Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (278064) > Сторінка 819 з 4635

Обрати Сторінку:   [  << Попередня Сторінка ]  1 463 814 815 816 817 818 819 820 821 822 823 824 926 1389 1852 2315 2778 3241 3704 4167 4630 4635  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність Ціна без ПДВ
JAN2N3439L JAN2N3439L Microchip Technology 124290-lds-0022-1-datasheet Description: TRANS NPN 350V 1A TO5
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 1 A
Part Status: Discontinued at Digi-Key
Supplier Device Package: TO-5
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 2µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Qualification: MIL-PRF-19500/368
Grade: Military
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
товару немає в наявності
 Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JAN2N3440 JAN2N3440 Microchip Technology LDS-0022_2N3439-40.pdf Description: TRANS NPN 250V 1A TO-39
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 1 A
Part Status: Discontinued at Digi-Key
Supplier Device Package: TO-39
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 2µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
Qualification: MIL-PRF-19500/368
Grade: Military
товару немає в наявності
 Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JAN2N3440L JAN2N3440L Microchip Technology 2N3439L-2N3440L-LDS-0022-1-MIL-PRF-19500-368.pdf Description: TRANS NPN 250V 1A TO-5
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-5
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 2µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Qualification: MIL-PRF-19500/368
Grade: Military
товару немає в наявності
 Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JAN2N3501 JAN2N3501 Microchip Technology 125197-lds-0276-datasheet Description: TRANS NPN 150V 0.3A TO39
Qualification: MIL-PRF-19500/366
Grade: Military
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 300 mA
Part Status: Active
Supplier Device Package: TO-39 (TO-205AD)
на замовлення 37 шт:
термін постачання 21-31 дні (днів)
1+1004.18 грн
В кошику  од. на суму  грн.
JAN2N3501L JAN2N3501L Microchip Technology 125198-lds-0276-1-datasheet Description: TRANS NPN 150V 0.3A TO-5
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 300 mA
Supplier Device Package: TO-5
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Qualification: MIL-PRF-19500/366
Grade: Military
товару немає в наявності
 Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JAN2N3501UB JAN2N3501UB Microchip Technology 125200-lds-0276-3-datasheet Description: TRANS NPN 150V 0.3A UB
Qualification: MIL-PRF-19500/366
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 300 mA
Grade: Military
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Bulk
товару немає в наявності
 Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JAN2N3700 JAN2N3700 Microchip Technology LDS-0185_2N3700.pdf Description: TRANS NPN 80V 1A TO-18
Qualification: MIL-PRF-19500/391
Grade: Military
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-18
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Current - Collector Cutoff (Max): 10nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
на замовлення 75 шт:
термін постачання 21-31 дні (днів)
2+278.42 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
JAN2N3700UB JAN2N3700UB Microchip Technology 2N3700UB-LDS-0185-3-MIL-PRF-19500-391.pdf Description: TRANS NPN 80V 1A UB
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Current - Collector Cutoff (Max): 10nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Bulk
Qualification: MIL-PRF-19500/391
Grade: Military
товару немає в наявності
 Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JAN2N3735 JAN2N3735 Microchip Technology 8978-lds-0173-datasheet Description: TRANS NPN 40V 1.5A TO-39
Qualification: MIL-PRF-19500/395
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1.5 A
Grade: Military
Supplier Device Package: TO-39
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
товару немає в наявності
 Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JAN2N3735L JAN2N3735L Microchip Technology 8978-lds-0173-datasheet Description: TRANS NPN 40V 1.5A TO-5
Qualification: MIL-PRF-19500/395
Grade: Military
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1.5 A
Part Status: Active
Supplier Device Package: TO-5
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
товару немає в наявності
 Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JAN2N3737UB JAN2N3737UB Microchip Technology 8978-lds-0173-datasheet Description: TRANS NPN 40V 1.5A UB
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1.5 A
Part Status: Active
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Bulk
Qualification: MIL-PRF-19500/395
Grade: Military
товару немає в наявності
 Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
Jan2N3810L Microchip Technology 8931-lds-0118-datasheet Description: TRANS 2PNP 60V 50MA TO-78-6
Qualification: MIL-PRF-19500/336
Grade: Military
Supplier Device Package: TO-78-6
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 50mA
Power - Max: 350mW
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Packaging: Bulk
товару немає в наявності
 Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JAN2N4033 JAN2N4033 Microchip Technology 6070-2n4029-datasheet Description: TRANS PNP 80V 1A TO39
Power - Max: 800 mW
Qualification: MIL-PRF-19500/512
Grade: Military
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-39 (TO-205AD)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
товару немає в наявності
 Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JAN2N5582 JAN2N5582 Microchip Technology 6091-2n5581-datasheet Description: TRANS NPN 50V 0.8A TO46-3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Supplier Device Package: TO-46-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Qualification: MIL-PRF-19500/423
Grade: Military
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AB, TO-46-3 Metal Can
Packaging: Bulk
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -55°C ~ 200°C (TJ)
товару немає в наявності
 Мінімальне замовлення: 105 шт
В кошику  од. на суму  грн.
JAN2N918UB Microchip Technology Description: TRANS NPN 15V 0.05A
Packaging: Bulk
Package / Case: 3-SMD, Non-Standard
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
Grade: Military
Qualification: MIL-PRF-19500/301
товару немає в наявності
 Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JANTX1N3613 JANTX1N3613 Microchip Technology 1N3611-13%2C1N3614%2C1N3957.pdf Description: DIODE STANDARD 600V 1A AXIAL
Qualification: MIL-PRF-19500/228
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
на замовлення 145 шт:
термін постачання 21-31 дні (днів)
1+349.58 грн
100+312.22 грн
В кошику  од. на суму  грн.
JANTX1N3957 JANTX1N3957 Microchip Technology 123512-lds-0190-datasheet Description: DIODE GEN PURP 1KV 1A
Qualification: MIL-PRF-19500/228
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
товару немає в наявності
 Мінімальне замовлення: 120 шт
В кошику  од. на суму  грн.
JANTX1N4248 JANTX1N4248 Microchip Technology 123513-lds-0191-datasheet Description: DIODE GEN PURP 800V 1A E3
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: E3
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Package / Case: E3
Packaging: Bulk
Qualification: MIL-PRF-19500/286
Grade: Military
товару немає в наявності
 Мінімальне замовлення: 110 шт
В кошику  од. на суму  грн.
JANTX1N4249 JANTX1N4249 Microchip Technology 123513-lds-0191-datasheet Description: DIODE STANDARD 1KV 1AXIAL
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500/286
Grade: Military
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
JANTX1N4942 JANTX1N4942 Microchip Technology 129281-lds-0295-datasheet Description: DIODE STANDARD 200V 1A AXIAL
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500/359
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Technology: Standard
товару немає в наявності
В кошику  од. на суму  грн.
JANTX1N4944 JANTX1N4944 Microchip Technology 129281-lds-0295-datasheet Description: DIODE STANDARD 400V 1A AXIAL
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500/359
Grade: Military
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
товару немає в наявності
 Мінімальне замовлення: 122 шт
В кошику  од. на суму  грн.
JANTX1N4960 JANTX1N4960 Microchip Technology 10913-sa5-37-datasheet Description: DIODE ZENER 12V 5W AXIAL
Impedance (Max) (Zzt): 2.5 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Qualification: MIL-PRF-19500/356
Grade: Military
Current - Reverse Leakage @ Vr: 10 µA @ 9.1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Part Status: Active
Power - Max: 5 W
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: E, Axial
Tolerance: ±5%
Packaging: Bulk
товару немає в наявності
В кошику  од. на суму  грн.
JANTX1N4960US JANTX1N4960US Microchip Technology 11059-sd44a-datasheet Description: DIODE ZENER 12V 5W D5B
Qualification: MIL-PRF-19500/356
Current - Reverse Leakage @ Vr: 10 µA @ 9.1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Grade: Military
Supplier Device Package: D-5B
Impedance (Max) (Zzt): 2.5 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Tolerance: ±5%
Packaging: Bulk
на замовлення 66 шт:
термін постачання 21-31 дні (днів)
1+666.32 грн
В кошику  од. на суму  грн.
JANTX1N4980US JANTX1N4980US Microchip Technology 11059-sd44a-datasheet Description: DIODE ZENER 82V 5W D5B
Package / Case: SQ-MELF, E
Tolerance: ±5%
Packaging: Bulk
Qualification: MIL-PRF-19500/356
Current - Reverse Leakage @ Vr: 2 µA @ 62.2 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Grade: Military
Supplier Device Package: D-5B
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 82 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
товару немає в наявності
 Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JANTX1N4987 JANTX1N4987 Microchip Technology 10913-sa5-37-datasheet Description: DIODE ZENER 160V 5W AXIAL
Qualification: MIL-PRF-19500/356
Grade: Military
Current - Reverse Leakage @ Vr: 2 µA @ 121.6 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Impedance (Max) (Zzt): 350 Ohms
Voltage - Zener (Nom) (Vz): 160 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: E, Axial
Tolerance: ±5%
Packaging: Bulk
товару немає в наявності
 Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JANTX1N4987US JANTX1N4987US Microchip Technology 11059-sd44a-datasheet Description: DIODE ZENER 160V 5W D5B
Qualification: MIL-PRF-19500/356
Grade: Military
Current - Reverse Leakage @ Vr: 2 µA @ 121.6 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Supplier Device Package: D-5B
Impedance (Max) (Zzt): 350 Ohms
Voltage - Zener (Nom) (Vz): 160 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Tolerance: ±5%
Packaging: Bulk
товару немає в наявності
 Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JANTX1N5188 JANTX1N5188 Microchip Technology LDS-0216%2C+1N5186_1N5188_1N5190%2C+MIL-PRF-19500-424.pdf Description: DIODE STANDARD 400V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Grade: Military
Qualification: MIL-PRF-19500/424
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
1+683.53 грн
100+611.18 грн
В кошику  од. на суму  грн.
JANTX1N5416US JANTX1N5416US Microchip Technology LDS-0231-1%2C+1N5415US+thru1N5420US%2C+MIL-PRF-19500-411.pdf Description: DIODE STANDARD 100V 3A D5B
Qualification: MIL-PRF-19500/411
Grade: Military
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Packaging: Bulk
товару немає в наявності
 Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JANTX1N5418 JANTX1N5418 Microchip Technology LDS-0231%2C+1N5415+thru+1N5420%2C+MIL-PRF-19500-411.pdf Description: DIODE STANDARD 400V 3A B AXIAL
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500/411
Grade: Military
на замовлення 137 шт:
термін постачання 21-31 дні (днів)
1+394.94 грн
100+353.16 грн
В кошику  од. на суму  грн.
JANTX1N5418US JANTX1N5418US Microchip Technology 11075-lds-0231-1-datasheet Description: DIODE GEN PURP 400V 3A D-5B
Qualification: MIL-PRF-19500/411
Grade: Military
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Packaging: Bulk
товару немає в наявності
 Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JANTX1N5420 JANTX1N5420 Microchip Technology LDS-0231%2C+1N5415+thru+1N5420%2C+MIL-PRF-19500-411.pdf Description: DIODE STANDARD 600V 3A B AXIAL
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 400 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500/411
Grade: Military
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 152 шт:
термін постачання 21-31 дні (днів)
1+610.80 грн
100+546.21 грн
В кошику  од. на суму  грн.
JANTX1N5420US JANTX1N5420US Microchip Technology LDS-0231-1%2C+1N5415US+thru1N5420US%2C+MIL-PRF-19500-411.pdf Description: DIODE STANDARD 600V 3A D5B
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 400 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Packaging: Bulk
Qualification: MIL-PRF-19500/411
Grade: Military
на замовлення 182 шт:
термін постачання 21-31 дні (днів)
1+844.63 грн
100+755.39 грн
В кошику  од. на суму  грн.
JANTX1N5550 JANTX1N5550 Microchip Technology LDS-0230%2C+1N5550+thru+1N5554%2C+MIL-PRF-19500-420.pdf Description: DIODE STANDARD 200V 5A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Grade: Military
Qualification: MIL-PRF-19500/420
на замовлення 29 шт:
термін постачання 21-31 дні (днів)
1+422.32 грн
В кошику  од. на суму  грн.
JANTX1N5551 JANTX1N5551 Microchip Technology LDS-0230%2C+1N5550+thru+1N5554%2C+MIL-PRF-19500-420.pdf Description: DIODE STANDARD 400V 5A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Grade: Military
Qualification: MIL-PRF-19500/420
на замовлення 132 шт:
термін постачання 21-31 дні (днів)
1+414.50 грн
100+370.97 грн
В кошику  од. на суму  грн.
JANTX1N5552 JANTX1N5552 Microchip Technology LDS-0230%2C+1N5550+thru+1N5554%2C+MIL-PRF-19500-420.pdf Description: DIODE STANDARD 600V 5A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Grade: Military
Qualification: MIL-PRF-19500/420
товару немає в наявності
В кошику  од. на суму  грн.
JANTX1N5553 JANTX1N5553 Microchip Technology LDS-0230%2C+1N5550+thru+1N5554%2C+MIL-PRF-19500-420.pdf Description: DIODE STANDARD 800V 5A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Grade: Military
Qualification: MIL-PRF-19500/420
на замовлення 189 шт:
термін постачання 21-31 дні (днів)
1+494.27 грн
100+442.27 грн
В кошику  од. на суму  грн.
JANTX1N5554 JANTX1N5554 Microchip Technology LDS-0230%2C+1N5550+thru+1N5554%2C+MIL-PRF-19500-420.pdf Description: DIODE STANDARD 1000V 5A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 1000 V
Grade: Military
Qualification: MIL-PRF-19500/420
на замовлення 173 шт:
термін постачання 21-31 дні (днів)
1+524.77 грн
100+469.33 грн
В кошику  од. на суму  грн.
JANTX1N5618 JANTX1N5618 Microchip Technology SD46A%2C+1N5614+thru+1N5622%2C+MIL-PRF-19500-427.pdf Description: DIODE STANDARD 600V 1A AXIAL
Qualification: MIL-PRF-19500/427
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
на замовлення 115 шт:
термін постачання 21-31 дні (днів)
1+314.39 грн
100+281.65 грн
В кошику  од. на суму  грн.
JANTX1N5804 Microchip Technology Description: DIODE STANDARD 100V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Supplier Device Package: A, Axial
Grade: Military
Qualification: MIL-PRF-19500/477
на замовлення 86 шт:
термін постачання 21-31 дні (днів)
1+443.43 грн
В кошику  од. на суму  грн.
JANTX1N5804US JANTX1N5804US Microchip Technology LDS-0211+%282%29%2C+1N5802-1N5804-1N5806%2C+MIL-PRF-19500-477.pdf Description: DIODE STANDARD 100V 1A D5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: MIL-PRF-19500/477
товару немає в наявності
В кошику  од. на суму  грн.
JANTX1N6105AUS JANTX1N6105AUS Microchip Technology lds-0277-1.pdf Description: TVS DIODE 6.9VWM 13.4V B SQMELF
Qualification: MIL-PRF-19500/516
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 13.4V
Voltage - Breakdown (Min): 8.65V
Bidirectional Channels: 1
Supplier Device Package: B, SQ-MELF
Voltage - Reverse Standoff (Typ): 6.9V
Current - Peak Pulse (10/1000µs): 37.3A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Bulk
на замовлення 112 шт:
термін постачання 21-31 дні (днів)
1+1112.10 грн
100+994.56 грн
В кошику  од. на суму  грн.
JANTX1N6118AUS JANTX1N6118AUS Microchip Technology lds-0277-1.pdf Description: TVS DIODE 25.1VWM 45.7VC SQMELF
Voltage - Clamping (Max) @ Ipp: 45.7V
Voltage - Breakdown (Min): 31.4V
Bidirectional Channels: 1
Supplier Device Package: B, SQ-MELF
Voltage - Reverse Standoff (Typ): 25.1V
Current - Peak Pulse (10/1000µs): 10.9A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Bulk
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 500W
Qualification: MIL-PRF-19500/516
Grade: Military
товару немає в наявності
 Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JANTX1N6120AUS JANTX1N6120AUS Microchip Technology 127892-lds-0277-1-datasheet Description: TVS DIODE 29.7VWM 53.6VC SQ-MELF
товару немає в наявності
 Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JANTX1N6123A JANTX1N6123A Microchip Technology 127891-lds-0277-datasheet Description: TVS DIODE 38.8V 70.1V AXIAL
на замовлення 54 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
JANTX1N6126A JANTX1N6126A Microchip Technology lds-0277.pdf Description: TVS DIODE 51.7VWM 97.1V AXIAL
Qualification: MIL-PRF-19500/516
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 97.1V
Voltage - Breakdown (Min): 64.6V
Bidirectional Channels: 1
Supplier Device Package: B, Axial
Voltage - Reverse Standoff (Typ): 51.7V
Current - Peak Pulse (10/1000µs): 5.1A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
товару немає в наявності
 Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JANTX1N6126AUS JANTX1N6126AUS Microchip Technology lds-0277-1.pdf Description: TVS DIODE 51.7VWM 97.1VC SQMELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.1A
Voltage - Reverse Standoff (Typ): 51.7V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 97.1V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Grade: Military
Qualification: MIL-PRF-19500/516
товару немає в наявності
 Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JANTX1N6467 JANTX1N6467 Microchip Technology 10875-sa4-21-datasheet Description: TVS DIODE 40.3VWM 63.5V AXIAL
Voltage - Breakdown (Min): 43.7V
Unidirectional Channels: 1
Supplier Device Package: B, Axial
Voltage - Reverse Standoff (Typ): 40.3V
Current - Peak Pulse (10/1000µs): 45A (8/20µs)
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500/551
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 63.5V
на замовлення 112 шт:
термін постачання 21-31 дні (днів)
1+915.02 грн
100+818.32 грн
В кошику  од. на суму  грн.
JANTX1N6472 JANTX1N6472 Microchip Technology 11064-sd49a-datasheet Description: TVS DIODE 15VWM 26.5VC AXIAL
Qualification: MIL-PRF-19500/552
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 26.5V
Voltage - Breakdown (Min): 16.4V
Unidirectional Channels: 1
Supplier Device Package: Axial
Voltage - Reverse Standoff (Typ): 15V
Current - Peak Pulse (10/1000µs): 322A (8/20µs)
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: G, Axial
Packaging: Bulk
товару немає в наявності
 Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JANTX1N6620 JANTX1N6620 Microchip Technology 10972-sa7-55-datasheet Description: DIODE GEN PURP 220V 2A AXIAL
Current - Reverse Leakage @ Vr: 500 nA @ 220 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Voltage - DC Reverse (Vr) (Max): 220 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: Axial
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
товару немає в наявності
 Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JANTX1N6620US JANTX1N6620US Microchip Technology 11068-sd52a-datasheet Description: DIODE GEN PURP 220V 2A D-5A
Current - Reverse Leakage @ Vr: 500 nA @ 220 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Voltage - DC Reverse (Vr) (Max): 220 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: D-5A
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
товару немає в наявності
 Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JANTX1N6621 JANTX1N6621 Microchip Technology 10972-sa7-55-datasheet Description: DIODE GEN PURP 440V 2A AXIAL
Current - Reverse Leakage @ Vr: 500 nA @ 440 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Voltage - DC Reverse (Vr) (Max): 440 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
товару немає в наявності
 Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JANTX1N6621US JANTX1N6621US Microchip Technology 11068-sd52a-datasheet Description: DIODE GEN PURP 440V 2A D-5A
Qualification: MIL-PRF-19500/585
Grade: Military
Current - Reverse Leakage @ Vr: 500 nA @ 440 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Voltage - DC Reverse (Vr) (Max): 440 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: D-5A
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
товару немає в наявності
 Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JANTX1N6622US JANTX1N6622US Microchip Technology 11068-sd52a-datasheet Description: DIODE GEN PURP 660V 2A D-5A
Current - Reverse Leakage @ Vr: 500 nA @ 660 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Voltage - DC Reverse (Vr) (Max): 660 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: D-5A
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
товару немає в наявності
 Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JANTX1N6623US JANTX1N6623US Microchip Technology 11068-sd52a-datasheet Description: DIODE GEN PURP 880V 1A D5A
товару немає в наявності
 Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JANTX1N829-1 JANTX1N829-1 Microchip Technology 125462-lds-0220-datasheet Description: DIODE ZENER 6.2V 500MW DO35
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Qualification: MIL-PRF-19500/159
Grade: Military
товару немає в наявності
 Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JANTX1N829UR-1 Microchip Technology 11037-lds-0220-1-datasheet Description: DIODE ZENER 6.2V 500MW DO213AA
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Mounting Type: Surface Mount
Package / Case: DO-213AA
Tolerance: ±5%
Packaging: Bulk
Qualification: MIL-PRF-19500/159
Grade: Military
Power - Max: 500 mW
Part Status: Active
товару немає в наявності
 Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JANTX2N2219 JANTX2N2219 Microchip Technology 2N2218-2N2219AL-LDS0091-MIL-PRF-19500-251.pdf Description: TRANS NPN 30V 0.8A TO-39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/251
товару немає в наявності
 Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JANTX2N2219A JANTX2N2219A Microchip Technology 2N2218-2N2219AL-LDS0091-MIL-PRF-19500-251.pdf Description: TRANS NPN 50V 0.8A TO-39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/251
товару немає в наявності
В кошику  од. на суму  грн.
Jantx2N2219AL Jantx2N2219AL Microchip Technology 2N2218-2N2219AL-LDS0091-MIL-PRF-19500-251.pdf Description: TRANS NPN 50V 0.8A TO-39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/251
товару немає в наявності
 Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JANTX2N2222A JANTX2N2222A Microchip Technology MIL-PRF-19500_255AA_wAmendment1_5-19-16.pdf Description: TRANS NPN 50V 0.8A TO-218
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-218
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/255
товару немає в наявності
В кошику  од. на суму  грн.
JAN2N3439L 124290-lds-0022-1-datasheet
JAN2N3439L
Виробник: Microchip Technology
Description: TRANS NPN 350V 1A TO5
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 1 A
Part Status: Discontinued at Digi-Key
Supplier Device Package: TO-5
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 2µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Qualification: MIL-PRF-19500/368
Grade: Military
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JAN2N3440 LDS-0022_2N3439-40.pdf
JAN2N3440
Виробник: Microchip Technology
Description: TRANS NPN 250V 1A TO-39
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 1 A
Part Status: Discontinued at Digi-Key
Supplier Device Package: TO-39
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 2µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
Qualification: MIL-PRF-19500/368
Grade: Military
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JAN2N3440L 2N3439L-2N3440L-LDS-0022-1-MIL-PRF-19500-368.pdf
JAN2N3440L
Виробник: Microchip Technology
Description: TRANS NPN 250V 1A TO-5
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-5
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 2µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Qualification: MIL-PRF-19500/368
Grade: Military
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JAN2N3501 125197-lds-0276-datasheet
JAN2N3501
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A TO39
Qualification: MIL-PRF-19500/366
Grade: Military
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 300 mA
Part Status: Active
Supplier Device Package: TO-39 (TO-205AD)
на замовлення 37 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1004.18 грн
В кошику  од. на суму  грн.
JAN2N3501L 125198-lds-0276-1-datasheet
JAN2N3501L
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A TO-5
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 300 mA
Supplier Device Package: TO-5
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Qualification: MIL-PRF-19500/366
Grade: Military
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JAN2N3501UB 125200-lds-0276-3-datasheet
JAN2N3501UB
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A UB
Qualification: MIL-PRF-19500/366
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 300 mA
Grade: Military
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JAN2N3700 LDS-0185_2N3700.pdf
JAN2N3700
Виробник: Microchip Technology
Description: TRANS NPN 80V 1A TO-18
Qualification: MIL-PRF-19500/391
Grade: Military
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-18
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Current - Collector Cutoff (Max): 10nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
на замовлення 75 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+278.42 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
JAN2N3700UB 2N3700UB-LDS-0185-3-MIL-PRF-19500-391.pdf
JAN2N3700UB
Виробник: Microchip Technology
Description: TRANS NPN 80V 1A UB
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Current - Collector Cutoff (Max): 10nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Bulk
Qualification: MIL-PRF-19500/391
Grade: Military
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JAN2N3735 8978-lds-0173-datasheet
JAN2N3735
Виробник: Microchip Technology
Description: TRANS NPN 40V 1.5A TO-39
Qualification: MIL-PRF-19500/395
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1.5 A
Grade: Military
Supplier Device Package: TO-39
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JAN2N3735L 8978-lds-0173-datasheet
JAN2N3735L
Виробник: Microchip Technology
Description: TRANS NPN 40V 1.5A TO-5
Qualification: MIL-PRF-19500/395
Grade: Military
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1.5 A
Part Status: Active
Supplier Device Package: TO-5
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JAN2N3737UB 8978-lds-0173-datasheet
JAN2N3737UB
Виробник: Microchip Technology
Description: TRANS NPN 40V 1.5A UB
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1.5 A
Part Status: Active
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Bulk
Qualification: MIL-PRF-19500/395
Grade: Military
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
Jan2N3810L 8931-lds-0118-datasheet
Виробник: Microchip Technology
Description: TRANS 2PNP 60V 50MA TO-78-6
Qualification: MIL-PRF-19500/336
Grade: Military
Supplier Device Package: TO-78-6
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 50mA
Power - Max: 350mW
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JAN2N4033 6070-2n4029-datasheet
JAN2N4033
Виробник: Microchip Technology
Description: TRANS PNP 80V 1A TO39
Power - Max: 800 mW
Qualification: MIL-PRF-19500/512
Grade: Military
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-39 (TO-205AD)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JAN2N5582 6091-2n5581-datasheet
JAN2N5582
Виробник: Microchip Technology
Description: TRANS NPN 50V 0.8A TO46-3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Supplier Device Package: TO-46-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Qualification: MIL-PRF-19500/423
Grade: Military
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AB, TO-46-3 Metal Can
Packaging: Bulk
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -55°C ~ 200°C (TJ)
товару немає в наявності
Мінімальне замовлення: 105 шт
В кошику  од. на суму  грн.
JAN2N918UB
Виробник: Microchip Technology
Description: TRANS NPN 15V 0.05A
Packaging: Bulk
Package / Case: 3-SMD, Non-Standard
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
Grade: Military
Qualification: MIL-PRF-19500/301
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JANTX1N3613 1N3611-13%2C1N3614%2C1N3957.pdf
JANTX1N3613
Виробник: Microchip Technology
Description: DIODE STANDARD 600V 1A AXIAL
Qualification: MIL-PRF-19500/228
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
на замовлення 145 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+349.58 грн
100+312.22 грн
В кошику  од. на суму  грн.
JANTX1N3957 123512-lds-0190-datasheet
JANTX1N3957
Виробник: Microchip Technology
Description: DIODE GEN PURP 1KV 1A
Qualification: MIL-PRF-19500/228
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 120 шт
В кошику  од. на суму  грн.
JANTX1N4248 123513-lds-0191-datasheet
JANTX1N4248
Виробник: Microchip Technology
Description: DIODE GEN PURP 800V 1A E3
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: E3
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Package / Case: E3
Packaging: Bulk
Qualification: MIL-PRF-19500/286
Grade: Military
товару немає в наявності
Мінімальне замовлення: 110 шт
В кошику  од. на суму  грн.
JANTX1N4249 123513-lds-0191-datasheet
JANTX1N4249
Виробник: Microchip Technology
Description: DIODE STANDARD 1KV 1AXIAL
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500/286
Grade: Military
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
JANTX1N4942 129281-lds-0295-datasheet
JANTX1N4942
Виробник: Microchip Technology
Description: DIODE STANDARD 200V 1A AXIAL
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500/359
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Technology: Standard
товару немає в наявності
В кошику  од. на суму  грн.
JANTX1N4944 129281-lds-0295-datasheet
JANTX1N4944
Виробник: Microchip Technology
Description: DIODE STANDARD 400V 1A AXIAL
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500/359
Grade: Military
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
товару немає в наявності
Мінімальне замовлення: 122 шт
В кошику  од. на суму  грн.
JANTX1N4960 10913-sa5-37-datasheet
JANTX1N4960
Виробник: Microchip Technology
Description: DIODE ZENER 12V 5W AXIAL
Impedance (Max) (Zzt): 2.5 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Qualification: MIL-PRF-19500/356
Grade: Military
Current - Reverse Leakage @ Vr: 10 µA @ 9.1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Part Status: Active
Power - Max: 5 W
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: E, Axial
Tolerance: ±5%
Packaging: Bulk
товару немає в наявності
В кошику  од. на суму  грн.
JANTX1N4960US 11059-sd44a-datasheet
JANTX1N4960US
Виробник: Microchip Technology
Description: DIODE ZENER 12V 5W D5B
Qualification: MIL-PRF-19500/356
Current - Reverse Leakage @ Vr: 10 µA @ 9.1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Grade: Military
Supplier Device Package: D-5B
Impedance (Max) (Zzt): 2.5 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Tolerance: ±5%
Packaging: Bulk
на замовлення 66 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+666.32 грн
В кошику  од. на суму  грн.
JANTX1N4980US 11059-sd44a-datasheet
JANTX1N4980US
Виробник: Microchip Technology
Description: DIODE ZENER 82V 5W D5B
Package / Case: SQ-MELF, E
Tolerance: ±5%
Packaging: Bulk
Qualification: MIL-PRF-19500/356
Current - Reverse Leakage @ Vr: 2 µA @ 62.2 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Grade: Military
Supplier Device Package: D-5B
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 82 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JANTX1N4987 10913-sa5-37-datasheet
JANTX1N4987
Виробник: Microchip Technology
Description: DIODE ZENER 160V 5W AXIAL
Qualification: MIL-PRF-19500/356
Grade: Military
Current - Reverse Leakage @ Vr: 2 µA @ 121.6 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Impedance (Max) (Zzt): 350 Ohms
Voltage - Zener (Nom) (Vz): 160 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: E, Axial
Tolerance: ±5%
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JANTX1N4987US 11059-sd44a-datasheet
JANTX1N4987US
Виробник: Microchip Technology
Description: DIODE ZENER 160V 5W D5B
Qualification: MIL-PRF-19500/356
Grade: Military
Current - Reverse Leakage @ Vr: 2 µA @ 121.6 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Supplier Device Package: D-5B
Impedance (Max) (Zzt): 350 Ohms
Voltage - Zener (Nom) (Vz): 160 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Tolerance: ±5%
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JANTX1N5188 LDS-0216%2C+1N5186_1N5188_1N5190%2C+MIL-PRF-19500-424.pdf
JANTX1N5188
Виробник: Microchip Technology
Description: DIODE STANDARD 400V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Grade: Military
Qualification: MIL-PRF-19500/424
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+683.53 грн
100+611.18 грн
В кошику  од. на суму  грн.
JANTX1N5416US LDS-0231-1%2C+1N5415US+thru1N5420US%2C+MIL-PRF-19500-411.pdf
JANTX1N5416US
Виробник: Microchip Technology
Description: DIODE STANDARD 100V 3A D5B
Qualification: MIL-PRF-19500/411
Grade: Military
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JANTX1N5418 LDS-0231%2C+1N5415+thru+1N5420%2C+MIL-PRF-19500-411.pdf
JANTX1N5418
Виробник: Microchip Technology
Description: DIODE STANDARD 400V 3A B AXIAL
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500/411
Grade: Military
на замовлення 137 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+394.94 грн
100+353.16 грн
В кошику  од. на суму  грн.
JANTX1N5418US 11075-lds-0231-1-datasheet
JANTX1N5418US
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 3A D-5B
Qualification: MIL-PRF-19500/411
Grade: Military
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JANTX1N5420 LDS-0231%2C+1N5415+thru+1N5420%2C+MIL-PRF-19500-411.pdf
JANTX1N5420
Виробник: Microchip Technology
Description: DIODE STANDARD 600V 3A B AXIAL
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 400 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500/411
Grade: Military
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 152 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+610.80 грн
100+546.21 грн
В кошику  од. на суму  грн.
JANTX1N5420US LDS-0231-1%2C+1N5415US+thru1N5420US%2C+MIL-PRF-19500-411.pdf
JANTX1N5420US
Виробник: Microchip Technology
Description: DIODE STANDARD 600V 3A D5B
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 400 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Packaging: Bulk
Qualification: MIL-PRF-19500/411
Grade: Military
на замовлення 182 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+844.63 грн
100+755.39 грн
В кошику  од. на суму  грн.
JANTX1N5550 LDS-0230%2C+1N5550+thru+1N5554%2C+MIL-PRF-19500-420.pdf
JANTX1N5550
Виробник: Microchip Technology
Description: DIODE STANDARD 200V 5A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Grade: Military
Qualification: MIL-PRF-19500/420
на замовлення 29 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+422.32 грн
В кошику  од. на суму  грн.
JANTX1N5551 LDS-0230%2C+1N5550+thru+1N5554%2C+MIL-PRF-19500-420.pdf
JANTX1N5551
Виробник: Microchip Technology
Description: DIODE STANDARD 400V 5A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Grade: Military
Qualification: MIL-PRF-19500/420
на замовлення 132 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+414.50 грн
100+370.97 грн
В кошику  од. на суму  грн.
JANTX1N5552 LDS-0230%2C+1N5550+thru+1N5554%2C+MIL-PRF-19500-420.pdf
JANTX1N5552
Виробник: Microchip Technology
Description: DIODE STANDARD 600V 5A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Grade: Military
Qualification: MIL-PRF-19500/420
товару немає в наявності
В кошику  од. на суму  грн.
JANTX1N5553 LDS-0230%2C+1N5550+thru+1N5554%2C+MIL-PRF-19500-420.pdf
JANTX1N5553
Виробник: Microchip Technology
Description: DIODE STANDARD 800V 5A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Grade: Military
Qualification: MIL-PRF-19500/420
на замовлення 189 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+494.27 грн
100+442.27 грн
В кошику  од. на суму  грн.
JANTX1N5554 LDS-0230%2C+1N5550+thru+1N5554%2C+MIL-PRF-19500-420.pdf
JANTX1N5554
Виробник: Microchip Technology
Description: DIODE STANDARD 1000V 5A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 1000 V
Grade: Military
Qualification: MIL-PRF-19500/420
на замовлення 173 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+524.77 грн
100+469.33 грн
В кошику  од. на суму  грн.
JANTX1N5618 SD46A%2C+1N5614+thru+1N5622%2C+MIL-PRF-19500-427.pdf
JANTX1N5618
Виробник: Microchip Technology
Description: DIODE STANDARD 600V 1A AXIAL
Qualification: MIL-PRF-19500/427
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
на замовлення 115 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+314.39 грн
100+281.65 грн
В кошику  од. на суму  грн.
JANTX1N5804
Виробник: Microchip Technology
Description: DIODE STANDARD 100V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Supplier Device Package: A, Axial
Grade: Military
Qualification: MIL-PRF-19500/477
на замовлення 86 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+443.43 грн
В кошику  од. на суму  грн.
JANTX1N5804US LDS-0211+%282%29%2C+1N5802-1N5804-1N5806%2C+MIL-PRF-19500-477.pdf
JANTX1N5804US
Виробник: Microchip Technology
Description: DIODE STANDARD 100V 1A D5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: MIL-PRF-19500/477
товару немає в наявності
В кошику  од. на суму  грн.
JANTX1N6105AUS lds-0277-1.pdf
JANTX1N6105AUS
Виробник: Microchip Technology
Description: TVS DIODE 6.9VWM 13.4V B SQMELF
Qualification: MIL-PRF-19500/516
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 13.4V
Voltage - Breakdown (Min): 8.65V
Bidirectional Channels: 1
Supplier Device Package: B, SQ-MELF
Voltage - Reverse Standoff (Typ): 6.9V
Current - Peak Pulse (10/1000µs): 37.3A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Bulk
на замовлення 112 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1112.10 грн
100+994.56 грн
В кошику  од. на суму  грн.
JANTX1N6118AUS lds-0277-1.pdf
JANTX1N6118AUS
Виробник: Microchip Technology
Description: TVS DIODE 25.1VWM 45.7VC SQMELF
Voltage - Clamping (Max) @ Ipp: 45.7V
Voltage - Breakdown (Min): 31.4V
Bidirectional Channels: 1
Supplier Device Package: B, SQ-MELF
Voltage - Reverse Standoff (Typ): 25.1V
Current - Peak Pulse (10/1000µs): 10.9A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Bulk
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 500W
Qualification: MIL-PRF-19500/516
Grade: Military
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JANTX1N6120AUS 127892-lds-0277-1-datasheet
JANTX1N6120AUS
Виробник: Microchip Technology
Description: TVS DIODE 29.7VWM 53.6VC SQ-MELF
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JANTX1N6123A 127891-lds-0277-datasheet
JANTX1N6123A
Виробник: Microchip Technology
Description: TVS DIODE 38.8V 70.1V AXIAL
на замовлення 54 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
JANTX1N6126A lds-0277.pdf
JANTX1N6126A
Виробник: Microchip Technology
Description: TVS DIODE 51.7VWM 97.1V AXIAL
Qualification: MIL-PRF-19500/516
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 97.1V
Voltage - Breakdown (Min): 64.6V
Bidirectional Channels: 1
Supplier Device Package: B, Axial
Voltage - Reverse Standoff (Typ): 51.7V
Current - Peak Pulse (10/1000µs): 5.1A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JANTX1N6126AUS lds-0277-1.pdf
JANTX1N6126AUS
Виробник: Microchip Technology
Description: TVS DIODE 51.7VWM 97.1VC SQMELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.1A
Voltage - Reverse Standoff (Typ): 51.7V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 97.1V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Grade: Military
Qualification: MIL-PRF-19500/516
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JANTX1N6467 10875-sa4-21-datasheet
JANTX1N6467
Виробник: Microchip Technology
Description: TVS DIODE 40.3VWM 63.5V AXIAL
Voltage - Breakdown (Min): 43.7V
Unidirectional Channels: 1
Supplier Device Package: B, Axial
Voltage - Reverse Standoff (Typ): 40.3V
Current - Peak Pulse (10/1000µs): 45A (8/20µs)
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500/551
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 63.5V
на замовлення 112 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+915.02 грн
100+818.32 грн
В кошику  од. на суму  грн.
JANTX1N6472 11064-sd49a-datasheet
JANTX1N6472
Виробник: Microchip Technology
Description: TVS DIODE 15VWM 26.5VC AXIAL
Qualification: MIL-PRF-19500/552
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 26.5V
Voltage - Breakdown (Min): 16.4V
Unidirectional Channels: 1
Supplier Device Package: Axial
Voltage - Reverse Standoff (Typ): 15V
Current - Peak Pulse (10/1000µs): 322A (8/20µs)
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: G, Axial
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JANTX1N6620 10972-sa7-55-datasheet
JANTX1N6620
Виробник: Microchip Technology
Description: DIODE GEN PURP 220V 2A AXIAL
Current - Reverse Leakage @ Vr: 500 nA @ 220 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Voltage - DC Reverse (Vr) (Max): 220 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: Axial
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JANTX1N6620US 11068-sd52a-datasheet
JANTX1N6620US
Виробник: Microchip Technology
Description: DIODE GEN PURP 220V 2A D-5A
Current - Reverse Leakage @ Vr: 500 nA @ 220 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Voltage - DC Reverse (Vr) (Max): 220 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: D-5A
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JANTX1N6621 10972-sa7-55-datasheet
JANTX1N6621
Виробник: Microchip Technology
Description: DIODE GEN PURP 440V 2A AXIAL
Current - Reverse Leakage @ Vr: 500 nA @ 440 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Voltage - DC Reverse (Vr) (Max): 440 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JANTX1N6621US 11068-sd52a-datasheet
JANTX1N6621US
Виробник: Microchip Technology
Description: DIODE GEN PURP 440V 2A D-5A
Qualification: MIL-PRF-19500/585
Grade: Military
Current - Reverse Leakage @ Vr: 500 nA @ 440 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Voltage - DC Reverse (Vr) (Max): 440 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: D-5A
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JANTX1N6622US 11068-sd52a-datasheet
JANTX1N6622US
Виробник: Microchip Technology
Description: DIODE GEN PURP 660V 2A D-5A
Current - Reverse Leakage @ Vr: 500 nA @ 660 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Voltage - DC Reverse (Vr) (Max): 660 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: D-5A
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JANTX1N6623US 11068-sd52a-datasheet
JANTX1N6623US
Виробник: Microchip Technology
Description: DIODE GEN PURP 880V 1A D5A
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JANTX1N829-1 125462-lds-0220-datasheet
JANTX1N829-1
Виробник: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO35
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Qualification: MIL-PRF-19500/159
Grade: Military
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JANTX1N829UR-1 11037-lds-0220-1-datasheet
Виробник: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO213AA
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Mounting Type: Surface Mount
Package / Case: DO-213AA
Tolerance: ±5%
Packaging: Bulk
Qualification: MIL-PRF-19500/159
Grade: Military
Power - Max: 500 mW
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JANTX2N2219 2N2218-2N2219AL-LDS0091-MIL-PRF-19500-251.pdf
JANTX2N2219
Виробник: Microchip Technology
Description: TRANS NPN 30V 0.8A TO-39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/251
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JANTX2N2219A 2N2218-2N2219AL-LDS0091-MIL-PRF-19500-251.pdf
JANTX2N2219A
Виробник: Microchip Technology
Description: TRANS NPN 50V 0.8A TO-39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/251
товару немає в наявності
В кошику  од. на суму  грн.
Jantx2N2219AL 2N2218-2N2219AL-LDS0091-MIL-PRF-19500-251.pdf
Jantx2N2219AL
Виробник: Microchip Technology
Description: TRANS NPN 50V 0.8A TO-39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/251
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
JANTX2N2222A MIL-PRF-19500_255AA_wAmendment1_5-19-16.pdf
JANTX2N2222A
Виробник: Microchip Technology
Description: TRANS NPN 50V 0.8A TO-218
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-218
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/255
товару немає в наявності
В кошику  од. на суму  грн.
Обрати Сторінку:   [  << Попередня Сторінка ]  1 463 814 815 816 817 818 819 820 821 822 823 824 926 1389 1852 2315 2778 3241 3704 4167 4630 4635  [ Наступна Сторінка >> ]