Продукція > IXYS > Всі товари виробника IXYS (14563) > Сторінка 106 з 243

Обрати Сторінку:   [  << Попередня Сторінка ]  1 24 48 72 96 101 102 103 104 105 106 107 108 109 110 111 120 144 168 192 216 240 243  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
IXFH90N65X3 IXFH90N65X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh90n65x3-datasheet?assetguid=d4c565e9-7fdb-4ff8-bc54-16d1603a6ce2 Description: MOSFET 90A 650V X3 TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 45A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 4mA
Supplier Device Package: TO-247 (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6080 pF @ 25 V
на замовлення 289 шт:
термін постачання 21-31 дні (днів)
1+1219.63 грн
30+732.77 грн
120+648.49 грн
В кошику  од. на суму  грн.
IXTA80N075L2 IXTA80N075L2 IXYS littelfuse-discrete-mosfets-ixt-80n075-datasheet?assetguid=09b664e9-c301-4232-b44a-1bb876c4d880 Description: MOSFET N-CH 75V 80A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 40A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
на замовлення 975 шт:
термін постачання 21-31 дні (днів)
1+997.10 грн
50+555.35 грн
100+516.47 грн
500+470.02 грн
В кошику  од. на суму  грн.
IXTA44P15T IXTA44P15T IXYS littelfuse-discrete-mosfets-ixt-44p15t-datasheet?assetguid=7f3ca350-d79f-4e06-bce3-4b5b84d96ba2 Description: MOSFET P-CH 150V 44A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V
на замовлення 4700 шт:
термін постачання 21-31 дні (днів)
1+509.87 грн
50+265.46 грн
100+243.74 грн
500+194.92 грн
В кошику  од. на суму  грн.
IXFB44N100P IXFB44N100P IXYS littelfuse-discrete-mosfets-ixfb44n100p-datasheet?assetguid=84609b16-c63a-4abc-9908-c4837d35df84 Description: MOSFET N-CH 1000V 44A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 22A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS264™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
на замовлення 412 шт:
термін постачання 21-31 дні (днів)
1+2097.27 грн
25+1346.41 грн
100+1291.07 грн
В кошику  од. на суму  грн.
IXFK120N60X3 IXYS Description: DISCRETE MOSFET 120A 600V X3 TO2
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
IXFN120N60X3 IXYS Description: DISCRETE MOSFET 120A 600V X3 SOT
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
IXFX120N60X3 IXYS Description: DISCRETE MOSFET 120A 600V X3 PLU
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
IXTH1N450HV IXTH1N450HV IXYS DS100500DIXTTTH1N450HV.pdf Description: MOSFET N-CH 4500V 1A TO247HV
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 80Ohm @ 50mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 6V @ 250µA
Supplier Device Package: TO-247HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4500 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
на замовлення 358 шт:
термін постачання 21-31 дні (днів)
1+2904.64 грн
30+1934.53 грн
В кошику  од. на суму  грн.
IXTF1N450 IXTF1N450 IXYS DS100501DIXTF1N450.pdf Description: MOSFET N-CH 4500V 900MA I4PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
Rds On (Max) @ Id, Vgs: 85Ohm @ 50mA, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 250µA
Supplier Device Package: ISOPLUS i4-PAC™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
на замовлення 295 шт:
термін постачання 21-31 дні (днів)
1+6302.75 грн
25+4969.20 грн
В кошику  од. на суму  грн.
IXTT1N450HV IXTT1N450HV IXYS DS100500DIXTTTH1N450HV.pdf Description: MOSFET N-CH 4500V 1A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 85Ohm @ 50mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXTN30N100L IXTN30N100L IXYS DS99813BIXTN30N100L.pdf Description: MOSFET N-CH 1000V 30A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 15A, 20V
Power Dissipation (Max): 800W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXTA3N150HV IXTA3N150HV IXYS littelfuse-discrete-mosfets-ixta3n150hv-datasheet?assetguid=db451462-b6d5-4e71-b2c9-e7feeb9a26ab Description: MOSFET N-CH 1500V 3A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 7.3Ohm @ 1.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXFH16N120P IXFH16N120P IXYS littelfuse-discrete-mosfets-ixf-16n120p-datasheet?assetguid=5ef1dddb-f14c-4160-ab55-31e61c37c34b Description: MOSFET N-CH 1200V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 8A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
на замовлення 583 шт:
термін постачання 21-31 дні (днів)
1+1393.76 грн
30+847.19 грн
120+769.06 грн
В кошику  од. на суму  грн.
IXFT80N65X2HV IXFT80N65X2HV IXYS littelfuse-discrete-mosfets-ixft80n65x2hv-datasheet?assetguid=98a9675c-3288-46ca-8a25-6362ea5fb6bd Description: MOSFET N-CH 650V 80A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V
на замовлення 1007 шт:
термін постачання 21-31 дні (днів)
1+1120.47 грн
30+668.19 грн
120+581.55 грн
В кошику  од. на суму  грн.
IXFT80N65X2HV-TRL IXFT80N65X2HV-TRL IXYS littelfuse-discrete-mosfets-ixft80n65x2hv-datasheet?assetguid=98a9675c-3288-46ca-8a25-6362ea5fb6bd Description: MOSFET N-CH 650V 80A TO268HV
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 40A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXFX210N30X3 IXFX210N30X3 IXYS littelfuse-discrete-mosfets-ixf-210n30x3-datasheet?assetguid=99fbb122-dbc7-44b2-8327-31e7978761a8 Description: MOSFET N-CH 300V 210A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 105A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24200 pF @ 25 V
на замовлення 1427 шт:
термін постачання 21-31 дні (днів)
1+2176.13 грн
30+1375.75 грн
120+1350.60 грн
В кошику  од. на суму  грн.
IXTN210P10T IXTN210P10T IXYS DS100408AIXTN210P10T.pdf Description: MOSFET P-CH 100V 210A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 105A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 69500 pF @ 25 V
на замовлення 642 шт:
термін постачання 21-31 дні (днів)
1+3241.95 грн
10+2357.65 грн
100+2215.80 грн
В кошику  од. на суму  грн.
IXTQ36N30P IXTQ36N30P IXYS littelfuse-discrete-mosfets-ixt-36n30p-datasheet?assetguid=bf954b1e-fc82-433f-b03c-f41721f34fc0 Description: MOSFET N-CH 300V 36A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
на замовлення 304 шт:
термін постачання 21-31 дні (днів)
1+416.96 грн
30+228.65 грн
120+190.61 грн
В кошику  од. на суму  грн.
IXFN360N10T IXFN360N10T IXYS Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXFN360N10T-Datasheet.PDF?assetguid=266AF6DA-14C9-4348-BA01-DC3A8F4611CB Description: MOSFET N-CH 100V 360A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 180A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 505 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 36000 pF @ 25 V
на замовлення 772 шт:
термін постачання 21-31 дні (днів)
1+1891.14 грн
10+1331.91 грн
100+1132.21 грн
В кошику  од. на суму  грн.
IXFP18N65X2M IXFP18N65X2M IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfp18n65x2m_datasheet.pdf?assetguid=1472e3a2-00ef-43b9-be11-5dfc49693d88 Description: MOSFET N-CH 650V 18A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-220 Isolated Tab
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXFA18N65X2 IXFA18N65X2 IXYS littelfuse-discrete-mosfets-ixf-18n65x2-datasheet?assetguid=caf1a2be-4d45-4d83-bc47-d506e7353176 Description: MOSFET N-CH 650V 18A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXFH18N65X2 IXFH18N65X2 IXYS littelfuse-discrete-mosfets-ixf-18n65x2-datasheet?assetguid=caf1a2be-4d45-4d83-bc47-d506e7353176 Description: MOSFET N-CH 650V 18A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXTH60N20L2 IXTH60N20L2 IXYS littelfuse-discrete-mosfets-ixt-60n20-datasheet?assetguid=963578f0-6c06-4c5b-abb1-606983fd5867 Description: MOSFET N-CH 200V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
1+1337.54 грн
30+810.27 грн
120+729.89 грн
В кошику  од. на суму  грн.
IXTQ60N20T IXTQ60N20T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_60n20t_datasheet.pdf?assetguid=a2bc6b7d-dab8-4007-9c70-5b1fc95634b1 Description: MOSFET N-CH 200V 60A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 10V
Power Dissipation (Max): 500W (Ta)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4530 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXTA60N20T-TRL IXTA60N20T-TRL IXYS littelfuse-discrete-mosfets-ixt-60n20t-datasheet?assetguid=a2bc6b7d-dab8-4007-9c70-5b1fc95634b1 Description: MOSFET N-CH 200V 60A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4530 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXTH110N10L2 IXTH110N10L2 IXYS PdfFile135152.pdf Description: MOSFET N-CH 100V 110A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 500mA, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
на замовлення 1950 шт:
термін постачання 21-31 дні (днів)
1+1337.54 грн
30+810.27 грн
120+729.89 грн
В кошику  од. на суму  грн.
IXFH110N10P IXFH110N10P IXYS littelfuse-discrete-mosfets-ixfh110n10p-datasheet?assetguid=eea29d76-c01c-4f16-9d4c-b0769d445f2f Description: MOSFET N-CH 100V 110A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 500mA, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXTT110N10L2-TRL IXTT110N10L2-TRL IXYS PdfFile135152.pdf Description: MOSFET N-CH 100V 110A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 55A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268 (IXTT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXTT110N10L2-TRL IXTT110N10L2-TRL IXYS PdfFile135152.pdf Description: MOSFET N-CH 100V 110A TO268
Packaging: Cut Tape (CT)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 55A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268 (IXTT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXFB60N80P IXFB60N80P IXYS 99560.pdf Description: MOSFET N-CH 800V 60A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 30A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS264™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXFK32N80P IXFK32N80P IXYS 99425.pdf Description: MOSFET N-CH 800V 32A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 16A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
1+1161.07 грн
25+709.52 грн
100+612.54 грн
В кошику  од. на суму  грн.
IXFA10N80P-TRL IXFA10N80P-TRL IXYS littelfuse-discrete-mosfets-ixf-10n80p-datasheet?assetguid=a565a5d2-4577-4a3a-8c98-1b06bc0768c1 Description: MOSFET N-CH 800V 10A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
MCNA220PD2200YB MCNA220PD2200YB IXYS littelfuse-power-semiconductors-mcna220pd2200yb-datasheet?assetguid=bed999c7-e39c-47e6-b233-4a7c0647b7f8 Description: SCR MODULE 2.2KV 345A Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7200A, 7780A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 220 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 345 A
Voltage - Off State: 2.2 kV
товару немає в наявності
В кошику  од. на суму  грн.
MCNA40PD2200TB MCNA40PD2200TB IXYS media?resourcetype=datasheets&itemid=AA91350D-9182-4A62-AB0E-51F3B9201283&filename=Littelfuse-Power-Semiconductors-MCNA40PD2200TB-Datasheet Description: SCR MODULE 2.2KV 63A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 70 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 500A, 540A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 40 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 63 A
Voltage - Off State: 2.2 kV
товару немає в наявності
В кошику  од. на суму  грн.
MCNA55PD2200TB MCNA55PD2200TB IXYS media?resourcetype=datasheets&itemid=170F279D-DA7D-4C1E-BA38-C51A726043BB&filename=Littelfuse-Power-Semiconductors-MCNA55PD2200TB-Datasheet Description: SCR MODULE 2.2KV 86A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1000A, 1080A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 55 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 86 A
Voltage - Off State: 2.2 kV
товару немає в наявності
В кошику  од. на суму  грн.
MCNA75PD2200TB MCNA75PD2200TB IXYS media?resourcetype=datasheets&itemid=8959BE89-6337-4D3B-9F1A-3F2023F2125E&filename=Littelfuse-Power-Semiconductors-MCNA75PD2200TB-Datasheet Description: SCR MODULE 2.2KV 118A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1400A, 1510A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 75 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 118 A
Voltage - Off State: 2.2 kV
товару немає в наявності
В кошику  од. на суму  грн.
MCNA95PD2200TB MCNA95PD2200TB IXYS media?resourcetype=datasheets&itemid=FBECFD23-7EC3-4098-8B34-555EACFFB215&filename=Littelfuse-Power-Semiconductors-MCNA95PD2200TB-Datasheet Description: SCR MODULE 2.2KV 149A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1700A, 1840A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 95 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 149 A
Voltage - Off State: 2.2 kV
на замовлення 72 шт:
термін постачання 21-31 дні (днів)
36+2416.67 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
MCNA650PD2200CB MCNA650PD2200CB IXYS media?resourcetype=datasheets&itemid=CBDA49D5-9FD9-49E5-A455-70AC7F88D31C&filename=Littelfuse-Power-Semiconductors-MCNA650PD2200CB-Datasheet Description: SCR MODULE 2.2KV 1200A COMPACK
Packaging: Box
Package / Case: ComPack
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16000A, 17300A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 650 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 1200 A
Voltage - Off State: 2.2 kV
товару немає в наявності
В кошику  од. на суму  грн.
IXKH70N60C5 IXKH70N60C5 IXYS IXKH70N60C5.pdf Description: MOSFET N-CH 600V 70A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IXTA80N10T-TRL IXTA80N10T-TRL IXYS littelfuse-discrete-mosfets-ixtp80n10t-datasheet?assetguid=97c849e2-6910-43ce-9bda-8b33b853f553 Description: MOSFET N-CH 100V 80A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXTA180N10T7-TRL IXTA180N10T7-TRL IXYS littelfuse-discrete-mosfets-ixta180n10t7-datasheet?assetguid=63142f38-9ba5-4484-ab78-644b1c6ee8aa Description: MOSFET N-CH 100V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXFA180N10T2-TRL IXFA180N10T2-TRL IXYS littelfuse-discrete-mosfets-ixf-180n10t2-datasheet?assetguid=fe756911-5a6e-4383-b388-3883df0a0b48 Description: MOSFET N-CH 100V 180A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXTP4N70X2M IXTP4N70X2M IXYS ixty2n65x2.pdf Description: MOSFET N-CH 700V 4A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXTU4N70X2 IXTU4N70X2 IXYS ixty2n65x2.pdf Description: MOSFET N-CH 700V 4A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXTA4N70X2 IXTA4N70X2 IXYS ixty2n65x2.pdf Description: MOSFET N-CH 700V 4A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXTA90N20X3 IXTA90N20X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixta90n20x3_datasheet.pdf?assetguid=0d436688-a336-4e6b-a404-a707c9c33210 Description: MOSFET N-CH 200V 90A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 45A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5420 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXFA90N20X3-TRL IXFA90N20X3-TRL IXYS littelfuse-discrete-mosfets-ixfa90n20x3-datasheet?assetguid=931087c8-e197-4323-a05d-f63953bc30e1 Description: MOSFET N-CH 200V 90A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 45A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5420 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXFH12N100F IXFH12N100F IXYS littelfuse-discrete-mosfets-ixfh12n100-datasheet?assetguid=cefb7be4-73a0-469a-adea-87ac18070cb1 Description: MOSFET N-CH 1000V 12A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 6A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
на замовлення 858 шт:
термін постачання 21-31 дні (днів)
1+890.13 грн
30+520.21 грн
120+446.41 грн
510+405.62 грн
В кошику  од. на суму  грн.
IXFT180N20X3HV IXFT180N20X3HV IXYS littelfuse-discrete-mosfets-ixf-180n20x3-datasheet?assetguid=e776435a-0ad7-472c-a5ba-3ce355c07926 Description: MOSFET N-CH 200V 180A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 90A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
на замовлення 271 шт:
термін постачання 21-31 дні (днів)
1+1243.06 грн
30+748.06 грн
120+665.03 грн
В кошику  од. на суму  грн.
IXTT80N20L IXTT80N20L IXYS littelfuse-discrete-mosfets-ixt-80n20l-datasheet?assetguid=336ee21c-0426-4737-a5c8-6c7350c8a845 Description: MOSFET N-CH 200V 80A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 40A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6160 pF @ 25 V
на замовлення 915 шт:
термін постачання 21-31 дні (днів)
1+1435.14 грн
30+875.31 грн
120+799.68 грн
В кошику  од. на суму  грн.
IXTH80N20L IXTH80N20L IXYS DS100294IXTHTT80N20L.pdf Description: MOSFET N-CH 200V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 40A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6160 pF @ 25 V
на замовлення 24 шт:
термін постачання 21-31 дні (днів)
1+1066.59 грн
В кошику  од. на суму  грн.
IXSG40N65L2K IXSG40N65L2K IXYS power-semiconductor-sic-mosfet-ixsg40n65l2k-datasheet?assetguid=15bde63b-8e75-40b2-8290-b484f25a2b34 Description: 650V 60M (40A @ 25C) SIC MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 15A, 18V
Power Dissipation (Max): 174W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1218 pF @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
IXSG40N65L2K IXSG40N65L2K IXYS power-semiconductor-sic-mosfet-ixsg40n65l2k-datasheet?assetguid=15bde63b-8e75-40b2-8290-b484f25a2b34 Description: 650V 60M (40A @ 25C) SIC MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 15A, 18V
Power Dissipation (Max): 174W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1218 pF @ 600 V
на замовлення 1966 шт:
термін постачання 21-31 дні (днів)
1+495.82 грн
10+323.32 грн
100+244.30 грн
В кошику  од. на суму  грн.
IXTX120P20T IXTX120P20T IXYS littelfuse_discrete_mosfets_p-channel_ixt_120p20t_datasheet.pdf?assetguid=67b5be5e-bc83-47b6-b9a2-f0699eb6249e Description: MOSFET P-CH 200V 120A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 60A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PLUS247™-3
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 73000 pF @ 25 V
на замовлення 317 шт:
термін постачання 21-31 дні (днів)
1+2051.20 грн
30+1287.90 грн
120+1248.87 грн
В кошику  од. на суму  грн.
IXFK64N60P3 IXFK64N60P3 IXYS DS100312BIXFKFX64N60P3.pdf Description: MOSFET N-CH 600V 64A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 32A, 10V
Power Dissipation (Max): 1130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 25 V
на замовлення 650 шт:
термін постачання 21-31 дні (днів)
1+1212.61 грн
25+742.75 грн
100+641.78 грн
500+601.71 грн
В кошику  од. на суму  грн.
IXFK220N17T2 IXFK220N17T2 IXYS DS100230IXFKFX220N17T2.pdf Description: MOSFET N-CH 170V 220A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 60A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 170 V
Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 31000 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
1+1049.42 грн
25+635.11 грн
100+545.87 грн
В кошику  од. на суму  грн.
GUO40-12NO1 GUO40-12NO1 IXYS Littelfuse_Power_Semiconductors_GUO40_12NO1_Datasheet.pdf Bridge Rectifiers 40 Amps 1200V
на замовлення 1801 шт:
термін постачання 21-30 дні (днів)
1+1445.38 грн
10+1093.49 грн
В кошику  од. на суму  грн.
FBE22-06N1 FBE22-06N1 IXYS media-3319454.pdf Bridge Rectifiers RECTIFIER BRIDGE ISOPLUS i4-PAC
на замовлення 513 шт:
термін постачання 21-30 дні (днів)
1+1061.56 грн
10+1029.64 грн
25+726.68 грн
В кошику  од. на суму  грн.
VUO190-08NO7 VUO190-08NO7 IXYS media-3323304.pdf Bridge Rectifiers 190 Amps 800V
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
1+5644.66 грн
10+5225.60 грн
25+4415.60 грн
50+4381.59 грн
100+4219.88 грн
В кошику  од. на суму  грн.
VUB72-16NOXT VUB72-16NOXT IXYS media-3319306.pdf Bridge Rectifiers Standard Rectifier Bridge+Brake Unit
на замовлення 38 шт:
термін постачання 21-30 дні (днів)
1+3854.34 грн
10+3419.35 грн
24+2740.14 грн
48+2674.90 грн
120+2375.76 грн
В кошику  од. на суму  грн.
IXFH90N65X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh90n65x3-datasheet?assetguid=d4c565e9-7fdb-4ff8-bc54-16d1603a6ce2
IXFH90N65X3
Виробник: IXYS
Description: MOSFET 90A 650V X3 TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 45A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 4mA
Supplier Device Package: TO-247 (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6080 pF @ 25 V
на замовлення 289 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1219.63 грн
30+732.77 грн
120+648.49 грн
В кошику  од. на суму  грн.
IXTA80N075L2 littelfuse-discrete-mosfets-ixt-80n075-datasheet?assetguid=09b664e9-c301-4232-b44a-1bb876c4d880
IXTA80N075L2
Виробник: IXYS
Description: MOSFET N-CH 75V 80A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 40A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
на замовлення 975 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+997.10 грн
50+555.35 грн
100+516.47 грн
500+470.02 грн
В кошику  од. на суму  грн.
IXTA44P15T littelfuse-discrete-mosfets-ixt-44p15t-datasheet?assetguid=7f3ca350-d79f-4e06-bce3-4b5b84d96ba2
IXTA44P15T
Виробник: IXYS
Description: MOSFET P-CH 150V 44A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V
на замовлення 4700 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+509.87 грн
50+265.46 грн
100+243.74 грн
500+194.92 грн
В кошику  од. на суму  грн.
IXFB44N100P littelfuse-discrete-mosfets-ixfb44n100p-datasheet?assetguid=84609b16-c63a-4abc-9908-c4837d35df84
IXFB44N100P
Виробник: IXYS
Description: MOSFET N-CH 1000V 44A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 22A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS264™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
на замовлення 412 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2097.27 грн
25+1346.41 грн
100+1291.07 грн
В кошику  од. на суму  грн.
IXFK120N60X3
Виробник: IXYS
Description: DISCRETE MOSFET 120A 600V X3 TO2
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
IXFN120N60X3
Виробник: IXYS
Description: DISCRETE MOSFET 120A 600V X3 SOT
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
IXFX120N60X3
Виробник: IXYS
Description: DISCRETE MOSFET 120A 600V X3 PLU
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
IXTH1N450HV DS100500DIXTTTH1N450HV.pdf
IXTH1N450HV
Виробник: IXYS
Description: MOSFET N-CH 4500V 1A TO247HV
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 80Ohm @ 50mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 6V @ 250µA
Supplier Device Package: TO-247HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4500 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
на замовлення 358 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2904.64 грн
30+1934.53 грн
В кошику  од. на суму  грн.
IXTF1N450 DS100501DIXTF1N450.pdf
IXTF1N450
Виробник: IXYS
Description: MOSFET N-CH 4500V 900MA I4PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
Rds On (Max) @ Id, Vgs: 85Ohm @ 50mA, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 250µA
Supplier Device Package: ISOPLUS i4-PAC™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
на замовлення 295 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+6302.75 грн
25+4969.20 грн
В кошику  од. на суму  грн.
IXTT1N450HV DS100500DIXTTTH1N450HV.pdf
IXTT1N450HV
Виробник: IXYS
Description: MOSFET N-CH 4500V 1A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 85Ohm @ 50mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXTN30N100L DS99813BIXTN30N100L.pdf
IXTN30N100L
Виробник: IXYS
Description: MOSFET N-CH 1000V 30A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 15A, 20V
Power Dissipation (Max): 800W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXTA3N150HV littelfuse-discrete-mosfets-ixta3n150hv-datasheet?assetguid=db451462-b6d5-4e71-b2c9-e7feeb9a26ab
IXTA3N150HV
Виробник: IXYS
Description: MOSFET N-CH 1500V 3A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 7.3Ohm @ 1.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXFH16N120P littelfuse-discrete-mosfets-ixf-16n120p-datasheet?assetguid=5ef1dddb-f14c-4160-ab55-31e61c37c34b
IXFH16N120P
Виробник: IXYS
Description: MOSFET N-CH 1200V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 8A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
на замовлення 583 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1393.76 грн
30+847.19 грн
120+769.06 грн
В кошику  од. на суму  грн.
IXFT80N65X2HV littelfuse-discrete-mosfets-ixft80n65x2hv-datasheet?assetguid=98a9675c-3288-46ca-8a25-6362ea5fb6bd
IXFT80N65X2HV
Виробник: IXYS
Description: MOSFET N-CH 650V 80A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V
на замовлення 1007 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1120.47 грн
30+668.19 грн
120+581.55 грн
В кошику  од. на суму  грн.
IXFT80N65X2HV-TRL littelfuse-discrete-mosfets-ixft80n65x2hv-datasheet?assetguid=98a9675c-3288-46ca-8a25-6362ea5fb6bd
IXFT80N65X2HV-TRL
Виробник: IXYS
Description: MOSFET N-CH 650V 80A TO268HV
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 40A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXFX210N30X3 littelfuse-discrete-mosfets-ixf-210n30x3-datasheet?assetguid=99fbb122-dbc7-44b2-8327-31e7978761a8
IXFX210N30X3
Виробник: IXYS
Description: MOSFET N-CH 300V 210A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 105A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24200 pF @ 25 V
на замовлення 1427 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2176.13 грн
30+1375.75 грн
120+1350.60 грн
В кошику  од. на суму  грн.
IXTN210P10T DS100408AIXTN210P10T.pdf
IXTN210P10T
Виробник: IXYS
Description: MOSFET P-CH 100V 210A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 105A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 69500 pF @ 25 V
на замовлення 642 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3241.95 грн
10+2357.65 грн
100+2215.80 грн
В кошику  од. на суму  грн.
IXTQ36N30P littelfuse-discrete-mosfets-ixt-36n30p-datasheet?assetguid=bf954b1e-fc82-433f-b03c-f41721f34fc0
IXTQ36N30P
Виробник: IXYS
Description: MOSFET N-CH 300V 36A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
на замовлення 304 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+416.96 грн
30+228.65 грн
120+190.61 грн
В кошику  од. на суму  грн.
IXFN360N10T Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXFN360N10T-Datasheet.PDF?assetguid=266AF6DA-14C9-4348-BA01-DC3A8F4611CB
IXFN360N10T
Виробник: IXYS
Description: MOSFET N-CH 100V 360A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 180A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 505 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 36000 pF @ 25 V
на замовлення 772 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1891.14 грн
10+1331.91 грн
100+1132.21 грн
В кошику  од. на суму  грн.
IXFP18N65X2M littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfp18n65x2m_datasheet.pdf?assetguid=1472e3a2-00ef-43b9-be11-5dfc49693d88
IXFP18N65X2M
Виробник: IXYS
Description: MOSFET N-CH 650V 18A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-220 Isolated Tab
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXFA18N65X2 littelfuse-discrete-mosfets-ixf-18n65x2-datasheet?assetguid=caf1a2be-4d45-4d83-bc47-d506e7353176
IXFA18N65X2
Виробник: IXYS
Description: MOSFET N-CH 650V 18A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXFH18N65X2 littelfuse-discrete-mosfets-ixf-18n65x2-datasheet?assetguid=caf1a2be-4d45-4d83-bc47-d506e7353176
IXFH18N65X2
Виробник: IXYS
Description: MOSFET N-CH 650V 18A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXTH60N20L2 littelfuse-discrete-mosfets-ixt-60n20-datasheet?assetguid=963578f0-6c06-4c5b-abb1-606983fd5867
IXTH60N20L2
Виробник: IXYS
Description: MOSFET N-CH 200V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1337.54 грн
30+810.27 грн
120+729.89 грн
В кошику  од. на суму  грн.
IXTQ60N20T littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_60n20t_datasheet.pdf?assetguid=a2bc6b7d-dab8-4007-9c70-5b1fc95634b1
IXTQ60N20T
Виробник: IXYS
Description: MOSFET N-CH 200V 60A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 10V
Power Dissipation (Max): 500W (Ta)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4530 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXTA60N20T-TRL littelfuse-discrete-mosfets-ixt-60n20t-datasheet?assetguid=a2bc6b7d-dab8-4007-9c70-5b1fc95634b1
IXTA60N20T-TRL
Виробник: IXYS
Description: MOSFET N-CH 200V 60A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4530 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXTH110N10L2 PdfFile135152.pdf
IXTH110N10L2
Виробник: IXYS
Description: MOSFET N-CH 100V 110A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 500mA, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
на замовлення 1950 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1337.54 грн
30+810.27 грн
120+729.89 грн
В кошику  од. на суму  грн.
IXFH110N10P littelfuse-discrete-mosfets-ixfh110n10p-datasheet?assetguid=eea29d76-c01c-4f16-9d4c-b0769d445f2f
IXFH110N10P
Виробник: IXYS
Description: MOSFET N-CH 100V 110A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 500mA, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXTT110N10L2-TRL PdfFile135152.pdf
IXTT110N10L2-TRL
Виробник: IXYS
Description: MOSFET N-CH 100V 110A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 55A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268 (IXTT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXTT110N10L2-TRL PdfFile135152.pdf
IXTT110N10L2-TRL
Виробник: IXYS
Description: MOSFET N-CH 100V 110A TO268
Packaging: Cut Tape (CT)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 55A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268 (IXTT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXFB60N80P 99560.pdf
IXFB60N80P
Виробник: IXYS
Description: MOSFET N-CH 800V 60A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 30A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS264™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXFK32N80P 99425.pdf
IXFK32N80P
Виробник: IXYS
Description: MOSFET N-CH 800V 32A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 16A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1161.07 грн
25+709.52 грн
100+612.54 грн
В кошику  од. на суму  грн.
IXFA10N80P-TRL littelfuse-discrete-mosfets-ixf-10n80p-datasheet?assetguid=a565a5d2-4577-4a3a-8c98-1b06bc0768c1
IXFA10N80P-TRL
Виробник: IXYS
Description: MOSFET N-CH 800V 10A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
MCNA220PD2200YB littelfuse-power-semiconductors-mcna220pd2200yb-datasheet?assetguid=bed999c7-e39c-47e6-b233-4a7c0647b7f8
MCNA220PD2200YB
Виробник: IXYS
Description: SCR MODULE 2.2KV 345A Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7200A, 7780A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 220 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 345 A
Voltage - Off State: 2.2 kV
товару немає в наявності
В кошику  од. на суму  грн.
MCNA40PD2200TB media?resourcetype=datasheets&itemid=AA91350D-9182-4A62-AB0E-51F3B9201283&filename=Littelfuse-Power-Semiconductors-MCNA40PD2200TB-Datasheet
MCNA40PD2200TB
Виробник: IXYS
Description: SCR MODULE 2.2KV 63A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 70 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 500A, 540A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 40 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 63 A
Voltage - Off State: 2.2 kV
товару немає в наявності
В кошику  од. на суму  грн.
MCNA55PD2200TB media?resourcetype=datasheets&itemid=170F279D-DA7D-4C1E-BA38-C51A726043BB&filename=Littelfuse-Power-Semiconductors-MCNA55PD2200TB-Datasheet
MCNA55PD2200TB
Виробник: IXYS
Description: SCR MODULE 2.2KV 86A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1000A, 1080A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 55 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 86 A
Voltage - Off State: 2.2 kV
товару немає в наявності
В кошику  од. на суму  грн.
MCNA75PD2200TB media?resourcetype=datasheets&itemid=8959BE89-6337-4D3B-9F1A-3F2023F2125E&filename=Littelfuse-Power-Semiconductors-MCNA75PD2200TB-Datasheet
MCNA75PD2200TB
Виробник: IXYS
Description: SCR MODULE 2.2KV 118A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1400A, 1510A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 75 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 118 A
Voltage - Off State: 2.2 kV
товару немає в наявності
В кошику  од. на суму  грн.
MCNA95PD2200TB media?resourcetype=datasheets&itemid=FBECFD23-7EC3-4098-8B34-555EACFFB215&filename=Littelfuse-Power-Semiconductors-MCNA95PD2200TB-Datasheet
MCNA95PD2200TB
Виробник: IXYS
Description: SCR MODULE 2.2KV 149A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1700A, 1840A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 95 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 149 A
Voltage - Off State: 2.2 kV
на замовлення 72 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
36+2416.67 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
MCNA650PD2200CB media?resourcetype=datasheets&itemid=CBDA49D5-9FD9-49E5-A455-70AC7F88D31C&filename=Littelfuse-Power-Semiconductors-MCNA650PD2200CB-Datasheet
MCNA650PD2200CB
Виробник: IXYS
Description: SCR MODULE 2.2KV 1200A COMPACK
Packaging: Box
Package / Case: ComPack
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16000A, 17300A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 650 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 1200 A
Voltage - Off State: 2.2 kV
товару немає в наявності
В кошику  од. на суму  грн.
IXKH70N60C5 IXKH70N60C5.pdf
IXKH70N60C5
Виробник: IXYS
Description: MOSFET N-CH 600V 70A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IXTA80N10T-TRL littelfuse-discrete-mosfets-ixtp80n10t-datasheet?assetguid=97c849e2-6910-43ce-9bda-8b33b853f553
IXTA80N10T-TRL
Виробник: IXYS
Description: MOSFET N-CH 100V 80A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXTA180N10T7-TRL littelfuse-discrete-mosfets-ixta180n10t7-datasheet?assetguid=63142f38-9ba5-4484-ab78-644b1c6ee8aa
IXTA180N10T7-TRL
Виробник: IXYS
Description: MOSFET N-CH 100V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXFA180N10T2-TRL littelfuse-discrete-mosfets-ixf-180n10t2-datasheet?assetguid=fe756911-5a6e-4383-b388-3883df0a0b48
IXFA180N10T2-TRL
Виробник: IXYS
Description: MOSFET N-CH 100V 180A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXTP4N70X2M ixty2n65x2.pdf
IXTP4N70X2M
Виробник: IXYS
Description: MOSFET N-CH 700V 4A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXTU4N70X2 ixty2n65x2.pdf
IXTU4N70X2
Виробник: IXYS
Description: MOSFET N-CH 700V 4A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXTA4N70X2 ixty2n65x2.pdf
IXTA4N70X2
Виробник: IXYS
Description: MOSFET N-CH 700V 4A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXTA90N20X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixta90n20x3_datasheet.pdf?assetguid=0d436688-a336-4e6b-a404-a707c9c33210
IXTA90N20X3
Виробник: IXYS
Description: MOSFET N-CH 200V 90A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 45A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5420 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXFA90N20X3-TRL littelfuse-discrete-mosfets-ixfa90n20x3-datasheet?assetguid=931087c8-e197-4323-a05d-f63953bc30e1
IXFA90N20X3-TRL
Виробник: IXYS
Description: MOSFET N-CH 200V 90A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 45A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5420 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXFH12N100F littelfuse-discrete-mosfets-ixfh12n100-datasheet?assetguid=cefb7be4-73a0-469a-adea-87ac18070cb1
IXFH12N100F
Виробник: IXYS
Description: MOSFET N-CH 1000V 12A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 6A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
на замовлення 858 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+890.13 грн
30+520.21 грн
120+446.41 грн
510+405.62 грн
В кошику  од. на суму  грн.
IXFT180N20X3HV littelfuse-discrete-mosfets-ixf-180n20x3-datasheet?assetguid=e776435a-0ad7-472c-a5ba-3ce355c07926
IXFT180N20X3HV
Виробник: IXYS
Description: MOSFET N-CH 200V 180A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 90A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
на замовлення 271 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1243.06 грн
30+748.06 грн
120+665.03 грн
В кошику  од. на суму  грн.
IXTT80N20L littelfuse-discrete-mosfets-ixt-80n20l-datasheet?assetguid=336ee21c-0426-4737-a5c8-6c7350c8a845
IXTT80N20L
Виробник: IXYS
Description: MOSFET N-CH 200V 80A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 40A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6160 pF @ 25 V
на замовлення 915 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1435.14 грн
30+875.31 грн
120+799.68 грн
В кошику  од. на суму  грн.
IXTH80N20L DS100294IXTHTT80N20L.pdf
IXTH80N20L
Виробник: IXYS
Description: MOSFET N-CH 200V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 40A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6160 pF @ 25 V
на замовлення 24 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1066.59 грн
В кошику  од. на суму  грн.
IXSG40N65L2K power-semiconductor-sic-mosfet-ixsg40n65l2k-datasheet?assetguid=15bde63b-8e75-40b2-8290-b484f25a2b34
IXSG40N65L2K
Виробник: IXYS
Description: 650V 60M (40A @ 25C) SIC MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 15A, 18V
Power Dissipation (Max): 174W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1218 pF @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
IXSG40N65L2K power-semiconductor-sic-mosfet-ixsg40n65l2k-datasheet?assetguid=15bde63b-8e75-40b2-8290-b484f25a2b34
IXSG40N65L2K
Виробник: IXYS
Description: 650V 60M (40A @ 25C) SIC MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 15A, 18V
Power Dissipation (Max): 174W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1218 pF @ 600 V
на замовлення 1966 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+495.82 грн
10+323.32 грн
100+244.30 грн
В кошику  од. на суму  грн.
IXTX120P20T littelfuse_discrete_mosfets_p-channel_ixt_120p20t_datasheet.pdf?assetguid=67b5be5e-bc83-47b6-b9a2-f0699eb6249e
IXTX120P20T
Виробник: IXYS
Description: MOSFET P-CH 200V 120A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 60A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PLUS247™-3
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 73000 pF @ 25 V
на замовлення 317 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2051.20 грн
30+1287.90 грн
120+1248.87 грн
В кошику  од. на суму  грн.
IXFK64N60P3 DS100312BIXFKFX64N60P3.pdf
IXFK64N60P3
Виробник: IXYS
Description: MOSFET N-CH 600V 64A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 32A, 10V
Power Dissipation (Max): 1130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 25 V
на замовлення 650 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1212.61 грн
25+742.75 грн
100+641.78 грн
500+601.71 грн
В кошику  од. на суму  грн.
IXFK220N17T2 DS100230IXFKFX220N17T2.pdf
IXFK220N17T2
Виробник: IXYS
Description: MOSFET N-CH 170V 220A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 60A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 170 V
Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 31000 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1049.42 грн
25+635.11 грн
100+545.87 грн
В кошику  од. на суму  грн.
GUO40-12NO1 Littelfuse_Power_Semiconductors_GUO40_12NO1_Datasheet.pdf
GUO40-12NO1
Виробник: IXYS
Bridge Rectifiers 40 Amps 1200V
на замовлення 1801 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1445.38 грн
10+1093.49 грн
В кошику  од. на суму  грн.
FBE22-06N1 media-3319454.pdf
FBE22-06N1
Виробник: IXYS
Bridge Rectifiers RECTIFIER BRIDGE ISOPLUS i4-PAC
на замовлення 513 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1061.56 грн
10+1029.64 грн
25+726.68 грн
В кошику  од. на суму  грн.
VUO190-08NO7 media-3323304.pdf
VUO190-08NO7
Виробник: IXYS
Bridge Rectifiers 190 Amps 800V
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+5644.66 грн
10+5225.60 грн
25+4415.60 грн
50+4381.59 грн
100+4219.88 грн
В кошику  од. на суму  грн.
VUB72-16NOXT media-3319306.pdf
VUB72-16NOXT
Виробник: IXYS
Bridge Rectifiers Standard Rectifier Bridge+Brake Unit
на замовлення 38 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+3854.34 грн
10+3419.35 грн
24+2740.14 грн
48+2674.90 грн
120+2375.76 грн
В кошику  од. на суму  грн.
Обрати Сторінку:   [  << Попередня Сторінка ]  1 24 48 72 96 101 102 103 104 105 106 107 108 109 110 111 120 144 168 192 216 240 243  [ Наступна Сторінка >> ]