| Фото | Назва | Виробник | Інформація |
Доступність |
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| MIXG240RF1200P-PC | IXYS |
 Description: IGBT MODULE MIXG240RF1200PTED-PCPackaging: Box |
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| MIXG360RF1200P-PC | IXYS |
Description: IGBT MODULE MIXG360RF1200PTED-PC Packaging: Box |
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| W2899MC480 | IXYS |
Description: DIODE GEN PURP 4.8KV 2899A W54 Packaging: Box Package / Case: DO-200AC, K-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 48 µs Technology: Standard Current - Average Rectified (Io): 2899A Supplier Device Package: W54 Operating Temperature - Junction: -40°C ~ 160°C Voltage - DC Reverse (Vr) (Max): 4800 V Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 8600 A Current - Reverse Leakage @ Vr: 50 mA @ 4800 V |
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IXTA1R4N100PTRL | IXYS |
Description: MOSFET N-CH 1000V 1.4A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Rds On (Max) @ Id, Vgs: 11.8Ohm @ 700mA, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V |
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| W3082MC420 | IXYS |
Description: DIODE GEN PURP 4.2KV 3120A W54 Packaging: Box Package / Case: DO-200AC, K-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 µs Technology: Standard Current - Average Rectified (Io): 3120A Supplier Device Package: W54 Operating Temperature - Junction: -40°C ~ 160°C Voltage - DC Reverse (Vr) (Max): 4200 V Voltage - Forward (Vf) (Max) @ If: 2.58 V @ 8600 A Current - Reverse Leakage @ Vr: 50 mA @ 4200 V |
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| W3082MC450 | IXYS |
Description: DIODE GEN PURP 4.5KV 3120A W54 Packaging: Box Package / Case: DO-200AC, K-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 µs Technology: Standard Current - Average Rectified (Io): 3120A Supplier Device Package: W54 Operating Temperature - Junction: -40°C ~ 160°C Voltage - DC Reverse (Vr) (Max): 4500 V Voltage - Forward (Vf) (Max) @ If: 2.58 V @ 8600 A Current - Reverse Leakage @ Vr: 50 mA @ 4500 V |
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IXGA12N120A3-TRL | IXYS |
Description: IXGA12N120A3 TRL Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A Supplier Device Package: TO-263 (D2Pak) IGBT Type: PT Td (on/off) @ 25°C: 35ns/62ns Test Condition: 960V, 12A, 10Ohm, 15V Gate Charge: 20.4 nC Current - Collector (Ic) (Max): 22 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 60 A Power - Max: 100 W |
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| IXXH140N65B4 | IXYS |
Description: DISC IGBT XPT-GENX4 TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 105 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 120A Supplier Device Package: TO-247 (IXTH) IGBT Type: PT Td (on/off) @ 25°C: 54ns/270ns Switching Energy: 5.75mJ (on), 2.67mJ (off) Test Condition: 400V, 100A, 4.7Ohm, 15V Gate Charge: 250 nC Current - Collector (Ic) (Max): 340 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 840 A Power - Max: 1200 W |
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| IXXH140N65C4 | IXYS |
Description: DISC IGBT XPT-GENX4 TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 90 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 120A Supplier Device Package: TO-247 (IXTH) IGBT Type: PT Td (on/off) @ 25°C: 43ns/240ns Switching Energy: 4.9mJ (on), 1.7mJ (off) Test Condition: 400V, 75A, 4.7Ohm, 15V Gate Charge: 250 nC Current - Collector (Ic) (Max): 320 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 730 A Power - Max: 1200 W |
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| IXXX140N65B4H1 | IXYS |
Description: IGBT Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 105 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 120A Supplier Device Package: PLUS247™-3 Td (on/off) @ 25°C: 54ns/270ns Switching Energy: 5.75mJ (on), 2.67mJ (off) Test Condition: 400V, 100A, 4.7Ohm, 15V Gate Charge: 250 nC Current - Collector (Ic) (Max): 340 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 840 A Power - Max: 1200 W |
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| N3229QK040 | IXYS |
Description: SCR 400V 6305A WP2 Packaging: Box Package / Case: TO-200AB, B-PuK Mounting Type: Chassis Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 140°C Current - Hold (Ih) (Max): 1 A Current - Gate Trigger (Igt) (Max): 300 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 30800A @ 50Hz Current - On State (It (AV)) (Max): 3229 A Voltage - Gate Trigger (Vgt) (Max): 3 V Voltage - On State (Vtm) (Max): 1.57 V Current - Off State (Max): 100 mA Supplier Device Package: WP2 Current - On State (It (RMS)) (Max): 6305 A Voltage - Off State: 400 V |
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| IXTY2P50PA | IXYS |
Description: AUTOMOTIVE GRADE POLARPTM P-CHAN Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 4.2Ohm @ 500mA, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: TO-252 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V Qualification: AEC-Q101 |
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DFE250X600NA | IXYS |
Description: DIODE MOD GP 600V 125A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 125A Supplier Device Package: SOT-227B Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 125 A Current - Reverse Leakage @ Vr: 3 mA @ 600 V |
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DHG100X650NA | IXYS |
Description: DIODE MOD GP 600V 125A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 125A Supplier Device Package: SOT-227B Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 125 A Current - Reverse Leakage @ Vr: 3 mA @ 600 V |
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| MTC120W55GC-SMD | IXYS |
Description: MOSFET 6N-CH 55V 150A Packaging: Tube Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6970pF @ 25V Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Vgs(th) (Max) @ Id: 4V @ 1mA |
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| W4693QK050 | IXYS |
Description: DIODE GEN PURP 500V 4693A WD2 Packaging: Box Package / Case: DO-200AB, B-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 15.5 µs Technology: Standard Current - Average Rectified (Io): 4693A Supplier Device Package: WD2 Operating Temperature - Junction: -40°C ~ 180°C Voltage - DC Reverse (Vr) (Max): 500 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3000 A Current - Reverse Leakage @ Vr: 50 mA @ 500 V |
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| W4693QK080 | IXYS |
Description: DIODE GEN PURP 800V 4693A WD2 Packaging: Box Package / Case: DO-200AB, B-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 15.5 µs Technology: Standard Current - Average Rectified (Io): 4693A Supplier Device Package: WD2 Operating Temperature - Junction: -40°C ~ 180°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3000 A Current - Reverse Leakage @ Vr: 50 mA @ 800 V |
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| MCMA160P1600YA | IXYS |
Description: SCR MODULE 1.6KV 160A MODULE Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 140°C (TJ) Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5130A Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 160 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Current - On State (It (RMS)) (Max): 250 A Voltage - Off State: 1.6 kV |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
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| MCMA160P1800YA-MI | IXYS |
Description: SCR MODULE 1.8KV 160A MODULE Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 140°C (TJ) Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5130A Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 160 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Current - On State (It (RMS)) (Max): 250 A Voltage - Off State: 1.8 kV |
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DSSK10-018A | IXYS |
Description: DIODE ARR SCHOTT 180V 5A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-220-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 180 V Voltage - Forward (Vf) (Max) @ If: 780 mV @ 5 A Current - Reverse Leakage @ Vr: 300 µA @ 180 V |
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| CMA80E1400HB | IXYS |
Description: THYRISTOR - TO247 Packaging: Tube |
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| MTC120WX55GD-SMD | IXYS |
Description: MOSFET 6N-CH 55V 150A Packaging: Tube Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6970pF @ 25V Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Vgs(th) (Max) @ Id: 4V @ 1mA |
на замовлення 156 шт: термін постачання 21-31 дні (днів) |
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IRFP470 | IXYS |
Description: MOSFET N-CH 500V 24A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 12A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AD Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V |
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| IXFP20N60X3 | IXYS |
Description: DISCRETE MOSFET 20A 600V X3 TO22 Packaging: Tube |
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DGSK20-025AS-TUB | IXYS |
Description: DIODE ARR SCHOT 250V 12A TO263AA Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 12A Supplier Device Package: TO-263AA Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 250 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A Current - Reverse Leakage @ Vr: 1.3 mA @ 250 V |
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| IXYH40N120B4H1 | IXYS |
Description: IGBT TRENCH 1200V 112A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 430 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 32A Supplier Device Package: TO-247 (IXTH) IGBT Type: Trench Td (on/off) @ 25°C: 19ns/220ns Switching Energy: 5.9mJ (on), 2.9mJ (off) Test Condition: 960V, 32A, 5Ohm, 15V Gate Charge: 94 nC Current - Collector (Ic) (Max): 112 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 240 A Power - Max: 600 W |
на замовлення 970 шт: термін постачання 21-31 дні (днів) |
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| MDD810-12N2 | IXYS |
Description: DIODE MODULE GP 1200V 807A Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 16.5 µs Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 807A Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.24 V @ 2000 A Current - Reverse Leakage @ Vr: 50 mA @ 1200 V |
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| IXFN140N60X3 | IXYS |
Description: DISCRETE MOSFET 140A 600V X3 SOT Packaging: Tube |
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| IXYN110N120C4H1 | IXYS |
Description: 1200V, 110A, XPT GEN4 C4 CO-PACK Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 110A NTC Thermistor: No Supplier Device Package: SOT-227B IGBT Type: Trench Current - Collector (Ic) (Max): 210 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 830 W Current - Collector Cutoff (Max): 50 µA Input Capacitance (Cies) @ Vce: 5420 pF @ 25 V |
на замовлення 290 шт: термін постачання 21-31 дні (днів) |
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| IXYN110N120B4H1 | IXYS |
Description: 1200V,110A, XPT GEN4 B4 CO-PACK Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A NTC Thermistor: No Supplier Device Package: SOT-227B IGBT Type: Trench Current - Collector (Ic) (Max): 218 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 830 W Current - Collector Cutoff (Max): 50 µA Input Capacitance (Cies) @ Vce: 5460 pF @ 25 V |
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| IXYK85N120C4H1 | IXYS |
Description: IGBT TRENCH 1200V 220A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 265 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 85A Supplier Device Package: SOT-227B IGBT Type: Trench Td (on/off) @ 25°C: 35ns/280ns Switching Energy: 4.3mJ (on), 2mJ (off) Test Condition: 600V, 50A, 5Ohm, 15V Gate Charge: 192 nC Current - Collector (Ic) (Max): 220 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 420 A Power - Max: 1150 W |
на замовлення 294 шт: термін постачання 21-31 дні (днів) |
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| IXYN85N120C4H1 | IXYS |
Description: 1200V, 85A, XPT GEN4 C4 CO-PACK Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 85A NTC Thermistor: No Supplier Device Package: SOT-227B IGBT Type: Trench Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 600 W Current - Collector Cutoff (Max): 50 µA Input Capacitance (Cies) @ Vce: 4030 pF @ 25 V |
на замовлення 299 шт: термін постачання 21-31 дні (днів) |
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| MXB12R600DPHFC | IXYS |
Description: MOSFET N-CH 600V 15A Packaging: Tube Package / Case: ISOPLUSi5-Pak™ Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Supplier Device Package: ISOPLUS i4-PAC™ Drain to Source Voltage (Vdss): 650 V |
на замовлення 249 шт: термін постачання 21-31 дні (днів) |
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MCNA40P2200TA | IXYS |
Description: BIPOLAR MODULE - THYRISTOR TO-2 Packaging: Box Package / Case: TO-240AA Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 140°C (TJ) Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 100 mA Current - Gate Trigger (Igt) (Max): 70 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 500A, 540A Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 40 A Voltage - Gate Trigger (Vgt) (Max): 1.4 V Current - On State (It (RMS)) (Max): 63 A Voltage - Off State: 2.2 kV |
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MCNA55P2200TA | IXYS |
Description: BIPOLAR MODULE - THYRISTOR TO-2 Packaging: Box Package / Case: TO-240AA Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 140°C (TJ) Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 95 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1000A, 1080A Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 55 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Current - On State (It (RMS)) (Max): 86 A Voltage - Off State: 2.2 kV |
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MCNA75P2200TA | IXYS |
Description: BIPOLAR MODULE - THYRISTOR TO-2 Packaging: Box Package / Case: TO-240AA Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 140°C (TJ) Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 95 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1400A, 1510A Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 75 A Voltage - Gate Trigger (Vgt) (Max): 1.4 V Current - On State (It (RMS)) (Max): 118 A Voltage - Off State: 2.2 kV |
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MCNA95P2200TA | IXYS |
Description: BIPOLAR MODULE - THYRISTOR TO-2 Packaging: Box Package / Case: TO-240AA Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 140°C (TJ) Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1700A, 1840A Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 95 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Current - On State (It (RMS)) (Max): 149 A Voltage - Off State: 2.2 kV |
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| IXFR140N60X3 | IXYS |
Description: DISCRETE MOSFET 140A 600V X3 ISO Packaging: Tube |
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| IXFH18N65X3 | IXYS |
Description: DISCRETE MOSFET 18A 650V X3 TO24 Packaging: Tube |
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IXTA230N04T4 | IXYS |
Description: MOSFET N-CH 40V 230A TO263AA Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 230A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 115A, 10V Power Dissipation (Max): 340W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V |
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IXTA10P50P-TRL | IXYS |
Description: MOSFET P-CH 500V 10A TO263 Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V |
на замовлення 53600 шт: термін постачання 21-31 дні (днів) |
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IXTA10P50P-TRL | IXYS |
Description: MOSFET P-CH 500V 10A TO263 Packaging: Cut Tape (CT) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V |
на замовлення 54523 шт: термін постачання 21-31 дні (днів) |
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MDD56-14N1B | IXYS |
Description: DIODE MOD GP 1.4KV 95A TO240AA Packaging: Box Package / Case: TO-240AA Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 95A Supplier Device Package: TO-240AA Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1400 V Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 200 A Current - Reverse Leakage @ Vr: 10 mA @ 1400 V |
на замовлення 132 шт: термін постачання 21-31 дні (днів) |
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MDD56-08N1B | IXYS |
Description: DIODE MODULE GP 800V 95A TO240AA Packaging: Box Package / Case: TO-240AA Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 95A Supplier Device Package: TO-240AA Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 200 A Current - Reverse Leakage @ Vr: 10 mA @ 800 V |
на замовлення 7 шт: термін постачання 21-31 дні (днів) |
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IXTA140N12T2 | IXYS |
Description: MOSFET N-CH 120V 140A TO263 Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V Power Dissipation (Max): 577W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 174 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 25 V |
на замовлення 1400 шт: термін постачання 21-31 дні (днів) |
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| IXYT12N250CV1HV | IXYS |
Description: DISC IGBT XPT-HI VOLTAGE TO-268A Packaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 16 ns Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A Supplier Device Package: TO-268HV (IXYT) Td (on/off) @ 25°C: 12ns/167ns Switching Energy: 3.56mJ (on), 1.7mJ (off) Test Condition: 1250V, 12A, 10Ohm, 15V Gate Charge: 56 nC Current - Collector (Ic) (Max): 28 A Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector Pulsed (Icm): 80 A Power - Max: 310 W |
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IXYA12N250CHV | IXYS |
Description: DISC IGBT XPT-HI VOLTAGE TO-263D Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 16 ns Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A Supplier Device Package: TO-263HV Td (on/off) @ 25°C: 12ns/167ns Switching Energy: 3.56mJ (on), 1.7mJ (off) Test Condition: 1250V, 12A, 10Ohm, 15V Gate Charge: 56 nC Current - Collector (Ic) (Max): 28 A Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector Pulsed (Icm): 80 A Power - Max: 310 W |
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W2865HA680 | IXYS |
Description: DIODE GEN PURP 6.8KV 4825A W121 Packaging: Box Package / Case: DO-200AD Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 53 µs Technology: Standard Current - Average Rectified (Io): 4825A Supplier Device Package: W121 Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 6800 V Voltage - Forward (Vf) (Max) @ If: 4.04 V @ 10000 A Current - Reverse Leakage @ Vr: 100 mA @ 6800 V |
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W2865HA720 | IXYS |
Description: DIODE GEN PURP 7200V 4825A W121 Packaging: Box Package / Case: DO-200AD Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 53 µs Technology: Standard Current - Average Rectified (Io): 4825A Supplier Device Package: W121 Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 7200 V Voltage - Forward (Vf) (Max) @ If: 4.04 V @ 10000 A Current - Reverse Leakage @ Vr: 100 mA @ 7200 V |
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IXFA6N120P-TRL | IXYS |
Description: MOSFET N-CH 1200V 6A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 500mA, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-263AA (IXFA) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 25 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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QV6012NH4RP | IXYS |
Description: TRIAC SENS GATE 600V 12A TO263 Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Current - Hold (Ih) (Max): 50 mA Current - Gate Trigger (Igt) (Max): 35 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A Voltage - Gate Trigger (Vgt) (Max): 1.2 V Supplier Device Package: TO-263 (D2Pak) Current - On State (It (RMS)) (Max): 12 A Voltage - Off State: 600 V |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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QV6012NH4RP | IXYS |
Description: TRIAC SENS GATE 600V 12A TO263 Packaging: Cut Tape (CT) Mounting Type: Surface Mount Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Current - Hold (Ih) (Max): 50 mA Current - Gate Trigger (Igt) (Max): 35 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A Voltage - Gate Trigger (Vgt) (Max): 1.2 V Supplier Device Package: TO-263 (D2Pak) Current - On State (It (RMS)) (Max): 12 A Voltage - Off State: 600 V |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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QV6012NH5RP | IXYS |
Description: TRIAC SENS GATE 600V 12A TO263 Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Current - Hold (Ih) (Max): 50 mA Current - Gate Trigger (Igt) (Max): 50 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A Voltage - Gate Trigger (Vgt) (Max): 1.2 V Supplier Device Package: TO-263 (D2Pak) Current - On State (It (RMS)) (Max): 12 A Voltage - Off State: 600 V |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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QV6012NH5RP | IXYS |
Description: TRIAC SENS GATE 600V 12A TO263 Packaging: Cut Tape (CT) Mounting Type: Surface Mount Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Current - Hold (Ih) (Max): 50 mA Current - Gate Trigger (Igt) (Max): 50 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A Voltage - Gate Trigger (Vgt) (Max): 1.2 V Supplier Device Package: TO-263 (D2Pak) Current - On State (It (RMS)) (Max): 12 A Voltage - Off State: 600 V |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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QV6012RH5TP | IXYS |
Description: TRIAC SENS GATE 600V 12A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Current - Hold (Ih) (Max): 50 mA Current - Gate Trigger (Igt) (Max): 50 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A Voltage - Gate Trigger (Vgt) (Max): 1.2 V Supplier Device Package: TO-220 Current - On State (It (RMS)) (Max): 12 A Voltage - Off State: 600 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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IXTA10P15T-TRL | IXYS |
Description: MOSFET P-CH 150V 10A TO263 Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 5A, 10V Power Dissipation (Max): 83W (Ta) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V |
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IXTA10P15T | IXYS |
Description: MOSFET P-CH 150V 10A TO263 Packaging: Tube Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 5A, 10V Power Dissipation (Max): 83W (Ta) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V |
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CLA15E1200NPZ-TUB | IXYS |
Description: SCR 1.2KV 33A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 150°C (TJ) Current - Hold (Ih) (Max): 70 mA Current - Gate Trigger (Igt) (Max): 20 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 170A, 185A Current - On State (It (AV)) (Max): 15 A Voltage - Gate Trigger (Vgt) (Max): 1.3 V Voltage - On State (Vtm) (Max): 1.35 V Supplier Device Package: TO-263HV Current - On State (It (RMS)) (Max): 33 A Voltage - Off State: 1.2 kV |
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CLA15E1200NPZ-TRL | IXYS |
Description: SCR 1.2KV 33A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 150°C (TJ) Current - Hold (Ih) (Max): 70 mA Current - Gate Trigger (Igt) (Max): 20 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 170A, 185A Current - On State (It (AV)) (Max): 15 A Voltage - Gate Trigger (Vgt) (Max): 1.3 V Voltage - On State (Vtm) (Max): 1.35 V Supplier Device Package: TO-263HV Current - On State (It (RMS)) (Max): 33 A Voltage - Off State: 1.2 kV |
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| IXKH47N60CC3 | IXYS |
Description: MOSFET N-CH 600V 47A TO247AD Packaging: Bulk |
товар відсутній |
| MIXG240RF1200P-PC |
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товар відсутній
| MIXG360RF1200P-PC |
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товар відсутній
| W2899MC480 |
Виробник: IXYS
Description: DIODE GEN PURP 4.8KV 2899A W54
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 48 µs
Technology: Standard
Current - Average Rectified (Io): 2899A
Supplier Device Package: W54
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 4800 V
Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 8600 A
Current - Reverse Leakage @ Vr: 50 mA @ 4800 V
Description: DIODE GEN PURP 4.8KV 2899A W54
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 48 µs
Technology: Standard
Current - Average Rectified (Io): 2899A
Supplier Device Package: W54
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 4800 V
Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 8600 A
Current - Reverse Leakage @ Vr: 50 mA @ 4800 V
товар відсутній
| IXTA1R4N100PTRL |
Виробник: IXYS
Description: MOSFET N-CH 1000V 1.4A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 11.8Ohm @ 700mA, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Description: MOSFET N-CH 1000V 1.4A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 11.8Ohm @ 700mA, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
товар відсутній
| W3082MC420 |
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Виробник: IXYS
Description: DIODE GEN PURP 4.2KV 3120A W54
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 µs
Technology: Standard
Current - Average Rectified (Io): 3120A
Supplier Device Package: W54
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 4200 V
Voltage - Forward (Vf) (Max) @ If: 2.58 V @ 8600 A
Current - Reverse Leakage @ Vr: 50 mA @ 4200 V
Description: DIODE GEN PURP 4.2KV 3120A W54
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 µs
Technology: Standard
Current - Average Rectified (Io): 3120A
Supplier Device Package: W54
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 4200 V
Voltage - Forward (Vf) (Max) @ If: 2.58 V @ 8600 A
Current - Reverse Leakage @ Vr: 50 mA @ 4200 V
товар відсутній
| W3082MC450 |
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Виробник: IXYS
Description: DIODE GEN PURP 4.5KV 3120A W54
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 µs
Technology: Standard
Current - Average Rectified (Io): 3120A
Supplier Device Package: W54
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 2.58 V @ 8600 A
Current - Reverse Leakage @ Vr: 50 mA @ 4500 V
Description: DIODE GEN PURP 4.5KV 3120A W54
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 µs
Technology: Standard
Current - Average Rectified (Io): 3120A
Supplier Device Package: W54
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 2.58 V @ 8600 A
Current - Reverse Leakage @ Vr: 50 mA @ 4500 V
товар відсутній
| IXGA12N120A3-TRL |
Виробник: IXYS
Description: IXGA12N120A3 TRL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 35ns/62ns
Test Condition: 960V, 12A, 10Ohm, 15V
Gate Charge: 20.4 nC
Current - Collector (Ic) (Max): 22 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 100 W
Description: IXGA12N120A3 TRL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 35ns/62ns
Test Condition: 960V, 12A, 10Ohm, 15V
Gate Charge: 20.4 nC
Current - Collector (Ic) (Max): 22 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 100 W
товар відсутній
| IXXH140N65B4 |
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Виробник: IXYS
Description: DISC IGBT XPT-GENX4 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 105 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 120A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 54ns/270ns
Switching Energy: 5.75mJ (on), 2.67mJ (off)
Test Condition: 400V, 100A, 4.7Ohm, 15V
Gate Charge: 250 nC
Current - Collector (Ic) (Max): 340 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 840 A
Power - Max: 1200 W
Description: DISC IGBT XPT-GENX4 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 105 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 120A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 54ns/270ns
Switching Energy: 5.75mJ (on), 2.67mJ (off)
Test Condition: 400V, 100A, 4.7Ohm, 15V
Gate Charge: 250 nC
Current - Collector (Ic) (Max): 340 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 840 A
Power - Max: 1200 W
товар відсутній
| IXXH140N65C4 |
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Виробник: IXYS
Description: DISC IGBT XPT-GENX4 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 120A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 43ns/240ns
Switching Energy: 4.9mJ (on), 1.7mJ (off)
Test Condition: 400V, 75A, 4.7Ohm, 15V
Gate Charge: 250 nC
Current - Collector (Ic) (Max): 320 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 730 A
Power - Max: 1200 W
Description: DISC IGBT XPT-GENX4 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 120A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 43ns/240ns
Switching Energy: 4.9mJ (on), 1.7mJ (off)
Test Condition: 400V, 75A, 4.7Ohm, 15V
Gate Charge: 250 nC
Current - Collector (Ic) (Max): 320 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 730 A
Power - Max: 1200 W
товар відсутній
| IXXX140N65B4H1 |
|
Виробник: IXYS
Description: IGBT
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 105 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 120A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 54ns/270ns
Switching Energy: 5.75mJ (on), 2.67mJ (off)
Test Condition: 400V, 100A, 4.7Ohm, 15V
Gate Charge: 250 nC
Current - Collector (Ic) (Max): 340 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 840 A
Power - Max: 1200 W
Description: IGBT
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 105 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 120A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 54ns/270ns
Switching Energy: 5.75mJ (on), 2.67mJ (off)
Test Condition: 400V, 100A, 4.7Ohm, 15V
Gate Charge: 250 nC
Current - Collector (Ic) (Max): 340 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 840 A
Power - Max: 1200 W
товар відсутній
| N3229QK040 |
Виробник: IXYS
Description: SCR 400V 6305A WP2
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 140°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 30800A @ 50Hz
Current - On State (It (AV)) (Max): 3229 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.57 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP2
Current - On State (It (RMS)) (Max): 6305 A
Voltage - Off State: 400 V
Description: SCR 400V 6305A WP2
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 140°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 30800A @ 50Hz
Current - On State (It (AV)) (Max): 3229 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.57 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP2
Current - On State (It (RMS)) (Max): 6305 A
Voltage - Off State: 400 V
товар відсутній
| IXTY2P50PA |
|
Виробник: IXYS
Description: AUTOMOTIVE GRADE POLARPTM P-CHAN
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 500mA, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-252
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Qualification: AEC-Q101
Description: AUTOMOTIVE GRADE POLARPTM P-CHAN
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 500mA, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-252
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
| DFE250X600NA |
Виробник: IXYS
Description: DIODE MOD GP 600V 125A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 125A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 125 A
Current - Reverse Leakage @ Vr: 3 mA @ 600 V
Description: DIODE MOD GP 600V 125A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 125A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 125 A
Current - Reverse Leakage @ Vr: 3 mA @ 600 V
товар відсутній
| DHG100X650NA |
Виробник: IXYS
Description: DIODE MOD GP 600V 125A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 125A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 125 A
Current - Reverse Leakage @ Vr: 3 mA @ 600 V
Description: DIODE MOD GP 600V 125A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 125A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 125 A
Current - Reverse Leakage @ Vr: 3 mA @ 600 V
товар відсутній
| MTC120W55GC-SMD |
|
Виробник: IXYS
Description: MOSFET 6N-CH 55V 150A
Packaging: Tube
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6970pF @ 25V
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Description: MOSFET 6N-CH 55V 150A
Packaging: Tube
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6970pF @ 25V
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
товар відсутній
| W4693QK050 |
|
Виробник: IXYS
Description: DIODE GEN PURP 500V 4693A WD2
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15.5 µs
Technology: Standard
Current - Average Rectified (Io): 4693A
Supplier Device Package: WD2
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3000 A
Current - Reverse Leakage @ Vr: 50 mA @ 500 V
Description: DIODE GEN PURP 500V 4693A WD2
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15.5 µs
Technology: Standard
Current - Average Rectified (Io): 4693A
Supplier Device Package: WD2
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3000 A
Current - Reverse Leakage @ Vr: 50 mA @ 500 V
товар відсутній
| W4693QK080 |
|
Виробник: IXYS
Description: DIODE GEN PURP 800V 4693A WD2
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15.5 µs
Technology: Standard
Current - Average Rectified (Io): 4693A
Supplier Device Package: WD2
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3000 A
Current - Reverse Leakage @ Vr: 50 mA @ 800 V
Description: DIODE GEN PURP 800V 4693A WD2
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15.5 µs
Technology: Standard
Current - Average Rectified (Io): 4693A
Supplier Device Package: WD2
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3000 A
Current - Reverse Leakage @ Vr: 50 mA @ 800 V
товар відсутній
| MCMA160P1600YA |
|
Виробник: IXYS
Description: SCR MODULE 1.6KV 160A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5130A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 160 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 250 A
Voltage - Off State: 1.6 kV
Description: SCR MODULE 1.6KV 160A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5130A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 160 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 250 A
Voltage - Off State: 1.6 kV
на замовлення 6 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4901.56 грн |
| MCMA160P1800YA-MI |
|
Виробник: IXYS
Description: SCR MODULE 1.8KV 160A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5130A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 160 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 250 A
Voltage - Off State: 1.8 kV
Description: SCR MODULE 1.8KV 160A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5130A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 160 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 250 A
Voltage - Off State: 1.8 kV
товар відсутній
| DSSK10-018A |
|
Виробник: IXYS
Description: DIODE ARR SCHOTT 180V 5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 180 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 5 A
Current - Reverse Leakage @ Vr: 300 µA @ 180 V
Description: DIODE ARR SCHOTT 180V 5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 180 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 5 A
Current - Reverse Leakage @ Vr: 300 µA @ 180 V
товар відсутній
| MTC120WX55GD-SMD |
|
Виробник: IXYS
Description: MOSFET 6N-CH 55V 150A
Packaging: Tube
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6970pF @ 25V
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Description: MOSFET 6N-CH 55V 150A
Packaging: Tube
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6970pF @ 25V
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
на замовлення 156 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 1792.13 грн |
| IRFP470 |
|
Виробник: IXYS
Description: MOSFET N-CH 500V 24A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 12A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Description: MOSFET N-CH 500V 24A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 12A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
товар відсутній
| IXFP20N60X3 |
товар відсутній
| DGSK20-025AS-TUB |
|
Виробник: IXYS
Description: DIODE ARR SCHOT 250V 12A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 1.3 mA @ 250 V
Description: DIODE ARR SCHOT 250V 12A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 1.3 mA @ 250 V
товар відсутній
| IXYH40N120B4H1 |
|
Виробник: IXYS
Description: IGBT TRENCH 1200V 112A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 430 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 32A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/220ns
Switching Energy: 5.9mJ (on), 2.9mJ (off)
Test Condition: 960V, 32A, 5Ohm, 15V
Gate Charge: 94 nC
Current - Collector (Ic) (Max): 112 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 600 W
Description: IGBT TRENCH 1200V 112A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 430 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 32A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/220ns
Switching Energy: 5.9mJ (on), 2.9mJ (off)
Test Condition: 960V, 32A, 5Ohm, 15V
Gate Charge: 94 nC
Current - Collector (Ic) (Max): 112 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 600 W
на замовлення 970 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 607.17 грн |
| 30+ | 467.11 грн |
| 120+ | 417.96 грн |
| 510+ | 346.09 грн |
| MDD810-12N2 |
|
Виробник: IXYS
Description: DIODE MODULE GP 1200V 807A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16.5 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 807A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.24 V @ 2000 A
Current - Reverse Leakage @ Vr: 50 mA @ 1200 V
Description: DIODE MODULE GP 1200V 807A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16.5 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 807A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.24 V @ 2000 A
Current - Reverse Leakage @ Vr: 50 mA @ 1200 V
товар відсутній
| IXFN140N60X3 |
товар відсутній
| IXYN110N120C4H1 |
|
Виробник: IXYS
Description: 1200V, 110A, XPT GEN4 C4 CO-PACK
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 110A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: Trench
Current - Collector (Ic) (Max): 210 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 830 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 5420 pF @ 25 V
Description: 1200V, 110A, XPT GEN4 C4 CO-PACK
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 110A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: Trench
Current - Collector (Ic) (Max): 210 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 830 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 5420 pF @ 25 V
на замовлення 290 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2929.85 грн |
| 10+ | 2513.72 грн |
| 100+ | 2206.39 грн |
| IXYN110N120B4H1 |
|
Виробник: IXYS
Description: 1200V,110A, XPT GEN4 B4 CO-PACK
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: Trench
Current - Collector (Ic) (Max): 218 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 830 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 5460 pF @ 25 V
Description: 1200V,110A, XPT GEN4 B4 CO-PACK
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: Trench
Current - Collector (Ic) (Max): 218 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 830 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 5460 pF @ 25 V
товар відсутній
| IXYK85N120C4H1 |
|
Виробник: IXYS
Description: IGBT TRENCH 1200V 220A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 265 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 85A
Supplier Device Package: SOT-227B
IGBT Type: Trench
Td (on/off) @ 25°C: 35ns/280ns
Switching Energy: 4.3mJ (on), 2mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 192 nC
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 420 A
Power - Max: 1150 W
Description: IGBT TRENCH 1200V 220A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 265 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 85A
Supplier Device Package: SOT-227B
IGBT Type: Trench
Td (on/off) @ 25°C: 35ns/280ns
Switching Energy: 4.3mJ (on), 2mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 192 nC
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 420 A
Power - Max: 1150 W
на замовлення 294 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1516.16 грн |
| 25+ | 1210.35 грн |
| 100+ | 1134.71 грн |
| IXYN85N120C4H1 |
|
Виробник: IXYS
Description: 1200V, 85A, XPT GEN4 C4 CO-PACK
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 85A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: Trench
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 4030 pF @ 25 V
Description: 1200V, 85A, XPT GEN4 C4 CO-PACK
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 85A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: Trench
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 4030 pF @ 25 V
на замовлення 299 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2400.59 грн |
| 10+ | 2054.15 грн |
| 100+ | 1796.63 грн |
| MXB12R600DPHFC |
Виробник: IXYS
Description: MOSFET N-CH 600V 15A
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Supplier Device Package: ISOPLUS i4-PAC™
Drain to Source Voltage (Vdss): 650 V
Description: MOSFET N-CH 600V 15A
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Supplier Device Package: ISOPLUS i4-PAC™
Drain to Source Voltage (Vdss): 650 V
на замовлення 249 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 771.42 грн |
| 10+ | 636.59 грн |
| 100+ | 530.48 грн |
| MCNA40P2200TA |
|
Виробник: IXYS
Description: BIPOLAR MODULE - THYRISTOR TO-2
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 70 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 500A, 540A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 40 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 63 A
Voltage - Off State: 2.2 kV
Description: BIPOLAR MODULE - THYRISTOR TO-2
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 70 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 500A, 540A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 40 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 63 A
Voltage - Off State: 2.2 kV
товар відсутній
| MCNA55P2200TA |
|
Виробник: IXYS
Description: BIPOLAR MODULE - THYRISTOR TO-2
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1000A, 1080A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 55 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 86 A
Voltage - Off State: 2.2 kV
Description: BIPOLAR MODULE - THYRISTOR TO-2
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1000A, 1080A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 55 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 86 A
Voltage - Off State: 2.2 kV
товар відсутній
| MCNA75P2200TA |
|
Виробник: IXYS
Description: BIPOLAR MODULE - THYRISTOR TO-2
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1400A, 1510A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 75 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 118 A
Voltage - Off State: 2.2 kV
Description: BIPOLAR MODULE - THYRISTOR TO-2
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1400A, 1510A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 75 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 118 A
Voltage - Off State: 2.2 kV
товар відсутній
| MCNA95P2200TA |
|
Виробник: IXYS
Description: BIPOLAR MODULE - THYRISTOR TO-2
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1700A, 1840A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 95 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 149 A
Voltage - Off State: 2.2 kV
Description: BIPOLAR MODULE - THYRISTOR TO-2
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1700A, 1840A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 95 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 149 A
Voltage - Off State: 2.2 kV
товар відсутній
| IXFR140N60X3 |
товар відсутній
| IXFH18N65X3 |
товар відсутній
| IXTA230N04T4 |
|
Виробник: IXYS
Description: MOSFET N-CH 40V 230A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 115A, 10V
Power Dissipation (Max): 340W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
Description: MOSFET N-CH 40V 230A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 115A, 10V
Power Dissipation (Max): 340W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
товар відсутній
| IXTA10P50P-TRL |
|
Виробник: IXYS
Description: MOSFET P-CH 500V 10A TO263
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
Description: MOSFET P-CH 500V 10A TO263
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
на замовлення 53600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 267.05 грн |
| 1600+ | 231.45 грн |
| 2400+ | 216.87 грн |
| IXTA10P50P-TRL |
|
Виробник: IXYS
Description: MOSFET P-CH 500V 10A TO263
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
Description: MOSFET P-CH 500V 10A TO263
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
на замовлення 54523 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 423.96 грн |
| 10+ | 349.73 грн |
| 100+ | 291.45 грн |
| MDD56-14N1B |
|
Виробник: IXYS
Description: DIODE MOD GP 1.4KV 95A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 95A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 200 A
Current - Reverse Leakage @ Vr: 10 mA @ 1400 V
Description: DIODE MOD GP 1.4KV 95A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 95A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 200 A
Current - Reverse Leakage @ Vr: 10 mA @ 1400 V
на замовлення 132 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1960.49 грн |
| 10+ | 1677.05 грн |
| 100+ | 1466.8 грн |
| MDD56-08N1B |
|
Виробник: IXYS
Description: DIODE MODULE GP 800V 95A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 95A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 200 A
Current - Reverse Leakage @ Vr: 10 mA @ 800 V
Description: DIODE MODULE GP 800V 95A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 95A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 200 A
Current - Reverse Leakage @ Vr: 10 mA @ 800 V
на замовлення 7 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1781.49 грн |
| IXTA140N12T2 |
|
Виробник: IXYS
Description: MOSFET N-CH 120V 140A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V
Power Dissipation (Max): 577W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 174 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 25 V
Description: MOSFET N-CH 120V 140A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V
Power Dissipation (Max): 577W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 174 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 25 V
на замовлення 1400 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 337.52 грн |
| IXYT12N250CV1HV |
|
Виробник: IXYS
Description: DISC IGBT XPT-HI VOLTAGE TO-268A
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 16 ns
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A
Supplier Device Package: TO-268HV (IXYT)
Td (on/off) @ 25°C: 12ns/167ns
Switching Energy: 3.56mJ (on), 1.7mJ (off)
Test Condition: 1250V, 12A, 10Ohm, 15V
Gate Charge: 56 nC
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 310 W
Description: DISC IGBT XPT-HI VOLTAGE TO-268A
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 16 ns
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A
Supplier Device Package: TO-268HV (IXYT)
Td (on/off) @ 25°C: 12ns/167ns
Switching Energy: 3.56mJ (on), 1.7mJ (off)
Test Condition: 1250V, 12A, 10Ohm, 15V
Gate Charge: 56 nC
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 310 W
товар відсутній
| IXYA12N250CHV |
|
Виробник: IXYS
Description: DISC IGBT XPT-HI VOLTAGE TO-263D
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 16 ns
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A
Supplier Device Package: TO-263HV
Td (on/off) @ 25°C: 12ns/167ns
Switching Energy: 3.56mJ (on), 1.7mJ (off)
Test Condition: 1250V, 12A, 10Ohm, 15V
Gate Charge: 56 nC
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 310 W
Description: DISC IGBT XPT-HI VOLTAGE TO-263D
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 16 ns
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A
Supplier Device Package: TO-263HV
Td (on/off) @ 25°C: 12ns/167ns
Switching Energy: 3.56mJ (on), 1.7mJ (off)
Test Condition: 1250V, 12A, 10Ohm, 15V
Gate Charge: 56 nC
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 310 W
товар відсутній
| W2865HA680 |
|
Виробник: IXYS
Description: DIODE GEN PURP 6.8KV 4825A W121
Packaging: Box
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 53 µs
Technology: Standard
Current - Average Rectified (Io): 4825A
Supplier Device Package: W121
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 6800 V
Voltage - Forward (Vf) (Max) @ If: 4.04 V @ 10000 A
Current - Reverse Leakage @ Vr: 100 mA @ 6800 V
Description: DIODE GEN PURP 6.8KV 4825A W121
Packaging: Box
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 53 µs
Technology: Standard
Current - Average Rectified (Io): 4825A
Supplier Device Package: W121
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 6800 V
Voltage - Forward (Vf) (Max) @ If: 4.04 V @ 10000 A
Current - Reverse Leakage @ Vr: 100 mA @ 6800 V
товар відсутній
| W2865HA720 |
|
Виробник: IXYS
Description: DIODE GEN PURP 7200V 4825A W121
Packaging: Box
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 53 µs
Technology: Standard
Current - Average Rectified (Io): 4825A
Supplier Device Package: W121
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 7200 V
Voltage - Forward (Vf) (Max) @ If: 4.04 V @ 10000 A
Current - Reverse Leakage @ Vr: 100 mA @ 7200 V
Description: DIODE GEN PURP 7200V 4825A W121
Packaging: Box
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 53 µs
Technology: Standard
Current - Average Rectified (Io): 4825A
Supplier Device Package: W121
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 7200 V
Voltage - Forward (Vf) (Max) @ If: 4.04 V @ 10000 A
Current - Reverse Leakage @ Vr: 100 mA @ 7200 V
товар відсутній
| IXFA6N120P-TRL |
|
Виробник: IXYS
Description: MOSFET N-CH 1200V 6A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 500mA, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263AA (IXFA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 25 V
Description: MOSFET N-CH 1200V 6A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 500mA, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263AA (IXFA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 413.77 грн |
| QV6012NH4RP |
|
Виробник: IXYS
Description: TRIAC SENS GATE 600V 12A TO263
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
Description: TRIAC SENS GATE 600V 12A TO263
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 500+ | 123.72 грн |
| QV6012NH4RP |
|
Виробник: IXYS
Description: TRIAC SENS GATE 600V 12A TO263
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
Description: TRIAC SENS GATE 600V 12A TO263
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 204.96 грн |
| 10+ | 165.67 грн |
| 100+ | 134.03 грн |
| QV6012NH5RP |
|
Виробник: IXYS
Description: TRIAC SENS GATE 600V 12A TO263
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
Description: TRIAC SENS GATE 600V 12A TO263
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 500+ | 124.8 грн |
| QV6012NH5RP |
|
Виробник: IXYS
Description: TRIAC SENS GATE 600V 12A TO263
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
Description: TRIAC SENS GATE 600V 12A TO263
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 206.37 грн |
| 10+ | 167.16 грн |
| 100+ | 135.21 грн |
| QV6012RH5TP |
|
Виробник: IXYS
Description: TRIAC SENS GATE 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-220
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
Description: TRIAC SENS GATE 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-220
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 186.01 грн |
| 10+ | 150.46 грн |
| 100+ | 121.74 грн |
| 500+ | 101.55 грн |
| 1000+ | 86.95 грн |
| IXTA10P15T-TRL |
Виробник: IXYS
Description: MOSFET P-CH 150V 10A TO263
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5A, 10V
Power Dissipation (Max): 83W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
Description: MOSFET P-CH 150V 10A TO263
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5A, 10V
Power Dissipation (Max): 83W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
товар відсутній
| IXTA10P15T |
|
Виробник: IXYS
Description: MOSFET P-CH 150V 10A TO263
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5A, 10V
Power Dissipation (Max): 83W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
Description: MOSFET P-CH 150V 10A TO263
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5A, 10V
Power Dissipation (Max): 83W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
товар відсутній
| CLA15E1200NPZ-TUB |
|
Виробник: IXYS
Description: SCR 1.2KV 33A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 70 mA
Current - Gate Trigger (Igt) (Max): 20 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 170A, 185A
Current - On State (It (AV)) (Max): 15 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.35 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 33 A
Voltage - Off State: 1.2 kV
Description: SCR 1.2KV 33A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 70 mA
Current - Gate Trigger (Igt) (Max): 20 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 170A, 185A
Current - On State (It (AV)) (Max): 15 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.35 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 33 A
Voltage - Off State: 1.2 kV
товар відсутній
| CLA15E1200NPZ-TRL |
|
Виробник: IXYS
Description: SCR 1.2KV 33A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 70 mA
Current - Gate Trigger (Igt) (Max): 20 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 170A, 185A
Current - On State (It (AV)) (Max): 15 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.35 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 33 A
Voltage - Off State: 1.2 kV
Description: SCR 1.2KV 33A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 70 mA
Current - Gate Trigger (Igt) (Max): 20 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 170A, 185A
Current - On State (It (AV)) (Max): 15 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.35 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 33 A
Voltage - Off State: 1.2 kV
товар відсутній