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IXFR58N20 IXFR58N20 IXYS 98591.pdf Description: MOSFET N-CH 200V 50A ISOPLUS247
товару немає в наявності
 Мінімальне замовлення: 60 шт
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IXFR80N60P3 IXFR80N60P3 IXYS media?resourcetype=datasheets&itemid=009C6FF2-024A-4E5F-BFDB-8F99ACAA6258&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFR80N60P3-Datasheet.PDF Description: MOSFET N-CH 600V 48A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 76mOhm @ 40A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
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IXFT150N20T IXFT150N20T IXYS media?resourcetype=datasheets&itemid=2BBF3AE5-6A29-4FA7-BB1A-5FFF3B64FA7D&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXF-150N20T-Datasheet.PDF Description: MOSFET N-CH 200V 150A TO268
Input Capacitance (Ciss) (Max) @ Vds: 11700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 890W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
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IXFT320N10T2 IXFT320N10T2 IXYS littelfuse-discrete-mosfets-ixf-320n10t2-datasheet?assetguid=99cd63b2-fc21-4394-81cf-ea2bb2be118d Description: MOSFET N-CH 100V 320A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 1000W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 26000 pF @ 25 V
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IXFT94N30T IXFT94N30T IXYS DS100383A(IXFH-T94N30T).pdf Description: MOSFET N-CH 300V 94A TO268
на замовлення 3690 шт:
термін постачання 21-31 дні (днів)
 Мінімальне замовлення: 30 шт
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IXFX250N10P IXFX250N10P IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_250n10p_datasheet.pdf.pdf Description: MOSFET N-CH 100V 250A PLUS247-3
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PLUS247™-3
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 1250W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
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IXFY4N60P3 IXFY4N60P3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_4n60p3_datasheet.pdf.pdf Description: MOSFET N-CH 600V 4A TO252
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IXFZ520N075T2 IXFZ520N075T2 IXYS media?resourcetype=datasheets&itemid=867EADBD-B9E8-4949-8497-F2EAC382E420&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXFZ520N075T2-Datasheet.PDF Description: MOSFET N-CH 75V 465A DE475
Packaging: Tube
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 465A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: DE475
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 41000 pF @ 25 V
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IXGA12N120A3 IXGA12N120A3 IXYS littelfuse_discrete_igbts_pt_ixg_12n120a3_datasheet.pdf.pdf Description: IGBT 1200V 22A 100W TO263
IGBT Type: PT
Supplier Device Package: TO-263AA
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Power - Max: 100 W
Current - Collector Pulsed (Icm): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 22 A
Gate Charge: 20.4 nC
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IXGA20N120B3 IXGA20N120B3 IXYS littelfuse-discrete-igbts-ixg-20n120b3-datasheet?assetguid=def4a3cc-20a8-4c45-8af2-ba8dcd0c72ff Description: IGBT PT 1200V 36A TO-263AA
Power - Max: 180 W
Current - Collector Pulsed (Icm): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 36 A
Part Status: Active
Gate Charge: 51 nC
Test Condition: 600V, 16A, 15Ohm, 15V
Switching Energy: 920µJ (on), 560µJ (off)
Td (on/off) @ 25°C: 16ns/150ns
IGBT Type: PT
Supplier Device Package: TO-263AA
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 16A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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IXGA50N60C4 IXGA50N60C4 IXYS DS100298C(IXGA-P-H50N60C4).pdf Description: IGBT 600V 90A 300W TO263
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 Мінімальне замовлення: 150 шт
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IXGH12N120A3 IXGH12N120A3 IXYS littelfuse_discrete_igbts_pt_ixg_12n120a3_datasheet.pdf.pdf Description: IGBT 1200V 22A 100W TO247
Power - Max: 100 W
Current - Collector Pulsed (Icm): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 22 A
Gate Charge: 20.4 nC
IGBT Type: PT
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 1620 шт:
термін постачання 21-31 дні (днів)
300+189.58 грн
Мінімальне замовлення: 300 шт
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IXGH20N140C3H1 IXGH20N140C3H1 IXYS littelfuse_discrete_igbts_pt_ixg_20n140c3h1_datasheet.pdf.pdf Description: IGBT 1400V 42A 250W TO247
Power - Max: 250 W
Current - Collector Pulsed (Icm): 108 A
Voltage - Collector Emitter Breakdown (Max): 1400 V
Current - Collector (Ic) (Max): 42 A
Gate Charge: 88 nC
Test Condition: 700V, 20A, 5Ohm, 15V
Switching Energy: 1.35mJ (on), 440µJ (off)
Td (on/off) @ 25°C: 19ns/110ns
IGBT Type: PT
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 20A
Reverse Recovery Time (trr): 70 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXGH24N60C4 IXYS Description: IGBT PT 600V 56A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/143ns
Switching Energy: 400µJ (on), 300µJ (off)
Test Condition: 360V, 24A, 10Ohm, 15V
Gate Charge: 64 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 56 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 130 A
Power - Max: 190 W
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IXGH24N60C4D1 IXYS Description: IGBT PT 600V 56A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/143ns
Switching Energy: 400µJ (on), 300µJ (off)
Test Condition: 360V, 24A, 10Ohm, 15V
Gate Charge: 64 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 56 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 130 A
Power - Max: 190 W
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IXGH28N140B3H1 IXGH28N140B3H1 IXYS littelfuse_discrete_igbts_pt_ixg_28n140b3h1_datasheet.pdf.pdf Description: IGBT 1400V 60A 300W TO247
Power - Max: 300 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 1400 V
Current - Collector (Ic) (Max): 60 A
Gate Charge: 88 nC
Test Condition: 960V, 28A, 5Ohm, 15V
Switching Energy: 3.6mJ (on), 3.9mJ (off)
Td (on/off) @ 25°C: 16ns/190ns
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 28A
Reverse Recovery Time (trr): 350 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXGH30N60B4 IXGH30N60B4 IXYS Description: IGBT PT 600V 66A TO-247AD
Power - Max: 190 W
Current - Collector Pulsed (Icm): 156 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 66 A
Gate Charge: 77 nC
Test Condition: 400V, 24A, 10Ohm, 15V
Switching Energy: 440µJ (on), 700µJ (off)
Td (on/off) @ 25°C: 21ns/200ns
IGBT Type: PT
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 24A
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
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IXGH36N60A3 IXGH36N60A3 IXYS littelfuse-discrete-igbts-ixg-36n60a3-datasheet?assetguid=c23e0bfa-71be-4fc5-95ce-1a86be9b836e Description: IGBT PT 600V TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/330ns
Switching Energy: 740µJ (on), 3mJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 80 nC
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 220 W
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 Мінімальне замовлення: 30 шт
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IXGH36N60B3 IXGH36N60B3 IXYS littelfuse-discrete-igbts-ixgh36n60b3-datasheet?assetguid=b1803890-5b28-411c-a8c3-a6d8847339c8 Description: IGBT PT 600V 92A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/125ns
Switching Energy: 540µJ (on), 800µJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 92 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 250 W
на замовлення 392 шт:
термін постачання 21-31 дні (днів)
1+480.44 грн
30+264.51 грн
120+220.96 грн
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IXGH50N60C4 IXGH50N60C4 IXYS DS100298C(IXGA-P-H50N60C4).pdf Description: IGBT 600V 90A 300W TO247
Power - Max: 300 W
Current - Collector Pulsed (Icm): 220 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 90 A
Part Status: Obsolete
Gate Charge: 113 nC
Test Condition: 400V, 36A, 10Ohm, 15V
Switching Energy: 950µJ (on), 840µJ (off)
Td (on/off) @ 25°C: 40ns/270ns
IGBT Type: PT
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 36A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXGH56N60A3 IXGH56N60A3 IXYS littelfuse-discrete-igbts-ixgh56n60a3-datasheet?assetguid=36f75a5a-a641-4d71-802a-ec49621c881d Description: IGBT PT 600V 150A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 44A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 26ns/310ns
Switching Energy: 1mJ (on), 3.75mJ (off)
Test Condition: 480V, 44A, 5Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 370 A
Power - Max: 330 W
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IXGH56N60B3D1 IXGH56N60B3D1 IXYS littelfuse_discrete_igbts_pt_ixgh56n60b3d1_datasheet.pdf.pdf Description: IGBT PT 600V TO-247AD
Power - Max: 330 W
Current - Collector Pulsed (Icm): 350 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Gate Charge: 138 nC
Test Condition: 480V, 44A, 5Ohm, 15V
Switching Energy: 1.3mJ (on), 1.05mJ (off)
Td (on/off) @ 25°C: 26ns/155ns
IGBT Type: PT
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 44A
Reverse Recovery Time (trr): 100 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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 Мінімальне замовлення: 30 шт
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IXGH64N60A3 IXGH64N60A3 IXYS littelfuse_discrete_igbts_pt_ixg_64n60a3_datasheet.pdf.pdf Description: IGBT 600V 460W TO247
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IXGH64N60B3 IXGH64N60B3 IXYS littelfuse-discrete-igbts-ixg-64n60b3-datasheet?assetguid=2327aeab-d06f-45ab-8c72-805732caec63 Description: IGBT PT 600V TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/138ns
Switching Energy: 1.5mJ (on), 1mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 168 nC
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 460 W
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IXGK320N60B3 IXGK320N60B3 IXYS littelfuse-discrete-igbts-ixg-320n60b3-datasheet?assetguid=448e088e-56ea-48d2-b291-c14c7820b437 Description: IGBT PT 600V 500A TO-264
Power - Max: 1700 W
Current - Collector Pulsed (Icm): 1200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 500 A
Part Status: Active
Switching Energy: 2.7mJ (on), 3.5mJ (off)
Td (on/off) @ 25°C: 44ns/250ns
IGBT Type: PT
Supplier Device Package: TO-264 (IXGK)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Gate Charge: 585 nC
Test Condition: 480V, 100A, 1Ohm, 15V
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IXGK55N120A3H1 IXGK55N120A3H1 IXYS Description: IGBT PT 1200V 125A TO-264
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Power - Max: 460 W
Current - Collector Pulsed (Icm): 400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 125 A
Gate Charge: 185 nC
Test Condition: 960V, 55A, 3Ohm, 15V
Switching Energy: 5.1mJ (on), 13.3mJ (off)
Td (on/off) @ 25°C: 23ns/365ns
IGBT Type: PT
Supplier Device Package: TO-264 (IXGK)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 55A
Reverse Recovery Time (trr): 200 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
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 Мінімальне замовлення: 300 шт
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IXGK82N120A3 IXGK82N120A3 IXYS littelfuse_discrete_igbts_pt_ixg_82n120a3_datasheet.pdf.pdf Description: IGBT 1200V 260A 1250W TO264
Power - Max: 1250 W
Current - Collector Pulsed (Icm): 580 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 260 A
Gate Charge: 340 nC
Test Condition: 600V, 80A, 2Ohm, 15V
Switching Energy: 5.5mJ (on), 12.5mJ (off)
Td (on/off) @ 25°C: 34ns/265ns
IGBT Type: PT
Supplier Device Package: TO-264 (IXGK)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 82A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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 Мінімальне замовлення: 300 шт
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IXGK82N120B3 IXGK82N120B3 IXYS littelfuse_discrete_igbts_pt_ixg_82n120b3_datasheet.pdf.pdf Description: IGBT 1200V 230A 1250W TO264
Packaging: Tube
Current - Collector (Ic) (Max): 230 A
Gate Charge: 350 nC
Test Condition: 600V, 80A, 2Ohm, 15V
Switching Energy: 5mJ (on), 3.3mJ (off)
Td (on/off) @ 25°C: 30ns/210ns
IGBT Type: PT
Supplier Device Package: TO-264 (IXGK)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Power - Max: 1250 W
Current - Collector Pulsed (Icm): 500 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
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IXGN400N60B3 IXGN400N60B3 IXYS littelfuse-discrete-igbts-ixgn400n60b3-datasheet?assetguid=6c880e02-cb87-465f-a3ab-914a55cd1323 Description: IGBT MODULE 600V 430A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 430 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1000 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 31 nF @ 25 V
на замовлення 134 шт:
термін постачання 21-31 дні (днів)
1+5134.54 грн
10+3821.63 грн
100+3616.11 грн
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IXGN50N120C3H1 IXGN50N120C3H1 IXYS media?resourcetype=datasheets&itemid=22C23490-17BF-4D83-B043-E4F6CEAFB2F9&filename=Littelfuse-Discrete-IGBTs-PT-IXGN50N120C3H1-Datasheet.PDF Description: IGBT MOD 1200V 95A 460W SOT-227B
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 460 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 95 A
Part Status: Active
IGBT Type: PT
Supplier Device Package: SOT-227B
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 40A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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IXGN82N120B3H1 IXGN82N120B3H1 IXYS littelfuse_discrete_igbts_pt_ixgn82n120b3h1_datasheet.pdf.pdf Description: IGBT MOD 1200V 145A 595W SOT227B
Input Capacitance (Cies) @ Vce: 7.9 nF @ 25 V
Current - Collector Cutoff (Max): 50 µA
Power - Max: 595 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 145 A
Part Status: Discontinued at Digi-Key
IGBT Type: PT
Supplier Device Package: SOT-227B
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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IXGP12N120A3 IXGP12N120A3 IXYS littelfuse_discrete_igbts_pt_ixg_12n120a3_datasheet.pdf.pdf Description: IGBT 1200V 22A 100W TO220
Power - Max: 100 W
Current - Collector Pulsed (Icm): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 22 A
Part Status: Active
Gate Charge: 20.4 nC
IGBT Type: PT
Supplier Device Package: TO-220-3
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-220-3
на замовлення 1168 шт:
термін постачання 21-31 дні (днів)
1+309.96 грн
30+177.67 грн
120+149.72 грн
510+122.25 грн
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IXGP24N60C4 IXGP24N60C4 IXYS DS100253B(IXGA-H-P24N60C4).pdf Description: IGBT 600V 56A 190W TO220
Power - Max: 190 W
Current - Collector Pulsed (Icm): 130 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 56 A
Part Status: Obsolete
Gate Charge: 64 nC
Test Condition: 360V, 24A, 10Ohm, 15V
Switching Energy: 400µJ (on), 300µJ (off)
Td (on/off) @ 25°C: 21ns/143ns
IGBT Type: PT
Supplier Device Package: TO-220-3
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IXGP24N60C4D1 IXGP24N60C4D1 IXYS DS100257A(IXGP24N60C4D1).pdf Description: IGBT 600V 56A 190W TO220
Power - Max: 190 W
Current - Collector Pulsed (Icm): 130 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 56 A
Part Status: Obsolete
Gate Charge: 64 nC
Test Condition: 360V, 24A, 10Ohm, 15V
Switching Energy: 350µJ (on), 340µJ (off)
Td (on/off) @ 25°C: 22ns/192ns
IGBT Type: PT
Supplier Device Package: TO-220-3
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Reverse Recovery Time (trr): 30 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IXGP30N60B4D1 IXGP30N60B4D1 IXYS Description: IGBT 600V 56A 190W TO220
Packaging: Tube
Power - Max: 190 W
Current - Collector Pulsed (Icm): 156 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 56 A
Gate Charge: 77 nC
Test Condition: 400V, 24A, 10Ohm, 15V
Switching Energy: 440µJ (on), 700µJ (off)
Td (on/off) @ 25°C: 21ns/200ns
IGBT Type: PT
Supplier Device Package: TO-220-3
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 24A
Reverse Recovery Time (trr): 30 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
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IXGP50N60C4 IXGP50N60C4 IXYS DS100298C(IXGA-P-H50N60C4).pdf Description: IGBT 600V 90A 300W TO220
товару немає в наявності
 Мінімальне замовлення: 200 шт
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IXGQ50N60B4D1 IXGQ50N60B4D1 IXYS DS100318C(IXGQ-H50N60B4D1).pdf Description: IGBT 600V 100A 300W TO3P
Power - Max: 300 W
Current - Collector Pulsed (Icm): 230 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
Gate Charge: 110 nC
Test Condition: 400V, 36A, 10Ohm, 15V
Switching Energy: 930µJ (on), 1mJ (off)
Td (on/off) @ 25°C: 37ns/330ns
IGBT Type: PT
Supplier Device Package: TO-3P
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A
Reverse Recovery Time (trr): 25 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
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IXGQ50N60C4D1 IXGQ50N60C4D1 IXYS DS100297D(IXGH-Q50N60C4D1).pdf Description: IGBT 600V 90A 300W TO3P
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 36A
Reverse Recovery Time (trr): 25 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Power - Max: 300 W
Current - Collector Pulsed (Icm): 220 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 90 A
Gate Charge: 113 nC
Test Condition: 400V, 36A, 10Ohm, 15V
Switching Energy: 950µJ (on), 840µJ (off)
Td (on/off) @ 25°C: 40ns/270ns
IGBT Type: PT
Supplier Device Package: TO-3P
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IXGR55N120A3H1 IXGR55N120A3H1 IXYS Description: IGBT PT 1200V 70A ISOPLUS247
Gate Charge: 185 nC
Test Condition: 960V, 55A, 3Ohm, 15V
Switching Energy: 5.1mJ (on), 13.3mJ (off)
Td (on/off) @ 25°C: 23ns/365ns
IGBT Type: PT
Supplier Device Package: ISOPLUS247™
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 55A
Reverse Recovery Time (trr): 200 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 200 W
Current - Collector Pulsed (Icm): 330 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 70 A
Part Status: Active
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXGR6N170A IXGR6N170A IXYS littelfuse-discrete-igbts-ixgr6n170a-datasheet?assetguid=e8bac480-2930-4ec3-906b-91f408d5b342 Description: IGBT 1700V 5.5A ISOPLUS247
Power - Max: 50 W
Current - Collector Pulsed (Icm): 18 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 5.5 A
Part Status: Active
Gate Charge: 18.5 nC
Test Condition: 850V, 6A, 33Ohm, 15V
Switching Energy: 590µJ (on), 180µJ (off)
Td (on/off) @ 25°C: 46ns/220ns
Supplier Device Package: ISOPLUS247™
Vce(on) (Max) @ Vge, Ic: 7V @ 15V, 3A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXGT20N140C3H1 IXGT20N140C3H1 IXYS DS100251(IXGH-GT20N140C3H1).pdf Description: IGBT 1400V 42A 250W TO268
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 Мінімальне замовлення: 30 шт
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IXGT72N60B3 IXGT72N60B3 IXYS Description: IGBT 600V 75A 540W TO268
Td (on/off) @ 25°C: 31ns/150ns
IGBT Type: PT
Supplier Device Package: TO-268AA
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 60A
Input Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Packaging: Tube
Power - Max: 540 W
Current - Collector Pulsed (Icm): 400 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 75 A
Part Status: Obsolete
Gate Charge: 230 nC
Test Condition: 480V, 50A, 3Ohm, 15V
Switching Energy: 1.38mJ (on), 1.05mJ (off)
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IXGX120N120B3 IXGX120N120B3 IXYS media?resourcetype=datasheets&itemid=5366A0CF-0BA0-4D32-972E-C98515FBEF79&filename=Littelfuse-Discrete-IGBTs-PT-IXG-120N120B3-Datasheet.PDF Description: IGBT PT 1200V 200A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 36ns/275ns
Switching Energy: 5.5mJ (on), 5.8mJ (off)
Test Condition: 600V, 100A, 2Ohm, 15V
Gate Charge: 470 nC
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 370 A
Power - Max: 830 W
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IXGX28N140B3H1 IXGX28N140B3H1 IXYS Description: IGBT 1400V 60A 300W PLUS247
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 Мінімальне замовлення: 30 шт
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IXGX320N60B3 IXGX320N60B3 IXYS littelfuse-discrete-igbts-ixg-320n60b3-datasheet?assetguid=448e088e-56ea-48d2-b291-c14c7820b437 Description: IGBT PT 600V 500A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 44ns/250ns
Switching Energy: 2.7mJ (on), 3.5mJ (off)
Test Condition: 480V, 100A, 1Ohm, 15V
Gate Charge: 585 nC
Part Status: Active
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 1200 A
Power - Max: 1700 W
на замовлення 223 шт:
термін постачання 21-31 дні (днів)
1+2995.79 грн
30+1933.35 грн
120+1858.96 грн
В кошику  од. на суму  грн.
IXGX55N120A3H1 IXGX55N120A3H1 IXYS media?resourcetype=datasheets&itemid=0b246b35-b876-4e29-9349-439823204dc3&filename=littelfuse_discrete_igbts_pt_ixg_55n120a3h1_datasheet.pdf Description: IGBT 1200V 125A 460W PLUS247
Power - Max: 460 W
Current - Collector Pulsed (Icm): 400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 125 A
Gate Charge: 185 nC
Test Condition: 960V, 55A, 3Ohm, 15V
Switching Energy: 5.1mJ (on), 13.3mJ (off)
Td (on/off) @ 25°C: 23ns/365ns
IGBT Type: PT
Supplier Device Package: PLUS247™-3
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 55A
Reverse Recovery Time (trr): 200 ns
Input Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
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 Мінімальне замовлення: 300 шт
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IXGX64N60B3D1 IXGX64N60B3D1 IXYS Description: IGBT 600V 460W PLUS247
Part Status: Obsolete
Gate Charge: 168 nC
Test Condition: 480V, 50A, 3Ohm, 15V
Switching Energy: 1.5mJ (on), 1mJ (off)
Td (on/off) @ 25°C: 25ns/138ns
IGBT Type: PT
Supplier Device Package: PLUS247™-3
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Reverse Recovery Time (trr): 35 ns
Input Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Power - Max: 460 W
Current - Collector Pulsed (Icm): 400 A
Voltage - Collector Emitter Breakdown (Max): 600 V
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IXGX82N120A3 IXGX82N120A3 IXYS Description: IGBT 1200V 260A 1250W PLUS247
Current - Collector Pulsed (Icm): 580 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 260 A
Part Status: Active
Gate Charge: 340 nC
Test Condition: 600V, 80A, 2Ohm, 15V
Switching Energy: 5.5mJ (on), 12.5mJ (off)
Td (on/off) @ 25°C: 34ns/265ns
IGBT Type: PT
Supplier Device Package: PLUS247™-3
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 82A
Input Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Power - Max: 1250 W
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 Мінімальне замовлення: 30 шт
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IXGX82N120B3 IXGX82N120B3 IXYS Description: IGBT 1200V 230A 1250W PLUS247
Current - Collector (Ic) (Max): 230 A
Part Status: Active
Gate Charge: 350 nC
Test Condition: 600V, 80A, 2Ohm, 15V
Switching Energy: 5mJ (on), 3.3mJ (off)
Td (on/off) @ 25°C: 30ns/210ns
IGBT Type: PT
Supplier Device Package: PLUS247™-3
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
Input Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Power - Max: 1250 W
Current - Collector Pulsed (Icm): 500 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
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IXTA15P15T IXTA15P15T IXYS DS100292A(IXTA-TP-TY15P15T).pdf Description: MOSFET P-CH 150V 15A TO-263
товару немає в наявності
 Мінімальне замовлення: 200 шт
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IXTA26P10T IXTA26P10T IXYS DS100291A(IXTA-TP-TY26P10T).pdf Description: MOSFET P-CH 100V 26A TO-263
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 Мінімальне замовлення: 200 шт
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IXTA460P2 IXTA460P2 IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_460p2_datasheet.pdf.pdf Description: MOSFET N-CH 500V 24A TO263
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 480W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
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IXTA48P05T IXTA48P05T IXYS littelfuse-discrete-mosfets-ixt-48p05t-datasheet?assetguid=62c140ac-c7df-4f51-9814-249b142e0b84 Description: MOSFET P-CH 50V 48A TO263
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
на замовлення 3795 шт:
термін постачання 21-31 дні (днів)
2+296.79 грн
50+155.60 грн
100+152.57 грн
500+129.49 грн
1000+122.98 грн
Мінімальне замовлення: 2 шт
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IXTH140P10T IXTH140P10T IXYS littelfuse_discrete_mosfets_p-channel_ixt_140p10t_datasheet.pdf.pdf Description: MOSFET P-CH 100V 140A TO247
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 31400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 568W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
на замовлення 37 шт:
термін постачання 21-31 дні (днів)
1+1471.55 грн
10+1302.43 грн
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IXTH300N04T2 IXTH300N04T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixth300n04t2_datasheet.pdf.pdf Description: MOSFET N-CH 40V 300A TO247
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 480W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXTH420N04T2 IXTH420N04T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixth420n04t2_datasheet.pdf.pdf Description: MOSFET N-CH 40V 420A TO247
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IXTH460P2 IXTH460P2 IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_460p2_datasheet.pdf.pdf Description: MOSFET N-CH 500V 24A TO247
Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 480W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 30 шт
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IXTH4N150 IXTH4N150 IXYS DS100287BIXTH4N150.pdf Description: MOSFET N-CH 1500V 4A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 2A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 44.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1576 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXTH50N25T IXTH50N25T IXYS littelfuse-discrete-mosfets-ixt-50n25t-datasheet?assetguid=d7f19b2b-0219-4b0c-a29d-b093518ee586 Description: MOSFET N-CH 250V 50A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 120 шт
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IXTJ4N150 IXTJ4N150 IXYS IXTJ4N150.pdf Description: MOSFET N-CH 1500V 2.5A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 2A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: ISO247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 44.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1576 pF @ 25 V
на замовлення 292 шт:
термін постачання 21-31 дні (днів)
1+1061.62 грн
30+626.17 грн
120+539.40 грн
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IXFR58N20 98591.pdf
IXFR58N20
Виробник: IXYS
Description: MOSFET N-CH 200V 50A ISOPLUS247
товару немає в наявності
Мінімальне замовлення: 60 шт
В кошику  од. на суму  грн.
IXFR80N60P3 media?resourcetype=datasheets&itemid=009C6FF2-024A-4E5F-BFDB-8F99ACAA6258&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFR80N60P3-Datasheet.PDF
IXFR80N60P3
Виробник: IXYS
Description: MOSFET N-CH 600V 48A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 76mOhm @ 40A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFT150N20T media?resourcetype=datasheets&itemid=2BBF3AE5-6A29-4FA7-BB1A-5FFF3B64FA7D&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXF-150N20T-Datasheet.PDF
IXFT150N20T
Виробник: IXYS
Description: MOSFET N-CH 200V 150A TO268
Input Capacitance (Ciss) (Max) @ Vds: 11700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 890W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 300 шт
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IXFT320N10T2 littelfuse-discrete-mosfets-ixf-320n10t2-datasheet?assetguid=99cd63b2-fc21-4394-81cf-ea2bb2be118d
IXFT320N10T2
Виробник: IXYS
Description: MOSFET N-CH 100V 320A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 1000W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 26000 pF @ 25 V
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IXFT94N30T DS100383A(IXFH-T94N30T).pdf
IXFT94N30T
Виробник: IXYS
Description: MOSFET N-CH 300V 94A TO268
на замовлення 3690 шт:
термін постачання 21-31 дні (днів)
Мінімальне замовлення: 30 шт
В кошику  од. на суму  грн.
IXFX250N10P littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_250n10p_datasheet.pdf.pdf
IXFX250N10P
Виробник: IXYS
Description: MOSFET N-CH 100V 250A PLUS247-3
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PLUS247™-3
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 1250W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 30 шт
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IXFY4N60P3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_4n60p3_datasheet.pdf.pdf
IXFY4N60P3
Виробник: IXYS
Description: MOSFET N-CH 600V 4A TO252
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IXFZ520N075T2 media?resourcetype=datasheets&itemid=867EADBD-B9E8-4949-8497-F2EAC382E420&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXFZ520N075T2-Datasheet.PDF
IXFZ520N075T2
Виробник: IXYS
Description: MOSFET N-CH 75V 465A DE475
Packaging: Tube
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 465A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: DE475
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 41000 pF @ 25 V
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IXGA12N120A3 littelfuse_discrete_igbts_pt_ixg_12n120a3_datasheet.pdf.pdf
IXGA12N120A3
Виробник: IXYS
Description: IGBT 1200V 22A 100W TO263
IGBT Type: PT
Supplier Device Package: TO-263AA
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Power - Max: 100 W
Current - Collector Pulsed (Icm): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 22 A
Gate Charge: 20.4 nC
товару немає в наявності
Мінімальне замовлення: 300 шт
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IXGA20N120B3 littelfuse-discrete-igbts-ixg-20n120b3-datasheet?assetguid=def4a3cc-20a8-4c45-8af2-ba8dcd0c72ff
IXGA20N120B3
Виробник: IXYS
Description: IGBT PT 1200V 36A TO-263AA
Power - Max: 180 W
Current - Collector Pulsed (Icm): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 36 A
Part Status: Active
Gate Charge: 51 nC
Test Condition: 600V, 16A, 15Ohm, 15V
Switching Energy: 920µJ (on), 560µJ (off)
Td (on/off) @ 25°C: 16ns/150ns
IGBT Type: PT
Supplier Device Package: TO-263AA
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 16A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 300 шт
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IXGA50N60C4 DS100298C(IXGA-P-H50N60C4).pdf
IXGA50N60C4
Виробник: IXYS
Description: IGBT 600V 90A 300W TO263
товару немає в наявності
Мінімальне замовлення: 150 шт
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IXGH12N120A3 littelfuse_discrete_igbts_pt_ixg_12n120a3_datasheet.pdf.pdf
IXGH12N120A3
Виробник: IXYS
Description: IGBT 1200V 22A 100W TO247
Power - Max: 100 W
Current - Collector Pulsed (Icm): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 22 A
Gate Charge: 20.4 nC
IGBT Type: PT
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 1620 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
300+189.58 грн
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXGH20N140C3H1 littelfuse_discrete_igbts_pt_ixg_20n140c3h1_datasheet.pdf.pdf
IXGH20N140C3H1
Виробник: IXYS
Description: IGBT 1400V 42A 250W TO247
Power - Max: 250 W
Current - Collector Pulsed (Icm): 108 A
Voltage - Collector Emitter Breakdown (Max): 1400 V
Current - Collector (Ic) (Max): 42 A
Gate Charge: 88 nC
Test Condition: 700V, 20A, 5Ohm, 15V
Switching Energy: 1.35mJ (on), 440µJ (off)
Td (on/off) @ 25°C: 19ns/110ns
IGBT Type: PT
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 20A
Reverse Recovery Time (trr): 70 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXGH24N60C4
Виробник: IXYS
Description: IGBT PT 600V 56A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/143ns
Switching Energy: 400µJ (on), 300µJ (off)
Test Condition: 360V, 24A, 10Ohm, 15V
Gate Charge: 64 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 56 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 130 A
Power - Max: 190 W
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IXGH24N60C4D1
Виробник: IXYS
Description: IGBT PT 600V 56A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/143ns
Switching Energy: 400µJ (on), 300µJ (off)
Test Condition: 360V, 24A, 10Ohm, 15V
Gate Charge: 64 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 56 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 130 A
Power - Max: 190 W
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IXGH28N140B3H1 littelfuse_discrete_igbts_pt_ixg_28n140b3h1_datasheet.pdf.pdf
IXGH28N140B3H1
Виробник: IXYS
Description: IGBT 1400V 60A 300W TO247
Power - Max: 300 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 1400 V
Current - Collector (Ic) (Max): 60 A
Gate Charge: 88 nC
Test Condition: 960V, 28A, 5Ohm, 15V
Switching Energy: 3.6mJ (on), 3.9mJ (off)
Td (on/off) @ 25°C: 16ns/190ns
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 28A
Reverse Recovery Time (trr): 350 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXGH30N60B4
IXGH30N60B4
Виробник: IXYS
Description: IGBT PT 600V 66A TO-247AD
Power - Max: 190 W
Current - Collector Pulsed (Icm): 156 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 66 A
Gate Charge: 77 nC
Test Condition: 400V, 24A, 10Ohm, 15V
Switching Energy: 440µJ (on), 700µJ (off)
Td (on/off) @ 25°C: 21ns/200ns
IGBT Type: PT
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 24A
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
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IXGH36N60A3 littelfuse-discrete-igbts-ixg-36n60a3-datasheet?assetguid=c23e0bfa-71be-4fc5-95ce-1a86be9b836e
IXGH36N60A3
Виробник: IXYS
Description: IGBT PT 600V TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/330ns
Switching Energy: 740µJ (on), 3mJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 80 nC
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 220 W
товару немає в наявності
Мінімальне замовлення: 30 шт
В кошику  од. на суму  грн.
IXGH36N60B3 littelfuse-discrete-igbts-ixgh36n60b3-datasheet?assetguid=b1803890-5b28-411c-a8c3-a6d8847339c8
IXGH36N60B3
Виробник: IXYS
Description: IGBT PT 600V 92A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/125ns
Switching Energy: 540µJ (on), 800µJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 92 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 250 W
на замовлення 392 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+480.44 грн
30+264.51 грн
120+220.96 грн
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IXGH50N60C4 DS100298C(IXGA-P-H50N60C4).pdf
IXGH50N60C4
Виробник: IXYS
Description: IGBT 600V 90A 300W TO247
Power - Max: 300 W
Current - Collector Pulsed (Icm): 220 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 90 A
Part Status: Obsolete
Gate Charge: 113 nC
Test Condition: 400V, 36A, 10Ohm, 15V
Switching Energy: 950µJ (on), 840µJ (off)
Td (on/off) @ 25°C: 40ns/270ns
IGBT Type: PT
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 36A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXGH56N60A3 littelfuse-discrete-igbts-ixgh56n60a3-datasheet?assetguid=36f75a5a-a641-4d71-802a-ec49621c881d
IXGH56N60A3
Виробник: IXYS
Description: IGBT PT 600V 150A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 44A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 26ns/310ns
Switching Energy: 1mJ (on), 3.75mJ (off)
Test Condition: 480V, 44A, 5Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 370 A
Power - Max: 330 W
товару немає в наявності
Мінімальне замовлення: 30 шт
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IXGH56N60B3D1 littelfuse_discrete_igbts_pt_ixgh56n60b3d1_datasheet.pdf.pdf
IXGH56N60B3D1
Виробник: IXYS
Description: IGBT PT 600V TO-247AD
Power - Max: 330 W
Current - Collector Pulsed (Icm): 350 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Gate Charge: 138 nC
Test Condition: 480V, 44A, 5Ohm, 15V
Switching Energy: 1.3mJ (on), 1.05mJ (off)
Td (on/off) @ 25°C: 26ns/155ns
IGBT Type: PT
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 44A
Reverse Recovery Time (trr): 100 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 30 шт
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IXGH64N60A3 littelfuse_discrete_igbts_pt_ixg_64n60a3_datasheet.pdf.pdf
IXGH64N60A3
Виробник: IXYS
Description: IGBT 600V 460W TO247
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IXGH64N60B3 littelfuse-discrete-igbts-ixg-64n60b3-datasheet?assetguid=2327aeab-d06f-45ab-8c72-805732caec63
IXGH64N60B3
Виробник: IXYS
Description: IGBT PT 600V TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/138ns
Switching Energy: 1.5mJ (on), 1mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 168 nC
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 460 W
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IXGK320N60B3 littelfuse-discrete-igbts-ixg-320n60b3-datasheet?assetguid=448e088e-56ea-48d2-b291-c14c7820b437
IXGK320N60B3
Виробник: IXYS
Description: IGBT PT 600V 500A TO-264
Power - Max: 1700 W
Current - Collector Pulsed (Icm): 1200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 500 A
Part Status: Active
Switching Energy: 2.7mJ (on), 3.5mJ (off)
Td (on/off) @ 25°C: 44ns/250ns
IGBT Type: PT
Supplier Device Package: TO-264 (IXGK)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Gate Charge: 585 nC
Test Condition: 480V, 100A, 1Ohm, 15V
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IXGK55N120A3H1
IXGK55N120A3H1
Виробник: IXYS
Description: IGBT PT 1200V 125A TO-264
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Power - Max: 460 W
Current - Collector Pulsed (Icm): 400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 125 A
Gate Charge: 185 nC
Test Condition: 960V, 55A, 3Ohm, 15V
Switching Energy: 5.1mJ (on), 13.3mJ (off)
Td (on/off) @ 25°C: 23ns/365ns
IGBT Type: PT
Supplier Device Package: TO-264 (IXGK)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 55A
Reverse Recovery Time (trr): 200 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
товару немає в наявності
Мінімальне замовлення: 300 шт
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IXGK82N120A3 littelfuse_discrete_igbts_pt_ixg_82n120a3_datasheet.pdf.pdf
IXGK82N120A3
Виробник: IXYS
Description: IGBT 1200V 260A 1250W TO264
Power - Max: 1250 W
Current - Collector Pulsed (Icm): 580 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 260 A
Gate Charge: 340 nC
Test Condition: 600V, 80A, 2Ohm, 15V
Switching Energy: 5.5mJ (on), 12.5mJ (off)
Td (on/off) @ 25°C: 34ns/265ns
IGBT Type: PT
Supplier Device Package: TO-264 (IXGK)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 82A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 300 шт
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IXGK82N120B3 littelfuse_discrete_igbts_pt_ixg_82n120b3_datasheet.pdf.pdf
IXGK82N120B3
Виробник: IXYS
Description: IGBT 1200V 230A 1250W TO264
Packaging: Tube
Current - Collector (Ic) (Max): 230 A
Gate Charge: 350 nC
Test Condition: 600V, 80A, 2Ohm, 15V
Switching Energy: 5mJ (on), 3.3mJ (off)
Td (on/off) @ 25°C: 30ns/210ns
IGBT Type: PT
Supplier Device Package: TO-264 (IXGK)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Power - Max: 1250 W
Current - Collector Pulsed (Icm): 500 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
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Мінімальне замовлення: 300 шт
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IXGN400N60B3 littelfuse-discrete-igbts-ixgn400n60b3-datasheet?assetguid=6c880e02-cb87-465f-a3ab-914a55cd1323
IXGN400N60B3
Виробник: IXYS
Description: IGBT MODULE 600V 430A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 430 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1000 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 31 nF @ 25 V
на замовлення 134 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+5134.54 грн
10+3821.63 грн
100+3616.11 грн
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IXGN50N120C3H1 media?resourcetype=datasheets&itemid=22C23490-17BF-4D83-B043-E4F6CEAFB2F9&filename=Littelfuse-Discrete-IGBTs-PT-IXGN50N120C3H1-Datasheet.PDF
IXGN50N120C3H1
Виробник: IXYS
Description: IGBT MOD 1200V 95A 460W SOT-227B
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 460 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 95 A
Part Status: Active
IGBT Type: PT
Supplier Device Package: SOT-227B
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 40A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 300 шт
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IXGN82N120B3H1 littelfuse_discrete_igbts_pt_ixgn82n120b3h1_datasheet.pdf.pdf
IXGN82N120B3H1
Виробник: IXYS
Description: IGBT MOD 1200V 145A 595W SOT227B
Input Capacitance (Cies) @ Vce: 7.9 nF @ 25 V
Current - Collector Cutoff (Max): 50 µA
Power - Max: 595 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 145 A
Part Status: Discontinued at Digi-Key
IGBT Type: PT
Supplier Device Package: SOT-227B
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 10 шт
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IXGP12N120A3 littelfuse_discrete_igbts_pt_ixg_12n120a3_datasheet.pdf.pdf
IXGP12N120A3
Виробник: IXYS
Description: IGBT 1200V 22A 100W TO220
Power - Max: 100 W
Current - Collector Pulsed (Icm): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 22 A
Part Status: Active
Gate Charge: 20.4 nC
IGBT Type: PT
Supplier Device Package: TO-220-3
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-220-3
на замовлення 1168 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+309.96 грн
30+177.67 грн
120+149.72 грн
510+122.25 грн
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IXGP24N60C4 DS100253B(IXGA-H-P24N60C4).pdf
IXGP24N60C4
Виробник: IXYS
Description: IGBT 600V 56A 190W TO220
Power - Max: 190 W
Current - Collector Pulsed (Icm): 130 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 56 A
Part Status: Obsolete
Gate Charge: 64 nC
Test Condition: 360V, 24A, 10Ohm, 15V
Switching Energy: 400µJ (on), 300µJ (off)
Td (on/off) @ 25°C: 21ns/143ns
IGBT Type: PT
Supplier Device Package: TO-220-3
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IXGP24N60C4D1 DS100257A(IXGP24N60C4D1).pdf
IXGP24N60C4D1
Виробник: IXYS
Description: IGBT 600V 56A 190W TO220
Power - Max: 190 W
Current - Collector Pulsed (Icm): 130 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 56 A
Part Status: Obsolete
Gate Charge: 64 nC
Test Condition: 360V, 24A, 10Ohm, 15V
Switching Energy: 350µJ (on), 340µJ (off)
Td (on/off) @ 25°C: 22ns/192ns
IGBT Type: PT
Supplier Device Package: TO-220-3
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Reverse Recovery Time (trr): 30 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IXGP30N60B4D1
IXGP30N60B4D1
Виробник: IXYS
Description: IGBT 600V 56A 190W TO220
Packaging: Tube
Power - Max: 190 W
Current - Collector Pulsed (Icm): 156 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 56 A
Gate Charge: 77 nC
Test Condition: 400V, 24A, 10Ohm, 15V
Switching Energy: 440µJ (on), 700µJ (off)
Td (on/off) @ 25°C: 21ns/200ns
IGBT Type: PT
Supplier Device Package: TO-220-3
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 24A
Reverse Recovery Time (trr): 30 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
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IXGP50N60C4 DS100298C(IXGA-P-H50N60C4).pdf
IXGP50N60C4
Виробник: IXYS
Description: IGBT 600V 90A 300W TO220
товару немає в наявності
Мінімальне замовлення: 200 шт
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IXGQ50N60B4D1 DS100318C(IXGQ-H50N60B4D1).pdf
IXGQ50N60B4D1
Виробник: IXYS
Description: IGBT 600V 100A 300W TO3P
Power - Max: 300 W
Current - Collector Pulsed (Icm): 230 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
Gate Charge: 110 nC
Test Condition: 400V, 36A, 10Ohm, 15V
Switching Energy: 930µJ (on), 1mJ (off)
Td (on/off) @ 25°C: 37ns/330ns
IGBT Type: PT
Supplier Device Package: TO-3P
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A
Reverse Recovery Time (trr): 25 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
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IXGQ50N60C4D1 DS100297D(IXGH-Q50N60C4D1).pdf
IXGQ50N60C4D1
Виробник: IXYS
Description: IGBT 600V 90A 300W TO3P
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 36A
Reverse Recovery Time (trr): 25 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Power - Max: 300 W
Current - Collector Pulsed (Icm): 220 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 90 A
Gate Charge: 113 nC
Test Condition: 400V, 36A, 10Ohm, 15V
Switching Energy: 950µJ (on), 840µJ (off)
Td (on/off) @ 25°C: 40ns/270ns
IGBT Type: PT
Supplier Device Package: TO-3P
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IXGR55N120A3H1
IXGR55N120A3H1
Виробник: IXYS
Description: IGBT PT 1200V 70A ISOPLUS247
Gate Charge: 185 nC
Test Condition: 960V, 55A, 3Ohm, 15V
Switching Energy: 5.1mJ (on), 13.3mJ (off)
Td (on/off) @ 25°C: 23ns/365ns
IGBT Type: PT
Supplier Device Package: ISOPLUS247™
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 55A
Reverse Recovery Time (trr): 200 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 200 W
Current - Collector Pulsed (Icm): 330 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 70 A
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXGR6N170A littelfuse-discrete-igbts-ixgr6n170a-datasheet?assetguid=e8bac480-2930-4ec3-906b-91f408d5b342
IXGR6N170A
Виробник: IXYS
Description: IGBT 1700V 5.5A ISOPLUS247
Power - Max: 50 W
Current - Collector Pulsed (Icm): 18 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 5.5 A
Part Status: Active
Gate Charge: 18.5 nC
Test Condition: 850V, 6A, 33Ohm, 15V
Switching Energy: 590µJ (on), 180µJ (off)
Td (on/off) @ 25°C: 46ns/220ns
Supplier Device Package: ISOPLUS247™
Vce(on) (Max) @ Vge, Ic: 7V @ 15V, 3A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXGT20N140C3H1 DS100251(IXGH-GT20N140C3H1).pdf
IXGT20N140C3H1
Виробник: IXYS
Description: IGBT 1400V 42A 250W TO268
товару немає в наявності
Мінімальне замовлення: 30 шт
В кошику  од. на суму  грн.
IXGT72N60B3
IXGT72N60B3
Виробник: IXYS
Description: IGBT 600V 75A 540W TO268
Td (on/off) @ 25°C: 31ns/150ns
IGBT Type: PT
Supplier Device Package: TO-268AA
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 60A
Input Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Packaging: Tube
Power - Max: 540 W
Current - Collector Pulsed (Icm): 400 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 75 A
Part Status: Obsolete
Gate Charge: 230 nC
Test Condition: 480V, 50A, 3Ohm, 15V
Switching Energy: 1.38mJ (on), 1.05mJ (off)
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IXGX120N120B3 media?resourcetype=datasheets&itemid=5366A0CF-0BA0-4D32-972E-C98515FBEF79&filename=Littelfuse-Discrete-IGBTs-PT-IXG-120N120B3-Datasheet.PDF
IXGX120N120B3
Виробник: IXYS
Description: IGBT PT 1200V 200A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 36ns/275ns
Switching Energy: 5.5mJ (on), 5.8mJ (off)
Test Condition: 600V, 100A, 2Ohm, 15V
Gate Charge: 470 nC
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 370 A
Power - Max: 830 W
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IXGX28N140B3H1
IXGX28N140B3H1
Виробник: IXYS
Description: IGBT 1400V 60A 300W PLUS247
товару немає в наявності
Мінімальне замовлення: 30 шт
В кошику  од. на суму  грн.
IXGX320N60B3 littelfuse-discrete-igbts-ixg-320n60b3-datasheet?assetguid=448e088e-56ea-48d2-b291-c14c7820b437
IXGX320N60B3
Виробник: IXYS
Description: IGBT PT 600V 500A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 44ns/250ns
Switching Energy: 2.7mJ (on), 3.5mJ (off)
Test Condition: 480V, 100A, 1Ohm, 15V
Gate Charge: 585 nC
Part Status: Active
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 1200 A
Power - Max: 1700 W
на замовлення 223 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2995.79 грн
30+1933.35 грн
120+1858.96 грн
В кошику  од. на суму  грн.
IXGX55N120A3H1 media?resourcetype=datasheets&itemid=0b246b35-b876-4e29-9349-439823204dc3&filename=littelfuse_discrete_igbts_pt_ixg_55n120a3h1_datasheet.pdf
IXGX55N120A3H1
Виробник: IXYS
Description: IGBT 1200V 125A 460W PLUS247
Power - Max: 460 W
Current - Collector Pulsed (Icm): 400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 125 A
Gate Charge: 185 nC
Test Condition: 960V, 55A, 3Ohm, 15V
Switching Energy: 5.1mJ (on), 13.3mJ (off)
Td (on/off) @ 25°C: 23ns/365ns
IGBT Type: PT
Supplier Device Package: PLUS247™-3
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 55A
Reverse Recovery Time (trr): 200 ns
Input Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXGX64N60B3D1
IXGX64N60B3D1
Виробник: IXYS
Description: IGBT 600V 460W PLUS247
Part Status: Obsolete
Gate Charge: 168 nC
Test Condition: 480V, 50A, 3Ohm, 15V
Switching Energy: 1.5mJ (on), 1mJ (off)
Td (on/off) @ 25°C: 25ns/138ns
IGBT Type: PT
Supplier Device Package: PLUS247™-3
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Reverse Recovery Time (trr): 35 ns
Input Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Power - Max: 460 W
Current - Collector Pulsed (Icm): 400 A
Voltage - Collector Emitter Breakdown (Max): 600 V
товару немає в наявності
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IXGX82N120A3
IXGX82N120A3
Виробник: IXYS
Description: IGBT 1200V 260A 1250W PLUS247
Current - Collector Pulsed (Icm): 580 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 260 A
Part Status: Active
Gate Charge: 340 nC
Test Condition: 600V, 80A, 2Ohm, 15V
Switching Energy: 5.5mJ (on), 12.5mJ (off)
Td (on/off) @ 25°C: 34ns/265ns
IGBT Type: PT
Supplier Device Package: PLUS247™-3
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 82A
Input Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Power - Max: 1250 W
товару немає в наявності
Мінімальне замовлення: 30 шт
В кошику  од. на суму  грн.
IXGX82N120B3
IXGX82N120B3
Виробник: IXYS
Description: IGBT 1200V 230A 1250W PLUS247
Current - Collector (Ic) (Max): 230 A
Part Status: Active
Gate Charge: 350 nC
Test Condition: 600V, 80A, 2Ohm, 15V
Switching Energy: 5mJ (on), 3.3mJ (off)
Td (on/off) @ 25°C: 30ns/210ns
IGBT Type: PT
Supplier Device Package: PLUS247™-3
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
Input Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Power - Max: 1250 W
Current - Collector Pulsed (Icm): 500 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
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IXTA15P15T DS100292A(IXTA-TP-TY15P15T).pdf
IXTA15P15T
Виробник: IXYS
Description: MOSFET P-CH 150V 15A TO-263
товару немає в наявності
Мінімальне замовлення: 200 шт
В кошику  од. на суму  грн.
IXTA26P10T DS100291A(IXTA-TP-TY26P10T).pdf
IXTA26P10T
Виробник: IXYS
Description: MOSFET P-CH 100V 26A TO-263
товару немає в наявності
Мінімальне замовлення: 200 шт
В кошику  од. на суму  грн.
IXTA460P2 littelfuse_discrete_mosfets_n-channel_standard_ixt_460p2_datasheet.pdf.pdf
IXTA460P2
Виробник: IXYS
Description: MOSFET N-CH 500V 24A TO263
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 480W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
товару немає в наявності
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IXTA48P05T littelfuse-discrete-mosfets-ixt-48p05t-datasheet?assetguid=62c140ac-c7df-4f51-9814-249b142e0b84
IXTA48P05T
Виробник: IXYS
Description: MOSFET P-CH 50V 48A TO263
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
на замовлення 3795 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+296.79 грн
50+155.60 грн
100+152.57 грн
500+129.49 грн
1000+122.98 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXTH140P10T littelfuse_discrete_mosfets_p-channel_ixt_140p10t_datasheet.pdf.pdf
IXTH140P10T
Виробник: IXYS
Description: MOSFET P-CH 100V 140A TO247
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 31400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 568W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
на замовлення 37 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1471.55 грн
10+1302.43 грн
В кошику  од. на суму  грн.
IXTH300N04T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixth300n04t2_datasheet.pdf.pdf
IXTH300N04T2
Виробник: IXYS
Description: MOSFET N-CH 40V 300A TO247
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 480W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTH420N04T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixth420n04t2_datasheet.pdf.pdf
IXTH420N04T2
Виробник: IXYS
Description: MOSFET N-CH 40V 420A TO247
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IXTH460P2 littelfuse_discrete_mosfets_n-channel_standard_ixt_460p2_datasheet.pdf.pdf
IXTH460P2
Виробник: IXYS
Description: MOSFET N-CH 500V 24A TO247
Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 480W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 30 шт
В кошику  од. на суму  грн.
IXTH4N150 DS100287BIXTH4N150.pdf
IXTH4N150
Виробник: IXYS
Description: MOSFET N-CH 1500V 4A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 2A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 44.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1576 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTH50N25T littelfuse-discrete-mosfets-ixt-50n25t-datasheet?assetguid=d7f19b2b-0219-4b0c-a29d-b093518ee586
IXTH50N25T
Виробник: IXYS
Description: MOSFET N-CH 250V 50A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 120 шт
В кошику  од. на суму  грн.
IXTJ4N150 IXTJ4N150.pdf
IXTJ4N150
Виробник: IXYS
Description: MOSFET N-CH 1500V 2.5A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 2A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: ISO247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 44.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1576 pF @ 25 V
на замовлення 292 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1061.62 грн
30+626.17 грн
120+539.40 грн
В кошику  од. на суму  грн.
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