Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (123059) > Сторінка 746 з 2051
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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CY7C1565KV18-550BZXC | Infineon Technologies |
Description: IC SRAM 72MBIT PARALLEL 165FBGAPackaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 72Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II+ Clock Frequency: 550 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Memory Organization: 2M x 36 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 272 шт В кошику од. на суму грн. | ||||||||||||||||
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CY14B256KA-SP25XIT | Infineon Technologies |
Description: IC NVSRAM 256KBIT PAR 48SSOPMemory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 256Kbit Mounting Type: Surface Mount Package / Case: 48-BSSOP (0.295", 7.50mm Width) Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified Memory Organization: 32K x 8 Access Time: 25 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 25ns Supplier Device Package: 48-SSOP |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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S25FL128LAGNFB013 | Infineon Technologies |
Description: IC FLASH 128MBIT SPI/QUAD 8WSONMemory Type: Non-Volatile Memory Size: 128Mbit Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Packaging: Tape & Reel (TR) Qualification: AEC-Q100 DigiKey Programmable: Not Verified Memory Organization: 16M x 8 Memory Interface: SPI - Quad I/O, QPI Grade: Automotive Supplier Device Package: 8-WSON (5x6) Memory Format: FLASH Clock Frequency: 133 MHz Technology: FLASH - NOR Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||
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IRFP4868PBF | Infineon Technologies |
Description: IRFP4868 - 12V-300V N-CHANNEL POPackaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 42A, 10V Power Dissipation (Max): 517W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247AC Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10774 pF @ 50 V |
на замовлення 133 шт: термін постачання 21-31 дні (днів) |
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| T1040N20TOFVTXPSA1 | Infineon Technologies |
Description: SCR MODULE 2.2KV 2200A TO-200ACPackaging: Tray Package / Case: TO-200AC Mounting Type: Clamp On Operating Temperature: -40°C ~ 125°C Structure: Single Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 21500A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 1040 A Voltage - Gate Trigger (Vgt) (Max): 2.2 V Current - On State (It (RMS)) (Max): 2200 A Voltage - Off State: 2.2 kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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D2450N07TXPSA1 | Infineon Technologies |
Description: DIODE STANDARD 700V 2450APackaging: Tray Package / Case: DO-200AB, B-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 2450A Operating Temperature - Junction: -40°C ~ 180°C Voltage - DC Reverse (Vr) (Max): 700 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 2000 A Current - Reverse Leakage @ Vr: 50 mA @ 700 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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6EDL04N065PRXUMA1 | Infineon Technologies |
Description: 6EDL04N065PRXUMA1Packaging: Tape & Reel (TR) Package / Case: 25-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 10V ~ 25V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 650 V Supplier Device Package: PG-TSSOP-25 Rise / Fall Time (Typ): 60ns, 26ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: MOSFET (N-Channel, P-Channel) Logic Voltage - VIL, VIH: 1.1V, 1.7V Current - Peak Output (Source, Sink): 165mA, 375mA |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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6EDL04N065PRXUMA1 | Infineon Technologies |
Description: 6EDL04N065PRXUMA1Packaging: Cut Tape (CT) Package / Case: 25-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 10V ~ 25V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 650 V Supplier Device Package: PG-TSSOP-25 Rise / Fall Time (Typ): 60ns, 26ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: MOSFET (N-Channel, P-Channel) Logic Voltage - VIL, VIH: 1.1V, 1.7V Current - Peak Output (Source, Sink): 165mA, 375mA |
на замовлення 2975 шт: термін постачання 21-31 дні (днів) |
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1EDI3035ASXUMA1 | Infineon Technologies |
Description: 1EDI3035ASXUMA1Packaging: Tape & Reel (TR) Package / Case: 20-BFSOP (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C Current - Peak Output: 20A Technology: Magnetic Coupling Current - Output High, Low: 20A, 20A Voltage - Isolation: 5700Vrms Approval Agency: IEC/EN/DIN, UL, VDE Supplier Device Package: PG-DSO-20-91 Rise / Fall Time (Typ): 35ns, 45ns (Max) Common Mode Transient Immunity (Min): 150kV/µs Propagation Delay tpLH / tpHL (Max): 90ns, 90ns Grade: Automotive Number of Channels: 1 Voltage - Output Supply: 3V ~ 5.5V, 13.5V ~ 20V Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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1EDI3035ASXUMA1 | Infineon Technologies |
Description: 1EDI3035ASXUMA1Packaging: Cut Tape (CT) Package / Case: 20-BFSOP (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C Current - Peak Output: 20A Technology: Magnetic Coupling Current - Output High, Low: 20A, 20A Voltage - Isolation: 5700Vrms Approval Agency: IEC/EN/DIN, UL, VDE Supplier Device Package: PG-DSO-20-91 Rise / Fall Time (Typ): 35ns, 45ns (Max) Common Mode Transient Immunity (Min): 150kV/µs Propagation Delay tpLH / tpHL (Max): 90ns, 90ns Grade: Automotive Number of Channels: 1 Voltage - Output Supply: 3V ~ 5.5V, 13.5V ~ 20V Qualification: AEC-Q100 |
на замовлення 432 шт: термін постачання 21-31 дні (днів) |
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| IDDD06G65C6XTMA1 | Infineon Technologies |
Description: DIODE SIC 650V 18A PGHDSOP101Packaging: Bulk Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 302pF @ 1V, 1MHz Current - Average Rectified (Io): 18A Supplier Device Package: PG-HDSOP-10-1 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 20 µA @ 420 V |
на замовлення 543 шт: термін постачання 21-31 дні (днів) |
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IDDD12G65C6XTMA1 | Infineon Technologies |
Description: DIODE SIC 650V 34A PGHDSOP101Packaging: Bulk Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 594pF @ 1V, 1MHz Current - Average Rectified (Io): 34A Supplier Device Package: PG-HDSOP-10-1 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 40 µA @ 420 V |
на замовлення 5200 шт: термін постачання 21-31 дні (днів) |
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AUIRF1010Z | Infineon Technologies |
Description: MOSFET N-CH 55V 75A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 75A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Grade: Automotive Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BC847CE6433HTMA1 | Infineon Technologies |
Description: TRANS NPN 45V 0.1A PG-SOT23Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 330 mW |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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| SIDC56D60E6X1SA1 | Infineon Technologies |
Description: DIODE STD 600V 150A SAWN ON FOILCurrent - Reverse Leakage @ Vr: 27 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sawn on foil Current - Average Rectified (Io): 150A Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: Die Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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IQFH47N04NM6ATMA1 | Infineon Technologies |
Description: TRENCH <= 40VInput Capacitance (Ciss) (Max) @ Vds: 13300 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 221 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: PG-TSON-12-1 Vgs(th) (Max) @ Id: 2.8V @ 1.05mA Power Dissipation (Max): 3W (Ta), 250W (Tc) Rds On (Max) @ Id, Vgs: 0.47mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 507A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 12-PowerTDFN Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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IQFH47N04NM6ATMA1 | Infineon Technologies |
Description: TRENCH <= 40VDrive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: PG-TSON-12-1 Vgs(th) (Max) @ Id: 2.8V @ 1.05mA Power Dissipation (Max): 3W (Ta), 250W (Tc) Rds On (Max) @ Id, Vgs: 0.47mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 507A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 12-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 13300 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 221 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| IGB110S10S1XTMA1 | Infineon Technologies |
Description: MV GAN DISCRETES Packaging: Tape & Reel (TR) Package / Case: 4-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 23A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 5V Power Dissipation (Max): 2.5W (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 3mA Supplier Device Package: PG-TSON-4-2 Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±6.5V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 50 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||||
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AUIRLS3034 | Infineon Technologies |
Description: MOSFET N-CH 40V 195A D2PAKPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 195A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: D2PAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 10315 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ISC800P06LMATMA1 | Infineon Technologies |
Description: TRENCH 40<-<100VPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 19.6A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 16A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2V @ 724µA Supplier Device Package: PG-TDSON-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 30 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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ISC800P06LMATMA1 | Infineon Technologies |
Description: TRENCH 40<-<100VPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 19.6A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 16A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2V @ 724µA Supplier Device Package: PG-TDSON-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 30 V |
на замовлення 4594 шт: термін постачання 21-31 дні (днів) |
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SAF-XE164H-96F66L AC | Infineon Technologies |
Description: IC MCU 16BIT 768KB FLASH 100LQFPDigiKey Programmable: Not Verified Number of I/O: 75 Supplier Device Package: PG-LQFP-100-3 Peripherals: I2S, POR, PWM, WDT Connectivity: EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Core Size: 16-Bit Data Converters: A/D 16x10b Core Processor: C166SV2 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 82K x 8 Program Memory Size: 768KB (768K x 8) Speed: 66MHz Mounting Type: Surface Mount Package / Case: 100-LQFP Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1400 шт В кошику од. на суму грн. | ||||||||||||||||
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XE164K96F66LACFXUMA1 | Infineon Technologies |
Description: IC MCU 16BIT 768KB FLASH 100LQFPDigiKey Programmable: Not Verified Number of I/O: 75 Supplier Device Package: PG-LQFP-100-3 Peripherals: I2S, POR, PWM, WDT Connectivity: EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Core Size: 16-Bit Data Converters: A/D 11x10b Core Processor: C166SV2 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 82K x 8 Program Memory Size: 768KB (768K x 8) Speed: 66MHz Mounting Type: Surface Mount Package / Case: 100-LQFP Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1400 шт В кошику од. на суму грн. | ||||||||||||||||
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XE164K96F66LACFXQMA1 | Infineon Technologies |
Description: IC MCU 16BIT 768KB FLASH 100LQFPRAM Size: 82K x 8 Program Memory Size: 768KB (768K x 8) Speed: 66MHz Mounting Type: Surface Mount Package / Case: 100-LQFP Exposed Pad Packaging: Tray DigiKey Programmable: Not Verified Number of I/O: 75 Supplier Device Package: PG-LQFP-100-3 Peripherals: I2S, POR, PWM, WDT Connectivity: EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Core Size: 16-Bit Data Converters: A/D 11x10b Core Processor: C166SV2 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) |
товару немає в наявності |
Мінімальне замовлення: 540 шт В кошику од. на суму грн. | ||||||||||||||||
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XC228796F66LACKXUMA1 | Infineon Technologies |
Description: IC MCU 16/32B 768KB FLSH 144LQFPCore Processor: C166SV2 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 82K x 8 Program Memory Size: 768KB (768K x 8) Speed: 66MHz Mounting Type: Surface Mount Package / Case: 144-LQFP Exposed Pad Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified Number of I/O: 118 Supplier Device Package: PG-LQFP-144-4 Peripherals: DMA, I2S, POR, PWM, WDT Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Core Size: 16/32-Bit Data Converters: A/D 24x10b |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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XE164G96F66LACFXQMA1 | Infineon Technologies |
Description: IC MCU 16BIT 768KB FLASH 100LQFPCore Size: 16-Bit Data Converters: A/D 11x10b Core Processor: C166SV2 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 82K x 8 Program Memory Size: 768KB (768K x 8) Speed: 66MHz Mounting Type: Surface Mount Package / Case: 100-LQFP Exposed Pad Packaging: Tray DigiKey Programmable: Not Verified Number of I/O: 75 Supplier Device Package: PG-LQFP-100-3 Peripherals: I2S, POR, PWM, WDT Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V |
товару немає в наявності |
Мінімальне замовлення: 540 шт В кошику од. на суму грн. | ||||||||||||||||
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XE164H96F66LACFXQMA1 | Infineon Technologies |
Description: IC MCU 16BIT 768KB FLASH 100LQFPDigiKey Programmable: Not Verified Number of I/O: 75 Supplier Device Package: PG-LQFP-100-8 Peripherals: I2S, POR, PWM, WDT Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Core Size: 16-Bit Data Converters: A/D 16x10b Core Processor: C166SV2 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 82K x 8 Program Memory Size: 768KB (768K x 8) Speed: 66MHz Mounting Type: Surface Mount Package / Case: 100-LQFP Exposed Pad Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 540 шт В кошику од. на суму грн. | ||||||||||||||||
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CY9AF344LAQN-G-AVE2 | Infineon Technologies |
Description: IC MCU 32BIT 288KB 64VFQFN Packaging: Tray Package / Case: 64-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 288KB (288K x 8) RAM Size: 32K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 12x12b SAR Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V Connectivity: CSIO, I2C, UART/USART, USB Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 64-QFN (9x9) Number of I/O: 51 |
товару немає в наявності |
Мінімальне замовлення: 2600 шт В кошику од. на суму грн. | ||||||||||||||||
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AUIRG4PC40S-E | Infineon Technologies |
Description: IGBT 600V 60A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 31A Supplier Device Package: PG-TO247-3 Td (on/off) @ 25°C: 22ns/650ns Switching Energy: 450µJ (on), 6.5mJ (off) Test Condition: 480V, 31A, 10Ohm, 15V Gate Charge: 150 nC Grade: Automotive Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 160 W Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 400 шт В кошику од. на суму грн. | ||||||||||||||||
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1EDI3025ASXUMA1 | Infineon Technologies |
Description: BTM9011EPXUMA1Packaging: Tape & Reel (TR) Package / Case: 20-BFSOP (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C Current - Peak Output: 20A Technology: Magnetic Coupling Current - Output High, Low: 20A, 20A Voltage - Isolation: 5700Vrms Approval Agency: IEC/EN/DIN, UL, VDE Supplier Device Package: PG-DSO-20-91 Rise / Fall Time (Typ): 35ns, 45ns (Max) Common Mode Transient Immunity (Min): 150kV/µs Propagation Delay tpLH / tpHL (Max): 90ns, 90ns Grade: Automotive Number of Channels: 1 Voltage - Output Supply: 3V ~ 5.5V, 13.5V ~ 17V Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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1EDI3025ASXUMA1 | Infineon Technologies |
Description: BTM9011EPXUMA1Packaging: Cut Tape (CT) Package / Case: 20-BFSOP (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C Current - Peak Output: 20A Technology: Magnetic Coupling Current - Output High, Low: 20A, 20A Voltage - Isolation: 5700Vrms Approval Agency: IEC/EN/DIN, UL, VDE Supplier Device Package: PG-DSO-20-91 Rise / Fall Time (Typ): 35ns, 45ns (Max) Common Mode Transient Immunity (Min): 150kV/µs Propagation Delay tpLH / tpHL (Max): 90ns, 90ns Grade: Automotive Number of Channels: 1 Voltage - Output Supply: 3V ~ 5.5V, 13.5V ~ 17V Qualification: AEC-Q100 |
на замовлення 424 шт: термін постачання 21-31 дні (днів) |
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S26KL512SDABHB030 | Infineon Technologies |
Description: IC FLASH 256MBIT HYPERBUS 24FBGAPackaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 24-FBGA (6x8) Grade: Automotive Memory Interface: HyperBus Access Time: 96 ns Memory Organization: 64M x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 338 шт В кошику од. на суму грн. | ||||||||||||||||
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4DIR0400HXUMA1 | Infineon Technologies |
Description: DGTL ISOLTR 5.7KV 4CH SPI 16SOICPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Type: SPI Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 6.5V Data Rate: 40Mbps Technology: Magnetic Coupling Voltage - Isolation: 5700Vrms Inputs - Side 1/Side 2: 4/0 Supplier Device Package: PG-DSO-16-46 Rise / Fall Time (Typ): 4ns, 4ns (Max) Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 26ns, 26ns (Typ) Isolated Power: No Channel Type: Unidirectional Pulse Width Distortion (Max): 3ns Number of Channels: 4 |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||||
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4DIR0400HXUMA1 | Infineon Technologies |
Description: DGTL ISOLTR 5.7KV 4CH SPI 16SOICPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Type: SPI Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 6.5V Data Rate: 40Mbps Technology: Magnetic Coupling Voltage - Isolation: 5700Vrms Inputs - Side 1/Side 2: 4/0 Supplier Device Package: PG-DSO-16-46 Rise / Fall Time (Typ): 4ns, 4ns (Max) Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 26ns, 26ns (Typ) Isolated Power: No Channel Type: Unidirectional Pulse Width Distortion (Max): 3ns Number of Channels: 4 |
на замовлення 1426 шт: термін постачання 21-31 дні (днів) |
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AUIRF1018ES | Infineon Technologies |
Description: MOSFET N-CH 60V 79A D2PAKPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: D2PAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 50 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRSM836-015MA | Infineon Technologies |
Description: IC HALF BRIDGE DRIVER 1A 36QFNFeatures: Bootstrap Circuit Packaging: Bulk Package / Case: 36-PowerVQFN Mounting Type: Surface Mount Interface: Logic Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (3) Voltage - Supply: 13.5V ~ 16.5V Rds On (Typ): 4.8Ohm Applications: AC Motors Current - Output / Channel: 1A Current - Peak Output: 7A Technology: UMOS Voltage - Load: 400V (Max) Supplier Device Package: 36-PQFN (12x12) Fault Protection: UVLO Load Type: Inductive |
на замовлення 736 шт: термін постачання 21-31 дні (днів) |
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IGLD65R055D2AUMA1 | Infineon Technologies |
Description: GANFET N-CH 650V 20A 8LDFNPackaging: Tape & Reel (TR) Package / Case: 8-LDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 7.9A Power Dissipation (Max): 91W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Supplier Device Package: PG-LSON-8-1 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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IGLD65R055D2AUMA1 | Infineon Technologies |
Description: GANFET N-CH 650V 20A 8LDFNPackaging: Cut Tape (CT) Package / Case: 8-LDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 7.9A Power Dissipation (Max): 91W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Supplier Device Package: PG-LSON-8-1 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V |
на замовлення 2565 шт: термін постачання 21-31 дні (днів) |
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| C2DBYY001831 | Infineon Technologies |
Description: IC MCU Packaging: Bulk DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FP20R06W1E3B3BPSA1 | Infineon Technologies |
Description: LOW POWER EASY Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A NTC Thermistor: Yes Supplier Device Package: AG-EASY1B IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 27 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 94 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 1100 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 24 шт В кошику од. на суму грн. | |||||||||||||||||
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IMT40R045M2HXTMA1 | Infineon Technologies |
Description: SIC-MOSPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 43A (Tc) Rds On (Max) @ Id, Vgs: 56.2mOhm @ 8.9A, 18V Power Dissipation (Max): 3.8W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 3.2mA Supplier Device Package: PG-HSOF-8-2 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 200 V |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
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IMT40R045M2HXTMA1 | Infineon Technologies |
Description: SIC-MOSPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 43A (Tc) Rds On (Max) @ Id, Vgs: 56.2mOhm @ 8.9A, 18V Power Dissipation (Max): 3.8W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 3.2mA Supplier Device Package: PG-HSOF-8-2 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 200 V |
на замовлення 1890 шт: термін постачання 21-31 дні (днів) |
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| IR38060MGM09TRP | Infineon Technologies |
Description: IC REG DC-DC 35IQFNPackaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||||||||
| IR38060MGM10TRP | Infineon Technologies |
Description: IC REG DC-DC 35IQFNPackaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||||||||
| IR38060MGM12TRP | Infineon Technologies |
Description: IC REG DC-DC 35IQFNPackaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||||||||
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IR38060MGM18TRPXUMA1 | Infineon Technologies |
Description: IC REG BUCK ADJ 6A 26PQFNPackaging: Tape & Reel (TR) Package / Case: 26-PowerTFQFN Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 6A Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Frequency - Switching: Up to 1.5MHz Voltage - Input (Max): 16V Topology: Buck Supplier Device Package: 26-PQFN (5x6) Synchronous Rectifier: Yes Voltage - Output (Max): 14V Voltage - Input (Min): 1.2V Voltage - Output (Min/Fixed): 0.5V |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||
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IDK05G65C5XTMA1 | Infineon Technologies |
Description: DIODE SIL CARB 650V 5A PGTO2632Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 160pF @ 1V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: PG-TO263-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A Current - Reverse Leakage @ Vr: 830 µA @ 650 V |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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IDK05G65C5XTMA2 | Infineon Technologies |
Description: DIODE SIL CARB 650V 5A PGTO2632Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 160pF @ 1V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: PG-TO263-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A Current - Reverse Leakage @ Vr: 830 µA @ 650 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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CY7C4215V-15ASXC | Infineon Technologies |
Description: IC FIFO SYNC 512X18 11NS 64TQFPRetransmit Capability: Yes Programmable Flags Support: Yes Expansion Type: Depth, Width Bus Directional: Uni-Directional Supplier Device Package: 64-TQFP (14x14) Current - Supply (Max): 30mA Access Time: 11ns Data Rate: 66.7MHz Operating Temperature: 0°C ~ 70°C Memory Size: 9K (512 x 18) Function: Synchronous Mounting Type: Surface Mount Package / Case: 64-LQFP Packaging: Tray DigiKey Programmable: Not Verified Voltage - Supply: 3 V ~ 3.6 V FWFT Support: No |
товару немає в наявності |
Мінімальне замовлення: 160 шт В кошику од. на суму грн. | ||||||||||||||||
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CY7C421-10JXC | Infineon Technologies |
Description: IC FIFO ASYNC 512X9 10NS 32PLCCDigiKey Programmable: Not Verified Voltage - Supply: 4.5 V ~ 5.5 V FWFT Support: No Retransmit Capability: Yes Programmable Flags Support: No Expansion Type: Depth, Width Bus Directional: Uni-Directional Supplier Device Package: 32-PLCC (11.43x13.97) Current - Supply (Max): 85mA Access Time: 10ns Data Rate: 50MHz Operating Temperature: 0°C ~ 70°C Memory Size: 4.5K (512 x 9) Function: Asynchronous Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY7C4211-15JXC | Infineon Technologies |
Description: IC FIFO SYNC 512X9 10NS 32PLCCPackaging: Tube Package / Case: 32-LCC (J-Lead) Mounting Type: Surface Mount Function: Synchronous Memory Size: 4.5K (512 x 9) Operating Temperature: 0°C ~ 70°C Data Rate: 66.7MHz Access Time: 10ns Current - Supply (Max): 35mA Supplier Device Package: 32-PLCC (11.43x13.97) Bus Directional: Uni-Directional Expansion Type: Depth, Width Programmable Flags Support: Yes Retransmit Capability: No FWFT Support: No Voltage - Supply: 4.5 V ~ 5.5 V DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLE4972EVALVERBARTOBO1 | Infineon Technologies |
Description: TLE4972 EVAL VER BAR Sensing Range: 842A Embedded: No Utilized IC / Part: TLE4972 Sensor Type: Current Sensor Voltage - Supply: 3.1V ~ 3.3V Contents: Board(s) Interface: Analog Packaging: Bulk |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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TLE4973EVALVERBARTOBO1 | Infineon Technologies |
Description: TLE4973 EVAL VER BAR Packaging: Bulk Interface: Analog Contents: Board(s) Voltage - Supply: 4.5V ~ 5.5V Sensor Type: Current Sensor Utilized IC / Part: TLE4973 Embedded: No Sensing Range: 920A |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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D1821SH45TS05XOSA1 | Infineon Technologies |
Description: DIODE STD 4500V 1710A BGD10026K1Packaging: Bulk Package / Case: DO-200, Variant Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1710A Supplier Device Package: BG-D10026K-1 Voltage - DC Reverse (Vr) (Max): 4500 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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EVALISSI20R02HTSTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR ISSI20R02H Embedded: No Primary Attributes: 2.5V ~ 3.5V Input Voltage Utilized IC / Part: iSSI20R02H Contents: Board(s) Type: Interface Function: Isolator Packaging: Box |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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EVALISSI20R02HCSTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR ISSI20R02HEmbedded: No Primary Attributes: 2.5V ~ 3.5V Input Voltage Utilized IC / Part: iSSI20R02H Contents: Board(s) Type: Interface Function: Isolator Packaging: Box |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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EVALISSI20R11HTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR ISSI20R11H Embedded: No Primary Attributes: 2.5V ~ 3.5V Input Voltage Utilized IC / Part: iSSI20R11H Contents: Board(s) Type: Interface Function: Isolator Packaging: Box |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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EVALISSI20R03HTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR ISSI20R03H Embedded: No Primary Attributes: 2.5V ~ 3.5V Input Voltage Utilized IC / Part: iSSI20R03H Contents: Board(s) Type: Interface Function: Isolator Packaging: Box |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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BCR402W12VLEDBOARDTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR BCR402WPackaging: Box Voltage - Input: 12V Contents: Board(s) Current - Output / Channel: 20mA Utilized IC / Part: BCR402W Outputs and Type: 1 Non-Isolated Output |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BCR402W24VLEDBOARDTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR BCR402WPackaging: Box Voltage - Input: 24V Contents: Board(s) Current - Output / Channel: 20mA Utilized IC / Part: BCR402W Outputs and Type: 1 Non-Isolated Output |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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| CY7C1565KV18-550BZXC |
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Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 272 шт
В кошику
од. на суму грн.
| CY14B256KA-SP25XIT |
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Виробник: Infineon Technologies
Description: IC NVSRAM 256KBIT PAR 48SSOP
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 32K x 8
Access Time: 25 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 25ns
Supplier Device Package: 48-SSOP
Description: IC NVSRAM 256KBIT PAR 48SSOP
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 32K x 8
Access Time: 25 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 25ns
Supplier Device Package: 48-SSOP
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| S25FL128LAGNFB013 |
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Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Memory Type: Non-Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 16M x 8
Memory Interface: SPI - Quad I/O, QPI
Grade: Automotive
Supplier Device Package: 8-WSON (5x6)
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Memory Type: Non-Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 16M x 8
Memory Interface: SPI - Quad I/O, QPI
Grade: Automotive
Supplier Device Package: 8-WSON (5x6)
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| IRFP4868PBF |
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Виробник: Infineon Technologies
Description: IRFP4868 - 12V-300V N-CHANNEL PO
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 42A, 10V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10774 pF @ 50 V
Description: IRFP4868 - 12V-300V N-CHANNEL PO
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 42A, 10V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10774 pF @ 50 V
на замовлення 133 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 133+ | 203.71 грн |
| T1040N20TOFVTXPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 2.2KV 2200A TO-200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 21500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1040 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 2200 A
Voltage - Off State: 2.2 kV
Description: SCR MODULE 2.2KV 2200A TO-200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 21500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1040 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 2200 A
Voltage - Off State: 2.2 kV
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| D2450N07TXPSA1 |
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Виробник: Infineon Technologies
Description: DIODE STANDARD 700V 2450A
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2450A
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 2000 A
Current - Reverse Leakage @ Vr: 50 mA @ 700 V
Description: DIODE STANDARD 700V 2450A
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2450A
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 2000 A
Current - Reverse Leakage @ Vr: 50 mA @ 700 V
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| 6EDL04N065PRXUMA1 |
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Виробник: Infineon Technologies
Description: 6EDL04N065PRXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 25-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 25V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-TSSOP-25
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
Description: 6EDL04N065PRXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 25-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 25V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-TSSOP-25
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
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Мінімальне замовлення: 3000 шт
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| 6EDL04N065PRXUMA1 |
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Виробник: Infineon Technologies
Description: 6EDL04N065PRXUMA1
Packaging: Cut Tape (CT)
Package / Case: 25-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 25V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-TSSOP-25
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
Description: 6EDL04N065PRXUMA1
Packaging: Cut Tape (CT)
Package / Case: 25-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 25V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-TSSOP-25
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
на замовлення 2975 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 164.28 грн |
| 5+ | 140.73 грн |
| 10+ | 134.24 грн |
| 25+ | 118.74 грн |
| 50+ | 113.77 грн |
| 100+ | 109.21 грн |
| 500+ | 98.41 грн |
| 1000+ | 95.06 грн |
| 1EDI3035ASXUMA1 |
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Виробник: Infineon Technologies
Description: 1EDI3035ASXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Magnetic Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 5700Vrms
Approval Agency: IEC/EN/DIN, UL, VDE
Supplier Device Package: PG-DSO-20-91
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 3V ~ 5.5V, 13.5V ~ 20V
Qualification: AEC-Q100
Description: 1EDI3035ASXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Magnetic Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 5700Vrms
Approval Agency: IEC/EN/DIN, UL, VDE
Supplier Device Package: PG-DSO-20-91
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 3V ~ 5.5V, 13.5V ~ 20V
Qualification: AEC-Q100
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Мінімальне замовлення: 1000 шт
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| 1EDI3035ASXUMA1 |
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Виробник: Infineon Technologies
Description: 1EDI3035ASXUMA1
Packaging: Cut Tape (CT)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Magnetic Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 5700Vrms
Approval Agency: IEC/EN/DIN, UL, VDE
Supplier Device Package: PG-DSO-20-91
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 3V ~ 5.5V, 13.5V ~ 20V
Qualification: AEC-Q100
Description: 1EDI3035ASXUMA1
Packaging: Cut Tape (CT)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Magnetic Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 5700Vrms
Approval Agency: IEC/EN/DIN, UL, VDE
Supplier Device Package: PG-DSO-20-91
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 3V ~ 5.5V, 13.5V ~ 20V
Qualification: AEC-Q100
на замовлення 432 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 265.79 грн |
| 10+ | 193.64 грн |
| 25+ | 177.99 грн |
| 100+ | 150.89 грн |
| 250+ | 143.20 грн |
| IDDD06G65C6XTMA1 |
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Виробник: Infineon Technologies
Description: DIODE SIC 650V 18A PGHDSOP101
Packaging: Bulk
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 302pF @ 1V, 1MHz
Current - Average Rectified (Io): 18A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 20 µA @ 420 V
Description: DIODE SIC 650V 18A PGHDSOP101
Packaging: Bulk
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 302pF @ 1V, 1MHz
Current - Average Rectified (Io): 18A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 20 µA @ 420 V
на замовлення 543 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 233+ | 95.30 грн |
| IDDD12G65C6XTMA1 |
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Виробник: Infineon Technologies
Description: DIODE SIC 650V 34A PGHDSOP101
Packaging: Bulk
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 594pF @ 1V, 1MHz
Current - Average Rectified (Io): 34A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 40 µA @ 420 V
Description: DIODE SIC 650V 34A PGHDSOP101
Packaging: Bulk
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 594pF @ 1V, 1MHz
Current - Average Rectified (Io): 34A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 40 µA @ 420 V
на замовлення 5200 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 121+ | 184.70 грн |
| AUIRF1010Z |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 75A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 75A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
Qualification: AEC-Q101
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| BC847CE6433HTMA1 |
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Виробник: Infineon Technologies
Description: TRANS NPN 45V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
Description: TRANS NPN 45V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5369+ | 4.08 грн |
| SIDC56D60E6X1SA1 |
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Виробник: Infineon Technologies
Description: DIODE STD 600V 150A SAWN ON FOIL
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 150A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Description: DIODE STD 600V 150A SAWN ON FOIL
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 150A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
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| IQFH47N04NM6ATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH <= 40V
Input Capacitance (Ciss) (Max) @ Vds: 13300 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 221 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TSON-12-1
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Power Dissipation (Max): 3W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 507A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 12-PowerTDFN
Packaging: Tape & Reel (TR)
Description: TRENCH <= 40V
Input Capacitance (Ciss) (Max) @ Vds: 13300 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 221 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TSON-12-1
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Power Dissipation (Max): 3W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 507A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 12-PowerTDFN
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 155.17 грн |
| IQFH47N04NM6ATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH <= 40V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TSON-12-1
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Power Dissipation (Max): 3W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 507A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 12-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 13300 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 221 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Description: TRENCH <= 40V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TSON-12-1
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Power Dissipation (Max): 3W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 507A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 12-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 13300 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 221 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 397.53 грн |
| 10+ | 255.20 грн |
| 100+ | 182.96 грн |
| 500+ | 142.79 грн |
| 1000+ | 140.23 грн |
| IGB110S10S1XTMA1 |
Виробник: Infineon Technologies
Description: MV GAN DISCRETES
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 5V
Power Dissipation (Max): 2.5W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 3mA
Supplier Device Package: PG-TSON-4-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 50 V
Description: MV GAN DISCRETES
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 5V
Power Dissipation (Max): 2.5W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 3mA
Supplier Device Package: PG-TSON-4-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 50 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
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| AUIRLS3034 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 195A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 10315 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 195A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 10315 pF @ 25 V
Qualification: AEC-Q101
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| ISC800P06LMATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19.6A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 16A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 724µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 30 V
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19.6A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 16A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 724µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 30 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
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| ISC800P06LMATMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19.6A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 16A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 724µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 30 V
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19.6A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 16A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 724µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 30 V
на замовлення 4594 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 116.24 грн |
| 10+ | 71.26 грн |
| 100+ | 47.79 грн |
| 500+ | 35.40 грн |
| 1000+ | 32.36 грн |
| 2000+ | 32.12 грн |
| SAF-XE164H-96F66L AC |
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Виробник: Infineon Technologies
Description: IC MCU 16BIT 768KB FLASH 100LQFP
DigiKey Programmable: Not Verified
Number of I/O: 75
Supplier Device Package: PG-LQFP-100-3
Peripherals: I2S, POR, PWM, WDT
Connectivity: EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 16x10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 82K x 8
Program Memory Size: 768KB (768K x 8)
Speed: 66MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC MCU 16BIT 768KB FLASH 100LQFP
DigiKey Programmable: Not Verified
Number of I/O: 75
Supplier Device Package: PG-LQFP-100-3
Peripherals: I2S, POR, PWM, WDT
Connectivity: EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 16x10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 82K x 8
Program Memory Size: 768KB (768K x 8)
Speed: 66MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1400 шт
В кошику
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| XE164K96F66LACFXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 16BIT 768KB FLASH 100LQFP
DigiKey Programmable: Not Verified
Number of I/O: 75
Supplier Device Package: PG-LQFP-100-3
Peripherals: I2S, POR, PWM, WDT
Connectivity: EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 11x10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 82K x 8
Program Memory Size: 768KB (768K x 8)
Speed: 66MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC MCU 16BIT 768KB FLASH 100LQFP
DigiKey Programmable: Not Verified
Number of I/O: 75
Supplier Device Package: PG-LQFP-100-3
Peripherals: I2S, POR, PWM, WDT
Connectivity: EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 11x10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 82K x 8
Program Memory Size: 768KB (768K x 8)
Speed: 66MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1400 шт
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| XE164K96F66LACFXQMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 16BIT 768KB FLASH 100LQFP
RAM Size: 82K x 8
Program Memory Size: 768KB (768K x 8)
Speed: 66MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 75
Supplier Device Package: PG-LQFP-100-3
Peripherals: I2S, POR, PWM, WDT
Connectivity: EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 11x10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
Description: IC MCU 16BIT 768KB FLASH 100LQFP
RAM Size: 82K x 8
Program Memory Size: 768KB (768K x 8)
Speed: 66MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 75
Supplier Device Package: PG-LQFP-100-3
Peripherals: I2S, POR, PWM, WDT
Connectivity: EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 11x10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
товару немає в наявності
Мінімальне замовлення: 540 шт
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| XC228796F66LACKXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 16/32B 768KB FLSH 144LQFP
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 82K x 8
Program Memory Size: 768KB (768K x 8)
Speed: 66MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Number of I/O: 118
Supplier Device Package: PG-LQFP-144-4
Peripherals: DMA, I2S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 24x10b
Description: IC MCU 16/32B 768KB FLSH 144LQFP
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 82K x 8
Program Memory Size: 768KB (768K x 8)
Speed: 66MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Number of I/O: 118
Supplier Device Package: PG-LQFP-144-4
Peripherals: DMA, I2S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 24x10b
товару немає в наявності
Мінімальне замовлення: 1000 шт
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| XE164G96F66LACFXQMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 16BIT 768KB FLASH 100LQFP
Core Size: 16-Bit
Data Converters: A/D 11x10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 82K x 8
Program Memory Size: 768KB (768K x 8)
Speed: 66MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 75
Supplier Device Package: PG-LQFP-100-3
Peripherals: I2S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Description: IC MCU 16BIT 768KB FLASH 100LQFP
Core Size: 16-Bit
Data Converters: A/D 11x10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 82K x 8
Program Memory Size: 768KB (768K x 8)
Speed: 66MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 75
Supplier Device Package: PG-LQFP-100-3
Peripherals: I2S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
товару немає в наявності
Мінімальне замовлення: 540 шт
В кошику
од. на суму грн.
| XE164H96F66LACFXQMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 16BIT 768KB FLASH 100LQFP
DigiKey Programmable: Not Verified
Number of I/O: 75
Supplier Device Package: PG-LQFP-100-8
Peripherals: I2S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 16x10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 82K x 8
Program Memory Size: 768KB (768K x 8)
Speed: 66MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Tray
Description: IC MCU 16BIT 768KB FLASH 100LQFP
DigiKey Programmable: Not Verified
Number of I/O: 75
Supplier Device Package: PG-LQFP-100-8
Peripherals: I2S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 16x10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 82K x 8
Program Memory Size: 768KB (768K x 8)
Speed: 66MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 540 шт
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од. на суму грн.
| CY9AF344LAQN-G-AVE2 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 288KB 64VFQFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 51
Description: IC MCU 32BIT 288KB 64VFQFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 51
товару немає в наявності
Мінімальне замовлення: 2600 шт
В кошику
од. на суму грн.
| AUIRG4PC40S-E |
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Виробник: Infineon Technologies
Description: IGBT 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 31A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 22ns/650ns
Switching Energy: 450µJ (on), 6.5mJ (off)
Test Condition: 480V, 31A, 10Ohm, 15V
Gate Charge: 150 nC
Grade: Automotive
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 160 W
Qualification: AEC-Q101
Description: IGBT 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 31A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 22ns/650ns
Switching Energy: 450µJ (on), 6.5mJ (off)
Test Condition: 480V, 31A, 10Ohm, 15V
Gate Charge: 150 nC
Grade: Automotive
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 160 W
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 400 шт
В кошику
од. на суму грн.
| 1EDI3025ASXUMA1 |
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Виробник: Infineon Technologies
Description: BTM9011EPXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Magnetic Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 5700Vrms
Approval Agency: IEC/EN/DIN, UL, VDE
Supplier Device Package: PG-DSO-20-91
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 3V ~ 5.5V, 13.5V ~ 17V
Qualification: AEC-Q100
Description: BTM9011EPXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Magnetic Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 5700Vrms
Approval Agency: IEC/EN/DIN, UL, VDE
Supplier Device Package: PG-DSO-20-91
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 3V ~ 5.5V, 13.5V ~ 17V
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| 1EDI3025ASXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: BTM9011EPXUMA1
Packaging: Cut Tape (CT)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Magnetic Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 5700Vrms
Approval Agency: IEC/EN/DIN, UL, VDE
Supplier Device Package: PG-DSO-20-91
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 3V ~ 5.5V, 13.5V ~ 17V
Qualification: AEC-Q100
Description: BTM9011EPXUMA1
Packaging: Cut Tape (CT)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Magnetic Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 5700Vrms
Approval Agency: IEC/EN/DIN, UL, VDE
Supplier Device Package: PG-DSO-20-91
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 3V ~ 5.5V, 13.5V ~ 17V
Qualification: AEC-Q100
на замовлення 424 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 334.76 грн |
| 10+ | 245.13 грн |
| 25+ | 225.77 грн |
| 100+ | 191.93 грн |
| 250+ | 182.42 грн |
| S26KL512SDABHB030 |
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Виробник: Infineon Technologies
Description: IC FLASH 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Grade: Automotive
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC FLASH 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Grade: Automotive
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 338 шт
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| 4DIR0400HXUMA1 |
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Виробник: Infineon Technologies
Description: DGTL ISOLTR 5.7KV 4CH SPI 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 6.5V
Data Rate: 40Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: PG-DSO-16-46
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 26ns, 26ns (Typ)
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 3ns
Number of Channels: 4
Description: DGTL ISOLTR 5.7KV 4CH SPI 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 6.5V
Data Rate: 40Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: PG-DSO-16-46
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 26ns, 26ns (Typ)
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 3ns
Number of Channels: 4
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Мінімальне замовлення: 1500 шт
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| 4DIR0400HXUMA1 |
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Виробник: Infineon Technologies
Description: DGTL ISOLTR 5.7KV 4CH SPI 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 6.5V
Data Rate: 40Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: PG-DSO-16-46
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 26ns, 26ns (Typ)
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 3ns
Number of Channels: 4
Description: DGTL ISOLTR 5.7KV 4CH SPI 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 6.5V
Data Rate: 40Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: PG-DSO-16-46
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 26ns, 26ns (Typ)
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 3ns
Number of Channels: 4
на замовлення 1426 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 156.53 грн |
| 10+ | 108.42 грн |
| 100+ | 83.35 грн |
| 500+ | 67.86 грн |
| AUIRF1018ES |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 79A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 50 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 79A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 50 V
Qualification: AEC-Q101
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| IRSM836-015MA |
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Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 1A 36QFN
Features: Bootstrap Circuit
Packaging: Bulk
Package / Case: 36-PowerVQFN
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 4.8Ohm
Applications: AC Motors
Current - Output / Channel: 1A
Current - Peak Output: 7A
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 36-PQFN (12x12)
Fault Protection: UVLO
Load Type: Inductive
Description: IC HALF BRIDGE DRIVER 1A 36QFN
Features: Bootstrap Circuit
Packaging: Bulk
Package / Case: 36-PowerVQFN
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 4.8Ohm
Applications: AC Motors
Current - Output / Channel: 1A
Current - Peak Output: 7A
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 36-PQFN (12x12)
Fault Protection: UVLO
Load Type: Inductive
на замовлення 736 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 358.30 грн |
| IGLD65R055D2AUMA1 |
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Виробник: Infineon Technologies
Description: GANFET N-CH 650V 20A 8LDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-LDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 7.9A
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-LSON-8-1
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V
Description: GANFET N-CH 650V 20A 8LDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-LDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 7.9A
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-LSON-8-1
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V
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Мінімальне замовлення: 3000 шт
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| IGLD65R055D2AUMA1 |
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Виробник: Infineon Technologies
Description: GANFET N-CH 650V 20A 8LDFN
Packaging: Cut Tape (CT)
Package / Case: 8-LDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 7.9A
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-LSON-8-1
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V
Description: GANFET N-CH 650V 20A 8LDFN
Packaging: Cut Tape (CT)
Package / Case: 8-LDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 7.9A
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-LSON-8-1
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V
на замовлення 2565 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 492.84 грн |
| 10+ | 320.20 грн |
| 100+ | 232.53 грн |
| 500+ | 207.08 грн |
| FP20R06W1E3B3BPSA1 |
Виробник: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 27 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 94 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1100 pF @ 25 V
Description: LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 27 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 94 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1100 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 24 шт
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| IMT40R045M2HXTMA1 |
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Виробник: Infineon Technologies
Description: SIC-MOS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 43A (Tc)
Rds On (Max) @ Id, Vgs: 56.2mOhm @ 8.9A, 18V
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.2mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 200 V
Description: SIC-MOS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 43A (Tc)
Rds On (Max) @ Id, Vgs: 56.2mOhm @ 8.9A, 18V
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.2mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 200 V
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Мінімальне замовлення: 2000 шт
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| IMT40R045M2HXTMA1 |
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Виробник: Infineon Technologies
Description: SIC-MOS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 43A (Tc)
Rds On (Max) @ Id, Vgs: 56.2mOhm @ 8.9A, 18V
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.2mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 200 V
Description: SIC-MOS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 43A (Tc)
Rds On (Max) @ Id, Vgs: 56.2mOhm @ 8.9A, 18V
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.2mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 200 V
на замовлення 1890 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 497.49 грн |
| 10+ | 325.79 грн |
| 100+ | 262.40 грн |
| 500+ | 225.61 грн |
| IR38060MGM18TRPXUMA1 |
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Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 6A 26PQFN
Packaging: Tape & Reel (TR)
Package / Case: 26-PowerTFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: Up to 1.5MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: 26-PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14V
Voltage - Input (Min): 1.2V
Voltage - Output (Min/Fixed): 0.5V
Description: IC REG BUCK ADJ 6A 26PQFN
Packaging: Tape & Reel (TR)
Package / Case: 26-PowerTFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: Up to 1.5MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: 26-PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14V
Voltage - Input (Min): 1.2V
Voltage - Output (Min/Fixed): 0.5V
товару немає в наявності
Мінімальне замовлення: 4000 шт
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| IDK05G65C5XTMA1 |
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Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 5A PGTO2632
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 160pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 830 µA @ 650 V
Description: DIODE SIL CARB 650V 5A PGTO2632
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 160pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 830 µA @ 650 V
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 156+ | 131.09 грн |
| IDK05G65C5XTMA2 |
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Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 5A PGTO2632
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 160pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 830 µA @ 650 V
Description: DIODE SIL CARB 650V 5A PGTO2632
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 160pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 830 µA @ 650 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
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| CY7C4215V-15ASXC |
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Виробник: Infineon Technologies
Description: IC FIFO SYNC 512X18 11NS 64TQFP
Retransmit Capability: Yes
Programmable Flags Support: Yes
Expansion Type: Depth, Width
Bus Directional: Uni-Directional
Supplier Device Package: 64-TQFP (14x14)
Current - Supply (Max): 30mA
Access Time: 11ns
Data Rate: 66.7MHz
Operating Temperature: 0°C ~ 70°C
Memory Size: 9K (512 x 18)
Function: Synchronous
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Voltage - Supply: 3 V ~ 3.6 V
FWFT Support: No
Description: IC FIFO SYNC 512X18 11NS 64TQFP
Retransmit Capability: Yes
Programmable Flags Support: Yes
Expansion Type: Depth, Width
Bus Directional: Uni-Directional
Supplier Device Package: 64-TQFP (14x14)
Current - Supply (Max): 30mA
Access Time: 11ns
Data Rate: 66.7MHz
Operating Temperature: 0°C ~ 70°C
Memory Size: 9K (512 x 18)
Function: Synchronous
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Voltage - Supply: 3 V ~ 3.6 V
FWFT Support: No
товару немає в наявності
Мінімальне замовлення: 160 шт
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| CY7C421-10JXC |
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Виробник: Infineon Technologies
Description: IC FIFO ASYNC 512X9 10NS 32PLCC
DigiKey Programmable: Not Verified
Voltage - Supply: 4.5 V ~ 5.5 V
FWFT Support: No
Retransmit Capability: Yes
Programmable Flags Support: No
Expansion Type: Depth, Width
Bus Directional: Uni-Directional
Supplier Device Package: 32-PLCC (11.43x13.97)
Current - Supply (Max): 85mA
Access Time: 10ns
Data Rate: 50MHz
Operating Temperature: 0°C ~ 70°C
Memory Size: 4.5K (512 x 9)
Function: Asynchronous
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Packaging: Tube
Description: IC FIFO ASYNC 512X9 10NS 32PLCC
DigiKey Programmable: Not Verified
Voltage - Supply: 4.5 V ~ 5.5 V
FWFT Support: No
Retransmit Capability: Yes
Programmable Flags Support: No
Expansion Type: Depth, Width
Bus Directional: Uni-Directional
Supplier Device Package: 32-PLCC (11.43x13.97)
Current - Supply (Max): 85mA
Access Time: 10ns
Data Rate: 50MHz
Operating Temperature: 0°C ~ 70°C
Memory Size: 4.5K (512 x 9)
Function: Asynchronous
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Packaging: Tube
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| CY7C4211-15JXC |
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Виробник: Infineon Technologies
Description: IC FIFO SYNC 512X9 10NS 32PLCC
Packaging: Tube
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 4.5K (512 x 9)
Operating Temperature: 0°C ~ 70°C
Data Rate: 66.7MHz
Access Time: 10ns
Current - Supply (Max): 35mA
Supplier Device Package: 32-PLCC (11.43x13.97)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: No
FWFT Support: No
Voltage - Supply: 4.5 V ~ 5.5 V
DigiKey Programmable: Not Verified
Description: IC FIFO SYNC 512X9 10NS 32PLCC
Packaging: Tube
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 4.5K (512 x 9)
Operating Temperature: 0°C ~ 70°C
Data Rate: 66.7MHz
Access Time: 10ns
Current - Supply (Max): 35mA
Supplier Device Package: 32-PLCC (11.43x13.97)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: No
FWFT Support: No
Voltage - Supply: 4.5 V ~ 5.5 V
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| TLE4972EVALVERBARTOBO1 |
Виробник: Infineon Technologies
Description: TLE4972 EVAL VER BAR
Sensing Range: 842A
Embedded: No
Utilized IC / Part: TLE4972
Sensor Type: Current Sensor
Voltage - Supply: 3.1V ~ 3.3V
Contents: Board(s)
Interface: Analog
Packaging: Bulk
Description: TLE4972 EVAL VER BAR
Sensing Range: 842A
Embedded: No
Utilized IC / Part: TLE4972
Sensor Type: Current Sensor
Voltage - Supply: 3.1V ~ 3.3V
Contents: Board(s)
Interface: Analog
Packaging: Bulk
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 71399.99 грн |
| TLE4973EVALVERBARTOBO1 |
Виробник: Infineon Technologies
Description: TLE4973 EVAL VER BAR
Packaging: Bulk
Interface: Analog
Contents: Board(s)
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Current Sensor
Utilized IC / Part: TLE4973
Embedded: No
Sensing Range: 920A
Description: TLE4973 EVAL VER BAR
Packaging: Bulk
Interface: Analog
Contents: Board(s)
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Current Sensor
Utilized IC / Part: TLE4973
Embedded: No
Sensing Range: 920A
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 71399.99 грн |
| D1821SH45TS05XOSA1 |
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Виробник: Infineon Technologies
Description: DIODE STD 4500V 1710A BGD10026K1
Packaging: Bulk
Package / Case: DO-200, Variant
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1710A
Supplier Device Package: BG-D10026K-1
Voltage - DC Reverse (Vr) (Max): 4500 V
Description: DIODE STD 4500V 1710A BGD10026K1
Packaging: Bulk
Package / Case: DO-200, Variant
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1710A
Supplier Device Package: BG-D10026K-1
Voltage - DC Reverse (Vr) (Max): 4500 V
товару немає в наявності
В кошику
од. на суму грн.
| EVALISSI20R02HTSTOBO1 |
Виробник: Infineon Technologies
Description: EVAL BOARD FOR ISSI20R02H
Embedded: No
Primary Attributes: 2.5V ~ 3.5V Input Voltage
Utilized IC / Part: iSSI20R02H
Contents: Board(s)
Type: Interface
Function: Isolator
Packaging: Box
Description: EVAL BOARD FOR ISSI20R02H
Embedded: No
Primary Attributes: 2.5V ~ 3.5V Input Voltage
Utilized IC / Part: iSSI20R02H
Contents: Board(s)
Type: Interface
Function: Isolator
Packaging: Box
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 13144.76 грн |
| EVALISSI20R02HCSTOBO1 |
![]() |
Виробник: Infineon Technologies
Description: EVAL BOARD FOR ISSI20R02H
Embedded: No
Primary Attributes: 2.5V ~ 3.5V Input Voltage
Utilized IC / Part: iSSI20R02H
Contents: Board(s)
Type: Interface
Function: Isolator
Packaging: Box
Description: EVAL BOARD FOR ISSI20R02H
Embedded: No
Primary Attributes: 2.5V ~ 3.5V Input Voltage
Utilized IC / Part: iSSI20R02H
Contents: Board(s)
Type: Interface
Function: Isolator
Packaging: Box
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 13144.76 грн |
| EVALISSI20R11HTOBO1 |
Виробник: Infineon Technologies
Description: EVAL BOARD FOR ISSI20R11H
Embedded: No
Primary Attributes: 2.5V ~ 3.5V Input Voltage
Utilized IC / Part: iSSI20R11H
Contents: Board(s)
Type: Interface
Function: Isolator
Packaging: Box
Description: EVAL BOARD FOR ISSI20R11H
Embedded: No
Primary Attributes: 2.5V ~ 3.5V Input Voltage
Utilized IC / Part: iSSI20R11H
Contents: Board(s)
Type: Interface
Function: Isolator
Packaging: Box
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 13260.22 грн |
| EVALISSI20R03HTOBO1 |
Виробник: Infineon Technologies
Description: EVAL BOARD FOR ISSI20R03H
Embedded: No
Primary Attributes: 2.5V ~ 3.5V Input Voltage
Utilized IC / Part: iSSI20R03H
Contents: Board(s)
Type: Interface
Function: Isolator
Packaging: Box
Description: EVAL BOARD FOR ISSI20R03H
Embedded: No
Primary Attributes: 2.5V ~ 3.5V Input Voltage
Utilized IC / Part: iSSI20R03H
Contents: Board(s)
Type: Interface
Function: Isolator
Packaging: Box
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 13260.22 грн |
| BCR402W12VLEDBOARDTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR BCR402W
Packaging: Box
Voltage - Input: 12V
Contents: Board(s)
Current - Output / Channel: 20mA
Utilized IC / Part: BCR402W
Outputs and Type: 1 Non-Isolated Output
Description: EVAL BOARD FOR BCR402W
Packaging: Box
Voltage - Input: 12V
Contents: Board(s)
Current - Output / Channel: 20mA
Utilized IC / Part: BCR402W
Outputs and Type: 1 Non-Isolated Output
товару немає в наявності
В кошику
од. на суму грн.
| BCR402W24VLEDBOARDTOBO1 |
![]() |
Виробник: Infineon Technologies
Description: EVAL BOARD FOR BCR402W
Packaging: Box
Voltage - Input: 24V
Contents: Board(s)
Current - Output / Channel: 20mA
Utilized IC / Part: BCR402W
Outputs and Type: 1 Non-Isolated Output
Description: EVAL BOARD FOR BCR402W
Packaging: Box
Voltage - Input: 24V
Contents: Board(s)
Current - Output / Channel: 20mA
Utilized IC / Part: BCR402W
Outputs and Type: 1 Non-Isolated Output
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1293.32 грн |





































