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PIC32MX270F256BT-50I/SS PIC32MX270F256BT-50I/SS Microchip Technology PIC32MX1XX2XX%20283644-PIN_Datasheet_DS60001168L.pdf Description: IC MCU 32BIT 256KB FLASH 28SSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 50MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® M4K™
Data Converters: A/D 9x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.3V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 19
DigiKey Programmable: Not Verified
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PIC32MX270F256BT-I/ML PIC32MX270F256BT-I/ML Microchip Technology PIC32MX1XX2XX%20283644-PIN_Datasheet_DS60001168L.pdf Description: IC MCU 32BIT 256KB FLASH 28QFN
Packaging: Tape & Reel (TR)
Package / Case: 28-VQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® M4K™
Data Converters: A/D 9x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.3V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 28-QFN (6x6)
Number of I/O: 19
DigiKey Programmable: Not Verified
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PIC32MX270F256BT-I/SO PIC32MX270F256BT-I/SO Microchip Technology PIC32MX1XX2XX%20283644-PIN_Datasheet_DS60001168L.pdf Description: IC MCU 32BIT 256KB FLASH 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® M4K™
Data Converters: A/D 9x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.3V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 28-SOIC
Number of I/O: 19
DigiKey Programmable: Not Verified
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PIC32MX270F256BT-I/SS PIC32MX270F256BT-I/SS Microchip Technology PIC32MX1XX2XX%20283644-PIN_Datasheet_DS60001168L.pdf Description: IC MCU 32BIT 256KB FLASH 28SSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® M4K™
Data Converters: A/D 9x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.3V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 19
DigiKey Programmable: Not Verified
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PIC32MX270F256BT-V/ML PIC32MX270F256BT-V/ML Microchip Technology PIC32MX1XX2XX%20283644-PIN_Datasheet_DS60001168L.pdf Description: IC MCU 32BIT 256KB FLASH 28QFN
Packaging: Tape & Reel (TR)
Package / Case: 28-VQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® M4K™
Data Converters: A/D 9x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.3V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 28-QFN (6x6)
Grade: Automotive
Number of I/O: 19
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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PIC32MX270F256BT-V/SO PIC32MX270F256BT-V/SO Microchip Technology PIC32MX1XX2XX%20283644-PIN_Datasheet_DS60001168L.pdf Description: IC MCU 32BIT 256KB FLASH 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® M4K™
Data Converters: A/D 9x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.3V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 28-SOIC
Number of I/O: 19
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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PIC32MX270F256BT-V/SS PIC32MX270F256BT-V/SS Microchip Technology PIC32MX1XX2XX%20283644-PIN_Datasheet_DS60001168L.pdf Description: IC MCU 32BIT 256KB FLASH 28SSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® M4K™
Data Converters: A/D 9x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.3V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 19
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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PIC32MX270F256DT-50I/ML PIC32MX270F256DT-50I/ML Microchip Technology filehandler.aspx?ddocname=en556030 Description: IC MCU 32BIT 256KB FLASH 44QFN
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PIC32MX270F256DT-50I/PT PIC32MX270F256DT-50I/PT Microchip Technology filehandler.aspx?ddocname=en556030 Description: IC MCU 32BIT 256KB FLASH 44TQFP
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PIC32MX270F256DT-50I/TL PIC32MX270F256DT-50I/TL Microchip Technology filehandler.aspx?ddocname=en556030 Description: IC MCU 32BIT 256KB FLASH 44VTLA
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PS10NG-G-M905 PS10NG-G-M905 Microchip Technology PS10%20C080613.pdf Description: IC PWM CONTROLLER 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: -90V ~ -10V
Applications: Power Supply Sequencer
Supplier Device Package: 14-SOIC
Current - Supply: 400 µA
DigiKey Programmable: Not Verified
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PS30MG-G PS30MG-G Microchip Technology ps30.pdf Description: IC LED DRIVER OFFL 10MSOP
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SR036SG-G SR036SG-G Microchip Technology SR036.pdf Description: IC OFFLINE SW INDUCTORLS 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C (TA)
Internal Switch(s): No
Output Isolation: Non-Isolated
Topology: Inductorless
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Power (Watts): 1 W
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SR037SG-G SR037SG-G Microchip Technology SR037.pdf Description: IC OFFLINE SW INDUCTORLS 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C (TA)
Internal Switch(s): No
Output Isolation: Non-Isolated
Topology: Inductorless
Supplier Device Package: 8-SOIC-EP
Part Status: Obsolete
Power (Watts): 1 W
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SR086SG-G SR086SG-G Microchip Technology 20005544A.pdf Description: IC OFFLINE SW INDUCTORLS 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): No
Output Isolation: Non-Isolated
Topology: Inductorless
Supplier Device Package: 8-SOIC-EP
Control Features: EN
на замовлення 3300 шт:
термін постачання 21-31 дні (днів)
3300+90.84 грн
Мінімальне замовлення: 3300
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SR087SG-G SR087SG-G Microchip Technology 20005544A.pdf Description: IC OFFLINE SW INDUCTORLS 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): No
Output Isolation: Non-Isolated
Topology: Inductorless
Supplier Device Package: 8-SOIC-EP
Control Features: EN
на замовлення 3300 шт:
термін постачання 21-31 дні (днів)
3300+82.40 грн
Мінімальне замовлення: 3300
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SR10LG-G SR10LG-G Microchip Technology SR10%20B080613.pdf Description: IC OFFLINE SWITCH SHUNT 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 50Hz ~ 60Hz
Internal Switch(s): Yes
Output Isolation: Non-Isolated
Topology: Shunt
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting
Part Status: Active
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)
3300+37.65 грн
Мінімальне замовлення: 3300
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TC1550TG-G TC1550TG-G Microchip Technology tc1550.pdf Description: MOSFET N/P-CH 500V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 25V, 70pF @ 25V
Rds On (Max) @ Id, Vgs: 60Ohm @ 50mA, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 3300 шт:
термін постачання 21-31 дні (днів)
3300+433.38 грн
Мінімальне замовлення: 3300
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TC2320TG-G TC2320TG-G Microchip Technology TC2320-N-Channel-and-P-Channel-Enhancement-Mode-Dual-MOSFET-Data-Sheet-20005708B.pdf Description: MOSFET N/P-CH 200V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V, 125pF @ 25V
Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 8-SOIC
Part Status: Active
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TC6215TG-G TC6215TG-G Microchip Technology tc6215.pdf Description: MOSFET N/P-CH 150V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V
Rds On (Max) @ Id, Vgs: 4Ohm @ 2A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 8-SOIC
Part Status: Active
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TC6320K6-G TC6320K6-G Microchip Technology 20005697A.pdf Description: MOSFET N/P-CH 200V 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V, 125pF @ 25V
Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 8-DFN (4x4)
Part Status: Active
на замовлення 3300 шт:
термін постачання 21-31 дні (днів)
3300+103.50 грн
Мінімальне замовлення: 3300
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TC6320TG-G TC6320TG-G Microchip Technology TC6320-N-Channel-and-P-Channel-Enhancement-Mode-MOSFET-Pair-Data-Sheet-DS20005697.pdf Description: MOSFET N/P-CH 200V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V, 125pF @ 25V
Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 3300 шт:
термін постачання 21-31 дні (днів)
3300+96.09 грн
Мінімальне замовлення: 3300
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TC8020K6-G-M937 TC8020K6-G-M937 Microchip Technology tc8020.pdf Description: MOSFET 6N/6P-CH 200V 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 6 N and 6 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 8Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 56-QFN (8x8)
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TC8220K6-G TC8220K6-G Microchip Technology TC8220B080713.pdf Description: MOSFET 2N/2P-CH 200V 12DFN
Packaging: Tape & Reel (TR)
Package / Case: 12-VFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 25V, 75pF @ 25V
Rds On (Max) @ Id, Vgs: 6Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 12-DFN (4x4)
Part Status: Active
на замовлення 3300 шт:
термін постачання 21-31 дні (днів)
3300+137.80 грн
Мінімальне замовлення: 3300
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TN0104N3-G-P003 TN0104N3-G-P003 Microchip Technology TN0104-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005930A.pdf Description: MOSFET N-CH 40V 450MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 500µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 20 V
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TN0104N3-G-P014 TN0104N3-G-P014 Microchip Technology TN0104-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005930A.pdf Description: MOSFET N-CH 40V 450MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 500µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 20 V
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TN0104N8-G TN0104N8-G Microchip Technology TN0104-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005930A.pdf Description: MOSFET N-CH 40V 630MA TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 630mA (Tj)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 10V
Power Dissipation (Max): 1.6W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 500µA
Supplier Device Package: TO-243AA (SOT-89)
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 20 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
2000+76.90 грн
Мінімальне замовлення: 2000
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TN0106N3-G-P013 TN0106N3-G-P013 Microchip Technology TN0106-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005932A.pdf Description: MOSFET N-CH 60V 350MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 500µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
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TN0604N3-G-P005 TN0604N3-G-P005 Microchip Technology TN0604-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005934A.pdf Description: MOSFET N-CH 40V 700MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Tj)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.5A, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 20 V
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TN0604N3-G-P013 TN0604N3-G-P013 Microchip Technology TN0604-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005934A.pdf Description: MOSFET N-CH 40V 700MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Tj)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.5A, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 20 V
товару немає в наявності
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TN0610N3-G-P003 TN0610N3-G-P003 Microchip Technology TN0610-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20006418A.pdf Description: MOSFET N-CH 100V 500MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Tj)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
товару немає в наявності
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TN0610N3-G-P013 TN0610N3-G-P013 Microchip Technology TN0610-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20006418A.pdf Description: MOSFET N-CH 100V 500MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Tj)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
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TN0620N3-G-P014 TN0620N3-G-P014 Microchip Technology TN0620-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005936A.pdf Description: MOSFET N-CH 200V 250MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Tj)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
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TN2106K1-G TN2106K1-G Microchip Technology TN2106-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005942A.pdf Description: MOSFET N-CH 60V 280MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280mA (Tj)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-236AB (SOT23)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
3000+37.46 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
TN2124K1-G TN2124K1-G Microchip Technology TN2124-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005698A.pdf Description: MOSFET N-CH 240V 134MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 134mA (Tj)
Rds On (Max) @ Id, Vgs: 15Ohm @ 120mA, 4.5V
Power Dissipation (Max): 360mW (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-236AB (SOT23)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
TN2501N8-G TN2501N8-G Microchip Technology filehandler.aspx?ddocname=en570663 Description: MOSFET N-CH 18V 400MA SOT89-3
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TN2510N8-G TN2510N8-G Microchip Technology TN2510-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005950A.pdf Description: MOSFET N-CH 100V 730MA TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 730mA (Tj)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
2000+72.45 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
TN2524N8-G TN2524N8-G Microchip Technology TN2524-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005952A.pdf Description: MOSFET N-CH 240V 360MA TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Tj)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 1.6W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
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TN2540N3-G-P002 TN2540N3-G-P002 Microchip Technology TN2540-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005954A.pdf Description: MOSFET N-CH 400V 175MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175mA (Tj)
Rds On (Max) @ Id, Vgs: 12Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
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TN2540N8-G TN2540N8-G Microchip Technology TN2540-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005954A.pdf Description: MOSFET N-CH 400V 260MA TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260mA (Tj)
Rds On (Max) @ Id, Vgs: 12Ohm @ 500mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
2000+90.21 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
TN5325K1-G TN5325K1-G Microchip Technology 20005709A.pdf Description: MOSFET N-CH 250V 150MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-236AB (SOT23)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+38.99 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
TN5325N3-G-P002 TN5325N3-G-P002 Microchip Technology 20005709A.pdf Description: MOSFET N-CH 250V 215MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 215mA (Ta)
Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V
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TN5325N8-G TN5325N8-G Microchip Technology 20005709A.pdf Description: MOSFET N-CH 250V 316MA TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 316mA (Tj)
Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+45.25 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
TP0606N3-G-P002 TP0606N3-G-P002 Microchip Technology TP0606.pdf Description: MOSFET P-CH 60V 320MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Tj)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
товару немає в наявності
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TP0606N3-G-P003 TP0606N3-G-P003 Microchip Technology TP0606.pdf Description: MOSFET P-CH 60V 320MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Tj)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
товару немає в наявності
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TP0610T-G TP0610T-G Microchip Technology TP0610T-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005701B.pdf Description: MOSFET P-CH 60V 120MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Tj)
Rds On (Max) @ Id, Vgs: 10Ohm @ 200mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-236AB (SOT23)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+50.09 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
TP2104K1-G TP2104K1-G Microchip Technology TP2104-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005958A.pdf Description: MOSFET P-CH 40V 160MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 160mA (Tj)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-236AB (SOT23)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
товару немає в наявності
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TP2424N8-G TP2424N8-G Microchip Technology filehandler.aspx?ddocname=en570673 Description: MOSFET P-CH 240V 0.316A SOT89-3
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TP2435N8-G TP2435N8-G Microchip Technology TP2435-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005961A.pdf Description: MOSFET P-CH 350V 231MA TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 231mA (Tj)
Rds On (Max) @ Id, Vgs: 15Ohm @ 500mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+105.44 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
TP2510N8-G TP2510N8-G Microchip Technology TP2510-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005965.pdf Description: MOSFET P-CH 100V 480MA TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 480mA (Tj)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
2000+81.13 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
TP2522N8-G TP2522N8-G Microchip Technology filehandler.aspx?ddocname=en570678 Description: MOSFET P-CH 220V 0.26A SOT89-3
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TP2540N3-G-P002 TP2540N3-G-P002 Microchip Technology filehandler.aspx?ddocname=en570680 Description: MOSFET P-CH 400V 0.086A TO92-3
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TP2540N8-G TP2540N8-G Microchip Technology TP2540-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20006371A.pdf Description: MOSFET P-CH 400V 125MA TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 125mA (Tj)
Rds On (Max) @ Id, Vgs: 25Ohm @ 100mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
на замовлення 28000 шт:
термін постачання 21-31 дні (днів)
2000+116.83 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
TP5322N8-G TP5322N8-G Microchip Technology filehandler.aspx?ddocname=en570683 Description: MOSFET P-CH 220V 0.26A SOT89-3
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TP5335K1-G TP5335K1-G Microchip Technology TP5335-Data-Sheet-20005704D.pdf Description: MOSFET P-CH 350V 85MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 85mA (Tj)
Rds On (Max) @ Id, Vgs: 30Ohm @ 200mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-236AB (SOT23)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+34.71 грн
Мінімальне замовлення: 3000
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VN0104N3-G-P013 VN0104N3-G-P013 Microchip Technology VN0104-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005975A.pdf Description: MOSFET N-CH 40V 350MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
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VN0106N3-G-P003 VN0106N3-G-P003 Microchip Technology VN0106%20C081913.pdf Description: MOSFET N-CH 60V 350MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
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VN0606L-G-P003 VN0606L-G-P003 Microchip Technology VN0606%20B081913.pdf Description: MOSFET N-CH 60V 330MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330mA (Tj)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
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VN10KN3-G-P003 VN10KN3-G-P003 Microchip Technology VN10K-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005983A.pdf Description: MOSFET N-CH 60V 310MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Tj)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
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VN10KN3-G-P013 VN10KN3-G-P013 Microchip Technology VN10K-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005983A.pdf Description: MOSFET N-CH 60V 310MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Tj)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
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PIC32MX270F256BT-50I/SS PIC32MX1XX2XX%20283644-PIN_Datasheet_DS60001168L.pdf
PIC32MX270F256BT-50I/SS
Виробник: Microchip Technology
Description: IC MCU 32BIT 256KB FLASH 28SSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 50MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® M4K™
Data Converters: A/D 9x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.3V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 19
DigiKey Programmable: Not Verified
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PIC32MX270F256BT-I/ML PIC32MX1XX2XX%20283644-PIN_Datasheet_DS60001168L.pdf
PIC32MX270F256BT-I/ML
Виробник: Microchip Technology
Description: IC MCU 32BIT 256KB FLASH 28QFN
Packaging: Tape & Reel (TR)
Package / Case: 28-VQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® M4K™
Data Converters: A/D 9x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.3V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 28-QFN (6x6)
Number of I/O: 19
DigiKey Programmable: Not Verified
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PIC32MX270F256BT-I/SO PIC32MX1XX2XX%20283644-PIN_Datasheet_DS60001168L.pdf
PIC32MX270F256BT-I/SO
Виробник: Microchip Technology
Description: IC MCU 32BIT 256KB FLASH 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® M4K™
Data Converters: A/D 9x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.3V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 28-SOIC
Number of I/O: 19
DigiKey Programmable: Not Verified
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PIC32MX270F256BT-I/SS PIC32MX1XX2XX%20283644-PIN_Datasheet_DS60001168L.pdf
PIC32MX270F256BT-I/SS
Виробник: Microchip Technology
Description: IC MCU 32BIT 256KB FLASH 28SSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® M4K™
Data Converters: A/D 9x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.3V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 19
DigiKey Programmable: Not Verified
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PIC32MX270F256BT-V/ML PIC32MX1XX2XX%20283644-PIN_Datasheet_DS60001168L.pdf
PIC32MX270F256BT-V/ML
Виробник: Microchip Technology
Description: IC MCU 32BIT 256KB FLASH 28QFN
Packaging: Tape & Reel (TR)
Package / Case: 28-VQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® M4K™
Data Converters: A/D 9x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.3V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 28-QFN (6x6)
Grade: Automotive
Number of I/O: 19
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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PIC32MX270F256BT-V/SO PIC32MX1XX2XX%20283644-PIN_Datasheet_DS60001168L.pdf
PIC32MX270F256BT-V/SO
Виробник: Microchip Technology
Description: IC MCU 32BIT 256KB FLASH 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® M4K™
Data Converters: A/D 9x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.3V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 28-SOIC
Number of I/O: 19
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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PIC32MX270F256BT-V/SS PIC32MX1XX2XX%20283644-PIN_Datasheet_DS60001168L.pdf
PIC32MX270F256BT-V/SS
Виробник: Microchip Technology
Description: IC MCU 32BIT 256KB FLASH 28SSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® M4K™
Data Converters: A/D 9x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.3V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 19
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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PIC32MX270F256DT-50I/ML filehandler.aspx?ddocname=en556030
PIC32MX270F256DT-50I/ML
Виробник: Microchip Technology
Description: IC MCU 32BIT 256KB FLASH 44QFN
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PIC32MX270F256DT-50I/PT filehandler.aspx?ddocname=en556030
PIC32MX270F256DT-50I/PT
Виробник: Microchip Technology
Description: IC MCU 32BIT 256KB FLASH 44TQFP
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PIC32MX270F256DT-50I/TL filehandler.aspx?ddocname=en556030
PIC32MX270F256DT-50I/TL
Виробник: Microchip Technology
Description: IC MCU 32BIT 256KB FLASH 44VTLA
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PS10NG-G-M905 PS10%20C080613.pdf
PS10NG-G-M905
Виробник: Microchip Technology
Description: IC PWM CONTROLLER 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: -90V ~ -10V
Applications: Power Supply Sequencer
Supplier Device Package: 14-SOIC
Current - Supply: 400 µA
DigiKey Programmable: Not Verified
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PS30MG-G ps30.pdf
PS30MG-G
Виробник: Microchip Technology
Description: IC LED DRIVER OFFL 10MSOP
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SR036SG-G SR036.pdf
SR036SG-G
Виробник: Microchip Technology
Description: IC OFFLINE SW INDUCTORLS 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C (TA)
Internal Switch(s): No
Output Isolation: Non-Isolated
Topology: Inductorless
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Power (Watts): 1 W
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SR037SG-G SR037.pdf
SR037SG-G
Виробник: Microchip Technology
Description: IC OFFLINE SW INDUCTORLS 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C (TA)
Internal Switch(s): No
Output Isolation: Non-Isolated
Topology: Inductorless
Supplier Device Package: 8-SOIC-EP
Part Status: Obsolete
Power (Watts): 1 W
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SR086SG-G 20005544A.pdf
SR086SG-G
Виробник: Microchip Technology
Description: IC OFFLINE SW INDUCTORLS 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): No
Output Isolation: Non-Isolated
Topology: Inductorless
Supplier Device Package: 8-SOIC-EP
Control Features: EN
на замовлення 3300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3300+90.84 грн
Мінімальне замовлення: 3300
В кошику  од. на суму  грн.
SR087SG-G 20005544A.pdf
SR087SG-G
Виробник: Microchip Technology
Description: IC OFFLINE SW INDUCTORLS 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): No
Output Isolation: Non-Isolated
Topology: Inductorless
Supplier Device Package: 8-SOIC-EP
Control Features: EN
на замовлення 3300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3300+82.40 грн
Мінімальне замовлення: 3300
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SR10LG-G SR10%20B080613.pdf
SR10LG-G
Виробник: Microchip Technology
Description: IC OFFLINE SWITCH SHUNT 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 50Hz ~ 60Hz
Internal Switch(s): Yes
Output Isolation: Non-Isolated
Topology: Shunt
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting
Part Status: Active
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3300+37.65 грн
Мінімальне замовлення: 3300
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TC1550TG-G tc1550.pdf
TC1550TG-G
Виробник: Microchip Technology
Description: MOSFET N/P-CH 500V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 25V, 70pF @ 25V
Rds On (Max) @ Id, Vgs: 60Ohm @ 50mA, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 3300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3300+433.38 грн
Мінімальне замовлення: 3300
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TC2320TG-G TC2320-N-Channel-and-P-Channel-Enhancement-Mode-Dual-MOSFET-Data-Sheet-20005708B.pdf
TC2320TG-G
Виробник: Microchip Technology
Description: MOSFET N/P-CH 200V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V, 125pF @ 25V
Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 8-SOIC
Part Status: Active
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TC6215TG-G tc6215.pdf
TC6215TG-G
Виробник: Microchip Technology
Description: MOSFET N/P-CH 150V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V
Rds On (Max) @ Id, Vgs: 4Ohm @ 2A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 8-SOIC
Part Status: Active
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TC6320K6-G 20005697A.pdf
TC6320K6-G
Виробник: Microchip Technology
Description: MOSFET N/P-CH 200V 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V, 125pF @ 25V
Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 8-DFN (4x4)
Part Status: Active
на замовлення 3300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3300+103.50 грн
Мінімальне замовлення: 3300
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TC6320TG-G TC6320-N-Channel-and-P-Channel-Enhancement-Mode-MOSFET-Pair-Data-Sheet-DS20005697.pdf
TC6320TG-G
Виробник: Microchip Technology
Description: MOSFET N/P-CH 200V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V, 125pF @ 25V
Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 3300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3300+96.09 грн
Мінімальне замовлення: 3300
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TC8020K6-G-M937 tc8020.pdf
TC8020K6-G-M937
Виробник: Microchip Technology
Description: MOSFET 6N/6P-CH 200V 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 6 N and 6 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 8Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 56-QFN (8x8)
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TC8220K6-G TC8220B080713.pdf
TC8220K6-G
Виробник: Microchip Technology
Description: MOSFET 2N/2P-CH 200V 12DFN
Packaging: Tape & Reel (TR)
Package / Case: 12-VFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 25V, 75pF @ 25V
Rds On (Max) @ Id, Vgs: 6Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 12-DFN (4x4)
Part Status: Active
на замовлення 3300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3300+137.80 грн
Мінімальне замовлення: 3300
В кошику  од. на суму  грн.
TN0104N3-G-P003 TN0104-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005930A.pdf
TN0104N3-G-P003
Виробник: Microchip Technology
Description: MOSFET N-CH 40V 450MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 500µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 20 V
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TN0104N3-G-P014 TN0104-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005930A.pdf
TN0104N3-G-P014
Виробник: Microchip Technology
Description: MOSFET N-CH 40V 450MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 500µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 20 V
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TN0104N8-G TN0104-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005930A.pdf
TN0104N8-G
Виробник: Microchip Technology
Description: MOSFET N-CH 40V 630MA TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 630mA (Tj)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 10V
Power Dissipation (Max): 1.6W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 500µA
Supplier Device Package: TO-243AA (SOT-89)
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 20 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+76.90 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
TN0106N3-G-P013 TN0106-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005932A.pdf
TN0106N3-G-P013
Виробник: Microchip Technology
Description: MOSFET N-CH 60V 350MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 500µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
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TN0604N3-G-P005 TN0604-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005934A.pdf
TN0604N3-G-P005
Виробник: Microchip Technology
Description: MOSFET N-CH 40V 700MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Tj)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.5A, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 20 V
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TN0604N3-G-P013 TN0604-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005934A.pdf
TN0604N3-G-P013
Виробник: Microchip Technology
Description: MOSFET N-CH 40V 700MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Tj)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.5A, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 20 V
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TN0610N3-G-P003 TN0610-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20006418A.pdf
TN0610N3-G-P003
Виробник: Microchip Technology
Description: MOSFET N-CH 100V 500MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Tj)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
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TN0610N3-G-P013 TN0610-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20006418A.pdf
TN0610N3-G-P013
Виробник: Microchip Technology
Description: MOSFET N-CH 100V 500MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Tj)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
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TN0620N3-G-P014 TN0620-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005936A.pdf
TN0620N3-G-P014
Виробник: Microchip Technology
Description: MOSFET N-CH 200V 250MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Tj)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
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TN2106K1-G TN2106-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005942A.pdf
TN2106K1-G
Виробник: Microchip Technology
Description: MOSFET N-CH 60V 280MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280mA (Tj)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-236AB (SOT23)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+37.46 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
TN2124K1-G TN2124-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005698A.pdf
TN2124K1-G
Виробник: Microchip Technology
Description: MOSFET N-CH 240V 134MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 134mA (Tj)
Rds On (Max) @ Id, Vgs: 15Ohm @ 120mA, 4.5V
Power Dissipation (Max): 360mW (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-236AB (SOT23)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
TN2501N8-G filehandler.aspx?ddocname=en570663
TN2501N8-G
Виробник: Microchip Technology
Description: MOSFET N-CH 18V 400MA SOT89-3
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TN2510N8-G TN2510-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005950A.pdf
TN2510N8-G
Виробник: Microchip Technology
Description: MOSFET N-CH 100V 730MA TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 730mA (Tj)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+72.45 грн
Мінімальне замовлення: 2000
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TN2524N8-G TN2524-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005952A.pdf
TN2524N8-G
Виробник: Microchip Technology
Description: MOSFET N-CH 240V 360MA TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Tj)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 1.6W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
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TN2540N3-G-P002 TN2540-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005954A.pdf
TN2540N3-G-P002
Виробник: Microchip Technology
Description: MOSFET N-CH 400V 175MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175mA (Tj)
Rds On (Max) @ Id, Vgs: 12Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
товару немає в наявності
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TN2540N8-G TN2540-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005954A.pdf
TN2540N8-G
Виробник: Microchip Technology
Description: MOSFET N-CH 400V 260MA TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260mA (Tj)
Rds On (Max) @ Id, Vgs: 12Ohm @ 500mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+90.21 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
TN5325K1-G 20005709A.pdf
TN5325K1-G
Виробник: Microchip Technology
Description: MOSFET N-CH 250V 150MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-236AB (SOT23)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+38.99 грн
Мінімальне замовлення: 3000
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TN5325N3-G-P002 20005709A.pdf
TN5325N3-G-P002
Виробник: Microchip Technology
Description: MOSFET N-CH 250V 215MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 215mA (Ta)
Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V
товару немає в наявності
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TN5325N8-G 20005709A.pdf
TN5325N8-G
Виробник: Microchip Technology
Description: MOSFET N-CH 250V 316MA TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 316mA (Tj)
Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+45.25 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
TP0606N3-G-P002 TP0606.pdf
TP0606N3-G-P002
Виробник: Microchip Technology
Description: MOSFET P-CH 60V 320MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Tj)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
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TP0606N3-G-P003 TP0606.pdf
TP0606N3-G-P003
Виробник: Microchip Technology
Description: MOSFET P-CH 60V 320MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Tj)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
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TP0610T-G TP0610T-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005701B.pdf
TP0610T-G
Виробник: Microchip Technology
Description: MOSFET P-CH 60V 120MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Tj)
Rds On (Max) @ Id, Vgs: 10Ohm @ 200mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-236AB (SOT23)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+50.09 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
TP2104K1-G TP2104-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005958A.pdf
TP2104K1-G
Виробник: Microchip Technology
Description: MOSFET P-CH 40V 160MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 160mA (Tj)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-236AB (SOT23)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
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TP2424N8-G filehandler.aspx?ddocname=en570673
TP2424N8-G
Виробник: Microchip Technology
Description: MOSFET P-CH 240V 0.316A SOT89-3
товару немає в наявності
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TP2435N8-G TP2435-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005961A.pdf
TP2435N8-G
Виробник: Microchip Technology
Description: MOSFET P-CH 350V 231MA TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 231mA (Tj)
Rds On (Max) @ Id, Vgs: 15Ohm @ 500mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+105.44 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
TP2510N8-G TP2510-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005965.pdf
TP2510N8-G
Виробник: Microchip Technology
Description: MOSFET P-CH 100V 480MA TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 480mA (Tj)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+81.13 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
TP2522N8-G filehandler.aspx?ddocname=en570678
TP2522N8-G
Виробник: Microchip Technology
Description: MOSFET P-CH 220V 0.26A SOT89-3
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TP2540N3-G-P002 filehandler.aspx?ddocname=en570680
TP2540N3-G-P002
Виробник: Microchip Technology
Description: MOSFET P-CH 400V 0.086A TO92-3
товару немає в наявності
В кошику  од. на суму  грн.
TP2540N8-G TP2540-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20006371A.pdf
TP2540N8-G
Виробник: Microchip Technology
Description: MOSFET P-CH 400V 125MA TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 125mA (Tj)
Rds On (Max) @ Id, Vgs: 25Ohm @ 100mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
на замовлення 28000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+116.83 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
TP5322N8-G filehandler.aspx?ddocname=en570683
TP5322N8-G
Виробник: Microchip Technology
Description: MOSFET P-CH 220V 0.26A SOT89-3
товару немає в наявності
В кошику  од. на суму  грн.
TP5335K1-G TP5335-Data-Sheet-20005704D.pdf
TP5335K1-G
Виробник: Microchip Technology
Description: MOSFET P-CH 350V 85MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 85mA (Tj)
Rds On (Max) @ Id, Vgs: 30Ohm @ 200mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-236AB (SOT23)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+34.71 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
VN0104N3-G-P013 VN0104-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005975A.pdf
VN0104N3-G-P013
Виробник: Microchip Technology
Description: MOSFET N-CH 40V 350MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
товару немає в наявності
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VN0106N3-G-P003 VN0106%20C081913.pdf
VN0106N3-G-P003
Виробник: Microchip Technology
Description: MOSFET N-CH 60V 350MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
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VN0606L-G-P003 VN0606%20B081913.pdf
VN0606L-G-P003
Виробник: Microchip Technology
Description: MOSFET N-CH 60V 330MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330mA (Tj)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
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VN10KN3-G-P003 VN10K-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005983A.pdf
VN10KN3-G-P003
Виробник: Microchip Technology
Description: MOSFET N-CH 60V 310MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Tj)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
товару немає в наявності
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VN10KN3-G-P013 VN10K-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005983A.pdf
VN10KN3-G-P013
Виробник: Microchip Technology
Description: MOSFET N-CH 60V 310MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Tj)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
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