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CDLL982B CDLL982B Microchip Technology 5917-1n962bur-datasheet Description: DIODE ZENER 75V 500MW DO213AB
Current - Reverse Leakage @ Vr: 500 nA @ 56 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 270 Ohms
Voltage - Zener (Nom) (Vz): 75 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
товару немає в наявності
 Мінімальне замовлення: 323 шт
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CDLL990B CDLL990B Microchip Technology Description: DIODE ZENER 160V 500MW DO213AA
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Tolerance: ±5%
Packaging: Bulk
Power - Max: 500 mW
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 1700 Ohms
Voltage - Zener (Nom) (Vz): 160 V
товару немає в наявності
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CDLL991B CDLL991B Microchip Technology Description: DIODE ZENER 180V 500MW DO213AA
Power - Max: 500 mW
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 2200 Ohms
Voltage - Zener (Nom) (Vz): 180 V
Mounting Type: Surface Mount
Package / Case: DO-213AA
Tolerance: ±5%
Packaging: Bulk
товару немає в наявності
 Мінімальне замовлення: 100 шт
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CDLL992B CDLL992B Microchip Technology Description: DIODE ZENER 200V 500MW DO213AA
Power - Max: 500 mW
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 2500 Ohms
Voltage - Zener (Nom) (Vz): 200 V
Mounting Type: Surface Mount
Package / Case: DO-213AA
Tolerance: ±5%
Packaging: Bulk
товару немає в наявності
 Мінімальне замовлення: 100 шт
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JAN1N3957 JAN1N3957 Microchip Technology 123512-lds-0190-datasheet Description: DIODE GEN PURP 1KV 1A AXIAL
Qualification: MIL-PRF-19500/228
Current - Reverse Leakage @ Vr: 100 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
товару немає в наявності
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JAN1N4942 JAN1N4942 Microchip Technology 129281-lds-0295-datasheet Description: DIODE STANDARD 200V 1A AXIAL
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500/359
Grade: Military
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 Мінімальне замовлення: 158 шт
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JAN1N4944 JAN1N4944 Microchip Technology 129281-lds-0295-datasheet Description: DIODE GEN PURP 400V 1A AXIAL
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
товару немає в наявності
 Мінімальне замовлення: 125 шт
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JAN1N4960US JAN1N4960US Microchip Technology 11059-sd44a-datasheet Description: DIODE ZENER 12V 5W D5B
Qualification: MIL-PRF-19500/356
Current - Reverse Leakage @ Vr: 10 µA @ 9.1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Grade: Military
Supplier Device Package: D-5B
Impedance (Max) (Zzt): 2.5 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Tolerance: ±5%
Packaging: Bulk
товару немає в наявності
 Мінімальне замовлення: 100 шт
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JAN1N4980 JAN1N4980 Microchip Technology 10913-sa5-37-datasheet Description: DIODE ZENER 82V 5W AXIAL
Current - Reverse Leakage @ Vr: 2 µA @ 62.2 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Grade: Military
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 82 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: E, Axial
Tolerance: ±5%
Packaging: Bulk
Qualification: MIL-PRF-19500/356
товару немає в наявності
 Мінімальне замовлення: 108 шт
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JAN1N4980US JAN1N4980US Microchip Technology 11059-sd44a-datasheet Description: DIODE ZENER 82V 5W D5B
Qualification: MIL-PRF-19500/356
Current - Reverse Leakage @ Vr: 2 µA @ 62.2 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Grade: Military
Supplier Device Package: D-5B
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 82 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Tolerance: ±5%
Packaging: Bulk
товару немає в наявності
 Мінімальне замовлення: 100 шт
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JAN1N5415 JAN1N5415 Microchip Technology 124360-lds-0231-datasheet Description: DIODE GEN PURP 50V 3A AXIAL
Qualification: MIL-PRF-19500/411
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 50 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
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JAN1N5415US Microchip Technology 11075-lds-0231-1-datasheet Description: DIODE GEN PURP 50V 3A AXIAL
товару немає в наявності
 Мінімальне замовлення: 100 шт
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JAN1N5416 JAN1N5416 Microchip Technology LDS-0231%2C+1N5415+thru+1N5420%2C+MIL-PRF-19500-411.pdf Description: DIODE STANDARD 100V 3A B AXIAL
Qualification: MIL-PRF-19500/411
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
на замовлення 105 шт:
термін постачання 21-31 дні (днів)
1+418.41 грн
100+374.01 грн
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JAN1N5416US JAN1N5416US Microchip Technology LDS-0231-1%2C+1N5415US+thru1N5420US%2C+MIL-PRF-19500-411.pdf Description: DIODE STANDARD 100V 3A B AXIAL
Qualification: MIL-PRF-19500/411
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
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 Мінімальне замовлення: 100 шт
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JAN1N5417 JAN1N5417 Microchip Technology 124360-lds-0231-datasheet Description: DIODE STANDARD 200V 3A B AXIAL
Qualification: MIL-PRF-19500/411
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
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JAN1N5417US JAN1N5417US Microchip Technology 11075-lds-0231-1-datasheet Description: DIODE STANDARD 200V 3A B SQMELF
Qualification: MIL-PRF-19500/411
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, SQ-MELF
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Bulk
товару немає в наявності
 Мінімальне замовлення: 100 шт
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JAN1N5418 JAN1N5418 Microchip Technology 124360-lds-0231-datasheet Description: DIODE GEN PURP 400V 3A AXIAL
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500/411
Grade: Military
товару немає в наявності
 Мінімальне замовлення: 132 шт
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JAN1N5418US JAN1N5418US Microchip Technology 11075-lds-0231-1-datasheet Description: DIODE GEN PURP 400V 3A D-5B
Qualification: MIL-PRF-19500/411
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Current - Average Rectified (Io): 3A
Grade: Military
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 Мінімальне замовлення: 100 шт
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JAN1N5419 JAN1N5419 Microchip Technology LDS-0231%2C+1N5415+thru+1N5420%2C+MIL-PRF-19500-411.pdf Description: DIODE STANDARD 500V 3A B AXIAL
Qualification: MIL-PRF-19500/411
Current - Reverse Leakage @ Vr: 1 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 500 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
товару немає в наявності
 Мінімальне замовлення: 100 шт
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JAN1N5419US JAN1N5419US Microchip Technology LDS-0231-1%2C+1N5415US+thru1N5420US%2C+MIL-PRF-19500-411.pdf Description: DIODE STANDARD 500V 3A D5B
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Packaging: Bulk
Qualification: MIL-PRF-19500/411
Current - Reverse Leakage @ Vr: 1 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 500 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 250 ns
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 Мінімальне замовлення: 100 шт
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JAN1N5420 JAN1N5420 Microchip Technology 124360-lds-0231-datasheet Description: DIODE GEN PURP 600V 3A B AXIAL
Technology: Standard
Reverse Recovery Time (trr): 400 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500/411
Grade: Military
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
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 Мінімальне замовлення: 100 шт
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JAN1N5420US JAN1N5420US Microchip Technology 11075-lds-0231-1-datasheet Description: DIODE GEN PURP 600V 3A D-5B
Qualification: MIL-PRF-19500/411
Grade: Military
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 400 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Packaging: Bulk
товару немає в наявності
 Мінімальне замовлення: 100 шт
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JAN1N5550 JAN1N5550 Microchip Technology LDS-0230%2C+1N5550+thru+1N5554%2C+MIL-PRF-19500-420.pdf Description: DIODE STANDARD 200V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: MIL-PRF-19500/420
на замовлення 415 шт:
термін постачання 21-31 дні (днів)
1+389.47 грн
100+348.53 грн
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JAN1N5551 JAN1N5551 Microchip Technology LDS-0230%2C+1N5550+thru+1N5554%2C+MIL-PRF-19500-420.pdf Description: DIODE STANDARD 400V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Grade: Military
Qualification: MIL-PRF-19500/420
на замовлення 117 шт:
термін постачання 21-31 дні (днів)
1+382.43 грн
100+342.21 грн
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JAN1N5552 JAN1N5552 Microchip Technology LDS-0230%2C+1N5550+thru+1N5554%2C+MIL-PRF-19500-420.pdf Description: DIODE STANDARD 600V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Grade: Military
Qualification: MIL-PRF-19500/420
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JAN1N5553 JAN1N5553 Microchip Technology 11519-lds-0230-datasheet Description: DIODE GEN PURP 800V 3A AXIAL
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
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JAN1N5554 JAN1N5554 Microchip Technology 11519-lds-0230-datasheet Description: DIODE GEN PURP 1KV 3A AXIAL
Qualification: MIL-PRF-19500/420
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
товару немає в наявності
 Мінімальне замовлення: 104 шт
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JAN1N5804 JAN1N5804 Microchip Technology 1N5802%2C1N5804%2C1N5806.pdf Description: DIODE STANDARD 100V 2.5AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: MIL-PRF-19500/477
товару немає в наявності
 Мінімальне замовлення: 123 шт
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JAN1N5804US JAN1N5804US Microchip Technology LDS-0211+%282%29%2C+1N5802-1N5804-1N5806%2C+MIL-PRF-19500-477.pdf Description: DIODE STANDARD 100V 2.5A D5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: MIL-PRF-19500/477
товару немає в наявності
 Мінімальне замовлення: 100 шт
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JAN1N5806 JAN1N5806 Microchip Technology Description: DIODE GEN PURP 150V 2.5A AXIAL
Qualification: MIL-PRF-19500/477
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 2.5A
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
товару немає в наявності
 Мінімальне замовлення: 159 шт
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JAN1N5811 JAN1N5811 Microchip Technology LDS-0168-1%2C+1N5807US-1N5809US-1N5811US%28URS%29%2C+MIL-PRF-19500-477.pdf Description: DIODE STANDARD 150V 3A B AXIAL
Qualification: MIL-PRF-19500/477
Grade: Military
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 6A
на замовлення 170 шт:
термін постачання 21-31 дні (днів)
1+418.41 грн
100+374.21 грн
В кошику  од. на суму  грн.
JAN1N5811US JAN1N5811US Microchip Technology 124792-lds-0168-1-datasheet Description: DIODE GEN PURP 150V 6A B SQ-MELF
Qualification: MIL-PRF-19500/477
Grade: Military
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, SQ-MELF
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Bulk
товару немає в наявності
 Мінімальне замовлення: 100 шт
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JAN1N6118A JAN1N6118A Microchip Technology lds-0277.pdf Description: TVS DIODE 25.1VWM 45.7V AXIAL
Qualification: MIL-PRF-19500/516
Grade: Military
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 45.7V
Voltage - Breakdown (Min): 31.4V
Bidirectional Channels: 1
Supplier Device Package: B, Axial
Voltage - Reverse Standoff (Typ): 25.1V
Current - Peak Pulse (10/1000µs): 10.9A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
товару немає в наявності
 Мінімальне замовлення: 100 шт
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JAN1N6118AUS JAN1N6118AUS Microchip Technology lds-0277-1.pdf Description: TVS DIODE 25.1VWM 45.7VC SQMELF
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 45.7V
Voltage - Breakdown (Min): 31.4V
Bidirectional Channels: 1
Supplier Device Package: B, SQ-MELF
Voltage - Reverse Standoff (Typ): 25.1V
Current - Peak Pulse (10/1000µs): 10.9A
Qualification: MIL-PRF-19500/516
Grade: Military
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Bulk
товару немає в наявності
 Мінімальне замовлення: 100 шт
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JAN1N6126A JAN1N6126A Microchip Technology lds-0277.pdf Description: TVS DIODE 51.7VWM 97.1V AXIAL
Bidirectional Channels: 1
Supplier Device Package: B, Axial
Voltage - Reverse Standoff (Typ): 51.7V
Current - Peak Pulse (10/1000µs): 5.1A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500/516
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 97.1V
Voltage - Breakdown (Min): 64.6V
товару немає в наявності
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JAN1N6126AUS JAN1N6126AUS Microchip Technology lds-0277-1.pdf Description: TVS DIODE 51.7VWM 97.1VC SQMELF
Qualification: MIL-PRF-19500/516
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 97.1V
Voltage - Breakdown (Min): 64.6V
Bidirectional Channels: 1
Supplier Device Package: B, SQ-MELF
Voltage - Reverse Standoff (Typ): 51.7V
Current - Peak Pulse (10/1000µs): 5.1A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Bulk
товару немає в наявності
 Мінімальне замовлення: 100 шт
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JAN1N6156A Microchip Technology 127853-1n6138-1n6173a-tvs-diode-series-datasheet Description: TVS DIODE 29.7VWM 53.6VC C AXIAL
Qualification: MIL-PRF-19500/516
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 53.6V
Voltage - Breakdown (Min): 37.1V
Bidirectional Channels: 1
Supplier Device Package: C, Axial
Voltage - Reverse Standoff (Typ): 29.7V
Current - Peak Pulse (10/1000µs): 28A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: G, Axial
Packaging: Bulk
товару немає в наявності
 Мінімальне замовлення: 100 шт
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JAN1N829-1 JAN1N829-1 Microchip Technology 125462-lds-0220-datasheet Description: DIODE ZENER 6.2V 500MW DO35
Qualification: MIL-PRF-19500/159
Grade: Military
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
товару немає в наявності
 Мінімальне замовлення: 100 шт
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JAN1N829UR-1 Microchip Technology 11037-lds-0220-1-datasheet Description: DIODE ZENER 6.2V 500MW DO213AA
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 15 Ohms
Mounting Type: Surface Mount
Package / Case: DO-213AA
Tolerance: ±5%
Packaging: Bulk
Qualification: MIL-PRF-19500/159
Grade: Military
Voltage - Zener (Nom) (Vz): 6.2 V
товару немає в наявності
 Мінімальне замовлення: 100 шт
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JAN2N2219 JAN2N2219 Microchip Technology 2N2218-2N2219AL-LDS0091-MIL-PRF-19500-251.pdf Description: TRANS NPN 30V 0.8A TO-39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/251
товару немає в наявності
 Мінімальне замовлення: 100 шт
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JAN2N2219A JAN2N2219A Microchip Technology 2N2218-2N2219AL-LDS0091-MIL-PRF-19500-251.pdf Description: TRANS NPN 50V 0.8A TO-39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/251
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JAN2N2219AL JAN2N2219AL Microchip Technology 2N2218-2N2219AL-LDS0091-MIL-PRF-19500-251.pdf Description: TRANS NPN 50V 0.8A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/251
товару немає в наявності
 Мінімальне замовлення: 100 шт
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JAN2N2222A JAN2N2222A Microchip Technology 2N2221A%2C%202N2222A.pdf Description: TRANS NPN 50V 0.8A TO-218
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-218
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/255
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JAN2N2222AL JAN2N2222AL Microchip Technology 2N2221A%2C%202N2222A.pdf Description: TRANS NPN 50V 0.8A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/255
товару немає в наявності
 Мінімальне замовлення: 100 шт
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JAN2N2222AUB JAN2N2222AUB Microchip Technology 2N2221A%2C%202N2222A.pdf Description: TRANS NPN 50V 0.8A UB
Packaging: Bulk
Package / Case: 3-SMD, Non-Standard
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/255
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JAN2N2369A JAN2N2369A Microchip Technology 2N2369A-2N4449-MIL-PRF-19500-317.pdf Description: TRANS NPN 15V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: TO-18
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/317
на замовлення 154 шт:
термін постачання 21-31 дні (днів)
2+273.72 грн
100+244.50 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
Jan2N2369AUB Jan2N2369AUB Microchip Technology 2N2369A-2N4449-MIL-PRF-19500-317.pdf Description: TRANS NPN 20V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: UB
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/317
товару немає в наявності
 Мінімальне замовлення: 100 шт
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JAN2N2484 JAN2N2484 Microchip Technology 2N2484+MIL-PRF-19500_376.pdf Description: TRANS NPN 60V 0.05A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 2nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 10mA, 5V
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/376
товару немає в наявності
 Мінімальне замовлення: 100 шт
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Jan2N2484UB Jan2N2484UB Microchip Technology 2N2484+MIL-PRF-19500_376.pdf Description: TRANS NPN 60V 0.05A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 2nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 10mA, 5V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/376
товару немає в наявності
 Мінімальне замовлення: 100 шт
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JAN2N2905A JAN2N2905A Microchip Technology 2N2904-2N2905-MIL-PRF-19500-290.pdf Description: TRANS PNP 60V 0.6A TO-39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/290
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+724.20 грн
В кошику  од. на суму  грн.
JAN2N2905AL JAN2N2905AL Microchip Technology LDS-0186_2N2904-05%28AL%29.pdf Description: TRANS PNP 60V 0.6A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/290
товару немає в наявності
 Мінімальне замовлення: 100 шт
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JAN2N2906A JAN2N2906A Microchip Technology MIL-PRF-19500_291Y_wAmendment1_7-10-19.pdf Description: TRANS PNP 60V 0.6A TO-18
Grade: Military
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Active
Supplier Device Package: TO-18
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Qualification: MIL-PRF-19500/291
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
товару немає в наявності
 Мінімальне замовлення: 193 шт
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JAN2N2906AUB JAN2N2906AUB Microchip Technology MIL-PRF-19500_291Y_wAmendment1_7-10-19.pdf Description: TRANS PNP 60V 0.6A UB
Qualification: MIL-PRF-19500/291
Grade: Military
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 600 mA
товару немає в наявності
 Мінімальне замовлення: 100 шт
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JAN2N2907A JAN2N2907A Microchip Technology MIL-PRF-19500_291Y_wAmendment1_7-10-19.pdf Description: TRANS PNP 60V 0.6A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
на замовлення 473 шт:
термін постачання 21-31 дні (днів)
2+186.13 грн
100+166.35 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
JAN2N2907AL Microchip Technology MIL-PRF-19500_291Y_wAmendment1_7-10-19.pdf Description: TRANS PNP 60V 0.6A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
товару немає в наявності
 Мінімальне замовлення: 193 шт
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Jan2N2907AUA Microchip Technology MIL-PRF-19500_291Y_wAmendment1_7-10-19.pdf Description: TRANS PNP 60V 0.6A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
товару немає в наявності
 Мінімальне замовлення: 100 шт
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JAN2N2946A JAN2N2946A Microchip Technology 124373-lds-0236-datasheet Description: TRANS PNP 35V 0.1A TO46
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-206AB, TO-46-3 Metal Can
Packaging: Bulk
Qualification: MIL-PRF-19500/382
Grade: Military
Power - Max: 400 mW
Voltage - Collector Emitter Breakdown (Max): 35 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Discontinued at Digi-Key
Supplier Device Package: TO-46
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1mA, 500mV
Current - Collector Cutoff (Max): 10µA (ICBO)
Operating Temperature: -65°C ~ 200°C (TJ)
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JAN2N3019 JAN2N3019 Microchip Technology 122693-lds-0185-datasheet Description: TRANS NPN 80V 1A TO-39
Qualification: MIL-PRF-19500/391
Grade: Military
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-39
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
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JAN2N3019S Microchip Technology Description: TRANS NPN 80V 1A TO-39
Qualification: MIL-PRF-19500/391
Grade: Military
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-39
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
на замовлення 88 шт:
термін постачання 21-31 дні (днів)
1+1114.45 грн
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JAN2N3439 JAN2N3439 Microchip Technology 8830-lds-0022-datasheet Description: TRANS NPN 350V 1A TO39
Qualification: MIL-PRF-19500/368
Grade: Military
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-39 (TO-205AD)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 2µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
товару немає в наявності
 Мінімальне замовлення: 100 шт
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CDLL982B 5917-1n962bur-datasheet
CDLL982B
Виробник: Microchip Technology
Description: DIODE ZENER 75V 500MW DO213AB
Current - Reverse Leakage @ Vr: 500 nA @ 56 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 270 Ohms
Voltage - Zener (Nom) (Vz): 75 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 323 шт
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CDLL990B
CDLL990B
Виробник: Microchip Technology
Description: DIODE ZENER 160V 500MW DO213AA
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Tolerance: ±5%
Packaging: Bulk
Power - Max: 500 mW
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 1700 Ohms
Voltage - Zener (Nom) (Vz): 160 V
товару немає в наявності
Мінімальне замовлення: 117 шт
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CDLL991B
CDLL991B
Виробник: Microchip Technology
Description: DIODE ZENER 180V 500MW DO213AA
Power - Max: 500 mW
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 2200 Ohms
Voltage - Zener (Nom) (Vz): 180 V
Mounting Type: Surface Mount
Package / Case: DO-213AA
Tolerance: ±5%
Packaging: Bulk
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Мінімальне замовлення: 100 шт
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CDLL992B
CDLL992B
Виробник: Microchip Technology
Description: DIODE ZENER 200V 500MW DO213AA
Power - Max: 500 mW
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 2500 Ohms
Voltage - Zener (Nom) (Vz): 200 V
Mounting Type: Surface Mount
Package / Case: DO-213AA
Tolerance: ±5%
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 100 шт
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JAN1N3957 123512-lds-0190-datasheet
JAN1N3957
Виробник: Microchip Technology
Description: DIODE GEN PURP 1KV 1A AXIAL
Qualification: MIL-PRF-19500/228
Current - Reverse Leakage @ Vr: 100 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 125 шт
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JAN1N4942 129281-lds-0295-datasheet
JAN1N4942
Виробник: Microchip Technology
Description: DIODE STANDARD 200V 1A AXIAL
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500/359
Grade: Military
товару немає в наявності
Мінімальне замовлення: 158 шт
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JAN1N4944 129281-lds-0295-datasheet
JAN1N4944
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 1A AXIAL
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 125 шт
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JAN1N4960US 11059-sd44a-datasheet
JAN1N4960US
Виробник: Microchip Technology
Description: DIODE ZENER 12V 5W D5B
Qualification: MIL-PRF-19500/356
Current - Reverse Leakage @ Vr: 10 µA @ 9.1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Grade: Military
Supplier Device Package: D-5B
Impedance (Max) (Zzt): 2.5 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Tolerance: ±5%
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 100 шт
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JAN1N4980 10913-sa5-37-datasheet
JAN1N4980
Виробник: Microchip Technology
Description: DIODE ZENER 82V 5W AXIAL
Current - Reverse Leakage @ Vr: 2 µA @ 62.2 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Grade: Military
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 82 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: E, Axial
Tolerance: ±5%
Packaging: Bulk
Qualification: MIL-PRF-19500/356
товару немає в наявності
Мінімальне замовлення: 108 шт
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JAN1N4980US 11059-sd44a-datasheet
JAN1N4980US
Виробник: Microchip Technology
Description: DIODE ZENER 82V 5W D5B
Qualification: MIL-PRF-19500/356
Current - Reverse Leakage @ Vr: 2 µA @ 62.2 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Grade: Military
Supplier Device Package: D-5B
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 82 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Tolerance: ±5%
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 100 шт
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JAN1N5415 124360-lds-0231-datasheet
JAN1N5415
Виробник: Microchip Technology
Description: DIODE GEN PURP 50V 3A AXIAL
Qualification: MIL-PRF-19500/411
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 50 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 118 шт
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JAN1N5415US 11075-lds-0231-1-datasheet
Виробник: Microchip Technology
Description: DIODE GEN PURP 50V 3A AXIAL
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Мінімальне замовлення: 100 шт
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JAN1N5416 LDS-0231%2C+1N5415+thru+1N5420%2C+MIL-PRF-19500-411.pdf
JAN1N5416
Виробник: Microchip Technology
Description: DIODE STANDARD 100V 3A B AXIAL
Qualification: MIL-PRF-19500/411
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
на замовлення 105 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+418.41 грн
100+374.01 грн
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JAN1N5416US LDS-0231-1%2C+1N5415US+thru1N5420US%2C+MIL-PRF-19500-411.pdf
JAN1N5416US
Виробник: Microchip Technology
Description: DIODE STANDARD 100V 3A B AXIAL
Qualification: MIL-PRF-19500/411
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
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Мінімальне замовлення: 100 шт
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JAN1N5417 124360-lds-0231-datasheet
JAN1N5417
Виробник: Microchip Technology
Description: DIODE STANDARD 200V 3A B AXIAL
Qualification: MIL-PRF-19500/411
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
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JAN1N5417US 11075-lds-0231-1-datasheet
JAN1N5417US
Виробник: Microchip Technology
Description: DIODE STANDARD 200V 3A B SQMELF
Qualification: MIL-PRF-19500/411
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, SQ-MELF
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 100 шт
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JAN1N5418 124360-lds-0231-datasheet
JAN1N5418
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 3A AXIAL
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500/411
Grade: Military
товару немає в наявності
Мінімальне замовлення: 132 шт
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JAN1N5418US 11075-lds-0231-1-datasheet
JAN1N5418US
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 3A D-5B
Qualification: MIL-PRF-19500/411
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Current - Average Rectified (Io): 3A
Grade: Military
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Мінімальне замовлення: 100 шт
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JAN1N5419 LDS-0231%2C+1N5415+thru+1N5420%2C+MIL-PRF-19500-411.pdf
JAN1N5419
Виробник: Microchip Technology
Description: DIODE STANDARD 500V 3A B AXIAL
Qualification: MIL-PRF-19500/411
Current - Reverse Leakage @ Vr: 1 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 500 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 100 шт
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JAN1N5419US LDS-0231-1%2C+1N5415US+thru1N5420US%2C+MIL-PRF-19500-411.pdf
JAN1N5419US
Виробник: Microchip Technology
Description: DIODE STANDARD 500V 3A D5B
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Packaging: Bulk
Qualification: MIL-PRF-19500/411
Current - Reverse Leakage @ Vr: 1 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 500 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 250 ns
товару немає в наявності
Мінімальне замовлення: 100 шт
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JAN1N5420 124360-lds-0231-datasheet
JAN1N5420
Виробник: Microchip Technology
Description: DIODE GEN PURP 600V 3A B AXIAL
Technology: Standard
Reverse Recovery Time (trr): 400 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500/411
Grade: Military
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
товару немає в наявності
Мінімальне замовлення: 100 шт
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JAN1N5420US 11075-lds-0231-1-datasheet
JAN1N5420US
Виробник: Microchip Technology
Description: DIODE GEN PURP 600V 3A D-5B
Qualification: MIL-PRF-19500/411
Grade: Military
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 400 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JAN1N5550 LDS-0230%2C+1N5550+thru+1N5554%2C+MIL-PRF-19500-420.pdf
JAN1N5550
Виробник: Microchip Technology
Description: DIODE STANDARD 200V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: MIL-PRF-19500/420
на замовлення 415 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+389.47 грн
100+348.53 грн
В кошику  од. на суму  грн.
JAN1N5551 LDS-0230%2C+1N5550+thru+1N5554%2C+MIL-PRF-19500-420.pdf
JAN1N5551
Виробник: Microchip Technology
Description: DIODE STANDARD 400V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Grade: Military
Qualification: MIL-PRF-19500/420
на замовлення 117 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+382.43 грн
100+342.21 грн
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JAN1N5552 LDS-0230%2C+1N5550+thru+1N5554%2C+MIL-PRF-19500-420.pdf
JAN1N5552
Виробник: Microchip Technology
Description: DIODE STANDARD 600V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Grade: Military
Qualification: MIL-PRF-19500/420
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JAN1N5553 11519-lds-0230-datasheet
JAN1N5553
Виробник: Microchip Technology
Description: DIODE GEN PURP 800V 3A AXIAL
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 104 шт
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JAN1N5554 11519-lds-0230-datasheet
JAN1N5554
Виробник: Microchip Technology
Description: DIODE GEN PURP 1KV 3A AXIAL
Qualification: MIL-PRF-19500/420
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 104 шт
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JAN1N5804 1N5802%2C1N5804%2C1N5806.pdf
JAN1N5804
Виробник: Microchip Technology
Description: DIODE STANDARD 100V 2.5AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: MIL-PRF-19500/477
товару немає в наявності
Мінімальне замовлення: 123 шт
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JAN1N5804US LDS-0211+%282%29%2C+1N5802-1N5804-1N5806%2C+MIL-PRF-19500-477.pdf
JAN1N5804US
Виробник: Microchip Technology
Description: DIODE STANDARD 100V 2.5A D5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: MIL-PRF-19500/477
товару немає в наявності
Мінімальне замовлення: 100 шт
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JAN1N5806
JAN1N5806
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 2.5A AXIAL
Qualification: MIL-PRF-19500/477
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 2.5A
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 159 шт
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JAN1N5811 LDS-0168-1%2C+1N5807US-1N5809US-1N5811US%28URS%29%2C+MIL-PRF-19500-477.pdf
JAN1N5811
Виробник: Microchip Technology
Description: DIODE STANDARD 150V 3A B AXIAL
Qualification: MIL-PRF-19500/477
Grade: Military
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 6A
на замовлення 170 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+418.41 грн
100+374.21 грн
В кошику  од. на суму  грн.
JAN1N5811US 124792-lds-0168-1-datasheet
JAN1N5811US
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 6A B SQ-MELF
Qualification: MIL-PRF-19500/477
Grade: Military
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, SQ-MELF
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 100 шт
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JAN1N6118A lds-0277.pdf
JAN1N6118A
Виробник: Microchip Technology
Description: TVS DIODE 25.1VWM 45.7V AXIAL
Qualification: MIL-PRF-19500/516
Grade: Military
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 45.7V
Voltage - Breakdown (Min): 31.4V
Bidirectional Channels: 1
Supplier Device Package: B, Axial
Voltage - Reverse Standoff (Typ): 25.1V
Current - Peak Pulse (10/1000µs): 10.9A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 100 шт
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JAN1N6118AUS lds-0277-1.pdf
JAN1N6118AUS
Виробник: Microchip Technology
Description: TVS DIODE 25.1VWM 45.7VC SQMELF
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 45.7V
Voltage - Breakdown (Min): 31.4V
Bidirectional Channels: 1
Supplier Device Package: B, SQ-MELF
Voltage - Reverse Standoff (Typ): 25.1V
Current - Peak Pulse (10/1000µs): 10.9A
Qualification: MIL-PRF-19500/516
Grade: Military
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 100 шт
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JAN1N6126A lds-0277.pdf
JAN1N6126A
Виробник: Microchip Technology
Description: TVS DIODE 51.7VWM 97.1V AXIAL
Bidirectional Channels: 1
Supplier Device Package: B, Axial
Voltage - Reverse Standoff (Typ): 51.7V
Current - Peak Pulse (10/1000µs): 5.1A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500/516
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 97.1V
Voltage - Breakdown (Min): 64.6V
товару немає в наявності
Мінімальне замовлення: 100 шт
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JAN1N6126AUS lds-0277-1.pdf
JAN1N6126AUS
Виробник: Microchip Technology
Description: TVS DIODE 51.7VWM 97.1VC SQMELF
Qualification: MIL-PRF-19500/516
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 97.1V
Voltage - Breakdown (Min): 64.6V
Bidirectional Channels: 1
Supplier Device Package: B, SQ-MELF
Voltage - Reverse Standoff (Typ): 51.7V
Current - Peak Pulse (10/1000µs): 5.1A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 100 шт
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JAN1N6156A 127853-1n6138-1n6173a-tvs-diode-series-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 29.7VWM 53.6VC C AXIAL
Qualification: MIL-PRF-19500/516
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 53.6V
Voltage - Breakdown (Min): 37.1V
Bidirectional Channels: 1
Supplier Device Package: C, Axial
Voltage - Reverse Standoff (Typ): 29.7V
Current - Peak Pulse (10/1000µs): 28A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: G, Axial
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JAN1N829-1 125462-lds-0220-datasheet
JAN1N829-1
Виробник: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO35
Qualification: MIL-PRF-19500/159
Grade: Military
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 100 шт
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JAN1N829UR-1 11037-lds-0220-1-datasheet
Виробник: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO213AA
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 15 Ohms
Mounting Type: Surface Mount
Package / Case: DO-213AA
Tolerance: ±5%
Packaging: Bulk
Qualification: MIL-PRF-19500/159
Grade: Military
Voltage - Zener (Nom) (Vz): 6.2 V
товару немає в наявності
Мінімальне замовлення: 100 шт
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JAN2N2219 2N2218-2N2219AL-LDS0091-MIL-PRF-19500-251.pdf
JAN2N2219
Виробник: Microchip Technology
Description: TRANS NPN 30V 0.8A TO-39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/251
товару немає в наявності
Мінімальне замовлення: 100 шт
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JAN2N2219A 2N2218-2N2219AL-LDS0091-MIL-PRF-19500-251.pdf
JAN2N2219A
Виробник: Microchip Technology
Description: TRANS NPN 50V 0.8A TO-39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/251
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JAN2N2219AL 2N2218-2N2219AL-LDS0091-MIL-PRF-19500-251.pdf
JAN2N2219AL
Виробник: Microchip Technology
Description: TRANS NPN 50V 0.8A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/251
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JAN2N2222A 2N2221A%2C%202N2222A.pdf
JAN2N2222A
Виробник: Microchip Technology
Description: TRANS NPN 50V 0.8A TO-218
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-218
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/255
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JAN2N2222AL 2N2221A%2C%202N2222A.pdf
JAN2N2222AL
Виробник: Microchip Technology
Description: TRANS NPN 50V 0.8A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/255
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JAN2N2222AUB 2N2221A%2C%202N2222A.pdf
JAN2N2222AUB
Виробник: Microchip Technology
Description: TRANS NPN 50V 0.8A UB
Packaging: Bulk
Package / Case: 3-SMD, Non-Standard
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/255
товару немає в наявності
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JAN2N2369A 2N2369A-2N4449-MIL-PRF-19500-317.pdf
JAN2N2369A
Виробник: Microchip Technology
Description: TRANS NPN 15V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: TO-18
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/317
на замовлення 154 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+273.72 грн
100+244.50 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
Jan2N2369AUB 2N2369A-2N4449-MIL-PRF-19500-317.pdf
Jan2N2369AUB
Виробник: Microchip Technology
Description: TRANS NPN 20V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: UB
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/317
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JAN2N2484 2N2484+MIL-PRF-19500_376.pdf
JAN2N2484
Виробник: Microchip Technology
Description: TRANS NPN 60V 0.05A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 2nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 10mA, 5V
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/376
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
Jan2N2484UB 2N2484+MIL-PRF-19500_376.pdf
Jan2N2484UB
Виробник: Microchip Technology
Description: TRANS NPN 60V 0.05A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 2nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 10mA, 5V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/376
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JAN2N2905A 2N2904-2N2905-MIL-PRF-19500-290.pdf
JAN2N2905A
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A TO-39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/290
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+724.20 грн
В кошику  од. на суму  грн.
JAN2N2905AL LDS-0186_2N2904-05%28AL%29.pdf
JAN2N2905AL
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/290
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JAN2N2906A MIL-PRF-19500_291Y_wAmendment1_7-10-19.pdf
JAN2N2906A
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A TO-18
Grade: Military
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Active
Supplier Device Package: TO-18
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Qualification: MIL-PRF-19500/291
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
товару немає в наявності
Мінімальне замовлення: 193 шт
В кошику  од. на суму  грн.
JAN2N2906AUB MIL-PRF-19500_291Y_wAmendment1_7-10-19.pdf
JAN2N2906AUB
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A UB
Qualification: MIL-PRF-19500/291
Grade: Military
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 600 mA
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JAN2N2907A MIL-PRF-19500_291Y_wAmendment1_7-10-19.pdf
JAN2N2907A
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
на замовлення 473 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+186.13 грн
100+166.35 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
JAN2N2907AL MIL-PRF-19500_291Y_wAmendment1_7-10-19.pdf
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
товару немає в наявності
Мінімальне замовлення: 193 шт
В кошику  од. на суму  грн.
Jan2N2907AUA MIL-PRF-19500_291Y_wAmendment1_7-10-19.pdf
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JAN2N2946A 124373-lds-0236-datasheet
JAN2N2946A
Виробник: Microchip Technology
Description: TRANS PNP 35V 0.1A TO46
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-206AB, TO-46-3 Metal Can
Packaging: Bulk
Qualification: MIL-PRF-19500/382
Grade: Military
Power - Max: 400 mW
Voltage - Collector Emitter Breakdown (Max): 35 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Discontinued at Digi-Key
Supplier Device Package: TO-46
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1mA, 500mV
Current - Collector Cutoff (Max): 10µA (ICBO)
Operating Temperature: -65°C ~ 200°C (TJ)
товару немає в наявності
В кошику  од. на суму  грн.
JAN2N3019 122693-lds-0185-datasheet
JAN2N3019
Виробник: Microchip Technology
Description: TRANS NPN 80V 1A TO-39
Qualification: MIL-PRF-19500/391
Grade: Military
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-39
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
товару немає в наявності
В кошику  од. на суму  грн.
JAN2N3019S
Виробник: Microchip Technology
Description: TRANS NPN 80V 1A TO-39
Qualification: MIL-PRF-19500/391
Grade: Military
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-39
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
на замовлення 88 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1114.45 грн
В кошику  од. на суму  грн.
JAN2N3439 8830-lds-0022-datasheet
JAN2N3439
Виробник: Microchip Technology
Description: TRANS NPN 350V 1A TO39
Qualification: MIL-PRF-19500/368
Grade: Military
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-39 (TO-205AD)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 2µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
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