| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
| IXKH47N60CC3 | IXYS |
Description: MOSFET N-CH 600V 47A TO247AD Packaging: Bulk |
товар відсутній |
||||||||
| IXFH60N20F | IXYS |
Description: MOSFET N-CH 60A TO247 Packaging: Bulk |
товар відсутній |
||||||||
| IXFT60N20F | IXYS |
Description: MOSFET N-CH 60A TO268 Packaging: Bulk |
товар відсутній |
||||||||
| IXFT60N20 | IXYS |
Description: MOSFET N-CH 60A TO268 Packaging: Bulk |
товар відсутній |
||||||||
| IXFP12N65X2A | IXYS |
Description: MOSFET N-CH TO220 Packaging: Bulk |
товар відсутній |
||||||||
 |
MKE38RK600DFEL-TUB | IXYS |
 Description: MOSFET N-CH 600V 50A SMPDPackaging: Tube Package / Case: 9-SMD Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V Vgs(th) (Max) @ Id: 3.5V @ 3mA Supplier Device Package: ISOPLUS-SMPD™.B Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V |
товар відсутній |
|||||||
| IXFT21N50 | IXYS |
Description: MOSFET N-CH 21A TO268 Packaging: Bulk |
товар відсутній |
||||||||
| IXFT21N50F | IXYS |
Description: MOSFET N-CH 21A TO268 Packaging: Bulk |
товар відсутній |
||||||||
| IXTU4N60P | IXYS |
Description: MOSFET N-CH TO251 Packaging: Bulk |
товар відсутній |
||||||||
| IXKK85N60CC3 | IXYS |
Description: MOSFET N-CH 600V 85A TO264A Packaging: Bulk |
товар відсутній |
||||||||
| N2825TJ450 | IXYS |
Description: SCR 4.5KV 5520A W81 Packaging: Box Package / Case: TO-200AF Mounting Type: Chassis Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Current - Hold (Ih) (Max): 1 A Current - Gate Trigger (Igt) (Max): 300 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 41000A @ 50Hz Current - On State (It (AV)) (Max): 2825 A Voltage - Gate Trigger (Vgt) (Max): 3 V Voltage - On State (Vtm) (Max): 3.37 V Current - Off State (Max): 250 mA Supplier Device Package: W81 Current - On State (It (RMS)) (Max): 5520 A Voltage - Off State: 4.5 kV |
товар відсутній |
||||||||
| W1185LC450 | IXYS |
Description: DIODE GEN PURP 4.5KV 1185A W4 Packaging: Box Package / Case: DO-200AB, B-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1185A Supplier Device Package: W4 Operating Temperature - Junction: -55°C ~ 160°C Voltage - DC Reverse (Vr) (Max): 4500 V Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 2420 A Current - Reverse Leakage @ Vr: 30 mA @ 4500 V |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
|
|||||||
| IXFK40N50Q2 | IXYS |
Description: MOSFET N-CH 40A TO264 Packaging: Bulk |
товар відсутній |
||||||||
| IXFM12N90Q | IXYS |
Description: MOSFET N-CH 900V 12A TO-204AA Packaging: Bulk |
товар відсутній |
||||||||
| IXTY26P10T-TRL | IXYS |
Description: MOSFET P-CH 100V 26A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 13A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3820 pF @ 25 V |
товар відсутній |
||||||||
| IXFX400N15X3 | IXYS |
Description: MOSFET N-CH 150V 400A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 200A, 10V Power Dissipation (Max): 1250W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 8mA Supplier Device Package: PLUS247™-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 365 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23700 pF @ 25 V |
товар відсутній |
||||||||
| IX526119 | IXYS |
Description: ITF40PF1200DHGTLB-TRR Packaging: Tape & Reel (TR) |
на замовлення 200 шт: термін постачання 21-31 дні (днів) |
|
|||||||
| IX526112 | IXYS |
Description: ITF40PF1200DHGTLB-TUB Packaging: Tube |
товар відсутній |
||||||||
 |
DPG30IM300PC-TUB | IXYS |
Description: DIODE GEN PURP 300V 30A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 42pF @ 150V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 30 A Current - Reverse Leakage @ Vr: 1 µA @ 300 V |
товар відсутній |
|||||||
|
|
DPG30IM400PC-TUB | IXYS |
Description: DIODE GEN PURP 400V 30A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Standard Capacitance @ Vr, F: 32pF @ 200V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 30 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
товар відсутній |
|||||||
|
|
DPG30IM300PC-TRL | IXYS |
Description: DIODE GEN PURP 300V 30A TO263AA Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 42pF @ 150V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-263AA Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 30 A Current - Reverse Leakage @ Vr: 1 µA @ 300 V |
товар відсутній |
|||||||
|
|
DPG30IM400PC-TRL | IXYS |
Description: DIODE GEN PURP 400V 30A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Standard Capacitance @ Vr, F: 32pF @ 200V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 30 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
товар відсутній |
|||||||
| DPG30I600PM | IXYS |
Description: DIODE GP 600V 15A TO220ACFP Packaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 26pF @ 400V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TO-220ACFP Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.52 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 600 V |
товар відсутній |
||||||||
| IXTP03N90P | IXYS |
Description: MOSFET N-CH TO220AB Packaging: Bulk |
товар відсутній |
||||||||
| IXTY03N90PHV | IXYS |
Description: MOSFET N-CH TO252AA Packaging: Bulk |
товар відсутній |
||||||||
| IXFH28N50F | IXYS |
Description: MOSFET N-CH 28A TO247 Packaging: Bulk |
товар відсутній |
||||||||
| IXFT28N50F | IXYS |
Description: MOSFET N-CH 28A TO268 Packaging: Bulk |
товар відсутній |
||||||||
| IXFT40N30 | IXYS |
Description: MOSFET N-CH 40A TO268 Packaging: Bulk |
товар відсутній |
||||||||
| IXTA36N30P-PDP | IXYS |
Description: MOSFET N-CH TO263 Packaging: Bulk |
товар відсутній |
||||||||
 |
IXFN55N120SK | IXYS |
Description: SIC AND MULTICHIP DISCRETE Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 40A, 15V Vgs(th) (Max) @ Id: 3.6V @ 12mA Supplier Device Package: SOT-227B Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +15V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 1000 V |
на замовлення 188 шт: термін постачання 21-31 дні (днів) |
|
||||||
| IXTA340N04T4-TRL | IXYS |
Description: MOSFET N-CH TO263 Packaging: Tape & Reel (TR) |
товар відсутній |
||||||||
| IXTS01N90P-89 | IXYS |
Description: MOSFET N-CH SMD Packaging: Bulk |
товар відсутній |
||||||||
| IXTS01N90P-223 | IXYS |
Description: MOSFET N-CH SMD Packaging: Bulk |
товар відсутній |
||||||||
|
|
DMA10P1600PZ-TUB | IXYS |
Description: DIODE GEN PURP 1.6KV 10A TO263HV Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 4pF @ 400V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-263HV Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 1600 V |
товар відсутній |
|||||||
|
|
DMA10P1600PZ-TRL | IXYS |
Description: DIODE GEN PURP 1.6KV 10A TO263HV Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 4pF @ 400V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-263HV Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 1600 V |
товар відсутній |
|||||||
|
|
DMA10IM1600PZ-TUB | IXYS |
Description: DIODE GEN PURP 1.6KV 10A TO263HV Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 4pF @ 400V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-263HV Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 1600 V |
товар відсутній |
|||||||
|
|
DMA30IM1600PZ-TUB | IXYS |
Description: DIODE GEN PURP 1.6KV 30A TO263HV Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 10pF @ 400V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-263HV Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A Current - Reverse Leakage @ Vr: 40 µA @ 1600 V |
товар відсутній |
|||||||
|
|
DMA10IM1600PZ-TRL | IXYS |
Description: DIODE GEN PURP 1.6KV 10A TO263HV Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 4pF @ 400V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-263HV Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 1600 V |
товар відсутній |
|||||||
|
|
DMA30IM1600PZ-TRL | IXYS |
Description: DIODE GEN PURP 1.6KV 30A TO263HV Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 10pF @ 400V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-263HV Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A Current - Reverse Leakage @ Vr: 40 µA @ 1600 V |
товар відсутній |
|||||||
| CMA50E1600TZ-TRL | IXYS |
Description: SCR 1.6KV 79A TO268AA Packaging: Tape & Reel (TR) Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 150°C (TJ) Current - Hold (Ih) (Max): 100 mA Current - Gate Trigger (Igt) (Max): 50 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 595A Current - On State (It (AV)) (Max): 50 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Voltage - On State (Vtm) (Max): 1.3 V Supplier Device Package: TO-268AA (D3Pak-HV) Current - On State (It (RMS)) (Max): 79 A Voltage - Off State: 1.6 kV |
товар відсутній |
||||||||
| CMA50E1600TZ-TUB | IXYS |
Description: SCR 1.6KV 79A TO268AA Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 150°C (TJ) Current - Hold (Ih) (Max): 100 mA Current - Gate Trigger (Igt) (Max): 50 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 595A Current - On State (It (AV)) (Max): 50 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Voltage - On State (Vtm) (Max): 1.3 V Supplier Device Package: TO-268AA (D3Pak-HV) Current - On State (It (RMS)) (Max): 79 A Voltage - Off State: 1.6 kV |
на замовлення 750 шт: термін постачання 21-31 дні (днів) |
|
|||||||
| IXFK1801 | IXYS |
Description: MOSFET N-CH 18A TO264 Packaging: Bulk |
товар відсутній |
||||||||
| MITA300RF1700P-PC | IXYS |
Description: IGBT MOD MITA300RF1700PTED-PC Packaging: Box |
товар відсутній |
||||||||
| IXTM13N80 | IXYS |
Description: MOSFET N-CH TO-3 Packaging: Bulk |
товар відсутній |
||||||||
 |
IRFP264 | IXYS |
Description: MOSFET N-CH 250V 38A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 23A, 10V Power Dissipation (Max): 280W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247 (IXTH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V |
товар відсутній |
|||||||
| N2154JK020 | IXYS |
Description: SCR 200V 4190A WP1 Packaging: Box Package / Case: TO-200AB, B-PuK Mounting Type: Chassis Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 140°C Current - Hold (Ih) (Max): 1 A Current - Gate Trigger (Igt) (Max): 300 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 25000A @ 50Hz Current - On State (It (AV)) (Max): 2154 A Voltage - Gate Trigger (Vgt) (Max): 3 V Voltage - On State (Vtm) (Max): 1.58 V Current - Off State (Max): 100 mA Supplier Device Package: WP1 Current - On State (It (RMS)) (Max): 4190 A Voltage - Off State: 200 V |
товар відсутній |
||||||||
| N2154JK040 | IXYS |
Description: SCR 400V 4190A WP1 Packaging: Box Package / Case: TO-200AB, B-PuK Mounting Type: Chassis Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 140°C Current - Hold (Ih) (Max): 1 A Current - Gate Trigger (Igt) (Max): 300 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 25000A @ 50Hz Current - On State (It (AV)) (Max): 2154 A Voltage - Gate Trigger (Vgt) (Max): 3 V Voltage - On State (Vtm) (Max): 1.58 V Current - Off State (Max): 100 mA Supplier Device Package: WP1 Current - On State (It (RMS)) (Max): 4190 A Voltage - Off State: 400 V |
товар відсутній |
||||||||
| N2154JK060 | IXYS |
Description: SCR 600V 4190A WP1 Packaging: Box Package / Case: TO-200AB, B-PuK Mounting Type: Chassis Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 140°C Current - Hold (Ih) (Max): 1 A Current - Gate Trigger (Igt) (Max): 300 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 25000A @ 50Hz Current - On State (It (AV)) (Max): 2154 A Voltage - Gate Trigger (Vgt) (Max): 3 V Voltage - On State (Vtm) (Max): 1.58 V Current - Off State (Max): 100 mA Supplier Device Package: WP1 Current - On State (It (RMS)) (Max): 4190 A Voltage - Off State: 600 V |
товар відсутній |
||||||||
| N1806QK160 | IXYS |
Description: SCR 1.6KV 3571A WP2 Packaging: Box Package / Case: TO-200AB, B-PuK Mounting Type: Chassis Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Current - Hold (Ih) (Max): 1 A Current - Gate Trigger (Igt) (Max): 300 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 21000A @ 50Hz Current - On State (It (AV)) (Max): 1806 A Voltage - Gate Trigger (Vgt) (Max): 3 V Voltage - On State (Vtm) (Max): 2.4 V Current - Off State (Max): 100 mA Supplier Device Package: WP2 Current - On State (It (RMS)) (Max): 3571 A Voltage - Off State: 1.6 kV |
товар відсутній |
||||||||
| N1806QK180 | IXYS |
Description: SCR 1.8KV 3571A WP2 Packaging: Box Package / Case: TO-200AB, B-PuK Mounting Type: Chassis Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Current - Hold (Ih) (Max): 1 A Current - Gate Trigger (Igt) (Max): 300 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 21000A @ 50Hz Current - On State (It (AV)) (Max): 1806 A Voltage - Gate Trigger (Vgt) (Max): 3 V Voltage - On State (Vtm) (Max): 2.4 V Current - Off State (Max): 100 mA Supplier Device Package: WP2 Current - On State (It (RMS)) (Max): 3571 A Voltage - Off State: 1.8 kV |
товар відсутній |
||||||||
| N1651QK200 | IXYS |
Description: SCR 2KV 3253A WP2 Packaging: Box Package / Case: TO-200AB, B-PuK Mounting Type: Chassis Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Current - Hold (Ih) (Max): 1 A Current - Gate Trigger (Igt) (Max): 300 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 19000A @ 50Hz Current - On State (It (AV)) (Max): 1651 A Voltage - Gate Trigger (Vgt) (Max): 3 V Voltage - On State (Vtm) (Max): 2.65 V Current - Off State (Max): 100 mA Supplier Device Package: WP2 Current - On State (It (RMS)) (Max): 3253 A Voltage - Off State: 2 kV |
товар відсутній |
||||||||
| N1449QL220 | IXYS |
Description: SCR 2.2KV 2790A WP6 Packaging: Box Package / Case: TO-200AB, B-PuK Mounting Type: Chassis Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Current - Hold (Ih) (Max): 1 A Current - Gate Trigger (Igt) (Max): 300 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 19000A @ 50Hz Current - On State (It (AV)) (Max): 1410 A Voltage - Gate Trigger (Vgt) (Max): 3 V Voltage - On State (Vtm) (Max): 2.65 V Current - Off State (Max): 100 mA Supplier Device Package: WP6 Current - On State (It (RMS)) (Max): 2790 A Voltage - Off State: 2.2 kV |
товар відсутній |
||||||||
| N1651QK220 | IXYS |
Description: SCR 2.2KV 3253A WP2 Packaging: Box Package / Case: TO-200AB, B-PuK Mounting Type: Chassis Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Current - Hold (Ih) (Max): 1 A Current - Gate Trigger (Igt) (Max): 300 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 19000A @ 50Hz Current - On State (It (AV)) (Max): 1651 A Voltage - Gate Trigger (Vgt) (Max): 3 V Voltage - On State (Vtm) (Max): 2.65 V Current - Off State (Max): 100 mA Supplier Device Package: WP2 Current - On State (It (RMS)) (Max): 3253 A Voltage - Off State: 2.2 kV |
товар відсутній |
||||||||
 |
MCNA150PD2200YB | IXYS |
Description: BIPOLAR MODULE - THYRISTOR Y4-M Packaging: Box Package / Case: Y4-M6 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 140°C (TJ) Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 4300A, 4650A Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 150 A Voltage - Gate Trigger (Vgt) (Max): 2 V Current - On State (It (RMS)) (Max): 235 A Voltage - Off State: 2.2 kV |
товар відсутній |
|||||||
| IXTP60N020T | IXYS |
Description: MOSFET N-CH TO220AB Packaging: Bulk |
товар відсутній |
||||||||
| MTI200WX75GD-SMD | IXYS |
Description: MOSFET 6N-CH 75V 255A ISOPLUS Packaging: Tube Package / Case: ISOPLUS-DIL™ Mounting Type: Surface Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 255A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 38V Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V Vgs(th) (Max) @ Id: 3.8V @ 275µA Supplier Device Package: ISOPLUS-DIL™ |
на замовлення 819 шт: термін постачання 21-31 дні (днів) |
|
|||||||
| IXFK62N25 | IXYS |
Description: MOSFET N-CH 62A TO264 Packaging: Bulk |
товар відсутній |
||||||||
| MTI145WX100GD-SMD | IXYS |
Description: MOSFET 6N-CH 100V 190A ISOPLUS Packaging: Tube Package / Case: ISOPLUS-DIL™ Mounting Type: Surface Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 190A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 11100pF @ 50V Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V Vgs(th) (Max) @ Id: 3.5V @ 275µA Supplier Device Package: ISOPLUS-DIL™ |
товар відсутній |
||||||||
| IXFX220N15P | IXYS |
Description: MOSFET N-CH 220A PLUS247-3 Packaging: Bulk |
товар відсутній |
||||||||
| IXTA1970-TRL | IXYS |
Description: MOSFET N-CH TO263 Packaging: Tape & Reel (TR) |
товар відсутній |
| MKE38RK600DFEL-TUB |
|
Виробник: IXYS
Description: MOSFET N-CH 600V 50A SMPD
Packaging: Tube
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: ISOPLUS-SMPD™.B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
Description: MOSFET N-CH 600V 50A SMPD
Packaging: Tube
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: ISOPLUS-SMPD™.B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
товар відсутній
| N2825TJ450 |
|
Виробник: IXYS
Description: SCR 4.5KV 5520A W81
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 41000A @ 50Hz
Current - On State (It (AV)) (Max): 2825 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 3.37 V
Current - Off State (Max): 250 mA
Supplier Device Package: W81
Current - On State (It (RMS)) (Max): 5520 A
Voltage - Off State: 4.5 kV
Description: SCR 4.5KV 5520A W81
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 41000A @ 50Hz
Current - On State (It (AV)) (Max): 2825 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 3.37 V
Current - Off State (Max): 250 mA
Supplier Device Package: W81
Current - On State (It (RMS)) (Max): 5520 A
Voltage - Off State: 4.5 kV
товар відсутній
| W1185LC450 |
|
Виробник: IXYS
Description: DIODE GEN PURP 4.5KV 1185A W4
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1185A
Supplier Device Package: W4
Operating Temperature - Junction: -55°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 2420 A
Current - Reverse Leakage @ Vr: 30 mA @ 4500 V
Description: DIODE GEN PURP 4.5KV 1185A W4
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1185A
Supplier Device Package: W4
Operating Temperature - Junction: -55°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 2420 A
Current - Reverse Leakage @ Vr: 30 mA @ 4500 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 9585.12 грн |
| IXTY26P10T-TRL |
Виробник: IXYS
Description: MOSFET P-CH 100V 26A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 13A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3820 pF @ 25 V
Description: MOSFET P-CH 100V 26A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 13A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3820 pF @ 25 V
товар відсутній
| IXFX400N15X3 |
|
Виробник: IXYS
Description: MOSFET N-CH 150V 400A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 200A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 365 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23700 pF @ 25 V
Description: MOSFET N-CH 150V 400A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 200A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 365 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23700 pF @ 25 V
товар відсутній
| IX526119 |
на замовлення 200 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 1299.49 грн |
| DPG30IM300PC-TUB |
|
Виробник: IXYS
Description: DIODE GEN PURP 300V 30A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 42pF @ 150V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
Description: DIODE GEN PURP 300V 30A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 42pF @ 150V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
товар відсутній
| DPG30IM400PC-TUB |
|
Виробник: IXYS
Description: DIODE GEN PURP 400V 30A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 200V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Description: DIODE GEN PURP 400V 30A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 200V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
товар відсутній
| DPG30IM300PC-TRL |
|
Виробник: IXYS
Description: DIODE GEN PURP 300V 30A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 42pF @ 150V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
Description: DIODE GEN PURP 300V 30A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 42pF @ 150V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
товар відсутній
| DPG30IM400PC-TRL |
|
Виробник: IXYS
Description: DIODE GEN PURP 400V 30A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 200V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Description: DIODE GEN PURP 400V 30A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 200V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
товар відсутній
| DPG30I600PM |
|
Виробник: IXYS
Description: DIODE GP 600V 15A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 26pF @ 400V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.52 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Description: DIODE GP 600V 15A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 26pF @ 400V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.52 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
товар відсутній
| IXFN55N120SK |
Виробник: IXYS
Description: SIC AND MULTICHIP DISCRETE
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 40A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 12mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 1000 V
Description: SIC AND MULTICHIP DISCRETE
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 40A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 12mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 1000 V
на замовлення 188 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4482.25 грн |
| 10+ | 3911.32 грн |
| 100+ | 3506.73 грн |
| IXTA340N04T4-TRL |
товар відсутній
| DMA10P1600PZ-TUB |
|
Виробник: IXYS
Description: DIODE GEN PURP 1.6KV 10A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
Description: DIODE GEN PURP 1.6KV 10A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
товар відсутній
| DMA10P1600PZ-TRL |
|
Виробник: IXYS
Description: DIODE GEN PURP 1.6KV 10A TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
Description: DIODE GEN PURP 1.6KV 10A TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
товар відсутній
| DMA10IM1600PZ-TUB |
|
Виробник: IXYS
Description: DIODE GEN PURP 1.6KV 10A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
Description: DIODE GEN PURP 1.6KV 10A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
товар відсутній
| DMA30IM1600PZ-TUB |
|
Виробник: IXYS
Description: DIODE GEN PURP 1.6KV 30A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
Description: DIODE GEN PURP 1.6KV 30A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
товар відсутній
| DMA10IM1600PZ-TRL |
|
Виробник: IXYS
Description: DIODE GEN PURP 1.6KV 10A TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
Description: DIODE GEN PURP 1.6KV 10A TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
товар відсутній
| DMA30IM1600PZ-TRL |
|
Виробник: IXYS
Description: DIODE GEN PURP 1.6KV 30A TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
Description: DIODE GEN PURP 1.6KV 30A TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
товар відсутній
| CMA50E1600TZ-TRL |
|
Виробник: IXYS
Description: SCR 1.6KV 79A TO268AA
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 595A
Current - On State (It (AV)) (Max): 50 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.3 V
Supplier Device Package: TO-268AA (D3Pak-HV)
Current - On State (It (RMS)) (Max): 79 A
Voltage - Off State: 1.6 kV
Description: SCR 1.6KV 79A TO268AA
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 595A
Current - On State (It (AV)) (Max): 50 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.3 V
Supplier Device Package: TO-268AA (D3Pak-HV)
Current - On State (It (RMS)) (Max): 79 A
Voltage - Off State: 1.6 kV
товар відсутній
| CMA50E1600TZ-TUB |
|
Виробник: IXYS
Description: SCR 1.6KV 79A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 595A
Current - On State (It (AV)) (Max): 50 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.3 V
Supplier Device Package: TO-268AA (D3Pak-HV)
Current - On State (It (RMS)) (Max): 79 A
Voltage - Off State: 1.6 kV
Description: SCR 1.6KV 79A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 595A
Current - On State (It (AV)) (Max): 50 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.3 V
Supplier Device Package: TO-268AA (D3Pak-HV)
Current - On State (It (RMS)) (Max): 79 A
Voltage - Off State: 1.6 kV
на замовлення 750 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 370.05 грн |
| MITA300RF1700P-PC |
|
товар відсутній
| IRFP264 |
|
Виробник: IXYS
Description: MOSFET N-CH 250V 38A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 23A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Description: MOSFET N-CH 250V 38A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 23A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
товар відсутній
| N2154JK020 |
|
Виробник: IXYS
Description: SCR 200V 4190A WP1
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 140°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25000A @ 50Hz
Current - On State (It (AV)) (Max): 2154 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.58 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP1
Current - On State (It (RMS)) (Max): 4190 A
Voltage - Off State: 200 V
Description: SCR 200V 4190A WP1
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 140°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25000A @ 50Hz
Current - On State (It (AV)) (Max): 2154 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.58 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP1
Current - On State (It (RMS)) (Max): 4190 A
Voltage - Off State: 200 V
товар відсутній
| N2154JK040 |
|
Виробник: IXYS
Description: SCR 400V 4190A WP1
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 140°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25000A @ 50Hz
Current - On State (It (AV)) (Max): 2154 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.58 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP1
Current - On State (It (RMS)) (Max): 4190 A
Voltage - Off State: 400 V
Description: SCR 400V 4190A WP1
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 140°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25000A @ 50Hz
Current - On State (It (AV)) (Max): 2154 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.58 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP1
Current - On State (It (RMS)) (Max): 4190 A
Voltage - Off State: 400 V
товар відсутній
| N2154JK060 |
|
Виробник: IXYS
Description: SCR 600V 4190A WP1
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 140°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25000A @ 50Hz
Current - On State (It (AV)) (Max): 2154 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.58 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP1
Current - On State (It (RMS)) (Max): 4190 A
Voltage - Off State: 600 V
Description: SCR 600V 4190A WP1
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 140°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25000A @ 50Hz
Current - On State (It (AV)) (Max): 2154 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.58 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP1
Current - On State (It (RMS)) (Max): 4190 A
Voltage - Off State: 600 V
товар відсутній
| N1806QK160 |
|
Виробник: IXYS
Description: SCR 1.6KV 3571A WP2
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 21000A @ 50Hz
Current - On State (It (AV)) (Max): 1806 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.4 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP2
Current - On State (It (RMS)) (Max): 3571 A
Voltage - Off State: 1.6 kV
Description: SCR 1.6KV 3571A WP2
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 21000A @ 50Hz
Current - On State (It (AV)) (Max): 1806 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.4 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP2
Current - On State (It (RMS)) (Max): 3571 A
Voltage - Off State: 1.6 kV
товар відсутній
| N1806QK180 |
|
Виробник: IXYS
Description: SCR 1.8KV 3571A WP2
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 21000A @ 50Hz
Current - On State (It (AV)) (Max): 1806 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.4 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP2
Current - On State (It (RMS)) (Max): 3571 A
Voltage - Off State: 1.8 kV
Description: SCR 1.8KV 3571A WP2
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 21000A @ 50Hz
Current - On State (It (AV)) (Max): 1806 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.4 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP2
Current - On State (It (RMS)) (Max): 3571 A
Voltage - Off State: 1.8 kV
товар відсутній
| N1651QK200 |
|
Виробник: IXYS
Description: SCR 2KV 3253A WP2
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19000A @ 50Hz
Current - On State (It (AV)) (Max): 1651 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.65 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP2
Current - On State (It (RMS)) (Max): 3253 A
Voltage - Off State: 2 kV
Description: SCR 2KV 3253A WP2
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19000A @ 50Hz
Current - On State (It (AV)) (Max): 1651 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.65 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP2
Current - On State (It (RMS)) (Max): 3253 A
Voltage - Off State: 2 kV
товар відсутній
| N1449QL220 |
|
Виробник: IXYS
Description: SCR 2.2KV 2790A WP6
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19000A @ 50Hz
Current - On State (It (AV)) (Max): 1410 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.65 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP6
Current - On State (It (RMS)) (Max): 2790 A
Voltage - Off State: 2.2 kV
Description: SCR 2.2KV 2790A WP6
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19000A @ 50Hz
Current - On State (It (AV)) (Max): 1410 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.65 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP6
Current - On State (It (RMS)) (Max): 2790 A
Voltage - Off State: 2.2 kV
товар відсутній
| N1651QK220 |
|
Виробник: IXYS
Description: SCR 2.2KV 3253A WP2
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19000A @ 50Hz
Current - On State (It (AV)) (Max): 1651 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.65 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP2
Current - On State (It (RMS)) (Max): 3253 A
Voltage - Off State: 2.2 kV
Description: SCR 2.2KV 3253A WP2
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19000A @ 50Hz
Current - On State (It (AV)) (Max): 1651 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.65 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP2
Current - On State (It (RMS)) (Max): 3253 A
Voltage - Off State: 2.2 kV
товар відсутній
| MCNA150PD2200YB |
|
Виробник: IXYS
Description: BIPOLAR MODULE - THYRISTOR Y4-M
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4300A, 4650A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 150 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 235 A
Voltage - Off State: 2.2 kV
Description: BIPOLAR MODULE - THYRISTOR Y4-M
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4300A, 4650A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 150 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 235 A
Voltage - Off State: 2.2 kV
товар відсутній
| MTI200WX75GD-SMD |
|
Виробник: IXYS
Description: MOSFET 6N-CH 75V 255A ISOPLUS
Packaging: Tube
Package / Case: ISOPLUS-DIL™
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 255A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 38V
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: ISOPLUS-DIL™
Description: MOSFET 6N-CH 75V 255A ISOPLUS
Packaging: Tube
Package / Case: ISOPLUS-DIL™
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 255A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 38V
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: ISOPLUS-DIL™
на замовлення 819 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 2385.69 грн |
| MTI145WX100GD-SMD |
Виробник: IXYS
Description: MOSFET 6N-CH 100V 190A ISOPLUS
Packaging: Tube
Package / Case: ISOPLUS-DIL™
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 11100pF @ 50V
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 275µA
Supplier Device Package: ISOPLUS-DIL™
Description: MOSFET 6N-CH 100V 190A ISOPLUS
Packaging: Tube
Package / Case: ISOPLUS-DIL™
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 11100pF @ 50V
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 275µA
Supplier Device Package: ISOPLUS-DIL™
товар відсутній
| IXTA1970-TRL |
товар відсутній