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CY7C63801-PXC CY7C63801-PXC Infineon Technologies download Description: IC USB PERIPHERAL CTRLR 16-DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Function: Controller
Interface: GPIO, SPI
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.5V
Current - Supply: 40mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 16-PDIP
DigiKey Programmable: Not Verified
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CY62256LL-70PXC CY62256LL-70PXC Infineon Technologies CY62256%20%28Jul05%29.pdf description Description: IC SRAM 256KBIT PARALLEL 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-PDIP
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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TLS850F3TUV50BOARDTOBO1 TLS850F3TUV50BOARDTOBO1 Infineon Technologies Infineon-Z8F80607085_TLS850F3TUVXX_Demoboard-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f84ce5c094e35 Description: EVAL BOARD FOR TLS850F3TUV50
Packaging: Box
Voltage - Output: 5V
Voltage - Input: 3V ~ 42V
Current - Output: 500mA
Contents: Board(s)
Regulator Type: Positive Fixed
Utilized IC / Part: TLS850F3TUV50
Channels per IC: 1 - Single
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+6228.75 грн
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IDYH25G200C5XKSA1 IDYH25G200C5XKSA1 Infineon Technologies Description: DIODE SIC 2000V 77A PGTO247U04
Packaging: Tube
Package / Case: TO-247-4 Variant
Mounting Type: Through Hole
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1140pF @ 1V, 100kHz
Current - Average Rectified (Io): 77A
Supplier Device Package: PG-TO247-U04
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 25 A
Current - Reverse Leakage @ Vr: 375 µA @ 2000 V
на замовлення 56 шт:
термін постачання 21-31 дні (днів)
1+1539.33 грн
30+933.03 грн
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CY8CLED164-28PVXI Infineon Technologies Description: PROGRAMMABLE SYSTEM ON A CHIP
Mounting Type: Surface Mount
DigiKey Programmable: Not Verified
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IPZA60R120P7XKSA1 IPZA60R120P7XKSA1 Infineon Technologies Infineon-IPZA60R120P7-DS-v02_00-EN.pdf?fileId=5546d462602a9dc80160454dfa181953 Description: MOSFET N-CH 600V 26A TO247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 8.2A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 410µA
Supplier Device Package: PG-TO247-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V
на замовлення 5920 шт:
термін постачання 21-31 дні (днів)
136+153.21 грн
Мінімальне замовлення: 136
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TLE4274GSV25HTSA2 TLE4274GSV25HTSA2 Infineon Technologies Infineon-TLE4274V33-DS-v02_30-EN.pdf?fileId=5546d46258fc0bc101595f8e72d51f99 Description: IC REG LIN 2.5V 400MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Min/Fixed): 2.5V
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 2V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
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TLE4274GSV25HTSA2 TLE4274GSV25HTSA2 Infineon Technologies Infineon-TLE4274V33-DS-v02_30-EN.pdf?fileId=5546d46258fc0bc101595f8e72d51f99 Description: IC REG LIN 2.5V 400MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Min/Fixed): 2.5V
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 2V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
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BTS700201ESPDAUGHBDTOBO1 BTS700201ESPDAUGHBDTOBO1 Infineon Technologies Description: BTS70020-1ESP DAUGHBD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS70020-1ESP
Platform: Arduino
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+3577.12 грн
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S29GL512T11DHV010 S29GL512T11DHV010 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S29GL512T11DHIV23 S29GL512T11DHIV23 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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CY14B256LA-ZS25XIT CY14B256LA-ZS25XIT Infineon Technologies Infineon-CY14B256LA_256-Kbit_(32_K_8)_nvSRAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd9bf63054 Description: IC NVSRAM 256KBIT PAR 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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CY14B256PA-SFXIT CY14B256PA-SFXIT Infineon Technologies Infineon-CY14C256PA_CY14B256PA_CY14E256PA_256-Kbit_(32_K_8)_SPI_nvSRAM_with_Real_Time_Clock-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec00bf63493 Description: IC NVSRAM 256KBIT SPI 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 40 MHz
Memory Format: NVSRAM
Supplier Device Package: 16-SOIC
Memory Interface: SPI
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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S29GL01GT10FHI013 S29GL01GT10FHI013 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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CY91F522DSBPMC-GTE1 CY91F522DSBPMC-GTE1 Infineon Technologies Infineon-CY91520_Series_32-bit_FR81S_Microcontroller-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda0e215ba3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil Description: IC MCU 32BIT 320KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 32x12b; D/A 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 56
DigiKey Programmable: Not Verified
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CY91F59BCPB-GSE1 CY91F59BCPB-GSE1 Infineon Technologies Description: IC MCU 32B 2.0625MB FLSH 320PBGA
Packaging: Tray
Package / Case: 320-BBGA
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 2.008M x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 32x8/10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 320-PBGA (27x27)
Number of I/O: 156
DigiKey Programmable: Not Verified
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CY91F522DSCPMC-GS-ERE2 CY91F522DSCPMC-GS-ERE2 Infineon Technologies Infineon-CY91520_Series_32-bit_FR81S_Microcontroller-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda0e215ba3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil Description: IC MCU 32BIT 320KB FLASH 80LQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 32x12b; D/A 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 56
DigiKey Programmable: Not Verified
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MB91F59BCPB-GSK5E1 MB91F59BCPB-GSK5E1 Infineon Technologies Description: IC MCU 32B 2.0625MB FLSH 320PBGA
Packaging: Tray
Package / Case: 320-BBGA
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 2.008M x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 32x8/10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 320-PBGA (27x27)
Number of I/O: 156
DigiKey Programmable: Not Verified
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DD800S17H4B2BOSA2 DD800S17H4B2BOSA2 Infineon Technologies Infineon-DD800S17H4_B2-DS-v03_01-EN.pdf?fileId=5546d462525dbac401527df3511e6aa1 Description: DIODE MODULE GP 1700V AGIHMB1301
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Supplier Device Package: AG-IHMB130-1
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 800 A
на замовлення 172 шт:
термін постачання 21-31 дні (днів)
1+69379.74 грн
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DD800S17H4B2BOSA2 DD800S17H4B2BOSA2 Infineon Technologies Infineon-DD800S17H4_B2-DS-v03_01-EN.pdf?fileId=5546d462525dbac401527df3511e6aa1 Description: DIODE MODULE GP 1700V AGIHMB1301
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Supplier Device Package: AG-IHMB130-1
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 800 A
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+60040.15 грн
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CY91F523BSDPMC1-GSE1 CY91F523BSDPMC1-GSE1 Infineon Technologies Infineon-CY91520_Series_32-bit_FR81S_Microcontroller-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda0e215ba3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil Description: IC MCU 32BIT 448KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 448KB (448K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 26x12b; D/A 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 44
DigiKey Programmable: Not Verified
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S6E2CCAHHAGV2000A S6E2CCAHHAGV2000A Infineon Technologies Infineon-FM4_S6E2C_Series_Microcontroller_Datasheet_200_MHz_Arm_Cortex_-M4F_High-Performance_MCU-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edbf4675f42 Description: MM-LEGACY MM
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 120
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IPF019N12NM6ATMA1 IPF019N12NM6ATMA1 Infineon Technologies Infineon-IPF019N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8900bb5701891bb4c9ee0270 Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
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IPF019N12NM6ATMA1 IPF019N12NM6ATMA1 Infineon Technologies Infineon-IPF019N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8900bb5701891bb4c9ee0270 Description: TRENCH >=100V
Packaging: Cut Tape (CT)
на замовлення 390 шт:
термін постачання 21-31 дні (днів)
1+514.16 грн
10+335.09 грн
100+244.38 грн
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SPS02N60C3 SPS02N60C3 Infineon Technologies SPS02N60C3.pdf Description: MOSFET N-CH 650V 1.8A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
на замовлення 975 шт:
термін постачання 21-31 дні (днів)
693+32.18 грн
Мінімальне замовлення: 693
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CG7822AAT Infineon Technologies Description: IC MEMORY
Packaging: Bulk
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CG9080AAT Infineon Technologies Description: IC MEMORY
Packaging: Bulk
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CG8466AAT Infineon Technologies Description: IC MEMORY
Packaging: Bulk
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CG7818AA Infineon Technologies Description: IC MEMORY
Packaging: Bulk
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CG7818AAT Infineon Technologies Description: IC MEMORY
Packaging: Bulk
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CG7822AA Infineon Technologies Description: IC MEMORY
Packaging: Bulk
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CY62187EV30LL-55BAXIT CY62187EV30LL-55BAXIT Infineon Technologies Infineon-CY62187EV30_MoBL_64-Mbit_(4M_x_16)_Static_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebef92d32fb&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 64MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-LFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.7V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-FBGA (8x9.5)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 4M x 16
DigiKey Programmable: Not Verified
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SPD30N08S2-22 SPD30N08S2-22 Infineon Technologies SPD30N08S2-22.pdf Description: MOSFET N-CH 75V 30A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 25A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V
на замовлення 1134 шт:
термін постачання 21-31 дні (днів)
449+46.24 грн
Мінімальне замовлення: 449
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IMT65R022M1HXUMA1 IMT65R022M1HXUMA1 Infineon Technologies Infineon-IMT65R022M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c872bd8d601876f4b265b71bb Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 650 V
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IMT65R022M1HXUMA1 IMT65R022M1HXUMA1 Infineon Technologies Infineon-IMT65R022M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c872bd8d601876f4b265b71bb Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 650 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
1+1037.73 грн
10+702.99 грн
100+535.93 грн
500+500.75 грн
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CY8C4127AZE-S445T CY8C4127AZE-S445T Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-AdditionalTechnicalInformation-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8 Description: IC MCU 32BIT 128KB FLASH 64TQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 54
DigiKey Programmable: Not Verified
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STRVS280X02F Infineon Technologies STRVS280X02F.pdf?t.download=true&u=axiww2 Description: SPD
Packaging: Bulk
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1667+13.13 грн
Мінімальне замовлення: 1667
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IQD063N15NM5CGSCATMA1 IQD063N15NM5CGSCATMA1 Infineon Technologies Infineon-IQD063N15NM5CGSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c919c9f9d0191b78020eb6b3e Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 6.32mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 159µA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
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IQD063N15NM5CGSCATMA1 IQD063N15NM5CGSCATMA1 Infineon Technologies Infineon-IQD063N15NM5CGSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c919c9f9d0191b78020eb6b3e Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 6.32mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 159µA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
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IQD063N15NM5SCATMA1 IQD063N15NM5SCATMA1 Infineon Technologies Infineon-IQD063N15NM5SC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c919c9f9d0191b7814b9a6c5a Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 6.32mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 159µA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
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IQD063N15NM5SCATMA1 IQD063N15NM5SCATMA1 Infineon Technologies Infineon-IQD063N15NM5SC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c919c9f9d0191b7814b9a6c5a Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 6.32mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 159µA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
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IFF600B12ME4B11BOSA1 IFF600B12ME4B11BOSA1 Infineon Technologies Infineon-IFF600B12ME4P_B11-DS-v03_01-EN.pdf?fileId=5546d462602a9dc801602ab2bc49001e Description: IGBT MOD 1200V 600A 20MW ECONO
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-5
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 3 mA
на замовлення 2313 шт:
термін постачання 21-31 дні (днів)
2+14542.00 грн
Мінімальне замовлення: 2
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IPD030N03LF2SATMA1 IPD030N03LF2SATMA1 Infineon Technologies datasheet?p=RFNL20TJ6SFHG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: MOSFET N-CH 30V 160A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 3.05mOhm @ 60A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 40µA
Supplier Device Package: PG-TO252-3-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+31.06 грн
Мінімальне замовлення: 2000
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IPD030N03LF2SATMA1 IPD030N03LF2SATMA1 Infineon Technologies datasheet?p=RFNL20TJ6SFHG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: MOSFET N-CH 30V 160A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 3.05mOhm @ 60A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 40µA
Supplier Device Package: PG-TO252-3-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
3+112.25 грн
10+68.26 грн
100+45.48 грн
500+33.50 грн
1000+30.55 грн
Мінімальне замовлення: 3
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FZ1600R17KF6CB2NOSA1 Infineon Technologies INFNS28627-1.pdf?t.download=true&u=5oefqw Description: FZ1600R17KF6C_B2 - 1700V IGBT MO
Packaging: Bulk
на замовлення 42 шт:
термін постачання 21-31 дні (днів)
1+104345.53 грн
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BAS70B5003 BAS70B5003 Infineon Technologies INFNS09505-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTTKY 70V 70MA SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: PG-SOT23-3-3
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
на замовлення 26925 шт:
термін постачання 21-31 дні (днів)
10377+2.19 грн
Мінімальне замовлення: 10377
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DEMOBOARDITS4075QTOBO1 DEMOBOARDITS4075QTOBO1 Infineon Technologies Infineon-ITS4xxxQ_Demo_Board_User_Guide-UM-v01_00-EN.pdf?fileId=5546d46264a8de7e0164cc970bd837f8 Description: EVAL BOARD FOR ITS4075Q
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: ITS4075Q
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+5253.03 грн
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IRAMS06UP60A-2 Infineon Technologies IRSDS06928-1.pdf?t.download=true&u=5oefqw Description: IRAMS06 - INTELLIGENT POWER MODU
Packaging: Bulk
Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 6 A
Voltage: 600 V
на замовлення 1668 шт:
термін постачання 21-31 дні (днів)
21+994.48 грн
Мінімальне замовлення: 21
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DF1000R17IE4DB2BOSA1 Infineon Technologies INFNS28237-1.pdf?t.download=true&u=5oefqw Description: DF1000R17IE4D_B2 - 1700 V, 1000
Packaging: Bulk
на замовлення 360 шт:
термін постачання 21-31 дні (днів)
1+36374.03 грн
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S99WS128P0010 Infineon Technologies Description: IC FLASH
Packaging: Tray
Technology: FLASH - NOR
Memory Format: FLASH
DigiKey Programmable: Not Verified
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AIMCQ120R020M1TXTMA1 AIMCQ120R020M1TXTMA1 Infineon Technologies Infineon-AIMCQ120R020M1T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01910fe6397a6b18 Description: SIC_DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 116A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 43A, 20V
Power Dissipation (Max): 577W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 13.7mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2667 pF @ 800 V
Qualification: AEC-Q101
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AIMCQ120R020M1TXTMA1 AIMCQ120R020M1TXTMA1 Infineon Technologies Infineon-AIMCQ120R020M1T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01910fe6397a6b18 Description: SIC_DISCRETE
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 116A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 43A, 20V
Power Dissipation (Max): 577W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 13.7mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2667 pF @ 800 V
Qualification: AEC-Q101
на замовлення 387 шт:
термін постачання 21-31 дні (днів)
1+1653.94 грн
10+1225.61 грн
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CY2544QC013T CY2544QC013T Infineon Technologies download Description: IC CLOCK GENERATOR 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Clock Generator
Input: LVCMOS, Crystal
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 4
DigiKey Programmable: Not Verified
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CY2544QC014T CY2544QC014T Infineon Technologies download Description: IC CLOCK GENERATOR 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Clock Generator
Input: LVCMOS, Crystal
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 4
DigiKey Programmable: Not Verified
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CY2545QC010T CY2545QC010T Infineon Technologies Infineon-CY2545_CY2547_Quad_PLL_Programmable_Spread_Spectrum_Clock_Generator_with_Serial_I2C_Interface-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec61b3f3c3b&utm_source=cypress&utm_medium=referral&utm_campaign=202110 Description: IC FANOUT DIST 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Fanout Distribution, Fractional N Synthesizer, Multiplexer, Spread Spectrum Clock Generator
Input: Clock, Crystal
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 2:8
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 4
DigiKey Programmable: Not Verified
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CY2544QC011T CY2544QC011T Infineon Technologies download Description: IC CLOCK GENERATOR 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Clock Generator
Input: LVCMOS, Crystal
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 4
DigiKey Programmable: Not Verified
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CY2544QC016T CY2544QC016T Infineon Technologies download Description: IC CLOCK GENERATOR 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Clock Generator
Input: LVCMOS, Crystal
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 4
DigiKey Programmable: Not Verified
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CY2544QC013 CY2544QC013 Infineon Technologies download Description: IC CLOCK GENERATOR 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Clock Generator
Input: LVCMOS, Crystal
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 4
DigiKey Programmable: Not Verified
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CY2544QC014 CY2544QC014 Infineon Technologies download Description: IC CLOCK GENERATOR 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Clock Generator
Input: LVCMOS, Crystal
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 4
DigiKey Programmable: Not Verified
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CY2545QC010 CY2545QC010 Infineon Technologies Infineon-CY2545_CY2547_Quad_PLL_Programmable_Spread_Spectrum_Clock_Generator_with_Serial_I2C_Interface-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec61b3f3c3b&utm_source=cypress&utm_medium=referral&utm_campaign=202110 Description: IC FANOUT DIST 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Fanout Distribution, Fractional N Synthesizer, Multiplexer, Spread Spectrum Clock Generator
Input: Clock, Crystal
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 2:8
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 4
DigiKey Programmable: Not Verified
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CY7C63801-PXC download
CY7C63801-PXC
Виробник: Infineon Technologies
Description: IC USB PERIPHERAL CTRLR 16-DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Function: Controller
Interface: GPIO, SPI
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.5V
Current - Supply: 40mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 16-PDIP
DigiKey Programmable: Not Verified
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CY62256LL-70PXC description CY62256%20%28Jul05%29.pdf
CY62256LL-70PXC
Виробник: Infineon Technologies
Description: IC SRAM 256KBIT PARALLEL 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-PDIP
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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TLS850F3TUV50BOARDTOBO1 Infineon-Z8F80607085_TLS850F3TUVXX_Demoboard-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f84ce5c094e35
TLS850F3TUV50BOARDTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR TLS850F3TUV50
Packaging: Box
Voltage - Output: 5V
Voltage - Input: 3V ~ 42V
Current - Output: 500mA
Contents: Board(s)
Regulator Type: Positive Fixed
Utilized IC / Part: TLS850F3TUV50
Channels per IC: 1 - Single
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+6228.75 грн
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IDYH25G200C5XKSA1
IDYH25G200C5XKSA1
Виробник: Infineon Technologies
Description: DIODE SIC 2000V 77A PGTO247U04
Packaging: Tube
Package / Case: TO-247-4 Variant
Mounting Type: Through Hole
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1140pF @ 1V, 100kHz
Current - Average Rectified (Io): 77A
Supplier Device Package: PG-TO247-U04
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 25 A
Current - Reverse Leakage @ Vr: 375 µA @ 2000 V
на замовлення 56 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1539.33 грн
30+933.03 грн
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CY8CLED164-28PVXI
Виробник: Infineon Technologies
Description: PROGRAMMABLE SYSTEM ON A CHIP
Mounting Type: Surface Mount
DigiKey Programmable: Not Verified
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IPZA60R120P7XKSA1 Infineon-IPZA60R120P7-DS-v02_00-EN.pdf?fileId=5546d462602a9dc80160454dfa181953
IPZA60R120P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 26A TO247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 8.2A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 410µA
Supplier Device Package: PG-TO247-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V
на замовлення 5920 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
136+153.21 грн
Мінімальне замовлення: 136
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TLE4274GSV25HTSA2 Infineon-TLE4274V33-DS-v02_30-EN.pdf?fileId=5546d46258fc0bc101595f8e72d51f99
TLE4274GSV25HTSA2
Виробник: Infineon Technologies
Description: IC REG LIN 2.5V 400MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Min/Fixed): 2.5V
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 2V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
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TLE4274GSV25HTSA2 Infineon-TLE4274V33-DS-v02_30-EN.pdf?fileId=5546d46258fc0bc101595f8e72d51f99
TLE4274GSV25HTSA2
Виробник: Infineon Technologies
Description: IC REG LIN 2.5V 400MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Min/Fixed): 2.5V
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 2V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
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BTS700201ESPDAUGHBDTOBO1
BTS700201ESPDAUGHBDTOBO1
Виробник: Infineon Technologies
Description: BTS70020-1ESP DAUGHBD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS70020-1ESP
Platform: Arduino
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3577.12 грн
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S29GL512T11DHV010 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
S29GL512T11DHV010
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S29GL512T11DHIV23 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
S29GL512T11DHIV23
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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CY14B256LA-ZS25XIT Infineon-CY14B256LA_256-Kbit_(32_K_8)_nvSRAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd9bf63054
CY14B256LA-ZS25XIT
Виробник: Infineon Technologies
Description: IC NVSRAM 256KBIT PAR 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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CY14B256PA-SFXIT Infineon-CY14C256PA_CY14B256PA_CY14E256PA_256-Kbit_(32_K_8)_SPI_nvSRAM_with_Real_Time_Clock-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec00bf63493
CY14B256PA-SFXIT
Виробник: Infineon Technologies
Description: IC NVSRAM 256KBIT SPI 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 40 MHz
Memory Format: NVSRAM
Supplier Device Package: 16-SOIC
Memory Interface: SPI
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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S29GL01GT10FHI013 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
S29GL01GT10FHI013
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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CY91F522DSBPMC-GTE1 Infineon-CY91520_Series_32-bit_FR81S_Microcontroller-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda0e215ba3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil
CY91F522DSBPMC-GTE1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 320KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 32x12b; D/A 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 56
DigiKey Programmable: Not Verified
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CY91F59BCPB-GSE1
CY91F59BCPB-GSE1
Виробник: Infineon Technologies
Description: IC MCU 32B 2.0625MB FLSH 320PBGA
Packaging: Tray
Package / Case: 320-BBGA
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 2.008M x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 32x8/10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 320-PBGA (27x27)
Number of I/O: 156
DigiKey Programmable: Not Verified
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CY91F522DSCPMC-GS-ERE2 Infineon-CY91520_Series_32-bit_FR81S_Microcontroller-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda0e215ba3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil
CY91F522DSCPMC-GS-ERE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 320KB FLASH 80LQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 32x12b; D/A 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 56
DigiKey Programmable: Not Verified
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MB91F59BCPB-GSK5E1
MB91F59BCPB-GSK5E1
Виробник: Infineon Technologies
Description: IC MCU 32B 2.0625MB FLSH 320PBGA
Packaging: Tray
Package / Case: 320-BBGA
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 2.008M x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 32x8/10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 320-PBGA (27x27)
Number of I/O: 156
DigiKey Programmable: Not Verified
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DD800S17H4B2BOSA2 Infineon-DD800S17H4_B2-DS-v03_01-EN.pdf?fileId=5546d462525dbac401527df3511e6aa1
DD800S17H4B2BOSA2
Виробник: Infineon Technologies
Description: DIODE MODULE GP 1700V AGIHMB1301
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Supplier Device Package: AG-IHMB130-1
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 800 A
на замовлення 172 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+69379.74 грн
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DD800S17H4B2BOSA2 Infineon-DD800S17H4_B2-DS-v03_01-EN.pdf?fileId=5546d462525dbac401527df3511e6aa1
DD800S17H4B2BOSA2
Виробник: Infineon Technologies
Description: DIODE MODULE GP 1700V AGIHMB1301
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Supplier Device Package: AG-IHMB130-1
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 800 A
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+60040.15 грн
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CY91F523BSDPMC1-GSE1 Infineon-CY91520_Series_32-bit_FR81S_Microcontroller-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda0e215ba3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil
CY91F523BSDPMC1-GSE1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 448KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 448KB (448K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 26x12b; D/A 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 44
DigiKey Programmable: Not Verified
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S6E2CCAHHAGV2000A Infineon-FM4_S6E2C_Series_Microcontroller_Datasheet_200_MHz_Arm_Cortex_-M4F_High-Performance_MCU-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edbf4675f42
S6E2CCAHHAGV2000A
Виробник: Infineon Technologies
Description: MM-LEGACY MM
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 120
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IPF019N12NM6ATMA1 Infineon-IPF019N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8900bb5701891bb4c9ee0270
IPF019N12NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
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IPF019N12NM6ATMA1 Infineon-IPF019N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8900bb5701891bb4c9ee0270
IPF019N12NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
на замовлення 390 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+514.16 грн
10+335.09 грн
100+244.38 грн
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SPS02N60C3 SPS02N60C3.pdf
SPS02N60C3
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 1.8A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
на замовлення 975 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
693+32.18 грн
Мінімальне замовлення: 693
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CG7822AAT
Виробник: Infineon Technologies
Description: IC MEMORY
Packaging: Bulk
товару немає в наявності
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CG9080AAT
Виробник: Infineon Technologies
Description: IC MEMORY
Packaging: Bulk
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CG8466AAT
Виробник: Infineon Technologies
Description: IC MEMORY
Packaging: Bulk
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CG7818AA
Виробник: Infineon Technologies
Description: IC MEMORY
Packaging: Bulk
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CG7818AAT
Виробник: Infineon Technologies
Description: IC MEMORY
Packaging: Bulk
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CG7822AA
Виробник: Infineon Technologies
Description: IC MEMORY
Packaging: Bulk
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CY62187EV30LL-55BAXIT Infineon-CY62187EV30_MoBL_64-Mbit_(4M_x_16)_Static_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebef92d32fb&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62187EV30LL-55BAXIT
Виробник: Infineon Technologies
Description: IC SRAM 64MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-LFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.7V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-FBGA (8x9.5)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 4M x 16
DigiKey Programmable: Not Verified
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SPD30N08S2-22 SPD30N08S2-22.pdf
SPD30N08S2-22
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 30A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 25A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V
на замовлення 1134 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
449+46.24 грн
Мінімальне замовлення: 449
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IMT65R022M1HXUMA1 Infineon-IMT65R022M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c872bd8d601876f4b265b71bb
IMT65R022M1HXUMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 650 V
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IMT65R022M1HXUMA1 Infineon-IMT65R022M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c872bd8d601876f4b265b71bb
IMT65R022M1HXUMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 650 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1037.73 грн
10+702.99 грн
100+535.93 грн
500+500.75 грн
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CY8C4127AZE-S445T Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-AdditionalTechnicalInformation-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8
CY8C4127AZE-S445T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64TQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 54
DigiKey Programmable: Not Verified
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STRVS280X02F STRVS280X02F.pdf?t.download=true&u=axiww2
Виробник: Infineon Technologies
Description: SPD
Packaging: Bulk
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1667+13.13 грн
Мінімальне замовлення: 1667
В кошику  од. на суму  грн.
IQD063N15NM5CGSCATMA1 Infineon-IQD063N15NM5CGSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c919c9f9d0191b78020eb6b3e
IQD063N15NM5CGSCATMA1
Виробник: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 6.32mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 159µA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
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IQD063N15NM5CGSCATMA1 Infineon-IQD063N15NM5CGSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c919c9f9d0191b78020eb6b3e
IQD063N15NM5CGSCATMA1
Виробник: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 6.32mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 159µA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
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IQD063N15NM5SCATMA1 Infineon-IQD063N15NM5SC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c919c9f9d0191b7814b9a6c5a
IQD063N15NM5SCATMA1
Виробник: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 6.32mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 159µA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
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IQD063N15NM5SCATMA1 Infineon-IQD063N15NM5SC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c919c9f9d0191b7814b9a6c5a
IQD063N15NM5SCATMA1
Виробник: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 6.32mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 159µA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
товару немає в наявності
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IFF600B12ME4B11BOSA1 Infineon-IFF600B12ME4P_B11-DS-v03_01-EN.pdf?fileId=5546d462602a9dc801602ab2bc49001e
IFF600B12ME4B11BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 600A 20MW ECONO
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-5
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 3 mA
на замовлення 2313 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+14542.00 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPD030N03LF2SATMA1 datasheet?p=RFNL20TJ6SFHG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
IPD030N03LF2SATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 160A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 3.05mOhm @ 60A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 40µA
Supplier Device Package: PG-TO252-3-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+31.06 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IPD030N03LF2SATMA1 datasheet?p=RFNL20TJ6SFHG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
IPD030N03LF2SATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 160A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 3.05mOhm @ 60A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 40µA
Supplier Device Package: PG-TO252-3-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+112.25 грн
10+68.26 грн
100+45.48 грн
500+33.50 грн
1000+30.55 грн
Мінімальне замовлення: 3
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FZ1600R17KF6CB2NOSA1 INFNS28627-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: FZ1600R17KF6C_B2 - 1700V IGBT MO
Packaging: Bulk
на замовлення 42 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+104345.53 грн
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BAS70B5003 INFNS09505-1.pdf?t.download=true&u=5oefqw
BAS70B5003
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 70V 70MA SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: PG-SOT23-3-3
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
на замовлення 26925 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10377+2.19 грн
Мінімальне замовлення: 10377
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DEMOBOARDITS4075QTOBO1 Infineon-ITS4xxxQ_Demo_Board_User_Guide-UM-v01_00-EN.pdf?fileId=5546d46264a8de7e0164cc970bd837f8
DEMOBOARDITS4075QTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR ITS4075Q
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: ITS4075Q
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+5253.03 грн
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IRAMS06UP60A-2 IRSDS06928-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: IRAMS06 - INTELLIGENT POWER MODU
Packaging: Bulk
Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 6 A
Voltage: 600 V
на замовлення 1668 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
21+994.48 грн
Мінімальне замовлення: 21
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DF1000R17IE4DB2BOSA1 INFNS28237-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: DF1000R17IE4D_B2 - 1700 V, 1000
Packaging: Bulk
на замовлення 360 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+36374.03 грн
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S99WS128P0010
Виробник: Infineon Technologies
Description: IC FLASH
Packaging: Tray
Technology: FLASH - NOR
Memory Format: FLASH
DigiKey Programmable: Not Verified
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AIMCQ120R020M1TXTMA1 Infineon-AIMCQ120R020M1T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01910fe6397a6b18
AIMCQ120R020M1TXTMA1
Виробник: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 116A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 43A, 20V
Power Dissipation (Max): 577W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 13.7mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2667 pF @ 800 V
Qualification: AEC-Q101
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AIMCQ120R020M1TXTMA1 Infineon-AIMCQ120R020M1T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01910fe6397a6b18
AIMCQ120R020M1TXTMA1
Виробник: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 116A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 43A, 20V
Power Dissipation (Max): 577W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 13.7mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2667 pF @ 800 V
Qualification: AEC-Q101
на замовлення 387 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1653.94 грн
10+1225.61 грн
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CY2544QC013T download
CY2544QC013T
Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Clock Generator
Input: LVCMOS, Crystal
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 4
DigiKey Programmable: Not Verified
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CY2544QC014T download
CY2544QC014T
Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Clock Generator
Input: LVCMOS, Crystal
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 4
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
CY2545QC010T Infineon-CY2545_CY2547_Quad_PLL_Programmable_Spread_Spectrum_Clock_Generator_with_Serial_I2C_Interface-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec61b3f3c3b&utm_source=cypress&utm_medium=referral&utm_campaign=202110
CY2545QC010T
Виробник: Infineon Technologies
Description: IC FANOUT DIST 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Fanout Distribution, Fractional N Synthesizer, Multiplexer, Spread Spectrum Clock Generator
Input: Clock, Crystal
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 2:8
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 4
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY2544QC011T download
CY2544QC011T
Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Clock Generator
Input: LVCMOS, Crystal
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 4
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY2544QC016T download
CY2544QC016T
Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Clock Generator
Input: LVCMOS, Crystal
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 4
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY2544QC013 download
CY2544QC013
Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Clock Generator
Input: LVCMOS, Crystal
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 4
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY2544QC014 download
CY2544QC014
Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Clock Generator
Input: LVCMOS, Crystal
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 4
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY2545QC010 Infineon-CY2545_CY2547_Quad_PLL_Programmable_Spread_Spectrum_Clock_Generator_with_Serial_I2C_Interface-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec61b3f3c3b&utm_source=cypress&utm_medium=referral&utm_campaign=202110
CY2545QC010
Виробник: Infineon Technologies
Description: IC FANOUT DIST 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Fanout Distribution, Fractional N Synthesizer, Multiplexer, Spread Spectrum Clock Generator
Input: Clock, Crystal
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 2:8
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 4
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
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