Продукція > NEXPERIA USA INC. > Всі товари виробника NEXPERIA USA INC. (27337) > Сторінка 139 з 456
Фото | Назва | Виробник | Інформація |
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PDTC144ETVL | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 50V TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms |
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PESD24VF1BLYL | Nexperia USA Inc. |
Description: TVS DIODE 24VWM 17VC DFN1006-2 Packaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TA) Capacitance @ Frequency: 0.3pF @ 1MHz Current - Peak Pulse (10/1000µs): 1A (8/20µs) Voltage - Reverse Standoff (Typ): 24V (Max) Supplier Device Package: DFN1006-2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 24.5V Voltage - Clamping (Max) @ Ipp: 17V Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 200000 шт: термін постачання 21-31 дні (днів) |
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PMDXB950UPEZ | Nexperia USA Inc. |
Description: MOSFET 2P-CH 20V 0.5A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 265mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: DFN1010B-6 Part Status: Active |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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PMEG2002AESF,315 | Nexperia USA Inc. |
Description: DIODE SCHOTT 20V 200MA DSN0603-2 Packaging: Tape & Reel (TR) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1.9 ns Technology: Schottky Capacitance @ Vr, F: 25pF @ 1V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DSN0603-2 Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 420 mV @ 200 mA Current - Reverse Leakage @ Vr: 45 µA @ 20 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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PMEG45A10EPDAZ | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 45V 10A CFP15 Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 21 ns Technology: Schottky Capacitance @ Vr, F: 715pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: CFP15 Operating Temperature - Junction: 150°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 540 mV @ 10 A Current - Reverse Leakage @ Vr: 500 µA @ 45 V |
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PMEG45U10EPDZ | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 45V 10A CFP15 Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 34 ns Technology: Schottky Capacitance @ Vr, F: 1170pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: CFP15 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 10 A Current - Reverse Leakage @ Vr: 600 µA @ 45 V |
на замовлення 22500 шт: термін постачання 21-31 дні (днів) |
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PMPB85ENEAX | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 3A DFN2020MD-6 Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 3A, 10V Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: DFN2020MD-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 30 V |
на замовлення 33000 шт: термін постачання 21-31 дні (днів) |
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PMPB95ENEAX | Nexperia USA Inc. |
Description: MOSFET N-CH 80V 2.8A DFN2020MD-6 Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 105mOhm @ 2.8A, 10V Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: DFN2020MD-6 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 504 pF @ 40 V Qualification: AEC-Q100 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PMXB56ENZ | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 3.2A DFN1010D-3 Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 3.2A, 10V Power Dissipation (Max): 400mW (Ta), 8.33W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DFN1010D-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 15 V |
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PSMN0R9-30YLDX | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 300A LFPAK56 Packaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 0.87mOhm @ 25A, 10V Power Dissipation (Max): 291W Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK56; Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7668 pF @ 15 V |
на замовлення 19500 шт: термін постачання 21-31 дні (днів) |
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PSMN1R0-30YLDX | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 100A LFPAK56 Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.02mOhm @ 25A, 10V Power Dissipation (Max): 238W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 2mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 121.35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8598 pF @ 15 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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PSMN1R2-30YLDX | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 100A LFPAK56 Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.24mOhm @ 25A, 10V Power Dissipation (Max): 194W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4616 pF @ 15 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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PSMN1R4-30YLDX | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 100A LFPAK56 Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.42mOhm @ 25A, 10V Power Dissipation (Max): 166W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 54.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 15 V |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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PSMN2R1-60CSJ | Nexperia USA Inc. |
Description: MOSFET N-CH 60V DPAK Packaging: Tape & Reel (TR) Part Status: Active |
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PTVS10VU1UPAZ | Nexperia USA Inc. | Description: TVS DIODE 10V 17V DFN2020-3 |
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PTVS18VU1UPAZ | Nexperia USA Inc. |
Description: TVS DIODE 18VWM 29.2VC 3HUSON Packaging: Tape & Reel (TR) Package / Case: 3-PowerUDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TA) Current - Peak Pulse (10/1000µs): 10.3A Voltage - Reverse Standoff (Typ): 18V (Max) Supplier Device Package: 3-HUSON (2x2) Unidirectional Channels: 1 Voltage - Breakdown (Min): 20V Voltage - Clamping (Max) @ Ipp: 29.2V Power - Peak Pulse: 300W Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PTVS26VU1UPAZ | Nexperia USA Inc. |
Description: TVS DIODE 26VWM 42.1VC 3HUSON Packaging: Tape & Reel (TR) Package / Case: 3-PowerUDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TA) Current - Peak Pulse (10/1000µs): 7A Voltage - Reverse Standoff (Typ): 26V (Max) Supplier Device Package: 3-HUSON (2x2) Unidirectional Channels: 1 Voltage - Breakdown (Min): 28.9V Voltage - Clamping (Max) @ Ipp: 42.1V Power - Peak Pulse: 300W Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PTVS7V5U1UPAZ | Nexperia USA Inc. |
Description: TVS DIODE 7.5VWM 12.9VC 3HUSON Packaging: Tape & Reel (TR) Package / Case: 3-PowerUDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TA) Current - Peak Pulse (10/1000µs): 23.3A Voltage - Reverse Standoff (Typ): 7.5V (Max) Supplier Device Package: 3-HUSON (2x2) Unidirectional Channels: 1 Voltage - Breakdown (Min): 8.33V Voltage - Clamping (Max) @ Ipp: 12.9V Power - Peak Pulse: 300W Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
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PUSB2X4DH | Nexperia USA Inc. |
Description: TVS DIODE 4.3VC 6TSOP Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -40°C ~ 85°C (TA) Applications: General Purpose Capacitance @ Frequency: 0.7pF @ 1MHz Current - Peak Pulse (10/1000µs): 4.8A (8/20µs) Supplier Device Package: 6-TSOP Unidirectional Channels: 4 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 4.3V (Typ) Power Line Protection: Yes Part Status: Obsolete |
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PUSB2X4YH | Nexperia USA Inc. |
Description: TVS DIODE 3.8VC 6TSSOP Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -40°C ~ 85°C (TA) Applications: General Purpose Capacitance @ Frequency: 0.7pF @ 1MHz Current - Peak Pulse (10/1000µs): 4.5A (8/20µs) Supplier Device Package: 6-TSSOP Unidirectional Channels: 4 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 3.8V (Typ) Power Line Protection: Yes Part Status: Obsolete |
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PTVS7V5U1UPAZ | Nexperia USA Inc. |
Description: TVS DIODE 7.5VWM 12.9VC 3HUSON Packaging: Cut Tape (CT) Package / Case: 3-PowerUDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TA) Current - Peak Pulse (10/1000µs): 23.3A Voltage - Reverse Standoff (Typ): 7.5V (Max) Supplier Device Package: 3-HUSON (2x2) Unidirectional Channels: 1 Voltage - Breakdown (Min): 8.33V Voltage - Clamping (Max) @ Ipp: 12.9V Power - Peak Pulse: 300W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1625 шт: термін постачання 21-31 дні (днів) |
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PTVS10VU1UPAZ | Nexperia USA Inc. | Description: TVS DIODE 10V 17V DFN2020-3 |
на замовлення 737 шт: термін постачання 21-31 дні (днів) |
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PTVS18VU1UPAZ | Nexperia USA Inc. |
Description: TVS DIODE 18VWM 29.2VC 3HUSON Packaging: Cut Tape (CT) Package / Case: 3-PowerUDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TA) Current - Peak Pulse (10/1000µs): 10.3A Voltage - Reverse Standoff (Typ): 18V (Max) Supplier Device Package: 3-HUSON (2x2) Unidirectional Channels: 1 Voltage - Breakdown (Min): 20V Voltage - Clamping (Max) @ Ipp: 29.2V Power - Peak Pulse: 300W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 8682 шт: термін постачання 21-31 дні (днів) |
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PMEG45A10EPDAZ | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 45V 10A CFP15 Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 21 ns Technology: Schottky Capacitance @ Vr, F: 715pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: CFP15 Operating Temperature - Junction: 150°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 540 mV @ 10 A Current - Reverse Leakage @ Vr: 500 µA @ 45 V |
на замовлення 444 шт: термін постачання 21-31 дні (днів) |
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PMEG45U10EPDZ | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 45V 10A CFP15 Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 34 ns Technology: Schottky Capacitance @ Vr, F: 1170pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: CFP15 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 10 A Current - Reverse Leakage @ Vr: 600 µA @ 45 V |
на замовлення 22521 шт: термін постачання 21-31 дні (днів) |
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NPIC6C596ADJ | Nexperia USA Inc. |
Description: IC SHIFT REGISTER 8BIT 16SOIC Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Output Type: Open Drain Mounting Type: Surface Mount Number of Elements: 1 Function: Serial to Parallel, Serial Logic Type: Shift Register Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.3V ~ 5.5V Supplier Device Package: 16-SO Part Status: Obsolete Number of Bits per Element: 8 |
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74HCT20D-Q100,118 | Nexperia USA Inc. |
Description: IC GATE NAND 2CH 4-INP 14SO Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 4mA, 5.2mA Number of Inputs: 4 Supplier Device Package: 14-SO Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 28ns @ 4.5V, 50pF Part Status: Obsolete Number of Circuits: 2 Current - Quiescent (Max): 2 µA |
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BUK7K18-40EX | Nexperia USA Inc. |
Description: MOSFET 2N-CH 40V 24.2A LFPAK56D Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 38W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 24.2A Input Capacitance (Ciss) (Max) @ Vds: 808pF @ 25V Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56D Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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BUK7Y19-100EX | Nexperia USA Inc. |
Description: MOSFET N-CH 100V LFPAK56-SO8 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Power Dissipation (Max): 169W (Tc) Supplier Device Package: LFPAK56, Power-SO8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Grade: Automotive Qualification: AEC-Q100 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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BUK9Y113-100E,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 100V 12A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 5A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6937 шт: термін постачання 21-31 дні (днів) |
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BUK9Y19-100E,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 100V 56A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5085 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 16480 шт: термін постачання 21-31 дні (днів) |
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PSMN0R9-30YLDX | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 300A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 0.87mOhm @ 25A, 10V Power Dissipation (Max): 291W Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK56; Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7668 pF @ 15 V |
на замовлення 20083 шт: термін постачання 21-31 дні (днів) |
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PSMN1R0-30YLDX | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 100A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.02mOhm @ 25A, 10V Power Dissipation (Max): 238W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 2mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 121.35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8598 pF @ 15 V |
на замовлення 13691 шт: термін постачання 21-31 дні (днів) |
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PSMN1R0-40YLDX | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 280A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 280A (Ta) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 25A, 10V Power Dissipation (Max): 198W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8845 pF @ 20 V |
на замовлення 6284 шт: термін постачання 21-31 дні (днів) |
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PSMN1R0-40YLDX | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 280A LFPAK56 Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 280A (Ta) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 25A, 10V Power Dissipation (Max): 198W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8845 pF @ 20 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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PSMN1R4-30YLDX | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 100A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.42mOhm @ 25A, 10V Power Dissipation (Max): 166W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 54.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 15 V |
на замовлення 19042 шт: термін постачання 21-31 дні (днів) |
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PSMN1R4-40YLDX | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 100A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V Power Dissipation (Max): 238W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6661 pF @ 20 V |
на замовлення 6264 шт: термін постачання 21-31 дні (днів) |
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PSMN1R4-40YLDX | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 100A LFPAK56 Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V Power Dissipation (Max): 238W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6661 pF @ 20 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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2N7002P,235 | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 360MA TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 360mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-236AB Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 10 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1146612 шт: термін постачання 21-31 дні (днів) |
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BAT54W,135 | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 30V 200MA SOT323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 10pF @ 1V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-323 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 54116 шт: термін постачання 21-31 дні (днів) |
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BAV23,235 | Nexperia USA Inc. |
Description: DIODE ARR GP 200V 225MA SOT143B Packaging: Cut Tape (CT) Package / Case: TO-253-4, TO-253AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 225mA (DC) Supplier Device Package: SOT-143B Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V |
на замовлення 27741 шт: термін постачання 21-31 дні (днів) |
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BAV70,235 | Nexperia USA Inc. |
Description: DIODE ARR GP 100V 215MA TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 215mA (DC) Supplier Device Package: TO-236AB Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
на замовлення 112953 шт: термін постачання 21-31 дні (днів) |
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BAV70S,135 | Nexperia USA Inc. |
Description: DIODE ARRAY GP 100V 250MA 6TSSOP Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 2 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 250mA (DC) Supplier Device Package: 6-TSSOP Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
на замовлення 50211 шт: термін постачання 21-31 дні (днів) |
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BAW56,235 | Nexperia USA Inc. |
Description: DIODE ARRAY GP 90V 215MA TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 215mA (DC) Supplier Device Package: TO-236AB Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 261492 шт: термін постачання 21-31 дні (днів) |
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BC807-25,235 | Nexperia USA Inc. |
Description: TRANS PNP 45V 0.5A TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 80MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW Grade: Automotive Qualification: AEC-Q101 |
на замовлення 170987 шт: термін постачання 21-31 дні (днів) |
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BC807-40,235 | Nexperia USA Inc. |
Description: TRANS PNP 45V 0.5A TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 80MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW Grade: Automotive Qualification: AEC-Q101 |
на замовлення 421095 шт: термін постачання 21-31 дні (днів) |
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BC846B,235 | Nexperia USA Inc. |
Description: TRANS NPN 65V 0.1A TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 250 mW |
на замовлення 583916 шт: термін постачання 21-31 дні (днів) |
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BC847BPN,135 | Nexperia USA Inc. |
Description: TRANS NPN/PNP 45V 0.1A 6TSSOP Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: 150°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: 6-TSSOP Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 22616 шт: термін постачання 21-31 дні (днів) |
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BC847BS,135 | Nexperia USA Inc. |
Description: TRANS 2NPN 45V 0.1A 6TSSOP Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 150°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: 6-TSSOP Part Status: Active |
на замовлення 167065 шт: термін постачання 21-31 дні (днів) |
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BSH103,235 | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 850MA TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 850mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V Power Dissipation (Max): 540mW (Ta) Vgs(th) (Max) @ Id: 400mV @ 1mA (Min) Supplier Device Package: TO-236AB Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 2.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 83 pF @ 24 V |
на замовлення 43995 шт: термін постачання 21-31 дні (днів) |
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BZV55-C5V6,135 | Nexperia USA Inc. |
Description: DIODE ZENER 5.6V 500MW LLDS Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: LLDS; MiniMelf Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 1 µA @ 2 V |
на замовлення 18382 шт: термін постачання 21-31 дні (днів) |
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BZX84-C4V7,235 | Nexperia USA Inc. |
Description: DIODE ZENER 4.7V 250MW TO236AB Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 4.7 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: TO-236AB Part Status: Active Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 3 µA @ 2 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 32067 шт: термін постачання 21-31 дні (днів) |
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PMBT3906,235 | Nexperia USA Inc. |
Description: TRANS PNP 40V 0.2A TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 250MHz Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 250 mW Qualification: AEC-Q101 |
на замовлення 81744 шт: термін постачання 21-31 дні (днів) |
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PMBT4401,235 | Nexperia USA Inc. |
Description: TRANS NPN 40V 0.6A TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V Frequency - Transition: 250MHz Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 250 mW Qualification: AEC-Q100 |
на замовлення 35583 шт: термін постачання 21-31 дні (днів) |
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74AHC1G17GVH | Nexperia USA Inc. |
Description: IC BUFFER NON-INVERT 5.5V SC74A Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2V ~ 5.5V Input Type: Schmitt Trigger Number of Bits per Element: 1 Current - Output High, Low: 8mA, 8mA Supplier Device Package: SC-74A Part Status: Active |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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74AHC1G17GWH | Nexperia USA Inc. |
Description: IC BUF NON-INVERT 5.5V 5TSSOP Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2V ~ 5.5V Input Type: Schmitt Trigger Number of Bits per Element: 1 Current - Output High, Low: 8mA, 8mA Supplier Device Package: 5-TSSOP Part Status: Active |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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74AHC30BQ-Q100X | Nexperia USA Inc. | Description: IC GATE NAND 1CH 8-INP 14DHVQFN |
товар відсутній |
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74AHCT1G17GVH | Nexperia USA Inc. |
Description: IC BUFFER NON-INVERT 5.5V SC74A Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Input Type: Schmitt Trigger Number of Bits per Element: 1 Current - Output High, Low: 8mA, 8mA Supplier Device Package: SC-74A |
товар відсутній |
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74AHCT1G17GWH | Nexperia USA Inc. |
Description: IC BUF NON-INVERT 5.5V 5TSSOP Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Input Type: Schmitt Trigger Number of Bits per Element: 1 Current - Output High, Low: 8mA, 8mA Supplier Device Package: 5-TSSOP |
на замовлення 14000 шт: термін постачання 21-31 дні (днів) |
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74ALVC00BQ-Q100X | Nexperia USA Inc. | Description: IC GATE NAND 4CH 2-INP 14DHVQFN |
товар відсутній |
PDTC144ETVL |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS NPN 50V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
товар відсутній
PESD24VF1BLYL |
Виробник: Nexperia USA Inc.
Description: TVS DIODE 24VWM 17VC DFN1006-2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.5V
Voltage - Clamping (Max) @ Ipp: 17V
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 24VWM 17VC DFN1006-2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.5V
Voltage - Clamping (Max) @ Ipp: 17V
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 200000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10000+ | 3.98 грн |
30000+ | 3.76 грн |
50000+ | 3.11 грн |
PMDXB950UPEZ |
Виробник: Nexperia USA Inc.
Description: MOSFET 2P-CH 20V 0.5A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 265mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1010B-6
Part Status: Active
Description: MOSFET 2P-CH 20V 0.5A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 265mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1010B-6
Part Status: Active
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 6.02 грн |
PMEG2002AESF,315 |
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTT 20V 200MA DSN0603-2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.9 ns
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DSN0603-2
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 200 mA
Current - Reverse Leakage @ Vr: 45 µA @ 20 V
Description: DIODE SCHOTT 20V 200MA DSN0603-2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.9 ns
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DSN0603-2
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 200 mA
Current - Reverse Leakage @ Vr: 45 µA @ 20 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9000+ | 3.28 грн |
PMEG45A10EPDAZ |
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 45V 10A CFP15
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 21 ns
Technology: Schottky
Capacitance @ Vr, F: 715pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: CFP15
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Description: DIODE SCHOTTKY 45V 10A CFP15
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 21 ns
Technology: Schottky
Capacitance @ Vr, F: 715pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: CFP15
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
товар відсутній
PMEG45U10EPDZ |
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 45V 10A CFP15
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 34 ns
Technology: Schottky
Capacitance @ Vr, F: 1170pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: CFP15
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 45 V
Description: DIODE SCHOTTKY 45V 10A CFP15
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 34 ns
Technology: Schottky
Capacitance @ Vr, F: 1170pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: CFP15
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 45 V
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1500+ | 27.09 грн |
3000+ | 23.75 грн |
PMPB85ENEAX |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 3A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 3A, 10V
Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 30 V
Description: MOSFET N-CH 60V 3A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 3A, 10V
Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 30 V
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 9.36 грн |
6000+ | 8.47 грн |
15000+ | 7.92 грн |
30000+ | 6.82 грн |
PMPB95ENEAX |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 80V 2.8A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.8A, 10V
Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 504 pF @ 40 V
Qualification: AEC-Q100
Description: MOSFET N-CH 80V 2.8A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.8A, 10V
Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 504 pF @ 40 V
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 9.8 грн |
PMXB56ENZ |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 3.2A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.2A, 10V
Power Dissipation (Max): 400mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DFN1010D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 15 V
Description: MOSFET N-CH 30V 3.2A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.2A, 10V
Power Dissipation (Max): 400mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DFN1010D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 15 V
товар відсутній
PSMN0R9-30YLDX |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 300A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.87mOhm @ 25A, 10V
Power Dissipation (Max): 291W
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56; Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7668 pF @ 15 V
Description: MOSFET N-CH 30V 300A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.87mOhm @ 25A, 10V
Power Dissipation (Max): 291W
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56; Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7668 pF @ 15 V
на замовлення 19500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1500+ | 79.83 грн |
3000+ | 73.03 грн |
7500+ | 70.28 грн |
PSMN1R0-30YLDX |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.02mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 2mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 121.35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8598 pF @ 15 V
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.02mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 2mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 121.35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8598 pF @ 15 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1500+ | 61.43 грн |
3000+ | 56.19 грн |
7500+ | 54.08 грн |
10500+ | 49.07 грн |
PSMN1R2-30YLDX |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 25A, 10V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4616 pF @ 15 V
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 25A, 10V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4616 pF @ 15 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1500+ | 54.29 грн |
3000+ | 49.66 грн |
7500+ | 47.79 грн |
PSMN1R4-30YLDX |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.42mOhm @ 25A, 10V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 15 V
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.42mOhm @ 25A, 10V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 15 V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1500+ | 46.61 грн |
3000+ | 42.25 грн |
7500+ | 40.24 грн |
10500+ | 36.02 грн |
PSMN2R1-60CSJ |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V DPAK
Packaging: Tape & Reel (TR)
Part Status: Active
Description: MOSFET N-CH 60V DPAK
Packaging: Tape & Reel (TR)
Part Status: Active
товар відсутній
PTVS18VU1UPAZ |
Виробник: Nexperia USA Inc.
Description: TVS DIODE 18VWM 29.2VC 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: 3-HUSON (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 18VWM 29.2VC 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: 3-HUSON (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 7.8 грн |
PTVS26VU1UPAZ |
Виробник: Nexperia USA Inc.
Description: TVS DIODE 26VWM 42.1VC 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 7A
Voltage - Reverse Standoff (Typ): 26V (Max)
Supplier Device Package: 3-HUSON (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 26VWM 42.1VC 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 7A
Voltage - Reverse Standoff (Typ): 26V (Max)
Supplier Device Package: 3-HUSON (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 7.8 грн |
PTVS7V5U1UPAZ |
Виробник: Nexperia USA Inc.
Description: TVS DIODE 7.5VWM 12.9VC 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 23.3A
Voltage - Reverse Standoff (Typ): 7.5V (Max)
Supplier Device Package: 3-HUSON (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 7.5VWM 12.9VC 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 23.3A
Voltage - Reverse Standoff (Typ): 7.5V (Max)
Supplier Device Package: 3-HUSON (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товар відсутній
PUSB2X4DH |
Виробник: Nexperia USA Inc.
Description: TVS DIODE 4.3VC 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.8A (8/20µs)
Supplier Device Package: 6-TSOP
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 4.3V (Typ)
Power Line Protection: Yes
Part Status: Obsolete
Description: TVS DIODE 4.3VC 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.8A (8/20µs)
Supplier Device Package: 6-TSOP
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 4.3V (Typ)
Power Line Protection: Yes
Part Status: Obsolete
товар відсутній
PUSB2X4YH |
Виробник: Nexperia USA Inc.
Description: TVS DIODE 3.8VC 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Supplier Device Package: 6-TSSOP
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 3.8V (Typ)
Power Line Protection: Yes
Part Status: Obsolete
Description: TVS DIODE 3.8VC 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Supplier Device Package: 6-TSSOP
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 3.8V (Typ)
Power Line Protection: Yes
Part Status: Obsolete
товар відсутній
PTVS7V5U1UPAZ |
Виробник: Nexperia USA Inc.
Description: TVS DIODE 7.5VWM 12.9VC 3HUSON
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 23.3A
Voltage - Reverse Standoff (Typ): 7.5V (Max)
Supplier Device Package: 3-HUSON (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 300W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 7.5VWM 12.9VC 3HUSON
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 23.3A
Voltage - Reverse Standoff (Typ): 7.5V (Max)
Supplier Device Package: 3-HUSON (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 300W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1625 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 28.54 грн |
13+ | 21.57 грн |
100+ | 12.96 грн |
500+ | 11.26 грн |
1000+ | 7.66 грн |
PTVS10VU1UPAZ |
Виробник: Nexperia USA Inc.
Description: TVS DIODE 10V 17V DFN2020-3
Description: TVS DIODE 10V 17V DFN2020-3
на замовлення 737 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 34.25 грн |
11+ | 27 грн |
100+ | 18.4 грн |
500+ | 12.95 грн |
PTVS18VU1UPAZ |
Виробник: Nexperia USA Inc.
Description: TVS DIODE 18VWM 29.2VC 3HUSON
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: 3-HUSON (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 300W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 18VWM 29.2VC 3HUSON
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: 3-HUSON (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 300W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8682 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 28.54 грн |
13+ | 21.57 грн |
100+ | 12.96 грн |
500+ | 11.26 грн |
1000+ | 7.66 грн |
PMEG45A10EPDAZ |
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 45V 10A CFP15
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 21 ns
Technology: Schottky
Capacitance @ Vr, F: 715pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: CFP15
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Description: DIODE SCHOTTKY 45V 10A CFP15
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 21 ns
Technology: Schottky
Capacitance @ Vr, F: 715pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: CFP15
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
на замовлення 444 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 56.37 грн |
10+ | 47.34 грн |
100+ | 32.8 грн |
PMEG45U10EPDZ |
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 45V 10A CFP15
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 34 ns
Technology: Schottky
Capacitance @ Vr, F: 1170pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: CFP15
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 45 V
Description: DIODE SCHOTTKY 45V 10A CFP15
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 34 ns
Technology: Schottky
Capacitance @ Vr, F: 1170pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: CFP15
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 45 V
на замовлення 22521 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 63.5 грн |
10+ | 53.8 грн |
100+ | 41.25 грн |
500+ | 30.6 грн |
NPIC6C596ADJ |
Виробник: Nexperia USA Inc.
Description: IC SHIFT REGISTER 8BIT 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel, Serial
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 5.5V
Supplier Device Package: 16-SO
Part Status: Obsolete
Number of Bits per Element: 8
Description: IC SHIFT REGISTER 8BIT 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel, Serial
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 5.5V
Supplier Device Package: 16-SO
Part Status: Obsolete
Number of Bits per Element: 8
товар відсутній
74HCT20D-Q100,118 |
Виробник: Nexperia USA Inc.
Description: IC GATE NAND 2CH 4-INP 14SO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4mA, 5.2mA
Number of Inputs: 4
Supplier Device Package: 14-SO
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 28ns @ 4.5V, 50pF
Part Status: Obsolete
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
Description: IC GATE NAND 2CH 4-INP 14SO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4mA, 5.2mA
Number of Inputs: 4
Supplier Device Package: 14-SO
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 28ns @ 4.5V, 50pF
Part Status: Obsolete
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
товар відсутній
BUK7K18-40EX |
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 40V 24.2A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 38W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 24.2A
Input Capacitance (Ciss) (Max) @ Vds: 808pF @ 25V
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: MOSFET 2N-CH 40V 24.2A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 38W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 24.2A
Input Capacitance (Ciss) (Max) @ Vds: 808pF @ 25V
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 72.07 грн |
10+ | 56.75 грн |
100+ | 44.14 грн |
500+ | 35.11 грн |
BUK7Y19-100EX |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V LFPAK56-SO8
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Power Dissipation (Max): 169W (Tc)
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Grade: Automotive
Qualification: AEC-Q100
Description: MOSFET N-CH 100V LFPAK56-SO8
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Power Dissipation (Max): 169W (Tc)
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 80.63 грн |
10+ | 63.49 грн |
100+ | 49.39 грн |
500+ | 39.29 грн |
BUK9Y113-100E,115 |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 12A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 12A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6937 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 46.38 грн |
10+ | 38.2 грн |
100+ | 26.46 грн |
500+ | 20.75 грн |
BUK9Y19-100E,115 |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 56A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5085 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 56A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5085 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 16480 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 89.19 грн |
10+ | 70.01 грн |
100+ | 54.5 грн |
500+ | 43.35 грн |
PSMN0R9-30YLDX |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 300A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.87mOhm @ 25A, 10V
Power Dissipation (Max): 291W
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56; Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7668 pF @ 15 V
Description: MOSFET N-CH 30V 300A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.87mOhm @ 25A, 10V
Power Dissipation (Max): 291W
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56; Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7668 pF @ 15 V
на замовлення 20083 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 168.39 грн |
10+ | 134.53 грн |
100+ | 107.08 грн |
500+ | 85.02 грн |
PSMN1R0-30YLDX |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.02mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 2mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 121.35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8598 pF @ 15 V
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.02mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 2mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 121.35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8598 pF @ 15 V
на замовлення 13691 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 129.15 грн |
10+ | 103.54 грн |
100+ | 82.39 грн |
500+ | 65.42 грн |
PSMN1R0-40YLDX |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 280A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280A (Ta)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 25A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8845 pF @ 20 V
Description: MOSFET N-CH 40V 280A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280A (Ta)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 25A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8845 pF @ 20 V
на замовлення 6284 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 191.22 грн |
10+ | 152.67 грн |
100+ | 121.51 грн |
500+ | 96.49 грн |
PSMN1R0-40YLDX |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 280A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280A (Ta)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 25A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8845 pF @ 20 V
Description: MOSFET N-CH 40V 280A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280A (Ta)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 25A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8845 pF @ 20 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1500+ | 90.59 грн |
3000+ | 82.88 грн |
PSMN1R4-30YLDX |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.42mOhm @ 25A, 10V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 15 V
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.42mOhm @ 25A, 10V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 15 V
на замовлення 19042 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 106.31 грн |
10+ | 83.62 грн |
100+ | 65.01 грн |
500+ | 51.71 грн |
PSMN1R4-40YLDX |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6661 pF @ 20 V
Description: MOSFET N-CH 40V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6661 pF @ 20 V
на замовлення 6264 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 138.42 грн |
10+ | 110.55 грн |
100+ | 87.97 грн |
500+ | 69.86 грн |
PSMN1R4-40YLDX |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6661 pF @ 20 V
Description: MOSFET N-CH 40V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6661 pF @ 20 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1500+ | 65.59 грн |
3000+ | 60 грн |
2N7002P,235 |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 360MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 10
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 360MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 10
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1146612 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
19+ | 15.7 грн |
26+ | 10.65 грн |
100+ | 5.19 грн |
500+ | 4.06 грн |
1000+ | 2.82 грн |
2000+ | 2.45 грн |
5000+ | 2.23 грн |
BAT54W,135 |
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 30V 200MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 30V 200MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 54116 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
24+ | 12.13 грн |
34+ | 8.18 грн |
100+ | 4.4 грн |
500+ | 3.25 грн |
1000+ | 2.26 грн |
2000+ | 1.87 грн |
5000+ | 1.74 грн |
BAV23,235 |
Виробник: Nexperia USA Inc.
Description: DIODE ARR GP 200V 225MA SOT143B
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 225mA (DC)
Supplier Device Package: SOT-143B
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Description: DIODE ARR GP 200V 225MA SOT143B
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 225mA (DC)
Supplier Device Package: SOT-143B
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
на замовлення 27741 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 24.26 грн |
18+ | 15.94 грн |
100+ | 7.78 грн |
500+ | 6.09 грн |
1000+ | 4.23 грн |
2000+ | 3.67 грн |
5000+ | 3.35 грн |
BAV70,235 |
Виробник: Nexperia USA Inc.
Description: DIODE ARR GP 100V 215MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: TO-236AB
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE ARR GP 100V 215MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: TO-236AB
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
на замовлення 112953 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
29+ | 9.99 грн |
41+ | 6.8 грн |
100+ | 3.67 грн |
500+ | 2.7 грн |
1000+ | 1.88 грн |
2000+ | 1.55 грн |
5000+ | 1.45 грн |
BAV70S,135 |
Виробник: Nexperia USA Inc.
Description: DIODE ARRAY GP 100V 250MA 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250mA (DC)
Supplier Device Package: 6-TSSOP
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE ARRAY GP 100V 250MA 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250mA (DC)
Supplier Device Package: 6-TSSOP
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
на замовлення 50211 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 24.97 грн |
17+ | 16.77 грн |
100+ | 8.17 грн |
500+ | 6.4 грн |
1000+ | 4.44 грн |
2000+ | 3.85 грн |
5000+ | 3.51 грн |
BAW56,235 |
Виробник: Nexperia USA Inc.
Description: DIODE ARRAY GP 90V 215MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: TO-236AB
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARRAY GP 90V 215MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: TO-236AB
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 261492 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
31+ | 9.28 грн |
45+ | 6.18 грн |
100+ | 3.35 грн |
500+ | 2.47 грн |
1000+ | 1.71 грн |
2000+ | 1.42 грн |
5000+ | 1.32 грн |
BC807-25,235 |
Виробник: Nexperia USA Inc.
Description: TRANS PNP 45V 0.5A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 80MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 45V 0.5A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 80MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 170987 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
27+ | 10.7 грн |
38+ | 7.28 грн |
100+ | 3.92 грн |
500+ | 2.89 грн |
1000+ | 2.01 грн |
2000+ | 1.66 грн |
5000+ | 1.55 грн |
BC807-40,235 |
Виробник: Nexperia USA Inc.
Description: TRANS PNP 45V 0.5A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 80MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 45V 0.5A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 80MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 421095 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 11.42 грн |
37+ | 7.49 грн |
100+ | 4.03 грн |
500+ | 2.97 грн |
1000+ | 2.06 грн |
2000+ | 1.71 грн |
5000+ | 1.59 грн |
BC846B,235 |
Виробник: Nexperia USA Inc.
Description: TRANS NPN 65V 0.1A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 250 mW
Description: TRANS NPN 65V 0.1A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 250 mW
на замовлення 583916 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
31+ | 9.28 грн |
45+ | 6.18 грн |
100+ | 3.35 грн |
500+ | 2.47 грн |
1000+ | 1.71 грн |
2000+ | 1.42 грн |
5000+ | 1.32 грн |
BC847BPN,135 |
Виробник: Nexperia USA Inc.
Description: TRANS NPN/PNP 45V 0.1A 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: 6-TSSOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS NPN/PNP 45V 0.1A 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: 6-TSSOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 22616 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
22+ | 13.56 грн |
30+ | 9.21 грн |
100+ | 4.49 грн |
500+ | 3.51 грн |
1000+ | 2.44 грн |
2000+ | 2.12 грн |
5000+ | 1.93 грн |
BC847BS,135 |
Виробник: Nexperia USA Inc.
Description: TRANS 2NPN 45V 0.1A 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: 6-TSSOP
Part Status: Active
Description: TRANS 2NPN 45V 0.1A 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: 6-TSSOP
Part Status: Active
на замовлення 167065 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
16+ | 17.84 грн |
24+ | 11.82 грн |
100+ | 5.75 грн |
500+ | 4.5 грн |
1000+ | 3.13 грн |
2000+ | 2.71 грн |
5000+ | 2.47 грн |
BSH103,235 |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 850MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 850mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 400mV @ 1mA (Min)
Supplier Device Package: TO-236AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 83 pF @ 24 V
Description: MOSFET N-CH 30V 850MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 850mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 400mV @ 1mA (Min)
Supplier Device Package: TO-236AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 83 pF @ 24 V
на замовлення 43995 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 25.69 грн |
15+ | 19.31 грн |
100+ | 11.56 грн |
500+ | 10.05 грн |
1000+ | 6.83 грн |
2000+ | 6.29 грн |
5000+ | 5.93 грн |
BZV55-C5V6,135 |
Виробник: Nexperia USA Inc.
Description: DIODE ZENER 5.6V 500MW LLDS
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: LLDS; MiniMelf
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Description: DIODE ZENER 5.6V 500MW LLDS
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: LLDS; MiniMelf
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
на замовлення 18382 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
22+ | 13.56 грн |
30+ | 9.28 грн |
100+ | 5.01 грн |
500+ | 3.69 грн |
1000+ | 2.57 грн |
2000+ | 2.13 грн |
5000+ | 1.98 грн |
BZX84-C4V7,235 |
Виробник: Nexperia USA Inc.
Description: DIODE ZENER 4.7V 250MW TO236AB
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: TO-236AB
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 4.7V 250MW TO236AB
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: TO-236AB
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 32067 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
27+ | 10.7 грн |
40+ | 7.01 грн |
100+ | 3.77 грн |
500+ | 2.78 грн |
1000+ | 1.93 грн |
2000+ | 1.6 грн |
5000+ | 1.49 грн |
PMBT3906,235 |
Виробник: Nexperia USA Inc.
Description: TRANS PNP 40V 0.2A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Qualification: AEC-Q101
Description: TRANS PNP 40V 0.2A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Qualification: AEC-Q101
на замовлення 81744 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
37+ | 7.85 грн |
51+ | 5.43 грн |
100+ | 2.94 грн |
500+ | 2.17 грн |
1000+ | 1.51 грн |
2000+ | 1.25 грн |
5000+ | 1.16 грн |
PMBT4401,235 |
Виробник: Nexperia USA Inc.
Description: TRANS NPN 40V 0.6A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Qualification: AEC-Q100
Description: TRANS NPN 40V 0.6A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Qualification: AEC-Q100
на замовлення 35583 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
31+ | 9.28 грн |
45+ | 6.18 грн |
100+ | 3.31 грн |
500+ | 2.44 грн |
1000+ | 1.7 грн |
2000+ | 1.41 грн |
5000+ | 1.31 грн |
74AHC1G17GVH |
Виробник: Nexperia USA Inc.
Description: IC BUFFER NON-INVERT 5.5V SC74A
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: SC-74A
Part Status: Active
Description: IC BUFFER NON-INVERT 5.5V SC74A
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: SC-74A
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 4.87 грн |
6000+ | 4.22 грн |
74AHC1G17GWH |
Виробник: Nexperia USA Inc.
Description: IC BUF NON-INVERT 5.5V 5TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 5-TSSOP
Part Status: Active
Description: IC BUF NON-INVERT 5.5V 5TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 5-TSSOP
Part Status: Active
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 4.31 грн |
6000+ | 3.74 грн |
15000+ | 3.32 грн |
30000+ | 2.92 грн |
74AHC30BQ-Q100X |
Виробник: Nexperia USA Inc.
Description: IC GATE NAND 1CH 8-INP 14DHVQFN
Description: IC GATE NAND 1CH 8-INP 14DHVQFN
товар відсутній
74AHCT1G17GVH |
Виробник: Nexperia USA Inc.
Description: IC BUFFER NON-INVERT 5.5V SC74A
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: SC-74A
Description: IC BUFFER NON-INVERT 5.5V SC74A
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: SC-74A
товар відсутній
74AHCT1G17GWH |
Виробник: Nexperia USA Inc.
Description: IC BUF NON-INVERT 5.5V 5TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 5-TSSOP
Description: IC BUF NON-INVERT 5.5V 5TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 5-TSSOP
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 4.31 грн |
6000+ | 3.74 грн |
74ALVC00BQ-Q100X |
Виробник: Nexperia USA Inc.
Description: IC GATE NAND 4CH 2-INP 14DHVQFN
Description: IC GATE NAND 4CH 2-INP 14DHVQFN
товар відсутній