Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
MM74HC4316M | onsemi |
![]() Packaging: Tube Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 70Ohm -3db Bandwidth: 100MHz Supplier Device Package: 16-SOIC Voltage - Supply, Single (V+): 2V ~ 12V Voltage - Supply, Dual (V±): ±2V ~ 6V Crosstalk: -50dB @ 1MHz Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Channel-to-Channel Matching (ΔRon): 5Ohm Switch Time (Ton, Toff) (Max): 14ns, 20ns Current - Leakage (IS(off)) (Max): 100nA Number of Circuits: 4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
KST13MTF | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Darlington Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Frequency - Transition: 125MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 350 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
KST13MTF | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Darlington Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Frequency - Transition: 125MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 350 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
FAN5776UCX | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 12-UFBGA, WLCSP Voltage - Output: 3.5V ~ 8.5V Mounting Type: Surface Mount Number of Outputs: 5 Frequency: 1.8MHz Type: DC DC Regulator Operating Temperature: -40°C ~ 85°C (TA) Applications: Backlight Current - Output / Channel: 25mA Internal Switch(s): Yes Topology: Step-Up (Boost) Supplier Device Package: 12-WLCSP (1.42x1.66) Dimming: PWM Voltage - Supply (Min): 2.3V Voltage - Supply (Max): 5.5V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
FAN5776UCX | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 12-UFBGA, WLCSP Voltage - Output: 3.5V ~ 8.5V Mounting Type: Surface Mount Number of Outputs: 5 Frequency: 1.8MHz Type: DC DC Regulator Operating Temperature: -40°C ~ 85°C (TA) Applications: Backlight Current - Output / Channel: 25mA Internal Switch(s): Yes Topology: Step-Up (Boost) Supplier Device Package: 12-WLCSP (1.42x1.66) Dimming: PWM Voltage - Supply (Min): 2.3V Voltage - Supply (Max): 5.5V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
HT8822N | onsemi |
Description: IC PWR CONV TBD 8-MDIP Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
![]() |
MC33164P-5RAG | onsemi |
![]() Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Output: Open Drain or Open Collector Type: Simple Reset/Power-On Reset Reset: Active Low Operating Temperature: -40°C ~ 125°C (TA) Number of Voltages Monitored: 1 Voltage - Threshold: 4.33V Supplier Device Package: TO-92 (TO-226) DigiKey Programmable: Not Verified |
на замовлення 8708 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
74VHC112M | onsemi |
![]() Packaging: Bulk Package / Case: 16-SOIC (0.154", 3.90mm Width) Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 2 Function: Set(Preset) and Reset Type: JK Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 5.5V Current - Quiescent (Iq): 2 µA Current - Output High, Low: 8mA, 8mA Trigger Type: Negative Edge Clock Frequency: 185 MHz Input Capacitance: 4 pF Supplier Device Package: 16-SOIC Max Propagation Delay @ V, Max CL: 10.5ns @ 5V, 50pF Number of Bits per Element: 1 |
на замовлення 132480 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
74VHC112M | onsemi |
![]() Packaging: Tube Package / Case: 16-SOIC (0.154", 3.90mm Width) Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 2 Function: Set(Preset) and Reset Type: JK Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 5.5V Current - Quiescent (Iq): 2 µA Current - Output High, Low: 8mA, 8mA Trigger Type: Negative Edge Clock Frequency: 185 MHz Input Capacitance: 4 pF Supplier Device Package: 16-SOIC Max Propagation Delay @ V, Max CL: 10.5ns @ 5V, 50pF Number of Bits per Element: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
UF3C170400B7S | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc) Rds On (Max) @ Id, Vgs: 515mOhm @ 5A, 12V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 734 pF @ 1200 V |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
UF3C170400B7S | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc) Rds On (Max) @ Id, Vgs: 515mOhm @ 5A, 12V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 734 pF @ 1200 V |
на замовлення 3227 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
UJ4C075060K3S | onsemi |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V Power Dissipation (Max): 155W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TO-247-3 Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1422 pF @ 100 V |
на замовлення 14453 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
UJ4C075060K4S | onsemi |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V Power Dissipation (Max): 155W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TO-247-4 Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1422 pF @ 100 V |
на замовлення 1098 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
UJ3C120080K3S | onsemi |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 12V Power Dissipation (Max): 254.2W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V |
на замовлення 4151 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
UJ4SC075018B7S | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 12V Power Dissipation (Max): 259W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1414 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
UJ4SC075018B7S | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 12V Power Dissipation (Max): 259W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1414 pF @ 400 V |
на замовлення 319 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
UF3SC120040B7S | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 35A, 12V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
UF3SC120040B7S | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 35A, 12V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V |
на замовлення 2353 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
UJ4SC075005L8S | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 12V Power Dissipation (Max): 1153W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 8374 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
UJ4SC075005L8S | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 12V Power Dissipation (Max): 1153W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 8374 pF @ 400 V |
на замовлення 787 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
UF3C120400B7S | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc) Rds On (Max) @ Id, Vgs: 515mOhm @ 5A, 12V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 739 pF @ 800 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
UF3C120400B7S | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc) Rds On (Max) @ Id, Vgs: 515mOhm @ 5A, 12V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 739 pF @ 800 V |
на замовлення 1410 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
UJ4C075060B7S | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25.8A (Tc) Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V Power Dissipation (Max): 128W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
UJ4C075060B7S | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25.8A (Tc) Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V Power Dissipation (Max): 128W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 400 V |
на замовлення 532 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
UF3C120150B7S | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 12V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 10mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 25.7 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 738 pF @ 100 V |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
UF3C120150B7S | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 12V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 10mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 25.7 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 738 pF @ 100 V |
на замовлення 2820 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
UF3C065080B7S | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 20A, 12V Power Dissipation (Max): 136.4W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: D2PAK-7 Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 100 V |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
UF3C065080B7S | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 20A, 12V Power Dissipation (Max): 136.4W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: D2PAK-7 Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 100 V |
на замовлення 2928 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
UJ4C075033B7S | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 12V Power Dissipation (Max): 197W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
UJ4C075033B7S | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 12V Power Dissipation (Max): 197W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V |
на замовлення 511 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
UF3C120080B7S | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28.8A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 20A, 12V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: D2PAK-7 Vgs (Max): ±25V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 754 pF @ 100 V |
на замовлення 3800 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
UF3C120080B7S | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28.8A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 20A, 12V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: D2PAK-7 Vgs (Max): ±25V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 754 pF @ 100 V |
на замовлення 4103 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
UF3SC065030B7S | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 40A, 12V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
UF3SC065030B7S | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 40A, 12V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V |
на замовлення 2624 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
UJ4SC075011B7S | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 104A (Tc) Rds On (Max) @ Id, Vgs: 14.2mOhm @ 60A, 12V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 10mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
UJ4SC075011B7S | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 104A (Tc) Rds On (Max) @ Id, Vgs: 14.2mOhm @ 60A, 12V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 10mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 400 V |
на замовлення 670 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
NTH4L013N120M3S | onsemi |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 151A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 75A, 18V Power Dissipation (Max): 682W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 37mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 254 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 5813 pF @ 800 V |
на замовлення 319 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
MOC8102 | onsemi |
![]() Packaging: Tube Package / Case: 6-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5300Vrms Current Transfer Ratio (Min): 73% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 117% @ 10mA Supplier Device Package: 6-DIP Voltage - Output (Max): 30V Turn On / Turn Off Time (Typ): 2µs, 3µs Rise / Fall Time (Typ): 1µs, 2µs Number of Channels: 1 Current - DC Forward (If) (Max): 100 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
MC100E137FN | onsemi |
![]() Packaging: Tube Package / Case: 28-LCC (J-Lead) Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Binary Counter Reset: Asynchronous Operating Temperature: 0°C ~ 85°C Direction: Up Trigger Type: Positive, Negative Timing: Asynchronous Supplier Device Package: 28-PLCC (11.51x11.51) Voltage - Supply: 4.2 V ~ 5.5 V Count Rate: 2.2 GHz Number of Bits per Element: 8 |
на замовлення 1909 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
MC10E137FNR2G | onsemi |
![]() Packaging: Bulk Package / Case: 28-LCC (J-Lead) Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Binary Counter Reset: Asynchronous Operating Temperature: 0°C ~ 85°C Direction: Up Trigger Type: Positive, Negative Timing: Asynchronous Supplier Device Package: 28-PLCC (11.51x11.51) Voltage - Supply: 4.2 V ~ 5.7 V Count Rate: 2.2 GHz Number of Bits per Element: 8 |
на замовлення 6681 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
MC100E137FNR2G | onsemi |
![]() Packaging: Bulk Package / Case: 28-LCC (J-Lead) Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Binary Counter Reset: Asynchronous Operating Temperature: 0°C ~ 85°C Direction: Up Trigger Type: Positive, Negative Timing: Asynchronous Supplier Device Package: 28-PLCC (11.51x11.51) Voltage - Supply: 4.2 V ~ 5.5 V Count Rate: 2.2 GHz Number of Bits per Element: 8 |
на замовлення 880 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
MC10E137FNG | onsemi |
![]() Packaging: Bulk Package / Case: 28-LCC (J-Lead) Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Binary Counter Reset: Asynchronous Operating Temperature: 0°C ~ 85°C Direction: Up Trigger Type: Positive, Negative Timing: Asynchronous Supplier Device Package: 28-PLCC (11.51x11.51) Voltage - Supply: 4.2 V ~ 5.7 V Count Rate: 2.2 GHz Number of Bits per Element: 8 |
на замовлення 3215 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
SN74LS367ADR2 | onsemi |
![]() Packaging: Bulk |
на замовлення 50000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
MCT6 | onsemi |
![]() Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.2V Input Type: DC Current - Output / Channel: 30mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 20% @ 10mA Vce Saturation (Max): 400mV Supplier Device Package: 8-DIP Voltage - Output (Max): 30V Turn On / Turn Off Time (Typ): 3µs, 3µs Number of Channels: 2 Current - DC Forward (If) (Max): 60 mA |
на замовлення 6944 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
UF3SC120016K3S | onsemi |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 107A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 50A, 12V Power Dissipation (Max): 517W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 7824 pF @ 800 V |
на замовлення 1110 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
UF3SC120016K4S | onsemi |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 107A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 50A, 12V Power Dissipation (Max): 517W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 7824 pF @ 800 V |
на замовлення 1107 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
DFD05TL-BT | onsemi |
![]() Packaging: Bulk |
на замовлення 99000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
![]() |
NLV74HC04ADR2G | onsemi |
![]() Packaging: Bulk Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 5.2mA, 5.2mA Number of Inputs: 1 Supplier Device Package: 14-SOIC Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.5V ~ 1.8V Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF Grade: Automotive Number of Circuits: 6 Current - Quiescent (Max): 1 µA Qualification: AEC-Q100 |
на замовлення 75965 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
BSP50 | onsemi |
![]() ![]() Packaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V Supplier Device Package: SOT-223-4 Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 1 W |
на замовлення 3900 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
MBR2080CT | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 80 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
IRF540 | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V |
на замовлення 1200 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
3MN03SF-TL-E | onsemi |
![]() Packaging: Bulk Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: NPN Power - Max: 150mW Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 20V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1mA, 6V Frequency - Transition: 320MHz Noise Figure (dB Typ @ f): 3dB @ 100MHz Supplier Device Package: 3-SSFP |
на замовлення 192000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
MMSD485B | onsemi |
![]() Packaging: Bulk Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Supplier Device Package: SOD-123 Operating Temperature - Junction: 150°C (Max) |
на замовлення 39000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
SZESD5Z5.0T1G | onsemi |
Description: TVS DIODE 5VWM 18.6VC SOD523 Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 80pF @ 1MHz Current - Peak Pulse (10/1000µs): 9.4A Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SOD-523 Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.2V Voltage - Clamping (Max) @ Ipp: 18.6V Power - Peak Pulse: 240W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
NCS2554DTBR2G | onsemi |
![]() Packaging: Bulk Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Applications: Reconstruction Filter Voltage - Supply, Single/Dual (±): 4.7V ~ 5.3V Supplier Device Package: 14-TSSOP Number of Circuits: 4 Current - Supply: 40 mA Current - Output / Channel: 40 mA -3db Bandwidth: 8 MHz |
на замовлення 11275 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
CM1457-04CP | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 10-WFBGA, WLCSP Size / Dimension: 0.066" L x 0.041" W (1.67mm x 1.05mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: L = 70nH (Total), C = 12.5pF (Total) Height: 0.027" (0.69mm) Attenuation Value: -35dB @ 800MHz ~ 2.7GHz Filter Order: 5th Applications: Data Lines for Mobile Devices Technology: LC (Pi) Center / Cutoff Frequency: 300MHz (Cutoff) Resistance - Channel (Ohms): 45 ESD Protection: Yes Number of Channels: 4 Current: 15 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
CM1457-04CP | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 10-WFBGA, WLCSP Size / Dimension: 0.066" L x 0.041" W (1.67mm x 1.05mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: L = 70nH (Total), C = 12.5pF (Total) Height: 0.027" (0.69mm) Attenuation Value: -35dB @ 800MHz ~ 2.7GHz Filter Order: 5th Applications: Data Lines for Mobile Devices Technology: LC (Pi) Center / Cutoff Frequency: 300MHz (Cutoff) Resistance - Channel (Ohms): 45 ESD Protection: Yes Number of Channels: 4 Current: 15 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
![]() |
FFSB1065B | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 421pF @ 1V, 100kHz Current - Average Rectified (Io): 27A Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
FFSB1065B | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 421pF @ 1V, 100kHz Current - Average Rectified (Io): 27A Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
на замовлення 686 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
FFSB1065B-F085 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 421pF @ 1V, 100kHz Current - Average Rectified (Io): 27A Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V Qualification: AEC-Q101 |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
|
MM74HC4316M |
![]() |
Виробник: onsemi
Description: IC SWITCH SPST-NOX4 70OHM 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 70Ohm
-3db Bandwidth: 100MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2V ~ 12V
Voltage - Supply, Dual (V±): ±2V ~ 6V
Crosstalk: -50dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 5Ohm
Switch Time (Ton, Toff) (Max): 14ns, 20ns
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 4
Description: IC SWITCH SPST-NOX4 70OHM 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 70Ohm
-3db Bandwidth: 100MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2V ~ 12V
Voltage - Supply, Dual (V±): ±2V ~ 6V
Crosstalk: -50dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 5Ohm
Switch Time (Ton, Toff) (Max): 14ns, 20ns
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 4
товару немає в наявності
В кошику
од. на суму грн.
KST13MTF |
![]() |
Виробник: onsemi
Description: TRANS NPN DARL 30V 0.3A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 350 mW
Description: TRANS NPN DARL 30V 0.3A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 350 mW
товару немає в наявності
В кошику
од. на суму грн.
KST13MTF |
![]() |
Виробник: onsemi
Description: TRANS NPN DARL 30V 0.3A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 350 mW
Description: TRANS NPN DARL 30V 0.3A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 350 mW
товару немає в наявності
В кошику
од. на суму грн.
FAN5776UCX |
![]() |
Виробник: onsemi
Description: IC LED DRV RGLTR PWM 12WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 12-UFBGA, WLCSP
Voltage - Output: 3.5V ~ 8.5V
Mounting Type: Surface Mount
Number of Outputs: 5
Frequency: 1.8MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 25mA
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: 12-WLCSP (1.42x1.66)
Dimming: PWM
Voltage - Supply (Min): 2.3V
Voltage - Supply (Max): 5.5V
Description: IC LED DRV RGLTR PWM 12WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 12-UFBGA, WLCSP
Voltage - Output: 3.5V ~ 8.5V
Mounting Type: Surface Mount
Number of Outputs: 5
Frequency: 1.8MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 25mA
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: 12-WLCSP (1.42x1.66)
Dimming: PWM
Voltage - Supply (Min): 2.3V
Voltage - Supply (Max): 5.5V
товару немає в наявності
В кошику
од. на суму грн.
FAN5776UCX |
![]() |
Виробник: onsemi
Description: IC LED DRV RGLTR PWM 12WLCSP
Packaging: Cut Tape (CT)
Package / Case: 12-UFBGA, WLCSP
Voltage - Output: 3.5V ~ 8.5V
Mounting Type: Surface Mount
Number of Outputs: 5
Frequency: 1.8MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 25mA
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: 12-WLCSP (1.42x1.66)
Dimming: PWM
Voltage - Supply (Min): 2.3V
Voltage - Supply (Max): 5.5V
Description: IC LED DRV RGLTR PWM 12WLCSP
Packaging: Cut Tape (CT)
Package / Case: 12-UFBGA, WLCSP
Voltage - Output: 3.5V ~ 8.5V
Mounting Type: Surface Mount
Number of Outputs: 5
Frequency: 1.8MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 25mA
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: 12-WLCSP (1.42x1.66)
Dimming: PWM
Voltage - Supply (Min): 2.3V
Voltage - Supply (Max): 5.5V
товару немає в наявності
В кошику
од. на суму грн.
MC33164P-5RAG |
![]() |
Виробник: onsemi
Description: IC SUPERVISOR 1 CHANNEL TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 4.33V
Supplier Device Package: TO-92 (TO-226)
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR 1 CHANNEL TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 4.33V
Supplier Device Package: TO-92 (TO-226)
DigiKey Programmable: Not Verified
на замовлення 8708 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
975+ | 23.83 грн |
74VHC112M |
![]() |
Виробник: onsemi
Description: IC FF JK TYPE DUAL 1BIT 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: JK Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Iq): 2 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Negative Edge
Clock Frequency: 185 MHz
Input Capacitance: 4 pF
Supplier Device Package: 16-SOIC
Max Propagation Delay @ V, Max CL: 10.5ns @ 5V, 50pF
Number of Bits per Element: 1
Description: IC FF JK TYPE DUAL 1BIT 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: JK Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Iq): 2 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Negative Edge
Clock Frequency: 185 MHz
Input Capacitance: 4 pF
Supplier Device Package: 16-SOIC
Max Propagation Delay @ V, Max CL: 10.5ns @ 5V, 50pF
Number of Bits per Element: 1
на замовлення 132480 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
457+ | 50.85 грн |
74VHC112M |
![]() |
Виробник: onsemi
Description: IC FF JK TYPE DUAL 1BIT 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: JK Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Iq): 2 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Negative Edge
Clock Frequency: 185 MHz
Input Capacitance: 4 pF
Supplier Device Package: 16-SOIC
Max Propagation Delay @ V, Max CL: 10.5ns @ 5V, 50pF
Number of Bits per Element: 1
Description: IC FF JK TYPE DUAL 1BIT 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: JK Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Iq): 2 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Negative Edge
Clock Frequency: 185 MHz
Input Capacitance: 4 pF
Supplier Device Package: 16-SOIC
Max Propagation Delay @ V, Max CL: 10.5ns @ 5V, 50pF
Number of Bits per Element: 1
товару немає в наявності
В кошику
од. на суму грн.
UF3C170400B7S |
![]() |
Виробник: onsemi
Description: SICFET N-CH 1700V 7.6A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 515mOhm @ 5A, 12V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 734 pF @ 1200 V
Description: SICFET N-CH 1700V 7.6A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 515mOhm @ 5A, 12V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 734 pF @ 1200 V
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
800+ | 352.12 грн |
UF3C170400B7S |
![]() |
Виробник: onsemi
Description: SICFET N-CH 1700V 7.6A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 515mOhm @ 5A, 12V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 734 pF @ 1200 V
Description: SICFET N-CH 1700V 7.6A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 515mOhm @ 5A, 12V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 734 pF @ 1200 V
на замовлення 3227 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 699.43 грн |
10+ | 471.31 грн |
100+ | 415.04 грн |
UJ4C075060K3S |
![]() |
Виробник: onsemi
Description: SICFET N-CH 750V 28A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V
Power Dissipation (Max): 155W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1422 pF @ 100 V
Description: SICFET N-CH 750V 28A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V
Power Dissipation (Max): 155W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1422 pF @ 100 V
на замовлення 14453 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 947.56 грн |
30+ | 577.69 грн |
120+ | 542.01 грн |
510+ | 425.05 грн |
UJ4C075060K4S |
![]() |
Виробник: onsemi
Description: SICFET N-CH 750V 28A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V
Power Dissipation (Max): 155W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-4
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1422 pF @ 100 V
Description: SICFET N-CH 750V 28A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V
Power Dissipation (Max): 155W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-4
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1422 pF @ 100 V
на замовлення 1098 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 880.91 грн |
30+ | 507.68 грн |
120+ | 433.02 грн |
510+ | 382.09 грн |
UJ3C120080K3S |
![]() |
Виробник: onsemi
Description: SICFET N-CH 1200V 33A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 12V
Power Dissipation (Max): 254.2W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Description: SICFET N-CH 1200V 33A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 12V
Power Dissipation (Max): 254.2W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
на замовлення 4151 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1288.04 грн |
30+ | 863.77 грн |
120+ | 795.29 грн |
UJ4SC075018B7S |
![]() |
Виробник: onsemi
Description: 750V/18MOHM, N-OFF SIC STACK CAS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 12V
Power Dissipation (Max): 259W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1414 pF @ 400 V
Description: 750V/18MOHM, N-OFF SIC STACK CAS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 12V
Power Dissipation (Max): 259W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1414 pF @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
UJ4SC075018B7S |
![]() |
Виробник: onsemi
Description: 750V/18MOHM, N-OFF SIC STACK CAS
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 12V
Power Dissipation (Max): 259W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1414 pF @ 400 V
Description: 750V/18MOHM, N-OFF SIC STACK CAS
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 12V
Power Dissipation (Max): 259W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1414 pF @ 400 V
на замовлення 319 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1711.23 грн |
10+ | 1189.84 грн |
100+ | 1185.15 грн |
UF3SC120040B7S |
![]() |
Виробник: onsemi
Description: 1200V/40MOHM, SIC, STACKED FAST
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 35A, 12V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Description: 1200V/40MOHM, SIC, STACKED FAST
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 35A, 12V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
800+ | 1512.89 грн |
UF3SC120040B7S |
![]() |
Виробник: onsemi
Description: 1200V/40MOHM, SIC, STACKED FAST
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 35A, 12V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Description: 1200V/40MOHM, SIC, STACKED FAST
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 35A, 12V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
на замовлення 2353 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 2364.89 грн |
10+ | 1783.17 грн |
UJ4SC075005L8S |
![]() |
Виробник: onsemi
Description: SICFET N-CH 750V 120A TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 12V
Power Dissipation (Max): 1153W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 8374 pF @ 400 V
Description: SICFET N-CH 750V 120A TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 12V
Power Dissipation (Max): 1153W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 8374 pF @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
UJ4SC075005L8S |
![]() |
Виробник: onsemi
Description: SICFET N-CH 750V 120A TOLL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 12V
Power Dissipation (Max): 1153W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 8374 pF @ 400 V
Description: SICFET N-CH 750V 120A TOLL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 12V
Power Dissipation (Max): 1153W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 8374 pF @ 400 V
на замовлення 787 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 4286.51 грн |
UF3C120400B7S |
![]() |
Виробник: onsemi
Description: SICFET N-CH 1200V 7.6A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 515mOhm @ 5A, 12V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 739 pF @ 800 V
Description: SICFET N-CH 1200V 7.6A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 515mOhm @ 5A, 12V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 739 pF @ 800 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
800+ | 268.28 грн |
UF3C120400B7S |
![]() |
Виробник: onsemi
Description: SICFET N-CH 1200V 7.6A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 515mOhm @ 5A, 12V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 739 pF @ 800 V
Description: SICFET N-CH 1200V 7.6A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 515mOhm @ 5A, 12V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 739 pF @ 800 V
на замовлення 1410 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 611.10 грн |
10+ | 379.68 грн |
100+ | 316.22 грн |
UJ4C075060B7S |
![]() |
Виробник: onsemi
Description: 750V/60MOHM, N-OFF SIC CASCODE,
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25.8A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 400 V
Description: 750V/60MOHM, N-OFF SIC CASCODE,
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25.8A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
UJ4C075060B7S |
![]() |
Виробник: onsemi
Description: 750V/60MOHM, N-OFF SIC CASCODE,
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25.8A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 400 V
Description: 750V/60MOHM, N-OFF SIC CASCODE,
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25.8A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 400 V
на замовлення 532 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 509.92 грн |
25+ | 426.57 грн |
100+ | 367.97 грн |
250+ | 318.18 грн |
UF3C120150B7S |
![]() |
Виробник: onsemi
Description: 1200V/150MOHM, SIC, FAST CASCODE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 12V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 25.7 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 738 pF @ 100 V
Description: 1200V/150MOHM, SIC, FAST CASCODE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 12V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 25.7 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 738 pF @ 100 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
800+ | 389.19 грн |
UF3C120150B7S |
![]() |
Виробник: onsemi
Description: 1200V/150MOHM, SIC, FAST CASCODE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 12V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 25.7 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 738 pF @ 100 V
Description: 1200V/150MOHM, SIC, FAST CASCODE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 12V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 25.7 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 738 pF @ 100 V
на замовлення 2820 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 810.24 грн |
10+ | 535.11 грн |
100+ | 458.72 грн |
UF3C065080B7S |
![]() |
Виробник: onsemi
Description: SICFET N-CH 650V 27A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 20A, 12V
Power Dissipation (Max): 136.4W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 100 V
Description: SICFET N-CH 650V 27A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 20A, 12V
Power Dissipation (Max): 136.4W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 100 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
800+ | 432.63 грн |
UF3C065080B7S |
![]() |
Виробник: onsemi
Description: SICFET N-CH 650V 27A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 20A, 12V
Power Dissipation (Max): 136.4W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 100 V
Description: SICFET N-CH 650V 27A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 20A, 12V
Power Dissipation (Max): 136.4W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 100 V
на замовлення 2928 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 855.21 грн |
10+ | 593.41 грн |
100+ | 447.36 грн |
UJ4C075033B7S |
![]() |
Виробник: onsemi
Description: 750V/33MOHM, N-OFF SIC CASCODE,
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 12V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
Description: 750V/33MOHM, N-OFF SIC CASCODE,
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 12V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
UJ4C075033B7S |
![]() |
Виробник: onsemi
Description: 750V/33MOHM, N-OFF SIC CASCODE,
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 12V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
Description: 750V/33MOHM, N-OFF SIC CASCODE,
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 12V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
на замовлення 511 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 761.26 грн |
25+ | 636.53 грн |
100+ | 549.74 грн |
250+ | 474.83 грн |
UF3C120080B7S |
![]() |
Виробник: onsemi
Description: SICFET N-CH 1200V 28.8A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.8A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 20A, 12V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 754 pF @ 100 V
Description: SICFET N-CH 1200V 28.8A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.8A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 20A, 12V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 754 pF @ 100 V
на замовлення 3800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
800+ | 729.59 грн |
UF3C120080B7S |
![]() |
Виробник: onsemi
Description: SICFET N-CH 1200V 28.8A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.8A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 20A, 12V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 754 pF @ 100 V
Description: SICFET N-CH 1200V 28.8A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.8A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 20A, 12V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 754 pF @ 100 V
на замовлення 4103 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1207.74 грн |
10+ | 818.13 грн |
100+ | 703.77 грн |
UF3SC065030B7S |
![]() |
Виробник: onsemi
Description: 650V/30MOHM, SIC, STACKED FAST C
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 40A, 12V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Description: 650V/30MOHM, SIC, STACKED FAST C
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 40A, 12V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
800+ | 861.90 грн |
UF3SC065030B7S |
![]() |
Виробник: onsemi
Description: 650V/30MOHM, SIC, STACKED FAST C
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 40A, 12V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Description: 650V/30MOHM, SIC, STACKED FAST C
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 40A, 12V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
на замовлення 2624 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1288.04 грн |
25+ | 1077.95 грн |
100+ | 930.32 грн |
250+ | 803.45 грн |
UJ4SC075011B7S |
![]() |
Виробник: onsemi
Description: 750V/11MOHM, N-OFF SIC STACK CAS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 60A, 12V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 400 V
Description: 750V/11MOHM, N-OFF SIC STACK CAS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 60A, 12V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
UJ4SC075011B7S |
![]() |
Виробник: onsemi
Description: 750V/11MOHM, N-OFF SIC STACK CAS
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 60A, 12V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 400 V
Description: 750V/11MOHM, N-OFF SIC STACK CAS
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 60A, 12V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 400 V
на замовлення 670 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 2175.37 грн |
10+ | 1572.92 грн |
100+ | 1350.76 грн |
NTH4L013N120M3S |
![]() |
Виробник: onsemi
Description: DISCRETE SIC M3S 1200V 13MOHM
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 151A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 75A, 18V
Power Dissipation (Max): 682W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 37mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 254 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5813 pF @ 800 V
Description: DISCRETE SIC M3S 1200V 13MOHM
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 151A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 75A, 18V
Power Dissipation (Max): 682W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 37mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 254 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5813 pF @ 800 V
на замовлення 319 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 2299.84 грн |
10+ | 1840.86 грн |
MOC8102 |
![]() |
Виробник: onsemi
Description: OPTOISOLATOR 5.3KV TRANS 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5300Vrms
Current Transfer Ratio (Min): 73% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 117% @ 10mA
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 1µs, 2µs
Number of Channels: 1
Current - DC Forward (If) (Max): 100 mA
Description: OPTOISOLATOR 5.3KV TRANS 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5300Vrms
Current Transfer Ratio (Min): 73% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 117% @ 10mA
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 1µs, 2µs
Number of Channels: 1
Current - DC Forward (If) (Max): 100 mA
товару немає в наявності
В кошику
од. на суму грн.
MC100E137FN |
![]() |
Виробник: onsemi
Description: IC BINARY COUNTER 8-BIT 28PLCC
Packaging: Tube
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: 0°C ~ 85°C
Direction: Up
Trigger Type: Positive, Negative
Timing: Asynchronous
Supplier Device Package: 28-PLCC (11.51x11.51)
Voltage - Supply: 4.2 V ~ 5.5 V
Count Rate: 2.2 GHz
Number of Bits per Element: 8
Description: IC BINARY COUNTER 8-BIT 28PLCC
Packaging: Tube
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: 0°C ~ 85°C
Direction: Up
Trigger Type: Positive, Negative
Timing: Asynchronous
Supplier Device Package: 28-PLCC (11.51x11.51)
Voltage - Supply: 4.2 V ~ 5.5 V
Count Rate: 2.2 GHz
Number of Bits per Element: 8
на замовлення 1909 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
76+ | 305.85 грн |
MC10E137FNR2G |
![]() |
Виробник: onsemi
Description: IC BINARY COUNTER 8-BIT 28PLCC
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: 0°C ~ 85°C
Direction: Up
Trigger Type: Positive, Negative
Timing: Asynchronous
Supplier Device Package: 28-PLCC (11.51x11.51)
Voltage - Supply: 4.2 V ~ 5.7 V
Count Rate: 2.2 GHz
Number of Bits per Element: 8
Description: IC BINARY COUNTER 8-BIT 28PLCC
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: 0°C ~ 85°C
Direction: Up
Trigger Type: Positive, Negative
Timing: Asynchronous
Supplier Device Package: 28-PLCC (11.51x11.51)
Voltage - Supply: 4.2 V ~ 5.7 V
Count Rate: 2.2 GHz
Number of Bits per Element: 8
на замовлення 6681 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
47+ | 495.38 грн |
MC100E137FNR2G |
![]() |
Виробник: onsemi
Description: IC BINARY COUNTER 8-BIT 28PLCC
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: 0°C ~ 85°C
Direction: Up
Trigger Type: Positive, Negative
Timing: Asynchronous
Supplier Device Package: 28-PLCC (11.51x11.51)
Voltage - Supply: 4.2 V ~ 5.5 V
Count Rate: 2.2 GHz
Number of Bits per Element: 8
Description: IC BINARY COUNTER 8-BIT 28PLCC
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: 0°C ~ 85°C
Direction: Up
Trigger Type: Positive, Negative
Timing: Asynchronous
Supplier Device Package: 28-PLCC (11.51x11.51)
Voltage - Supply: 4.2 V ~ 5.5 V
Count Rate: 2.2 GHz
Number of Bits per Element: 8
на замовлення 880 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
47+ | 495.38 грн |
MC10E137FNG |
![]() |
Виробник: onsemi
Description: IC BINARY COUNTER 8-BIT 28PLCC
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: 0°C ~ 85°C
Direction: Up
Trigger Type: Positive, Negative
Timing: Asynchronous
Supplier Device Package: 28-PLCC (11.51x11.51)
Voltage - Supply: 4.2 V ~ 5.7 V
Count Rate: 2.2 GHz
Number of Bits per Element: 8
Description: IC BINARY COUNTER 8-BIT 28PLCC
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: 0°C ~ 85°C
Direction: Up
Trigger Type: Positive, Negative
Timing: Asynchronous
Supplier Device Package: 28-PLCC (11.51x11.51)
Voltage - Supply: 4.2 V ~ 5.7 V
Count Rate: 2.2 GHz
Number of Bits per Element: 8
на замовлення 3215 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
35+ | 673.34 грн |
SN74LS367ADR2 |
![]() |
на замовлення 50000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2049+ | 11.56 грн |
MCT6 |
![]() |
Виробник: onsemi
Description: OPTOISOLATOR 5KV 2CH TRANS 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 30mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 8-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Number of Channels: 2
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLATOR 5KV 2CH TRANS 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 30mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 8-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Number of Channels: 2
Current - DC Forward (If) (Max): 60 mA
на замовлення 6944 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 81.10 грн |
50+ | 44.48 грн |
100+ | 40.94 грн |
500+ | 32.47 грн |
1000+ | 30.53 грн |
2000+ | 28.88 грн |
5000+ | 26.63 грн |
UF3SC120016K3S |
![]() |
Виробник: onsemi
Description: SICFET N-CH 1200V 107A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 50A, 12V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 7824 pF @ 800 V
Description: SICFET N-CH 1200V 107A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 50A, 12V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 7824 pF @ 800 V
на замовлення 1110 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 3984.57 грн |
30+ | 2812.95 грн |
UF3SC120016K4S |
![]() |
Виробник: onsemi
Description: SICFET N-CH 1200V 107A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 50A, 12V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 7824 pF @ 800 V
Description: SICFET N-CH 1200V 107A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 50A, 12V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 7824 pF @ 800 V
на замовлення 1107 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 4414.99 грн |
30+ | 3805.11 грн |
DFD05TL-BT |
![]() |
на замовлення 99000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
11539+ | 2.31 грн |
NLV74HC04ADR2G |
![]() |
Виробник: onsemi
Description: IC INVERTER 6CH 1-INP 14SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 1
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Grade: Automotive
Number of Circuits: 6
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
Description: IC INVERTER 6CH 1-INP 14SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 1
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Grade: Automotive
Number of Circuits: 6
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
на замовлення 75965 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1066+ | 21.52 грн |
BSP50 | ![]() |
![]() |
Виробник: onsemi
Description: TRANS NPN DARL 45V 0.8A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Supplier Device Package: SOT-223-4
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1 W
Description: TRANS NPN DARL 45V 0.8A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Supplier Device Package: SOT-223-4
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1 W
на замовлення 3900 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1750+ | 13.10 грн |
MBR2080CT |
![]() |
Виробник: onsemi
Description: DIODE ARRAY SCHOT 80V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 80 V
Description: DIODE ARRAY SCHOT 80V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 80 V
товару немає в наявності
В кошику
од. на суму грн.
IRF540 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 100V 28A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Description: MOSFET N-CH 100V 28A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
на замовлення 1200 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
326+ | 64.70 грн |
3MN03SF-TL-E |
![]() |
Виробник: onsemi
Description: RF TRANS NPN 20V 320MHZ 3-SSFP
Packaging: Bulk
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Power - Max: 150mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1mA, 6V
Frequency - Transition: 320MHz
Noise Figure (dB Typ @ f): 3dB @ 100MHz
Supplier Device Package: 3-SSFP
Description: RF TRANS NPN 20V 320MHZ 3-SSFP
Packaging: Bulk
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Power - Max: 150mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1mA, 6V
Frequency - Transition: 320MHz
Noise Figure (dB Typ @ f): 3dB @ 100MHz
Supplier Device Package: 3-SSFP
на замовлення 192000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6662+ | 3.84 грн |
MMSD485B |
![]() |
Виробник: onsemi
Description: DIODE STANDARD SOD123
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
Description: DIODE STANDARD SOD123
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
на замовлення 39000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4365+ | 4.92 грн |
SZESD5Z5.0T1G |
Виробник: onsemi
Description: TVS DIODE 5VWM 18.6VC SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 80pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-523
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 18.6V
Power - Peak Pulse: 240W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 5VWM 18.6VC SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 80pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-523
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 18.6V
Power - Peak Pulse: 240W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10+ | 32.12 грн |
15+ | 21.11 грн |
100+ | 11.01 грн |
500+ | 7.91 грн |
1000+ | 7.21 грн |
NCS2554DTBR2G |
![]() |
Виробник: onsemi
Description: IC AMP REC FILTR 14TSSOP
Packaging: Bulk
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Applications: Reconstruction Filter
Voltage - Supply, Single/Dual (±): 4.7V ~ 5.3V
Supplier Device Package: 14-TSSOP
Number of Circuits: 4
Current - Supply: 40 mA
Current - Output / Channel: 40 mA
-3db Bandwidth: 8 MHz
Description: IC AMP REC FILTR 14TSSOP
Packaging: Bulk
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Applications: Reconstruction Filter
Voltage - Supply, Single/Dual (±): 4.7V ~ 5.3V
Supplier Device Package: 14-TSSOP
Number of Circuits: 4
Current - Supply: 40 mA
Current - Output / Channel: 40 mA
-3db Bandwidth: 8 MHz
на замовлення 11275 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
952+ | 24.50 грн |
CM1457-04CP |
![]() |
Виробник: onsemi
Description: FILTR LC(PI) 70NH/12.5PF ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 10-WFBGA, WLCSP
Size / Dimension: 0.066" L x 0.041" W (1.67mm x 1.05mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: L = 70nH (Total), C = 12.5pF (Total)
Height: 0.027" (0.69mm)
Attenuation Value: -35dB @ 800MHz ~ 2.7GHz
Filter Order: 5th
Applications: Data Lines for Mobile Devices
Technology: LC (Pi)
Center / Cutoff Frequency: 300MHz (Cutoff)
Resistance - Channel (Ohms): 45
ESD Protection: Yes
Number of Channels: 4
Current: 15 mA
Description: FILTR LC(PI) 70NH/12.5PF ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 10-WFBGA, WLCSP
Size / Dimension: 0.066" L x 0.041" W (1.67mm x 1.05mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: L = 70nH (Total), C = 12.5pF (Total)
Height: 0.027" (0.69mm)
Attenuation Value: -35dB @ 800MHz ~ 2.7GHz
Filter Order: 5th
Applications: Data Lines for Mobile Devices
Technology: LC (Pi)
Center / Cutoff Frequency: 300MHz (Cutoff)
Resistance - Channel (Ohms): 45
ESD Protection: Yes
Number of Channels: 4
Current: 15 mA
товару немає в наявності
В кошику
од. на суму грн.
CM1457-04CP |
![]() |
Виробник: onsemi
Description: FILTR LC(PI) 70NH/12.5PF ESD SMD
Packaging: Cut Tape (CT)
Package / Case: 10-WFBGA, WLCSP
Size / Dimension: 0.066" L x 0.041" W (1.67mm x 1.05mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: L = 70nH (Total), C = 12.5pF (Total)
Height: 0.027" (0.69mm)
Attenuation Value: -35dB @ 800MHz ~ 2.7GHz
Filter Order: 5th
Applications: Data Lines for Mobile Devices
Technology: LC (Pi)
Center / Cutoff Frequency: 300MHz (Cutoff)
Resistance - Channel (Ohms): 45
ESD Protection: Yes
Number of Channels: 4
Current: 15 mA
Description: FILTR LC(PI) 70NH/12.5PF ESD SMD
Packaging: Cut Tape (CT)
Package / Case: 10-WFBGA, WLCSP
Size / Dimension: 0.066" L x 0.041" W (1.67mm x 1.05mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: L = 70nH (Total), C = 12.5pF (Total)
Height: 0.027" (0.69mm)
Attenuation Value: -35dB @ 800MHz ~ 2.7GHz
Filter Order: 5th
Applications: Data Lines for Mobile Devices
Technology: LC (Pi)
Center / Cutoff Frequency: 300MHz (Cutoff)
Resistance - Channel (Ohms): 45
ESD Protection: Yes
Number of Channels: 4
Current: 15 mA
товару немає в наявності
В кошику
од. на суму грн.
FFSB1065B |
![]() |
Виробник: onsemi
Description: DIODE SIL CARBIDE 650V 27A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 421pF @ 1V, 100kHz
Current - Average Rectified (Io): 27A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 27A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 421pF @ 1V, 100kHz
Current - Average Rectified (Io): 27A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
товару немає в наявності
В кошику
од. на суму грн.
FFSB1065B |
![]() |
Виробник: onsemi
Description: DIODE SIL CARBIDE 650V 27A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 421pF @ 1V, 100kHz
Current - Average Rectified (Io): 27A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 27A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 421pF @ 1V, 100kHz
Current - Average Rectified (Io): 27A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
на замовлення 686 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 312.37 грн |
10+ | 197.65 грн |
100+ | 139.07 грн |
FFSB1065B-F085 |
![]() |
Виробник: onsemi
Description: DIODE SIL CARBIDE 650V 27A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 421pF @ 1V, 100kHz
Current - Average Rectified (Io): 27A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Qualification: AEC-Q101
Description: DIODE SIL CARBIDE 650V 27A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 421pF @ 1V, 100kHz
Current - Average Rectified (Io): 27A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Qualification: AEC-Q101
на замовлення 800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
800+ | 122.30 грн |