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IXGN200N60A2 IXGN200N60A2 IXYS 99087.pdf Description: IGBT MOD 600V 200A 700W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 700 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 9.9 nF @ 25 V
товар відсутній
IXGN200N60B IXGN200N60B IXYS 98606.pdf Description: IGBT MOD 600V 200A 600W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 120A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
товар відсутній
IXGR120N60B IXGR120N60B IXYS littelfuse_discrete_igbts_pt_ixgr120n60b_datasheet.pdf.pdf Description: IGBT 600V 156A 520W ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Td (on/off) @ 25°C: 60ns/200ns
Switching Energy: 2.4mJ (on), 5.5mJ (off)
Test Condition: 480V, 100A, 2.4Ohm, 15V
Gate Charge: 350 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 156 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 520 W
товар відсутній
IXKH20N60C5 IXKH20N60C5 IXYS littelfuse_discrete_mosfets_n-channel_super_junction_ixk_20n60c5_datasheet.pdf.pdf Description: MOSFET N-CH 600V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V
товар відсутній
IXKH24N60C5 IXKH24N60C5 IXYS littelfuse_discrete_mosfets_n-channel_super_junction_ixk_24n60c5_datasheet.pdf.pdf Description: MOSFET N-CH 600V 24A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 790µA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
товар відсутній
IXKH30N60C5 IXKH30N60C5 IXYS littelfuse_discrete_mosfets_n-channel_super_junction_ixkh30n60c5_datasheet.pdf.pdf Description: MOSFET N-CH 600V 30A TO247AD
товар відсутній
IXKH35N60C5 IXKH35N60C5 IXYS littelfuse_discrete_mosfets_n-channel_super_junction_ixkh35n60c5_datasheet.pdf.pdf Description: MOSFET N-CH 600V 35A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 1.2mA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
на замовлення 117 шт:
термін постачання 21-31 дні (днів)
1+739.83 грн
30+ 576.7 грн
IXKH70N60C5 IXKH70N60C5 IXYS littelfuse_discrete_mosfets_n-channel_super_junction_ixkh70n60c5_datasheet.pdf.pdf Description: MOSFET N-CH 600V 70A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
на замовлення 301 шт:
термін постачання 21-31 дні (днів)
1+1488.09 грн
10+ 1273.05 грн
100+ 1113.45 грн
IXKP10N60C5 IXKP10N60C5 IXYS IXKP_10N60C5.pdf Description: MOSFET N-CH 600V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 340µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V
товар відсутній
IXKP10N60C5M IXKP10N60C5M IXYS IXKP10N60C5M.pdf Description: MOSFET N-CH 600V 5.4A TO220ABFP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 340µA
Supplier Device Package: TO-220ABFP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V
товар відсутній
IXKP13N60C5 IXKP13N60C5 IXYS IXKP13N60C5.pdf Description: MOSFET N-CH 600V 13A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
товар відсутній
IXKP13N60C5M IXKP13N60C5M IXYS IXKP13N60C5M.pdf Description: MOSFET N-CH 600V 6.5A TO220ABFP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: TO-220ABFP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
товар відсутній
IXKP20N60C5 IXKP20N60C5 IXYS littelfuse_discrete_mosfets_n-channel_super_junction_ixk_20n60c5_datasheet.pdf.pdf Description: MOSFET N-CH 600V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V
товар відсутній
IXKP20N60C5M IXKP20N60C5M IXYS IXKP20N60C5M.pdf Description: MOSFET N-CH 600V 7.6A TO220ABFP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
Supplier Device Package: TO-220ABFP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V
товар відсутній
IXKP24N60C5 IXKP24N60C5 IXYS littelfuse_discrete_mosfets_n-channel_super_junction_ixk_24n60c5_datasheet.pdf.pdf Description: MOSFET N-CH 600V 24A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 790µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
товар відсутній
IXKP24N60C5M IXKP24N60C5M IXYS IXKP24N60C5M.pdf Description: MOSFET N-CH 600V 8.5A TO220ABFP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 790µA
Supplier Device Package: TO-220ABFP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
товар відсутній
IXSH25N120A IXSH25N120A IXYS 95593.pdf Description: IGBT 1200V 50A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/450ns
Switching Energy: 9.6mJ (off)
Test Condition: 960V, 25A, 18Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 200 W
товар відсутній
IXSH30N60B IXSH30N60B IXYS 98519.pdf Description: IGBT 600V 55A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/150ns
Switching Energy: 1.5mJ (off)
Test Condition: 480V, 30A, 4.7Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 200 W
товар відсутній
IXSH30N60C IXSH30N60C IXYS 98519.pdf Description: IGBT 600V 55A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/90ns
Switching Energy: 700µJ (off)
Test Condition: 480V, 30A, 4.7Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 200 W
товар відсутній
IXSN52N60AU1 IXSN52N60AU1 IXYS DS92814(IXSN52N60AU1).pdf Description: IGBT MOD 600V 80A 250W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 40A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 750 µA
Input Capacitance (Cies) @ Vce: 4.5 nF @ 25 V
товар відсутній
IXST30N60B IXST30N60B IXYS 98519.pdf Description: IGBT 600V 55A 200W TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-268AA
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/150ns
Switching Energy: 1.5mJ (off)
Test Condition: 480V, 30A, 4.7Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 200 W
товар відсутній
IXTA08N100P IXTA08N100P IXYS DS99865D(IXTY-TA-TP08N100P).pdf Description: MOSFET N-CH 1000V 0.8A TO-263
товар відсутній
IXTA08N120P IXTA08N120P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_08n120p_datasheet.pdf.pdf Description: MOSFET N-CH 1200V 800MA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 25Ohm @ 500mA, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 333 pF @ 25 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
2+258.31 грн
50+ 197.1 грн
100+ 168.95 грн
500+ 140.93 грн
1000+ 120.67 грн
Мінімальне замовлення: 2
IXTA1N100P IXTA1N100P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_1n100p_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 1A TO263
на замовлення 52 шт:
термін постачання 21-31 дні (днів)
2+192.33 грн
10+ 166.21 грн
Мінімальне замовлення: 2
IXTA1R4N100P IXTA1R4N100P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_1r4n100p_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 1.4A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
на замовлення 620 шт:
термін постачання 21-31 дні (днів)
2+207.07 грн
50+ 157.68 грн
100+ 135.15 грн
500+ 112.75 грн
Мінімальне замовлення: 2
IXTA1R4N120P IXTA1R4N120P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_1r4n120p_datasheet.pdf.pdf Description: MOSFET N-CH 1200V 1.4A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 13Ohm @ 500mA, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 25 V
на замовлення 28 шт:
термін постачання 21-31 дні (днів)
1+367.11 грн
10+ 296.94 грн
IXTA2N100P IXTA2N100P IXYS DS99817C(IXTY-TA-TP2N100P).pdf Description: MOSFET N-CH 1000V 2A TO-263
товар відсутній
IXTA2R4N120P IXTA2R4N120P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_2r4n120p_datasheet.pdf.pdf Description: MOSFET N-CH 1200V 2.4A TO263
на замовлення 55 шт:
термін постачання 21-31 дні (днів)
1+448.53 грн
10+ 390.08 грн
IXTA3N100P IXTA3N100P IXYS DS99767B(IXTA-TP-TH3N100P).pdf Description: MOSFET N-CH 1000V 3A TO-263
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
IXTA90N15T IXTA90N15T IXYS DS99857%28IXTA-H-P-Q90N15T%29.pdf Description: MOSFET N-CH 150V 90A TO-263
товар відсутній
IXTC110N25T IXYS DS99841C(IXTC110N25T).pdf Description: MOSFET N-CH 250V 50A ISOPLUS220
товар відсутній
IXTH102N15T IXTH102N15T IXYS DS99661C(IXTA-TH-TP-TQ102N15T).pdf Description: MOSFET N-CH 150V 102A TO-247
товар відсутній
IXTH102N20T IXTH102N20T IXYS DS99821A(IXTH-TQ102N20T).pdf Description: MOSFET N-CH 200V 102A TO-247
товар відсутній
IXTH2R4N120P IXTH2R4N120P IXYS DS99873B(IXTA-H-P2R4N120P).pdf Description: MOSFET N-CH 1200V 2.4A TO247
на замовлення 780 шт:
термін постачання 21-31 дні (днів)
IXTH3N100P IXTH3N100P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_3n100p_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 3A TO247
товар відсутній
IXTH90N15T IXTH90N15T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixtp90n15t_datasheet.pdf.pdf Description: MOSFET N-CH 150V 90A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 45A, 10V
Power Dissipation (Max): 455W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V
товар відсутній
IXTP08N100P IXTP08N100P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_08n100p_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 800MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
на замовлення 285 шт:
термін постачання 21-31 дні (днів)
2+181.8 грн
50+ 140.16 грн
100+ 115.32 грн
Мінімальне замовлення: 2
IXTP08N120P IXTP08N120P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_08n120p_datasheet.pdf.pdf Description: MOSFET N-CH 1200V 800MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 25Ohm @ 500mA, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 333 pF @ 25 V
на замовлення 700 шт:
термін постачання 21-31 дні (днів)
300+164.01 грн
Мінімальне замовлення: 300
IXTP1N100P IXTP1N100P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_1n100p_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 1A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 15Ohm @ 500mA, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 331 pF @ 25 V
на замовлення 142 шт:
термін постачання 21-31 дні (днів)
2+181.8 грн
50+ 140.16 грн
100+ 115.32 грн
Мінімальне замовлення: 2
IXTP1R4N100P IXTP1R4N100P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_1r4n100p_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 1.4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
50+153.13 грн
Мінімальне замовлення: 50
IXTP1R4N120P IXTP1R4N120P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_1r4n120p_datasheet.pdf.pdf Description: MOSFET N-CH 1200V 1.4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 13Ohm @ 500mA, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 25 V
на замовлення 708 шт:
термін постачання 21-31 дні (днів)
1+360.09 грн
10+ 291.12 грн
100+ 235.52 грн
500+ 196.47 грн
IXTP2N100P IXTP2N100P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_2n100p_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 24.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 25 V
на замовлення 136 шт:
термін постачання 21-31 дні (днів)
2+219.7 грн
50+ 167.55 грн
100+ 143.62 грн
Мінімальне замовлення: 2
IXTP2R4N120P IXTP2R4N120P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_2r4n120p_datasheet.pdf.pdf Description: MOSFET N-CH 1200V 2.4A TO220AB
товар відсутній
IXTP36N30P IXTP36N30P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_36n30p_datasheet.pdf.pdf Description: MOSFET N-CH 300V 36A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
на замовлення 771 шт:
термін постачання 21-31 дні (днів)
1+309.55 грн
50+ 236.54 грн
100+ 202.74 грн
500+ 169.12 грн
IXTP90N15T IXTP90N15T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixtp90n15t_datasheet.pdf.pdf Description: MOSFET N-CH 150V 90A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 45A, 10V
Power Dissipation (Max): 455W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V
на замовлення 1608 шт:
термін постачання 21-31 дні (днів)
1+308.15 грн
10+ 266.59 грн
100+ 218.43 грн
500+ 174.5 грн
1000+ 147.17 грн
IXTQ102N20T IXTQ102N20T IXYS Description: MOSFET N-CH 200V 102A TO3P
товар відсутній
IXTQ90N15T IXTQ90N15T IXYS DS99857(IXTA-H-P-Q90N15T).pdf Description: MOSFET N-CH 150V 90A TO-3P
товар відсутній
IXTV102N20T IXYS IXT(H,Q,V)102N20T.pdf Description: MOSFET N-CH 200V 102A PLUS220
товар відсутній
IXTV110N25TS IXTV110N25TS IXYS DS99904B(IXTH-V110N25T-S).pdf Description: MOSFET N-CH 250V 110A PLUS220SMD
товар відсутній
IXTX17N120L IXTX17N120L IXYS DS99615B(IXTK-TX17N120L).pdf Description: MOSFET N-CH 1200V 17A PLUS247
товар відсутній
IXTY08N100P IXTY08N100P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_08n100p_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 800MA TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
на замовлення 1682 шт:
термін постачання 21-31 дні (днів)
2+219.7 грн
70+ 167.54 грн
140+ 143.61 грн
560+ 119.8 грн
1050+ 102.58 грн
Мінімальне замовлення: 2
IXTY1N100P IXTY1N100P IXYS DS99234G(IXTA-TP-TY1N100P).pdf Description: MOSFET N-CH 1000V 1A TO-252
товар відсутній
IXTY1R4N100P IXTY1R4N100P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_1r4n100p_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 1.4A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
товар відсутній
IXTY2N100P IXTY2N100P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_2n100p_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 2A TO252
на замовлення 980 шт:
термін постачання 21-31 дні (днів)
IXUC160N075 IXUC160N075 IXYS 98830.pdf Description: MOSFET N-CH 75V 160A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2mA
Supplier Device Package: ISOPLUS220™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
товар відсутній
LKK47-06C5 IXYS littelfuse_discrete_mosfets_n-channel_super_junction_lkk47-06c5_datasheet.pdf.pdf Description: MOSFET 2N-CH 600V 47A ISOPLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 47A
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
FET Feature: Super Junction
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: ISOPLUS264™
Part Status: Active
товар відсутній
MCD220-18io1 IXYS L083.pdf Description: SCR MOD 1800V Y2-DCB
товар відсутній
MCO75-12io1 IXYS MCO75-12IO1.pdf Description: MOD THYRISTOR SGL 1200V SOT-227B
товар відсутній
MCO75-16io1 IXYS MCO75-16IO1.pdf Description: MOD THYRISTOR SGL 1600V SOT-227B
на замовлення 560 шт:
термін постачання 21-31 дні (днів)
1+1508.44 грн
10+ 1339.97 грн
100+ 1144.22 грн
500+ 999.69 грн
MDD200-22N1 IXYS MDD200-22N1.pdf Description: DIODE MODULE GP 2200V 224A Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 224A
Supplier Device Package: Y4-M6
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 20 mA @ 2200 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+6256.29 грн
IXGN200N60A2 99087.pdf
IXGN200N60A2
Виробник: IXYS
Description: IGBT MOD 600V 200A 700W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 700 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 9.9 nF @ 25 V
товар відсутній
IXGN200N60B 98606.pdf
IXGN200N60B
Виробник: IXYS
Description: IGBT MOD 600V 200A 600W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 120A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
товар відсутній
IXGR120N60B littelfuse_discrete_igbts_pt_ixgr120n60b_datasheet.pdf.pdf
IXGR120N60B
Виробник: IXYS
Description: IGBT 600V 156A 520W ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Td (on/off) @ 25°C: 60ns/200ns
Switching Energy: 2.4mJ (on), 5.5mJ (off)
Test Condition: 480V, 100A, 2.4Ohm, 15V
Gate Charge: 350 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 156 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 520 W
товар відсутній
IXKH20N60C5 littelfuse_discrete_mosfets_n-channel_super_junction_ixk_20n60c5_datasheet.pdf.pdf
IXKH20N60C5
Виробник: IXYS
Description: MOSFET N-CH 600V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V
товар відсутній
IXKH24N60C5 littelfuse_discrete_mosfets_n-channel_super_junction_ixk_24n60c5_datasheet.pdf.pdf
IXKH24N60C5
Виробник: IXYS
Description: MOSFET N-CH 600V 24A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 790µA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
товар відсутній
IXKH30N60C5 littelfuse_discrete_mosfets_n-channel_super_junction_ixkh30n60c5_datasheet.pdf.pdf
IXKH30N60C5
Виробник: IXYS
Description: MOSFET N-CH 600V 30A TO247AD
товар відсутній
IXKH35N60C5 littelfuse_discrete_mosfets_n-channel_super_junction_ixkh35n60c5_datasheet.pdf.pdf
IXKH35N60C5
Виробник: IXYS
Description: MOSFET N-CH 600V 35A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 1.2mA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
на замовлення 117 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+739.83 грн
30+ 576.7 грн
IXKH70N60C5 littelfuse_discrete_mosfets_n-channel_super_junction_ixkh70n60c5_datasheet.pdf.pdf
IXKH70N60C5
Виробник: IXYS
Description: MOSFET N-CH 600V 70A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
на замовлення 301 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1488.09 грн
10+ 1273.05 грн
100+ 1113.45 грн
IXKP10N60C5 IXKP_10N60C5.pdf
IXKP10N60C5
Виробник: IXYS
Description: MOSFET N-CH 600V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 340µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V
товар відсутній
IXKP10N60C5M IXKP10N60C5M.pdf
IXKP10N60C5M
Виробник: IXYS
Description: MOSFET N-CH 600V 5.4A TO220ABFP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 340µA
Supplier Device Package: TO-220ABFP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V
товар відсутній
IXKP13N60C5 IXKP13N60C5.pdf
IXKP13N60C5
Виробник: IXYS
Description: MOSFET N-CH 600V 13A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
товар відсутній
IXKP13N60C5M IXKP13N60C5M.pdf
IXKP13N60C5M
Виробник: IXYS
Description: MOSFET N-CH 600V 6.5A TO220ABFP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: TO-220ABFP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
товар відсутній
IXKP20N60C5 littelfuse_discrete_mosfets_n-channel_super_junction_ixk_20n60c5_datasheet.pdf.pdf
IXKP20N60C5
Виробник: IXYS
Description: MOSFET N-CH 600V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V
товар відсутній
IXKP20N60C5M IXKP20N60C5M.pdf
IXKP20N60C5M
Виробник: IXYS
Description: MOSFET N-CH 600V 7.6A TO220ABFP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
Supplier Device Package: TO-220ABFP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V
товар відсутній
IXKP24N60C5 littelfuse_discrete_mosfets_n-channel_super_junction_ixk_24n60c5_datasheet.pdf.pdf
IXKP24N60C5
Виробник: IXYS
Description: MOSFET N-CH 600V 24A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 790µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
товар відсутній
IXKP24N60C5M IXKP24N60C5M.pdf
IXKP24N60C5M
Виробник: IXYS
Description: MOSFET N-CH 600V 8.5A TO220ABFP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 790µA
Supplier Device Package: TO-220ABFP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
товар відсутній
IXSH25N120A 95593.pdf
IXSH25N120A
Виробник: IXYS
Description: IGBT 1200V 50A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/450ns
Switching Energy: 9.6mJ (off)
Test Condition: 960V, 25A, 18Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 200 W
товар відсутній
IXSH30N60B 98519.pdf
IXSH30N60B
Виробник: IXYS
Description: IGBT 600V 55A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/150ns
Switching Energy: 1.5mJ (off)
Test Condition: 480V, 30A, 4.7Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 200 W
товар відсутній
IXSH30N60C 98519.pdf
IXSH30N60C
Виробник: IXYS
Description: IGBT 600V 55A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/90ns
Switching Energy: 700µJ (off)
Test Condition: 480V, 30A, 4.7Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 200 W
товар відсутній
IXSN52N60AU1 DS92814(IXSN52N60AU1).pdf
IXSN52N60AU1
Виробник: IXYS
Description: IGBT MOD 600V 80A 250W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 40A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 750 µA
Input Capacitance (Cies) @ Vce: 4.5 nF @ 25 V
товар відсутній
IXST30N60B 98519.pdf
IXST30N60B
Виробник: IXYS
Description: IGBT 600V 55A 200W TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-268AA
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/150ns
Switching Energy: 1.5mJ (off)
Test Condition: 480V, 30A, 4.7Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 200 W
товар відсутній
IXTA08N100P DS99865D(IXTY-TA-TP08N100P).pdf
IXTA08N100P
Виробник: IXYS
Description: MOSFET N-CH 1000V 0.8A TO-263
товар відсутній
IXTA08N120P littelfuse_discrete_mosfets_n-channel_standard_ixt_08n120p_datasheet.pdf.pdf
IXTA08N120P
Виробник: IXYS
Description: MOSFET N-CH 1200V 800MA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 25Ohm @ 500mA, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 333 pF @ 25 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+258.31 грн
50+ 197.1 грн
100+ 168.95 грн
500+ 140.93 грн
1000+ 120.67 грн
Мінімальне замовлення: 2
IXTA1N100P littelfuse_discrete_mosfets_n-channel_standard_ixt_1n100p_datasheet.pdf.pdf
IXTA1N100P
Виробник: IXYS
Description: MOSFET N-CH 1000V 1A TO263
на замовлення 52 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+192.33 грн
10+ 166.21 грн
Мінімальне замовлення: 2
IXTA1R4N100P littelfuse_discrete_mosfets_n-channel_standard_ixt_1r4n100p_datasheet.pdf.pdf
IXTA1R4N100P
Виробник: IXYS
Description: MOSFET N-CH 1000V 1.4A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
на замовлення 620 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+207.07 грн
50+ 157.68 грн
100+ 135.15 грн
500+ 112.75 грн
Мінімальне замовлення: 2
IXTA1R4N120P littelfuse_discrete_mosfets_n-channel_standard_ixt_1r4n120p_datasheet.pdf.pdf
IXTA1R4N120P
Виробник: IXYS
Description: MOSFET N-CH 1200V 1.4A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 13Ohm @ 500mA, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 25 V
на замовлення 28 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+367.11 грн
10+ 296.94 грн
IXTA2N100P DS99817C(IXTY-TA-TP2N100P).pdf
IXTA2N100P
Виробник: IXYS
Description: MOSFET N-CH 1000V 2A TO-263
товар відсутній
IXTA2R4N120P littelfuse_discrete_mosfets_n-channel_standard_ixt_2r4n120p_datasheet.pdf.pdf
IXTA2R4N120P
Виробник: IXYS
Description: MOSFET N-CH 1200V 2.4A TO263
на замовлення 55 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+448.53 грн
10+ 390.08 грн
IXTA3N100P DS99767B(IXTA-TP-TH3N100P).pdf
IXTA3N100P
Виробник: IXYS
Description: MOSFET N-CH 1000V 3A TO-263
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
IXTA90N15T DS99857%28IXTA-H-P-Q90N15T%29.pdf
IXTA90N15T
Виробник: IXYS
Description: MOSFET N-CH 150V 90A TO-263
товар відсутній
IXTC110N25T DS99841C(IXTC110N25T).pdf
Виробник: IXYS
Description: MOSFET N-CH 250V 50A ISOPLUS220
товар відсутній
IXTH102N15T DS99661C(IXTA-TH-TP-TQ102N15T).pdf
IXTH102N15T
Виробник: IXYS
Description: MOSFET N-CH 150V 102A TO-247
товар відсутній
IXTH102N20T DS99821A(IXTH-TQ102N20T).pdf
IXTH102N20T
Виробник: IXYS
Description: MOSFET N-CH 200V 102A TO-247
товар відсутній
IXTH2R4N120P DS99873B(IXTA-H-P2R4N120P).pdf
IXTH2R4N120P
Виробник: IXYS
Description: MOSFET N-CH 1200V 2.4A TO247
на замовлення 780 шт:
термін постачання 21-31 дні (днів)
IXTH3N100P littelfuse_discrete_mosfets_n-channel_standard_ixt_3n100p_datasheet.pdf.pdf
IXTH3N100P
Виробник: IXYS
Description: MOSFET N-CH 1000V 3A TO247
товар відсутній
IXTH90N15T littelfuse_discrete_mosfets_n-channel_trench_gate_ixtp90n15t_datasheet.pdf.pdf
IXTH90N15T
Виробник: IXYS
Description: MOSFET N-CH 150V 90A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 45A, 10V
Power Dissipation (Max): 455W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V
товар відсутній
IXTP08N100P littelfuse_discrete_mosfets_n-channel_standard_ixt_08n100p_datasheet.pdf.pdf
IXTP08N100P
Виробник: IXYS
Description: MOSFET N-CH 1000V 800MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
на замовлення 285 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+181.8 грн
50+ 140.16 грн
100+ 115.32 грн
Мінімальне замовлення: 2
IXTP08N120P littelfuse_discrete_mosfets_n-channel_standard_ixt_08n120p_datasheet.pdf.pdf
IXTP08N120P
Виробник: IXYS
Description: MOSFET N-CH 1200V 800MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 25Ohm @ 500mA, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 333 pF @ 25 V
на замовлення 700 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
300+164.01 грн
Мінімальне замовлення: 300
IXTP1N100P littelfuse_discrete_mosfets_n-channel_standard_ixt_1n100p_datasheet.pdf.pdf
IXTP1N100P
Виробник: IXYS
Description: MOSFET N-CH 1000V 1A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 15Ohm @ 500mA, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 331 pF @ 25 V
на замовлення 142 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+181.8 грн
50+ 140.16 грн
100+ 115.32 грн
Мінімальне замовлення: 2
IXTP1R4N100P littelfuse_discrete_mosfets_n-channel_standard_ixt_1r4n100p_datasheet.pdf.pdf
IXTP1R4N100P
Виробник: IXYS
Description: MOSFET N-CH 1000V 1.4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
50+153.13 грн
Мінімальне замовлення: 50
IXTP1R4N120P littelfuse_discrete_mosfets_n-channel_standard_ixt_1r4n120p_datasheet.pdf.pdf
IXTP1R4N120P
Виробник: IXYS
Description: MOSFET N-CH 1200V 1.4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 13Ohm @ 500mA, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 25 V
на замовлення 708 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+360.09 грн
10+ 291.12 грн
100+ 235.52 грн
500+ 196.47 грн
IXTP2N100P littelfuse_discrete_mosfets_n-channel_standard_ixt_2n100p_datasheet.pdf.pdf
IXTP2N100P
Виробник: IXYS
Description: MOSFET N-CH 1000V 2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 24.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 25 V
на замовлення 136 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+219.7 грн
50+ 167.55 грн
100+ 143.62 грн
Мінімальне замовлення: 2
IXTP2R4N120P littelfuse_discrete_mosfets_n-channel_standard_ixt_2r4n120p_datasheet.pdf.pdf
IXTP2R4N120P
Виробник: IXYS
Description: MOSFET N-CH 1200V 2.4A TO220AB
товар відсутній
IXTP36N30P littelfuse_discrete_mosfets_n-channel_standard_ixt_36n30p_datasheet.pdf.pdf
IXTP36N30P
Виробник: IXYS
Description: MOSFET N-CH 300V 36A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
на замовлення 771 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+309.55 грн
50+ 236.54 грн
100+ 202.74 грн
500+ 169.12 грн
IXTP90N15T littelfuse_discrete_mosfets_n-channel_trench_gate_ixtp90n15t_datasheet.pdf.pdf
IXTP90N15T
Виробник: IXYS
Description: MOSFET N-CH 150V 90A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 45A, 10V
Power Dissipation (Max): 455W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V
на замовлення 1608 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+308.15 грн
10+ 266.59 грн
100+ 218.43 грн
500+ 174.5 грн
1000+ 147.17 грн
IXTQ102N20T
IXTQ102N20T
Виробник: IXYS
Description: MOSFET N-CH 200V 102A TO3P
товар відсутній
IXTQ90N15T DS99857(IXTA-H-P-Q90N15T).pdf
IXTQ90N15T
Виробник: IXYS
Description: MOSFET N-CH 150V 90A TO-3P
товар відсутній
IXTV102N20T IXT(H,Q,V)102N20T.pdf
Виробник: IXYS
Description: MOSFET N-CH 200V 102A PLUS220
товар відсутній
IXTV110N25TS DS99904B(IXTH-V110N25T-S).pdf
IXTV110N25TS
Виробник: IXYS
Description: MOSFET N-CH 250V 110A PLUS220SMD
товар відсутній
IXTX17N120L DS99615B(IXTK-TX17N120L).pdf
IXTX17N120L
Виробник: IXYS
Description: MOSFET N-CH 1200V 17A PLUS247
товар відсутній
IXTY08N100P littelfuse_discrete_mosfets_n-channel_standard_ixt_08n100p_datasheet.pdf.pdf
IXTY08N100P
Виробник: IXYS
Description: MOSFET N-CH 1000V 800MA TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
на замовлення 1682 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+219.7 грн
70+ 167.54 грн
140+ 143.61 грн
560+ 119.8 грн
1050+ 102.58 грн
Мінімальне замовлення: 2
IXTY1N100P DS99234G(IXTA-TP-TY1N100P).pdf
IXTY1N100P
Виробник: IXYS
Description: MOSFET N-CH 1000V 1A TO-252
товар відсутній
IXTY1R4N100P littelfuse_discrete_mosfets_n-channel_standard_ixt_1r4n100p_datasheet.pdf.pdf
IXTY1R4N100P
Виробник: IXYS
Description: MOSFET N-CH 1000V 1.4A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
товар відсутній
IXTY2N100P littelfuse_discrete_mosfets_n-channel_standard_ixt_2n100p_datasheet.pdf.pdf
IXTY2N100P
Виробник: IXYS
Description: MOSFET N-CH 1000V 2A TO252
на замовлення 980 шт:
термін постачання 21-31 дні (днів)
IXUC160N075 98830.pdf
IXUC160N075
Виробник: IXYS
Description: MOSFET N-CH 75V 160A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2mA
Supplier Device Package: ISOPLUS220™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
товар відсутній
LKK47-06C5 littelfuse_discrete_mosfets_n-channel_super_junction_lkk47-06c5_datasheet.pdf.pdf
Виробник: IXYS
Description: MOSFET 2N-CH 600V 47A ISOPLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 47A
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
FET Feature: Super Junction
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: ISOPLUS264™
Part Status: Active
товар відсутній
MCD220-18io1 L083.pdf
Виробник: IXYS
Description: SCR MOD 1800V Y2-DCB
товар відсутній
MCO75-12io1 MCO75-12IO1.pdf
Виробник: IXYS
Description: MOD THYRISTOR SGL 1200V SOT-227B
товар відсутній
MCO75-16io1 MCO75-16IO1.pdf
Виробник: IXYS
Description: MOD THYRISTOR SGL 1600V SOT-227B
на замовлення 560 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1508.44 грн
10+ 1339.97 грн
100+ 1144.22 грн
500+ 999.69 грн
MDD200-22N1 MDD200-22N1.pdf
Виробник: IXYS
Description: DIODE MODULE GP 2200V 224A Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 224A
Supplier Device Package: Y4-M6
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 20 mA @ 2200 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+6256.29 грн
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