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AIMDQ75R020M1HXUMA1 AIMDQ75R020M1HXUMA1 Infineon Technologies Infineon-AIMDQ75R020M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018ef09e47dd2aca Description: AIMDQ75R020M1HXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tj)
Rds On (Max) @ Id, Vgs: 18mOhm @ 32.5A, 20V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 11.7mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2217 pF @ 500 V
Qualification: AEC-Q101
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AIMDQ75R020M1HXUMA1 AIMDQ75R020M1HXUMA1 Infineon Technologies Infineon-AIMDQ75R020M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018ef09e47dd2aca Description: AIMDQ75R020M1HXUMA1
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tj)
Rds On (Max) @ Id, Vgs: 18mOhm @ 32.5A, 20V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 11.7mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2217 pF @ 500 V
Qualification: AEC-Q101
на замовлення 559 шт:
термін постачання 21-31 дні (днів)
1+1196.10 грн
10+916.61 грн
100+813.23 грн
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2ED2388S06FXUMA1 2ED2388S06FXUMA1 Infineon Technologies Infineon-2ED2388S06F-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f1a6b9ef614f9 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
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CY8C4146LQS-S263 CY8C4146LQS-S263 Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8 Description: IC MCU 32BIT 64KB FLASH 40QFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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CY8C4147LQS-S263 CY8C4147LQS-S263 Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8 Description: IC MCU 32BIT 128KB FLASH 40QFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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CY8C4147LQS-S265T CY8C4147LQS-S265T Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8 Description: IC MCU 32BIT 128KB FLASH 64QFN
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 64-QFN (9x9)
Grade: Automotive
Number of I/O: 34
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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CY8C4147AZS-S265T CY8C4147AZS-S265T Infineon Technologies Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16, 20x10/12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
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CY8C4147LQSS265UXQSA1 CY8C4147LQSS265UXQSA1 Infineon Technologies Infineon-CY8C4147LQS-S295-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8 Description: IC MCU 32BIT 128KB FLASH 64VFQFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, TRNG, WDT
Supplier Device Package: 64-QFN (9x9)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
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PROF2BTS70061EPPDBTOBO1 PROF2BTS70061EPPDBTOBO1 Infineon Technologies Description: PROF_2 BTS7006-1EPP DB
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7006-1EPP
Platform: Arduino
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+3626.50 грн
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IKP08N65F5XKSA1 IKP08N65F5XKSA1 Infineon Technologies DS_IKP08N65F5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af9bac1de5da9 Description: IGBT 650V 18A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: PG-TO220-3-111
Td (on/off) @ 25°C: 10ns/116ns
Switching Energy: 70µJ (on), 20µJ (off)
Test Condition: 400V, 4A, 48Ohm, 15V
Gate Charge: 22 nC
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 70 W
на замовлення 494 шт:
термін постачання 21-31 дні (днів)
2+181.44 грн
50+85.25 грн
100+76.58 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IAUMN08S5N013GAUMA1 Infineon Technologies Infineon-IAUMN08S5N013G-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f2f29b336110c Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 4-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tj)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 307W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 214µA
Supplier Device Package: PG-HSOG-4-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12496 pF @ 40 V
Qualification: AEC-Q101
на замовлення 1990 шт:
термін постачання 21-31 дні (днів)
2+296.04 грн
10+215.65 грн
25+198.24 грн
100+168.06 грн
250+159.51 грн
500+154.35 грн
1000+147.64 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IAUMN08S5N013GAUMA1 Infineon Technologies Infineon-IAUMN08S5N013G-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f2f29b336110c Description: MOSFET_(75V 120V(
Packaging: Tray
Package / Case: 4-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tj)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 307W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 214µA
Supplier Device Package: PG-HSOG-4-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12496 pF @ 40 V
Qualification: AEC-Q101
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BAT2402ELSE6327XTSA1 BAT2402ELSE6327XTSA1 Infineon Technologies Infineon-BAT24-02ELS-DS-v02_00-EN.pdf?fileId=5546d46265f064ff0166389645e44e92 Description: DIODE SCHOTTKY 4V 100MW TSSLP21
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.23pF @ 0V, 1MHz
Resistance @ If, F: 10Ohm @ 50mA, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-TSSLP-2-1
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
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IPT60R037CM8XTMA1 IPT60R037CM8XTMA1 Infineon Technologies Infineon-IPT60R037CM8-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8d2fe47b018d9c7949012a6c Description: IPT60R037CM8XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tj)
Rds On (Max) @ Id, Vgs: 37mOhm @ 27A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 680µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3458 pF @ 400 V
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IPT60R037CM8XTMA1 IPT60R037CM8XTMA1 Infineon Technologies Infineon-IPT60R037CM8-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8d2fe47b018d9c7949012a6c Description: IPT60R037CM8XTMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tj)
Rds On (Max) @ Id, Vgs: 37mOhm @ 27A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 680µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3458 pF @ 400 V
на замовлення 1466 шт:
термін постачання 21-31 дні (днів)
1+480.67 грн
10+373.36 грн
100+302.03 грн
500+246.99 грн
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S25FS256SAGMFI000 S25FS256SAGMFI000 Infineon Technologies Infineon-S25FS128S_S25FS256S_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_MirrorBit(R)_Non-Volatile_Flash-DataSheet-v14_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ed6b5ab5758&utm_source=cypress&utm_medium=referral&utm_campaign Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
на замовлення 1200 шт:
термін постачання 21-31 дні (днів)
2+300.02 грн
10+268.91 грн
25+260.86 грн
50+239.10 грн
240+226.20 грн
480+224.55 грн
Мінімальне замовлення: 2
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S25FS256SAGBHI203 S25FS256SAGBHI203 Infineon Technologies Infineon-S25FS128S_S25FS256S_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_MirrorBit(R)_Non-Volatile_Flash-DataSheet-v14_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ed6b5ab5758&utm_source=cypress&utm_medium=referral&utm_campaign Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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S25FS256SAGBHI203 S25FS256SAGBHI203 Infineon Technologies Infineon-S25FS128S_S25FS256S_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_MirrorBit(R)_Non-Volatile_Flash-DataSheet-v14_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ed6b5ab5758&utm_source=cypress&utm_medium=referral&utm_campaign Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Cut Tape (CT)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
на замовлення 2394 шт:
термін постачання 21-31 дні (днів)
1+411.43 грн
10+351.82 грн
25+335.47 грн
50+303.69 грн
100+292.95 грн
250+279.33 грн
500+265.02 грн
1000+255.62 грн
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S25FS256SAGNFI003 S25FS256SAGNFI003 Infineon Technologies Infineon-S25FS128S_S25FS256S_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_MirrorBit(R)_Non-Volatile_Flash-DataSheet-v14_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ed6b5ab5758&utm_source=cypress&utm_medium=referral&utm_campaign Description: IC FLASH 256MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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S25FS256SAGNFI003 S25FS256SAGNFI003 Infineon Technologies Infineon-S25FS128S_S25FS256S_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_MirrorBit(R)_Non-Volatile_Flash-DataSheet-v14_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ed6b5ab5758&utm_source=cypress&utm_medium=referral&utm_campaign Description: IC FLASH 256MBIT SPI/QUAD 8WSON
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
на замовлення 1662 шт:
термін постачання 21-31 дні (днів)
1+411.43 грн
10+351.82 грн
25+335.47 грн
50+303.69 грн
100+292.95 грн
250+279.33 грн
500+265.02 грн
1000+255.62 грн
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IR2235PBF IR2235PBF Infineon Technologies IRSDS12168-1.pdf?t.download=true&u=5oefqw Description: IR2235 - GATE DRIVER
Packaging: Bulk
DigiKey Programmable: Not Verified
на замовлення 470 шт:
термін постачання 21-31 дні (днів)
15+1493.47 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
IR2235PBF IR2235PBF Infineon Technologies IRSDS12168-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: 28-PDIP
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
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S29GL128P90FFIR22 S29GL128P90FFIR22 Infineon Technologies 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
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S29GL128P90FFIR22 S29GL128P90FFIR22 Infineon Technologies 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Cut Tape (CT)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
на замовлення 348 шт:
термін постачання 21-31 дні (днів)
1+470.32 грн
10+421.48 грн
25+408.70 грн
50+374.52 грн
100+365.49 грн
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CY9BF406NAPMC-G-UNE2 CY9BF406NAPMC-G-UNE2 Infineon Technologies Description: IC MCU 32BIT 512KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 80
DigiKey Programmable: Not Verified
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KITXMC142GOTOBO1 KITXMC142GOTOBO1 Infineon Technologies Infineon-KIT_XMC14_2GO-UserManual-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801915a63408673fe Description: KIT_XMC14_2GO
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M0
Utilized IC / Part: XMC1400
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CY7C1441KVE33-133AXI CY7C1441KVE33-133AXI Infineon Technologies Infineon-CY7C1441KV33_CY7C1443KV33_CY7C1441KVE33_36-Mbit_(1_M_36_2_M_18)_Flow-Through_SRAM_(With_ECC)-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecf21fc4994 Description: IC SRAM 36MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Standard
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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CY7C1041GN30-10BVJXIT CY7C1041GN30-10BVJXIT Infineon Technologies Infineon-CY7C1041GN_4-Mbit_(256K_words_16_bit)_Static_RAM-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed82ae859a5&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 4MBIT PARALLEL 48VFBGA
Packaging: Cut Tape (CT)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
1+558.66 грн
10+477.43 грн
25+455.30 грн
50+412.17 грн
100+397.60 грн
250+379.10 грн
500+359.66 грн
1000+346.90 грн
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CY7C1011DV33-10ZSXI CY7C1011DV33-10ZSXI Infineon Technologies download description Description: IC SRAM 2MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
на замовлення 358 шт:
термін постачання 21-31 дні (днів)
1+374.83 грн
10+320.25 грн
25+305.37 грн
40+279.67 грн
135+262.56 грн
270+253.27 грн
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CY7C1019CV33-12ZXC CY7C1019CV33-12ZXC Infineon Technologies CY7C1019CV33%20RevG.pdf Description: IC SRAM 1MBIT PARALLEL 32TSOP II
Packaging: Tray
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CY7C1019CV33-15ZXI CY7C1019CV33-15ZXI Infineon Technologies CY7C1019CV33%20RevG.pdf Description: IC SRAM 1MBIT PARALLEL 32TSOP II
Packaging: Tray
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CY7C1019B-12VC CY7C1019B-12VC Infineon Technologies CY7C1019%2C10191B.pdf Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Tube
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CY7C1019D-10ZSXI CY7C1019D-10ZSXI Infineon Technologies Infineon-CY7C1019D_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf2577333a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 1MBIT PARALLEL 32TSOP II
Packaging: Tray
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CY7C1019DV33-10ZSXI CY7C1019DV33-10ZSXI Infineon Technologies download description Description: IC SRAM 1MBIT PARALLEL 32TSOP II
Packaging: Tray
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CY7C1019CV33-10ZXA CY7C1019CV33-10ZXA Infineon Technologies 5047 Description: IC SRAM 1MBIT PARALLEL 32TSOP II
Packaging: Tray
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CY7C1049G-10ZSXI CY7C1049G-10ZSXI Infineon Technologies Infineon-CY7C1049G_and_CY7C1049GE_are_high-performance_CMOS_fast_static_RAM_devices_with_embedded_ECC-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7e2c15966&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY7C1049G18-15ZSXI CY7C1049G18-15ZSXI Infineon Technologies Infineon-CY7C1049G_and_CY7C1049GE_are_high-performance_CMOS_fast_static_RAM_devices_with_embedded_ECC-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7e2c15966&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY7C1049BV33-15VC CY7C1049BV33-15VC Infineon Technologies CY7C1049BV33.pdf Description: IC SRAM 4MBIT 15NS 36SOJ
Packaging: Tube
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
на замовлення 151 шт:
термін постачання 21-31 дні (днів)
31+736.74 грн
Мінімальне замовлення: 31
В кошику  од. на суму  грн.
CY7C1049CV33-15VC CY7C1049CV33-15VC Infineon Technologies CY7C1049CV33.pdf Description: IC SRAM 4MBIT PARALLEL 36SOJ
Packaging: Tube
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY7C1049CV33-15VXC CY7C1049CV33-15VXC Infineon Technologies Description: IC SRAM 4MBIT PARALLEL 36SOJ
Packaging: Tube
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY7C1049G18-15ZSXIT CY7C1049G18-15ZSXIT Infineon Technologies Infineon-CY7C1049G_and_CY7C1049GE_are_high-performance_CMOS_fast_static_RAM_devices_with_embedded_ECC-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7e2c15966&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY7C1049B-15VXC CY7C1049B-15VXC Infineon Technologies CY7C1049B%20RevB.pdf Description: IC SRAM 4MBIT PARALLEL 36SOJ
Packaging: Tube
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY7C1049G-10ZSXIT CY7C1049G-10ZSXIT Infineon Technologies Infineon-CY7C1049G_and_CY7C1049GE_are_high-performance_CMOS_fast_static_RAM_devices_with_embedded_ECC-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7e2c15966&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY7C1049GE30-10ZSXIT CY7C1049GE30-10ZSXIT Infineon Technologies Infineon-CY7C1049G_and_CY7C1049GE_are_high-performance_CMOS_fast_static_RAM_devices_with_embedded_ECC-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7e2c15966&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY7C1049BL-17VC CY7C1049BL-17VC Infineon Technologies CY7C1049B.pdf Description: IC SRAM 4MBIT PARALLEL 36SOJ
Packaging: Tube
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Write Cycle Time - Word, Page: 17ns
Memory Interface: Parallel
Access Time: 17 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY7C1049BNL-17VC CY7C1049BNL-17VC Infineon Technologies CY7C1049BN.pdf Description: IC SRAM 4MBIT PARALLEL 36SOJ
Packaging: Bag
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Write Cycle Time - Word, Page: 17ns
Memory Interface: Parallel
Access Time: 17 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY7C1049B-15VC CY7C1049B-15VC Infineon Technologies CY7C1049B.pdf Description: IC SRAM 4MBIT PARALLEL 36SOJ
Packaging: Tube
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY7C1049B-20VC CY7C1049B-20VC Infineon Technologies CY7C1049B.pdf Description: IC SRAM 4MBIT PARALLEL 36SOJ
Packaging: Tube
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY7C1049BL-25VC CY7C1049BL-25VC Infineon Technologies CY7C1049B.pdf Description: IC SRAM 4MBIT PARALLEL 36SOJ
Packaging: Tube
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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IR3623MTRPBF IR3623MTRPBF Infineon Technologies IR3623MPbF.pdf Description: IC REG CTRLR BUCK 32MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Output Type: PWM Signal
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 1.2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 8.5V ~ 14.5V
Supplier Device Package: 32-MLPQ (5x5)
Control Features: Current Limit, Enable, Frequency Control, Power Good, Sequencing, Soft Start, Tracking
Output Phases: 2
Duty Cycle (Max): 85%
Clock Sync: Yes
Number of Outputs: 2
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CY90F867EPMC-G-90XX-SPE1 CY90F867EPMC-G-90XX-SPE1 Infineon Technologies Description: IC MCU 16BIT 128KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 24x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SCI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 80
DigiKey Programmable: Not Verified
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CY90F867EPMC-G-9022-SPE1 CY90F867EPMC-G-9022-SPE1 Infineon Technologies Description: IC MCU 16BIT 128KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 24x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SCI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 80
DigiKey Programmable: Not Verified
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CYTVII-B-H-8M-320-CPU CYTVII-B-H-8M-320-CPU Infineon Technologies Infineon-Traveo_II_CYTVII-B-H-8M-320-CPU-UserManual-v01_00-EN.pdf?fileId=5546d46275b79adb0175f49e612208c2 Description: THE CYTVII-B-H-8M-320-CPU, A 320
Packaging: Bulk
Mounting Type: Socket
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M7
Utilized IC / Part: CYT4BF
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+57806.82 грн
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CY7C68300C-56PVXC CY7C68300C-56PVXC Infineon Technologies download description Description: IC USB 2.0 BRIDGE AT2LP 56-SSOP
Packaging: Tube
Package / Case: 56-BSSOP (0.295", 7.50mm Width)
Function: Bridge, USB to ATA
Interface: ATA
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.15V ~ 3.45V
Current - Supply: 50mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 56-SSOP
DigiKey Programmable: Not Verified
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CY7C68300C-56LTXC CY7C68300C-56LTXC Infineon Technologies download Description: IC USB 2.0 BRIDGE AT2LP 56VQFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Function: Bridge, USB to ATA
Interface: ATA
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.15V ~ 3.45V
Current - Supply: 50mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 56-QFN (8x8)
DigiKey Programmable: Not Verified
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CY7C68320C-100AXC CY7C68320C-100AXC Infineon Technologies download Description: IC USB 2.0 BRIDGE AT2LP 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Function: Bridge, USB to ATA
Interface: ATA
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Current - Supply: 50mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 100-TQFP (14x20)
DigiKey Programmable: Not Verified
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IRS21064PBF IRS21064PBF Infineon Technologies INFN-S-A0002363322-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HI/LOW SIDE 14DIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
116+197.31 грн
Мінімальне замовлення: 116
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IRS21064PBF IRS21064PBF Infineon Technologies INFN-S-A0002363322-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HI/LOW SIDE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
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IDWD140E120D7XKSA1 IDWD140E120D7XKSA1 Infineon Technologies IDWD140E120D7_Rev1.00_12-15-23.pdf Description: DIODE GEN PURP 1200V 207A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 5A (Io)
Reverse Recovery Time (trr): 225 ns
Technology: Standard
Current - Average Rectified (Io): 207A
Supplier Device Package: PG-TO247-2-2
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 140 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
на замовлення 209 шт:
термін постачання 21-31 дні (днів)
1+478.28 грн
10+354.35 грн
25+327.75 грн
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CY8C4024LQSS411UXQLA1 Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4000S_Family_Datasheet_Programmable_System-on-Chip_PSoC-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee641716e5b Description: IC MCU
Packaging: Tray
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AIMDQ75R020M1HXUMA1 Infineon-AIMDQ75R020M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018ef09e47dd2aca
AIMDQ75R020M1HXUMA1
Виробник: Infineon Technologies
Description: AIMDQ75R020M1HXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tj)
Rds On (Max) @ Id, Vgs: 18mOhm @ 32.5A, 20V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 11.7mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2217 pF @ 500 V
Qualification: AEC-Q101
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AIMDQ75R020M1HXUMA1 Infineon-AIMDQ75R020M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018ef09e47dd2aca
AIMDQ75R020M1HXUMA1
Виробник: Infineon Technologies
Description: AIMDQ75R020M1HXUMA1
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tj)
Rds On (Max) @ Id, Vgs: 18mOhm @ 32.5A, 20V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 11.7mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2217 pF @ 500 V
Qualification: AEC-Q101
на замовлення 559 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1196.10 грн
10+916.61 грн
100+813.23 грн
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2ED2388S06FXUMA1 Infineon-2ED2388S06F-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f1a6b9ef614f9
2ED2388S06FXUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
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CY8C4146LQS-S263 Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8
CY8C4146LQS-S263
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 40QFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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CY8C4147LQS-S263 Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8
CY8C4147LQS-S263
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 40QFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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CY8C4147LQS-S265T Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8
CY8C4147LQS-S265T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64QFN
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 64-QFN (9x9)
Grade: Automotive
Number of I/O: 34
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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CY8C4147AZS-S265T
CY8C4147AZS-S265T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16, 20x10/12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
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CY8C4147LQSS265UXQSA1 Infineon-CY8C4147LQS-S295-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8
CY8C4147LQSS265UXQSA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64VFQFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, TRNG, WDT
Supplier Device Package: 64-QFN (9x9)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
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PROF2BTS70061EPPDBTOBO1
PROF2BTS70061EPPDBTOBO1
Виробник: Infineon Technologies
Description: PROF_2 BTS7006-1EPP DB
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7006-1EPP
Platform: Arduino
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3626.50 грн
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IKP08N65F5XKSA1 DS_IKP08N65F5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af9bac1de5da9
IKP08N65F5XKSA1
Виробник: Infineon Technologies
Description: IGBT 650V 18A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: PG-TO220-3-111
Td (on/off) @ 25°C: 10ns/116ns
Switching Energy: 70µJ (on), 20µJ (off)
Test Condition: 400V, 4A, 48Ohm, 15V
Gate Charge: 22 nC
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 70 W
на замовлення 494 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+181.44 грн
50+85.25 грн
100+76.58 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IAUMN08S5N013GAUMA1 Infineon-IAUMN08S5N013G-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f2f29b336110c
Виробник: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 4-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tj)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 307W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 214µA
Supplier Device Package: PG-HSOG-4-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12496 pF @ 40 V
Qualification: AEC-Q101
на замовлення 1990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+296.04 грн
10+215.65 грн
25+198.24 грн
100+168.06 грн
250+159.51 грн
500+154.35 грн
1000+147.64 грн
Мінімальне замовлення: 2
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IAUMN08S5N013GAUMA1 Infineon-IAUMN08S5N013G-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f2f29b336110c
Виробник: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Tray
Package / Case: 4-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tj)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 307W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 214µA
Supplier Device Package: PG-HSOG-4-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12496 pF @ 40 V
Qualification: AEC-Q101
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BAT2402ELSE6327XTSA1 Infineon-BAT24-02ELS-DS-v02_00-EN.pdf?fileId=5546d46265f064ff0166389645e44e92
BAT2402ELSE6327XTSA1
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 4V 100MW TSSLP21
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.23pF @ 0V, 1MHz
Resistance @ If, F: 10Ohm @ 50mA, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-TSSLP-2-1
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
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IPT60R037CM8XTMA1 Infineon-IPT60R037CM8-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8d2fe47b018d9c7949012a6c
IPT60R037CM8XTMA1
Виробник: Infineon Technologies
Description: IPT60R037CM8XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tj)
Rds On (Max) @ Id, Vgs: 37mOhm @ 27A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 680µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3458 pF @ 400 V
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IPT60R037CM8XTMA1 Infineon-IPT60R037CM8-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8d2fe47b018d9c7949012a6c
IPT60R037CM8XTMA1
Виробник: Infineon Technologies
Description: IPT60R037CM8XTMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tj)
Rds On (Max) @ Id, Vgs: 37mOhm @ 27A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 680µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3458 pF @ 400 V
на замовлення 1466 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+480.67 грн
10+373.36 грн
100+302.03 грн
500+246.99 грн
В кошику  од. на суму  грн.
S25FS256SAGMFI000 Infineon-S25FS128S_S25FS256S_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_MirrorBit(R)_Non-Volatile_Flash-DataSheet-v14_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ed6b5ab5758&utm_source=cypress&utm_medium=referral&utm_campaign
S25FS256SAGMFI000
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
на замовлення 1200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+300.02 грн
10+268.91 грн
25+260.86 грн
50+239.10 грн
240+226.20 грн
480+224.55 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
S25FS256SAGBHI203 Infineon-S25FS128S_S25FS256S_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_MirrorBit(R)_Non-Volatile_Flash-DataSheet-v14_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ed6b5ab5758&utm_source=cypress&utm_medium=referral&utm_campaign
S25FS256SAGBHI203
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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S25FS256SAGBHI203 Infineon-S25FS128S_S25FS256S_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_MirrorBit(R)_Non-Volatile_Flash-DataSheet-v14_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ed6b5ab5758&utm_source=cypress&utm_medium=referral&utm_campaign
S25FS256SAGBHI203
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Cut Tape (CT)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
на замовлення 2394 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+411.43 грн
10+351.82 грн
25+335.47 грн
50+303.69 грн
100+292.95 грн
250+279.33 грн
500+265.02 грн
1000+255.62 грн
В кошику  од. на суму  грн.
S25FS256SAGNFI003 Infineon-S25FS128S_S25FS256S_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_MirrorBit(R)_Non-Volatile_Flash-DataSheet-v14_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ed6b5ab5758&utm_source=cypress&utm_medium=referral&utm_campaign
S25FS256SAGNFI003
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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S25FS256SAGNFI003 Infineon-S25FS128S_S25FS256S_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_MirrorBit(R)_Non-Volatile_Flash-DataSheet-v14_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ed6b5ab5758&utm_source=cypress&utm_medium=referral&utm_campaign
S25FS256SAGNFI003
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 8WSON
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
на замовлення 1662 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+411.43 грн
10+351.82 грн
25+335.47 грн
50+303.69 грн
100+292.95 грн
250+279.33 грн
500+265.02 грн
1000+255.62 грн
В кошику  од. на суму  грн.
IR2235PBF IRSDS12168-1.pdf?t.download=true&u=5oefqw
IR2235PBF
Виробник: Infineon Technologies
Description: IR2235 - GATE DRIVER
Packaging: Bulk
DigiKey Programmable: Not Verified
на замовлення 470 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
15+1493.47 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
IR2235PBF IRSDS12168-1.pdf?t.download=true&u=5oefqw
IR2235PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: 28-PDIP
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
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S29GL128P90FFIR22 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref
S29GL128P90FFIR22
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
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S29GL128P90FFIR22 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref
S29GL128P90FFIR22
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Cut Tape (CT)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
на замовлення 348 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+470.32 грн
10+421.48 грн
25+408.70 грн
50+374.52 грн
100+365.49 грн
В кошику  од. на суму  грн.
CY9BF406NAPMC-G-UNE2
CY9BF406NAPMC-G-UNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 80
DigiKey Programmable: Not Verified
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KITXMC142GOTOBO1 Infineon-KIT_XMC14_2GO-UserManual-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801915a63408673fe
KITXMC142GOTOBO1
Виробник: Infineon Technologies
Description: KIT_XMC14_2GO
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M0
Utilized IC / Part: XMC1400
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CY7C1441KVE33-133AXI Infineon-CY7C1441KV33_CY7C1443KV33_CY7C1441KVE33_36-Mbit_(1_M_36_2_M_18)_Flow-Through_SRAM_(With_ECC)-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecf21fc4994
CY7C1441KVE33-133AXI
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Standard
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
товару немає в наявності
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CY7C1041GN30-10BVJXIT Infineon-CY7C1041GN_4-Mbit_(256K_words_16_bit)_Static_RAM-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed82ae859a5&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1041GN30-10BVJXIT
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 48VFBGA
Packaging: Cut Tape (CT)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+558.66 грн
10+477.43 грн
25+455.30 грн
50+412.17 грн
100+397.60 грн
250+379.10 грн
500+359.66 грн
1000+346.90 грн
В кошику  од. на суму  грн.
CY7C1011DV33-10ZSXI description download
CY7C1011DV33-10ZSXI
Виробник: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
на замовлення 358 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+374.83 грн
10+320.25 грн
25+305.37 грн
40+279.67 грн
135+262.56 грн
270+253.27 грн
В кошику  од. на суму  грн.
CY7C1019CV33-12ZXC CY7C1019CV33%20RevG.pdf
CY7C1019CV33-12ZXC
Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32TSOP II
Packaging: Tray
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CY7C1019CV33-15ZXI CY7C1019CV33%20RevG.pdf
CY7C1019CV33-15ZXI
Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32TSOP II
Packaging: Tray
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CY7C1019B-12VC CY7C1019%2C10191B.pdf
CY7C1019B-12VC
Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Tube
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
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CY7C1019D-10ZSXI Infineon-CY7C1019D_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf2577333a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1019D-10ZSXI
Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32TSOP II
Packaging: Tray
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
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CY7C1019DV33-10ZSXI description download
CY7C1019DV33-10ZSXI
Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32TSOP II
Packaging: Tray
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CY7C1019CV33-10ZXA 5047
CY7C1019CV33-10ZXA
Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32TSOP II
Packaging: Tray
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CY7C1049G-10ZSXI Infineon-CY7C1049G_and_CY7C1049GE_are_high-performance_CMOS_fast_static_RAM_devices_with_embedded_ECC-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7e2c15966&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
CY7C1049G-10ZSXI
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY7C1049G18-15ZSXI Infineon-CY7C1049G_and_CY7C1049GE_are_high-performance_CMOS_fast_static_RAM_devices_with_embedded_ECC-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7e2c15966&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
CY7C1049G18-15ZSXI
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY7C1049BV33-15VC CY7C1049BV33.pdf
CY7C1049BV33-15VC
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT 15NS 36SOJ
Packaging: Tube
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
на замовлення 151 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
31+736.74 грн
Мінімальне замовлення: 31
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CY7C1049CV33-15VC CY7C1049CV33.pdf
CY7C1049CV33-15VC
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 36SOJ
Packaging: Tube
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY7C1049CV33-15VXC
CY7C1049CV33-15VXC
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 36SOJ
Packaging: Tube
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY7C1049G18-15ZSXIT Infineon-CY7C1049G_and_CY7C1049GE_are_high-performance_CMOS_fast_static_RAM_devices_with_embedded_ECC-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7e2c15966&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
CY7C1049G18-15ZSXIT
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY7C1049B-15VXC CY7C1049B%20RevB.pdf
CY7C1049B-15VXC
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 36SOJ
Packaging: Tube
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY7C1049G-10ZSXIT Infineon-CY7C1049G_and_CY7C1049GE_are_high-performance_CMOS_fast_static_RAM_devices_with_embedded_ECC-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7e2c15966&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
CY7C1049G-10ZSXIT
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY7C1049GE30-10ZSXIT Infineon-CY7C1049G_and_CY7C1049GE_are_high-performance_CMOS_fast_static_RAM_devices_with_embedded_ECC-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7e2c15966&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
CY7C1049GE30-10ZSXIT
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY7C1049BL-17VC CY7C1049B.pdf
CY7C1049BL-17VC
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 36SOJ
Packaging: Tube
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Write Cycle Time - Word, Page: 17ns
Memory Interface: Parallel
Access Time: 17 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY7C1049BNL-17VC CY7C1049BN.pdf
CY7C1049BNL-17VC
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 36SOJ
Packaging: Bag
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Write Cycle Time - Word, Page: 17ns
Memory Interface: Parallel
Access Time: 17 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY7C1049B-15VC CY7C1049B.pdf
CY7C1049B-15VC
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 36SOJ
Packaging: Tube
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY7C1049B-20VC CY7C1049B.pdf
CY7C1049B-20VC
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 36SOJ
Packaging: Tube
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY7C1049BL-25VC CY7C1049B.pdf
CY7C1049BL-25VC
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 36SOJ
Packaging: Tube
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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IR3623MTRPBF IR3623MPbF.pdf
IR3623MTRPBF
Виробник: Infineon Technologies
Description: IC REG CTRLR BUCK 32MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Output Type: PWM Signal
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 1.2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 8.5V ~ 14.5V
Supplier Device Package: 32-MLPQ (5x5)
Control Features: Current Limit, Enable, Frequency Control, Power Good, Sequencing, Soft Start, Tracking
Output Phases: 2
Duty Cycle (Max): 85%
Clock Sync: Yes
Number of Outputs: 2
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CY90F867EPMC-G-90XX-SPE1
CY90F867EPMC-G-90XX-SPE1
Виробник: Infineon Technologies
Description: IC MCU 16BIT 128KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 24x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SCI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 80
DigiKey Programmable: Not Verified
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CY90F867EPMC-G-9022-SPE1
CY90F867EPMC-G-9022-SPE1
Виробник: Infineon Technologies
Description: IC MCU 16BIT 128KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 24x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SCI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 80
DigiKey Programmable: Not Verified
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CYTVII-B-H-8M-320-CPU Infineon-Traveo_II_CYTVII-B-H-8M-320-CPU-UserManual-v01_00-EN.pdf?fileId=5546d46275b79adb0175f49e612208c2
CYTVII-B-H-8M-320-CPU
Виробник: Infineon Technologies
Description: THE CYTVII-B-H-8M-320-CPU, A 320
Packaging: Bulk
Mounting Type: Socket
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M7
Utilized IC / Part: CYT4BF
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+57806.82 грн
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CY7C68300C-56PVXC description download
CY7C68300C-56PVXC
Виробник: Infineon Technologies
Description: IC USB 2.0 BRIDGE AT2LP 56-SSOP
Packaging: Tube
Package / Case: 56-BSSOP (0.295", 7.50mm Width)
Function: Bridge, USB to ATA
Interface: ATA
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.15V ~ 3.45V
Current - Supply: 50mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 56-SSOP
DigiKey Programmable: Not Verified
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CY7C68300C-56LTXC download
CY7C68300C-56LTXC
Виробник: Infineon Technologies
Description: IC USB 2.0 BRIDGE AT2LP 56VQFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Function: Bridge, USB to ATA
Interface: ATA
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.15V ~ 3.45V
Current - Supply: 50mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 56-QFN (8x8)
DigiKey Programmable: Not Verified
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CY7C68320C-100AXC download
CY7C68320C-100AXC
Виробник: Infineon Technologies
Description: IC USB 2.0 BRIDGE AT2LP 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Function: Bridge, USB to ATA
Interface: ATA
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Current - Supply: 50mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 100-TQFP (14x20)
DigiKey Programmable: Not Verified
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IRS21064PBF INFN-S-A0002363322-1.pdf?t.download=true&u=5oefqw
IRS21064PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 14DIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
116+197.31 грн
Мінімальне замовлення: 116
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IRS21064PBF INFN-S-A0002363322-1.pdf?t.download=true&u=5oefqw
IRS21064PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
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IDWD140E120D7XKSA1 IDWD140E120D7_Rev1.00_12-15-23.pdf
IDWD140E120D7XKSA1
Виробник: Infineon Technologies
Description: DIODE GEN PURP 1200V 207A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 5A (Io)
Reverse Recovery Time (trr): 225 ns
Technology: Standard
Current - Average Rectified (Io): 207A
Supplier Device Package: PG-TO247-2-2
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 140 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
на замовлення 209 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+478.28 грн
10+354.35 грн
25+327.75 грн
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CY8C4024LQSS411UXQLA1 Infineon-Automotive_PSoC_4_PSoC_4000S_Family_Datasheet_Programmable_System-on-Chip_PSoC-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee641716e5b
Виробник: Infineon Technologies
Description: IC MCU
Packaging: Tray
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