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BUK7M8R0-40EX BUK7M8R0-40EX Nexperia USA Inc. BUK7M8R0-40E.pdf Description: MOSFET N-CH 40V 69A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1567 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BUK9M10-30EX BUK9M10-30EX Nexperia USA Inc. BUK9M10-30E.pdf Description: MOSFET N-CH 30V 54A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 15A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1249 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BUK9M11-40EX BUK9M11-40EX Nexperia USA Inc. BUK9M11-40E.pdf Description: MOSFET N-CH 40V 53A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1721 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BUK9M120-100EX BUK9M120-100EX Nexperia USA Inc. BUK9M120-100E.pdf Description: MOSFET N-CH 100V 11.5A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 119mOhm @ 5A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 2.05V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 882 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BUK9M12-60EX BUK9M12-60EX Nexperia USA Inc. BUK9M12-60E.pdf Description: MOSFET N-CH 60V 54A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 2769 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BUK9M14-40EX BUK9M14-40EX Nexperia USA Inc. BUK9M14-40E.pdf Description: MOSFET N-CH 40V 44A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1211 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BUK9M15-60EX BUK9M15-60EX Nexperia USA Inc. BUK9M15-60E.pdf Description: MOSFET N-CH 60V 47A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.45V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BUK9M156-100EX BUK9M156-100EX Nexperia USA Inc. BUK9M156-100E.pdf Description: MOSFET N-CH 100V 9.3A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 695 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BUK9M17-30EX BUK9M17-30EX Nexperia USA Inc. BUK9M17-30E.pdf Description: MOSFET N-CH 30V 37A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 725 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BUK9M23-80EX BUK9M23-80EX Nexperia USA Inc. BUK9M23-80E.pdf Description: MOSFET N-CH 80V 37A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2808 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BUK9M24-60EX BUK9M24-60EX Nexperia USA Inc. BUK9M24-60E.pdf Description: MOSFET N-CH 60V 32A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1469 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BUK9M34-100EX BUK9M34-100EX Nexperia USA Inc. BUK9M34-100E.pdf Description: MOSFET N-CH 100V 29A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BUK9M35-80EX BUK9M35-80EX Nexperia USA Inc. BUK9M35-80E.pdf Description: MOSFET N-CH 80V 26A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1804 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+20.23 грн
Мінімальне замовлення: 1500
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BUK9M42-60EX BUK9M42-60EX Nexperia USA Inc. BUK9M42-60E.pdf Description: MOSFET N-CH 60V 22A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 5A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+15.21 грн
Мінімальне замовлення: 1500
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BUK9M52-40EX BUK9M52-40EX Nexperia USA Inc. BUK9M52-40E.pdf Description: MOSFET N-CH 40V 17.6A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.6A (Tj)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Power Dissipation (Max): 31W
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 407 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BUK9M53-60EX BUK9M53-60EX Nexperia USA Inc. BUK9M53-60E.pdf Description: MOSFET N-CH 60V 17A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1500+19.93 грн
3000+16.63 грн
Мінімальне замовлення: 1500
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BUK9M85-60EX BUK9M85-60EX Nexperia USA Inc. BUK9M85-60E.pdf Description: MOSFET N-CH 60V 12.8A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc)
Rds On (Max) @ Id, Vgs: 73mOhm @ 5A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 434 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+13.64 грн
Мінімальне замовлення: 1500
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BUK9M9R1-40EX BUK9M9R1-40EX Nexperia USA Inc. BUK9M9R1-40E.pdf Description: MOSFET N-CH 40V 64A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2048 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1500+26.46 грн
3000+24.35 грн
Мінімальне замовлення: 1500
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IP4855CX25/CAZ Nexperia USA Inc. IP4855CX25.pdf Description: IC INTFACE SPECIALIZED 25WLCSP
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IP4855CX25Z Nexperia USA Inc. IP4855CX25.pdf Description: IC INTFACE SPECIALIZED 25WLCSP
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NCR401TR NCR401TR Nexperia USA Inc. NCR401T.pdf Description: IC LED DRVR LINEAR 10MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Voltage - Output: 16V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -55°C ~ 150°C (TA)
Current - Output / Channel: 10mA
Internal Switch(s): Yes
Supplier Device Package: TO-236AB
Voltage - Supply (Max): 18V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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NCR402TR NCR402TR Nexperia USA Inc. NCR402T.pdf Description: IC LED DRVR LINEAR 20MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Voltage - Output: 16V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -55°C ~ 150°C (TA)
Current - Output / Channel: 20mA
Internal Switch(s): Yes
Supplier Device Package: TO-236AB
Voltage - Supply (Max): 18V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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NX138BKR NX138BKR Nexperia USA Inc. NX138BK.pdf Description: MOSFET N-CH 60V 265MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 265mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 10V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.49 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 20.2 pF @ 30 V
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NX7002BKR NX7002BKR Nexperia USA Inc. NX7002BK.pdf Description: MOSFET N-CH 60V 270MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.6 pF @ 10 V
на замовлення 1522 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
NX7002BKSX NX7002BKSX Nexperia USA Inc. NX7002BKS.pdf Description: MOSFET N-CH 60V 270MA 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 6-TSSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.6 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+3.61 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NX7002BKWX NX7002BKWX Nexperia USA Inc. NX7002BKW.pdf Description: MOSFET N-CH 60V 270MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.6 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
PBHV8515QAZ PBHV8515QAZ Nexperia USA Inc. PBHV8515QA.pdf Description: TRANS NPN 150V 0.5A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 60mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 200mA, 10V
Frequency - Transition: 75MHz
Supplier Device Package: DFN1010D-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 325 mW
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
PBHV9515QAZ PBHV9515QAZ Nexperia USA Inc. PBHV9515QA.pdf Description: TRANS PNP 150V 0.5A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 200mA, 10V
Frequency - Transition: 75MHz
Supplier Device Package: DFN1010D-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 325 mW
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
PBSS4160DSH PBSS4160DSH Nexperia USA Inc. PBSS4160DS.pdf Description: TRANS 2NPN 60V 870MA 6-TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 290mW
Current - Collector (Ic) (Max): 870mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Frequency - Transition: 220MHz
Supplier Device Package: 6-TSOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+8.78 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
PBSS4220PANSX PBSS4220PANSX Nexperia USA Inc. PBSS4220PANS.pdf Description: TRANS 2NPN 20V 2A DFN2020D-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 370mW
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 120MHz
Supplier Device Package: DFN2020D-6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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В кошику  од. на суму  грн.
PBSS4260PANPSX PBSS4260PANPSX Nexperia USA Inc. PBSS4260PANPS.pdf Description: TRANS NPN/PNP 60V 2A DFN2020D-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 370mW
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: DFN2020D-6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
PBSS4260PANSX PBSS4260PANSX Nexperia USA Inc. PBSS4260PANS.pdf Description: TRANS 2NPN 60V 2A DFN2020D-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 370mW
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: DFN2020D-6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
PBSS4360PASX PBSS4360PASX Nexperia USA Inc. PBSS4360PAS.pdf Description: TRANS NPN 60V 3A DFN2020D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 325mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 5V
Frequency - Transition: 160MHz
Supplier Device Package: DFN2020D-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 600 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+12.61 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
PBSS5220PAPSX PBSS5220PAPSX Nexperia USA Inc. PBSS5220PAPS.pdf Description: TRANS 2PNP 20V 2A DFN2020D-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 370mW
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 390mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V
Frequency - Transition: 95MHz
Supplier Device Package: DFN2020D-6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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В кошику  од. на суму  грн.
PBSS5260PAPSX PBSS5260PAPSX Nexperia USA Inc. PBSS5260PAPS.pdf Description: TRANS 2PNP 60V 2A DFN2020D-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 370mW
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: DFN2020D-6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
PDTA123JQAZ PDTA123JQAZ Nexperia USA Inc. PDTA143X_123J_134Z_114YQA_SER.pdf Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1010D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 280 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
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В кошику  од. на суму  грн.
PDTA124EQAZ PDTA124EQAZ Nexperia USA Inc. PDTA143_114_124_144EQA_SER.pdf Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Supplier Device Package: DFN1010D-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 280 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
товару немає в наявності
В кошику  од. на суму  грн.
PDTA143EQAZ PDTA143EQAZ Nexperia USA Inc. PDTA143_114_124_144EQA_SER.pdf Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: DFN1010D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 280 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
товару немає в наявності
В кошику  од. на суму  грн.
PDTA143XQAZ PDTA143XQAZ Nexperia USA Inc. PDTA143X_123J_134Z_114YQA_SER.pdf Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: DFN1010D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 280 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
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В кошику  од. на суму  грн.
PDTA143ZQAZ PDTA143ZQAZ Nexperia USA Inc. PDTA143X_123J_134Z_114YQA_SER.pdf Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1010D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 280 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
товару немає в наявності
В кошику  од. на суму  грн.
PDTB113ZQAZ PDTB113ZQAZ Nexperia USA Inc. PDTB113Z_123Y_143XQA_SER.pdf Description: TRANS PREBIAS PNP 3DFN
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В кошику  од. на суму  грн.
PDTC114EQAZ PDTC114EQAZ Nexperia USA Inc. PDTC143_114_124_144EQA_SER.pdf Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: DFN1010D-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 280 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
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В кошику  од. на суму  грн.
PDTC124EQAZ PDTC124EQAZ Nexperia USA Inc. PDTC143_114_124_144EQA_SER.pdf Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Supplier Device Package: DFN1010D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 280 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
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В кошику  од. на суму  грн.
PDTC143XQAZ PDTC143XQAZ Nexperia USA Inc. PDTC143X_123J_143Z_114YQA_SER.pdf Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: DFN1010D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 280 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
товару немає в наявності
В кошику  од. на суму  грн.
PDTD143EQAZ PDTD143EQAZ Nexperia USA Inc. PDTD113_123_143_114EQA_SER.pdf Description: TRANS PREBIAS NPN 50V 0.5A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
Supplier Device Package: DFN1010D-3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 325 mW
Frequency - Transition: 210 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
товару немає в наявності
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PESD24VF1BSFYL PESD24VF1BSFYL Nexperia USA Inc. PESD24VF1BSF.pdf Description: TVS DIODE 24VWM 17VC DSN0603-2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: DSN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.5V
Voltage - Clamping (Max) @ Ipp: 17V
Power Line Protection: No
Part Status: Active
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В кошику  од. на суму  грн.
PESD2ETH-AXR PESD2ETH-AXR Nexperia USA Inc. PESD2ETH-AX.pdf Description: TVS DIODE 5.5VWM SOT143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Ethernet
Capacitance @ Frequency: 16pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOT-143B
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power Line Protection: Yes
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
3000+11.20 грн
6000+10.36 грн
9000+10.00 грн
15000+9.29 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
PESD2IVN-UX PESD2IVN-UX Nexperia USA Inc. PESD2IVN-U.pdf Description: TVS DIODE 26.5VWM 53VC SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: CAN
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 26.5V (Max)
Supplier Device Package: SOT-323
Bidirectional Channels: 2
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 53V
Power - Peak Pulse: 150W
Power Line Protection: No
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+7.23 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
PESD2USB30Z PESD2USB30Z Nexperia USA Inc. PESDXUSB30_SER.pdf Description: TVS DIODE 5.5VWM 10WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 10-UFBGA, WLCSP
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 85°C (TA)
Applications: HDMI
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 10-WLCSP (1.57x1.17)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Power Line Protection: No
Part Status: Active
товару немає в наявності
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PESD3USB30Z PESD3USB30Z Nexperia USA Inc. PESDxUSB30.pdf Description: TVS DIODE 5.5V 15WLCSP
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PESD3V3C1BSFYL PESD3V3C1BSFYL Nexperia USA Inc. PESD3V3C1BSF.pdf Description: TVS DIODE 3.3VWM 5.5VC DSN0603-2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: DSN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 5.5V
Power Line Protection: No
Part Status: Active
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
9000+3.29 грн
18000+3.10 грн
27000+3.06 грн
Мінімальне замовлення: 9000
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PESD3V3X1BCSFYL PESD3V3X1BCSFYL Nexperia USA Inc. PESD3V3X1BCSF.pdf Description: TVS DIODE 3.3VWM 5.5VC DSN0603-2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 1.1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: DSN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 5.5V
Power Line Protection: No
Part Status: Active
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PESD5V0H1BSFYL PESD5V0H1BSFYL Nexperia USA Inc. PESD5V0H1BSF.pdf Description: TVS DIODE 5VWM 5VC DSN0603-2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DSN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 5V
Power Line Protection: No
Part Status: Active
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PESD5V0V2BMYL PESD5V0V2BMYL Nexperia USA Inc. PESD5V0V2BM.pdf Description: TVS DIODE 5VWM 12.5VC SOT883
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 18pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-883
Bidirectional Channels: 2
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 12.5V
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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PESD5V0X1BCSFYL PESD5V0X1BCSFYL Nexperia USA Inc. PESD5V0X1BCSF.pdf Description: TVS DIODE 5VWM 5.5VC DSN0603-2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 1.1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DSN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 5.5V
Power Line Protection: No
Part Status: Active
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PMBT2222AYSX PMBT2222AYSX Nexperia USA Inc. PMBT2222AYS.pdf Description: TRANS 2NPN 40V 600MA 6-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: 6-TSSOP
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Power - Max: 550mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+4.43 грн
Мінімальне замовлення: 3000
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PMBT2907AYSX PMBT2907AYSX Nexperia USA Inc. PMBT2907AYS.pdf Description: TRANS 2PNP 60V 600MA 6-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: 6-TSSOP
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 250 mW
Power - Max: 550mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+3.53 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
PMBT4401YSX PMBT4401YSX Nexperia USA Inc. PMBT4401YS.pdf Description: TRANS NPN 40V 0.6A TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+4.02 грн
Мінімальне замовлення: 3000
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PMCM4401VNEAZ PMCM4401VNEAZ Nexperia USA Inc. PMCM4401VNE.pdf Description: MOSFET N-CH 12V 4.7A 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 4.5V
Power Dissipation (Max): 400mW (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-WLCSP (0.78x0.78)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 6 V
на замовлення 81000 шт:
термін постачання 21-31 дні (днів)
9000+7.75 грн
18000+7.38 грн
27000+7.27 грн
45000+6.75 грн
63000+6.63 грн
Мінімальне замовлення: 9000
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PMCM4401VPEZ PMCM4401VPEZ Nexperia USA Inc. PMCM4401VPE.pdf Description: MOSFET P-CH 12V 3.9A 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
Power Dissipation (Max): 400mW (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-WLCSP (0.78x0.78)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 6 V
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BUK7M8R0-40EX BUK7M8R0-40E.pdf
BUK7M8R0-40EX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 69A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1567 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BUK9M10-30EX BUK9M10-30E.pdf
BUK9M10-30EX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 54A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 15A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1249 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BUK9M11-40EX BUK9M11-40E.pdf
BUK9M11-40EX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 53A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1721 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BUK9M120-100EX BUK9M120-100E.pdf
BUK9M120-100EX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 11.5A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 119mOhm @ 5A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 2.05V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 882 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BUK9M12-60EX BUK9M12-60E.pdf
BUK9M12-60EX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 54A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 2769 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BUK9M14-40EX BUK9M14-40E.pdf
BUK9M14-40EX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 44A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1211 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BUK9M15-60EX BUK9M15-60E.pdf
BUK9M15-60EX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 47A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.45V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BUK9M156-100EX BUK9M156-100E.pdf
BUK9M156-100EX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 9.3A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 695 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BUK9M17-30EX BUK9M17-30E.pdf
BUK9M17-30EX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 37A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 725 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BUK9M23-80EX BUK9M23-80E.pdf
BUK9M23-80EX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 80V 37A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2808 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BUK9M24-60EX BUK9M24-60E.pdf
BUK9M24-60EX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 32A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1469 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BUK9M34-100EX BUK9M34-100E.pdf
BUK9M34-100EX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 29A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BUK9M35-80EX BUK9M35-80E.pdf
BUK9M35-80EX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 80V 26A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1804 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+20.23 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
BUK9M42-60EX BUK9M42-60E.pdf
BUK9M42-60EX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 22A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 5A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+15.21 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
BUK9M52-40EX BUK9M52-40E.pdf
BUK9M52-40EX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 17.6A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.6A (Tj)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Power Dissipation (Max): 31W
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 407 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BUK9M53-60EX BUK9M53-60E.pdf
BUK9M53-60EX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 17A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+19.93 грн
3000+16.63 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
BUK9M85-60EX BUK9M85-60E.pdf
BUK9M85-60EX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 12.8A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc)
Rds On (Max) @ Id, Vgs: 73mOhm @ 5A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 434 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+13.64 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
BUK9M9R1-40EX BUK9M9R1-40E.pdf
BUK9M9R1-40EX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 64A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2048 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+26.46 грн
3000+24.35 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
IP4855CX25/CAZ IP4855CX25.pdf
Виробник: Nexperia USA Inc.
Description: IC INTFACE SPECIALIZED 25WLCSP
товару немає в наявності
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IP4855CX25Z IP4855CX25.pdf
Виробник: Nexperia USA Inc.
Description: IC INTFACE SPECIALIZED 25WLCSP
товару немає в наявності
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NCR401TR NCR401T.pdf
NCR401TR
Виробник: Nexperia USA Inc.
Description: IC LED DRVR LINEAR 10MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Voltage - Output: 16V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -55°C ~ 150°C (TA)
Current - Output / Channel: 10mA
Internal Switch(s): Yes
Supplier Device Package: TO-236AB
Voltage - Supply (Max): 18V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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NCR402TR NCR402T.pdf
NCR402TR
Виробник: Nexperia USA Inc.
Description: IC LED DRVR LINEAR 20MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Voltage - Output: 16V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -55°C ~ 150°C (TA)
Current - Output / Channel: 20mA
Internal Switch(s): Yes
Supplier Device Package: TO-236AB
Voltage - Supply (Max): 18V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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NX138BKR NX138BK.pdf
NX138BKR
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 265MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 265mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 10V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.49 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 20.2 pF @ 30 V
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NX7002BKR NX7002BK.pdf
NX7002BKR
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 270MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.6 pF @ 10 V
на замовлення 1522 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
NX7002BKSX NX7002BKS.pdf
NX7002BKSX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 270MA 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 6-TSSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.6 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+3.61 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NX7002BKWX NX7002BKW.pdf
NX7002BKWX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 270MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.6 pF @ 10 V
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PBHV8515QAZ PBHV8515QA.pdf
PBHV8515QAZ
Виробник: Nexperia USA Inc.
Description: TRANS NPN 150V 0.5A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 60mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 200mA, 10V
Frequency - Transition: 75MHz
Supplier Device Package: DFN1010D-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 325 mW
Grade: Automotive
Qualification: AEC-Q101
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PBHV9515QAZ PBHV9515QA.pdf
PBHV9515QAZ
Виробник: Nexperia USA Inc.
Description: TRANS PNP 150V 0.5A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 200mA, 10V
Frequency - Transition: 75MHz
Supplier Device Package: DFN1010D-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 325 mW
Grade: Automotive
Qualification: AEC-Q101
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PBSS4160DSH PBSS4160DS.pdf
PBSS4160DSH
Виробник: Nexperia USA Inc.
Description: TRANS 2NPN 60V 870MA 6-TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 290mW
Current - Collector (Ic) (Max): 870mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Frequency - Transition: 220MHz
Supplier Device Package: 6-TSOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+8.78 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
PBSS4220PANSX PBSS4220PANS.pdf
PBSS4220PANSX
Виробник: Nexperia USA Inc.
Description: TRANS 2NPN 20V 2A DFN2020D-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 370mW
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 120MHz
Supplier Device Package: DFN2020D-6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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PBSS4260PANPSX PBSS4260PANPS.pdf
PBSS4260PANPSX
Виробник: Nexperia USA Inc.
Description: TRANS NPN/PNP 60V 2A DFN2020D-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 370mW
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: DFN2020D-6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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PBSS4260PANSX PBSS4260PANS.pdf
PBSS4260PANSX
Виробник: Nexperia USA Inc.
Description: TRANS 2NPN 60V 2A DFN2020D-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 370mW
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: DFN2020D-6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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PBSS4360PASX PBSS4360PAS.pdf
PBSS4360PASX
Виробник: Nexperia USA Inc.
Description: TRANS NPN 60V 3A DFN2020D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 325mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 5V
Frequency - Transition: 160MHz
Supplier Device Package: DFN2020D-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 600 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+12.61 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
PBSS5220PAPSX PBSS5220PAPS.pdf
PBSS5220PAPSX
Виробник: Nexperia USA Inc.
Description: TRANS 2PNP 20V 2A DFN2020D-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 370mW
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 390mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V
Frequency - Transition: 95MHz
Supplier Device Package: DFN2020D-6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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PBSS5260PAPSX PBSS5260PAPS.pdf
PBSS5260PAPSX
Виробник: Nexperia USA Inc.
Description: TRANS 2PNP 60V 2A DFN2020D-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 370mW
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: DFN2020D-6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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PDTA123JQAZ PDTA143X_123J_134Z_114YQA_SER.pdf
PDTA123JQAZ
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1010D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 280 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
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PDTA124EQAZ PDTA143_114_124_144EQA_SER.pdf
PDTA124EQAZ
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Supplier Device Package: DFN1010D-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 280 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
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PDTA143EQAZ PDTA143_114_124_144EQA_SER.pdf
PDTA143EQAZ
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: DFN1010D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 280 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
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PDTA143XQAZ PDTA143X_123J_134Z_114YQA_SER.pdf
PDTA143XQAZ
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: DFN1010D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 280 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
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PDTA143ZQAZ PDTA143X_123J_134Z_114YQA_SER.pdf
PDTA143ZQAZ
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1010D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 280 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
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PDTB113ZQAZ PDTB113Z_123Y_143XQA_SER.pdf
PDTB113ZQAZ
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 3DFN
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PDTC114EQAZ PDTC143_114_124_144EQA_SER.pdf
PDTC114EQAZ
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: DFN1010D-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 280 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
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PDTC124EQAZ PDTC143_114_124_144EQA_SER.pdf
PDTC124EQAZ
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Supplier Device Package: DFN1010D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 280 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
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PDTC143XQAZ PDTC143X_123J_143Z_114YQA_SER.pdf
PDTC143XQAZ
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: DFN1010D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 280 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
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PDTD143EQAZ PDTD113_123_143_114EQA_SER.pdf
PDTD143EQAZ
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.5A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
Supplier Device Package: DFN1010D-3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 325 mW
Frequency - Transition: 210 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
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PESD24VF1BSFYL PESD24VF1BSF.pdf
PESD24VF1BSFYL
Виробник: Nexperia USA Inc.
Description: TVS DIODE 24VWM 17VC DSN0603-2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: DSN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.5V
Voltage - Clamping (Max) @ Ipp: 17V
Power Line Protection: No
Part Status: Active
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PESD2ETH-AXR PESD2ETH-AX.pdf
PESD2ETH-AXR
Виробник: Nexperia USA Inc.
Description: TVS DIODE 5.5VWM SOT143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Ethernet
Capacitance @ Frequency: 16pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOT-143B
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power Line Protection: Yes
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+11.20 грн
6000+10.36 грн
9000+10.00 грн
15000+9.29 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
PESD2IVN-UX PESD2IVN-U.pdf
PESD2IVN-UX
Виробник: Nexperia USA Inc.
Description: TVS DIODE 26.5VWM 53VC SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: CAN
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 26.5V (Max)
Supplier Device Package: SOT-323
Bidirectional Channels: 2
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 53V
Power - Peak Pulse: 150W
Power Line Protection: No
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+7.23 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
PESD2USB30Z PESDXUSB30_SER.pdf
PESD2USB30Z
Виробник: Nexperia USA Inc.
Description: TVS DIODE 5.5VWM 10WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 10-UFBGA, WLCSP
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 85°C (TA)
Applications: HDMI
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 10-WLCSP (1.57x1.17)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Power Line Protection: No
Part Status: Active
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PESD3USB30Z PESDxUSB30.pdf
PESD3USB30Z
Виробник: Nexperia USA Inc.
Description: TVS DIODE 5.5V 15WLCSP
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PESD3V3C1BSFYL PESD3V3C1BSF.pdf
PESD3V3C1BSFYL
Виробник: Nexperia USA Inc.
Description: TVS DIODE 3.3VWM 5.5VC DSN0603-2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: DSN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 5.5V
Power Line Protection: No
Part Status: Active
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9000+3.29 грн
18000+3.10 грн
27000+3.06 грн
Мінімальне замовлення: 9000
В кошику  од. на суму  грн.
PESD3V3X1BCSFYL PESD3V3X1BCSF.pdf
PESD3V3X1BCSFYL
Виробник: Nexperia USA Inc.
Description: TVS DIODE 3.3VWM 5.5VC DSN0603-2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 1.1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: DSN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 5.5V
Power Line Protection: No
Part Status: Active
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PESD5V0H1BSFYL PESD5V0H1BSF.pdf
PESD5V0H1BSFYL
Виробник: Nexperia USA Inc.
Description: TVS DIODE 5VWM 5VC DSN0603-2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DSN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 5V
Power Line Protection: No
Part Status: Active
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PESD5V0V2BMYL PESD5V0V2BM.pdf
PESD5V0V2BMYL
Виробник: Nexperia USA Inc.
Description: TVS DIODE 5VWM 12.5VC SOT883
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 18pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-883
Bidirectional Channels: 2
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 12.5V
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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PESD5V0X1BCSFYL PESD5V0X1BCSF.pdf
PESD5V0X1BCSFYL
Виробник: Nexperia USA Inc.
Description: TVS DIODE 5VWM 5.5VC DSN0603-2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 1.1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DSN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 5.5V
Power Line Protection: No
Part Status: Active
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PMBT2222AYSX PMBT2222AYS.pdf
PMBT2222AYSX
Виробник: Nexperia USA Inc.
Description: TRANS 2NPN 40V 600MA 6-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: 6-TSSOP
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Power - Max: 550mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+4.43 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
PMBT2907AYSX PMBT2907AYS.pdf
PMBT2907AYSX
Виробник: Nexperia USA Inc.
Description: TRANS 2PNP 60V 600MA 6-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: 6-TSSOP
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 250 mW
Power - Max: 550mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+3.53 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
PMBT4401YSX PMBT4401YS.pdf
PMBT4401YSX
Виробник: Nexperia USA Inc.
Description: TRANS NPN 40V 0.6A TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+4.02 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
PMCM4401VNEAZ PMCM4401VNE.pdf
PMCM4401VNEAZ
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 12V 4.7A 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 4.5V
Power Dissipation (Max): 400mW (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-WLCSP (0.78x0.78)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 6 V
на замовлення 81000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9000+7.75 грн
18000+7.38 грн
27000+7.27 грн
45000+6.75 грн
63000+6.63 грн
Мінімальне замовлення: 9000
В кошику  од. на суму  грн.
PMCM4401VPEZ PMCM4401VPE.pdf
PMCM4401VPEZ
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 12V 3.9A 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
Power Dissipation (Max): 400mW (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-WLCSP (0.78x0.78)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 6 V
товару немає в наявності
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