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IXTT48P20P IXTT48P20P IXYS DS99981(IXTH-T48P20P).pdf Description: MOSFET P-CH 200V 48A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 500mA, 10V
Power Dissipation (Max): 462W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
товар відсутній
IXTT90P10P IXTT90P10P IXYS littelfuse_discrete_mosfets_p-channel_ixt_90p10p_datasheet.pdf.pdf Description: MOSFET P-CH 100V 90A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 45A, 10V
Power Dissipation (Max): 462W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
товар відсутній
IXTU12N06T IXTU12N06T IXYS 99947.pdf Description: MOSFET N-CH 60V 12A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 6A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-251AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
товар відсутній
IXTX170P10P IXTX170P10P IXYS littelfuse_discrete_mosfets_p-channel_ixt_170p10p_datasheet.pdf.pdf Description: MOSFET P-CH 100V 170A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
на замовлення 89 шт:
термін постачання 21-31 дні (днів)
1+1339.34 грн
30+ 1069.26 грн
IXTX32P60P IXTX32P60P IXYS DS99990(IXTK-TX32P60P).pdf Description: MOSFET P-CH 600V 32A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 16A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V
на замовлення 664 шт:
термін постачання 21-31 дні (днів)
1+1339.34 грн
30+ 1069.26 грн
120+ 1002.42 грн
510+ 802.76 грн
IXTX40P50P IXTX40P50P IXYS littelfuse_discrete_mosfets_p-channel_ixt_40p50p_datasheet.pdf.pdf Description: MOSFET P-CH 500V 40A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 20A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 25 V
на замовлення 1277 шт:
термін постачання 21-31 дні (днів)
1+1339.34 грн
30+ 1069.26 грн
120+ 1002.42 грн
510+ 802.76 грн
IXTX90P20P IXTX90P20P IXYS littelfuse_discrete_mosfets_p-channel_ixt_90p20p_datasheet.pdf.pdf Description: MOSFET P-CH 200V 90A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 22A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
товар відсутній
IXTY12N06T IXTY12N06T IXYS 99947.pdf Description: MOSFET N-CH 60V 12A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 6A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
товар відсутній
IXFH10N100P IXFH10N100P IXYS DS99922(IXFH-FV10N100P_S).pdf Description: MOSFET N-CH 1000V 10A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 5A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3030 pF @ 25 V
товар відсутній
IXGA20N120A3 IXGA20N120A3 IXYS littelfuse_discrete_igbts_pt_ixg_20n120a3_datasheet.pdf.pdf Description: IGBT PT 1200V 40A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/290ns
Switching Energy: 2.85mJ (on), 6.47mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 50 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 180 W
товар відсутній
IXGH20N120A3 IXGH20N120A3 IXYS littelfuse_discrete_igbts_pt_ixg_20n120a3_datasheet.pdf.pdf Description: IGBT 1200V 40A 180W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/290ns
Switching Energy: 2.85mJ (on), 6.47mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 50 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 180 W
на замовлення 780 шт:
термін постачання 21-31 дні (днів)
1+501.19 грн
30+ 385.26 грн
120+ 344.71 грн
510+ 285.43 грн
IXGP20N120A3 IXGP20N120A3 IXYS littelfuse_discrete_igbts_pt_ixg_20n120a3_datasheet.pdf.pdf Description: IGBT 1200V 40A 180W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/290ns
Switching Energy: 2.85mJ (on), 6.47mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 50 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 180 W
на замовлення 36 шт:
термін постачання 21-31 дні (днів)
1+432.94 грн
IXGA24N120C3 IXGA24N120C3 IXYS littelfuse_discrete_igbts_pt_ixg_24n120c3_datasheet.pdf.pdf Description: IGBT 1200V 48A 250W TO263
товар відсутній
IXGH24N120C3 IXGH24N120C3 IXYS littelfuse_discrete_igbts_pt_ixg_24n120c3_datasheet.pdf.pdf Description: IGBT 1200V 48A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/93ns
Switching Energy: 1.16mJ (on), 470µJ (off)
Test Condition: 600V, 20A, 5Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 250 W
на замовлення 1178 шт:
термін постачання 21-31 дні (днів)
1+556.64 грн
30+ 427.88 грн
120+ 382.84 грн
510+ 317.01 грн
1020+ 285.31 грн
IXGH24N120C3H1 IXGH24N120C3H1 IXYS littelfuse_discrete_igbts_pt_ixgh24n120c3h1_datasheet.pdf.pdf Description: IGBT 1200V 48A 250W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/93ns
Switching Energy: 1.16mJ (on), 470µJ (off)
Test Condition: 600V, 20A, 5Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 250 W
товар відсутній
IXGP24N120C3 IXGP24N120C3 IXYS littelfuse_discrete_igbts_pt_ixg_24n120c3_datasheet.pdf.pdf Description: IGBT 1200V 48A 250W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/93ns
Switching Energy: 1.16mJ (on), 470µJ (off)
Test Condition: 600V, 20A, 5Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 250 W
товар відсутній
IXGR24N120C3D1 IXGR24N120C3D1 IXYS littelfuse_discrete_igbts_pt_ixgr24n120c3d1_datasheet.pdf.pdf Description: IGBT 1200V 48A 200W ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 220 ns
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/93ns
Switching Energy: 1.37mJ (on), 470µJ (off)
Test Condition: 600V, 20A, 5Ohm, 15V
Gate Charge: 79 nC
Part Status: Active
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 200 W
товар відсутній
IXGH30N120C3H1 IXGH30N120C3H1 IXYS littelfuse_discrete_igbts_pt_ixgh30n120c3h1_datasheet.pdf.pdf Description: IGBT 1200V 48A 250W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/106ns
Switching Energy: 1.45mJ (on), 470µJ (off)
Test Condition: 600V, 24A, 5Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 115 A
Power - Max: 250 W
товар відсутній
IXGA30N120B3 IXGA30N120B3 IXYS littelfuse_discrete_igbts_pt_ixg_30n120b3_datasheet.pdf.pdf Description: IGBT 1200V 60A 300W TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/127ns
Switching Energy: 3.47mJ (on), 2.16mJ (off)
Test Condition: 960V, 30A, 5Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 300 W
на замовлення 260 шт:
термін постачання 21-31 дні (днів)
1+516.83 грн
50+ 397.35 грн
100+ 355.53 грн
IXGP30N120B3 IXGP30N120B3 IXYS littelfuse_discrete_igbts_pt_ixg_30n120b3_datasheet.pdf.pdf Description: IGBT PT 1200V 60A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/127ns
Switching Energy: 3.47mJ (on), 2.16mJ (off)
Test Condition: 960V, 30A, 5Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 300 W
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
1+505.45 грн
IXGT32N120A3 IXGT32N120A3 IXYS littelfuse_discrete_igbts_pt_ixg_32n120a3_datasheet.pdf.pdf Description: IGBT PT 1200V 75A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 32A
Supplier Device Package: TO-268AA
IGBT Type: PT
Gate Charge: 89 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 300 W
товар відсутній
IXGH40N120C3 IXGH40N120C3 IXYS littelfuse_discrete_igbts_pt_ixgh40n120c3_datasheet.pdf.pdf Description: IGBT 1200V 75A 380W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.4V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 17ns/130ns
Switching Energy: 1.8mJ (on), 550µJ (off)
Test Condition: 600V, 30A, 3Ohm, 15V
Gate Charge: 142 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 380 W
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
300+560.47 грн
Мінімальне замовлення: 300
IXGH40N120C3D1 IXGH40N120C3D1 IXYS littelfuse_discrete_igbts_pt_ixgh40n120c3d1_datasheet.pdf.pdf Description: IGBT 1200V 75A 380W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 4.4V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 17ns/130ns
Switching Energy: 1.8mJ (on), 550µJ (off)
Test Condition: 600V, 30A, 3Ohm, 15V
Gate Charge: 142 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 380 W
на замовлення 289 шт:
термін постачання 21-31 дні (днів)
1+918.49 грн
30+ 715.68 грн
120+ 673.59 грн
IXGH50N120C3 IXGH50N120C3 IXYS littelfuse_discrete_igbts_pt_ixgh50n120c3_datasheet.pdf.pdf Description: IGBT 1200V 75A 460W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 40A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/123ns
Switching Energy: 2.2mJ (on), 630µJ (off)
Test Condition: 600V, 40A, 2Ohm, 15V
Gate Charge: 196 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 460 W
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
1+1102.61 грн
10+ 935.4 грн
IXGK120N120A3 IXGK120N120A3 IXYS littelfuse_discrete_igbts_pt_ixg_120n120a3_datasheet.pdf.pdf Description: IGBT PT 1200V 240A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/490ns
Switching Energy: 10mJ (on), 33mJ (off)
Test Condition: 960V, 100A, 1Ohm, 15V
Gate Charge: 420 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 830 W
на замовлення 53 шт:
термін постачання 21-31 дні (днів)
1+2469.68 грн
25+ 1971.55 грн
IXGX120N120A3 IXGX120N120A3 IXYS littelfuse_discrete_igbts_pt_ixg_120n120a3_datasheet.pdf.pdf Description: IGBT 1200V 240A 830W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/490ns
Switching Energy: 10mJ (on), 33mJ (off)
Test Condition: 960V, 100A, 1Ohm, 15V
Gate Charge: 420 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 830 W
товар відсутній
DPG30I300HA DPG30I300HA IXYS DPG30I300HA.pdf Description: DIODE GEN PURP 300V 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
товар відсутній
IXTK140N30P IXTK140N30P IXYS a Description: MOSFET N-CH 300V 140A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 70A, 10V
Vgs(th) (Max) @ Id: 5V @ 500µA
Supplier Device Package: TO-264 (IXTK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14800 pF @ 25 V
на замовлення 17 шт:
термін постачання 21-31 дні (днів)
1+1477.26 грн
10+ 1263.52 грн
CS19-08ho1S-TUBE CS19-08ho1S-TUBE IXYS CS19-08ho1.pdf Description: THYRISTOR PHASE 19A 800V TO-263
товар відсутній
CS19-12ho1S-TUBE CS19-12ho1S-TUBE IXYS CS19-08ho1.pdf Description: THYRISTOR PHASE 19A 1200V TO-263
товар відсутній
CS20-25mo1F IXYS Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCS20-25mo1F.pdf Description: SCR 2.5KV I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
SCR Type: Standard Recovery
Supplier Device Package: ISOPLUS i4-PAC™
Voltage - Off State: 2.5 kV
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
1+2956.65 грн
10+ 2536.96 грн
100+ 2226.82 грн
DFE10I600PM DFE10I600PM IXYS DFE10I600PM.pdf Description: DIODE GP 600V 10A TO220ACFP
на замовлення 3820 шт:
термін постачання 21-31 дні (днів)
2+144.31 грн
10+ 124.93 грн
100+ 100.41 грн
500+ 77.42 грн
1000+ 64.43 грн
Мінімальне замовлення: 2
DGS10-018AS-TUBE DGS10-018AS-TUBE IXYS DGS10-018A,AS,%20DGSK20-018A.pdf Description: DIODE SCHOTTKY 180V 15A TO263AB
товар відсутній
DGS20-018AS-TUBE DGS20-018AS-TUBE IXYS DGS,DGSK%2020,40-018A,%20AS.pdf Description: DIODE SCHOTTKY 180V 23A TO263AB
товар відсутній
DGSK20-025AS-TUBE DGSK20-025AS-TUBE IXYS DGS,DGSK%209,%2010,%2020-025A,AS.pdf Description: DIODE ARRAY SCHOTTKY 250V TO263
товар відсутній
DHF30IM600PN IXYS DHF30IM600PN.pdf Description: DIODE GP 600V 15A TO220ABFP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220ABFP
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.37 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товар відсутній
DHF30IM600QB DHF30IM600QB IXYS DHF30IM600QB.pdf Description: DIODE GEN PURP 600V 30A TO3P
товар відсутній
DHG100X1200NA DHG100X1200NA IXYS DHG100X1200NA.pdf Description: DIODE MODULE 1.2KV 50A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.16 V @ 50 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
товар відсутній
DHG100X600NA IXYS Description: DIODE MODULE 600V 100A SOT227B
товар відсутній
DHG50X1200NA DHG50X1200NA IXYS DHG50X1200NA.pdf Description: DIODE MODULE 1.2KV 25A SOT227B
товар відсутній
DHG50X600NA DHG50X600NA IXYS Description: DIODE MODULE GP 600V 50A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: SOT-227B
Voltage - DC Reverse (Vr) (Max): 600 V
товар відсутній
DHG60I1200HA DHG60I1200HA IXYS DHG60I1200HA.pdf Description: DIODE GEN PURP 1.2KV 60A TO247AD
на замовлення 2280 шт:
термін постачання 21-31 дні (днів)
30+560.45 грн
Мінімальне замовлення: 30
DHG60I600HA DHG60I600HA IXYS Description: DIODE GEN PURP 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
на замовлення 150 шт:
термін постачання 21-31 дні (днів)
30+1165.08 грн
Мінімальне замовлення: 30
DLA20IM800PC-TRL DLA20IM800PC-TRL IXYS DLA20IM800PC.pdf Description: DIODE GEN PURP 800V 20A TO263
товар відсутній
DPF120X400NA IXYS Description: DIODE MODULE 400V 120A SOT227B
товар відсутній
DPF240X200NA DPF240X200NA IXYS DPF240X200NA.pdf Description: DIODE ARRAY 200V 120A SOT227B
товар відсутній
DPF400C400NB IXYS Description: DIODE MODULE 400V 400A SOT227B
товар відсутній
DPF60C200HB DPF60C200HB IXYS Description: DIODE ARRAY GP 200V 60A TO247AD
на замовлення 4350 шт:
термін постачання 21-31 дні (днів)
1+452.85 грн
10+ 391.51 грн
100+ 320.77 грн
500+ 256.26 грн
1000+ 216.42 грн
DPF60I200HA DPF60I200HA IXYS Description: DIODE ARRAY GP 200V 60A TO247AD
товар відсутній
DPF60XA400NA IXYS Description: DIODE MODULE 400V 60A SOT227B
товар відсутній
DPG10I400PA DPG10I400PA IXYS DPG10I400PA.pdf Description: DIODE GEN PURP 400V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 10 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
на замовлення 184 шт:
термін постачання 21-31 дні (днів)
2+159.95 грн
10+ 138.35 грн
100+ 111.23 грн
Мінімальне замовлення: 2
DPG10I400PM IXYS DPG10I400PM.pdf Description: DIODE GEN PURP 400V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 10 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
2+157.82 грн
10+ 136.64 грн
Мінімальне замовлення: 2
DPG30C300HB DPG30C300HB IXYS DPG30C300HB.pdf Description: DIODE ARRAY GP 300V 15A TO247AD
товар відсутній
DSEC16-06AC DSEC16-06AC IXYS 98805.pdf Description: DIODE ARR GP 600V 10A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ISOPLUS220™
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 60 V
товар відсутній
DSEC29-02AS-TUBE DSEC29-02AS-TUBE IXYS DSEC29-02AS.pdf Description: DIODE ARRAY GP 200V 15A TO263
товар відсутній
DSEC29-06AC DSEC29-06AC IXYS DSEC29-06AC.pdf Description: DIODE ARRAY 600V 15A ISOPLUS220
товар відсутній
DSEC59-03AQ DSEC59-03AQ IXYS Description: DIODE ARRAY GP 300V 30A TO3P
товар відсутній
DSEC59-06BC IXYS DSE(A,C)-06BC.pdf Description: DIODE ARRAY 600V 30A ISOPLUS220
товар відсутній
DSEE15-06CC DSEE15-06CC IXYS DSEE15-06CC.pdf Description: DIODE ARRAY 600V 15A ISOPLUS220
товар відсутній
DSEE8-06CC IXYS 98774.pdf Description: DIODE ARRAY 600V 10A ISOPLUS220
товар відсутній
IXTT48P20P DS99981(IXTH-T48P20P).pdf
IXTT48P20P
Виробник: IXYS
Description: MOSFET P-CH 200V 48A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 500mA, 10V
Power Dissipation (Max): 462W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
товар відсутній
IXTT90P10P littelfuse_discrete_mosfets_p-channel_ixt_90p10p_datasheet.pdf.pdf
IXTT90P10P
Виробник: IXYS
Description: MOSFET P-CH 100V 90A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 45A, 10V
Power Dissipation (Max): 462W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
товар відсутній
IXTU12N06T 99947.pdf
IXTU12N06T
Виробник: IXYS
Description: MOSFET N-CH 60V 12A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 6A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-251AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
товар відсутній
IXTX170P10P littelfuse_discrete_mosfets_p-channel_ixt_170p10p_datasheet.pdf.pdf
IXTX170P10P
Виробник: IXYS
Description: MOSFET P-CH 100V 170A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
на замовлення 89 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1339.34 грн
30+ 1069.26 грн
IXTX32P60P DS99990(IXTK-TX32P60P).pdf
IXTX32P60P
Виробник: IXYS
Description: MOSFET P-CH 600V 32A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 16A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V
на замовлення 664 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1339.34 грн
30+ 1069.26 грн
120+ 1002.42 грн
510+ 802.76 грн
IXTX40P50P littelfuse_discrete_mosfets_p-channel_ixt_40p50p_datasheet.pdf.pdf
IXTX40P50P
Виробник: IXYS
Description: MOSFET P-CH 500V 40A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 20A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 25 V
на замовлення 1277 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1339.34 грн
30+ 1069.26 грн
120+ 1002.42 грн
510+ 802.76 грн
IXTX90P20P littelfuse_discrete_mosfets_p-channel_ixt_90p20p_datasheet.pdf.pdf
IXTX90P20P
Виробник: IXYS
Description: MOSFET P-CH 200V 90A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 22A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
товар відсутній
IXTY12N06T 99947.pdf
IXTY12N06T
Виробник: IXYS
Description: MOSFET N-CH 60V 12A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 6A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
товар відсутній
IXFH10N100P DS99922(IXFH-FV10N100P_S).pdf
IXFH10N100P
Виробник: IXYS
Description: MOSFET N-CH 1000V 10A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 5A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3030 pF @ 25 V
товар відсутній
IXGA20N120A3 littelfuse_discrete_igbts_pt_ixg_20n120a3_datasheet.pdf.pdf
IXGA20N120A3
Виробник: IXYS
Description: IGBT PT 1200V 40A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/290ns
Switching Energy: 2.85mJ (on), 6.47mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 50 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 180 W
товар відсутній
IXGH20N120A3 littelfuse_discrete_igbts_pt_ixg_20n120a3_datasheet.pdf.pdf
IXGH20N120A3
Виробник: IXYS
Description: IGBT 1200V 40A 180W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/290ns
Switching Energy: 2.85mJ (on), 6.47mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 50 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 180 W
на замовлення 780 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+501.19 грн
30+ 385.26 грн
120+ 344.71 грн
510+ 285.43 грн
IXGP20N120A3 littelfuse_discrete_igbts_pt_ixg_20n120a3_datasheet.pdf.pdf
IXGP20N120A3
Виробник: IXYS
Description: IGBT 1200V 40A 180W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/290ns
Switching Energy: 2.85mJ (on), 6.47mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 50 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 180 W
на замовлення 36 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+432.94 грн
IXGA24N120C3 littelfuse_discrete_igbts_pt_ixg_24n120c3_datasheet.pdf.pdf
IXGA24N120C3
Виробник: IXYS
Description: IGBT 1200V 48A 250W TO263
товар відсутній
IXGH24N120C3 littelfuse_discrete_igbts_pt_ixg_24n120c3_datasheet.pdf.pdf
IXGH24N120C3
Виробник: IXYS
Description: IGBT 1200V 48A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/93ns
Switching Energy: 1.16mJ (on), 470µJ (off)
Test Condition: 600V, 20A, 5Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 250 W
на замовлення 1178 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+556.64 грн
30+ 427.88 грн
120+ 382.84 грн
510+ 317.01 грн
1020+ 285.31 грн
IXGH24N120C3H1 littelfuse_discrete_igbts_pt_ixgh24n120c3h1_datasheet.pdf.pdf
IXGH24N120C3H1
Виробник: IXYS
Description: IGBT 1200V 48A 250W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/93ns
Switching Energy: 1.16mJ (on), 470µJ (off)
Test Condition: 600V, 20A, 5Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 250 W
товар відсутній
IXGP24N120C3 littelfuse_discrete_igbts_pt_ixg_24n120c3_datasheet.pdf.pdf
IXGP24N120C3
Виробник: IXYS
Description: IGBT 1200V 48A 250W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/93ns
Switching Energy: 1.16mJ (on), 470µJ (off)
Test Condition: 600V, 20A, 5Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 250 W
товар відсутній
IXGR24N120C3D1 littelfuse_discrete_igbts_pt_ixgr24n120c3d1_datasheet.pdf.pdf
IXGR24N120C3D1
Виробник: IXYS
Description: IGBT 1200V 48A 200W ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 220 ns
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/93ns
Switching Energy: 1.37mJ (on), 470µJ (off)
Test Condition: 600V, 20A, 5Ohm, 15V
Gate Charge: 79 nC
Part Status: Active
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 200 W
товар відсутній
IXGH30N120C3H1 littelfuse_discrete_igbts_pt_ixgh30n120c3h1_datasheet.pdf.pdf
IXGH30N120C3H1
Виробник: IXYS
Description: IGBT 1200V 48A 250W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/106ns
Switching Energy: 1.45mJ (on), 470µJ (off)
Test Condition: 600V, 24A, 5Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 115 A
Power - Max: 250 W
товар відсутній
IXGA30N120B3 littelfuse_discrete_igbts_pt_ixg_30n120b3_datasheet.pdf.pdf
IXGA30N120B3
Виробник: IXYS
Description: IGBT 1200V 60A 300W TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/127ns
Switching Energy: 3.47mJ (on), 2.16mJ (off)
Test Condition: 960V, 30A, 5Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 300 W
на замовлення 260 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+516.83 грн
50+ 397.35 грн
100+ 355.53 грн
IXGP30N120B3 littelfuse_discrete_igbts_pt_ixg_30n120b3_datasheet.pdf.pdf
IXGP30N120B3
Виробник: IXYS
Description: IGBT PT 1200V 60A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/127ns
Switching Energy: 3.47mJ (on), 2.16mJ (off)
Test Condition: 960V, 30A, 5Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 300 W
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+505.45 грн
IXGT32N120A3 littelfuse_discrete_igbts_pt_ixg_32n120a3_datasheet.pdf.pdf
IXGT32N120A3
Виробник: IXYS
Description: IGBT PT 1200V 75A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 32A
Supplier Device Package: TO-268AA
IGBT Type: PT
Gate Charge: 89 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 300 W
товар відсутній
IXGH40N120C3 littelfuse_discrete_igbts_pt_ixgh40n120c3_datasheet.pdf.pdf
IXGH40N120C3
Виробник: IXYS
Description: IGBT 1200V 75A 380W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.4V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 17ns/130ns
Switching Energy: 1.8mJ (on), 550µJ (off)
Test Condition: 600V, 30A, 3Ohm, 15V
Gate Charge: 142 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 380 W
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
300+560.47 грн
Мінімальне замовлення: 300
IXGH40N120C3D1 littelfuse_discrete_igbts_pt_ixgh40n120c3d1_datasheet.pdf.pdf
IXGH40N120C3D1
Виробник: IXYS
Description: IGBT 1200V 75A 380W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 4.4V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 17ns/130ns
Switching Energy: 1.8mJ (on), 550µJ (off)
Test Condition: 600V, 30A, 3Ohm, 15V
Gate Charge: 142 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 380 W
на замовлення 289 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+918.49 грн
30+ 715.68 грн
120+ 673.59 грн
IXGH50N120C3 littelfuse_discrete_igbts_pt_ixgh50n120c3_datasheet.pdf.pdf
IXGH50N120C3
Виробник: IXYS
Description: IGBT 1200V 75A 460W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 40A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/123ns
Switching Energy: 2.2mJ (on), 630µJ (off)
Test Condition: 600V, 40A, 2Ohm, 15V
Gate Charge: 196 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 460 W
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1102.61 грн
10+ 935.4 грн
IXGK120N120A3 littelfuse_discrete_igbts_pt_ixg_120n120a3_datasheet.pdf.pdf
IXGK120N120A3
Виробник: IXYS
Description: IGBT PT 1200V 240A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/490ns
Switching Energy: 10mJ (on), 33mJ (off)
Test Condition: 960V, 100A, 1Ohm, 15V
Gate Charge: 420 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 830 W
на замовлення 53 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+2469.68 грн
25+ 1971.55 грн
IXGX120N120A3 littelfuse_discrete_igbts_pt_ixg_120n120a3_datasheet.pdf.pdf
IXGX120N120A3
Виробник: IXYS
Description: IGBT 1200V 240A 830W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/490ns
Switching Energy: 10mJ (on), 33mJ (off)
Test Condition: 960V, 100A, 1Ohm, 15V
Gate Charge: 420 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 830 W
товар відсутній
DPG30I300HA DPG30I300HA.pdf
DPG30I300HA
Виробник: IXYS
Description: DIODE GEN PURP 300V 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
товар відсутній
IXTK140N30P a
IXTK140N30P
Виробник: IXYS
Description: MOSFET N-CH 300V 140A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 70A, 10V
Vgs(th) (Max) @ Id: 5V @ 500µA
Supplier Device Package: TO-264 (IXTK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14800 pF @ 25 V
на замовлення 17 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1477.26 грн
10+ 1263.52 грн
CS19-08ho1S-TUBE CS19-08ho1.pdf
CS19-08ho1S-TUBE
Виробник: IXYS
Description: THYRISTOR PHASE 19A 800V TO-263
товар відсутній
CS19-12ho1S-TUBE CS19-08ho1.pdf
CS19-12ho1S-TUBE
Виробник: IXYS
Description: THYRISTOR PHASE 19A 1200V TO-263
товар відсутній
CS20-25mo1F Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCS20-25mo1F.pdf
Виробник: IXYS
Description: SCR 2.5KV I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
SCR Type: Standard Recovery
Supplier Device Package: ISOPLUS i4-PAC™
Voltage - Off State: 2.5 kV
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+2956.65 грн
10+ 2536.96 грн
100+ 2226.82 грн
DFE10I600PM DFE10I600PM.pdf
DFE10I600PM
Виробник: IXYS
Description: DIODE GP 600V 10A TO220ACFP
на замовлення 3820 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+144.31 грн
10+ 124.93 грн
100+ 100.41 грн
500+ 77.42 грн
1000+ 64.43 грн
Мінімальне замовлення: 2
DGS10-018AS-TUBE DGS10-018A,AS,%20DGSK20-018A.pdf
DGS10-018AS-TUBE
Виробник: IXYS
Description: DIODE SCHOTTKY 180V 15A TO263AB
товар відсутній
DGS20-018AS-TUBE DGS,DGSK%2020,40-018A,%20AS.pdf
DGS20-018AS-TUBE
Виробник: IXYS
Description: DIODE SCHOTTKY 180V 23A TO263AB
товар відсутній
DGSK20-025AS-TUBE DGS,DGSK%209,%2010,%2020-025A,AS.pdf
DGSK20-025AS-TUBE
Виробник: IXYS
Description: DIODE ARRAY SCHOTTKY 250V TO263
товар відсутній
DHF30IM600PN DHF30IM600PN.pdf
Виробник: IXYS
Description: DIODE GP 600V 15A TO220ABFP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220ABFP
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.37 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товар відсутній
DHF30IM600QB DHF30IM600QB.pdf
DHF30IM600QB
Виробник: IXYS
Description: DIODE GEN PURP 600V 30A TO3P
товар відсутній
DHG100X1200NA DHG100X1200NA.pdf
DHG100X1200NA
Виробник: IXYS
Description: DIODE MODULE 1.2KV 50A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.16 V @ 50 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
товар відсутній
DHG100X600NA
Виробник: IXYS
Description: DIODE MODULE 600V 100A SOT227B
товар відсутній
DHG50X1200NA DHG50X1200NA.pdf
DHG50X1200NA
Виробник: IXYS
Description: DIODE MODULE 1.2KV 25A SOT227B
товар відсутній
DHG50X600NA
DHG50X600NA
Виробник: IXYS
Description: DIODE MODULE GP 600V 50A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: SOT-227B
Voltage - DC Reverse (Vr) (Max): 600 V
товар відсутній
DHG60I1200HA DHG60I1200HA.pdf
DHG60I1200HA
Виробник: IXYS
Description: DIODE GEN PURP 1.2KV 60A TO247AD
на замовлення 2280 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
30+560.45 грн
Мінімальне замовлення: 30
DHG60I600HA
DHG60I600HA
Виробник: IXYS
Description: DIODE GEN PURP 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
на замовлення 150 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
30+1165.08 грн
Мінімальне замовлення: 30
DLA20IM800PC-TRL DLA20IM800PC.pdf
DLA20IM800PC-TRL
Виробник: IXYS
Description: DIODE GEN PURP 800V 20A TO263
товар відсутній
DPF120X400NA
Виробник: IXYS
Description: DIODE MODULE 400V 120A SOT227B
товар відсутній
DPF240X200NA DPF240X200NA.pdf
DPF240X200NA
Виробник: IXYS
Description: DIODE ARRAY 200V 120A SOT227B
товар відсутній
DPF400C400NB
Виробник: IXYS
Description: DIODE MODULE 400V 400A SOT227B
товар відсутній
DPF60C200HB
DPF60C200HB
Виробник: IXYS
Description: DIODE ARRAY GP 200V 60A TO247AD
на замовлення 4350 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+452.85 грн
10+ 391.51 грн
100+ 320.77 грн
500+ 256.26 грн
1000+ 216.42 грн
DPF60I200HA
DPF60I200HA
Виробник: IXYS
Description: DIODE ARRAY GP 200V 60A TO247AD
товар відсутній
DPF60XA400NA
Виробник: IXYS
Description: DIODE MODULE 400V 60A SOT227B
товар відсутній
DPG10I400PA DPG10I400PA.pdf
DPG10I400PA
Виробник: IXYS
Description: DIODE GEN PURP 400V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 10 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
на замовлення 184 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+159.95 грн
10+ 138.35 грн
100+ 111.23 грн
Мінімальне замовлення: 2
DPG10I400PM DPG10I400PM.pdf
Виробник: IXYS
Description: DIODE GEN PURP 400V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 10 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+157.82 грн
10+ 136.64 грн
Мінімальне замовлення: 2
DPG30C300HB DPG30C300HB.pdf
DPG30C300HB
Виробник: IXYS
Description: DIODE ARRAY GP 300V 15A TO247AD
товар відсутній
DSEC16-06AC 98805.pdf
DSEC16-06AC
Виробник: IXYS
Description: DIODE ARR GP 600V 10A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ISOPLUS220™
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 60 V
товар відсутній
DSEC29-02AS-TUBE DSEC29-02AS.pdf
DSEC29-02AS-TUBE
Виробник: IXYS
Description: DIODE ARRAY GP 200V 15A TO263
товар відсутній
DSEC29-06AC DSEC29-06AC.pdf
DSEC29-06AC
Виробник: IXYS
Description: DIODE ARRAY 600V 15A ISOPLUS220
товар відсутній
DSEC59-03AQ
DSEC59-03AQ
Виробник: IXYS
Description: DIODE ARRAY GP 300V 30A TO3P
товар відсутній
DSEC59-06BC DSE(A,C)-06BC.pdf
Виробник: IXYS
Description: DIODE ARRAY 600V 30A ISOPLUS220
товар відсутній
DSEE15-06CC DSEE15-06CC.pdf
DSEE15-06CC
Виробник: IXYS
Description: DIODE ARRAY 600V 15A ISOPLUS220
товар відсутній
DSEE8-06CC 98774.pdf
Виробник: IXYS
Description: DIODE ARRAY 600V 10A ISOPLUS220
товар відсутній
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