| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
| IXDR502D1B | IXYS |
 Description: IC GATE LS DRVR SGL 2A 6-DFN |
товару немає в наявності |
Мінімальне замовлення: 484 шт В кошику од. на суму грн. | |||||||
| IXDS502D1B | IXYS |
Description: IC GATE LS DRVR SGL 2A 6-DFN |
товару немає в наявності |
Мінімальне замовлення: 484 шт В кошику од. на суму грн. | |||||||
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IXFB30N120P | IXYS |
Description: MOSFET N-CH 1200V 30A PLUS264 Input Capacitance (Ciss) (Max) @ Vds: 22500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PLUS264™ Vgs(th) (Max) @ Id: 6.5V @ 1mA Power Dissipation (Max): 1250W (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Packaging: Tube |
на замовлення 176 шт: термін постачання 21-31 дні (днів) |
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IXFB40N110P | IXYS |
Description: MOSFET N-CH 1100V 40A PLUS264 Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V Drain to Source Voltage (Vdss): 1100 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PLUS264™ Vgs(th) (Max) @ Id: 6.5V @ 1mA Power Dissipation (Max): 1250W (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Packaging: Tube |
на замовлення 240 шт: термін постачання 21-31 дні (днів) |
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IXFH12N120P | IXYS |
Description: MOSFET N-CH 1200V 12A TO247AD Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V Drain to Source Voltage (Vdss): 1200 V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247AD (IXFH) Vgs(th) (Max) @ Id: 6.5V @ 1mA Power Dissipation (Max): 543W (Tc) Rds On (Max) @ Id, Vgs: 1.35Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Vgs (Max): ±30V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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IXFH20N100P | IXYS |
Description: MOSFET N-CH 1000V 20A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 570mOhm @ 10A, 10V Power Dissipation (Max): 660W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: TO-247AD (IXFH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V |
на замовлення 74 шт: термін постачання 21-31 дні (днів) |
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IXFK20N120P | IXYS |
Description: MOSFET N-CH 1200V 20A TO264AA Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-264AA (IXFK) Vgs(th) (Max) @ Id: 6.5V @ 1mA Power Dissipation (Max): 780W (Tc) Rds On (Max) @ Id, Vgs: 570mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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IXFK30N110P | IXYS |
Description: MOSFET N-CH 1100V 30A TO-264 |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | ||||||
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IXFL30N120P | IXYS |
Description: MOSFET N-CH 1200V 18A I5PAK Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: ISOPLUSi5-Pak™ Vgs(th) (Max) @ Id: 6.5V @ 1mA Power Dissipation (Max): 357W (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: ISOPLUSi5-Pak™ Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | ||||||
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IXFL32N120P | IXYS |
Description: MOSFET N-CH 1200V 24A I5PAK Packaging: Tube Package / Case: ISOPLUSi5-Pak™ Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 340mOhm @ 16A, 10V Power Dissipation (Max): 520W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: ISOPLUSi5-Pak™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||
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IXFL38N100P | IXYS |
Description: MOSFET N-CH 1000V 29A I5PAK Packaging: Tube Package / Case: ISOPLUSi5-Pak™ Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 19A, 10V Power Dissipation (Max): 520W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: ISOPLUSi5-Pak™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | ||||||
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IXFN20N120P | IXYS |
Description: MOSFET N-CH 1200V 20A SOT-227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 570mOhm @ 10A, 10V Power Dissipation (Max): 595W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||
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IXFN26N120P | IXYS |
Description: MOSFET N-CH 1200V 23A SOT-227B |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||
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IXFN30N110P | IXYS |
Description: MOSFET N-CH 1100V 25A SOT-227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 15A, 10V Power Dissipation (Max): 695W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: SOT-227B Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1100 V Gate Charge (Qg) (Max) @ Vgs: 235 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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IXFN30N120P | IXYS |
Description: MOSFET N-CH 1200V 30A SOT-227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 500mA, 10V Power Dissipation (Max): 890W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||
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IXFN32N120P | IXYS |
Description: MOSFET N-CH 1200V 32A SOT-227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 310mOhm @ 500mA, 10V Power Dissipation (Max): 1000W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 25 V |
на замовлення 34 шт: термін постачання 21-31 дні (днів) |
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IXFN36N110P | IXYS |
Description: MOSFET N-CH 1100V 36A SOT-227B |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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IXFN38N100P | IXYS |
Description: MOSFET N-CH 1000V 38A SOT-227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 19A, 10V Power Dissipation (Max): 1000W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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IXFN40N110P | IXYS |
Description: MOSFET N-CH 1100V 34A SOT-227B Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V Drain to Source Voltage (Vdss): 1100 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: SOT-227B Vgs(th) (Max) @ Id: 6.5V @ 1mA Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||
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IXFN44N100P | IXYS |
Description: MOSFET N-CH 1000V 37A SOT-227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 22A, 10V Power Dissipation (Max): 890W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
.jpg "IXFR16N120P") |
IXFR16N120P | IXYS |
Description: MOSFET N-CH 1200V 9A ISOPLUS247 |
товару немає в наявності |
Мінімальне замовлення: 30 шт В кошику од. на суму грн. | ||||||
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IXFR20N100P | IXYS |
Description: MOSFET N-CH 1000V 11A ISOPLUS247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 640mOhm @ 10A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: ISOPLUS247™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 30 шт В кошику од. на суму грн. | ||||||
.jpg "IXFR20N120P") |
IXFR20N120P | IXYS |
Description: MOSFET N-CH 1200V 13A ISOPLUS247 Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: ISOPLUS247™ Vgs(th) (Max) @ Id: 6.5V @ 1mA Power Dissipation (Max): 290W (Tc) Rds On (Max) @ Id, Vgs: 630mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||
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IXFR26N120P | IXYS |
Description: MOSFET N-CH 1200V 15A ISOPLUS247 |
товару немає в наявності |
Мінімальне замовлення: 30 шт В кошику од. на суму грн. | ||||||
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IXFR30N110P | IXYS |
Description: MOSFET N-CH 1100V 16A ISOPLUS247 |
товару немає в наявності |
Мінімальне замовлення: 30 шт В кошику од. на суму грн. | ||||||
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IXFR32N100P | IXYS |
Description: MOSFET N-CH 1000V 18A ISOPLUS247 |
товару немає в наявності |
Мінімальне замовлення: 30 шт В кошику од. на суму грн. | ||||||
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IXFT20N100P | IXYS |
Description: MOSFET N-CH 1000V 20A TO268 Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 570mOhm @ 10A, 10V Power Dissipation (Max): 660W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: TO-268AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||
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IXFV12N120P | IXYS |
Description: MOSFET N-CH 1200V 12A PLUS220 Rds On (Max) @ Id, Vgs: 1.35Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3, Short Tab Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PLUS220 Vgs(th) (Max) @ Id: 6.5V @ 1mA Power Dissipation (Max): 543W (Tc) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| IXFV12N120PS | IXYS |
Description: MOSFET N-CH 1200V 12A PLUS220SMD Packaging: Tube Package / Case: PLUS-220SMD Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 1.35Ohm @ 500mA, 10V Power Dissipation (Max): 543W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: PLUS-220SMD Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IXFV15N100P | IXYS |
Description: MOSFET N-CH 1000V 15A PLUS220 Packaging: Tube Package / Case: TO-220-3, Short Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 760mOhm @ 500mA, 10V Power Dissipation (Max): 543W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: PLUS220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5140 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IXFV15N100PS | IXYS |
Description: MOSFET N-CH 1000V 15A PLUS220SMD Packaging: Tube Package / Case: PLUS-220SMD Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 760mOhm @ 500mA, 10V Power Dissipation (Max): 543W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: PLUS-220SMD Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5140 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
.jpg "IXFX26N120P") |
IXFX26N120P | IXYS |
Description: MOSFET N-CH 1200V 26A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 13A, 10V Power Dissipation (Max): 960W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: PLUS247™-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||
.jpg "IXFX30N110P") |
IXFX30N110P | IXYS |
Description: MOSFET N-CH 1100V 30A PLUS247 |
товару немає в наявності |
Мінімальне замовлення: 30 шт В кошику од. на суму грн. | ||||||
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IXGH100N30C3 | IXYS |
Description: IGBT PT 300V 75A TO-247AD Power - Max: 460 W Current - Collector Pulsed (Icm): 500 A Voltage - Collector Emitter Breakdown (Max): 300 V Current - Collector (Ic) (Max): 75 A Gate Charge: 162 nC Test Condition: 200V, 50A, 2Ohm, 15V Switching Energy: 230µJ (on), 520µJ (off) Td (on/off) @ 25°C: 23ns/105ns IGBT Type: PT Supplier Device Package: TO-247AD Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 100A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 30 шт В кошику од. на суму грн. | ||||||
| IXGH25N120 | IXYS |
Description: IGBT 1200V 50A TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 100ns/650ns Switching Energy: 11mJ (off) Test Condition: 960V, 25A, 33Ohm, 15V Gate Charge: 130 nC Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 100 A Power - Max: 200 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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IXGH32N120A3 | IXYS |
Description: IGBT 1200V 75A 300W TO247 Power - Max: 300 W Current - Collector Pulsed (Icm): 230 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 75 A Part Status: Active Gate Charge: 89 nC IGBT Type: PT Supplier Device Package: TO-247AD Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 32A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 359 шт: термін постачання 21-31 дні (днів) |
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.jpg "IXGH42N30C3") |
IXGH42N30C3 | IXYS |
Description: IGBT 300V 223W TO247 Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 42A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Power - Max: 223 W Current - Collector Pulsed (Icm): 250 A Voltage - Collector Emitter Breakdown (Max): 300 V Part Status: Active Gate Charge: 76 nC Test Condition: 200V, 21A, 10Ohm, 15V Switching Energy: 120µJ (on), 150µJ (off) Td (on/off) @ 25°C: 21ns/113ns IGBT Type: PT Supplier Device Package: TO-247AD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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IXGH60N30C3 | IXYS |
Description: IGBT 300V 75A TO-247AD Power - Max: 300 W Current - Collector Pulsed (Icm): 420 A Voltage - Collector Emitter Breakdown (Max): 300 V Current - Collector (Ic) (Max): 75 A Part Status: Obsolete Gate Charge: 101 nC Test Condition: 200V, 30A, 5Ohm, 15V Switching Energy: 150µJ (on), 300µJ (off) Td (on/off) @ 25°C: 23ns/108ns Supplier Device Package: TO-247AD Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 60A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 30 шт В кошику од. на суму грн. | ||||||
.jpg "IXGH85N30C3") |
IXGH85N30C3 | IXYS |
Description: IGBT 300V 75A 333W TO247AD Gate Charge: 136 nC Power - Max: 333 W Current - Collector Pulsed (Icm): 420 A Voltage - Collector Emitter Breakdown (Max): 300 V Current - Collector (Ic) (Max): 75 A Test Condition: 200V, 42.5A, 3.3Ohm, 15V Switching Energy: 200µJ (on), 390µJ (off) Td (on/off) @ 25°C: 25ns/100ns IGBT Type: PT Supplier Device Package: TO-247AD Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 85A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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IXGK120N60B | IXYS |
Description: IGBT PT 600V 200A TO-264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 120A Supplier Device Package: TO-264 (IXGK) IGBT Type: PT Td (on/off) @ 25°C: 60ns/200ns Switching Energy: 2.4mJ (on), 5.5mJ (off) Test Condition: 480V, 100A, 2.4Ohm, 15V Gate Charge: 350 nC Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 300 A Power - Max: 660 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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IXGN200N60A2 | IXYS |
Description: IGBT MOD 600V 200A 700W SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 100A NTC Thermistor: No Supplier Device Package: SOT-227B IGBT Type: PT Part Status: Obsolete Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 700 W Current - Collector Cutoff (Max): 50 µA Input Capacitance (Cies) @ Vce: 9.9 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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IXGN200N60B | IXYS |
Description: IGBT MOD 600V 200A 600W SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 120A NTC Thermistor: No Supplier Device Package: SOT-227B IGBT Type: PT Part Status: Obsolete Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 600 W Current - Collector Cutoff (Max): 200 µA Input Capacitance (Cies) @ Vce: 11 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
 |
IXGR120N60B | IXYS |
Description: IGBT PT 600V 156A ISOPLUS247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A Supplier Device Package: ISOPLUS247™ IGBT Type: PT Td (on/off) @ 25°C: 60ns/200ns Switching Energy: 2.4mJ (on), 5.5mJ (off) Test Condition: 480V, 100A, 2.4Ohm, 15V Gate Charge: 350 nC Part Status: Obsolete Current - Collector (Ic) (Max): 156 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 300 A Power - Max: 520 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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IXKH20N60C5 | IXYS |
Description: MOSFET N-CH 600V 20A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3.5V @ 1.1mA Supplier Device Package: TO-247AD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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IXKH24N60C5 | IXYS |
Description: MOSFET N-CH 600V 24A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 3.5V @ 790µA Supplier Device Package: TO-247AD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 30 шт В кошику од. на суму грн. | ||||||
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IXKH30N60C5 | IXYS |
Description: MOSFET N-CH 600V 30A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 3.5V @ 1.1mA Supplier Device Package: TO-247AD Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 10 V |
товару немає в наявності |
Мінімальне замовлення: 30 шт В кошику од. на суму грн. | ||||||
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IXKP10N60C5 | IXYS |
Description: MOSFET N-CH 600V 10A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V Vgs(th) (Max) @ Id: 3.5V @ 340µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||
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IXKP10N60C5M | IXYS |
Description: MOSFET N-CH 600V 5.4A TO220ABFP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V Vgs(th) (Max) @ Id: 3.5V @ 340µA Supplier Device Package: TO-220ABFP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||
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IXKP13N60C5 | IXYS |
Description: MOSFET N-CH 600V 13A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 6.6A, 10V Vgs(th) (Max) @ Id: 3.5V @ 440µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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IXKP13N60C5M | IXYS |
Description: MOSFET N-CH 600V 6.5A TO220ABFP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 6.6A, 10V Vgs(th) (Max) @ Id: 3.5V @ 440µA Supplier Device Package: TO-220ABFP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||
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IXKP20N60C5 | IXYS |
Description: MOSFET N-CH 600V 20A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3.5V @ 1.1mA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||
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IXKP20N60C5M | IXYS |
Description: MOSFET N-CH 600V 7.6A TO220ABFP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3.5V @ 1.1mA Supplier Device Package: TO-220ABFP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| IXKP24N60C5 | IXYS |
Description: MOSFET N-CH 600V 24A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 3.5V @ 790µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | |||||||
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IXKP24N60C5M | IXYS |
Description: MOSFET N-CH 600V 8.5A TO220ABFP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3.5V @ 790µA Supplier Device Package: TO-220ABFP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| IXSH25N120A | IXYS |
Description: IGBT 1200V 50A TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 100ns/450ns Switching Energy: 9.6mJ (off) Test Condition: 960V, 25A, 18Ohm, 15V Gate Charge: 120 nC Part Status: Obsolete Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 80 A Power - Max: 200 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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IXSH30N60B | IXYS |
Description: IGBT PT 600V 55A TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 30ns/150ns Switching Energy: 1.5mJ (off) Test Condition: 480V, 30A, 4.7Ohm, 15V Gate Charge: 100 nC Current - Collector (Ic) (Max): 55 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 110 A Power - Max: 200 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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IXSH30N60C | IXYS |
Description: IGBT 600V 55A 200W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 30ns/90ns Switching Energy: 700µJ (off) Test Condition: 480V, 30A, 4.7Ohm, 15V Gate Charge: 100 nC Current - Collector (Ic) (Max): 55 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 110 A Power - Max: 200 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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IXSN52N60AU1 | IXYS |
Description: IGBT MOD 600V 80A 250W SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 40A NTC Thermistor: No Supplier Device Package: SOT-227B IGBT Type: PT Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 250 W Current - Collector Cutoff (Max): 750 µA Input Capacitance (Cies) @ Vce: 4.5 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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IXST30N60B | IXYS |
Description: IGBT PT 600V 55A TO-268AA Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Supplier Device Package: TO-268AA IGBT Type: PT Td (on/off) @ 25°C: 30ns/150ns Switching Energy: 1.5mJ (off) Test Condition: 480V, 30A, 4.7Ohm, 15V Gate Charge: 100 nC Current - Collector (Ic) (Max): 55 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 110 A Power - Max: 200 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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IXTA08N100P | IXYS |
Description: MOSFET N-CH 1000V 0.8A TO-263 |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. |
| IXDR502D1B |
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Виробник: IXYS
Description: IC GATE LS DRVR SGL 2A 6-DFN
Description: IC GATE LS DRVR SGL 2A 6-DFN
товару немає в наявності
Мінімальне замовлення: 484 шт
В кошику
од. на суму грн.
| IXDS502D1B |
|
Виробник: IXYS
Description: IC GATE LS DRVR SGL 2A 6-DFN
Description: IC GATE LS DRVR SGL 2A 6-DFN
товару немає в наявності
Мінімальне замовлення: 484 шт
В кошику
од. на суму грн.
| IXFB30N120P |
|
Виробник: IXYS
Description: MOSFET N-CH 1200V 30A PLUS264
Input Capacitance (Ciss) (Max) @ Vds: 22500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PLUS264™
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Power Dissipation (Max): 1250W (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Description: MOSFET N-CH 1200V 30A PLUS264
Input Capacitance (Ciss) (Max) @ Vds: 22500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PLUS264™
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Power Dissipation (Max): 1250W (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
на замовлення 176 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3105.83 грн |
| 25+ | 2096.72 грн |
| IXFB40N110P |
|
Виробник: IXYS
Description: MOSFET N-CH 1100V 40A PLUS264
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V
Drain to Source Voltage (Vdss): 1100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PLUS264™
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Power Dissipation (Max): 1250W (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Description: MOSFET N-CH 1100V 40A PLUS264
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V
Drain to Source Voltage (Vdss): 1100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PLUS264™
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Power Dissipation (Max): 1250W (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
на замовлення 240 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3545.98 грн |
| 25+ | 2861.53 грн |
| 100+ | 2670.76 грн |
| IXFH12N120P |
|
Виробник: IXYS
Description: MOSFET N-CH 1200V 12A TO247AD
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Power Dissipation (Max): 543W (Tc)
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Vgs (Max): ±30V
Description: MOSFET N-CH 1200V 12A TO247AD
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Power Dissipation (Max): 543W (Tc)
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Vgs (Max): ±30V
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| IXFH20N100P |
|
Виробник: IXYS
Description: MOSFET N-CH 1000V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 570mOhm @ 10A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V
Description: MOSFET N-CH 1000V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 570mOhm @ 10A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V
на замовлення 74 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 959.34 грн |
| 30+ | 564.78 грн |
| IXFK20N120P |
|
Виробник: IXYS
Description: MOSFET N-CH 1200V 20A TO264AA
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-264AA (IXFK)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Power Dissipation (Max): 780W (Tc)
Rds On (Max) @ Id, Vgs: 570mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Description: MOSFET N-CH 1200V 20A TO264AA
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-264AA (IXFK)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Power Dissipation (Max): 780W (Tc)
Rds On (Max) @ Id, Vgs: 570mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
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| IXFK30N110P |
|
Виробник: IXYS
Description: MOSFET N-CH 1100V 30A TO-264
Description: MOSFET N-CH 1100V 30A TO-264
товару немає в наявності
Мінімальне замовлення: 25 шт
В кошику
од. на суму грн.
| IXFL30N120P |
|
Виробник: IXYS
Description: MOSFET N-CH 1200V 18A I5PAK
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: ISOPLUSi5-Pak™
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Power Dissipation (Max): 357W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOPLUSi5-Pak™
Packaging: Tube
Description: MOSFET N-CH 1200V 18A I5PAK
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: ISOPLUSi5-Pak™
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Power Dissipation (Max): 357W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOPLUSi5-Pak™
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 25 шт
В кошику
од. на суму грн.
| IXFL32N120P |
|
Виробник: IXYS
Description: MOSFET N-CH 1200V 24A I5PAK
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 16A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: ISOPLUSi5-Pak™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 25 V
Description: MOSFET N-CH 1200V 24A I5PAK
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 16A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: ISOPLUSi5-Pak™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.
| IXFL38N100P |
|
Виробник: IXYS
Description: MOSFET N-CH 1000V 29A I5PAK
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 19A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: ISOPLUSi5-Pak™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V
Description: MOSFET N-CH 1000V 29A I5PAK
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 19A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: ISOPLUSi5-Pak™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 25 шт
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од. на суму грн.
| IXFN20N120P |
|
Виробник: IXYS
Description: MOSFET N-CH 1200V 20A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 570mOhm @ 10A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V
Description: MOSFET N-CH 1200V 20A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 570mOhm @ 10A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 300 шт
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од. на суму грн.
| IXFN26N120P |
|
Виробник: IXYS
Description: MOSFET N-CH 1200V 23A SOT-227B
Description: MOSFET N-CH 1200V 23A SOT-227B
товару немає в наявності
Мінімальне замовлення: 10 шт
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| IXFN30N110P |
Виробник: IXYS
Description: MOSFET N-CH 1100V 25A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 15A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1100 V
Gate Charge (Qg) (Max) @ Vgs: 235 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
Description: MOSFET N-CH 1100V 25A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 15A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1100 V
Gate Charge (Qg) (Max) @ Vgs: 235 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
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| IXFN30N120P |
|
Виробник: IXYS
Description: MOSFET N-CH 1200V 30A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
Description: MOSFET N-CH 1200V 30A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.
| IXFN32N120P |
|
Виробник: IXYS
Description: MOSFET N-CH 1200V 32A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 500mA, 10V
Power Dissipation (Max): 1000W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 25 V
Description: MOSFET N-CH 1200V 32A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 500mA, 10V
Power Dissipation (Max): 1000W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 25 V
на замовлення 34 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 5043.10 грн |
| 10+ | 3751.11 грн |
| IXFN36N110P |
|
Виробник: IXYS
Description: MOSFET N-CH 1100V 36A SOT-227B
Description: MOSFET N-CH 1100V 36A SOT-227B
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В кошику
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| IXFN38N100P |
|
Виробник: IXYS
Description: MOSFET N-CH 1000V 38A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 19A, 10V
Power Dissipation (Max): 1000W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V
Description: MOSFET N-CH 1000V 38A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 19A, 10V
Power Dissipation (Max): 1000W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3797.82 грн |
| 10+ | 2781.04 грн |
| 100+ | 2538.31 грн |
| IXFN40N110P |
|
Виробник: IXYS
Description: MOSFET N-CH 1100V 34A SOT-227B
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V
Drain to Source Voltage (Vdss): 1100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Power Dissipation (Max): 890W (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Description: MOSFET N-CH 1100V 34A SOT-227B
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V
Drain to Source Voltage (Vdss): 1100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Power Dissipation (Max): 890W (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.
| IXFN44N100P |
|
Виробник: IXYS
Description: MOSFET N-CH 1000V 37A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 22A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
Description: MOSFET N-CH 1000V 37A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 22A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
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| IXFR16N120P |
|
Виробник: IXYS
Description: MOSFET N-CH 1200V 9A ISOPLUS247
Description: MOSFET N-CH 1200V 9A ISOPLUS247
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Мінімальне замовлення: 30 шт
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| IXFR20N100P |
|
Виробник: IXYS
Description: MOSFET N-CH 1000V 11A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 640mOhm @ 10A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V
Description: MOSFET N-CH 1000V 11A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 640mOhm @ 10A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V
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Мінімальне замовлення: 30 шт
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| IXFR20N120P |
|
Виробник: IXYS
Description: MOSFET N-CH 1200V 13A ISOPLUS247
Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOPLUS247™
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Power Dissipation (Max): 290W (Tc)
Rds On (Max) @ Id, Vgs: 630mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CH 1200V 13A ISOPLUS247
Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOPLUS247™
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Power Dissipation (Max): 290W (Tc)
Rds On (Max) @ Id, Vgs: 630mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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Мінімальне замовлення: 300 шт
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| IXFR26N120P |
|
Виробник: IXYS
Description: MOSFET N-CH 1200V 15A ISOPLUS247
Description: MOSFET N-CH 1200V 15A ISOPLUS247
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Мінімальне замовлення: 30 шт
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| IXFR30N110P |
|
Виробник: IXYS
Description: MOSFET N-CH 1100V 16A ISOPLUS247
Description: MOSFET N-CH 1100V 16A ISOPLUS247
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Мінімальне замовлення: 30 шт
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| IXFR32N100P |
|
Виробник: IXYS
Description: MOSFET N-CH 1000V 18A ISOPLUS247
Description: MOSFET N-CH 1000V 18A ISOPLUS247
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Мінімальне замовлення: 30 шт
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| IXFT20N100P |
|
Виробник: IXYS
Description: MOSFET N-CH 1000V 20A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 570mOhm @ 10A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V
Description: MOSFET N-CH 1000V 20A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 570mOhm @ 10A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V
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Мінімальне замовлення: 300 шт
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| IXFV12N120P |
|
Виробник: IXYS
Description: MOSFET N-CH 1200V 12A PLUS220
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3, Short Tab
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PLUS220
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Power Dissipation (Max): 543W (Tc)
Description: MOSFET N-CH 1200V 12A PLUS220
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3, Short Tab
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PLUS220
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Power Dissipation (Max): 543W (Tc)
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| IXFV12N120PS |
Виробник: IXYS
Description: MOSFET N-CH 1200V 12A PLUS220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 500mA, 10V
Power Dissipation (Max): 543W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS-220SMD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
Description: MOSFET N-CH 1200V 12A PLUS220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 500mA, 10V
Power Dissipation (Max): 543W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS-220SMD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
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| IXFV15N100P |
Виробник: IXYS
Description: MOSFET N-CH 1000V 15A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 760mOhm @ 500mA, 10V
Power Dissipation (Max): 543W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5140 pF @ 25 V
Description: MOSFET N-CH 1000V 15A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 760mOhm @ 500mA, 10V
Power Dissipation (Max): 543W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5140 pF @ 25 V
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| IXFV15N100PS |
Виробник: IXYS
Description: MOSFET N-CH 1000V 15A PLUS220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 760mOhm @ 500mA, 10V
Power Dissipation (Max): 543W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS-220SMD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5140 pF @ 25 V
Description: MOSFET N-CH 1000V 15A PLUS220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 760mOhm @ 500mA, 10V
Power Dissipation (Max): 543W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS-220SMD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5140 pF @ 25 V
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| IXFX26N120P |
|
Виробник: IXYS
Description: MOSFET N-CH 1200V 26A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 13A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 25 V
Description: MOSFET N-CH 1200V 26A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 13A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 25 V
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Мінімальне замовлення: 300 шт
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| IXFX30N110P |
|
Виробник: IXYS
Description: MOSFET N-CH 1100V 30A PLUS247
Description: MOSFET N-CH 1100V 30A PLUS247
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Мінімальне замовлення: 30 шт
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| IXGH100N30C3 |
|
Виробник: IXYS
Description: IGBT PT 300V 75A TO-247AD
Power - Max: 460 W
Current - Collector Pulsed (Icm): 500 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 75 A
Gate Charge: 162 nC
Test Condition: 200V, 50A, 2Ohm, 15V
Switching Energy: 230µJ (on), 520µJ (off)
Td (on/off) @ 25°C: 23ns/105ns
IGBT Type: PT
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 100A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT PT 300V 75A TO-247AD
Power - Max: 460 W
Current - Collector Pulsed (Icm): 500 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 75 A
Gate Charge: 162 nC
Test Condition: 200V, 50A, 2Ohm, 15V
Switching Energy: 230µJ (on), 520µJ (off)
Td (on/off) @ 25°C: 23ns/105ns
IGBT Type: PT
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 100A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 30 шт
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од. на суму грн.
| IXGH25N120 |
Виробник: IXYS
Description: IGBT 1200V 50A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/650ns
Switching Energy: 11mJ (off)
Test Condition: 960V, 25A, 33Ohm, 15V
Gate Charge: 130 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 200 W
Description: IGBT 1200V 50A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/650ns
Switching Energy: 11mJ (off)
Test Condition: 960V, 25A, 33Ohm, 15V
Gate Charge: 130 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 200 W
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| IXGH32N120A3 |
|
Виробник: IXYS
Description: IGBT 1200V 75A 300W TO247
Power - Max: 300 W
Current - Collector Pulsed (Icm): 230 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
Part Status: Active
Gate Charge: 89 nC
IGBT Type: PT
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 32A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT 1200V 75A 300W TO247
Power - Max: 300 W
Current - Collector Pulsed (Icm): 230 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
Part Status: Active
Gate Charge: 89 nC
IGBT Type: PT
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 32A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 359 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 777.23 грн |
| 30+ | 474.76 грн |
| 120+ | 422.20 грн |
| IXGH42N30C3 |
|
Виробник: IXYS
Description: IGBT 300V 223W TO247
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 42A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 223 W
Current - Collector Pulsed (Icm): 250 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Part Status: Active
Gate Charge: 76 nC
Test Condition: 200V, 21A, 10Ohm, 15V
Switching Energy: 120µJ (on), 150µJ (off)
Td (on/off) @ 25°C: 21ns/113ns
IGBT Type: PT
Supplier Device Package: TO-247AD
Description: IGBT 300V 223W TO247
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 42A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 223 W
Current - Collector Pulsed (Icm): 250 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Part Status: Active
Gate Charge: 76 nC
Test Condition: 200V, 21A, 10Ohm, 15V
Switching Energy: 120µJ (on), 150µJ (off)
Td (on/off) @ 25°C: 21ns/113ns
IGBT Type: PT
Supplier Device Package: TO-247AD
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| IXGH60N30C3 |
|
Виробник: IXYS
Description: IGBT 300V 75A TO-247AD
Power - Max: 300 W
Current - Collector Pulsed (Icm): 420 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 75 A
Part Status: Obsolete
Gate Charge: 101 nC
Test Condition: 200V, 30A, 5Ohm, 15V
Switching Energy: 150µJ (on), 300µJ (off)
Td (on/off) @ 25°C: 23ns/108ns
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 60A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT 300V 75A TO-247AD
Power - Max: 300 W
Current - Collector Pulsed (Icm): 420 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 75 A
Part Status: Obsolete
Gate Charge: 101 nC
Test Condition: 200V, 30A, 5Ohm, 15V
Switching Energy: 150µJ (on), 300µJ (off)
Td (on/off) @ 25°C: 23ns/108ns
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 60A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 30 шт
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| IXGH85N30C3 |
|
Виробник: IXYS
Description: IGBT 300V 75A 333W TO247AD
Gate Charge: 136 nC
Power - Max: 333 W
Current - Collector Pulsed (Icm): 420 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 75 A
Test Condition: 200V, 42.5A, 3.3Ohm, 15V
Switching Energy: 200µJ (on), 390µJ (off)
Td (on/off) @ 25°C: 25ns/100ns
IGBT Type: PT
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 85A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT 300V 75A 333W TO247AD
Gate Charge: 136 nC
Power - Max: 333 W
Current - Collector Pulsed (Icm): 420 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 75 A
Test Condition: 200V, 42.5A, 3.3Ohm, 15V
Switching Energy: 200µJ (on), 390µJ (off)
Td (on/off) @ 25°C: 25ns/100ns
IGBT Type: PT
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 85A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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| IXGK120N60B |
|
Виробник: IXYS
Description: IGBT PT 600V 200A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 120A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 60ns/200ns
Switching Energy: 2.4mJ (on), 5.5mJ (off)
Test Condition: 480V, 100A, 2.4Ohm, 15V
Gate Charge: 350 nC
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 660 W
Description: IGBT PT 600V 200A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 120A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 60ns/200ns
Switching Energy: 2.4mJ (on), 5.5mJ (off)
Test Condition: 480V, 100A, 2.4Ohm, 15V
Gate Charge: 350 nC
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 660 W
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| IXGN200N60A2 |
Виробник: IXYS
Description: IGBT MOD 600V 200A 700W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 700 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 9.9 nF @ 25 V
Description: IGBT MOD 600V 200A 700W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 700 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 9.9 nF @ 25 V
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| IXGN200N60B |
Виробник: IXYS
Description: IGBT MOD 600V 200A 600W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 120A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
Description: IGBT MOD 600V 200A 600W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 120A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
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| IXGR120N60B |
|
Виробник: IXYS
Description: IGBT PT 600V 156A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Td (on/off) @ 25°C: 60ns/200ns
Switching Energy: 2.4mJ (on), 5.5mJ (off)
Test Condition: 480V, 100A, 2.4Ohm, 15V
Gate Charge: 350 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 156 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 520 W
Description: IGBT PT 600V 156A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Td (on/off) @ 25°C: 60ns/200ns
Switching Energy: 2.4mJ (on), 5.5mJ (off)
Test Condition: 480V, 100A, 2.4Ohm, 15V
Gate Charge: 350 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 156 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 520 W
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| IXKH20N60C5 |
|
Виробник: IXYS
Description: MOSFET N-CH 600V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V
Description: MOSFET N-CH 600V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V
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| IXKH24N60C5 |
|
Виробник: IXYS
Description: MOSFET N-CH 600V 24A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 790µA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
Description: MOSFET N-CH 600V 24A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 790µA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
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| IXKH30N60C5 |
Виробник: IXYS
Description: MOSFET N-CH 600V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 10 V
Description: MOSFET N-CH 600V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 10 V
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| IXKP10N60C5 |
|
Виробник: IXYS
Description: MOSFET N-CH 600V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 340µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V
Description: MOSFET N-CH 600V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 340µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V
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| IXKP10N60C5M |
|
Виробник: IXYS
Description: MOSFET N-CH 600V 5.4A TO220ABFP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 340µA
Supplier Device Package: TO-220ABFP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V
Description: MOSFET N-CH 600V 5.4A TO220ABFP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 340µA
Supplier Device Package: TO-220ABFP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V
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| IXKP13N60C5 |
|
Виробник: IXYS
Description: MOSFET N-CH 600V 13A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Description: MOSFET N-CH 600V 13A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
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| IXKP13N60C5M |
|
Виробник: IXYS
Description: MOSFET N-CH 600V 6.5A TO220ABFP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: TO-220ABFP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Description: MOSFET N-CH 600V 6.5A TO220ABFP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: TO-220ABFP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
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| IXKP20N60C5 |
|
Виробник: IXYS
Description: MOSFET N-CH 600V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V
Description: MOSFET N-CH 600V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V
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| IXKP20N60C5M |
|
Виробник: IXYS
Description: MOSFET N-CH 600V 7.6A TO220ABFP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
Supplier Device Package: TO-220ABFP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V
Description: MOSFET N-CH 600V 7.6A TO220ABFP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
Supplier Device Package: TO-220ABFP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V
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| IXKP24N60C5 |
Виробник: IXYS
Description: MOSFET N-CH 600V 24A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 790µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
Description: MOSFET N-CH 600V 24A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 790µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
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| IXKP24N60C5M |
|
Виробник: IXYS
Description: MOSFET N-CH 600V 8.5A TO220ABFP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 790µA
Supplier Device Package: TO-220ABFP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
Description: MOSFET N-CH 600V 8.5A TO220ABFP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 790µA
Supplier Device Package: TO-220ABFP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
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| IXSH25N120A |
Виробник: IXYS
Description: IGBT 1200V 50A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/450ns
Switching Energy: 9.6mJ (off)
Test Condition: 960V, 25A, 18Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 200 W
Description: IGBT 1200V 50A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/450ns
Switching Energy: 9.6mJ (off)
Test Condition: 960V, 25A, 18Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 200 W
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| IXSH30N60B |
Виробник: IXYS
Description: IGBT PT 600V 55A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/150ns
Switching Energy: 1.5mJ (off)
Test Condition: 480V, 30A, 4.7Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 200 W
Description: IGBT PT 600V 55A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/150ns
Switching Energy: 1.5mJ (off)
Test Condition: 480V, 30A, 4.7Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 200 W
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| IXSH30N60C |
|
Виробник: IXYS
Description: IGBT 600V 55A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/90ns
Switching Energy: 700µJ (off)
Test Condition: 480V, 30A, 4.7Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 200 W
Description: IGBT 600V 55A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/90ns
Switching Energy: 700µJ (off)
Test Condition: 480V, 30A, 4.7Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 200 W
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| IXSN52N60AU1 |
Виробник: IXYS
Description: IGBT MOD 600V 80A 250W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 40A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 750 µA
Input Capacitance (Cies) @ Vce: 4.5 nF @ 25 V
Description: IGBT MOD 600V 80A 250W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 40A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 750 µA
Input Capacitance (Cies) @ Vce: 4.5 nF @ 25 V
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| IXST30N60B |
Виробник: IXYS
Description: IGBT PT 600V 55A TO-268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-268AA
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/150ns
Switching Energy: 1.5mJ (off)
Test Condition: 480V, 30A, 4.7Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 200 W
Description: IGBT PT 600V 55A TO-268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-268AA
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/150ns
Switching Energy: 1.5mJ (off)
Test Condition: 480V, 30A, 4.7Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 200 W
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| IXTA08N100P |
|
Виробник: IXYS
Description: MOSFET N-CH 1000V 0.8A TO-263
Description: MOSFET N-CH 1000V 0.8A TO-263
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Мінімальне замовлення: 50 шт
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од. на суму грн.