Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (119485) > Сторінка 749 з 1992

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IRSM515-055DA2 Infineon Technologies irsm505-055.pdf?fileId=5546d462533600a40153567bf5dc287d Description: IC HALF BRIDGE DRIVER 2.4A 23DIP
Packaging: Tube
Features: Bootstrap Circuit
Package / Case: 32-PowerDIP Module, 23 Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 1.3Ohm
Applications: AC Motors
Current - Output / Channel: 2.4A
Current - Peak Output: 15A
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 23-DIP
Fault Protection: UVLO
Load Type: Inductive
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CYPD822952LQXITAUMA1 Infineon Technologies Description: USB-C PC
Packaging: Tape & Reel (TR)
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CYPD822952LQXIAQLA1 Infineon Technologies Description: USB-C PC
Packaging: Tray
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EVAL2ED21814TOBO1 EVAL2ED21814TOBO1 Infineon Technologies UM_General%20purpose%20basic%202ED21814S06F_Final.pdf Description: EVAL2ED21814TOBO1
Packaging: Box
Contents: Board(s)
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+3880.37 грн
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IRFPW4468PBFXKSA1 IRFPW4468PBFXKSA1 Infineon Technologies Infineon-IRFPW4468PBF-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194d130dba01e47 Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 180A, 10V
Power Dissipation (Max): 3.8W (Ta), 517W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 540 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 29000 pF @ 50 V
на замовлення 228 шт:
термін постачання 21-31 дні (днів)
1+372.39 грн
30+201.95 грн
120+167.52 грн
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EVALFS33MR12W1M1HM5TOBO1 EVALFS33MR12W1M1HM5TOBO1 Infineon Technologies UG2024-01_EVAL-FS33MR12W1M1HM5_Revision1.0.pdf Description: EVALFS33MR12W1M1HM5TOBO1
Packaging: Box
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+169032.41 грн
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BTG70020A1ESWDBTOBO1 BTG70020A1ESWDBTOBO1 Infineon Technologies Description: BTG70020A-1ESW DB
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTG70020A-1ESW
Platform: Arduino
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+3486.08 грн
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SAF-XE164K-24F66L AC SAF-XE164K-24F66L AC Infineon Technologies XE164_V2.1_Aug2008.pdf Description: IC MCU 16BIT 192KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 192KB (192K x 8)
RAM Size: 24K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 11x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 75
DigiKey Programmable: Not Verified
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XE164F24F66LACFXQMA1 XE164F24F66LACFXQMA1 Infineon Technologies XE164_V2.1_Aug2008.pdf Description: IC MCU 16BIT 192KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 192KB (192K x 8)
RAM Size: 24K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 75
DigiKey Programmable: Not Verified
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XE164F48F66LACFXUMA1 XE164F48F66LACFXUMA1 Infineon Technologies XE164_V2.1_Aug2008.pdf Description: IC MCU 16BIT 384KB FLASH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 75
DigiKey Programmable: Not Verified
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XE164F24F66LACFXUMA1 XE164F24F66LACFXUMA1 Infineon Technologies XE164_V2.1_Aug2008.pdf Description: IC MCU 16BIT 192KB FLASH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 192KB (192K x 8)
RAM Size: 24K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 75
DigiKey Programmable: Not Verified
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XE164G24F66LACFXUMA1 XE164G24F66LACFXUMA1 Infineon Technologies XE164_V2.1_Aug2008.pdf Description: IC MCU 16BIT 192KB FLASH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 192KB (192K x 8)
RAM Size: 24K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 11x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 75
DigiKey Programmable: Not Verified
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XE164H72F66LACFXQMA1 XE164H72F66LACFXQMA1 Infineon Technologies XE164_V2.1_Aug2008.pdf Description: IC MCU 16BIT 576KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 75
DigiKey Programmable: Not Verified
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XC2268M72F66LAAFXUMA1 XC2268M72F66LAAFXUMA1 Infineon Technologies XC226xM.pdf Description: IC MCU 16BIT 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 4x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 76
DigiKey Programmable: Not Verified
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IRFH7440TRPBF IRFH7440TRPBF Infineon Technologies irfh7440pbf.pdf?fileId=5546d462533600a40153561f0e821eed Description: MOSFET N-CH 40V 85A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4574 pF @ 25 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
4000+32.94 грн
Мінімальне замовлення: 4000
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IRFH7440TRPBF IRFH7440TRPBF Infineon Technologies irfh7440pbf.pdf?fileId=5546d462533600a40153561f0e821eed Description: MOSFET N-CH 40V 85A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4574 pF @ 25 V
на замовлення 6493 шт:
термін постачання 21-31 дні (днів)
3+125.17 грн
10+76.54 грн
100+51.39 грн
500+38.08 грн
1000+34.82 грн
2000+32.38 грн
Мінімальне замовлення: 3
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IRGS6B60KPBF IRGS6B60KPBF Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT NPT 600V 13A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
Supplier Device Package: D2PAK
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/215ns
Switching Energy: 110µJ (on), 135µJ (off)
Test Condition: 400V, 5A, 100Ohm, 15V
Gate Charge: 18.2 nC
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 26 A
Power - Max: 90 W
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AUIRF8739L2TR AUIRF8739L2TR Infineon Technologies auirf8739l2.pdf?fileId=5546d462533600a4015355b0e3241416 Description: MOSFET N-CH 40V 57A DIRECTFET
Packaging: Bulk
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 545A (Tc)
Rds On (Max) @ Id, Vgs: 0.6mOhm @ 195A, 10V
Power Dissipation (Max): 3.8W (Ta), 340W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 40V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 562 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17890 pF @ 25 V
Qualification: AEC-Q101
на замовлення 12443 шт:
термін постачання 21-31 дні (днів)
68+334.02 грн
Мінімальне замовлення: 68
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IRF7424TR IRF7424TR Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET P-CH 30V 11A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4030 pF @ 25 V
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CY8C4046LQI-T451 CY8C4046LQI-T451 Infineon Technologies Infineon-PSoC_4000T_MCU_datasheet-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c8a44f57b018a799f5fb53b5d Description: IC MCU 32BIT 64KB FLASH 16UFQFN
Packaging: Tray
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, Microwire, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, POR, PWM, WDT
Supplier Device Package: 16-QFN (3x3)
Number of I/O: 11
на замовлення 890 шт:
термін постачання 21-31 дні (днів)
2+255.04 грн
10+185.48 грн
25+170.35 грн
100+144.29 грн
490+132.51 грн
Мінімальне замовлення: 2
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EVALTDA3880718VOUTTOBO1 EVALTDA3880718VOUTTOBO1 Infineon Technologies Infineon-Evaluation_board_TDA38807_P1V8_user_guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190e3af200e5efd Description: EVAL BOARD FOR TDA38807
Packaging: Box
Voltage - Output: 1.8V
Voltage - Input: 12V
Current - Output: 6A
Contents: Board(s)
Regulator Topology: Buck
Utilized IC / Part: TDA38807
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+3971.12 грн
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TLE92783BQXV33XUMA1 Infineon Technologies Infineon-TLE9278-3BQX%20V33-DataSheet-v01_05-EN.pdf?fileId=5546d462689a790c0168c75d4d546425 Description: BODY SYSTEM ICS
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 3.3V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 4.5V ~ 28V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Converter, Automotive
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Qualification: AEC-Q100
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TLE92783BQXV33XUMA1 Infineon Technologies Infineon-TLE9278-3BQX%20V33-DataSheet-v01_05-EN.pdf?fileId=5546d462689a790c0168c75d4d546425 Description: BODY SYSTEM ICS
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 3.3V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 4.5V ~ 28V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Converter, Automotive
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2056 шт:
термін постачання 21-31 дні (днів)
1+670.46 грн
10+501.89 грн
25+465.94 грн
100+400.18 грн
250+382.51 грн
500+371.85 грн
1000+357.13 грн
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TLE92783BQXXUMA1 TLE92783BQXXUMA1 Infineon Technologies Infineon-TLE9278-3BQX-DataSheet-v01_05-EN.pdf?fileId=5546d462689a790c0168c738ae356420 Description: BODY SYSTEM ICS
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 4.5V ~ 28V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Converter, Automotive
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Qualification: AEC-Q100
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BFR35AP BFR35AP Infineon Technologies INFNS29989-1.pdf?t.download=true&u=5oefqw Description: BFR35 - LOW-NOISE SI TRANSISTORS
Packaging: Bulk
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AIMCQ120R120M1TXTMA1 AIMCQ120R120M1TXTMA1 Infineon Technologies Infineon-AIMCQ120R120M1T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01910fe652966b27 Description: SIC_DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 7A, 20V
Power Dissipation (Max): 161W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 2.2mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 800 V
Qualification: AEC-Q101
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AIMCQ120R120M1TXTMA1 AIMCQ120R120M1TXTMA1 Infineon Technologies Infineon-AIMCQ120R120M1T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01910fe652966b27 Description: SIC_DISCRETE
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 7A, 20V
Power Dissipation (Max): 161W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 2.2mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 800 V
Qualification: AEC-Q101
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AIMBG120R120M1XTMA1 AIMBG120R120M1XTMA1 Infineon Technologies Infineon-AIMBG120R120M1-DataSheet-v01_30-EN.pdf?fileId=8ac78c8c8fc2dd9c018fe1b113965b24 Description: SICFET N-CH 1200V 22A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 7A, 20V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 2.2mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 800 V
Qualification: AEC-Q101
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AIMZHN120R120M1TXKSA1 AIMZHN120R120M1TXKSA1 Infineon Technologies Infineon-AIMZHN120R120M1T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c68fc61634aa1 Description: SIC_DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 7A, 20V
Power Dissipation (Max): 133W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 2.2mA
Supplier Device Package: PG-TO247-4-14
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 800 V
Qualification: AEC-Q101
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ISC079N15NM6ATMA1 ISC079N15NM6ATMA1 Infineon Technologies Infineon-ISC079N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a01907753460f7058 Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.8A (Ta), 95A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 36A, 15V
Power Dissipation (Max): 3W (Ta), 165W (Tc)
Vgs(th) (Max) @ Id: 4V @ 77µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 75 V
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ISC079N15NM6ATMA1 ISC079N15NM6ATMA1 Infineon Technologies Infineon-ISC079N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a01907753460f7058 Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.8A (Ta), 95A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 36A, 15V
Power Dissipation (Max): 3W (Ta), 165W (Tc)
Vgs(th) (Max) @ Id: 4V @ 77µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 75 V
на замовлення 4622 шт:
термін постачання 21-31 дні (днів)
2+300.42 грн
10+204.24 грн
100+158.32 грн
500+125.21 грн
1000+116.17 грн
2000+115.17 грн
Мінімальне замовлення: 2
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IMW65R026M2HXKSA1 IMW65R026M2HXKSA1 Infineon Technologies IMW65R026M2HXKSA1.pdf Description: IMW65R026M2HXKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 34.5A, 20V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 7mA
Supplier Device Package: PG-TO247-3-40
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1499 pF @ 400 V
на замовлення 415 шт:
термін постачання 21-31 дні (днів)
1+900.47 грн
30+523.16 грн
120+447.65 грн
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CYW43438LKUBGT Infineon Technologies Description: WI-FI COMBO IOT
Packaging: Tape & Reel (TR)
Package / Case: 63-UFBGA, WLBGA
Sensitivity: -99dBm
Mounting Type: Surface Mount
Memory Size: 640kB ROM, 512kB SRAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 21dBm
Protocol: 802.11b/g/n, Bluetooth v4.0
Current - Receiving: 37mA ~ 41mA
Data Rate (Max): 54Mbps
Current - Transmitting: 260mA ~ 320mA
Supplier Device Package: 63-WLBGA (2.87x4.87)
GPIO: 5
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, SPI, UART
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IGLD65R110D2AUMA1 IGLD65R110D2AUMA1 Infineon Technologies infineon-igld65r110d2-datasheet-en.pdf Description: GANFET N-CH 650V 14A 8LDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-LDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 4A
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.3mA
Supplier Device Package: PG-LSON-8-2
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 400 V
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IGLD65R110D2AUMA1 IGLD65R110D2AUMA1 Infineon Technologies infineon-igld65r110d2-datasheet-en.pdf Description: GANFET N-CH 650V 14A 8LDFN
Packaging: Cut Tape (CT)
Package / Case: 8-LDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 4A
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.3mA
Supplier Device Package: PG-LSON-8-2
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 400 V
на замовлення 2557 шт:
термін постачання 21-31 дні (днів)
1+318.41 грн
10+202.58 грн
100+143.36 грн
500+116.06 грн
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CY9BF404RAPMC-G-UNE2 CY9BF404RAPMC-G-UNE2 Infineon Technologies download Description: IC MCU 32BIT 256KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 100
DigiKey Programmable: Not Verified
на замовлення 840 шт:
термін постачання 21-31 дні (днів)
1+484.26 грн
10+361.54 грн
25+335.24 грн
84+295.26 грн
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S29GL128P90FAIR12 S29GL128P90FAIR12 Infineon Technologies 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
400+392.49 грн
Мінімальне замовлення: 400
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S29GL128P90FAIR12 S29GL128P90FAIR12 Infineon Technologies 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Cut Tape (CT)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
1+521.82 грн
10+445.91 грн
25+425.20 грн
50+384.92 грн
100+371.31 грн
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KITXMC7200MC1TOBO1 KITXMC7200MC1TOBO1 Infineon Technologies Infineon-KIT_XMC7200_MC1_product_brief-ProductBrief-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192e53ce9337b6a Description: KITXMC7200MC1TOBO1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: XMC7200
Primary Attributes: Isolated
Embedded: Yes, MCU
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+38984.43 грн
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KITXMC72EVK KITXMC72EVK Infineon Technologies Infineon-KIT_XMC72_EVK_XMC7200-evaluation-kit-quick-start-guide-GettingStarted-v01_00-EN.pdf?fileId=8ac78c8c8412f8d301842e60df937b6f Description: EVALUATION BOARD WHICH CARRIES A
Packaging: Bulk
Mounting Type: Fixed
Type: MCU
Contents: Board(s), Cable(s), Power Supply, Accessories
Core Processor: ARM® Cortex®-M0, Cortex®-M7
Utilized IC / Part: XMC7200
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XMC7241SCQ040XAAXUMA1 XMC7241SCQ040XAAXUMA1 Infineon Technologies Orderable_Part_Number_OPN_Translation_Table_Web.pdf Description: XMC1000
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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XMC7200-F176K8384AA XMC7200-F176K8384AA Infineon Technologies Infineon-XMC-7200-Datasheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8412f8d30184443173374425 Description: IC MCU 32BIT 8.18MB 176LQFP
Packaging: Tray
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 350MHz
Program Memory Size: 8.188MB (8.188M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
Data Converters: A/D 81x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, FIFO, I2C, IrDA, MMC/SD/SDIO, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 176-TEQFP (24x24)
Number of I/O: 148
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S25FL512SDSMFB010 S25FL512SDSMFB010 Infineon Technologies Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53 Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 235 шт:
термін постачання 21-31 дні (днів)
1+851.18 грн
10+760.67 грн
25+737.05 грн
40+680.38 грн
80+663.77 грн
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S25FL512SAGMFVR13 S25FL512SAGMFVR13 Infineon Technologies Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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BB 659C-02V E7902 BB 659C-02V E7902 Infineon Technologies bb639c_bb659cseries.pdf Description: DIODE VAR CAP 30V 20MA SC-79
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 15.3
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BB 659C-02V E7908 BB 659C-02V E7908 Infineon Technologies bb639c_bb659cseries.pdf Description: DIODE VAR CAP 30V 20MA SC-79
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 15.3
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BB 664-02V E7902 BB 664-02V E7902 Infineon Technologies bb644_bb664series.pdf Description: DIODE VAR CAP 30V 20MA SC-79
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 17.8
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BB 689-02V E7902 BB 689-02V E7902 Infineon Technologies bb669_bb689series.pdf Description: DIODE VAR CAP 30V 20MA SC-79
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 23.2
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BB 689-02V E7908 BB 689-02V E7908 Infineon Technologies bb669_bb689series.pdf Description: DIODE VAR CAP 30V 20MA SC-79
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 23.2
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SKP02N60XKSA1 SKP02N60XKSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT NPT 600V 6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 130 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2A
Supplier Device Package: PG-TO220-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 20ns/259ns
Switching Energy: 64µJ
Test Condition: 400V, 2A, 118Ohm, 15V
Gate Charge: 14 nC
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 30 W
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SGD02N60BUMA1 SGD02N60BUMA1 Infineon Technologies SGP_D02N60_Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4283d5e3da6 Description: IGBT NPT 600V 6A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2A
Supplier Device Package: PG-TO252-3-11
IGBT Type: NPT
Td (on/off) @ 25°C: 20ns/259ns
Switching Energy: 64µJ
Test Condition: 400V, 2A, 118Ohm, 15V
Gate Charge: 14 nC
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 30 W
на замовлення 25404 шт:
термін постачання 21-31 дні (днів)
317+63.72 грн
Мінімальне замовлення: 317
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AUIRGR4045D AUIRGR4045D Infineon Technologies auirgr4045d.pdf?fileId=5546d462533600a4015355ba8960152f Description: IGBT TRENCH 600V 12A TO-252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Supplier Device Package: TO-252AA
IGBT Type: Trench
Td (on/off) @ 25°C: 27ns/75ns
Switching Energy: 56µJ (on), 122µJ (off)
Test Condition: 400V, 6A, 47Ohm, 15V
Gate Charge: 19.5 nC
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 77 W
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IRGR4045DPBF IRGR4045DPBF Infineon Technologies IRGR4045DPbF.pdf Description: IGBT TRENCH 600V 12A TO-252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Supplier Device Package: TO-252AA (DPAK)
IGBT Type: Trench
Td (on/off) @ 25°C: 27ns/75ns
Switching Energy: 56µJ (on), 122µJ (off)
Test Condition: 400V, 6A, 47Ohm, 15V
Gate Charge: 19.5 nC
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 77 W
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IRS2004PBF IRS2004PBF Infineon Technologies irs2004pbf.pdf?fileId=5546d462533600a401535675b86b2782 Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
на замовлення 2142 шт:
термін постачання 21-31 дні (днів)
136+148.65 грн
Мінімальне замовлення: 136
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IRS2003SPBF IRS2003SPBF Infineon Technologies irs2003pbf.pdf?fileId=5546d462533600a401535675afec2780 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
на замовлення 260 шт:
термін постачання 21-31 дні (днів)
260+76.46 грн
Мінімальне замовлення: 260
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FZ1800R45HL4S7BPSA1 FZ1800R45HL4S7BPSA1 Infineon Technologies Infineon-FZ1800R45HL4_S7-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97d2610057b Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 25V, 1800A
NTC Thermistor: No
Supplier Device Package: AG-IHVB190
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Power - Max: 4000000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 297 nF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+195465.86 грн
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FZ1800R17HE4B9HOSA2 FZ1800R17HE4B9HOSA2 Infineon Technologies Infineon-FZ1800R17HE4_B9-DS-v02_02-EN.pdf?fileId=db3a30433e4143bd013e4717b1fe4244 Description: IGBT MODULE 1700V 1800A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1800A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 11500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 145 nF @ 25 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+79477.20 грн
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FZ1800R17HE4B9HOSA2 FZ1800R17HE4B9HOSA2 Infineon Technologies Infineon-FZ1800R17HE4_B9-DS-v02_02-EN.pdf?fileId=db3a30433e4143bd013e4717b1fe4244 Description: IGBT MODULE 1700V 1800A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1800A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 11500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 145 nF @ 25 V
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SAX-XC878-16FFA 5V AC SAX-XC878-16FFA 5V AC Infineon Technologies Infineon-XC87X-DS-v01_05-en.pdf?folderId=db3a304412b407950112b40c497b0af6&fileId=db3a30432239cccd01231293d56908b1&ack=t Description: IC MCU 8BIT 64KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 27MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 3.25K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: SPI, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-4
Number of I/O: 40
DigiKey Programmable: Not Verified
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SAX-XC878CM-13FFA 5V AC SAX-XC878CM-13FFA 5V AC Infineon Technologies Infineon-XC87X-DS-v01_05-en.pdf?folderId=db3a304412b407950112b40c497b0af6&fileId=db3a30432239cccd01231293d56908b1&ack=t Description: IC MCU 8BIT 52KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 27MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 3.25K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, SPI, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-4
Number of I/O: 40
DigiKey Programmable: Not Verified
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IRSM515-055DA2 irsm505-055.pdf?fileId=5546d462533600a40153567bf5dc287d
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 2.4A 23DIP
Packaging: Tube
Features: Bootstrap Circuit
Package / Case: 32-PowerDIP Module, 23 Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 1.3Ohm
Applications: AC Motors
Current - Output / Channel: 2.4A
Current - Peak Output: 15A
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 23-DIP
Fault Protection: UVLO
Load Type: Inductive
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CYPD822952LQXITAUMA1
Виробник: Infineon Technologies
Description: USB-C PC
Packaging: Tape & Reel (TR)
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CYPD822952LQXIAQLA1
Виробник: Infineon Technologies
Description: USB-C PC
Packaging: Tray
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EVAL2ED21814TOBO1 UM_General%20purpose%20basic%202ED21814S06F_Final.pdf
EVAL2ED21814TOBO1
Виробник: Infineon Technologies
Description: EVAL2ED21814TOBO1
Packaging: Box
Contents: Board(s)
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3880.37 грн
В кошику  од. на суму  грн.
IRFPW4468PBFXKSA1 Infineon-IRFPW4468PBF-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194d130dba01e47
IRFPW4468PBFXKSA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 180A, 10V
Power Dissipation (Max): 3.8W (Ta), 517W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 540 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 29000 pF @ 50 V
на замовлення 228 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+372.39 грн
30+201.95 грн
120+167.52 грн
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EVALFS33MR12W1M1HM5TOBO1 UG2024-01_EVAL-FS33MR12W1M1HM5_Revision1.0.pdf
EVALFS33MR12W1M1HM5TOBO1
Виробник: Infineon Technologies
Description: EVALFS33MR12W1M1HM5TOBO1
Packaging: Box
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+169032.41 грн
В кошику  од. на суму  грн.
BTG70020A1ESWDBTOBO1
BTG70020A1ESWDBTOBO1
Виробник: Infineon Technologies
Description: BTG70020A-1ESW DB
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTG70020A-1ESW
Platform: Arduino
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3486.08 грн
В кошику  од. на суму  грн.
SAF-XE164K-24F66L AC XE164_V2.1_Aug2008.pdf
SAF-XE164K-24F66L AC
Виробник: Infineon Technologies
Description: IC MCU 16BIT 192KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 192KB (192K x 8)
RAM Size: 24K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 11x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 75
DigiKey Programmable: Not Verified
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XE164F24F66LACFXQMA1 XE164_V2.1_Aug2008.pdf
XE164F24F66LACFXQMA1
Виробник: Infineon Technologies
Description: IC MCU 16BIT 192KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 192KB (192K x 8)
RAM Size: 24K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 75
DigiKey Programmable: Not Verified
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XE164F48F66LACFXUMA1 XE164_V2.1_Aug2008.pdf
XE164F48F66LACFXUMA1
Виробник: Infineon Technologies
Description: IC MCU 16BIT 384KB FLASH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 75
DigiKey Programmable: Not Verified
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XE164F24F66LACFXUMA1 XE164_V2.1_Aug2008.pdf
XE164F24F66LACFXUMA1
Виробник: Infineon Technologies
Description: IC MCU 16BIT 192KB FLASH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 192KB (192K x 8)
RAM Size: 24K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 75
DigiKey Programmable: Not Verified
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XE164G24F66LACFXUMA1 XE164_V2.1_Aug2008.pdf
XE164G24F66LACFXUMA1
Виробник: Infineon Technologies
Description: IC MCU 16BIT 192KB FLASH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 192KB (192K x 8)
RAM Size: 24K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 11x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 75
DigiKey Programmable: Not Verified
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XE164H72F66LACFXQMA1 XE164_V2.1_Aug2008.pdf
XE164H72F66LACFXQMA1
Виробник: Infineon Technologies
Description: IC MCU 16BIT 576KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 75
DigiKey Programmable: Not Verified
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XC2268M72F66LAAFXUMA1 XC226xM.pdf
XC2268M72F66LAAFXUMA1
Виробник: Infineon Technologies
Description: IC MCU 16BIT 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 4x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 76
DigiKey Programmable: Not Verified
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IRFH7440TRPBF irfh7440pbf.pdf?fileId=5546d462533600a40153561f0e821eed
IRFH7440TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 85A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4574 pF @ 25 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4000+32.94 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
IRFH7440TRPBF irfh7440pbf.pdf?fileId=5546d462533600a40153561f0e821eed
IRFH7440TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 85A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4574 pF @ 25 V
на замовлення 6493 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+125.17 грн
10+76.54 грн
100+51.39 грн
500+38.08 грн
1000+34.82 грн
2000+32.38 грн
Мінімальне замовлення: 3
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IRGS6B60KPBF fundamentals-of-power-semiconductors
IRGS6B60KPBF
Виробник: Infineon Technologies
Description: IGBT NPT 600V 13A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
Supplier Device Package: D2PAK
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/215ns
Switching Energy: 110µJ (on), 135µJ (off)
Test Condition: 400V, 5A, 100Ohm, 15V
Gate Charge: 18.2 nC
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 26 A
Power - Max: 90 W
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AUIRF8739L2TR auirf8739l2.pdf?fileId=5546d462533600a4015355b0e3241416
AUIRF8739L2TR
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 57A DIRECTFET
Packaging: Bulk
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 545A (Tc)
Rds On (Max) @ Id, Vgs: 0.6mOhm @ 195A, 10V
Power Dissipation (Max): 3.8W (Ta), 340W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 40V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 562 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17890 pF @ 25 V
Qualification: AEC-Q101
на замовлення 12443 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
68+334.02 грн
Мінімальне замовлення: 68
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IRF7424TR IR_PartNumberingSystem.pdf
IRF7424TR
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 11A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4030 pF @ 25 V
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CY8C4046LQI-T451 Infineon-PSoC_4000T_MCU_datasheet-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c8a44f57b018a799f5fb53b5d
CY8C4046LQI-T451
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 16UFQFN
Packaging: Tray
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, Microwire, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, POR, PWM, WDT
Supplier Device Package: 16-QFN (3x3)
Number of I/O: 11
на замовлення 890 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+255.04 грн
10+185.48 грн
25+170.35 грн
100+144.29 грн
490+132.51 грн
Мінімальне замовлення: 2
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EVALTDA3880718VOUTTOBO1 Infineon-Evaluation_board_TDA38807_P1V8_user_guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190e3af200e5efd
EVALTDA3880718VOUTTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR TDA38807
Packaging: Box
Voltage - Output: 1.8V
Voltage - Input: 12V
Current - Output: 6A
Contents: Board(s)
Regulator Topology: Buck
Utilized IC / Part: TDA38807
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3971.12 грн
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TLE92783BQXV33XUMA1 Infineon-TLE9278-3BQX%20V33-DataSheet-v01_05-EN.pdf?fileId=5546d462689a790c0168c75d4d546425
Виробник: Infineon Technologies
Description: BODY SYSTEM ICS
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 3.3V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 4.5V ~ 28V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Converter, Automotive
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Qualification: AEC-Q100
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TLE92783BQXV33XUMA1 Infineon-TLE9278-3BQX%20V33-DataSheet-v01_05-EN.pdf?fileId=5546d462689a790c0168c75d4d546425
Виробник: Infineon Technologies
Description: BODY SYSTEM ICS
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 3.3V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 4.5V ~ 28V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Converter, Automotive
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2056 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+670.46 грн
10+501.89 грн
25+465.94 грн
100+400.18 грн
250+382.51 грн
500+371.85 грн
1000+357.13 грн
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TLE92783BQXXUMA1 Infineon-TLE9278-3BQX-DataSheet-v01_05-EN.pdf?fileId=5546d462689a790c0168c738ae356420
TLE92783BQXXUMA1
Виробник: Infineon Technologies
Description: BODY SYSTEM ICS
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 4.5V ~ 28V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Converter, Automotive
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Qualification: AEC-Q100
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BFR35AP INFNS29989-1.pdf?t.download=true&u=5oefqw
BFR35AP
Виробник: Infineon Technologies
Description: BFR35 - LOW-NOISE SI TRANSISTORS
Packaging: Bulk
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AIMCQ120R120M1TXTMA1 Infineon-AIMCQ120R120M1T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01910fe652966b27
AIMCQ120R120M1TXTMA1
Виробник: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 7A, 20V
Power Dissipation (Max): 161W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 2.2mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 800 V
Qualification: AEC-Q101
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AIMCQ120R120M1TXTMA1 Infineon-AIMCQ120R120M1T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01910fe652966b27
AIMCQ120R120M1TXTMA1
Виробник: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 7A, 20V
Power Dissipation (Max): 161W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 2.2mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 800 V
Qualification: AEC-Q101
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AIMBG120R120M1XTMA1 Infineon-AIMBG120R120M1-DataSheet-v01_30-EN.pdf?fileId=8ac78c8c8fc2dd9c018fe1b113965b24
AIMBG120R120M1XTMA1
Виробник: Infineon Technologies
Description: SICFET N-CH 1200V 22A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 7A, 20V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 2.2mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 800 V
Qualification: AEC-Q101
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AIMZHN120R120M1TXKSA1 Infineon-AIMZHN120R120M1T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c68fc61634aa1
AIMZHN120R120M1TXKSA1
Виробник: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 7A, 20V
Power Dissipation (Max): 133W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 2.2mA
Supplier Device Package: PG-TO247-4-14
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 800 V
Qualification: AEC-Q101
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ISC079N15NM6ATMA1 Infineon-ISC079N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a01907753460f7058
ISC079N15NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.8A (Ta), 95A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 36A, 15V
Power Dissipation (Max): 3W (Ta), 165W (Tc)
Vgs(th) (Max) @ Id: 4V @ 77µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 75 V
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ISC079N15NM6ATMA1 Infineon-ISC079N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a01907753460f7058
ISC079N15NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.8A (Ta), 95A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 36A, 15V
Power Dissipation (Max): 3W (Ta), 165W (Tc)
Vgs(th) (Max) @ Id: 4V @ 77µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 75 V
на замовлення 4622 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+300.42 грн
10+204.24 грн
100+158.32 грн
500+125.21 грн
1000+116.17 грн
2000+115.17 грн
Мінімальне замовлення: 2
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IMW65R026M2HXKSA1 IMW65R026M2HXKSA1.pdf
IMW65R026M2HXKSA1
Виробник: Infineon Technologies
Description: IMW65R026M2HXKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 34.5A, 20V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 7mA
Supplier Device Package: PG-TO247-3-40
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1499 pF @ 400 V
на замовлення 415 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+900.47 грн
30+523.16 грн
120+447.65 грн
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CYW43438LKUBGT
Виробник: Infineon Technologies
Description: WI-FI COMBO IOT
Packaging: Tape & Reel (TR)
Package / Case: 63-UFBGA, WLBGA
Sensitivity: -99dBm
Mounting Type: Surface Mount
Memory Size: 640kB ROM, 512kB SRAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 21dBm
Protocol: 802.11b/g/n, Bluetooth v4.0
Current - Receiving: 37mA ~ 41mA
Data Rate (Max): 54Mbps
Current - Transmitting: 260mA ~ 320mA
Supplier Device Package: 63-WLBGA (2.87x4.87)
GPIO: 5
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, SPI, UART
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IGLD65R110D2AUMA1 infineon-igld65r110d2-datasheet-en.pdf
IGLD65R110D2AUMA1
Виробник: Infineon Technologies
Description: GANFET N-CH 650V 14A 8LDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-LDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 4A
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.3mA
Supplier Device Package: PG-LSON-8-2
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 400 V
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IGLD65R110D2AUMA1 infineon-igld65r110d2-datasheet-en.pdf
IGLD65R110D2AUMA1
Виробник: Infineon Technologies
Description: GANFET N-CH 650V 14A 8LDFN
Packaging: Cut Tape (CT)
Package / Case: 8-LDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 4A
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.3mA
Supplier Device Package: PG-LSON-8-2
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 400 V
на замовлення 2557 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+318.41 грн
10+202.58 грн
100+143.36 грн
500+116.06 грн
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CY9BF404RAPMC-G-UNE2 download
CY9BF404RAPMC-G-UNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 100
DigiKey Programmable: Not Verified
на замовлення 840 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+484.26 грн
10+361.54 грн
25+335.24 грн
84+295.26 грн
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S29GL128P90FAIR12 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref
S29GL128P90FAIR12
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
400+392.49 грн
Мінімальне замовлення: 400
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S29GL128P90FAIR12 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref
S29GL128P90FAIR12
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Cut Tape (CT)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+521.82 грн
10+445.91 грн
25+425.20 грн
50+384.92 грн
100+371.31 грн
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KITXMC7200MC1TOBO1 Infineon-KIT_XMC7200_MC1_product_brief-ProductBrief-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192e53ce9337b6a
KITXMC7200MC1TOBO1
Виробник: Infineon Technologies
Description: KITXMC7200MC1TOBO1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: XMC7200
Primary Attributes: Isolated
Embedded: Yes, MCU
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+38984.43 грн
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KITXMC72EVK Infineon-KIT_XMC72_EVK_XMC7200-evaluation-kit-quick-start-guide-GettingStarted-v01_00-EN.pdf?fileId=8ac78c8c8412f8d301842e60df937b6f
KITXMC72EVK
Виробник: Infineon Technologies
Description: EVALUATION BOARD WHICH CARRIES A
Packaging: Bulk
Mounting Type: Fixed
Type: MCU
Contents: Board(s), Cable(s), Power Supply, Accessories
Core Processor: ARM® Cortex®-M0, Cortex®-M7
Utilized IC / Part: XMC7200
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XMC7241SCQ040XAAXUMA1 Orderable_Part_Number_OPN_Translation_Table_Web.pdf
XMC7241SCQ040XAAXUMA1
Виробник: Infineon Technologies
Description: XMC1000
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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XMC7200-F176K8384AA Infineon-XMC-7200-Datasheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8412f8d30184443173374425
XMC7200-F176K8384AA
Виробник: Infineon Technologies
Description: IC MCU 32BIT 8.18MB 176LQFP
Packaging: Tray
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 350MHz
Program Memory Size: 8.188MB (8.188M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
Data Converters: A/D 81x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, FIFO, I2C, IrDA, MMC/SD/SDIO, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 176-TEQFP (24x24)
Number of I/O: 148
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S25FL512SDSMFB010 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53
S25FL512SDSMFB010
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 235 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+851.18 грн
10+760.67 грн
25+737.05 грн
40+680.38 грн
80+663.77 грн
В кошику  од. на суму  грн.
S25FL512SAGMFVR13 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL512SAGMFVR13
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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BB 659C-02V E7902 bb639c_bb659cseries.pdf
BB 659C-02V E7902
Виробник: Infineon Technologies
Description: DIODE VAR CAP 30V 20MA SC-79
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 15.3
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BB 659C-02V E7908 bb639c_bb659cseries.pdf
BB 659C-02V E7908
Виробник: Infineon Technologies
Description: DIODE VAR CAP 30V 20MA SC-79
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 15.3
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BB 664-02V E7902 bb644_bb664series.pdf
BB 664-02V E7902
Виробник: Infineon Technologies
Description: DIODE VAR CAP 30V 20MA SC-79
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 17.8
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BB 689-02V E7902 bb669_bb689series.pdf
BB 689-02V E7902
Виробник: Infineon Technologies
Description: DIODE VAR CAP 30V 20MA SC-79
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 23.2
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BB 689-02V E7908 bb669_bb689series.pdf
BB 689-02V E7908
Виробник: Infineon Technologies
Description: DIODE VAR CAP 30V 20MA SC-79
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 23.2
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SKP02N60XKSA1 fundamentals-of-power-semiconductors
SKP02N60XKSA1
Виробник: Infineon Technologies
Description: IGBT NPT 600V 6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 130 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2A
Supplier Device Package: PG-TO220-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 20ns/259ns
Switching Energy: 64µJ
Test Condition: 400V, 2A, 118Ohm, 15V
Gate Charge: 14 nC
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 30 W
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SGD02N60BUMA1 SGP_D02N60_Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4283d5e3da6
SGD02N60BUMA1
Виробник: Infineon Technologies
Description: IGBT NPT 600V 6A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2A
Supplier Device Package: PG-TO252-3-11
IGBT Type: NPT
Td (on/off) @ 25°C: 20ns/259ns
Switching Energy: 64µJ
Test Condition: 400V, 2A, 118Ohm, 15V
Gate Charge: 14 nC
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 30 W
на замовлення 25404 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
317+63.72 грн
Мінімальне замовлення: 317
В кошику  од. на суму  грн.
AUIRGR4045D auirgr4045d.pdf?fileId=5546d462533600a4015355ba8960152f
AUIRGR4045D
Виробник: Infineon Technologies
Description: IGBT TRENCH 600V 12A TO-252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Supplier Device Package: TO-252AA
IGBT Type: Trench
Td (on/off) @ 25°C: 27ns/75ns
Switching Energy: 56µJ (on), 122µJ (off)
Test Condition: 400V, 6A, 47Ohm, 15V
Gate Charge: 19.5 nC
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 77 W
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IRGR4045DPBF IRGR4045DPbF.pdf
IRGR4045DPBF
Виробник: Infineon Technologies
Description: IGBT TRENCH 600V 12A TO-252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Supplier Device Package: TO-252AA (DPAK)
IGBT Type: Trench
Td (on/off) @ 25°C: 27ns/75ns
Switching Energy: 56µJ (on), 122µJ (off)
Test Condition: 400V, 6A, 47Ohm, 15V
Gate Charge: 19.5 nC
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 77 W
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IRS2004PBF irs2004pbf.pdf?fileId=5546d462533600a401535675b86b2782
IRS2004PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
на замовлення 2142 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
136+148.65 грн
Мінімальне замовлення: 136
В кошику  од. на суму  грн.
IRS2003SPBF irs2003pbf.pdf?fileId=5546d462533600a401535675afec2780
IRS2003SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
на замовлення 260 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
260+76.46 грн
Мінімальне замовлення: 260
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FZ1800R45HL4S7BPSA1 Infineon-FZ1800R45HL4_S7-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97d2610057b
FZ1800R45HL4S7BPSA1
Виробник: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 25V, 1800A
NTC Thermistor: No
Supplier Device Package: AG-IHVB190
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Power - Max: 4000000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 297 nF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+195465.86 грн
В кошику  од. на суму  грн.
FZ1800R17HE4B9HOSA2 Infineon-FZ1800R17HE4_B9-DS-v02_02-EN.pdf?fileId=db3a30433e4143bd013e4717b1fe4244
FZ1800R17HE4B9HOSA2
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 1800A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1800A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 11500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 145 nF @ 25 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+79477.20 грн
В кошику  од. на суму  грн.
FZ1800R17HE4B9HOSA2 Infineon-FZ1800R17HE4_B9-DS-v02_02-EN.pdf?fileId=db3a30433e4143bd013e4717b1fe4244
FZ1800R17HE4B9HOSA2
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 1800A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1800A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 11500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 145 nF @ 25 V
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SAX-XC878-16FFA 5V AC Infineon-XC87X-DS-v01_05-en.pdf?folderId=db3a304412b407950112b40c497b0af6&fileId=db3a30432239cccd01231293d56908b1&ack=t
SAX-XC878-16FFA 5V AC
Виробник: Infineon Technologies
Description: IC MCU 8BIT 64KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 27MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 3.25K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: SPI, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-4
Number of I/O: 40
DigiKey Programmable: Not Verified
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SAX-XC878CM-13FFA 5V AC Infineon-XC87X-DS-v01_05-en.pdf?folderId=db3a304412b407950112b40c497b0af6&fileId=db3a30432239cccd01231293d56908b1&ack=t
SAX-XC878CM-13FFA 5V AC
Виробник: Infineon Technologies
Description: IC MCU 8BIT 52KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 27MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 3.25K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, SPI, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-4
Number of I/O: 40
DigiKey Programmable: Not Verified
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