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MDD200-22N1 IXYS MDD200-22N1.pdf Description: DIODE MODULE GP 2200V 224A Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 224A
Supplier Device Package: Y4-M6
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 20 mA @ 2200 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
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MIAA10WB600TMH IXYS MIAA10WB600TMH.pdf Description: MODULE IGBT CBI
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MIAA10WD600TMH IXYS MIAA10WD600TMH.pdf Description: IGBT MOD 600V 18A 70W MINIPACK2
Packaging: Box
Package / Case: MiniPack2
Mounting Type: Chassis Mount
Input: Single Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 10A
NTC Thermistor: Yes
Supplier Device Package: MiniPack2
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 70 W
Current - Collector Cutoff (Max): 600 µA
Input Capacitance (Cies) @ Vce: 450 pF @ 25 V
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MIAA10WE600TMH IXYS MIAA10WE600TMH.pdf Description: MODULE IGBT CBI
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MIAA10WF600TMH IXYS MIAA10WF600TMH.pdf Description: MODULE IGBT CBI
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MIAA15WB600TMH IXYS Description: IGBT MOD 600V 23A 80W MINIPACK2
Packaging: Box
Package / Case: MiniPack2
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: MiniPack2
IGBT Type: NPT
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 80 W
Current - Collector Cutoff (Max): 600 µA
Input Capacitance (Cies) @ Vce: 700 pF @ 25 V
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MIAA15WD600TMH IXYS MIAA15WD600TMH.pdf Description: IGBT MOD 600V 23A 80W MINIPACK2
Packaging: Box
Package / Case: MiniPack2
Mounting Type: Chassis Mount
Input: Single Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: MiniPack2
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 80 W
Current - Collector Cutoff (Max): 600 µA
Input Capacitance (Cies) @ Vce: 700 pF @ 25 V
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MIAA15WE600TMH IXYS MIAA15WE600TMH.pdf Description: MODULE IGBT CBI
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MIAA20WB600TMH IXYS Description: IGBT MOD 600V 29A 100W MINIPACK2
Packaging: Box
Package / Case: MiniPack2
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: MiniPack2
IGBT Type: NPT
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 100 W
Current - Collector Cutoff (Max): 1.1 mA
Input Capacitance (Cies) @ Vce: 900 pF @ 25 V
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MIAA20WD600TMH IXYS MIAA20WD600TMH.pdf Description: IGBT MOD 600V 29A 100W MINIPACK2
Packaging: Box
Package / Case: MiniPack2
Mounting Type: Chassis Mount
Input: Single Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: MiniPack2
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 100 W
Current - Collector Cutoff (Max): 1.1 mA
Input Capacitance (Cies) @ Vce: 900 pF @ 25 V
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MIAA20WE600TMH IXYS MIAA20WE600TMH.pdf Description: MODULE IGBT CBI
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MII300-12E4 IXYS MII300-12E4.pdf Description: IGBT MOD 1200V 280A 1100W Y3LI
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Y3-Li
Packaging: Box
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
Current - Collector Cutoff (Max): 3.3 mA
Power - Max: 1100 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 280 A
IGBT Type: NPT
Supplier Device Package: Y3-Li
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 200A
Operating Temperature: -40°C ~ 150°C (TJ)
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MITA10WB1200TMH IXYS MITA10WB1200TMH.pdf Description: MODULE IGBT CBI
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MITA15WB1200TMH IXYS MITA15WB1200TMH.pdf Description: MODULE IGBT CBI
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MITB10WB1200TMH IXYS MITB10WB1200TMH.pdf Description: MODULE IGBT CBI
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MITB15WB1200TMH IXYS MITB15WB1200TMH.pdf Description: MODULE IGBT CBI
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MKI100-12F8 IXYS Description: IGBT MODULE 1200V 125A 640W E3
Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
Current - Collector Cutoff (Max): 1.3 mA
Power - Max: 640 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 125 A
Part Status: Active
IGBT Type: NPT
Supplier Device Package: E3
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 100A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Full Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: E3
Packaging: Box
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MKI50-12F7 IXYS Description: IGBT MODULE 1200V 65A 350W E2
Configuration: Full Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: E2
Packaging: Box
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Current - Collector Cutoff (Max): 700 µA
Power - Max: 350 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 65 A
Part Status: Active
IGBT Type: NPT
Supplier Device Package: E2
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 50A
Operating Temperature: -40°C ~ 125°C (TJ)
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MKI80-06T6K IXYS MKI80-06T6K.pdf Description: IGBT MODULE 600V 89A 210W E1
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
Current - Collector Cutoff (Max): 500 µA
Power - Max: 210 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 89 A
IGBT Type: Trench
Supplier Device Package: E1
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Full Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: E1
Packaging: Box
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MUBW15-12T7 IXYS MUBW15-12T7.pdf Description: IGBT MODULE 1200V 30A 140W E2
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MUBW25-12T7 IXYS MUBW25-12T7.pdf Description: IGBT MODULE 1200V 45A 170W E2
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MUBW40-12T7 IXYS MUBW40-12T7.pdf Description: IGBT MODULE 1200V 62A 220W E2
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
Current - Collector Cutoff (Max): 1.75 mA
Power - Max: 220 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 62 A
IGBT Type: Trench
Supplier Device Package: E2
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter with Brake
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: E2
Packaging: Box
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MUBW45-12T6K IXYS MUBW45-12T6K.pdf Description: IGBT MODULE 1200V 43A 160W E1
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MUBW50-12T8 IXYS MUBW50-12T8.pdf Description: IGBT MODULE 1200V 80A 270W E3
Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V
Current - Collector Cutoff (Max): 2.7 mA
Power - Max: 270 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 80 A
IGBT Type: Trench
Supplier Device Package: E3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Three Phase Inverter with Brake
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: E3
Packaging: Box
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MUBW50-17T8 IXYS Description: IGBT MODULE 1700V 74A 290W E3
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
Current - Collector Cutoff (Max): 400 µA
Power - Max: 290 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 74 A
IGBT Type: Trench
Supplier Device Package: E3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Three Phase Inverter with Brake
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: E3
Packaging: Box
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MUBW75-12T8 IXYS MUBW75-12T8.pdf Description: IGBT MODULE 1200V 110A 355W E3
Input Capacitance (Cies) @ Vce: 5.35 nF @ 25 V
Current - Collector Cutoff (Max): 4 mA
Power - Max: 355 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 110 A
Part Status: Active
IGBT Type: Trench
Supplier Device Package: E3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Three Phase Inverter with Brake
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: E3
Packaging: Box
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MUBW75-17T8 IXYS MUBW75-17T8.pdf Description: IGBT MODULE 1700V 113A 450W E3
Input Capacitance (Cies) @ Vce: 6.6 nF @ 25 V
Current - Collector Cutoff (Max): 800 µA
Power - Max: 450 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 113 A
Part Status: Active
IGBT Type: Trench
Supplier Device Package: E3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 75A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Three Phase Inverter with Brake
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: E3
Packaging: Box
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MWI100-12T8T IXYS MWI100-12T8T.pdf Description: MOD IGBT TRENCH SIXPACK E3
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MWI150-12T8T IXYS MWI150-12T8T.pdf Description: MOD IGBT TRENCH SIXPACK E3
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MWI15-12A6K IXYS MWI15-12A6K.pdf Description: MOD IGBT RBSOA SIXPACK E1
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MWI225-12E9 IXYS MWI225-12E9.pdf Description: MOD IGBT SIXPACK E+
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MWI225-17E9 IXYS MWI225-17E9.pdf Description: IGBT MODULE 1700V 335A 1400W E+
Input Capacitance (Cies) @ Vce: 22 nF @ 25 V
Current - Collector Cutoff (Max): 600 µA
Power - Max: 1400 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 335 A
Part Status: Active
IGBT Type: NPT
Supplier Device Package: E+
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 225A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Three Phase
Input: Standard
Mounting Type: Chassis Mount
Package / Case: E+
Packaging: Box
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MWI300-12E9 IXYS MWI300-12E9.pdf Description: IGBT MODULE 1200V 530A 2100W E+
Mounting Type: Chassis Mount
Package / Case: E+
Packaging: Box
Input Capacitance (Cies) @ Vce: 22 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 2100 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 530 A
Part Status: Obsolete
IGBT Type: NPT
Supplier Device Package: E+
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 300A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Three Phase
Input: Standard
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MWI300-17E9 IXYS MWI300-17E9.pdf Description: IGBT MODULE 1700V 500A 2200W E+
Packaging: Box
Package / Case: E+
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: E+
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2200 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 33 nF @ 25 V
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MWI450-12E9 IXYS Description: IGBT MODULE 1200V 640A 2200W E+
Packaging: Box
Package / Case: E+
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: E+
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 640 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2200 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 33 nF @ 25 V
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MWI50-12T7T IXYS Description: IGBT MODULE 1200V 80A 270W E2
Packaging: Box
Package / Case: E2
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: E2
IGBT Type: Trench
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 270 W
Current - Collector Cutoff (Max): 4 mA
Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V
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MWI60-06G6K IXYS MWI60-06G6K.pdf Description: IGBT MODULE 600V 60A 180W E1
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
Current - Collector Cutoff (Max): 200 µA
Power - Max: 180 W
Packaging: Box
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 60 A
Supplier Device Package: E1
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 30A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: E1
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MWI75-12T7T IXYS MWI75-12T7T.pdf Description: IGBT MOD TRENCH SIX-PACK E3
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MWI75-12T8T IXYS Description: IGBT MODULE 1200V 110A 360W E3
Input Capacitance (Cies) @ Vce: 5.35 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 360 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 110 A
IGBT Type: Trench
Supplier Device Package: E3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: E3
Packaging: Box
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VUB135-22NO1 IXYS media?resourcetype=datasheets&itemid=633EF3F8-FCB9-440E-BF5F-9F1D8A39DFA4&filename=Littelfuse-Power-Semiconductors-VUB135-22NO1-Datasheet Description: BRIDGE RECT 3P 2.2KV 150A E2
Current - Reverse Leakage @ Vr: 100 µA @ 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 50 A
Current - Average Rectified (Io): 150 A
Voltage - Peak Reverse (Max): 2.2 kV
Supplier Device Package: E2
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase (Braking)
Mounting Type: Chassis Mount
Package / Case: E2
Packaging: Box
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IXFH160N15T IXFH160N15T IXYS Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXFH160N15T-Datasheet.PDF?assetguid=B9B32D06-6B37-4FB0-9F26-E704C46FA379 Description: MOSFET N-CH 150V 160A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 500mA, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V
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IXTA10P50P IXTA10P50P IXYS littelfuse_discrete_mosfets_p-channel_ixt_10p50p_datasheet.pdf.pdf Description: MOSFET P-CH 500V 10A TO263
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tube
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IXTA120N04T2 IXTA120N04T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_120n04t2_datasheet.pdf.pdf Description: MOSFET N-CH 40V 120A TO263
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
на замовлення 1950 шт:
термін постачання 21-31 дні (днів)
300+133.10 грн
Мінімальне замовлення: 300
В кошику  од. на суму  грн.
IXTA170N075T2 IXTA170N075T2 IXYS 99970A.pdf Description: MOSFET N-CH 75V 170A TO263
на замовлення 2050 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IXTA18P10T IXTA18P10T IXYS littelfuse-discrete-mosfets-ixt-18p10t-datasheet?assetguid=5c1b0780-b7a9-4cdb-8b92-3cdd987c0682 Description: MOSFET P-CH 100V 18A TO263
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
на замовлення 1400 шт:
термін постачання 21-31 дні (днів)
300+103.60 грн
Мінімальне замовлення: 300
В кошику  од. на суму  грн.
IXTA200N055T2 IXTA200N055T2 IXYS Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXT-200N055T2-Datasheet.PDF?assetguid=B44D58FE-55F9-4C2C-B4B4-13EDAC81DC00 Description: MOSFET N-CH 55V 200A TO263
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
на замовлення 997 шт:
термін постачання 21-31 дні (днів)
1+351.28 грн
50+176.01 грн
100+160.35 грн
500+124.73 грн
В кошику  од. на суму  грн.
IXTA220N04T2 IXTA220N04T2 IXYS littelfuse-discrete-mosfets-ixt-220n04t2-datasheet?assetguid=e899b100-270e-42ae-bac4-64df6dabba7a Description: MOSFET N-CH 40V 220A TO-263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6820 pF @ 25 V
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IXTA220N04T2-7 IXTA220N04T2-7 IXYS littelfuse-discrete-mosfets-ixta220n04t2-7-datasheet?assetguid=14879344-6afc-4a13-b7a9-eca221b2b9ae Description: MOSFET N-CH 40V 220A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6820 pF @ 25 V
на замовлення 1200 шт:
термін постачання 21-31 дні (днів)
300+254.13 грн
Мінімальне замовлення: 300
В кошику  од. на суму  грн.
IXTA28P065T IXTA28P065T IXYS DS99968B(IXTA-TP28P065T).pdf Description: MOSFET P-CH 65V 28A TO-263
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IXTA32N20T IXTA32N20T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_32n20t_datasheet.pdf.pdf Description: MOSFET N-CH 200V 32A TO263
Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
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IXTA48N20T IXTA48N20T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_48n20t_datasheet.pdf.pdf Description: MOSFET N-CH 200V 48A TO263
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AA
на замовлення 1050 шт:
термін постачання 21-31 дні (днів)
2+313.30 грн
10+253.85 грн
100+205.39 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTA70N075T2 IXTA70N075T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_70n075t2_datasheet.pdf.pdf Description: MOSFET N-CH 75V 70A TO263
Input Capacitance (Ciss) (Max) @ Vds: 2725 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
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IXTA90N075T2 IXTA90N075T2 IXYS littelfuse-discrete-mosfets-ixt-90n075t2-datasheet?assetguid=4d4fcb19-8221-44b3-8493-7ff79dcb0d2d Description: MOSFET N-CH 75V 90A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
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IXTA96P085T IXTA96P085T IXYS littelfuse-discrete-mosfets-ixt-96p085t-datasheet?assetguid=961f5f5c-1ad9-4e7d-b8e3-2e5ee68588a7 Description: MOSFET P-CH 85V 96A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 48A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
на замовлення 4029 шт:
термін постачання 21-31 дні (днів)
1+620.27 грн
50+326.44 грн
100+300.34 грн
500+238.98 грн
1000+229.43 грн
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IXTH26P20P IXTH26P20P IXYS IX%28T%2CH%2CP%2CQ%29A26P20P.pdf Description: MOSFET P-CH 200V 26A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 25 V
на замовлення 163 шт:
термін постачання 21-31 дні (днів)
1+509.51 грн
30+280.90 грн
120+244.27 грн
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IXTH44P15T IXTH44P15T IXYS littelfuse-discrete-mosfets-ixt-44p15t-datasheet?assetguid=7f3ca350-d79f-4e06-bce3-4b5b84d96ba2 Description: MOSFET P-CH 150V 44A TO247
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 298W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 715 шт:
термін постачання 21-31 дні (днів)
1+732.62 грн
30+417.93 грн
120+354.77 грн
510+289.52 грн
В кошику  од. на суму  грн.
IXTK40P50P IXTK40P50P IXYS littelfuse-discrete-mosfets-ixt-40p50p-datasheet?assetguid=e34ee140-6c7c-4026-98f4-4b32d9d0efc6 Description: MOSFET P-CH 500V 40A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 20A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-264 (IXTK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 25 V
на замовлення 1318 шт:
термін постачання 21-31 дні (днів)
1+1816.51 грн
25+1143.77 грн
100+1000.26 грн
500+923.41 грн
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IXTN170P10P IXTN170P10P IXYS littelfuse-discrete-mosfets-ixtn170p10p-datasheet?assetguid=a5324887-08b2-496a-afd1-beb2354decfc Description: MOSFET P-CH 100V 170A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
на замовлення 525 шт:
термін постачання 21-31 дні (днів)
1+2887.74 грн
10+2077.90 грн
100+1801.62 грн
В кошику  од. на суму  грн.
IXTN32P60P IXTN32P60P IXYS DS99991(IXTN32P60P).pdf Description: MOSFET P-CH 600V 32A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V
на замовлення 228 шт:
термін постачання 21-31 дні (днів)
1+2825.24 грн
10+2509.26 грн
100+2142.75 грн
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IXTN90P20P IXTN90P20P IXYS littelfuse-discrete-mosfets-ixtn90p20p-datasheet?assetguid=86257c2d-7709-4444-8d3f-31234f9a495d Description: MOSFET P-CH 200V 90A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
на замовлення 225 шт:
термін постачання 21-31 дні (днів)
1+2887.74 грн
10+2077.90 грн
100+1801.62 грн
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MDD200-22N1 MDD200-22N1.pdf
Виробник: IXYS
Description: DIODE MODULE GP 2200V 224A Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 224A
Supplier Device Package: Y4-M6
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 20 mA @ 2200 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+7051.63 грн
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MIAA10WB600TMH MIAA10WB600TMH.pdf
Виробник: IXYS
Description: MODULE IGBT CBI
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MIAA10WD600TMH MIAA10WD600TMH.pdf
Виробник: IXYS
Description: IGBT MOD 600V 18A 70W MINIPACK2
Packaging: Box
Package / Case: MiniPack2
Mounting Type: Chassis Mount
Input: Single Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 10A
NTC Thermistor: Yes
Supplier Device Package: MiniPack2
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 70 W
Current - Collector Cutoff (Max): 600 µA
Input Capacitance (Cies) @ Vce: 450 pF @ 25 V
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MIAA10WE600TMH MIAA10WE600TMH.pdf
Виробник: IXYS
Description: MODULE IGBT CBI
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MIAA10WF600TMH MIAA10WF600TMH.pdf
Виробник: IXYS
Description: MODULE IGBT CBI
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MIAA15WB600TMH
Виробник: IXYS
Description: IGBT MOD 600V 23A 80W MINIPACK2
Packaging: Box
Package / Case: MiniPack2
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: MiniPack2
IGBT Type: NPT
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 80 W
Current - Collector Cutoff (Max): 600 µA
Input Capacitance (Cies) @ Vce: 700 pF @ 25 V
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MIAA15WD600TMH MIAA15WD600TMH.pdf
Виробник: IXYS
Description: IGBT MOD 600V 23A 80W MINIPACK2
Packaging: Box
Package / Case: MiniPack2
Mounting Type: Chassis Mount
Input: Single Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: MiniPack2
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 80 W
Current - Collector Cutoff (Max): 600 µA
Input Capacitance (Cies) @ Vce: 700 pF @ 25 V
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MIAA15WE600TMH MIAA15WE600TMH.pdf
Виробник: IXYS
Description: MODULE IGBT CBI
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MIAA20WB600TMH
Виробник: IXYS
Description: IGBT MOD 600V 29A 100W MINIPACK2
Packaging: Box
Package / Case: MiniPack2
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: MiniPack2
IGBT Type: NPT
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 100 W
Current - Collector Cutoff (Max): 1.1 mA
Input Capacitance (Cies) @ Vce: 900 pF @ 25 V
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MIAA20WD600TMH MIAA20WD600TMH.pdf
Виробник: IXYS
Description: IGBT MOD 600V 29A 100W MINIPACK2
Packaging: Box
Package / Case: MiniPack2
Mounting Type: Chassis Mount
Input: Single Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: MiniPack2
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 100 W
Current - Collector Cutoff (Max): 1.1 mA
Input Capacitance (Cies) @ Vce: 900 pF @ 25 V
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MIAA20WE600TMH MIAA20WE600TMH.pdf
Виробник: IXYS
Description: MODULE IGBT CBI
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MII300-12E4 MII300-12E4.pdf
Виробник: IXYS
Description: IGBT MOD 1200V 280A 1100W Y3LI
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Y3-Li
Packaging: Box
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
Current - Collector Cutoff (Max): 3.3 mA
Power - Max: 1100 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 280 A
IGBT Type: NPT
Supplier Device Package: Y3-Li
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 200A
Operating Temperature: -40°C ~ 150°C (TJ)
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MITA10WB1200TMH MITA10WB1200TMH.pdf
Виробник: IXYS
Description: MODULE IGBT CBI
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MITA15WB1200TMH MITA15WB1200TMH.pdf
Виробник: IXYS
Description: MODULE IGBT CBI
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MITB10WB1200TMH MITB10WB1200TMH.pdf
Виробник: IXYS
Description: MODULE IGBT CBI
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MITB15WB1200TMH MITB15WB1200TMH.pdf
Виробник: IXYS
Description: MODULE IGBT CBI
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MKI100-12F8
Виробник: IXYS
Description: IGBT MODULE 1200V 125A 640W E3
Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
Current - Collector Cutoff (Max): 1.3 mA
Power - Max: 640 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 125 A
Part Status: Active
IGBT Type: NPT
Supplier Device Package: E3
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 100A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Full Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: E3
Packaging: Box
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MKI50-12F7
Виробник: IXYS
Description: IGBT MODULE 1200V 65A 350W E2
Configuration: Full Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: E2
Packaging: Box
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Current - Collector Cutoff (Max): 700 µA
Power - Max: 350 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 65 A
Part Status: Active
IGBT Type: NPT
Supplier Device Package: E2
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 50A
Operating Temperature: -40°C ~ 125°C (TJ)
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MKI80-06T6K MKI80-06T6K.pdf
Виробник: IXYS
Description: IGBT MODULE 600V 89A 210W E1
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
Current - Collector Cutoff (Max): 500 µA
Power - Max: 210 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 89 A
IGBT Type: Trench
Supplier Device Package: E1
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Full Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: E1
Packaging: Box
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MUBW15-12T7 MUBW15-12T7.pdf
Виробник: IXYS
Description: IGBT MODULE 1200V 30A 140W E2
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MUBW25-12T7 MUBW25-12T7.pdf
Виробник: IXYS
Description: IGBT MODULE 1200V 45A 170W E2
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MUBW40-12T7 MUBW40-12T7.pdf
Виробник: IXYS
Description: IGBT MODULE 1200V 62A 220W E2
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
Current - Collector Cutoff (Max): 1.75 mA
Power - Max: 220 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 62 A
IGBT Type: Trench
Supplier Device Package: E2
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter with Brake
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: E2
Packaging: Box
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MUBW45-12T6K MUBW45-12T6K.pdf
Виробник: IXYS
Description: IGBT MODULE 1200V 43A 160W E1
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MUBW50-12T8 MUBW50-12T8.pdf
Виробник: IXYS
Description: IGBT MODULE 1200V 80A 270W E3
Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V
Current - Collector Cutoff (Max): 2.7 mA
Power - Max: 270 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 80 A
IGBT Type: Trench
Supplier Device Package: E3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Three Phase Inverter with Brake
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: E3
Packaging: Box
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MUBW50-17T8
Виробник: IXYS
Description: IGBT MODULE 1700V 74A 290W E3
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
Current - Collector Cutoff (Max): 400 µA
Power - Max: 290 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 74 A
IGBT Type: Trench
Supplier Device Package: E3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Three Phase Inverter with Brake
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: E3
Packaging: Box
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MUBW75-12T8 MUBW75-12T8.pdf
Виробник: IXYS
Description: IGBT MODULE 1200V 110A 355W E3
Input Capacitance (Cies) @ Vce: 5.35 nF @ 25 V
Current - Collector Cutoff (Max): 4 mA
Power - Max: 355 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 110 A
Part Status: Active
IGBT Type: Trench
Supplier Device Package: E3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Three Phase Inverter with Brake
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: E3
Packaging: Box
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MUBW75-17T8 MUBW75-17T8.pdf
Виробник: IXYS
Description: IGBT MODULE 1700V 113A 450W E3
Input Capacitance (Cies) @ Vce: 6.6 nF @ 25 V
Current - Collector Cutoff (Max): 800 µA
Power - Max: 450 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 113 A
Part Status: Active
IGBT Type: Trench
Supplier Device Package: E3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 75A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Three Phase Inverter with Brake
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: E3
Packaging: Box
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MWI100-12T8T MWI100-12T8T.pdf
Виробник: IXYS
Description: MOD IGBT TRENCH SIXPACK E3
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MWI150-12T8T MWI150-12T8T.pdf
Виробник: IXYS
Description: MOD IGBT TRENCH SIXPACK E3
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MWI15-12A6K MWI15-12A6K.pdf
Виробник: IXYS
Description: MOD IGBT RBSOA SIXPACK E1
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MWI225-12E9 MWI225-12E9.pdf
Виробник: IXYS
Description: MOD IGBT SIXPACK E+
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MWI225-17E9 MWI225-17E9.pdf
Виробник: IXYS
Description: IGBT MODULE 1700V 335A 1400W E+
Input Capacitance (Cies) @ Vce: 22 nF @ 25 V
Current - Collector Cutoff (Max): 600 µA
Power - Max: 1400 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 335 A
Part Status: Active
IGBT Type: NPT
Supplier Device Package: E+
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 225A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Three Phase
Input: Standard
Mounting Type: Chassis Mount
Package / Case: E+
Packaging: Box
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MWI300-12E9 MWI300-12E9.pdf
Виробник: IXYS
Description: IGBT MODULE 1200V 530A 2100W E+
Mounting Type: Chassis Mount
Package / Case: E+
Packaging: Box
Input Capacitance (Cies) @ Vce: 22 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 2100 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 530 A
Part Status: Obsolete
IGBT Type: NPT
Supplier Device Package: E+
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 300A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Three Phase
Input: Standard
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MWI300-17E9 MWI300-17E9.pdf
Виробник: IXYS
Description: IGBT MODULE 1700V 500A 2200W E+
Packaging: Box
Package / Case: E+
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: E+
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2200 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 33 nF @ 25 V
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MWI450-12E9
Виробник: IXYS
Description: IGBT MODULE 1200V 640A 2200W E+
Packaging: Box
Package / Case: E+
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: E+
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 640 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2200 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 33 nF @ 25 V
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MWI50-12T7T
Виробник: IXYS
Description: IGBT MODULE 1200V 80A 270W E2
Packaging: Box
Package / Case: E2
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: E2
IGBT Type: Trench
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 270 W
Current - Collector Cutoff (Max): 4 mA
Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V
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MWI60-06G6K MWI60-06G6K.pdf
Виробник: IXYS
Description: IGBT MODULE 600V 60A 180W E1
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
Current - Collector Cutoff (Max): 200 µA
Power - Max: 180 W
Packaging: Box
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 60 A
Supplier Device Package: E1
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 30A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: E1
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MWI75-12T7T MWI75-12T7T.pdf
Виробник: IXYS
Description: IGBT MOD TRENCH SIX-PACK E3
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MWI75-12T8T
Виробник: IXYS
Description: IGBT MODULE 1200V 110A 360W E3
Input Capacitance (Cies) @ Vce: 5.35 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 360 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 110 A
IGBT Type: Trench
Supplier Device Package: E3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: E3
Packaging: Box
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VUB135-22NO1 media?resourcetype=datasheets&itemid=633EF3F8-FCB9-440E-BF5F-9F1D8A39DFA4&filename=Littelfuse-Power-Semiconductors-VUB135-22NO1-Datasheet
Виробник: IXYS
Description: BRIDGE RECT 3P 2.2KV 150A E2
Current - Reverse Leakage @ Vr: 100 µA @ 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 50 A
Current - Average Rectified (Io): 150 A
Voltage - Peak Reverse (Max): 2.2 kV
Supplier Device Package: E2
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase (Braking)
Mounting Type: Chassis Mount
Package / Case: E2
Packaging: Box
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IXFH160N15T Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXFH160N15T-Datasheet.PDF?assetguid=B9B32D06-6B37-4FB0-9F26-E704C46FA379
IXFH160N15T
Виробник: IXYS
Description: MOSFET N-CH 150V 160A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 500mA, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V
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IXTA10P50P littelfuse_discrete_mosfets_p-channel_ixt_10p50p_datasheet.pdf.pdf
IXTA10P50P
Виробник: IXYS
Description: MOSFET P-CH 500V 10A TO263
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tube
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IXTA120N04T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_120n04t2_datasheet.pdf.pdf
IXTA120N04T2
Виробник: IXYS
Description: MOSFET N-CH 40V 120A TO263
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
на замовлення 1950 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
300+133.10 грн
Мінімальне замовлення: 300
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IXTA170N075T2 99970A.pdf
IXTA170N075T2
Виробник: IXYS
Description: MOSFET N-CH 75V 170A TO263
на замовлення 2050 шт:
термін постачання 21-31 дні (днів)
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IXTA18P10T littelfuse-discrete-mosfets-ixt-18p10t-datasheet?assetguid=5c1b0780-b7a9-4cdb-8b92-3cdd987c0682
IXTA18P10T
Виробник: IXYS
Description: MOSFET P-CH 100V 18A TO263
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
на замовлення 1400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
300+103.60 грн
Мінімальне замовлення: 300
В кошику  од. на суму  грн.
IXTA200N055T2 Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXT-200N055T2-Datasheet.PDF?assetguid=B44D58FE-55F9-4C2C-B4B4-13EDAC81DC00
IXTA200N055T2
Виробник: IXYS
Description: MOSFET N-CH 55V 200A TO263
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
на замовлення 997 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+351.28 грн
50+176.01 грн
100+160.35 грн
500+124.73 грн
В кошику  од. на суму  грн.
IXTA220N04T2 littelfuse-discrete-mosfets-ixt-220n04t2-datasheet?assetguid=e899b100-270e-42ae-bac4-64df6dabba7a
IXTA220N04T2
Виробник: IXYS
Description: MOSFET N-CH 40V 220A TO-263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6820 pF @ 25 V
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IXTA220N04T2-7 littelfuse-discrete-mosfets-ixta220n04t2-7-datasheet?assetguid=14879344-6afc-4a13-b7a9-eca221b2b9ae
IXTA220N04T2-7
Виробник: IXYS
Description: MOSFET N-CH 40V 220A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6820 pF @ 25 V
на замовлення 1200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
300+254.13 грн
Мінімальне замовлення: 300
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IXTA28P065T DS99968B(IXTA-TP28P065T).pdf
IXTA28P065T
Виробник: IXYS
Description: MOSFET P-CH 65V 28A TO-263
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
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IXTA32N20T littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_32n20t_datasheet.pdf.pdf
IXTA32N20T
Виробник: IXYS
Description: MOSFET N-CH 200V 32A TO263
Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
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IXTA48N20T littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_48n20t_datasheet.pdf.pdf
IXTA48N20T
Виробник: IXYS
Description: MOSFET N-CH 200V 48A TO263
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AA
на замовлення 1050 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+313.30 грн
10+253.85 грн
100+205.39 грн
Мінімальне замовлення: 2
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IXTA70N075T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_70n075t2_datasheet.pdf.pdf
IXTA70N075T2
Виробник: IXYS
Description: MOSFET N-CH 75V 70A TO263
Input Capacitance (Ciss) (Max) @ Vds: 2725 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
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IXTA90N075T2 littelfuse-discrete-mosfets-ixt-90n075t2-datasheet?assetguid=4d4fcb19-8221-44b3-8493-7ff79dcb0d2d
IXTA90N075T2
Виробник: IXYS
Description: MOSFET N-CH 75V 90A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
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IXTA96P085T littelfuse-discrete-mosfets-ixt-96p085t-datasheet?assetguid=961f5f5c-1ad9-4e7d-b8e3-2e5ee68588a7
IXTA96P085T
Виробник: IXYS
Description: MOSFET P-CH 85V 96A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 48A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
на замовлення 4029 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+620.27 грн
50+326.44 грн
100+300.34 грн
500+238.98 грн
1000+229.43 грн
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IXTH26P20P IX%28T%2CH%2CP%2CQ%29A26P20P.pdf
IXTH26P20P
Виробник: IXYS
Description: MOSFET P-CH 200V 26A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 25 V
на замовлення 163 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+509.51 грн
30+280.90 грн
120+244.27 грн
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IXTH44P15T littelfuse-discrete-mosfets-ixt-44p15t-datasheet?assetguid=7f3ca350-d79f-4e06-bce3-4b5b84d96ba2
IXTH44P15T
Виробник: IXYS
Description: MOSFET P-CH 150V 44A TO247
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 298W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 715 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+732.62 грн
30+417.93 грн
120+354.77 грн
510+289.52 грн
В кошику  од. на суму  грн.
IXTK40P50P littelfuse-discrete-mosfets-ixt-40p50p-datasheet?assetguid=e34ee140-6c7c-4026-98f4-4b32d9d0efc6
IXTK40P50P
Виробник: IXYS
Description: MOSFET P-CH 500V 40A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 20A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-264 (IXTK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 25 V
на замовлення 1318 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1816.51 грн
25+1143.77 грн
100+1000.26 грн
500+923.41 грн
В кошику  од. на суму  грн.
IXTN170P10P littelfuse-discrete-mosfets-ixtn170p10p-datasheet?assetguid=a5324887-08b2-496a-afd1-beb2354decfc
IXTN170P10P
Виробник: IXYS
Description: MOSFET P-CH 100V 170A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
на замовлення 525 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2887.74 грн
10+2077.90 грн
100+1801.62 грн
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IXTN32P60P DS99991(IXTN32P60P).pdf
IXTN32P60P
Виробник: IXYS
Description: MOSFET P-CH 600V 32A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V
на замовлення 228 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2825.24 грн
10+2509.26 грн
100+2142.75 грн
В кошику  од. на суму  грн.
IXTN90P20P littelfuse-discrete-mosfets-ixtn90p20p-datasheet?assetguid=86257c2d-7709-4444-8d3f-31234f9a495d
IXTN90P20P
Виробник: IXYS
Description: MOSFET P-CH 200V 90A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
на замовлення 225 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2887.74 грн
10+2077.90 грн
100+1801.62 грн
В кошику  од. на суму  грн.
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