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DSEP6-06AS-TRL DSEP6-06AS-TRL IXYS bb18b9ad-80c5-450d-b256-6c9a3ad87b6b.pdf Description: DIODE GEN PURP 600V 6A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.02 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 2465 шт:
термін постачання 21-31 дні (днів)
2+176.3 грн
10+ 152.25 грн
100+ 122.36 грн
500+ 94.34 грн
1000+ 78.51 грн
Мінімальне замовлення: 2
DSEP6-06BS-TRL DSEP6-06BS-TRL IXYS DSEP6-06BS.pdf Description: DIODE GEN PURP 600V 6A TO252AA
товар відсутній
DSI30-08AS-TRL DSI30-08AS-TRL IXYS DSI30-08AS.pdf Description: DIODE GEN PURP 800V 30A TO263AA
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 800 V
товар відсутній
DSI30-16AS-TRL DSI30-16AS-TRL IXYS DSI30-16AS.pdf Description: DIODE GEN PURP 1.6KV 30A TO263AA
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
на замовлення 1753 шт:
термін постачання 21-31 дні (днів)
2+230.33 грн
10+ 186.07 грн
100+ 150.55 грн
Мінімальне замовлення: 2
DSP8-08AS-TRL DSP8-08AS-TRL IXYS DSP8-08AS.pdf Description: DIODE ARRAY GP 800V 11A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 11A
Supplier Device Package: TO-263 (D²Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 7 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 253 шт:
термін постачання 21-31 дні (днів)
2+249.53 грн
10+ 201.95 грн
100+ 163.39 грн
Мінімальне замовлення: 2
DSSK28-006BS-TUB DSSK28-006BS-TUB IXYS DSSK28-006BS.pdf Description: DIODE ARRAY SCHOTTKY 60V TO263AB
товар відсутній
MMIX1F520N075T2 MMIX1F520N075T2 IXYS MMIX1F520N075T2.pdf Description: MOSFET N-CH 75V 500A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 41000 pF @ 25 V
товар відсутній
MMIX1F44N100Q3 MMIX1F44N100Q3 IXYS littelfuse_discrete_mosfets_smpd_packages_mmix1f44n100q3_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 30A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 245mOhm @ 22A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Supplier Device Package: 24-SMPD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 264 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
товар відсутній
MMIX1X100N60B3H1 MMIX1X100N60B3H1 IXYS littelfuse_discrete_igbts_smpd_packages_mmix1x100n60b3h1_datasheet.pdf.pdf Description: IGBT 600V 145A 400W SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
Supplier Device Package: 24-SMPD
Td (on/off) @ 25°C: 30ns/120ns
Switching Energy: 1.9mJ (on), 2mJ (off)
Test Condition: 360V, 70A, 2Ohm, 15V
Gate Charge: 143 nC
Current - Collector (Ic) (Max): 145 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 440 A
Power - Max: 400 W
товар відсутній
MMIX1X200N60B3H1 MMIX1X200N60B3H1 IXYS littelfuse_discrete_igbts_smpd_packages_mmix1x200n60b3h1_datasheet.pdf.pdf Description: IGBT 600V 175A 520W SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
Supplier Device Package: 24-SMPD
Td (on/off) @ 25°C: 48ns/160ns
Switching Energy: 2.85mJ (on), 2.9mJ (off)
Test Condition: 360V, 100A, 1Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 175 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 1000 A
Power - Max: 520 W
на замовлення 23 шт:
термін постачання 21-31 дні (днів)
1+3482.72 грн
10+ 3128.98 грн
IXYH40N120B3 IXYH40N120B3 IXYS littelfuse_discrete_igbts_xpt_ixyh40n120b3_datasheet.pdf.pdf Description: IGBT 1200V 96A 577W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 22ns/177ns
Switching Energy: 2.7mJ (on), 1.6mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 87 nC
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 577 W
товар відсутній
IXYH40N120B3D1 IXYH40N120B3D1 IXYS littelfuse_discrete_igbts_xpt_ixyh40n120b3d1_datasheet.pdf.pdf Description: IGBT 1200V 86A 480W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 22ns/177ns
Switching Energy: 2.7mJ (on), 1.6mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 86 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 480 W
на замовлення 299 шт:
термін постачання 21-31 дні (днів)
1+703.8 грн
30+ 548.75 грн
120+ 516.48 грн
IXYK120N120C3 IXYK120N120C3 IXYS littelfuse_discrete_igbts_xpt_ixy_120n120c3_datasheet.pdf.pdf Description: IGBT 1200V 240A 1500W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 120A
Supplier Device Package: TO-264 (IXYK)
Td (on/off) @ 25°C: 35ns/176ns
Switching Energy: 6.75mJ (on), 5.1mJ (off)
Test Condition: 600V, 100A, 1Ohm, 15V
Gate Charge: 412 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 700 A
Power - Max: 1500 W
на замовлення 270 шт:
термін постачання 21-31 дні (днів)
1+1789.35 грн
25+ 1428.65 грн
100+ 1339.35 грн
IXYR50N120C3D1 IXYR50N120C3D1 IXYS littelfuse_discrete_igbts_xpt_ixyr50n120c3d1_datasheet.pdf.pdf Description: IGBT 1200V 56A 290W ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 50A
Supplier Device Package: ISOPLUS247™
Td (on/off) @ 25°C: 28ns/133ns
Switching Energy: 3mJ (on), 1mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 142 nC
Current - Collector (Ic) (Max): 56 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 210 A
Power - Max: 290 W
товар відсутній
IXYX120N120C3 IXYX120N120C3 IXYS littelfuse_discrete_igbts_xpt_ixy_120n120c3_datasheet.pdf.pdf Description: IGBT 1200V 240A 1500W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 120A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 35ns/176ns
Switching Energy: 6.75mJ (on), 5.1mJ (off)
Test Condition: 600V, 100A, 1Ohm, 15V
Gate Charge: 412 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 700 A
Power - Max: 1500 W
на замовлення 296 шт:
термін постачання 21-31 дні (днів)
1+2286.98 грн
30+ 1825.83 грн
120+ 1711.71 грн
IXYH20N120C3D1 IXYH20N120C3D1 IXYS littelfuse_discrete_igbts_xpt_ixyh20n120c3d1_datasheet.pdf.pdf Description: IGBT 1200V 36A 230W TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 1.3mJ (on), 500µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 53 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 88 A
Power - Max: 230 W
на замовлення 299 шт:
термін постачання 21-31 дні (днів)
1+818.96 грн
30+ 638.39 грн
120+ 600.85 грн
IXYJ20N120C3D1 IXYJ20N120C3D1 IXYS IXYJ20N120C3D1.pdf Description: IGBT 1200V 21A 105W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: ISO247
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 1.3mJ (on), 500µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 53 nC
Part Status: Active
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 84 A
Power - Max: 105 W
на замовлення 390 шт:
термін постачання 21-31 дні (днів)
300+731.79 грн
Мінімальне замовлення: 300
IXYP20N120C3 IXYP20N120C3 IXYS littelfuse_discrete_igbts_xpt_ixy_20n120c3_datasheet.pdf.pdf Description: IGBT 1200V 40A 278W TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 1.3mJ (on), 500µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 53 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 278 W
товар відсутній
IXYH20N120C3 IXYH20N120C3 IXYS littelfuse_discrete_igbts_xpt_ixy_20n120c3_datasheet.pdf.pdf Description: IGBT 1200V 40A 278W TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 1.3mJ (on), 500µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 53 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 278 W
товар відсутній
IXTK5N250 IXTK5N250 IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_5n250_datasheet.pdf.pdf Description: MOSFET N-CH 2500V 5A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 8.8Ohm @ 2.5A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-264 (IXTK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 2500 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8560 pF @ 25 V
на замовлення 1398 шт:
термін постачання 21-31 дні (днів)
1+4365.66 грн
25+ 3694.05 грн
100+ 3439.28 грн
IXTX5N250 IXTX5N250 IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_5n250_datasheet.pdf.pdf Description: MOSFET N-CH 2500V 5A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 8.8Ohm @ 2.5A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 2500 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8560 pF @ 25 V
товар відсутній
IXTN5N250 IXTN5N250 IXYS DS100273A(IXTN5N250).pdf Description: MOSFET N-CH 2500V 5A SOT227B
товар відсутній
IXGV25N250S IXYS DS99760-(IXGH-IXGT-IXGV25N250-S).pdf Description: IGBT 2500V 60A 250W PLUS220SMD
товар відсутній
IXTF02N450 IXTF02N450 IXYS littelfuse_discrete_mosfets_n-channel_standard_ixtf02n450_datasheet.pdf.pdf Description: MOSFET N-CH 4500V 200MA I4PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 750Ohm @ 10mA, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 250µA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4500 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
на замовлення 1028 шт:
термін постачання 21-31 дні (днів)
1+2862.81 грн
25+ 2309.97 грн
100+ 2155.97 грн
IXGF25N250 IXGF25N250 IXYS littelfuse_discrete_igbts_npt_ixgf25n250_datasheet.pdf.pdf Description: IGBT 2500V 30A 114W I4-PAK
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 75A
Supplier Device Package: ISOPLUS i4-PAC™
IGBT Type: NPT
Gate Charge: 75 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 114 W
товар відсутній
IXTA02N450HV IXTA02N450HV IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_02n450hv_datasheet.pdf.pdf Description: MOSFET N-CH 4500V 200MA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 750Ohm @ 10mA, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4500 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
товар відсутній
IXGF25N300 IXGF25N300 IXYS littelfuse_discrete_igbts_npt_ixgf25n300_datasheet.pdf.pdf Description: IGBT 3000V 27A 114W I4-PAK
товар відсутній
IXTT1N450HV IXTT1N450HV IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_1n450hv_datasheet.pdf.pdf Description: MOSFET N-CH 4500V 1A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 85Ohm @ 50mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
товар відсутній
IXGL75N250 IXGL75N250 IXYS DS99861B(IXGL75N250).pdf Description: IGBT 2500V 110A 430W I5-PAK
товар відсутній
IXTF03N400 IXTF03N400 IXYS DS100117A(IXTF03N400).pdf Description: MOSFET N-CH 4000V 300MA I4PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
Rds On (Max) @ Id, Vgs: 300Ohm @ 150mA, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4000 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 25 V
товар відсутній
IXGF20N300 IXGF20N300 IXYS littelfuse_discrete_igbts_npt_ixgf20n300_datasheet.pdf.pdf Description: IGBT 3000V 22A ISOPLUSI4
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 20A
Supplier Device Package: ISOPLUS i4-PAC™
Gate Charge: 31 nC
Current - Collector (Ic) (Max): 22 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 103 A
Power - Max: 100 W
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
1+3364 грн
25+ 2714.2 грн
100+ 2533.23 грн
IXTT02N450HV IXTT02N450HV IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_02n450hv_datasheet.pdf.pdf Description: MOSFET N-CH 4500V 200MA TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 750Ohm @ 10mA, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4500 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
товар відсутній
IXGH10N300 IXGH10N300 IXYS IXGH10N300.pdf Description: IGBT 3000V 18A 100W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 30A
Supplier Device Package: TO-247AD
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 100 W
товар відсутній
IXGK75N250 IXGK75N250 IXYS littelfuse_discrete_igbts_npt_ixg_75n250_datasheet.pdf.pdf Description: IGBT NPT 2500V 170A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 150A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: NPT
Gate Charge: 410 nC
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 530 A
Power - Max: 780 W
на замовлення 294 шт:
термін постачання 21-31 дні (днів)
1+7493.64 грн
25+ 6284.89 грн
100+ 5959 грн
IXGT2N250 IXGT2N250 IXYS littelfuse_discrete_igbts_npt_ixg_2n250_datasheet.pdf.pdf Description: IGBT 2500V 5.5A 32W TO-268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 2A
Supplier Device Package: TO-268AA
Gate Charge: 10.5 nC
Current - Collector (Ic) (Max): 5.5 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 13.5 A
Power - Max: 32 W
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
1+4221.35 грн
10+ 3683.9 грн
IXTF1N450 IXTF1N450 IXYS DS100501D(IXTF1N450).pdf Description: MOSFET N-CH 4500V 900MA I4PAC
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
IXGH2N250 IXGH2N250 IXYS littelfuse_discrete_igbts_npt_ixg_2n250_datasheet.pdf.pdf Description: IGBT 2500V 5.5A 32W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 2A
Supplier Device Package: TO-247AD
Gate Charge: 10.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 5.5 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 13.5 A
Power - Max: 32 W
товар відсутній
IXTA02N250 IXTA02N250 IXYS IXTx02N250(S).pdf Description: MOSFET N-CH 2500V 0.2A TO263
товар відсутній
IXGF36N300 IXGF36N300 IXYS littelfuse_discrete_igbts_npt_ixgf36n300_datasheet.pdf.pdf Description: IGBT 3000V 36A 160W I4-PAK
товар відсутній
IXTH02N250 IXTH02N250 IXYS IXTx02N250%28S%29.pdf Description: MOSFET N-CH 2500V 200MA TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 450Ohm @ 50mA, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 2500 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 116 pF @ 25 V
на замовлення 1782 шт:
термін постачання 21-31 дні (днів)
1+1160.91 грн
30+ 904.98 грн
120+ 851.75 грн
510+ 724.39 грн
IXGF20N250 IXGF20N250 IXYS littelfuse_discrete_igbts_npt_ixgf20n250_datasheet.pdf.pdf Description: IGBT 2500V 23A ISOPLUSI4
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 20A
Supplier Device Package: ISOPLUS i4-PAC™
Gate Charge: 53 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 100 W
товар відсутній
IXTL2N450 IXTL2N450 IXYS littelfuse_discrete_mosfets_n-channel_standard_ixtl2n450_datasheet.pdf.pdf Description: MOSFET N-CH 4500V 2A I5PAK
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 23Ohm @ 1A, 10V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 6V @ 250µA
Supplier Device Package: ISOPLUSi5-Pak™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4500 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
товар відсутній
MMIX1F360N15T2 MMIX1F360N15T2 IXYS littelfuse_discrete_mosfets_smpd_packages_mmix1f360n15t2_datasheet.pdf.pdf Description: MOSFET N-CH 150V 235A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 235A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 100A, 10V
Power Dissipation (Max): 680W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 715 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 47500 pF @ 25 V
товар відсутній
MIXA60WH1200TEH MIXA60WH1200TEH IXYS MIXA60WH1200TEH.pdf Description: IGBT 3PHASE 1200V 85A MODULE
товар відсутній
VUM33-06PH IXYS VUM33-06PH.pdf Description: MODULE MOSFET BRIDGE RECT V1-B
Packaging: Box
Package / Case: 6-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Diode Type: Single Phase (PFC Module)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 106 A
Voltage - Forward (Vf) (Max) @ If: 1.39 V @ 50 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
1+4214.24 грн
10+ 3689.24 грн
IXTT2N170D2 IXTT2N170D2 IXYS littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_2n170_datasheet.pdf.pdf Description: MOSFET N-CH 1700V 2A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tj)
Rds On (Max) @ Id, Vgs: 6.5Ohm @ 1A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 568W (Tc)
Supplier Device Package: TO-268AA
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 25 V
на замовлення 268 шт:
термін постачання 21-31 дні (днів)
1+1982.71 грн
30+ 1582.42 грн
120+ 1483.52 грн
IXXH30N65B4 IXXH30N65B4 IXYS littelfuse_discrete_igbts_xpt_ixxh30n65b4_datasheet.pdf.pdf Description: IGBT PT 650V 65A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 32ns/170ns
Switching Energy: 1.55mJ (on), 480µJ (off)
Test Condition: 400V, 30A, 15Ohm, 15V
Gate Charge: 52 nC
Part Status: Active
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 146 A
Power - Max: 230 W
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
1+395.26 грн
30+ 301.69 грн
IXXH60N65B4H1 IXXH60N65B4H1 IXYS littelfuse_discrete_igbts_xpt_ixxh60n65b4h1_datasheet.pdf.pdf Description: IGBT 650V 116A 380W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 150 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 37ns/145ns
Switching Energy: 3.13mJ (on), 1.15mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 116 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 380 W
товар відсутній
IXXH60N65B4 IXXH60N65B4 IXYS littelfuse_discrete_igbts_xpt_ixxh60n65b4_datasheet.pdf.pdf Description: IGBT 650V 116A 455W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 37ns/145ns
Switching Energy: 3.13mJ (on), 1.15mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 116 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 455 W
на замовлення 1230 шт:
термін постачання 21-31 дні (днів)
1+516.83 грн
10+ 426.63 грн
100+ 355.53 грн
500+ 294.39 грн
1000+ 264.96 грн
IXXH60N65C4 IXXH60N65C4 IXYS littelfuse_discrete_igbts_xpt_ixxh60n65c4_datasheet.pdf.pdf Description: IGBT 650V 118A 455W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 60A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 37ns/133ns
Switching Energy: 3.2mJ (on), 830µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 94 nC
Current - Collector (Ic) (Max): 118 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 455 W
товар відсутній
IXXH40N65B4 IXXH40N65B4 IXYS littelfuse_discrete_igbts_xpt_ixxh40n65b4_datasheet.pdf.pdf Description: IGBT 650V 120A 455W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/144ns
Switching Energy: 1.4mJ (on), 560µJ (off)
Test Condition: 400V, 40A, 5Ohm, 15V
Gate Charge: 77 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 455 W
на замовлення 1050 шт:
термін постачання 21-31 дні (днів)
300+276.9 грн
Мінімальне замовлення: 300
IXXR110N65B4H1 IXXR110N65B4H1 IXYS littelfuse_discrete_igbts_xpt_ixxr110n65b4h1_datasheet.pdf.pdf Description: IGBT 650V 150A 455W ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 110A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Td (on/off) @ 25°C: 38ns/156ns
Switching Energy: 2.2mJ (on), 1.05mJ (off)
Test Condition: 400V, 55A, 2Ohm, 15V
Gate Charge: 183 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 460 A
Power - Max: 455 W
на замовлення 28 шт:
термін постачання 21-31 дні (днів)
1+1372.76 грн
IXXH80N65B4 IXXH80N65B4 IXYS littelfuse_discrete_igbts_xpt_ixxh80n65b4_datasheet.pdf.pdf Description: IGBT 650V 160A 625W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 38ns/120ns
Switching Energy: 3.77mJ (on), 1.2mJ (off)
Test Condition: 400V, 80A, 3Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 430 A
Power - Max: 625 W
на замовлення 2111 шт:
термін постачання 21-31 дні (днів)
1+573.7 грн
30+ 441.21 грн
120+ 394.75 грн
510+ 326.88 грн
1020+ 294.19 грн
2010+ 275.66 грн
IXXH80N65B4H1 IXXH80N65B4H1 IXYS littelfuse_discrete_igbts_xpt_ixxh80n65b4h1_datasheet.pdf.pdf Description: IGBT 650V 160A 625W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 150 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 38ns/120ns
Switching Energy: 3.77mJ (on), 1.2mJ (off)
Test Condition: 400V, 80A, 3Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 430 A
Power - Max: 625 W
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
1+950.48 грн
30+ 740.96 грн
IXXN110N65C4H1 IXXN110N65C4H1 IXYS DS100506C(IXXN110N65C4H1).pdf Description: IGBT MOD 650V 210A 750W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 110A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 210 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 3.69 nF @ 25 V
товар відсутній
IXXH110N65C4 IXXH110N65C4 IXYS littelfuse_discrete_igbts_xpt_ixxh110n65c4_datasheet.pdf.pdf Description: IGBT 650V 234A 880W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 110A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 35ns/143ns
Switching Energy: 2.3mJ (on), 600µJ (off)
Test Condition: 400V, 55A, 2Ohm, 15V
Gate Charge: 180 nC
Part Status: Active
Current - Collector (Ic) (Max): 234 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 880 W
на замовлення 572 шт:
термін постачання 21-31 дні (днів)
1+715.88 грн
30+ 550.58 грн
120+ 492.62 грн
510+ 407.92 грн
IXXN110N65B4H1 IXXN110N65B4H1 IXYS littelfuse_discrete_igbts_xpt_ixxn110n65b4h1_datasheet.pdf.pdf Description: IGBT MOD 650V 215A 750W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 215 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 3.65 nF @ 25 V
товар відсутній
IXXK110N65B4H1 IXXK110N65B4H1 IXYS littelfuse_discrete_igbts_xpt_ixx_110n65b4h1_datasheet.pdf.pdf Description: IGBT 650V 240A 880W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 38ns/156ns
Switching Energy: 2.2mJ (on), 1.05mJ (off)
Test Condition: 400V, 55A, 2Ohm, 15V
Gate Charge: 183 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 630 A
Power - Max: 880 W
товар відсутній
IXXX110N65B4H1 IXXX110N65B4H1 IXYS littelfuse_discrete_igbts_xpt_ixx_110n65b4h1_datasheet.pdf.pdf Description: IGBT 650V 240A 880W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 38ns/156ns
Switching Energy: 2.2mJ (on), 1.05mJ (off)
Test Condition: 400V, 55A, 2Ohm, 15V
Gate Charge: 183 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 630 A
Power - Max: 880 W
товар відсутній
IXXK160N65C4 IXXK160N65C4 IXYS littelfuse_discrete_igbts_xpt_ixx_160n65c4_datasheet.pdf.pdf Description: IGBT 650V 290A 940W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 160A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/197ns
Switching Energy: 3.5mJ (on), 1.3mJ (off)
Test Condition: 400V, 80A, 1Ohm, 15V
Gate Charge: 422 nC
Current - Collector (Ic) (Max): 290 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 800 A
Power - Max: 940 W
товар відсутній
DSEP6-06AS-TRL bb18b9ad-80c5-450d-b256-6c9a3ad87b6b.pdf
DSEP6-06AS-TRL
Виробник: IXYS
Description: DIODE GEN PURP 600V 6A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.02 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 2465 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+176.3 грн
10+ 152.25 грн
100+ 122.36 грн
500+ 94.34 грн
1000+ 78.51 грн
Мінімальне замовлення: 2
DSEP6-06BS-TRL DSEP6-06BS.pdf
DSEP6-06BS-TRL
Виробник: IXYS
Description: DIODE GEN PURP 600V 6A TO252AA
товар відсутній
DSI30-08AS-TRL DSI30-08AS.pdf
DSI30-08AS-TRL
Виробник: IXYS
Description: DIODE GEN PURP 800V 30A TO263AA
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 800 V
товар відсутній
DSI30-16AS-TRL DSI30-16AS.pdf
DSI30-16AS-TRL
Виробник: IXYS
Description: DIODE GEN PURP 1.6KV 30A TO263AA
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
на замовлення 1753 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+230.33 грн
10+ 186.07 грн
100+ 150.55 грн
Мінімальне замовлення: 2
DSP8-08AS-TRL DSP8-08AS.pdf
DSP8-08AS-TRL
Виробник: IXYS
Description: DIODE ARRAY GP 800V 11A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 11A
Supplier Device Package: TO-263 (D²Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 7 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 253 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+249.53 грн
10+ 201.95 грн
100+ 163.39 грн
Мінімальне замовлення: 2
DSSK28-006BS-TUB DSSK28-006BS.pdf
DSSK28-006BS-TUB
Виробник: IXYS
Description: DIODE ARRAY SCHOTTKY 60V TO263AB
товар відсутній
MMIX1F520N075T2 MMIX1F520N075T2.pdf
MMIX1F520N075T2
Виробник: IXYS
Description: MOSFET N-CH 75V 500A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 41000 pF @ 25 V
товар відсутній
MMIX1F44N100Q3 littelfuse_discrete_mosfets_smpd_packages_mmix1f44n100q3_datasheet.pdf.pdf
MMIX1F44N100Q3
Виробник: IXYS
Description: MOSFET N-CH 1000V 30A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 245mOhm @ 22A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Supplier Device Package: 24-SMPD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 264 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
товар відсутній
MMIX1X100N60B3H1 littelfuse_discrete_igbts_smpd_packages_mmix1x100n60b3h1_datasheet.pdf.pdf
MMIX1X100N60B3H1
Виробник: IXYS
Description: IGBT 600V 145A 400W SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
Supplier Device Package: 24-SMPD
Td (on/off) @ 25°C: 30ns/120ns
Switching Energy: 1.9mJ (on), 2mJ (off)
Test Condition: 360V, 70A, 2Ohm, 15V
Gate Charge: 143 nC
Current - Collector (Ic) (Max): 145 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 440 A
Power - Max: 400 W
товар відсутній
MMIX1X200N60B3H1 littelfuse_discrete_igbts_smpd_packages_mmix1x200n60b3h1_datasheet.pdf.pdf
MMIX1X200N60B3H1
Виробник: IXYS
Description: IGBT 600V 175A 520W SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
Supplier Device Package: 24-SMPD
Td (on/off) @ 25°C: 48ns/160ns
Switching Energy: 2.85mJ (on), 2.9mJ (off)
Test Condition: 360V, 100A, 1Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 175 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 1000 A
Power - Max: 520 W
на замовлення 23 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+3482.72 грн
10+ 3128.98 грн
IXYH40N120B3 littelfuse_discrete_igbts_xpt_ixyh40n120b3_datasheet.pdf.pdf
IXYH40N120B3
Виробник: IXYS
Description: IGBT 1200V 96A 577W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 22ns/177ns
Switching Energy: 2.7mJ (on), 1.6mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 87 nC
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 577 W
товар відсутній
IXYH40N120B3D1 littelfuse_discrete_igbts_xpt_ixyh40n120b3d1_datasheet.pdf.pdf
IXYH40N120B3D1
Виробник: IXYS
Description: IGBT 1200V 86A 480W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 22ns/177ns
Switching Energy: 2.7mJ (on), 1.6mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 86 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 480 W
на замовлення 299 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+703.8 грн
30+ 548.75 грн
120+ 516.48 грн
IXYK120N120C3 littelfuse_discrete_igbts_xpt_ixy_120n120c3_datasheet.pdf.pdf
IXYK120N120C3
Виробник: IXYS
Description: IGBT 1200V 240A 1500W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 120A
Supplier Device Package: TO-264 (IXYK)
Td (on/off) @ 25°C: 35ns/176ns
Switching Energy: 6.75mJ (on), 5.1mJ (off)
Test Condition: 600V, 100A, 1Ohm, 15V
Gate Charge: 412 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 700 A
Power - Max: 1500 W
на замовлення 270 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1789.35 грн
25+ 1428.65 грн
100+ 1339.35 грн
IXYR50N120C3D1 littelfuse_discrete_igbts_xpt_ixyr50n120c3d1_datasheet.pdf.pdf
IXYR50N120C3D1
Виробник: IXYS
Description: IGBT 1200V 56A 290W ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 50A
Supplier Device Package: ISOPLUS247™
Td (on/off) @ 25°C: 28ns/133ns
Switching Energy: 3mJ (on), 1mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 142 nC
Current - Collector (Ic) (Max): 56 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 210 A
Power - Max: 290 W
товар відсутній
IXYX120N120C3 littelfuse_discrete_igbts_xpt_ixy_120n120c3_datasheet.pdf.pdf
IXYX120N120C3
Виробник: IXYS
Description: IGBT 1200V 240A 1500W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 120A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 35ns/176ns
Switching Energy: 6.75mJ (on), 5.1mJ (off)
Test Condition: 600V, 100A, 1Ohm, 15V
Gate Charge: 412 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 700 A
Power - Max: 1500 W
на замовлення 296 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+2286.98 грн
30+ 1825.83 грн
120+ 1711.71 грн
IXYH20N120C3D1 littelfuse_discrete_igbts_xpt_ixyh20n120c3d1_datasheet.pdf.pdf
IXYH20N120C3D1
Виробник: IXYS
Description: IGBT 1200V 36A 230W TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 1.3mJ (on), 500µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 53 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 88 A
Power - Max: 230 W
на замовлення 299 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+818.96 грн
30+ 638.39 грн
120+ 600.85 грн
IXYJ20N120C3D1 IXYJ20N120C3D1.pdf
IXYJ20N120C3D1
Виробник: IXYS
Description: IGBT 1200V 21A 105W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: ISO247
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 1.3mJ (on), 500µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 53 nC
Part Status: Active
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 84 A
Power - Max: 105 W
на замовлення 390 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
300+731.79 грн
Мінімальне замовлення: 300
IXYP20N120C3 littelfuse_discrete_igbts_xpt_ixy_20n120c3_datasheet.pdf.pdf
IXYP20N120C3
Виробник: IXYS
Description: IGBT 1200V 40A 278W TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 1.3mJ (on), 500µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 53 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 278 W
товар відсутній
IXYH20N120C3 littelfuse_discrete_igbts_xpt_ixy_20n120c3_datasheet.pdf.pdf
IXYH20N120C3
Виробник: IXYS
Description: IGBT 1200V 40A 278W TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 1.3mJ (on), 500µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 53 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 278 W
товар відсутній
IXTK5N250 littelfuse_discrete_mosfets_n-channel_standard_ixt_5n250_datasheet.pdf.pdf
IXTK5N250
Виробник: IXYS
Description: MOSFET N-CH 2500V 5A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 8.8Ohm @ 2.5A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-264 (IXTK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 2500 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8560 pF @ 25 V
на замовлення 1398 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+4365.66 грн
25+ 3694.05 грн
100+ 3439.28 грн
IXTX5N250 littelfuse_discrete_mosfets_n-channel_standard_ixt_5n250_datasheet.pdf.pdf
IXTX5N250
Виробник: IXYS
Description: MOSFET N-CH 2500V 5A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 8.8Ohm @ 2.5A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 2500 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8560 pF @ 25 V
товар відсутній
IXTN5N250 DS100273A(IXTN5N250).pdf
IXTN5N250
Виробник: IXYS
Description: MOSFET N-CH 2500V 5A SOT227B
товар відсутній
IXGV25N250S DS99760-(IXGH-IXGT-IXGV25N250-S).pdf
Виробник: IXYS
Description: IGBT 2500V 60A 250W PLUS220SMD
товар відсутній
IXTF02N450 littelfuse_discrete_mosfets_n-channel_standard_ixtf02n450_datasheet.pdf.pdf
IXTF02N450
Виробник: IXYS
Description: MOSFET N-CH 4500V 200MA I4PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 750Ohm @ 10mA, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 250µA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4500 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
на замовлення 1028 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+2862.81 грн
25+ 2309.97 грн
100+ 2155.97 грн
IXGF25N250 littelfuse_discrete_igbts_npt_ixgf25n250_datasheet.pdf.pdf
IXGF25N250
Виробник: IXYS
Description: IGBT 2500V 30A 114W I4-PAK
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 75A
Supplier Device Package: ISOPLUS i4-PAC™
IGBT Type: NPT
Gate Charge: 75 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 114 W
товар відсутній
IXTA02N450HV littelfuse_discrete_mosfets_n-channel_standard_ixt_02n450hv_datasheet.pdf.pdf
IXTA02N450HV
Виробник: IXYS
Description: MOSFET N-CH 4500V 200MA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 750Ohm @ 10mA, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4500 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
товар відсутній
IXGF25N300 littelfuse_discrete_igbts_npt_ixgf25n300_datasheet.pdf.pdf
IXGF25N300
Виробник: IXYS
Description: IGBT 3000V 27A 114W I4-PAK
товар відсутній
IXTT1N450HV littelfuse_discrete_mosfets_n-channel_standard_ixt_1n450hv_datasheet.pdf.pdf
IXTT1N450HV
Виробник: IXYS
Description: MOSFET N-CH 4500V 1A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 85Ohm @ 50mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
товар відсутній
IXGL75N250 DS99861B(IXGL75N250).pdf
IXGL75N250
Виробник: IXYS
Description: IGBT 2500V 110A 430W I5-PAK
товар відсутній
IXTF03N400 DS100117A(IXTF03N400).pdf
IXTF03N400
Виробник: IXYS
Description: MOSFET N-CH 4000V 300MA I4PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
Rds On (Max) @ Id, Vgs: 300Ohm @ 150mA, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4000 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 25 V
товар відсутній
IXGF20N300 littelfuse_discrete_igbts_npt_ixgf20n300_datasheet.pdf.pdf
IXGF20N300
Виробник: IXYS
Description: IGBT 3000V 22A ISOPLUSI4
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 20A
Supplier Device Package: ISOPLUS i4-PAC™
Gate Charge: 31 nC
Current - Collector (Ic) (Max): 22 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 103 A
Power - Max: 100 W
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+3364 грн
25+ 2714.2 грн
100+ 2533.23 грн
IXTT02N450HV littelfuse_discrete_mosfets_n-channel_standard_ixt_02n450hv_datasheet.pdf.pdf
IXTT02N450HV
Виробник: IXYS
Description: MOSFET N-CH 4500V 200MA TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 750Ohm @ 10mA, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4500 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
товар відсутній
IXGH10N300 IXGH10N300.pdf
IXGH10N300
Виробник: IXYS
Description: IGBT 3000V 18A 100W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 30A
Supplier Device Package: TO-247AD
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 100 W
товар відсутній
IXGK75N250 littelfuse_discrete_igbts_npt_ixg_75n250_datasheet.pdf.pdf
IXGK75N250
Виробник: IXYS
Description: IGBT NPT 2500V 170A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 150A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: NPT
Gate Charge: 410 nC
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 530 A
Power - Max: 780 W
на замовлення 294 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+7493.64 грн
25+ 6284.89 грн
100+ 5959 грн
IXGT2N250 littelfuse_discrete_igbts_npt_ixg_2n250_datasheet.pdf.pdf
IXGT2N250
Виробник: IXYS
Description: IGBT 2500V 5.5A 32W TO-268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 2A
Supplier Device Package: TO-268AA
Gate Charge: 10.5 nC
Current - Collector (Ic) (Max): 5.5 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 13.5 A
Power - Max: 32 W
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+4221.35 грн
10+ 3683.9 грн
IXTF1N450 DS100501D(IXTF1N450).pdf
IXTF1N450
Виробник: IXYS
Description: MOSFET N-CH 4500V 900MA I4PAC
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
IXGH2N250 littelfuse_discrete_igbts_npt_ixg_2n250_datasheet.pdf.pdf
IXGH2N250
Виробник: IXYS
Description: IGBT 2500V 5.5A 32W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 2A
Supplier Device Package: TO-247AD
Gate Charge: 10.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 5.5 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 13.5 A
Power - Max: 32 W
товар відсутній
IXTA02N250 IXTx02N250(S).pdf
IXTA02N250
Виробник: IXYS
Description: MOSFET N-CH 2500V 0.2A TO263
товар відсутній
IXGF36N300 littelfuse_discrete_igbts_npt_ixgf36n300_datasheet.pdf.pdf
IXGF36N300
Виробник: IXYS
Description: IGBT 3000V 36A 160W I4-PAK
товар відсутній
IXTH02N250 IXTx02N250%28S%29.pdf
IXTH02N250
Виробник: IXYS
Description: MOSFET N-CH 2500V 200MA TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 450Ohm @ 50mA, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 2500 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 116 pF @ 25 V
на замовлення 1782 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1160.91 грн
30+ 904.98 грн
120+ 851.75 грн
510+ 724.39 грн
IXGF20N250 littelfuse_discrete_igbts_npt_ixgf20n250_datasheet.pdf.pdf
IXGF20N250
Виробник: IXYS
Description: IGBT 2500V 23A ISOPLUSI4
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 20A
Supplier Device Package: ISOPLUS i4-PAC™
Gate Charge: 53 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 100 W
товар відсутній
IXTL2N450 littelfuse_discrete_mosfets_n-channel_standard_ixtl2n450_datasheet.pdf.pdf
IXTL2N450
Виробник: IXYS
Description: MOSFET N-CH 4500V 2A I5PAK
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 23Ohm @ 1A, 10V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 6V @ 250µA
Supplier Device Package: ISOPLUSi5-Pak™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4500 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
товар відсутній
MMIX1F360N15T2 littelfuse_discrete_mosfets_smpd_packages_mmix1f360n15t2_datasheet.pdf.pdf
MMIX1F360N15T2
Виробник: IXYS
Description: MOSFET N-CH 150V 235A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 235A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 100A, 10V
Power Dissipation (Max): 680W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 715 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 47500 pF @ 25 V
товар відсутній
MIXA60WH1200TEH MIXA60WH1200TEH.pdf
MIXA60WH1200TEH
Виробник: IXYS
Description: IGBT 3PHASE 1200V 85A MODULE
товар відсутній
VUM33-06PH VUM33-06PH.pdf
Виробник: IXYS
Description: MODULE MOSFET BRIDGE RECT V1-B
Packaging: Box
Package / Case: 6-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Diode Type: Single Phase (PFC Module)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 106 A
Voltage - Forward (Vf) (Max) @ If: 1.39 V @ 50 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+4214.24 грн
10+ 3689.24 грн
IXTT2N170D2 littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_2n170_datasheet.pdf.pdf
IXTT2N170D2
Виробник: IXYS
Description: MOSFET N-CH 1700V 2A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tj)
Rds On (Max) @ Id, Vgs: 6.5Ohm @ 1A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 568W (Tc)
Supplier Device Package: TO-268AA
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 25 V
на замовлення 268 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1982.71 грн
30+ 1582.42 грн
120+ 1483.52 грн
IXXH30N65B4 littelfuse_discrete_igbts_xpt_ixxh30n65b4_datasheet.pdf.pdf
IXXH30N65B4
Виробник: IXYS
Description: IGBT PT 650V 65A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 32ns/170ns
Switching Energy: 1.55mJ (on), 480µJ (off)
Test Condition: 400V, 30A, 15Ohm, 15V
Gate Charge: 52 nC
Part Status: Active
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 146 A
Power - Max: 230 W
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+395.26 грн
30+ 301.69 грн
IXXH60N65B4H1 littelfuse_discrete_igbts_xpt_ixxh60n65b4h1_datasheet.pdf.pdf
IXXH60N65B4H1
Виробник: IXYS
Description: IGBT 650V 116A 380W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 150 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 37ns/145ns
Switching Energy: 3.13mJ (on), 1.15mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 116 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 380 W
товар відсутній
IXXH60N65B4 littelfuse_discrete_igbts_xpt_ixxh60n65b4_datasheet.pdf.pdf
IXXH60N65B4
Виробник: IXYS
Description: IGBT 650V 116A 455W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 37ns/145ns
Switching Energy: 3.13mJ (on), 1.15mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 116 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 455 W
на замовлення 1230 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+516.83 грн
10+ 426.63 грн
100+ 355.53 грн
500+ 294.39 грн
1000+ 264.96 грн
IXXH60N65C4 littelfuse_discrete_igbts_xpt_ixxh60n65c4_datasheet.pdf.pdf
IXXH60N65C4
Виробник: IXYS
Description: IGBT 650V 118A 455W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 60A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 37ns/133ns
Switching Energy: 3.2mJ (on), 830µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 94 nC
Current - Collector (Ic) (Max): 118 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 455 W
товар відсутній
IXXH40N65B4 littelfuse_discrete_igbts_xpt_ixxh40n65b4_datasheet.pdf.pdf
IXXH40N65B4
Виробник: IXYS
Description: IGBT 650V 120A 455W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/144ns
Switching Energy: 1.4mJ (on), 560µJ (off)
Test Condition: 400V, 40A, 5Ohm, 15V
Gate Charge: 77 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 455 W
на замовлення 1050 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
300+276.9 грн
Мінімальне замовлення: 300
IXXR110N65B4H1 littelfuse_discrete_igbts_xpt_ixxr110n65b4h1_datasheet.pdf.pdf
IXXR110N65B4H1
Виробник: IXYS
Description: IGBT 650V 150A 455W ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 110A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Td (on/off) @ 25°C: 38ns/156ns
Switching Energy: 2.2mJ (on), 1.05mJ (off)
Test Condition: 400V, 55A, 2Ohm, 15V
Gate Charge: 183 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 460 A
Power - Max: 455 W
на замовлення 28 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1372.76 грн
IXXH80N65B4 littelfuse_discrete_igbts_xpt_ixxh80n65b4_datasheet.pdf.pdf
IXXH80N65B4
Виробник: IXYS
Description: IGBT 650V 160A 625W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 38ns/120ns
Switching Energy: 3.77mJ (on), 1.2mJ (off)
Test Condition: 400V, 80A, 3Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 430 A
Power - Max: 625 W
на замовлення 2111 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+573.7 грн
30+ 441.21 грн
120+ 394.75 грн
510+ 326.88 грн
1020+ 294.19 грн
2010+ 275.66 грн
IXXH80N65B4H1 littelfuse_discrete_igbts_xpt_ixxh80n65b4h1_datasheet.pdf.pdf
IXXH80N65B4H1
Виробник: IXYS
Description: IGBT 650V 160A 625W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 150 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 38ns/120ns
Switching Energy: 3.77mJ (on), 1.2mJ (off)
Test Condition: 400V, 80A, 3Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 430 A
Power - Max: 625 W
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+950.48 грн
30+ 740.96 грн
IXXN110N65C4H1 DS100506C(IXXN110N65C4H1).pdf
IXXN110N65C4H1
Виробник: IXYS
Description: IGBT MOD 650V 210A 750W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 110A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 210 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 3.69 nF @ 25 V
товар відсутній
IXXH110N65C4 littelfuse_discrete_igbts_xpt_ixxh110n65c4_datasheet.pdf.pdf
IXXH110N65C4
Виробник: IXYS
Description: IGBT 650V 234A 880W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 110A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 35ns/143ns
Switching Energy: 2.3mJ (on), 600µJ (off)
Test Condition: 400V, 55A, 2Ohm, 15V
Gate Charge: 180 nC
Part Status: Active
Current - Collector (Ic) (Max): 234 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 880 W
на замовлення 572 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+715.88 грн
30+ 550.58 грн
120+ 492.62 грн
510+ 407.92 грн
IXXN110N65B4H1 littelfuse_discrete_igbts_xpt_ixxn110n65b4h1_datasheet.pdf.pdf
IXXN110N65B4H1
Виробник: IXYS
Description: IGBT MOD 650V 215A 750W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 215 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 3.65 nF @ 25 V
товар відсутній
IXXK110N65B4H1 littelfuse_discrete_igbts_xpt_ixx_110n65b4h1_datasheet.pdf.pdf
IXXK110N65B4H1
Виробник: IXYS
Description: IGBT 650V 240A 880W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 38ns/156ns
Switching Energy: 2.2mJ (on), 1.05mJ (off)
Test Condition: 400V, 55A, 2Ohm, 15V
Gate Charge: 183 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 630 A
Power - Max: 880 W
товар відсутній
IXXX110N65B4H1 littelfuse_discrete_igbts_xpt_ixx_110n65b4h1_datasheet.pdf.pdf
IXXX110N65B4H1
Виробник: IXYS
Description: IGBT 650V 240A 880W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 38ns/156ns
Switching Energy: 2.2mJ (on), 1.05mJ (off)
Test Condition: 400V, 55A, 2Ohm, 15V
Gate Charge: 183 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 630 A
Power - Max: 880 W
товар відсутній
IXXK160N65C4 littelfuse_discrete_igbts_xpt_ixx_160n65c4_datasheet.pdf.pdf
IXXK160N65C4
Виробник: IXYS
Description: IGBT 650V 290A 940W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 160A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/197ns
Switching Energy: 3.5mJ (on), 1.3mJ (off)
Test Condition: 400V, 80A, 1Ohm, 15V
Gate Charge: 422 nC
Current - Collector (Ic) (Max): 290 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 800 A
Power - Max: 940 W
товар відсутній
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