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N7585FE280 IXYS Description: SCR 2.8KV W119
Voltage - Off State: 2.8 kV
Supplier Device Package: W119
Current - On State (It (AV)) (Max): 7535 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 110000A @ 50Hz
SCR Type: Standard Recovery
Mounting Type: Chassis Mount
Package / Case: TO-200AF
Packaging: Box
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IXFH26N50P3 IXFH26N50P3 IXYS littelfuse-discrete-mosfets-ixf-26n50p3-datasheet?assetguid=a8b0d040-1523-4949-9cf7-d162b9eed257 Description: MOSFET N-CH 500V 26A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+777.54 грн
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IXTT26N50P IXTT26N50P IXYS littelfuse-discrete-mosfets-ixt-26n50p-datasheet?assetguid=c3369cfd-a2aa-471a-8124-d6f2d10435ef Description: MOSFET N-CH 500V 26A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
на замовлення 428 шт:
термін постачання 21-31 дні (днів)
1+957.82 грн
30+555.85 грн
60+512.12 грн
120+446.12 грн
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IXTA140N055T2 IXTA140N055T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_140n055t2_datasheet.pdf?assetguid=886c24a8-3d1d-4378-98ef-e3645ff1ea05 Description: MOSFET N-CH 55V 140A TO263
Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Ta)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXTP3N120 IXTP3N120 IXYS littelfuse-discrete-mosfets-ixta3n120-datasheet?assetguid=0f8a2134-6aa0-4538-a4e2-9a575d3790e6 Description: MOSFET N-CH 1200V 3A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 500mA, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
на замовлення 1522 шт:
термін постачання 21-31 дні (днів)
1+812.03 грн
10+541.26 грн
50+438.35 грн
100+380.34 грн
500+326.05 грн
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IXTA3N120-TRL IXTA3N120-TRL IXYS littelfuse-discrete-mosfets-ixta3n120-datasheet?assetguid=0f8a2134-6aa0-4538-a4e2-9a575d3790e6 Description: MOSFET N-CH 1200V 3A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
800+286.02 грн
Мінімальне замовлення: 800 шт
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IXTA3N120-TRL IXTA3N120-TRL IXYS littelfuse-discrete-mosfets-ixta3n120-datasheet?assetguid=0f8a2134-6aa0-4538-a4e2-9a575d3790e6 Description: MOSFET N-CH 1200V 3A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
на замовлення 816 шт:
термін постачання 21-31 дні (днів)
1+634.11 грн
10+418.98 грн
100+337.12 грн
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IXFP3N120 IXFP3N120 IXYS Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFP3N120-Datasheet.PDF?assetguid=5509A502-26A4-4087-805C-A19D2622DD0A Description: MOSFET N-CH 1200V 3A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 500mA, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
на замовлення 322 шт:
термін постачання 21-31 дні (днів)
1+647.43 грн
50+344.27 грн
100+317.42 грн
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IXSJ43N120R1 IXSJ43N120R1 IXYS power-semiconductor-sic-mosfet-ixsj43n120r1-datasheet?assetguid=56a9236f-63b0-443a-9230-5bde5bf364be Description: 1200V 36M (43A @ 25C) SIC MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 1A, 18V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: ISO247-3L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +12V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2453 pF @ 800 V
на замовлення 297 шт:
термін постачання 21-31 дні (днів)
1+1220.40 грн
30+732.27 грн
120+646.27 грн
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IXFA3N120 IXFA3N120 IXYS littelfuse-discrete-mosfets-ixfa3n120-datasheet?assetguid=0b4ef448-6b05-4745-a1a2-8f70be40c9b4 Description: MOSFET N-CH 1200V 3A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-263AA (IXFA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
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IXSJ43N120R1K IXSJ43N120R1K IXYS power-semiconductor-sic-mosfet-ixsj43n120r1k-datasheet?assetguid=2ad383c5-35e4-405b-907e-ffaa794f4761 Description: 1200V 36M (43A @ 25C) SIC MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 20A, 18V
Power Dissipation (Max): 143.7W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: ISO247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2343 pF @ 800 V
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IXFX360N15T2 IXFX360N15T2 IXYS ixf-360n15t2-datasheet?assetguid=1b6ae960-85bd-4900-a0d0-2f0f75011064 Description: MOSFET N-CH 150V 360A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V
Power Dissipation (Max): 1670W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 715 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 47500 pF @ 25 V
на замовлення 1292 шт:
термін постачання 21-31 дні (днів)
1+2049.68 грн
30+1289.22 грн
120+1253.34 грн
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IXFK360N15T2 IXFK360N15T2 IXYS PdfFile325792.pdf Description: MOSFET N-CH 150V 360A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V
Power Dissipation (Max): 1670W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 715 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 47500 pF @ 25 V
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IXTA08N100D2 IXTA08N100D2 IXYS littelfuse-discrete-mosfets-ixt-08n100-datasheet?assetguid=5f3f8653-b9a5-4c21-928a-8f26a664dbdc Description: MOSFET N-CH 1000V 800MA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-263AA
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
на замовлення 5916 шт:
термін постачання 21-31 дні (днів)
1+313.53 грн
50+155.09 грн
100+140.87 грн
500+108.82 грн
1000+101.31 грн
2000+95.00 грн
5000+91.25 грн
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MDMA140P1600TG MDMA140P1600TG IXYS Littelfuse-Power-Semiconductors-MDMA140P1600TG-Datasheet?assetguid=d2fe45b2-4b9c-4c02-a6ee-14fd5db6903f Description: DIODE MOD GP 1600V 140A TO-240AA
Mounting Type: Chassis Mount
Package / Case: TO-240AA
Packaging: Box
Current - Reverse Leakage @ Vr: 200 µA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.18 V @ 140 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-240AA
Current - Average Rectified (Io) (per Diode): 140A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
1+2741.00 грн
В кошику  од. на суму  грн.
MCMA140PD1800TB MCMA140PD1800TB IXYS mcma140pd1800tb-datasheet?assetguid=d1e56417-2b6e-4c8c-8afa-71f17e09d75f Description: Bipolar Module - Thyristor TO-2
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 220 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (AV)) (Max): 140 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 2400A, 2590A
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Hold (Ih) (Max): 200 mA
Structure: Series Connection - SCR/Diode
Operating Temperature: -40°C ~ 140°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-240AA
Packaging: Box
на замовлення 35 шт:
термін постачання 21-31 дні (днів)
1+3636.90 грн
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MCMA140P1600TA-NI MCMA140P1600TA-NI IXYS MCMA140P1600TA.PDF Description: SCR MODULE 1.6KV 220A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2.4kA, 2.59kA
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 140 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 220 A
Voltage - Off State: 1.6 kV
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+3542.84 грн
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MDMA140P1200TG MDMA140P1200TG IXYS Littelfuse-Power-Semiconductors-MDMA140P1200TG-Datasheet?assetguid=f4dbcca0-abd8-4211-a7a0-8e27fab0bfe3 Description: DIODE MOD GP 1200V 140A TO-240AA
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: TO-240AA
Packaging: Box
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.18 V @ 140 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-240AA
Current - Average Rectified (Io) (per Diode): 140A
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MDMA1400C1600CC IXYS MDMA1400C1600CC.pdf Description: DIODE MOD GP 1600V 700A COMPACK
Current - Reverse Leakage @ Vr: 500 µA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 700 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: ComPack
Current - Average Rectified (Io) (per Diode): 700A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
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 Мінімальне замовлення: 3 шт
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MCMA1400E1600CD IXYS Description: SCR MODULE 1.6KV 1700A COMPACK
Packaging: Box
Package / Case: ComPack
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 600 mA
Current - Gate Trigger (Igt) (Max): 600 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 36000A, 38900A
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1100 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 1700 A
Voltage - Off State: 1.6 kV
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 Мінімальне замовлення: 3 шт
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IXTT16N50D2 IXTT16N50D2 IXYS littelfuse-discrete-mosfets-ixt-16n50-datasheet?assetguid=7b3b433a-6881-4eb8-98fb-ae5dc5f054f4 Description: MOSFET N-CH 500V 16A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 8A, 0V
Power Dissipation (Max): 695W (Tc)
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 199 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 25 V
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IXFA16N50P-TRL IXFA16N50P-TRL IXYS littelfuse-discrete-mosfets-ixf-16n50p-datasheet?assetguid=bb00d7c9-0646-4c67-89ce-480fb9520851 Description: MOSFET N-CH 500V 16A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 25 V
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 Мінімальне замовлення: 800 шт
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IXFT100N30X3HV IXFT100N30X3HV IXYS littelfusediscretemosfetsnchannelultrajunctionixf100n30x3hvdatasheetpdf.pdf Description: MOSFET N-CH 300V 100A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 50A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
1+1072.26 грн
30+635.73 грн
120+548.79 грн
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IXFH60N65X2 IXFH60N65X2 IXYS littelfuse-discrete-mosfets-ixfh60n65x2-datasheet?assetguid=05fbbc5b-c245-4dd5-af7b-8fa7f145f7f0 Description: MOSFET N-CH 650V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6180 pF @ 25 V
на замовлення 5069 шт:
термін постачання 21-31 дні (днів)
1+1120.07 грн
30+658.17 грн
60+608.21 грн
120+531.35 грн
510+458.67 грн
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IXTP20N65X2M IXTP20N65X2M IXYS littelfuse-discrete-mosfets-ixtp12n65x2m-datasheet?assetguid=bb457d93-cec3-41b9-97ee-48a3a768170e Description: MOSFET N-CH 650V 20A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 10A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
на замовлення 950 шт:
термін постачання 21-31 дні (днів)
300+224.64 грн
Мінімальне замовлення: 300 шт
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IXFP20N60X3 IXYS Description: DISCRETE MOSFET 20A 600V X3 TO22
Packaging: Tube
товару немає в наявності
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IXTN200N10L2 IXTN200N10L2 IXYS DS100238IXTN200N10L2.pdf Description: MOSFET N-CH 100V 178A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 178A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 540 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
на замовлення 2554 шт:
термін постачання 21-31 дні (днів)
1+4270.22 грн
10+3126.17 грн
50+2799.99 грн
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IXTN60N50L2 IXTN60N50L2 IXYS DS100086AIXTN60N50L2.pdf Description: MOSFET N-CH 500V 53A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V
Power Dissipation (Max): 735W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 610 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V
на замовлення 1679 шт:
термін постачання 21-31 дні (днів)
1+4270.22 грн
10+3247.99 грн
50+3064.14 грн
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IXTN90N25L2 IXTN90N25L2 IXYS littelfuse-discrete-mosfets-ixtn90n25-datasheet?assetguid=22138b57-480b-473e-a2e8-a7af15dabfda Description: MOSFET N-CH 250V 90A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 500mA, 10V
Power Dissipation (Max): 735W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 640 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
на замовлення 344 шт:
термін постачання 21-31 дні (днів)
1+4043.70 грн
10+2964.42 грн
50+2716.02 грн
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IXFN40N90P IXFN40N90P IXYS DS100062AIXFN40N90P.pdf Description: MOSFET N-CH 900V 33A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 20A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V
на замовлення 554 шт:
термін постачання 21-31 дні (днів)
1+2799.00 грн
10+2015.12 грн
100+1838.13 грн
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IXFN66N85X IXFN66N85X IXYS DS100715IXFN66N85X.pdf Description: MOSFET N-CH 850V 65A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 33A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V
на замовлення 959 шт:
термін постачання 21-31 дні (днів)
1+2983.98 грн
10+2156.49 грн
100+1989.79 грн
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IXSA110N65L2-7TR IXSA110N65L2-7TR IXYS ixsa110n65l2-7tr-datasheet?assetguid=923b711e-d1bd-47db-883a-a89e0dbb7cd7 Description: 650V 25M (110A @ 25C) SIC MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 111A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 12mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 600 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
800+405.91 грн
Мінімальне замовлення: 800 шт
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IXSA110N65L2-7TR IXSA110N65L2-7TR IXYS ixsa110n65l2-7tr-datasheet?assetguid=923b711e-d1bd-47db-883a-a89e0dbb7cd7 Description: 650V 25M (110A @ 25C) SIC MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 111A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 12mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 600 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
1+889.63 грн
10+595.83 грн
50+484.45 грн
100+448.99 грн
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IXSA110N65L2-7TR IXSA110N65L2-7TR IXYS ixsa110n65l2-7tr-datasheet?assetguid=923b711e-d1bd-47db-883a-a89e0dbb7cd7 Description: 650V 25M (110A @ 25C) SIC MOSFET
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 111A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 12mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 600 V
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IXSG110N65L2K IXSG110N65L2K IXYS ixsg110n65l2k-datasheet?assetguid=d127241c-420d-4b40-9bb8-f5c211263533 Description: 650V 25M (110A @ 25C) SIC MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 111A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 12mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 600 V
товару немає в наявності
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IXSG110N65L2K IXSG110N65L2K IXYS ixsg110n65l2k-datasheet?assetguid=d127241c-420d-4b40-9bb8-f5c211263533 Description: 650V 25M (110A @ 25C) SIC MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 111A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 12mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 600 V
на замовлення 1998 шт:
термін постачання 21-31 дні (днів)
1+889.63 грн
10+595.83 грн
50+484.45 грн
100+448.99 грн
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IXTA50N20P-TRL IXTA50N20P-TRL IXYS littelfuse-discrete-mosfets-ixt-50n20p-datasheet?assetguid=93310175-2371-43af-9c53-8351f9872220 Description: MOSFET N-CH 200V 50A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2720 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 800 шт
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IXFA50N20X3 IXFA50N20X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_50n20x3_datasheet.pdf?assetguid=4654016f-96e1-44c8-b50b-388f1e88194d Description: MOSFET N-CH 200V 50A TO263
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 240W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXFP50N20X3 IXFP50N20X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_50n20x3_datasheet.pdf?assetguid=4654016f-96e1-44c8-b50b-388f1e88194d Description: DISCMSFT NCHULTRJNCTX3CLASS TO-2
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3 (IXFP)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 240W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
товару немає в наявності
 Мінімальне замовлення: 300 шт
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CLA15E1200NPB CLA15E1200NPB IXYS Littelfuse-Power-Semiconductors-CLA15E1200NPB-Datasheet?assetguid=fd97e8db-48b0-47df-8516-733a64105e24 Description: SCR 1.2KV 33A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 70 mA
Current - Gate Trigger (Igt) (Max): 20 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 170A, 185A
Current - On State (It (AV)) (Max): 15 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.35 V
Supplier Device Package: TO-220
Current - On State (It (RMS)) (Max): 33 A
Voltage - Off State: 1.2 kV
на замовлення 3700 шт:
термін постачання 21-31 дні (днів)
50+97.46 грн
Мінімальне замовлення: 50 шт
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IXTP3N100D2 IXTP3N100D2 IXYS littelfuse-discrete-mosfets-ixt-3n100-datasheet?assetguid=f0dbe4a2-4395-4958-a595-7cdc8d2662e1 Description: MOSFET N-CH 1000V 3A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 5.5Ohm @ 1.5A, 0V
Power Dissipation (Max): 125W (Tc)
Supplier Device Package: TO-220-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 25 V
на замовлення 154 шт:
термін постачання 21-31 дні (днів)
1+450.69 грн
10+291.04 грн
50+229.79 грн
100+197.14 грн
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IXTA6N50D2 IXTA6N50D2 IXYS Littelfuse-Discrete-MOSFETs-N-Channel-Depletion-Mode-IXT-6N50-Datasheet.PDF?assetguid=55BBD511-42CB-4098-A3A2-75365A398F37 Description: MOSFET N-CH 500V 6A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3A, 0V
Power Dissipation (Max): 300W (Tc)
Supplier Device Package: TO-263AA
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
на замовлення 1441 шт:
термін постачання 21-31 дні (днів)
1+852.01 грн
10+569.33 грн
50+462.05 грн
100+401.28 грн
500+346.79 грн
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MCD431-22IO2 IXYS littelfusethyristormodulesthyristordiodesm4312io2datasheetpdf.pdf Description: SCR MODULE 2.2KV 1020A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 12000A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 429 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 1020 A
Voltage - Off State: 2.2 kV
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IXTQ86N25T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_86n25t_datasheet.pdf?assetguid=ba6c182d-54be-4e7b-8aba-8a2942707f24 Description: MOSFET N-CH 250V 86A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 5330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 540W (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 43A, 10V
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXTH86N25T IXTH86N25T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_86n25t_datasheet.pdf?assetguid=ba6c182d-54be-4e7b-8aba-8a2942707f24 Description: MOSFET N-CH 250V 86A TO247
Input Capacitance (Ciss) (Max) @ Vds: 5330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 540W (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 43A, 10V
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXTA1R4N100P IXTA1R4N100P IXYS littelfuse-discrete-mosfets-ixt-1r4n100p-datasheet?assetguid=b007b850-0962-42a3-9a3b-6f5e246cdfb7 Description: MOSFET N-CH 1000V 1.4A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
на замовлення 461 шт:
термін постачання 21-31 дні (днів)
1+369.96 грн
10+235.79 грн
50+184.17 грн
100+157.22 грн
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IXFH320N10T2 IXFH320N10T2 IXYS IXF%28T%2CH%29320N10T2.pdf Description: MOSFET N-CH 100V 320A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 1000W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 26000 pF @ 25 V
на замовлення 193 шт:
термін постачання 21-31 дні (днів)
1+1383.43 грн
30+832.98 грн
60+773.62 грн
120+679.16 грн
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IXFT320N10T2-TRL IXYS littelfuse-discrete-mosfets-ixf-320n10t2-datasheet?assetguid=99cd63b2-fc21-4394-81cf-ea2bb2be118d Description: MOSFET N-CH 100V 320A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 1000W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-268
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 26000 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 400 шт
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IXTP26P20P IXTP26P20P IXYS IX%28T%2CH%2CP%2CQ%29A26P20P.pdf Description: MOSFET P-CH 200V 26A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 25 V
на замовлення 249 шт:
термін постачання 21-31 дні (днів)
1+667.81 грн
50+354.90 грн
100+327.09 грн
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IXTH48P20P IXTH48P20P IXYS Littelfuse-Discrete-MOSFETs-P-Channel-IXT-48P20P-Datasheet.PDF?assetguid=D6490986-9633-4C32-87E4-8A3F926553B9 Description: MOSFET P-CH 200V 48A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 500mA, 10V
Power Dissipation (Max): 462W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
на замовлення 2813 шт:
термін постачання 21-31 дні (днів)
1+1055.80 грн
30+621.62 грн
120+535.14 грн
510+461.09 грн
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IXTK90P20P IXTK90P20P IXYS littelfuse-discrete-mosfets-ixt-90p20p-datasheet?assetguid=b4a2751b-6a18-4402-b567-2c7291ae1466 Description: MOSFET P-CH 200V 90A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
на замовлення 793 шт:
термін постачання 21-31 дні (днів)
1+1799.64 грн
25+1133.14 грн
100+990.97 грн
500+914.84 грн
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IXTQ26P20P IXTQ26P20P IXYS IX%28T%2CH%2CP%2CQ%29A26P20P.pdf Description: MOSFET P-CH 200V 26A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 25 V
на замовлення 411 шт:
термін постачання 21-31 дні (днів)
1+701.51 грн
30+398.45 грн
60+365.37 грн
120+316.77 грн
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IXTT48P20P IXTT48P20P IXYS Littelfuse-Discrete-MOSFETs-P-Channel-IXT-48P20P-Datasheet.PDF?assetguid=D6490986-9633-4C32-87E4-8A3F926553B9 Description: MOSFET P-CH 200V 48A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 500mA, 10V
Power Dissipation (Max): 462W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
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IXTL2N450 IXTL2N450 IXYS DS100458BIXTL2N450.pdf Description: MOSFET N-CH 4500V 2A I5PAK
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Drain to Source Voltage (Vdss): 4500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOPLUSi5-Pak™
Vgs(th) (Max) @ Id: 6V @ 250µA
Power Dissipation (Max): 220W (Tc)
Rds On (Max) @ Id, Vgs: 23Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOPLUSi5-Pak™
Packaging: Tube
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
1+9747.52 грн
25+7681.05 грн
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CLA30E1200NPZ-TUB CLA30E1200NPZ-TUB IXYS Littelfuse-Power-Semiconductors-CLA30E1200NPZ-Datasheet?assetguid=1777e4de-6c4c-4d06-b477-7318fed53c50 Description: SCR 1.2KV 47A TO-263HV
Voltage - Off State: 1.2 kV
Current - On State (It (RMS)) (Max): 47 A
Supplier Device Package: TO-263HV
Voltage - On State (Vtm) (Max): 1.3 V
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Current - On State (It (AV)) (Max): 30 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 300A, 325A
Current - Gate Trigger (Igt) (Max): 30 mA
Current - Hold (Ih) (Max): 60 mA
Operating Temperature: -40°C ~ 150°C (TJ)
SCR Type: Standard Recovery
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 1400 шт
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IXTA12N50P IXTA12N50P IXYS Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXT-12N50P-Datasheet.PDF?assetguid=1EBA20B0-2CD4-4FB5-BDDC-FCD960E7D1DD Description: MOSFET N-CH 500V 12A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
на замовлення 1200 шт:
термін постачання 21-31 дні (днів)
1+334.69 грн
50+167.37 грн
100+152.38 грн
500+118.38 грн
1000+110.63 грн
В кошику  од. на суму  грн.
IXTA94N20X4 IXTA94N20X4 IXYS IXTA94N20X4_DS.pdf Description: MOSFET 200V 94A N-CH ULTRA TO263
Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 47A, 10V
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
на замовлення 1372 шт:
термін постачання 21-31 дні (днів)
1+960.17 грн
50+531.28 грн
100+493.49 грн
500+444.07 грн
В кошику  од. на суму  грн.
IXTA86N20X4 IXTA86N20X4 IXYS IXTA86N20X4_DS.pdf Description: MOSFET 200V 86A N-CH ULTRA TO263
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 43A, 10V
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
на замовлення 16622 шт:
термін постачання 21-31 дні (днів)
1+902.17 грн
50+496.41 грн
100+460.56 грн
500+409.91 грн
В кошику  од. на суму  грн.
IXTH94N20X4 IXTH94N20X4 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixth94n20x4_datasheet.pdf?assetguid=33bf70d9-5ba2-41c1-a10d-6826f12c0832 Description: MOSFET N-CH 200V 94A X4 TO-247
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISO TO-247-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 47A, 10V
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
на замовлення 4015 шт:
термін постачання 21-31 дні (днів)
1+927.25 грн
30+542.64 грн
120+465.92 грн
510+424.40 грн
В кошику  од. на суму  грн.
IXFH80N65X2 IXFH80N65X2 IXYS littelfuse-discrete-mosfets-ixf-80n65x2-datasheet?assetguid=2fa3fab3-abe9-4d9e-8e6a-191651df7b8b Description: MOSFET N-CH 650V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 40A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8245 pF @ 25 V
на замовлення 3060 шт:
термін постачання 21-31 дні (днів)
1+1358.35 грн
30+812.17 грн
60+753.21 грн
120+660.34 грн
510+623.90 грн
В кошику  од. на суму  грн.
N7585FE280
Виробник: IXYS
Description: SCR 2.8KV W119
Voltage - Off State: 2.8 kV
Supplier Device Package: W119
Current - On State (It (AV)) (Max): 7535 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 110000A @ 50Hz
SCR Type: Standard Recovery
Mounting Type: Chassis Mount
Package / Case: TO-200AF
Packaging: Box
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IXFH26N50P3 littelfuse-discrete-mosfets-ixf-26n50p3-datasheet?assetguid=a8b0d040-1523-4949-9cf7-d162b9eed257
IXFH26N50P3
Виробник: IXYS
Description: MOSFET N-CH 500V 26A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+777.54 грн
В кошику  од. на суму  грн.
IXTT26N50P littelfuse-discrete-mosfets-ixt-26n50p-datasheet?assetguid=c3369cfd-a2aa-471a-8124-d6f2d10435ef
IXTT26N50P
Виробник: IXYS
Description: MOSFET N-CH 500V 26A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
на замовлення 428 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+957.82 грн
30+555.85 грн
60+512.12 грн
120+446.12 грн
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IXTA140N055T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_140n055t2_datasheet.pdf?assetguid=886c24a8-3d1d-4378-98ef-e3645ff1ea05
IXTA140N055T2
Виробник: IXYS
Description: MOSFET N-CH 55V 140A TO263
Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Ta)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 300 шт
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IXTP3N120 littelfuse-discrete-mosfets-ixta3n120-datasheet?assetguid=0f8a2134-6aa0-4538-a4e2-9a575d3790e6
IXTP3N120
Виробник: IXYS
Description: MOSFET N-CH 1200V 3A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 500mA, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
на замовлення 1522 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+812.03 грн
10+541.26 грн
50+438.35 грн
100+380.34 грн
500+326.05 грн
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IXTA3N120-TRL littelfuse-discrete-mosfets-ixta3n120-datasheet?assetguid=0f8a2134-6aa0-4538-a4e2-9a575d3790e6
IXTA3N120-TRL
Виробник: IXYS
Description: MOSFET N-CH 1200V 3A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
800+286.02 грн
Мінімальне замовлення: 800 шт
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IXTA3N120-TRL littelfuse-discrete-mosfets-ixta3n120-datasheet?assetguid=0f8a2134-6aa0-4538-a4e2-9a575d3790e6
IXTA3N120-TRL
Виробник: IXYS
Description: MOSFET N-CH 1200V 3A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
на замовлення 816 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+634.11 грн
10+418.98 грн
100+337.12 грн
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IXFP3N120 Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFP3N120-Datasheet.PDF?assetguid=5509A502-26A4-4087-805C-A19D2622DD0A
IXFP3N120
Виробник: IXYS
Description: MOSFET N-CH 1200V 3A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 500mA, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
на замовлення 322 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+647.43 грн
50+344.27 грн
100+317.42 грн
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IXSJ43N120R1 power-semiconductor-sic-mosfet-ixsj43n120r1-datasheet?assetguid=56a9236f-63b0-443a-9230-5bde5bf364be
IXSJ43N120R1
Виробник: IXYS
Description: 1200V 36M (43A @ 25C) SIC MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 1A, 18V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: ISO247-3L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +12V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2453 pF @ 800 V
на замовлення 297 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1220.40 грн
30+732.27 грн
120+646.27 грн
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IXFA3N120 littelfuse-discrete-mosfets-ixfa3n120-datasheet?assetguid=0b4ef448-6b05-4745-a1a2-8f70be40c9b4
IXFA3N120
Виробник: IXYS
Description: MOSFET N-CH 1200V 3A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-263AA (IXFA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
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IXSJ43N120R1K power-semiconductor-sic-mosfet-ixsj43n120r1k-datasheet?assetguid=2ad383c5-35e4-405b-907e-ffaa794f4761
IXSJ43N120R1K
Виробник: IXYS
Description: 1200V 36M (43A @ 25C) SIC MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 20A, 18V
Power Dissipation (Max): 143.7W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: ISO247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2343 pF @ 800 V
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IXFX360N15T2 ixf-360n15t2-datasheet?assetguid=1b6ae960-85bd-4900-a0d0-2f0f75011064
IXFX360N15T2
Виробник: IXYS
Description: MOSFET N-CH 150V 360A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V
Power Dissipation (Max): 1670W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 715 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 47500 pF @ 25 V
на замовлення 1292 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2049.68 грн
30+1289.22 грн
120+1253.34 грн
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IXFK360N15T2 PdfFile325792.pdf
IXFK360N15T2
Виробник: IXYS
Description: MOSFET N-CH 150V 360A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V
Power Dissipation (Max): 1670W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 715 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 47500 pF @ 25 V
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IXTA08N100D2 littelfuse-discrete-mosfets-ixt-08n100-datasheet?assetguid=5f3f8653-b9a5-4c21-928a-8f26a664dbdc
IXTA08N100D2
Виробник: IXYS
Description: MOSFET N-CH 1000V 800MA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-263AA
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
на замовлення 5916 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+313.53 грн
50+155.09 грн
100+140.87 грн
500+108.82 грн
1000+101.31 грн
2000+95.00 грн
5000+91.25 грн
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MDMA140P1600TG Littelfuse-Power-Semiconductors-MDMA140P1600TG-Datasheet?assetguid=d2fe45b2-4b9c-4c02-a6ee-14fd5db6903f
MDMA140P1600TG
Виробник: IXYS
Description: DIODE MOD GP 1600V 140A TO-240AA
Mounting Type: Chassis Mount
Package / Case: TO-240AA
Packaging: Box
Current - Reverse Leakage @ Vr: 200 µA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.18 V @ 140 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-240AA
Current - Average Rectified (Io) (per Diode): 140A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2741.00 грн
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MCMA140PD1800TB mcma140pd1800tb-datasheet?assetguid=d1e56417-2b6e-4c8c-8afa-71f17e09d75f
MCMA140PD1800TB
Виробник: IXYS
Description: Bipolar Module - Thyristor TO-2
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 220 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (AV)) (Max): 140 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 2400A, 2590A
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Hold (Ih) (Max): 200 mA
Structure: Series Connection - SCR/Diode
Operating Temperature: -40°C ~ 140°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-240AA
Packaging: Box
на замовлення 35 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+3636.90 грн
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MCMA140P1600TA-NI MCMA140P1600TA.PDF
MCMA140P1600TA-NI
Виробник: IXYS
Description: SCR MODULE 1.6KV 220A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2.4kA, 2.59kA
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 140 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 220 A
Voltage - Off State: 1.6 kV
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+3542.84 грн
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MDMA140P1200TG Littelfuse-Power-Semiconductors-MDMA140P1200TG-Datasheet?assetguid=f4dbcca0-abd8-4211-a7a0-8e27fab0bfe3
MDMA140P1200TG
Виробник: IXYS
Description: DIODE MOD GP 1200V 140A TO-240AA
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: TO-240AA
Packaging: Box
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.18 V @ 140 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-240AA
Current - Average Rectified (Io) (per Diode): 140A
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MDMA1400C1600CC MDMA1400C1600CC.pdf
Виробник: IXYS
Description: DIODE MOD GP 1600V 700A COMPACK
Current - Reverse Leakage @ Vr: 500 µA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 700 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: ComPack
Current - Average Rectified (Io) (per Diode): 700A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
товару немає в наявності
Мінімальне замовлення: 3 шт
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MCMA1400E1600CD
Виробник: IXYS
Description: SCR MODULE 1.6KV 1700A COMPACK
Packaging: Box
Package / Case: ComPack
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 600 mA
Current - Gate Trigger (Igt) (Max): 600 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 36000A, 38900A
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1100 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 1700 A
Voltage - Off State: 1.6 kV
товару немає в наявності
Мінімальне замовлення: 3 шт
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IXTT16N50D2 littelfuse-discrete-mosfets-ixt-16n50-datasheet?assetguid=7b3b433a-6881-4eb8-98fb-ae5dc5f054f4
IXTT16N50D2
Виробник: IXYS
Description: MOSFET N-CH 500V 16A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 8A, 0V
Power Dissipation (Max): 695W (Tc)
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 199 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 25 V
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IXFA16N50P-TRL littelfuse-discrete-mosfets-ixf-16n50p-datasheet?assetguid=bb00d7c9-0646-4c67-89ce-480fb9520851
IXFA16N50P-TRL
Виробник: IXYS
Description: MOSFET N-CH 500V 16A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 800 шт
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IXFT100N30X3HV littelfusediscretemosfetsnchannelultrajunctionixf100n30x3hvdatasheetpdf.pdf
IXFT100N30X3HV
Виробник: IXYS
Description: MOSFET N-CH 300V 100A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 50A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1072.26 грн
30+635.73 грн
120+548.79 грн
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IXFH60N65X2 littelfuse-discrete-mosfets-ixfh60n65x2-datasheet?assetguid=05fbbc5b-c245-4dd5-af7b-8fa7f145f7f0
IXFH60N65X2
Виробник: IXYS
Description: MOSFET N-CH 650V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6180 pF @ 25 V
на замовлення 5069 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1120.07 грн
30+658.17 грн
60+608.21 грн
120+531.35 грн
510+458.67 грн
В кошику  од. на суму  грн.
IXTP20N65X2M littelfuse-discrete-mosfets-ixtp12n65x2m-datasheet?assetguid=bb457d93-cec3-41b9-97ee-48a3a768170e
IXTP20N65X2M
Виробник: IXYS
Description: MOSFET N-CH 650V 20A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 10A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
на замовлення 950 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
300+224.64 грн
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFP20N60X3
Виробник: IXYS
Description: DISCRETE MOSFET 20A 600V X3 TO22
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTN200N10L2 DS100238IXTN200N10L2.pdf
IXTN200N10L2
Виробник: IXYS
Description: MOSFET N-CH 100V 178A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 178A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 540 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
на замовлення 2554 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+4270.22 грн
10+3126.17 грн
50+2799.99 грн
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IXTN60N50L2 DS100086AIXTN60N50L2.pdf
IXTN60N50L2
Виробник: IXYS
Description: MOSFET N-CH 500V 53A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V
Power Dissipation (Max): 735W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 610 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V
на замовлення 1679 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+4270.22 грн
10+3247.99 грн
50+3064.14 грн
В кошику  од. на суму  грн.
IXTN90N25L2 littelfuse-discrete-mosfets-ixtn90n25-datasheet?assetguid=22138b57-480b-473e-a2e8-a7af15dabfda
IXTN90N25L2
Виробник: IXYS
Description: MOSFET N-CH 250V 90A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 500mA, 10V
Power Dissipation (Max): 735W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 640 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
на замовлення 344 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+4043.70 грн
10+2964.42 грн
50+2716.02 грн
В кошику  од. на суму  грн.
IXFN40N90P DS100062AIXFN40N90P.pdf
IXFN40N90P
Виробник: IXYS
Description: MOSFET N-CH 900V 33A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 20A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V
на замовлення 554 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2799.00 грн
10+2015.12 грн
100+1838.13 грн
В кошику  од. на суму  грн.
IXFN66N85X DS100715IXFN66N85X.pdf
IXFN66N85X
Виробник: IXYS
Description: MOSFET N-CH 850V 65A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 33A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V
на замовлення 959 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2983.98 грн
10+2156.49 грн
100+1989.79 грн
В кошику  од. на суму  грн.
IXSA110N65L2-7TR ixsa110n65l2-7tr-datasheet?assetguid=923b711e-d1bd-47db-883a-a89e0dbb7cd7
IXSA110N65L2-7TR
Виробник: IXYS
Description: 650V 25M (110A @ 25C) SIC MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 111A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 12mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 600 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
800+405.91 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXSA110N65L2-7TR ixsa110n65l2-7tr-datasheet?assetguid=923b711e-d1bd-47db-883a-a89e0dbb7cd7
IXSA110N65L2-7TR
Виробник: IXYS
Description: 650V 25M (110A @ 25C) SIC MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 111A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 12mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 600 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+889.63 грн
10+595.83 грн
50+484.45 грн
100+448.99 грн
В кошику  од. на суму  грн.
IXSA110N65L2-7TR ixsa110n65l2-7tr-datasheet?assetguid=923b711e-d1bd-47db-883a-a89e0dbb7cd7
IXSA110N65L2-7TR
Виробник: IXYS
Description: 650V 25M (110A @ 25C) SIC MOSFET
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 111A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 12mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 600 V
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IXSG110N65L2K ixsg110n65l2k-datasheet?assetguid=d127241c-420d-4b40-9bb8-f5c211263533
IXSG110N65L2K
Виробник: IXYS
Description: 650V 25M (110A @ 25C) SIC MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 111A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 12mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 600 V
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
IXSG110N65L2K ixsg110n65l2k-datasheet?assetguid=d127241c-420d-4b40-9bb8-f5c211263533
IXSG110N65L2K
Виробник: IXYS
Description: 650V 25M (110A @ 25C) SIC MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 111A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 12mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 600 V
на замовлення 1998 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+889.63 грн
10+595.83 грн
50+484.45 грн
100+448.99 грн
В кошику  од. на суму  грн.
IXTA50N20P-TRL littelfuse-discrete-mosfets-ixt-50n20p-datasheet?assetguid=93310175-2371-43af-9c53-8351f9872220
IXTA50N20P-TRL
Виробник: IXYS
Description: MOSFET N-CH 200V 50A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2720 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXFA50N20X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_50n20x3_datasheet.pdf?assetguid=4654016f-96e1-44c8-b50b-388f1e88194d
IXFA50N20X3
Виробник: IXYS
Description: MOSFET N-CH 200V 50A TO263
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 240W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFP50N20X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_50n20x3_datasheet.pdf?assetguid=4654016f-96e1-44c8-b50b-388f1e88194d
IXFP50N20X3
Виробник: IXYS
Description: DISCMSFT NCHULTRJNCTX3CLASS TO-2
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3 (IXFP)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 240W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
CLA15E1200NPB Littelfuse-Power-Semiconductors-CLA15E1200NPB-Datasheet?assetguid=fd97e8db-48b0-47df-8516-733a64105e24
CLA15E1200NPB
Виробник: IXYS
Description: SCR 1.2KV 33A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 70 mA
Current - Gate Trigger (Igt) (Max): 20 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 170A, 185A
Current - On State (It (AV)) (Max): 15 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.35 V
Supplier Device Package: TO-220
Current - On State (It (RMS)) (Max): 33 A
Voltage - Off State: 1.2 kV
на замовлення 3700 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
50+97.46 грн
Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
IXTP3N100D2 littelfuse-discrete-mosfets-ixt-3n100-datasheet?assetguid=f0dbe4a2-4395-4958-a595-7cdc8d2662e1
IXTP3N100D2
Виробник: IXYS
Description: MOSFET N-CH 1000V 3A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 5.5Ohm @ 1.5A, 0V
Power Dissipation (Max): 125W (Tc)
Supplier Device Package: TO-220-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 25 V
на замовлення 154 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+450.69 грн
10+291.04 грн
50+229.79 грн
100+197.14 грн
В кошику  од. на суму  грн.
IXTA6N50D2 Littelfuse-Discrete-MOSFETs-N-Channel-Depletion-Mode-IXT-6N50-Datasheet.PDF?assetguid=55BBD511-42CB-4098-A3A2-75365A398F37
IXTA6N50D2
Виробник: IXYS
Description: MOSFET N-CH 500V 6A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3A, 0V
Power Dissipation (Max): 300W (Tc)
Supplier Device Package: TO-263AA
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
на замовлення 1441 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+852.01 грн
10+569.33 грн
50+462.05 грн
100+401.28 грн
500+346.79 грн
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MCD431-22IO2 littelfusethyristormodulesthyristordiodesm4312io2datasheetpdf.pdf
Виробник: IXYS
Description: SCR MODULE 2.2KV 1020A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 12000A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 429 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 1020 A
Voltage - Off State: 2.2 kV
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IXTQ86N25T littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_86n25t_datasheet.pdf?assetguid=ba6c182d-54be-4e7b-8aba-8a2942707f24
Виробник: IXYS
Description: MOSFET N-CH 250V 86A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 5330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 540W (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 43A, 10V
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTH86N25T littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_86n25t_datasheet.pdf?assetguid=ba6c182d-54be-4e7b-8aba-8a2942707f24
IXTH86N25T
Виробник: IXYS
Description: MOSFET N-CH 250V 86A TO247
Input Capacitance (Ciss) (Max) @ Vds: 5330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 540W (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 43A, 10V
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTA1R4N100P littelfuse-discrete-mosfets-ixt-1r4n100p-datasheet?assetguid=b007b850-0962-42a3-9a3b-6f5e246cdfb7
IXTA1R4N100P
Виробник: IXYS
Description: MOSFET N-CH 1000V 1.4A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
на замовлення 461 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+369.96 грн
10+235.79 грн
50+184.17 грн
100+157.22 грн
В кошику  од. на суму  грн.
IXFH320N10T2 IXF%28T%2CH%29320N10T2.pdf
IXFH320N10T2
Виробник: IXYS
Description: MOSFET N-CH 100V 320A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 1000W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 26000 pF @ 25 V
на замовлення 193 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1383.43 грн
30+832.98 грн
60+773.62 грн
120+679.16 грн
В кошику  од. на суму  грн.
IXFT320N10T2-TRL littelfuse-discrete-mosfets-ixf-320n10t2-datasheet?assetguid=99cd63b2-fc21-4394-81cf-ea2bb2be118d
Виробник: IXYS
Description: MOSFET N-CH 100V 320A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 1000W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-268
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 26000 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 400 шт
В кошику  од. на суму  грн.
IXTP26P20P IX%28T%2CH%2CP%2CQ%29A26P20P.pdf
IXTP26P20P
Виробник: IXYS
Description: MOSFET P-CH 200V 26A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 25 V
на замовлення 249 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+667.81 грн
50+354.90 грн
100+327.09 грн
В кошику  од. на суму  грн.
IXTH48P20P Littelfuse-Discrete-MOSFETs-P-Channel-IXT-48P20P-Datasheet.PDF?assetguid=D6490986-9633-4C32-87E4-8A3F926553B9
IXTH48P20P
Виробник: IXYS
Description: MOSFET P-CH 200V 48A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 500mA, 10V
Power Dissipation (Max): 462W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
на замовлення 2813 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1055.80 грн
30+621.62 грн
120+535.14 грн
510+461.09 грн
В кошику  од. на суму  грн.
IXTK90P20P littelfuse-discrete-mosfets-ixt-90p20p-datasheet?assetguid=b4a2751b-6a18-4402-b567-2c7291ae1466
IXTK90P20P
Виробник: IXYS
Description: MOSFET P-CH 200V 90A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
на замовлення 793 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1799.64 грн
25+1133.14 грн
100+990.97 грн
500+914.84 грн
В кошику  од. на суму  грн.
IXTQ26P20P IX%28T%2CH%2CP%2CQ%29A26P20P.pdf
IXTQ26P20P
Виробник: IXYS
Description: MOSFET P-CH 200V 26A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 25 V
на замовлення 411 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+701.51 грн
30+398.45 грн
60+365.37 грн
120+316.77 грн
В кошику  од. на суму  грн.
IXTT48P20P Littelfuse-Discrete-MOSFETs-P-Channel-IXT-48P20P-Datasheet.PDF?assetguid=D6490986-9633-4C32-87E4-8A3F926553B9
IXTT48P20P
Виробник: IXYS
Description: MOSFET P-CH 200V 48A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 500mA, 10V
Power Dissipation (Max): 462W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXTL2N450 DS100458BIXTL2N450.pdf
IXTL2N450
Виробник: IXYS
Description: MOSFET N-CH 4500V 2A I5PAK
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Drain to Source Voltage (Vdss): 4500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOPLUSi5-Pak™
Vgs(th) (Max) @ Id: 6V @ 250µA
Power Dissipation (Max): 220W (Tc)
Rds On (Max) @ Id, Vgs: 23Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOPLUSi5-Pak™
Packaging: Tube
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+9747.52 грн
25+7681.05 грн
В кошику  од. на суму  грн.
CLA30E1200NPZ-TUB Littelfuse-Power-Semiconductors-CLA30E1200NPZ-Datasheet?assetguid=1777e4de-6c4c-4d06-b477-7318fed53c50
CLA30E1200NPZ-TUB
Виробник: IXYS
Description: SCR 1.2KV 47A TO-263HV
Voltage - Off State: 1.2 kV
Current - On State (It (RMS)) (Max): 47 A
Supplier Device Package: TO-263HV
Voltage - On State (Vtm) (Max): 1.3 V
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Current - On State (It (AV)) (Max): 30 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 300A, 325A
Current - Gate Trigger (Igt) (Max): 30 mA
Current - Hold (Ih) (Max): 60 mA
Operating Temperature: -40°C ~ 150°C (TJ)
SCR Type: Standard Recovery
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 1400 шт
В кошику  од. на суму  грн.
IXTA12N50P Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXT-12N50P-Datasheet.PDF?assetguid=1EBA20B0-2CD4-4FB5-BDDC-FCD960E7D1DD
IXTA12N50P
Виробник: IXYS
Description: MOSFET N-CH 500V 12A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
на замовлення 1200 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+334.69 грн
50+167.37 грн
100+152.38 грн
500+118.38 грн
1000+110.63 грн
В кошику  од. на суму  грн.
IXTA94N20X4 IXTA94N20X4_DS.pdf
IXTA94N20X4
Виробник: IXYS
Description: MOSFET 200V 94A N-CH ULTRA TO263
Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 47A, 10V
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
на замовлення 1372 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+960.17 грн
50+531.28 грн
100+493.49 грн
500+444.07 грн
В кошику  од. на суму  грн.
IXTA86N20X4 IXTA86N20X4_DS.pdf
IXTA86N20X4
Виробник: IXYS
Description: MOSFET 200V 86A N-CH ULTRA TO263
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 43A, 10V
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
на замовлення 16622 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+902.17 грн
50+496.41 грн
100+460.56 грн
500+409.91 грн
В кошику  од. на суму  грн.
IXTH94N20X4 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixth94n20x4_datasheet.pdf?assetguid=33bf70d9-5ba2-41c1-a10d-6826f12c0832
IXTH94N20X4
Виробник: IXYS
Description: MOSFET N-CH 200V 94A X4 TO-247
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISO TO-247-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 47A, 10V
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
на замовлення 4015 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+927.25 грн
30+542.64 грн
120+465.92 грн
510+424.40 грн
В кошику  од. на суму  грн.
IXFH80N65X2 littelfuse-discrete-mosfets-ixf-80n65x2-datasheet?assetguid=2fa3fab3-abe9-4d9e-8e6a-191651df7b8b
IXFH80N65X2
Виробник: IXYS
Description: MOSFET N-CH 650V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 40A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8245 pF @ 25 V
на замовлення 3060 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1358.35 грн
30+812.17 грн
60+753.21 грн
120+660.34 грн
510+623.90 грн
В кошику  од. на суму  грн.
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