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MIXA30W1200TMH IXYS MIXA30W1200TMH.pdf Description: IGBT MOD 1200V 43A MINIPACK2
товар відсутній
MIXA30W1200TML IXYS MIXA30W1200TML.pdf Description: IGBT MODULE 1200V 43A 150W E1
товар відсутній
MIXA30WB1200TED IXYS MIXA30WB1200TED.pdf Description: IGBT MODULE 1200V 43A 150W E2
товар відсутній
MIXA40W1200TED IXYS MIXA40W1200TED.pdf Description: IGBT MODULE 1200V 60A 195W E2
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+5265.15 грн
MIXA40W1200TMH IXYS MIXA40W1200TMH.pdf Description: IGBT MODULE 1200V 40A
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MIXA40W1200TML IXYS MIXA40W1200TML.pdf Description: IGBT MODULE 1200V 40A
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MIXA40WB1200TED MIXA40WB1200TED IXYS MIXA40WB1200TED.pdf Description: IGBT MODULE 1200V 60A 195W E2
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MIXA450PF1200TSF IXYS MIXA450PF1200TSF.pdf Description: IGBT MOD 1200V 650A 2100W
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+12151.9 грн
MIXA600PF650TSF IXYS MIXA600PF650TSF.pdf Description: IGBT MODULE 650V 490A
товар відсутній
MIXA60HU1200VA IXYS media?resourcetype=datasheets&itemid=2F78F28E-2571-4338-8456-BDC39156D376&filename=Littelfuse-IGBT-Modules-XPT-Modules-MIXA60HU1200VA-Datasheet.PDF Description: IGBT MOD 1200V 85A 290W V1A-PAK
Packaging: Box
Package / Case: V1A-PAK
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 55A
NTC Thermistor: No
Supplier Device Package: V1A-PAK
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 290 W
Current - Collector Cutoff (Max): 500 µA
товар відсутній
MIXA60W1200TED IXYS MIXA60W1200TED.pdf Description: IGBT MODULE 1200V 60A
товар відсутній
MIXA60WB1200TEH IXYS MIXA60WB1200TEH.pdf Description: IGBT MODULE 1200V 85A 290W E3
Packaging: Box
Package / Case: E3
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 55A
NTC Thermistor: Yes
Supplier Device Package: E3
IGBT Type: PT
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 290 W
Current - Collector Cutoff (Max): 500 µA
товар відсутній
MIXA61H1200ED IXYS MIXA61H1200ED.pdf Description: IGBT MODULE 1200V 60A
на замовлення 132 шт:
термін постачання 21-31 дні (днів)
MIXA80R1200VA IXYS MIXA80R1200VA.pdf Description: IGBT MOD 1200V 120A 390W V1A-PAK
товар відсутній
MIXA80W1200TED IXYS MIXA80W1200TED.pdf Description: IGBT MODULE 1200V 120A 390W E2
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MIXA80W1200TEH IXYS MIXA80W1200TEH.pdf Description: IGBT MODULE 1200V 120A 390W E3
товар відсутній
MIXA80WB1200TEH IXYS MIXA80WB1200TEH.pdf Description: IGBT MODULE 1200V 120A 390W E3
Packaging: Box
Package / Case: E3
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 77A
NTC Thermistor: Yes
Supplier Device Package: E3
IGBT Type: PT
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 390 W
Current - Collector Cutoff (Max): 200 µA
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+8387.96 грн
MIXA81H1200EH IXYS MIXA81H1200EH.pdf Description: IGBT MODULE 1200V 84A
товар відсутній
MIXA81WB1200TEH IXYS MIXA81WB1200TEH.pdf Description: IGBT MODULE 1200V 84A
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MKE11R600DCGFC IXYS MKE11R600DCGFC.pdf Description: MOSFET N-CH 600V 15A I4PAC
товар відсутній
MKE38P600LB IXYS SMPD%20MOSFET%20and%20IGBTs_Product%20Brief_01.pdf Description: MOSFET N-CH 600V 50A SMPD
товар відсутній
MKE38P600LB-TRR IXYS SMPD%20MOSFET%20and%20IGBTs_Product%20Brief_01.pdf Description: MOSFET N-CH 600V 50A SMPD
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MKE38RK600DFELB IXYS MKE38RK600DFELB.pdf Description: MOSFET N-CH 600V 50A SMPD
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MKE38RK600DFELB-TRR IXYS MKE38RK600DFELB.pdf Description: MOSFET N-CH 600V 50A SMPD
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MMIX1F132N50P3 IXYS littelfuse_discrete_mosfets_smpd_packages_mmix1f132n50p3_datasheet.pdf.pdf Description: MOSFET N-CH 500V 63A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 66A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V
на замовлення 860 шт:
термін постачання 21-31 дні (днів)
300+2427.17 грн
Мінімальне замовлення: 300
MMIX1F160N30T IXYS littelfuse_discrete_mosfets_smpd_packages_mmix1f160n30t_datasheet.pdf.pdf Description: MOSFET N-CH 300V 102A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 60A, 10V
Power Dissipation (Max): 570W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
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MMIX1F180N25T IXYS littelfuse_discrete_mosfets_smpd_packages_mmix1f180n25t_datasheet.pdf.pdf Description: MOSFET N-CH 250V 132A 24SMPD
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
1+3875.75 грн
10+ 3481.86 грн
MMIX1F230N20T IXYS littelfuse_discrete_mosfets_smpd_packages_mmix1f230n20t_datasheet.pdf.pdf Description: MOSFET N-CH 200V 168A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 168A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 60A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 378 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
товар відсутній
MMIX1F40N110P IXYS DS100431(MMIX1F40N110P).pdf Description: MOSFET N-CH 1100V 24A SMPD
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MMIX1F420N10T MMIX1F420N10T IXYS littelfuse_discrete_mosfets_smpd_packages_mmix1f420n10t_datasheet.pdf.pdf Description: MOSFET N-CH 100V 334A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 334A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 60A, 10V
Power Dissipation (Max): 680W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 670 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 10 V
на замовлення 17 шт:
термін постачання 21-31 дні (днів)
1+3533.29 грн
MMIX1G120N120A3V1 IXYS littelfuse_discrete_igbts_smpd_packages_mmix1g120n120a3v1_datasheet.pdf.pdf Description: IGBT 1200V 220A 400W SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 700 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
Supplier Device Package: 24-SMPD
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/490ns
Switching Energy: 10mJ (on), 33mJ (off)
Test Condition: 960V, 100A, 1Ohm, 15V
Gate Charge: 420 nC
Part Status: Active
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 700 A
Power - Max: 400 W
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MMIX1T600N04T2 MMIX1T600N04T2 IXYS littelfuse_discrete_mosfets_smpd_packages_mmix1t600n04t2_datasheet.pdf.pdf Description: MOSFET N-CH 40V 600A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 24-SMPD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 590 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
1+2738.13 грн
20+ 2343.53 грн
MMIX1X200N60B3 IXYS littelfuse_discrete_igbts_smpd_packages_mmix1x200n60b3_datasheet.pdf.pdf Description: IGBT 600V 223A 625W SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
Supplier Device Package: 24-SMPD
IGBT Type: PT
Td (on/off) @ 25°C: 48ns/160ns
Switching Energy: 2.85mJ (on), 2.9mJ (off)
Test Condition: 360V, 100A, 1Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 223 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 1000 A
Power - Max: 625 W
товар відсутній
MMIX1Y100N120C3H1 IXYS littelfuse_discrete_igbts_smpd_packages_mmix1x200n60b3_datasheet.pdf.pdf Description: IGBT 1200V 92A 400W SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 420 ns
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
Supplier Device Package: 24-SMPD
Td (on/off) @ 25°C: 48ns/123ns
Switching Energy: 6.5mJ (on), 2.9mJ (off)
Test Condition: 600V, 100A, 1Ohm, 15V
Gate Charge: 270 nC
Part Status: Active
Current - Collector (Ic) (Max): 92 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 440 A
Power - Max: 400 W
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
1+3531.73 грн
20+ 3030.64 грн
VUB116-16NOXT VUB116-16NOXT IXYS VUB116-16NOXT.pdf Description: BRIDGE RECT 3P 1.6KV 120A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Three Phase (Braking)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: Module
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 120 A
Voltage - Forward (Vf) (Max) @ If: 2.76 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+6662.36 грн
VUB120-16NOX VUB120-16NOX IXYS VUB116-16NOXT.pdf Description: BRIDGE RECT 3P 1.6KV 180A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Through Hole
Diode Type: Three Phase (Braking)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: Module
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 180 A
Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
товар відсутній
VUB120-16NOXT VUB120-16NOXT IXYS VUB120-16NOX.pdf Description: BRIDGE RECT 3P 1.6KV 180A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Through Hole
Diode Type: Three Phase (Braking)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: Module
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 180 A
Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
товар відсутній
VUB145-16NOXT VUB145-16NOXT IXYS VUB145-16NOXT.pdf Description: BRIDGE RECT 3P 1.6KV 150A E2
товар відсутній
VUB160-16NOX VUB160-16NOX IXYS VUB160-16NOX.pdf Description: BRIDGE RECT 3P 1.6KV 180A V2-PAK
товар відсутній
VUB160-16NOXT VUB160-16NOXT IXYS VUB160-16NOX.pdf Description: BRIDGE RECT 3P 1.6KV 180A V2-PAK
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VUB72-12NOXT VUB72-12NOXT IXYS VUB72-12NOXT.pdf Description: BRIDGE RECT 3P 1.2KV 75A V1A-PAK
Packaging: Box
Package / Case: V1A-PAK
Mounting Type: Chassis Mount
Diode Type: Three Phase (Braking)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: V1A-PAK
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 75 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
на замовлення 22 шт:
термін постачання 21-31 дні (днів)
1+3387.08 грн
10+ 2906.56 грн
VUB72-16NOXT VUB72-16NOXT IXYS VUB72-16NOXT.pdf Description: BRIDGE RECT 3P 1.6KV 75A V1A-PAK
Packaging: Box
Package / Case: V1A-PAK
Mounting Type: Chassis Mount
Diode Type: Three Phase (Braking)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: V1A-PAK
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 75 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 20 µA @ 1600 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
1+3995.38 грн
10+ 3589.53 грн
VUI72-16NOXT IXYS VUI72-16NOXT.pdf Description: DIODE BRIDGE 1600V 75A
на замовлення 63 шт:
термін постачання 21-31 дні (днів)
1+3856.99 грн
10+ 3464.77 грн
VUO120-12NO2T IXYS VUO120-12NO2T.pdf Description: BRIDGE RECT 3P 1.2KV 180A V2-PAK
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VUO120-16NO2T IXYS VUO120-16NO2T.pdf Description: BRIDGE RECT 3P 1.6KV 180A V2-PAK
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VUO162-16NO7 IXYS VUO120-16NO2T.pdf Description: BRIDGE RECT 3P 1.6KV PWS-E-FLAT
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VUO192-16NO7 IXYS VUO192-16NO7.pdf Description: BRIDGE RECT 3P 1.6KV PWS-E-FLAT
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VUO52-22NO1 IXYS VUO52-22NO1.pdf Description: BRIDGE RECT 3P 2.2KV 60A V1A-PAK
Packaging: Box
Package / Case: V1A-PAK
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: V1A-PAK
Voltage - Peak Reverse (Max): 2.2 kV
Current - Average Rectified (Io): 60 A
Voltage - Forward (Vf) (Max) @ If: 1.13 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
товар відсутній
VUO64-16NO7 IXYS VUO64-16NO7.pdf Description: BRIDGE RECT 3P 1.6KV PWS-D-FLAT
Packaging: Box
Package / Case: PWS-D Flat
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: PWS-D-Flat
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 60 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 60 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
товар відсутній
VUO84-16NO7 VUO84-16NO7 IXYS VUO84-16NO7.pdf Description: BRIDGE RECT 3P 1.6KV PWS-D-FLAT
Packaging: Box
Package / Case: PWS-D Flat
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: PWS-D-Flat
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 90 A
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
1+3061.82 грн
10+ 2627.38 грн
VVZB120-16ioX IXYS VVZB120-16ioX.pdf Description: DIODE BRIDGE 1600V 180A
Packaging: Box
Package / Case: V2-PAK
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 700A, 755A
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - Off State: 1.6 kV
товар відсутній
VVZB135-16IOXT IXYS VVZB135-16IOXT.pdf Description: DIODE BRIDGE 1600V 150A
Packaging: Box
Package / Case: E2
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 80 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 700A, 755A
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Voltage - Off State: 1.6 kV
товар відсутній
VVZB170-16ioXT IXYS VVZB170-16IOXT.pdf Description: DIODE BRIDGE 1600V 180A
Packaging: Box
Package / Case: E2
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1100A, 1190A
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Voltage - Off State: 1.6 kV
товар відсутній
VWM270-0075X2 IXYS VWM270-0075X2.pdf Description: MOSFET 6N-CH 75V 270A V2-PAK
товар відсутній
IXBT20N300HV IXBT20N300HV IXYS littelfuse_discrete_igbts_bimosfet_ixbt20n300hv_datasheet.pdf.pdf Description: IGBT 3000V 50A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.35 µs
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 20A
Supplier Device Package: TO-268AA
Gate Charge: 105 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 250 W
товар відсутній
IXYP15N65C3D1M IXYP15N65C3D1M IXYS littelfuse_discrete_igbts_xpt_ixyp15n65c3d1m_datasheet.pdf.pdf Description: IGBT 650V 16A 48W TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/68ns
Switching Energy: 270µJ (on), 230µJ (off)
Test Condition: 400V, 15A, 20Ohm, 15V
Gate Charge: 19 nC
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 48 W
товар відсутній
IXYP20N65C3D1M IXYP20N65C3D1M IXYS littelfuse_discrete_igbts_xpt_ixyp20n65c3d1m_datasheet.pdf.pdf Description: IGBT 650V 18A 50W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/80ns
Switching Energy: 430µJ (on), 350µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 30 nC
Part Status: Active
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 50 W
товар відсутній
IXYT30N65C3H1HV IXYT30N65C3H1HV IXYS DS100545A(IXYT-H30N65C3H1_HV).pdf Description: IGBT 650V 60A 270W TO268HV
товар відсутній
IXYH50N65C3 IXYH50N65C3 IXYS littelfuse_discrete_igbts_xpt_ixy_50n65c3_datasheet.pdf.pdf Description: IGBT 650V 130A 600W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/80ns
Switching Energy: 1.3mJ (on), 370µJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 80 nC
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 600 W
товар відсутній
IXyH100N65C3 IXyH100N65C3 IXYS littelfuse_discrete_igbts_xpt_ixyh100n65c3_datasheet.pdf.pdf Description: IGBT PT 650V 200A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 70A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/106ns
Switching Energy: 2.15mJ (on), 840µJ (off)
Test Condition: 400V, 50A, 3Ohm, 15V
Gate Charge: 164 nC
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 420 A
Power - Max: 830 W
на замовлення 1427 шт:
термін постачання 21-31 дні (днів)
1+671.63 грн
30+ 542.23 грн
MIXA30W1200TMH MIXA30W1200TMH.pdf
Виробник: IXYS
Description: IGBT MOD 1200V 43A MINIPACK2
товар відсутній
MIXA30W1200TML MIXA30W1200TML.pdf
Виробник: IXYS
Description: IGBT MODULE 1200V 43A 150W E1
товар відсутній
MIXA30WB1200TED MIXA30WB1200TED.pdf
Виробник: IXYS
Description: IGBT MODULE 1200V 43A 150W E2
товар відсутній
MIXA40W1200TED MIXA40W1200TED.pdf
Виробник: IXYS
Description: IGBT MODULE 1200V 60A 195W E2
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+5265.15 грн
MIXA40W1200TMH MIXA40W1200TMH.pdf
Виробник: IXYS
Description: IGBT MODULE 1200V 40A
товар відсутній
MIXA40W1200TML MIXA40W1200TML.pdf
Виробник: IXYS
Description: IGBT MODULE 1200V 40A
товар відсутній
MIXA40WB1200TED MIXA40WB1200TED.pdf
MIXA40WB1200TED
Виробник: IXYS
Description: IGBT MODULE 1200V 60A 195W E2
товар відсутній
MIXA450PF1200TSF MIXA450PF1200TSF.pdf
Виробник: IXYS
Description: IGBT MOD 1200V 650A 2100W
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+12151.9 грн
MIXA600PF650TSF MIXA600PF650TSF.pdf
Виробник: IXYS
Description: IGBT MODULE 650V 490A
товар відсутній
MIXA60HU1200VA media?resourcetype=datasheets&itemid=2F78F28E-2571-4338-8456-BDC39156D376&filename=Littelfuse-IGBT-Modules-XPT-Modules-MIXA60HU1200VA-Datasheet.PDF
Виробник: IXYS
Description: IGBT MOD 1200V 85A 290W V1A-PAK
Packaging: Box
Package / Case: V1A-PAK
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 55A
NTC Thermistor: No
Supplier Device Package: V1A-PAK
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 290 W
Current - Collector Cutoff (Max): 500 µA
товар відсутній
MIXA60W1200TED MIXA60W1200TED.pdf
Виробник: IXYS
Description: IGBT MODULE 1200V 60A
товар відсутній
MIXA60WB1200TEH MIXA60WB1200TEH.pdf
Виробник: IXYS
Description: IGBT MODULE 1200V 85A 290W E3
Packaging: Box
Package / Case: E3
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 55A
NTC Thermistor: Yes
Supplier Device Package: E3
IGBT Type: PT
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 290 W
Current - Collector Cutoff (Max): 500 µA
товар відсутній
MIXA61H1200ED MIXA61H1200ED.pdf
Виробник: IXYS
Description: IGBT MODULE 1200V 60A
на замовлення 132 шт:
термін постачання 21-31 дні (днів)
MIXA80R1200VA MIXA80R1200VA.pdf
Виробник: IXYS
Description: IGBT MOD 1200V 120A 390W V1A-PAK
товар відсутній
MIXA80W1200TED MIXA80W1200TED.pdf
Виробник: IXYS
Description: IGBT MODULE 1200V 120A 390W E2
товар відсутній
MIXA80W1200TEH MIXA80W1200TEH.pdf
Виробник: IXYS
Description: IGBT MODULE 1200V 120A 390W E3
товар відсутній
MIXA80WB1200TEH MIXA80WB1200TEH.pdf
Виробник: IXYS
Description: IGBT MODULE 1200V 120A 390W E3
Packaging: Box
Package / Case: E3
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 77A
NTC Thermistor: Yes
Supplier Device Package: E3
IGBT Type: PT
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 390 W
Current - Collector Cutoff (Max): 200 µA
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+8387.96 грн
MIXA81H1200EH MIXA81H1200EH.pdf
Виробник: IXYS
Description: IGBT MODULE 1200V 84A
товар відсутній
MIXA81WB1200TEH MIXA81WB1200TEH.pdf
Виробник: IXYS
Description: IGBT MODULE 1200V 84A
товар відсутній
MKE11R600DCGFC MKE11R600DCGFC.pdf
Виробник: IXYS
Description: MOSFET N-CH 600V 15A I4PAC
товар відсутній
MKE38P600LB SMPD%20MOSFET%20and%20IGBTs_Product%20Brief_01.pdf
Виробник: IXYS
Description: MOSFET N-CH 600V 50A SMPD
товар відсутній
MKE38P600LB-TRR SMPD%20MOSFET%20and%20IGBTs_Product%20Brief_01.pdf
Виробник: IXYS
Description: MOSFET N-CH 600V 50A SMPD
товар відсутній
MKE38RK600DFELB MKE38RK600DFELB.pdf
Виробник: IXYS
Description: MOSFET N-CH 600V 50A SMPD
товар відсутній
MKE38RK600DFELB-TRR MKE38RK600DFELB.pdf
Виробник: IXYS
Description: MOSFET N-CH 600V 50A SMPD
товар відсутній
MMIX1F132N50P3 littelfuse_discrete_mosfets_smpd_packages_mmix1f132n50p3_datasheet.pdf.pdf
Виробник: IXYS
Description: MOSFET N-CH 500V 63A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 66A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V
на замовлення 860 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
300+2427.17 грн
Мінімальне замовлення: 300
MMIX1F160N30T littelfuse_discrete_mosfets_smpd_packages_mmix1f160n30t_datasheet.pdf.pdf
Виробник: IXYS
Description: MOSFET N-CH 300V 102A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 60A, 10V
Power Dissipation (Max): 570W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
товар відсутній
MMIX1F180N25T littelfuse_discrete_mosfets_smpd_packages_mmix1f180n25t_datasheet.pdf.pdf
Виробник: IXYS
Description: MOSFET N-CH 250V 132A 24SMPD
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+3875.75 грн
10+ 3481.86 грн
MMIX1F230N20T littelfuse_discrete_mosfets_smpd_packages_mmix1f230n20t_datasheet.pdf.pdf
Виробник: IXYS
Description: MOSFET N-CH 200V 168A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 168A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 60A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 378 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
товар відсутній
MMIX1F40N110P DS100431(MMIX1F40N110P).pdf
Виробник: IXYS
Description: MOSFET N-CH 1100V 24A SMPD
товар відсутній
MMIX1F420N10T littelfuse_discrete_mosfets_smpd_packages_mmix1f420n10t_datasheet.pdf.pdf
MMIX1F420N10T
Виробник: IXYS
Description: MOSFET N-CH 100V 334A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 334A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 60A, 10V
Power Dissipation (Max): 680W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 670 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 10 V
на замовлення 17 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+3533.29 грн
MMIX1G120N120A3V1 littelfuse_discrete_igbts_smpd_packages_mmix1g120n120a3v1_datasheet.pdf.pdf
Виробник: IXYS
Description: IGBT 1200V 220A 400W SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 700 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
Supplier Device Package: 24-SMPD
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/490ns
Switching Energy: 10mJ (on), 33mJ (off)
Test Condition: 960V, 100A, 1Ohm, 15V
Gate Charge: 420 nC
Part Status: Active
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 700 A
Power - Max: 400 W
товар відсутній
MMIX1T600N04T2 littelfuse_discrete_mosfets_smpd_packages_mmix1t600n04t2_datasheet.pdf.pdf
MMIX1T600N04T2
Виробник: IXYS
Description: MOSFET N-CH 40V 600A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 24-SMPD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 590 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+2738.13 грн
20+ 2343.53 грн
MMIX1X200N60B3 littelfuse_discrete_igbts_smpd_packages_mmix1x200n60b3_datasheet.pdf.pdf
Виробник: IXYS
Description: IGBT 600V 223A 625W SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
Supplier Device Package: 24-SMPD
IGBT Type: PT
Td (on/off) @ 25°C: 48ns/160ns
Switching Energy: 2.85mJ (on), 2.9mJ (off)
Test Condition: 360V, 100A, 1Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 223 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 1000 A
Power - Max: 625 W
товар відсутній
MMIX1Y100N120C3H1 littelfuse_discrete_igbts_smpd_packages_mmix1x200n60b3_datasheet.pdf.pdf
Виробник: IXYS
Description: IGBT 1200V 92A 400W SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 420 ns
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
Supplier Device Package: 24-SMPD
Td (on/off) @ 25°C: 48ns/123ns
Switching Energy: 6.5mJ (on), 2.9mJ (off)
Test Condition: 600V, 100A, 1Ohm, 15V
Gate Charge: 270 nC
Part Status: Active
Current - Collector (Ic) (Max): 92 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 440 A
Power - Max: 400 W
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+3531.73 грн
20+ 3030.64 грн
VUB116-16NOXT VUB116-16NOXT.pdf
VUB116-16NOXT
Виробник: IXYS
Description: BRIDGE RECT 3P 1.6KV 120A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Three Phase (Braking)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: Module
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 120 A
Voltage - Forward (Vf) (Max) @ If: 2.76 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+6662.36 грн
VUB120-16NOX VUB116-16NOXT.pdf
VUB120-16NOX
Виробник: IXYS
Description: BRIDGE RECT 3P 1.6KV 180A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Through Hole
Diode Type: Three Phase (Braking)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: Module
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 180 A
Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
товар відсутній
VUB120-16NOXT VUB120-16NOX.pdf
VUB120-16NOXT
Виробник: IXYS
Description: BRIDGE RECT 3P 1.6KV 180A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Through Hole
Diode Type: Three Phase (Braking)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: Module
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 180 A
Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
товар відсутній
VUB145-16NOXT VUB145-16NOXT.pdf
VUB145-16NOXT
Виробник: IXYS
Description: BRIDGE RECT 3P 1.6KV 150A E2
товар відсутній
VUB160-16NOX VUB160-16NOX.pdf
VUB160-16NOX
Виробник: IXYS
Description: BRIDGE RECT 3P 1.6KV 180A V2-PAK
товар відсутній
VUB160-16NOXT VUB160-16NOX.pdf
VUB160-16NOXT
Виробник: IXYS
Description: BRIDGE RECT 3P 1.6KV 180A V2-PAK
товар відсутній
VUB72-12NOXT VUB72-12NOXT.pdf
VUB72-12NOXT
Виробник: IXYS
Description: BRIDGE RECT 3P 1.2KV 75A V1A-PAK
Packaging: Box
Package / Case: V1A-PAK
Mounting Type: Chassis Mount
Diode Type: Three Phase (Braking)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: V1A-PAK
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 75 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
на замовлення 22 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+3387.08 грн
10+ 2906.56 грн
VUB72-16NOXT VUB72-16NOXT.pdf
VUB72-16NOXT
Виробник: IXYS
Description: BRIDGE RECT 3P 1.6KV 75A V1A-PAK
Packaging: Box
Package / Case: V1A-PAK
Mounting Type: Chassis Mount
Diode Type: Three Phase (Braking)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: V1A-PAK
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 75 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 20 µA @ 1600 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+3995.38 грн
10+ 3589.53 грн
VUI72-16NOXT VUI72-16NOXT.pdf
Виробник: IXYS
Description: DIODE BRIDGE 1600V 75A
на замовлення 63 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+3856.99 грн
10+ 3464.77 грн
VUO120-12NO2T VUO120-12NO2T.pdf
Виробник: IXYS
Description: BRIDGE RECT 3P 1.2KV 180A V2-PAK
товар відсутній
VUO120-16NO2T VUO120-16NO2T.pdf
Виробник: IXYS
Description: BRIDGE RECT 3P 1.6KV 180A V2-PAK
товар відсутній
VUO162-16NO7 VUO120-16NO2T.pdf
Виробник: IXYS
Description: BRIDGE RECT 3P 1.6KV PWS-E-FLAT
товар відсутній
VUO192-16NO7 VUO192-16NO7.pdf
Виробник: IXYS
Description: BRIDGE RECT 3P 1.6KV PWS-E-FLAT
товар відсутній
VUO52-22NO1 VUO52-22NO1.pdf
Виробник: IXYS
Description: BRIDGE RECT 3P 2.2KV 60A V1A-PAK
Packaging: Box
Package / Case: V1A-PAK
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: V1A-PAK
Voltage - Peak Reverse (Max): 2.2 kV
Current - Average Rectified (Io): 60 A
Voltage - Forward (Vf) (Max) @ If: 1.13 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
товар відсутній
VUO64-16NO7 VUO64-16NO7.pdf
Виробник: IXYS
Description: BRIDGE RECT 3P 1.6KV PWS-D-FLAT
Packaging: Box
Package / Case: PWS-D Flat
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: PWS-D-Flat
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 60 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 60 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
товар відсутній
VUO84-16NO7 VUO84-16NO7.pdf
VUO84-16NO7
Виробник: IXYS
Description: BRIDGE RECT 3P 1.6KV PWS-D-FLAT
Packaging: Box
Package / Case: PWS-D Flat
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: PWS-D-Flat
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 90 A
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+3061.82 грн
10+ 2627.38 грн
VVZB120-16ioX VVZB120-16ioX.pdf
Виробник: IXYS
Description: DIODE BRIDGE 1600V 180A
Packaging: Box
Package / Case: V2-PAK
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 700A, 755A
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - Off State: 1.6 kV
товар відсутній
VVZB135-16IOXT VVZB135-16IOXT.pdf
Виробник: IXYS
Description: DIODE BRIDGE 1600V 150A
Packaging: Box
Package / Case: E2
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 80 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 700A, 755A
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Voltage - Off State: 1.6 kV
товар відсутній
VVZB170-16ioXT VVZB170-16IOXT.pdf
Виробник: IXYS
Description: DIODE BRIDGE 1600V 180A
Packaging: Box
Package / Case: E2
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1100A, 1190A
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Voltage - Off State: 1.6 kV
товар відсутній
VWM270-0075X2 VWM270-0075X2.pdf
Виробник: IXYS
Description: MOSFET 6N-CH 75V 270A V2-PAK
товар відсутній
IXBT20N300HV littelfuse_discrete_igbts_bimosfet_ixbt20n300hv_datasheet.pdf.pdf
IXBT20N300HV
Виробник: IXYS
Description: IGBT 3000V 50A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.35 µs
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 20A
Supplier Device Package: TO-268AA
Gate Charge: 105 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 250 W
товар відсутній
IXYP15N65C3D1M littelfuse_discrete_igbts_xpt_ixyp15n65c3d1m_datasheet.pdf.pdf
IXYP15N65C3D1M
Виробник: IXYS
Description: IGBT 650V 16A 48W TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/68ns
Switching Energy: 270µJ (on), 230µJ (off)
Test Condition: 400V, 15A, 20Ohm, 15V
Gate Charge: 19 nC
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 48 W
товар відсутній
IXYP20N65C3D1M littelfuse_discrete_igbts_xpt_ixyp20n65c3d1m_datasheet.pdf.pdf
IXYP20N65C3D1M
Виробник: IXYS
Description: IGBT 650V 18A 50W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/80ns
Switching Energy: 430µJ (on), 350µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 30 nC
Part Status: Active
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 50 W
товар відсутній
IXYT30N65C3H1HV DS100545A(IXYT-H30N65C3H1_HV).pdf
IXYT30N65C3H1HV
Виробник: IXYS
Description: IGBT 650V 60A 270W TO268HV
товар відсутній
IXYH50N65C3 littelfuse_discrete_igbts_xpt_ixy_50n65c3_datasheet.pdf.pdf
IXYH50N65C3
Виробник: IXYS
Description: IGBT 650V 130A 600W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/80ns
Switching Energy: 1.3mJ (on), 370µJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 80 nC
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 600 W
товар відсутній
IXyH100N65C3 littelfuse_discrete_igbts_xpt_ixyh100n65c3_datasheet.pdf.pdf
IXyH100N65C3
Виробник: IXYS
Description: IGBT PT 650V 200A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 70A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/106ns
Switching Energy: 2.15mJ (on), 840µJ (off)
Test Condition: 400V, 50A, 3Ohm, 15V
Gate Charge: 164 nC
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 420 A
Power - Max: 830 W
на замовлення 1427 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+671.63 грн
30+ 542.23 грн
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