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IXTP28P065T IXTP28P065T IXYS littelfuse-discrete-mosfets-ixt-28p065t-datasheet?assetguid=cc1f3fbc-381e-4c61-a84b-94c3193be3b7 Description: MOSFET P-CH 65V 28A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 14A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
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IXTY14N60X2 IXTY14N60X2 IXYS ixty2n65x2.pdf Description: MOSFET N-CH 600V 14A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V
на замовлення 1923 шт:
термін постачання 21-31 дні (днів)
1+398.59 грн
70+193.82 грн
140+177.73 грн
560+143.43 грн
1050+140.18 грн
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IXFA14N60P-TRL IXFA14N60P-TRL IXYS littelfuse-discrete-mosfets-ixf-14n60p-datasheet?assetguid=9b66dd8c-b998-4e01-b450-afadebd1db30 Description: MOSFET N-CH 600V 14A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 7A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
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IXFX520N075T2 IXFX520N075T2 IXYS Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXF-520N075T2-Datasheet.PDF?assetguid=90615EDF-C082-4159-945F-6CE8C6ED0F56 Description: MOSFET N-CH 75V 520A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 520A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 41000 pF @ 25 V
на замовлення 354 шт:
термін постачання 21-31 дні (днів)
1+1122.66 грн
30+669.59 грн
120+582.78 грн
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IXTK60N50L2 IXTK60N50L2 IXYS DS100087AIXTKTX60N50L2.pdf Description: MOSFET N-CH 500V 60A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 610 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V
на замовлення 523 шт:
термін постачання 21-31 дні (днів)
1+2415.13 грн
25+1566.99 грн
100+1535.53 грн
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IXFN64N50P IXFN64N50P IXYS Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFN64N50P-Datasheet.PDF?assetguid=C3F76E7E-02FB-4FB9-BB27-8D8D85DFFDE8 description Description: MOSFET N-CH 500V 61A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 32A, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V
на замовлення 1040 шт:
термін постачання 21-31 дні (днів)
1+1995.32 грн
10+1409.42 грн
100+1209.30 грн
В кошику  од. на суму  грн.
IXTQ88N30P IXTQ88N30P IXYS media?resourcetype=datasheets&itemid=9217C088-31F7-40FF-AEF6-3D755C2C3250&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXT-88N30P-Datasheet.PDF Description: MOSFET N-CH 300V 88A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 44A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
на замовлення 720 шт:
термін постачання 21-31 дні (днів)
1+900.17 грн
30+526.36 грн
120+451.71 грн
510+410.44 грн
В кошику  од. на суму  грн.
IXFH270N06T3 IXFH270N06T3 IXYS media?resourcetype=datasheets&itemid=389149E3-6BDB-45C1-88B8-C8699DB13435&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXF-270N06T3-Datasheet.PDF Description: MOSFET N-CH 60V 270A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
на замовлення 303 шт:
термін постачання 21-31 дні (днів)
30+263.79 грн
60+237.87 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
IXCP10M45S IXCP10M45S IXYS Littelfuse-Power-Semi-IXCP10M45S-IXCY10M45s?assetguid=731077FA-A99E-41C1-BC82-960F7ED0C52C Description: IC CURRENT REGULATOR TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Function: Current Regulator
Voltage - Input: 450V
Current - Output: 100mA
Operating Temperature: -55°C ~ 150°C
Supplier Device Package: TO-220-3
товару немає в наявності
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IXTA6N50D2-TRL IXTA6N50D2-TRL IXYS littelfuse-discrete-mosfets-ixt-6n50-datasheet?assetguid=55bbd511-42cb-4098-a3a2-75365a398f37 Description: MOSFET N-CH 500V 6A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3A, 0V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
товару немає в наявності
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IXTA6N50D2-TRL IXTA6N50D2-TRL IXYS littelfuse-discrete-mosfets-ixt-6n50-datasheet?assetguid=55bbd511-42cb-4098-a3a2-75365a398f37 Description: MOSFET N-CH 500V 6A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3A, 0V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
на замовлення 280 шт:
термін постачання 21-31 дні (днів)
1+705.99 грн
10+469.23 грн
100+388.27 грн
В кошику  од. на суму  грн.
IXTP08N100D2 IXTP08N100D2 IXYS littelfuse-discrete-mosfets-ixt-08n100-datasheet?assetguid=5f3f8653-b9a5-4c21-928a-8f26a664dbdc Description: MOSFET N-CH 1000V 800MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-220-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
на замовлення 882 шт:
термін постачання 21-31 дні (днів)
2+262.58 грн
50+127.78 грн
100+115.65 грн
500+88.60 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTA3N50D2 IXTA3N50D2 IXYS littelfuse-discrete-mosfets-ixt-3n50-datasheet?assetguid=7d9bbc87-6f24-48dc-8dcf-2bc5554e3a93 Description: MOSFET N-CH 500V 3A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 0V
Power Dissipation (Max): 125W (Tc)
Supplier Device Package: TO-263AA
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 25 V
на замовлення 1346 шт:
термін постачання 21-31 дні (днів)
1+397.81 грн
50+202.42 грн
100+184.95 грн
500+144.85 грн
1000+139.96 грн
В кошику  од. на суму  грн.
IXTP6N100D2 IXTP6N100D2 IXYS littelfuse-discrete-mosfets-ixt-6n100-datasheet?assetguid=c49ba42b-7a18-44bb-be04-da2e6496f67b Description: MOSFET N-CH 1000V 6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 0V
Power Dissipation (Max): 300W (Tc)
Supplier Device Package: TO-220-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
на замовлення 322 шт:
термін постачання 21-31 дні (днів)
1+745.30 грн
50+399.33 грн
100+368.70 грн
В кошику  од. на суму  грн.
IXTH6N100D2 IXTH6N100D2 IXYS littelfuse-discrete-mosfets-ixt-6n100-datasheet?assetguid=c49ba42b-7a18-44bb-be04-da2e6496f67b Description: MOSFET N-CH 1000V 6A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 0V
Power Dissipation (Max): 300W (Tc)
Supplier Device Package: TO-247 (IXTH)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
на замовлення 21 шт:
термін постачання 21-31 дні (днів)
1+844.35 грн
В кошику  од. на суму  грн.
IXBK64N250 IXBK64N250 IXYS littelfuse-discrete-igbts-ixb-64n250-datasheet?assetguid=6f198893-d712-49ff-908d-12cba0a8ef2b Description: IGBT 2500V 75A TO-264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 64A
Supplier Device Package: TO-264AA
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Power - Max: 735 W
на замовлення 49 шт:
термін постачання 21-31 дні (днів)
1+6151.04 грн
В кошику  од. на суму  грн.
IXTY90N055T2 IXTY90N055T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_90n055t2_datasheet.pdf?assetguid=9b1b04f2-0e89-452f-ada4-b4c85bbb26c6 Description: MOSFET N-CH 55V 90A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 25 V
на замовлення 1569 шт:
термін постачання 21-31 дні (днів)
2+211.48 грн
70+96.59 грн
140+87.49 грн
560+68.88 грн
1050+64.23 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFH90N65X3 IXFH90N65X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh90n65x3-datasheet?assetguid=d4c565e9-7fdb-4ff8-bc54-16d1603a6ce2 Description: MOSFET 90A 650V X3 TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 45A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 4mA
Supplier Device Package: TO-247 (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6080 pF @ 25 V
на замовлення 289 шт:
термін постачання 21-31 дні (днів)
1+1228.01 грн
30+737.80 грн
120+652.94 грн
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IXTA80N075L2 IXTA80N075L2 IXYS littelfuse-discrete-mosfets-ixt-80n075-datasheet?assetguid=09b664e9-c301-4232-b44a-1bb876c4d880 Description: MOSFET N-CH 75V 80A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 40A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
на замовлення 975 шт:
термін постачання 21-31 дні (днів)
1+1003.95 грн
50+559.16 грн
100+520.02 грн
500+473.24 грн
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IXTA44P15T IXTA44P15T IXYS littelfuse-discrete-mosfets-ixt-44p15t-datasheet?assetguid=7f3ca350-d79f-4e06-bce3-4b5b84d96ba2 Description: MOSFET P-CH 150V 44A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V
на замовлення 4700 шт:
термін постачання 21-31 дні (днів)
1+513.37 грн
50+267.29 грн
100+245.42 грн
500+196.26 грн
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IXFB44N100P IXFB44N100P IXYS littelfuse-discrete-mosfets-ixfb44n100p-datasheet?assetguid=84609b16-c63a-4abc-9908-c4837d35df84 Description: MOSFET N-CH 1000V 44A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 22A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS264™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
на замовлення 412 шт:
термін постачання 21-31 дні (днів)
1+2111.67 грн
25+1355.65 грн
100+1299.94 грн
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IXFK120N60X3 IXYS Description: DISCRETE MOSFET 120A 600V X3 TO2
Packaging: Tube
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IXFN120N60X3 IXYS Description: DISCRETE MOSFET 120A 600V X3 SOT
Packaging: Tube
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IXFX120N60X3 IXYS Description: DISCRETE MOSFET 120A 600V X3 PLU
Packaging: Tube
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IXTH1N450HV IXTH1N450HV IXYS DS100500DIXTTTH1N450HV.pdf Description: MOSFET N-CH 4500V 1A TO247HV
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 80Ohm @ 50mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 6V @ 250µA
Supplier Device Package: TO-247HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4500 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
на замовлення 358 шт:
термін постачання 21-31 дні (днів)
1+2924.58 грн
30+1947.81 грн
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IXTF1N450 IXTF1N450 IXYS DS100501DIXTF1N450.pdf Description: MOSFET N-CH 4500V 900MA I4PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
Rds On (Max) @ Id, Vgs: 85Ohm @ 50mA, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 250µA
Supplier Device Package: ISOPLUS i4-PAC™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
на замовлення 295 шт:
термін постачання 21-31 дні (днів)
1+6346.02 грн
25+5003.31 грн
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IXTT1N450HV IXTT1N450HV IXYS DS100500DIXTTTH1N450HV.pdf Description: MOSFET N-CH 4500V 1A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 85Ohm @ 50mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
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IXTN30N100L IXTN30N100L IXYS DS99813BIXTN30N100L.pdf Description: MOSFET N-CH 1000V 30A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 15A, 20V
Power Dissipation (Max): 800W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V
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IXTA3N150HV IXTA3N150HV IXYS littelfuse-discrete-mosfets-ixta3n150hv-datasheet?assetguid=db451462-b6d5-4e71-b2c9-e7feeb9a26ab Description: MOSFET N-CH 1500V 3A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 7.3Ohm @ 1.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V
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IXFH16N120P IXFH16N120P IXYS littelfuse-discrete-mosfets-ixf-16n120p-datasheet?assetguid=5ef1dddb-f14c-4160-ab55-31e61c37c34b Description: MOSFET N-CH 1200V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 8A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
на замовлення 583 шт:
термін постачання 21-31 дні (днів)
1+1403.32 грн
30+853.00 грн
120+774.34 грн
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IXFT80N65X2HV IXFT80N65X2HV IXYS littelfuse-discrete-mosfets-ixft80n65x2hv-datasheet?assetguid=98a9675c-3288-46ca-8a25-6362ea5fb6bd Description: MOSFET N-CH 650V 80A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V
на замовлення 1007 шт:
термін постачання 21-31 дні (днів)
1+1128.16 грн
30+672.77 грн
120+585.54 грн
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IXFT80N65X2HV-TRL IXFT80N65X2HV-TRL IXYS littelfuse-discrete-mosfets-ixft80n65x2hv-datasheet?assetguid=98a9675c-3288-46ca-8a25-6362ea5fb6bd Description: MOSFET N-CH 650V 80A TO268HV
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 40A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V
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IXFX210N30X3 IXFX210N30X3 IXYS littelfuse-discrete-mosfets-ixf-210n30x3-datasheet?assetguid=99fbb122-dbc7-44b2-8327-31e7978761a8 Description: MOSFET N-CH 300V 210A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 105A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24200 pF @ 25 V
на замовлення 1427 шт:
термін постачання 21-31 дні (днів)
1+2191.07 грн
30+1385.19 грн
120+1359.87 грн
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IXTN210P10T IXTN210P10T IXYS DS100408AIXTN210P10T.pdf Description: MOSFET P-CH 100V 210A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 105A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 69500 pF @ 25 V
на замовлення 642 шт:
термін постачання 21-31 дні (днів)
1+3264.20 грн
10+2373.83 грн
100+2231.01 грн
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IXTQ36N30P IXTQ36N30P IXYS littelfuse-discrete-mosfets-ixt-36n30p-datasheet?assetguid=bf954b1e-fc82-433f-b03c-f41721f34fc0 Description: MOSFET N-CH 300V 36A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
на замовлення 304 шт:
термін постачання 21-31 дні (днів)
1+419.82 грн
30+230.22 грн
120+191.91 грн
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IXFN360N10T IXFN360N10T IXYS Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXFN360N10T-Datasheet.PDF?assetguid=266AF6DA-14C9-4348-BA01-DC3A8F4611CB Description: MOSFET N-CH 100V 360A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 180A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 505 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 36000 pF @ 25 V
на замовлення 772 шт:
термін постачання 21-31 дні (днів)
1+1904.12 грн
10+1341.05 грн
100+1139.99 грн
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IXFP18N65X2M IXFP18N65X2M IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfp18n65x2m_datasheet.pdf?assetguid=1472e3a2-00ef-43b9-be11-5dfc49693d88 Description: MOSFET N-CH 650V 18A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-220 Isolated Tab
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 25 V
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IXFA18N65X2 IXFA18N65X2 IXYS littelfuse-discrete-mosfets-ixf-18n65x2-datasheet?assetguid=caf1a2be-4d45-4d83-bc47-d506e7353176 Description: MOSFET N-CH 650V 18A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 25 V
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IXFH18N65X2 IXFH18N65X2 IXYS littelfuse-discrete-mosfets-ixf-18n65x2-datasheet?assetguid=caf1a2be-4d45-4d83-bc47-d506e7353176 Description: MOSFET N-CH 650V 18A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 25 V
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IXTH60N20L2 IXTH60N20L2 IXYS littelfuse-discrete-mosfets-ixt-60n20-datasheet?assetguid=963578f0-6c06-4c5b-abb1-606983fd5867 Description: MOSFET N-CH 200V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
1+1346.72 грн
30+815.83 грн
120+734.90 грн
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IXTQ60N20T IXTQ60N20T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_60n20t_datasheet.pdf?assetguid=a2bc6b7d-dab8-4007-9c70-5b1fc95634b1 Description: MOSFET N-CH 200V 60A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 10V
Power Dissipation (Max): 500W (Ta)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4530 pF @ 25 V
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IXTA60N20T-TRL IXTA60N20T-TRL IXYS littelfuse-discrete-mosfets-ixt-60n20t-datasheet?assetguid=a2bc6b7d-dab8-4007-9c70-5b1fc95634b1 Description: MOSFET N-CH 200V 60A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4530 pF @ 25 V
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IXTH110N10L2 IXTH110N10L2 IXYS PdfFile135152.pdf Description: MOSFET N-CH 100V 110A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 500mA, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
на замовлення 1950 шт:
термін постачання 21-31 дні (днів)
1+1346.72 грн
30+815.83 грн
120+734.90 грн
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IXFH110N10P IXFH110N10P IXYS littelfuse-discrete-mosfets-ixfh110n10p-datasheet?assetguid=eea29d76-c01c-4f16-9d4c-b0769d445f2f Description: MOSFET N-CH 100V 110A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 500mA, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 25 V
на замовлення 440 шт:
термін постачання 21-31 дні (днів)
1+631.30 грн
30+356.07 грн
120+300.69 грн
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IXTT110N10L2-TRL IXTT110N10L2-TRL IXYS PdfFile135152.pdf Description: MOSFET N-CH 100V 110A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 55A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268 (IXTT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
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IXTT110N10L2-TRL IXTT110N10L2-TRL IXYS PdfFile135152.pdf Description: MOSFET N-CH 100V 110A TO268
Packaging: Cut Tape (CT)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 55A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268 (IXTT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
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IXFB60N80P IXFB60N80P IXYS 99560.pdf Description: MOSFET N-CH 800V 60A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 30A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS264™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V
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IXFK32N80P IXFK32N80P IXYS 99425.pdf Description: MOSFET N-CH 800V 32A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 16A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
1+1169.04 грн
25+714.39 грн
100+616.75 грн
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IXFA10N80P-TRL IXFA10N80P-TRL IXYS littelfuse-discrete-mosfets-ixf-10n80p-datasheet?assetguid=a565a5d2-4577-4a3a-8c98-1b06bc0768c1 Description: MOSFET N-CH 800V 10A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
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MCNA220PD2200YB MCNA220PD2200YB IXYS littelfuse-power-semiconductors-mcna220pd2200yb-datasheet?assetguid=bed999c7-e39c-47e6-b233-4a7c0647b7f8 Description: SCR MODULE 2.2KV 345A Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7200A, 7780A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 220 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 345 A
Voltage - Off State: 2.2 kV
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MCNA40PD2200TB MCNA40PD2200TB IXYS media?resourcetype=datasheets&itemid=AA91350D-9182-4A62-AB0E-51F3B9201283&filename=Littelfuse-Power-Semiconductors-MCNA40PD2200TB-Datasheet Description: SCR MODULE 2.2KV 63A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 70 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 500A, 540A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 40 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 63 A
Voltage - Off State: 2.2 kV
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MCNA55PD2200TB MCNA55PD2200TB IXYS media?resourcetype=datasheets&itemid=170F279D-DA7D-4C1E-BA38-C51A726043BB&filename=Littelfuse-Power-Semiconductors-MCNA55PD2200TB-Datasheet Description: SCR MODULE 2.2KV 86A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1000A, 1080A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 55 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 86 A
Voltage - Off State: 2.2 kV
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MCNA75PD2200TB MCNA75PD2200TB IXYS media?resourcetype=datasheets&itemid=8959BE89-6337-4D3B-9F1A-3F2023F2125E&filename=Littelfuse-Power-Semiconductors-MCNA75PD2200TB-Datasheet Description: SCR MODULE 2.2KV 118A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1400A, 1510A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 75 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 118 A
Voltage - Off State: 2.2 kV
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MCNA95PD2200TB MCNA95PD2200TB IXYS media?resourcetype=datasheets&itemid=FBECFD23-7EC3-4098-8B34-555EACFFB215&filename=Littelfuse-Power-Semiconductors-MCNA95PD2200TB-Datasheet Description: SCR MODULE 2.2KV 149A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1700A, 1840A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 95 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 149 A
Voltage - Off State: 2.2 kV
на замовлення 72 шт:
термін постачання 21-31 дні (днів)
36+2433.26 грн
Мінімальне замовлення: 36
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MCNA650PD2200CB MCNA650PD2200CB IXYS media?resourcetype=datasheets&itemid=CBDA49D5-9FD9-49E5-A455-70AC7F88D31C&filename=Littelfuse-Power-Semiconductors-MCNA650PD2200CB-Datasheet Description: SCR MODULE 2.2KV 1200A COMPACK
Packaging: Box
Package / Case: ComPack
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16000A, 17300A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 650 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 1200 A
Voltage - Off State: 2.2 kV
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IXKH70N60C5 IXKH70N60C5 IXYS IXKH70N60C5.pdf Description: MOSFET N-CH 600V 70A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
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IXTA80N10T-TRL IXTA80N10T-TRL IXYS littelfuse-discrete-mosfets-ixtp80n10t-datasheet?assetguid=97c849e2-6910-43ce-9bda-8b33b853f553 Description: MOSFET N-CH 100V 80A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 25 V
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IXTA180N10T7-TRL IXTA180N10T7-TRL IXYS littelfuse-discrete-mosfets-ixta180n10t7-datasheet?assetguid=63142f38-9ba5-4484-ab78-644b1c6ee8aa Description: MOSFET N-CH 100V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
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IXFA180N10T2-TRL IXFA180N10T2-TRL IXYS littelfuse-discrete-mosfets-ixf-180n10t2-datasheet?assetguid=fe756911-5a6e-4383-b388-3883df0a0b48 Description: MOSFET N-CH 100V 180A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
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IXTP4N70X2M IXTP4N70X2M IXYS ixty2n65x2.pdf Description: MOSFET N-CH 700V 4A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 25 V
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IXTP28P065T littelfuse-discrete-mosfets-ixt-28p065t-datasheet?assetguid=cc1f3fbc-381e-4c61-a84b-94c3193be3b7
IXTP28P065T
Виробник: IXYS
Description: MOSFET P-CH 65V 28A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 14A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
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IXTY14N60X2 ixty2n65x2.pdf
IXTY14N60X2
Виробник: IXYS
Description: MOSFET N-CH 600V 14A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V
на замовлення 1923 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+398.59 грн
70+193.82 грн
140+177.73 грн
560+143.43 грн
1050+140.18 грн
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IXFA14N60P-TRL littelfuse-discrete-mosfets-ixf-14n60p-datasheet?assetguid=9b66dd8c-b998-4e01-b450-afadebd1db30
IXFA14N60P-TRL
Виробник: IXYS
Description: MOSFET N-CH 600V 14A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 7A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
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IXFX520N075T2 Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXF-520N075T2-Datasheet.PDF?assetguid=90615EDF-C082-4159-945F-6CE8C6ED0F56
IXFX520N075T2
Виробник: IXYS
Description: MOSFET N-CH 75V 520A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 520A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 41000 pF @ 25 V
на замовлення 354 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1122.66 грн
30+669.59 грн
120+582.78 грн
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IXTK60N50L2 DS100087AIXTKTX60N50L2.pdf
IXTK60N50L2
Виробник: IXYS
Description: MOSFET N-CH 500V 60A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 610 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V
на замовлення 523 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2415.13 грн
25+1566.99 грн
100+1535.53 грн
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IXFN64N50P description Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFN64N50P-Datasheet.PDF?assetguid=C3F76E7E-02FB-4FB9-BB27-8D8D85DFFDE8
IXFN64N50P
Виробник: IXYS
Description: MOSFET N-CH 500V 61A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 32A, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V
на замовлення 1040 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1995.32 грн
10+1409.42 грн
100+1209.30 грн
В кошику  од. на суму  грн.
IXTQ88N30P media?resourcetype=datasheets&itemid=9217C088-31F7-40FF-AEF6-3D755C2C3250&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXT-88N30P-Datasheet.PDF
IXTQ88N30P
Виробник: IXYS
Description: MOSFET N-CH 300V 88A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 44A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
на замовлення 720 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+900.17 грн
30+526.36 грн
120+451.71 грн
510+410.44 грн
В кошику  од. на суму  грн.
IXFH270N06T3 media?resourcetype=datasheets&itemid=389149E3-6BDB-45C1-88B8-C8699DB13435&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXF-270N06T3-Datasheet.PDF
IXFH270N06T3
Виробник: IXYS
Description: MOSFET N-CH 60V 270A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
на замовлення 303 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
30+263.79 грн
60+237.87 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
IXCP10M45S Littelfuse-Power-Semi-IXCP10M45S-IXCY10M45s?assetguid=731077FA-A99E-41C1-BC82-960F7ED0C52C
IXCP10M45S
Виробник: IXYS
Description: IC CURRENT REGULATOR TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Function: Current Regulator
Voltage - Input: 450V
Current - Output: 100mA
Operating Temperature: -55°C ~ 150°C
Supplier Device Package: TO-220-3
товару немає в наявності
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IXTA6N50D2-TRL littelfuse-discrete-mosfets-ixt-6n50-datasheet?assetguid=55bbd511-42cb-4098-a3a2-75365a398f37
IXTA6N50D2-TRL
Виробник: IXYS
Description: MOSFET N-CH 500V 6A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3A, 0V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
товару немає в наявності
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IXTA6N50D2-TRL littelfuse-discrete-mosfets-ixt-6n50-datasheet?assetguid=55bbd511-42cb-4098-a3a2-75365a398f37
IXTA6N50D2-TRL
Виробник: IXYS
Description: MOSFET N-CH 500V 6A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3A, 0V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
на замовлення 280 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+705.99 грн
10+469.23 грн
100+388.27 грн
В кошику  од. на суму  грн.
IXTP08N100D2 littelfuse-discrete-mosfets-ixt-08n100-datasheet?assetguid=5f3f8653-b9a5-4c21-928a-8f26a664dbdc
IXTP08N100D2
Виробник: IXYS
Description: MOSFET N-CH 1000V 800MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-220-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
на замовлення 882 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+262.58 грн
50+127.78 грн
100+115.65 грн
500+88.60 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTA3N50D2 littelfuse-discrete-mosfets-ixt-3n50-datasheet?assetguid=7d9bbc87-6f24-48dc-8dcf-2bc5554e3a93
IXTA3N50D2
Виробник: IXYS
Description: MOSFET N-CH 500V 3A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 0V
Power Dissipation (Max): 125W (Tc)
Supplier Device Package: TO-263AA
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 25 V
на замовлення 1346 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+397.81 грн
50+202.42 грн
100+184.95 грн
500+144.85 грн
1000+139.96 грн
В кошику  од. на суму  грн.
IXTP6N100D2 littelfuse-discrete-mosfets-ixt-6n100-datasheet?assetguid=c49ba42b-7a18-44bb-be04-da2e6496f67b
IXTP6N100D2
Виробник: IXYS
Description: MOSFET N-CH 1000V 6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 0V
Power Dissipation (Max): 300W (Tc)
Supplier Device Package: TO-220-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
на замовлення 322 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+745.30 грн
50+399.33 грн
100+368.70 грн
В кошику  од. на суму  грн.
IXTH6N100D2 littelfuse-discrete-mosfets-ixt-6n100-datasheet?assetguid=c49ba42b-7a18-44bb-be04-da2e6496f67b
IXTH6N100D2
Виробник: IXYS
Description: MOSFET N-CH 1000V 6A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 0V
Power Dissipation (Max): 300W (Tc)
Supplier Device Package: TO-247 (IXTH)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
на замовлення 21 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+844.35 грн
В кошику  од. на суму  грн.
IXBK64N250 littelfuse-discrete-igbts-ixb-64n250-datasheet?assetguid=6f198893-d712-49ff-908d-12cba0a8ef2b
IXBK64N250
Виробник: IXYS
Description: IGBT 2500V 75A TO-264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 64A
Supplier Device Package: TO-264AA
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Power - Max: 735 W
на замовлення 49 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+6151.04 грн
В кошику  од. на суму  грн.
IXTY90N055T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_90n055t2_datasheet.pdf?assetguid=9b1b04f2-0e89-452f-ada4-b4c85bbb26c6
IXTY90N055T2
Виробник: IXYS
Description: MOSFET N-CH 55V 90A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 25 V
на замовлення 1569 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+211.48 грн
70+96.59 грн
140+87.49 грн
560+68.88 грн
1050+64.23 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFH90N65X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh90n65x3-datasheet?assetguid=d4c565e9-7fdb-4ff8-bc54-16d1603a6ce2
IXFH90N65X3
Виробник: IXYS
Description: MOSFET 90A 650V X3 TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 45A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 4mA
Supplier Device Package: TO-247 (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6080 pF @ 25 V
на замовлення 289 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1228.01 грн
30+737.80 грн
120+652.94 грн
В кошику  од. на суму  грн.
IXTA80N075L2 littelfuse-discrete-mosfets-ixt-80n075-datasheet?assetguid=09b664e9-c301-4232-b44a-1bb876c4d880
IXTA80N075L2
Виробник: IXYS
Description: MOSFET N-CH 75V 80A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 40A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
на замовлення 975 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1003.95 грн
50+559.16 грн
100+520.02 грн
500+473.24 грн
В кошику  од. на суму  грн.
IXTA44P15T littelfuse-discrete-mosfets-ixt-44p15t-datasheet?assetguid=7f3ca350-d79f-4e06-bce3-4b5b84d96ba2
IXTA44P15T
Виробник: IXYS
Description: MOSFET P-CH 150V 44A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V
на замовлення 4700 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+513.37 грн
50+267.29 грн
100+245.42 грн
500+196.26 грн
В кошику  од. на суму  грн.
IXFB44N100P littelfuse-discrete-mosfets-ixfb44n100p-datasheet?assetguid=84609b16-c63a-4abc-9908-c4837d35df84
IXFB44N100P
Виробник: IXYS
Description: MOSFET N-CH 1000V 44A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 22A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS264™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
на замовлення 412 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2111.67 грн
25+1355.65 грн
100+1299.94 грн
В кошику  од. на суму  грн.
IXFK120N60X3
Виробник: IXYS
Description: DISCRETE MOSFET 120A 600V X3 TO2
Packaging: Tube
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IXFN120N60X3
Виробник: IXYS
Description: DISCRETE MOSFET 120A 600V X3 SOT
Packaging: Tube
товару немає в наявності
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IXFX120N60X3
Виробник: IXYS
Description: DISCRETE MOSFET 120A 600V X3 PLU
Packaging: Tube
товару немає в наявності
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IXTH1N450HV DS100500DIXTTTH1N450HV.pdf
IXTH1N450HV
Виробник: IXYS
Description: MOSFET N-CH 4500V 1A TO247HV
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 80Ohm @ 50mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 6V @ 250µA
Supplier Device Package: TO-247HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4500 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
на замовлення 358 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2924.58 грн
30+1947.81 грн
В кошику  од. на суму  грн.
IXTF1N450 DS100501DIXTF1N450.pdf
IXTF1N450
Виробник: IXYS
Description: MOSFET N-CH 4500V 900MA I4PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
Rds On (Max) @ Id, Vgs: 85Ohm @ 50mA, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 250µA
Supplier Device Package: ISOPLUS i4-PAC™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
на замовлення 295 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+6346.02 грн
25+5003.31 грн
В кошику  од. на суму  грн.
IXTT1N450HV DS100500DIXTTTH1N450HV.pdf
IXTT1N450HV
Виробник: IXYS
Description: MOSFET N-CH 4500V 1A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 85Ohm @ 50mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
товару немає в наявності
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IXTN30N100L DS99813BIXTN30N100L.pdf
IXTN30N100L
Виробник: IXYS
Description: MOSFET N-CH 1000V 30A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 15A, 20V
Power Dissipation (Max): 800W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V
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IXTA3N150HV littelfuse-discrete-mosfets-ixta3n150hv-datasheet?assetguid=db451462-b6d5-4e71-b2c9-e7feeb9a26ab
IXTA3N150HV
Виробник: IXYS
Description: MOSFET N-CH 1500V 3A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 7.3Ohm @ 1.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V
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IXFH16N120P littelfuse-discrete-mosfets-ixf-16n120p-datasheet?assetguid=5ef1dddb-f14c-4160-ab55-31e61c37c34b
IXFH16N120P
Виробник: IXYS
Description: MOSFET N-CH 1200V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 8A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
на замовлення 583 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1403.32 грн
30+853.00 грн
120+774.34 грн
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IXFT80N65X2HV littelfuse-discrete-mosfets-ixft80n65x2hv-datasheet?assetguid=98a9675c-3288-46ca-8a25-6362ea5fb6bd
IXFT80N65X2HV
Виробник: IXYS
Description: MOSFET N-CH 650V 80A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V
на замовлення 1007 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1128.16 грн
30+672.77 грн
120+585.54 грн
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IXFT80N65X2HV-TRL littelfuse-discrete-mosfets-ixft80n65x2hv-datasheet?assetguid=98a9675c-3288-46ca-8a25-6362ea5fb6bd
IXFT80N65X2HV-TRL
Виробник: IXYS
Description: MOSFET N-CH 650V 80A TO268HV
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 40A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V
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IXFX210N30X3 littelfuse-discrete-mosfets-ixf-210n30x3-datasheet?assetguid=99fbb122-dbc7-44b2-8327-31e7978761a8
IXFX210N30X3
Виробник: IXYS
Description: MOSFET N-CH 300V 210A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 105A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24200 pF @ 25 V
на замовлення 1427 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2191.07 грн
30+1385.19 грн
120+1359.87 грн
В кошику  од. на суму  грн.
IXTN210P10T DS100408AIXTN210P10T.pdf
IXTN210P10T
Виробник: IXYS
Description: MOSFET P-CH 100V 210A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 105A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 69500 pF @ 25 V
на замовлення 642 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3264.20 грн
10+2373.83 грн
100+2231.01 грн
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IXTQ36N30P littelfuse-discrete-mosfets-ixt-36n30p-datasheet?assetguid=bf954b1e-fc82-433f-b03c-f41721f34fc0
IXTQ36N30P
Виробник: IXYS
Description: MOSFET N-CH 300V 36A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
на замовлення 304 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+419.82 грн
30+230.22 грн
120+191.91 грн
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IXFN360N10T Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXFN360N10T-Datasheet.PDF?assetguid=266AF6DA-14C9-4348-BA01-DC3A8F4611CB
IXFN360N10T
Виробник: IXYS
Description: MOSFET N-CH 100V 360A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 180A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 505 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 36000 pF @ 25 V
на замовлення 772 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1904.12 грн
10+1341.05 грн
100+1139.99 грн
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IXFP18N65X2M littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfp18n65x2m_datasheet.pdf?assetguid=1472e3a2-00ef-43b9-be11-5dfc49693d88
IXFP18N65X2M
Виробник: IXYS
Description: MOSFET N-CH 650V 18A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-220 Isolated Tab
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 25 V
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IXFA18N65X2 littelfuse-discrete-mosfets-ixf-18n65x2-datasheet?assetguid=caf1a2be-4d45-4d83-bc47-d506e7353176
IXFA18N65X2
Виробник: IXYS
Description: MOSFET N-CH 650V 18A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 25 V
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IXFH18N65X2 littelfuse-discrete-mosfets-ixf-18n65x2-datasheet?assetguid=caf1a2be-4d45-4d83-bc47-d506e7353176
IXFH18N65X2
Виробник: IXYS
Description: MOSFET N-CH 650V 18A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 25 V
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IXTH60N20L2 littelfuse-discrete-mosfets-ixt-60n20-datasheet?assetguid=963578f0-6c06-4c5b-abb1-606983fd5867
IXTH60N20L2
Виробник: IXYS
Description: MOSFET N-CH 200V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1346.72 грн
30+815.83 грн
120+734.90 грн
В кошику  од. на суму  грн.
IXTQ60N20T littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_60n20t_datasheet.pdf?assetguid=a2bc6b7d-dab8-4007-9c70-5b1fc95634b1
IXTQ60N20T
Виробник: IXYS
Description: MOSFET N-CH 200V 60A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 10V
Power Dissipation (Max): 500W (Ta)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4530 pF @ 25 V
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IXTA60N20T-TRL littelfuse-discrete-mosfets-ixt-60n20t-datasheet?assetguid=a2bc6b7d-dab8-4007-9c70-5b1fc95634b1
IXTA60N20T-TRL
Виробник: IXYS
Description: MOSFET N-CH 200V 60A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4530 pF @ 25 V
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IXTH110N10L2 PdfFile135152.pdf
IXTH110N10L2
Виробник: IXYS
Description: MOSFET N-CH 100V 110A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 500mA, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
на замовлення 1950 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1346.72 грн
30+815.83 грн
120+734.90 грн
В кошику  од. на суму  грн.
IXFH110N10P littelfuse-discrete-mosfets-ixfh110n10p-datasheet?assetguid=eea29d76-c01c-4f16-9d4c-b0769d445f2f
IXFH110N10P
Виробник: IXYS
Description: MOSFET N-CH 100V 110A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 500mA, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 25 V
на замовлення 440 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+631.30 грн
30+356.07 грн
120+300.69 грн
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IXTT110N10L2-TRL PdfFile135152.pdf
IXTT110N10L2-TRL
Виробник: IXYS
Description: MOSFET N-CH 100V 110A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 55A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268 (IXTT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
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IXTT110N10L2-TRL PdfFile135152.pdf
IXTT110N10L2-TRL
Виробник: IXYS
Description: MOSFET N-CH 100V 110A TO268
Packaging: Cut Tape (CT)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 55A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268 (IXTT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
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IXFB60N80P 99560.pdf
IXFB60N80P
Виробник: IXYS
Description: MOSFET N-CH 800V 60A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 30A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS264™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V
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IXFK32N80P 99425.pdf
IXFK32N80P
Виробник: IXYS
Description: MOSFET N-CH 800V 32A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 16A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1169.04 грн
25+714.39 грн
100+616.75 грн
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IXFA10N80P-TRL littelfuse-discrete-mosfets-ixf-10n80p-datasheet?assetguid=a565a5d2-4577-4a3a-8c98-1b06bc0768c1
IXFA10N80P-TRL
Виробник: IXYS
Description: MOSFET N-CH 800V 10A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
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MCNA220PD2200YB littelfuse-power-semiconductors-mcna220pd2200yb-datasheet?assetguid=bed999c7-e39c-47e6-b233-4a7c0647b7f8
MCNA220PD2200YB
Виробник: IXYS
Description: SCR MODULE 2.2KV 345A Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7200A, 7780A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 220 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 345 A
Voltage - Off State: 2.2 kV
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MCNA40PD2200TB media?resourcetype=datasheets&itemid=AA91350D-9182-4A62-AB0E-51F3B9201283&filename=Littelfuse-Power-Semiconductors-MCNA40PD2200TB-Datasheet
MCNA40PD2200TB
Виробник: IXYS
Description: SCR MODULE 2.2KV 63A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 70 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 500A, 540A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 40 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 63 A
Voltage - Off State: 2.2 kV
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MCNA55PD2200TB media?resourcetype=datasheets&itemid=170F279D-DA7D-4C1E-BA38-C51A726043BB&filename=Littelfuse-Power-Semiconductors-MCNA55PD2200TB-Datasheet
MCNA55PD2200TB
Виробник: IXYS
Description: SCR MODULE 2.2KV 86A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1000A, 1080A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 55 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 86 A
Voltage - Off State: 2.2 kV
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MCNA75PD2200TB media?resourcetype=datasheets&itemid=8959BE89-6337-4D3B-9F1A-3F2023F2125E&filename=Littelfuse-Power-Semiconductors-MCNA75PD2200TB-Datasheet
MCNA75PD2200TB
Виробник: IXYS
Description: SCR MODULE 2.2KV 118A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1400A, 1510A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 75 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 118 A
Voltage - Off State: 2.2 kV
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MCNA95PD2200TB media?resourcetype=datasheets&itemid=FBECFD23-7EC3-4098-8B34-555EACFFB215&filename=Littelfuse-Power-Semiconductors-MCNA95PD2200TB-Datasheet
MCNA95PD2200TB
Виробник: IXYS
Description: SCR MODULE 2.2KV 149A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1700A, 1840A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 95 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 149 A
Voltage - Off State: 2.2 kV
на замовлення 72 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
36+2433.26 грн
Мінімальне замовлення: 36
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MCNA650PD2200CB media?resourcetype=datasheets&itemid=CBDA49D5-9FD9-49E5-A455-70AC7F88D31C&filename=Littelfuse-Power-Semiconductors-MCNA650PD2200CB-Datasheet
MCNA650PD2200CB
Виробник: IXYS
Description: SCR MODULE 2.2KV 1200A COMPACK
Packaging: Box
Package / Case: ComPack
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16000A, 17300A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 650 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 1200 A
Voltage - Off State: 2.2 kV
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IXKH70N60C5 IXKH70N60C5.pdf
IXKH70N60C5
Виробник: IXYS
Description: MOSFET N-CH 600V 70A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
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IXTA80N10T-TRL littelfuse-discrete-mosfets-ixtp80n10t-datasheet?assetguid=97c849e2-6910-43ce-9bda-8b33b853f553
IXTA80N10T-TRL
Виробник: IXYS
Description: MOSFET N-CH 100V 80A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 25 V
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IXTA180N10T7-TRL littelfuse-discrete-mosfets-ixta180n10t7-datasheet?assetguid=63142f38-9ba5-4484-ab78-644b1c6ee8aa
IXTA180N10T7-TRL
Виробник: IXYS
Description: MOSFET N-CH 100V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
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IXFA180N10T2-TRL littelfuse-discrete-mosfets-ixf-180n10t2-datasheet?assetguid=fe756911-5a6e-4383-b388-3883df0a0b48
IXFA180N10T2-TRL
Виробник: IXYS
Description: MOSFET N-CH 100V 180A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
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IXTP4N70X2M ixty2n65x2.pdf
IXTP4N70X2M
Виробник: IXYS
Description: MOSFET N-CH 700V 4A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 25 V
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