
на замовлення 240 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3543.33 грн
10+2791.62 грн
30+2610.21 грн
120+2297.71 грн
В кошику  од. на суму  грн.
EVALXDP710V2TOBO1 Infineon-Evaluation_board_XDP710_2307_PL88_2308_013018-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8929aa4d018a3c31c9195aa1
EVALXDP710V2TOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR XDP710
Packaging: Bulk
Function: PMBus
Type: Interface
Contents: Board(s)
Utilized IC / Part: XDP710
Embedded: No
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+25429.99 грн
В кошику  од. на суму  грн.
ISCH42N04LM7ATMA1 Infineon-ISCH42N04LM7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8fc2dd9c018fdd66f1e27566
ISCH42N04LM7ATMA1
Виробник: Infineon Technologies
Description: ISCH42N04LM7ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Ta), 541A (Tc)
Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 234W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 130µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 20 V
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ISCH42N04LM7ATMA1 Infineon-ISCH42N04LM7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8fc2dd9c018fdd66f1e27566
ISCH42N04LM7ATMA1
Виробник: Infineon Technologies
Description: ISCH42N04LM7ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Ta), 541A (Tc)
Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 234W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 130µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 20 V
товару немає в наявності
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F3L500R12W3H7H20BPSA1
F3L500R12W3H7H20BPSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 315A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.23V @ 15V, 500A
NTC Thermistor: Yes
Current - Collector (Ic) (Max): 315 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 29 µA
Input Capacitance (Cies) @ Vce: 57900 pF @ 25 V
на замовлення 13 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+7095.79 грн
В кошику  од. на суму  грн.
FP150R07N3E4PB11BPSA1
Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO3-3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 430 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
на замовлення 45 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+8735.90 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
FP150R07N3E4PB11BPSA1
Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO3-3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 430 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
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FP150R07N3E4BOSA1 Infineon-FP150R07N3E4-DS-v02_00-en_de.pdf?fileId=db3a3043324cae8c013262b42be93951
Виробник: Infineon Technologies
Description: LOW POWER ECONO
Packaging: Bulk
на замовлення 17 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+12072.98 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
S70KS1281DPBHI020 Infineon-S27KL0641_S27KS0641_S70KL1281_S70KS1281_3.0_V_1.8_V_64_Mb_(8_MB)_128_Mb_(16_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed18c684db5&utm_source=cypress&utm_medium=referral&utm_ca
S70KS1281DPBHI020
Виробник: Infineon Technologies
Description: IC PSRAM 128MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 166 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: Parallel
Access Time: 36 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
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S70KS1281DPBHI023 Infineon-S27KL0641_S27KS0641_S70KL1281_S70KS1281_3.0_V_1.8_V_64_Mb_(8_MB)_128_Mb_(16_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed18c684db5&utm_source=cypress&utm_medium=referral&utm_ca
S70KS1281DPBHI023
Виробник: Infineon Technologies
Description: IC PSRAM 128MBIT PAR 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 166 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: Parallel
Access Time: 36 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
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IPD020N03LF2SATMA1 Infineon-IPD020N03LF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b80943cf2a7a
IPD020N03LF2SATMA1
Виробник: Infineon Technologies
Description: IPD020N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 143A (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 80µA
Supplier Device Package: PG-TO252-3-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
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IPD020N03LF2SATMA1 Infineon-IPD020N03LF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b80943cf2a7a
IPD020N03LF2SATMA1
Виробник: Infineon Technologies
Description: IPD020N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 143A (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 80µA
Supplier Device Package: PG-TO252-3-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
на замовлення 1490 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+127.82 грн
10+78.25 грн
100+52.54 грн
500+38.96 грн
1000+35.64 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
FF55MR12W1M1HB11BPSA1 Infineon-FF55MR12W1M1H_B11-DataSheet-v00_20-EN.pdf?fileId=8ac78c8c8b6555fe018ba8c3b0a3719a
FF55MR12W1M1HB11BPSA1
Виробник: Infineon Technologies
Description: EASYDUAL MODULE WITH COOLSIC TRE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Current - Continuous Drain (Id) @ 25°C: 15A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 800V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 5.15V @ 6mA
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2885.13 грн
В кошику  од. на суму  грн.
CY15V104QN-20LPXI Infineon-CY15B104QN_CY15V104QN_Excelon(TM)_LP_4-Mbit_(512K_X_8)_Serial_(SPI)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7709b704a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integr
CY15V104QN-20LPXI
Виробник: Infineon Technologies
Description: IC FRAM 4MBIT SPI 20MHZ 8GQFN
Packaging: Tray
Package / Case: 8-UQFN
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-GQFN (3.23x3.28)
Memory Interface: SPI
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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FF750R17ME7DPB11BPSA1 FF750R17ME7DPB11BPSA1.pdf
FF750R17ME7DPB11BPSA1
Виробник: Infineon Technologies
Description: FF750R17ME7DPB11BPSA1
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 750A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 650 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 78100 pF @ 25 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+18657.07 грн
В кошику  од. на суму  грн.
WLC151568LDXSTXUMA1 Infineon-WLC1515_68LDXS-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c88231557018845155de97e1b
WLC151568LDXSTXUMA1
Виробник: Infineon Technologies
Description: TYPE-C - EMERGING APP.
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 24V
Applications: Wireless Power Transmitter
Current - Supply: 85mA
Supplier Device Package: 68-QFN (10x10)
Grade: Automotive
Qualification: AEC-Q100
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WLC151568LDXSXQMA1 Infineon-WLC1515_68LDXS-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c88231557018845155de97e1b
WLC151568LDXSXQMA1
Виробник: Infineon Technologies
Description: TYPE-C - EMERGING APP.
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 24V
Applications: Wireless Power Transmitter
Current - Supply: 85mA
Supplier Device Package: 68-QFN (10x10)
Grade: Automotive
Qualification: AEC-Q100
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IPP023N03LF2SAKSA1 Infineon-IPP023N03LF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d1019030cc55232b27
IPP023N03LF2SAKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 121A (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V
Power Dissipation (Max): 3.8W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 60µA
Supplier Device Package: PG-TO220-3-U05
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+91.30 грн
10+69.70 грн
100+54.29 грн
500+41.48 грн
1000+34.00 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
CY8CLED16-48PVXI CY8CLED16.pdf
CY8CLED16-48PVXI
Виробник: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.25V
Controller Series: CY8CLED
Program Memory Type: FLASH (32kB)
Applications: HB LED Controller
Core Processor: M8C
Supplier Device Package: 48-SSOP
Number of I/O: 44
DigiKey Programmable: Not Verified
на замовлення 147 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1329.68 грн
10+1016.20 грн
30+938.88 грн
120+816.33 грн
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IDWD40G120C5XKSA2
Виробник: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tube
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AUIRFR4615TRL IRSDS11820-1.pdf?t.download=true&u=5oefqw
AUIRFR4615TRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 33A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 21A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V
Qualification: AEC-Q101
на замовлення 2995 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+206.67 грн
10+151.06 грн
100+122.38 грн
500+101.85 грн
1000+95.22 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FF900R12ME7WBPSA1 FF900R12ME7WBPSA1.pdf
FF900R12ME7WBPSA1
Виробник: Infineon Technologies
Description: FF900R12ME7WBPSA1
Packaging: Tray
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REFCAV250KMT7INVTOBO1 Infineon-REF-CAV250KMT7INV-UserManual-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b001931abed6c028b5
REFCAV250KMT7INVTOBO1
Виробник: Infineon Technologies
Description: REFCAV250KMT7INVTOBO1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: FF900R12ME7
Embedded: No
товару немає в наявності
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SHIELDTLE9185V33TOBO1
SHIELDTLE9185V33TOBO1
Виробник: Infineon Technologies
Description: THIS EVALUATION BOARD COMES WITH
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: TLE9185
Platform: Arduino
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4370.86 грн
В кошику  од. на суму  грн.
SHIELDTLE9185TOBO1
SHIELDTLE9185TOBO1
Виробник: Infineon Technologies
Description: THIS EVALUATION BOARD COMES WITH
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: TLE9185
Platform: Arduino
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4370.86 грн
В кошику  од. на суму  грн.
TLE94112ESSHIELDTOBO1 TLE94112ESSHIELDTOBO1.pdf
Виробник: Infineon Technologies
Description: TLE94112ES_SHIELD
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: TLE94112EL
Platform: Arduino
товару немає в наявності
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IMBG65R020M2HXTMA1 infineon-imbg65r020m2h-datasheet-en.pdf
IMBG65R020M2HXTMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 46.9A, 18V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.5mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V
товару немає в наявності
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IMBG65R020M2HXTMA1 infineon-imbg65r020m2h-datasheet-en.pdf
IMBG65R020M2HXTMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 46.9A, 18V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.5mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V
на замовлення 778 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+978.59 грн
10+660.04 грн
100+583.69 грн
В кошику  од. на суму  грн.
IPB65R050CFD7AATMA1 Infineon-IPB65R050CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f31815e97c6c
IPB65R050CFD7AATMA1
Виробник: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS PG-TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 24.8A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
Qualification: AEC-Q101
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IPB65R050CFD7AATMA1 Infineon-IPB65R050CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f31815e97c6c
IPB65R050CFD7AATMA1
Виробник: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS PG-TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 24.8A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+669.82 грн
10+440.24 грн
100+324.62 грн
500+274.28 грн
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IMBG65R015M2HXTMA1 infineon-imbg65r015m2h-datasheet-en.pdf
IMBG65R015M2HXTMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 64.2A, 18V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V
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IMBG65R015M2HXTMA1 infineon-imbg65r015m2h-datasheet-en.pdf
IMBG65R015M2HXTMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 64.2A, 18V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V
на замовлення 562 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1158.70 грн
10+789.04 грн
100+726.17 грн
В кошику  од. на суму  грн.
IRSM636-015MBTR fundamentals-of-power-semiconductors
Виробник: Infineon Technologies
Description: MODULES POWER DRIVERS
Packaging: Tape & Reel (TR)
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SIGC28T65EX1SA1 Infineon-SIGC28T65E-DS-v02_01-EN.pdf?fileId=db3a30433b92f0e8013b9476ac4b2359
SIGC28T65EX1SA1
Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.77V @ 15V, 50A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
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TLE4971A050T5E0001XUMA1 Infineon-TLE4971T-DS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8779172a018799e3198002e7
TLE4971A050T5E0001XUMA1
Виробник: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Polarization: Bidirectional
Sensitivity: 24mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 700ns
Sensor Type: Current Sensor
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 50A
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
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TLE4971A075T5E0001XUMA1 Infineon-TLE4971T-DS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8779172a018799e3198002e7
TLE4971A075T5E0001XUMA1
Виробник: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Polarization: Bidirectional
Sensitivity: 16mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 700ns
Sensor Type: Current Sensor
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 75A
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
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TLE4971A120T5E0001XUMA1 Infineon-TLE4971T-DS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8779172a018799e3198002e7
TLE4971A120T5E0001XUMA1
Виробник: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Polarization: Bidirectional
Sensitivity: 10mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 700ns
Sensor Type: Current Sensor
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 120A
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
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D1461S45TXPSA1 Infineon-D1461S-DS-v01_01-en_de.pdf?fileId=db3a304412b407950112b42fb8fd4d32
D1461S45TXPSA1
Виробник: Infineon Technologies
Description: DIODE GEN PURP 1720A D10026K-1
Packaging: Tray
Package / Case: DO-200, Variant
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1720A
Supplier Device Package: BG-D10026K-1
Operating Temperature - Junction: -40°C ~ 140°C
Current - Reverse Leakage @ Vr: 200 mA @ 4500 V
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ICE5QR4780BG1XUMA1
ICE5QR4780BG1XUMA1
Виробник: Infineon Technologies
Description: ICE5QR4780BG1XUMA1
Packaging: Tape & Reel (TR)
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ICE5QR4780BG1XUMA1
ICE5QR4780BG1XUMA1
Виробник: Infineon Technologies
Description: ICE5QR4780BG1XUMA1
Packaging: Cut Tape (CT)
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CY7C1370KV25-167AXCT download
CY7C1370KV25-167AXCT
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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CY7C1370D-167AXCB download
CY7C1370D-167AXCB
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
на замовлення 1151 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+3472.31 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
CYT4BFBDJDQ0BZSGSXQLA1
Виробник: Infineon Technologies
Description: IC MCU
Packaging: Tray
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SAK-TC275TC-64F200W DC Infineon-TC27xDC-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b4016953972c57046a
SAK-TC275TC-64F200W DC
Виробник: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 176LQFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 424K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 24K x 8
Core Processor: TriCore™
Data Converters: A/D 48x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LQFP-176-22
DigiKey Programmable: Not Verified
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IAUCN08S7L110ATMA1
IAUCN08S7L110ATMA1
Виробник: Infineon Technologies
Description: IAUCN08S7L110ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1056 pF @ 40 V
Qualification: AEC-Q101
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IAUCN08S7L110ATMA1
IAUCN08S7L110ATMA1
Виробник: Infineon Technologies
Description: IAUCN08S7L110ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1056 pF @ 40 V
Qualification: AEC-Q101
на замовлення 4781 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+107.90 грн
10+65.54 грн
100+43.60 грн
500+32.09 грн
1000+29.24 грн
2000+28.03 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IAUCN10S7L180ATMA1
IAUCN10S7L180ATMA1
Виробник: Infineon Technologies
Description: IAUCN10S7L180ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tj)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 868 pF @ 50 V
Qualification: AEC-Q101
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IAUCN10S7L180ATMA1
IAUCN10S7L180ATMA1
Виробник: Infineon Technologies
Description: IAUCN10S7L180ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tj)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 868 pF @ 50 V
Qualification: AEC-Q101
на замовлення 3875 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+112.88 грн
10+68.50 грн
100+45.65 грн
500+33.65 грн
1000+30.70 грн
2000+29.73 грн
Мінімальне замовлення: 3
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CG10055AFT
Виробник: Infineon Technologies
Description: IC MEMORY
Packaging: Bulk
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TLE4971A050N5E0002XUMA1
Виробник: Infineon Technologies
Description: CURRENT SENS ATV
Packaging: Tape & Reel (TR)
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