Продукція > NEXPERIA USA INC. > Всі товари виробника NEXPERIA USA INC. (30870) > Сторінка 139 з 515
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PMV30UN2R | Nexperia USA Inc. |
Description: MOSFET N-CH 20V 4.2A TO236ABPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 4.2A, 4.5V Power Dissipation (Max): 490mW (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 10 V |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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PMV37EN2R | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 4.5A TO236ABPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 4.5A, 10V Power Dissipation (Max): 510mW (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 15 V |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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PMV45EN2R | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 4.1A TO236ABPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 4.1A, 10V Power Dissipation (Max): 510mW (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 15 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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PMV50XPR | Nexperia USA Inc. |
Description: MOSFET P-CH 20V 3.6A TO236ABPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.6A, 4.5V Power Dissipation (Max): 490mW (Ta), 4.63W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 744 pF @ 20 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PMV65XPEAR | Nexperia USA Inc. |
Description: MOSFET P-CH 20V 2.8A TO236ABPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 78mOhm @ 2.8A, 4.5V Power Dissipation (Max): 480mW (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 618 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PMV65XPER | Nexperia USA Inc. |
Description: MOSFET P-CH 20V 2.8A TO236ABPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 78mOhm @ 2.8A, 4.5V Power Dissipation (Max): 480mW (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 618 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PMZ130UNEYL | Nexperia USA Inc. |
Description: MOSFET N-CH 20V 1.8A DFN1006-3Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 1.8A, 4.5V Power Dissipation (Max): 350mW (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: SOT-883 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PMZ200UNEYL | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 1.4A DFN1006-3Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Rds On (Max) @ Id, Vgs: 250mOhm @ 1.4A, 4.5V Power Dissipation (Max): 350mW (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: SOT-883 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 89 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PMZ320UPEYL | Nexperia USA Inc. |
Description: MOSFET P-CH 30V 1A DFN1006-3Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 510mOhm @ 1A, 4.5V Power Dissipation (Max): 350mW (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: SOT-883 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 122 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PMZ550UNEYL | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 590MA DFN1006-3Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 590mA (Ta) Rds On (Max) @ Id, Vgs: 670mOhm @ 590mA, 4.5V Power Dissipation (Max): 310mW (Ta), 1.67W (Tc) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: SOT-883 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 30.3 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PMZB200UNEYL | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 1.4A DFN1006B-3Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Rds On (Max) @ Id, Vgs: 250mOhm @ 1.4A, 4.5V Power Dissipation (Max): 350mW (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: DFN1006B-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 89 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PMZB320UPEYL | Nexperia USA Inc. |
Description: MOSFET P-CH 30V 1A DFN1006B-3Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 510mOhm @ 1A, 4.5V Power Dissipation (Max): 350mW (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: DFN1006B-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 122 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PMZB550UNEYL | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 590MA DFN1006B-3Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 590mA (Ta) Rds On (Max) @ Id, Vgs: 670mOhm @ 590mA, 4.5V Power Dissipation (Max): 310mW (Ta), 1.67W (Tc) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: DFN1006B-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 30.3 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PUSB3TB6AZ | Nexperia USA Inc. |
Description: TVS DIODE 4.8VC 7XSONPackaging: Tape & Reel (TR) Package / Case: 7-XFDFN Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -40°C ~ 85°C (TA) Applications: General Purpose Capacitance @ Frequency: 0.27pF @ 1MHz Current - Peak Pulse (10/1000µs): 3.5A (8/20µs) Supplier Device Package: 7-XSON (1.1x2.1) Unidirectional Channels: 7 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 4.8V (Typ) Power Line Protection: Yes Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BSH111BKR | Nexperia USA Inc. |
Description: MOSFET N-CH 55V 210MA TO236ABPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 210mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 200mA, 4.5V Power Dissipation (Max): 302mW (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BSN20BKR | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 265MA TO236ABPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 265mA (Ta) Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V Power Dissipation (Max): 310mW (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.49 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 20.2 pF @ 30 V |
на замовлення 2727 шт: термін постачання 21-31 дні (днів) |
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BSH111BKR | Nexperia USA Inc. |
Description: MOSFET N-CH 55V 210MA TO236ABPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 210mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 200mA, 4.5V Power Dissipation (Max): 302mW (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BSN20BKR | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 265MA TO236ABPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 265mA (Ta) Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V Power Dissipation (Max): 310mW (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.49 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 20.2 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BC55-16PA,115 | Nexperia USA Inc. |
Description: TRANS NPN 60V 1A 3HUSONPackaging: Cut Tape (CT) Package / Case: 3-PowerUDFN Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Frequency - Transition: 180MHz Supplier Device Package: 3-HUSON (2x2) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 650 mW Grade: Automotive Qualification: AEC-Q100 |
на замовлення 89348 шт: термін постачання 21-31 дні (днів) |
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BC55PA,115 | Nexperia USA Inc. |
Description: TRANS NPN 60V 1A DFN2020D-3Packaging: Cut Tape (CT) Package / Case: 3-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 180MHz Supplier Device Package: DFN2020D-3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 420 mW Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2512 шт: термін постачання 21-31 дні (днів) |
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BC69-16PA,115 | Nexperia USA Inc. |
Description: TRANS PNP 20V 2A 3HUSONPackaging: Cut Tape (CT) Package / Case: 3-PowerUDFN Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V Frequency - Transition: 140MHz Supplier Device Package: 3-HUSON (2x2) Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 420 mW Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BC69-25PA,115 | Nexperia USA Inc. |
Description: TRANS PNP 20V 2A 3HUSONPackaging: Cut Tape (CT) Package / Case: 3-PowerUDFN Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 1V Frequency - Transition: 140MHz Supplier Device Package: 3-HUSON (2x2) Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 420 mW Grade: Automotive Qualification: AEC-Q100 |
на замовлення 3080 шт: термін постачання 21-31 дні (днів) |
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BC69PA,115 | Nexperia USA Inc. |
Description: TRANS PNP 20V 2A 3HUSONPackaging: Cut Tape (CT) Package / Case: 3-PowerUDFN Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V Frequency - Transition: 140MHz Supplier Device Package: 3-HUSON (2x2) Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 420 mW Grade: Automotive Qualification: AEC-Q100 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PBHV8115X,115 | Nexperia USA Inc. |
Description: TRANS NPN 150V 1A SOT-89Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 50mV @ 20mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V Frequency - Transition: 30MHz Supplier Device Package: SOT-89 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 1.5 W Grade: Automotive Qualification: AEC-Q100 |
на замовлення 3735 шт: термін постачання 21-31 дні (днів) |
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PBHV8540X,115 | Nexperia USA Inc. |
Description: TRANS NPN 400V 0.5A SOT-89Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 60mA, 300mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V Frequency - Transition: 30MHz Supplier Device Package: SOT-89 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 520 mW Grade: Automotive Qualification: AEC-Q100 |
на замовлення 791 шт: термін постачання 21-31 дні (днів) |
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PBHV9040X,115 | Nexperia USA Inc. |
Description: TRANS PNP 400V 0.25A SOT89Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 20mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 10V Frequency - Transition: 55MHz Supplier Device Package: SOT-89 Part Status: Active Current - Collector (Ic) (Max): 250 mA Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 1.5 W Grade: Automotive Qualification: AEC-Q100 |
на замовлення 1861 шт: термін постачання 21-31 дні (днів) |
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PBHV9414ZX | Nexperia USA Inc. |
Description: TRANS PNP 140V 4A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 400mA, 4A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: SOT-223 Part Status: Active Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 650 mW Grade: Automotive Qualification: AEC-Q100 |
на замовлення 190 шт: термін постачання 21-31 дні (днів) |
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PBLS2022D,115 | Nexperia USA Inc. |
Description: TRANS PREBIAS 1PNP 1PNP 6-TSOPPackaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 1 PNP Pre-Biased, 1 PNP Power - Max: 760mW Current - Collector (Ic) (Max): 100mA, 1.8A Voltage - Collector Emitter Breakdown (Max): 50V, 20V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 210mV @ 100mA, 1.8A Current - Collector Cutoff (Max): 1µA, 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V / 200 @ 1A, 2V Frequency - Transition: 130MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 4.7kOhms Supplier Device Package: 6-TSOP Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PBLS6023D,115 | Nexperia USA Inc. |
Description: TRANS PREBIAS 1NPN 1PNP 6-TSOPPackaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 1 NPN Pre-Biased, 1 PNP Power - Max: 760mW Current - Collector (Ic) (Max): 100mA, 1.5A Voltage - Collector Emitter Breakdown (Max): 50V, 60V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 260mV @ 100mA, 1.5A Current - Collector Cutoff (Max): 1µA, 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 140 @ 1A, 2V Frequency - Transition: 150MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: 6-TSOP Part Status: Active |
на замовлення 958 шт: термін постачання 21-31 дні (днів) |
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PBSS4260QAZ | Nexperia USA Inc. |
Description: TRANS NPN 60V 2A DFN1010D-3Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 190mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2A, 2V Frequency - Transition: 180MHz Supplier Device Package: DFN1010D-3 Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 325 mW Grade: Automotive Qualification: AEC-Q100 |
на замовлення 135 шт: термін постачання 21-31 дні (днів) |
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PBSS4360ZX | Nexperia USA Inc. |
Description: TRANS NPN 60V 3A SOT-223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 5V Frequency - Transition: 145MHz Supplier Device Package: SOT-223 Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 650 mW Grade: Automotive Qualification: AEC-Q100 |
на замовлення 158 шт: термін постачання 21-31 дні (днів) |
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PBSS5160QAZ | Nexperia USA Inc. |
Description: TRANS PNP 60V 1A DFN1010D-3Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 460mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 1A, 2V Frequency - Transition: 150MHz Supplier Device Package: DFN1010D-3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 325 mW Grade: Automotive Qualification: AEC-Q100 |
на замовлення 4855 шт: термін постачання 21-31 дні (днів) |
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PBSS5260QAZ | Nexperia USA Inc. |
Description: TRANS PNP 60V 1.7A DFN1010D-3Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.7A, 2V Frequency - Transition: 150MHz Supplier Device Package: DFN1010D-3 Part Status: Active Current - Collector (Ic) (Max): 1.7 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 325 mW Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2687 шт: термін постачання 21-31 дні (днів) |
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PMEG4010ETP,115 | Nexperia USA Inc. |
Description: DIODE SCHOTTK 40V 1A SOD128/CFP5Packaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 130pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-128/CFP5 Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 40 V |
на замовлення 9949 шт: термін постачання 21-31 дні (днів) |
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PMEG4020ETR,115 | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 40V 2A SOD123WPackaging: Cut Tape (CT) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 95pF @ 10V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123W Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A Current - Reverse Leakage @ Vr: 100 µA @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PMSTA42,115 | Nexperia USA Inc. |
Description: TRANS NPN 300V 0.1A SOT-323Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V Frequency - Transition: 50MHz Supplier Device Package: SOT-323 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 200 mW Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2515 шт: термін постачання 21-31 дні (днів) |
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PMSTA92,115 | Nexperia USA Inc. |
Description: TRANS PNP 300V 0.1A SOT-323Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V Frequency - Transition: 50MHz Supplier Device Package: SOT-323 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 200 mW Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5400 шт: термін постачання 21-31 дні (днів) |
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PUMF11,115 | Nexperia USA Inc. |
Description: TRANS PREBIAS 1NPN 1PNP 6TSSOPPackaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN Pre-Biased, 1 PNP Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V, 40V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V / 120 @ 1mA, 6V Frequency - Transition: 100MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: 6-TSSOP Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BC52-10PASX | Nexperia USA Inc. |
Description: TRANS PNP 60V 1A DFN2020D-3Packaging: Cut Tape (CT) Package / Case: 3-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 145MHz Supplier Device Package: DFN2020D-3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 420 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BC52-16PASX | Nexperia USA Inc. |
Description: TRANS PNP 60V 1A DFN2020D-3Packaging: Cut Tape (CT) Package / Case: 3-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 145MHz Supplier Device Package: DFN2020D-3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 420 mW |
на замовлення 2980 шт: термін постачання 21-31 дні (днів) |
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BC53PASX | Nexperia USA Inc. |
Description: TRANS PNP 80V 1A DFN2020D-3Packaging: Cut Tape (CT) Package / Case: 3-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 145MHz Supplier Device Package: DFN2020D-3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 420 mW |
на замовлення 564 шт: термін постачання 21-31 дні (днів) |
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BC54PASX | Nexperia USA Inc. |
Description: TRANS NPN 45V 1A DFN2020D-3Packaging: Cut Tape (CT) Package / Case: 3-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 180MHz Supplier Device Package: DFN2020D-3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 420 mW Grade: Automotive Qualification: AEC-Q100 |
на замовлення 24251 шт: термін постачання 21-31 дні (днів) |
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BC55-10PASX | Nexperia USA Inc. |
Description: TRANS NPN 60V 1A DFN2020D-3Packaging: Cut Tape (CT) Package / Case: 3-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 180MHz Supplier Device Package: DFN2020D-3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 420 mW Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BC55-16PASX | Nexperia USA Inc. |
Description: TRANS NPN 60V 1A DFN2020D-3Packaging: Cut Tape (CT) Package / Case: 3-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 180MHz Supplier Device Package: DFN2020D-3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 420 mW Grade: Automotive Qualification: AEC-Q100 |
на замовлення 5010 шт: термін постачання 21-31 дні (днів) |
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BC56-10PASX | Nexperia USA Inc. |
Description: TRANS NPN 80V 1A DFN2020D-3Packaging: Cut Tape (CT) Package / Case: 3-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 180MHz Supplier Device Package: DFN2020D-3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 420 mW Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BC56PASX | Nexperia USA Inc. |
Description: TRANS NPN 80V 1A DFN2020D-3Packaging: Cut Tape (CT) Package / Case: 3-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 180MHz Supplier Device Package: DFN2020D-3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 420 mW Grade: Automotive Qualification: AEC-Q100 |
на замовлення 5715 шт: термін постачання 21-31 дні (днів) |
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BC69-25PASX | Nexperia USA Inc. |
Description: TRANS PNP 20V 2A DFN2020D-3Packaging: Cut Tape (CT) Package / Case: 3-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V Frequency - Transition: 140MHz Supplier Device Package: DFN2020D-3 Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 420 mW |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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PBHV2160ZX | Nexperia USA Inc. |
Description: TRANS NPN 600V 0.1A SOT-223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 125mV @ 6mA, 30mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 10V Supplier Device Package: SOT-223 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 650 mW |
на замовлення 1161 шт: термін постачання 21-31 дні (днів) |
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PBHV3160ZX | Nexperia USA Inc. |
Description: TRANS PNP 600V 0.1A SOT-223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 6mA, 30mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 10V Frequency - Transition: 38MHz Supplier Device Package: SOT-223 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 650 mW Grade: Automotive Qualification: AEC-Q100 |
на замовлення 3671 шт: термін постачання 21-31 дні (днів) |
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PBHV8560ZX | Nexperia USA Inc. |
Description: TRANS NPN 600V 0.5A SOT-223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 100mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 10V Supplier Device Package: SOT-223 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 650 mW Grade: Automotive Qualification: AEC-Q100 |
на замовлення 473 шт: термін постачання 21-31 дні (днів) |
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PBHV9560ZX | Nexperia USA Inc. |
Description: TRANS PNP 600V 0.5A SOT-223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 10V Frequency - Transition: 38MHz Supplier Device Package: SOT-223 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 650 mW Grade: Automotive Qualification: AEC-Q100 |
на замовлення 581 шт: термін постачання 21-31 дні (днів) |
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PHPT60415PYX | Nexperia USA Inc. |
Description: TRANS PNP 40V 15A LFPAK56 PWRSO8Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 850mV @ 1.5A, 15A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 80MHz Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 1.5 W Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2584 шт: термін постачання 21-31 дні (днів) |
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PMEG045V100EPDAZ | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 45V 10A CFP15Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 37 ns Technology: Schottky Capacitance @ Vr, F: 1190pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: CFP15 Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 9694 шт: термін постачання 21-31 дні (днів) |
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PMEG10010ELRX | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 100V 1A SOD123WPackaging: Cut Tape (CT) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3.7 ns Technology: Schottky Capacitance @ Vr, F: 70pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123W Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A Current - Reverse Leakage @ Vr: 150 nA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PMEG10020AELPX | Nexperia USA Inc. |
Description: DIODE SCHOTT 100V 2A SOD128/CFP5Packaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 135pF @ 1V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-128/CFP5 Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 770 mV @ 2 A Current - Reverse Leakage @ Vr: 300 nA @ 100 V |
на замовлення 9918 шт: термін постачання 21-31 дні (днів) |
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PMEG10020ELRX | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 100V 2A SOD123WPackaging: Cut Tape (CT) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3.7 ns Technology: Schottky Capacitance @ Vr, F: 70pF @ 1V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123W Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 830 mV @ 2 A Current - Reverse Leakage @ Vr: 150 nA @ 100 V |
на замовлення 1538 шт: термін постачання 21-31 дні (днів) |
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PMEG10030ELPX | Nexperia USA Inc. |
Description: DIODE SCHOTT 100V 3A SOD128/CFP5Packaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 8 ns Technology: Schottky Capacitance @ Vr, F: 200pF @ 1V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SOD-128/CFP5 Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 770 mV @ 3 A Current - Reverse Leakage @ Vr: 450 nA @ 100 V |
на замовлення 452681 шт: термін постачання 21-31 дні (днів) |
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PMEG2020EPASX | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 20V 2A DFN2020D-3Packaging: Cut Tape (CT) Package / Case: 3-UDFN Exposed Pad Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Schottky Capacitance @ Vr, F: 175pF @ 1V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DFN2020D-3 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 420 mV @ 2 A Current - Reverse Leakage @ Vr: 1.9 mA @ 20 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6828 шт: термін постачання 21-31 дні (днів) |
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PMEG3010AESBYL | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 30V 1A DSN1006-2Packaging: Cut Tape (CT) Package / Case: 2-XDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3.5 ns Technology: Schottky Capacitance @ Vr, F: 86pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DSN1006-2 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A Current - Reverse Leakage @ Vr: 255 µA @ 20 V |
на замовлення 1376 шт: термін постачання 21-31 дні (днів) |
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PMEG4010AESBYL | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 40V 1A DSN1006-2Packaging: Cut Tape (CT) Package / Case: 2-XDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3.1 ns Technology: Schottky Capacitance @ Vr, F: 75pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DSN1006-2 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 505 mV @ 1 A Current - Reverse Leakage @ Vr: 1.25 mA @ 40 V |
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| PMV30UN2R |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 20V 4.2A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 4.2A, 4.5V
Power Dissipation (Max): 490mW (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 10 V
Description: MOSFET N-CH 20V 4.2A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 4.2A, 4.5V
Power Dissipation (Max): 490mW (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 10 V
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.90 грн |
| 6000+ | 4.37 грн |
| 9000+ | 4.16 грн |
| 15000+ | 3.90 грн |
| 21000+ | 3.79 грн |
| PMV37EN2R |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 4.5A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.5A, 10V
Power Dissipation (Max): 510mW (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 15 V
Description: MOSFET N-CH 30V 4.5A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.5A, 10V
Power Dissipation (Max): 510mW (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 15 V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.35 грн |
| 6000+ | 4.86 грн |
| 9000+ | 4.58 грн |
| 15000+ | 4.27 грн |
| PMV45EN2R |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 4.1A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4.1A, 10V
Power Dissipation (Max): 510mW (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 15 V
Description: MOSFET N-CH 30V 4.1A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4.1A, 10V
Power Dissipation (Max): 510mW (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 15 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.77 грн |
| PMV50XPR |
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Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 3.6A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 490mW (Ta), 4.63W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 744 pF @ 20 V
Description: MOSFET P-CH 20V 3.6A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 490mW (Ta), 4.63W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 744 pF @ 20 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 9.30 грн |
| PMV65XPEAR |
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Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 2.8A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 480mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 618 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET P-CH 20V 2.8A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 480mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 618 pF @ 10 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 10.72 грн |
| PMV65XPER |
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Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 2.8A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 480mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 618 pF @ 10 V
Description: MOSFET P-CH 20V 2.8A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 480mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 618 pF @ 10 V
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| PMZ130UNEYL |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 20V 1.8A DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.8A, 4.5V
Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 10 V
Description: MOSFET N-CH 20V 1.8A DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.8A, 4.5V
Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 10 V
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| PMZ200UNEYL |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 1.4A DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.4A, 4.5V
Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 89 pF @ 15 V
Description: MOSFET N-CH 30V 1.4A DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.4A, 4.5V
Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 89 pF @ 15 V
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| PMZ320UPEYL |
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Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 30V 1A DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 510mOhm @ 1A, 4.5V
Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 122 pF @ 15 V
Description: MOSFET P-CH 30V 1A DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 510mOhm @ 1A, 4.5V
Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 122 pF @ 15 V
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| PMZ550UNEYL |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 590MA DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 590mA (Ta)
Rds On (Max) @ Id, Vgs: 670mOhm @ 590mA, 4.5V
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 30.3 pF @ 15 V
Description: MOSFET N-CH 30V 590MA DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 590mA (Ta)
Rds On (Max) @ Id, Vgs: 670mOhm @ 590mA, 4.5V
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 30.3 pF @ 15 V
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| PMZB200UNEYL |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 1.4A DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.4A, 4.5V
Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 89 pF @ 15 V
Description: MOSFET N-CH 30V 1.4A DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.4A, 4.5V
Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 89 pF @ 15 V
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| PMZB320UPEYL |
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Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 30V 1A DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 510mOhm @ 1A, 4.5V
Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 122 pF @ 15 V
Description: MOSFET P-CH 30V 1A DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 510mOhm @ 1A, 4.5V
Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 122 pF @ 15 V
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| PMZB550UNEYL |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 590MA DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 590mA (Ta)
Rds On (Max) @ Id, Vgs: 670mOhm @ 590mA, 4.5V
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 30.3 pF @ 15 V
Description: MOSFET N-CH 30V 590MA DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 590mA (Ta)
Rds On (Max) @ Id, Vgs: 670mOhm @ 590mA, 4.5V
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 30.3 pF @ 15 V
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| PUSB3TB6AZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TVS DIODE 4.8VC 7XSON
Packaging: Tape & Reel (TR)
Package / Case: 7-XFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.27pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Supplier Device Package: 7-XSON (1.1x2.1)
Unidirectional Channels: 7
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 4.8V (Typ)
Power Line Protection: Yes
Part Status: Active
Description: TVS DIODE 4.8VC 7XSON
Packaging: Tape & Reel (TR)
Package / Case: 7-XFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.27pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Supplier Device Package: 7-XSON (1.1x2.1)
Unidirectional Channels: 7
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 4.8V (Typ)
Power Line Protection: Yes
Part Status: Active
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| BSH111BKR |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 55V 210MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 200mA, 4.5V
Power Dissipation (Max): 302mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 30 V
Description: MOSFET N-CH 55V 210MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 200mA, 4.5V
Power Dissipation (Max): 302mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 30 V
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В кошику
од. на суму грн.
| BSN20BKR |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 265MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 265mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.49 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 20.2 pF @ 30 V
Description: MOSFET N-CH 60V 265MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 265mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.49 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 20.2 pF @ 30 V
на замовлення 2727 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 17.39 грн |
| 31+ | 10.53 грн |
| 100+ | 6.55 грн |
| 500+ | 4.50 грн |
| 1000+ | 3.98 грн |
| BSH111BKR |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 55V 210MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 200mA, 4.5V
Power Dissipation (Max): 302mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 30 V
Description: MOSFET N-CH 55V 210MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 200mA, 4.5V
Power Dissipation (Max): 302mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 30 V
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В кошику
од. на суму грн.
| BSN20BKR |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 265MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 265mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.49 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 20.2 pF @ 30 V
Description: MOSFET N-CH 60V 265MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 265mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.49 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 20.2 pF @ 30 V
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од. на суму грн.
| BC55-16PA,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS NPN 60V 1A 3HUSON
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: 3-HUSON (2x2)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 650 mW
Grade: Automotive
Qualification: AEC-Q100
Description: TRANS NPN 60V 1A 3HUSON
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: 3-HUSON (2x2)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 650 mW
Grade: Automotive
Qualification: AEC-Q100
на замовлення 89348 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 37.26 грн |
| 15+ | 21.93 грн |
| 50+ | 15.85 грн |
| 100+ | 13.01 грн |
| BC55PA,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS NPN 60V 1A DFN2020D-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: DFN2020D-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 420 mW
Grade: Automotive
Qualification: AEC-Q100
Description: TRANS NPN 60V 1A DFN2020D-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: DFN2020D-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 420 mW
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2512 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 22.36 грн |
| 22+ | 14.51 грн |
| 100+ | 9.74 грн |
| 500+ | 7.04 грн |
| 1000+ | 6.34 грн |
| BC69-16PA,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PNP 20V 2A 3HUSON
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Frequency - Transition: 140MHz
Supplier Device Package: 3-HUSON (2x2)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 420 mW
Grade: Automotive
Qualification: AEC-Q100
Description: TRANS PNP 20V 2A 3HUSON
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Frequency - Transition: 140MHz
Supplier Device Package: 3-HUSON (2x2)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 420 mW
Grade: Automotive
Qualification: AEC-Q100
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В кошику
од. на суму грн.
| BC69-25PA,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PNP 20V 2A 3HUSON
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 1V
Frequency - Transition: 140MHz
Supplier Device Package: 3-HUSON (2x2)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 420 mW
Grade: Automotive
Qualification: AEC-Q100
Description: TRANS PNP 20V 2A 3HUSON
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 1V
Frequency - Transition: 140MHz
Supplier Device Package: 3-HUSON (2x2)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 420 mW
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3080 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 38.09 грн |
| 14+ | 22.88 грн |
| BC69PA,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PNP 20V 2A 3HUSON
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 140MHz
Supplier Device Package: 3-HUSON (2x2)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 420 mW
Grade: Automotive
Qualification: AEC-Q100
Description: TRANS PNP 20V 2A 3HUSON
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 140MHz
Supplier Device Package: 3-HUSON (2x2)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 420 mW
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.78 грн |
| 16+ | 20.65 грн |
| 100+ | 13.12 грн |
| 500+ | 9.24 грн |
| 1000+ | 8.24 грн |
| PBHV8115X,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS NPN 150V 1A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 50mV @ 20mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Frequency - Transition: 30MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1.5 W
Grade: Automotive
Qualification: AEC-Q100
Description: TRANS NPN 150V 1A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 50mV @ 20mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Frequency - Transition: 30MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1.5 W
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3735 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 65.42 грн |
| 10+ | 39.15 грн |
| 50+ | 28.61 грн |
| 100+ | 23.64 грн |
| PBHV8540X,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS NPN 400V 0.5A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 60mA, 300mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Frequency - Transition: 30MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 520 mW
Grade: Automotive
Qualification: AEC-Q100
Description: TRANS NPN 400V 0.5A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 60mA, 300mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Frequency - Transition: 30MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 520 mW
Grade: Automotive
Qualification: AEC-Q100
на замовлення 791 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 52.17 грн |
| 11+ | 31.10 грн |
| 100+ | 20.02 грн |
| 500+ | 14.31 грн |
| PBHV9040X,115 |
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Виробник: Nexperia USA Inc.
Description: TRANS PNP 400V 0.25A SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 20mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 10V
Frequency - Transition: 55MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 250 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1.5 W
Grade: Automotive
Qualification: AEC-Q100
Description: TRANS PNP 400V 0.25A SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 20mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 10V
Frequency - Transition: 55MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 250 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1.5 W
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1861 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 57.96 грн |
| 10+ | 34.77 грн |
| 100+ | 22.37 грн |
| 500+ | 15.98 грн |
| PBHV9414ZX |
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Виробник: Nexperia USA Inc.
Description: TRANS PNP 140V 4A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 400mA, 4A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 650 mW
Grade: Automotive
Qualification: AEC-Q100
Description: TRANS PNP 140V 4A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 400mA, 4A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 650 mW
Grade: Automotive
Qualification: AEC-Q100
на замовлення 190 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 65.42 грн |
| 10+ | 39.23 грн |
| 100+ | 25.42 грн |
| PBLS2022D,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS 1PNP 1PNP 6-TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 PNP Pre-Biased, 1 PNP
Power - Max: 760mW
Current - Collector (Ic) (Max): 100mA, 1.8A
Voltage - Collector Emitter Breakdown (Max): 50V, 20V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 210mV @ 100mA, 1.8A
Current - Collector Cutoff (Max): 1µA, 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V / 200 @ 1A, 2V
Frequency - Transition: 130MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: 6-TSOP
Part Status: Active
Description: TRANS PREBIAS 1PNP 1PNP 6-TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 PNP Pre-Biased, 1 PNP
Power - Max: 760mW
Current - Collector (Ic) (Max): 100mA, 1.8A
Voltage - Collector Emitter Breakdown (Max): 50V, 20V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 210mV @ 100mA, 1.8A
Current - Collector Cutoff (Max): 1µA, 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V / 200 @ 1A, 2V
Frequency - Transition: 130MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: 6-TSOP
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| PBLS6023D,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS 1NPN 1PNP 6-TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN Pre-Biased, 1 PNP
Power - Max: 760mW
Current - Collector (Ic) (Max): 100mA, 1.5A
Voltage - Collector Emitter Breakdown (Max): 50V, 60V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 260mV @ 100mA, 1.5A
Current - Collector Cutoff (Max): 1µA, 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 140 @ 1A, 2V
Frequency - Transition: 150MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: 6-TSOP
Part Status: Active
Description: TRANS PREBIAS 1NPN 1PNP 6-TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN Pre-Biased, 1 PNP
Power - Max: 760mW
Current - Collector (Ic) (Max): 100mA, 1.5A
Voltage - Collector Emitter Breakdown (Max): 50V, 60V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 260mV @ 100mA, 1.5A
Current - Collector Cutoff (Max): 1µA, 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 140 @ 1A, 2V
Frequency - Transition: 150MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: 6-TSOP
Part Status: Active
на замовлення 958 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 61.28 грн |
| 10+ | 36.60 грн |
| 50+ | 26.66 грн |
| 100+ | 22.02 грн |
| PBSS4260QAZ |
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Виробник: Nexperia USA Inc.
Description: TRANS NPN 60V 2A DFN1010D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2A, 2V
Frequency - Transition: 180MHz
Supplier Device Package: DFN1010D-3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 325 mW
Grade: Automotive
Qualification: AEC-Q100
Description: TRANS NPN 60V 2A DFN1010D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2A, 2V
Frequency - Transition: 180MHz
Supplier Device Package: DFN1010D-3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 325 mW
Grade: Automotive
Qualification: AEC-Q100
на замовлення 135 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 38.92 грн |
| 14+ | 22.96 грн |
| 100+ | 14.52 грн |
| PBSS4360ZX |
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Виробник: Nexperia USA Inc.
Description: TRANS NPN 60V 3A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 5V
Frequency - Transition: 145MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 650 mW
Grade: Automotive
Qualification: AEC-Q100
Description: TRANS NPN 60V 3A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 5V
Frequency - Transition: 145MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 650 mW
Grade: Automotive
Qualification: AEC-Q100
на замовлення 158 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 49.68 грн |
| 11+ | 29.50 грн |
| 50+ | 21.42 грн |
| 100+ | 17.65 грн |
| PBSS5160QAZ |
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Виробник: Nexperia USA Inc.
Description: TRANS PNP 60V 1A DFN1010D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 460mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 1A, 2V
Frequency - Transition: 150MHz
Supplier Device Package: DFN1010D-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 325 mW
Grade: Automotive
Qualification: AEC-Q100
Description: TRANS PNP 60V 1A DFN1010D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 460mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 1A, 2V
Frequency - Transition: 150MHz
Supplier Device Package: DFN1010D-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 325 mW
Grade: Automotive
Qualification: AEC-Q100
на замовлення 4855 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 37.26 грн |
| 15+ | 21.93 грн |
| 100+ | 13.85 грн |
| 500+ | 9.73 грн |
| 1000+ | 8.67 грн |
| 2000+ | 7.78 грн |
| PBSS5260QAZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PNP 60V 1.7A DFN1010D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.7A, 2V
Frequency - Transition: 150MHz
Supplier Device Package: DFN1010D-3
Part Status: Active
Current - Collector (Ic) (Max): 1.7 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 325 mW
Grade: Automotive
Qualification: AEC-Q100
Description: TRANS PNP 60V 1.7A DFN1010D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.7A, 2V
Frequency - Transition: 150MHz
Supplier Device Package: DFN1010D-3
Part Status: Active
Current - Collector (Ic) (Max): 1.7 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 325 mW
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2687 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.78 грн |
| 16+ | 20.49 грн |
| 100+ | 13.00 грн |
| 500+ | 9.14 грн |
| 1000+ | 8.16 грн |
| 2000+ | 7.33 грн |
| PMEG4010ETP,115 |
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Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTK 40V 1A SOD128/CFP5
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Description: DIODE SCHOTTK 40V 1A SOD128/CFP5
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
на замовлення 9949 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 49.68 грн |
| 11+ | 29.58 грн |
| 50+ | 21.50 грн |
| 100+ | 17.71 грн |
| PMEG4020ETR,115 |
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Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 40V 2A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 95pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Description: DIODE SCHOTTKY 40V 2A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 95pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
товару немає в наявності
В кошику
од. на суму грн.
| PMSTA42,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS NPN 300V 0.1A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 200 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS NPN 300V 0.1A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 200 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2515 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 24.01 грн |
| 23+ | 14.03 грн |
| 100+ | 8.76 грн |
| 500+ | 6.07 грн |
| 1000+ | 5.37 грн |
| PMSTA92,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PNP 300V 0.1A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 200 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 300V 0.1A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 200 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5400 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 24.01 грн |
| 23+ | 14.19 грн |
| 100+ | 8.89 грн |
| 500+ | 6.16 грн |
| 1000+ | 5.45 грн |
| PUMF11,115 |
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Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS 1NPN 1PNP 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN Pre-Biased, 1 PNP
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V, 40V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V / 120 @ 1mA, 6V
Frequency - Transition: 100MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: 6-TSSOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: TRANS PREBIAS 1NPN 1PNP 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN Pre-Biased, 1 PNP
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V, 40V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V / 120 @ 1mA, 6V
Frequency - Transition: 100MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: 6-TSSOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| BC52-10PASX |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PNP 60V 1A DFN2020D-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: DFN2020D-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 420 mW
Description: TRANS PNP 60V 1A DFN2020D-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: DFN2020D-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 420 mW
товару немає в наявності
В кошику
од. на суму грн.
| BC52-16PASX |
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Виробник: Nexperia USA Inc.
Description: TRANS PNP 60V 1A DFN2020D-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: DFN2020D-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 420 mW
Description: TRANS PNP 60V 1A DFN2020D-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: DFN2020D-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 420 mW
на замовлення 2980 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 28.98 грн |
| 16+ | 19.93 грн |
| 100+ | 10.06 грн |
| 500+ | 8.36 грн |
| 1000+ | 6.51 грн |
| BC53PASX |
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Виробник: Nexperia USA Inc.
Description: TRANS PNP 80V 1A DFN2020D-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: DFN2020D-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 420 mW
Description: TRANS PNP 80V 1A DFN2020D-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: DFN2020D-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 420 mW
на замовлення 564 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 29.81 грн |
| 19+ | 17.70 грн |
| 100+ | 11.14 грн |
| 500+ | 7.80 грн |
| BC54PASX |
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Виробник: Nexperia USA Inc.
Description: TRANS NPN 45V 1A DFN2020D-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: DFN2020D-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 420 mW
Grade: Automotive
Qualification: AEC-Q100
Description: TRANS NPN 45V 1A DFN2020D-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: DFN2020D-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 420 mW
Grade: Automotive
Qualification: AEC-Q100
на замовлення 24251 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 33.95 грн |
| 16+ | 20.09 грн |
| 100+ | 12.69 грн |
| 500+ | 8.89 грн |
| 1000+ | 7.91 грн |
| BC55-10PASX |
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Виробник: Nexperia USA Inc.
Description: TRANS NPN 60V 1A DFN2020D-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: DFN2020D-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 420 mW
Grade: Automotive
Qualification: AEC-Q100
Description: TRANS NPN 60V 1A DFN2020D-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: DFN2020D-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 420 mW
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| BC55-16PASX |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS NPN 60V 1A DFN2020D-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: DFN2020D-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 420 mW
Grade: Automotive
Qualification: AEC-Q100
Description: TRANS NPN 60V 1A DFN2020D-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: DFN2020D-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 420 mW
Grade: Automotive
Qualification: AEC-Q100
на замовлення 5010 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 33.12 грн |
| 17+ | 19.46 грн |
| 100+ | 12.34 грн |
| 500+ | 8.65 грн |
| 1000+ | 7.71 грн |
| BC56-10PASX |
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Виробник: Nexperia USA Inc.
Description: TRANS NPN 80V 1A DFN2020D-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: DFN2020D-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 420 mW
Grade: Automotive
Qualification: AEC-Q100
Description: TRANS NPN 80V 1A DFN2020D-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: DFN2020D-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 420 mW
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| BC56PASX |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS NPN 80V 1A DFN2020D-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: DFN2020D-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 420 mW
Grade: Automotive
Qualification: AEC-Q100
Description: TRANS NPN 80V 1A DFN2020D-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: DFN2020D-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 420 mW
Grade: Automotive
Qualification: AEC-Q100
на замовлення 5715 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 31.47 грн |
| 18+ | 18.26 грн |
| 100+ | 11.50 грн |
| 500+ | 8.05 грн |
| 1000+ | 7.17 грн |
| BC69-25PASX |
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Виробник: Nexperia USA Inc.
Description: TRANS PNP 20V 2A DFN2020D-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 140MHz
Supplier Device Package: DFN2020D-3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 420 mW
Description: TRANS PNP 20V 2A DFN2020D-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 140MHz
Supplier Device Package: DFN2020D-3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 420 mW
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 35.61 грн |
| 16+ | 20.97 грн |
| 100+ | 13.32 грн |
| 500+ | 9.38 грн |
| 1000+ | 8.37 грн |
| PBHV2160ZX |
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Виробник: Nexperia USA Inc.
Description: TRANS NPN 600V 0.1A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 125mV @ 6mA, 30mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 10V
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 650 mW
Description: TRANS NPN 600V 0.1A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 125mV @ 6mA, 30mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 10V
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 650 mW
на замовлення 1161 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 58.79 грн |
| 10+ | 34.93 грн |
| 100+ | 22.61 грн |
| 500+ | 16.23 грн |
| PBHV3160ZX |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PNP 600V 0.1A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 6mA, 30mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 10V
Frequency - Transition: 38MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 650 mW
Grade: Automotive
Qualification: AEC-Q100
Description: TRANS PNP 600V 0.1A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 6mA, 30mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 10V
Frequency - Transition: 38MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 650 mW
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3671 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 72.87 грн |
| 10+ | 43.78 грн |
| 50+ | 32.13 грн |
| 100+ | 26.60 грн |
| PBHV8560ZX |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS NPN 600V 0.5A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 10V
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 650 mW
Grade: Automotive
Qualification: AEC-Q100
Description: TRANS NPN 600V 0.5A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 10V
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 650 mW
Grade: Automotive
Qualification: AEC-Q100
на замовлення 473 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 77.01 грн |
| 10+ | 45.85 грн |
| 50+ | 33.65 грн |
| 100+ | 27.87 грн |
| PBHV9560ZX |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PNP 600V 0.5A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 10V
Frequency - Transition: 38MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 650 mW
Grade: Automotive
Qualification: AEC-Q100
Description: TRANS PNP 600V 0.5A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 10V
Frequency - Transition: 38MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 650 mW
Grade: Automotive
Qualification: AEC-Q100
на замовлення 581 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 77.84 грн |
| 10+ | 46.41 грн |
| 50+ | 34.11 грн |
| 100+ | 28.27 грн |
| PHPT60415PYX |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PNP 40V 15A LFPAK56 PWRSO8
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 850mV @ 1.5A, 15A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 80MHz
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.5 W
Grade: Automotive
Qualification: AEC-Q100
Description: TRANS PNP 40V 15A LFPAK56 PWRSO8
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 850mV @ 1.5A, 15A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 80MHz
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.5 W
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2584 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 106.82 грн |
| 10+ | 64.35 грн |
| 50+ | 47.73 грн |
| 100+ | 39.74 грн |
| PMEG045V100EPDAZ |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 45V 10A CFP15
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 37 ns
Technology: Schottky
Capacitance @ Vr, F: 1190pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: CFP15
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 45V 10A CFP15
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 37 ns
Technology: Schottky
Capacitance @ Vr, F: 1190pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: CFP15
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9694 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 68.73 грн |
| 10+ | 46.49 грн |
| 100+ | 36.64 грн |
| 500+ | 25.65 грн |
| 1000+ | 22.13 грн |
| 2000+ | 21.80 грн |
| PMEG10010ELRX |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 100V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.7 ns
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 nA @ 100 V
Description: DIODE SCHOTTKY 100V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.7 ns
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 nA @ 100 V
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В кошику
од. на суму грн.
| PMEG10020AELPX |
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Виробник: Nexperia USA Inc.
Description: DIODE SCHOTT 100V 2A SOD128/CFP5
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 135pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 2 A
Current - Reverse Leakage @ Vr: 300 nA @ 100 V
Description: DIODE SCHOTT 100V 2A SOD128/CFP5
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 135pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 2 A
Current - Reverse Leakage @ Vr: 300 nA @ 100 V
на замовлення 9918 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 21.53 грн |
| 22+ | 14.67 грн |
| 100+ | 12.06 грн |
| 500+ | 9.95 грн |
| 1000+ | 8.87 грн |
| PMEG10020ELRX |
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Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 100V 2A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.7 ns
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 nA @ 100 V
Description: DIODE SCHOTTKY 100V 2A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.7 ns
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 nA @ 100 V
на замовлення 1538 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 37.26 грн |
| 15+ | 22.25 грн |
| 50+ | 16.08 грн |
| 100+ | 13.19 грн |
| PMEG10030ELPX |
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Виробник: Nexperia USA Inc.
Description: DIODE SCHOTT 100V 3A SOD128/CFP5
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8 ns
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 3 A
Current - Reverse Leakage @ Vr: 450 nA @ 100 V
Description: DIODE SCHOTT 100V 3A SOD128/CFP5
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8 ns
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 3 A
Current - Reverse Leakage @ Vr: 450 nA @ 100 V
на замовлення 452681 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 76.18 грн |
| 10+ | 45.45 грн |
| 50+ | 33.36 грн |
| 100+ | 27.62 грн |
| PMEG2020EPASX |
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Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 20V 2A DFN2020D-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Schottky
Capacitance @ Vr, F: 175pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN2020D-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 2 A
Current - Reverse Leakage @ Vr: 1.9 mA @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 20V 2A DFN2020D-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Schottky
Capacitance @ Vr, F: 175pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN2020D-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 2 A
Current - Reverse Leakage @ Vr: 1.9 mA @ 20 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6828 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 48.86 грн |
| 11+ | 29.34 грн |
| 100+ | 18.86 грн |
| 500+ | 13.42 грн |
| 1000+ | 12.04 грн |
| PMEG3010AESBYL |
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Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 30V 1A DSN1006-2
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.5 ns
Technology: Schottky
Capacitance @ Vr, F: 86pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DSN1006-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A
Current - Reverse Leakage @ Vr: 255 µA @ 20 V
Description: DIODE SCHOTTKY 30V 1A DSN1006-2
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.5 ns
Technology: Schottky
Capacitance @ Vr, F: 86pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DSN1006-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A
Current - Reverse Leakage @ Vr: 255 µA @ 20 V
на замовлення 1376 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 28.98 грн |
| 19+ | 17.30 грн |
| 50+ | 12.42 грн |
| 100+ | 10.17 грн |
| PMEG4010AESBYL |
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Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 40V 1A DSN1006-2
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.1 ns
Technology: Schottky
Capacitance @ Vr, F: 75pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DSN1006-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 505 mV @ 1 A
Current - Reverse Leakage @ Vr: 1.25 mA @ 40 V
Description: DIODE SCHOTTKY 40V 1A DSN1006-2
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.1 ns
Technology: Schottky
Capacitance @ Vr, F: 75pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DSN1006-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 505 mV @ 1 A
Current - Reverse Leakage @ Vr: 1.25 mA @ 40 V
товару немає в наявності
В кошику
од. на суму грн.

















