Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (148397) > Сторінка 741 з 2474
Фото | Назва | Виробник | Інформація |
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BGT24ATR22E6433XUMA1 | Infineon Technologies |
Description: BGT24ATR22E6433XUMA1 Packaging: Cut Tape (CT) Package / Case: 32-PowerVFQFN Mounting Type: Surface Mount Function: VCO Frequency: 24GHz ~ 24.25GHz RF Type: Radar Secondary Attributes: ADC Supplier Device Package: PG-VQFN-32-9 Grade: Automotive Qualification: AEC-Q100 |
на замовлення 296 шт: термін постачання 21-31 дні (днів) |
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TLE9274QXV33XUMA2 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Number of Outputs: 3 Voltage - Input: 4.5V ~ 28V Operating Temperature: -40°C ~ 150°C (TJ) Applications: Converter, Automotive Supplier Device Package: PG-VQFN-48-31 Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
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CY241V8ASXC-12 | Infineon Technologies |
![]() Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: Clock Frequency - Max: 74.25MHz Type: Clock Generator, Fanout Distribution Input: Clock Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3.135V ~ 3.465V Ratio - Input:Output: 1:2 Differential - Input:Output: No/No Supplier Device Package: 8-SOIC PLL: Yes with Bypass Divider/Multiplier: Yes/No Number of Circuits: 1 DigiKey Programmable: Not Verified |
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EVALCO25VMINIBOARDTOBO1 | Infineon Technologies |
![]() Packaging: Box Sensitivity: ±3% Interface: I2C, PWM, UART Voltage - Supply: 3.3V Sensor Type: Carbon Dioxide (CO2) Utilized IC / Part: PAS CO2 Supplied Contents: Board(s) Embedded: Yes, MCU |
на замовлення 16 шт: термін постачання 21-31 дні (днів) |
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EVALCO25VSENSOR2GOTOBO1 | Infineon Technologies |
![]() Packaging: Box Sensitivity: ±3% Interface: I2C, PWM, UART Voltage - Supply: 3.3V Sensor Type: Carbon Dioxide (CO2) Utilized IC / Part: PAS CO2 Supplied Contents: Board(s) Embedded: Yes, MCU |
на замовлення 27 шт: термін постачання 21-31 дні (днів) |
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PASCO2V15AUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Output: I2C, PWM, UART Type: Carbon Dioxide (CO2) Accuracy: ±5% Operating Temperature: 0°C ~ 50°C Voltage - Supply: 4.45V ~ 5.5V Oxygen Range: 0 mbar ~ 800 bar |
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PASCO2V15AUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Output: I2C, PWM, UART Type: Carbon Dioxide (CO2) Accuracy: ±5% Operating Temperature: 0°C ~ 50°C Voltage - Supply: 4.45V ~ 5.5V Oxygen Range: 0 mbar ~ 800 bar |
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PASCO2V01AUMA3 | Infineon Technologies |
Description: SENSOR CARBON DIOXIDE I2C OUTPUT Packaging: Tape & Reel (TR) Output: I2C, PWM, UART Type: Carbon Dioxide (CO2) Accuracy: ±3% Operating Temperature: 0°C ~ 50°C Voltage - Supply: 10.8V ~ 13.2V Oxygen Range: 0 mbar ~ 800 bar |
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PASCO2V11AUMA1 | Infineon Technologies |
Description: SENSOR ENVIRONMENTAL Packaging: Tape & Reel (TR) |
товару немає в наявності |
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PASCO2V01AUMA2 | Infineon Technologies |
Description: SENSOR CARBON DIOXIDE I2C OUTPUT Packaging: Tape & Reel (TR) Output: I2C, PWM, UART Type: Carbon Dioxide (CO2) Operating Temperature: 0°C ~ 50°C (TA) Voltage - Supply: 3V ~ 3.6V, 10.8V ~ 13.2V Current - Supply: 800µA, 6.1mA |
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4DIR1420HAXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Type: SPI Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.7V ~ 6.5V Data Rate: 40Mbps Technology: Magnetic Coupling Voltage - Isolation: 5700Vrms Inputs - Side 1/Side 2: 3/1 Supplier Device Package: PG-DSO-16-46 Rise / Fall Time (Typ): 4ns, 4ns (Max) Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 33ns, 33ns Isolated Power: Yes Channel Type: Unidirectional Pulse Width Distortion (Max): 3ns Grade: Automotive Number of Channels: 4 Qualification: AEC-Q100 |
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4DIR1420HAXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Type: SPI Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.7V ~ 6.5V Data Rate: 40Mbps Technology: Magnetic Coupling Voltage - Isolation: 5700Vrms Inputs - Side 1/Side 2: 3/1 Supplier Device Package: PG-DSO-16-46 Rise / Fall Time (Typ): 4ns, 4ns (Max) Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 33ns, 33ns Isolated Power: Yes Channel Type: Unidirectional Pulse Width Distortion (Max): 3ns Grade: Automotive Number of Channels: 4 Qualification: AEC-Q100 |
на замовлення 1486 шт: термін постачання 21-31 дні (днів) |
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PEB22320NV2.1 | Infineon Technologies |
Description: CLOCK GENERATOR Packaging: Bulk DigiKey Programmable: Not Verified |
на замовлення 415 шт: термін постачання 21-31 дні (днів) |
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CY4603 | Infineon Technologies |
![]() Packaging: Box Function: USB 3.0 Hub Type: Interface Contents: Board(s), Cable(s), Power Supply Utilized IC / Part: CYUSB3314 Primary Attributes: 4-Channel (Quad) Secondary Attributes: I2C Interface(s) |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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BGSX24MU16E6327XTSA1 | Infineon Technologies |
Description: IC RF SWITCH DP4T 5GHZ ULGA16-1 Features: DC Blocked Packaging: Tape & Reel (TR) Package / Case: 16-UFLGA Exposed Pad Mounting Type: Surface Mount Circuit: DP4T RF Type: GSM, LTE, WCDMA Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 3.4V Insertion Loss: 1dB Frequency Range: 100MHz ~ 5GHz Topology: Reflective Test Frequency: 5GHz Isolation: 34dB Supplier Device Package: PG-ULGA-16-1 IIP3: 77dBm |
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S29GL064N90FAI040 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (13x11) Write Cycle Time - Word, Page: 90ns Memory Interface: Parallel Access Time: 90 ns Memory Organization: 8M x 8, 4M x 16 DigiKey Programmable: Not Verified |
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S29GL064N90FFIS10 | Infineon Technologies |
Description: IC FLASH 64MBIT PARALLEL 64FBGA Packaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (13x11) Write Cycle Time - Word, Page: 90ns Memory Interface: Parallel Access Time: 90 ns Memory Organization: 8M x 8, 4M x 16 DigiKey Programmable: Not Verified |
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S29GL064N90FFA040 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (13x11) Grade: Automotive Write Cycle Time - Word, Page: 90ns Memory Interface: Parallel Access Time: 90 ns Memory Organization: 8M x 8, 4M x 16 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DD380N22KXPSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 393A Supplier Device Package: BG-PB50AT-1 Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 2200 V Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 800 A Current - Reverse Leakage @ Vr: 25 mA @ 2200 V |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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DD380N22KOFXPSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 393A Supplier Device Package: BG-PB50AT-1 Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 2200 V Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 800 A Current - Reverse Leakage @ Vr: 25 mA @ 2200 V |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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DD360N22KHPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Diode Type: Single Phase Operating Temperature: 150°C (TJ) Technology: Standard Supplier Device Package: BG-PB50AT-1 Voltage - Peak Reverse (Max): 2.2 kV Current - Average Rectified (Io): 360 A Current - Reverse Leakage @ Vr: 25 mA @ 2200 V |
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PSB2134HV2.2 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 64-QFP Mounting Type: Surface Mount Function: CODEC Filter Interface: IOM-2 PCM, SPI Voltage - Supply: 5V Current - Supply: 26mA Supplier Device Package: P-MQFP-64 Number of Circuits: 4 Power (Watts): 130 mW |
на замовлення 5617 шт: термін постачання 21-31 дні (днів) |
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PSB2134HV1.4GD | Infineon Technologies |
Description: SICOFI-TE FOUR CH CODEC FILTER Packaging: Bulk |
на замовлення 850 шт: термін постачання 21-31 дні (днів) |
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IPB65R225C7ATMA2 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 4V @ 240µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V |
на замовлення 868 шт: термін постачання 21-31 дні (днів) |
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IMT40R015M2HXTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 111A (Tc) Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V Power Dissipation (Max): 3.8W (Ta), 341W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 9.7mA Supplier Device Package: PG-HSOF-8-2 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IMT40R015M2HXTMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 111A (Tc) Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V Power Dissipation (Max): 3.8W (Ta), 341W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 9.7mA Supplier Device Package: PG-HSOF-8-2 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 200 V |
на замовлення 1917 шт: термін постачання 21-31 дні (днів) |
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IMBG40R015M2HXTMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 111A (Tc) Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V Power Dissipation (Max): 3.8W (Ta), 341W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 9.7mA Supplier Device Package: PG-TO263-7-11 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IMBG40R015M2HXTMA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 111A (Tc) Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V Power Dissipation (Max): 3.8W (Ta), 341W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 9.7mA Supplier Device Package: PG-TO263-7-11 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 200 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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IPB65R225C7ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 4V @ 240µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IDWD120E120D7XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 5A (Io) Reverse Recovery Time (trr): 215 ns Technology: Standard Current - Average Rectified (Io): 177A Supplier Device Package: PG-TO247-2-2 Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3 V @ 120 A Current - Reverse Leakage @ Vr: 20 µA @ 1200 V |
на замовлення 184 шт: термін постачання 21-31 дні (днів) |
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IPAW70R950CEXKSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 150µA Supplier Device Package: PG-TO220-3-FP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V |
на замовлення 10800 шт: термін постачання 21-31 дні (днів) |
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CY91F527USDPMC-GSE2 | Infineon Technologies |
Description: IC MCU 32BT 1.5625MB FLSH 176QFP Packaging: Tray Package / Case: 176-LQFP Mounting Type: Surface Mount Speed: 128MHz Program Memory Size: 1.5625MB (1.5625M x 8) RAM Size: 208K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH EEPROM Size: 64K x 8 Core Processor: FR81S Data Converters: A/D 48x12b SAR; D/A 2x8b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, EBI/EMI, FlexRay, I2C, LINbus, UART/USART Peripherals: DMA, LVD, PWM, WDT Supplier Device Package: 176-LQFP (24x24) Number of I/O: 115 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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CY3201-06 | Infineon Technologies |
Description: MCU EMULATOR POD FOR 20-SSOP Packaging: Bulk For Use With/Related Products: CY8C26233 Accessory Type: Emulation Pod |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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CY3201-07 | Infineon Technologies |
Description: MCU EMULATOR POD FOR 28-SOIC Packaging: Bulk For Use With/Related Products: CY8C26443 Accessory Type: Emulation Pod |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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CY3207ISSP | Infineon Technologies |
![]() Packaging: Bulk For Use With/Related Products: PSoC Mixed Signal Arrays Type: Programmer Contents: Board(s), Cable(s), Power Supply |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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CY3203A-CAPSENSE | Infineon Technologies |
![]() Packaging: Bulk Interface: LCD Voltage - Supply: 5V, USB Sensor Type: Touch, Capacitive Utilized IC / Part: CY8C20x34 Supplied Contents: Board(s), Cable(s), Accessories Embedded: Yes, MCU, 8-Bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TLE94108ELXUMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Interface: SPI Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (8) Voltage - Supply: 3V ~ 5.5V Rds On (Typ): 850mOhm LS, 850mOhm HS Applications: AC Motors, DC Motors, General Purpose Current - Output / Channel: 500mA Current - Peak Output: 2A Technology: Power MOSFET Voltage - Load: 5.5V ~ 20V Supplier Device Package: PG-SSOP-24-4 Fault Protection: Over Temperature, Short Circuit, UVLO Load Type: Inductive |
на замовлення 8914 шт: термін постачання 21-31 дні (днів) |
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TLE7233EMXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 4 Interface: SPI Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 1Ohm Voltage - Load: 4.5V ~ 5.5V Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Current - Output (Max): 470mA Ratio - Input:Output: 1:4 Supplier Device Package: PG-SSOP-24-4 Fault Protection: Open Load Detect, Over Temperature Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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DZ540N26KHPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 732A Supplier Device Package: Module Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 2600 V Voltage - Forward (Vf) (Max) @ If: 1.64 V @ 2200 A Current - Reverse Leakage @ Vr: 40 mA @ 2600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
T740N26TOFPRXOSA1 | Infineon Technologies |
Description: DIODE BG-T5814K0-1 Packaging: Tray Package / Case: TO-200AB, A-PUK Mounting Type: Clamp On Operating Temperature: -40°C ~ 125°C Structure: Single Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 13000A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 745 A Voltage - Gate Trigger (Vgt) (Max): 2.2 V Current - On State (It (RMS)) (Max): 1500 A Voltage - Off State: 2.6 kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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ISZ173N15NM6ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 48A (Tc) Rds On (Max) @ Id, Vgs: 16.3mOhm @ 16A, 15V Power Dissipation (Max): 2.5W (Ta), 94W (Tc) Vgs(th) (Max) @ Id: 4V @ 35µA Supplier Device Package: PG-TSDSON-8 FL Drive Voltage (Max Rds On, Min Rds On): 8V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 75 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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ISZ173N15NM6ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 48A (Tc) Rds On (Max) @ Id, Vgs: 16.3mOhm @ 16A, 15V Power Dissipation (Max): 2.5W (Ta), 94W (Tc) Vgs(th) (Max) @ Id: 4V @ 35µA Supplier Device Package: PG-TSDSON-8 FL Drive Voltage (Max Rds On, Min Rds On): 8V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 75 V |
на замовлення 4964 шт: термін постачання 21-31 дні (днів) |
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IPQC60R010S7AXTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V Power Dissipation (Max): 694W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 3.08mA Supplier Device Package: PG-HDSOP-22 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IPQC60R010S7AXTMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V Power Dissipation (Max): 694W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 3.08mA Supplier Device Package: PG-HDSOP-22 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V Qualification: AEC-Q101 |
на замовлення 660 шт: термін постачання 21-31 дні (днів) |
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CY29942AXCT | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 32-LQFP Number of Circuits: 1 Mounting Type: Surface Mount Output: LVCMOS, LVTTL Type: Fanout Buffer (Distribution) Input: LVCMOS, LVTTL Operating Temperature: 0°C ~ 70°C Voltage - Supply: 2.375V ~ 3.465V Ratio - Input:Output: 1:18 Differential - Input:Output: No/No Supplier Device Package: 32-TQFP (7x7) Frequency - Max: 200 MHz |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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CY29942AXI | Infineon Technologies |
![]() Packaging: Tray Package / Case: 32-LQFP Number of Circuits: 1 Mounting Type: Surface Mount Output: LVCMOS, LVTTL Type: Fanout Buffer (Distribution) Input: LVCMOS, LVTTL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.375V ~ 3.465V Ratio - Input:Output: 1:18 Differential - Input:Output: No/No Supplier Device Package: 32-TQFP (7x7) Frequency - Max: 200 MHz |
на замовлення 554 шт: термін постачання 21-31 дні (днів) |
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CY29942AXI | Infineon Technologies |
![]() Packaging: Tray Package / Case: 32-LQFP Number of Circuits: 1 Mounting Type: Surface Mount Output: LVCMOS, LVTTL Type: Fanout Buffer (Distribution) Input: LVCMOS, LVTTL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.375V ~ 3.465V Ratio - Input:Output: 1:18 Differential - Input:Output: No/No Supplier Device Package: 32-TQFP (7x7) Frequency - Max: 200 MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TLE5046MTICPW2100HALA1 | Infineon Technologies |
Description: SPEED & CURRENT SENSORS Packaging: Tape & Box (TB) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
DD600N18KXPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 600A Supplier Device Package: BG-PB60E2A-1 Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 1800 V Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1.8 kA Current - Reverse Leakage @ Vr: 40 mA @ 1800 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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IRAM136-1060A | Infineon Technologies |
![]() Packaging: Tube Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 2000Vrms Current: 10 A Voltage: 600 V |
на замовлення 99 шт: термін постачання 21-31 дні (днів) |
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IRAM136-1060A | Infineon Technologies |
![]() Packaging: Tube Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 2000Vrms Current: 10 A Voltage: 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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CY23EP05SXC-1HT | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: LVCMOS Frequency - Max: 200MHz, 220MHz Type: Fanout Buffer (Distribution), Zero Delay Buffer Input: LVCMOS, LVTTL Operating Temperature: 0°C ~ 70°C Voltage - Supply: 2.5V, 3.3V Ratio - Input:Output: 1:5 Differential - Input:Output: No/No Supplier Device Package: 8-SOIC PLL: Yes Divider/Multiplier: No/No Number of Circuits: 1 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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S29PL032J55BFI070 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 48-VFBGA Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 48-VFBGA (8.15x6.15) Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Access Time: 55 ns Memory Organization: 2M x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TLV49462LHALA1 | Infineon Technologies |
![]() Features: Temperature Compensated Packaging: Bulk Package / Case: 3-SSIP, SSO-3-02 Output Type: Open Drain Polarization: South Pole Mounting Type: Through Hole Function: Latch Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 18V Technology: Hall Effect Sensing Range: 3.5mT Trip, -3.5mT Release Current - Output (Max): 20mA Current - Supply (Max): 6mA Supplier Device Package: PG-SSO-3-2 Test Condition: -40°C ~ 85°C Grade: Automotive Qualification: AEC-Q100 |
на замовлення 28000 шт: термін постачання 21-31 дні (днів) |
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SLS32AIA010MSUSON10XTMA2 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 10-UFDFN Exposed Pad Mounting Type: Surface Mount Interface: I2C RAM Size: External Operating Temperature: -25°C ~ 85°C (TA) Voltage - Supply: 1.62V ~ 5.5V Controller Series: OPTIGA™ Trust M Program Memory Type: NVM (10kB) Applications: Trusted Platform Module (TPM) Core Processor: 16-Bit Supplier Device Package: PG-USON-10-2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BSC034N03LSGATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TDSON-8-5 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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CY7C2263KV18-550BZXC | Infineon Technologies |
![]() Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 36Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II+ Clock Frequency: 550 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Memory Organization: 2M x 18 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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CY7C2163KV18-450BZXI | Infineon Technologies |
![]() Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II+ Clock Frequency: 450 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Memory Organization: 1M x 18 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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CY7C2245KV18-450BZXI | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 36Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II+ Clock Frequency: 450 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Memory Organization: 1M x 36 DigiKey Programmable: Not Verified |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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CY9AF111LPMC-G-MJE1 | Infineon Technologies |
Description: IC MCU 32BIT LQFP Packaging: Tray DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. |
BGT24ATR22E6433XUMA1 |
Виробник: Infineon Technologies
Description: BGT24ATR22E6433XUMA1
Packaging: Cut Tape (CT)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Function: VCO
Frequency: 24GHz ~ 24.25GHz
RF Type: Radar
Secondary Attributes: ADC
Supplier Device Package: PG-VQFN-32-9
Grade: Automotive
Qualification: AEC-Q100
Description: BGT24ATR22E6433XUMA1
Packaging: Cut Tape (CT)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Function: VCO
Frequency: 24GHz ~ 24.25GHz
RF Type: Radar
Secondary Attributes: ADC
Supplier Device Package: PG-VQFN-32-9
Grade: Automotive
Qualification: AEC-Q100
на замовлення 296 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 913.77 грн |
10+ | 668.24 грн |
25+ | 615.20 грн |
100+ | 522.62 грн |
250+ | 496.53 грн |
TLE9274QXV33XUMA2 |
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Виробник: Infineon Technologies
Description: OPTIREG SYST BASIS CHIPS
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 3
Voltage - Input: 4.5V ~ 28V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Converter, Automotive
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Qualification: AEC-Q100
Description: OPTIREG SYST BASIS CHIPS
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 3
Voltage - Input: 4.5V ~ 28V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Converter, Automotive
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Qualification: AEC-Q100
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В кошику
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CY241V8ASXC-12 |
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Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 74.25MHz
Type: Clock Generator, Fanout Distribution
Input: Clock
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 74.25MHz
Type: Clock Generator, Fanout Distribution
Input: Clock
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
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EVALCO25VMINIBOARDTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD
Packaging: Box
Sensitivity: ±3%
Interface: I2C, PWM, UART
Voltage - Supply: 3.3V
Sensor Type: Carbon Dioxide (CO2)
Utilized IC / Part: PAS CO2
Supplied Contents: Board(s)
Embedded: Yes, MCU
Description: EVAL BOARD
Packaging: Box
Sensitivity: ±3%
Interface: I2C, PWM, UART
Voltage - Supply: 3.3V
Sensor Type: Carbon Dioxide (CO2)
Utilized IC / Part: PAS CO2
Supplied Contents: Board(s)
Embedded: Yes, MCU
на замовлення 16 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1539.36 грн |
EVALCO25VSENSOR2GOTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD
Packaging: Box
Sensitivity: ±3%
Interface: I2C, PWM, UART
Voltage - Supply: 3.3V
Sensor Type: Carbon Dioxide (CO2)
Utilized IC / Part: PAS CO2
Supplied Contents: Board(s)
Embedded: Yes, MCU
Description: EVAL BOARD
Packaging: Box
Sensitivity: ±3%
Interface: I2C, PWM, UART
Voltage - Supply: 3.3V
Sensor Type: Carbon Dioxide (CO2)
Utilized IC / Part: PAS CO2
Supplied Contents: Board(s)
Embedded: Yes, MCU
на замовлення 27 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 2531.72 грн |
PASCO2V15AUMA1 |
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Виробник: Infineon Technologies
Description: PASCO2V15AUMA1
Packaging: Tape & Reel (TR)
Output: I2C, PWM, UART
Type: Carbon Dioxide (CO2)
Accuracy: ±5%
Operating Temperature: 0°C ~ 50°C
Voltage - Supply: 4.45V ~ 5.5V
Oxygen Range: 0 mbar ~ 800 bar
Description: PASCO2V15AUMA1
Packaging: Tape & Reel (TR)
Output: I2C, PWM, UART
Type: Carbon Dioxide (CO2)
Accuracy: ±5%
Operating Temperature: 0°C ~ 50°C
Voltage - Supply: 4.45V ~ 5.5V
Oxygen Range: 0 mbar ~ 800 bar
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В кошику
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PASCO2V15AUMA1 |
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Виробник: Infineon Technologies
Description: PASCO2V15AUMA1
Packaging: Cut Tape (CT)
Output: I2C, PWM, UART
Type: Carbon Dioxide (CO2)
Accuracy: ±5%
Operating Temperature: 0°C ~ 50°C
Voltage - Supply: 4.45V ~ 5.5V
Oxygen Range: 0 mbar ~ 800 bar
Description: PASCO2V15AUMA1
Packaging: Cut Tape (CT)
Output: I2C, PWM, UART
Type: Carbon Dioxide (CO2)
Accuracy: ±5%
Operating Temperature: 0°C ~ 50°C
Voltage - Supply: 4.45V ~ 5.5V
Oxygen Range: 0 mbar ~ 800 bar
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PASCO2V01AUMA3 |
Виробник: Infineon Technologies
Description: SENSOR CARBON DIOXIDE I2C OUTPUT
Packaging: Tape & Reel (TR)
Output: I2C, PWM, UART
Type: Carbon Dioxide (CO2)
Accuracy: ±3%
Operating Temperature: 0°C ~ 50°C
Voltage - Supply: 10.8V ~ 13.2V
Oxygen Range: 0 mbar ~ 800 bar
Description: SENSOR CARBON DIOXIDE I2C OUTPUT
Packaging: Tape & Reel (TR)
Output: I2C, PWM, UART
Type: Carbon Dioxide (CO2)
Accuracy: ±3%
Operating Temperature: 0°C ~ 50°C
Voltage - Supply: 10.8V ~ 13.2V
Oxygen Range: 0 mbar ~ 800 bar
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PASCO2V01AUMA2 |
Виробник: Infineon Technologies
Description: SENSOR CARBON DIOXIDE I2C OUTPUT
Packaging: Tape & Reel (TR)
Output: I2C, PWM, UART
Type: Carbon Dioxide (CO2)
Operating Temperature: 0°C ~ 50°C (TA)
Voltage - Supply: 3V ~ 3.6V, 10.8V ~ 13.2V
Current - Supply: 800µA, 6.1mA
Description: SENSOR CARBON DIOXIDE I2C OUTPUT
Packaging: Tape & Reel (TR)
Output: I2C, PWM, UART
Type: Carbon Dioxide (CO2)
Operating Temperature: 0°C ~ 50°C (TA)
Voltage - Supply: 3V ~ 3.6V, 10.8V ~ 13.2V
Current - Supply: 800µA, 6.1mA
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4DIR1420HAXUMA1 |
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Виробник: Infineon Technologies
Description: DIGITAL ISOLATORS
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 6.5V
Data Rate: 40Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: PG-DSO-16-46
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 33ns, 33ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 3ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
Description: DIGITAL ISOLATORS
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 6.5V
Data Rate: 40Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: PG-DSO-16-46
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 33ns, 33ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 3ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
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В кошику
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4DIR1420HAXUMA1 |
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Виробник: Infineon Technologies
Description: DIGITAL ISOLATORS
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 6.5V
Data Rate: 40Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: PG-DSO-16-46
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 33ns, 33ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 3ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
Description: DIGITAL ISOLATORS
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 6.5V
Data Rate: 40Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: PG-DSO-16-46
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 33ns, 33ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 3ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
на замовлення 1486 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 196.09 грн |
10+ | 126.06 грн |
100+ | 97.00 грн |
500+ | 82.29 грн |
PEB22320NV2.1 |
Виробник: Infineon Technologies
Description: CLOCK GENERATOR
Packaging: Bulk
DigiKey Programmable: Not Verified
Description: CLOCK GENERATOR
Packaging: Bulk
DigiKey Programmable: Not Verified
на замовлення 415 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
16+ | 1414.02 грн |
CY4603 |
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Виробник: Infineon Technologies
Description: EVAL BOARD HX3 USB HUB CYUSB3314
Packaging: Box
Function: USB 3.0 Hub
Type: Interface
Contents: Board(s), Cable(s), Power Supply
Utilized IC / Part: CYUSB3314
Primary Attributes: 4-Channel (Quad)
Secondary Attributes: I2C Interface(s)
Description: EVAL BOARD HX3 USB HUB CYUSB3314
Packaging: Box
Function: USB 3.0 Hub
Type: Interface
Contents: Board(s), Cable(s), Power Supply
Utilized IC / Part: CYUSB3314
Primary Attributes: 4-Channel (Quad)
Secondary Attributes: I2C Interface(s)
на замовлення 10 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 7157.73 грн |
BGSX24MU16E6327XTSA1 |
Виробник: Infineon Technologies
Description: IC RF SWITCH DP4T 5GHZ ULGA16-1
Features: DC Blocked
Packaging: Tape & Reel (TR)
Package / Case: 16-UFLGA Exposed Pad
Mounting Type: Surface Mount
Circuit: DP4T
RF Type: GSM, LTE, WCDMA
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.4V
Insertion Loss: 1dB
Frequency Range: 100MHz ~ 5GHz
Topology: Reflective
Test Frequency: 5GHz
Isolation: 34dB
Supplier Device Package: PG-ULGA-16-1
IIP3: 77dBm
Description: IC RF SWITCH DP4T 5GHZ ULGA16-1
Features: DC Blocked
Packaging: Tape & Reel (TR)
Package / Case: 16-UFLGA Exposed Pad
Mounting Type: Surface Mount
Circuit: DP4T
RF Type: GSM, LTE, WCDMA
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.4V
Insertion Loss: 1dB
Frequency Range: 100MHz ~ 5GHz
Topology: Reflective
Test Frequency: 5GHz
Isolation: 34dB
Supplier Device Package: PG-ULGA-16-1
IIP3: 77dBm
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S29GL064N90FAI040 |
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Виробник: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
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S29GL064N90FFIS10 |
Виробник: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
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S29GL064N90FFA040 |
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Виробник: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Grade: Automotive
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Grade: Automotive
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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DD380N22KXPSA1 |
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Виробник: Infineon Technologies
Description: DIODE MOD GP 2200V 393A BGPB50AT
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 393A
Supplier Device Package: BG-PB50AT-1
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 800 A
Current - Reverse Leakage @ Vr: 25 mA @ 2200 V
Description: DIODE MOD GP 2200V 393A BGPB50AT
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 393A
Supplier Device Package: BG-PB50AT-1
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 800 A
Current - Reverse Leakage @ Vr: 25 mA @ 2200 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 14036.81 грн |
DD380N22KOFXPSA1 |
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Виробник: Infineon Technologies
Description: DIODE MOD GP 2200V 393A BGPB50AT
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 393A
Supplier Device Package: BG-PB50AT-1
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 800 A
Current - Reverse Leakage @ Vr: 25 mA @ 2200 V
Description: DIODE MOD GP 2200V 393A BGPB50AT
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 393A
Supplier Device Package: BG-PB50AT-1
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 800 A
Current - Reverse Leakage @ Vr: 25 mA @ 2200 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 14036.81 грн |
DD360N22KHPSA1 |
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Виробник: Infineon Technologies
Description: BRIDGE RECT 1P 2.2KV 360A PB50AT
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: 150°C (TJ)
Technology: Standard
Supplier Device Package: BG-PB50AT-1
Voltage - Peak Reverse (Max): 2.2 kV
Current - Average Rectified (Io): 360 A
Current - Reverse Leakage @ Vr: 25 mA @ 2200 V
Description: BRIDGE RECT 1P 2.2KV 360A PB50AT
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: 150°C (TJ)
Technology: Standard
Supplier Device Package: BG-PB50AT-1
Voltage - Peak Reverse (Max): 2.2 kV
Current - Average Rectified (Io): 360 A
Current - Reverse Leakage @ Vr: 25 mA @ 2200 V
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PSB2134HV2.2 |
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Виробник: Infineon Technologies
Description: SICOFI-TE FOUR CH CODEC FILTER
Packaging: Bulk
Package / Case: 64-QFP
Mounting Type: Surface Mount
Function: CODEC Filter
Interface: IOM-2 PCM, SPI
Voltage - Supply: 5V
Current - Supply: 26mA
Supplier Device Package: P-MQFP-64
Number of Circuits: 4
Power (Watts): 130 mW
Description: SICOFI-TE FOUR CH CODEC FILTER
Packaging: Bulk
Package / Case: 64-QFP
Mounting Type: Surface Mount
Function: CODEC Filter
Interface: IOM-2 PCM, SPI
Voltage - Supply: 5V
Current - Supply: 26mA
Supplier Device Package: P-MQFP-64
Number of Circuits: 4
Power (Watts): 130 mW
на замовлення 5617 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
33+ | 651.04 грн |
PSB2134HV1.4GD |
на замовлення 850 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
31+ | 707.36 грн |
IPB65R225C7ATMA2 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 11A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
Description: MOSFET N-CH 650V 11A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
на замовлення 868 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 227.85 грн |
10+ | 143.04 грн |
100+ | 99.38 грн |
500+ | 75.71 грн |
IMT40R015M2HXTMA1 |
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Виробник: Infineon Technologies
Description: SIC-MOS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 111A (Tc)
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 200 V
Description: SIC-MOS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 111A (Tc)
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 200 V
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IMT40R015M2HXTMA1 |
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Виробник: Infineon Technologies
Description: SIC-MOS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 111A (Tc)
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 200 V
Description: SIC-MOS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 111A (Tc)
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 200 V
на замовлення 1917 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1038.41 грн |
10+ | 701.65 грн |
100+ | 588.20 грн |
500+ | 508.21 грн |
1000+ | 494.16 грн |
IMBG40R015M2HXTMA1 |
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Виробник: Infineon Technologies
Description: SIC-MOS
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 111A (Tc)
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.7mA
Supplier Device Package: PG-TO263-7-11
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 200 V
Description: SIC-MOS
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 111A (Tc)
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.7mA
Supplier Device Package: PG-TO263-7-11
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 200 V
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IMBG40R015M2HXTMA1 |
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Виробник: Infineon Technologies
Description: SIC-MOS
Packaging: Tray
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 111A (Tc)
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.7mA
Supplier Device Package: PG-TO263-7-11
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 200 V
Description: SIC-MOS
Packaging: Tray
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 111A (Tc)
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.7mA
Supplier Device Package: PG-TO263-7-11
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 200 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1000+ | 616.39 грн |
IPB65R225C7ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 11A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
Description: MOSFET N-CH 650V 11A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
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IDWD120E120D7XKSA1 |
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Виробник: Infineon Technologies
Description: DIODE GEN PURP 1200V 177A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 5A (Io)
Reverse Recovery Time (trr): 215 ns
Technology: Standard
Current - Average Rectified (Io): 177A
Supplier Device Package: PG-TO247-2-2
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 120 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Description: DIODE GEN PURP 1200V 177A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 5A (Io)
Reverse Recovery Time (trr): 215 ns
Technology: Standard
Current - Average Rectified (Io): 177A
Supplier Device Package: PG-TO247-2-2
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 120 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
на замовлення 184 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 449.34 грн |
10+ | 390.96 грн |
25+ | 372.80 грн |
IPAW70R950CEXKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 7.4A TO220-3-31
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO220-3-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
Description: MOSFET N-CH 700V 7.4A TO220-3-31
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO220-3-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
на замовлення 10800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
483+ | 44.21 грн |
CY91F527USDPMC-GSE2 |
Виробник: Infineon Technologies
Description: IC MCU 32BT 1.5625MB FLSH 176QFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 1.5625MB (1.5625M x 8)
RAM Size: 208K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 48x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, EBI/EMI, FlexRay, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 115
DigiKey Programmable: Not Verified
Description: IC MCU 32BT 1.5625MB FLSH 176QFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 1.5625MB (1.5625M x 8)
RAM Size: 208K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 48x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, EBI/EMI, FlexRay, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 115
DigiKey Programmable: Not Verified
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CY3201-06 |
Виробник: Infineon Technologies
Description: MCU EMULATOR POD FOR 20-SSOP
Packaging: Bulk
For Use With/Related Products: CY8C26233
Accessory Type: Emulation Pod
Description: MCU EMULATOR POD FOR 20-SSOP
Packaging: Bulk
For Use With/Related Products: CY8C26233
Accessory Type: Emulation Pod
на замовлення 4 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 4946.74 грн |
CY3201-07 |
Виробник: Infineon Technologies
Description: MCU EMULATOR POD FOR 28-SOIC
Packaging: Bulk
For Use With/Related Products: CY8C26443
Accessory Type: Emulation Pod
Description: MCU EMULATOR POD FOR 28-SOIC
Packaging: Bulk
For Use With/Related Products: CY8C26443
Accessory Type: Emulation Pod
на замовлення 3 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 4545.83 грн |
CY3207ISSP |
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Виробник: Infineon Technologies
Description: PSOC USB IN-SYSTEM PROGRAMMER
Packaging: Bulk
For Use With/Related Products: PSoC Mixed Signal Arrays
Type: Programmer
Contents: Board(s), Cable(s), Power Supply
Description: PSOC USB IN-SYSTEM PROGRAMMER
Packaging: Bulk
For Use With/Related Products: PSoC Mixed Signal Arrays
Type: Programmer
Contents: Board(s), Cable(s), Power Supply
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CY3203A-CAPSENSE |
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Виробник: Infineon Technologies
Description: KIT EVAL CAPSENSE CSA
Packaging: Bulk
Interface: LCD
Voltage - Supply: 5V, USB
Sensor Type: Touch, Capacitive
Utilized IC / Part: CY8C20x34
Supplied Contents: Board(s), Cable(s), Accessories
Embedded: Yes, MCU, 8-Bit
Description: KIT EVAL CAPSENSE CSA
Packaging: Bulk
Interface: LCD
Voltage - Supply: 5V, USB
Sensor Type: Touch, Capacitive
Utilized IC / Part: CY8C20x34
Supplied Contents: Board(s), Cable(s), Accessories
Embedded: Yes, MCU, 8-Bit
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TLE94108ELXUMA1 |
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Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRVR 500MA 24SSOP
Packaging: Bulk
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (8)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 850mOhm LS, 850mOhm HS
Applications: AC Motors, DC Motors, General Purpose
Current - Output / Channel: 500mA
Current - Peak Output: 2A
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 20V
Supplier Device Package: PG-SSOP-24-4
Fault Protection: Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Description: IC HALF BRIDGE DRVR 500MA 24SSOP
Packaging: Bulk
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (8)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 850mOhm LS, 850mOhm HS
Applications: AC Motors, DC Motors, General Purpose
Current - Output / Channel: 500mA
Current - Peak Output: 2A
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 20V
Supplier Device Package: PG-SSOP-24-4
Fault Protection: Over Temperature, Short Circuit, UVLO
Load Type: Inductive
на замовлення 8914 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
179+ | 127.68 грн |
TLE7233EMXUMA1 |
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Виробник: Infineon Technologies
Description: IC PWR DRIVER N-CHAN 1:4 24-SSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 1Ohm
Voltage - Load: 4.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 470mA
Ratio - Input:Output: 1:4
Supplier Device Package: PG-SSOP-24-4
Fault Protection: Open Load Detect, Over Temperature
Grade: Automotive
Qualification: AEC-Q100
Description: IC PWR DRIVER N-CHAN 1:4 24-SSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 1Ohm
Voltage - Load: 4.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 470mA
Ratio - Input:Output: 1:4
Supplier Device Package: PG-SSOP-24-4
Fault Protection: Open Load Detect, Over Temperature
Grade: Automotive
Qualification: AEC-Q100
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DZ540N26KHPSA1 |
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Виробник: Infineon Technologies
Description: DIODE GEN PURP 2.6KV 732A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 732A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2600 V
Voltage - Forward (Vf) (Max) @ If: 1.64 V @ 2200 A
Current - Reverse Leakage @ Vr: 40 mA @ 2600 V
Description: DIODE GEN PURP 2.6KV 732A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 732A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2600 V
Voltage - Forward (Vf) (Max) @ If: 1.64 V @ 2200 A
Current - Reverse Leakage @ Vr: 40 mA @ 2600 V
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T740N26TOFPRXOSA1 |
Виробник: Infineon Technologies
Description: DIODE BG-T5814K0-1
Packaging: Tray
Package / Case: TO-200AB, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 745 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 2.6 kV
Description: DIODE BG-T5814K0-1
Packaging: Tray
Package / Case: TO-200AB, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 745 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 2.6 kV
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ISZ173N15NM6ATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 16A, 15V
Power Dissipation (Max): 2.5W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 75 V
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 16A, 15V
Power Dissipation (Max): 2.5W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 75 V
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ISZ173N15NM6ATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 16A, 15V
Power Dissipation (Max): 2.5W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 75 V
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 16A, 15V
Power Dissipation (Max): 2.5W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 75 V
на замовлення 4964 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 192.92 грн |
10+ | 138.30 грн |
100+ | 105.71 грн |
500+ | 80.51 грн |
1000+ | 69.86 грн |
2000+ | 68.30 грн |
IPQC60R010S7AXTMA1 |
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Виробник: Infineon Technologies
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Qualification: AEC-Q101
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Qualification: AEC-Q101
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IPQC60R010S7AXTMA1 |
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Виробник: Infineon Technologies
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Qualification: AEC-Q101
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Qualification: AEC-Q101
на замовлення 660 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1436.94 грн |
10+ | 1033.21 грн |
100+ | 948.51 грн |
CY29942AXCT |
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Виробник: Infineon Technologies
Description: IC CLK BUFFER 1:18 200MHZ 32TQFP
Packaging: Bulk
Package / Case: 32-LQFP
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Type: Fanout Buffer (Distribution)
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:18
Differential - Input:Output: No/No
Supplier Device Package: 32-TQFP (7x7)
Frequency - Max: 200 MHz
Description: IC CLK BUFFER 1:18 200MHZ 32TQFP
Packaging: Bulk
Package / Case: 32-LQFP
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Type: Fanout Buffer (Distribution)
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:18
Differential - Input:Output: No/No
Supplier Device Package: 32-TQFP (7x7)
Frequency - Max: 200 MHz
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
19+ | 1136.64 грн |
CY29942AXI |
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Виробник: Infineon Technologies
Description: IC CLK BUFFER 1:18 200MHZ 32TQFP
Packaging: Tray
Package / Case: 32-LQFP
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Type: Fanout Buffer (Distribution)
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:18
Differential - Input:Output: No/No
Supplier Device Package: 32-TQFP (7x7)
Frequency - Max: 200 MHz
Description: IC CLK BUFFER 1:18 200MHZ 32TQFP
Packaging: Tray
Package / Case: 32-LQFP
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Type: Fanout Buffer (Distribution)
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:18
Differential - Input:Output: No/No
Supplier Device Package: 32-TQFP (7x7)
Frequency - Max: 200 MHz
на замовлення 554 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
12+ | 1871.14 грн |
CY29942AXI |
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Виробник: Infineon Technologies
Description: IC CLK BUFFER 1:18 200MHZ 32TQFP
Packaging: Tray
Package / Case: 32-LQFP
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Type: Fanout Buffer (Distribution)
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:18
Differential - Input:Output: No/No
Supplier Device Package: 32-TQFP (7x7)
Frequency - Max: 200 MHz
Description: IC CLK BUFFER 1:18 200MHZ 32TQFP
Packaging: Tray
Package / Case: 32-LQFP
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Type: Fanout Buffer (Distribution)
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:18
Differential - Input:Output: No/No
Supplier Device Package: 32-TQFP (7x7)
Frequency - Max: 200 MHz
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DD600N18KXPSA1 |
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Виробник: Infineon Technologies
Description: DIODE MOD GP 1800V BGPB60E2A-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 600A
Supplier Device Package: BG-PB60E2A-1
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1.8 kA
Current - Reverse Leakage @ Vr: 40 mA @ 1800 V
Description: DIODE MOD GP 1800V BGPB60E2A-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 600A
Supplier Device Package: BG-PB60E2A-1
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1.8 kA
Current - Reverse Leakage @ Vr: 40 mA @ 1800 V
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IRAM136-1060A |
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Виробник: Infineon Technologies
Description: IC MOD PWR HYBRID 600V 10A MOTOR
Packaging: Tube
Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 10 A
Voltage: 600 V
Description: IC MOD PWR HYBRID 600V 10A MOTOR
Packaging: Tube
Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 10 A
Voltage: 600 V
на замовлення 99 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
22+ | 1045.70 грн |
IRAM136-1060A |
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Виробник: Infineon Technologies
Description: IC MOD PWR HYBRID 600V 10A MOTOR
Packaging: Tube
Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 10 A
Voltage: 600 V
Description: IC MOD PWR HYBRID 600V 10A MOTOR
Packaging: Tube
Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 10 A
Voltage: 600 V
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CY23EP05SXC-1HT |
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Виробник: Infineon Technologies
Description: IC FANOUT BUFFER 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 200MHz, 220MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.5V, 3.3V
Ratio - Input:Output: 1:5
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC FANOUT BUFFER 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 200MHz, 220MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.5V, 3.3V
Ratio - Input:Output: 1:5
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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S29PL032J55BFI070 |
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Виробник: Infineon Technologies
Description: IC FLASH 32MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-VFBGA (8.15x6.15)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 2M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 32MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-VFBGA (8.15x6.15)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 2M x 16
DigiKey Programmable: Not Verified
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TLV49462LHALA1 |
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Виробник: Infineon Technologies
Description: MAGNETIC SWITCH LATCH SSO-3-2
Features: Temperature Compensated
Packaging: Bulk
Package / Case: 3-SSIP, SSO-3-02
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 3.5mT Trip, -3.5mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SSO-3-2
Test Condition: -40°C ~ 85°C
Grade: Automotive
Qualification: AEC-Q100
Description: MAGNETIC SWITCH LATCH SSO-3-2
Features: Temperature Compensated
Packaging: Bulk
Package / Case: 3-SSIP, SSO-3-02
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 3.5mT Trip, -3.5mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SSO-3-2
Test Condition: -40°C ~ 85°C
Grade: Automotive
Qualification: AEC-Q100
на замовлення 28000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
868+ | 26.45 грн |
SLS32AIA010MSUSON10XTMA2 |
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Виробник: Infineon Technologies
Description: SECURITY ICS / AUTHENTICATION IC
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
RAM Size: External
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 5.5V
Controller Series: OPTIGA™ Trust M
Program Memory Type: NVM (10kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 16-Bit
Supplier Device Package: PG-USON-10-2
Description: SECURITY ICS / AUTHENTICATION IC
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
RAM Size: External
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 5.5V
Controller Series: OPTIGA™ Trust M
Program Memory Type: NVM (10kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 16-Bit
Supplier Device Package: PG-USON-10-2
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BSC034N03LSGATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 22A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
Description: MOSFET N-CH 30V 22A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 109.56 грн |
10+ | 67.12 грн |
100+ | 44.78 грн |
500+ | 33.03 грн |
1000+ | 30.13 грн |
2000+ | 27.69 грн |
CY7C2263KV18-550BZXC |
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Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
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CY7C2163KV18-450BZXI |
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Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
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CY7C2245KV18-450BZXI |
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Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
на замовлення 20 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 5457.06 грн |
CY9AF111LPMC-G-MJE1 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
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