Продукція > NEXPERIA USA INC. > Всі товари виробника NEXPERIA USA INC. (31403) > Сторінка 142 з 524
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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BZX79-B15,113 | Nexperia USA Inc. |
Description: DIODE ZENER 15V 400MW ALF2Impedance (Max) (Zzt): 30 Ohms Voltage - Zener (Nom) (Vz): 15 V Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±2% Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 400 mW Part Status: Active Supplier Device Package: ALF2 |
на замовлення 370 шт: термін постачання 21-31 дні (днів) |
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BZX79-B16,113 | Nexperia USA Inc. |
Description: DIODE ZENER 16V 400MW ALF2Packaging: Cut Tape (CT) Tolerance: ±2% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 16 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: ALF2 Part Status: Active Power - Max: 400 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V |
на замовлення 6100 шт: термін постачання 21-31 дні (днів) |
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BZX84J-B10,115 | Nexperia USA Inc. |
Description: DIODE ZENER 10V 550MW SOD323FQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 200 nA @ 7 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Power - Max: 550 mW Part Status: Active Supplier Device Package: SOD-323F Impedance (Max) (Zzt): 10 Ohms Voltage - Zener (Nom) (Vz): 10 V Operating Temperature: -65°C ~ 150°C (TA) Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Tolerance: ±2% Packaging: Cut Tape (CT) |
на замовлення 2950 шт: термін постачання 21-31 дні (днів) |
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MMBZ18VCL,215 | Nexperia USA Inc. |
Description: TVS DIODE 14.5VWM 25VC TO236ABPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TA) Capacitance @ Frequency: 70pF @ 1MHz Current - Peak Pulse (10/1000µs): 1.6A Voltage - Reverse Standoff (Typ): 14.5V (Max) Supplier Device Package: TO-236AB Unidirectional Channels: 2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 17.1V Voltage - Clamping (Max) @ Ipp: 25V Power - Peak Pulse: 40W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1450 шт: термін постачання 21-31 дні (днів) |
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NCR401TR | Nexperia USA Inc. |
Description: IC LED DRVR LINEAR 10MA TO236ABPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Voltage - Output: 16V Mounting Type: Surface Mount Number of Outputs: 1 Type: Linear Operating Temperature: -55°C ~ 150°C (TA) Current - Output / Channel: 10mA Internal Switch(s): Yes Supplier Device Package: TO-236AB Voltage - Supply (Max): 18V Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 130 шт: термін постачання 21-31 дні (днів) |
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NCR402TR | Nexperia USA Inc. |
Description: IC LED DRVR LINEAR 20MA TO236ABPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Voltage - Output: 16V Mounting Type: Surface Mount Number of Outputs: 1 Type: Linear Operating Temperature: -55°C ~ 150°C (TA) Current - Output / Channel: 20mA Internal Switch(s): Yes Supplier Device Package: TO-236AB Voltage - Supply (Max): 18V Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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NX138BKR | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 265MA TO236ABInput Capacitance (Ciss) (Max) @ Vds: 20.2 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 0.49 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Supplier Device Package: TO-236AB Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 310mW (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 10V Current - Continuous Drain (Id) @ 25°C: 265mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NX7002BKR | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 270MA TO236ABPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 270mA (Ta) Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V Power Dissipation (Max): 310mW (Ta), 1.67W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23.6 pF @ 10 V |
на замовлення 1530 шт: термін постачання 21-31 дні (днів) |
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NX7002BKSX | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 270MA 6TSSOPPackaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 270mA (Ta) Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V Power Dissipation (Max): 310mW (Ta), 1.67W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 6-TSSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23.6 pF @ 10 V |
на замовлення 9028 шт: термін постачання 21-31 дні (днів) |
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NX7002BKWX | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 270MA SOT323Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 270mA (Ta) Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V Power Dissipation (Max): 310mW (Ta), 1.67W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23.6 pF @ 10 V |
на замовлення 10574 шт: термін постачання 21-31 дні (днів) |
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PBHV8515QAZ | Nexperia USA Inc. |
Description: TRANS NPN 150V 0.5A DFN1010D-3Power - Max: 325 mW Voltage - Collector Emitter Breakdown (Max): 150 V Current - Collector (Ic) (Max): 500 mA Part Status: Active Supplier Device Package: DFN1010D-3 Frequency - Transition: 75MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 200mA, 10V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 60mV @ 5mA, 50mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: 3-XDFN Exposed Pad Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 4269 шт: термін постачання 21-31 дні (днів) |
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PBSS4160DSH | Nexperia USA Inc. |
Description: TRANS 2NPN 60V 870MA 6-TSOPPackaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 150°C (TJ) Power - Max: 290mW Current - Collector (Ic) (Max): 870mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V Frequency - Transition: 220MHz Supplier Device Package: 6-TSOP Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2864 шт: термін постачання 21-31 дні (днів) |
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PEMZ7,115 | Nexperia USA Inc. |
Description: TRANS NPN/PNP 12V 500MA SOT-666Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: 150°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 12V Vce Saturation (Max) @ Ib, Ic: 220mV @ 10mA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V Frequency - Transition: 420MHz, 280MHz Supplier Device Package: SOT-666 Part Status: Not For New Designs |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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PESD2ETH-AXR | Nexperia USA Inc. |
Description: TVS DIODE 5.5VWM SOT143BPackaging: Cut Tape (CT) Package / Case: TO-253-4, TO-253AA Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -40°C ~ 125°C (TA) Applications: Ethernet Capacitance @ Frequency: 16pF @ 1MHz Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: SOT-143B Unidirectional Channels: 2 Voltage - Breakdown (Min): 6V Power Line Protection: Yes Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
на замовлення 19735 шт: термін постачання 21-31 дні (днів) |
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PESD2IVN-UX | Nexperia USA Inc. |
Description: TVS DIODE 26.5VWM 53VC SOT323Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TA) Applications: CAN Capacitance @ Frequency: 8.5pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 26.5V (Max) Supplier Device Package: SOT-323 Bidirectional Channels: 2 Voltage - Breakdown (Min): 28V Voltage - Clamping (Max) @ Ipp: 53V Power - Peak Pulse: 150W Power Line Protection: No Grade: Automotive Part Status: Not For New Designs Qualification: AEC-Q101 |
на замовлення 5877 шт: термін постачання 21-31 дні (днів) |
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PESD3V3C1BSFYL | Nexperia USA Inc. |
Description: TVS DIODE 3.3VWM 5.5VC DSN0603-2Packaging: Cut Tape (CT) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TA) Applications: General Purpose Capacitance @ Frequency: 0.2pF @ 1MHz Current - Peak Pulse (10/1000µs): 9A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: DSN0603-2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 5.5V Power Line Protection: No Part Status: Active |
на замовлення 29599 шт: термін постачання 21-31 дні (днів) |
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PESD3V3X1BCSFYL | Nexperia USA Inc. |
Description: TVS DIODE 3.3VWM 5.5VC DSN0603-2Packaging: Cut Tape (CT) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TA) Applications: General Purpose Capacitance @ Frequency: 1.1pF @ 1MHz Current - Peak Pulse (10/1000µs): 8A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: DSN0603-2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 5.5V Power Line Protection: No Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PESD5V0H1BSFYL | Nexperia USA Inc. |
Description: TVS DIODE 5VWM 5VC DSN0603-2Packaging: Cut Tape (CT) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TA) Applications: General Purpose Capacitance @ Frequency: 0.15pF @ 1MHz Current - Peak Pulse (10/1000µs): 7A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: DSN0603-2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 5V Power Line Protection: No Part Status: Active |
на замовлення 2152 шт: термін постачання 21-31 дні (днів) |
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PESD5V0V2BMYL | Nexperia USA Inc. |
Description: TVS DIODE 5VWM 12.5VC SOT883Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TA) Capacitance @ Frequency: 18pF @ 1MHz Current - Peak Pulse (10/1000µs): 9A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SOT-883 Bidirectional Channels: 2 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 12.5V Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 7261 шт: термін постачання 21-31 дні (днів) |
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PMBT2222AYSX | Nexperia USA Inc. |
Description: TRANS 2NPN 40V 600MA 6-TSSOPPackaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 150°C (TJ) Power - Max: 550mW Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 10V Frequency - Transition: 300MHz Supplier Device Package: 6-TSSOP Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 250 mW Qualification: AEC-Q101 |
на замовлення 5113 шт: термін постачання 21-31 дні (днів) |
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PMBT2907AYSX | Nexperia USA Inc. |
Description: TRANS 2PNP 60V 600MA 6-TSSOPPackaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: 150°C (TJ) Power - Max: 550mW Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 200MHz Supplier Device Package: 6-TSSOP Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 250 mW Qualification: AEC-Q101 |
на замовлення 11054 шт: термін постачання 21-31 дні (днів) |
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PMBT3904MB,315 | Nexperia USA Inc. |
Description: TRANS NPN 40V 0.2A DFN1006B-3Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 300MHz Supplier Device Package: DFN1006B-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 250 mW Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PMBT4401YSX | Nexperia USA Inc. |
Description: TRANS NPN 40V 0.6A TO-236ABPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 1V Frequency - Transition: 250MHz Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 250 mW Qualification: AEC-Q101 |
на замовлення 3810 шт: термін постачання 21-31 дні (днів) |
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PMBT4403,235 | Nexperia USA Inc. |
Description: TRANS PNP 40V 0.6A TO-236ABPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Frequency - Transition: 200MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 250 mW Grade: Automotive Qualification: AEC-Q101 |
на замовлення 10636 шт: термін постачання 21-31 дні (днів) |
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PMCM4401VNEAZ | Nexperia USA Inc. |
Description: MOSFET N-CH 12V 4.7A 4WLCSPInput Capacitance (Ciss) (Max) @ Vds: 335 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: 4-WLCSP (0.78x0.78) Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 400mW (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFBGA, WLCSP Packaging: Cut Tape (CT) |
на замовлення 85820 шт: термін постачання 21-31 дні (днів) |
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PMCM4401VPEZ | Nexperia USA Inc. |
Description: MOSFET P-CH 12V 3.9A 4WLCSPPackaging: Cut Tape (CT) Package / Case: 4-XFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V Power Dissipation (Max): 400mW (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 4-WLCSP (0.78x0.78) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 6 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PMDPB56XNEAX | Nexperia USA Inc. |
Description: MOSFET 2N-CH 30V 3.1A 6DFNPart Status: Active Supplier Device Package: DFN2020D-6 Vgs(th) (Max) @ Id: 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V Rds On (Max) @ Id, Vgs: 72mOhm @ 3.1A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 256pF @ 15V Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 485mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Cut Tape (CT) Qualification: AEC-Q100 Grade: Automotive |
на замовлення 16558 шт: термін постачання 21-31 дні (днів) |
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PMEG100V080ELPDZ | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 100V 8A CFP15Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10 ns Technology: Schottky Capacitance @ Vr, F: 110pF @ 10V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: CFP15 Operating Temperature - Junction: 175°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 8 A Current - Reverse Leakage @ Vr: 500 nA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 8929 шт: термін постачання 21-31 дні (днів) |
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PMF250XNEX | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 1A SOT323Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 254mOhm @ 900mA, 4.5V Power Dissipation (Max): 342mW (Ta) Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.65 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 81 pF @ 15 V |
на замовлення 8895 шт: термін постачання 21-31 дні (днів) |
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PMF63UNEX | Nexperia USA Inc. |
Description: MOSFET N-CH 20V 2.2A SOT323Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 2A, 4.5V Power Dissipation (Max): 395mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.85 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 289 pF @ 10 V |
на замовлення 1960 шт: термін постачання 21-31 дні (днів) |
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PMGD175XNEX | Nexperia USA Inc. |
Description: MOSFET 2N-CH 30V 0.87A 6TSSOPPackaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 260mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 870mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 81pF @ 15V Rds On (Max) @ Id, Vgs: 252mOhm @ 900mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.65nC @ 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: 6-TSSOP Part Status: Active |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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PMN30UNEX | Nexperia USA Inc. |
Description: MOSFET N-CH 20V 4.8A 6TSOPPackaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 4.8A, 4.5V Power Dissipation (Max): 530mW (Ta), 4.46W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 558 pF @ 10 V |
на замовлення 689 шт: термін постачання 21-31 дні (днів) |
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PMN30UNX | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 4.5A 6TSOPPackaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 4.5V Power Dissipation (Max): 530mW (Ta), 4.46W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 15 V |
на замовлення 3617 шт: термін постачання 21-31 дні (днів) |
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PMN30XPX | Nexperia USA Inc. |
Description: MOSFET P-CH 20V 5.2A 6TSOPPackaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Rds On (Max) @ Id, Vgs: 34mOhm @ 5.2A, 4.5V Power Dissipation (Max): 550mW (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 10 V |
на замовлення 1469 шт: термін постачання 21-31 дні (днів) |
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PMN52XPX | Nexperia USA Inc. |
Description: MOSFET P-CH 20V 3.7A 6TSOPInput Capacitance (Ciss) (Max) @ Vds: 763 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: 6-TSOP Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 530mW (Ta), 4.46W (Tc) Rds On (Max) @ Id, Vgs: 62mOhm @ 3.7A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Packaging: Cut Tape (CT) |
на замовлення 5288 шт: термін постачання 21-31 дні (днів) |
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PMPB10XNEZ | Nexperia USA Inc. |
Description: MOSFET N-CH 20V 9A DFN2020MD-6Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: DFN2020MD-6 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2175 pF @ 10 V |
на замовлення 4846 шт: термін постачання 21-31 дні (днів) |
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PMPB12UNEX | Nexperia USA Inc. |
Description: MOSFET N-CH 20V 11.4A 6DFNVgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: DFN2020MD-6 Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 470mW (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 7.9A, 4.5V Current - Continuous Drain (Id) @ 25°C: 11.4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Package / Case: 6-UDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 2617 шт: термін постачання 21-31 дні (днів) |
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PMPB20XNEAX | Nexperia USA Inc. |
Description: MOSFET N-CH 20V 7.5A DFN2020MD-6Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Grade: Automotive Supplier Device Package: DFN2020MD-6 Vgs(th) (Max) @ Id: 1.25V @ 250µA Power Dissipation (Max): 460mW (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 7.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PMPB95ENEAX | Nexperia USA Inc. |
Description: MOSFET N-CH 80V 2.8A DFN2020MD-6Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 105mOhm @ 2.8A, 10V Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: DFN2020MD-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 504 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PMV42ENER | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 4.4A TO236ABPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 4.4A, 10V Power Dissipation (Max): 500mW (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 281 pF @ 15 V |
на замовлення 2219 шт: термін постачання 21-31 дні (днів) |
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PMV65UNER | Nexperia USA Inc. |
Description: MOSFET N-CH 20V 2.8A TO236ABInput Capacitance (Ciss) (Max) @ Vds: 291 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: TO-236AB Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 490mW (Ta) Rds On (Max) @ Id, Vgs: 73mOhm @ 2.8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 7064 шт: термін постачання 21-31 дні (днів) |
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PQMB11Z | Nexperia USA Inc. |
Description: TRANS PREBIAS 2PNP DFN1010B-6Qualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: DFN1010B-6 Resistor - Emitter Base (R2): 10kOhms Resistor - Base (R1): 10kOhms Frequency - Transition: 180MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Current - Collector Cutoff (Max): 1µA Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 230mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 3140 шт: термін постачання 21-31 дні (днів) |
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PQMD13Z | Nexperia USA Inc. |
Description: TRANS PREBIAS 1NPN 1PNP 50V 6DFNSupplier Device Package: DFN1010B-6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 4.7kOhms Frequency - Transition: 230MHz, 180MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Current - Collector Cutoff (Max): 1µA Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 350mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PQMH11Z | Nexperia USA Inc. |
Description: TRANS PREBIAS 2NPN DFN1010B-6Part Status: Active Supplier Device Package: DFN1010B-6 Resistor - Emitter Base (R2): 10kOhms Resistor - Base (R1): 10kOhms Frequency - Transition: 230MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Current - Collector Cutoff (Max): 1µA Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 230mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PQMH13Z | Nexperia USA Inc. |
Description: TRANS PREBIAS 2NPN DFN1010B-6Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: DFN1010B-6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 4.7kOhms Frequency - Transition: 230MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Current - Collector Cutoff (Max): 1µA Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 230mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PZU12B2A,115 | Nexperia USA Inc. |
Description: DIODE ZENER 12V 320MW SOD323Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Tolerance: ±2% Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 100 nA @ 9 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Power - Max: 320 mW Part Status: Active Supplier Device Package: SOD-323 Impedance (Max) (Zzt): 10 Ohms Voltage - Zener (Nom) (Vz): 12 V Operating Temperature: -55°C ~ 150°C (TA) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TDZ7V5J,115 | Nexperia USA Inc. |
Description: DIODE ZENER 7.5V 500MW SOD323FPackaging: Cut Tape (CT) Tolerance: ±2% Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: SOD-323F Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 1 µA @ 5 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 275 шт: термін постачання 21-31 дні (днів) |
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PMT280ENEAX | Nexperia USA Inc. |
Description: MOSFET N-CH 100V 1.5A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 385mOhm @ 1.5A, 10V Power Dissipation (Max): 770mW (Ta) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: SOT-223 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 50 V Qualification: AEC-Q101 |
на замовлення 576 шт: термін постачання 21-31 дні (днів) |
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NX3008NBKSH | Nexperia USA Inc. |
Description: MOSFET 2N-CH 30V 0.35A 6TSSOPQualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: 6-TSSOP Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 445mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PMV100XPEAR | Nexperia USA Inc. |
Description: MOSFET P-CH 20V 2.4A TO236ABPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 128mOhm @ 2.4A, 4.5V Power Dissipation (Max): 463mW (Ta), 1.9W (Tc) Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 5389 шт: термін постачання 21-31 дні (днів) |
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PMV35EPER | Nexperia USA Inc. |
Description: MOSFET P-CH 30V 5.3A TO236ABPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V Power Dissipation (Max): 480mW (Ta), 1.2W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 793 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PMPB55ENEAX | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 4A DFN2020MD-6Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 56mOhm @ 10A, 10V Power Dissipation (Max): 1.65W (Ta) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: DFN2020MD-6 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 3039 шт: термін постачання 21-31 дні (днів) |
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NX138AKR | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 190MA TO236ABPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 190mA, 10V Power Dissipation (Max): 325mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 30 V |
на замовлення 12 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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NX138AKSX | Nexperia USA Inc. |
Description: MOSFET 2N-CH 60V 0.17A 6TSSOPPart Status: Active Supplier Device Package: 6-TSSOP Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V Rds On (Max) @ Id, Vgs: 4.5Ohm @ 170mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 30V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Drain to Source Voltage (Vdss): 60V Power - Max: 325mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
на замовлення 8317 шт: термін постачання 21-31 дні (днів) |
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PMN40ENEX | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 5.7A 6TSOPPackaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta) Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V Power Dissipation (Max): 530mW (Ta), 4.46W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 294 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NX138BKWX | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 210MA SOT323Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 210mA (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 10V Power Dissipation (Max): 266mW (Ta), 1.33W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 30 V |
на замовлення 6809 шт: термін постачання 21-31 дні (днів) |
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PTVS5V0Z1USKYL | Nexperia USA Inc. |
Description: TVS DIODE 5VWM 12VC DSN1608-2Part Status: Active Power Line Protection: No Power - Peak Pulse: 200W Voltage - Clamping (Max) @ Ipp: 12V Voltage - Breakdown (Min): 6.4V Unidirectional Channels: 1 Supplier Device Package: DSN1608-2 Voltage - Reverse Standoff (Typ): 5V (Max) Current - Peak Pulse (10/1000µs): 20A Capacitance @ Frequency: 1200pF @ 1MHz Applications: General Purpose Operating Temperature: -40°C ~ 125°C (TA) Type: Zener Mounting Type: Surface Mount Package / Case: 0603 (1608 Metric) Packaging: Cut Tape (CT) |
на замовлення 18959 шт: термін постачання 21-31 дні (днів) |
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PTVS15VZ1USKYL | Nexperia USA Inc. |
Description: TVS DIODE 15VWM 27.4VC DSN1608-2Packaging: Cut Tape (CT) Package / Case: 0603 (1608 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TA) Applications: General Purpose Capacitance @ Frequency: 340pF @ 1MHz Current - Peak Pulse (10/1000µs): 7.5A Voltage - Reverse Standoff (Typ): 15V (Max) Supplier Device Package: DSN1608-2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 16.7V Voltage - Clamping (Max) @ Ipp: 27.4V Power - Peak Pulse: 200W Power Line Protection: No Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PTVS18VZ1USKYL | Nexperia USA Inc. |
Description: TVS DIODE 18VWM 32.8VC DSN1608-2Part Status: Active Power Line Protection: No Power - Peak Pulse: 210W Voltage - Clamping (Max) @ Ipp: 32.8V Voltage - Breakdown (Min): 20V Unidirectional Channels: 1 Supplier Device Package: DSN1608-2 Voltage - Reverse Standoff (Typ): 18V (Max) Current - Peak Pulse (10/1000µs): 6.4A Capacitance @ Frequency: 290pF @ 1MHz Applications: General Purpose Operating Temperature: -40°C ~ 125°C (TA) Type: Zener Mounting Type: Surface Mount Package / Case: 0603 (1608 Metric) Packaging: Cut Tape (CT) |
на замовлення 8744 шт: термін постачання 21-31 дні (днів) |
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PTVS26VZ1USKYL | Nexperia USA Inc. |
Description: TVS DIODE 26VWM 46VC DSN1608-2Part Status: Active Power Line Protection: No Power - Peak Pulse: 200W Voltage - Clamping (Max) @ Ipp: 46V Voltage - Breakdown (Min): 28.9V Unidirectional Channels: 1 Supplier Device Package: DSN1608-2 Voltage - Reverse Standoff (Typ): 26V (Max) Current - Peak Pulse (10/1000µs): 4.5A Capacitance @ Frequency: 215pF @ 1MHz Applications: General Purpose Operating Temperature: -40°C ~ 125°C (TA) Type: Zener Mounting Type: Surface Mount Package / Case: 0603 (1608 Metric) Packaging: Cut Tape (CT) |
на замовлення 11125 шт: термін постачання 21-31 дні (днів) |
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| BZX79-B15,113 |
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Виробник: Nexperia USA Inc.
Description: DIODE ZENER 15V 400MW ALF2
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 400 mW
Part Status: Active
Supplier Device Package: ALF2
Description: DIODE ZENER 15V 400MW ALF2
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 400 mW
Part Status: Active
Supplier Device Package: ALF2
на замовлення 370 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 37+ | 8.64 грн |
| 53+ | 5.75 грн |
| 111+ | 2.74 грн |
| BZX79-B16,113 |
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Виробник: Nexperia USA Inc.
Description: DIODE ZENER 16V 400MW ALF2
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V
Description: DIODE ZENER 16V 400MW ALF2
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V
на замовлення 6100 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 25+ | 12.65 грн |
| 41+ | 7.44 грн |
| 100+ | 4.60 грн |
| 500+ | 3.14 грн |
| 1000+ | 2.76 грн |
| 2000+ | 2.44 грн |
| 5000+ | 2.06 грн |
| BZX84J-B10,115 |
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Виробник: Nexperia USA Inc.
Description: DIODE ZENER 10V 550MW SOD323F
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 550 mW
Part Status: Active
Supplier Device Package: SOD-323F
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 10 V
Operating Temperature: -65°C ~ 150°C (TA)
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±2%
Packaging: Cut Tape (CT)
Description: DIODE ZENER 10V 550MW SOD323F
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 550 mW
Part Status: Active
Supplier Device Package: SOD-323F
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 10 V
Operating Temperature: -65°C ~ 150°C (TA)
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±2%
Packaging: Cut Tape (CT)
на замовлення 2950 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 14+ | 22.78 грн |
| 23+ | 13.62 грн |
| 50+ | 9.77 грн |
| 100+ | 7.99 грн |
| MMBZ18VCL,215 |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 14.5VWM 25VC TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 70pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.6A
Voltage - Reverse Standoff (Typ): 14.5V (Max)
Supplier Device Package: TO-236AB
Unidirectional Channels: 2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 14.5VWM 25VC TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 70pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.6A
Voltage - Reverse Standoff (Typ): 14.5V (Max)
Supplier Device Package: TO-236AB
Unidirectional Channels: 2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1450 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 16+ | 19.64 грн |
| 27+ | 11.35 грн |
| 100+ | 7.08 грн |
| 500+ | 4.89 грн |
| 1000+ | 4.31 грн |
| NCR401TR |
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Виробник: Nexperia USA Inc.
Description: IC LED DRVR LINEAR 10MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Voltage - Output: 16V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -55°C ~ 150°C (TA)
Current - Output / Channel: 10mA
Internal Switch(s): Yes
Supplier Device Package: TO-236AB
Voltage - Supply (Max): 18V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: IC LED DRVR LINEAR 10MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Voltage - Output: 16V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -55°C ~ 150°C (TA)
Current - Output / Channel: 10mA
Internal Switch(s): Yes
Supplier Device Package: TO-236AB
Voltage - Supply (Max): 18V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 130 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 25+ | 12.57 грн |
| 36+ | 8.47 грн |
| 41+ | 7.47 грн |
| 100+ | 5.97 грн |
| NCR402TR |
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Виробник: Nexperia USA Inc.
Description: IC LED DRVR LINEAR 20MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Voltage - Output: 16V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -55°C ~ 150°C (TA)
Current - Output / Channel: 20mA
Internal Switch(s): Yes
Supplier Device Package: TO-236AB
Voltage - Supply (Max): 18V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: IC LED DRVR LINEAR 20MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Voltage - Output: 16V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -55°C ~ 150°C (TA)
Current - Output / Channel: 20mA
Internal Switch(s): Yes
Supplier Device Package: TO-236AB
Voltage - Supply (Max): 18V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| NX138BKR |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 265MA TO236AB
Input Capacitance (Ciss) (Max) @ Vds: 20.2 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.49 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 310mW (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 265mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Description: MOSFET N-CH 60V 265MA TO236AB
Input Capacitance (Ciss) (Max) @ Vds: 20.2 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.49 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 310mW (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 265mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| NX7002BKR |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 270MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.6 pF @ 10 V
Description: MOSFET N-CH 60V 270MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.6 pF @ 10 V
на замовлення 1530 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 34+ | 9.43 грн |
| 54+ | 5.67 грн |
| 100+ | 3.45 грн |
| 500+ | 2.34 грн |
| 1000+ | 2.05 грн |
| NX7002BKSX |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 270MA 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 6-TSSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.6 pF @ 10 V
Description: MOSFET N-CH 60V 270MA 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 6-TSSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.6 pF @ 10 V
на замовлення 9028 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 20+ | 16.50 грн |
| 32+ | 9.68 грн |
| 100+ | 6.01 грн |
| 500+ | 4.14 грн |
| 1000+ | 3.65 грн |
| NX7002BKWX |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 270MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.6 pF @ 10 V
Description: MOSFET N-CH 60V 270MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.6 pF @ 10 V
на замовлення 10574 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 27+ | 11.78 грн |
| 44+ | 7.04 грн |
| 100+ | 4.37 грн |
| 500+ | 2.98 грн |
| 1000+ | 2.61 грн |
| PBHV8515QAZ |
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Виробник: Nexperia USA Inc.
Description: TRANS NPN 150V 0.5A DFN1010D-3
Power - Max: 325 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: DFN1010D-3
Frequency - Transition: 75MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 200mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 60mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: TRANS NPN 150V 0.5A DFN1010D-3
Power - Max: 325 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: DFN1010D-3
Frequency - Transition: 75MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 200mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 60mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 4269 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 44.78 грн |
| 12+ | 26.40 грн |
| 100+ | 16.91 грн |
| 500+ | 12.04 грн |
| 1000+ | 10.80 грн |
| 2000+ | 9.76 грн |
| PBSS4160DSH |
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Виробник: Nexperia USA Inc.
Description: TRANS 2NPN 60V 870MA 6-TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 290mW
Current - Collector (Ic) (Max): 870mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Frequency - Transition: 220MHz
Supplier Device Package: 6-TSOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: TRANS 2NPN 60V 870MA 6-TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 290mW
Current - Collector (Ic) (Max): 870mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Frequency - Transition: 220MHz
Supplier Device Package: 6-TSOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2864 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 38.49 грн |
| 14+ | 22.85 грн |
| 100+ | 14.54 грн |
| 500+ | 10.27 грн |
| 1000+ | 9.17 грн |
| PEMZ7,115 |
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Виробник: Nexperia USA Inc.
Description: TRANS NPN/PNP 12V 500MA SOT-666
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 220mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Frequency - Transition: 420MHz, 280MHz
Supplier Device Package: SOT-666
Part Status: Not For New Designs
Description: TRANS NPN/PNP 12V 500MA SOT-666
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 220mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Frequency - Transition: 420MHz, 280MHz
Supplier Device Package: SOT-666
Part Status: Not For New Designs
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 28.28 грн |
| 18+ | 17.02 грн |
| 100+ | 10.75 грн |
| 500+ | 7.53 грн |
| 1000+ | 6.70 грн |
| 2000+ | 6.01 грн |
| PESD2ETH-AXR |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 5.5VWM SOT143B
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Ethernet
Capacitance @ Frequency: 16pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOT-143B
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power Line Protection: Yes
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: TVS DIODE 5.5VWM SOT143B
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Ethernet
Capacitance @ Frequency: 16pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOT-143B
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power Line Protection: Yes
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 19735 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 36.92 грн |
| 13+ | 24.43 грн |
| 100+ | 17.41 грн |
| 500+ | 12.87 грн |
| 1000+ | 11.53 грн |
| PESD2IVN-UX |
![]() |
Виробник: Nexperia USA Inc.
Description: TVS DIODE 26.5VWM 53VC SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: CAN
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 26.5V (Max)
Supplier Device Package: SOT-323
Bidirectional Channels: 2
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 53V
Power - Peak Pulse: 150W
Power Line Protection: No
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q101
Description: TVS DIODE 26.5VWM 53VC SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: CAN
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 26.5V (Max)
Supplier Device Package: SOT-323
Bidirectional Channels: 2
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 53V
Power - Peak Pulse: 150W
Power Line Protection: No
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q101
на замовлення 5877 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 32.99 грн |
| 16+ | 19.59 грн |
| 100+ | 12.37 грн |
| 500+ | 8.68 грн |
| 1000+ | 7.74 грн |
| PESD3V3C1BSFYL |
![]() |
Виробник: Nexperia USA Inc.
Description: TVS DIODE 3.3VWM 5.5VC DSN0603-2
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: DSN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 5.5V
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 3.3VWM 5.5VC DSN0603-2
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: DSN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 5.5V
Power Line Protection: No
Part Status: Active
на замовлення 29599 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 17+ | 18.85 грн |
| 35+ | 8.78 грн |
| 100+ | 4.26 грн |
| 500+ | 3.45 грн |
| PESD3V3X1BCSFYL |
![]() |
Виробник: Nexperia USA Inc.
Description: TVS DIODE 3.3VWM 5.5VC DSN0603-2
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 1.1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: DSN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 5.5V
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 3.3VWM 5.5VC DSN0603-2
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 1.1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: DSN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 5.5V
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| PESD5V0H1BSFYL |
![]() |
Виробник: Nexperia USA Inc.
Description: TVS DIODE 5VWM 5VC DSN0603-2
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DSN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 5V
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5VWM 5VC DSN0603-2
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DSN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 5V
Power Line Protection: No
Part Status: Active
на замовлення 2152 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 40.06 грн |
| 13+ | 23.75 грн |
| 50+ | 17.11 грн |
| 100+ | 14.01 грн |
| PESD5V0V2BMYL |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 5VWM 12.5VC SOT883
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 18pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-883
Bidirectional Channels: 2
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 12.5V
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 5VWM 12.5VC SOT883
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 18pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-883
Bidirectional Channels: 2
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 12.5V
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 7261 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 14+ | 23.57 грн |
| 23+ | 13.62 грн |
| 100+ | 8.54 грн |
| 500+ | 5.94 грн |
| 1000+ | 5.27 грн |
| 2000+ | 4.70 грн |
| 5000+ | 4.02 грн |
| PMBT2222AYSX |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS 2NPN 40V 600MA 6-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 550mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: 6-TSSOP
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Qualification: AEC-Q101
Description: TRANS 2NPN 40V 600MA 6-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 550mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: 6-TSSOP
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Qualification: AEC-Q101
на замовлення 5113 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 17+ | 18.85 грн |
| 28+ | 11.04 грн |
| 100+ | 6.85 грн |
| 500+ | 4.72 грн |
| 1000+ | 4.17 грн |
| PMBT2907AYSX |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS 2PNP 60V 600MA 6-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 550mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: 6-TSSOP
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 250 mW
Qualification: AEC-Q101
Description: TRANS 2PNP 60V 600MA 6-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 550mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: 6-TSSOP
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 250 mW
Qualification: AEC-Q101
на замовлення 11054 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 20+ | 16.50 грн |
| 31+ | 10.06 грн |
| 100+ | 6.22 грн |
| 500+ | 4.28 грн |
| 1000+ | 3.77 грн |
| PMBT3904MB,315 |
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Виробник: Nexperia USA Inc.
Description: TRANS NPN 40V 0.2A DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: DFN1006B-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Qualification: AEC-Q101
Description: TRANS NPN 40V 0.2A DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: DFN1006B-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| PMBT4401YSX |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS NPN 40V 0.6A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Qualification: AEC-Q101
Description: TRANS NPN 40V 0.6A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Qualification: AEC-Q101
на замовлення 3810 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 18+ | 18.07 грн |
| 29+ | 10.51 грн |
| 100+ | 6.57 грн |
| 500+ | 4.53 грн |
| 1000+ | 4.00 грн |
| PMBT4403,235 |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PNP 40V 0.6A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 40V 0.6A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10636 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 34+ | 9.43 грн |
| 55+ | 5.60 грн |
| 100+ | 3.41 грн |
| 500+ | 2.31 грн |
| 1000+ | 2.02 грн |
| 2000+ | 1.78 грн |
| 5000+ | 1.49 грн |
| PMCM4401VNEAZ |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 12V 4.7A 4WLCSP
Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: 4-WLCSP (0.78x0.78)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 400mW (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, WLCSP
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 12V 4.7A 4WLCSP
Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: 4-WLCSP (0.78x0.78)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 400mW (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, WLCSP
Packaging: Cut Tape (CT)
на замовлення 85820 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 38.49 грн |
| 13+ | 24.81 грн |
| 100+ | 12.24 грн |
| 500+ | 10.57 грн |
| 1000+ | 8.87 грн |
| 2000+ | 8.37 грн |
| PMCM4401VPEZ |
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Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 12V 3.9A 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
Power Dissipation (Max): 400mW (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-WLCSP (0.78x0.78)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 6 V
Description: MOSFET P-CH 12V 3.9A 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
Power Dissipation (Max): 400mW (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-WLCSP (0.78x0.78)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 6 V
товару немає в наявності
В кошику
од. на суму грн.
| PMDPB56XNEAX |
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Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 30V 3.1A 6DFN
Part Status: Active
Supplier Device Package: DFN2020D-6
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 72mOhm @ 3.1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 256pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 485mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Description: MOSFET 2N-CH 30V 3.1A 6DFN
Part Status: Active
Supplier Device Package: DFN2020D-6
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 72mOhm @ 3.1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 256pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 485mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
на замовлення 16558 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 54.20 грн |
| 10+ | 32.00 грн |
| 100+ | 20.58 грн |
| 500+ | 14.69 грн |
| 1000+ | 13.19 грн |
| PMEG100V080ELPDZ |
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Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 100V 8A CFP15
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 10V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: CFP15
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 100V 8A CFP15
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 10V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: CFP15
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8929 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 58.92 грн |
| 10+ | 35.71 грн |
| 100+ | 23.15 грн |
| 500+ | 16.66 грн |
| PMF250XNEX |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 1A SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 254mOhm @ 900mA, 4.5V
Power Dissipation (Max): 342mW (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.65 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 81 pF @ 15 V
Description: MOSFET N-CH 30V 1A SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 254mOhm @ 900mA, 4.5V
Power Dissipation (Max): 342mW (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.65 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 81 pF @ 15 V
на замовлення 8895 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 17+ | 18.85 грн |
| 28+ | 11.20 грн |
| 100+ | 6.97 грн |
| 500+ | 4.81 грн |
| 1000+ | 4.25 грн |
| PMF63UNEX |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 20V 2.2A SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 2A, 4.5V
Power Dissipation (Max): 395mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.85 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 289 pF @ 10 V
Description: MOSFET N-CH 20V 2.2A SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 2A, 4.5V
Power Dissipation (Max): 395mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.85 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 289 pF @ 10 V
на замовлення 1960 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 32.21 грн |
| 16+ | 19.06 грн |
| 100+ | 12.04 грн |
| 500+ | 8.45 грн |
| 1000+ | 7.52 грн |
| PMGD175XNEX |
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Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 30V 0.87A 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 260mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 870mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 81pF @ 15V
Rds On (Max) @ Id, Vgs: 252mOhm @ 900mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.65nC @ 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-TSSOP
Part Status: Active
Description: MOSFET 2N-CH 30V 0.87A 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 260mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 870mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 81pF @ 15V
Rds On (Max) @ Id, Vgs: 252mOhm @ 900mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.65nC @ 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-TSSOP
Part Status: Active
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 39.28 грн |
| 14+ | 23.15 грн |
| PMN30UNEX |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 20V 4.8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.8A, 4.5V
Power Dissipation (Max): 530mW (Ta), 4.46W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 558 pF @ 10 V
Description: MOSFET N-CH 20V 4.8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.8A, 4.5V
Power Dissipation (Max): 530mW (Ta), 4.46W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 558 pF @ 10 V
на замовлення 689 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 25.92 грн |
| 20+ | 15.36 грн |
| 100+ | 9.63 грн |
| 500+ | 6.72 грн |
| PMN30UNX |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 4.5A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 530mW (Ta), 4.46W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 15 V
Description: MOSFET N-CH 30V 4.5A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 530mW (Ta), 4.46W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 15 V
на замовлення 3617 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 31.42 грн |
| 17+ | 18.53 грн |
| 100+ | 8.97 грн |
| 500+ | 8.17 грн |
| 1000+ | 7.01 грн |
| PMN30XPX |
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Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 5.2A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.2A, 4.5V
Power Dissipation (Max): 550mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 10 V
Description: MOSFET P-CH 20V 5.2A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.2A, 4.5V
Power Dissipation (Max): 550mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 10 V
на замовлення 1469 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 40.85 грн |
| 13+ | 24.06 грн |
| 100+ | 15.39 грн |
| 500+ | 10.91 грн |
| 1000+ | 9.78 грн |
| PMN52XPX |
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Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 3.7A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 530mW (Ta), 4.46W (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 3.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 3.7A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 530mW (Ta), 4.46W (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 3.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
на замовлення 5288 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 34.56 грн |
| 14+ | 21.79 грн |
| 100+ | 11.35 грн |
| 500+ | 9.74 грн |
| 1000+ | 8.69 грн |
| PMPB10XNEZ |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 20V 9A DFN2020MD-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020MD-6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2175 pF @ 10 V
Description: MOSFET N-CH 20V 9A DFN2020MD-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020MD-6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2175 pF @ 10 V
на замовлення 4846 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 53.42 грн |
| 10+ | 31.92 грн |
| 100+ | 20.58 грн |
| 500+ | 14.71 грн |
| 1000+ | 13.23 грн |
| PMPB12UNEX |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 20V 11.4A 6DFN
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 470mW (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 7.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 11.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V 11.4A 6DFN
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 470mW (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 7.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 11.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 2617 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 54.99 грн |
| 10+ | 32.68 грн |
| 50+ | 23.78 грн |
| 100+ | 19.62 грн |
| PMPB20XNEAX |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 20V 7.5A DFN2020MD-6
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Grade: Automotive
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 460mW (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V 7.5A DFN2020MD-6
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Grade: Automotive
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 460mW (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
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| PMPB95ENEAX |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 80V 2.8A DFN2020MD-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.8A, 10V
Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 504 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 2.8A DFN2020MD-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.8A, 10V
Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 504 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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| PMV42ENER |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 4.4A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.4A, 10V
Power Dissipation (Max): 500mW (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 281 pF @ 15 V
Description: MOSFET N-CH 30V 4.4A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.4A, 10V
Power Dissipation (Max): 500mW (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 281 pF @ 15 V
на замовлення 2219 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 36.92 грн |
| 14+ | 22.16 грн |
| 100+ | 14.12 грн |
| 500+ | 9.95 грн |
| 1000+ | 8.89 грн |
| PMV65UNER |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 20V 2.8A TO236AB
Input Capacitance (Ciss) (Max) @ Vds: 291 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 490mW (Ta)
Rds On (Max) @ Id, Vgs: 73mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V 2.8A TO236AB
Input Capacitance (Ciss) (Max) @ Vds: 291 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 490mW (Ta)
Rds On (Max) @ Id, Vgs: 73mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 7064 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 33.78 грн |
| 16+ | 19.90 грн |
| 50+ | 14.37 грн |
| 100+ | 11.78 грн |
| PQMB11Z |
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Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS 2PNP DFN1010B-6
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: DFN1010B-6
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 230mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS 2PNP DFN1010B-6
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: DFN1010B-6
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 230mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 3140 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 25.92 грн |
| 20+ | 15.13 грн |
| 50+ | 10.85 грн |
| 100+ | 8.87 грн |
| PQMD13Z |
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Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS 1NPN 1PNP 50V 6DFN
Supplier Device Package: DFN1010B-6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 230MHz, 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 350mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: TRANS PREBIAS 1NPN 1PNP 50V 6DFN
Supplier Device Package: DFN1010B-6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 230MHz, 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 350mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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| PQMH11Z |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS 2NPN DFN1010B-6
Part Status: Active
Supplier Device Package: DFN1010B-6
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 230MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 230mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS 2NPN DFN1010B-6
Part Status: Active
Supplier Device Package: DFN1010B-6
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 230MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 230mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
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| PQMH13Z |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS 2NPN DFN1010B-6
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: DFN1010B-6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 230MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 230mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS 2NPN DFN1010B-6
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: DFN1010B-6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 230MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 230mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
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| PZU12B2A,115 |
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Виробник: Nexperia USA Inc.
Description: DIODE ZENER 12V 320MW SOD323
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±2%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 320 mW
Part Status: Active
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -55°C ~ 150°C (TA)
Description: DIODE ZENER 12V 320MW SOD323
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±2%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 320 mW
Part Status: Active
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -55°C ~ 150°C (TA)
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| TDZ7V5J,115 |
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Виробник: Nexperia USA Inc.
Description: DIODE ZENER 7.5V 500MW SOD323F
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 7.5V 500MW SOD323F
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 275 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 19+ | 17.28 грн |
| 30+ | 10.14 грн |
| 100+ | 6.33 грн |
| PMT280ENEAX |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 1.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 385mOhm @ 1.5A, 10V
Power Dissipation (Max): 770mW (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 50 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 1.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 385mOhm @ 1.5A, 10V
Power Dissipation (Max): 770mW (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 50 V
Qualification: AEC-Q101
на замовлення 576 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 51.06 грн |
| 10+ | 30.26 грн |
| 50+ | 22.07 грн |
| 100+ | 18.20 грн |
| NX3008NBKSH |
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Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 30V 0.35A 6TSSOP
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: 6-TSSOP
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 445mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 30V 0.35A 6TSSOP
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: 6-TSSOP
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 445mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 14+ | 22.78 грн |
| 23+ | 13.54 грн |
| 100+ | 8.49 грн |
| 500+ | 5.89 грн |
| 1000+ | 5.22 грн |
| PMV100XPEAR |
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Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 2.4A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 128mOhm @ 2.4A, 4.5V
Power Dissipation (Max): 463mW (Ta), 1.9W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET P-CH 20V 2.4A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 128mOhm @ 2.4A, 4.5V
Power Dissipation (Max): 463mW (Ta), 1.9W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 10 V
Qualification: AEC-Q101
на замовлення 5389 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 30.64 грн |
| 17+ | 18.31 грн |
| 50+ | 13.18 грн |
| 100+ | 10.80 грн |
| PMV35EPER |
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Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 30V 5.3A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V
Power Dissipation (Max): 480mW (Ta), 1.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 793 pF @ 15 V
Description: MOSFET P-CH 30V 5.3A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V
Power Dissipation (Max): 480mW (Ta), 1.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 793 pF @ 15 V
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| PMPB55ENEAX |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 4A DFN2020MD-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 10A, 10V
Power Dissipation (Max): 1.65W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 4A DFN2020MD-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 10A, 10V
Power Dissipation (Max): 1.65W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 30 V
Qualification: AEC-Q101
на замовлення 3039 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 59.70 грн |
| 10+ | 35.78 грн |
| 50+ | 26.13 грн |
| 100+ | 21.58 грн |
| NX138AKR |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 190MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 190mA, 10V
Power Dissipation (Max): 325mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 30 V
Description: MOSFET N-CH 60V 190MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 190mA, 10V
Power Dissipation (Max): 325mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 30 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
| NX138AKSX |
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Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 60V 0.17A 6TSSOP
Part Status: Active
Supplier Device Package: 6-TSSOP
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 170mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 325mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 60V 0.17A 6TSSOP
Part Status: Active
Supplier Device Package: 6-TSSOP
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 170mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 325mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
на замовлення 8317 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 17+ | 18.85 грн |
| 28+ | 10.97 грн |
| 100+ | 6.85 грн |
| 500+ | 4.73 грн |
| 1000+ | 4.18 грн |
| PMN40ENEX |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 5.7A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V
Power Dissipation (Max): 530mW (Ta), 4.46W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 294 pF @ 15 V
Description: MOSFET N-CH 30V 5.7A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V
Power Dissipation (Max): 530mW (Ta), 4.46W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 294 pF @ 15 V
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од. на суму грн.
| NX138BKWX |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 210MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 10V
Power Dissipation (Max): 266mW (Ta), 1.33W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 30 V
Description: MOSFET N-CH 60V 210MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 10V
Power Dissipation (Max): 266mW (Ta), 1.33W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 30 V
на замовлення 6809 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 25+ | 12.57 грн |
| 40+ | 7.56 грн |
| 100+ | 4.70 грн |
| 500+ | 3.21 грн |
| 1000+ | 2.82 грн |
| PTVS5V0Z1USKYL |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 5VWM 12VC DSN1608-2
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 12V
Voltage - Breakdown (Min): 6.4V
Unidirectional Channels: 1
Supplier Device Package: DSN1608-2
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 20A
Capacitance @ Frequency: 1200pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0603 (1608 Metric)
Packaging: Cut Tape (CT)
Description: TVS DIODE 5VWM 12VC DSN1608-2
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 12V
Voltage - Breakdown (Min): 6.4V
Unidirectional Channels: 1
Supplier Device Package: DSN1608-2
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 20A
Capacitance @ Frequency: 1200pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0603 (1608 Metric)
Packaging: Cut Tape (CT)
на замовлення 18959 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 39.28 грн |
| 14+ | 23.15 грн |
| 50+ | 16.63 грн |
| 100+ | 13.64 грн |
| PTVS15VZ1USKYL |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 15VWM 27.4VC DSN1608-2
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 340pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7.5A
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: DSN1608-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 27.4V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 15VWM 27.4VC DSN1608-2
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 340pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7.5A
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: DSN1608-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 27.4V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
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| PTVS18VZ1USKYL |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 18VWM 32.8VC DSN1608-2
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 210W
Voltage - Clamping (Max) @ Ipp: 32.8V
Voltage - Breakdown (Min): 20V
Unidirectional Channels: 1
Supplier Device Package: DSN1608-2
Voltage - Reverse Standoff (Typ): 18V (Max)
Current - Peak Pulse (10/1000µs): 6.4A
Capacitance @ Frequency: 290pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0603 (1608 Metric)
Packaging: Cut Tape (CT)
Description: TVS DIODE 18VWM 32.8VC DSN1608-2
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 210W
Voltage - Clamping (Max) @ Ipp: 32.8V
Voltage - Breakdown (Min): 20V
Unidirectional Channels: 1
Supplier Device Package: DSN1608-2
Voltage - Reverse Standoff (Typ): 18V (Max)
Current - Peak Pulse (10/1000µs): 6.4A
Capacitance @ Frequency: 290pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0603 (1608 Metric)
Packaging: Cut Tape (CT)
на замовлення 8744 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 32.21 грн |
| 16+ | 19.14 грн |
| 50+ | 13.77 грн |
| 100+ | 11.29 грн |
| PTVS26VZ1USKYL |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 26VWM 46VC DSN1608-2
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 46V
Voltage - Breakdown (Min): 28.9V
Unidirectional Channels: 1
Supplier Device Package: DSN1608-2
Voltage - Reverse Standoff (Typ): 26V (Max)
Current - Peak Pulse (10/1000µs): 4.5A
Capacitance @ Frequency: 215pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0603 (1608 Metric)
Packaging: Cut Tape (CT)
Description: TVS DIODE 26VWM 46VC DSN1608-2
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 46V
Voltage - Breakdown (Min): 28.9V
Unidirectional Channels: 1
Supplier Device Package: DSN1608-2
Voltage - Reverse Standoff (Typ): 26V (Max)
Current - Peak Pulse (10/1000µs): 4.5A
Capacitance @ Frequency: 215pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0603 (1608 Metric)
Packaging: Cut Tape (CT)
на замовлення 11125 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 32.21 грн |
| 16+ | 19.14 грн |
| 50+ | 13.77 грн |
| 100+ | 11.29 грн |























