| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IXTA44P15T-TRL | IXYS |
Description: MOSFET P-CH 150V 44A TO263Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V Power Dissipation (Max): 298W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V |
на замовлення 23540 шт: термін постачання 21-31 дні (днів) |
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IXTA96P085T-TRL | IXYS |
Description: MOSFET P-CH 85V 96A TO263Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 96A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 48A, 10V Power Dissipation (Max): 298W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 85 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
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IXTA96P085T-TRL | IXYS |
Description: MOSFET P-CH 85V 96A TO263Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 96A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 48A, 10V Power Dissipation (Max): 298W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 85 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V |
на замовлення 2327 шт: термін постачання 21-31 дні (днів) |
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IXTY12N06TTRL | IXYS |
Description: MOSFET N-CH 60V 12A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 6A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 4V @ 25µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTY12N06TTRL | IXYS |
Description: MOSFET N-CH 60V 12A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 6A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 4V @ 25µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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CLA100PD1200NA | IXYS |
Description: SCR MODULE 1.2KV 150A SOT-227-4Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis, Stud Mount Operating Temperature: -40°C ~ 150°C (TJ) Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 100 mA Current - Gate Trigger (Igt) (Max): 50 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1620A Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 100 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Part Status: Active Current - On State (It (RMS)) (Max): 150 A Voltage - Off State: 1.2 kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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CLA110MB1200NA | IXYS |
Description: SCR MODULE 1.2KV 110A SOT-227-4Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis, Stud Mount Operating Temperature: -40°C ~ 150°C (TJ) Structure: 1-Phase Controller - All SCRs Current - Hold (Ih) (Max): 100 mA Current - Gate Trigger (Igt) (Max): 40 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1100A, 1190A Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 50 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Part Status: Active Current - On State (It (RMS)) (Max): 110 A Voltage - Off State: 1.2 kV |
на замовлення 128 шт: термін постачання 21-31 дні (днів) |
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CLA30E1200HB | IXYS |
Description: SCR 1.2KV 47A TO-247ADPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: -40°C ~ 150°C Current - Hold (Ih) (Max): 60 mA Current - Gate Trigger (Igt) (Max): 28 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 300A, 325A Current - On State (It (AV)) (Max): 30 A Voltage - Gate Trigger (Vgt) (Max): 1.3 V Voltage - On State (Vtm) (Max): 1.56 V Current - Off State (Max): 10 µA Supplier Device Package: TO-247AD Current - On State (It (RMS)) (Max): 47 A Voltage - Off State: 1.2 kV |
на замовлення 141 шт: термін постачання 21-31 дні (днів) |
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C0E1200PBLA3 | IXYS |
Description: SCR 1.2KV 47A TO220AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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CLA30E1200PC | IXYS |
Description: THYRISTOR PHASE 1200V TO-263 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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CLA40P1200FC | IXYS |
Description: SCR MODULE 1.2KV 63A I4-PACPackaging: Tube Package / Case: i4-Pac™-5 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 100 mA Current - Gate Trigger (Igt) (Max): 50 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 650A, 700A Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 40 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Current - On State (It (RMS)) (Max): 63 A Voltage - Off State: 1.2 kV |
на замовлення 178 шт: термін постачання 21-31 дні (днів) |
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CLA5E1200UC | IXYS |
Description: THYRISTOR PHASE 1200V TO-252 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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CLA60MT1200NHB | IXYS |
Description: TRIAC 1.2KV 66A TO-247 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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CLA60MT1200NTZ-TUB | IXYS |
Description: TRIAC 1.2KV 66A TO-268AA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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CLA60PD1200NA | IXYS |
Description: SCR MODULE 1.2KV 94A SOT-227-4Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis, Stud Mount Operating Temperature: -40°C ~ 150°C (TJ) Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 100 mA Current - Gate Trigger (Igt) (Max): 40 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1100A, 1190A Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 60 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Current - On State (It (RMS)) (Max): 94 A Voltage - Off State: 1.2 kV |
на замовлення 88 шт: термін постачання 21-31 дні (днів) |
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CLA80E1200HF | IXYS |
Description: SCR 1.2KV 126A PLUS247-3Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: -40°C ~ 150°C Current - Hold (Ih) (Max): 100 mA Current - Gate Trigger (Igt) (Max): 38 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 900A, 970A Current - On State (It (AV)) (Max): 80 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Voltage - On State (Vtm) (Max): 1.77 V Current - Off State (Max): 50 µA Supplier Device Package: PLUS247™-3 Part Status: Active Current - On State (It (RMS)) (Max): 126 A Voltage - Off State: 1.2 kV |
на замовлення 9 шт: термін постачання 21-31 дні (днів) |
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| CMA30P1600FC | IXYS |
Description: MOD THYRISTOR DUAL 1600V I4-PAC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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CMA50P1600FC | IXYS |
Description: SCR MODULE 1.6KV 79A I4-PACPackaging: Tube Package / Case: i4-Pac™-5 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 100 mA Current - Gate Trigger (Igt) (Max): 80 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 720A, 780A Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 50 A Voltage - Gate Trigger (Vgt) (Max): 1.4 V Current - On State (It (RMS)) (Max): 79 A Voltage - Off State: 1.6 kV |
на замовлення 248 шт: термін постачання 21-31 дні (днів) |
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CMA80PD1600NA | IXYS |
Description: MOD THYRISTOR DUAL 1600V SOT-227Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 100 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1070A, 1160A Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 80 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Current - On State (It (RMS)) (Max): 126 A Voltage - Off State: 1.6 kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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CS20-25MOT1 | IXYS |
Description: THYRISTOR PHASE 2500V TO-263AA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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DH2x60-18A | IXYS |
Description: DIODE MOD GP 1800V 60A SOT227BPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 230 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: SOT-227B Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1800 V Voltage - Forward (Vf) (Max) @ If: 2.01 V @ 60 A Current - Reverse Leakage @ Vr: 200 µA @ 1800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| DH2x61-16A | IXYS |
Description: DIODE MODULE 1.6KV 60A SOT227B |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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DH60-14A | IXYS |
Description: DIODE GEN PURP 1.4KV 60A TO247AD |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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DH60-16A | IXYS |
Description: DIODE STANDARD 1600V 60A TO247ADPackaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 230 ns Technology: Standard Capacitance @ Vr, F: 32pF @ 1200V, 1MHz Current - Average Rectified (Io): 60A Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 2.04 V @ 60 A Current - Reverse Leakage @ Vr: 200 µA @ 1400 V |
на замовлення 723 шт: термін постачання 21-31 дні (днів) |
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DHG10I1800PA | IXYS |
Description: DIODE GEN PURP 1.8KV 10A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Capacitance @ Vr, F: 3pF @ 900V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1800 V Voltage - Forward (Vf) (Max) @ If: 2.23 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 1800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| DLA100B1200LB | IXYS |
Description: BRIDGE RECT 1P 1.2KV 132A SMPD.B |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| DLA100B1200LB-TRR | IXYS |
Description: BRIDGE RECT 1P 1.2KV 132A SMPD.B |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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DLA20IM800PC-TUB | IXYS |
Description: DIODE GEN PURP 800V 20A TO263AAPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 4pF @ 400V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-263AA Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
на замовлення 1039 шт: термін постачання 21-31 дні (днів) |
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DLA40IM800PC | IXYS |
Description: DIODE GEN PURP 800V 40A TO263 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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DLA5P800UC | IXYS |
Description: DIODE ARRAY GP 800V 5A TO252 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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DLA60I1200HA | IXYS |
Description: DIODE GEN PURP 1.2KV 60A TO247ADPackaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 33pF @ 400V, 1MHz Current - Average Rectified (Io): 60A Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 60 A Current - Reverse Leakage @ Vr: 30 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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DMA10I1600PA | IXYS |
Description: DIODE GEN PURP 1.6KV 10A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 4pF @ 400V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 1600 V |
на замовлення 299 шт: термін постачання 21-31 дні (днів) |
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DMA150E1600NA | IXYS |
Description: DIODE STD 1600V 150A SOT227BPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 60pF @ 400V, 1MHz Current - Average Rectified (Io): 150A Supplier Device Package: SOT-227B Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 150 A Current - Reverse Leakage @ Vr: 200 µA @ 1600 V |
на замовлення 170 шт: термін постачання 21-31 дні (днів) |
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DMA150YA1600NA | IXYS |
Description: DIODE MOD GP 1600V 150A SOT227BPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 3 Common Anode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: SOT-227B Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 50 A Current - Reverse Leakage @ Vr: 100 µA @ 1600 V |
на замовлення 58 шт: термін постачання 21-31 дні (днів) |
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DMA150YC1600NA | IXYS |
Description: DIODE MOD GP 1600V 150A SOT227BPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 3 Common Cathode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: SOT-227B Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 50 A Current - Reverse Leakage @ Vr: 100 µA @ 1600 V |
на замовлення 192 шт: термін постачання 21-31 дні (днів) |
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| DMA30E1800HA | IXYS |
Description: DIODE GEN PURP 1800V 30A TO247 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| DMA90U1800LB | IXYS |
Description: DIODE RECTIFER TRIPLE 1800V SMPD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| DNA30E2200FE | IXYS |
Description: DIODE GEN PURP 2.2KV 30A I4-PACPackaging: Tube Package / Case: TO-251-2, IPAK Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 7pF @ 700V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: i4-PAC Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 2200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A Current - Reverse Leakage @ Vr: 40 µA @ 2200 V |
на замовлення 227 шт: термін постачання 21-31 дні (днів) |
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DNA30E2200PA | IXYS |
Description: DIODE GEN PURP 2.2KV 30A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 7pF @ 700V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 2200 V Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A Current - Reverse Leakage @ Vr: 40 µA @ 2200 V |
на замовлення 612 шт: термін постачання 21-31 дні (днів) |
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DNA30E2200PC | IXYS |
Description: DIODE GEN PURP 2.2KV 30A TO263 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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DNA30E2200PC-TUB | IXYS |
Description: DIODE GEN PURP 2.2KV 30A TO263 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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DNA30EM2200PC | IXYS |
Description: DIODE GEN PURP 2.2KV 30A TO263 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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DPF30I300PA | IXYS |
Description: DIODE GEN PURP 300V 30A TO220AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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DPF60C300HB | IXYS |
Description: DIODE ARRAY GP 300V 30A TO247AD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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DPF80C200HB | IXYS |
Description: DIODE ARRAY GP 200V 40A TO247AD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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DPG10P400PJ | IXYS |
Description: DIODE ARRAY 400V 10A ISOPLUS220 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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DPG20C400PC | IXYS |
Description: DIODE ARRAY GP 400V 10A TO263 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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DPG30I400HA | IXYS |
Description: DIODE GEN PURP 400V 30A TO247Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Standard Capacitance @ Vr, F: 32pF @ 200V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-247 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 30 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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DPG30IM300PC | IXYS |
Description: DIODE GEN PURP 300V 30A TO263 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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DPG30P300PJ | IXYS |
Description: DIODE ARR GP 300V 30A ISOPLUS220Packaging: Tube Package / Case: ISOPLUS220™ Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: ISOPLUS220™ Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 30 A Current - Reverse Leakage @ Vr: 1 µA @ 300 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
DPG80C300HB | IXYS |
Description: DIODE ARRAY GP 300V 40A TO247ADPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 40A Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 40 A Current - Reverse Leakage @ Vr: 1 µA @ 300 V |
на замовлення 1930 шт: термін постачання 21-31 дні (днів) |
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DPG80C400HB | IXYS |
Description: DIODE ARRAY GP 400V 40A TO247ADPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 40A Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 40 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
на замовлення 290 шт: термін постачання 21-31 дні (днів) |
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DSA10C150PB | IXYS |
Description: DIODE ARRAY SCHOTTKY 150V TO220 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| DSA120X150LB | IXYS |
Description: DIODE ARRAY SCHOTTKY 150V SMPD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
|
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DSA120X150LB-TRR | IXYS |
Description: DIODE ARRAY SCHOTTKY 150V SMPDPackaging: Tape & Reel (TR) Package / Case: 9-SMD Module Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 75A Supplier Device Package: ISOPLUS-SMPD™.B Operating Temperature - Junction: -55°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 60 A Current - Reverse Leakage @ Vr: 1 mA @ 150 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
DSA15IM200UC | IXYS |
Description: DIODE SCHOTTKY 200V 15A TO252 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
DSA240X150NA | IXYS |
Description: DIODE MOD SCHOTTKY 150V SOT227BPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: No Recovery Time > 500mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 120A Supplier Device Package: SOT-227B Operating Temperature - Junction: -40°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 120 A Current - Reverse Leakage @ Vr: 4 mA @ 150 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
DSA240X200NA | IXYS |
Description: DIODE MOD SCHOTTKY 200V SOT227BPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: No Recovery Time > 500mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 120A Supplier Device Package: SOT-227B Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 120 A Current - Reverse Leakage @ Vr: 4 mA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
DSA300I100NA | IXYS |
Description: DIODE SCHOTTKY 100V 300A SOT227B |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
DSA300I200NA | IXYS |
Description: DIODE SCHOTTKY 200V 300A SOT227B |
товару немає в наявності |
В кошику од. на суму грн. |
| IXTA44P15T-TRL |
![]() |
Виробник: IXYS
Description: MOSFET P-CH 150V 44A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V
Description: MOSFET P-CH 150V 44A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V
на замовлення 23540 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 558.75 грн |
| 10+ | 364.94 грн |
| 100+ | 278.59 грн |
| IXTA96P085T-TRL |
![]() |
Виробник: IXYS
Description: MOSFET P-CH 85V 96A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 48A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
Description: MOSFET P-CH 85V 96A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 48A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 240.71 грн |
| IXTA96P085T-TRL |
![]() |
Виробник: IXYS
Description: MOSFET P-CH 85V 96A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 48A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
Description: MOSFET P-CH 85V 96A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 48A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
на замовлення 2327 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 569.02 грн |
| 10+ | 371.61 грн |
| 100+ | 283.72 грн |
| IXTY12N06TTRL |
Виробник: IXYS
Description: MOSFET N-CH 60V 12A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 6A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
Description: MOSFET N-CH 60V 12A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 6A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IXTY12N06TTRL |
Виробник: IXYS
Description: MOSFET N-CH 60V 12A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 6A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
Description: MOSFET N-CH 60V 12A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 6A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| CLA100PD1200NA |
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Виробник: IXYS
Description: SCR MODULE 1.2KV 150A SOT-227-4
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1620A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 100 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 150 A
Voltage - Off State: 1.2 kV
Description: SCR MODULE 1.2KV 150A SOT-227-4
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1620A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 100 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 150 A
Voltage - Off State: 1.2 kV
товару немає в наявності
В кошику
од. на суму грн.
| CLA110MB1200NA |
![]() |
Виробник: IXYS
Description: SCR MODULE 1.2KV 110A SOT-227-4
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: 1-Phase Controller - All SCRs
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1100A, 1190A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 50 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 110 A
Voltage - Off State: 1.2 kV
Description: SCR MODULE 1.2KV 110A SOT-227-4
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: 1-Phase Controller - All SCRs
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1100A, 1190A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 50 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 110 A
Voltage - Off State: 1.2 kV
на замовлення 128 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1874.75 грн |
| 10+ | 1311.43 грн |
| 100+ | 1088.37 грн |
| CLA30E1200HB |
![]() |
Виробник: IXYS
Description: SCR 1.2KV 47A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 28 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 300A, 325A
Current - On State (It (AV)) (Max): 30 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.56 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-247AD
Current - On State (It (RMS)) (Max): 47 A
Voltage - Off State: 1.2 kV
Description: SCR 1.2KV 47A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 28 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 300A, 325A
Current - On State (It (AV)) (Max): 30 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.56 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-247AD
Current - On State (It (RMS)) (Max): 47 A
Voltage - Off State: 1.2 kV
на замовлення 141 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 404.73 грн |
| 30+ | 219.73 грн |
| 120+ | 182.19 грн |
| C0E1200PBLA3 |
![]() |
Виробник: IXYS
Description: SCR 1.2KV 47A TO220AB
Description: SCR 1.2KV 47A TO220AB
товару немає в наявності
В кошику
од. на суму грн.
| CLA30E1200PC |
![]() |
Виробник: IXYS
Description: THYRISTOR PHASE 1200V TO-263
Description: THYRISTOR PHASE 1200V TO-263
товару немає в наявності
В кошику
од. на суму грн.
| CLA40P1200FC |
![]() |
Виробник: IXYS
Description: SCR MODULE 1.2KV 63A I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 650A, 700A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 40 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 63 A
Voltage - Off State: 1.2 kV
Description: SCR MODULE 1.2KV 63A I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 650A, 700A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 40 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 63 A
Voltage - Off State: 1.2 kV
на замовлення 178 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1121.77 грн |
| 25+ | 677.17 грн |
| 100+ | 581.40 грн |
| CLA5E1200UC |
![]() |
Виробник: IXYS
Description: THYRISTOR PHASE 1200V TO-252
Description: THYRISTOR PHASE 1200V TO-252
товару немає в наявності
В кошику
од. на суму грн.
| CLA60MT1200NHB |
![]() |
Виробник: IXYS
Description: TRIAC 1.2KV 66A TO-247
Description: TRIAC 1.2KV 66A TO-247
товару немає в наявності
В кошику
од. на суму грн.
| CLA60MT1200NTZ-TUB |
![]() |
Виробник: IXYS
Description: TRIAC 1.2KV 66A TO-268AA
Description: TRIAC 1.2KV 66A TO-268AA
товару немає в наявності
В кошику
од. на суму грн.
| CLA60PD1200NA |
![]() |
Виробник: IXYS
Description: SCR MODULE 1.2KV 94A SOT-227-4
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1100A, 1190A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 60 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 94 A
Voltage - Off State: 1.2 kV
Description: SCR MODULE 1.2KV 94A SOT-227-4
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1100A, 1190A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 60 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 94 A
Voltage - Off State: 1.2 kV
на замовлення 88 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2338.52 грн |
| 10+ | 1656.76 грн |
| CLA80E1200HF |
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Виробник: IXYS
Description: SCR 1.2KV 126A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 38 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 900A, 970A
Current - On State (It (AV)) (Max): 80 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.77 V
Current - Off State (Max): 50 µA
Supplier Device Package: PLUS247™-3
Part Status: Active
Current - On State (It (RMS)) (Max): 126 A
Voltage - Off State: 1.2 kV
Description: SCR 1.2KV 126A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 38 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 900A, 970A
Current - On State (It (AV)) (Max): 80 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.77 V
Current - Off State (Max): 50 µA
Supplier Device Package: PLUS247™-3
Part Status: Active
Current - On State (It (RMS)) (Max): 126 A
Voltage - Off State: 1.2 kV
на замовлення 9 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 776.09 грн |
| CMA30P1600FC |
![]() |
Виробник: IXYS
Description: MOD THYRISTOR DUAL 1600V I4-PAC
Description: MOD THYRISTOR DUAL 1600V I4-PAC
товару немає в наявності
В кошику
од. на суму грн.
| CMA50P1600FC |
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Виробник: IXYS
Description: SCR MODULE 1.6KV 79A I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 80 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 720A, 780A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 50 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 79 A
Voltage - Off State: 1.6 kV
Description: SCR MODULE 1.6KV 79A I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 80 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 720A, 780A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 50 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 79 A
Voltage - Off State: 1.6 kV
на замовлення 248 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1310.02 грн |
| 25+ | 801.62 грн |
| 100+ | 692.38 грн |
| CMA80PD1600NA |
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Виробник: IXYS
Description: MOD THYRISTOR DUAL 1600V SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1070A, 1160A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 80 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 126 A
Voltage - Off State: 1.6 kV
Description: MOD THYRISTOR DUAL 1600V SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1070A, 1160A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 80 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 126 A
Voltage - Off State: 1.6 kV
товару немає в наявності
В кошику
од. на суму грн.
| CS20-25MOT1 |
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Виробник: IXYS
Description: THYRISTOR PHASE 2500V TO-263AA
Description: THYRISTOR PHASE 2500V TO-263AA
товару немає в наявності
В кошику
од. на суму грн.
| DH2x60-18A |
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Виробник: IXYS
Description: DIODE MOD GP 1800V 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 230 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 2.01 V @ 60 A
Current - Reverse Leakage @ Vr: 200 µA @ 1800 V
Description: DIODE MOD GP 1800V 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 230 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 2.01 V @ 60 A
Current - Reverse Leakage @ Vr: 200 µA @ 1800 V
товару немає в наявності
В кошику
од. на суму грн.
| DH2x61-16A |
![]() |
Виробник: IXYS
Description: DIODE MODULE 1.6KV 60A SOT227B
Description: DIODE MODULE 1.6KV 60A SOT227B
товару немає в наявності
В кошику
од. на суму грн.
| DH60-14A |
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Виробник: IXYS
Description: DIODE GEN PURP 1.4KV 60A TO247AD
Description: DIODE GEN PURP 1.4KV 60A TO247AD
на замовлення 20 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 962.62 грн |
| 10+ | 838.06 грн |
| DH60-16A |
![]() |
Виробник: IXYS
Description: DIODE STANDARD 1600V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 230 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 1200V, 1MHz
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 2.04 V @ 60 A
Current - Reverse Leakage @ Vr: 200 µA @ 1400 V
Description: DIODE STANDARD 1600V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 230 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 1200V, 1MHz
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 2.04 V @ 60 A
Current - Reverse Leakage @ Vr: 200 µA @ 1400 V
на замовлення 723 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 796.62 грн |
| 30+ | 476.58 грн |
| 120+ | 460.70 грн |
| 510+ | 414.39 грн |
| DHG10I1800PA |
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Виробник: IXYS
Description: DIODE GEN PURP 1.8KV 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 900V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 2.23 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1800 V
Description: DIODE GEN PURP 1.8KV 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 900V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 2.23 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1800 V
товару немає в наявності
В кошику
од. на суму грн.
| DLA100B1200LB |
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Виробник: IXYS
Description: BRIDGE RECT 1P 1.2KV 132A SMPD.B
Description: BRIDGE RECT 1P 1.2KV 132A SMPD.B
товару немає в наявності
В кошику
од. на суму грн.
| DLA100B1200LB-TRR |
![]() |
Виробник: IXYS
Description: BRIDGE RECT 1P 1.2KV 132A SMPD.B
Description: BRIDGE RECT 1P 1.2KV 132A SMPD.B
товару немає в наявності
В кошику
од. на суму грн.
| DLA20IM800PC-TUB |
![]() |
Виробник: IXYS
Description: DIODE GEN PURP 800V 20A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: DIODE GEN PURP 800V 20A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 1039 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 251.56 грн |
| 50+ | 132.36 грн |
| 100+ | 121.03 грн |
| 500+ | 94.68 грн |
| 1000+ | 90.33 грн |
| DLA40IM800PC |
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Виробник: IXYS
Description: DIODE GEN PURP 800V 40A TO263
Description: DIODE GEN PURP 800V 40A TO263
товару немає в наявності
В кошику
од. на суму грн.
| DLA5P800UC |
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Виробник: IXYS
Description: DIODE ARRAY GP 800V 5A TO252
Description: DIODE ARRAY GP 800V 5A TO252
товару немає в наявності
В кошику
од. на суму грн.
| DLA60I1200HA |
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Виробник: IXYS
Description: DIODE GEN PURP 1.2KV 60A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 33pF @ 400V, 1MHz
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 60 A
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 60A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 33pF @ 400V, 1MHz
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 60 A
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
товару немає в наявності
В кошику
од. на суму грн.
| DMA10I1600PA |
![]() |
Виробник: IXYS
Description: DIODE GEN PURP 1.6KV 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
Description: DIODE GEN PURP 1.6KV 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
на замовлення 299 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 151.45 грн |
| 50+ | 117.17 грн |
| 100+ | 96.40 грн |
| DMA150E1600NA |
![]() |
Виробник: IXYS
Description: DIODE STD 1600V 150A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 60pF @ 400V, 1MHz
Current - Average Rectified (Io): 150A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 150 A
Current - Reverse Leakage @ Vr: 200 µA @ 1600 V
Description: DIODE STD 1600V 150A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 60pF @ 400V, 1MHz
Current - Average Rectified (Io): 150A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 150 A
Current - Reverse Leakage @ Vr: 200 µA @ 1600 V
на замовлення 170 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2540.46 грн |
| 10+ | 1948.44 грн |
| DMA150YA1600NA |
![]() |
Виробник: IXYS
Description: DIODE MOD GP 1600V 150A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 3 Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 50 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
Description: DIODE MOD GP 1600V 150A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 3 Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 50 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
на замовлення 58 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1795.18 грн |
| DMA150YC1600NA |
![]() |
Виробник: IXYS
Description: DIODE MOD GP 1600V 150A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 3 Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 50 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
Description: DIODE MOD GP 1600V 150A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 3 Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 50 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
на замовлення 192 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2477.14 грн |
| 10+ | 1815.62 грн |
| 100+ | 1724.47 грн |
| DMA30E1800HA |
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Виробник: IXYS
Description: DIODE GEN PURP 1800V 30A TO247
Description: DIODE GEN PURP 1800V 30A TO247
товару немає в наявності
В кошику
од. на суму грн.
| DMA90U1800LB |
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Виробник: IXYS
Description: DIODE RECTIFER TRIPLE 1800V SMPD
Description: DIODE RECTIFER TRIPLE 1800V SMPD
товару немає в наявності
В кошику
од. на суму грн.
| DNA30E2200FE |
![]() |
Виробник: IXYS
Description: DIODE GEN PURP 2.2KV 30A I4-PAC
Packaging: Tube
Package / Case: TO-251-2, IPAK
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: i4-PAC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
Description: DIODE GEN PURP 2.2KV 30A I4-PAC
Packaging: Tube
Package / Case: TO-251-2, IPAK
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: i4-PAC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
на замовлення 227 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 710.20 грн |
| 25+ | 545.53 грн |
| 100+ | 488.10 грн |
| DNA30E2200PA |
![]() |
Виробник: IXYS
Description: DIODE GEN PURP 2.2KV 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
Description: DIODE GEN PURP 2.2KV 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
на замовлення 612 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 359.38 грн |
| 50+ | 274.56 грн |
| 100+ | 235.33 грн |
| 500+ | 196.31 грн |
| DNA30E2200PC |
![]() |
Виробник: IXYS
Description: DIODE GEN PURP 2.2KV 30A TO263
Description: DIODE GEN PURP 2.2KV 30A TO263
товару немає в наявності
В кошику
од. на суму грн.
| DNA30E2200PC-TUB |
![]() |
Виробник: IXYS
Description: DIODE GEN PURP 2.2KV 30A TO263
Description: DIODE GEN PURP 2.2KV 30A TO263
товару немає в наявності
В кошику
од. на суму грн.
| DNA30EM2200PC |
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Виробник: IXYS
Description: DIODE GEN PURP 2.2KV 30A TO263
Description: DIODE GEN PURP 2.2KV 30A TO263
товару немає в наявності
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од. на суму грн.
| DPF30I300PA |
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Виробник: IXYS
Description: DIODE GEN PURP 300V 30A TO220AC
Description: DIODE GEN PURP 300V 30A TO220AC
товару немає в наявності
В кошику
од. на суму грн.
| DPF60C300HB |
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Виробник: IXYS
Description: DIODE ARRAY GP 300V 30A TO247AD
Description: DIODE ARRAY GP 300V 30A TO247AD
товару немає в наявності
В кошику
од. на суму грн.
| DPF80C200HB |
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Виробник: IXYS
Description: DIODE ARRAY GP 200V 40A TO247AD
Description: DIODE ARRAY GP 200V 40A TO247AD
товару немає в наявності
В кошику
од. на суму грн.
| DPG10P400PJ |
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Виробник: IXYS
Description: DIODE ARRAY 400V 10A ISOPLUS220
Description: DIODE ARRAY 400V 10A ISOPLUS220
товару немає в наявності
В кошику
од. на суму грн.
| DPG20C400PC |
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Виробник: IXYS
Description: DIODE ARRAY GP 400V 10A TO263
Description: DIODE ARRAY GP 400V 10A TO263
товару немає в наявності
В кошику
од. на суму грн.
| DPG30I400HA |
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Виробник: IXYS
Description: DIODE GEN PURP 400V 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 200V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Description: DIODE GEN PURP 400V 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 200V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| DPG30IM300PC |
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Виробник: IXYS
Description: DIODE GEN PURP 300V 30A TO263
Description: DIODE GEN PURP 300V 30A TO263
товару немає в наявності
В кошику
од. на суму грн.
| DPG30P300PJ |
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Виробник: IXYS
Description: DIODE ARR GP 300V 30A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ISOPLUS220™
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
Description: DIODE ARR GP 300V 30A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ISOPLUS220™
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
товару немає в наявності
В кошику
од. на суму грн.
| DPG80C300HB |
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Виробник: IXYS
Description: DIODE ARRAY GP 300V 40A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 40 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
Description: DIODE ARRAY GP 300V 40A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 40 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
на замовлення 1930 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 634.90 грн |
| 10+ | 552.39 грн |
| 100+ | 457.34 грн |
| 500+ | 373.74 грн |
| 1000+ | 351.15 грн |
| DPG80C400HB |
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Виробник: IXYS
Description: DIODE ARRAY GP 400V 40A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 40 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Description: DIODE ARRAY GP 400V 40A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 40 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
на замовлення 290 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 509.12 грн |
| 30+ | 375.73 грн |
| DSA10C150PB |
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Виробник: IXYS
Description: DIODE ARRAY SCHOTTKY 150V TO220
Description: DIODE ARRAY SCHOTTKY 150V TO220
товару немає в наявності
В кошику
од. на суму грн.
| DSA120X150LB |
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Виробник: IXYS
Description: DIODE ARRAY SCHOTTKY 150V SMPD
Description: DIODE ARRAY SCHOTTKY 150V SMPD
товару немає в наявності
В кошику
од. на суму грн.
| DSA120X150LB-TRR |
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Виробник: IXYS
Description: DIODE ARRAY SCHOTTKY 150V SMPD
Packaging: Tape & Reel (TR)
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 75A
Supplier Device Package: ISOPLUS-SMPD™.B
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
Description: DIODE ARRAY SCHOTTKY 150V SMPD
Packaging: Tape & Reel (TR)
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 75A
Supplier Device Package: ISOPLUS-SMPD™.B
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
товару немає в наявності
В кошику
од. на суму грн.
| DSA15IM200UC |
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Виробник: IXYS
Description: DIODE SCHOTTKY 200V 15A TO252
Description: DIODE SCHOTTKY 200V 15A TO252
товару немає в наявності
В кошику
од. на суму грн.
| DSA240X150NA |
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Виробник: IXYS
Description: DIODE MOD SCHOTTKY 150V SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 150 V
Description: DIODE MOD SCHOTTKY 150V SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 150 V
товару немає в наявності
В кошику
од. на суму грн.
| DSA240X200NA |
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Виробник: IXYS
Description: DIODE MOD SCHOTTKY 200V SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 200 V
Description: DIODE MOD SCHOTTKY 200V SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 200 V
товару немає в наявності
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| DSA300I100NA |
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Виробник: IXYS
Description: DIODE SCHOTTKY 100V 300A SOT227B
Description: DIODE SCHOTTKY 100V 300A SOT227B
товару немає в наявності
В кошику
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| DSA300I200NA |
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Виробник: IXYS
Description: DIODE SCHOTTKY 200V 300A SOT227B
Description: DIODE SCHOTTKY 200V 300A SOT227B
товару немає в наявності
В кошику
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