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CDLL752A CDLL752A Microchip Technology 5907-1n746aur-1n4370aur-datasheet Description: DIODE ZENER 5.6V 500MW DO213AB
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2.5 V
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CDLL753 CDLL753 Microchip Technology 5907-1n746aur-1n4370aur-datasheet Description: DIODE ZENER 6.2V 500MW DO213AB
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3.5 V
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CDLL755 CDLL755 Microchip Technology 5907-1n746aur-1n4370aur-datasheet Description: DIODE ZENER 7.5V 500MW DO213AB
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 5 V
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CDLL914 Microchip Technology 125210-lds-0279-1-datasheet Description: DIODE GEN PURP 75V 200MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 75 V
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CDLL957A CDLL957A Microchip Technology 5917-1n962bur-datasheet Description: DIODE ZENER 6.8V 500MW DO213AB
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 5.2 V
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CDLL957B CDLL957B Microchip Technology 5917-1n962bur-datasheet Description: DIODE ZENER 6.8V 500MW DO213AB
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 5.2 V
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CDLL958 CDLL958 Microchip Technology 5917-1n962bur-datasheet Description: DIODE ZENER 7.5V 500MW DO213AB
Packaging: Bulk
Tolerance: ±20%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 5.5 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 5.7 V
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CDLL958B CDLL958B Microchip Technology 5917-1n962bur-datasheet Description: DIODE ZENER 7.5V 500MW DO213AB
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 5.5 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 5.7 V
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CDLL959 CDLL959 Microchip Technology 5917-1n962bur-datasheet Description: DIODE ZENER 8.2V 500MW DO213AB
Packaging: Bulk
Tolerance: ±20%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 6.5 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 6.2 V
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CDLL960B CDLL960B Microchip Technology 5917-1n962bur-datasheet Description: DIODE ZENER 9.1V 500MW DO213AB
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 7.5 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 6.9 V
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CDLL961 CDLL961 Microchip Technology 5917-1n962bur-datasheet Description: DIODE ZENER 10V 500MW DO213AB
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CDLL961A CDLL961A Microchip Technology 5917-1n962bur-datasheet Description: DIODE ZENER 10V 500MW DO213AB
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CDLL961B CDLL961B Microchip Technology 5917-1n962bur-datasheet Description: DIODE ZENER 10V 500MW DO213AB
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CDLL963A CDLL963A Microchip Technology 5917-1n962bur-datasheet Description: DIODE ZENER 12V 500MW DO213AB
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 11.5 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
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CDLL965A CDLL965A Microchip Technology 5917-1n962bur-datasheet Description: DIODE ZENER 15V 500MW DO213AB
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
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CDLL965B CDLL965B Microchip Technology 5917-1n962bur-datasheet Description: DIODE ZENER 15V 500MW DO213AB
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
на замовлення 314 шт:
термін постачання 21-31 дні (днів)
2+230.22 грн
Мінімальне замовлення: 2
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CDLL966A CDLL966A Microchip Technology 5917-1n962bur-datasheet Description: DIODE ZENER 16V 500MW DO213AB
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12 V
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CDLL969B CDLL969B Microchip Technology 5917-1n962bur-datasheet Description: DIODE ZENER 22V 500MW DO213AB
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CDLL975 CDLL975 Microchip Technology 5917-1n962bur-datasheet Description: DIODE ZENER 39V 500MW DO213AB
Packaging: Bulk
Tolerance: ±20%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
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CDLL975A CDLL975A Microchip Technology 5917-1n962bur-datasheet Description: DIODE ZENER 39V 500MW DO213AB
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
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CDLL975B CDLL975B Microchip Technology 5917-1n962bur-datasheet Description: DIODE ZENER 39V 500MW DO213AB
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
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CDLL982 CDLL982 Microchip Technology 5917-1n962bur-datasheet Description: DIODE ZENER 75V 500MW DO213AB
Packaging: Bulk
Tolerance: ±20%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 270 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 56 V
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CDLL982A CDLL982A Microchip Technology 5917-1n962bur-datasheet Description: DIODE ZENER 75V 500MW DO213AB
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 270 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 56 V
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CDLL982B CDLL982B Microchip Technology 5917-1n962bur-datasheet Description: DIODE ZENER 75V 500MW DO213AB
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 270 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 56 V
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CDLL990B CDLL990B Microchip Technology Description: DIODE ZENER 160V 500MW DO213AA
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 1700 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
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CDLL991B CDLL991B Microchip Technology Description: DIODE ZENER 180V 500MW DO213AA
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 2200 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
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CDLL992B CDLL992B Microchip Technology Description: DIODE ZENER 200V 500MW DO213AA
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 2500 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
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JAN1N3957 JAN1N3957 Microchip Technology 123512-lds-0190-datasheet Description: DIODE GEN PURP 1KV 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 300 V
Qualification: MIL-PRF-19500/228
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JAN1N4942 JAN1N4942 Microchip Technology 129281-lds-0295-datasheet Description: DIODE STANDARD 200V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Grade: Military
Qualification: MIL-PRF-19500/359
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JAN1N4944 JAN1N4944 Microchip Technology 129281-lds-0295-datasheet Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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JAN1N4960US JAN1N4960US Microchip Technology 11059-sd44a-datasheet Description: DIODE ZENER 12V 5W D5B
Packaging: Bulk
Tolerance: ±5%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: D-5B
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 9.1 V
Qualification: MIL-PRF-19500/356
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JAN1N4980 JAN1N4980 Microchip Technology 10913-sa5-37-datasheet Description: DIODE ZENER 82V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 80 Ohms
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 62.2 V
Qualification: MIL-PRF-19500/356
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JAN1N4980US JAN1N4980US Microchip Technology 11059-sd44a-datasheet Description: DIODE ZENER 82V 5W D5B
Packaging: Bulk
Tolerance: ±5%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: D-5B
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 62.2 V
Qualification: MIL-PRF-19500/356
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JAN1N5415 JAN1N5415 Microchip Technology 124360-lds-0231-datasheet Description: DIODE GEN PURP 50V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Qualification: MIL-PRF-19500/411
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JAN1N5415US Microchip Technology 11075-lds-0231-1-datasheet Description: DIODE GEN PURP 50V 3A AXIAL
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JAN1N5416 JAN1N5416 Microchip Technology 124360-lds-0231-datasheet Description: DIODE STANDARD 100V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: MIL-PRF-19500/411
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JAN1N5416US JAN1N5416US Microchip Technology 11075-lds-0231-1-datasheet Description: DIODE STANDARD 100V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: MIL-PRF-19500/411
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JAN1N5417 JAN1N5417 Microchip Technology 124360-lds-0231-datasheet Description: DIODE STANDARD 200V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: MIL-PRF-19500/411
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JAN1N5417US JAN1N5417US Microchip Technology 11075-lds-0231-1-datasheet Description: DIODE STANDARD 200V 3A B SQMELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: MIL-PRF-19500/411
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JAN1N5418 JAN1N5418 Microchip Technology 124360-lds-0231-datasheet Description: DIODE GEN PURP 400V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: MIL-PRF-19500/411
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JAN1N5418US JAN1N5418US Microchip Technology 11075-lds-0231-1-datasheet Description: DIODE GEN PURP 400V 3A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: MIL-PRF-19500/411
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JAN1N5419 JAN1N5419 Microchip Technology 124360-lds-0231-datasheet Description: DIODE GEN PURP 500V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 500 V
Qualification: MIL-PRF-19500/411
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JAN1N5419US JAN1N5419US Microchip Technology 11075-lds-0231-1-datasheet Description: DIODE GEN PURP 500V 3A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 500 V
Qualification: MIL-PRF-19500/411
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JAN1N5420 JAN1N5420 Microchip Technology 124360-lds-0231-datasheet Description: DIODE GEN PURP 600V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: MIL-PRF-19500/411
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JAN1N5420US JAN1N5420US Microchip Technology 11075-lds-0231-1-datasheet Description: DIODE GEN PURP 600V 3A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: MIL-PRF-19500/411
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JAN1N5550 JAN1N5550 Microchip Technology 11519-lds-0230-datasheet Description: DIODE STANDARD 200V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: MIL-PRF-19500/420
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термін постачання 21-31 дні (днів)
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100+359.84 грн
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JAN1N5551 JAN1N5551 Microchip Technology 11519-lds-0230-datasheet Description: DIODE GEN PURP 400V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: MIL-PRF-19500/420
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JAN1N5552 JAN1N5552 Microchip Technology 11519-lds-0230-datasheet Description: DIODE STANDARD 600V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: MIL-PRF-19500/420
на замовлення 124 шт:
термін постачання 21-31 дні (днів)
1+343.72 грн
100+307.36 грн
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JAN1N5553 JAN1N5553 Microchip Technology 11519-lds-0230-datasheet Description: DIODE GEN PURP 800V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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JAN1N5554 JAN1N5554 Microchip Technology 11519-lds-0230-datasheet Description: DIODE GEN PURP 1KV 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Qualification: MIL-PRF-19500/420
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JAN1N5804 JAN1N5804 Microchip Technology 1N5802%2C1N5804%2C1N5806.pdf Description: DIODE GEN PURP 100V 2.5A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: MIL-PRF-19500/477
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JAN1N5804US JAN1N5804US Microchip Technology 132687-lds-0211-1-datasheet Description: DIODE GEN PURP 100V 2.5A D-5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: MIL-PRF-19500/477
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JAN1N5806 JAN1N5806 Microchip Technology Description: DIODE GEN PURP 150V 2.5A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/477
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JAN1N5811 JAN1N5811 Microchip Technology 123509-lds-0168-datasheet Description: DIODE GEN PURP 150V 6A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Grade: Military
Qualification: MIL-PRF-19500/477
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JAN1N5811US JAN1N5811US Microchip Technology 124792-lds-0168-1-datasheet Description: DIODE GEN PURP 150V 6A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Grade: Military
Qualification: MIL-PRF-19500/477
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JAN1N6118A JAN1N6118A Microchip Technology lds-0277.pdf Description: TVS DIODE 25.1VWM 45.7V AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 25.1V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500/516
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JAN1N6118AUS JAN1N6118AUS Microchip Technology lds-0277-1.pdf Description: TVS DIODE 25.1VWM 45.7VC SQMELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 25.1V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500/516
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JAN1N6126A JAN1N6126A Microchip Technology 127891-lds-0277-datasheet Description: TVS DIODE 51.7VWM 97.1VC AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.1A
Voltage - Reverse Standoff (Typ): 51.7V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 97.1V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
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JAN1N6126AUS JAN1N6126AUS Microchip Technology 127892-lds-0277-1-datasheet Description: TVS DIODE 51.7VWM 97.1VC SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.1A
Voltage - Reverse Standoff (Typ): 51.7V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 97.1V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
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JAN1N6156A Microchip Technology 127853-1n6138-1n6173a-tvs-diode-series-datasheet Description: TVS DIODE 29.7VWM 53.6VC C AXIAL
Packaging: Bulk
Package / Case: G, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 28A
Voltage - Reverse Standoff (Typ): 29.7V
Supplier Device Package: C, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
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CDLL752A 5907-1n746aur-1n4370aur-datasheet
CDLL752A
Виробник: Microchip Technology
Description: DIODE ZENER 5.6V 500MW DO213AB
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2.5 V
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CDLL753 5907-1n746aur-1n4370aur-datasheet
CDLL753
Виробник: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO213AB
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3.5 V
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CDLL755 5907-1n746aur-1n4370aur-datasheet
CDLL755
Виробник: Microchip Technology
Description: DIODE ZENER 7.5V 500MW DO213AB
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 5 V
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CDLL914 125210-lds-0279-1-datasheet
Виробник: Microchip Technology
Description: DIODE GEN PURP 75V 200MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 75 V
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CDLL957A 5917-1n962bur-datasheet
CDLL957A
Виробник: Microchip Technology
Description: DIODE ZENER 6.8V 500MW DO213AB
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 5.2 V
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CDLL957B 5917-1n962bur-datasheet
CDLL957B
Виробник: Microchip Technology
Description: DIODE ZENER 6.8V 500MW DO213AB
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 5.2 V
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CDLL958 5917-1n962bur-datasheet
CDLL958
Виробник: Microchip Technology
Description: DIODE ZENER 7.5V 500MW DO213AB
Packaging: Bulk
Tolerance: ±20%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 5.5 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 5.7 V
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CDLL958B 5917-1n962bur-datasheet
CDLL958B
Виробник: Microchip Technology
Description: DIODE ZENER 7.5V 500MW DO213AB
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 5.5 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 5.7 V
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CDLL959 5917-1n962bur-datasheet
CDLL959
Виробник: Microchip Technology
Description: DIODE ZENER 8.2V 500MW DO213AB
Packaging: Bulk
Tolerance: ±20%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 6.5 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 6.2 V
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CDLL960B 5917-1n962bur-datasheet
CDLL960B
Виробник: Microchip Technology
Description: DIODE ZENER 9.1V 500MW DO213AB
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 7.5 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 6.9 V
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CDLL961 5917-1n962bur-datasheet
CDLL961
Виробник: Microchip Technology
Description: DIODE ZENER 10V 500MW DO213AB
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CDLL961A 5917-1n962bur-datasheet
CDLL961A
Виробник: Microchip Technology
Description: DIODE ZENER 10V 500MW DO213AB
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CDLL961B 5917-1n962bur-datasheet
CDLL961B
Виробник: Microchip Technology
Description: DIODE ZENER 10V 500MW DO213AB
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CDLL963A 5917-1n962bur-datasheet
CDLL963A
Виробник: Microchip Technology
Description: DIODE ZENER 12V 500MW DO213AB
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 11.5 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
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CDLL965A 5917-1n962bur-datasheet
CDLL965A
Виробник: Microchip Technology
Description: DIODE ZENER 15V 500MW DO213AB
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
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CDLL965B 5917-1n962bur-datasheet
CDLL965B
Виробник: Microchip Technology
Description: DIODE ZENER 15V 500MW DO213AB
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
на замовлення 314 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+230.22 грн
Мінімальне замовлення: 2
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CDLL966A 5917-1n962bur-datasheet
CDLL966A
Виробник: Microchip Technology
Description: DIODE ZENER 16V 500MW DO213AB
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12 V
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CDLL969B 5917-1n962bur-datasheet
CDLL969B
Виробник: Microchip Technology
Description: DIODE ZENER 22V 500MW DO213AB
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CDLL975 5917-1n962bur-datasheet
CDLL975
Виробник: Microchip Technology
Description: DIODE ZENER 39V 500MW DO213AB
Packaging: Bulk
Tolerance: ±20%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
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CDLL975A 5917-1n962bur-datasheet
CDLL975A
Виробник: Microchip Technology
Description: DIODE ZENER 39V 500MW DO213AB
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
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CDLL975B 5917-1n962bur-datasheet
CDLL975B
Виробник: Microchip Technology
Description: DIODE ZENER 39V 500MW DO213AB
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
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CDLL982 5917-1n962bur-datasheet
CDLL982
Виробник: Microchip Technology
Description: DIODE ZENER 75V 500MW DO213AB
Packaging: Bulk
Tolerance: ±20%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 270 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 56 V
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CDLL982A 5917-1n962bur-datasheet
CDLL982A
Виробник: Microchip Technology
Description: DIODE ZENER 75V 500MW DO213AB
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 270 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 56 V
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CDLL982B 5917-1n962bur-datasheet
CDLL982B
Виробник: Microchip Technology
Description: DIODE ZENER 75V 500MW DO213AB
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 270 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 56 V
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CDLL990B
CDLL990B
Виробник: Microchip Technology
Description: DIODE ZENER 160V 500MW DO213AA
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 1700 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
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CDLL991B
CDLL991B
Виробник: Microchip Technology
Description: DIODE ZENER 180V 500MW DO213AA
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 2200 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
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CDLL992B
CDLL992B
Виробник: Microchip Technology
Description: DIODE ZENER 200V 500MW DO213AA
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 2500 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
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JAN1N3957 123512-lds-0190-datasheet
JAN1N3957
Виробник: Microchip Technology
Description: DIODE GEN PURP 1KV 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 300 V
Qualification: MIL-PRF-19500/228
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JAN1N4942 129281-lds-0295-datasheet
JAN1N4942
Виробник: Microchip Technology
Description: DIODE STANDARD 200V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Grade: Military
Qualification: MIL-PRF-19500/359
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JAN1N4944 129281-lds-0295-datasheet
JAN1N4944
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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JAN1N4960US 11059-sd44a-datasheet
JAN1N4960US
Виробник: Microchip Technology
Description: DIODE ZENER 12V 5W D5B
Packaging: Bulk
Tolerance: ±5%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: D-5B
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 9.1 V
Qualification: MIL-PRF-19500/356
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JAN1N4980 10913-sa5-37-datasheet
JAN1N4980
Виробник: Microchip Technology
Description: DIODE ZENER 82V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 80 Ohms
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 62.2 V
Qualification: MIL-PRF-19500/356
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JAN1N4980US 11059-sd44a-datasheet
JAN1N4980US
Виробник: Microchip Technology
Description: DIODE ZENER 82V 5W D5B
Packaging: Bulk
Tolerance: ±5%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: D-5B
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 62.2 V
Qualification: MIL-PRF-19500/356
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JAN1N5415 124360-lds-0231-datasheet
JAN1N5415
Виробник: Microchip Technology
Description: DIODE GEN PURP 50V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Qualification: MIL-PRF-19500/411
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JAN1N5415US 11075-lds-0231-1-datasheet
Виробник: Microchip Technology
Description: DIODE GEN PURP 50V 3A AXIAL
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JAN1N5416 124360-lds-0231-datasheet
JAN1N5416
Виробник: Microchip Technology
Description: DIODE STANDARD 100V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: MIL-PRF-19500/411
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JAN1N5416US 11075-lds-0231-1-datasheet
JAN1N5416US
Виробник: Microchip Technology
Description: DIODE STANDARD 100V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: MIL-PRF-19500/411
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JAN1N5417 124360-lds-0231-datasheet
JAN1N5417
Виробник: Microchip Technology
Description: DIODE STANDARD 200V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: MIL-PRF-19500/411
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JAN1N5417US 11075-lds-0231-1-datasheet
JAN1N5417US
Виробник: Microchip Technology
Description: DIODE STANDARD 200V 3A B SQMELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: MIL-PRF-19500/411
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JAN1N5418 124360-lds-0231-datasheet
JAN1N5418
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: MIL-PRF-19500/411
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JAN1N5418US 11075-lds-0231-1-datasheet
JAN1N5418US
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 3A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: MIL-PRF-19500/411
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JAN1N5419 124360-lds-0231-datasheet
JAN1N5419
Виробник: Microchip Technology
Description: DIODE GEN PURP 500V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 500 V
Qualification: MIL-PRF-19500/411
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JAN1N5419US 11075-lds-0231-1-datasheet
JAN1N5419US
Виробник: Microchip Technology
Description: DIODE GEN PURP 500V 3A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 500 V
Qualification: MIL-PRF-19500/411
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JAN1N5420 124360-lds-0231-datasheet
JAN1N5420
Виробник: Microchip Technology
Description: DIODE GEN PURP 600V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: MIL-PRF-19500/411
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JAN1N5420US 11075-lds-0231-1-datasheet
JAN1N5420US
Виробник: Microchip Technology
Description: DIODE GEN PURP 600V 3A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: MIL-PRF-19500/411
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JAN1N5550 11519-lds-0230-datasheet
JAN1N5550
Виробник: Microchip Technology
Description: DIODE STANDARD 200V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: MIL-PRF-19500/420
на замовлення 175 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+401.67 грн
100+359.84 грн
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JAN1N5551 11519-lds-0230-datasheet
JAN1N5551
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: MIL-PRF-19500/420
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JAN1N5552 11519-lds-0230-datasheet
JAN1N5552
Виробник: Microchip Technology
Description: DIODE STANDARD 600V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: MIL-PRF-19500/420
на замовлення 124 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+343.72 грн
100+307.36 грн
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JAN1N5553 11519-lds-0230-datasheet
JAN1N5553
Виробник: Microchip Technology
Description: DIODE GEN PURP 800V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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JAN1N5554 11519-lds-0230-datasheet
JAN1N5554
Виробник: Microchip Technology
Description: DIODE GEN PURP 1KV 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Qualification: MIL-PRF-19500/420
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JAN1N5804 1N5802%2C1N5804%2C1N5806.pdf
JAN1N5804
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 2.5A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: MIL-PRF-19500/477
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JAN1N5804US 132687-lds-0211-1-datasheet
JAN1N5804US
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 2.5A D-5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: MIL-PRF-19500/477
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JAN1N5806
JAN1N5806
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 2.5A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/477
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JAN1N5811 123509-lds-0168-datasheet
JAN1N5811
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 6A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Grade: Military
Qualification: MIL-PRF-19500/477
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JAN1N5811US 124792-lds-0168-1-datasheet
JAN1N5811US
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 6A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Grade: Military
Qualification: MIL-PRF-19500/477
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JAN1N6118A lds-0277.pdf
JAN1N6118A
Виробник: Microchip Technology
Description: TVS DIODE 25.1VWM 45.7V AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 25.1V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500/516
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JAN1N6118AUS lds-0277-1.pdf
JAN1N6118AUS
Виробник: Microchip Technology
Description: TVS DIODE 25.1VWM 45.7VC SQMELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 25.1V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500/516
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JAN1N6126A 127891-lds-0277-datasheet
JAN1N6126A
Виробник: Microchip Technology
Description: TVS DIODE 51.7VWM 97.1VC AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.1A
Voltage - Reverse Standoff (Typ): 51.7V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 97.1V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
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JAN1N6126AUS 127892-lds-0277-1-datasheet
JAN1N6126AUS
Виробник: Microchip Technology
Description: TVS DIODE 51.7VWM 97.1VC SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.1A
Voltage - Reverse Standoff (Typ): 51.7V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 97.1V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
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JAN1N6156A 127853-1n6138-1n6173a-tvs-diode-series-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 29.7VWM 53.6VC C AXIAL
Packaging: Bulk
Package / Case: G, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 28A
Voltage - Reverse Standoff (Typ): 29.7V
Supplier Device Package: C, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
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