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IXFA80N25X3-TRL IXFA80N25X3-TRL IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfa80n25x3_datasheet.pdf.pdf Description: MOSFET N-CH 250V 80A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 40A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
на замовлення 1609 шт:
термін постачання 21-31 дні (днів)
1+623.61 грн
10+ 515.21 грн
100+ 429.33 грн
IXTH1N250 IXTH1N250 IXYS littelfuse_discrete_mosfets_n-channel_standard_ixth1n250_datasheet.pdf.pdf Description: MOSFET N-CH 2500V 1.5A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 40Ohm @ 750mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Drain to Source Voltage (Vdss): 2500 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
на замовлення 214 шт:
термін постачання 21-31 дні (днів)
1+2675.47 грн
30+ 2158.56 грн
120+ 2014.65 грн
IXFP30N25X3M IXFP30N25X3M IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfp30n25x3m_datasheet.pdf.pdf Description: MOSFET N-CH 250V 30A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
на замовлення 1088 шт:
термін постачання 21-31 дні (днів)
1+488.2 грн
10+ 424.48 грн
100+ 351.41 грн
500+ 287.17 грн
1000+ 250.12 грн
IXFJ80N25X3 IXFJ80N25X3 IXYS PCIM_Highlights_2017.pdf Description: MOSFET N-CH 250V 44A ISO TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 40A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: ISO TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+886.6 грн
MCB20P1200LB-TRR IXYS Description: MCB20P1200LB-TRR
товар відсутній
MCB30P1200LB-TRR IXYS Description: MCB30P1200LB-TRR
товар відсутній
CLE90UH1200TLB-TRR IXYS Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCLE90UH1200TLB.pdf Description: BIPOLAR MODULE - THYRISTOR SMPD
товар відсутній
MCB60P1200TLB-TRR IXYS Description: MCB60P1200TLB-TRR
товар відсутній
MCB40P1200LB-TRR IXYS Description: MCB40P1200LB-TRR
товар відсутній
DHG60U1200LB-TRR IXYS Description: BIPOLAR MODULE-BRIDGE RECTIFIER
товар відсутній
DHG40B1200LB-TRR IXYS Description: BIPOLAR MODULE-BRIDGE RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerSMD
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 9-SMPD-B
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 34 A
Voltage - Forward (Vf) (Max) @ If: 2.24 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
товар відсутній
MKH17RP650DCGL-TRR IXYS Description: MKH17RP650DCGLB-TRR
Packaging: Tape & Reel (TR)
Part Status: Active
товар відсутній
N3175HE160 IXYS Description: SCR 1.6KV 6310A W80
товар відсутній
N3175HE180 IXYS Description: SCR 1.8KV 6310A W80
товар відсутній
IXA20RG1200DHG-TUB IXA20RG1200DHG-TUB IXYS littelfuse_discrete_igbts_smpd_packages_ixa20rg1200dhglb_datasheet.pdf.pdf Description: IGBT 1200V 32A 125W SMPD
товар відсутній
IXA20RG1200DHG-TRR IXA20RG1200DHG-TRR IXYS littelfuse_discrete_igbts_smpd_packages_ixa20rg1200dhglb_datasheet.pdf.pdf Description: IGBT 1200V 32A 125W SMPD
товар відсутній
IXA20I1200PZ-TUB IXA20I1200PZ-TUB IXYS Description: DISC IGBT XPT-GENX3 TO-263D2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: TO-263HV
IGBT Type: PT
Td (on/off) @ 25°C: 48ns/230ns
Switching Energy: 1.6mJ (on), 1.7mJ (off)
Test Condition: 600V, 15A, 56Ohm, 15V
Gate Charge: 47 nC
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 165 W
товар відсутній
IXA20I1200PZ-TRL IXA20I1200PZ-TRL IXYS Description: DISC IGBT XPT-GENX3 TO-263D2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: TO-263HV
IGBT Type: PT
Td (on/off) @ 25°C: 48ns/230ns
Switching Energy: 1.6mJ (on), 1.7mJ (off)
Test Condition: 600V, 15A, 56Ohm, 15V
Gate Charge: 47 nC
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 165 W
товар відсутній
IXYP24N100A4 IXYP24N100A4 IXYS media?resourcetype=datasheets&amp;itemid=10de694c-f2b8-4ef8-81d5-7cb713d12062&amp;filename=littelfuse_discrete_igbts_xpt_ixy_24n100a4_datasheet.pdf Description: IGBT DISCRETE TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Supplier Device Package: TO-220 (IXYP)
IGBT Type: PT
Td (on/off) @ 25°C: 13ns/216ns
Switching Energy: 3.5mJ (on), 2.3mJ (off)
Test Condition: 800V, 24A, 10Ohm, 15V
Gate Charge: 44 nC
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 145 A
Power - Max: 375 W
товар відсутній
IXFP8N65X2M IXFP8N65X2M IXYS Description: MOSFET N-CH 650V 8A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
товар відсутній
QJ8035LH4TP QJ8035LH4TP IXYS Description: TRIAC ALTRNSTR 800V 35A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: ITO-220AB
Part Status: Active
Current - On State (It (RMS)) (Max): 35 A
Voltage - Off State: 800 V
на замовлення 965 шт:
термін постачання 21-31 дні (днів)
1+405.53 грн
10+ 334.57 грн
100+ 278.81 грн
500+ 230.87 грн
QJ8035RH4TP QJ8035RH4TP IXYS Description: TRIAC ALTERNISTOR 800V 35A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220
Part Status: Active
Current - On State (It (RMS)) (Max): 35 A
Voltage - Off State: 800 V
на замовлення 984 шт:
термін постачання 21-31 дні (днів)
1+379.87 грн
10+ 307.05 грн
100+ 248.4 грн
500+ 207.21 грн
QJ8035NH4TP QJ8035NH4TP IXYS Description: TRIAC ALTERNISTOR 800V 35A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Current - On State (It (RMS)) (Max): 35 A
Voltage - Off State: 800 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1+439.74 грн
10+ 355.37 грн
100+ 287.44 грн
500+ 239.78 грн
1000+ 205.31 грн
IXFK170N25X3 IXFK170N25X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_170n25x3_datasheet.pdf.pdf Description: MOSFET N-CH 250V 170A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 85A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-264AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
1+1356.98 грн
VBE60-12A IXYS Description: PWRDIODEDISC-RECTIFIER SOT-227B(
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+2325.54 грн
IXFK90N65X3 IXFK90N65X3 IXYS Description: MOSFET 90A 650V X3 TO264K
Packaging: Tube
Part Status: Active
товар відсутній
IXFH7N100P IXFH7N100P IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_7n100p_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 7A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 6V @ 1mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2590 pF @ 25 V
на замовлення 870 шт:
термін постачання 21-31 дні (днів)
300+509.1 грн
Мінімальне замовлення: 300
IXFA7N100P-TRL IXFA7N100P-TRL IXYS Description: MOSFET N-CH 1000V 7A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 6V @ 1mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2590 pF @ 25 V
товар відсутній
MDNA660U2200PT-PC IXYS Description: MDNA660U2200PTEH-PC
Packaging: Box
Part Status: Active
товар відсутній
IXTY90N055T2-TRL IXYS Description: MOSFET N-CH 55V 90A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 25 V
товар відсутній
N1725MC360 IXYS Description: SCR 3.6KV 3360A W70
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 22000A @ 50Hz
Current - On State (It (AV)) (Max): 1725 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 3 V
Current - Off State (Max): 150 mA
Supplier Device Package: W70
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 3360 A
Voltage - Off State: 3.6 kV
товар відсутній
IXTA140P05T-TRL IXTA140P05T-TRL IXYS Description: IXTA140P05T
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 70A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V
товар відсутній
QJ8030RH4TP QJ8030RH4TP IXYS Description: TRIAC ALTERNISTOR 800V 30A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220
Part Status: Active
Current - On State (It (RMS)) (Max): 30 A
Voltage - Off State: 800 V
на замовлення 990 шт:
термін постачання 21-31 дні (днів)
1+345.66 грн
10+ 279.19 грн
100+ 225.83 грн
500+ 188.38 грн
QJ8035NH4RP QJ8035NH4RP IXYS Description: TRIAC ALTERNISTOR 800V 35A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Current - On State (It (RMS)) (Max): 35 A
Voltage - Off State: 800 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
500+265.33 грн
Мінімальне замовлення: 500
QJ8035NH4RP QJ8035NH4RP IXYS Description: TRIAC ALTERNISTOR 800V 35A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Current - On State (It (RMS)) (Max): 35 A
Voltage - Off State: 800 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
1+439.74 грн
10+ 355.37 грн
100+ 287.44 грн
QJ8030NH4TP QJ8030NH4TP IXYS Description: TRIAC ALTERNISTOR 800V 30A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Current - On State (It (RMS)) (Max): 30 A
Voltage - Off State: 800 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1+421.92 грн
10+ 341.09 грн
100+ 275.92 грн
500+ 230.17 грн
1000+ 197.08 грн
DSA120X150LB-TUB DSA120X150LB-TUB IXYS DSA120X150LB.pdf Description: DIODE ARRAY SCHOTTKY 150V SMPD
Packaging: Tube
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 75A
Supplier Device Package: ISOPLUS-SMPD™.B
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
товар відсутній
CLA5E1200UC-TRL CLA5E1200UC-TRL IXYS CLA5E1200UC.pdf Description: SCR 1.2KV 7.8A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C
Current - Hold (Ih) (Max): 30 mA
Current - Gate Trigger (Igt) (Max): 20 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 50A, 54A
Current - On State (It (AV)) (Max): 5 A
Voltage - Gate Trigger (Vgt) (Max): 1.8 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-252AA
Part Status: Active
Current - On State (It (RMS)) (Max): 7.8 A
Voltage - Off State: 1.2 kV
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+99.99 грн
Мінімальне замовлення: 2500
CLA5E1200UC-TRL CLA5E1200UC-TRL IXYS CLA5E1200UC.pdf Description: SCR 1.2KV 7.8A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C
Current - Hold (Ih) (Max): 30 mA
Current - Gate Trigger (Igt) (Max): 20 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 50A, 54A
Current - On State (It (AV)) (Max): 5 A
Voltage - Gate Trigger (Vgt) (Max): 1.8 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-252AA
Part Status: Active
Current - On State (It (RMS)) (Max): 7.8 A
Voltage - Off State: 1.2 kV
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2+208.82 грн
10+ 180.36 грн
100+ 144.93 грн
500+ 111.75 грн
1000+ 92.59 грн
Мінімальне замовлення: 2
DHG40B1200LB-TUB IXYS Description: BIPOLAR MODULE-BRIDGE RECTIFIER
Packaging: Tube
Package / Case: 9-PowerSMD
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 9-SMPD-B
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 34 A
Voltage - Forward (Vf) (Max) @ If: 2.24 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
товар відсутній
IXFQ80N25X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_80n25x3_datasheet.pdf.pdf Description: MOSFET N-CH 250V 80A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 40A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
товар відсутній
IXFK32N100X IXFK32N100X IXYS Viewer.aspx?p=http%3a%2f%2fixapps.ixys.com%2fDataSheet%2fDS100906B(IXFT-FH--FK32N100X-HV).pdf Description: MOSFET N-CH 1000V 32A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 16A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 6V @ 4mA
Supplier Device Package: TO-264
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4075 pF @ 25 V
на замовлення 701 шт:
термін постачання 21-31 дні (днів)
1+1445.35 грн
25+ 1153.79 грн
100+ 1081.66 грн
500+ 866.22 грн
S6X8BBS3RP S6X8BBS3RP IXYS media?resourcetype=datasheets&itemid=c9e0eab7-2106-4a7f-8abe-0b74489ab8d7&filename=littelfuse-thyristor-sxx8bbs-datasheet Description: 600V SENSITIVE SCR IN SOT89 PACK
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 10 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10A, 12A
Current - On State (It (AV)) (Max): 510 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 5 µA
Supplier Device Package: SOT-23-3
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 600 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+14.34 грн
6000+ 13.11 грн
9000+ 12.17 грн
Мінімальне замовлення: 3000
S6X8BBS3RP S6X8BBS3RP IXYS media?resourcetype=datasheets&itemid=c9e0eab7-2106-4a7f-8abe-0b74489ab8d7&filename=littelfuse-thyristor-sxx8bbs-datasheet Description: 600V SENSITIVE SCR IN SOT89 PACK
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 10 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10A, 12A
Current - On State (It (AV)) (Max): 510 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 5 µA
Supplier Device Package: SOT-23-3
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 600 V
на замовлення 9055 шт:
термін постачання 21-31 дні (днів)
7+42.76 грн
10+ 35 грн
100+ 24.34 грн
500+ 17.84 грн
1000+ 14.5 грн
Мінімальне замовлення: 7
DMA30P1200HB IXYS Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fDMA30P1200HB.pdf Description: DIODE GEN PURP 1.2KV 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 11pF @ 400V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 (IXTH)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
товар відсутній
MKH17RP650DCGL-TUB IXYS Description: MKH17RP650DCGLB-TUB
Packaging: Tube
Part Status: Active
товар відсутній
MKH24I650HR IXYS Description: DISCMSFT NCHSUPRJUNCCFD-CLS ISO2
Packaging: Tube
Part Status: Active
товар відсутній
IXFP13N60X3 IXYS Description: DISCRETE MOSFET 13A 600V X3 TO22
Packaging: Tube
Part Status: Active
товар відсутній
IXFY13N60X3 IXYS Description: DISCRETE MOSFET 13A 600V X3 TO25
Packaging: Tube
Part Status: Active
товар відсутній
IXFX110N65X3 IXYS Description: DISCRETE MOSFET 110A 650V X3 PLU
Packaging: Tube
Part Status: Active
товар відсутній
IXFN110N65X3 IXYS Description: DISCRETE MOSFET 110A 650V X3 SOT
Packaging: Tube
Part Status: Active
товар відсутній
IXFK110N65X3 IXYS Description: DISCRETE MOSFET 110A 650V X3 TO2
Packaging: Tube
Part Status: Active
товар відсутній
IXFP12N65X3 IXYS Description: DISCRETE MOSFET 12A 650V X3 TO22
Packaging: Tube
Part Status: Active
товар відсутній
IXFY12N65X3 IXYS Description: DISCRETE MOSFET 12A 650V X3 TO25
Packaging: Tube
Part Status: Active
товар відсутній
S6X8TS3RP IXYS littelfuse_thyristor_sxx8xsx_datasheet.pdf.pdf Description: 600V SENSITIVE SCR IN SOT223 PAC
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 10A
Current - On State (It (AV)) (Max): 510 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 3 µA
Supplier Device Package: SOT-23-3
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 800 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1000+22.53 грн
2000+ 19.66 грн
Мінімальне замовлення: 1000
S6X8TS3RP IXYS littelfuse_thyristor_sxx8xsx_datasheet.pdf.pdf Description: 600V SENSITIVE SCR IN SOT223 PAC
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 10A
Current - On State (It (AV)) (Max): 510 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 3 µA
Supplier Device Package: SOT-23-3
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 800 V
на замовлення 3100 шт:
термін постачання 21-31 дні (днів)
6+51.31 грн
10+ 43.51 грн
100+ 33.33 грн
500+ 24.73 грн
Мінімальне замовлення: 6
CNA30E2200FB IXYS Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCNA30E2200FB.pdf Description: SCR 2.2KV 47A I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -10°C ~ 70°C (TJ)
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 200A
Current - On State (It (AV)) (Max): 30 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Voltage - On State (Vtm) (Max): 3 V
Current - Off State (Max): 50 µA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Active
Current - On State (It (RMS)) (Max): 47 A
Voltage - Off State: 2.2 kV
товар відсутній
LGD8201TH IXYS Description: DPAK, IGBT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.9V @ 4.5V, 20A
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 440 V
Current - Collector Pulsed (Icm): 50 A
Power - Max: 125 W
товар відсутній
LGB8204ATH LGB8204ATH IXYS Description: D2PAK, IGBT3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 2V @ 4.5V, 10A
Supplier Device Package: D2PAK
Part Status: Active
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 430 V
Current - Collector Pulsed (Icm): 50 A
Power - Max: 115 W
товар відсутній
LST3205EL2CT2 IXYS Description: THERMALLY PROTECTED MOV
Packaging: Bulk
Part Status: Active
товар відсутній
IXFA80N25X3-TRL littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfa80n25x3_datasheet.pdf.pdf
IXFA80N25X3-TRL
Виробник: IXYS
Description: MOSFET N-CH 250V 80A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 40A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
на замовлення 1609 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+623.61 грн
10+ 515.21 грн
100+ 429.33 грн
IXTH1N250 littelfuse_discrete_mosfets_n-channel_standard_ixth1n250_datasheet.pdf.pdf
IXTH1N250
Виробник: IXYS
Description: MOSFET N-CH 2500V 1.5A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 40Ohm @ 750mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Drain to Source Voltage (Vdss): 2500 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
на замовлення 214 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+2675.47 грн
30+ 2158.56 грн
120+ 2014.65 грн
IXFP30N25X3M littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfp30n25x3m_datasheet.pdf.pdf
IXFP30N25X3M
Виробник: IXYS
Description: MOSFET N-CH 250V 30A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
на замовлення 1088 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+488.2 грн
10+ 424.48 грн
100+ 351.41 грн
500+ 287.17 грн
1000+ 250.12 грн
IXFJ80N25X3 PCIM_Highlights_2017.pdf
IXFJ80N25X3
Виробник: IXYS
Description: MOSFET N-CH 250V 44A ISO TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 40A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: ISO TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+886.6 грн
MCB20P1200LB-TRR
Виробник: IXYS
Description: MCB20P1200LB-TRR
товар відсутній
MCB30P1200LB-TRR
Виробник: IXYS
Description: MCB30P1200LB-TRR
товар відсутній
CLE90UH1200TLB-TRR Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCLE90UH1200TLB.pdf
Виробник: IXYS
Description: BIPOLAR MODULE - THYRISTOR SMPD
товар відсутній
MCB60P1200TLB-TRR
Виробник: IXYS
Description: MCB60P1200TLB-TRR
товар відсутній
MCB40P1200LB-TRR
Виробник: IXYS
Description: MCB40P1200LB-TRR
товар відсутній
DHG60U1200LB-TRR
Виробник: IXYS
Description: BIPOLAR MODULE-BRIDGE RECTIFIER
товар відсутній
DHG40B1200LB-TRR
Виробник: IXYS
Description: BIPOLAR MODULE-BRIDGE RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerSMD
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 9-SMPD-B
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 34 A
Voltage - Forward (Vf) (Max) @ If: 2.24 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
товар відсутній
MKH17RP650DCGL-TRR
Виробник: IXYS
Description: MKH17RP650DCGLB-TRR
Packaging: Tape & Reel (TR)
Part Status: Active
товар відсутній
N3175HE160
Виробник: IXYS
Description: SCR 1.6KV 6310A W80
товар відсутній
N3175HE180
Виробник: IXYS
Description: SCR 1.8KV 6310A W80
товар відсутній
IXA20RG1200DHG-TUB littelfuse_discrete_igbts_smpd_packages_ixa20rg1200dhglb_datasheet.pdf.pdf
IXA20RG1200DHG-TUB
Виробник: IXYS
Description: IGBT 1200V 32A 125W SMPD
товар відсутній
IXA20RG1200DHG-TRR littelfuse_discrete_igbts_smpd_packages_ixa20rg1200dhglb_datasheet.pdf.pdf
IXA20RG1200DHG-TRR
Виробник: IXYS
Description: IGBT 1200V 32A 125W SMPD
товар відсутній
IXA20I1200PZ-TUB
IXA20I1200PZ-TUB
Виробник: IXYS
Description: DISC IGBT XPT-GENX3 TO-263D2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: TO-263HV
IGBT Type: PT
Td (on/off) @ 25°C: 48ns/230ns
Switching Energy: 1.6mJ (on), 1.7mJ (off)
Test Condition: 600V, 15A, 56Ohm, 15V
Gate Charge: 47 nC
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 165 W
товар відсутній
IXA20I1200PZ-TRL
IXA20I1200PZ-TRL
Виробник: IXYS
Description: DISC IGBT XPT-GENX3 TO-263D2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: TO-263HV
IGBT Type: PT
Td (on/off) @ 25°C: 48ns/230ns
Switching Energy: 1.6mJ (on), 1.7mJ (off)
Test Condition: 600V, 15A, 56Ohm, 15V
Gate Charge: 47 nC
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 165 W
товар відсутній
IXYP24N100A4 media?resourcetype=datasheets&amp;itemid=10de694c-f2b8-4ef8-81d5-7cb713d12062&amp;filename=littelfuse_discrete_igbts_xpt_ixy_24n100a4_datasheet.pdf
IXYP24N100A4
Виробник: IXYS
Description: IGBT DISCRETE TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Supplier Device Package: TO-220 (IXYP)
IGBT Type: PT
Td (on/off) @ 25°C: 13ns/216ns
Switching Energy: 3.5mJ (on), 2.3mJ (off)
Test Condition: 800V, 24A, 10Ohm, 15V
Gate Charge: 44 nC
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 145 A
Power - Max: 375 W
товар відсутній
IXFP8N65X2M
IXFP8N65X2M
Виробник: IXYS
Description: MOSFET N-CH 650V 8A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
товар відсутній
QJ8035LH4TP
QJ8035LH4TP
Виробник: IXYS
Description: TRIAC ALTRNSTR 800V 35A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: ITO-220AB
Part Status: Active
Current - On State (It (RMS)) (Max): 35 A
Voltage - Off State: 800 V
на замовлення 965 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+405.53 грн
10+ 334.57 грн
100+ 278.81 грн
500+ 230.87 грн
QJ8035RH4TP
QJ8035RH4TP
Виробник: IXYS
Description: TRIAC ALTERNISTOR 800V 35A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220
Part Status: Active
Current - On State (It (RMS)) (Max): 35 A
Voltage - Off State: 800 V
на замовлення 984 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+379.87 грн
10+ 307.05 грн
100+ 248.4 грн
500+ 207.21 грн
QJ8035NH4TP
QJ8035NH4TP
Виробник: IXYS
Description: TRIAC ALTERNISTOR 800V 35A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Current - On State (It (RMS)) (Max): 35 A
Voltage - Off State: 800 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+439.74 грн
10+ 355.37 грн
100+ 287.44 грн
500+ 239.78 грн
1000+ 205.31 грн
IXFK170N25X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_170n25x3_datasheet.pdf.pdf
IXFK170N25X3
Виробник: IXYS
Description: MOSFET N-CH 250V 170A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 85A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-264AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1356.98 грн
VBE60-12A
Виробник: IXYS
Description: PWRDIODEDISC-RECTIFIER SOT-227B(
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+2325.54 грн
IXFK90N65X3
IXFK90N65X3
Виробник: IXYS
Description: MOSFET 90A 650V X3 TO264K
Packaging: Tube
Part Status: Active
товар відсутній
IXFH7N100P littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_7n100p_datasheet.pdf.pdf
IXFH7N100P
Виробник: IXYS
Description: MOSFET N-CH 1000V 7A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 6V @ 1mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2590 pF @ 25 V
на замовлення 870 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
300+509.1 грн
Мінімальне замовлення: 300
IXFA7N100P-TRL
IXFA7N100P-TRL
Виробник: IXYS
Description: MOSFET N-CH 1000V 7A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 6V @ 1mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2590 pF @ 25 V
товар відсутній
MDNA660U2200PT-PC
Виробник: IXYS
Description: MDNA660U2200PTEH-PC
Packaging: Box
Part Status: Active
товар відсутній
IXTY90N055T2-TRL
Виробник: IXYS
Description: MOSFET N-CH 55V 90A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 25 V
товар відсутній
N1725MC360
Виробник: IXYS
Description: SCR 3.6KV 3360A W70
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 22000A @ 50Hz
Current - On State (It (AV)) (Max): 1725 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 3 V
Current - Off State (Max): 150 mA
Supplier Device Package: W70
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 3360 A
Voltage - Off State: 3.6 kV
товар відсутній
IXTA140P05T-TRL
IXTA140P05T-TRL
Виробник: IXYS
Description: IXTA140P05T
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 70A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V
товар відсутній
QJ8030RH4TP
QJ8030RH4TP
Виробник: IXYS
Description: TRIAC ALTERNISTOR 800V 30A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220
Part Status: Active
Current - On State (It (RMS)) (Max): 30 A
Voltage - Off State: 800 V
на замовлення 990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+345.66 грн
10+ 279.19 грн
100+ 225.83 грн
500+ 188.38 грн
QJ8035NH4RP
QJ8035NH4RP
Виробник: IXYS
Description: TRIAC ALTERNISTOR 800V 35A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Current - On State (It (RMS)) (Max): 35 A
Voltage - Off State: 800 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
500+265.33 грн
Мінімальне замовлення: 500
QJ8035NH4RP
QJ8035NH4RP
Виробник: IXYS
Description: TRIAC ALTERNISTOR 800V 35A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Current - On State (It (RMS)) (Max): 35 A
Voltage - Off State: 800 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+439.74 грн
10+ 355.37 грн
100+ 287.44 грн
QJ8030NH4TP
QJ8030NH4TP
Виробник: IXYS
Description: TRIAC ALTERNISTOR 800V 30A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Current - On State (It (RMS)) (Max): 30 A
Voltage - Off State: 800 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+421.92 грн
10+ 341.09 грн
100+ 275.92 грн
500+ 230.17 грн
1000+ 197.08 грн
DSA120X150LB-TUB DSA120X150LB.pdf
DSA120X150LB-TUB
Виробник: IXYS
Description: DIODE ARRAY SCHOTTKY 150V SMPD
Packaging: Tube
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 75A
Supplier Device Package: ISOPLUS-SMPD™.B
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
товар відсутній
CLA5E1200UC-TRL CLA5E1200UC.pdf
CLA5E1200UC-TRL
Виробник: IXYS
Description: SCR 1.2KV 7.8A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C
Current - Hold (Ih) (Max): 30 mA
Current - Gate Trigger (Igt) (Max): 20 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 50A, 54A
Current - On State (It (AV)) (Max): 5 A
Voltage - Gate Trigger (Vgt) (Max): 1.8 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-252AA
Part Status: Active
Current - On State (It (RMS)) (Max): 7.8 A
Voltage - Off State: 1.2 kV
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+99.99 грн
Мінімальне замовлення: 2500
CLA5E1200UC-TRL CLA5E1200UC.pdf
CLA5E1200UC-TRL
Виробник: IXYS
Description: SCR 1.2KV 7.8A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C
Current - Hold (Ih) (Max): 30 mA
Current - Gate Trigger (Igt) (Max): 20 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 50A, 54A
Current - On State (It (AV)) (Max): 5 A
Voltage - Gate Trigger (Vgt) (Max): 1.8 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-252AA
Part Status: Active
Current - On State (It (RMS)) (Max): 7.8 A
Voltage - Off State: 1.2 kV
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+208.82 грн
10+ 180.36 грн
100+ 144.93 грн
500+ 111.75 грн
1000+ 92.59 грн
Мінімальне замовлення: 2
DHG40B1200LB-TUB
Виробник: IXYS
Description: BIPOLAR MODULE-BRIDGE RECTIFIER
Packaging: Tube
Package / Case: 9-PowerSMD
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 9-SMPD-B
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 34 A
Voltage - Forward (Vf) (Max) @ If: 2.24 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
товар відсутній
IXFQ80N25X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_80n25x3_datasheet.pdf.pdf
Виробник: IXYS
Description: MOSFET N-CH 250V 80A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 40A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
товар відсутній
IXFK32N100X Viewer.aspx?p=http%3a%2f%2fixapps.ixys.com%2fDataSheet%2fDS100906B(IXFT-FH--FK32N100X-HV).pdf
IXFK32N100X
Виробник: IXYS
Description: MOSFET N-CH 1000V 32A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 16A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 6V @ 4mA
Supplier Device Package: TO-264
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4075 pF @ 25 V
на замовлення 701 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1445.35 грн
25+ 1153.79 грн
100+ 1081.66 грн
500+ 866.22 грн
S6X8BBS3RP media?resourcetype=datasheets&itemid=c9e0eab7-2106-4a7f-8abe-0b74489ab8d7&filename=littelfuse-thyristor-sxx8bbs-datasheet
S6X8BBS3RP
Виробник: IXYS
Description: 600V SENSITIVE SCR IN SOT89 PACK
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 10 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10A, 12A
Current - On State (It (AV)) (Max): 510 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 5 µA
Supplier Device Package: SOT-23-3
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 600 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+14.34 грн
6000+ 13.11 грн
9000+ 12.17 грн
Мінімальне замовлення: 3000
S6X8BBS3RP media?resourcetype=datasheets&itemid=c9e0eab7-2106-4a7f-8abe-0b74489ab8d7&filename=littelfuse-thyristor-sxx8bbs-datasheet
S6X8BBS3RP
Виробник: IXYS
Description: 600V SENSITIVE SCR IN SOT89 PACK
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 10 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10A, 12A
Current - On State (It (AV)) (Max): 510 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 5 µA
Supplier Device Package: SOT-23-3
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 600 V
на замовлення 9055 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
7+42.76 грн
10+ 35 грн
100+ 24.34 грн
500+ 17.84 грн
1000+ 14.5 грн
Мінімальне замовлення: 7
DMA30P1200HB Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fDMA30P1200HB.pdf
Виробник: IXYS
Description: DIODE GEN PURP 1.2KV 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 11pF @ 400V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 (IXTH)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
товар відсутній
MKH17RP650DCGL-TUB
Виробник: IXYS
Description: MKH17RP650DCGLB-TUB
Packaging: Tube
Part Status: Active
товар відсутній
MKH24I650HR
Виробник: IXYS
Description: DISCMSFT NCHSUPRJUNCCFD-CLS ISO2
Packaging: Tube
Part Status: Active
товар відсутній
IXFP13N60X3
Виробник: IXYS
Description: DISCRETE MOSFET 13A 600V X3 TO22
Packaging: Tube
Part Status: Active
товар відсутній
IXFY13N60X3
Виробник: IXYS
Description: DISCRETE MOSFET 13A 600V X3 TO25
Packaging: Tube
Part Status: Active
товар відсутній
IXFX110N65X3
Виробник: IXYS
Description: DISCRETE MOSFET 110A 650V X3 PLU
Packaging: Tube
Part Status: Active
товар відсутній
IXFN110N65X3
Виробник: IXYS
Description: DISCRETE MOSFET 110A 650V X3 SOT
Packaging: Tube
Part Status: Active
товар відсутній
IXFK110N65X3
Виробник: IXYS
Description: DISCRETE MOSFET 110A 650V X3 TO2
Packaging: Tube
Part Status: Active
товар відсутній
IXFP12N65X3
Виробник: IXYS
Description: DISCRETE MOSFET 12A 650V X3 TO22
Packaging: Tube
Part Status: Active
товар відсутній
IXFY12N65X3
Виробник: IXYS
Description: DISCRETE MOSFET 12A 650V X3 TO25
Packaging: Tube
Part Status: Active
товар відсутній
S6X8TS3RP littelfuse_thyristor_sxx8xsx_datasheet.pdf.pdf
Виробник: IXYS
Description: 600V SENSITIVE SCR IN SOT223 PAC
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 10A
Current - On State (It (AV)) (Max): 510 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 3 µA
Supplier Device Package: SOT-23-3
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 800 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1000+22.53 грн
2000+ 19.66 грн
Мінімальне замовлення: 1000
S6X8TS3RP littelfuse_thyristor_sxx8xsx_datasheet.pdf.pdf
Виробник: IXYS
Description: 600V SENSITIVE SCR IN SOT223 PAC
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 10A
Current - On State (It (AV)) (Max): 510 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 3 µA
Supplier Device Package: SOT-23-3
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 800 V
на замовлення 3100 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+51.31 грн
10+ 43.51 грн
100+ 33.33 грн
500+ 24.73 грн
Мінімальне замовлення: 6
CNA30E2200FB Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCNA30E2200FB.pdf
Виробник: IXYS
Description: SCR 2.2KV 47A I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -10°C ~ 70°C (TJ)
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 200A
Current - On State (It (AV)) (Max): 30 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Voltage - On State (Vtm) (Max): 3 V
Current - Off State (Max): 50 µA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Active
Current - On State (It (RMS)) (Max): 47 A
Voltage - Off State: 2.2 kV
товар відсутній
LGD8201TH
Виробник: IXYS
Description: DPAK, IGBT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.9V @ 4.5V, 20A
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 440 V
Current - Collector Pulsed (Icm): 50 A
Power - Max: 125 W
товар відсутній
LGB8204ATH
LGB8204ATH
Виробник: IXYS
Description: D2PAK, IGBT3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 2V @ 4.5V, 10A
Supplier Device Package: D2PAK
Part Status: Active
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 430 V
Current - Collector Pulsed (Icm): 50 A
Power - Max: 115 W
товар відсутній
LST3205EL2CT2
Виробник: IXYS
Description: THERMALLY PROTECTED MOV
Packaging: Bulk
Part Status: Active
товар відсутній
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