| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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BZX384-B75,115 | NEXPERIA |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 75V; SMD; reel,tape; SOD323; Ifmax: 250mA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 75V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOD323 Max. load current: 0.25A Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| BZX384-B18-QX | NEXPERIA |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOD323; Ifmax: 250mA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 18V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOD323 Max. load current: 0.25A Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BZX384-B12-QX | NEXPERIA |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOD323; Ifmax: 250mA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 12V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOD323 Max. load current: 0.25A Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BZX384-B24-QX | NEXPERIA |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 24V; SMD; reel,tape; SOD323; Ifmax: 250mA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 24V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOD323 Max. load current: 0.25A Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BZX384-B27-QX | NEXPERIA |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 27V; SMD; reel,tape; SOD323; Ifmax: 250mA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 27V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOD323 Max. load current: 0.25A Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BZX384-B43-QX | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 43V; SMD; reel,tape; SOD323; Ifmax: 250mA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 43V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOD323 Max. load current: 0.25A Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 74HC10D-Q100J | NEXPERIA |
Category: Gates, invertersDescription: IC: digital Type of integrated circuit: digital |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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PMMT591A,215 | NEXPERIA |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 40V; 1A; 250mW; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 1A Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 300...800 Mounting: SMD Kind of package: 7 inch reel; tape Frequency: 150MHz Pulsed collector current: 2A |
на замовлення 2338 шт: термін постачання 21-30 дні (днів) |
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74LV132D,118 | NEXPERIA |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 4; IN: 2; TTL; SMD; SO14; 1÷5.5VDC; -40÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Technology: TTL Mounting: SMD Case: SO14 Supply voltage: 1...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Quiescent current: 40µA Kind of input: with Schmitt trigger Family: LV Delay time: 65ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| 74AUP2G132DC,125 | NEXPERIA |
Category: Gates, invertersDescription: IC: digital; Schmitt trigger; NAND; Ch: 2; IN: 2; CMOS; SMD; VSSOP8 Type of integrated circuit: digital Kind of gate: NAND Number of channels: 2 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: VSSOP8 Supply voltage: 0.8...3.6V DC Operating temperature: -40...125°C Kind of package: reel; tape Kind of input: with Schmitt trigger Family: AUP Kind of integrated circuit: Schmitt trigger Manufacturer series: Mini Logic |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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74HC4017D,653 | NEXPERIA |
Category: Counters/dividersDescription: IC: digital; 5-stage,decade counter; CMOS; SMD; SO16; HC; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: 5-stage; decade counter Technology: CMOS Mounting: SMD Case: SO16 Family: HC Kind of package: reel; tape Operating temperature: -40...125°C Supply voltage: 2...6V DC |
на замовлення 813 шт: термін постачання 21-30 дні (днів) |
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PMEG2005ET,215 | NEXPERIA |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOT23; SMD; 20V; 0.5A; reel,tape; 420mW Type of diode: Schottky rectifying Case: SOT23 Mounting: SMD Max. off-state voltage: 20V Load current: 0.5A Semiconductor structure: single diode Capacitance: 80pF Max. forward voltage: 0.39V Max. load current: 3.9A Leakage current: 0.2mA Max. forward impulse current: 10A Kind of package: reel; tape Power dissipation: 0.42W |
на замовлення 3895 шт: термін постачання 21-30 дні (днів) |
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PMEG2005CT,215 | NEXPERIA |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOT23; SMD; 20V; 0.5A; 22ns; reel,tape Type of diode: Schottky rectifying Case: SOT23 Mounting: SMD Max. off-state voltage: 20V Load current: 0.5A Semiconductor structure: common cathode; double Capacitance: 80pF Max. forward voltage: 0.39V Leakage current: 0.2mA Max. forward impulse current: 10A Kind of package: reel; tape Reverse recovery time: 22ns |
на замовлення 2415 шт: термін постачання 21-30 дні (днів) |
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| BZX58550-C3V0-QX | NEXPERIA |
Category: SMD Zener diodesDescription: Diode: Zener Type of diode: Zener |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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| 74LVC2G66DC,125 | NEXPERIA |
Category: Decoders, multiplexers, switchesDescription: IC: analog switch; bilateral,switch; SMD; VSSOP8; LVC; 1.6÷5.5VDC Type of integrated circuit: analog switch Case: VSSOP8 Supply voltage: 1.6...5.5V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Kind of integrated circuit: bilateral; switch Family: LVC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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PZU14B2,115 | NEXPERIA |
Category: SMD Zener diodesDescription: Diode: Zener; 0.55W; 14V; SMD; reel,tape; SOD323F; Ifmax: 200mA Kind of package: reel; tape Case: SOD323F Mounting: SMD Semiconductor structure: single diode Type of diode: Zener Leakage current: 0.1µA Max. load current: 0.2A Power dissipation: 0.55W Max. forward voltage: 1.1V Tolerance: ±2% Zener voltage: 14V |
на замовлення 2627 шт: термін постачання 21-30 дні (днів) |
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PBSS5230T,215 | NEXPERIA |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 30V; 2A; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 2A Case: SOT23; TO236AB Mounting: SMD Kind of package: 7 inch reel; tape Frequency: 200MHz Current gain: 100...450 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| PBSS8110T-QR | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 1A; 0.48W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 1A Case: SOT23; TO236AB Mounting: SMD Kind of package: 7 inch reel; tape Frequency: 100MHz Power dissipation: 0.48W Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BCW60B,215 | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 32V; 0.1A; 250mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 20...310 Mounting: SMD Kind of package: 7 inch reel; tape Frequency: 250MHz Pulsed collector current: 0.2A |
на замовлення 5364 шт: термін постачання 21-30 дні (днів) |
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PMV65XP,215 | NEXPERIA |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -1.8A; 833mW; SOT23,TO236AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.8A Case: SOT23; TO236AB Gate-source voltage: ±12V On-state resistance: 135mΩ Mounting: SMD Gate charge: 7.7nC Kind of package: reel; tape Kind of channel: enhancement Power dissipation: 833mW |
на замовлення 5694 шт: термін постачання 21-30 дні (днів) |
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PMV65XPEAR | NEXPERIA |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -1.8A; Idm: -120mA; ESD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.8A Pulsed drain current: -120mA Case: SOT23; TO236AB On-state resistance: 114mΩ Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 710 шт: термін постачання 21-30 дні (днів) |
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PMV65XPVL | NEXPERIA |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; Trench; unipolar; -20V; -1.8A; Idm: -16A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.8A Pulsed drain current: -16A Case: SOT23; TO236AB Gate-source voltage: ±12V On-state resistance: 0.105Ω Mounting: SMD Gate charge: 7.7nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| PMEG3020CEP-QX | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying Type of diode: Schottky rectifying |
на замовлення 9000 шт: термін постачання 21-30 дні (днів) |
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| PMEG3020EGW-QX | NEXPERIA |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying Type of diode: Schottky rectifying |
на замовлення 9000 шт: термін постачання 21-30 дні (днів) |
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BSR43-QX | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 1A; 1.35W; SC62,SOT89 Frequency: 100MHz Mounting: SMD Polarisation: bipolar Kind of package: reel; tape Type of transistor: NPN Case: SC62; SOT89 Collector current: 1A Power dissipation: 1.35W Current gain: 30...300 Collector-emitter voltage: 80V Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1PS76SB10,115 | NEXPERIA |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD323; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky rectifying Case: SOD323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.8V Max. forward impulse current: 0.6A Kind of package: reel; tape |
на замовлення 4 шт: термін постачання 21-30 дні (днів) |
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1PS76SB10,135 | NEXPERIA |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD323; SMD; 30V; 0.2A; reel,tape Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: SMD Case: SOD323 Load current: 0.2A Max. forward impulse current: 0.6A Max. forward voltage: 0.8V Max. off-state voltage: 30V |
на замовлення 913 шт: термін постачання 21-30 дні (днів) |
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1PS76SB10-QX | NEXPERIA |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD323; SMD; 30V; 0.2A; reel,tape Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: SMD Case: SOD323 Load current: 0.2A Max. forward impulse current: 0.6A Max. forward voltage: 0.8V Max. off-state voltage: 30V |
на замовлення 90 шт: термін постачання 21-30 дні (днів) |
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| 1PS76SB10-QZ | NEXPERIA |
Category: SMD Schottky diodesDescription: 1PS76SB10-QZ |
на замовлення 45000 шт: термін постачання 21-30 дні (днів) |
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| PESD5V0C2UMYL | NEXPERIA |
Category: Diodes - Unclassified Description: PESD5V0C2UMYL |
на замовлення 20000 шт: термін постачання 21-30 дні (днів) |
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NX3020NAKV,115 | NEXPERIA |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 120mA; Idm: 0.8A; 375mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.12A Power dissipation: 375mW Case: SOT666 Gate-source voltage: ±20V On-state resistance: 9.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 0.44nC Pulsed drain current: 0.8A |
на замовлення 864 шт: термін постачання 21-30 дні (днів) |
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| PMBT2907AMYL | NEXPERIA |
Category: PNP SMD transistorsDescription: Transistor: PNP Type of transistor: PNP |
на замовлення 20000 шт: термін постачання 21-30 дні (днів) |
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| BZX84-C6V2-QR | NEXPERIA |
Category: SMD Zener diodesDescription: Diode: Zener; 0.25W; 6.2V; SMD; reel,tape; SOT23; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 6.2V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOT23 Max. load current: 0.2A Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BZX84-C6V2,235 | NEXPERIA |
Category: SMD Zener diodesDescription: Diode: Zener; 0.25W; 6.2V; SMD; reel,tape; SOT23; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 6.2V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOT23 Max. load current: 0.2A Semiconductor structure: single diode Leakage current: 3µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BC857B,235 | NEXPERIA |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 0.1A; 250mW; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23; TO236AB Pulsed collector current: 0.2A Mounting: SMD Kind of package: 11 inch reel; tape Frequency: 100MHz Current gain: 220...475 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAV102,115 | NEXPERIA |
Category: SMD universal diodesDescription: Diode: switching; SMD; 200V; 250mA; 50ns; SOD80; Ufmax: 1.25V; 400mW Mounting: SMD Semiconductor structure: single diode Features of semiconductor devices: fast switching Type of diode: switching Reverse recovery time: 50ns Load current: 0.25A Max. forward voltage: 1.25V Power dissipation: 0.4W Max. load current: 0.625A Max. forward impulse current: 9A Max. off-state voltage: 200V Case: SOD80 Kind of package: reel; tape |
на замовлення 1459 шт: термін постачання 21-30 дні (днів) |
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BAT754C,215 | NEXPERIA |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOT23; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky rectifying Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common cathode; double Max. forward voltage: 0.6V Max. forward impulse current: 0.6A Kind of package: reel; tape |
на замовлення 1184 шт: термін постачання 21-30 дні (днів) |
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| GAN080-650EBEZ | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 29A; Idm: 58A; 240W Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 29A Pulsed drain current: 58A Case: DFN8080-8 Gate-source voltage: -6...7V On-state resistance: 80mΩ Mounting: SMD Gate charge: 6.2nC Kind of package: tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Power dissipation: 240W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| GAN140-650EBEZ | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 17A; Idm: 32A; 113W Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 17A Pulsed drain current: 32A Case: DFN8080-8 Gate-source voltage: -1.4...7V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 3.5nC Kind of package: tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Power dissipation: 113W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| GAN140-650FBEZ | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 17A; Idm: 32A; 113W Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 17A Pulsed drain current: 32A Case: DFN5060-5 Gate-source voltage: -1.4...7V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 3.5nC Kind of package: tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Power dissipation: 113W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| GAN190-650EBEZ | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11.5A; Idm: 20.5A Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 11.5A Pulsed drain current: 20.5A Case: DFN8080-8 Gate-source voltage: -1.4...7V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 2.8nC Kind of package: tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Power dissipation: 125W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| GAN190-650FBEZ | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11.5A; Idm: 20.5A Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 11.5A Pulsed drain current: 20.5A Case: DFN5060-5 Gate-source voltage: -1.4...7V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 2.8nC Kind of package: tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Power dissipation: 125W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| GAN3R2-100CBEAZ | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; GaN; unipolar; HEMT; 100V; 60A; Idm: 230A; 394W Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 100V Drain current: 60A Pulsed drain current: 230A Case: WLCSP8 Gate-source voltage: -4...6V On-state resistance: 3.2mΩ Mounting: SMD Gate charge: 12nC Kind of package: tape Kind of channel: enhancement Power dissipation: 394W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| GAN7R0-150LBEZ | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; GaN; unipolar; HEMT; 150V; 28A; Idm: 120A; 28W Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 150V Drain current: 28A Pulsed drain current: 120A Case: FCLGA3 Gate-source voltage: -4...6V On-state resistance: 7mΩ Mounting: SMD Gate charge: 7.6nC Kind of package: tape Kind of channel: enhancement Power dissipation: 28W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BUK9M11-40HX | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 193A; 50W Case: LFPAK33; SOT1210 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Gate charge: 21nC On-state resistance: 27.2mΩ Power dissipation: 50W Drain current: 34A Drain-source voltage: 40V Pulsed drain current: 193A Application: automotive industry Polarisation: unipolar Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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1PS76SB21,115 | NEXPERIA |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD323; SMD; 40V; 0.2A; reel,tape Type of diode: Schottky rectifying Case: SOD323 Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 1A Kind of package: reel; tape |
на замовлення 418 шт: термін постачання 21-30 дні (днів) |
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| PBSS5220PAPSX | NEXPERIA |
Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; 20V; 2A; DFN2020D-6,SOT1118D Mounting: SMD Case: DFN2020D-6; SOT1118D Kind of package: reel; tape Collector current: 2A Collector-emitter voltage: 20V Current gain: 100...400 Frequency: 95MHz Polarisation: bipolar Type of transistor: PNP x2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NX138AKVL | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; Trench; unipolar; 60V; 0.12A; Idm: 0.765A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.12A Pulsed drain current: 0.765A Power dissipation: 0.265W Case: SOT23; TO236AB Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Gate charge: 0.9nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 8974 шт: термін постачання 21-30 дні (днів) |
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74LVT14D,118 | NEXPERIA |
Category: Gates, invertersDescription: IC: digital; hex,inverter,Schmitt trigger; NOT; Ch: 6; IN: 1; TTL Type of integrated circuit: digital Kind of gate: NOT Number of channels: 6 Mounting: SMD Case: SO14 Kind of package: reel; tape Kind of input: with Schmitt trigger Family: LVT Kind of integrated circuit: hex; inverter; Schmitt trigger Technology: TTL Operating temperature: -40...85°C Supply voltage: 2.7...3.6V DC Number of inputs: 1 |
на замовлення 1391 шт: термін постачання 21-30 дні (днів) |
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74LVT14PW,118 | NEXPERIA |
Category: Gates, invertersDescription: IC: digital; hex,inverter,Schmitt trigger; NOT; Ch: 6; IN: 1; TTL Type of integrated circuit: digital Kind of gate: NOT Number of channels: 6 Mounting: SMD Case: TSSOP14 Kind of package: reel; tape Kind of input: with Schmitt trigger Family: LVT Kind of integrated circuit: hex; inverter; Schmitt trigger Technology: TTL Operating temperature: -40...85°C Supply voltage: 2.7...3.6V DC Number of inputs: 1 |
на замовлення 944 шт: термін постачання 21-30 дні (днів) |
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74HCT7541D,118 | NEXPERIA |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS,TTL Operating temperature: -40...125°C Number of channels: 8 Supply voltage: 4.5...5.5V DC Kind of output: 3-state Kind of integrated circuit: buffer; line driver; non-inverting Family: HCT Technology: CMOS; TTL Type of integrated circuit: digital Kind of package: reel; tape Mounting: SMD Case: SO20 Kind of input: with Schmitt trigger |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| 74VHCT541D,118 | NEXPERIA |
Category: Buffers, transceivers, driversDescription: IC: digital; 3-state,8bit,buffer,octal,line driver; Ch: 1; IN: 10 Type of integrated circuit: digital Kind of integrated circuit: 3-state; 8bit; buffer; line driver; octal Number of channels: 1 Technology: TTL Mounting: SMD Case: SO20 Operating temperature: -40...125°C Kind of output: 3-state Supply voltage: 4.5...5.5V DC Kind of package: reel; tape Family: VHCT Number of inputs: 10 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 74AUP2G240DC,125 | NEXPERIA |
Category: Gates, invertersDescription: IC: digital; 3-state,buffer,inverting,line driver; Ch: 2; IN: 2 Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; inverting; line driver Number of channels: 2 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: VSSOP8 Manufacturer series: Mini Logic Supply voltage: 0.8...3.6V DC Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: 3-state Family: AUP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 74AUP2G240GS,115 | NEXPERIA |
Category: Buffers, transceivers, driversDescription: IC: digital; 3-state,buffer,inverting,line driver; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; inverting; line driver Technology: CMOS Mounting: SMD Case: XSON8 Manufacturer series: Mini Logic Supply voltage: 0.8...3.6V DC Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: 3-state Family: AUP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 74AUP2G240GT,115 | NEXPERIA |
Category: Gates, invertersDescription: IC: digital; 3-state,buffer,inverting,line driver; Ch: 2; IN: 2 Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; inverting; line driver Number of channels: 2 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: XSON8 Manufacturer series: Mini Logic Supply voltage: 0.8...3.6V DC Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: 3-state Family: AUP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
BZV85-C27,113 | NEXPERIA |
Category: THT Zener diodesDescription: Diode: Zener; 1/1.3W; 27V; reel,tape; DO41; single diode; 500mA Type of diode: Zener Power dissipation: 1/1.3W Zener voltage: 27V Kind of package: reel; tape Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Max. load current: 0.5A Max. forward voltage: 1V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| BUK7M12-60EX | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 37A; Idm: 211A; 75W Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 24.8nC On-state resistance: 27mΩ Drain current: 37A Power dissipation: 75W Gate-source voltage: ±20V Pulsed drain current: 211A Drain-source voltage: 60V Application: automotive industry Case: LFPAK33; SOT1210 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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PTVS5V0S1UR,115 | NEXPERIA |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 6.7V; 43.5A; unidirectional; SOD123W; max.150°C Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 5V Breakdown voltage: 6.7V Max. forward impulse current: 43.5A Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Operating temperature: max. 150°C Leakage current: 5µA |
на замовлення 6455 шт: термін постачання 21-30 дні (днів) |
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BAT721C,215 | NEXPERIA |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.2A; reel,tape Type of diode: Schottky rectifying Case: SOT23 Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: common cathode; double Max. forward voltage: 0.55V Max. forward impulse current: 1A Kind of package: reel; tape |
на замовлення 2229 шт: термін постачання 21-30 дні (днів) |
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| 74LVC8T245BQ-Q100J | NEXPERIA |
Category: Level translatorsDescription: IC: digital; 8bit,bidirectional,transceiver,translator; CMOS Type of integrated circuit: digital Kind of integrated circuit: 8bit; bidirectional; transceiver; translator Supply voltage: 1.2...5.5V DC Mounting: SMD Case: DHVQFN24 Operating temperature: -40...125°C Kind of output: 3-state Family: LVC Kind of package: reel; tape Technology: CMOS |
товару немає в наявності |
В кошику од. на суму грн. |
| BZX384-B75,115 |
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Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 75V; SMD; reel,tape; SOD323; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 75V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD323
Max. load current: 0.25A
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 75V; SMD; reel,tape; SOD323; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 75V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD323
Max. load current: 0.25A
Semiconductor structure: single diode
товару немає в наявності
В кошику
од. на суму грн.
| BZX384-B18-QX |
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Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOD323; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD323
Max. load current: 0.25A
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOD323; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD323
Max. load current: 0.25A
Semiconductor structure: single diode
Application: automotive industry
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В кошику
од. на суму грн.
| BZX384-B12-QX |
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Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOD323; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD323
Max. load current: 0.25A
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOD323; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD323
Max. load current: 0.25A
Semiconductor structure: single diode
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| BZX384-B24-QX |
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Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 24V; SMD; reel,tape; SOD323; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD323
Max. load current: 0.25A
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 24V; SMD; reel,tape; SOD323; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD323
Max. load current: 0.25A
Semiconductor structure: single diode
Application: automotive industry
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В кошику
од. на суму грн.
| BZX384-B27-QX |
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Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 27V; SMD; reel,tape; SOD323; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD323
Max. load current: 0.25A
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 27V; SMD; reel,tape; SOD323; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD323
Max. load current: 0.25A
Semiconductor structure: single diode
Application: automotive industry
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В кошику
од. на суму грн.
| BZX384-B43-QX |
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 43V; SMD; reel,tape; SOD323; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD323
Max. load current: 0.25A
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 43V; SMD; reel,tape; SOD323; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD323
Max. load current: 0.25A
Semiconductor structure: single diode
Application: automotive industry
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В кошику
од. на суму грн.
| 74HC10D-Q100J |
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Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
товару немає в наявності
В кошику
од. на суму грн.
| PMMT591A,215 |
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Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 1A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 300...800
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 150MHz
Pulsed collector current: 2A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 1A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 300...800
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 150MHz
Pulsed collector current: 2A
на замовлення 2338 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 18.63 грн |
| 36+ | 11.17 грн |
| 46+ | 8.73 грн |
| 55+ | 7.16 грн |
| 100+ | 5.90 грн |
| 210+ | 4.91 грн |
| 74LV132D,118 |
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Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; TTL; SMD; SO14; 1÷5.5VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: TTL
Mounting: SMD
Case: SO14
Supply voltage: 1...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Kind of input: with Schmitt trigger
Family: LV
Delay time: 65ns
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; TTL; SMD; SO14; 1÷5.5VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: TTL
Mounting: SMD
Case: SO14
Supply voltage: 1...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Kind of input: with Schmitt trigger
Family: LV
Delay time: 65ns
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В кошику
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| 74AUP2G132DC,125 |
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Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; Schmitt trigger; NAND; Ch: 2; IN: 2; CMOS; SMD; VSSOP8
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 2
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: VSSOP8
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AUP
Kind of integrated circuit: Schmitt trigger
Manufacturer series: Mini Logic
Category: Gates, inverters
Description: IC: digital; Schmitt trigger; NAND; Ch: 2; IN: 2; CMOS; SMD; VSSOP8
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 2
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: VSSOP8
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AUP
Kind of integrated circuit: Schmitt trigger
Manufacturer series: Mini Logic
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В кошику
од. на суму грн.
| 74HC4017D,653 |
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Виробник: NEXPERIA
Category: Counters/dividers
Description: IC: digital; 5-stage,decade counter; CMOS; SMD; SO16; HC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 5-stage; decade counter
Technology: CMOS
Mounting: SMD
Case: SO16
Family: HC
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 2...6V DC
Category: Counters/dividers
Description: IC: digital; 5-stage,decade counter; CMOS; SMD; SO16; HC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 5-stage; decade counter
Technology: CMOS
Mounting: SMD
Case: SO16
Family: HC
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 2...6V DC
на замовлення 813 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 93.15 грн |
| 10+ | 63.54 грн |
| 25+ | 56.07 грн |
| PMEG2005ET,215 |
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Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 20V; 0.5A; reel,tape; 420mW
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 80pF
Max. forward voltage: 0.39V
Max. load current: 3.9A
Leakage current: 0.2mA
Max. forward impulse current: 10A
Kind of package: reel; tape
Power dissipation: 0.42W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 20V; 0.5A; reel,tape; 420mW
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 80pF
Max. forward voltage: 0.39V
Max. load current: 3.9A
Leakage current: 0.2mA
Max. forward impulse current: 10A
Kind of package: reel; tape
Power dissipation: 0.42W
на замовлення 3895 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 27.10 грн |
| 21+ | 19.19 грн |
| 23+ | 17.30 грн |
| PMEG2005CT,215 |
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Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 20V; 0.5A; 22ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.5A
Semiconductor structure: common cathode; double
Capacitance: 80pF
Max. forward voltage: 0.39V
Leakage current: 0.2mA
Max. forward impulse current: 10A
Kind of package: reel; tape
Reverse recovery time: 22ns
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 20V; 0.5A; 22ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.5A
Semiconductor structure: common cathode; double
Capacitance: 80pF
Max. forward voltage: 0.39V
Leakage current: 0.2mA
Max. forward impulse current: 10A
Kind of package: reel; tape
Reverse recovery time: 22ns
на замовлення 2415 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 18.63 грн |
| 30+ | 13.37 грн |
| 100+ | 11.17 грн |
| BZX58550-C3V0-QX |
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на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.43 грн |
| 74LVC2G66DC,125 |
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Виробник: NEXPERIA
Category: Decoders, multiplexers, switches
Description: IC: analog switch; bilateral,switch; SMD; VSSOP8; LVC; 1.6÷5.5VDC
Type of integrated circuit: analog switch
Case: VSSOP8
Supply voltage: 1.6...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Kind of integrated circuit: bilateral; switch
Family: LVC
Category: Decoders, multiplexers, switches
Description: IC: analog switch; bilateral,switch; SMD; VSSOP8; LVC; 1.6÷5.5VDC
Type of integrated circuit: analog switch
Case: VSSOP8
Supply voltage: 1.6...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Kind of integrated circuit: bilateral; switch
Family: LVC
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| PZU14B2,115 |
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Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.55W; 14V; SMD; reel,tape; SOD323F; Ifmax: 200mA
Kind of package: reel; tape
Case: SOD323F
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 0.1µA
Max. load current: 0.2A
Power dissipation: 0.55W
Max. forward voltage: 1.1V
Tolerance: ±2%
Zener voltage: 14V
Category: SMD Zener diodes
Description: Diode: Zener; 0.55W; 14V; SMD; reel,tape; SOD323F; Ifmax: 200mA
Kind of package: reel; tape
Case: SOD323F
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 0.1µA
Max. load current: 0.2A
Power dissipation: 0.55W
Max. forward voltage: 1.1V
Tolerance: ±2%
Zener voltage: 14V
на замовлення 2627 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 17.78 грн |
| 36+ | 11.09 грн |
| 100+ | 5.33 грн |
| 330+ | 2.80 грн |
| 906+ | 2.65 грн |
| PBSS5230T,215 |
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Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 2A; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 2A
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 200MHz
Current gain: 100...450
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 2A; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 2A
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 200MHz
Current gain: 100...450
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| PBSS8110T-QR |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 0.48W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 100MHz
Power dissipation: 0.48W
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 0.48W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 100MHz
Power dissipation: 0.48W
Application: automotive industry
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| BCW60B,215 |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 20...310
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 250MHz
Pulsed collector current: 0.2A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 20...310
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 250MHz
Pulsed collector current: 0.2A
на замовлення 5364 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 28.79 грн |
| 21+ | 19.34 грн |
| 50+ | 13.05 грн |
| PMV65XP,215 |
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Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; 833mW; SOT23,TO236AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 833mW
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; 833mW; SOT23,TO236AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 833mW
на замовлення 5694 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 25.41 грн |
| 22+ | 18.01 грн |
| 50+ | 12.27 грн |
| 100+ | 10.22 грн |
| 144+ | 6.42 грн |
| 396+ | 6.07 грн |
| PMV65XPEAR |
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Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; Idm: -120mA; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -120mA
Case: SOT23; TO236AB
On-state resistance: 114mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; Idm: -120mA; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -120mA
Case: SOT23; TO236AB
On-state resistance: 114mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 710 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 28.79 грн |
| 18+ | 22.10 грн |
| 50+ | 15.88 грн |
| 85+ | 10.93 грн |
| 232+ | 10.38 грн |
| 500+ | 9.99 грн |
| PMV65XPVL |
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Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -1.8A; Idm: -16A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -16A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -1.8A; Idm: -16A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -16A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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| PMEG3020CEP-QX |
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
на замовлення 9000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 12.62 грн |
| PMEG3020EGW-QX |
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Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
на замовлення 9000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.61 грн |
| BSR43-QX |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.35W; SC62,SOT89
Frequency: 100MHz
Mounting: SMD
Polarisation: bipolar
Kind of package: reel; tape
Type of transistor: NPN
Case: SC62; SOT89
Collector current: 1A
Power dissipation: 1.35W
Current gain: 30...300
Collector-emitter voltage: 80V
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.35W; SC62,SOT89
Frequency: 100MHz
Mounting: SMD
Polarisation: bipolar
Kind of package: reel; tape
Type of transistor: NPN
Case: SC62; SOT89
Collector current: 1A
Power dissipation: 1.35W
Current gain: 30...300
Collector-emitter voltage: 80V
Application: automotive industry
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| 1PS76SB10,115 |
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Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
на замовлення 4 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 105.85 грн |
| 1PS76SB10,135 |
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Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 30V; 0.2A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Case: SOD323
Load current: 0.2A
Max. forward impulse current: 0.6A
Max. forward voltage: 0.8V
Max. off-state voltage: 30V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 30V; 0.2A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Case: SOD323
Load current: 0.2A
Max. forward impulse current: 0.6A
Max. forward voltage: 0.8V
Max. off-state voltage: 30V
на замовлення 913 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.16 грн |
| 58+ | 6.84 грн |
| 100+ | 4.67 грн |
| 500+ | 3.55 грн |
| 504+ | 1.84 грн |
| 1PS76SB10-QX |
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Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 30V; 0.2A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Case: SOD323
Load current: 0.2A
Max. forward impulse current: 0.6A
Max. forward voltage: 0.8V
Max. off-state voltage: 30V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 30V; 0.2A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Case: SOD323
Load current: 0.2A
Max. forward impulse current: 0.6A
Max. forward voltage: 0.8V
Max. off-state voltage: 30V
на замовлення 90 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.32 грн |
| 62+ | 6.37 грн |
| 1PS76SB10-QZ |
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на замовлення 45000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.85 грн |
| PESD5V0C2UMYL |
на замовлення 20000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 7.03 грн |
| NX3020NAKV,115 |
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Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 120mA; Idm: 0.8A; 375mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.12A
Power dissipation: 375mW
Case: SOT666
Gate-source voltage: ±20V
On-state resistance: 9.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.44nC
Pulsed drain current: 0.8A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 120mA; Idm: 0.8A; 375mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.12A
Power dissipation: 375mW
Case: SOT666
Gate-source voltage: ±20V
On-state resistance: 9.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.44nC
Pulsed drain current: 0.8A
на замовлення 864 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 27.95 грн |
| 20+ | 19.97 грн |
| 25+ | 16.28 грн |
| 100+ | 7.39 грн |
| 174+ | 5.35 грн |
| 477+ | 5.03 грн |
| PMBT2907AMYL |
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на замовлення 20000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 4.17 грн |
| BZX84-C6V2-QR |
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Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 6.2V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 6.2V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Application: automotive industry
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| BZX84-C6V2,235 |
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Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 6.2V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Leakage current: 3µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 6.2V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Leakage current: 3µA
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| BC857B,235 |
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Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Pulsed collector current: 0.2A
Mounting: SMD
Kind of package: 11 inch reel; tape
Frequency: 100MHz
Current gain: 220...475
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Pulsed collector current: 0.2A
Mounting: SMD
Kind of package: 11 inch reel; tape
Frequency: 100MHz
Current gain: 220...475
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| BAV102,115 |
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Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 250mA; 50ns; SOD80; Ufmax: 1.25V; 400mW
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Type of diode: switching
Reverse recovery time: 50ns
Load current: 0.25A
Max. forward voltage: 1.25V
Power dissipation: 0.4W
Max. load current: 0.625A
Max. forward impulse current: 9A
Max. off-state voltage: 200V
Case: SOD80
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 250mA; 50ns; SOD80; Ufmax: 1.25V; 400mW
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Type of diode: switching
Reverse recovery time: 50ns
Load current: 0.25A
Max. forward voltage: 1.25V
Power dissipation: 0.4W
Max. load current: 0.625A
Max. forward impulse current: 9A
Max. off-state voltage: 200V
Case: SOD80
Kind of package: reel; tape
на замовлення 1459 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 22.36 грн |
| 32+ | 12.35 грн |
| 37+ | 10.69 грн |
| 57+ | 7.00 грн |
| 100+ | 5.82 грн |
| BAT754C,215 |
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Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.6V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.6V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
на замовлення 1184 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 35+ | 12.11 грн |
| 43+ | 9.28 грн |
| 46+ | 8.65 грн |
| 55+ | 7.23 грн |
| 100+ | 6.68 грн |
| GAN080-650EBEZ |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 29A; Idm: 58A; 240W
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 29A
Pulsed drain current: 58A
Case: DFN8080-8
Gate-source voltage: -6...7V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 6.2nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Power dissipation: 240W
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 29A; Idm: 58A; 240W
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 29A
Pulsed drain current: 58A
Case: DFN8080-8
Gate-source voltage: -6...7V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 6.2nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Power dissipation: 240W
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| GAN140-650EBEZ |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 17A; Idm: 32A; 113W
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 32A
Case: DFN8080-8
Gate-source voltage: -1.4...7V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Power dissipation: 113W
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 17A; Idm: 32A; 113W
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 32A
Case: DFN8080-8
Gate-source voltage: -1.4...7V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Power dissipation: 113W
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| GAN140-650FBEZ |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 17A; Idm: 32A; 113W
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 32A
Case: DFN5060-5
Gate-source voltage: -1.4...7V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Power dissipation: 113W
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 17A; Idm: 32A; 113W
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 32A
Case: DFN5060-5
Gate-source voltage: -1.4...7V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Power dissipation: 113W
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| GAN190-650EBEZ |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11.5A; Idm: 20.5A
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 11.5A
Pulsed drain current: 20.5A
Case: DFN8080-8
Gate-source voltage: -1.4...7V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 2.8nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Power dissipation: 125W
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11.5A; Idm: 20.5A
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 11.5A
Pulsed drain current: 20.5A
Case: DFN8080-8
Gate-source voltage: -1.4...7V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 2.8nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Power dissipation: 125W
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| GAN190-650FBEZ |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11.5A; Idm: 20.5A
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 11.5A
Pulsed drain current: 20.5A
Case: DFN5060-5
Gate-source voltage: -1.4...7V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 2.8nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Power dissipation: 125W
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11.5A; Idm: 20.5A
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 11.5A
Pulsed drain current: 20.5A
Case: DFN5060-5
Gate-source voltage: -1.4...7V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 2.8nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Power dissipation: 125W
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| GAN3R2-100CBEAZ |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 100V; 60A; Idm: 230A; 394W
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 230A
Case: WLCSP8
Gate-source voltage: -4...6V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: tape
Kind of channel: enhancement
Power dissipation: 394W
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 100V; 60A; Idm: 230A; 394W
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 230A
Case: WLCSP8
Gate-source voltage: -4...6V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: tape
Kind of channel: enhancement
Power dissipation: 394W
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| GAN7R0-150LBEZ |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 150V; 28A; Idm: 120A; 28W
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 150V
Drain current: 28A
Pulsed drain current: 120A
Case: FCLGA3
Gate-source voltage: -4...6V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 7.6nC
Kind of package: tape
Kind of channel: enhancement
Power dissipation: 28W
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 150V; 28A; Idm: 120A; 28W
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 150V
Drain current: 28A
Pulsed drain current: 120A
Case: FCLGA3
Gate-source voltage: -4...6V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 7.6nC
Kind of package: tape
Kind of channel: enhancement
Power dissipation: 28W
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| BUK9M11-40HX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 193A; 50W
Case: LFPAK33; SOT1210
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Gate charge: 21nC
On-state resistance: 27.2mΩ
Power dissipation: 50W
Drain current: 34A
Drain-source voltage: 40V
Pulsed drain current: 193A
Application: automotive industry
Polarisation: unipolar
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 193A; 50W
Case: LFPAK33; SOT1210
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Gate charge: 21nC
On-state resistance: 27.2mΩ
Power dissipation: 50W
Drain current: 34A
Drain-source voltage: 40V
Pulsed drain current: 193A
Application: automotive industry
Polarisation: unipolar
Kind of channel: enhancement
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| 1PS76SB21,115 |
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Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 40V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 1A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 40V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 1A
Kind of package: reel; tape
на замовлення 418 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.16 грн |
| 48+ | 8.26 грн |
| 100+ | 6.37 грн |
| PBSS5220PAPSX |
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Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 20V; 2A; DFN2020D-6,SOT1118D
Mounting: SMD
Case: DFN2020D-6; SOT1118D
Kind of package: reel; tape
Collector current: 2A
Collector-emitter voltage: 20V
Current gain: 100...400
Frequency: 95MHz
Polarisation: bipolar
Type of transistor: PNP x2
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 20V; 2A; DFN2020D-6,SOT1118D
Mounting: SMD
Case: DFN2020D-6; SOT1118D
Kind of package: reel; tape
Collector current: 2A
Collector-emitter voltage: 20V
Current gain: 100...400
Frequency: 95MHz
Polarisation: bipolar
Type of transistor: PNP x2
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| NX138AKVL |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 0.12A; Idm: 0.765A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.12A
Pulsed drain current: 0.765A
Power dissipation: 0.265W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 0.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 0.12A; Idm: 0.765A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.12A
Pulsed drain current: 0.765A
Power dissipation: 0.265W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 0.9nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 8974 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 120+ | 4.19 грн |
| 140+ | 3.09 грн |
| 500+ | 2.73 грн |
| 3000+ | 2.45 грн |
| 74LVT14D,118 |
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Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; hex,inverter,Schmitt trigger; NOT; Ch: 6; IN: 1; TTL
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: 6
Mounting: SMD
Case: SO14
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVT
Kind of integrated circuit: hex; inverter; Schmitt trigger
Technology: TTL
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; hex,inverter,Schmitt trigger; NOT; Ch: 6; IN: 1; TTL
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: 6
Mounting: SMD
Case: SO14
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVT
Kind of integrated circuit: hex; inverter; Schmitt trigger
Technology: TTL
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Number of inputs: 1
на замовлення 1391 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 96.54 грн |
| 10+ | 64.48 грн |
| 25+ | 58.66 грн |
| 100+ | 51.82 грн |
| 250+ | 48.68 грн |
| 500+ | 48.28 грн |
| 74LVT14PW,118 |
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Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; hex,inverter,Schmitt trigger; NOT; Ch: 6; IN: 1; TTL
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: 6
Mounting: SMD
Case: TSSOP14
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVT
Kind of integrated circuit: hex; inverter; Schmitt trigger
Technology: TTL
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; hex,inverter,Schmitt trigger; NOT; Ch: 6; IN: 1; TTL
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: 6
Mounting: SMD
Case: TSSOP14
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVT
Kind of integrated circuit: hex; inverter; Schmitt trigger
Technology: TTL
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Number of inputs: 1
на замовлення 944 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 94.00 грн |
| 10+ | 63.07 грн |
| 25+ | 55.99 грн |
| 50+ | 51.66 грн |
| 100+ | 50.64 грн |
| 74HCT7541D,118 |
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Виробник: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS,TTL
Operating temperature: -40...125°C
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Kind of output: 3-state
Kind of integrated circuit: buffer; line driver; non-inverting
Family: HCT
Technology: CMOS; TTL
Type of integrated circuit: digital
Kind of package: reel; tape
Mounting: SMD
Case: SO20
Kind of input: with Schmitt trigger
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS,TTL
Operating temperature: -40...125°C
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Kind of output: 3-state
Kind of integrated circuit: buffer; line driver; non-inverting
Family: HCT
Technology: CMOS; TTL
Type of integrated circuit: digital
Kind of package: reel; tape
Mounting: SMD
Case: SO20
Kind of input: with Schmitt trigger
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| 74VHCT541D,118 |
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Виробник: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,8bit,buffer,octal,line driver; Ch: 1; IN: 10
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; buffer; line driver; octal
Number of channels: 1
Technology: TTL
Mounting: SMD
Case: SO20
Operating temperature: -40...125°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Family: VHCT
Number of inputs: 10
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,8bit,buffer,octal,line driver; Ch: 1; IN: 10
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; buffer; line driver; octal
Number of channels: 1
Technology: TTL
Mounting: SMD
Case: SO20
Operating temperature: -40...125°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Family: VHCT
Number of inputs: 10
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| 74AUP2G240DC,125 |
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Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; 3-state,buffer,inverting,line driver; Ch: 2; IN: 2
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; inverting; line driver
Number of channels: 2
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: VSSOP8
Manufacturer series: Mini Logic
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: AUP
Category: Gates, inverters
Description: IC: digital; 3-state,buffer,inverting,line driver; Ch: 2; IN: 2
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; inverting; line driver
Number of channels: 2
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: VSSOP8
Manufacturer series: Mini Logic
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: AUP
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| 74AUP2G240GS,115 |
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Виробник: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,inverting,line driver; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; inverting; line driver
Technology: CMOS
Mounting: SMD
Case: XSON8
Manufacturer series: Mini Logic
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: AUP
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,inverting,line driver; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; inverting; line driver
Technology: CMOS
Mounting: SMD
Case: XSON8
Manufacturer series: Mini Logic
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: AUP
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| 74AUP2G240GT,115 |
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Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; 3-state,buffer,inverting,line driver; Ch: 2; IN: 2
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; inverting; line driver
Number of channels: 2
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: XSON8
Manufacturer series: Mini Logic
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: AUP
Category: Gates, inverters
Description: IC: digital; 3-state,buffer,inverting,line driver; Ch: 2; IN: 2
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; inverting; line driver
Number of channels: 2
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: XSON8
Manufacturer series: Mini Logic
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: AUP
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| BZV85-C27,113 |
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Виробник: NEXPERIA
Category: THT Zener diodes
Description: Diode: Zener; 1/1.3W; 27V; reel,tape; DO41; single diode; 500mA
Type of diode: Zener
Power dissipation: 1/1.3W
Zener voltage: 27V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Max. load current: 0.5A
Max. forward voltage: 1V
Category: THT Zener diodes
Description: Diode: Zener; 1/1.3W; 27V; reel,tape; DO41; single diode; 500mA
Type of diode: Zener
Power dissipation: 1/1.3W
Zener voltage: 27V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Max. load current: 0.5A
Max. forward voltage: 1V
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| BUK7M12-60EX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 37A; Idm: 211A; 75W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 24.8nC
On-state resistance: 27mΩ
Drain current: 37A
Power dissipation: 75W
Gate-source voltage: ±20V
Pulsed drain current: 211A
Drain-source voltage: 60V
Application: automotive industry
Case: LFPAK33; SOT1210
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 37A; Idm: 211A; 75W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 24.8nC
On-state resistance: 27mΩ
Drain current: 37A
Power dissipation: 75W
Gate-source voltage: ±20V
Pulsed drain current: 211A
Drain-source voltage: 60V
Application: automotive industry
Case: LFPAK33; SOT1210
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| PTVS5V0S1UR,115 |
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Виробник: NEXPERIA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 6.7V; 43.5A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.7V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Operating temperature: max. 150°C
Leakage current: 5µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 6.7V; 43.5A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.7V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Operating temperature: max. 150°C
Leakage current: 5µA
на замовлення 6455 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 35.57 грн |
| 15+ | 27.21 грн |
| 50+ | 17.93 грн |
| 100+ | 15.73 грн |
| 500+ | 11.87 грн |
| 1000+ | 10.54 грн |
| 1500+ | 9.91 грн |
| 3000+ | 9.83 грн |
| BAT721C,215 |
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Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.55V
Max. forward impulse current: 1A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.55V
Max. forward impulse current: 1A
Kind of package: reel; tape
на замовлення 2229 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 28.79 грн |
| 20+ | 19.74 грн |
| 50+ | 15.65 грн |
| 100+ | 14.00 грн |
| 500+ | 10.22 грн |
| 74LVC8T245BQ-Q100J |
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Виробник: NEXPERIA
Category: Level translators
Description: IC: digital; 8bit,bidirectional,transceiver,translator; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; bidirectional; transceiver; translator
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Case: DHVQFN24
Operating temperature: -40...125°C
Kind of output: 3-state
Family: LVC
Kind of package: reel; tape
Technology: CMOS
Category: Level translators
Description: IC: digital; 8bit,bidirectional,transceiver,translator; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; bidirectional; transceiver; translator
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Case: DHVQFN24
Operating temperature: -40...125°C
Kind of output: 3-state
Family: LVC
Kind of package: reel; tape
Technology: CMOS
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