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IXYX120N120C3 IXYX120N120C3 IXYS DS100451BIXYKX120N120C3.pdf Description: IGBT 1200V 240A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 120A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 35ns/176ns
Switching Energy: 6.75mJ (on), 5.1mJ (off)
Test Condition: 600V, 100A, 1Ohm, 15V
Gate Charge: 412 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 700 A
Power - Max: 1500 W
на замовлення 631 шт:
термін постачання 21-31 дні (днів)
1+2619.19 грн
30+1696.97 грн
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IXYH20N120C3D1 IXYH20N120C3D1 IXYS DS100485BIXYH20N120C3D1.pdf Description: IGBT 1200V 36A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 1.3mJ (on), 500µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 53 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 88 A
Power - Max: 230 W
на замовлення 510 шт:
термін постачання 21-31 дні (днів)
1+640.07 грн
30+363.73 грн
120+308.37 грн
510+264.15 грн
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IXYJ20N120C3D1 IXYJ20N120C3D1 IXYS IXYJ20N120C3D1.pdf Description: IGBT 1200V 21A ISO247
Switching Energy: 1.3mJ (on), 500µJ (off)
Td (on/off) @ 25°C: 20ns/90ns
Supplier Device Package: ISO247
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Reverse Recovery Time (trr): 195 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 105 W
Current - Collector Pulsed (Icm): 84 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 21 A
Part Status: Active
Gate Charge: 53 nC
Test Condition: 600V, 20A, 10Ohm, 15V
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXYP20N120C3 IXYP20N120C3 IXYS littelfuse-discrete-igbts-ixy-20n120c3-datasheet?assetguid=4b247f38-be7d-4c7b-8c1c-ca3a974d6ebe Description: IGBT 1200V 40A TO-220-3
Part Status: Active
Gate Charge: 53 nC
Test Condition: 600V, 20A, 10Ohm, 15V
Switching Energy: 1.3mJ (on), 500µJ (off)
Td (on/off) @ 25°C: 20ns/90ns
Supplier Device Package: TO-220-3
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 278 W
Current - Collector Pulsed (Icm): 96 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 40 A
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
1+493.62 грн
50+254.43 грн
100+233.09 грн
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IXYH20N120C3 IXYH20N120C3 IXYS littelfuse-discrete-igbts-ixy-20n120c3-datasheet?assetguid=4b247f38-be7d-4c7b-8c1c-ca3a974d6ebe Description: IGBT 1200V 40A TO-247
Supplier Device Package: TO-247 (IXTH)
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 278 W
Current - Collector Pulsed (Icm): 96 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 40 A
Gate Charge: 53 nC
Test Condition: 600V, 20A, 10Ohm, 15V
Switching Energy: 1.3mJ (on), 500µJ (off)
Td (on/off) @ 25°C: 20ns/90ns
на замовлення 110 шт:
термін постачання 21-31 дні (днів)
1+450.22 грн
30+248.19 грн
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IXGV25N250S IXYS Description: IGBT NPT 2500V 60A PLUS-220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 75A
Supplier Device Package: PLUS-220SMD
IGBT Type: NPT
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 250 W
товару немає в наявності
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IXTF02N450 IXTF02N450 IXYS DS100499AIXTF02N450.pdf Description: MOSFET N-CH 4500V 200MA I4PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 750Ohm @ 10mA, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 250µA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4500 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
на замовлення 136 шт:
термін постачання 21-31 дні (днів)
1+2881.88 грн
25+2315.78 грн
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IXGF25N250 IXGF25N250 IXYS littelfuse_discrete_igbts_npt_ixgf25n250_datasheet.pdf.pdf Description: IGBT 2500V 30A 114W I4-PAK
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 75A
Supplier Device Package: ISOPLUS i4-PAC™
IGBT Type: NPT
Gate Charge: 75 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 114 W
товару немає в наявності
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IXTA02N450HV IXTA02N450HV IXYS littelfuse-discrete-mosfets-ixt-02n450hv-datasheet?assetguid=77e78b19-f9d4-4f1c-bb1f-3fed948a23e3 Description: MOSFET N-CH 4500V 200MA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 750Ohm @ 10mA, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4500 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
IXGF25N300 IXGF25N300 IXYS littelfuse_discrete_igbts_npt_ixgf25n300_datasheet.pdf.pdf Description: IGBT 3000V 27A 114W I4-PAK
товару немає в наявності
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IXGL75N250 IXGL75N250 IXYS DS99861B(IXGL75N250).pdf Description: IGBT 2500V 110A 430W I5-PAK
товару немає в наявності
 Мінімальне замовлення: 25 шт
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IXTF03N400 IXTF03N400 IXYS DS100117A(IXTF03N400).pdf Description: MOSFET N-CH 4000V 300MA I4PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
Rds On (Max) @ Id, Vgs: 300Ohm @ 150mA, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4000 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 25 V
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IXGF20N300 IXGF20N300 IXYS littelfuse_discrete_igbts_npt_ixgf20n300_datasheet.pdf.pdf Description: IGBT 3000V 22A ISOPLUS I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 20A
Supplier Device Package: ISOPLUS i4-PAC™
Gate Charge: 31 nC
Current - Collector (Ic) (Max): 22 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 103 A
Power - Max: 100 W
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXGH10N300 IXGH10N300 IXYS IXGH10N300.pdf Description: IGBT 3000V 18A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 30A
Supplier Device Package: TO-247AD
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 100 W
товару немає в наявності
 Мінімальне замовлення: 30 шт
В кошику  од. на суму  грн.
IXGK75N250 IXGK75N250 IXYS Description: IGBT NPT 2500V 170A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 150A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: NPT
Gate Charge: 410 nC
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 530 A
Power - Max: 780 W
на замовлення 721 шт:
термін постачання 21-31 дні (днів)
1+7756.83 грн
25+6273.66 грн
В кошику  од. на суму  грн.
IXGT2N250 IXGT2N250 IXYS littelfuse_discrete_igbts_npt_ixg_2n250_datasheet.pdf.pdf Description: IGBT 2500V 5.5A TO268AA
Power - Max: 32 W
Current - Collector Pulsed (Icm): 13.5 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector (Ic) (Max): 5.5 A
Gate Charge: 10.5 nC
Supplier Device Package: TO-268AA
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 2A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
1+4725.39 грн
В кошику  од. на суму  грн.
IXGH2N250 IXGH2N250 IXYS littelfuse_discrete_igbts_npt_ixg_2n250_datasheet.pdf.pdf Description: IGBT 2500V 5.5A 32W TO247
Power - Max: 32 W
Current - Collector Pulsed (Icm): 13.5 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector (Ic) (Max): 5.5 A
Part Status: Active
Gate Charge: 10.5 nC
Supplier Device Package: TO-247AD
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 2A
Input Type: Standard
на замовлення 283 шт:
термін постачання 21-31 дні (днів)
1+1163.14 грн
30+906.52 грн
120+853.18 грн
В кошику  од. на суму  грн.
IXTA02N250 IXTA02N250 IXYS IXTx02N250%28S%29.pdf Description: MOSFET N-CH 2500V 200MA TO263
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 450Ohm @ 50mA, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 116 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V
Drain to Source Voltage (Vdss): 2500 V
товару немає в наявності
 Мінімальне замовлення: 50 шт
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IXGF36N300 IXGF36N300 IXYS littelfuse_discrete_igbts_npt_ixgf36n300_datasheet.pdf.pdf Description: IGBT 3000V 36A 160W I4-PAK
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IXGF20N250 IXGF20N250 IXYS littelfuse_discrete_igbts_npt_ixgf20n250_datasheet.pdf.pdf Description: IGBT 2500V 23A ISOPLUSI4
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 20A
Supplier Device Package: ISOPLUS i4-PAC™
Gate Charge: 53 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 100 W
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MMIX1F360N15T2 MMIX1F360N15T2 IXYS media?resourcetype=datasheets&itemid=D974702A-D102-455F-98DF-8C5F7606CE98&filename=littelfuse-discrete-mosfets-n-channel-trench-gate-mmix1f360n15t2-datasheet Description: MOSFET N-CH 150V 235A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 235A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 100A, 10V
Power Dissipation (Max): 680W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 715 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 47500 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
MIXA60WH1200TEH MIXA60WH1200TEH IXYS MIXA60WH1200TEH.pdf Description: IGBT 3PHASE 1200V 85A MODULE
товару немає в наявності
 Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
VUM33-06PH VUM33-06PH IXYS media?resourcetype=datasheets&itemid=35E1EAD4-02BD-42D5-B91A-46AE09552393&filename=Littelfuse-Power-Semiconductors-VUM33-06PH-Datasheet Description: BRIDGE RECT 1PHASE 600V 106A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Single Phase (PFC Module)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Lead Exposed Pad
Packaging: Box
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.39 V @ 50 A
Current - Average Rectified (Io): 106 A
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IXXH30N65B4 IXXH30N65B4 IXYS littelfuse-discrete-igbts-ixxh30n65b4-datasheet?assetguid=bb76bd16-6a6e-45a4-b34e-7d116578b2b0 Description: IGBT PT 650V 65A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 32ns/170ns
Switching Energy: 1.55mJ (on), 480µJ (off)
Test Condition: 400V, 30A, 15Ohm, 15V
Gate Charge: 52 nC
Part Status: Active
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 146 A
Power - Max: 230 W
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
1+489.74 грн
В кошику  од. на суму  грн.
IXXH60N65B4H1 IXXH60N65B4H1 IXYS littelfuse-discrete-igbts-ixxh60n65b4h1-datasheet?assetguid=3de83c42-63bf-4736-b1ff-7b83c15e7a8f Description: IGBT PT 650V 116A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 150 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 37ns/145ns
Switching Energy: 3.13mJ (on), 1.15mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 116 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 380 W
на замовлення 51 шт:
термін постачання 21-31 дні (днів)
1+1036.83 грн
30+610.67 грн
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IXXH60N65B4 IXXH60N65B4 IXYS littelfusediscreteigbtsxptixxh60n65b4datashee.pdf Description: IGBT PT 650V 116A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 37ns/145ns
Switching Energy: 3.13mJ (on), 1.15mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 116 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 455 W
на замовлення 960 шт:
термін постачання 21-31 дні (днів)
1+594.35 грн
30+333.60 грн
120+281.25 грн
510+227.94 грн
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IXXH60N65C4 IXXH60N65C4 IXYS media?resourcetype=datasheets&itemid=72FD28C3-E1C0-4F85-8E5B-CC977BD3349C&filename=Littelfuse-Discrete-IGBTs-XPT-IXXH60N65C4-Datasheet.PDF Description: IGBT PT 650V 118A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 60A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 37ns/133ns
Switching Energy: 3.2mJ (on), 830µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 94 nC
Current - Collector (Ic) (Max): 118 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 455 W
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXXH40N65B4 IXXH40N65B4 IXYS littelfuse-discrete-igbts-ixxh40n65b4-datasheet?assetguid=cdfdc92b-2f9a-4753-947c-46c7022391f6 Description: IGBT PT 650V 120A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/144ns
Switching Energy: 1.4mJ (on), 560µJ (off)
Test Condition: 400V, 40A, 5Ohm, 15V
Gate Charge: 77 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 455 W
на замовлення 1440 шт:
термін постачання 21-31 дні (днів)
1+590.48 грн
30+331.84 грн
120+279.72 грн
510+226.65 грн
1020+219.40 грн
В кошику  од. на суму  грн.
IXXR110N65B4H1 IXXR110N65B4H1 IXYS littelfuse-discrete-igbts-ixxr110n65b4h1-datasheet?assetguid=39b5b664-4108-4d30-a4e5-551615b43c2b Description: IGBT PT 650V 150A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 110A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Td (on/off) @ 25°C: 38ns/156ns
Switching Energy: 2.2mJ (on), 1.05mJ (off)
Test Condition: 400V, 55A, 2Ohm, 15V
Gate Charge: 183 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 460 A
Power - Max: 455 W
на замовлення 617 шт:
термін постачання 21-31 дні (днів)
1+2139.52 грн
30+1344.52 грн
120+1230.88 грн
В кошику  од. на суму  грн.
IXXH80N65B4 IXXH80N65B4 IXYS ds100527b%28ixxh80n65b4%29.pdf Description: IGBT PT 650V 160A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 38ns/120ns
Switching Energy: 3.77mJ (on), 1.2mJ (off)
Test Condition: 400V, 80A, 3Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 430 A
Power - Max: 625 W
на замовлення 5737 шт:
термін постачання 21-31 дні (днів)
1+750.11 грн
30+429.62 грн
120+365.42 грн
510+300.14 грн
В кошику  од. на суму  грн.
IXXH80N65B4H1 IXXH80N65B4H1 IXYS ds100528c%28ixxh80n65b4h1%29.pdf Description: IGBT PT 650V 160A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 150 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 38ns/120ns
Switching Energy: 3.77mJ (on), 1.2mJ (off)
Test Condition: 400V, 80A, 3Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 430 A
Power - Max: 625 W
на замовлення 1843 шт:
термін постачання 21-31 дні (днів)
1+1046.13 грн
30+616.79 грн
120+531.22 грн
510+462.96 грн
В кошику  од. на суму  грн.
IXXN110N65C4H1 IXXN110N65C4H1 IXYS Littelfuse-Discrete-IGBTs-XPT-IXXN110N65C4H1-Datasheet.PDF?assetguid=D57B89E1-FC96-4AFA-B6E3-35B07F2CB2AF Description: IGBT MOD 650V 210A 750W SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 110A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 210 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 3.69 nF @ 25 V
на замовлення 577 шт:
термін постачання 21-31 дні (днів)
1+2361.14 грн
10+1679.86 грн
100+1392.57 грн
В кошику  од. на суму  грн.
IXXH110N65C4 IXXH110N65C4 IXYS ds100497c%28ixxh110n65c4%29.pdf Description: IGBT PT 650V 234A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 110A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 35ns/143ns
Switching Energy: 2.3mJ (on), 600µJ (off)
Test Condition: 400V, 55A, 2Ohm, 15V
Gate Charge: 180 nC
Part Status: Active
Current - Collector (Ic) (Max): 234 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 880 W
на замовлення 4590 шт:
термін постачання 21-31 дні (днів)
1+1108.12 грн
30+656.56 грн
120+566.83 грн
510+499.38 грн
В кошику  од. на суму  грн.
IXXN110N65B4H1 IXXN110N65B4H1 IXYS littelfuse-discrete-igbts-ixxn110n65b4h1-datasheet?assetguid=7ba2f796-a557-41cb-97c1-663bdf80a5ae Description: IGBT MOD 650V 215A 750W SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 215 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 3.65 nF @ 25 V
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
1+2208.49 грн
10+1597.85 грн
В кошику  од. на суму  грн.
IXXK110N65B4H1 IXXK110N65B4H1 IXYS littelfuse-discrete-igbts-ixx-110n65b4h1-datasheet?assetguid=f2444f1a-72a7-4cd6-9d41-c399cd2e0f6d Description: IGBT PT 650V 240A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 38ns/156ns
Switching Energy: 2.2mJ (on), 1.05mJ (off)
Test Condition: 400V, 55A, 2Ohm, 15V
Gate Charge: 183 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 630 A
Power - Max: 880 W
на замовлення 278 шт:
термін постачання 21-31 дні (днів)
1+1905.50 грн
25+1206.77 грн
100+1061.29 грн
В кошику  од. на суму  грн.
IXXX110N65B4H1 IXXX110N65B4H1 IXYS littelfuse-discrete-igbts-ixx-110n65b4h1-datasheet?assetguid=f2444f1a-72a7-4cd6-9d41-c399cd2e0f6d Description: IGBT PT 650V 240A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 38ns/156ns
Switching Energy: 2.2mJ (on), 1.05mJ (off)
Test Condition: 400V, 55A, 2Ohm, 15V
Gate Charge: 183 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 630 A
Power - Max: 880 W
на замовлення 167 шт:
термін постачання 21-31 дні (днів)
1+1662.95 грн
30+1021.88 грн
120+895.30 грн
В кошику  од. на суму  грн.
IXXK160N65C4 IXXK160N65C4 IXYS DS100516AIXXKX160N65C4.pdf Description: IGBT PT 650V 290A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 160A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/197ns
Switching Energy: 3.5mJ (on), 1.3mJ (off)
Test Condition: 400V, 80A, 1Ohm, 15V
Gate Charge: 422 nC
Current - Collector (Ic) (Max): 290 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 800 A
Power - Max: 940 W
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXXX160N65C4 IXXX160N65C4 IXYS littelfuse-discrete-igbts-ixx-160n65c4-datasheet?assetguid=dcea7101-7c37-4ad5-a03a-2aa565384e38 Description: IGBT PT 650V 290A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 160A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/197ns
Switching Energy: 3.5mJ (on), 1.3mJ (off)
Test Condition: 400V, 80A, 1Ohm, 15V
Gate Charge: 422 nC
Part Status: Active
Current - Collector (Ic) (Max): 290 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 800 A
Power - Max: 940 W
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IXXK160N65B4 IXXK160N65B4 IXYS littelfuse-discrete-igbts-ixx-160n65b4-datasheet?assetguid=c438c04a-54c3-4291-8c76-245b042e9f40 Description: IGBT PT 650V 310A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 160A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/220ns
Switching Energy: 3.3mJ (on), 1.88mJ (off)
Test Condition: 400V, 80A, 1Ohm, 15V
Gate Charge: 425 nC
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 860 A
Power - Max: 940 W
на замовлення 350 шт:
термін постачання 21-31 дні (днів)
1+2102.32 грн
25+1342.34 грн
100+1201.18 грн
В кошику  од. на суму  грн.
IXXX160N65B4 IXXX160N65B4 IXYS littelfuse-discrete-igbts-ixx-160n65b4-datasheet?assetguid=c438c04a-54c3-4291-8c76-245b042e9f40 Description: IGBT PT 650V 310A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 160A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/220ns
Switching Energy: 3.3mJ (on), 1.88mJ (off)
Test Condition: 400V, 80A, 1Ohm, 15V
Gate Charge: 425 nC
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 860 A
Power - Max: 940 W
на замовлення 1530 шт:
термін постачання 21-31 дні (днів)
1+2133.32 грн
30+1338.70 грн
120+1223.25 грн
В кошику  од. на суму  грн.
IXXK200N65B4 IXXK200N65B4 IXYS littelfuse_discrete_igbts_xpt_ixxx200n65b4_datasheet.pdf.pdf Description: IGBT 650V 370A 1150W TO264
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Power - Max: 1150 W
Current - Collector Pulsed (Icm): 1000 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 370 A
Part Status: Active
Gate Charge: 553 nC
Test Condition: 400V, 100A, 1Ohm, 15V
Switching Energy: 4.4mJ (on), 2.2mJ (off)
Td (on/off) @ 25°C: 62ns/245ns
IGBT Type: PT
Supplier Device Package: TO-264 (IXXK)
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 160A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
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IXXX200N65B4 IXXX200N65B4 IXYS littelfuse-discrete-igbts-ixxx200n65b4-datasheet?assetguid=da9236d0-556d-429e-a7cb-bc5ea6265537 Description: IGBT PT 650V 370A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 160A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 62ns/245ns
Switching Energy: 4.4mJ (on), 2.2mJ (off)
Test Condition: 400V, 100A, 1Ohm, 15V
Gate Charge: 553 nC
Part Status: Active
Current - Collector (Ic) (Max): 370 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 1000 A
Power - Max: 1150 W
на замовлення 1121 шт:
термін постачання 21-31 дні (днів)
1+2571.14 грн
30+1662.23 грн
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SLFL-M-WHT SLFL-M-WHT IXYS SLFL-M-WHT_Web.pdf Description: FLASHLIGHT LED AAA(1)
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IXBF10N300C IXBF10N300C IXYS Description: IGBT 3000V 29A 240W ISOPLUSI4
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 700 ns
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 10A
Supplier Device Package: ISOPLUS i4-PAC™
Td (on/off) @ 25°C: 32ns/390ns
Switching Energy: 7.2mJ (on), 1.04mJ (off)
Test Condition: 1500V, 10A, 10Ohm, 15V
Gate Charge: 208 nC
Part Status: Active
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 240 W
товару немає в наявності
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IXBF15N300C IXBF15N300C IXYS DS100536(IXBF15N300C).pdf Description: IGBT 3000V 37A 300W ISOPLUSI4
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MMIX1F210N30P3 IXYS media?resourcetype=datasheets&itemid=670ef26e-24b2-4f5e-8ee0-56c3d653d777&filename=littelfuse_discrete_mosfets_smpd_packages_mmix1f210n30p3_datasheet.pdf Description: MOSFET N-CH 300V 108A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 105A, 10V
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Part Status: Active
Drain to Source Voltage (Vdss): 300 V
Input Capacitance (Ciss) (Max) @ Vds: 16200 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFP5N100PM IXFP5N100PM IXYS DS100537IXFP5N100PM.pdf Description: MOSFET N-CH 1000V 2.3A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 2.5A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 6V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 33.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
на замовлення 196 шт:
термін постачання 21-31 дні (днів)
1+681.14 грн
50+362.28 грн
100+334.05 грн
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IXYH20N65C3 IXYH20N65C3 IXYS littelfuse-discrete-igbts-ixy-20n65c3-datasheet?assetguid=3b358faf-e927-45eb-bcf4-0c8e79ff0e79 Description: IGBT PT 650V 50A TO-247
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 230 W
Current - Collector Pulsed (Icm): 105 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 50 A
Gate Charge: 30 nC
Test Condition: 400V, 20A, 20Ohm, 15V
Switching Energy: 430µJ (on), 350µJ (off)
Td (on/off) @ 25°C: 19ns/80ns
IGBT Type: PT
Supplier Device Package: TO-247 (IXTH)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXYP15N65C3 IXYP15N65C3 IXYS littelfuse-discrete-igbts-ixyp15n65c3-datasheet?assetguid=4e5f3cf0-bc61-483c-9e5d-ee31587de80b Description: IGBT PT 650V 38A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/68ns
Switching Energy: 270µJ (on), 230µJ (off)
Test Condition: 400V, 15A, 20Ohm, 15V
Gate Charge: 19 nC
Part Status: Active
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 200 W
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXYP10N65C3 IXYP10N65C3 IXYS media?resourcetype=datasheets&itemid=5801B7FA-03DB-41AE-B2E5-3704B5115475&filename=Littelfuse-Discrete-IGBTs-XPT-IXYP10N65C3-Datasheet.PDF Description: IGBT PT 650V 30A TO-220-3
Power - Max: 160 W
Current - Collector Pulsed (Icm): 54 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 30 A
Part Status: Active
Gate Charge: 18 nC
Test Condition: 400V, 10A, 50Ohm, 15V
Switching Energy: 240µJ (on), 110µJ (off)
Td (on/off) @ 25°C: 20ns/77ns
IGBT Type: PT
Supplier Device Package: TO-220-3
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
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IXYH40N90C3D1 IXYH40N90C3D1 IXYS DS100441AIXYH40N90C3D1.pdf Description: IGBT 900V 90A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 27ns/78ns
Switching Energy: 1.9mJ (on), 1mJ (off)
Test Condition: 450V, 40A, 5Ohm, 15V
Gate Charge: 74 nC
Part Status: Active
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 500 W
на замовлення 497 шт:
термін постачання 21-31 дні (днів)
1+928.34 грн
30+541.70 грн
120+464.61 грн
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IXYK140N90C3 IXYK140N90C3 IXYS DS100450BIXYKX140N90C3.pdf Description: IGBT 900V 310A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 140A
Supplier Device Package: TO-264 (IXYK)
Td (on/off) @ 25°C: 40ns/145ns
Switching Energy: 4.3mJ (on), 4mJ (off)
Test Condition: 450V, 100A, 1Ohm, 15V
Gate Charge: 330 nC
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 840 A
Power - Max: 1630 W
на замовлення 78 шт:
термін постачання 21-31 дні (днів)
1+2079.85 грн
25+1327.83 грн
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IXYH80N90C3 IXYH80N90C3 IXYS DS100446BIXYTYH80N90C3.pdf Description: IGBT 900V 165A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 34ns/90ns
Switching Energy: 4.3mJ (on), 1.9mJ (off)
Test Condition: 450V, 80A, 2Ohm, 15V
Gate Charge: 145 nC
Part Status: Active
Current - Collector (Ic) (Max): 165 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 830 W
на замовлення 916 шт:
термін постачання 21-31 дні (днів)
1+968.63 грн
30+570.23 грн
120+490.68 грн
510+451.54 грн
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IXTA44P15TTRL IXTA44P15TTRL IXYS DS100023B(IXTA-TH-TQ-TP44P15T).pdf Description: MOSFET P-CH 150V 44A TO-263
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXTA44P15T-TRL IXTA44P15T-TRL IXYS littelfuse-discrete-mosfets-ixt-44p15t-datasheet?assetguid=7f3ca350-d79f-4e06-bce3-4b5b84d96ba2 Description: MOSFET P-CH 150V 44A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V
на замовлення 19385 шт:
термін постачання 21-31 дні (днів)
1+607.53 грн
10+399.30 грн
100+294.17 грн
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IXTA96P085T-TRL IXTA96P085T-TRL IXYS littelfuse-discrete-mosfets-ixt-96p085t-datasheet?assetguid=961f5f5c-1ad9-4e7d-b8e3-2e5ee68588a7 Description: MOSFET P-CH 85V 96A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 48A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
800+248.67 грн
Мінімальне замовлення: 800 шт
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IXTA96P085T-TRL IXTA96P085T-TRL IXYS littelfuse-discrete-mosfets-ixt-96p085t-datasheet?assetguid=961f5f5c-1ad9-4e7d-b8e3-2e5ee68588a7 Description: MOSFET P-CH 85V 96A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 48A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
на замовлення 1734 шт:
термін постачання 21-31 дні (днів)
1+607.53 грн
10+399.30 грн
100+294.17 грн
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IXTY12N06TTRL IXTY12N06TTRL IXYS Description: MOSFET N-CH 60V 12A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 6A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 5000 шт
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IXTY12N06TTRL IXTY12N06TTRL IXYS Description: MOSFET N-CH 60V 12A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 6A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
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CLA100PD1200NA CLA100PD1200NA IXYS Littelfuse-Power-Semiconductors-CLA100PD1200NA-Datasheet?assetguid=3c99ebf3-0787-4f96-8215-5f6801302969 Description: SCR MODULE 1.2KV 150A SOT-227-4
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1620A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 100 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 150 A
Voltage - Off State: 1.2 kV
товару немає в наявності
 Мінімальне замовлення: 100 шт
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IXYX120N120C3 DS100451BIXYKX120N120C3.pdf
IXYX120N120C3
Виробник: IXYS
Description: IGBT 1200V 240A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 120A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 35ns/176ns
Switching Energy: 6.75mJ (on), 5.1mJ (off)
Test Condition: 600V, 100A, 1Ohm, 15V
Gate Charge: 412 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 700 A
Power - Max: 1500 W
на замовлення 631 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2619.19 грн
30+1696.97 грн
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IXYH20N120C3D1 DS100485BIXYH20N120C3D1.pdf
IXYH20N120C3D1
Виробник: IXYS
Description: IGBT 1200V 36A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 1.3mJ (on), 500µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 53 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 88 A
Power - Max: 230 W
на замовлення 510 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+640.07 грн
30+363.73 грн
120+308.37 грн
510+264.15 грн
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IXYJ20N120C3D1 IXYJ20N120C3D1.pdf
IXYJ20N120C3D1
Виробник: IXYS
Description: IGBT 1200V 21A ISO247
Switching Energy: 1.3mJ (on), 500µJ (off)
Td (on/off) @ 25°C: 20ns/90ns
Supplier Device Package: ISO247
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Reverse Recovery Time (trr): 195 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 105 W
Current - Collector Pulsed (Icm): 84 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 21 A
Part Status: Active
Gate Charge: 53 nC
Test Condition: 600V, 20A, 10Ohm, 15V
товару немає в наявності
Мінімальне замовлення: 300 шт
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IXYP20N120C3 littelfuse-discrete-igbts-ixy-20n120c3-datasheet?assetguid=4b247f38-be7d-4c7b-8c1c-ca3a974d6ebe
IXYP20N120C3
Виробник: IXYS
Description: IGBT 1200V 40A TO-220-3
Part Status: Active
Gate Charge: 53 nC
Test Condition: 600V, 20A, 10Ohm, 15V
Switching Energy: 1.3mJ (on), 500µJ (off)
Td (on/off) @ 25°C: 20ns/90ns
Supplier Device Package: TO-220-3
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 278 W
Current - Collector Pulsed (Icm): 96 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 40 A
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+493.62 грн
50+254.43 грн
100+233.09 грн
В кошику  од. на суму  грн.
IXYH20N120C3 littelfuse-discrete-igbts-ixy-20n120c3-datasheet?assetguid=4b247f38-be7d-4c7b-8c1c-ca3a974d6ebe
IXYH20N120C3
Виробник: IXYS
Description: IGBT 1200V 40A TO-247
Supplier Device Package: TO-247 (IXTH)
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 278 W
Current - Collector Pulsed (Icm): 96 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 40 A
Gate Charge: 53 nC
Test Condition: 600V, 20A, 10Ohm, 15V
Switching Energy: 1.3mJ (on), 500µJ (off)
Td (on/off) @ 25°C: 20ns/90ns
на замовлення 110 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+450.22 грн
30+248.19 грн
В кошику  од. на суму  грн.
IXGV25N250S
Виробник: IXYS
Description: IGBT NPT 2500V 60A PLUS-220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 75A
Supplier Device Package: PLUS-220SMD
IGBT Type: NPT
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 250 W
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IXTF02N450 DS100499AIXTF02N450.pdf
IXTF02N450
Виробник: IXYS
Description: MOSFET N-CH 4500V 200MA I4PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 750Ohm @ 10mA, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 250µA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4500 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
на замовлення 136 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2881.88 грн
25+2315.78 грн
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IXGF25N250 littelfuse_discrete_igbts_npt_ixgf25n250_datasheet.pdf.pdf
IXGF25N250
Виробник: IXYS
Description: IGBT 2500V 30A 114W I4-PAK
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 75A
Supplier Device Package: ISOPLUS i4-PAC™
IGBT Type: NPT
Gate Charge: 75 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 114 W
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IXTA02N450HV littelfuse-discrete-mosfets-ixt-02n450hv-datasheet?assetguid=77e78b19-f9d4-4f1c-bb1f-3fed948a23e3
IXTA02N450HV
Виробник: IXYS
Description: MOSFET N-CH 4500V 200MA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 750Ohm @ 10mA, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4500 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
IXGF25N300 littelfuse_discrete_igbts_npt_ixgf25n300_datasheet.pdf.pdf
IXGF25N300
Виробник: IXYS
Description: IGBT 3000V 27A 114W I4-PAK
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IXGL75N250 DS99861B(IXGL75N250).pdf
IXGL75N250
Виробник: IXYS
Description: IGBT 2500V 110A 430W I5-PAK
товару немає в наявності
Мінімальне замовлення: 25 шт
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IXTF03N400 DS100117A(IXTF03N400).pdf
IXTF03N400
Виробник: IXYS
Description: MOSFET N-CH 4000V 300MA I4PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
Rds On (Max) @ Id, Vgs: 300Ohm @ 150mA, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4000 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 25 V
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IXGF20N300 littelfuse_discrete_igbts_npt_ixgf20n300_datasheet.pdf.pdf
IXGF20N300
Виробник: IXYS
Description: IGBT 3000V 22A ISOPLUS I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 20A
Supplier Device Package: ISOPLUS i4-PAC™
Gate Charge: 31 nC
Current - Collector (Ic) (Max): 22 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 103 A
Power - Max: 100 W
товару немає в наявності
Мінімальне замовлення: 300 шт
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IXGH10N300 IXGH10N300.pdf
IXGH10N300
Виробник: IXYS
Description: IGBT 3000V 18A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 30A
Supplier Device Package: TO-247AD
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 100 W
товару немає в наявності
Мінімальне замовлення: 30 шт
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IXGK75N250
IXGK75N250
Виробник: IXYS
Description: IGBT NPT 2500V 170A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 150A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: NPT
Gate Charge: 410 nC
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 530 A
Power - Max: 780 W
на замовлення 721 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+7756.83 грн
25+6273.66 грн
В кошику  од. на суму  грн.
IXGT2N250 littelfuse_discrete_igbts_npt_ixg_2n250_datasheet.pdf.pdf
IXGT2N250
Виробник: IXYS
Description: IGBT 2500V 5.5A TO268AA
Power - Max: 32 W
Current - Collector Pulsed (Icm): 13.5 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector (Ic) (Max): 5.5 A
Gate Charge: 10.5 nC
Supplier Device Package: TO-268AA
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 2A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+4725.39 грн
В кошику  од. на суму  грн.
IXGH2N250 littelfuse_discrete_igbts_npt_ixg_2n250_datasheet.pdf.pdf
IXGH2N250
Виробник: IXYS
Description: IGBT 2500V 5.5A 32W TO247
Power - Max: 32 W
Current - Collector Pulsed (Icm): 13.5 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector (Ic) (Max): 5.5 A
Part Status: Active
Gate Charge: 10.5 nC
Supplier Device Package: TO-247AD
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 2A
Input Type: Standard
на замовлення 283 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1163.14 грн
30+906.52 грн
120+853.18 грн
В кошику  од. на суму  грн.
IXTA02N250 IXTx02N250%28S%29.pdf
IXTA02N250
Виробник: IXYS
Description: MOSFET N-CH 2500V 200MA TO263
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 450Ohm @ 50mA, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 116 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V
Drain to Source Voltage (Vdss): 2500 V
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
IXGF36N300 littelfuse_discrete_igbts_npt_ixgf36n300_datasheet.pdf.pdf
IXGF36N300
Виробник: IXYS
Description: IGBT 3000V 36A 160W I4-PAK
товару немає в наявності
В кошику  од. на суму  грн.
IXGF20N250 littelfuse_discrete_igbts_npt_ixgf20n250_datasheet.pdf.pdf
IXGF20N250
Виробник: IXYS
Description: IGBT 2500V 23A ISOPLUSI4
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 20A
Supplier Device Package: ISOPLUS i4-PAC™
Gate Charge: 53 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 100 W
товару немає в наявності
В кошику  од. на суму  грн.
MMIX1F360N15T2 media?resourcetype=datasheets&itemid=D974702A-D102-455F-98DF-8C5F7606CE98&filename=littelfuse-discrete-mosfets-n-channel-trench-gate-mmix1f360n15t2-datasheet
MMIX1F360N15T2
Виробник: IXYS
Description: MOSFET N-CH 150V 235A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 235A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 100A, 10V
Power Dissipation (Max): 680W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 715 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 47500 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
MIXA60WH1200TEH MIXA60WH1200TEH.pdf
MIXA60WH1200TEH
Виробник: IXYS
Description: IGBT 3PHASE 1200V 85A MODULE
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
VUM33-06PH media?resourcetype=datasheets&itemid=35E1EAD4-02BD-42D5-B91A-46AE09552393&filename=Littelfuse-Power-Semiconductors-VUM33-06PH-Datasheet
VUM33-06PH
Виробник: IXYS
Description: BRIDGE RECT 1PHASE 600V 106A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Single Phase (PFC Module)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Lead Exposed Pad
Packaging: Box
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.39 V @ 50 A
Current - Average Rectified (Io): 106 A
товару немає в наявності
В кошику  од. на суму  грн.
IXXH30N65B4 littelfuse-discrete-igbts-ixxh30n65b4-datasheet?assetguid=bb76bd16-6a6e-45a4-b34e-7d116578b2b0
IXXH30N65B4
Виробник: IXYS
Description: IGBT PT 650V 65A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 32ns/170ns
Switching Energy: 1.55mJ (on), 480µJ (off)
Test Condition: 400V, 30A, 15Ohm, 15V
Gate Charge: 52 nC
Part Status: Active
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 146 A
Power - Max: 230 W
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+489.74 грн
В кошику  од. на суму  грн.
IXXH60N65B4H1 littelfuse-discrete-igbts-ixxh60n65b4h1-datasheet?assetguid=3de83c42-63bf-4736-b1ff-7b83c15e7a8f
IXXH60N65B4H1
Виробник: IXYS
Description: IGBT PT 650V 116A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 150 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 37ns/145ns
Switching Energy: 3.13mJ (on), 1.15mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 116 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 380 W
на замовлення 51 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1036.83 грн
30+610.67 грн
В кошику  од. на суму  грн.
IXXH60N65B4 littelfusediscreteigbtsxptixxh60n65b4datashee.pdf
IXXH60N65B4
Виробник: IXYS
Description: IGBT PT 650V 116A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 37ns/145ns
Switching Energy: 3.13mJ (on), 1.15mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 116 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 455 W
на замовлення 960 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+594.35 грн
30+333.60 грн
120+281.25 грн
510+227.94 грн
В кошику  од. на суму  грн.
IXXH60N65C4 media?resourcetype=datasheets&itemid=72FD28C3-E1C0-4F85-8E5B-CC977BD3349C&filename=Littelfuse-Discrete-IGBTs-XPT-IXXH60N65C4-Datasheet.PDF
IXXH60N65C4
Виробник: IXYS
Description: IGBT PT 650V 118A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 60A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 37ns/133ns
Switching Energy: 3.2mJ (on), 830µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 94 nC
Current - Collector (Ic) (Max): 118 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 455 W
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXXH40N65B4 littelfuse-discrete-igbts-ixxh40n65b4-datasheet?assetguid=cdfdc92b-2f9a-4753-947c-46c7022391f6
IXXH40N65B4
Виробник: IXYS
Description: IGBT PT 650V 120A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/144ns
Switching Energy: 1.4mJ (on), 560µJ (off)
Test Condition: 400V, 40A, 5Ohm, 15V
Gate Charge: 77 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 455 W
на замовлення 1440 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+590.48 грн
30+331.84 грн
120+279.72 грн
510+226.65 грн
1020+219.40 грн
В кошику  од. на суму  грн.
IXXR110N65B4H1 littelfuse-discrete-igbts-ixxr110n65b4h1-datasheet?assetguid=39b5b664-4108-4d30-a4e5-551615b43c2b
IXXR110N65B4H1
Виробник: IXYS
Description: IGBT PT 650V 150A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 110A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Td (on/off) @ 25°C: 38ns/156ns
Switching Energy: 2.2mJ (on), 1.05mJ (off)
Test Condition: 400V, 55A, 2Ohm, 15V
Gate Charge: 183 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 460 A
Power - Max: 455 W
на замовлення 617 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2139.52 грн
30+1344.52 грн
120+1230.88 грн
В кошику  од. на суму  грн.
IXXH80N65B4 ds100527b%28ixxh80n65b4%29.pdf
IXXH80N65B4
Виробник: IXYS
Description: IGBT PT 650V 160A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 38ns/120ns
Switching Energy: 3.77mJ (on), 1.2mJ (off)
Test Condition: 400V, 80A, 3Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 430 A
Power - Max: 625 W
на замовлення 5737 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+750.11 грн
30+429.62 грн
120+365.42 грн
510+300.14 грн
В кошику  од. на суму  грн.
IXXH80N65B4H1 ds100528c%28ixxh80n65b4h1%29.pdf
IXXH80N65B4H1
Виробник: IXYS
Description: IGBT PT 650V 160A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 150 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 38ns/120ns
Switching Energy: 3.77mJ (on), 1.2mJ (off)
Test Condition: 400V, 80A, 3Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 430 A
Power - Max: 625 W
на замовлення 1843 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1046.13 грн
30+616.79 грн
120+531.22 грн
510+462.96 грн
В кошику  од. на суму  грн.
IXXN110N65C4H1 Littelfuse-Discrete-IGBTs-XPT-IXXN110N65C4H1-Datasheet.PDF?assetguid=D57B89E1-FC96-4AFA-B6E3-35B07F2CB2AF
IXXN110N65C4H1
Виробник: IXYS
Description: IGBT MOD 650V 210A 750W SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 110A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 210 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 3.69 nF @ 25 V
на замовлення 577 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2361.14 грн
10+1679.86 грн
100+1392.57 грн
В кошику  од. на суму  грн.
IXXH110N65C4 ds100497c%28ixxh110n65c4%29.pdf
IXXH110N65C4
Виробник: IXYS
Description: IGBT PT 650V 234A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 110A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 35ns/143ns
Switching Energy: 2.3mJ (on), 600µJ (off)
Test Condition: 400V, 55A, 2Ohm, 15V
Gate Charge: 180 nC
Part Status: Active
Current - Collector (Ic) (Max): 234 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 880 W
на замовлення 4590 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1108.12 грн
30+656.56 грн
120+566.83 грн
510+499.38 грн
В кошику  од. на суму  грн.
IXXN110N65B4H1 littelfuse-discrete-igbts-ixxn110n65b4h1-datasheet?assetguid=7ba2f796-a557-41cb-97c1-663bdf80a5ae
IXXN110N65B4H1
Виробник: IXYS
Description: IGBT MOD 650V 215A 750W SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 215 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 3.65 nF @ 25 V
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2208.49 грн
10+1597.85 грн
В кошику  од. на суму  грн.
IXXK110N65B4H1 littelfuse-discrete-igbts-ixx-110n65b4h1-datasheet?assetguid=f2444f1a-72a7-4cd6-9d41-c399cd2e0f6d
IXXK110N65B4H1
Виробник: IXYS
Description: IGBT PT 650V 240A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 38ns/156ns
Switching Energy: 2.2mJ (on), 1.05mJ (off)
Test Condition: 400V, 55A, 2Ohm, 15V
Gate Charge: 183 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 630 A
Power - Max: 880 W
на замовлення 278 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1905.50 грн
25+1206.77 грн
100+1061.29 грн
В кошику  од. на суму  грн.
IXXX110N65B4H1 littelfuse-discrete-igbts-ixx-110n65b4h1-datasheet?assetguid=f2444f1a-72a7-4cd6-9d41-c399cd2e0f6d
IXXX110N65B4H1
Виробник: IXYS
Description: IGBT PT 650V 240A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 38ns/156ns
Switching Energy: 2.2mJ (on), 1.05mJ (off)
Test Condition: 400V, 55A, 2Ohm, 15V
Gate Charge: 183 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 630 A
Power - Max: 880 W
на замовлення 167 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1662.95 грн
30+1021.88 грн
120+895.30 грн
В кошику  од. на суму  грн.
IXXK160N65C4 DS100516AIXXKX160N65C4.pdf
IXXK160N65C4
Виробник: IXYS
Description: IGBT PT 650V 290A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 160A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/197ns
Switching Energy: 3.5mJ (on), 1.3mJ (off)
Test Condition: 400V, 80A, 1Ohm, 15V
Gate Charge: 422 nC
Current - Collector (Ic) (Max): 290 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 800 A
Power - Max: 940 W
товару немає в наявності
Мінімальне замовлення: 300 шт
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IXXX160N65C4 littelfuse-discrete-igbts-ixx-160n65c4-datasheet?assetguid=dcea7101-7c37-4ad5-a03a-2aa565384e38
IXXX160N65C4
Виробник: IXYS
Description: IGBT PT 650V 290A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 160A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/197ns
Switching Energy: 3.5mJ (on), 1.3mJ (off)
Test Condition: 400V, 80A, 1Ohm, 15V
Gate Charge: 422 nC
Part Status: Active
Current - Collector (Ic) (Max): 290 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 800 A
Power - Max: 940 W
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IXXK160N65B4 littelfuse-discrete-igbts-ixx-160n65b4-datasheet?assetguid=c438c04a-54c3-4291-8c76-245b042e9f40
IXXK160N65B4
Виробник: IXYS
Description: IGBT PT 650V 310A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 160A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/220ns
Switching Energy: 3.3mJ (on), 1.88mJ (off)
Test Condition: 400V, 80A, 1Ohm, 15V
Gate Charge: 425 nC
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 860 A
Power - Max: 940 W
на замовлення 350 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2102.32 грн
25+1342.34 грн
100+1201.18 грн
В кошику  од. на суму  грн.
IXXX160N65B4 littelfuse-discrete-igbts-ixx-160n65b4-datasheet?assetguid=c438c04a-54c3-4291-8c76-245b042e9f40
IXXX160N65B4
Виробник: IXYS
Description: IGBT PT 650V 310A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 160A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/220ns
Switching Energy: 3.3mJ (on), 1.88mJ (off)
Test Condition: 400V, 80A, 1Ohm, 15V
Gate Charge: 425 nC
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 860 A
Power - Max: 940 W
на замовлення 1530 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2133.32 грн
30+1338.70 грн
120+1223.25 грн
В кошику  од. на суму  грн.
IXXK200N65B4 littelfuse_discrete_igbts_xpt_ixxx200n65b4_datasheet.pdf.pdf
IXXK200N65B4
Виробник: IXYS
Description: IGBT 650V 370A 1150W TO264
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Power - Max: 1150 W
Current - Collector Pulsed (Icm): 1000 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 370 A
Part Status: Active
Gate Charge: 553 nC
Test Condition: 400V, 100A, 1Ohm, 15V
Switching Energy: 4.4mJ (on), 2.2mJ (off)
Td (on/off) @ 25°C: 62ns/245ns
IGBT Type: PT
Supplier Device Package: TO-264 (IXXK)
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 160A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
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IXXX200N65B4 littelfuse-discrete-igbts-ixxx200n65b4-datasheet?assetguid=da9236d0-556d-429e-a7cb-bc5ea6265537
IXXX200N65B4
Виробник: IXYS
Description: IGBT PT 650V 370A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 160A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 62ns/245ns
Switching Energy: 4.4mJ (on), 2.2mJ (off)
Test Condition: 400V, 100A, 1Ohm, 15V
Gate Charge: 553 nC
Part Status: Active
Current - Collector (Ic) (Max): 370 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 1000 A
Power - Max: 1150 W
на замовлення 1121 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2571.14 грн
30+1662.23 грн
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SLFL-M-WHT SLFL-M-WHT_Web.pdf
SLFL-M-WHT
Виробник: IXYS
Description: FLASHLIGHT LED AAA(1)
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IXBF10N300C
IXBF10N300C
Виробник: IXYS
Description: IGBT 3000V 29A 240W ISOPLUSI4
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 700 ns
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 10A
Supplier Device Package: ISOPLUS i4-PAC™
Td (on/off) @ 25°C: 32ns/390ns
Switching Energy: 7.2mJ (on), 1.04mJ (off)
Test Condition: 1500V, 10A, 10Ohm, 15V
Gate Charge: 208 nC
Part Status: Active
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 240 W
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IXBF15N300C DS100536(IXBF15N300C).pdf
IXBF15N300C
Виробник: IXYS
Description: IGBT 3000V 37A 300W ISOPLUSI4
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MMIX1F210N30P3 media?resourcetype=datasheets&itemid=670ef26e-24b2-4f5e-8ee0-56c3d653d777&filename=littelfuse_discrete_mosfets_smpd_packages_mmix1f210n30p3_datasheet.pdf
Виробник: IXYS
Description: MOSFET N-CH 300V 108A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 105A, 10V
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Part Status: Active
Drain to Source Voltage (Vdss): 300 V
Input Capacitance (Ciss) (Max) @ Vds: 16200 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 300 шт
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IXFP5N100PM DS100537IXFP5N100PM.pdf
IXFP5N100PM
Виробник: IXYS
Description: MOSFET N-CH 1000V 2.3A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 2.5A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 6V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 33.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
на замовлення 196 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+681.14 грн
50+362.28 грн
100+334.05 грн
В кошику  од. на суму  грн.
IXYH20N65C3 littelfuse-discrete-igbts-ixy-20n65c3-datasheet?assetguid=3b358faf-e927-45eb-bcf4-0c8e79ff0e79
IXYH20N65C3
Виробник: IXYS
Description: IGBT PT 650V 50A TO-247
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 230 W
Current - Collector Pulsed (Icm): 105 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 50 A
Gate Charge: 30 nC
Test Condition: 400V, 20A, 20Ohm, 15V
Switching Energy: 430µJ (on), 350µJ (off)
Td (on/off) @ 25°C: 19ns/80ns
IGBT Type: PT
Supplier Device Package: TO-247 (IXTH)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
товару немає в наявності
Мінімальне замовлення: 300 шт
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IXYP15N65C3 littelfuse-discrete-igbts-ixyp15n65c3-datasheet?assetguid=4e5f3cf0-bc61-483c-9e5d-ee31587de80b
IXYP15N65C3
Виробник: IXYS
Description: IGBT PT 650V 38A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/68ns
Switching Energy: 270µJ (on), 230µJ (off)
Test Condition: 400V, 15A, 20Ohm, 15V
Gate Charge: 19 nC
Part Status: Active
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 200 W
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXYP10N65C3 media?resourcetype=datasheets&itemid=5801B7FA-03DB-41AE-B2E5-3704B5115475&filename=Littelfuse-Discrete-IGBTs-XPT-IXYP10N65C3-Datasheet.PDF
IXYP10N65C3
Виробник: IXYS
Description: IGBT PT 650V 30A TO-220-3
Power - Max: 160 W
Current - Collector Pulsed (Icm): 54 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 30 A
Part Status: Active
Gate Charge: 18 nC
Test Condition: 400V, 10A, 50Ohm, 15V
Switching Energy: 240µJ (on), 110µJ (off)
Td (on/off) @ 25°C: 20ns/77ns
IGBT Type: PT
Supplier Device Package: TO-220-3
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IXYH40N90C3D1 DS100441AIXYH40N90C3D1.pdf
IXYH40N90C3D1
Виробник: IXYS
Description: IGBT 900V 90A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 27ns/78ns
Switching Energy: 1.9mJ (on), 1mJ (off)
Test Condition: 450V, 40A, 5Ohm, 15V
Gate Charge: 74 nC
Part Status: Active
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 500 W
на замовлення 497 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+928.34 грн
30+541.70 грн
120+464.61 грн
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IXYK140N90C3 DS100450BIXYKX140N90C3.pdf
IXYK140N90C3
Виробник: IXYS
Description: IGBT 900V 310A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 140A
Supplier Device Package: TO-264 (IXYK)
Td (on/off) @ 25°C: 40ns/145ns
Switching Energy: 4.3mJ (on), 4mJ (off)
Test Condition: 450V, 100A, 1Ohm, 15V
Gate Charge: 330 nC
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 840 A
Power - Max: 1630 W
на замовлення 78 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2079.85 грн
25+1327.83 грн
В кошику  од. на суму  грн.
IXYH80N90C3 DS100446BIXYTYH80N90C3.pdf
IXYH80N90C3
Виробник: IXYS
Description: IGBT 900V 165A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 34ns/90ns
Switching Energy: 4.3mJ (on), 1.9mJ (off)
Test Condition: 450V, 80A, 2Ohm, 15V
Gate Charge: 145 nC
Part Status: Active
Current - Collector (Ic) (Max): 165 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 830 W
на замовлення 916 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+968.63 грн
30+570.23 грн
120+490.68 грн
510+451.54 грн
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IXTA44P15TTRL DS100023B(IXTA-TH-TQ-TP44P15T).pdf
IXTA44P15TTRL
Виробник: IXYS
Description: MOSFET P-CH 150V 44A TO-263
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXTA44P15T-TRL littelfuse-discrete-mosfets-ixt-44p15t-datasheet?assetguid=7f3ca350-d79f-4e06-bce3-4b5b84d96ba2
IXTA44P15T-TRL
Виробник: IXYS
Description: MOSFET P-CH 150V 44A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V
на замовлення 19385 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+607.53 грн
10+399.30 грн
100+294.17 грн
В кошику  од. на суму  грн.
IXTA96P085T-TRL littelfuse-discrete-mosfets-ixt-96p085t-datasheet?assetguid=961f5f5c-1ad9-4e7d-b8e3-2e5ee68588a7
IXTA96P085T-TRL
Виробник: IXYS
Description: MOSFET P-CH 85V 96A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 48A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
800+248.67 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXTA96P085T-TRL littelfuse-discrete-mosfets-ixt-96p085t-datasheet?assetguid=961f5f5c-1ad9-4e7d-b8e3-2e5ee68588a7
IXTA96P085T-TRL
Виробник: IXYS
Description: MOSFET P-CH 85V 96A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 48A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
на замовлення 1734 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+607.53 грн
10+399.30 грн
100+294.17 грн
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IXTY12N06TTRL
IXTY12N06TTRL
Виробник: IXYS
Description: MOSFET N-CH 60V 12A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 6A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
IXTY12N06TTRL
IXTY12N06TTRL
Виробник: IXYS
Description: MOSFET N-CH 60V 12A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 6A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
товару немає в наявності
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CLA100PD1200NA Littelfuse-Power-Semiconductors-CLA100PD1200NA-Datasheet?assetguid=3c99ebf3-0787-4f96-8215-5f6801302969
CLA100PD1200NA
Виробник: IXYS
Description: SCR MODULE 1.2KV 150A SOT-227-4
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1620A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 100 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 150 A
Voltage - Off State: 1.2 kV
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
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