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IMLT65R026M2HXTMA1 IMLT65R026M2HXTMA1 Infineon Technologies Infineon-IMLT65R026M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92416ca5019294a1439e2a4b Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 34.5A, 20V
Power Dissipation (Max): 365W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 7mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1499 pF @ 400 V
на замовлення 1770 шт:
термін постачання 21-31 дні (днів)
1+817.34 грн
10+545.25 грн
100+458.46 грн
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BTG7003A1EPWDBTOBO1 BTG7003A1EPWDBTOBO1 Infineon Technologies Description: BTG7003A-1EPW DB
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTG7003A-1EPW
Platform: Arduino
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+4055.81 грн
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IGC019S06S1XTMA1 IGC019S06S1XTMA1 Infineon Technologies DS_IGC019S06S1_1_1.pdf Description: MV GAN DISCRETES
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 35A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 12mA
Supplier Device Package: PG-TSON-6-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 30 V
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IGT65R025D2ATMA1 IGT65R025D2ATMA1 Infineon Technologies Infineon-IGT65R025D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a57bd2f0307 Description: IGT65R025D2ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Power Dissipation (Max): 236W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 6.1mA
Supplier Device Package: PG-HSOF-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 400 V
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IGT65R025D2ATMA1 IGT65R025D2ATMA1 Infineon Technologies Infineon-IGT65R025D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a57bd2f0307 Description: IGT65R025D2ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Power Dissipation (Max): 236W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 6.1mA
Supplier Device Package: PG-HSOF-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 400 V
на замовлення 176 шт:
термін постачання 21-31 дні (днів)
1+883.38 грн
10+591.08 грн
100+505.75 грн
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IRFP048NPBF IRFP048NPBF Infineon Technologies IRFP048NPbF.pdf Description: MOSFET N-CH 55V 64A TO247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 37A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
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CY7C1361KVE33-100AXE CY7C1361KVE33-100AXE Infineon Technologies Description: IC SRAM 9MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, Standard
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 256K x 36
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CY8C4025LQI-S413T CY8C4025LQI-S413T Infineon Technologies Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1 Description: IC MCU 32BIT 32KB FLASH 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 34
DigiKey Programmable: Not Verified
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D291S45TXPSA1 D291S45TXPSA1 Infineon Technologies Infineon-D291S-DS-v01_01-en_de.pdf?fileId=db3a304412b407950112b42fb7814d22 Description: DIODE STANDARD 4500V 445A
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 445A
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 4.15 V @ 1200 A
Current - Reverse Leakage @ Vr: 50 mA @ 4500 V
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CY7C63723-SC CY7C63723-SC Infineon Technologies CY7C63722%2C23%2C43.pdf Description: IC MCU 8K LS USB/PS-2 18-SOIC
Packaging: Tube
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: PS/2, USB
RAM Size: 256 x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.5V
Controller Series: CY7C637xx
Program Memory Type: OTP (8kB)
Applications: USB Microcontroller
Core Processor: M8B
Supplier Device Package: 18-SOIC
Number of I/O: 10
DigiKey Programmable: Not Verified
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CY7C63723-PXC CY7C63723-PXC Infineon Technologies CY7C63722%2C23%2C43.pdf Description: IC MCU 8K USB/PS2 LS 18DIP
Packaging: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Interface: PS/2, USB
RAM Size: 256 x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.5V
Controller Series: CY7C637xx
Program Memory Type: OTP (8kB)
Applications: USB Microcontroller
Core Processor: M8B
Supplier Device Package: 18-PDIP
Number of I/O: 10
DigiKey Programmable: Not Verified
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CYUSB4013FCAXITXUMA1 Infineon Technologies Description: USB-DATA
Packaging: Tape & Reel (TR)
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AUIRF9Z34N AUIRF9Z34N Infineon Technologies AUIRF9Z34N.pdf Description: MOSFET P-CH 55V 19A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Qualification: AEC-Q101
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AIMDQ75R027M1HXUMA1 AIMDQ75R027M1HXUMA1 Infineon Technologies Infineon-AIMDQ75R027M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018ef09e6c392acd Description: SICFET N-CH 750V PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tj)
Rds On (Max) @ Id, Vgs: 25mOhm @ 24.5A, 20V
Power Dissipation (Max): 273W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 8.8mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1668 pF @ 500 V
Qualification: AEC-Q101
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AIMDQ75R027M1HXUMA1 AIMDQ75R027M1HXUMA1 Infineon Technologies Infineon-AIMDQ75R027M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018ef09e6c392acd Description: SICFET N-CH 750V PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tj)
Rds On (Max) @ Id, Vgs: 25mOhm @ 24.5A, 20V
Power Dissipation (Max): 273W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 8.8mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1668 pF @ 500 V
Qualification: AEC-Q101
на замовлення 403 шт:
термін постачання 21-31 дні (днів)
1+1008.59 грн
10+680.86 грн
100+604.38 грн
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S29GL256S10DHI013 S29GL256S10DHI013 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
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CY8C4147AZAS585XQLA1 CY8C4147AZAS585XQLA1 Infineon Technologies Infineon-CY8C4149AZS-S575-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c8929aa4d018a21719a00247e Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, I2S, DMA, LCD, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
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CY8C4148AZAS585XQLA1 CY8C4148AZAS585XQLA1 Infineon Technologies Infineon-CY8C4149AZS-S575-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c8929aa4d018a21719a00247e Description: IC MCU 32BIT 256KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, I2S, DMA, LCD, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
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CY8C4149AZAS585XQLA1 CY8C4149AZAS585XQLA1 Infineon Technologies Infineon-CY8C4149AZS-S575-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c8929aa4d018a21719a00247e Description: IC MCU 32BIT 384KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, I2S, DMA, LCD, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
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IRSM515-055DA2 Infineon Technologies irsm505-055.pdf?fileId=5546d462533600a40153567bf5dc287d Description: IC HALF BRIDGE DRIVER 2.4A 23DIP
Features: Bootstrap Circuit
Packaging: Tube
Package / Case: 32-PowerDIP Module, 23 Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 1.3Ohm
Applications: AC Motors
Current - Output / Channel: 2.4A
Current - Peak Output: 15A
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 23-DIP
Fault Protection: UVLO
Load Type: Inductive
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CYPD822952LQXITAUMA1 Infineon Technologies Description: USB-C PC
Packaging: Tape & Reel (TR)
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CYPD822952LQXIAQLA1 Infineon Technologies Description: USB-C PC
Packaging: Tray
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EVAL2ED21814TOBO1 EVAL2ED21814TOBO1 Infineon Technologies UM_General%20purpose%20basic%202ED21814S06F_Final.pdf Description: EVAL2ED21814TOBO1
Packaging: Box
Contents: Board(s)
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+4253.93 грн
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IRFPW4468PBFXKSA1 IRFPW4468PBFXKSA1 Infineon Technologies Infineon-IRFPW4468PBF-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194d130dba01e47 Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 180A, 10V
Power Dissipation (Max): 3.8W (Ta), 517W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 540 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 29000 pF @ 50 V
на замовлення 228 шт:
термін постачання 21-31 дні (днів)
1+409.96 грн
30+222.19 грн
120+184.30 грн
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EVALFS33MR12W1M1HM5TOBO1 EVALFS33MR12W1M1HM5TOBO1 Infineon Technologies UG2024-01_EVAL-FS33MR12W1M1HM5_Revision1.0.pdf Description: EVALFS33MR12W1M1HM5TOBO1
Packaging: Box
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+185304.95 грн
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BTG70020A1ESWDBTOBO1 BTG70020A1ESWDBTOBO1 Infineon Technologies Description: BTG70020A-1ESW DB
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTG70020A-1ESW
Platform: Arduino
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+3821.68 грн
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SAF-XE164K-24F66L AC SAF-XE164K-24F66L AC Infineon Technologies XE164_V2.1_Aug2008.pdf Description: IC MCU 16BIT 192KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 192KB (192K x 8)
RAM Size: 24K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 11x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 75
DigiKey Programmable: Not Verified
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XE164F24F66LACFXQMA1 XE164F24F66LACFXQMA1 Infineon Technologies XE164_V2.1_Aug2008.pdf Description: IC MCU 16BIT 192KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 192KB (192K x 8)
RAM Size: 24K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 75
DigiKey Programmable: Not Verified
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XE164F48F66LACFXUMA1 XE164F48F66LACFXUMA1 Infineon Technologies XE164_V2.1_Aug2008.pdf Description: IC MCU 16BIT 384KB FLASH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 75
DigiKey Programmable: Not Verified
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XE164F24F66LACFXUMA1 XE164F24F66LACFXUMA1 Infineon Technologies XE164_V2.1_Aug2008.pdf Description: IC MCU 16BIT 192KB FLASH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 192KB (192K x 8)
RAM Size: 24K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 75
DigiKey Programmable: Not Verified
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XE164G24F66LACFXUMA1 XE164G24F66LACFXUMA1 Infineon Technologies XE164_V2.1_Aug2008.pdf Description: IC MCU 16BIT 192KB FLASH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 192KB (192K x 8)
RAM Size: 24K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 11x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 75
DigiKey Programmable: Not Verified
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XE164H72F66LACFXQMA1 XE164H72F66LACFXQMA1 Infineon Technologies XE164_V2.1_Aug2008.pdf Description: IC MCU 16BIT 576KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 75
DigiKey Programmable: Not Verified
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XC2268M72F66LAAFXUMA1 XC2268M72F66LAAFXUMA1 Infineon Technologies XC226xM.pdf Description: IC MCU 16BIT 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 4x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 76
DigiKey Programmable: Not Verified
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IRFH7440TRPBF IRFH7440TRPBF Infineon Technologies irfh7440pbf.pdf?fileId=5546d462533600a40153561f0e821eed Description: MOSFET N-CH 40V 85A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4574 pF @ 25 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
4000+32.67 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
IRFH7440TRPBF IRFH7440TRPBF Infineon Technologies irfh7440pbf.pdf?fileId=5546d462533600a40153561f0e821eed Description: MOSFET N-CH 40V 85A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4574 pF @ 25 V
на замовлення 7393 шт:
термін постачання 21-31 дні (днів)
3+127.79 грн
10+78.29 грн
100+52.54 грн
500+38.94 грн
1000+35.60 грн
2000+35.42 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRGS6B60KPBF IRGS6B60KPBF Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT NPT 600V 13A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
Supplier Device Package: D2PAK
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/215ns
Switching Energy: 110µJ (on), 135µJ (off)
Test Condition: 400V, 5A, 100Ohm, 15V
Gate Charge: 18.2 nC
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 26 A
Power - Max: 90 W
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AUIRF8739L2TR AUIRF8739L2TR Infineon Technologies auirf8739l2.pdf?fileId=5546d462533600a4015355b0e3241416 Description: MOSFET N-CH 40V 57A DIRECTFET
Packaging: Bulk
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 545A (Tc)
Rds On (Max) @ Id, Vgs: 0.6mOhm @ 195A, 10V
Power Dissipation (Max): 3.8W (Ta), 340W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 40V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 562 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17890 pF @ 25 V
Qualification: AEC-Q101
на замовлення 12443 шт:
термін постачання 21-31 дні (днів)
68+366.18 грн
Мінімальне замовлення: 68
В кошику  од. на суму  грн.
IRF7424TR IRF7424TR Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET P-CH 30V 11A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4030 pF @ 25 V
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CY8C4046LQI-T451 CY8C4046LQI-T451 Infineon Technologies Infineon-PSoC_4000T_MCU_datasheet-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c8a44f57b018a799f5fb53b5d Description: IC MCU 32BIT 64KB FLASH 16UFQFN
Packaging: Tray
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, Microwire, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, POR, PWM, WDT
Supplier Device Package: 16-QFN (3x3)
Number of I/O: 11
на замовлення 890 шт:
термін постачання 21-31 дні (днів)
2+279.59 грн
10+203.33 грн
25+186.75 грн
100+158.18 грн
490+145.27 грн
Мінімальне замовлення: 2
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EVALTDA3880718VOUTTOBO1 EVALTDA3880718VOUTTOBO1 Infineon Technologies Infineon-Evaluation_board_TDA38807_P1V8_user_guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190e3af200e5efd Description: EVAL BOARD FOR TDA38807
Packaging: Box
Voltage - Output: 1.8V
Voltage - Input: 12V
Current - Output: 6A
Contents: Board(s)
Regulator Topology: Buck
Utilized IC / Part: TDA38807
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+4353.42 грн
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TLE92783BQXV33XUMA1 Infineon Technologies Infineon-TLE9278-3BQX%20V33-DataSheet-v01_05-EN.pdf?fileId=5546d462689a790c0168c75d4d546425 Description: BODY SYSTEM ICS
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 3.3V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 4.5V ~ 28V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Converter, Automotive
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Qualification: AEC-Q100
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TLE92783BQXV33XUMA1 Infineon Technologies Infineon-TLE9278-3BQX%20V33-DataSheet-v01_05-EN.pdf?fileId=5546d462689a790c0168c75d4d546425 Description: BODY SYSTEM ICS
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 3.3V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 4.5V ~ 28V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Converter, Automotive
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2056 шт:
термін постачання 21-31 дні (днів)
1+735.00 грн
10+550.20 грн
25+510.79 грн
100+438.71 грн
250+419.33 грн
500+407.65 грн
1000+391.51 грн
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TLE92783BQXXUMA1 TLE92783BQXXUMA1 Infineon Technologies Infineon-TLE9278-3BQX-DataSheet-v01_05-EN.pdf?fileId=5546d462689a790c0168c738ae356420 Description: BODY SYSTEM ICS
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 4.5V ~ 28V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Converter, Automotive
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Qualification: AEC-Q100
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BFR35AP BFR35AP Infineon Technologies INFNS29989-1.pdf?t.download=true&u=5oefqw Description: BFR35 - LOW-NOISE SI TRANSISTORS
Packaging: Bulk
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AIMCQ120R120M1TXTMA1 AIMCQ120R120M1TXTMA1 Infineon Technologies Infineon-AIMCQ120R120M1T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01910fe652966b27 Description: SIC_DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 7A, 20V
Power Dissipation (Max): 161W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 2.2mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 800 V
Qualification: AEC-Q101
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AIMCQ120R120M1TXTMA1 AIMCQ120R120M1TXTMA1 Infineon Technologies Infineon-AIMCQ120R120M1T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01910fe652966b27 Description: SIC_DISCRETE
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 7A, 20V
Power Dissipation (Max): 161W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 2.2mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 800 V
Qualification: AEC-Q101
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AIMBG120R120M1XTMA1 AIMBG120R120M1XTMA1 Infineon Technologies Infineon-AIMBG120R120M1-DataSheet-v01_30-EN.pdf?fileId=8ac78c8c8fc2dd9c018fe1b113965b24 Description: SICFET N-CH 1200V 22A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 7A, 20V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 2.2mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 800 V
Qualification: AEC-Q101
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AIMZHN120R120M1TXKSA1 AIMZHN120R120M1TXKSA1 Infineon Technologies Infineon-AIMZHN120R120M1T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c68fc61634aa1 Description: SIC_DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 7A, 20V
Power Dissipation (Max): 133W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 2.2mA
Supplier Device Package: PG-TO247-4-14
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 800 V
Qualification: AEC-Q101
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ISC079N15NM6ATMA1 ISC079N15NM6ATMA1 Infineon Technologies Infineon-ISC079N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a01907753460f7058 Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.8A (Ta), 95A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 36A, 15V
Power Dissipation (Max): 3W (Ta), 165W (Tc)
Vgs(th) (Max) @ Id: 4V @ 77µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 75 V
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ISC079N15NM6ATMA1 ISC079N15NM6ATMA1 Infineon Technologies Infineon-ISC079N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a01907753460f7058 Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.8A (Ta), 95A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 36A, 15V
Power Dissipation (Max): 3W (Ta), 165W (Tc)
Vgs(th) (Max) @ Id: 4V @ 77µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 75 V
на замовлення 4622 шт:
термін постачання 21-31 дні (днів)
2+329.34 грн
10+223.90 грн
100+173.56 грн
500+137.26 грн
1000+127.36 грн
2000+126.26 грн
Мінімальне замовлення: 2
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IMW65R026M2HXKSA1 IMW65R026M2HXKSA1 Infineon Technologies IMW65R026M2HXKSA1.pdf Description: IMW65R026M2HXKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 34.5A, 20V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 7mA
Supplier Device Package: PG-TO247-3-40
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1499 pF @ 400 V
на замовлення 143 шт:
термін постачання 21-31 дні (днів)
1+881.66 грн
30+510.95 грн
120+436.91 грн
В кошику  од. на суму  грн.
CYW43438LKUBGT Infineon Technologies Description: WI-FI COMBO IOT
Packaging: Tape & Reel (TR)
Package / Case: 63-UFBGA, WLBGA
Sensitivity: -99dBm
Mounting Type: Surface Mount
Memory Size: 640kB ROM, 512kB SRAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 21dBm
Protocol: 802.11b/g/n, Bluetooth v4.0
Current - Receiving: 37mA ~ 41mA
Data Rate (Max): 54Mbps
Current - Transmitting: 260mA ~ 320mA
Supplier Device Package: 63-WLBGA (2.87x4.87)
GPIO: 5
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, SPI, UART
товару немає в наявності
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IGLD65R110D2AUMA1 Infineon Technologies Infineon-IGLD65R110D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a204bfd623f Description: HV GAN DISCRETES
Packaging: Tape & Reel (TR)
Package / Case: 8-LDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.3mA
Supplier Device Package: PG-LSON-8-2
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 400 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+131.96 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IGLD65R110D2AUMA1 Infineon Technologies Infineon-IGLD65R110D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a204bfd623f Description: HV GAN DISCRETES
Packaging: Cut Tape (CT)
Package / Case: 8-LDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.3mA
Supplier Device Package: PG-LSON-8-2
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 400 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1+365.36 грн
10+232.65 грн
100+165.45 грн
500+145.96 грн
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CY9BF404RAPMC-G-UNE2 CY9BF404RAPMC-G-UNE2 Infineon Technologies download Description: IC MCU 32BIT 256KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 100
DigiKey Programmable: Not Verified
на замовлення 840 шт:
термін постачання 21-31 дні (днів)
1+530.88 грн
10+396.34 грн
25+367.52 грн
84+323.68 грн
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S29GL128P90FAIR12 S29GL128P90FAIR12 Infineon Technologies 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
400+430.27 грн
Мінімальне замовлення: 400
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S29GL128P90FAIR12 S29GL128P90FAIR12 Infineon Technologies 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Cut Tape (CT)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
1+572.05 грн
10+488.84 грн
25+466.13 грн
50+421.97 грн
100+407.05 грн
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KITXMC7200MC1TOBO1 KITXMC7200MC1TOBO1 Infineon Technologies Infineon-KIT_XMC7200_MC1_product_brief-ProductBrief-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192e53ce9337b6a Description: KITXMC7200MC1TOBO1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: XMC7200
Primary Attributes: Isolated
Embedded: Yes, MCU
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+42737.41 грн
В кошику  од. на суму  грн.
KITXMC72EVK KITXMC72EVK Infineon Technologies Infineon-KIT_XMC72_EVK_XMC7200-evaluation-kit-quick-start-guide-GettingStarted-v01_00-EN.pdf?fileId=8ac78c8c8412f8d301842e60df937b6f Description: EVALUATION BOARD WHICH CARRIES A
Packaging: Bulk
Mounting Type: Fixed
Type: MCU
Contents: Board(s), Cable(s), Power Supply, Accessories
Core Processor: ARM® Cortex®-M0, Cortex®-M7
Utilized IC / Part: XMC7200
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XMC7241SCQ040XAAXUMA1 XMC7241SCQ040XAAXUMA1 Infineon Technologies Orderable_Part_Number_OPN_Translation_Table_Web.pdf Description: XMC1000
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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IMLT65R026M2HXTMA1 Infineon-IMLT65R026M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92416ca5019294a1439e2a4b
IMLT65R026M2HXTMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 34.5A, 20V
Power Dissipation (Max): 365W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 7mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1499 pF @ 400 V
на замовлення 1770 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+817.34 грн
10+545.25 грн
100+458.46 грн
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BTG7003A1EPWDBTOBO1
BTG7003A1EPWDBTOBO1
Виробник: Infineon Technologies
Description: BTG7003A-1EPW DB
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTG7003A-1EPW
Platform: Arduino
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4055.81 грн
В кошику  од. на суму  грн.
IGC019S06S1XTMA1 DS_IGC019S06S1_1_1.pdf
IGC019S06S1XTMA1
Виробник: Infineon Technologies
Description: MV GAN DISCRETES
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 35A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 12mA
Supplier Device Package: PG-TSON-6-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 30 V
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IGT65R025D2ATMA1 Infineon-IGT65R025D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a57bd2f0307
IGT65R025D2ATMA1
Виробник: Infineon Technologies
Description: IGT65R025D2ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Power Dissipation (Max): 236W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 6.1mA
Supplier Device Package: PG-HSOF-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 400 V
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IGT65R025D2ATMA1 Infineon-IGT65R025D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a57bd2f0307
IGT65R025D2ATMA1
Виробник: Infineon Technologies
Description: IGT65R025D2ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Power Dissipation (Max): 236W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 6.1mA
Supplier Device Package: PG-HSOF-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 400 V
на замовлення 176 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+883.38 грн
10+591.08 грн
100+505.75 грн
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IRFP048NPBF IRFP048NPbF.pdf
IRFP048NPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 64A TO247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 37A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
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CY7C1361KVE33-100AXE
CY7C1361KVE33-100AXE
Виробник: Infineon Technologies
Description: IC SRAM 9MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, Standard
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 256K x 36
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CY8C4025LQI-S413T Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1
CY8C4025LQI-S413T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 34
DigiKey Programmable: Not Verified
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D291S45TXPSA1 Infineon-D291S-DS-v01_01-en_de.pdf?fileId=db3a304412b407950112b42fb7814d22
D291S45TXPSA1
Виробник: Infineon Technologies
Description: DIODE STANDARD 4500V 445A
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 445A
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 4.15 V @ 1200 A
Current - Reverse Leakage @ Vr: 50 mA @ 4500 V
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CY7C63723-SC CY7C63722%2C23%2C43.pdf
CY7C63723-SC
Виробник: Infineon Technologies
Description: IC MCU 8K LS USB/PS-2 18-SOIC
Packaging: Tube
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: PS/2, USB
RAM Size: 256 x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.5V
Controller Series: CY7C637xx
Program Memory Type: OTP (8kB)
Applications: USB Microcontroller
Core Processor: M8B
Supplier Device Package: 18-SOIC
Number of I/O: 10
DigiKey Programmable: Not Verified
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CY7C63723-PXC CY7C63722%2C23%2C43.pdf
CY7C63723-PXC
Виробник: Infineon Technologies
Description: IC MCU 8K USB/PS2 LS 18DIP
Packaging: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Interface: PS/2, USB
RAM Size: 256 x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.5V
Controller Series: CY7C637xx
Program Memory Type: OTP (8kB)
Applications: USB Microcontroller
Core Processor: M8B
Supplier Device Package: 18-PDIP
Number of I/O: 10
DigiKey Programmable: Not Verified
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CYUSB4013FCAXITXUMA1
Виробник: Infineon Technologies
Description: USB-DATA
Packaging: Tape & Reel (TR)
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AUIRF9Z34N AUIRF9Z34N.pdf
AUIRF9Z34N
Виробник: Infineon Technologies
Description: MOSFET P-CH 55V 19A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Qualification: AEC-Q101
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AIMDQ75R027M1HXUMA1 Infineon-AIMDQ75R027M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018ef09e6c392acd
AIMDQ75R027M1HXUMA1
Виробник: Infineon Technologies
Description: SICFET N-CH 750V PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tj)
Rds On (Max) @ Id, Vgs: 25mOhm @ 24.5A, 20V
Power Dissipation (Max): 273W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 8.8mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1668 pF @ 500 V
Qualification: AEC-Q101
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AIMDQ75R027M1HXUMA1 Infineon-AIMDQ75R027M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018ef09e6c392acd
AIMDQ75R027M1HXUMA1
Виробник: Infineon Technologies
Description: SICFET N-CH 750V PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tj)
Rds On (Max) @ Id, Vgs: 25mOhm @ 24.5A, 20V
Power Dissipation (Max): 273W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 8.8mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1668 pF @ 500 V
Qualification: AEC-Q101
на замовлення 403 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1008.59 грн
10+680.86 грн
100+604.38 грн
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S29GL256S10DHI013 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL256S10DHI013
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
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CY8C4147AZAS585XQLA1 Infineon-CY8C4149AZS-S575-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c8929aa4d018a21719a00247e
CY8C4147AZAS585XQLA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, I2S, DMA, LCD, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
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CY8C4148AZAS585XQLA1 Infineon-CY8C4149AZS-S575-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c8929aa4d018a21719a00247e
CY8C4148AZAS585XQLA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, I2S, DMA, LCD, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
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CY8C4149AZAS585XQLA1 Infineon-CY8C4149AZS-S575-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c8929aa4d018a21719a00247e
CY8C4149AZAS585XQLA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 384KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, I2S, DMA, LCD, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
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IRSM515-055DA2 irsm505-055.pdf?fileId=5546d462533600a40153567bf5dc287d
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 2.4A 23DIP
Features: Bootstrap Circuit
Packaging: Tube
Package / Case: 32-PowerDIP Module, 23 Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 1.3Ohm
Applications: AC Motors
Current - Output / Channel: 2.4A
Current - Peak Output: 15A
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 23-DIP
Fault Protection: UVLO
Load Type: Inductive
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CYPD822952LQXITAUMA1
Виробник: Infineon Technologies
Description: USB-C PC
Packaging: Tape & Reel (TR)
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CYPD822952LQXIAQLA1
Виробник: Infineon Technologies
Description: USB-C PC
Packaging: Tray
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EVAL2ED21814TOBO1 UM_General%20purpose%20basic%202ED21814S06F_Final.pdf
EVAL2ED21814TOBO1
Виробник: Infineon Technologies
Description: EVAL2ED21814TOBO1
Packaging: Box
Contents: Board(s)
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4253.93 грн
В кошику  од. на суму  грн.
IRFPW4468PBFXKSA1 Infineon-IRFPW4468PBF-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194d130dba01e47
IRFPW4468PBFXKSA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 180A, 10V
Power Dissipation (Max): 3.8W (Ta), 517W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 540 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 29000 pF @ 50 V
на замовлення 228 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+409.96 грн
30+222.19 грн
120+184.30 грн
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EVALFS33MR12W1M1HM5TOBO1 UG2024-01_EVAL-FS33MR12W1M1HM5_Revision1.0.pdf
EVALFS33MR12W1M1HM5TOBO1
Виробник: Infineon Technologies
Description: EVALFS33MR12W1M1HM5TOBO1
Packaging: Box
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+185304.95 грн
В кошику  од. на суму  грн.
BTG70020A1ESWDBTOBO1
BTG70020A1ESWDBTOBO1
Виробник: Infineon Technologies
Description: BTG70020A-1ESW DB
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTG70020A-1ESW
Platform: Arduino
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3821.68 грн
В кошику  од. на суму  грн.
SAF-XE164K-24F66L AC XE164_V2.1_Aug2008.pdf
SAF-XE164K-24F66L AC
Виробник: Infineon Technologies
Description: IC MCU 16BIT 192KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 192KB (192K x 8)
RAM Size: 24K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 11x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 75
DigiKey Programmable: Not Verified
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XE164F24F66LACFXQMA1 XE164_V2.1_Aug2008.pdf
XE164F24F66LACFXQMA1
Виробник: Infineon Technologies
Description: IC MCU 16BIT 192KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 192KB (192K x 8)
RAM Size: 24K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 75
DigiKey Programmable: Not Verified
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XE164F48F66LACFXUMA1 XE164_V2.1_Aug2008.pdf
XE164F48F66LACFXUMA1
Виробник: Infineon Technologies
Description: IC MCU 16BIT 384KB FLASH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 75
DigiKey Programmable: Not Verified
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XE164F24F66LACFXUMA1 XE164_V2.1_Aug2008.pdf
XE164F24F66LACFXUMA1
Виробник: Infineon Technologies
Description: IC MCU 16BIT 192KB FLASH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 192KB (192K x 8)
RAM Size: 24K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 75
DigiKey Programmable: Not Verified
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XE164G24F66LACFXUMA1 XE164_V2.1_Aug2008.pdf
XE164G24F66LACFXUMA1
Виробник: Infineon Technologies
Description: IC MCU 16BIT 192KB FLASH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 192KB (192K x 8)
RAM Size: 24K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 11x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 75
DigiKey Programmable: Not Verified
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XE164H72F66LACFXQMA1 XE164_V2.1_Aug2008.pdf
XE164H72F66LACFXQMA1
Виробник: Infineon Technologies
Description: IC MCU 16BIT 576KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 75
DigiKey Programmable: Not Verified
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XC2268M72F66LAAFXUMA1 XC226xM.pdf
XC2268M72F66LAAFXUMA1
Виробник: Infineon Technologies
Description: IC MCU 16BIT 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 4x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 76
DigiKey Programmable: Not Verified
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IRFH7440TRPBF irfh7440pbf.pdf?fileId=5546d462533600a40153561f0e821eed
IRFH7440TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 85A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4574 pF @ 25 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4000+32.67 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
IRFH7440TRPBF irfh7440pbf.pdf?fileId=5546d462533600a40153561f0e821eed
IRFH7440TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 85A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4574 pF @ 25 V
на замовлення 7393 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+127.79 грн
10+78.29 грн
100+52.54 грн
500+38.94 грн
1000+35.60 грн
2000+35.42 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRGS6B60KPBF fundamentals-of-power-semiconductors
IRGS6B60KPBF
Виробник: Infineon Technologies
Description: IGBT NPT 600V 13A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
Supplier Device Package: D2PAK
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/215ns
Switching Energy: 110µJ (on), 135µJ (off)
Test Condition: 400V, 5A, 100Ohm, 15V
Gate Charge: 18.2 nC
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 26 A
Power - Max: 90 W
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AUIRF8739L2TR auirf8739l2.pdf?fileId=5546d462533600a4015355b0e3241416
AUIRF8739L2TR
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 57A DIRECTFET
Packaging: Bulk
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 545A (Tc)
Rds On (Max) @ Id, Vgs: 0.6mOhm @ 195A, 10V
Power Dissipation (Max): 3.8W (Ta), 340W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 40V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 562 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17890 pF @ 25 V
Qualification: AEC-Q101
на замовлення 12443 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
68+366.18 грн
Мінімальне замовлення: 68
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IRF7424TR IR_PartNumberingSystem.pdf
IRF7424TR
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 11A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4030 pF @ 25 V
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CY8C4046LQI-T451 Infineon-PSoC_4000T_MCU_datasheet-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c8a44f57b018a799f5fb53b5d
CY8C4046LQI-T451
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 16UFQFN
Packaging: Tray
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, Microwire, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, POR, PWM, WDT
Supplier Device Package: 16-QFN (3x3)
Number of I/O: 11
на замовлення 890 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+279.59 грн
10+203.33 грн
25+186.75 грн
100+158.18 грн
490+145.27 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
EVALTDA3880718VOUTTOBO1 Infineon-Evaluation_board_TDA38807_P1V8_user_guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190e3af200e5efd
EVALTDA3880718VOUTTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR TDA38807
Packaging: Box
Voltage - Output: 1.8V
Voltage - Input: 12V
Current - Output: 6A
Contents: Board(s)
Regulator Topology: Buck
Utilized IC / Part: TDA38807
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4353.42 грн
В кошику  од. на суму  грн.
TLE92783BQXV33XUMA1 Infineon-TLE9278-3BQX%20V33-DataSheet-v01_05-EN.pdf?fileId=5546d462689a790c0168c75d4d546425
Виробник: Infineon Technologies
Description: BODY SYSTEM ICS
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 3.3V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 4.5V ~ 28V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Converter, Automotive
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Qualification: AEC-Q100
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TLE92783BQXV33XUMA1 Infineon-TLE9278-3BQX%20V33-DataSheet-v01_05-EN.pdf?fileId=5546d462689a790c0168c75d4d546425
Виробник: Infineon Technologies
Description: BODY SYSTEM ICS
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 3.3V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 4.5V ~ 28V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Converter, Automotive
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2056 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+735.00 грн
10+550.20 грн
25+510.79 грн
100+438.71 грн
250+419.33 грн
500+407.65 грн
1000+391.51 грн
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TLE92783BQXXUMA1 Infineon-TLE9278-3BQX-DataSheet-v01_05-EN.pdf?fileId=5546d462689a790c0168c738ae356420
TLE92783BQXXUMA1
Виробник: Infineon Technologies
Description: BODY SYSTEM ICS
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 4.5V ~ 28V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Converter, Automotive
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Qualification: AEC-Q100
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BFR35AP INFNS29989-1.pdf?t.download=true&u=5oefqw
BFR35AP
Виробник: Infineon Technologies
Description: BFR35 - LOW-NOISE SI TRANSISTORS
Packaging: Bulk
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AIMCQ120R120M1TXTMA1 Infineon-AIMCQ120R120M1T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01910fe652966b27
AIMCQ120R120M1TXTMA1
Виробник: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 7A, 20V
Power Dissipation (Max): 161W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 2.2mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 800 V
Qualification: AEC-Q101
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AIMCQ120R120M1TXTMA1 Infineon-AIMCQ120R120M1T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01910fe652966b27
AIMCQ120R120M1TXTMA1
Виробник: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 7A, 20V
Power Dissipation (Max): 161W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 2.2mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 800 V
Qualification: AEC-Q101
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AIMBG120R120M1XTMA1 Infineon-AIMBG120R120M1-DataSheet-v01_30-EN.pdf?fileId=8ac78c8c8fc2dd9c018fe1b113965b24
AIMBG120R120M1XTMA1
Виробник: Infineon Technologies
Description: SICFET N-CH 1200V 22A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 7A, 20V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 2.2mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 800 V
Qualification: AEC-Q101
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AIMZHN120R120M1TXKSA1 Infineon-AIMZHN120R120M1T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c68fc61634aa1
AIMZHN120R120M1TXKSA1
Виробник: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 7A, 20V
Power Dissipation (Max): 133W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 2.2mA
Supplier Device Package: PG-TO247-4-14
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 800 V
Qualification: AEC-Q101
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ISC079N15NM6ATMA1 Infineon-ISC079N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a01907753460f7058
ISC079N15NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.8A (Ta), 95A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 36A, 15V
Power Dissipation (Max): 3W (Ta), 165W (Tc)
Vgs(th) (Max) @ Id: 4V @ 77µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 75 V
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ISC079N15NM6ATMA1 Infineon-ISC079N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a01907753460f7058
ISC079N15NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.8A (Ta), 95A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 36A, 15V
Power Dissipation (Max): 3W (Ta), 165W (Tc)
Vgs(th) (Max) @ Id: 4V @ 77µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 75 V
на замовлення 4622 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+329.34 грн
10+223.90 грн
100+173.56 грн
500+137.26 грн
1000+127.36 грн
2000+126.26 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IMW65R026M2HXKSA1 IMW65R026M2HXKSA1.pdf
IMW65R026M2HXKSA1
Виробник: Infineon Technologies
Description: IMW65R026M2HXKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 34.5A, 20V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 7mA
Supplier Device Package: PG-TO247-3-40
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1499 pF @ 400 V
на замовлення 143 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+881.66 грн
30+510.95 грн
120+436.91 грн
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CYW43438LKUBGT
Виробник: Infineon Technologies
Description: WI-FI COMBO IOT
Packaging: Tape & Reel (TR)
Package / Case: 63-UFBGA, WLBGA
Sensitivity: -99dBm
Mounting Type: Surface Mount
Memory Size: 640kB ROM, 512kB SRAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 21dBm
Protocol: 802.11b/g/n, Bluetooth v4.0
Current - Receiving: 37mA ~ 41mA
Data Rate (Max): 54Mbps
Current - Transmitting: 260mA ~ 320mA
Supplier Device Package: 63-WLBGA (2.87x4.87)
GPIO: 5
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, SPI, UART
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IGLD65R110D2AUMA1 Infineon-IGLD65R110D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a204bfd623f
Виробник: Infineon Technologies
Description: HV GAN DISCRETES
Packaging: Tape & Reel (TR)
Package / Case: 8-LDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.3mA
Supplier Device Package: PG-LSON-8-2
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 400 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+131.96 грн
Мінімальне замовлення: 3000
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IGLD65R110D2AUMA1 Infineon-IGLD65R110D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a204bfd623f
Виробник: Infineon Technologies
Description: HV GAN DISCRETES
Packaging: Cut Tape (CT)
Package / Case: 8-LDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.3mA
Supplier Device Package: PG-LSON-8-2
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 400 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+365.36 грн
10+232.65 грн
100+165.45 грн
500+145.96 грн
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CY9BF404RAPMC-G-UNE2 download
CY9BF404RAPMC-G-UNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 100
DigiKey Programmable: Not Verified
на замовлення 840 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+530.88 грн
10+396.34 грн
25+367.52 грн
84+323.68 грн
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S29GL128P90FAIR12 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref
S29GL128P90FAIR12
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
400+430.27 грн
Мінімальне замовлення: 400
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S29GL128P90FAIR12 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref
S29GL128P90FAIR12
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Cut Tape (CT)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+572.05 грн
10+488.84 грн
25+466.13 грн
50+421.97 грн
100+407.05 грн
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KITXMC7200MC1TOBO1 Infineon-KIT_XMC7200_MC1_product_brief-ProductBrief-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192e53ce9337b6a
KITXMC7200MC1TOBO1
Виробник: Infineon Technologies
Description: KITXMC7200MC1TOBO1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: XMC7200
Primary Attributes: Isolated
Embedded: Yes, MCU
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+42737.41 грн
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KITXMC72EVK Infineon-KIT_XMC72_EVK_XMC7200-evaluation-kit-quick-start-guide-GettingStarted-v01_00-EN.pdf?fileId=8ac78c8c8412f8d301842e60df937b6f
KITXMC72EVK
Виробник: Infineon Technologies
Description: EVALUATION BOARD WHICH CARRIES A
Packaging: Bulk
Mounting Type: Fixed
Type: MCU
Contents: Board(s), Cable(s), Power Supply, Accessories
Core Processor: ARM® Cortex®-M0, Cortex®-M7
Utilized IC / Part: XMC7200
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XMC7241SCQ040XAAXUMA1 Orderable_Part_Number_OPN_Translation_Table_Web.pdf
XMC7241SCQ040XAAXUMA1
Виробник: Infineon Technologies
Description: XMC1000
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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