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CY8C4025LQSS411UXQLA1 Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4000S_Family_Datasheet_Programmable_System-on-Chip_PSoC-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee641716e5b Description: IC MCU 32BIT 32KB FLASH
Packaging: Tray
товару немає в наявності
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IMBG120R078M2HXTMA1 IMBG120R078M2HXTMA1 Infineon Technologies Infineon-IMBG120R078M2H-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8d1b852e018d22002f5620d6 Description: SIC DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 78.1mOhm @ 8.9A, 18V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 2.8mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 20.6 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 800 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+244.92 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IMBG120R078M2HXTMA1 IMBG120R078M2HXTMA1 Infineon Technologies Infineon-IMBG120R078M2H-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8d1b852e018d22002f5620d6 Description: SIC DISCRETE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 78.1mOhm @ 8.9A, 18V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 2.8mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 20.6 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 800 V
на замовлення 1085 шт:
термін постачання 21-31 дні (днів)
1+579.35 грн
10+378.80 грн
100+277.16 грн
500+221.33 грн
В кошику  од. на суму  грн.
IMBG65R050M2HXTMA1 IMBG65R050M2HXTMA1 Infineon Technologies Infineon-IMBG65R050M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dd63b78ab52df Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 18.2A, 18V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 400 V
товару немає в наявності
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IMBG65R050M2HXTMA1 IMBG65R050M2HXTMA1 Infineon Technologies Infineon-IMBG65R050M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dd63b78ab52df Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 18.2A, 18V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 400 V
на замовлення 885 шт:
термін постачання 21-31 дні (днів)
1+607.20 грн
10+406.31 грн
100+351.56 грн
500+300.43 грн
В кошику  од. на суму  грн.
IMBG120R053M2HXTMA1 IMBG120R053M2HXTMA1 Infineon Technologies Infineon-IMBG120R053M2H-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8d1b852e018d22001fc620d3 Description: SIC DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 52.6mOhm @ 13.2A, 18V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 4.1mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 800 V
товару немає в наявності
В кошику  од. на суму  грн.
IMBG120R053M2HXTMA1 IMBG120R053M2HXTMA1 Infineon Technologies Infineon-IMBG120R053M2H-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8d1b852e018d22001fc620d3 Description: SIC DISCRETE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 52.6mOhm @ 13.2A, 18V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 4.1mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 800 V
товару немає в наявності
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2EP101RXTMA1 2EP101RXTMA1 Infineon Technologies Infineon-2EP1xxR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0191231d6dd30ca1 Description: ISOLATED DRIVER
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Applications: Transformer Driver
Supplier Device Package: PG-TSSOP-8
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
3+112.21 грн
10+78.93 грн
25+71.67 грн
100+59.73 грн
250+56.15 грн
500+53.99 грн
1000+51.35 грн
2500+49.50 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
2EP100RXTMA1 2EP100RXTMA1 Infineon Technologies Infineon-2EP1xxR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0191231d6dd30ca1 Description: ISOLATED DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Applications: Transformer Driver
Supplier Device Package: PG-TSSOP-8
товару немає в наявності
В кошику  од. на суму  грн.
2EP100RXTMA1 2EP100RXTMA1 Infineon Technologies Infineon-2EP1xxR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0191231d6dd30ca1 Description: ISOLATED DRIVER
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Applications: Transformer Driver
Supplier Device Package: PG-TSSOP-8
на замовлення 4896 шт:
термін постачання 21-31 дні (днів)
3+112.21 грн
10+78.93 грн
25+71.67 грн
100+59.73 грн
250+56.15 грн
500+53.99 грн
1000+51.35 грн
2500+49.50 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
2EP110RXTMA1 2EP110RXTMA1 Infineon Technologies Infineon-2EP1xxR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0191231d6dd30ca1 Description: ISOLATED DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Applications: Transformer Driver
Supplier Device Package: PG-TSSOP-8
товару немає в наявності
В кошику  од. на суму  грн.
2EP110RXTMA1 2EP110RXTMA1 Infineon Technologies Infineon-2EP1xxR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0191231d6dd30ca1 Description: ISOLATED DRIVER
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Applications: Transformer Driver
Supplier Device Package: PG-TSSOP-8
на замовлення 4995 шт:
термін постачання 21-31 дні (днів)
3+120.17 грн
10+85.14 грн
25+77.37 грн
100+64.57 грн
250+60.74 грн
500+58.43 грн
1000+55.61 грн
2500+53.63 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CYT4DNJBECQ1BZSGS Infineon Technologies Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0 Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tray
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
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CYT4DNJBECQ1BZSGST Infineon Technologies Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0 Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tape & Reel (TR)
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
товару немає в наявності
В кошику  од. на суму  грн.
IKQB120N75CP2AKSA1 IKQB120N75CP2AKSA1 Infineon Technologies Infineon-IKQB120N75CP2-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8779172a0187bc4a80df1e65 Description: IGBT 750V 150A TO247-3-51
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 120A
Supplier Device Package: PG-TO247-3-51
Td (on/off) @ 25°C: 57ns/285ns
Switching Energy: 6.4mJ (on), 3.4mJ (off)
Test Condition: 450V, 120A, 4.8Ohm, 15V
Gate Charge: 481 nC
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 577 W
на замовлення 165 шт:
термін постачання 21-31 дні (днів)
1+725.78 грн
30+413.11 грн
120+350.36 грн
В кошику  од. на суму  грн.
STK12C68-PF55 STK12C68-PF55 Infineon Technologies STK12C68%20RevC.pdf Description: IC NVSRAM 64KBIT PARALLEL 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 28-PDIP
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
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STK12C68-WF25I STK12C68-WF25I Infineon Technologies STK12C68%20RevC.pdf Description: IC NVSRAM 64KBIT PARALLEL 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 28-PDIP
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
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ICE3B0565JGXUMA1 ICE3B0565JGXUMA1 Infineon Technologies Datasheet_CoolSET-F3JG_v2_0_14Nov2006.pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b428f96f3f62 Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.3V ~ 26V
Supplier Device Package: PG-DSO-12-10
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Control Features: Soft Start
Power (Watts): 25 W
на замовлення 9655 шт:
термін постачання 21-31 дні (днів)
254+87.35 грн
Мінімальне замовлення: 254
В кошику  од. на суму  грн.
ICE3B0565JFKLA1 ICE3B0565JFKLA1 Infineon Technologies Infineon-ICE3BXX65J-DS-v02_09-en.pdf?fileId=db3a3043394427e4013953109b207cb2 Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.3V ~ 26V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Control Features: Soft Start
Power (Watts): 25 W
на замовлення 478 шт:
термін постачання 21-31 дні (днів)
201+110.11 грн
Мінімальне замовлення: 201
В кошику  од. на суму  грн.
ICE3B0565XKLA1 ICE3B0565XKLA1 Infineon Technologies Datasheet_CoolSET-F3_v23_2Apr2013.pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b428f6ba3f30 Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 72%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Control Features: Soft Start
Power (Watts): 25 W
на замовлення 3482 шт:
термін постачання 21-31 дні (днів)
256+86.62 грн
Мінімальне замовлення: 256
В кошику  од. на суму  грн.
IM241M6S1JALMA1 IM241M6S1JALMA1 Infineon Technologies Infineon-IM241_Series_4A-DataSheet-v01_06-EN.pdf?fileId=8ac78c8c81ae03fc0181f110aa4c7f88 Description: CIPOS MICRO
Packaging: Tube
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 4 A
Voltage: 600 V
на замовлення 240 шт:
термін постачання 21-31 дні (днів)
1+635.06 грн
10+475.05 грн
25+440.80 грн
240+362.20 грн
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FZ1000R33HL3BPSA1 FZ1000R33HL3BPSA1 Infineon Technologies Infineon-FZ1000R33HL3-DS-v03_02-EN.pdf?fileId=db3a3043156fd57301158e123466040c Description: IGBT MOD 3300V 1000A 1600W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 1000A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1000 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 1600 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 190 nF @ 25 V
на замовлення 382 шт:
термін постачання 21-31 дні (днів)
1+142927.41 грн
В кошику  од. на суму  грн.
FF1000R17IE4BOSA1 FF1000R17IE4BOSA1 Infineon Technologies Infineon-FF1000R17IE4-DS-v03_02-en_de.pdf?fileId=db3a30431ff9881501201dc994a34980 Description: IGBT MODULE 1700V 6250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
NTC Thermistor: Yes
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 6250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 81 nF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+43109.81 грн
В кошику  од. на суму  грн.
FF1000R17IE4DPB2BOSA1 FF1000R17IE4DPB2BOSA1 Infineon Technologies Infineon-FF1000R17IE4DP_B2-DS-v03_00-EN.pdf?fileId=5546d46253e9fadc0153f0cfe83642bd Description: IGBT MODULE 1700V 1000A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1000 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 81 nF @ 25 V
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FF1000R17IE4B60BPSA1 Infineon Technologies Description: PP IHM I
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
NTC Thermistor: Yes
Current - Collector (Ic) (Max): 1390 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 6250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 81 nF @ 25 V
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FZ1000R45KL3B5NPSA1 Infineon Technologies Infineon-FZ1000R45KL3_B5-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c821f38900182aae3792908a2 Description: IHV IHM T
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.05V @ 15V, 1kA
NTC Thermistor: No
Supplier Device Package: A-IHV130
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1000 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Power - Max: 1600000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 185 nF @ 25 V
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SPINDLE2GOTOBO1 SPINDLE2GOTOBO1 Infineon Technologies Description: SPINDLE2GO
Packaging: Box
For Use With/Related Products: Sensor2Go
Accessory Type: Spindle
Utilized IC / Part: Sensor2Go
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+2613.44 грн
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IPS060N03LGAKMA1 IPS060N03LGAKMA1 Infineon Technologies IP%28D%2CF%2CS%2CU%29060N03L_G.pdf Description: MOSFET N-CH 30V 50A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+18.35 грн
Мінімальне замовлення: 1500
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LITEDCDCSBCBOARDTOBO1 LITEDCDCSBCBOARDTOBO1 Infineon Technologies Infineon-Lite_SBC_Evaluation_Board-Getting_Started-UM-v01_00-EN.pdf?fileId=5546d46267c74c9a0167d02c0bcd1a6a Description: LITE DCDC SBC BOARD
Packaging: Box
Function: System Basis Chip (SBC)
Type: Interface
Contents: Board(s)
Utilized IC / Part: TLE9471-3ES
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+10295.39 грн
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CY25404ZXI227T Infineon Technologies Description: IC SS CLOCK GENERATOR 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Spread Spectrum Clock Generator
Input: Clock, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 20-TSSOP
PLL: Yes
Divider/Multiplier: Yes/No
Number of Circuits: 1
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CY25404ZXI243T Infineon Technologies Description: IC SS CLOCK GENERATOR 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Spread Spectrum Clock Generator
Input: Clock, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 20-TSSOP
PLL: Yes
Divider/Multiplier: Yes/No
Number of Circuits: 1
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CY25404ZXI223T Infineon Technologies Description: IC SS CLOCK GENERATOR 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Spread Spectrum Clock Generator
Input: Clock, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 20-TSSOP
PLL: Yes
Divider/Multiplier: Yes/No
Number of Circuits: 1
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CY25404ZXI231T Infineon Technologies Description: IC SS CLOCK GENERATOR 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Spread Spectrum Clock Generator
Input: Clock, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 20-TSSOP
PLL: Yes
Divider/Multiplier: Yes/No
Number of Circuits: 1
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S25FL256LAGBHN023 S25FL256LAGBHN023 Infineon Technologies S25FL256L_Rev_A.pdf Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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S25FL256LAGBHN020 S25FL256LAGBHN020 Infineon Technologies S25FL256L_Rev_A.pdf Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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S25FL256LAGBHM023 S25FL256LAGBHM023 Infineon Technologies Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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IR3823MTRPBF IR3823MTRPBF Infineon Technologies ir3823m.pdf?fileId=5546d462533600a4015355d1ca1b17be Description: IC REG BUCK ADJ 3A 15PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 300kHz ~ 1.5MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: 15-PQFN (3.5x3.5)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.06V
Voltage - Input (Min): 5.5V
Voltage - Output (Min/Fixed): 0.6V
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IR3823MTRPBF IR3823MTRPBF Infineon Technologies ir3823m.pdf?fileId=5546d462533600a4015355d1ca1b17be Description: IC REG BUCK ADJ 3A 15PQFN
Packaging: Cut Tape (CT)
Package / Case: 15-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 300kHz ~ 1.5MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: 15-PQFN (3.5x3.5)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.06V
Voltage - Input (Min): 5.5V
Voltage - Output (Min/Fixed): 0.6V
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TLE9351BVSJXTMA1 TLE9351BVSJXTMA1 Infineon Technologies Infineon-TLE9351BVSJ-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018b66e2ba9308ed Description: IC TRANSCEIVER HALF 1/1 PGDSO880
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8-80
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+41.40 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TLE9351BVSJXTMA1 TLE9351BVSJXTMA1 Infineon Technologies Infineon-TLE9351BVSJ-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018b66e2ba9308ed Description: IC TRANSCEIVER HALF 1/1 PGDSO880
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8-80
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2509 шт:
термін постачання 21-31 дні (днів)
4+85.95 грн
10+59.77 грн
25+54.10 грн
100+44.83 грн
250+42.00 грн
500+40.29 грн
1000+38.25 грн
Мінімальне замовлення: 4
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TLE9350BVSJXTMA1 TLE9350BVSJXTMA1 Infineon Technologies Infineon-TLE9350BVSJ-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018b66e2a95608e7 Description: IC TRANSCEIVER HALF 1/1 PGDSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
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TLE9350BVSJXTMA1 TLE9350BVSJXTMA1 Infineon Technologies Infineon-TLE9350BVSJ-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018b66e2a95608e7 Description: IC TRANSCEIVER HALF 1/1 PGDSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
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IPD30N10S3L34ATMA2 IPD30N10S3L34ATMA2 Infineon Technologies Infineon-IPD30N10S3L-34-DataSheet-v01_02-EN.pdf?fileId=db3a30431a5c32f2011a908963135956 Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 30A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 29µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1976 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2499 шт:
термін постачання 21-31 дні (днів)
3+145.63 грн
10+89.43 грн
100+60.37 грн
500+44.97 грн
1000+41.21 грн
Мінімальне замовлення: 3
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SPW20N60CFDFKSA1 SPW20N60CFDFKSA1 Infineon Technologies SPW20N60CFD_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c02c5464d Description: MOSFET N-CH 650V 20.7A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: PG-TO247-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
на замовлення 360 шт:
термін постачання 21-31 дні (днів)
121+182.78 грн
Мінімальне замовлення: 121
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FS02MR12A8MA2BBPSA1 FS02MR12A8MA2BBPSA1 Infineon Technologies Description: MOSFET 6N-CH 1200V 390A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 390A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 34500pF @ 750V
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 390A, 18V
Gate Charge (Qg) (Max) @ Vgs: 1.19µC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4.55V @ 160mA
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+104646.58 грн
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FS03MR12A7MA2BHPSA1 FS03MR12A7MA2BHPSA1 Infineon Technologies Infineon-FS03MR12A7MA2B-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801916b02b299554e Description: MOSFET 6N-CH 1200V 310A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 310A
Input Capacitance (Ciss) (Max) @ Vds: 25900pF @ 750V
Rds On (Max) @ Id, Vgs: 2.54mOhm @ 310A, 18V
Gate Charge (Qg) (Max) @ Vgs: 870nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4.55V @ 120mA
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+98047.73 грн
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FS01MR08A8MA2LBCHPSA1 FS01MR08A8MA2LBCHPSA1 Infineon Technologies Infineon-FS01MR08A8MA2LBC-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f1095fc384122 Description: MOSFET 6N-CH 750V 620A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 750V
Current - Continuous Drain (Id) @ 25°C: 620A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 43000pF @ 470V
Rds On (Max) @ Id, Vgs: 1.69mOhm @ 620A, 18V
Gate Charge (Qg) (Max) @ Vgs: 1480nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4.55V @ 200mA
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IRF7450PBF IRF7450PBF Infineon Technologies irf7450pbf.pdf?fileId=5546d462533600a4015355fb33381be2 Description: MOSFET N-CH 200V 2.5A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 1.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 25 V
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IRGP6660D-EPBF IRGP6660D-EPBF Infineon Technologies IRGP6660DPbF%2C-EPbF.pdf Description: IGBT 600V 95A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 48A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 60ns/155ns
Switching Energy: 600µJ (on), 1.3mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 95 nC
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 330 W
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IRG4IBC30KDPBF IRG4IBC30KDPBF Infineon Technologies irg4ibc30kdpbf.pdf?fileId=5546d462533600a40153564394b822b6 Description: IGBT 600V 17A 45W TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
Supplier Device Package: TO-220AB Full-Pak
Td (on/off) @ 25°C: 60ns/160ns
Switching Energy: 600µJ (on), 580µJ (off)
Test Condition: 480V, 16A, 23Ohm, 15V
Gate Charge: 67 nC
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 34 A
Power - Max: 45 W
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XDP710002XUMA1 XDP710002XUMA1 Infineon Technologies Infineon-XDP710-002-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dc186655e54f3 Description: CONTROLLER
Features: Fault Timeout, Latched Fault, OVP, PMBus, UVLO
Packaging: Tape & Reel (TR)
Package / Case: 29-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Hot Swap Controller
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 5.5V ~ 80V
Applications: General Purpose
Internal Switch(s): Yes
Current - Output (Max): 1.5A
Supplier Device Package: 29-VQFN (6x6)
Programmable Features: Current Limit, Fault Timeout, OVP, UVLO
Number of Channels: 1
Current - Supply: 7 mA
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XDP710002XUMA1 XDP710002XUMA1 Infineon Technologies Infineon-XDP710-002-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dc186655e54f3 Description: CONTROLLER
Features: Fault Timeout, Latched Fault, OVP, PMBus, UVLO
Packaging: Cut Tape (CT)
Package / Case: 29-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Hot Swap Controller
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 5.5V ~ 80V
Applications: General Purpose
Internal Switch(s): Yes
Current - Output (Max): 1.5A
Supplier Device Package: 29-VQFN (6x6)
Programmable Features: Current Limit, Fault Timeout, OVP, UVLO
Number of Channels: 1
Current - Supply: 7 mA
на замовлення 985 шт:
термін постачання 21-31 дні (днів)
1+602.43 грн
10+449.53 грн
25+416.86 грн
100+357.56 грн
250+341.52 грн
500+331.85 грн
В кошику  од. на суму  грн.
CY15V104QN-20LPXC CY15V104QN-20LPXC Infineon Technologies Infineon-CY15B104QN_CY15V104QN_Excelon(TM)_LP_4-Mbit_(512K_X_8)_Serial_(SPI)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7709b704a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integr Description: IC FRAM 4MBIT SPI 20MHZ 8GQFN
Packaging: Tray
Package / Case: 8-UQFN
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-GQFN (3.23x3.28)
Memory Interface: SPI
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY7C63310-PXC CY7C63310-PXC Infineon Technologies download Description: IC USB PERIPHERAL CTRLR 16-DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Function: Controller
Interface: GPIO, SPI
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.5V
Current - Supply: 40mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 16-PDIP
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
CY7C63801-PXC CY7C63801-PXC Infineon Technologies download Description: IC USB PERIPHERAL CTRLR 16-DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Function: Controller
Interface: GPIO, SPI
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.5V
Current - Supply: 40mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 16-PDIP
DigiKey Programmable: Not Verified
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CY62256LL-70PXC CY62256LL-70PXC Infineon Technologies CY62256%20%28Jul05%29.pdf description Description: IC SRAM 256KBIT PARALLEL 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-PDIP
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
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TLS850F3TUV50BOARDTOBO1 TLS850F3TUV50BOARDTOBO1 Infineon Technologies Infineon-Z8F80607085_TLS850F3TUVXX_Demoboard-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f84ce5c094e35 Description: EVAL BOARD FOR TLS850F3TUV50
Packaging: Box
Voltage - Output: 5V
Voltage - Input: 3V ~ 42V
Current - Output: 500mA
Contents: Board(s)
Regulator Type: Positive Fixed
Utilized IC / Part: TLS850F3TUV50
Channels per IC: 1 - Single
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+6625.12 грн
В кошику  од. на суму  грн.
IDYH25G200C5XKSA1 IDYH25G200C5XKSA1 Infineon Technologies Description: DIODE SIC 2000V 77A PGTO247U04
Packaging: Tube
Package / Case: TO-247-4 Variant
Mounting Type: Through Hole
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1140pF @ 1V, 100kHz
Current - Average Rectified (Io): 77A
Supplier Device Package: PG-TO247-U04
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 25 A
Current - Reverse Leakage @ Vr: 375 µA @ 2000 V
на замовлення 56 шт:
термін постачання 21-31 дні (днів)
1+1560.58 грн
30+945.91 грн
В кошику  од. на суму  грн.
CY8CLED164-28PVXI Infineon Technologies Description: PROGRAMMABLE SYSTEM ON A CHIP
Mounting Type: Surface Mount
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
IPZA60R120P7XKSA1 IPZA60R120P7XKSA1 Infineon Technologies Infineon-IPZA60R120P7-DS-v02_00-EN.pdf?fileId=5546d462602a9dc80160454dfa181953 Description: MOSFET N-CH 600V 26A TO247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 8.2A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 410µA
Supplier Device Package: PG-TO247-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
122+187.41 грн
Мінімальне замовлення: 122
В кошику  од. на суму  грн.
CY8C4025LQSS411UXQLA1 Infineon-Automotive_PSoC_4_PSoC_4000S_Family_Datasheet_Programmable_System-on-Chip_PSoC-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee641716e5b
Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH
Packaging: Tray
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IMBG120R078M2HXTMA1 Infineon-IMBG120R078M2H-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8d1b852e018d22002f5620d6
IMBG120R078M2HXTMA1
Виробник: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 78.1mOhm @ 8.9A, 18V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 2.8mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 20.6 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 800 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+244.92 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IMBG120R078M2HXTMA1 Infineon-IMBG120R078M2H-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8d1b852e018d22002f5620d6
IMBG120R078M2HXTMA1
Виробник: Infineon Technologies
Description: SIC DISCRETE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 78.1mOhm @ 8.9A, 18V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 2.8mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 20.6 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 800 V
на замовлення 1085 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+579.35 грн
10+378.80 грн
100+277.16 грн
500+221.33 грн
В кошику  од. на суму  грн.
IMBG65R050M2HXTMA1 Infineon-IMBG65R050M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dd63b78ab52df
IMBG65R050M2HXTMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 18.2A, 18V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 400 V
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IMBG65R050M2HXTMA1 Infineon-IMBG65R050M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dd63b78ab52df
IMBG65R050M2HXTMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 18.2A, 18V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 400 V
на замовлення 885 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+607.20 грн
10+406.31 грн
100+351.56 грн
500+300.43 грн
В кошику  од. на суму  грн.
IMBG120R053M2HXTMA1 Infineon-IMBG120R053M2H-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8d1b852e018d22001fc620d3
IMBG120R053M2HXTMA1
Виробник: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 52.6mOhm @ 13.2A, 18V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 4.1mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 800 V
товару немає в наявності
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IMBG120R053M2HXTMA1 Infineon-IMBG120R053M2H-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8d1b852e018d22001fc620d3
IMBG120R053M2HXTMA1
Виробник: Infineon Technologies
Description: SIC DISCRETE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 52.6mOhm @ 13.2A, 18V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 4.1mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 800 V
товару немає в наявності
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2EP101RXTMA1 Infineon-2EP1xxR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0191231d6dd30ca1
2EP101RXTMA1
Виробник: Infineon Technologies
Description: ISOLATED DRIVER
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Applications: Transformer Driver
Supplier Device Package: PG-TSSOP-8
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+112.21 грн
10+78.93 грн
25+71.67 грн
100+59.73 грн
250+56.15 грн
500+53.99 грн
1000+51.35 грн
2500+49.50 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
2EP100RXTMA1 Infineon-2EP1xxR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0191231d6dd30ca1
2EP100RXTMA1
Виробник: Infineon Technologies
Description: ISOLATED DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Applications: Transformer Driver
Supplier Device Package: PG-TSSOP-8
товару немає в наявності
В кошику  од. на суму  грн.
2EP100RXTMA1 Infineon-2EP1xxR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0191231d6dd30ca1
2EP100RXTMA1
Виробник: Infineon Technologies
Description: ISOLATED DRIVER
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Applications: Transformer Driver
Supplier Device Package: PG-TSSOP-8
на замовлення 4896 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+112.21 грн
10+78.93 грн
25+71.67 грн
100+59.73 грн
250+56.15 грн
500+53.99 грн
1000+51.35 грн
2500+49.50 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
2EP110RXTMA1 Infineon-2EP1xxR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0191231d6dd30ca1
2EP110RXTMA1
Виробник: Infineon Technologies
Description: ISOLATED DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Applications: Transformer Driver
Supplier Device Package: PG-TSSOP-8
товару немає в наявності
В кошику  од. на суму  грн.
2EP110RXTMA1 Infineon-2EP1xxR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0191231d6dd30ca1
2EP110RXTMA1
Виробник: Infineon Technologies
Description: ISOLATED DRIVER
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Applications: Transformer Driver
Supplier Device Package: PG-TSSOP-8
на замовлення 4995 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+120.17 грн
10+85.14 грн
25+77.37 грн
100+64.57 грн
250+60.74 грн
500+58.43 грн
1000+55.61 грн
2500+53.63 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CYT4DNJBECQ1BZSGS Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0
Виробник: Infineon Technologies
Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tray
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
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CYT4DNJBECQ1BZSGST Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0
Виробник: Infineon Technologies
Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tape & Reel (TR)
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
товару немає в наявності
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IKQB120N75CP2AKSA1 Infineon-IKQB120N75CP2-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8779172a0187bc4a80df1e65
IKQB120N75CP2AKSA1
Виробник: Infineon Technologies
Description: IGBT 750V 150A TO247-3-51
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 120A
Supplier Device Package: PG-TO247-3-51
Td (on/off) @ 25°C: 57ns/285ns
Switching Energy: 6.4mJ (on), 3.4mJ (off)
Test Condition: 450V, 120A, 4.8Ohm, 15V
Gate Charge: 481 nC
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 577 W
на замовлення 165 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+725.78 грн
30+413.11 грн
120+350.36 грн
В кошику  од. на суму  грн.
STK12C68-PF55 STK12C68%20RevC.pdf
STK12C68-PF55
Виробник: Infineon Technologies
Description: IC NVSRAM 64KBIT PARALLEL 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 28-PDIP
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
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STK12C68-WF25I STK12C68%20RevC.pdf
STK12C68-WF25I
Виробник: Infineon Technologies
Description: IC NVSRAM 64KBIT PARALLEL 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 28-PDIP
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
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ICE3B0565JGXUMA1 Datasheet_CoolSET-F3JG_v2_0_14Nov2006.pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b428f96f3f62
ICE3B0565JGXUMA1
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.3V ~ 26V
Supplier Device Package: PG-DSO-12-10
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Control Features: Soft Start
Power (Watts): 25 W
на замовлення 9655 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
254+87.35 грн
Мінімальне замовлення: 254
В кошику  од. на суму  грн.
ICE3B0565JFKLA1 Infineon-ICE3BXX65J-DS-v02_09-en.pdf?fileId=db3a3043394427e4013953109b207cb2
ICE3B0565JFKLA1
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.3V ~ 26V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Control Features: Soft Start
Power (Watts): 25 W
на замовлення 478 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
201+110.11 грн
Мінімальне замовлення: 201
В кошику  од. на суму  грн.
ICE3B0565XKLA1 Datasheet_CoolSET-F3_v23_2Apr2013.pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b428f6ba3f30
ICE3B0565XKLA1
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 72%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Control Features: Soft Start
Power (Watts): 25 W
на замовлення 3482 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
256+86.62 грн
Мінімальне замовлення: 256
В кошику  од. на суму  грн.
IM241M6S1JALMA1 Infineon-IM241_Series_4A-DataSheet-v01_06-EN.pdf?fileId=8ac78c8c81ae03fc0181f110aa4c7f88
IM241M6S1JALMA1
Виробник: Infineon Technologies
Description: CIPOS MICRO
Packaging: Tube
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 4 A
Voltage: 600 V
на замовлення 240 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+635.06 грн
10+475.05 грн
25+440.80 грн
240+362.20 грн
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FZ1000R33HL3BPSA1 Infineon-FZ1000R33HL3-DS-v03_02-EN.pdf?fileId=db3a3043156fd57301158e123466040c
FZ1000R33HL3BPSA1
Виробник: Infineon Technologies
Description: IGBT MOD 3300V 1000A 1600W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 1000A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1000 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 1600 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 190 nF @ 25 V
на замовлення 382 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+142927.41 грн
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FF1000R17IE4BOSA1 Infineon-FF1000R17IE4-DS-v03_02-en_de.pdf?fileId=db3a30431ff9881501201dc994a34980
FF1000R17IE4BOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 6250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
NTC Thermistor: Yes
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 6250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 81 nF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+43109.81 грн
В кошику  од. на суму  грн.
FF1000R17IE4DPB2BOSA1 Infineon-FF1000R17IE4DP_B2-DS-v03_00-EN.pdf?fileId=5546d46253e9fadc0153f0cfe83642bd
FF1000R17IE4DPB2BOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 1000A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1000 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 81 nF @ 25 V
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FF1000R17IE4B60BPSA1
Виробник: Infineon Technologies
Description: PP IHM I
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
NTC Thermistor: Yes
Current - Collector (Ic) (Max): 1390 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 6250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 81 nF @ 25 V
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FZ1000R45KL3B5NPSA1 Infineon-FZ1000R45KL3_B5-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c821f38900182aae3792908a2
Виробник: Infineon Technologies
Description: IHV IHM T
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.05V @ 15V, 1kA
NTC Thermistor: No
Supplier Device Package: A-IHV130
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1000 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Power - Max: 1600000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 185 nF @ 25 V
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SPINDLE2GOTOBO1
SPINDLE2GOTOBO1
Виробник: Infineon Technologies
Description: SPINDLE2GO
Packaging: Box
For Use With/Related Products: Sensor2Go
Accessory Type: Spindle
Utilized IC / Part: Sensor2Go
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2613.44 грн
В кошику  од. на суму  грн.
IPS060N03LGAKMA1 IP%28D%2CF%2CS%2CU%29060N03L_G.pdf
IPS060N03LGAKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+18.35 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
LITEDCDCSBCBOARDTOBO1 Infineon-Lite_SBC_Evaluation_Board-Getting_Started-UM-v01_00-EN.pdf?fileId=5546d46267c74c9a0167d02c0bcd1a6a
LITEDCDCSBCBOARDTOBO1
Виробник: Infineon Technologies
Description: LITE DCDC SBC BOARD
Packaging: Box
Function: System Basis Chip (SBC)
Type: Interface
Contents: Board(s)
Utilized IC / Part: TLE9471-3ES
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+10295.39 грн
В кошику  од. на суму  грн.
CY25404ZXI227T
Виробник: Infineon Technologies
Description: IC SS CLOCK GENERATOR 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Spread Spectrum Clock Generator
Input: Clock, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 20-TSSOP
PLL: Yes
Divider/Multiplier: Yes/No
Number of Circuits: 1
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CY25404ZXI243T
Виробник: Infineon Technologies
Description: IC SS CLOCK GENERATOR 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Spread Spectrum Clock Generator
Input: Clock, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 20-TSSOP
PLL: Yes
Divider/Multiplier: Yes/No
Number of Circuits: 1
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CY25404ZXI223T
Виробник: Infineon Technologies
Description: IC SS CLOCK GENERATOR 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Spread Spectrum Clock Generator
Input: Clock, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 20-TSSOP
PLL: Yes
Divider/Multiplier: Yes/No
Number of Circuits: 1
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CY25404ZXI231T
Виробник: Infineon Technologies
Description: IC SS CLOCK GENERATOR 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Spread Spectrum Clock Generator
Input: Clock, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 20-TSSOP
PLL: Yes
Divider/Multiplier: Yes/No
Number of Circuits: 1
товару немає в наявності
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S25FL256LAGBHN023 S25FL256L_Rev_A.pdf
S25FL256LAGBHN023
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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S25FL256LAGBHN020 S25FL256L_Rev_A.pdf
S25FL256LAGBHN020
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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S25FL256LAGBHM023 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
S25FL256LAGBHM023
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
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IR3823MTRPBF ir3823m.pdf?fileId=5546d462533600a4015355d1ca1b17be
IR3823MTRPBF
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 3A 15PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 300kHz ~ 1.5MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: 15-PQFN (3.5x3.5)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.06V
Voltage - Input (Min): 5.5V
Voltage - Output (Min/Fixed): 0.6V
товару немає в наявності
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IR3823MTRPBF ir3823m.pdf?fileId=5546d462533600a4015355d1ca1b17be
IR3823MTRPBF
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 3A 15PQFN
Packaging: Cut Tape (CT)
Package / Case: 15-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 300kHz ~ 1.5MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: 15-PQFN (3.5x3.5)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.06V
Voltage - Input (Min): 5.5V
Voltage - Output (Min/Fixed): 0.6V
товару немає в наявності
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TLE9351BVSJXTMA1 Infineon-TLE9351BVSJ-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018b66e2ba9308ed
TLE9351BVSJXTMA1
Виробник: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 PGDSO880
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8-80
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+41.40 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TLE9351BVSJXTMA1 Infineon-TLE9351BVSJ-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018b66e2ba9308ed
TLE9351BVSJXTMA1
Виробник: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 PGDSO880
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8-80
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2509 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+85.95 грн
10+59.77 грн
25+54.10 грн
100+44.83 грн
250+42.00 грн
500+40.29 грн
1000+38.25 грн
Мінімальне замовлення: 4
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TLE9350BVSJXTMA1 Infineon-TLE9350BVSJ-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018b66e2a95608e7
TLE9350BVSJXTMA1
Виробник: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 PGDSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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TLE9350BVSJXTMA1 Infineon-TLE9350BVSJ-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018b66e2a95608e7
TLE9350BVSJXTMA1
Виробник: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 PGDSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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IPD30N10S3L34ATMA2 Infineon-IPD30N10S3L-34-DataSheet-v01_02-EN.pdf?fileId=db3a30431a5c32f2011a908963135956
IPD30N10S3L34ATMA2
Виробник: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 30A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 29µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1976 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2499 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+145.63 грн
10+89.43 грн
100+60.37 грн
500+44.97 грн
1000+41.21 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SPW20N60CFDFKSA1 SPW20N60CFD_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c02c5464d
SPW20N60CFDFKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 20.7A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: PG-TO247-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
на замовлення 360 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
121+182.78 грн
Мінімальне замовлення: 121
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FS02MR12A8MA2BBPSA1
FS02MR12A8MA2BBPSA1
Виробник: Infineon Technologies
Description: MOSFET 6N-CH 1200V 390A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 390A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 34500pF @ 750V
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 390A, 18V
Gate Charge (Qg) (Max) @ Vgs: 1.19µC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4.55V @ 160mA
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+104646.58 грн
В кошику  од. на суму  грн.
FS03MR12A7MA2BHPSA1 Infineon-FS03MR12A7MA2B-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801916b02b299554e
FS03MR12A7MA2BHPSA1
Виробник: Infineon Technologies
Description: MOSFET 6N-CH 1200V 310A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 310A
Input Capacitance (Ciss) (Max) @ Vds: 25900pF @ 750V
Rds On (Max) @ Id, Vgs: 2.54mOhm @ 310A, 18V
Gate Charge (Qg) (Max) @ Vgs: 870nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4.55V @ 120mA
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+98047.73 грн
В кошику  од. на суму  грн.
FS01MR08A8MA2LBCHPSA1 Infineon-FS01MR08A8MA2LBC-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f1095fc384122
FS01MR08A8MA2LBCHPSA1
Виробник: Infineon Technologies
Description: MOSFET 6N-CH 750V 620A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 750V
Current - Continuous Drain (Id) @ 25°C: 620A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 43000pF @ 470V
Rds On (Max) @ Id, Vgs: 1.69mOhm @ 620A, 18V
Gate Charge (Qg) (Max) @ Vgs: 1480nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4.55V @ 200mA
товару немає в наявності
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IRF7450PBF irf7450pbf.pdf?fileId=5546d462533600a4015355fb33381be2
IRF7450PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 2.5A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 1.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 25 V
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IRGP6660D-EPBF IRGP6660DPbF%2C-EPbF.pdf
IRGP6660D-EPBF
Виробник: Infineon Technologies
Description: IGBT 600V 95A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 48A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 60ns/155ns
Switching Energy: 600µJ (on), 1.3mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 95 nC
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 330 W
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IRG4IBC30KDPBF irg4ibc30kdpbf.pdf?fileId=5546d462533600a40153564394b822b6
IRG4IBC30KDPBF
Виробник: Infineon Technologies
Description: IGBT 600V 17A 45W TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
Supplier Device Package: TO-220AB Full-Pak
Td (on/off) @ 25°C: 60ns/160ns
Switching Energy: 600µJ (on), 580µJ (off)
Test Condition: 480V, 16A, 23Ohm, 15V
Gate Charge: 67 nC
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 34 A
Power - Max: 45 W
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XDP710002XUMA1 Infineon-XDP710-002-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dc186655e54f3
XDP710002XUMA1
Виробник: Infineon Technologies
Description: CONTROLLER
Features: Fault Timeout, Latched Fault, OVP, PMBus, UVLO
Packaging: Tape & Reel (TR)
Package / Case: 29-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Hot Swap Controller
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 5.5V ~ 80V
Applications: General Purpose
Internal Switch(s): Yes
Current - Output (Max): 1.5A
Supplier Device Package: 29-VQFN (6x6)
Programmable Features: Current Limit, Fault Timeout, OVP, UVLO
Number of Channels: 1
Current - Supply: 7 mA
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XDP710002XUMA1 Infineon-XDP710-002-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dc186655e54f3
XDP710002XUMA1
Виробник: Infineon Technologies
Description: CONTROLLER
Features: Fault Timeout, Latched Fault, OVP, PMBus, UVLO
Packaging: Cut Tape (CT)
Package / Case: 29-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Hot Swap Controller
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 5.5V ~ 80V
Applications: General Purpose
Internal Switch(s): Yes
Current - Output (Max): 1.5A
Supplier Device Package: 29-VQFN (6x6)
Programmable Features: Current Limit, Fault Timeout, OVP, UVLO
Number of Channels: 1
Current - Supply: 7 mA
на замовлення 985 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+602.43 грн
10+449.53 грн
25+416.86 грн
100+357.56 грн
250+341.52 грн
500+331.85 грн
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CY15V104QN-20LPXC Infineon-CY15B104QN_CY15V104QN_Excelon(TM)_LP_4-Mbit_(512K_X_8)_Serial_(SPI)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7709b704a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integr
CY15V104QN-20LPXC
Виробник: Infineon Technologies
Description: IC FRAM 4MBIT SPI 20MHZ 8GQFN
Packaging: Tray
Package / Case: 8-UQFN
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-GQFN (3.23x3.28)
Memory Interface: SPI
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY7C63310-PXC download
CY7C63310-PXC
Виробник: Infineon Technologies
Description: IC USB PERIPHERAL CTRLR 16-DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Function: Controller
Interface: GPIO, SPI
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.5V
Current - Supply: 40mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 16-PDIP
DigiKey Programmable: Not Verified
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CY7C63801-PXC download
CY7C63801-PXC
Виробник: Infineon Technologies
Description: IC USB PERIPHERAL CTRLR 16-DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Function: Controller
Interface: GPIO, SPI
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.5V
Current - Supply: 40mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 16-PDIP
DigiKey Programmable: Not Verified
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CY62256LL-70PXC description CY62256%20%28Jul05%29.pdf
CY62256LL-70PXC
Виробник: Infineon Technologies
Description: IC SRAM 256KBIT PARALLEL 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-PDIP
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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TLS850F3TUV50BOARDTOBO1 Infineon-Z8F80607085_TLS850F3TUVXX_Demoboard-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f84ce5c094e35
TLS850F3TUV50BOARDTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR TLS850F3TUV50
Packaging: Box
Voltage - Output: 5V
Voltage - Input: 3V ~ 42V
Current - Output: 500mA
Contents: Board(s)
Regulator Type: Positive Fixed
Utilized IC / Part: TLS850F3TUV50
Channels per IC: 1 - Single
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+6625.12 грн
В кошику  од. на суму  грн.
IDYH25G200C5XKSA1
IDYH25G200C5XKSA1
Виробник: Infineon Technologies
Description: DIODE SIC 2000V 77A PGTO247U04
Packaging: Tube
Package / Case: TO-247-4 Variant
Mounting Type: Through Hole
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1140pF @ 1V, 100kHz
Current - Average Rectified (Io): 77A
Supplier Device Package: PG-TO247-U04
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 25 A
Current - Reverse Leakage @ Vr: 375 µA @ 2000 V
на замовлення 56 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1560.58 грн
30+945.91 грн
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CY8CLED164-28PVXI
Виробник: Infineon Technologies
Description: PROGRAMMABLE SYSTEM ON A CHIP
Mounting Type: Surface Mount
DigiKey Programmable: Not Verified
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IPZA60R120P7XKSA1 Infineon-IPZA60R120P7-DS-v02_00-EN.pdf?fileId=5546d462602a9dc80160454dfa181953
IPZA60R120P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 26A TO247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 8.2A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 410µA
Supplier Device Package: PG-TO247-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
122+187.41 грн
Мінімальне замовлення: 122
В кошику  од. на суму  грн.
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