Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149103) > Сторінка 745 з 2486
Фото | Назва | Виробник | Інформація |
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CY8C4127LQI-BL483 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 56-UFQFN Exposed Pad Sensitivity: -91dBm Mounting Type: Surface Mount Frequency: 2.4GHz Memory Size: 128kB Flash, 8kB ROM, 16kB SRAM Type: TxRx + MCU Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Power - Output: 3dB Protocol: Bluetooth v4.2 Current - Receiving: 16.4mA ~ 18.7mA Data Rate (Max): 8Mbps Current - Transmitting: 14.2mA ~ 20mA Supplier Device Package: 56-QFN (7x7) GPIO: 36 Modulation: GFSK RF Family/Standard: Bluetooth, General ISM > 1GHz Serial Interfaces: I2C, SPI, UART DigiKey Programmable: Not Verified |
на замовлення 105 шт: термін постачання 21-31 дні (днів) |
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XC164CS32F40FBBAKXQMA1 | Infineon Technologies |
![]() Packaging: Tray Speed: 40MHz Program Memory Size: 256KB (256K x 8) RAM Size: 12K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 14x8/10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V Connectivity: CANbus, EBI/EMI, SPI, UART/USART Peripherals: PWM, WDT Number of I/O: 79 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BSP318SL6327HTSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 2.6A, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 2V @ 20µA Supplier Device Package: PG-SOT223-4-21 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V |
на замовлення 2789000 шт: термін постачання 21-31 дні (днів) |
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TLS115B0LDDEMOBOARDTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR TLS115B0LD Packaging: Bulk Voltage - Output: 2V ~ 14V Voltage - Input: 4V ~ 45V Current - Output: 150mA Regulator Type: Positive Adjustable Board Type: Fully Populated Utilized IC / Part: TLS115B0LD Supplied Contents: Board(s) Channels per IC: 1 - Single Contents: Board(s) |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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TLS810B1LDV50BOARDTOBO1 | Infineon Technologies |
![]() Packaging: Bulk Voltage - Output: 5V Voltage - Input: 3V ~ 42V Current - Output: 100mA Regulator Type: Positive Fixed Board Type: Fully Populated Utilized IC / Part: TLS810B1LDV50 Supplied Contents: Board(s) Channels per IC: 1 - Single Contents: Board(s) |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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TLS810A1LDV50BOARDTOBO1 | Infineon Technologies |
![]() Packaging: Bulk Voltage - Output: 5V Voltage - Input: 3V ~ 42V Current - Output: 100mA Contents: Board(s) Regulator Type: Positive Fixed Board Type: Fully Populated Utilized IC / Part: TLS810A1LDV50 Supplied Contents: Board(s) Channels per IC: 1 - Single |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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TLS810D1LDV50BOARDTOBO1 | Infineon Technologies |
![]() Packaging: Bulk Voltage - Output: 5V Voltage - Input: 3V ~ 42V Current - Output: 100mA Contents: Board(s) Regulator Type: Positive Fixed Board Type: Fully Populated Utilized IC / Part: TLS810D1LDV50 Supplied Contents: Board(s) Channels per IC: 1 - Single |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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TLS810B1LDV33BOARDTOBO1 | Infineon Technologies |
Description: TLS810B1LDV33 BOARD Packaging: Bulk Voltage - Output: 3.3V Voltage - Input: 3V ~ 42V Current - Output: 100mA Regulator Type: Positive Fixed Board Type: Fully Populated Utilized IC / Part: TLS810B1LD Supplied Contents: Board(s) Channels per IC: 1 - Single |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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S25FL256LAGNFN011 | Infineon Technologies |
![]() Packaging: Tube Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Memory Interface: SPI - Quad I/O, QPI Memory Organization: 32M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRS21956SPBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: 20-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 20-SOIC Rise / Fall Time (Typ): 25ns, 15ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 3.5V Current - Peak Output (Source, Sink): 500mA, 500mA DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY9AF112NAPF-G-JNE1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 100-BQFP Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 16x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 100-QFP (14x20) Number of I/O: 83 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY9AF114NAPF-G-JNE1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 100-BQFP Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 256KB (256K x 8) RAM Size: 32K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 16x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 100-QFP (14x20) Number of I/O: 83 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY9AF115NAPF-G-JNE1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 100-BQFP Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 384KB (384K x 8) RAM Size: 32K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 16x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 100-QFP (14x20) Number of I/O: 83 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY9AF116NAPF-G-JNE1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 100-BQFP Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 512KB (512K x 8) RAM Size: 32K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 16x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 100-QFP (14x20) Number of I/O: 83 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY9AF311NAPF-G-JNE1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 100-BQFP Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 64KB (64K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 16x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 100-QFP (14x20) Number of I/O: 83 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY9AF312NAPF-G-JNE1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 100-BQFP Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 16x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 100-QFP (14x20) Number of I/O: 83 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MB90F809SPF-G-JNE1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 100-BQFP Mounting Type: Surface Mount Speed: 25MHz Program Memory Size: 192KB (192K x 8) RAM Size: 10K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: F²MC-16LX Data Converters: A/D 12x8/10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V Connectivity: I2C, Serial I/O, UART/USART Peripherals: LCD, PWM, WDT Supplier Device Package: 100-QFP (14x20) Number of I/O: 70 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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GATELEADL500PB20G1KXPSA1 | Infineon Technologies |
![]() Packaging: Tray Type: Power Contacts to Wire Number of Lines: 2 Cable Length - Unexposed: 1.64' (0.50m) 19.69" |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY8C4147AZE-S295 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 16x10b, 20x12b SAR Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT Supplier Device Package: 64-TQFP (10x10) Grade: Automotive Number of I/O: 54 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
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IAUMN08S5N012GAUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tj) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V Power Dissipation (Max): 325W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 232µA Supplier Device Package: PG-HSOG-4-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 194 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13550 pF @ 40 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IAUMN08S5N012GAUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 4-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tj) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V Power Dissipation (Max): 325W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 232µA Supplier Device Package: PG-HSOG-4-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 194 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13550 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 1859 шт: термін постачання 21-31 дні (днів) |
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CYT2BL5CAAQ0AZEGST | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 100MHz, 160MHz Program Memory Size: 4.063MB (4.063M x 8) RAM Size: 512K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH EEPROM Size: 128K x 8 Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F Data Converters: A/D 57x12b SAR Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT Supplier Device Package: 100-LQFP (14x14) Number of I/O: 78 DigiKey Programmable: Not Verified |
на замовлення 400 шт: термін постачання 21-31 дні (днів) |
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SAF-XE167KM-72F80L AA | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 144-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 576KB (576K x 8) RAM Size: 50K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 16x10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI Peripherals: I2S, POR, PWM, WDT Supplier Device Package: PG-LQFP-144-4 Number of I/O: 119 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SAK-XE167KM-72F80L AA | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 144-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 576KB (576K x 8) RAM Size: 50K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 16x10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI Peripherals: I2S, POR, PWM, WDT Supplier Device Package: PG-LQFP-144-4 Number of I/O: 119 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SAK-XE167GM-72F80L AA | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 144-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 576KB (576K x 8) RAM Size: 50K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 16x10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI Peripherals: I2S, POR, PWM, WDT Supplier Device Package: PG-LQFP-144-4 Number of I/O: 119 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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XE167G96F66LACFXQMA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 144-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 66MHz Program Memory Size: 768KB (768K x 8) RAM Size: 82K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 16x10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI Peripherals: I2S, POR, PWM, WDT Supplier Device Package: PG-LQFP-144-4 Number of I/O: 118 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CYUSB3312-BVXI | Infineon Technologies |
![]() Packaging: Tray Package / Case: 100-VFBGA Mounting Type: Surface Mount Interface: I2C RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.14V ~ 1.26V, 2.5V ~ 2.7V, 3V ~ 3.6V Controller Series: CYUSB Program Memory Type: ROM (32kB) Applications: USB 3.0 Hub Controller Core Processor: ARM® Cortex®-M0 Supplier Device Package: 100-VFBGA (6x6) Number of I/O: 10 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ISP25DP06LMSATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta) Rds On (Max) @ Id, Vgs: 250mOhm @ 1.9A, 10V Power Dissipation (Max): 1.8W (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 2V @ 270µA Supplier Device Package: PG-SOT223 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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ISP25DP06LMSATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta) Rds On (Max) @ Id, Vgs: 250mOhm @ 1.9A, 10V Power Dissipation (Max): 1.8W (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 2V @ 270µA Supplier Device Package: PG-SOT223 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V |
на замовлення 5854 шт: термін постачання 21-31 дні (днів) |
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2ED3146MC12LXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 6A, 6.5A Technology: Capacitive Coupling Current - Output High, Low: 6A, 6.5A Voltage - Isolation: 5700Vrms Approval Agency: UL Supplier Device Package: PG-DSO-14-71 Rise / Fall Time (Typ): 20ns, 20ns (Max) Common Mode Transient Immunity (Min): 200kV/µs Propagation Delay tpLH / tpHL (Max): 40ns, 40ns Number of Channels: 2 Voltage - Output Supply: 35V |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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2ED3146MC12LXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 6A, 6.5A Technology: Capacitive Coupling Current - Output High, Low: 6A, 6.5A Voltage - Isolation: 5700Vrms Approval Agency: UL Supplier Device Package: PG-DSO-14-71 Rise / Fall Time (Typ): 20ns, 20ns (Max) Common Mode Transient Immunity (Min): 200kV/µs Propagation Delay tpLH / tpHL (Max): 40ns, 40ns Number of Channels: 2 Voltage - Output Supply: 35V |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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IRFR5410TRRPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 205mOhm @ 7.8A, 10V Power Dissipation (Max): 66W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V |
на замовлення 2990 шт: термін постачання 21-31 дні (днів) |
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IRMCF183MTR | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 32-WFQFN Exposed Pad Mounting Type: Surface Mount Function: Controller - Commutation, Direction Management Interface: RS-232 Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Pre-Driver - Half Bridge (3) Voltage - Supply: 3V ~ 3.6V Applications: General Purpose Technology: IGBT Supplier Device Package: 32-QFN (5x5) Motor Type - AC, DC: AC, Induction, Synchronous |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
IRMCF183M | Infineon Technologies |
![]() Packaging: Tray Package / Case: 32-WFQFN Exposed Pad Mounting Type: Surface Mount Function: Controller - Commutation, Direction Management Interface: RS-232 Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Pre-Driver - Half Bridge (3) Voltage - Supply: 3V ~ 3.6V Applications: General Purpose Technology: IGBT Supplier Device Package: 32-QFN (5x5) Motor Type - AC, DC: AC, Induction, Synchronous |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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6EDL04N065PTXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 10V ~ 17.5V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 650 V Supplier Device Package: PG-DSO-28-17 Rise / Fall Time (Typ): 60ns, 26ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT Logic Voltage - VIL, VIH: 1.1V, 1.7V Current - Peak Output (Source, Sink): 165mA, 375mA |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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6EDL04N065PTXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 10V ~ 17.5V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 650 V Supplier Device Package: PG-DSO-28-17 Rise / Fall Time (Typ): 60ns, 26ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT Logic Voltage - VIL, VIH: 1.1V, 1.7V Current - Peak Output (Source, Sink): 165mA, 375mA |
на замовлення 1998 шт: термін постачання 21-31 дні (днів) |
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BAV70UE6327HTSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 2 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: PG-SC74-6 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 150 nA @ 70 V |
на замовлення 362261 шт: термін постачання 21-31 дні (днів) |
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CY90F362ESPMCR-GE1 | Infineon Technologies |
Description: IC MCU 16BIT 64KB FLASH 48LQFP Packaging: Tray Package / Case: 48-LQFP Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 64KB (64K x 8) RAM Size: 3K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: F²MC-16LX Data Converters: A/D 16x8/10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, LINbus, UART/USART Peripherals: DMA, POR, WDT Supplier Device Package: 48-LQFP (7x7) Number of I/O: 36 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY90F362TESPMCR-GN9E1 | Infineon Technologies |
Description: IC MCU 16BIT 64KB FLASH 48LQFP Packaging: Tray Package / Case: 48-LQFP Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 64KB (64K x 8) RAM Size: 3K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: F²MC-16LX Data Converters: A/D 16x8/10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, LINbus, UART/USART Peripherals: DMA, POR, WDT Supplier Device Package: 48-LQFP (7x7) Number of I/O: 36 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PEB2025NV1.5 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 28-LCC (J-Lead) Mounting Type: Surface Mount Supplier Device Package: PG-LCC-28-R |
на замовлення 40 шт: термін постачання 21-31 дні (днів) |
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IRGP4263D-EPBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 170 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 48A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 70ns/140ns Switching Energy: 2.9mJ (on), 1.4mJ (off) Test Condition: 400V, 48A, 10Ohm, 15V Gate Charge: 145 nC Current - Collector (Ic) (Max): 90 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 192 A Power - Max: 325 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRGP4263DPBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 170 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 48A Supplier Device Package: TO-247AC Td (on/off) @ 25°C: 70ns/140ns Switching Energy: 2.9mJ (on), 1.4mJ (off) Test Condition: 400V, 48A, 10Ohm, 15V Gate Charge: 145 nC Current - Collector (Ic) (Max): 90 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 192 A Power - Max: 325 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1EDI10I12MFXUMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: Magnetic Coupling Supplier Device Package: PG-DSO-8-51 Rise / Fall Time (Typ): 9ns, 6ns Number of Channels: 1 Voltage - Output Supply: 13V ~ 18V |
на замовлення 5068 шт: термін постачання 21-31 дні (днів) |
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2SC0435T2F117HPSA1 | Infineon Technologies |
Description: MODULE GATE DRIVER Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FP25R12W2T4BOMA1 | Infineon Technologies |
![]() Packaging: Bulk |
на замовлення 14 шт: термін постачання 21-31 дні (днів) |
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FS300R17OE4B61BPSA1 | Infineon Technologies |
Description: FS300R17OE4 - IGBT Module Packaging: Bulk |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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IQD005N04NM6CGSCATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 9-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 597A (Tc) Rds On (Max) @ Id, Vgs: 0.49mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1.449mA Supplier Device Package: PG-WHTFN-9-U02 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IQD005N04NM6CGSCATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 9-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 597A (Tc) Rds On (Max) @ Id, Vgs: 0.49mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1.449mA Supplier Device Package: PG-WHTFN-9-U02 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IQD005N04NM6SCATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 597A (Tc) Rds On (Max) @ Id, Vgs: 0.49mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1.449mA Supplier Device Package: PG-WHSON-8-U02 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IQD005N04NM6SCATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 597A (Tc) Rds On (Max) @ Id, Vgs: 0.49mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1.449mA Supplier Device Package: PG-WHSON-8-U02 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FS25R12W1T4BOMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 45 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 205 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
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FF1800R17IP5BPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Inverter Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 1800A NTC Thermistor: No Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 1800 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 105 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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6EDL04N03PRXUMA1 | Infineon Technologies |
Description: 6EDL04N03PRXUMA1 Packaging: Tape & Reel (TR) Package / Case: 25-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 10V ~ 25V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 280 V Supplier Device Package: PG-TSSOP-25 Rise / Fall Time (Typ): 60ns, 26ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: N-Channel, P-Channel MOSFET Logic Voltage - VIL, VIH: 1.1V, 1.7V Current - Peak Output (Source, Sink): 165mA, 375mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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6EDL04N03PRXUMA1 | Infineon Technologies |
Description: 6EDL04N03PRXUMA1 Packaging: Cut Tape (CT) Package / Case: 25-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 10V ~ 25V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 280 V Supplier Device Package: PG-TSSOP-25 Rise / Fall Time (Typ): 60ns, 26ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: N-Channel, P-Channel MOSFET Logic Voltage - VIL, VIH: 1.1V, 1.7V Current - Peak Output (Source, Sink): 165mA, 375mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S25FS064SDSBHM020 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 80 MHz Memory Format: FLASH Supplier Device Package: 24-BGA (8x6) Write Cycle Time - Word, Page: 2ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 8M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S25FS064SDSBHM023 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 80 MHz Memory Format: FLASH Supplier Device Package: 24-BGA (8x6) Write Cycle Time - Word, Page: 2ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 8M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY2309ZXI-1HT | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Output: LVCMOS Frequency - Max: 133.33MHz Type: Fanout Buffer (Distribution), Zero Delay Buffer Input: LVCMOS, LVTTL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.6V Ratio - Input:Output: 1:9 Differential - Input:Output: No/No Supplier Device Package: 16-TSSOP PLL: Yes with Bypass Divider/Multiplier: No/No Number of Circuits: 1 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY2292FXIT | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: CMOS Frequency - Max: 60MHz, 80MHz Type: Clock Generator, Fanout Distribution Input: Clock, Crystal Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.3V, 5V Ratio - Input:Output: 1:6 Differential - Input:Output: No/No Supplier Device Package: 16-SOIC PLL: Yes Divider/Multiplier: Yes/No Number of Circuits: 1 DigiKey Programmable: Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY62147EV30LL-45BVXIT | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 48-VFBGA Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 48-VFBGA (6x8) Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY62147EV30LL-45BVXIT | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 48-VFBGA Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 48-VFBGA (6x8) Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
на замовлення 1634 шт: термін постачання 21-31 дні (днів) |
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CY8C4127LQI-BL483 |
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Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 56QFN
Packaging: Bulk
Package / Case: 56-UFQFN Exposed Pad
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 8kB ROM, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Power - Output: 3dB
Protocol: Bluetooth v4.2
Current - Receiving: 16.4mA ~ 18.7mA
Data Rate (Max): 8Mbps
Current - Transmitting: 14.2mA ~ 20mA
Supplier Device Package: 56-QFN (7x7)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth, General ISM > 1GHz
Serial Interfaces: I2C, SPI, UART
DigiKey Programmable: Not Verified
Description: IC RF TXRX+MCU BLE 56QFN
Packaging: Bulk
Package / Case: 56-UFQFN Exposed Pad
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 8kB ROM, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Power - Output: 3dB
Protocol: Bluetooth v4.2
Current - Receiving: 16.4mA ~ 18.7mA
Data Rate (Max): 8Mbps
Current - Transmitting: 14.2mA ~ 20mA
Supplier Device Package: 56-QFN (7x7)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth, General ISM > 1GHz
Serial Interfaces: I2C, SPI, UART
DigiKey Programmable: Not Verified
на замовлення 105 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
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105+ | 257.55 грн |
XC164CS32F40FBBAKXQMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 16BIT 256KB FLASH
Packaging: Tray
Speed: 40MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 14x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Peripherals: PWM, WDT
Number of I/O: 79
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 256KB FLASH
Packaging: Tray
Speed: 40MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 14x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Peripherals: PWM, WDT
Number of I/O: 79
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
BSP318SL6327HTSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 2.6A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-SOT223-4-21
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
Description: MOSFET N-CH 60V 2.6A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-SOT223-4-21
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
на замовлення 2789000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
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1385+ | 16.44 грн |
TLS115B0LDDEMOBOARDTOBO1 |
Виробник: Infineon Technologies
Description: EVAL BOARD FOR TLS115B0LD
Packaging: Bulk
Voltage - Output: 2V ~ 14V
Voltage - Input: 4V ~ 45V
Current - Output: 150mA
Regulator Type: Positive Adjustable
Board Type: Fully Populated
Utilized IC / Part: TLS115B0LD
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Contents: Board(s)
Description: EVAL BOARD FOR TLS115B0LD
Packaging: Bulk
Voltage - Output: 2V ~ 14V
Voltage - Input: 4V ~ 45V
Current - Output: 150mA
Regulator Type: Positive Adjustable
Board Type: Fully Populated
Utilized IC / Part: TLS115B0LD
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Contents: Board(s)
на замовлення 2 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
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1+ | 2141.40 грн |
TLS810B1LDV50BOARDTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR TLS810B1LDV50
Packaging: Bulk
Voltage - Output: 5V
Voltage - Input: 3V ~ 42V
Current - Output: 100mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: TLS810B1LDV50
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Contents: Board(s)
Description: EVAL BOARD FOR TLS810B1LDV50
Packaging: Bulk
Voltage - Output: 5V
Voltage - Input: 3V ~ 42V
Current - Output: 100mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: TLS810B1LDV50
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Contents: Board(s)
на замовлення 3 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 4073.22 грн |
TLS810A1LDV50BOARDTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR TLS810A1LDV50
Packaging: Bulk
Voltage - Output: 5V
Voltage - Input: 3V ~ 42V
Current - Output: 100mA
Contents: Board(s)
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: TLS810A1LDV50
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Description: EVAL BOARD FOR TLS810A1LDV50
Packaging: Bulk
Voltage - Output: 5V
Voltage - Input: 3V ~ 42V
Current - Output: 100mA
Contents: Board(s)
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: TLS810A1LDV50
Supplied Contents: Board(s)
Channels per IC: 1 - Single
на замовлення 3 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 4073.22 грн |
TLS810D1LDV50BOARDTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR TLS810D1LDV50
Packaging: Bulk
Voltage - Output: 5V
Voltage - Input: 3V ~ 42V
Current - Output: 100mA
Contents: Board(s)
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: TLS810D1LDV50
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Description: EVAL BOARD FOR TLS810D1LDV50
Packaging: Bulk
Voltage - Output: 5V
Voltage - Input: 3V ~ 42V
Current - Output: 100mA
Contents: Board(s)
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: TLS810D1LDV50
Supplied Contents: Board(s)
Channels per IC: 1 - Single
на замовлення 3 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 4073.22 грн |
TLS810B1LDV33BOARDTOBO1 |
Виробник: Infineon Technologies
Description: TLS810B1LDV33 BOARD
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 3V ~ 42V
Current - Output: 100mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: TLS810B1LD
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Description: TLS810B1LDV33 BOARD
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 3V ~ 42V
Current - Output: 100mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: TLS810B1LD
Supplied Contents: Board(s)
Channels per IC: 1 - Single
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S25FL256LAGNFN011 |
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Виробник: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 8WSON
Packaging: Tube
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 256MBIT SPI/QUAD 8WSON
Packaging: Tube
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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IRS21956SPBF |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 20-SOIC
Rise / Fall Time (Typ): 25ns, 15ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 500mA, 500mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 20-SOIC
Rise / Fall Time (Typ): 25ns, 15ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 500mA, 500mA
DigiKey Programmable: Not Verified
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CY9AF112NAPF-G-JNE1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 83
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 128KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 83
DigiKey Programmable: Not Verified
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CY9AF114NAPF-G-JNE1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 83
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 256KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 83
DigiKey Programmable: Not Verified
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CY9AF115NAPF-G-JNE1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 384KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 83
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 384KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 83
DigiKey Programmable: Not Verified
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CY9AF116NAPF-G-JNE1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 83
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 512KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 83
DigiKey Programmable: Not Verified
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CY9AF311NAPF-G-JNE1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 83
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 64KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 83
DigiKey Programmable: Not Verified
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CY9AF312NAPF-G-JNE1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 83
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 128KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 83
DigiKey Programmable: Not Verified
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MB90F809SPF-G-JNE1 |
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Виробник: Infineon Technologies
Description: IC MCU 16BIT 192KB 100BQFP
Packaging: Bulk
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 25MHz
Program Memory Size: 192KB (192K x 8)
RAM Size: 10K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 12x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: I2C, Serial I/O, UART/USART
Peripherals: LCD, PWM, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 70
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 192KB 100BQFP
Packaging: Bulk
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 25MHz
Program Memory Size: 192KB (192K x 8)
RAM Size: 10K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 12x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: I2C, Serial I/O, UART/USART
Peripherals: LCD, PWM, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 70
DigiKey Programmable: Not Verified
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GATELEADL500PB20G1KXPSA1 |
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Виробник: Infineon Technologies
Description: CABLE PWR ENTRY 2WIRE 0.5M
Packaging: Tray
Type: Power Contacts to Wire
Number of Lines: 2
Cable Length - Unexposed: 1.64' (0.50m) 19.69"
Description: CABLE PWR ENTRY 2WIRE 0.5M
Packaging: Tray
Type: Power Contacts to Wire
Number of Lines: 2
Cable Length - Unexposed: 1.64' (0.50m) 19.69"
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CY8C4147AZE-S295 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC MCU 32BIT 128KB FLASH 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 752.79 грн |
10+ | 547.42 грн |
25+ | 503.01 грн |
160+ | 414.30 грн |
320+ | 399.35 грн |
480+ | 391.86 грн |
960+ | 374.64 грн |
IAUMN08S5N012GAUMA1 |
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Виробник: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 325W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 232µA
Supplier Device Package: PG-HSOG-4-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 194 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13550 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 325W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 232µA
Supplier Device Package: PG-HSOG-4-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 194 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13550 pF @ 40 V
Qualification: AEC-Q101
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IAUMN08S5N012GAUMA1 |
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Виробник: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 4-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 325W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 232µA
Supplier Device Package: PG-HSOG-4-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 194 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13550 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 4-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 325W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 232µA
Supplier Device Package: PG-HSOG-4-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 194 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13550 pF @ 40 V
Qualification: AEC-Q101
на замовлення 1859 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 305.35 грн |
10+ | 246.12 грн |
100+ | 194.08 грн |
500+ | 161.98 грн |
CYT2BL5CAAQ0AZEGST |
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Виробник: Infineon Technologies
Description: IC MCU 32BT 4.063MB FLSH 100LQFP
Packaging: Cut Tape (CT)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 4.063MB (4.063M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 57x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 78
DigiKey Programmable: Not Verified
Description: IC MCU 32BT 4.063MB FLSH 100LQFP
Packaging: Cut Tape (CT)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 4.063MB (4.063M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 57x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 78
DigiKey Programmable: Not Verified
на замовлення 400 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1416.09 грн |
10+ | 1089.33 грн |
25+ | 1020.77 грн |
100+ | 887.20 грн |
250+ | 853.49 грн |
SAF-XE167KM-72F80L AA |
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Виробник: Infineon Technologies
Description: IC MCU 16BIT 576KB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 119
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 576KB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 119
DigiKey Programmable: Not Verified
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SAK-XE167KM-72F80L AA |
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Виробник: Infineon Technologies
Description: IC MCU 16BIT 576KB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 119
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 576KB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 119
DigiKey Programmable: Not Verified
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SAK-XE167GM-72F80L AA |
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Виробник: Infineon Technologies
Description: IC MCU 16BIT 576KB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 119
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 576KB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 119
DigiKey Programmable: Not Verified
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XE167G96F66LACFXQMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 16BIT 768KB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 82K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 118
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 768KB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 82K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 118
DigiKey Programmable: Not Verified
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CYUSB3312-BVXI |
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Виробник: Infineon Technologies
Description: IC USB 3.0 HUB 2-PORT 100BGA
Packaging: Tray
Package / Case: 100-VFBGA
Mounting Type: Surface Mount
Interface: I2C
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.14V ~ 1.26V, 2.5V ~ 2.7V, 3V ~ 3.6V
Controller Series: CYUSB
Program Memory Type: ROM (32kB)
Applications: USB 3.0 Hub Controller
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 100-VFBGA (6x6)
Number of I/O: 10
DigiKey Programmable: Not Verified
Description: IC USB 3.0 HUB 2-PORT 100BGA
Packaging: Tray
Package / Case: 100-VFBGA
Mounting Type: Surface Mount
Interface: I2C
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.14V ~ 1.26V, 2.5V ~ 2.7V, 3V ~ 3.6V
Controller Series: CYUSB
Program Memory Type: ROM (32kB)
Applications: USB 3.0 Hub Controller
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 100-VFBGA (6x6)
Number of I/O: 10
DigiKey Programmable: Not Verified
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ISP25DP06LMSATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 1.9A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.9A, 10V
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 270µA
Supplier Device Package: PG-SOT223
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V
Description: MOSFET P-CH 60V 1.9A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.9A, 10V
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 270µA
Supplier Device Package: PG-SOT223
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 12.65 грн |
ISP25DP06LMSATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 1.9A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.9A, 10V
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 270µA
Supplier Device Package: PG-SOT223
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V
Description: MOSFET P-CH 60V 1.9A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.9A, 10V
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 270µA
Supplier Device Package: PG-SOT223
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V
на замовлення 5854 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 44.74 грн |
11+ | 29.18 грн |
100+ | 19.90 грн |
500+ | 15.68 грн |
1000+ | 13.99 грн |
2ED3146MC12LXUMA1 |
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Виробник: Infineon Technologies
Description: 2ED3146MC12LXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14-71
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
Number of Channels: 2
Voltage - Output Supply: 35V
Description: 2ED3146MC12LXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14-71
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
Number of Channels: 2
Voltage - Output Supply: 35V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1500+ | 92.33 грн |
2ED3146MC12LXUMA1 |
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Виробник: Infineon Technologies
Description: 2ED3146MC12LXUMA1
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14-71
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
Number of Channels: 2
Voltage - Output Supply: 35V
Description: 2ED3146MC12LXUMA1
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14-71
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
Number of Channels: 2
Voltage - Output Supply: 35V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 190.75 грн |
10+ | 132.21 грн |
25+ | 119.19 грн |
100+ | 98.45 грн |
250+ | 92.05 грн |
500+ | 88.20 грн |
IRFR5410TRRPBF |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 100V 13A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @ 7.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
Description: MOSFET P-CH 100V 13A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @ 7.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
на замовлення 2990 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 138.16 грн |
10+ | 90.10 грн |
100+ | 70.31 грн |
500+ | 52.67 грн |
1000+ | 48.39 грн |
IRMCF183MTR |
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Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 3V-3.6V 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: RS-232
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 3V ~ 3.6V
Applications: General Purpose
Technology: IGBT
Supplier Device Package: 32-QFN (5x5)
Motor Type - AC, DC: AC, Induction, Synchronous
Description: IC MOTOR DRIVER 3V-3.6V 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: RS-232
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 3V ~ 3.6V
Applications: General Purpose
Technology: IGBT
Supplier Device Package: 32-QFN (5x5)
Motor Type - AC, DC: AC, Induction, Synchronous
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IRMCF183M |
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Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 3V-3.6V 32QFN
Packaging: Tray
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: RS-232
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 3V ~ 3.6V
Applications: General Purpose
Technology: IGBT
Supplier Device Package: 32-QFN (5x5)
Motor Type - AC, DC: AC, Induction, Synchronous
Description: IC MOTOR DRIVER 3V-3.6V 32QFN
Packaging: Tray
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: RS-232
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 3V ~ 3.6V
Applications: General Purpose
Technology: IGBT
Supplier Device Package: 32-QFN (5x5)
Motor Type - AC, DC: AC, Induction, Synchronous
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6EDL04N065PTXUMA1 |
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Виробник: Infineon Technologies
Description: 6EDL04N065PTXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-28-17
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
Description: 6EDL04N065PTXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-28-17
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1000+ | 132.98 грн |
6EDL04N065PTXUMA1 |
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Виробник: Infineon Technologies
Description: 6EDL04N065PTXUMA1
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-28-17
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
Description: 6EDL04N065PTXUMA1
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-28-17
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
на замовлення 1998 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 240.99 грн |
10+ | 174.23 грн |
25+ | 159.80 грн |
100+ | 135.08 грн |
250+ | 127.98 грн |
500+ | 123.70 грн |
BAV70UE6327HTSA1 |
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Виробник: Infineon Technologies
Description: DIODE ARRAY GP 80V 200MA SC74-6
Packaging: Bulk
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SC74-6
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
Description: DIODE ARRAY GP 80V 200MA SC74-6
Packaging: Bulk
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SC74-6
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
на замовлення 362261 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4459+ | 5.24 грн |
CY90F362ESPMCR-GE1 |
Виробник: Infineon Technologies
Description: IC MCU 16BIT 64KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 3K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 16x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, LINbus, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 64KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 3K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 16x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, LINbus, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
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CY90F362TESPMCR-GN9E1 |
Виробник: Infineon Technologies
Description: IC MCU 16BIT 64KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 3K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 16x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, LINbus, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 64KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 3K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 16x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, LINbus, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
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PEB2025NV1.5 |
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Виробник: Infineon Technologies
Description: ISDN EXCHANGE POWER CONTROLLER
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Supplier Device Package: PG-LCC-28-R
Description: ISDN EXCHANGE POWER CONTROLLER
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Supplier Device Package: PG-LCC-28-R
на замовлення 40 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
23+ | 959.47 грн |
IRGP4263D-EPBF |
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Виробник: Infineon Technologies
Description: IGBT 650V 90A 325W TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 170 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 48A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 70ns/140ns
Switching Energy: 2.9mJ (on), 1.4mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 192 A
Power - Max: 325 W
Description: IGBT 650V 90A 325W TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 170 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 48A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 70ns/140ns
Switching Energy: 2.9mJ (on), 1.4mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 192 A
Power - Max: 325 W
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IRGP4263DPBF |
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Виробник: Infineon Technologies
Description: IGBT 650V 90A 325W TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 170 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 48A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 70ns/140ns
Switching Energy: 2.9mJ (on), 1.4mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 192 A
Power - Max: 325 W
Description: IGBT 650V 90A 325W TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 170 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 48A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 70ns/140ns
Switching Energy: 2.9mJ (on), 1.4mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 192 A
Power - Max: 325 W
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1EDI10I12MFXUMA1 |
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Виробник: Infineon Technologies
Description: DIGITAL ISO 1CH GATE DVR DSO8-51
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Supplier Device Package: PG-DSO-8-51
Rise / Fall Time (Typ): 9ns, 6ns
Number of Channels: 1
Voltage - Output Supply: 13V ~ 18V
Description: DIGITAL ISO 1CH GATE DVR DSO8-51
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Supplier Device Package: PG-DSO-8-51
Rise / Fall Time (Typ): 9ns, 6ns
Number of Channels: 1
Voltage - Output Supply: 13V ~ 18V
на замовлення 5068 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
373+ | 59.10 грн |
FP25R12W2T4BOMA1 |
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на замовлення 14 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7+ | 3709.55 грн |
FS300R17OE4B61BPSA1 |
на замовлення 1 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 48514.40 грн |
IQD005N04NM6CGSCATMA1 |
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Виробник: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 597A (Tc)
Rds On (Max) @ Id, Vgs: 0.49mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.449mA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 597A (Tc)
Rds On (Max) @ Id, Vgs: 0.49mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.449mA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
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IQD005N04NM6CGSCATMA1 |
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Виробник: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 597A (Tc)
Rds On (Max) @ Id, Vgs: 0.49mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.449mA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 597A (Tc)
Rds On (Max) @ Id, Vgs: 0.49mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.449mA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
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IQD005N04NM6SCATMA1 |
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Виробник: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 597A (Tc)
Rds On (Max) @ Id, Vgs: 0.49mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.449mA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 597A (Tc)
Rds On (Max) @ Id, Vgs: 0.49mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.449mA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
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IQD005N04NM6SCATMA1 |
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Виробник: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 597A (Tc)
Rds On (Max) @ Id, Vgs: 0.49mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.449mA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 597A (Tc)
Rds On (Max) @ Id, Vgs: 0.49mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.449mA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
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FS25R12W1T4BOMA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 45A 205W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 205 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
Description: IGBT MOD 1200V 45A 205W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 205 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
на замовлення 15 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10+ | 2384.12 грн |
FF1800R17IP5BPSA1 |
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Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 1800A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 1800A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 105 nF @ 25 V
Description: IGBT MODULE 1700V 1800A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 1800A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 105 nF @ 25 V
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6EDL04N03PRXUMA1 |
Виробник: Infineon Technologies
Description: 6EDL04N03PRXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 25-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 25V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 280 V
Supplier Device Package: PG-TSSOP-25
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
Description: 6EDL04N03PRXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 25-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 25V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 280 V
Supplier Device Package: PG-TSSOP-25
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
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6EDL04N03PRXUMA1 |
Виробник: Infineon Technologies
Description: 6EDL04N03PRXUMA1
Packaging: Cut Tape (CT)
Package / Case: 25-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 25V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 280 V
Supplier Device Package: PG-TSSOP-25
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
Description: 6EDL04N03PRXUMA1
Packaging: Cut Tape (CT)
Package / Case: 25-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 25V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 280 V
Supplier Device Package: PG-TSSOP-25
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
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S25FS064SDSBHM020 |
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Виробник: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Write Cycle Time - Word, Page: 2ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 64MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Write Cycle Time - Word, Page: 2ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
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S25FS064SDSBHM023 |
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Виробник: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Write Cycle Time - Word, Page: 2ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 64MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Write Cycle Time - Word, Page: 2ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
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CY2309ZXI-1HT |
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Виробник: Infineon Technologies
Description: IC FANOUT BUFFER 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC FANOUT BUFFER 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CY2292FXIT |
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Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS
Frequency - Max: 60MHz, 80MHz
Type: Clock Generator, Fanout Distribution
Input: Clock, Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V, 5V
Ratio - Input:Output: 1:6
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Verified
Description: IC CLOCK GENERATOR 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS
Frequency - Max: 60MHz, 80MHz
Type: Clock Generator, Fanout Distribution
Input: Clock, Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V, 5V
Ratio - Input:Output: 1:6
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Verified
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CY62147EV30LL-45BVXIT |
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Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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CY62147EV30LL-45BVXIT |
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Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 48VFBGA
Packaging: Cut Tape (CT)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 48VFBGA
Packaging: Cut Tape (CT)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
на замовлення 1634 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 418.39 грн |
10+ | 357.54 грн |
25+ | 341.03 грн |
50+ | 308.77 грн |
100+ | 297.89 грн |
250+ | 284.06 грн |
500+ | 269.52 грн |
1000+ | 259.97 грн |