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IXGX28N140B3H1 IXGX28N140B3H1 IXYS Description: IGBT 1400V 60A 300W PLUS247
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IXGX320N60B3 IXGX320N60B3 IXYS littelfuse-discrete-igbts-ixg-320n60b3-datasheet?assetguid=448e088e-56ea-48d2-b291-c14c7820b437 Description: IGBT PT 600V 500A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 44ns/250ns
Switching Energy: 2.7mJ (on), 3.5mJ (off)
Test Condition: 480V, 100A, 1Ohm, 15V
Gate Charge: 585 nC
Part Status: Active
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 1200 A
Power - Max: 1700 W
на замовлення 223 шт:
термін постачання 21-31 дні (днів)
1+2499.39 грн
30+1599.26 грн
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IXGX55N120A3H1 IXGX55N120A3H1 IXYS media?resourcetype=datasheets&itemid=0b246b35-b876-4e29-9349-439823204dc3&filename=littelfuse_discrete_igbts_pt_ixg_55n120a3h1_datasheet.pdf Description: IGBT 1200V 125A 460W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 55A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/365ns
Switching Energy: 5.1mJ (on), 13.3mJ (off)
Test Condition: 960V, 55A, 3Ohm, 15V
Gate Charge: 185 nC
Current - Collector (Ic) (Max): 125 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 460 W
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IXGX64N60B3D1 IXGX64N60B3D1 IXYS Description: IGBT 600V 460W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/138ns
Switching Energy: 1.5mJ (on), 1mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 168 nC
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 460 W
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IXGX82N120A3 IXGX82N120A3 IXYS Description: IGBT 1200V 260A 1250W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 82A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 34ns/265ns
Switching Energy: 5.5mJ (on), 12.5mJ (off)
Test Condition: 600V, 80A, 2Ohm, 15V
Gate Charge: 340 nC
Part Status: Active
Current - Collector (Ic) (Max): 260 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 580 A
Power - Max: 1250 W
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IXGX82N120B3 IXGX82N120B3 IXYS Description: IGBT 1200V 230A 1250W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/210ns
Switching Energy: 5mJ (on), 3.3mJ (off)
Test Condition: 600V, 80A, 2Ohm, 15V
Gate Charge: 350 nC
Part Status: Active
Current - Collector (Ic) (Max): 230 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 500 A
Power - Max: 1250 W
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IXTA15P15T IXTA15P15T IXYS DS100292A(IXTA-TP-TY15P15T).pdf Description: MOSFET P-CH 150V 15A TO-263
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IXTA26P10T IXTA26P10T IXYS DS100291A(IXTA-TP-TY26P10T).pdf Description: MOSFET P-CH 100V 26A TO-263
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IXTA460P2 IXTA460P2 IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_460p2_datasheet.pdf.pdf Description: MOSFET N-CH 500V 24A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 25 V
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IXTA48P05T IXTA48P05T IXYS littelfuse-discrete-mosfets-ixt-48p05t-datasheet?assetguid=62c140ac-c7df-4f51-9814-249b142e0b84 Description: MOSFET P-CH 50V 48A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 24A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V
на замовлення 3795 шт:
термін постачання 21-31 дні (днів)
2+299.05 грн
50+156.79 грн
100+153.73 грн
500+130.47 грн
1000+123.92 грн
Мінімальне замовлення: 2
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IXTH140P10T IXTH140P10T IXYS littelfuse_discrete_mosfets_p-channel_ixt_140p10t_datasheet.pdf.pdf Description: MOSFET P-CH 100V 140A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 70A, 10V
Power Dissipation (Max): 568W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 31400 pF @ 25 V
на замовлення 37 шт:
термін постачання 21-31 дні (днів)
1+1482.77 грн
10+1312.36 грн
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IXTH300N04T2 IXTH300N04T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixth300n04t2_datasheet.pdf.pdf Description: MOSFET N-CH 40V 300A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
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IXTH420N04T2 IXTH420N04T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixth420n04t2_datasheet.pdf.pdf Description: MOSFET N-CH 40V 420A TO247
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IXTH460P2 IXTH460P2 IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_460p2_datasheet.pdf.pdf Description: MOSFET N-CH 500V 24A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 25 V
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IXTH50N25T IXTH50N25T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_50n25t_datasheet.pdf.pdf Description: MOSFET N-CH 250V 50A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
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IXTJ6N150 IXYS DS100448A(IXTJ6N150).pdf Description: MOSFET N-CH 1500V 3A ISOTO-247
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IXTK20N150 IXTK20N150 IXYS 238_DS100424BIXTKTX20N150.pdf Description: MOSFET N-CH 1500V 20A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 10A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-264 (IXTK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 25 V
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IXTN120P20T IXTN120P20T IXYS littelfuse_discrete_mosfets_p-channel_ixtn120p20t_datasheet.pdf.pdf Description: MOSFET P-CH 200V 106A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 60A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 73000 pF @ 25 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+3769.78 грн
В кошику  од. на суму  грн.
IXTP02N120P IXTP02N120P IXYS littelfuse-discrete-mosfets-ixt-02n120p-datasheet?assetguid=28c53e8f-de75-400b-95e2-28ff1adfa0e0 Description: MOSFET N-CH 1200V 200MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 75Ohm @ 100mA, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 25 V
на замовлення 2939 шт:
термін постачання 21-31 дні (днів)
2+232.68 грн
50+112.56 грн
100+101.77 грн
500+77.77 грн
1000+72.07 грн
2000+67.59 грн
Мінімальне замовлення: 2
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IXTP05N100P IXTP05N100P IXYS littelfuse-discrete-mosfets-ixt-05n100p-datasheet?assetguid=96c672c8-2a09-4a39-a0da-772c2b944807 Description: MOSFET N-CH 1000V 500MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)
Rds On (Max) @ Id, Vgs: 30Ohm @ 250mA, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 25 V
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IXTP10P15T IXTP10P15T IXYS DS100290(IXTA-TP-TY10P15T).pdf Description: MOSFET P-CH 150V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
на замовлення 1556 шт:
термін постачання 21-31 дні (днів)
2+259.23 грн
50+197.34 грн
100+169.15 грн
500+141.11 грн
1000+120.82 грн
Мінімальне замовлення: 2
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IXTP1N80P IXTP1N80P IXYS DS100112(IXTA-TP-TU-TY1N80P).pdf Description: MOSFET N-CH 800V 1A TO-220
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IXTP460P2 IXTP460P2 IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_460p2_datasheet.pdf.pdf Description: MOSFET N-CH 500V 24A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 25 V
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IXTP48P05T IXTP48P05T IXYS littelfuse-discrete-mosfets-ixt-48p05t-datasheet?assetguid=62c140ac-c7df-4f51-9814-249b142e0b84 Description: MOSFET P-CH 50V 48A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 24A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V
на замовлення 1275 шт:
термін постачання 21-31 дні (днів)
1+329.50 грн
50+173.88 грн
100+158.44 грн
500+127.08 грн
1000+116.03 грн
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IXTP60N20T IXTP60N20T IXYS littelfuse-discrete-mosfets-ixt-60n20t-datasheet?assetguid=a2bc6b7d-dab8-4007-9c70-5b1fc95634b1 Description: MOSFET N-CH 200V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4530 pF @ 25 V
на замовлення 198 шт:
термін постачання 21-31 дні (днів)
1+460.68 грн
50+237.61 грн
100+217.74 грн
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IXTR120P20T IXTR120P20T IXYS littelfuse_discrete_mosfets_p-channel_ixtr120p20t_datasheet.pdf.pdf Description: MOSFET P-CH 200V 90A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 60A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 73000 pF @ 25 V
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IXTR140P10T IXTR140P10T IXYS littelfuse_discrete_mosfets_p-channel_ixtr140p10t_datasheet.pdf.pdf Description: MOSFET P-CH 100V 110A ISOPLUS247
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IXTR210P10T IXTR210P10T IXYS littelfuse_discrete_mosfets_p-channel_ixtr210p10t_datasheet.pdf.pdf Description: MOSFET P-CH 100V 195A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 105A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 69500 pF @ 25 V
на замовлення 540 шт:
термін постачання 21-31 дні (днів)
300+1741.08 грн
Мінімальне замовлення: 300
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IXTT110N10L2 IXTT110N10L2 IXYS PdfFile135152.pdf Description: MOSFET N-CH 100V 110A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 55A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
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IXTT440N055T2 IXTT440N055T2 IXYS littelfuse-discrete-mosfets-ixt-440n055t2-datasheet?assetguid=6586e5ca-cda3-411d-bbe5-f50ff4a13d25 Description: MOSFET N-CH 55V 440A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 440A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 1000W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 405 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25000 pF @ 25 V
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IXTT500N04T2 IXTT500N04T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_500n04t2_datasheet.pdf.pdf Description: MOSFET N-CH 40V 500A TO268
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IXTY10P15T IXTY10P15T IXYS DS100290(IXTA-TP-TY10P15T).pdf Description: MOSFET P-CH 150V 10A TO-252
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IXTY26P10T IXTY26P10T IXYS littelfuse_discrete_mosfets_p-channel_ixt_26p10t_datasheet.pdf.pdf Description: MOSFET P-CH 100V 26A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 13A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3820 pF @ 25 V
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IXTY32P05T IXTY32P05T IXYS DS99967C(IXTY-TA-TP32P05T).pdf Description: MOSFET P-CH 50V 32A TO-252
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IXXH30N60B3D1 IXXH30N60B3D1 IXYS DS100334BIXXH30N60B3D1.pdf Description: IGBT PT 600V 60A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 24A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/97ns
Switching Energy: 550µJ (on), 500µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 39 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 115 A
Power - Max: 270 W
на замовлення 547 шт:
термін постачання 21-31 дні (днів)
1+488.79 грн
30+270.93 грн
120+227.10 грн
510+183.33 грн
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IXXH50N60B3 IXXH50N60B3 IXYS littelfuse-discrete-igbts-ixx-50n60b3-datasheet?assetguid=0584ed69-861c-477c-9ed3-244c01c8d170 Description: IGBT PT 600V 120A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 27ns/100ns
Switching Energy: 670µJ (on), 740µJ (off)
Test Condition: 360V, 36A, 5Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
1+837.03 грн
30+486.80 грн
120+416.80 грн
510+374.67 грн
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IXXH50N60B3D1 IXXH50N60B3D1 IXYS DS100302BIXXH50N60B3D1.pdf Description: IGBT PT 600V 120A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 27ns/100ns
Switching Energy: 670µJ (on), 740µJ (off)
Test Condition: 360V, 36A, 5Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
на замовлення 582 шт:
термін постачання 21-31 дні (днів)
1+924.49 грн
30+542.19 грн
120+465.95 грн
510+426.17 грн
В кошику  од. на суму  грн.
IXXH75N60B3D1 IXXH75N60B3D1 IXYS DS100328BIXXH75N60B3D1.pdf Description: IGBT PT 600V 160A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 60A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 35ns/118ns
Switching Energy: 1.7mJ (on), 1.5mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 107 nC
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 750 W
на замовлення 198 шт:
термін постачання 21-31 дні (днів)
1+634.80 грн
30+359.81 грн
120+304.69 грн
В кошику  од. на суму  грн.
IXXH75N60C3 IXXH75N60C3 IXYS littelfuse-discrete-igbts-ixxh75n60c3-datasheet?assetguid=18b30bab-ce67-4b38-a8fd-bd1143f61ab4 Description: IGBT PT 600V 150A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 35ns/90ns
Switching Energy: 1.6mJ (on), 800µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 107 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 750 W
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IXXK200N60B3 IXXK200N60B3 IXYS DS100372AIXXKX200N60B3.pdf Description: IGBT PT 600V 380A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 48ns/160ns
Switching Energy: 2.85mJ (on), 2.9mJ (off)
Test Condition: 360V, 100A, 1Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 380 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 900 A
Power - Max: 1630 W
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IXXK200N60C3 IXXK200N60C3 IXYS Description: IGBT PT 600V 340A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 47ns/125ns
Switching Energy: 3mJ (on), 1.7mJ (off)
Test Condition: 360V, 100A, 1Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 340 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 900 A
Power - Max: 1630 W
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IXXR100N60B3H1 IXXR100N60B3H1 IXYS media?resourcetype=datasheets&itemid=613f1ae9-0731-4a6d-b1c2-52f5f0c7f673&filename=littelfuse_discrete_igbts_xpt_ixxr100n60b3h1_datasheet.pdf Description: IGBT 600V 145A 400W ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/120ns
Switching Energy: 1.9mJ (on), 2mJ (off)
Test Condition: 360V, 70A, 2Ohm, 15V
Gate Charge: 143 nC
Current - Collector (Ic) (Max): 145 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 440 A
Power - Max: 400 W
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
300+1187.73 грн
Мінімальне замовлення: 300
В кошику  од. на суму  грн.
IXXX100N60C3H1 IXXX100N60C3H1 IXYS media?resourcetype=datasheets&itemid=9922f041-1111-4aea-bb33-e69a6770637d&filename=littelfuse_discrete_igbts_xpt_ixx_100n60c3h1_datasheet.pdf Description: IGBT 600V 170A 695W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 70A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/90ns
Switching Energy: 2mJ (on), 950µJ (off)
Test Condition: 360V, 70A, 2Ohm, 15V
Gate Charge: 150 nC
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 340 A
Power - Max: 695 W
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IXYH24N90C3 IXYH24N90C3 IXYS littelfuse-discrete-igbts-ixbf9n160g-datasheet?assetguid=6360b46e-5017-4b38-bbef-9a125968ea41 Description: IGBT 900V 46A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/73ns
Switching Energy: 1.35mJ (on), 400µJ (off)
Test Condition: 450V, 24A, 10Ohm, 15V
Gate Charge: 40 nC
Part Status: Active
Current - Collector (Ic) (Max): 46 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 240 W
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IXYH30N120C3 IXYH30N120C3 IXYS littelfuse-discrete-igbts-ixy-30n120c3-datasheet?assetguid=2ea8c579-5c73-49da-91dd-e10580f9526d Description: IGBT 1200V 75A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 30A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 19ns/130ns
Switching Energy: 2.6mJ (on), 1.1mJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 69 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 145 A
Power - Max: 500 W
на замовлення 1230 шт:
термін постачання 21-31 дні (днів)
1+563.75 грн
30+316.40 грн
120+266.64 грн
510+221.48 грн
В кошику  од. на суму  грн.
IXYH30N120C3D1 IXYH30N120C3D1 IXYS media-3320177.pdf Description: IGBT 1200V 66A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 30A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 19ns/130ns
Switching Energy: 2.6mJ (on), 1.1mJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 69 nC
Part Status: Active
Current - Collector (Ic) (Max): 66 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 133 A
Power - Max: 416 W
на замовлення 1363 шт:
термін постачання 21-31 дні (днів)
1+749.58 грн
30+430.99 грн
120+367.17 грн
510+322.19 грн
В кошику  од. на суму  грн.
IXYH40N120C3 IXYH40N120C3 IXYS DS100416BIXYH40N120C3.pdf Description: IGBT 1200V 70A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 24ns/125ns
Switching Energy: 3.9mJ (on), 660µJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 85 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 115 A
Power - Max: 577 W
на замовлення 606 шт:
термін постачання 21-31 дні (днів)
1+720.69 грн
30+413.69 грн
120+352.20 грн
510+308.11 грн
В кошику  од. на суму  грн.
IXYH40N120C3D1 IXYH40N120C3D1 IXYS littelfuse-discrete-igbts-ixyh40n120c3d1-datasheet?assetguid=0a9184c9-b984-421b-b5a1-4ac88a5bd1cd Description: IGBT 1200V 64A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 24ns/125ns
Switching Energy: 3.9mJ (on), 660µJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 85 nC
Part Status: Active
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 480 W
на замовлення 1770 шт:
термін постачання 21-31 дні (днів)
1+855.77 грн
30+498.43 грн
120+427.10 грн
510+385.41 грн
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IXYK100N120C3 IXYK100N120C3 IXYS DS100404AIXYKX100N120C3.pdf Description: IGBT 1200V 188A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
Supplier Device Package: TO-264 (IXYK)
Td (on/off) @ 25°C: 32ns/123ns
Switching Energy: 6.5mJ (on), 2.9mJ (off)
Test Condition: 600V, 100A, 1Ohm, 15V
Gate Charge: 270 nC
Part Status: Active
Current - Collector (Ic) (Max): 188 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 490 A
Power - Max: 1150 W
на замовлення 256 шт:
термін постачання 21-31 дні (днів)
1+2016.07 грн
25+1287.82 грн
100+1221.73 грн
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IXYN100N120C3 IXYN100N120C3 IXYS littelfuse_discrete_igbts_xpt_ixyn100n120c3_datasheet.pdf.pdf Description: IGBT MOD 1200V 152A 830W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Active
Current - Collector (Ic) (Max): 152 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 830 W
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 6 nF @ 25 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+3575.36 грн
В кошику  од. на суму  грн.
IXYN100N120C3H1 IXYN100N120C3H1 IXYS littelfusediscreteigbtsxptixyn100n120c3h1data.pdf Description: IGBT MODULE 1200V 134A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Active
Current - Collector (Ic) (Max): 134 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 690 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 6 nF @ 25 V
на замовлення 1082 шт:
термін постачання 21-31 дні (днів)
1+2634.47 грн
10+1890.34 грн
100+1707.61 грн
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IXYN82N120C3 IXYN82N120C3 IXYS Description: IGBT MOD 1200V 105A 500W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Active
Current - Collector (Ic) (Max): 105 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 4.1 nF @ 25 V
на замовлення 290 шт:
термін постачання 21-31 дні (днів)
1+2183.94 грн
10+1547.93 грн
100+1344.22 грн
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IXYP30N120C3 IXYP30N120C3 IXYS littelfuse-discrete-igbts-ixy-30n120c3-datasheet?assetguid=2ea8c579-5c73-49da-91dd-e10580f9526d Description: IGBT 1200V 75A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 30A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 19ns/130ns
Switching Energy: 2.6mJ (on), 1.1mJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 69 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 145 A
Power - Max: 500 W
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IXYP8N90C3 IXYP8N90C3 IXYS media?resourcetype=datasheets&itemid=11D4BD5C-8AE2-405E-8BEC-58F631EF5FBE&filename=Littelfuse-Discrete-IGBTs-XPT-IXY-8N90C3-Datasheet.PDF Description: IGBT 900V 20A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 16ns/40ns
Switching Energy: 460µJ (on), 180µJ (off)
Test Condition: 450V, 8A, 30Ohm, 15V
Gate Charge: 13.3 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 125 W
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IXYP8N90C3D1 IXYP8N90C3D1 IXYS littelfuse-discrete-igbts-ixgh42n30c3-datasheet?assetguid=cfdebaeb-c0d6-454a-8b5e-9c212af484cf Description: IGBT 900V 20A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 114 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 16ns/40ns
Switching Energy: 460µJ (on), 180µJ (off)
Test Condition: 450V, 8A, 30Ohm, 15V
Gate Charge: 13.3 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 125 W
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IXYR100N120C3 IXYR100N120C3 IXYS littelfuse_discrete_igbts_xpt_ixyr100n120c3_datasheet.pdf.pdf Description: IGBT 1200V 104A 484W ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
Supplier Device Package: ISOPLUS247™
Td (on/off) @ 25°C: 32ns/123ns
Switching Energy: 6.5mJ (on), 2.9mJ (off)
Test Condition: 600V, 100A, 1Ohm, 15V
Gate Charge: 270 nC
Part Status: Active
Current - Collector (Ic) (Max): 104 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 484 W
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+2224.55 грн
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IXYX100N120C3 IXYX100N120C3 IXYS DS100404AIXYKX100N120C3.pdf Description: IGBT 1200V 188A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 32ns/123ns
Switching Energy: 6.5mJ (on), 2.9mJ (off)
Test Condition: 600V, 100A, 1Ohm, 15V
Gate Charge: 270 nC
Part Status: Active
Current - Collector (Ic) (Max): 188 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 490 A
Power - Max: 1150 W
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
1+2029.34 грн
30+1272.86 грн
120+1231.39 грн
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MMIX1T550N055T2 IXYS littelfuse_discrete_mosfets_smpd_packages_mmix1t550n055t2_datasheet.pdf.pdf Description: MOSFET N-CH 55V 550A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 550A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 24-SMPD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 595 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
1+3504.30 грн
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DSEI8-06AS-TRL DSEI8-06AS-TRL IXYS Littelfuse-Power-Semiconductors-DSEI8-06A-Datasheet?assetguid=e637c6ed-d932-4130-b9e4-8226a2821674 Description: DIODE STANDARD 600V 8A TO263AA
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
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DSEP40-03AS-TRL DSEP40-03AS-TRL IXYS media?resourcetype=datasheets&itemid=d5c9c212-3e77-4435-b031-6ff61a740ca1&filename=Littelfuse-Power-Semiconductors-DSEP40-03AS-Datasheet Description: DIODE STANDARD 300V 40A TO263AA
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 150V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.44 V @ 40 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
на замовлення 3628 шт:
термін постачання 21-31 дні (днів)
2+309.20 грн
10+217.37 грн
100+175.36 грн
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IXGX28N140B3H1
IXGX28N140B3H1
Виробник: IXYS
Description: IGBT 1400V 60A 300W PLUS247
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IXGX320N60B3 littelfuse-discrete-igbts-ixg-320n60b3-datasheet?assetguid=448e088e-56ea-48d2-b291-c14c7820b437
IXGX320N60B3
Виробник: IXYS
Description: IGBT PT 600V 500A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 44ns/250ns
Switching Energy: 2.7mJ (on), 3.5mJ (off)
Test Condition: 480V, 100A, 1Ohm, 15V
Gate Charge: 585 nC
Part Status: Active
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 1200 A
Power - Max: 1700 W
на замовлення 223 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2499.39 грн
30+1599.26 грн
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IXGX55N120A3H1 media?resourcetype=datasheets&itemid=0b246b35-b876-4e29-9349-439823204dc3&filename=littelfuse_discrete_igbts_pt_ixg_55n120a3h1_datasheet.pdf
IXGX55N120A3H1
Виробник: IXYS
Description: IGBT 1200V 125A 460W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 55A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/365ns
Switching Energy: 5.1mJ (on), 13.3mJ (off)
Test Condition: 960V, 55A, 3Ohm, 15V
Gate Charge: 185 nC
Current - Collector (Ic) (Max): 125 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 460 W
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IXGX64N60B3D1
IXGX64N60B3D1
Виробник: IXYS
Description: IGBT 600V 460W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/138ns
Switching Energy: 1.5mJ (on), 1mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 168 nC
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 460 W
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IXGX82N120A3
IXGX82N120A3
Виробник: IXYS
Description: IGBT 1200V 260A 1250W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 82A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 34ns/265ns
Switching Energy: 5.5mJ (on), 12.5mJ (off)
Test Condition: 600V, 80A, 2Ohm, 15V
Gate Charge: 340 nC
Part Status: Active
Current - Collector (Ic) (Max): 260 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 580 A
Power - Max: 1250 W
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IXGX82N120B3
IXGX82N120B3
Виробник: IXYS
Description: IGBT 1200V 230A 1250W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/210ns
Switching Energy: 5mJ (on), 3.3mJ (off)
Test Condition: 600V, 80A, 2Ohm, 15V
Gate Charge: 350 nC
Part Status: Active
Current - Collector (Ic) (Max): 230 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 500 A
Power - Max: 1250 W
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IXTA15P15T DS100292A(IXTA-TP-TY15P15T).pdf
IXTA15P15T
Виробник: IXYS
Description: MOSFET P-CH 150V 15A TO-263
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IXTA26P10T DS100291A(IXTA-TP-TY26P10T).pdf
IXTA26P10T
Виробник: IXYS
Description: MOSFET P-CH 100V 26A TO-263
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IXTA460P2 littelfuse_discrete_mosfets_n-channel_standard_ixt_460p2_datasheet.pdf.pdf
IXTA460P2
Виробник: IXYS
Description: MOSFET N-CH 500V 24A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 25 V
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IXTA48P05T littelfuse-discrete-mosfets-ixt-48p05t-datasheet?assetguid=62c140ac-c7df-4f51-9814-249b142e0b84
IXTA48P05T
Виробник: IXYS
Description: MOSFET P-CH 50V 48A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 24A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V
на замовлення 3795 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+299.05 грн
50+156.79 грн
100+153.73 грн
500+130.47 грн
1000+123.92 грн
Мінімальне замовлення: 2
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IXTH140P10T littelfuse_discrete_mosfets_p-channel_ixt_140p10t_datasheet.pdf.pdf
IXTH140P10T
Виробник: IXYS
Description: MOSFET P-CH 100V 140A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 70A, 10V
Power Dissipation (Max): 568W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 31400 pF @ 25 V
на замовлення 37 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1482.77 грн
10+1312.36 грн
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IXTH300N04T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixth300n04t2_datasheet.pdf.pdf
IXTH300N04T2
Виробник: IXYS
Description: MOSFET N-CH 40V 300A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
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IXTH420N04T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixth420n04t2_datasheet.pdf.pdf
IXTH420N04T2
Виробник: IXYS
Description: MOSFET N-CH 40V 420A TO247
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IXTH460P2 littelfuse_discrete_mosfets_n-channel_standard_ixt_460p2_datasheet.pdf.pdf
IXTH460P2
Виробник: IXYS
Description: MOSFET N-CH 500V 24A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 25 V
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IXTH50N25T littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_50n25t_datasheet.pdf.pdf
IXTH50N25T
Виробник: IXYS
Description: MOSFET N-CH 250V 50A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
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IXTJ6N150 DS100448A(IXTJ6N150).pdf
Виробник: IXYS
Description: MOSFET N-CH 1500V 3A ISOTO-247
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IXTK20N150 238_DS100424BIXTKTX20N150.pdf
IXTK20N150
Виробник: IXYS
Description: MOSFET N-CH 1500V 20A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 10A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-264 (IXTK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 25 V
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IXTN120P20T littelfuse_discrete_mosfets_p-channel_ixtn120p20t_datasheet.pdf.pdf
IXTN120P20T
Виробник: IXYS
Description: MOSFET P-CH 200V 106A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 60A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 73000 pF @ 25 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3769.78 грн
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IXTP02N120P littelfuse-discrete-mosfets-ixt-02n120p-datasheet?assetguid=28c53e8f-de75-400b-95e2-28ff1adfa0e0
IXTP02N120P
Виробник: IXYS
Description: MOSFET N-CH 1200V 200MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 75Ohm @ 100mA, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 25 V
на замовлення 2939 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+232.68 грн
50+112.56 грн
100+101.77 грн
500+77.77 грн
1000+72.07 грн
2000+67.59 грн
Мінімальне замовлення: 2
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IXTP05N100P littelfuse-discrete-mosfets-ixt-05n100p-datasheet?assetguid=96c672c8-2a09-4a39-a0da-772c2b944807
IXTP05N100P
Виробник: IXYS
Description: MOSFET N-CH 1000V 500MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)
Rds On (Max) @ Id, Vgs: 30Ohm @ 250mA, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 25 V
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IXTP10P15T DS100290(IXTA-TP-TY10P15T).pdf
IXTP10P15T
Виробник: IXYS
Description: MOSFET P-CH 150V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
на замовлення 1556 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+259.23 грн
50+197.34 грн
100+169.15 грн
500+141.11 грн
1000+120.82 грн
Мінімальне замовлення: 2
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IXTP1N80P DS100112(IXTA-TP-TU-TY1N80P).pdf
IXTP1N80P
Виробник: IXYS
Description: MOSFET N-CH 800V 1A TO-220
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IXTP460P2 littelfuse_discrete_mosfets_n-channel_standard_ixt_460p2_datasheet.pdf.pdf
IXTP460P2
Виробник: IXYS
Description: MOSFET N-CH 500V 24A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 25 V
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IXTP48P05T littelfuse-discrete-mosfets-ixt-48p05t-datasheet?assetguid=62c140ac-c7df-4f51-9814-249b142e0b84
IXTP48P05T
Виробник: IXYS
Description: MOSFET P-CH 50V 48A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 24A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V
на замовлення 1275 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+329.50 грн
50+173.88 грн
100+158.44 грн
500+127.08 грн
1000+116.03 грн
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IXTP60N20T littelfuse-discrete-mosfets-ixt-60n20t-datasheet?assetguid=a2bc6b7d-dab8-4007-9c70-5b1fc95634b1
IXTP60N20T
Виробник: IXYS
Description: MOSFET N-CH 200V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4530 pF @ 25 V
на замовлення 198 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+460.68 грн
50+237.61 грн
100+217.74 грн
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IXTR120P20T littelfuse_discrete_mosfets_p-channel_ixtr120p20t_datasheet.pdf.pdf
IXTR120P20T
Виробник: IXYS
Description: MOSFET P-CH 200V 90A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 60A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 73000 pF @ 25 V
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IXTR140P10T littelfuse_discrete_mosfets_p-channel_ixtr140p10t_datasheet.pdf.pdf
IXTR140P10T
Виробник: IXYS
Description: MOSFET P-CH 100V 110A ISOPLUS247
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IXTR210P10T littelfuse_discrete_mosfets_p-channel_ixtr210p10t_datasheet.pdf.pdf
IXTR210P10T
Виробник: IXYS
Description: MOSFET P-CH 100V 195A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 105A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 69500 pF @ 25 V
на замовлення 540 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
300+1741.08 грн
Мінімальне замовлення: 300
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IXTT110N10L2 PdfFile135152.pdf
IXTT110N10L2
Виробник: IXYS
Description: MOSFET N-CH 100V 110A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 55A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
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IXTT440N055T2 littelfuse-discrete-mosfets-ixt-440n055t2-datasheet?assetguid=6586e5ca-cda3-411d-bbe5-f50ff4a13d25
IXTT440N055T2
Виробник: IXYS
Description: MOSFET N-CH 55V 440A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 440A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 1000W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 405 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25000 pF @ 25 V
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IXTT500N04T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_500n04t2_datasheet.pdf.pdf
IXTT500N04T2
Виробник: IXYS
Description: MOSFET N-CH 40V 500A TO268
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IXTY10P15T DS100290(IXTA-TP-TY10P15T).pdf
IXTY10P15T
Виробник: IXYS
Description: MOSFET P-CH 150V 10A TO-252
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IXTY26P10T littelfuse_discrete_mosfets_p-channel_ixt_26p10t_datasheet.pdf.pdf
IXTY26P10T
Виробник: IXYS
Description: MOSFET P-CH 100V 26A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 13A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3820 pF @ 25 V
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IXTY32P05T DS99967C(IXTY-TA-TP32P05T).pdf
IXTY32P05T
Виробник: IXYS
Description: MOSFET P-CH 50V 32A TO-252
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IXXH30N60B3D1 DS100334BIXXH30N60B3D1.pdf
IXXH30N60B3D1
Виробник: IXYS
Description: IGBT PT 600V 60A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 24A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/97ns
Switching Energy: 550µJ (on), 500µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 39 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 115 A
Power - Max: 270 W
на замовлення 547 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+488.79 грн
30+270.93 грн
120+227.10 грн
510+183.33 грн
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IXXH50N60B3 littelfuse-discrete-igbts-ixx-50n60b3-datasheet?assetguid=0584ed69-861c-477c-9ed3-244c01c8d170
IXXH50N60B3
Виробник: IXYS
Description: IGBT PT 600V 120A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 27ns/100ns
Switching Energy: 670µJ (on), 740µJ (off)
Test Condition: 360V, 36A, 5Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+837.03 грн
30+486.80 грн
120+416.80 грн
510+374.67 грн
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IXXH50N60B3D1 DS100302BIXXH50N60B3D1.pdf
IXXH50N60B3D1
Виробник: IXYS
Description: IGBT PT 600V 120A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 27ns/100ns
Switching Energy: 670µJ (on), 740µJ (off)
Test Condition: 360V, 36A, 5Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
на замовлення 582 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+924.49 грн
30+542.19 грн
120+465.95 грн
510+426.17 грн
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IXXH75N60B3D1 DS100328BIXXH75N60B3D1.pdf
IXXH75N60B3D1
Виробник: IXYS
Description: IGBT PT 600V 160A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 60A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 35ns/118ns
Switching Energy: 1.7mJ (on), 1.5mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 107 nC
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 750 W
на замовлення 198 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+634.80 грн
30+359.81 грн
120+304.69 грн
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IXXH75N60C3 littelfuse-discrete-igbts-ixxh75n60c3-datasheet?assetguid=18b30bab-ce67-4b38-a8fd-bd1143f61ab4
IXXH75N60C3
Виробник: IXYS
Description: IGBT PT 600V 150A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 35ns/90ns
Switching Energy: 1.6mJ (on), 800µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 107 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 750 W
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IXXK200N60B3 DS100372AIXXKX200N60B3.pdf
IXXK200N60B3
Виробник: IXYS
Description: IGBT PT 600V 380A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 48ns/160ns
Switching Energy: 2.85mJ (on), 2.9mJ (off)
Test Condition: 360V, 100A, 1Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 380 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 900 A
Power - Max: 1630 W
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IXXK200N60C3
IXXK200N60C3
Виробник: IXYS
Description: IGBT PT 600V 340A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 47ns/125ns
Switching Energy: 3mJ (on), 1.7mJ (off)
Test Condition: 360V, 100A, 1Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 340 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 900 A
Power - Max: 1630 W
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IXXR100N60B3H1 media?resourcetype=datasheets&itemid=613f1ae9-0731-4a6d-b1c2-52f5f0c7f673&filename=littelfuse_discrete_igbts_xpt_ixxr100n60b3h1_datasheet.pdf
IXXR100N60B3H1
Виробник: IXYS
Description: IGBT 600V 145A 400W ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/120ns
Switching Energy: 1.9mJ (on), 2mJ (off)
Test Condition: 360V, 70A, 2Ohm, 15V
Gate Charge: 143 nC
Current - Collector (Ic) (Max): 145 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 440 A
Power - Max: 400 W
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
300+1187.73 грн
Мінімальне замовлення: 300
В кошику  од. на суму  грн.
IXXX100N60C3H1 media?resourcetype=datasheets&itemid=9922f041-1111-4aea-bb33-e69a6770637d&filename=littelfuse_discrete_igbts_xpt_ixx_100n60c3h1_datasheet.pdf
IXXX100N60C3H1
Виробник: IXYS
Description: IGBT 600V 170A 695W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 70A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/90ns
Switching Energy: 2mJ (on), 950µJ (off)
Test Condition: 360V, 70A, 2Ohm, 15V
Gate Charge: 150 nC
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 340 A
Power - Max: 695 W
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IXYH24N90C3 littelfuse-discrete-igbts-ixbf9n160g-datasheet?assetguid=6360b46e-5017-4b38-bbef-9a125968ea41
IXYH24N90C3
Виробник: IXYS
Description: IGBT 900V 46A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/73ns
Switching Energy: 1.35mJ (on), 400µJ (off)
Test Condition: 450V, 24A, 10Ohm, 15V
Gate Charge: 40 nC
Part Status: Active
Current - Collector (Ic) (Max): 46 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 240 W
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IXYH30N120C3 littelfuse-discrete-igbts-ixy-30n120c3-datasheet?assetguid=2ea8c579-5c73-49da-91dd-e10580f9526d
IXYH30N120C3
Виробник: IXYS
Description: IGBT 1200V 75A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 30A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 19ns/130ns
Switching Energy: 2.6mJ (on), 1.1mJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 69 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 145 A
Power - Max: 500 W
на замовлення 1230 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+563.75 грн
30+316.40 грн
120+266.64 грн
510+221.48 грн
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IXYH30N120C3D1 media-3320177.pdf
IXYH30N120C3D1
Виробник: IXYS
Description: IGBT 1200V 66A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 30A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 19ns/130ns
Switching Energy: 2.6mJ (on), 1.1mJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 69 nC
Part Status: Active
Current - Collector (Ic) (Max): 66 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 133 A
Power - Max: 416 W
на замовлення 1363 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+749.58 грн
30+430.99 грн
120+367.17 грн
510+322.19 грн
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IXYH40N120C3 DS100416BIXYH40N120C3.pdf
IXYH40N120C3
Виробник: IXYS
Description: IGBT 1200V 70A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 24ns/125ns
Switching Energy: 3.9mJ (on), 660µJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 85 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 115 A
Power - Max: 577 W
на замовлення 606 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+720.69 грн
30+413.69 грн
120+352.20 грн
510+308.11 грн
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IXYH40N120C3D1 littelfuse-discrete-igbts-ixyh40n120c3d1-datasheet?assetguid=0a9184c9-b984-421b-b5a1-4ac88a5bd1cd
IXYH40N120C3D1
Виробник: IXYS
Description: IGBT 1200V 64A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 24ns/125ns
Switching Energy: 3.9mJ (on), 660µJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 85 nC
Part Status: Active
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 480 W
на замовлення 1770 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+855.77 грн
30+498.43 грн
120+427.10 грн
510+385.41 грн
В кошику  од. на суму  грн.
IXYK100N120C3 DS100404AIXYKX100N120C3.pdf
IXYK100N120C3
Виробник: IXYS
Description: IGBT 1200V 188A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
Supplier Device Package: TO-264 (IXYK)
Td (on/off) @ 25°C: 32ns/123ns
Switching Energy: 6.5mJ (on), 2.9mJ (off)
Test Condition: 600V, 100A, 1Ohm, 15V
Gate Charge: 270 nC
Part Status: Active
Current - Collector (Ic) (Max): 188 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 490 A
Power - Max: 1150 W
на замовлення 256 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2016.07 грн
25+1287.82 грн
100+1221.73 грн
В кошику  од. на суму  грн.
IXYN100N120C3 littelfuse_discrete_igbts_xpt_ixyn100n120c3_datasheet.pdf.pdf
IXYN100N120C3
Виробник: IXYS
Description: IGBT MOD 1200V 152A 830W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Active
Current - Collector (Ic) (Max): 152 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 830 W
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 6 nF @ 25 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3575.36 грн
В кошику  од. на суму  грн.
IXYN100N120C3H1 littelfusediscreteigbtsxptixyn100n120c3h1data.pdf
IXYN100N120C3H1
Виробник: IXYS
Description: IGBT MODULE 1200V 134A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Active
Current - Collector (Ic) (Max): 134 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 690 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 6 nF @ 25 V
на замовлення 1082 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2634.47 грн
10+1890.34 грн
100+1707.61 грн
В кошику  од. на суму  грн.
IXYN82N120C3
IXYN82N120C3
Виробник: IXYS
Description: IGBT MOD 1200V 105A 500W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Active
Current - Collector (Ic) (Max): 105 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 4.1 nF @ 25 V
на замовлення 290 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2183.94 грн
10+1547.93 грн
100+1344.22 грн
В кошику  од. на суму  грн.
IXYP30N120C3 littelfuse-discrete-igbts-ixy-30n120c3-datasheet?assetguid=2ea8c579-5c73-49da-91dd-e10580f9526d
IXYP30N120C3
Виробник: IXYS
Description: IGBT 1200V 75A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 30A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 19ns/130ns
Switching Energy: 2.6mJ (on), 1.1mJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 69 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 145 A
Power - Max: 500 W
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IXYP8N90C3 media?resourcetype=datasheets&itemid=11D4BD5C-8AE2-405E-8BEC-58F631EF5FBE&filename=Littelfuse-Discrete-IGBTs-XPT-IXY-8N90C3-Datasheet.PDF
IXYP8N90C3
Виробник: IXYS
Description: IGBT 900V 20A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 16ns/40ns
Switching Energy: 460µJ (on), 180µJ (off)
Test Condition: 450V, 8A, 30Ohm, 15V
Gate Charge: 13.3 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 125 W
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IXYP8N90C3D1 littelfuse-discrete-igbts-ixgh42n30c3-datasheet?assetguid=cfdebaeb-c0d6-454a-8b5e-9c212af484cf
IXYP8N90C3D1
Виробник: IXYS
Description: IGBT 900V 20A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 114 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 16ns/40ns
Switching Energy: 460µJ (on), 180µJ (off)
Test Condition: 450V, 8A, 30Ohm, 15V
Gate Charge: 13.3 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 125 W
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IXYR100N120C3 littelfuse_discrete_igbts_xpt_ixyr100n120c3_datasheet.pdf.pdf
IXYR100N120C3
Виробник: IXYS
Description: IGBT 1200V 104A 484W ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
Supplier Device Package: ISOPLUS247™
Td (on/off) @ 25°C: 32ns/123ns
Switching Energy: 6.5mJ (on), 2.9mJ (off)
Test Condition: 600V, 100A, 1Ohm, 15V
Gate Charge: 270 nC
Part Status: Active
Current - Collector (Ic) (Max): 104 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 484 W
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2224.55 грн
В кошику  од. на суму  грн.
IXYX100N120C3 DS100404AIXYKX100N120C3.pdf
IXYX100N120C3
Виробник: IXYS
Description: IGBT 1200V 188A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 32ns/123ns
Switching Energy: 6.5mJ (on), 2.9mJ (off)
Test Condition: 600V, 100A, 1Ohm, 15V
Gate Charge: 270 nC
Part Status: Active
Current - Collector (Ic) (Max): 188 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 490 A
Power - Max: 1150 W
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2029.34 грн
30+1272.86 грн
120+1231.39 грн
В кошику  од. на суму  грн.
MMIX1T550N055T2 littelfuse_discrete_mosfets_smpd_packages_mmix1t550n055t2_datasheet.pdf.pdf
Виробник: IXYS
Description: MOSFET N-CH 55V 550A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 550A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 24-SMPD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 595 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3504.30 грн
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DSEI8-06AS-TRL Littelfuse-Power-Semiconductors-DSEI8-06A-Datasheet?assetguid=e637c6ed-d932-4130-b9e4-8226a2821674
DSEI8-06AS-TRL
Виробник: IXYS
Description: DIODE STANDARD 600V 8A TO263AA
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
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DSEP40-03AS-TRL media?resourcetype=datasheets&itemid=d5c9c212-3e77-4435-b031-6ff61a740ca1&filename=Littelfuse-Power-Semiconductors-DSEP40-03AS-Datasheet
DSEP40-03AS-TRL
Виробник: IXYS
Description: DIODE STANDARD 300V 40A TO263AA
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 150V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.44 V @ 40 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
на замовлення 3628 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+309.20 грн
10+217.37 грн
100+175.36 грн
Мінімальне замовлення: 2
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