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DSEE29-12CC DSEE29-12CC IXYS media?resourcetype=datasheets&itemid=24507e8a-7c41-4bc2-92b1-51550d9eec5c&filename=Littelfuse-Power-Semiconductors-DSEE29-12CC-Datasheet Description: DIODE ARR GP 600V 30A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ISOPLUS220™
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.62 V @ 30 A
Current - Reverse Leakage @ Vr: 500 µA @ 600 V
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DSEP12-12B DSEP12-12B IXYS media?resourcetype=datasheets&itemid=c54a639a-8b83-405f-bf60-84abd19a0cc7&filename=Littelfuse-Power-Semiconductors-DSEP12-12B-Datasheet Description: DIODE GEN PURP 1.2KV 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.25 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
2+214.80 грн
50+111.20 грн
100+91.95 грн
Мінімальне замовлення: 2
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DSEP40-03AS-TRL DSEP40-03AS-TRL IXYS media?resourcetype=datasheets&itemid=d5c9c212-3e77-4435-b031-6ff61a740ca1&filename=Littelfuse-Power-Semiconductors-DSEP40-03AS-Datasheet Description: DIODE STANDARD 300V 40A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 150V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.44 V @ 40 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
на замовлення 3200 шт:
термін постачання 21-31 дні (днів)
800+153.54 грн
1600+146.23 грн
Мінімальне замовлення: 800
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DSEP6-06BS-TRL DSEP6-06BS-TRL IXYS DSEP6-06BS.pdf Description: DIODE GEN PURP 600V 6A TO252AA
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DSI30-08AC DSI30-08AC IXYS DSI30-12AC.pdf Description: DIODE GP 800V 30A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: ISOPLUS220™
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 45 A
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
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DSI30-12AC DSI30-12AC IXYS Description: DIODE STD 1200V 30A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: ISOPLUS220™
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 45 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
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DSS2X101-02A DSS2X101-02A IXYS DSS2x101-02A.pdf Description: DIODE MOD SCHOTT 200V SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 100 A
Current - Reverse Leakage @ Vr: 4 mA @ 200 V
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DSS40-0008D DSS40-0008D IXYS media?resourcetype=datasheets&itemid=1f6ff341-568e-45b4-8734-70f966bc2606&filename=Littelfuse-Power-Semiconductors-DSS40-0008D-Datasheet Description: DIODE SCHOTTKY 8V 40A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 8 V
Voltage - Forward (Vf) (Max) @ If: 340 mV @ 40 A
Current - Reverse Leakage @ Vr: 70 mA @ 8 V
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DSSK60-02A DSSK60-02A IXYS Description: DIODE ARR SCHOT 200V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 30 A
Current - Reverse Leakage @ Vr: 2 mA @ 200 V
на замовлення 817 шт:
термін постачання 21-31 дні (днів)
1+670.32 грн
30+356.71 грн
120+341.34 грн
510+289.24 грн
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DSSK60-02AR DSSK60-02AR IXYS Description: DIODE ARRAY SCHOTTKY 200V 30A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ISOPLUS247™
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 30 A
Current - Reverse Leakage @ Vr: 2 mA @ 200 V
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DSSK70-008AR DSSK70-008AR IXYS L643.pdf Description: DIODE ARRAY SCHOTTKY 80V 35A
на замовлення 1575 шт:
термін постачання 21-31 дні (днів)
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DSSK80-006BR DSSK80-006BR IXYS Description: DIODE ARR SCHOT 60V ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: ISOPLUS247™
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 40 A
Current - Reverse Leakage @ Vr: 20 mA @ 60 V
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DSSS30-01AR DSSS30-01AR IXYS DSSS30-01AR.pdf Description: DIODE ARRAY SCHOTTKY 100V 30A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ISOPLUS247™
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 30 A
Current - Reverse Leakage @ Vr: 2 mA @ 100 V
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GUO40-12NO1 GUO40-12NO1 IXYS media?resourcetype=datasheets&itemid=9ac3834c-69cf-4d48-b407-c9cf2df493f9&filename=Littelfuse-Power-Semiconductors-GUO40-12NO1-Datasheet Description: BRIDGE RECT 3P 1.2KV 40A GUFP
Packaging: Tube
Package / Case: 5-SIP
Mounting Type: Through Hole
Diode Type: Three Phase
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: GUFP
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
на замовлення 4913 шт:
термін постачання 21-31 дні (днів)
1+1205.24 грн
14+914.43 грн
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GUO40-16NO1 GUO40-16NO1 IXYS Littelfuse-Power-Semiconductors-GUO40-16NO1-Datasheet?assetguid=bbe86a4a-7368-46b4-9a14-832c507bc9ae Description: BRIDGE RECT 3P 1.6KV 40A GUFP
Packaging: Tube
Package / Case: 5-SIP
Mounting Type: Through Hole
Diode Type: Three Phase
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: GUFP
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
на замовлення 263 шт:
термін постачання 21-31 дні (днів)
1+1659.92 грн
14+1106.50 грн
112+933.57 грн
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IXDR502D1B IXYS DS99909.pdf Description: IC GATE LS DRVR SGL 2A 6-DFN
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IXDS502D1B IXYS DS99909.pdf Description: IC GATE LS DRVR SGL 2A 6-DFN
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IXFB30N120P IXFB30N120P IXYS DS99825BIXFB30N120P.pdf Description: MOSFET N-CH 1200V 30A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 500mA, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22500 pF @ 25 V
на замовлення 176 шт:
термін постачання 21-31 дні (днів)
1+3349.92 грн
25+2261.51 грн
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IXFB40N110P IXFB40N110P IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfb40n110p_datasheet.pdf.pdf Description: MOSFET N-CH 1100V 40A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 20A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS264™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1100 V
Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
на замовлення 240 шт:
термін постачання 21-31 дні (днів)
1+3824.66 грн
25+3086.42 грн
100+2880.66 грн
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IXFH12N120P IXFH12N120P IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh12n120p_datasheet.pdf.pdf Description: MOSFET N-CH 1200V 12A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 500mA, 10V
Power Dissipation (Max): 543W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
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IXFK20N120P IXFK20N120P IXYS littelfuse-discrete-mosfets-ixf-20n120p-datasheet?assetguid=e6809744-4588-43ea-a419-5e983248ea7f Description: MOSFET N-CH 1200V 20A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 570mOhm @ 10A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V
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IXFK30N110P IXFK30N110P IXYS DS99855-OBS(IXFK-FX30N110P)(OBSOLETE).pdf Description: MOSFET N-CH 1100V 30A TO-264
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IXFL30N120P IXFL30N120P IXYS media?resourcetype=datasheets&itemid=1513854F-D52F-4BAA-9694-8F8750789130&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFL30N120P-Datasheet.PDF Description: MOSFET N-CH 1200V 18A I5PAK
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 15A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: ISOPLUSi5-Pak™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
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IXFL32N120P IXFL32N120P IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfl32n120p_datasheet.pdf.pdf Description: MOSFET N-CH 1200V 24A I5PAK
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 16A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: ISOPLUSi5-Pak™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 25 V
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IXFL38N100P IXFL38N100P IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfl38n100p_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 29A I5PAK
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 19A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: ISOPLUSi5-Pak™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V
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IXFN20N120P IXFN20N120P IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn20n120p_datasheet.pdf.pdf Description: MOSFET N-CH 1200V 20A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 570mOhm @ 10A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V
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IXFN26N120P IXFN26N120P IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn26n120p_datasheet.pdf.pdf Description: MOSFET N-CH 1200V 23A SOT-227B
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IXFN30N110P IXFN30N110P IXYS Description: MOSFET N-CH 1100V 25A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 15A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1100 V
Gate Charge (Qg) (Max) @ Vgs: 235 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
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IXFN30N120P IXFN30N120P IXYS 171449030littelfusediscretemosfetsnchannelhiperfetsix.pdf Description: MOSFET N-CH 1200V 30A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
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IXFN32N120P IXFN32N120P IXYS DS99718HIXFN32N120P.pdf Description: MOSFET N-CH 1200V 32A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 500mA, 10V
Power Dissipation (Max): 1000W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 25 V
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IXFN36N110P IXFN36N110P IXYS DS99902-OBS(IXFN36N110P)(OBSOLETE).pdf Description: MOSFET N-CH 1100V 36A SOT-227B
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IXFN40N110P IXFN40N110P IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn40n110p_datasheet.pdf.pdf Description: MOSFET N-CH 1100V 34A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 20A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1100 V
Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
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IXFN44N100P IXFN44N100P IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn44n100p_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 37A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 22A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
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IXFR16N120P IXFR16N120P IXYS DS99897B(IXFR16N120P).pdf Description: MOSFET N-CH 1200V 9A ISOPLUS247
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IXFR20N100P IXFR20N100P IXYS DS99876A(IXFR20N100P).pdf Description: MOSFET N-CH 1000V 11A ISOPLUS247
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IXFR20N120P IXFR20N120P IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr20n120p_datasheet.pdf.pdf Description: MOSFET N-CH 1200V 13A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 630mOhm @ 10A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V
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IXFR26N120P IXFR26N120P IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr26n120p_datasheet.pdf.pdf Description: MOSFET N-CH 1200V 15A ISOPLUS247
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IXFR30N110P IXFR30N110P IXYS DS99898-OBS(IXFR30N110P)(OBSOLETE).pdf Description: MOSFET N-CH 1100V 16A ISOPLUS247
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IXFR32N100P IXFR32N100P IXYS DS99881A(IXFR32N100P).pdf Description: MOSFET N-CH 1000V 18A ISOPLUS247
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IXFT20N100P IXFT20N100P IXYS DS99843B(IXFH-T20N100P).pdf Description: MOSFET N-CH 1000V 20A TO-268
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IXFV12N120P IXFV12N120P IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh12n120p_datasheet.pdf.pdf Description: MOSFET N-CH 1200V 12A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 500mA, 10V
Power Dissipation (Max): 543W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
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IXFV12N120PS IXYS Description: MOSFET N-CH 1200V 12A PLUS220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 500mA, 10V
Power Dissipation (Max): 543W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS-220SMD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
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IXFV15N100P IXFV15N100P IXYS Description: MOSFET N-CH 1000V 15A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 760mOhm @ 500mA, 10V
Power Dissipation (Max): 543W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5140 pF @ 25 V
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IXFV15N100PS IXYS Description: MOSFET N-CH 1000V 15A PLUS220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 760mOhm @ 500mA, 10V
Power Dissipation (Max): 543W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS-220SMD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5140 pF @ 25 V
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IXFX26N120P IXFX26N120P IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_26n120p_datasheet.pdf.pdf Description: MOSFET N-CH 1200V 26A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 13A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 25 V
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IXFX30N110P IXFX30N110P IXYS DS99855-OBS(IXFK-FX30N110P)(OBSOLETE).pdf Description: MOSFET N-CH 1100V 30A PLUS247
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IXGH100N30C3 IXGH100N30C3 IXYS littelfuse-discrete-igbts-ixgh100n30c3-datasheet?assetguid=45cbccdd-3d3d-4fca-ac8d-6fcda7cd5cd0 Description: IGBT PT 300V 75A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 100A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/105ns
Switching Energy: 230µJ (on), 520µJ (off)
Test Condition: 200V, 50A, 2Ohm, 15V
Gate Charge: 162 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector Pulsed (Icm): 500 A
Power - Max: 460 W
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IXGH25N120 IXGH25N120 IXYS Description: IGBT 1200V 50A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/650ns
Switching Energy: 11mJ (off)
Test Condition: 960V, 25A, 33Ohm, 15V
Gate Charge: 130 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 200 W
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IXGH32N120A3 IXGH32N120A3 IXYS littelfuse_discrete_igbts_pt_ixg_32n120a3_datasheet.pdf.pdf Description: IGBT 1200V 75A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 32A
Supplier Device Package: TO-247AD
IGBT Type: PT
Gate Charge: 89 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 300 W
на замовлення 359 шт:
термін постачання 21-31 дні (днів)
1+838.32 грн
30+512.07 грн
120+455.39 грн
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IXGH42N30C3 IXGH42N30C3 IXYS littelfuse_discrete_igbts_pt_ixgh42n30c3_datasheet.pdf.pdf Description: IGBT 300V 223W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 42A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/113ns
Switching Energy: 120µJ (on), 150µJ (off)
Test Condition: 200V, 21A, 10Ohm, 15V
Gate Charge: 76 nC
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 223 W
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IXGH60N30C3 IXGH60N30C3 IXYS littelfuse-discrete-igbts-ixgh60n30c3-datasheet?assetguid=e186abec-b680-4701-88ff-8c227902a37e Description: IGBT 300V 75A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 60A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 23ns/108ns
Switching Energy: 150µJ (on), 300µJ (off)
Test Condition: 200V, 30A, 5Ohm, 15V
Gate Charge: 101 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector Pulsed (Icm): 420 A
Power - Max: 300 W
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IXGH85N30C3 IXGH85N30C3 IXYS littelfuse_discrete_igbts_pt_ixgh85n30c3_datasheet.pdf.pdf Description: IGBT 300V 75A 333W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 85A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/100ns
Switching Energy: 200µJ (on), 390µJ (off)
Test Condition: 200V, 42.5A, 3.3Ohm, 15V
Gate Charge: 136 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector Pulsed (Icm): 420 A
Power - Max: 333 W
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IXGK120N60B IXGK120N60B IXYS Littelfuse-Discrete-IGBTs-PT-IXG-120N60B-Datasheet.PDF?assetguid=A076EF5D-7F0A-4278-8A8D-49BFCE52E6BE Description: IGBT PT 600V 200A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 120A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 60ns/200ns
Switching Energy: 2.4mJ (on), 5.5mJ (off)
Test Condition: 480V, 100A, 2.4Ohm, 15V
Gate Charge: 350 nC
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 660 W
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IXGN200N60A2 IXGN200N60A2 IXYS Description: IGBT MOD 600V 200A 700W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 700 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 9.9 nF @ 25 V
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IXGN200N60B IXGN200N60B IXYS Description: IGBT MOD 600V 200A 600W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 120A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
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IXGR120N60B IXGR120N60B IXYS Description: IGBT PT 600V 156A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Td (on/off) @ 25°C: 60ns/200ns
Switching Energy: 2.4mJ (on), 5.5mJ (off)
Test Condition: 480V, 100A, 2.4Ohm, 15V
Gate Charge: 350 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 156 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 520 W
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IXKH20N60C5 IXKH20N60C5 IXYS media?resourcetype=datasheets&itemid=613BFB72-4577-444E-9104-484AB84819D7&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Super-Junction-IXK-20N60C5-Datasheet.PDF Description: MOSFET N-CH 600V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V
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IXKH24N60C5 IXKH24N60C5 IXYS media?resourcetype=datasheets&itemid=74BE5F44-7825-424C-AEE4-E985367308AB&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Super-Junction-IXK-24N60C5-Datasheet.PDF Description: MOSFET N-CH 600V 24A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 790µA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
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IXKH30N60C5 IXKH30N60C5 IXYS Description: MOSFET N-CH 600V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 10 V
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IXKP10N60C5 IXKP10N60C5 IXYS IXKP_10N60C5.pdf Description: MOSFET N-CH 600V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 340µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V
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DSEE29-12CC media?resourcetype=datasheets&itemid=24507e8a-7c41-4bc2-92b1-51550d9eec5c&filename=Littelfuse-Power-Semiconductors-DSEE29-12CC-Datasheet
DSEE29-12CC
Виробник: IXYS
Description: DIODE ARR GP 600V 30A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ISOPLUS220™
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.62 V @ 30 A
Current - Reverse Leakage @ Vr: 500 µA @ 600 V
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DSEP12-12B media?resourcetype=datasheets&itemid=c54a639a-8b83-405f-bf60-84abd19a0cc7&filename=Littelfuse-Power-Semiconductors-DSEP12-12B-Datasheet
DSEP12-12B
Виробник: IXYS
Description: DIODE GEN PURP 1.2KV 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.25 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+214.80 грн
50+111.20 грн
100+91.95 грн
Мінімальне замовлення: 2
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DSEP40-03AS-TRL media?resourcetype=datasheets&itemid=d5c9c212-3e77-4435-b031-6ff61a740ca1&filename=Littelfuse-Power-Semiconductors-DSEP40-03AS-Datasheet
DSEP40-03AS-TRL
Виробник: IXYS
Description: DIODE STANDARD 300V 40A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 150V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.44 V @ 40 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
на замовлення 3200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+153.54 грн
1600+146.23 грн
Мінімальне замовлення: 800
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DSEP6-06BS-TRL DSEP6-06BS.pdf
DSEP6-06BS-TRL
Виробник: IXYS
Description: DIODE GEN PURP 600V 6A TO252AA
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DSI30-08AC DSI30-12AC.pdf
DSI30-08AC
Виробник: IXYS
Description: DIODE GP 800V 30A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: ISOPLUS220™
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 45 A
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
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DSI30-12AC
DSI30-12AC
Виробник: IXYS
Description: DIODE STD 1200V 30A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: ISOPLUS220™
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 45 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
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DSS2X101-02A DSS2x101-02A.pdf
DSS2X101-02A
Виробник: IXYS
Description: DIODE MOD SCHOTT 200V SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 100 A
Current - Reverse Leakage @ Vr: 4 mA @ 200 V
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DSS40-0008D media?resourcetype=datasheets&itemid=1f6ff341-568e-45b4-8734-70f966bc2606&filename=Littelfuse-Power-Semiconductors-DSS40-0008D-Datasheet
DSS40-0008D
Виробник: IXYS
Description: DIODE SCHOTTKY 8V 40A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 8 V
Voltage - Forward (Vf) (Max) @ If: 340 mV @ 40 A
Current - Reverse Leakage @ Vr: 70 mA @ 8 V
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DSSK60-02A
DSSK60-02A
Виробник: IXYS
Description: DIODE ARR SCHOT 200V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 30 A
Current - Reverse Leakage @ Vr: 2 mA @ 200 V
на замовлення 817 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+670.32 грн
30+356.71 грн
120+341.34 грн
510+289.24 грн
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DSSK60-02AR
DSSK60-02AR
Виробник: IXYS
Description: DIODE ARRAY SCHOTTKY 200V 30A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ISOPLUS247™
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 30 A
Current - Reverse Leakage @ Vr: 2 mA @ 200 V
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DSSK70-008AR L643.pdf
DSSK70-008AR
Виробник: IXYS
Description: DIODE ARRAY SCHOTTKY 80V 35A
на замовлення 1575 шт:
термін постачання 21-31 дні (днів)
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DSSK80-006BR
DSSK80-006BR
Виробник: IXYS
Description: DIODE ARR SCHOT 60V ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: ISOPLUS247™
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 40 A
Current - Reverse Leakage @ Vr: 20 mA @ 60 V
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DSSS30-01AR DSSS30-01AR.pdf
DSSS30-01AR
Виробник: IXYS
Description: DIODE ARRAY SCHOTTKY 100V 30A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ISOPLUS247™
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 30 A
Current - Reverse Leakage @ Vr: 2 mA @ 100 V
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GUO40-12NO1 media?resourcetype=datasheets&itemid=9ac3834c-69cf-4d48-b407-c9cf2df493f9&filename=Littelfuse-Power-Semiconductors-GUO40-12NO1-Datasheet
GUO40-12NO1
Виробник: IXYS
Description: BRIDGE RECT 3P 1.2KV 40A GUFP
Packaging: Tube
Package / Case: 5-SIP
Mounting Type: Through Hole
Diode Type: Three Phase
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: GUFP
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
на замовлення 4913 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1205.24 грн
14+914.43 грн
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GUO40-16NO1 Littelfuse-Power-Semiconductors-GUO40-16NO1-Datasheet?assetguid=bbe86a4a-7368-46b4-9a14-832c507bc9ae
GUO40-16NO1
Виробник: IXYS
Description: BRIDGE RECT 3P 1.6KV 40A GUFP
Packaging: Tube
Package / Case: 5-SIP
Mounting Type: Through Hole
Diode Type: Three Phase
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: GUFP
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
на замовлення 263 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1659.92 грн
14+1106.50 грн
112+933.57 грн
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IXDR502D1B DS99909.pdf
Виробник: IXYS
Description: IC GATE LS DRVR SGL 2A 6-DFN
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IXDS502D1B DS99909.pdf
Виробник: IXYS
Description: IC GATE LS DRVR SGL 2A 6-DFN
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IXFB30N120P DS99825BIXFB30N120P.pdf
IXFB30N120P
Виробник: IXYS
Description: MOSFET N-CH 1200V 30A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 500mA, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22500 pF @ 25 V
на замовлення 176 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3349.92 грн
25+2261.51 грн
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IXFB40N110P littelfuse_discrete_mosfets_n-channel_hiperfets_ixfb40n110p_datasheet.pdf.pdf
IXFB40N110P
Виробник: IXYS
Description: MOSFET N-CH 1100V 40A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 20A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS264™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1100 V
Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
на замовлення 240 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3824.66 грн
25+3086.42 грн
100+2880.66 грн
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IXFH12N120P littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh12n120p_datasheet.pdf.pdf
IXFH12N120P
Виробник: IXYS
Description: MOSFET N-CH 1200V 12A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 500mA, 10V
Power Dissipation (Max): 543W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
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IXFK20N120P littelfuse-discrete-mosfets-ixf-20n120p-datasheet?assetguid=e6809744-4588-43ea-a419-5e983248ea7f
IXFK20N120P
Виробник: IXYS
Description: MOSFET N-CH 1200V 20A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 570mOhm @ 10A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V
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IXFK30N110P DS99855-OBS(IXFK-FX30N110P)(OBSOLETE).pdf
IXFK30N110P
Виробник: IXYS
Description: MOSFET N-CH 1100V 30A TO-264
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IXFL30N120P media?resourcetype=datasheets&itemid=1513854F-D52F-4BAA-9694-8F8750789130&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFL30N120P-Datasheet.PDF
IXFL30N120P
Виробник: IXYS
Description: MOSFET N-CH 1200V 18A I5PAK
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 15A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: ISOPLUSi5-Pak™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
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IXFL32N120P littelfuse_discrete_mosfets_n-channel_hiperfets_ixfl32n120p_datasheet.pdf.pdf
IXFL32N120P
Виробник: IXYS
Description: MOSFET N-CH 1200V 24A I5PAK
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 16A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: ISOPLUSi5-Pak™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 25 V
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IXFL38N100P littelfuse_discrete_mosfets_n-channel_hiperfets_ixfl38n100p_datasheet.pdf.pdf
IXFL38N100P
Виробник: IXYS
Description: MOSFET N-CH 1000V 29A I5PAK
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 19A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: ISOPLUSi5-Pak™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V
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IXFN20N120P littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn20n120p_datasheet.pdf.pdf
IXFN20N120P
Виробник: IXYS
Description: MOSFET N-CH 1200V 20A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 570mOhm @ 10A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V
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IXFN26N120P littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn26n120p_datasheet.pdf.pdf
IXFN26N120P
Виробник: IXYS
Description: MOSFET N-CH 1200V 23A SOT-227B
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IXFN30N110P
IXFN30N110P
Виробник: IXYS
Description: MOSFET N-CH 1100V 25A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 15A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1100 V
Gate Charge (Qg) (Max) @ Vgs: 235 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
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IXFN30N120P 171449030littelfusediscretemosfetsnchannelhiperfetsix.pdf
IXFN30N120P
Виробник: IXYS
Description: MOSFET N-CH 1200V 30A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
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IXFN32N120P DS99718HIXFN32N120P.pdf
IXFN32N120P
Виробник: IXYS
Description: MOSFET N-CH 1200V 32A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 500mA, 10V
Power Dissipation (Max): 1000W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 25 V
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IXFN36N110P DS99902-OBS(IXFN36N110P)(OBSOLETE).pdf
IXFN36N110P
Виробник: IXYS
Description: MOSFET N-CH 1100V 36A SOT-227B
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IXFN40N110P littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn40n110p_datasheet.pdf.pdf
IXFN40N110P
Виробник: IXYS
Description: MOSFET N-CH 1100V 34A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 20A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1100 V
Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
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IXFN44N100P littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn44n100p_datasheet.pdf.pdf
IXFN44N100P
Виробник: IXYS
Description: MOSFET N-CH 1000V 37A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 22A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
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IXFR16N120P DS99897B(IXFR16N120P).pdf
IXFR16N120P
Виробник: IXYS
Description: MOSFET N-CH 1200V 9A ISOPLUS247
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IXFR20N100P DS99876A(IXFR20N100P).pdf
IXFR20N100P
Виробник: IXYS
Description: MOSFET N-CH 1000V 11A ISOPLUS247
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IXFR20N120P littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr20n120p_datasheet.pdf.pdf
IXFR20N120P
Виробник: IXYS
Description: MOSFET N-CH 1200V 13A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 630mOhm @ 10A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V
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IXFR26N120P littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr26n120p_datasheet.pdf.pdf
IXFR26N120P
Виробник: IXYS
Description: MOSFET N-CH 1200V 15A ISOPLUS247
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IXFR30N110P DS99898-OBS(IXFR30N110P)(OBSOLETE).pdf
IXFR30N110P
Виробник: IXYS
Description: MOSFET N-CH 1100V 16A ISOPLUS247
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IXFR32N100P DS99881A(IXFR32N100P).pdf
IXFR32N100P
Виробник: IXYS
Description: MOSFET N-CH 1000V 18A ISOPLUS247
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IXFT20N100P DS99843B(IXFH-T20N100P).pdf
IXFT20N100P
Виробник: IXYS
Description: MOSFET N-CH 1000V 20A TO-268
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IXFV12N120P littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh12n120p_datasheet.pdf.pdf
IXFV12N120P
Виробник: IXYS
Description: MOSFET N-CH 1200V 12A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 500mA, 10V
Power Dissipation (Max): 543W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
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IXFV12N120PS
Виробник: IXYS
Description: MOSFET N-CH 1200V 12A PLUS220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 500mA, 10V
Power Dissipation (Max): 543W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS-220SMD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
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IXFV15N100P
IXFV15N100P
Виробник: IXYS
Description: MOSFET N-CH 1000V 15A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 760mOhm @ 500mA, 10V
Power Dissipation (Max): 543W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5140 pF @ 25 V
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IXFV15N100PS
Виробник: IXYS
Description: MOSFET N-CH 1000V 15A PLUS220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 760mOhm @ 500mA, 10V
Power Dissipation (Max): 543W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS-220SMD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5140 pF @ 25 V
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IXFX26N120P littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_26n120p_datasheet.pdf.pdf
IXFX26N120P
Виробник: IXYS
Description: MOSFET N-CH 1200V 26A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 13A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 25 V
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IXFX30N110P DS99855-OBS(IXFK-FX30N110P)(OBSOLETE).pdf
IXFX30N110P
Виробник: IXYS
Description: MOSFET N-CH 1100V 30A PLUS247
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IXGH100N30C3 littelfuse-discrete-igbts-ixgh100n30c3-datasheet?assetguid=45cbccdd-3d3d-4fca-ac8d-6fcda7cd5cd0
IXGH100N30C3
Виробник: IXYS
Description: IGBT PT 300V 75A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 100A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/105ns
Switching Energy: 230µJ (on), 520µJ (off)
Test Condition: 200V, 50A, 2Ohm, 15V
Gate Charge: 162 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector Pulsed (Icm): 500 A
Power - Max: 460 W
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IXGH25N120
IXGH25N120
Виробник: IXYS
Description: IGBT 1200V 50A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/650ns
Switching Energy: 11mJ (off)
Test Condition: 960V, 25A, 33Ohm, 15V
Gate Charge: 130 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 200 W
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IXGH32N120A3 littelfuse_discrete_igbts_pt_ixg_32n120a3_datasheet.pdf.pdf
IXGH32N120A3
Виробник: IXYS
Description: IGBT 1200V 75A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 32A
Supplier Device Package: TO-247AD
IGBT Type: PT
Gate Charge: 89 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 300 W
на замовлення 359 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+838.32 грн
30+512.07 грн
120+455.39 грн
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IXGH42N30C3 littelfuse_discrete_igbts_pt_ixgh42n30c3_datasheet.pdf.pdf
IXGH42N30C3
Виробник: IXYS
Description: IGBT 300V 223W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 42A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/113ns
Switching Energy: 120µJ (on), 150µJ (off)
Test Condition: 200V, 21A, 10Ohm, 15V
Gate Charge: 76 nC
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 223 W
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IXGH60N30C3 littelfuse-discrete-igbts-ixgh60n30c3-datasheet?assetguid=e186abec-b680-4701-88ff-8c227902a37e
IXGH60N30C3
Виробник: IXYS
Description: IGBT 300V 75A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 60A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 23ns/108ns
Switching Energy: 150µJ (on), 300µJ (off)
Test Condition: 200V, 30A, 5Ohm, 15V
Gate Charge: 101 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector Pulsed (Icm): 420 A
Power - Max: 300 W
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IXGH85N30C3 littelfuse_discrete_igbts_pt_ixgh85n30c3_datasheet.pdf.pdf
IXGH85N30C3
Виробник: IXYS
Description: IGBT 300V 75A 333W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 85A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/100ns
Switching Energy: 200µJ (on), 390µJ (off)
Test Condition: 200V, 42.5A, 3.3Ohm, 15V
Gate Charge: 136 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector Pulsed (Icm): 420 A
Power - Max: 333 W
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IXGK120N60B Littelfuse-Discrete-IGBTs-PT-IXG-120N60B-Datasheet.PDF?assetguid=A076EF5D-7F0A-4278-8A8D-49BFCE52E6BE
IXGK120N60B
Виробник: IXYS
Description: IGBT PT 600V 200A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 120A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 60ns/200ns
Switching Energy: 2.4mJ (on), 5.5mJ (off)
Test Condition: 480V, 100A, 2.4Ohm, 15V
Gate Charge: 350 nC
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 660 W
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IXGN200N60A2
IXGN200N60A2
Виробник: IXYS
Description: IGBT MOD 600V 200A 700W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 700 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 9.9 nF @ 25 V
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IXGN200N60B
IXGN200N60B
Виробник: IXYS
Description: IGBT MOD 600V 200A 600W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 120A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
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IXGR120N60B
IXGR120N60B
Виробник: IXYS
Description: IGBT PT 600V 156A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Td (on/off) @ 25°C: 60ns/200ns
Switching Energy: 2.4mJ (on), 5.5mJ (off)
Test Condition: 480V, 100A, 2.4Ohm, 15V
Gate Charge: 350 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 156 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 520 W
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IXKH20N60C5 media?resourcetype=datasheets&itemid=613BFB72-4577-444E-9104-484AB84819D7&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Super-Junction-IXK-20N60C5-Datasheet.PDF
IXKH20N60C5
Виробник: IXYS
Description: MOSFET N-CH 600V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V
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IXKH24N60C5 media?resourcetype=datasheets&itemid=74BE5F44-7825-424C-AEE4-E985367308AB&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Super-Junction-IXK-24N60C5-Datasheet.PDF
IXKH24N60C5
Виробник: IXYS
Description: MOSFET N-CH 600V 24A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 790µA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
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IXKH30N60C5
IXKH30N60C5
Виробник: IXYS
Description: MOSFET N-CH 600V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 10 V
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IXKP10N60C5 IXKP_10N60C5.pdf
IXKP10N60C5
Виробник: IXYS
Description: MOSFET N-CH 600V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 340µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
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