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OPTIGATRUSTADAPTERTOBO1 OPTIGATRUSTADAPTERTOBO1 Infineon Technologies Infineon-OPTIGA_Trust_Adapter_UserGuide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c901008d1019038911a2d3567 Description: EVAL BOARD
Packaging: Box
Function: Adapter Board
Type: Interface
Contents: Board(s)
Utilized IC / Part: OPTIGA Trust
Platform: Arduino
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
1+3740.88 грн
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CY8C4149AZSS558XQLA1 CY8C4149AZSS558XQLA1 Infineon Technologies Infineon-CY8C4149AZS-S575-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c8929aa4d018a21719a00247e Description: IC MCU 32BIT 384KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Grade: Automotive
Number of I/O: 84
Qualification: AEC-Q100
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IRGP6640D-EPBF IRGP6640D-EPBF Infineon Technologies IRGP6640DPbF%2C-EPbF.pdf Description: IGBT 600V 53A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 40ns/100ns
Switching Energy: 90µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 53 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 200 W
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IRGP6630DPBF IRGP6630DPBF Infineon Technologies IRGP6630DPbF%2C-EPbF.pdf Description: IGBT 600V 47A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 18A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 40ns/95ns
Switching Energy: 75µJ (on), 350µJ (off)
Test Condition: 400V, 18A, 22Ohm, 15V
Gate Charge: 30 nC
Current - Collector (Ic) (Max): 47 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 54 A
Power - Max: 192 W
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IRGP6640DPBF IRGP6640DPBF Infineon Technologies IRGP6640DPbF%2C-EPbF.pdf Description: IGBT 600V 53A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 40ns/100ns
Switching Energy: 300µJ (on), 840µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 53 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 200 W
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IRGP6650DPBF IRGP6650DPBF Infineon Technologies IRGP6650DPbF%2C-EPbF.pdf Description: IGBT 600V 80A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 35A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 40ns/105ns
Switching Energy: 300µJ (on), 630µJ (off)
Test Condition: 400V, 35A, 10Ohm, 15V
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 306 W
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CY8C21334-24PVXAT CY8C21334-24PVXAT Infineon Technologies download Description: IC MCU 8BIT 8KB FLASH 20SSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 28x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 20-SSOP
Number of I/O: 16
DigiKey Programmable: Verified
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CY7C68003-20FNXI CY7C68003-20FNXI Infineon Technologies CY7C68003.pdf Description: IC TRANSCEIVER FULL 1/1 20WLCSP
Packaging: Tray
Package / Case: 20-UFBGA, WLCSP
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.3V
Number of Drivers/Receivers: 1/1
Protocol: USB 2.0
Supplier Device Package: 20-WLCSP (2.14x1.76)
Duplex: Full
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IAUCN04S7N024DATMA1 IAUCN04S7N024DATMA1 Infineon Technologies Infineon-IAUCN04S7N024D-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca501927583bfe71044 Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 72W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2067pF @ 20V
Rds On (Max) @ Id, Vgs: 2.49mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 25µA
Supplier Device Package: PG-TDSON-8-60
Grade: Automotive
Qualification: AEC-Q101
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IAUCN04S7N024DATMA1 IAUCN04S7N024DATMA1 Infineon Technologies Infineon-IAUCN04S7N024D-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca501927583bfe71044 Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 72W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2067pF @ 20V
Rds On (Max) @ Id, Vgs: 2.49mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 25µA
Supplier Device Package: PG-TDSON-8-60
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1880 шт:
термін постачання 21-31 дні (днів)
3+159.36 грн
10+98.71 грн
100+68.50 грн
500+52.16 грн
1000+46.95 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CYPAP111A3-10SXQ CYPAP111A3-10SXQ Infineon Technologies Infineon-PAG1P_Datasheet_Primary_Side_Startup_Controller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9bdef7294 Description: PRIMARY SIDE STARTUP CONTROLLER
Packaging: Tube
Package / Case: 10-SOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 70%
Frequency - Switching: 30kHz
Internal Switch(s): No
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Flyback, Secondary Side SR
Voltage - Supply (Vcc/Vdd): 85V ~ 265V
Supplier Device Package: 10-SOIC
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit, UVLO
Control Features: Frequency Control, Soft Start
на замовлення 4850 шт:
термін постачання 21-31 дні (днів)
4+86.32 грн
10+60.19 грн
97+48.24 грн
194+43.05 грн
291+41.95 грн
582+40.32 грн
1067+38.49 грн
2522+37.15 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRS2108SPBF IRS2108SPBF Infineon Technologies IRSDS08085-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
на замовлення 2702 шт:
термін постачання 21-31 дні (днів)
3+141.10 грн
10+100.15 грн
95+81.74 грн
190+73.23 грн
285+71.49 грн
570+68.93 грн
1045+65.97 грн
2565+63.78 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CY37064P44-125AC CY37064P44-125AC Infineon Technologies Ultra%20370000%20CPLD%20Family.pdf Description: IC CPLD 64MC 10NS 44TQFP
Packaging: Bag
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Programmable Type: In-System Reprogrammable™ (ISR™) CMOS
Number of Macrocells: 64
Operating Temperature: 0°C ~ 70°C (TA)
Delay Time tpd(1) Max: 10 ns
Supplier Device Package: 44-TQFP (10x10)
Voltage Supply - Internal: 4.75V ~ 5.25V
Number of I/O: 37
DigiKey Programmable: Not Verified
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CY37064P44-125JXC CY37064P44-125JXC Infineon Technologies Ultra%20370000%20CPLD%20Family.pdf Description: IC CPLD 64MC 10NS 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Programmable Type: In-System Reprogrammable™ (ISR™) CMOS
Number of Macrocells: 64
Operating Temperature: 0°C ~ 70°C (TA)
Delay Time tpd(1) Max: 10 ns
Supplier Device Package: 44-PLCC (16.61x16.61)
Voltage Supply - Internal: 4.75V ~ 5.25V
Number of I/O: 37
DigiKey Programmable: Verified
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CY37064P44-125AXC CY37064P44-125AXC Infineon Technologies Ultra%20370000%20CPLD%20Family.pdf Description: IC CPLD 64MC 10NS 44TQFP
Packaging: Tray
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Programmable Type: In-System Reprogrammable™ (ISR™) CMOS
Number of Macrocells: 64
Operating Temperature: 0°C ~ 70°C (TA)
Delay Time tpd(1) Max: 10 ns
Supplier Device Package: 44-TQFP (10x10)
Voltage Supply - Internal: 4.75V ~ 5.25V
Number of I/O: 37
DigiKey Programmable: Verified
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CY37064P84-125JC CY37064P84-125JC Infineon Technologies Ultra%20370000%20CPLD%20Family.pdf Description: IC CPLD 64MC 10NS 84PLCC
Packaging: Tube
Package / Case: 84-LCC (J-Lead)
Mounting Type: Surface Mount
Programmable Type: In-System Reprogrammable™ (ISR™) CMOS
Number of Macrocells: 64
Operating Temperature: 0°C ~ 70°C (TA)
Delay Time tpd(1) Max: 10 ns
Supplier Device Package: 84-PLCC (29.31x29.31)
Voltage Supply - Internal: 4.75V ~ 5.25V
Number of I/O: 69
DigiKey Programmable: Not Verified
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AIMCQ120R160M1TXTMA1 AIMCQ120R160M1TXTMA1 Infineon Technologies Infineon-AIMCQ120R160M1T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01910fe657236b2a Description: SIC_DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 5A, 20V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 1.5mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 800 V
Qualification: AEC-Q101
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AIMCQ120R160M1TXTMA1 AIMCQ120R160M1TXTMA1 Infineon Technologies Infineon-AIMCQ120R160M1T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01910fe657236b2a Description: SIC_DISCRETE
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 5A, 20V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 1.5mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 800 V
Qualification: AEC-Q101
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
1+578.52 грн
10+379.10 грн
100+293.10 грн
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IM12B20EC1XKMA1 IM12B20EC1XKMA1 Infineon Technologies Infineon-IM12B20EC1-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c90530b3a01908868d7af232a Description: IM12B20EC1XKMA1
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.094", 27.80mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2500Vrms
Current: 30 A
Voltage: 1.2 kV
на замовлення 245 шт:
термін постачання 21-31 дні (днів)
1+2984.73 грн
14+2295.91 грн
28+2202.74 грн
112+1935.93 грн
В кошику  од. на суму  грн.
IAUMN10S5N016GATMA1 Infineon Technologies Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
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IR2131JTRPBF IR2131JTRPBF Infineon Technologies ir2131.pdf?fileId=5546d462533600a4015355c882d7169d Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tape & Reel (TR)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
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IR2131JTRPBF IR2131JTRPBF Infineon Technologies ir2131.pdf?fileId=5546d462533600a4015355c882d7169d Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Cut Tape (CT)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
на замовлення 483 шт:
термін постачання 21-31 дні (днів)
1+632.47 грн
10+473.25 грн
25+439.28 грн
100+377.24 грн
250+360.55 грн
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IM64D130AXTMA1 IM64D130AXTMA1 Infineon Technologies Infineon-IM64D130A-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8eeb092c018f0b8b10921198 Description: XENSIV - IM64D130A Automotive ME
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -36dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 64dB
Termination: Solder Pads
Direction: Omnidirectional
Ratings: IP57 - Dust Protected, Waterproof
Port Location: Bottom
Height (Max): 0.043" (1.08mm)
Grade: Automotive
Voltage - Rated: 1.8 V
Current - Supply: 1.4 A
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 10 Hz ~ 10 kHz
Qualification: AEC-Q103
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IM64D130AXTMA1 IM64D130AXTMA1 Infineon Technologies Infineon-IM64D130A-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8eeb092c018f0b8b10921198 Description: XENSIV - IM64D130A Automotive ME
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -36dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 64dB
Termination: Solder Pads
Direction: Omnidirectional
Ratings: IP57 - Dust Protected, Waterproof
Port Location: Bottom
Height (Max): 0.043" (1.08mm)
Grade: Automotive
Voltage - Rated: 1.8 V
Current - Supply: 1.4 A
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 10 Hz ~ 10 kHz
Qualification: AEC-Q103
на замовлення 4958 шт:
термін постачання 21-31 дні (днів)
4+103.75 грн
10+81.53 грн
25+75.13 грн
50+66.28 грн
100+62.32 грн
250+58.96 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
CY8C4125PVS-482ZT CY8C4125PVS-482ZT Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4100_Family_Programmable_System-on-Chip_(PSoC_)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed973a95b0d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integrati Description: IC MCU 32BIT 32KB FLASH 28SSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Grade: Automotive
Number of I/O: 24
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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CG8968AMT Infineon Technologies Description: CG8968AMT
Packaging: Bulk
DigiKey Programmable: Not Verified
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CY7C2270KV18-550BZXC CY7C2270KV18-550BZXC Infineon Technologies Infineon-CY7C2268KV18_CY7C2270KV18_36-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec197363665 Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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CY7C1565KV18-550BZXC CY7C1565KV18-550BZXC Infineon Technologies Infineon-CY7C1565KV18_72-Mbit_QDR(R)_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe0b293135&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
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CY14B256KA-SP25XIT CY14B256KA-SP25XIT Infineon Technologies Infineon-CY14B256KA_256-Kbit_(32_K_8)_nvSRAM_with_Real_Time_Clock-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd912f303f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC NVSRAM 256KBIT PAR 48SSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-SSOP
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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S25FL128LAGNFB013 S25FL128LAGNFB013 Infineon Technologies Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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IRFP4868PBF IRFP4868PBF Infineon Technologies IRSDS19316-1.pdf?t.download=true&u=5oefqw Description: IRFP4868 - 12V-300V N-CHANNEL PO
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 42A, 10V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10774 pF @ 50 V
на замовлення 133 шт:
термін постачання 21-31 дні (днів)
133+218.20 грн
Мінімальне замовлення: 133
В кошику  од. на суму  грн.
T1040N20TOFVTXPSA1 Infineon Technologies T1040N.pdf Description: SCR MODULE 2.2KV 2200A TO-200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 21500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1040 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 2200 A
Voltage - Off State: 2.2 kV
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D2450N07TXPSA1 D2450N07TXPSA1 Infineon Technologies Infineon-D2450N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd8012863a4b431538d Description: DIODE STANDARD 700V 2450A
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2450A
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 2000 A
Current - Reverse Leakage @ Vr: 50 mA @ 700 V
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6EDL04N065PRXUMA1 6EDL04N065PRXUMA1 Infineon Technologies 6EDL04xR%20Family%20final%20datasheet%20Rev2_0.pdf Description: 6EDL04N065PRXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 25-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 25V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-TSSOP-25
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+116.37 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
6EDL04N065PRXUMA1 6EDL04N065PRXUMA1 Infineon Technologies 6EDL04xR%20Family%20final%20datasheet%20Rev2_0.pdf Description: 6EDL04N065PRXUMA1
Packaging: Cut Tape (CT)
Package / Case: 25-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 25V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-TSSOP-25
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
2+186.75 грн
5+160.17 грн
10+152.90 грн
25+135.38 грн
50+129.80 грн
100+124.69 грн
500+112.54 грн
1000+108.77 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
1EDI3035ASXUMA1 1EDI3035ASXUMA1 Infineon Technologies Infineon-1EDI3035AS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a019088695ff7250c Description: 1EDI3035ASXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Magnetic Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 5700Vrms
Approval Agency: IEC/EN/DIN, UL, VDE
Supplier Device Package: PG-DSO-20-91
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 3V ~ 5.5V, 13.5V ~ 20V
Qualification: AEC-Q100
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
1000+159.70 грн
2000+150.20 грн
3000+148.40 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
1EDI3035ASXUMA1 1EDI3035ASXUMA1 Infineon Technologies Infineon-1EDI3035AS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a019088695ff7250c Description: 1EDI3035ASXUMA1
Packaging: Cut Tape (CT)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Magnetic Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 5700Vrms
Approval Agency: IEC/EN/DIN, UL, VDE
Supplier Device Package: PG-DSO-20-91
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 3V ~ 5.5V, 13.5V ~ 20V
Qualification: AEC-Q100
на замовлення 4860 шт:
термін постачання 21-31 дні (днів)
2+284.69 грн
10+207.41 грн
25+190.64 грн
100+161.62 грн
250+153.38 грн
500+148.41 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IDDD06G65C6XTMA1 Infineon Technologies Infineon-IDDD06G65C6-DS-v02_00-EN.pdf?fileId=5546d462625a528f01628f86ff8c0e09 Description: DIODE SIC 650V 18A PGHDSOP101
Packaging: Bulk
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 302pF @ 1V, 1MHz
Current - Average Rectified (Io): 18A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 20 µA @ 420 V
на замовлення 543 шт:
термін постачання 21-31 дні (днів)
233+102.08 грн
Мінімальне замовлення: 233
В кошику  од. на суму  грн.
IDDD12G65C6XTMA1 IDDD12G65C6XTMA1 Infineon Technologies Infineon-Selection_guide_CoolSiC_Silicon_Carbide_Schottky_diodes-SG-v05_00-EN.pdf?fileId=db3a3043399628450139b0701a1d21d2 Description: DIODE SIC 650V 34A PGHDSOP101
Packaging: Bulk
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 594pF @ 1V, 1MHz
Current - Average Rectified (Io): 34A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 40 µA @ 420 V
на замовлення 5200 шт:
термін постачання 21-31 дні (днів)
121+197.83 грн
Мінімальне замовлення: 121
В кошику  од. на суму  грн.
AUIRF1010Z AUIRF1010Z Infineon Technologies auirf1010z.pdf?fileId=5546d462533600a4015355a89a4a1364 Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 75A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
Qualification: AEC-Q101
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BC847CE6433HTMA1 BC847CE6433HTMA1 Infineon Technologies bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf Description: TRANS NPN 45V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
7717+2.87 грн
Мінімальне замовлення: 7717
В кошику  од. на суму  грн.
SIDC56D60E6X1SA1 Infineon Technologies SIDC56D60E6_L4223M.pdf?folderId=db3a304412b407950112b436e1b366f6&fileId=db3a304412b407950112b436e23366f7 Description: DIODE STD 600V 150A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 150A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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IQFH47N04NM6ATMA1 IQFH47N04NM6ATMA1 Infineon Technologies Infineon-IQFH47N04NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101904de8dede050b Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 507A (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Supplier Device Package: PG-TSON-12-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 221 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13300 pF @ 20 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+166.20 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IQFH47N04NM6ATMA1 IQFH47N04NM6ATMA1 Infineon Technologies Infineon-IQFH47N04NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101904de8dede050b Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 507A (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Supplier Device Package: PG-TSON-12-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 221 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13300 pF @ 20 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1+425.80 грн
10+273.35 грн
100+195.97 грн
500+152.95 грн
1000+150.20 грн
В кошику  од. на суму  грн.
IGB110S10S1XTMA1 Infineon Technologies Description: MV GAN DISCRETES
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 5V
Power Dissipation (Max): 2.5W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 3mA
Supplier Device Package: PG-TSON-4-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 50 V
товару немає в наявності
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AUIRLS3034 AUIRLS3034 Infineon Technologies AUIRLS3034.pdf Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 195A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 10315 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
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ISC800P06LMATMA1 ISC800P06LMATMA1 Infineon Technologies Infineon-ISC800P06LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185a9e4c89536f2 Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19.6A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 16A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 724µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 30 V
товару немає в наявності
В кошику  од. на суму  грн.
ISC800P06LMATMA1 ISC800P06LMATMA1 Infineon Technologies Infineon-ISC800P06LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185a9e4c89536f2 Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19.6A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 16A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 724µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 30 V
на замовлення 4594 шт:
термін постачання 21-31 дні (днів)
3+124.50 грн
10+76.33 грн
100+51.19 грн
500+37.92 грн
1000+34.66 грн
2000+34.41 грн
Мінімальне замовлення: 3
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SAF-XE164H-96F66L AC SAF-XE164H-96F66L AC Infineon Technologies XE164_V2.1_Aug2008.pdf Description: IC MCU 16BIT 768KB FLASH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 82K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 75
DigiKey Programmable: Not Verified
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XE164K96F66LACFXUMA1 XE164K96F66LACFXUMA1 Infineon Technologies XE164_V2.1_Aug2008.pdf Description: IC MCU 16BIT 768KB FLASH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 82K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 11x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 75
DigiKey Programmable: Not Verified
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XE164K96F66LACFXQMA1 XE164K96F66LACFXQMA1 Infineon Technologies XE164_V2.1_Aug2008.pdf Description: IC MCU 16BIT 768KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 82K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 11x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 75
DigiKey Programmable: Not Verified
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XC228796F66LACKXUMA1 XC228796F66LACKXUMA1 Infineon Technologies Infineon-XC228X-DS-v02_01-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b40937b40162&ack=t Description: IC MCU 16/32B 768KB FLSH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 82K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 24x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 118
DigiKey Programmable: Not Verified
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XE164G96F66LACFXQMA1 XE164G96F66LACFXQMA1 Infineon Technologies XE164_V2.1_Aug2008.pdf Description: IC MCU 16BIT 768KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 82K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 11x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 75
DigiKey Programmable: Not Verified
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XE164H96F66LACFXQMA1 XE164H96F66LACFXQMA1 Infineon Technologies XE164_ds_v2.1_2008_08.pdf Description: IC MCU 16BIT 768KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 82K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 75
DigiKey Programmable: Not Verified
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CY9AF344LAQN-G-AVE2 CY9AF344LAQN-G-AVE2 Infineon Technologies Description: IC MCU 32BIT 288KB 64VFQFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 51
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AUIRG4PC40S-E AUIRG4PC40S-E Infineon Technologies auirg4pc40s-e.pdf?fileId=5546d462533600a4015355ba2a1c1517 Description: IGBT 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 31A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 22ns/650ns
Switching Energy: 450µJ (on), 6.5mJ (off)
Test Condition: 480V, 31A, 10Ohm, 15V
Gate Charge: 150 nC
Grade: Automotive
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 160 W
Qualification: AEC-Q101
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1EDI3025ASXUMA1 1EDI3025ASXUMA1 Infineon Technologies Infineon-1EDI3025AS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190886944052487 Description: BTM9011EPXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Magnetic Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 5700Vrms
Approval Agency: IEC/EN/DIN, UL, VDE
Supplier Device Package: PG-DSO-20-91
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 3V ~ 5.5V, 13.5V ~ 17V
Qualification: AEC-Q100
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1EDI3025ASXUMA1 1EDI3025ASXUMA1 Infineon Technologies Infineon-1EDI3025AS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190886944052487 Description: BTM9011EPXUMA1
Packaging: Cut Tape (CT)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Magnetic Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 5700Vrms
Approval Agency: IEC/EN/DIN, UL, VDE
Supplier Device Package: PG-DSO-20-91
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 3V ~ 5.5V, 13.5V ~ 17V
Qualification: AEC-Q100
на замовлення 424 шт:
термін постачання 21-31 дні (днів)
1+358.57 грн
10+262.56 грн
25+241.83 грн
100+205.58 грн
250+195.39 грн
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S26KL512SDABHB030 S26KL512SDABHB030 Infineon Technologies Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f Description: IC FLASH 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Grade: Automotive
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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4DIR0400HXUMA1 4DIR0400HXUMA1 Infineon Technologies Infineon-Datasheet_ISOFACE(TM)_4DIRx4xxH_family-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d01899cc3b5175436 Description: DGTL ISOLTR 5.7KV 4CH SPI 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 6.5V
Data Rate: 40Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: PG-DSO-16-46
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 26ns, 26ns (Typ)
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 3ns
Number of Channels: 4
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OPTIGATRUSTADAPTERTOBO1 Infineon-OPTIGA_Trust_Adapter_UserGuide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c901008d1019038911a2d3567
OPTIGATRUSTADAPTERTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD
Packaging: Box
Function: Adapter Board
Type: Interface
Contents: Board(s)
Utilized IC / Part: OPTIGA Trust
Platform: Arduino
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3740.88 грн
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CY8C4149AZSS558XQLA1 Infineon-CY8C4149AZS-S575-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c8929aa4d018a21719a00247e
CY8C4149AZSS558XQLA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 384KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Grade: Automotive
Number of I/O: 84
Qualification: AEC-Q100
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IRGP6640D-EPBF IRGP6640DPbF%2C-EPbF.pdf
IRGP6640D-EPBF
Виробник: Infineon Technologies
Description: IGBT 600V 53A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 40ns/100ns
Switching Energy: 90µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 53 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 200 W
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IRGP6630DPBF IRGP6630DPbF%2C-EPbF.pdf
IRGP6630DPBF
Виробник: Infineon Technologies
Description: IGBT 600V 47A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 18A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 40ns/95ns
Switching Energy: 75µJ (on), 350µJ (off)
Test Condition: 400V, 18A, 22Ohm, 15V
Gate Charge: 30 nC
Current - Collector (Ic) (Max): 47 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 54 A
Power - Max: 192 W
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IRGP6640DPBF IRGP6640DPbF%2C-EPbF.pdf
IRGP6640DPBF
Виробник: Infineon Technologies
Description: IGBT 600V 53A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 40ns/100ns
Switching Energy: 300µJ (on), 840µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 53 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 200 W
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IRGP6650DPBF IRGP6650DPbF%2C-EPbF.pdf
IRGP6650DPBF
Виробник: Infineon Technologies
Description: IGBT 600V 80A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 35A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 40ns/105ns
Switching Energy: 300µJ (on), 630µJ (off)
Test Condition: 400V, 35A, 10Ohm, 15V
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 306 W
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CY8C21334-24PVXAT download
CY8C21334-24PVXAT
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 20SSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 28x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 20-SSOP
Number of I/O: 16
DigiKey Programmable: Verified
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CY7C68003-20FNXI CY7C68003.pdf
CY7C68003-20FNXI
Виробник: Infineon Technologies
Description: IC TRANSCEIVER FULL 1/1 20WLCSP
Packaging: Tray
Package / Case: 20-UFBGA, WLCSP
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.3V
Number of Drivers/Receivers: 1/1
Protocol: USB 2.0
Supplier Device Package: 20-WLCSP (2.14x1.76)
Duplex: Full
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IAUCN04S7N024DATMA1 Infineon-IAUCN04S7N024D-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca501927583bfe71044
IAUCN04S7N024DATMA1
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 72W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2067pF @ 20V
Rds On (Max) @ Id, Vgs: 2.49mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 25µA
Supplier Device Package: PG-TDSON-8-60
Grade: Automotive
Qualification: AEC-Q101
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IAUCN04S7N024DATMA1 Infineon-IAUCN04S7N024D-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca501927583bfe71044
IAUCN04S7N024DATMA1
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 72W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2067pF @ 20V
Rds On (Max) @ Id, Vgs: 2.49mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 25µA
Supplier Device Package: PG-TDSON-8-60
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1880 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+159.36 грн
10+98.71 грн
100+68.50 грн
500+52.16 грн
1000+46.95 грн
Мінімальне замовлення: 3
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CYPAP111A3-10SXQ Infineon-PAG1P_Datasheet_Primary_Side_Startup_Controller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9bdef7294
CYPAP111A3-10SXQ
Виробник: Infineon Technologies
Description: PRIMARY SIDE STARTUP CONTROLLER
Packaging: Tube
Package / Case: 10-SOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 70%
Frequency - Switching: 30kHz
Internal Switch(s): No
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Flyback, Secondary Side SR
Voltage - Supply (Vcc/Vdd): 85V ~ 265V
Supplier Device Package: 10-SOIC
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit, UVLO
Control Features: Frequency Control, Soft Start
на замовлення 4850 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+86.32 грн
10+60.19 грн
97+48.24 грн
194+43.05 грн
291+41.95 грн
582+40.32 грн
1067+38.49 грн
2522+37.15 грн
Мінімальне замовлення: 4
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IRS2108SPBF IRSDS08085-1.pdf?t.download=true&u=5oefqw
IRS2108SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
на замовлення 2702 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+141.10 грн
10+100.15 грн
95+81.74 грн
190+73.23 грн
285+71.49 грн
570+68.93 грн
1045+65.97 грн
2565+63.78 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CY37064P44-125AC Ultra%20370000%20CPLD%20Family.pdf
CY37064P44-125AC
Виробник: Infineon Technologies
Description: IC CPLD 64MC 10NS 44TQFP
Packaging: Bag
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Programmable Type: In-System Reprogrammable™ (ISR™) CMOS
Number of Macrocells: 64
Operating Temperature: 0°C ~ 70°C (TA)
Delay Time tpd(1) Max: 10 ns
Supplier Device Package: 44-TQFP (10x10)
Voltage Supply - Internal: 4.75V ~ 5.25V
Number of I/O: 37
DigiKey Programmable: Not Verified
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CY37064P44-125JXC Ultra%20370000%20CPLD%20Family.pdf
CY37064P44-125JXC
Виробник: Infineon Technologies
Description: IC CPLD 64MC 10NS 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Programmable Type: In-System Reprogrammable™ (ISR™) CMOS
Number of Macrocells: 64
Operating Temperature: 0°C ~ 70°C (TA)
Delay Time tpd(1) Max: 10 ns
Supplier Device Package: 44-PLCC (16.61x16.61)
Voltage Supply - Internal: 4.75V ~ 5.25V
Number of I/O: 37
DigiKey Programmable: Verified
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CY37064P44-125AXC Ultra%20370000%20CPLD%20Family.pdf
CY37064P44-125AXC
Виробник: Infineon Technologies
Description: IC CPLD 64MC 10NS 44TQFP
Packaging: Tray
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Programmable Type: In-System Reprogrammable™ (ISR™) CMOS
Number of Macrocells: 64
Operating Temperature: 0°C ~ 70°C (TA)
Delay Time tpd(1) Max: 10 ns
Supplier Device Package: 44-TQFP (10x10)
Voltage Supply - Internal: 4.75V ~ 5.25V
Number of I/O: 37
DigiKey Programmable: Verified
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CY37064P84-125JC Ultra%20370000%20CPLD%20Family.pdf
CY37064P84-125JC
Виробник: Infineon Technologies
Description: IC CPLD 64MC 10NS 84PLCC
Packaging: Tube
Package / Case: 84-LCC (J-Lead)
Mounting Type: Surface Mount
Programmable Type: In-System Reprogrammable™ (ISR™) CMOS
Number of Macrocells: 64
Operating Temperature: 0°C ~ 70°C (TA)
Delay Time tpd(1) Max: 10 ns
Supplier Device Package: 84-PLCC (29.31x29.31)
Voltage Supply - Internal: 4.75V ~ 5.25V
Number of I/O: 69
DigiKey Programmable: Not Verified
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AIMCQ120R160M1TXTMA1 Infineon-AIMCQ120R160M1T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01910fe657236b2a
AIMCQ120R160M1TXTMA1
Виробник: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 5A, 20V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 1.5mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 800 V
Qualification: AEC-Q101
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AIMCQ120R160M1TXTMA1 Infineon-AIMCQ120R160M1T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01910fe657236b2a
AIMCQ120R160M1TXTMA1
Виробник: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 5A, 20V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 1.5mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 800 V
Qualification: AEC-Q101
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+578.52 грн
10+379.10 грн
100+293.10 грн
В кошику  од. на суму  грн.
IM12B20EC1XKMA1 Infineon-IM12B20EC1-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c90530b3a01908868d7af232a
IM12B20EC1XKMA1
Виробник: Infineon Technologies
Description: IM12B20EC1XKMA1
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.094", 27.80mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2500Vrms
Current: 30 A
Voltage: 1.2 kV
на замовлення 245 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2984.73 грн
14+2295.91 грн
28+2202.74 грн
112+1935.93 грн
В кошику  од. на суму  грн.
IAUMN10S5N016GATMA1
Виробник: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
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IR2131JTRPBF ir2131.pdf?fileId=5546d462533600a4015355c882d7169d
IR2131JTRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tape & Reel (TR)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
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IR2131JTRPBF ir2131.pdf?fileId=5546d462533600a4015355c882d7169d
IR2131JTRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Cut Tape (CT)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
на замовлення 483 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+632.47 грн
10+473.25 грн
25+439.28 грн
100+377.24 грн
250+360.55 грн
В кошику  од. на суму  грн.
IM64D130AXTMA1 Infineon-IM64D130A-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8eeb092c018f0b8b10921198
IM64D130AXTMA1
Виробник: Infineon Technologies
Description: XENSIV - IM64D130A Automotive ME
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -36dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 64dB
Termination: Solder Pads
Direction: Omnidirectional
Ratings: IP57 - Dust Protected, Waterproof
Port Location: Bottom
Height (Max): 0.043" (1.08mm)
Grade: Automotive
Voltage - Rated: 1.8 V
Current - Supply: 1.4 A
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 10 Hz ~ 10 kHz
Qualification: AEC-Q103
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IM64D130AXTMA1 Infineon-IM64D130A-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8eeb092c018f0b8b10921198
IM64D130AXTMA1
Виробник: Infineon Technologies
Description: XENSIV - IM64D130A Automotive ME
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -36dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 64dB
Termination: Solder Pads
Direction: Omnidirectional
Ratings: IP57 - Dust Protected, Waterproof
Port Location: Bottom
Height (Max): 0.043" (1.08mm)
Grade: Automotive
Voltage - Rated: 1.8 V
Current - Supply: 1.4 A
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 10 Hz ~ 10 kHz
Qualification: AEC-Q103
на замовлення 4958 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+103.75 грн
10+81.53 грн
25+75.13 грн
50+66.28 грн
100+62.32 грн
250+58.96 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
CY8C4125PVS-482ZT Infineon-Automotive_PSoC_4_PSoC_4100_Family_Programmable_System-on-Chip_(PSoC_)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed973a95b0d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integrati
CY8C4125PVS-482ZT
Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 28SSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Grade: Automotive
Number of I/O: 24
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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CG8968AMT
Виробник: Infineon Technologies
Description: CG8968AMT
Packaging: Bulk
DigiKey Programmable: Not Verified
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CY7C2270KV18-550BZXC Infineon-CY7C2268KV18_CY7C2270KV18_36-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec197363665
CY7C2270KV18-550BZXC
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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CY7C1565KV18-550BZXC Infineon-CY7C1565KV18_72-Mbit_QDR(R)_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe0b293135&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl
CY7C1565KV18-550BZXC
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
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CY14B256KA-SP25XIT Infineon-CY14B256KA_256-Kbit_(32_K_8)_nvSRAM_with_Real_Time_Clock-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd912f303f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY14B256KA-SP25XIT
Виробник: Infineon Technologies
Description: IC NVSRAM 256KBIT PAR 48SSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-SSOP
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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S25FL128LAGNFB013 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
S25FL128LAGNFB013
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
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IRFP4868PBF IRSDS19316-1.pdf?t.download=true&u=5oefqw
IRFP4868PBF
Виробник: Infineon Technologies
Description: IRFP4868 - 12V-300V N-CHANNEL PO
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 42A, 10V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10774 pF @ 50 V
на замовлення 133 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
133+218.20 грн
Мінімальне замовлення: 133
В кошику  од. на суму  грн.
T1040N20TOFVTXPSA1 T1040N.pdf
Виробник: Infineon Technologies
Description: SCR MODULE 2.2KV 2200A TO-200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 21500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1040 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 2200 A
Voltage - Off State: 2.2 kV
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D2450N07TXPSA1 Infineon-D2450N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd8012863a4b431538d
D2450N07TXPSA1
Виробник: Infineon Technologies
Description: DIODE STANDARD 700V 2450A
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2450A
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 2000 A
Current - Reverse Leakage @ Vr: 50 mA @ 700 V
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6EDL04N065PRXUMA1 6EDL04xR%20Family%20final%20datasheet%20Rev2_0.pdf
6EDL04N065PRXUMA1
Виробник: Infineon Technologies
Description: 6EDL04N065PRXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 25-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 25V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-TSSOP-25
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+116.37 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
6EDL04N065PRXUMA1 6EDL04xR%20Family%20final%20datasheet%20Rev2_0.pdf
6EDL04N065PRXUMA1
Виробник: Infineon Technologies
Description: 6EDL04N065PRXUMA1
Packaging: Cut Tape (CT)
Package / Case: 25-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 25V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-TSSOP-25
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+186.75 грн
5+160.17 грн
10+152.90 грн
25+135.38 грн
50+129.80 грн
100+124.69 грн
500+112.54 грн
1000+108.77 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
1EDI3035ASXUMA1 Infineon-1EDI3035AS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a019088695ff7250c
1EDI3035ASXUMA1
Виробник: Infineon Technologies
Description: 1EDI3035ASXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Magnetic Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 5700Vrms
Approval Agency: IEC/EN/DIN, UL, VDE
Supplier Device Package: PG-DSO-20-91
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 3V ~ 5.5V, 13.5V ~ 20V
Qualification: AEC-Q100
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+159.70 грн
2000+150.20 грн
3000+148.40 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
1EDI3035ASXUMA1 Infineon-1EDI3035AS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a019088695ff7250c
1EDI3035ASXUMA1
Виробник: Infineon Technologies
Description: 1EDI3035ASXUMA1
Packaging: Cut Tape (CT)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Magnetic Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 5700Vrms
Approval Agency: IEC/EN/DIN, UL, VDE
Supplier Device Package: PG-DSO-20-91
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 3V ~ 5.5V, 13.5V ~ 20V
Qualification: AEC-Q100
на замовлення 4860 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+284.69 грн
10+207.41 грн
25+190.64 грн
100+161.62 грн
250+153.38 грн
500+148.41 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IDDD06G65C6XTMA1 Infineon-IDDD06G65C6-DS-v02_00-EN.pdf?fileId=5546d462625a528f01628f86ff8c0e09
Виробник: Infineon Technologies
Description: DIODE SIC 650V 18A PGHDSOP101
Packaging: Bulk
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 302pF @ 1V, 1MHz
Current - Average Rectified (Io): 18A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 20 µA @ 420 V
на замовлення 543 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
233+102.08 грн
Мінімальне замовлення: 233
В кошику  од. на суму  грн.
IDDD12G65C6XTMA1 Infineon-Selection_guide_CoolSiC_Silicon_Carbide_Schottky_diodes-SG-v05_00-EN.pdf?fileId=db3a3043399628450139b0701a1d21d2
IDDD12G65C6XTMA1
Виробник: Infineon Technologies
Description: DIODE SIC 650V 34A PGHDSOP101
Packaging: Bulk
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 594pF @ 1V, 1MHz
Current - Average Rectified (Io): 34A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 40 µA @ 420 V
на замовлення 5200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
121+197.83 грн
Мінімальне замовлення: 121
В кошику  од. на суму  грн.
AUIRF1010Z auirf1010z.pdf?fileId=5546d462533600a4015355a89a4a1364
AUIRF1010Z
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 75A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
Qualification: AEC-Q101
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BC847CE6433HTMA1 bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf
BC847CE6433HTMA1
Виробник: Infineon Technologies
Description: TRANS NPN 45V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7717+2.87 грн
Мінімальне замовлення: 7717
В кошику  од. на суму  грн.
SIDC56D60E6X1SA1 SIDC56D60E6_L4223M.pdf?folderId=db3a304412b407950112b436e1b366f6&fileId=db3a304412b407950112b436e23366f7
Виробник: Infineon Technologies
Description: DIODE STD 600V 150A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 150A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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IQFH47N04NM6ATMA1 Infineon-IQFH47N04NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101904de8dede050b
IQFH47N04NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 507A (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Supplier Device Package: PG-TSON-12-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 221 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13300 pF @ 20 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+166.20 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IQFH47N04NM6ATMA1 Infineon-IQFH47N04NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101904de8dede050b
IQFH47N04NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 507A (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Supplier Device Package: PG-TSON-12-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 221 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13300 pF @ 20 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+425.80 грн
10+273.35 грн
100+195.97 грн
500+152.95 грн
1000+150.20 грн
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IGB110S10S1XTMA1
Виробник: Infineon Technologies
Description: MV GAN DISCRETES
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 5V
Power Dissipation (Max): 2.5W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 3mA
Supplier Device Package: PG-TSON-4-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 50 V
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AUIRLS3034 AUIRLS3034.pdf
AUIRLS3034
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 195A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 10315 pF @ 25 V
Qualification: AEC-Q101
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ISC800P06LMATMA1 Infineon-ISC800P06LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185a9e4c89536f2
ISC800P06LMATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19.6A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 16A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 724µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 30 V
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ISC800P06LMATMA1 Infineon-ISC800P06LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185a9e4c89536f2
ISC800P06LMATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19.6A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 16A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 724µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 30 V
на замовлення 4594 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+124.50 грн
10+76.33 грн
100+51.19 грн
500+37.92 грн
1000+34.66 грн
2000+34.41 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SAF-XE164H-96F66L AC XE164_V2.1_Aug2008.pdf
SAF-XE164H-96F66L AC
Виробник: Infineon Technologies
Description: IC MCU 16BIT 768KB FLASH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 82K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 75
DigiKey Programmable: Not Verified
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XE164K96F66LACFXUMA1 XE164_V2.1_Aug2008.pdf
XE164K96F66LACFXUMA1
Виробник: Infineon Technologies
Description: IC MCU 16BIT 768KB FLASH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 82K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 11x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 75
DigiKey Programmable: Not Verified
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XE164K96F66LACFXQMA1 XE164_V2.1_Aug2008.pdf
XE164K96F66LACFXQMA1
Виробник: Infineon Technologies
Description: IC MCU 16BIT 768KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 82K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 11x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 75
DigiKey Programmable: Not Verified
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XC228796F66LACKXUMA1 Infineon-XC228X-DS-v02_01-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b40937b40162&ack=t
XC228796F66LACKXUMA1
Виробник: Infineon Technologies
Description: IC MCU 16/32B 768KB FLSH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 82K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 24x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 118
DigiKey Programmable: Not Verified
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XE164G96F66LACFXQMA1 XE164_V2.1_Aug2008.pdf
XE164G96F66LACFXQMA1
Виробник: Infineon Technologies
Description: IC MCU 16BIT 768KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 82K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 11x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 75
DigiKey Programmable: Not Verified
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XE164H96F66LACFXQMA1 XE164_ds_v2.1_2008_08.pdf
XE164H96F66LACFXQMA1
Виробник: Infineon Technologies
Description: IC MCU 16BIT 768KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 82K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 75
DigiKey Programmable: Not Verified
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CY9AF344LAQN-G-AVE2
CY9AF344LAQN-G-AVE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 288KB 64VFQFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 51
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AUIRG4PC40S-E auirg4pc40s-e.pdf?fileId=5546d462533600a4015355ba2a1c1517
AUIRG4PC40S-E
Виробник: Infineon Technologies
Description: IGBT 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 31A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 22ns/650ns
Switching Energy: 450µJ (on), 6.5mJ (off)
Test Condition: 480V, 31A, 10Ohm, 15V
Gate Charge: 150 nC
Grade: Automotive
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 160 W
Qualification: AEC-Q101
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1EDI3025ASXUMA1 Infineon-1EDI3025AS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190886944052487
1EDI3025ASXUMA1
Виробник: Infineon Technologies
Description: BTM9011EPXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Magnetic Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 5700Vrms
Approval Agency: IEC/EN/DIN, UL, VDE
Supplier Device Package: PG-DSO-20-91
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 3V ~ 5.5V, 13.5V ~ 17V
Qualification: AEC-Q100
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1EDI3025ASXUMA1 Infineon-1EDI3025AS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190886944052487
1EDI3025ASXUMA1
Виробник: Infineon Technologies
Description: BTM9011EPXUMA1
Packaging: Cut Tape (CT)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Magnetic Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 5700Vrms
Approval Agency: IEC/EN/DIN, UL, VDE
Supplier Device Package: PG-DSO-20-91
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 3V ~ 5.5V, 13.5V ~ 17V
Qualification: AEC-Q100
на замовлення 424 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+358.57 грн
10+262.56 грн
25+241.83 грн
100+205.58 грн
250+195.39 грн
В кошику  од. на суму  грн.
S26KL512SDABHB030 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f
S26KL512SDABHB030
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Grade: Automotive
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
4DIR0400HXUMA1 Infineon-Datasheet_ISOFACE(TM)_4DIRx4xxH_family-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d01899cc3b5175436
4DIR0400HXUMA1
Виробник: Infineon Technologies
Description: DGTL ISOLTR 5.7KV 4CH SPI 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 6.5V
Data Rate: 40Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: PG-DSO-16-46
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 26ns, 26ns (Typ)
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 3ns
Number of Channels: 4
товару немає в наявності
В кошику  од. на суму  грн.
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