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GMM3X160-0055X2-SMD IXYS GMM3X160-0055X2-SMDSAM.pdf Description: MOSFET 6N-CH 55V 150A 24SMD
Packaging: Tube
Package / Case: 24-SMD, Gull Wing
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 150A
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 24-SMD
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GMM3X160-0055X2-SMDSAM IXYS GMM3X160-0055X2-SMDSAM.pdf Description: MOSFET 6N-CH 55V 150A 24SMD
Packaging: Tube
Package / Case: 24-SMD, Gull Wing
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 150A
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 24-SMD
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GMM3X180-004X2-SMD IXYS GMM%203x180-004X2.pdf Description: MOSFET 6N-CH 40V 180A 24SMD
Packaging: Tube
Package / Case: 24-SMD, Gull Wing
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 180A
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: 24-SMD
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GMM3X180-004X2-SMDSAM IXYS GMM3x180-004X2.pdf Description: MOSFET 6N-CH 40V 180A 24SMD
Packaging: Tube
Package / Case: 24-SMD, Gull Wing
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 180A
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: 24-SMD
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GMM3x60-015X2-SMD IXYS Littelfuse-Power-Semiconductors-GMM3x60-015X2-Datasheet?assetguid=6be8466a-6b8d-456f-b670-6c5529d92fdf Description: MOSFET 6N-CH 150V 50A ISOPLUS
Packaging: Tube
Package / Case: ISOPLUS-DIL™
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 50A
Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V
Rds On (Max) @ Id, Vgs: 24mOhm @ 38A, 10V
Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: ISOPLUS-DIL™
Part Status: Obsolete
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GMM3x60-015X2-SMDSAM IXYS Description: MOSFET 6N-CH 150V 50A ISOPLUS
Packaging: Tube
Package / Case: ISOPLUS-DIL™
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 50A
Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V
Rds On (Max) @ Id, Vgs: 24mOhm @ 38A, 10V
Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: ISOPLUS-DIL™
Part Status: Active
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GUO40-08NO1 GUO40-08NO1 IXYS GUO40-08NO1.pdf Description: BRIDGE RECT 3PHASE 800V 40A GUFP
Packaging: Tube
Package / Case: 5-SIP
Mounting Type: Through Hole
Diode Type: Three Phase
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: GUFP
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 800 V
на замовлення 105 шт:
термін постачання 21-31 дні (днів)
1+1567.14 грн
10+1341.53 грн
100+1173.31 грн
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GWM180-004X2-SL IXYS GWM180-004X2.pdf Description: MOSFET 6N-CH 40V 180A 17-SMD
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GWM180-004X2-SLSAM IXYS Description: MOSFET 6N-CH 40V 180A ISOPLUS
Packaging: Tube
Package / Case: 17-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 180A
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: ISOPLUS-DIL™
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GWM180-004X2-SMD IXYS GWM180-004X2.pdf Description: MOSFET 6N-CH 40V 180A 17-SMD
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GWM180-004X2-SMDSAM IXYS Description: MOSFET 6N-CH 40V 180A 17-SMD
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IXA12IF1200HB IXA12IF1200HB IXYS littelfuse_discrete_igbts_xpt_ixa12if1200hb_datasheet.pdf.pdf Description: IGBT 1200V 20A 85W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
Supplier Device Package: TO-247AD
IGBT Type: PT
Switching Energy: 1.1mJ (on), 1.1mJ (off)
Test Condition: 600V, 10A, 100Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 85 W
на замовлення 438 шт:
термін постачання 21-31 дні (днів)
1+392.83 грн
30+300.02 грн
120+257.16 грн
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IXA12IF1200PB IXA12IF1200PB IXYS littelfuse_discrete_igbts_xpt_ixa12if1200pb_datasheet.pdf.pdf Description: IGBT PT 1200V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
Supplier Device Package: TO-220-3
IGBT Type: PT
Switching Energy: 1.1mJ (on), 1.1mJ (off)
Test Condition: 600V, 10A, 100Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 85 W
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IXA12IF1200TC-TUB IXA12IF1200TC-TUB IXYS littelfuse_discrete_igbts_xpt_ixa12if1200tc_datasheet.pdf.pdf Description: IGBT PT 1200V 20A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
Supplier Device Package: TO-268AA
IGBT Type: PT
Switching Energy: 1.1mJ (on), 1.1mJ (off)
Test Condition: 600V, 10A, 100Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 85 W
на замовлення 1560 шт:
термін постачання 21-31 дні (днів)
300+336.12 грн
Мінімальне замовлення: 300
В кошику  од. на суму  грн.
IXA17IF1200HJ IXA17IF1200HJ IXYS littelfuse_discrete_igbts_xpt_ixa17if1200hj_datasheet.pdf.pdf Description: IGBT 1200V 28A 100W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Switching Energy: 1.55mJ (on), 1.7mJ (off)
Test Condition: 600V, 15A, 56Ohm, 15V
Gate Charge: 47 nC
Part Status: Active
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 100 W
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IXA20I1200PB IXA20I1200PB IXYS littelfuse_discrete_igbts_xpt_ixa20i1200pb_datasheet.pdf.pdf Description: IGBT PT 1200V 38A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: TO-220-3
IGBT Type: PT
Switching Energy: 1.65mJ (on), 1.7mJ (off)
Test Condition: 600V, 15A, 56Ohm, 15V
Gate Charge: 47 nC
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 165 W
на замовлення 109 шт:
термін постачання 21-31 дні (днів)
1+724.65 грн
50+385.32 грн
100+355.17 грн
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IXA20IF1200HB IXA20IF1200HB IXYS littelfuse_discrete_igbts_xpt_ixa20if1200hb_datasheet.pdf.pdf Description: IGBT 1200V 38A 165W TO247
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IXA20PG1200DHG-TUB IXYS littelfuse_discrete_igbts_smpd_packages_ixa20pg1200dhglb_datasheet.pdf.pdf Description: IGBT H BRIDGE 1200V 32A SMPD
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IXA20PG1200DHG-TRR IXYS littelfuse_discrete_igbts_smpd_packages_ixa20pg1200dhglb_datasheet.pdf.pdf Description: IGBT H BRIDGE 1200V 32A SMPD
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IXA20RG1200DHGLB IXYS IXA20RG1200DHGLB.pdf Description: IGBT 1200V 32A 125W SMPD
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IXA20RG1200DHGLB-TRR IXYS IXA20RG1200DHGLB.pdf Description: IGBT 1200V 32A 125W SMPD
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IXA30PG1200DHG-TUB IXYS littelfuse_discrete_igbts_smpd_packages_ixa30pg1200dhglb_datasheet.pdf.pdf Description: IGBT H BRIDGE 1200V 43A SMPD
Packaging: Bulk
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
NTC Thermistor: No
Supplier Device Package: ISOPLUS-SMPD™.B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 43 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 150 W
Current - Collector Cutoff (Max): 2.1 mA
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IXA30PG1200DHG-TRR IXYS littelfuse_discrete_igbts_smpd_packages_ixa30pg1200dhglb_datasheet.pdf.pdf Description: IGBT H BRIDGE 1200V 43A SMPD
Packaging: Tape & Reel (TR)
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
NTC Thermistor: No
Supplier Device Package: ISOPLUS-SMPD™.B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 43 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 150 W
Current - Collector Cutoff (Max): 2.1 mA
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IXA30RG1200DHGLB IXYS IXA30RG1200DHGLB.pdf Description: IGBT PHASELEG 1200V 30A SMPD
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IXA30RG1200DHGLB-TRR IXYS IXA30RG1200DHGLB.pdf Description: IGBT PHASELEG 1200V 43A SMPD
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IXA33IF1200HB IXA33IF1200HB IXYS littelfuse_discrete_igbts_xpt_ixa33if1200hb_datasheet.pdf.pdf Description: IGBT 1200V 58A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-247AD
IGBT Type: PT
Switching Energy: 2.5mJ (on), 3mJ (off)
Test Condition: 600V, 25A, 39Ohm, 15V
Gate Charge: 76 nC
Part Status: Active
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 250 W
на замовлення 626 шт:
термін постачання 21-31 дні (днів)
1+678.68 грн
30+547.97 грн
В кошику  од. на суму  грн.
IXA37IF1200HJ IXA37IF1200HJ IXYS littelfuse_discrete_igbts_xpt_ixa37if1200hj_datasheet.pdf.pdf Description: IGBT 1200V 58A 195W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Switching Energy: 3.8mJ (on), 4.1mJ (off)
Test Condition: 600V, 35A, 27Ohm, 15V
Gate Charge: 106 nC
Part Status: Active
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 195 W
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IXA40PF1200TDHGLB IXYS Description: IGBT PHASELEG 1200V 40A SMPD
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IXA40PF1200TDHGLB-TRR IXYS Description: IGBT PHASELEG 1200V 40A SMPD
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IXA40PG1200DHG-TUB IXYS IXA40PG1200DHGLB.pdf Description: IGBT H BRIDGE 1200V 63A SMPD
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IXA40PG1200DHG-TRR IXYS IXA40PG1200DHGLB.pdf Description: IGBT H BRIDGE 1200V 63A SMPD
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IXA40RG1200DHG-TUB IXYS IXA40PG1200DHGLB.pdf Description: IGBT H BRIDGE 1200V 63A SMPD
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
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IXA40RG1200DHG-TRR IXYS IXA40PG1200DHGLB.pdf Description: IGBT H BRIDGE 1200V 63A SMPD
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IXA45IF1200HB IXA45IF1200HB IXYS littelfuse_discrete_igbts_xpt_ixa45if1200hb_datasheet.pdf.pdf Description: IGBT 1200V 78A 325W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
Supplier Device Package: TO-247AD
IGBT Type: PT
Switching Energy: 3.8mJ (on), 4.1mJ (off)
Test Condition: 600V, 35A, 27Ohm, 15V
Gate Charge: 106 nC
Part Status: Active
Current - Collector (Ic) (Max): 78 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 325 W
на замовлення 172 шт:
термін постачання 21-31 дні (днів)
1+947.81 грн
10+782.40 грн
100+651.99 грн
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IXA4I1200UC IXA4I1200UC IXYS IXA4I1200UC.pdf Description: IGBT 1200V 9A 45W TO252AA
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IXA4IF1200TC-TUB IXA4IF1200TC-TUB IXYS littelfuse_discrete_igbts_xpt_ixa4if1200tc_datasheet.pdf.pdf Description: IGBT 1200V 9A 45W TO252AA
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A
Supplier Device Package: TO-268AA
IGBT Type: PT
Switching Energy: 400µJ (on), 300µJ (off)
Test Condition: 600V, 3A, 330Ohm, 15V
Gate Charge: 12 nC
Current - Collector (Ic) (Max): 9 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 45 W
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IXA4IF1200UC IXA4IF1200UC IXYS IXA4IF1200UC.pdf Description: IGBT 1200V 9A 45W TO252AA
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IXA55I1200HJ IXA55I1200HJ IXYS littelfuse_discrete_igbts_xpt_ixa55i1200hj_datasheet.pdf.pdf Description: IGBT PT 1200V 84A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Switching Energy: 4.5mJ (on), 5.5mJ (off)
Test Condition: 600V, 50A, 15Ohm, 15V
Gate Charge: 190 nC
Part Status: Active
Current - Collector (Ic) (Max): 84 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 290 W
на замовлення 180 шт:
термін постачання 21-31 дні (днів)
1+1176.82 грн
30+1033.67 грн
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IXA60IF1200NA IXA60IF1200NA IXYS littelfuse_discrete_igbts_xpt_ixa60if1200na_datasheet.pdf.pdf Description: IGBT MOD 1200V 88A 290W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Current - Collector (Ic) (Max): 88 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 290 W
Current - Collector Cutoff (Max): 100 µA
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
1+3453.56 грн
10+2493.27 грн
В кошику  од. на суму  грн.
IXA70I1200NA IXA70I1200NA IXYS IXA70I1200NA.pdf Description: IGBT MODULE 1200V 100A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 100 µA
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IXA90IF650NA IXYS Description: IGBT 650V 90A SOT-227B
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IXFA16N50P3 IXFA16N50P3 IXYS DS100456B(IXFA-FP-FH16N50P3).pdf Description: MOSFET N-CH 500V 16A TO-263AA
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IXFA16N60P3 IXFA16N60P3 IXYS media?resourcetype=datasheets&itemid=CF4AB893-9810-4DEC-B1F0-79C39F033EC6&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-16N60P3-Datasheet.PDF Description: MOSFET N-CH 600V 16A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 8A, 10V
Power Dissipation (Max): 347W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
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IXFA26N50P3 IXFA26N50P3 IXYS media?resourcetype=datasheets&itemid=A8B0D040-1523-4949-9CF7-D162B9EED257&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-26N50P3-Datasheet.PDF Description: MOSFET N-CH 500V 26A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 25 V
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IXFA5N50P3 IXFA5N50P3 IXYS DS100454B(IXFY-FA-FP5N50P3).pdf Description: MOSFET N-CH 500V 5A TO263
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IXFA7N60P3 IXFA7N60P3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_7n60p3_datasheet.pdf.pdf Description: MOSFET N-CH 600V 7A TO263
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IXFA8N50P3 IXFA8N50P3 IXYS DS100455A(IXFA-FP8N50P3).pdf Description: MOSFET N-CH 500V 8A TO-263AA
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IXFH150N17T2 IXFH150N17T2 IXYS DS100229IXFHT150N17T2.pdf Description: MOSFET N-CH 175V 150A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 75A, 10V
Power Dissipation (Max): 880W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 175 V
Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14600 pF @ 25 V
на замовлення 17 шт:
термін постачання 21-31 дні (днів)
1+788.17 грн
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IXFH16N50P3 IXFH16N50P3 IXYS littelfuse-discrete-mosfets-ixf-16n50p3-datasheet?assetguid=c099d5ad-4c9c-4f25-857b-cb83c46942eb Description: MOSFET N-CH 500V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 8A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 25 V
на замовлення 168 шт:
термін постачання 21-31 дні (днів)
1+550.80 грн
30+306.78 грн
120+257.61 грн
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IXFH34N50P3 IXFH34N50P3 IXYS DS100411CIXFQFH34N50P3.pdf Description: MOSFET N-CH 500V 34A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 17A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3260 pF @ 25 V
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IXFK120N30P3 IXFK120N30P3 IXYS littelfuse-discrete-mosfets-ixf-120n30p3-datasheet?assetguid=2c3cbe34-d269-4b27-ab84-6ad8c5b0800e Description: MOSFET N-CH 300V 120A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 60A, 10V
Power Dissipation (Max): 1130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8630 pF @ 25 V
на замовлення 67 шт:
термін постачання 21-31 дні (днів)
1+1364.88 грн
25+838.98 грн
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IXFL210N30P3 IXFL210N30P3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfl210n30p3_datasheet.pdf.pdf Description: MOSFET N-CH 300V 108A ISOPLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 105A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: ISOPLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 268 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16200 pF @ 25 V
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IXFN210N30P3 IXFN210N30P3 IXYS littelfuse-discrete-mosfets-ixfn210n30p3-datasheet?assetguid=ea95238f-f12e-4f01-a0cb-121dd942c6bc Description: MOSFET N-CH 300V 192A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 192A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 105A, 10V
Power Dissipation (Max): 1500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 268 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16200 pF @ 25 V
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IXFP16N50P3 IXFP16N50P3 IXYS littelfuse-discrete-mosfets-ixf-16n50p3-datasheet?assetguid=c099d5ad-4c9c-4f25-857b-cb83c46942eb Description: MOSFET N-CH 500V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 8A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 25 V
на замовлення 950 шт:
термін постачання 21-31 дні (днів)
1+452.17 грн
50+230.88 грн
100+211.15 грн
500+165.72 грн
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IXFP5N50P3 IXFP5N50P3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_5n50p3_datasheet.pdf.pdf Description: MOSFET N-CH 500V 5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.65Ohm @ 2.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
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IXFP8N50P3 IXFP8N50P3 IXYS DS100455B(IXFA-FP8N50P3).pdf Description: MOSFET N-CH 500V 8A TO-220
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IXFQ26N50P3 IXFQ26N50P3 IXYS 171448825littelfusediscretemosfetsnchannelhiperfetsix.pdf Description: MOSFET N-CH 500V 26A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 25 V
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IXFQ34N50P3 IXFQ34N50P3 IXYS Description: MOSFET N-CH 500V 34A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 17A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3260 pF @ 25 V
на замовлення 272 шт:
термін постачання 21-31 дні (днів)
1+696.23 грн
30+394.40 грн
120+333.96 грн
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IXFQ50N50P3 IXFQ50N50P3 IXYS littelfuse-discrete-mosfets-ixf-50n50p3-datasheet?assetguid=9f18c4f6-a40a-4871-ba8b-9eaf25daedcd Description: MOSFET N-CH 500V 50A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 25A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4335 pF @ 25 V
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IXFQ94N30P3 IXFQ94N30P3 IXYS Description: MOSFET N-CH 300V 94A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 47A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5510 pF @ 25 V
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
1+924.40 грн
30+574.48 грн
120+516.57 грн
510+475.80 грн
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GMM3X160-0055X2-SMD GMM3X160-0055X2-SMDSAM.pdf
Виробник: IXYS
Description: MOSFET 6N-CH 55V 150A 24SMD
Packaging: Tube
Package / Case: 24-SMD, Gull Wing
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 150A
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 24-SMD
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GMM3X160-0055X2-SMDSAM GMM3X160-0055X2-SMDSAM.pdf
Виробник: IXYS
Description: MOSFET 6N-CH 55V 150A 24SMD
Packaging: Tube
Package / Case: 24-SMD, Gull Wing
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 150A
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 24-SMD
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GMM3X180-004X2-SMD GMM%203x180-004X2.pdf
Виробник: IXYS
Description: MOSFET 6N-CH 40V 180A 24SMD
Packaging: Tube
Package / Case: 24-SMD, Gull Wing
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 180A
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: 24-SMD
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GMM3X180-004X2-SMDSAM GMM3x180-004X2.pdf
Виробник: IXYS
Description: MOSFET 6N-CH 40V 180A 24SMD
Packaging: Tube
Package / Case: 24-SMD, Gull Wing
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 180A
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: 24-SMD
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GMM3x60-015X2-SMD Littelfuse-Power-Semiconductors-GMM3x60-015X2-Datasheet?assetguid=6be8466a-6b8d-456f-b670-6c5529d92fdf
Виробник: IXYS
Description: MOSFET 6N-CH 150V 50A ISOPLUS
Packaging: Tube
Package / Case: ISOPLUS-DIL™
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 50A
Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V
Rds On (Max) @ Id, Vgs: 24mOhm @ 38A, 10V
Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: ISOPLUS-DIL™
Part Status: Obsolete
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GMM3x60-015X2-SMDSAM
Виробник: IXYS
Description: MOSFET 6N-CH 150V 50A ISOPLUS
Packaging: Tube
Package / Case: ISOPLUS-DIL™
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 50A
Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V
Rds On (Max) @ Id, Vgs: 24mOhm @ 38A, 10V
Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: ISOPLUS-DIL™
Part Status: Active
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GUO40-08NO1 GUO40-08NO1.pdf
GUO40-08NO1
Виробник: IXYS
Description: BRIDGE RECT 3PHASE 800V 40A GUFP
Packaging: Tube
Package / Case: 5-SIP
Mounting Type: Through Hole
Diode Type: Three Phase
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: GUFP
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 800 V
на замовлення 105 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1567.14 грн
10+1341.53 грн
100+1173.31 грн
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GWM180-004X2-SL GWM180-004X2.pdf
Виробник: IXYS
Description: MOSFET 6N-CH 40V 180A 17-SMD
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GWM180-004X2-SLSAM
Виробник: IXYS
Description: MOSFET 6N-CH 40V 180A ISOPLUS
Packaging: Tube
Package / Case: 17-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 180A
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: ISOPLUS-DIL™
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GWM180-004X2-SMD GWM180-004X2.pdf
Виробник: IXYS
Description: MOSFET 6N-CH 40V 180A 17-SMD
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GWM180-004X2-SMDSAM
Виробник: IXYS
Description: MOSFET 6N-CH 40V 180A 17-SMD
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IXA12IF1200HB littelfuse_discrete_igbts_xpt_ixa12if1200hb_datasheet.pdf.pdf
IXA12IF1200HB
Виробник: IXYS
Description: IGBT 1200V 20A 85W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
Supplier Device Package: TO-247AD
IGBT Type: PT
Switching Energy: 1.1mJ (on), 1.1mJ (off)
Test Condition: 600V, 10A, 100Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 85 W
на замовлення 438 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+392.83 грн
30+300.02 грн
120+257.16 грн
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IXA12IF1200PB littelfuse_discrete_igbts_xpt_ixa12if1200pb_datasheet.pdf.pdf
IXA12IF1200PB
Виробник: IXYS
Description: IGBT PT 1200V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
Supplier Device Package: TO-220-3
IGBT Type: PT
Switching Energy: 1.1mJ (on), 1.1mJ (off)
Test Condition: 600V, 10A, 100Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 85 W
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IXA12IF1200TC-TUB littelfuse_discrete_igbts_xpt_ixa12if1200tc_datasheet.pdf.pdf
IXA12IF1200TC-TUB
Виробник: IXYS
Description: IGBT PT 1200V 20A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
Supplier Device Package: TO-268AA
IGBT Type: PT
Switching Energy: 1.1mJ (on), 1.1mJ (off)
Test Condition: 600V, 10A, 100Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 85 W
на замовлення 1560 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
300+336.12 грн
Мінімальне замовлення: 300
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IXA17IF1200HJ littelfuse_discrete_igbts_xpt_ixa17if1200hj_datasheet.pdf.pdf
IXA17IF1200HJ
Виробник: IXYS
Description: IGBT 1200V 28A 100W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Switching Energy: 1.55mJ (on), 1.7mJ (off)
Test Condition: 600V, 15A, 56Ohm, 15V
Gate Charge: 47 nC
Part Status: Active
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 100 W
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IXA20I1200PB littelfuse_discrete_igbts_xpt_ixa20i1200pb_datasheet.pdf.pdf
IXA20I1200PB
Виробник: IXYS
Description: IGBT PT 1200V 38A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: TO-220-3
IGBT Type: PT
Switching Energy: 1.65mJ (on), 1.7mJ (off)
Test Condition: 600V, 15A, 56Ohm, 15V
Gate Charge: 47 nC
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 165 W
на замовлення 109 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+724.65 грн
50+385.32 грн
100+355.17 грн
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IXA20IF1200HB littelfuse_discrete_igbts_xpt_ixa20if1200hb_datasheet.pdf.pdf
IXA20IF1200HB
Виробник: IXYS
Description: IGBT 1200V 38A 165W TO247
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IXA20PG1200DHG-TUB littelfuse_discrete_igbts_smpd_packages_ixa20pg1200dhglb_datasheet.pdf.pdf
Виробник: IXYS
Description: IGBT H BRIDGE 1200V 32A SMPD
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IXA20PG1200DHG-TRR littelfuse_discrete_igbts_smpd_packages_ixa20pg1200dhglb_datasheet.pdf.pdf
Виробник: IXYS
Description: IGBT H BRIDGE 1200V 32A SMPD
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IXA20RG1200DHGLB IXA20RG1200DHGLB.pdf
Виробник: IXYS
Description: IGBT 1200V 32A 125W SMPD
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IXA20RG1200DHGLB-TRR IXA20RG1200DHGLB.pdf
Виробник: IXYS
Description: IGBT 1200V 32A 125W SMPD
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IXA30PG1200DHG-TUB littelfuse_discrete_igbts_smpd_packages_ixa30pg1200dhglb_datasheet.pdf.pdf
Виробник: IXYS
Description: IGBT H BRIDGE 1200V 43A SMPD
Packaging: Bulk
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
NTC Thermistor: No
Supplier Device Package: ISOPLUS-SMPD™.B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 43 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 150 W
Current - Collector Cutoff (Max): 2.1 mA
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IXA30PG1200DHG-TRR littelfuse_discrete_igbts_smpd_packages_ixa30pg1200dhglb_datasheet.pdf.pdf
Виробник: IXYS
Description: IGBT H BRIDGE 1200V 43A SMPD
Packaging: Tape & Reel (TR)
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
NTC Thermistor: No
Supplier Device Package: ISOPLUS-SMPD™.B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 43 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 150 W
Current - Collector Cutoff (Max): 2.1 mA
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IXA30RG1200DHGLB IXA30RG1200DHGLB.pdf
Виробник: IXYS
Description: IGBT PHASELEG 1200V 30A SMPD
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IXA30RG1200DHGLB-TRR IXA30RG1200DHGLB.pdf
Виробник: IXYS
Description: IGBT PHASELEG 1200V 43A SMPD
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IXA33IF1200HB littelfuse_discrete_igbts_xpt_ixa33if1200hb_datasheet.pdf.pdf
IXA33IF1200HB
Виробник: IXYS
Description: IGBT 1200V 58A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-247AD
IGBT Type: PT
Switching Energy: 2.5mJ (on), 3mJ (off)
Test Condition: 600V, 25A, 39Ohm, 15V
Gate Charge: 76 nC
Part Status: Active
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 250 W
на замовлення 626 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+678.68 грн
30+547.97 грн
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IXA37IF1200HJ littelfuse_discrete_igbts_xpt_ixa37if1200hj_datasheet.pdf.pdf
IXA37IF1200HJ
Виробник: IXYS
Description: IGBT 1200V 58A 195W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Switching Energy: 3.8mJ (on), 4.1mJ (off)
Test Condition: 600V, 35A, 27Ohm, 15V
Gate Charge: 106 nC
Part Status: Active
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 195 W
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IXA40PF1200TDHGLB
Виробник: IXYS
Description: IGBT PHASELEG 1200V 40A SMPD
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IXA40PF1200TDHGLB-TRR
Виробник: IXYS
Description: IGBT PHASELEG 1200V 40A SMPD
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IXA40PG1200DHG-TUB IXA40PG1200DHGLB.pdf
Виробник: IXYS
Description: IGBT H BRIDGE 1200V 63A SMPD
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IXA40PG1200DHG-TRR IXA40PG1200DHGLB.pdf
Виробник: IXYS
Description: IGBT H BRIDGE 1200V 63A SMPD
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IXA40RG1200DHG-TUB IXA40PG1200DHGLB.pdf
Виробник: IXYS
Description: IGBT H BRIDGE 1200V 63A SMPD
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
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IXA40RG1200DHG-TRR IXA40PG1200DHGLB.pdf
Виробник: IXYS
Description: IGBT H BRIDGE 1200V 63A SMPD
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IXA45IF1200HB littelfuse_discrete_igbts_xpt_ixa45if1200hb_datasheet.pdf.pdf
IXA45IF1200HB
Виробник: IXYS
Description: IGBT 1200V 78A 325W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
Supplier Device Package: TO-247AD
IGBT Type: PT
Switching Energy: 3.8mJ (on), 4.1mJ (off)
Test Condition: 600V, 35A, 27Ohm, 15V
Gate Charge: 106 nC
Part Status: Active
Current - Collector (Ic) (Max): 78 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 325 W
на замовлення 172 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+947.81 грн
10+782.40 грн
100+651.99 грн
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IXA4I1200UC IXA4I1200UC.pdf
IXA4I1200UC
Виробник: IXYS
Description: IGBT 1200V 9A 45W TO252AA
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IXA4IF1200TC-TUB littelfuse_discrete_igbts_xpt_ixa4if1200tc_datasheet.pdf.pdf
IXA4IF1200TC-TUB
Виробник: IXYS
Description: IGBT 1200V 9A 45W TO252AA
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A
Supplier Device Package: TO-268AA
IGBT Type: PT
Switching Energy: 400µJ (on), 300µJ (off)
Test Condition: 600V, 3A, 330Ohm, 15V
Gate Charge: 12 nC
Current - Collector (Ic) (Max): 9 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 45 W
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IXA4IF1200UC IXA4IF1200UC.pdf
IXA4IF1200UC
Виробник: IXYS
Description: IGBT 1200V 9A 45W TO252AA
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IXA55I1200HJ littelfuse_discrete_igbts_xpt_ixa55i1200hj_datasheet.pdf.pdf
IXA55I1200HJ
Виробник: IXYS
Description: IGBT PT 1200V 84A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Switching Energy: 4.5mJ (on), 5.5mJ (off)
Test Condition: 600V, 50A, 15Ohm, 15V
Gate Charge: 190 nC
Part Status: Active
Current - Collector (Ic) (Max): 84 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 290 W
на замовлення 180 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1176.82 грн
30+1033.67 грн
В кошику  од. на суму  грн.
IXA60IF1200NA littelfuse_discrete_igbts_xpt_ixa60if1200na_datasheet.pdf.pdf
IXA60IF1200NA
Виробник: IXYS
Description: IGBT MOD 1200V 88A 290W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Current - Collector (Ic) (Max): 88 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 290 W
Current - Collector Cutoff (Max): 100 µA
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3453.56 грн
10+2493.27 грн
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IXA70I1200NA IXA70I1200NA.pdf
IXA70I1200NA
Виробник: IXYS
Description: IGBT MODULE 1200V 100A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 100 µA
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IXA90IF650NA
Виробник: IXYS
Description: IGBT 650V 90A SOT-227B
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IXFA16N50P3 DS100456B(IXFA-FP-FH16N50P3).pdf
IXFA16N50P3
Виробник: IXYS
Description: MOSFET N-CH 500V 16A TO-263AA
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IXFA16N60P3 media?resourcetype=datasheets&itemid=CF4AB893-9810-4DEC-B1F0-79C39F033EC6&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-16N60P3-Datasheet.PDF
IXFA16N60P3
Виробник: IXYS
Description: MOSFET N-CH 600V 16A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 8A, 10V
Power Dissipation (Max): 347W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
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IXFA26N50P3 media?resourcetype=datasheets&itemid=A8B0D040-1523-4949-9CF7-D162B9EED257&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-26N50P3-Datasheet.PDF
IXFA26N50P3
Виробник: IXYS
Description: MOSFET N-CH 500V 26A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 25 V
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IXFA5N50P3 DS100454B(IXFY-FA-FP5N50P3).pdf
IXFA5N50P3
Виробник: IXYS
Description: MOSFET N-CH 500V 5A TO263
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IXFA7N60P3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_7n60p3_datasheet.pdf.pdf
IXFA7N60P3
Виробник: IXYS
Description: MOSFET N-CH 600V 7A TO263
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IXFA8N50P3 DS100455A(IXFA-FP8N50P3).pdf
IXFA8N50P3
Виробник: IXYS
Description: MOSFET N-CH 500V 8A TO-263AA
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IXFH150N17T2 DS100229IXFHT150N17T2.pdf
IXFH150N17T2
Виробник: IXYS
Description: MOSFET N-CH 175V 150A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 75A, 10V
Power Dissipation (Max): 880W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 175 V
Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14600 pF @ 25 V
на замовлення 17 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+788.17 грн
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IXFH16N50P3 littelfuse-discrete-mosfets-ixf-16n50p3-datasheet?assetguid=c099d5ad-4c9c-4f25-857b-cb83c46942eb
IXFH16N50P3
Виробник: IXYS
Description: MOSFET N-CH 500V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 8A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 25 V
на замовлення 168 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+550.80 грн
30+306.78 грн
120+257.61 грн
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IXFH34N50P3 DS100411CIXFQFH34N50P3.pdf
IXFH34N50P3
Виробник: IXYS
Description: MOSFET N-CH 500V 34A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 17A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3260 pF @ 25 V
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IXFK120N30P3 littelfuse-discrete-mosfets-ixf-120n30p3-datasheet?assetguid=2c3cbe34-d269-4b27-ab84-6ad8c5b0800e
IXFK120N30P3
Виробник: IXYS
Description: MOSFET N-CH 300V 120A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 60A, 10V
Power Dissipation (Max): 1130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8630 pF @ 25 V
на замовлення 67 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1364.88 грн
25+838.98 грн
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IXFL210N30P3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixfl210n30p3_datasheet.pdf.pdf
IXFL210N30P3
Виробник: IXYS
Description: MOSFET N-CH 300V 108A ISOPLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 105A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: ISOPLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 268 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16200 pF @ 25 V
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IXFN210N30P3 littelfuse-discrete-mosfets-ixfn210n30p3-datasheet?assetguid=ea95238f-f12e-4f01-a0cb-121dd942c6bc
IXFN210N30P3
Виробник: IXYS
Description: MOSFET N-CH 300V 192A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 192A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 105A, 10V
Power Dissipation (Max): 1500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 268 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16200 pF @ 25 V
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IXFP16N50P3 littelfuse-discrete-mosfets-ixf-16n50p3-datasheet?assetguid=c099d5ad-4c9c-4f25-857b-cb83c46942eb
IXFP16N50P3
Виробник: IXYS
Description: MOSFET N-CH 500V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 8A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 25 V
на замовлення 950 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+452.17 грн
50+230.88 грн
100+211.15 грн
500+165.72 грн
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IXFP5N50P3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_5n50p3_datasheet.pdf.pdf
IXFP5N50P3
Виробник: IXYS
Description: MOSFET N-CH 500V 5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.65Ohm @ 2.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
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IXFP8N50P3 DS100455B(IXFA-FP8N50P3).pdf
IXFP8N50P3
Виробник: IXYS
Description: MOSFET N-CH 500V 8A TO-220
товару немає в наявності
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IXFQ26N50P3 171448825littelfusediscretemosfetsnchannelhiperfetsix.pdf
IXFQ26N50P3
Виробник: IXYS
Description: MOSFET N-CH 500V 26A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 25 V
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IXFQ34N50P3
IXFQ34N50P3
Виробник: IXYS
Description: MOSFET N-CH 500V 34A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 17A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3260 pF @ 25 V
на замовлення 272 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+696.23 грн
30+394.40 грн
120+333.96 грн
В кошику  од. на суму  грн.
IXFQ50N50P3 littelfuse-discrete-mosfets-ixf-50n50p3-datasheet?assetguid=9f18c4f6-a40a-4871-ba8b-9eaf25daedcd
IXFQ50N50P3
Виробник: IXYS
Description: MOSFET N-CH 500V 50A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 25A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4335 pF @ 25 V
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IXFQ94N30P3
IXFQ94N30P3
Виробник: IXYS
Description: MOSFET N-CH 300V 94A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 47A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5510 pF @ 25 V
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+924.40 грн
30+574.48 грн
120+516.57 грн
510+475.80 грн
В кошику  од. на суму  грн.
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