| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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DM74153N | onsemi |
Description: IC MULTIPLEXER 2 X 4:1 16-PDIPPackaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Circuit: 2 x 4:1 Type: Multiplexer Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.75V ~ 5.25V Independent Circuits: 1 Voltage Supply Source: Single Supply Supplier Device Package: 16-PDIP |
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FQAF15N70 | onsemi |
Description: MOSFET N-CH 700V 9.5A TO3PFPackaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc) Rds On (Max) @ Id, Vgs: 560mOhm @ 4.8A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V |
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| NSR20206NXT5G | onsemi |
Description: DIODE SCHOTTKY 20V 2A 2DSNPackaging: Bulk Package / Case: 0603 (1608 Metric) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Schottky Capacitance @ Vr, F: 140pF @ 0V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: 2-DSN (1.6x0.8) Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A Current - Reverse Leakage @ Vr: 150 µA @ 20 V |
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MMBTA56 | onsemi |
Description: TRANS PNP 80V 0.5A SOT-23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 50MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 350 mW |
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MJD340T4 | onsemi |
Description: TRANS NPN 300V 0.5A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Supplier Device Package: DPAK Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 15 W |
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DM74ALS163BN | onsemi |
Description: IC BINARY COUNTER 4-BIT 16DIPPackaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Number of Elements: 1 Logic Type: Binary Counter Reset: Synchronous Operating Temperature: 0°C ~ 70°C Direction: Up Trigger Type: Positive Edge Timing: Synchronous Supplier Device Package: 16-PDIP Voltage - Supply: 4.5 V ~ 5.5 V Count Rate: 40 MHz Number of Bits per Element: 4 |
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DM74ALS163BMX | onsemi |
Description: IC BINARY COUNTER 4-BIT 16SOICPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Binary Counter Reset: Synchronous Operating Temperature: 0°C ~ 70°C Direction: Up Trigger Type: Positive Edge Timing: Synchronous Supplier Device Package: 16-SOIC Voltage - Supply: 4.5 V ~ 5.5 V Count Rate: 40 MHz Number of Bits per Element: 4 |
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В кошику од. на суму грн. | ||||||||||||||
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DM74ALS163BM | onsemi |
Description: IC BINARY COUNTER 4-BIT 16SOICPackaging: Tube Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Binary Counter Reset: Synchronous Operating Temperature: 0°C ~ 70°C Direction: Up Trigger Type: Positive Edge Timing: Synchronous Supplier Device Package: 16-SOIC Voltage - Supply: 4.5 V ~ 5.5 V Count Rate: 40 MHz Number of Bits per Element: 4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MC74HC163ADTG | onsemi |
Description: IC BINARY COUNTER 4-BIT 16TSSOPPackaging: Bulk Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Binary Counter Reset: Synchronous Operating Temperature: -55°C ~ 125°C (TA) Direction: Up Trigger Type: Positive Edge Timing: Synchronous Supplier Device Package: 16-TSSOP Voltage - Supply: 2 V ~ 6 V Count Rate: 35 MHz Number of Bits per Element: 4 |
на замовлення 67560 шт: термін постачання 21-31 дні (днів) |
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SN74LS298N | onsemi |
Description: IC MULTIPLEXER 4 X 2:1 16-PDIPPackaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Circuit: 4 x 2:1 Type: Multiplexer Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.75V ~ 5.25V Independent Circuits: 1 Current - Output High, Low: 400µA, 8mA Voltage Supply Source: Single Supply Supplier Device Package: 16-PDIP |
на замовлення 4439 шт: термін постачання 21-31 дні (днів) |
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HUFA75344P3 | onsemi |
Description: MOSFET N-CH 55V 75A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V Power Dissipation (Max): 285W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V |
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NVLJWS022N06CLTAG | onsemi |
Description: T6 60V LL 2X2 WDFNW6Packaging: Cut Tape (CT) Package / Case: 6-PowerWDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V Power Dissipation (Max): 2.4W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 2V @ 77µA Supplier Device Package: 6-WDFNW (2.05x2.05) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 14657 шт: термін постачання 21-31 дні (днів) |
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NVTFS007N08HLTAG | onsemi |
Description: MOSFET N-CHANNEL 80V 71APackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 71A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V Power Dissipation (Max): 3.3W (Ta), 79W (Tc) Vgs(th) (Max) @ Id: 3V @ 270µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 32.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 40 V Qualification: AEC-Q101 |
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В кошику од. на суму грн. | ||||||||||||||
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NVTFS007N08HLTAG | onsemi |
Description: MOSFET N-CHANNEL 80V 71APackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 71A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V Power Dissipation (Max): 3.3W (Ta), 79W (Tc) Vgs(th) (Max) @ Id: 3V @ 270µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 32.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 1490 шт: термін постачання 21-31 дні (днів) |
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NVTFWS007N08HLTAG | onsemi |
Description: 80V T8 IN U8FL HEFET PACKPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 71A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V Power Dissipation (Max): 3.3W (Ta), 79W (Tc) Vgs(th) (Max) @ Id: 3V @ 270µA Supplier Device Package: 8-WDFNW (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 32.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 4500 шт: термін постачання 21-31 дні (днів) |
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NVTFWS007N08HLTAG | onsemi |
Description: 80V T8 IN U8FL HEFET PACKPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 71A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V Power Dissipation (Max): 3.3W (Ta), 79W (Tc) Vgs(th) (Max) @ Id: 3V @ 270µA Supplier Device Package: 8-WDFNW (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 32.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 5795 шт: термін постачання 21-31 дні (днів) |
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TL064CN | onsemi |
Description: IC OPAMP JFET 4 CIRCUIT 14DIPPackaging: Tube Package / Case: 14-DIP (0.300", 7.62mm) Mounting Type: Through Hole Amplifier Type: J-FET Operating Temperature: 0°C ~ 70°C Current - Supply: 200µA (x4 Channels) Slew Rate: 3.5V/µs Gain Bandwidth Product: 1 MHz Current - Input Bias: 30 pA Voltage - Input Offset: 3 mV Supplier Device Package: 14-PDIP Number of Circuits: 4 Current - Output / Channel: 20 mA Voltage - Supply Span (Min): 10 V Voltage - Supply Span (Max): 30 V |
на замовлення 142284 шт: термін постачання 21-31 дні (днів) |
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FDB039N06 | onsemi |
Description: MOSFET N-CH 60V 120A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 75A, 10V Power Dissipation (Max): 231W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8235 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDB039N06 | onsemi |
Description: MOSFET N-CH 60V 120A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 75A, 10V Power Dissipation (Max): 231W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8235 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NSQA12VAW5T2G | onsemi |
Description: TVS DIODE 9VWM 23VC SC88APackaging: Bulk Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 15pF @ 1MHz Current - Peak Pulse (10/1000µs): 900mA (8/20µs) Voltage - Reverse Standoff (Typ): 9V Supplier Device Package: SC-88A (SC-70-5/SOT-353) Unidirectional Channels: 4 Voltage - Breakdown (Min): 11.4V Voltage - Clamping (Max) @ Ipp: 23V Power - Peak Pulse: 20W Power Line Protection: No |
на замовлення 108269 шт: термін постачання 21-31 дні (днів) |
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NSQA12VAW5T2 | onsemi |
Description: TVS DIODE 9VWM 23VC SC88APackaging: Bulk Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 15pF @ 1MHz Current - Peak Pulse (10/1000µs): 900mA (8/20µs) Voltage - Reverse Standoff (Typ): 9V Supplier Device Package: SC-88A (SC-70-5/SOT-353) Unidirectional Channels: 4 Voltage - Breakdown (Min): 11.4V Voltage - Clamping (Max) @ Ipp: 23V Power - Peak Pulse: 20W Power Line Protection: No |
на замовлення 99000 шт: термін постачання 21-31 дні (днів) |
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2SC4634LS | onsemi |
Description: TRANS NPN 1500V 0.01A TO220FIPackaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 5V @ 100µA, 500µA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200µA, 5V Frequency - Transition: 6MHz Supplier Device Package: TO-220FI(LS) Current - Collector (Ic) (Max): 10 mA Voltage - Collector Emitter Breakdown (Max): 1500 V Power - Max: 2 W |
на замовлення 945 шт: термін постачання 21-31 дні (днів) |
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2SC4636LS | onsemi |
Description: TRANS NPN 1800V 0.01A TO220FIPackaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 5V @ 40µA, 200µA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100µA, 5V Frequency - Transition: 6MHz Supplier Device Package: TO-220FI(LS) Current - Collector (Ic) (Max): 10 mA Voltage - Collector Emitter Breakdown (Max): 1800 V Power - Max: 2 W |
на замовлення 75 шт: термін постачання 21-31 дні (днів) |
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74VCX16245MTD | onsemi |
Description: IC TXRX NON-INVERT 3.6V 48TSSOP Packaging: Tube Package / Case: 48-TFSOP (0.240", 6.10mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Transceiver, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.2V ~ 3.6V Number of Bits per Element: 8 Current - Output High, Low: 24mA, 24mA Supplier Device Package: 48-TSSOP |
на замовлення 143 шт: термін постачання 21-31 дні (днів) |
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1N5227B | onsemi |
Description: DIODE ZENER 3.6V 500MW DO35Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 3.6 V Impedance (Max) (Zzt): 24 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 15 µA @ 1 V |
на замовлення 1316 шт: термін постачання 21-31 дні (днів) |
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FQPF4N90 | onsemi |
Description: MOSFET N-CH 900V 2.5A TO220FPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Rds On (Max) @ Id, Vgs: 3.3Ohm @ 1.25A, 10V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| TIP146G | onsemi |
Description: TRANS PNP DARL 80V 10A SOT-93Packaging: Bulk Package / Case: TO-218-3 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A Current - Collector Cutoff (Max): 2mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V Supplier Device Package: SOT-93 Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 80 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TIP146 | onsemi |
Description: TRANS PNP DARL 80V 10A SOT-93Packaging: Bulk Package / Case: TO-218-3 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A Current - Collector Cutoff (Max): 2mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V Supplier Device Package: SOT-93 Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 80 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SC78117P1 | onsemi |
Description: ANA OP AMP LO POWER Packaging: Bulk |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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FQPF17P06 | onsemi |
Description: MOSFET P-CH 60V 12A TO220FPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 6A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ADP3293JCPZ-RL | onsemi |
Description: IC REG CTRLR INTEL 3OUT 40LFCSPPackaging: Bulk Package / Case: 40-VFQFN Exposed Pad, CSP Voltage - Output: 0.5V ~ 1.6V Mounting Type: Surface Mount Number of Outputs: 3 Voltage - Input: 6V ~ 14.5V Operating Temperature: 0°C ~ 85°C Applications: Controller, Intel Processor Supplier Device Package: 40-LFCSP (6x6) |
на замовлення 78814 шт: термін постачання 21-31 дні (днів) |
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1N5361B | onsemi |
Description: DIODE ZENER 27V 5W AXIALTolerance: ±5% Packaging: Bulk Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 5 Ohms Supplier Device Package: Axial Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 20.6 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1N756A | onsemi |
Description: DIODE ZENER 8.2V 500MW DO35Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 8.2 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 1 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1N756ATR | onsemi |
Description: DIODE ZENER 8.2V 500MW DO35Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 8.2 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 1 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MC74LCX244DT | onsemi |
Description: IC BUFF NON-INVERT 5.5V 20-TSSOPPackaging: Tube Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 5.5V Number of Bits per Element: 4 Current - Output High, Low: 24mA, 24mA Supplier Device Package: 20-TSSOP |
на замовлення 15930 шт: термін постачання 21-31 дні (днів) |
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1N6373RL4 | onsemi |
Description: TVS DIODE 5VWM 9.4V AXIALPackaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 160A Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: Axial Unidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 9.4V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1N6373 | onsemi |
Description: TVS DIODE 5VWM 9.4VC AXIALPackaging: Bulk Package / Case: DO-201AD, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Applications: General Purpose Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: Axial Unidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 9.4V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
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В кошику од. на суму грн. | ||||||||||||||
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NLSX5011BMX1TCG | onsemi |
Description: IC TRANSLTR BIDIRECTIONAL 6ULLGAFeatures: Auto-Direction Sensing, Power-Off Protection Packaging: Bulk Package / Case: 6-XFLGA Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) Data Rate: 100Mbps Supplier Device Package: 6-ULLGA (1.2x1) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 1 Voltage - VCCA: 0.9 V ~ 4.5 V Voltage - VCCB: 0.9 V ~ 4.5 V Number of Circuits: 1 |
на замовлення 4400 шт: термін постачання 21-31 дні (днів) |
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NLSX5011MUTCG | onsemi |
Description: IC TRANSLTR BIDIRECTIONAL 6UDFNFeatures: Auto-Direction Sensing, Power-Off Protection Packaging: Bulk Package / Case: 6-UFDFN Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) Data Rate: 100Mbps Supplier Device Package: 6-UDFN (1.2x1) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 1 Voltage - VCCA: 0.9 V ~ 4.5 V Voltage - VCCB: 0.9 V ~ 4.5 V Number of Circuits: 1 |
на замовлення 153436 шт: термін постачання 21-31 дні (днів) |
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NLSX4373MUTAG | onsemi |
Description: IC TRANSLTR BIDIRECTIONAL 8UDFNFeatures: Auto-Direction Sensing Packaging: Bulk Package / Case: 8-UFDFN Output Type: Open Drain, Tri-State Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Data Rate: 20Mbps Supplier Device Package: 8-UDFN (1.8x1.2) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 1.5 V ~ 5.5 V Voltage - VCCB: 1.5 V ~ 5.5 V Number of Circuits: 1 |
на замовлення 3484038 шт: термін постачання 21-31 дні (днів) |
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NLSX3012DR2G | onsemi |
Description: IC TRANSLTR BIDIRECTIONAL 8SOICFeatures: Auto-Direction Sensing Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Data Rate: 100Mbps Supplier Device Package: 8-SOIC Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 0.9 V ~ 4.5 V Voltage - VCCB: 1.3 V ~ 4.5 V Number of Circuits: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NLSX3012DR2G | onsemi |
Description: IC TRANSLTR BIDIRECTIONAL 8SOICFeatures: Auto-Direction Sensing Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Data Rate: 100Mbps Supplier Device Package: 8-SOIC Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 0.9 V ~ 4.5 V Voltage - VCCB: 1.3 V ~ 4.5 V Number of Circuits: 1 |
на замовлення 16117 шт: термін постачання 21-31 дні (днів) |
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NLSX4014DR2G | onsemi |
Description: IC TRANSLTR BIDIRECTIONAL 14SOICFeatures: Auto-Direction Sensing Packaging: Bulk Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Data Rate: 140Mbps Supplier Device Package: 14-SOIC Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 4 Voltage - VCCA: 0.9 V ~ 4.1 V Voltage - VCCB: 1.3 V ~ 4.5 V Number of Circuits: 1 |
на замовлення 11051 шт: термін постачання 21-31 дні (днів) |
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NLSX5012DMR2G | onsemi |
Description: IC TRANSLTR BIDIRECTIONAL 8MSOPFeatures: Auto-Direction Sensing, Power-Off Protection Packaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) Data Rate: 100Mbps Supplier Device Package: 8-MSOP Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 0.9 V ~ 4.5 V Voltage - VCCB: 0.9 V ~ 4.5 V Number of Circuits: 1 |
на замовлення 1167 шт: термін постачання 21-31 дні (днів) |
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NLSX5012DR2G | onsemi |
Description: IC TRANSLTR BIDIRECTIONAL 8SOICFeatures: Auto-Direction Sensing, Power-Off Protection Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) Data Rate: 100Mbps Supplier Device Package: 8-SOIC Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 0.9 V ~ 4.5 V Voltage - VCCB: 0.9 V ~ 4.5 V Number of Circuits: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NLSX5012DR2G | onsemi |
Description: IC TRANSLTR BIDIRECTIONAL 8SOICFeatures: Auto-Direction Sensing, Power-Off Protection Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) Data Rate: 100Mbps Supplier Device Package: 8-SOIC Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 0.9 V ~ 4.5 V Voltage - VCCB: 0.9 V ~ 4.5 V Number of Circuits: 1 |
на замовлення 2433 шт: термін постачання 21-31 дні (днів) |
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NLSX3373MUTAG | onsemi |
Description: IC TRANSLTR BIDIRECTIONAL 8UDFNFeatures: Auto-Direction Sensing Packaging: Bulk Package / Case: 8-UFDFN Output Type: Open Drain Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Data Rate: 8Mbps Supplier Device Package: 8-UDFN (1.8x1.2) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 1.2 V ~ 4.1 V Voltage - VCCB: 1.65 V ~ 4.5 V Number of Circuits: 1 |
на замовлення 254925 шт: термін постачання 21-31 дні (днів) |
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NLSX5004MUTAG | onsemi |
Description: IC TRANSLTR BIDIRECTIONAL 12UQFN Packaging: Tape & Reel (TR) Package / Case: 12-UFQFN Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Data Rate: 140Mbps Supplier Device Package: 12-UQFN (1.7x2) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 4 Voltage - VCCA: 0.9 V ~ 3.6 V Voltage - VCCB: 0.9 V ~ 3.6 V Number of Circuits: 1 |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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NLSX4402FMUTAG | onsemi |
Description: 2-BIT 20 MB/S DUAL-SUPPLY LEVELPackaging: Bulk Package / Case: 8-UFDFN Output Type: Open Drain, Tri-State Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Data Rate: 20Mbps Supplier Device Package: 8-UDFN (1.45x1) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 1.5 V ~ 5.5 V Voltage - VCCB: 1.5 V ~ 5.5 V Number of Circuits: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| AR0136AT3B00XUEA0-TL-TPBR | onsemi |
Description: MODULE Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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1N4151 | onsemi |
Description: DIODE STANDARD 75V 150MA DO35Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 150mA Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA Current - Reverse Leakage @ Vr: 50 nA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MC74HC540ADTR2G-Q | onsemi |
Description: IC BUFFER INVERTING 6V 20-TSSOPPackaging: Tape & Reel (TR) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Number of Bits per Element: 8 Current - Output High, Low: 7.8mA, 7.8mA Supplier Device Package: 20-TSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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P6KE68ARL | onsemi |
Description: TVS DIODE 58.1VWM 92VC AXIALPackaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 6.5A (8/20µs) Voltage - Reverse Standoff (Typ): 58.1V Supplier Device Package: Axial Unidirectional Channels: 1 Voltage - Breakdown (Min): 64.6V Voltage - Clamping (Max) @ Ipp: 92V Power - Peak Pulse: 600W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MPQ6842 | onsemi |
Description: TRANS NPN/PNP 30V 200MA 14-PDIPPackaging: Bulk Package / Case: 14-DIP (0.300", 7.62mm) Mounting Type: Through Hole Transistor Type: 1 NPN, 1 PNP Complementary Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 500mW Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 150mV @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 1V Frequency - Transition: 350MHz Supplier Device Package: 14-PDIP |
на замовлення 8746 шт: термін постачання 21-31 дні (днів) |
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NC7SZ10P6X-L22347 | onsemi |
Description: IC GATE NAND 1CH 3-INP SC88Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 3 Supplier Device Package: SC-88/SC70-6/SOT-363 Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 2 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FJD3076TM | onsemi |
Description: TRANS NPN 32V 2A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 500mA, 3V Frequency - Transition: 100MHz Supplier Device Package: DPAK Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 1 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NSB4904DW1T2G | onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-363Packaging: Bulk Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased Power - Max: 187mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NTBL032N065M3S | onsemi |
Description: SILICON CARBIDE (SIC) MOSFET ELIPackaging: Bulk Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 4V @ 7.5mA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1396 pF @ 400 V |
на замовлення 1909 шт: термін постачання 21-31 дні (днів) |
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NTH4L032N065M3S | onsemi |
Description: SIC MOS TO247-4L 32MOHM 650V M3SPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V Power Dissipation (Max): 187W (Tc) Vgs(th) (Max) @ Id: 4V @ 7.5mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 400 V |
на замовлення 460 шт: термін постачання 21-31 дні (днів) |
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NVBG032N065M3S | onsemi |
Description: SIC MOS D2PAK-7L 32MOHM 650V M3SPackaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 7.5mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1409 pF @ 400 V Qualification: AEC-Q101 |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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| DM74153N |
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Виробник: onsemi
Description: IC MULTIPLEXER 2 X 4:1 16-PDIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Circuit: 2 x 4:1
Type: Multiplexer
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 16-PDIP
Description: IC MULTIPLEXER 2 X 4:1 16-PDIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Circuit: 2 x 4:1
Type: Multiplexer
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 16-PDIP
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В кошику
од. на суму грн.
| FQAF15N70 |
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Виробник: onsemi
Description: MOSFET N-CH 700V 9.5A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 4.8A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Description: MOSFET N-CH 700V 9.5A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 4.8A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
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од. на суму грн.
| NSR20206NXT5G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 20V 2A 2DSN
Packaging: Bulk
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Schottky
Capacitance @ Vr, F: 140pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: 2-DSN (1.6x0.8)
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 20 V
Description: DIODE SCHOTTKY 20V 2A 2DSN
Packaging: Bulk
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Schottky
Capacitance @ Vr, F: 140pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: 2-DSN (1.6x0.8)
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 20 V
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В кошику
од. на суму грн.
| MMBTA56 |
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Виробник: onsemi
Description: TRANS PNP 80V 0.5A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 350 mW
Description: TRANS PNP 80V 0.5A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 350 mW
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| MJD340T4 |
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Виробник: onsemi
Description: TRANS NPN 300V 0.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 15 W
Description: TRANS NPN 300V 0.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 15 W
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| DM74ALS163BN |
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Виробник: onsemi
Description: IC BINARY COUNTER 4-BIT 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Elements: 1
Logic Type: Binary Counter
Reset: Synchronous
Operating Temperature: 0°C ~ 70°C
Direction: Up
Trigger Type: Positive Edge
Timing: Synchronous
Supplier Device Package: 16-PDIP
Voltage - Supply: 4.5 V ~ 5.5 V
Count Rate: 40 MHz
Number of Bits per Element: 4
Description: IC BINARY COUNTER 4-BIT 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Elements: 1
Logic Type: Binary Counter
Reset: Synchronous
Operating Temperature: 0°C ~ 70°C
Direction: Up
Trigger Type: Positive Edge
Timing: Synchronous
Supplier Device Package: 16-PDIP
Voltage - Supply: 4.5 V ~ 5.5 V
Count Rate: 40 MHz
Number of Bits per Element: 4
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| DM74ALS163BMX |
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Виробник: onsemi
Description: IC BINARY COUNTER 4-BIT 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Synchronous
Operating Temperature: 0°C ~ 70°C
Direction: Up
Trigger Type: Positive Edge
Timing: Synchronous
Supplier Device Package: 16-SOIC
Voltage - Supply: 4.5 V ~ 5.5 V
Count Rate: 40 MHz
Number of Bits per Element: 4
Description: IC BINARY COUNTER 4-BIT 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Synchronous
Operating Temperature: 0°C ~ 70°C
Direction: Up
Trigger Type: Positive Edge
Timing: Synchronous
Supplier Device Package: 16-SOIC
Voltage - Supply: 4.5 V ~ 5.5 V
Count Rate: 40 MHz
Number of Bits per Element: 4
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| DM74ALS163BM |
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Виробник: onsemi
Description: IC BINARY COUNTER 4-BIT 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Synchronous
Operating Temperature: 0°C ~ 70°C
Direction: Up
Trigger Type: Positive Edge
Timing: Synchronous
Supplier Device Package: 16-SOIC
Voltage - Supply: 4.5 V ~ 5.5 V
Count Rate: 40 MHz
Number of Bits per Element: 4
Description: IC BINARY COUNTER 4-BIT 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Synchronous
Operating Temperature: 0°C ~ 70°C
Direction: Up
Trigger Type: Positive Edge
Timing: Synchronous
Supplier Device Package: 16-SOIC
Voltage - Supply: 4.5 V ~ 5.5 V
Count Rate: 40 MHz
Number of Bits per Element: 4
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| MC74HC163ADTG |
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Виробник: onsemi
Description: IC BINARY COUNTER 4-BIT 16TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Synchronous
Operating Temperature: -55°C ~ 125°C (TA)
Direction: Up
Trigger Type: Positive Edge
Timing: Synchronous
Supplier Device Package: 16-TSSOP
Voltage - Supply: 2 V ~ 6 V
Count Rate: 35 MHz
Number of Bits per Element: 4
Description: IC BINARY COUNTER 4-BIT 16TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Synchronous
Operating Temperature: -55°C ~ 125°C (TA)
Direction: Up
Trigger Type: Positive Edge
Timing: Synchronous
Supplier Device Package: 16-TSSOP
Voltage - Supply: 2 V ~ 6 V
Count Rate: 35 MHz
Number of Bits per Element: 4
на замовлення 67560 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1040+ | 21.71 грн |
| SN74LS298N |
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Виробник: onsemi
Description: IC MULTIPLEXER 4 X 2:1 16-PDIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Independent Circuits: 1
Current - Output High, Low: 400µA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-PDIP
Description: IC MULTIPLEXER 4 X 2:1 16-PDIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Independent Circuits: 1
Current - Output High, Low: 400µA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-PDIP
на замовлення 4439 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 193+ | 116.80 грн |
| HUFA75344P3 |
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Виробник: onsemi
Description: MOSFET N-CH 55V 75A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V
Power Dissipation (Max): 285W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
Description: MOSFET N-CH 55V 75A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V
Power Dissipation (Max): 285W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
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| NVLJWS022N06CLTAG |
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Виробник: onsemi
Description: T6 60V LL 2X2 WDFNW6
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Power Dissipation (Max): 2.4W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 77µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Qualification: AEC-Q101
Description: T6 60V LL 2X2 WDFNW6
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Power Dissipation (Max): 2.4W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 77µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Qualification: AEC-Q101
на замовлення 14657 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 94.53 грн |
| 10+ | 55.27 грн |
| 25+ | 46.05 грн |
| 100+ | 33.40 грн |
| 250+ | 28.57 грн |
| 500+ | 25.60 грн |
| 1000+ | 22.74 грн |
| NVTFS007N08HLTAG |
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Виробник: onsemi
Description: MOSFET N-CHANNEL 80V 71A
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Power Dissipation (Max): 3.3W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 3V @ 270µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 32.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CHANNEL 80V 71A
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Power Dissipation (Max): 3.3W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 3V @ 270µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 32.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 40 V
Qualification: AEC-Q101
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| NVTFS007N08HLTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CHANNEL 80V 71A
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Power Dissipation (Max): 3.3W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 3V @ 270µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 32.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CHANNEL 80V 71A
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Power Dissipation (Max): 3.3W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 3V @ 270µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 32.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 40 V
Qualification: AEC-Q101
на замовлення 1490 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 132.85 грн |
| 10+ | 81.43 грн |
| 100+ | 54.76 грн |
| 500+ | 40.65 грн |
| NVTFWS007N08HLTAG |
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Виробник: onsemi
Description: 80V T8 IN U8FL HEFET PACK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Power Dissipation (Max): 3.3W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 3V @ 270µA
Supplier Device Package: 8-WDFNW (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 32.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 40 V
Qualification: AEC-Q101
Description: 80V T8 IN U8FL HEFET PACK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Power Dissipation (Max): 3.3W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 3V @ 270µA
Supplier Device Package: 8-WDFNW (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 32.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 40 V
Qualification: AEC-Q101
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 37.29 грн |
| 3000+ | 34.93 грн |
| 4500+ | 34.43 грн |
| NVTFWS007N08HLTAG |
![]() |
Виробник: onsemi
Description: 80V T8 IN U8FL HEFET PACK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Power Dissipation (Max): 3.3W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 3V @ 270µA
Supplier Device Package: 8-WDFNW (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 32.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 40 V
Qualification: AEC-Q101
Description: 80V T8 IN U8FL HEFET PACK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Power Dissipation (Max): 3.3W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 3V @ 270µA
Supplier Device Package: 8-WDFNW (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 32.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 40 V
Qualification: AEC-Q101
на замовлення 5795 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 75.79 грн |
| 10+ | 53.06 грн |
| 25+ | 47.89 грн |
| 100+ | 39.64 грн |
| 250+ | 37.11 грн |
| 500+ | 35.58 грн |
| TL064CN |
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Виробник: onsemi
Description: IC OPAMP JFET 4 CIRCUIT 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Amplifier Type: J-FET
Operating Temperature: 0°C ~ 70°C
Current - Supply: 200µA (x4 Channels)
Slew Rate: 3.5V/µs
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 30 pA
Voltage - Input Offset: 3 mV
Supplier Device Package: 14-PDIP
Number of Circuits: 4
Current - Output / Channel: 20 mA
Voltage - Supply Span (Min): 10 V
Voltage - Supply Span (Max): 30 V
Description: IC OPAMP JFET 4 CIRCUIT 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Amplifier Type: J-FET
Operating Temperature: 0°C ~ 70°C
Current - Supply: 200µA (x4 Channels)
Slew Rate: 3.5V/µs
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 30 pA
Voltage - Input Offset: 3 mV
Supplier Device Package: 14-PDIP
Number of Circuits: 4
Current - Output / Channel: 20 mA
Voltage - Supply Span (Min): 10 V
Voltage - Supply Span (Max): 30 V
на замовлення 142284 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 559+ | 39.72 грн |
| FDB039N06 |
Виробник: onsemi
Description: MOSFET N-CH 60V 120A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 75A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8235 pF @ 25 V
Description: MOSFET N-CH 60V 120A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 75A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8235 pF @ 25 V
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| FDB039N06 |
Виробник: onsemi
Description: MOSFET N-CH 60V 120A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 75A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8235 pF @ 25 V
Description: MOSFET N-CH 60V 120A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 75A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8235 pF @ 25 V
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| NSQA12VAW5T2G |
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Виробник: onsemi
Description: TVS DIODE 9VWM 23VC SC88A
Packaging: Bulk
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 900mA (8/20µs)
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 23V
Power - Peak Pulse: 20W
Power Line Protection: No
Description: TVS DIODE 9VWM 23VC SC88A
Packaging: Bulk
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 900mA (8/20µs)
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 23V
Power - Peak Pulse: 20W
Power Line Protection: No
на замовлення 108269 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2273+ | 9.56 грн |
| NSQA12VAW5T2 |
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Виробник: onsemi
Description: TVS DIODE 9VWM 23VC SC88A
Packaging: Bulk
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 900mA (8/20µs)
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 23V
Power - Peak Pulse: 20W
Power Line Protection: No
Description: TVS DIODE 9VWM 23VC SC88A
Packaging: Bulk
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 900mA (8/20µs)
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 23V
Power - Peak Pulse: 20W
Power Line Protection: No
на замовлення 99000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2597+ | 8.83 грн |
| 2SC4634LS |
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Виробник: onsemi
Description: TRANS NPN 1500V 0.01A TO220FI
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 100µA, 500µA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200µA, 5V
Frequency - Transition: 6MHz
Supplier Device Package: TO-220FI(LS)
Current - Collector (Ic) (Max): 10 mA
Voltage - Collector Emitter Breakdown (Max): 1500 V
Power - Max: 2 W
Description: TRANS NPN 1500V 0.01A TO220FI
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 100µA, 500µA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200µA, 5V
Frequency - Transition: 6MHz
Supplier Device Package: TO-220FI(LS)
Current - Collector (Ic) (Max): 10 mA
Voltage - Collector Emitter Breakdown (Max): 1500 V
Power - Max: 2 W
на замовлення 945 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 157+ | 140.49 грн |
| 2SC4636LS |
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Виробник: onsemi
Description: TRANS NPN 1800V 0.01A TO220FI
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 40µA, 200µA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100µA, 5V
Frequency - Transition: 6MHz
Supplier Device Package: TO-220FI(LS)
Current - Collector (Ic) (Max): 10 mA
Voltage - Collector Emitter Breakdown (Max): 1800 V
Power - Max: 2 W
Description: TRANS NPN 1800V 0.01A TO220FI
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 40µA, 200µA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100µA, 5V
Frequency - Transition: 6MHz
Supplier Device Package: TO-220FI(LS)
Current - Collector (Ic) (Max): 10 mA
Voltage - Collector Emitter Breakdown (Max): 1800 V
Power - Max: 2 W
на замовлення 75 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 75+ | 294.21 грн |
| 74VCX16245MTD |
Виробник: onsemi
Description: IC TXRX NON-INVERT 3.6V 48TSSOP
Packaging: Tube
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 48-TSSOP
Description: IC TXRX NON-INVERT 3.6V 48TSSOP
Packaging: Tube
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 48-TSSOP
на замовлення 143 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 190.76 грн |
| 10+ | 165.16 грн |
| 25+ | 155.84 грн |
| 100+ | 124.60 грн |
| 1N5227B |
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Виробник: onsemi
Description: DIODE ZENER 3.6V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
Description: DIODE ZENER 3.6V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
на замовлення 1316 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 45+ | 7.66 грн |
| 98+ | 3.36 грн |
| 211+ | 1.56 грн |
| 500+ | 1.33 грн |
| 1000+ | 1.13 грн |
| FQPF4N90 |
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Виробник: onsemi
Description: MOSFET N-CH 900V 2.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 1.25A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Description: MOSFET N-CH 900V 2.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 1.25A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
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| TIP146G |
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Виробник: onsemi
Description: TRANS PNP DARL 80V 10A SOT-93
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Supplier Device Package: SOT-93
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 80 W
Description: TRANS PNP DARL 80V 10A SOT-93
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Supplier Device Package: SOT-93
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 80 W
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| TIP146 |
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Виробник: onsemi
Description: TRANS PNP DARL 80V 10A SOT-93
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Supplier Device Package: SOT-93
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 80 W
Description: TRANS PNP DARL 80V 10A SOT-93
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Supplier Device Package: SOT-93
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 80 W
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| SC78117P1 |
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 358+ | 62.89 грн |
| FQPF17P06 |
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Виробник: onsemi
Description: MOSFET P-CH 60V 12A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 6A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Description: MOSFET P-CH 60V 12A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 6A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
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од. на суму грн.
| ADP3293JCPZ-RL |
![]() |
Виробник: onsemi
Description: IC REG CTRLR INTEL 3OUT 40LFCSP
Packaging: Bulk
Package / Case: 40-VFQFN Exposed Pad, CSP
Voltage - Output: 0.5V ~ 1.6V
Mounting Type: Surface Mount
Number of Outputs: 3
Voltage - Input: 6V ~ 14.5V
Operating Temperature: 0°C ~ 85°C
Applications: Controller, Intel Processor
Supplier Device Package: 40-LFCSP (6x6)
Description: IC REG CTRLR INTEL 3OUT 40LFCSP
Packaging: Bulk
Package / Case: 40-VFQFN Exposed Pad, CSP
Voltage - Output: 0.5V ~ 1.6V
Mounting Type: Surface Mount
Number of Outputs: 3
Voltage - Input: 6V ~ 14.5V
Operating Temperature: 0°C ~ 85°C
Applications: Controller, Intel Processor
Supplier Device Package: 40-LFCSP (6x6)
на замовлення 78814 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 268+ | 83.86 грн |
| 1N5361B | ![]() |
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Виробник: onsemi
Description: DIODE ZENER 27V 5W AXIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 20.6 V
Description: DIODE ZENER 27V 5W AXIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 20.6 V
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од. на суму грн.
| 1N756A |
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Виробник: onsemi
Description: DIODE ZENER 8.2V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Description: DIODE ZENER 8.2V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
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| 1N756ATR |
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Виробник: onsemi
Description: DIODE ZENER 8.2V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Description: DIODE ZENER 8.2V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
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| MC74LCX244DT |
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Виробник: onsemi
Description: IC BUFF NON-INVERT 5.5V 20-TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-TSSOP
Description: IC BUFF NON-INVERT 5.5V 20-TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-TSSOP
на замовлення 15930 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1397+ | 15.33 грн |
| 1N6373RL4 |
![]() |
Виробник: onsemi
Description: TVS DIODE 5VWM 9.4V AXIAL
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 160A
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 9.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 5VWM 9.4V AXIAL
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 160A
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 9.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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| 1N6373 |
![]() |
Виробник: onsemi
Description: TVS DIODE 5VWM 9.4VC AXIAL
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 9.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 5VWM 9.4VC AXIAL
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 9.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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| NLSX5011BMX1TCG |
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Виробник: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 6ULLGA
Features: Auto-Direction Sensing, Power-Off Protection
Packaging: Bulk
Package / Case: 6-XFLGA
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 6-ULLGA (1.2x1)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 0.9 V ~ 4.5 V
Number of Circuits: 1
Description: IC TRANSLTR BIDIRECTIONAL 6ULLGA
Features: Auto-Direction Sensing, Power-Off Protection
Packaging: Bulk
Package / Case: 6-XFLGA
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 6-ULLGA (1.2x1)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 0.9 V ~ 4.5 V
Number of Circuits: 1
на замовлення 4400 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 728+ | 30.70 грн |
| NLSX5011MUTCG |
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Виробник: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 6UDFN
Features: Auto-Direction Sensing, Power-Off Protection
Packaging: Bulk
Package / Case: 6-UFDFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 6-UDFN (1.2x1)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 0.9 V ~ 4.5 V
Number of Circuits: 1
Description: IC TRANSLTR BIDIRECTIONAL 6UDFN
Features: Auto-Direction Sensing, Power-Off Protection
Packaging: Bulk
Package / Case: 6-UFDFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 6-UDFN (1.2x1)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 0.9 V ~ 4.5 V
Number of Circuits: 1
на замовлення 153436 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 380+ | 59.15 грн |
| NLSX4373MUTAG |
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Виробник: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 8UDFN
Features: Auto-Direction Sensing
Packaging: Bulk
Package / Case: 8-UFDFN
Output Type: Open Drain, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 20Mbps
Supplier Device Package: 8-UDFN (1.8x1.2)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.5 V ~ 5.5 V
Voltage - VCCB: 1.5 V ~ 5.5 V
Number of Circuits: 1
Description: IC TRANSLTR BIDIRECTIONAL 8UDFN
Features: Auto-Direction Sensing
Packaging: Bulk
Package / Case: 8-UFDFN
Output Type: Open Drain, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 20Mbps
Supplier Device Package: 8-UDFN (1.8x1.2)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.5 V ~ 5.5 V
Voltage - VCCB: 1.5 V ~ 5.5 V
Number of Circuits: 1
на замовлення 3484038 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 469+ | 47.92 грн |
| NLSX3012DR2G |
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Виробник: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 8SOIC
Features: Auto-Direction Sensing
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 8-SOIC
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 1.3 V ~ 4.5 V
Number of Circuits: 1
Description: IC TRANSLTR BIDIRECTIONAL 8SOIC
Features: Auto-Direction Sensing
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 8-SOIC
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 1.3 V ~ 4.5 V
Number of Circuits: 1
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| NLSX3012DR2G |
![]() |
Виробник: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 8SOIC
Features: Auto-Direction Sensing
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 8-SOIC
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 1.3 V ~ 4.5 V
Number of Circuits: 1
Description: IC TRANSLTR BIDIRECTIONAL 8SOIC
Features: Auto-Direction Sensing
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 8-SOIC
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 1.3 V ~ 4.5 V
Number of Circuits: 1
на замовлення 16117 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 389+ | 57.65 грн |
| NLSX4014DR2G |
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Виробник: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 14SOIC
Features: Auto-Direction Sensing
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 140Mbps
Supplier Device Package: 14-SOIC
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 0.9 V ~ 4.1 V
Voltage - VCCB: 1.3 V ~ 4.5 V
Number of Circuits: 1
Description: IC TRANSLTR BIDIRECTIONAL 14SOIC
Features: Auto-Direction Sensing
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 140Mbps
Supplier Device Package: 14-SOIC
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 0.9 V ~ 4.1 V
Voltage - VCCB: 1.3 V ~ 4.5 V
Number of Circuits: 1
на замовлення 11051 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 283+ | 79.36 грн |
| NLSX5012DMR2G |
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Виробник: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 8MSOP
Features: Auto-Direction Sensing, Power-Off Protection
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 8-MSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 0.9 V ~ 4.5 V
Number of Circuits: 1
Description: IC TRANSLTR BIDIRECTIONAL 8MSOP
Features: Auto-Direction Sensing, Power-Off Protection
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 8-MSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 0.9 V ~ 4.5 V
Number of Circuits: 1
на замовлення 1167 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 204.38 грн |
| 10+ | 176.97 грн |
| 25+ | 166.96 грн |
| 100+ | 133.48 грн |
| 250+ | 125.33 грн |
| 500+ | 109.67 грн |
| 1000+ | 89.38 грн |
| NLSX5012DR2G |
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Виробник: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 8SOIC
Features: Auto-Direction Sensing, Power-Off Protection
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 8-SOIC
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 0.9 V ~ 4.5 V
Number of Circuits: 1
Description: IC TRANSLTR BIDIRECTIONAL 8SOIC
Features: Auto-Direction Sensing, Power-Off Protection
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 8-SOIC
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 0.9 V ~ 4.5 V
Number of Circuits: 1
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од. на суму грн.
| NLSX5012DR2G |
![]() |
Виробник: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 8SOIC
Features: Auto-Direction Sensing, Power-Off Protection
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 8-SOIC
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 0.9 V ~ 4.5 V
Number of Circuits: 1
Description: IC TRANSLTR BIDIRECTIONAL 8SOIC
Features: Auto-Direction Sensing, Power-Off Protection
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 8-SOIC
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 0.9 V ~ 4.5 V
Number of Circuits: 1
на замовлення 2433 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 246.11 грн |
| 10+ | 151.30 грн |
| 25+ | 128.75 грн |
| 100+ | 96.94 грн |
| 250+ | 85.22 грн |
| 500+ | 78.00 грн |
| 1000+ | 70.78 грн |
| NLSX3373MUTAG |
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Виробник: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 8UDFN
Features: Auto-Direction Sensing
Packaging: Bulk
Package / Case: 8-UFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 8Mbps
Supplier Device Package: 8-UDFN (1.8x1.2)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.2 V ~ 4.1 V
Voltage - VCCB: 1.65 V ~ 4.5 V
Number of Circuits: 1
Description: IC TRANSLTR BIDIRECTIONAL 8UDFN
Features: Auto-Direction Sensing
Packaging: Bulk
Package / Case: 8-UFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 8Mbps
Supplier Device Package: 8-UDFN (1.8x1.2)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.2 V ~ 4.1 V
Voltage - VCCB: 1.65 V ~ 4.5 V
Number of Circuits: 1
на замовлення 254925 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 222+ | 101.08 грн |
| NLSX5004MUTAG |
Виробник: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 12UQFN
Packaging: Tape & Reel (TR)
Package / Case: 12-UFQFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 140Mbps
Supplier Device Package: 12-UQFN (1.7x2)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 0.9 V ~ 3.6 V
Voltage - VCCB: 0.9 V ~ 3.6 V
Number of Circuits: 1
Description: IC TRANSLTR BIDIRECTIONAL 12UQFN
Packaging: Tape & Reel (TR)
Package / Case: 12-UFQFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 140Mbps
Supplier Device Package: 12-UQFN (1.7x2)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 0.9 V ~ 3.6 V
Voltage - VCCB: 0.9 V ~ 3.6 V
Number of Circuits: 1
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 16.50 грн |
| 6000+ | 15.46 грн |
| 9000+ | 15.25 грн |
| 15000+ | 14.09 грн |
| 21000+ | 13.96 грн |
| NLSX4402FMUTAG |
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Виробник: onsemi
Description: 2-BIT 20 MB/S DUAL-SUPPLY LEVEL
Packaging: Bulk
Package / Case: 8-UFDFN
Output Type: Open Drain, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 20Mbps
Supplier Device Package: 8-UDFN (1.45x1)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.5 V ~ 5.5 V
Voltage - VCCB: 1.5 V ~ 5.5 V
Number of Circuits: 1
Description: 2-BIT 20 MB/S DUAL-SUPPLY LEVEL
Packaging: Bulk
Package / Case: 8-UFDFN
Output Type: Open Drain, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 20Mbps
Supplier Device Package: 8-UDFN (1.45x1)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.5 V ~ 5.5 V
Voltage - VCCB: 1.5 V ~ 5.5 V
Number of Circuits: 1
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| 1N4151 |
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Виробник: onsemi
Description: DIODE STANDARD 75V 150MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Description: DIODE STANDARD 75V 150MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
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| MC74HC540ADTR2G-Q |
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Виробник: onsemi
Description: IC BUFFER INVERTING 6V 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-TSSOP
Description: IC BUFFER INVERTING 6V 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-TSSOP
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| P6KE68ARL |
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Виробник: onsemi
Description: TVS DIODE 58.1VWM 92VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 58.1VWM 92VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 600W
Power Line Protection: No
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| MPQ6842 |
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Виробник: onsemi
Description: TRANS NPN/PNP 30V 200MA 14-PDIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Transistor Type: 1 NPN, 1 PNP Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 1V
Frequency - Transition: 350MHz
Supplier Device Package: 14-PDIP
Description: TRANS NPN/PNP 30V 200MA 14-PDIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Transistor Type: 1 NPN, 1 PNP Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 1V
Frequency - Transition: 350MHz
Supplier Device Package: 14-PDIP
на замовлення 8746 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 202+ | 109.59 грн |
| NC7SZ10P6X-L22347 |
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Виробник: onsemi
Description: IC GATE NAND 1CH 3-INP SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: SC-88/SC70-6/SOT-363
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Description: IC GATE NAND 1CH 3-INP SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: SC-88/SC70-6/SOT-363
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
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| FJD3076TM |
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Виробник: onsemi
Description: TRANS NPN 32V 2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 500mA, 3V
Frequency - Transition: 100MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 1 W
Description: TRANS NPN 32V 2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 500mA, 3V
Frequency - Transition: 100MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 1 W
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| NSB4904DW1T2G |
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Виробник: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Bulk
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased
Power - Max: 187mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Bulk
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased
Power - Max: 187mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
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| NTBL032N065M3S |
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Виробник: onsemi
Description: SILICON CARBIDE (SIC) MOSFET ELI
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 7.5mA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1396 pF @ 400 V
Description: SILICON CARBIDE (SIC) MOSFET ELI
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 7.5mA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1396 pF @ 400 V
на замовлення 1909 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 616.56 грн |
| 10+ | 404.78 грн |
| 100+ | 297.88 грн |
| 500+ | 242.48 грн |
| NTH4L032N065M3S |
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Виробник: onsemi
Description: SIC MOS TO247-4L 32MOHM 650V M3S
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 4V @ 7.5mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 400 V
Description: SIC MOS TO247-4L 32MOHM 650V M3S
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 4V @ 7.5mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 400 V
на замовлення 460 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 716.19 грн |
| 30+ | 407.38 грн |
| 120+ | 345.33 грн |
| NVBG032N065M3S |
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Виробник: onsemi
Description: SIC MOS D2PAK-7L 32MOHM 650V M3S
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 7.5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1409 pF @ 400 V
Qualification: AEC-Q101
Description: SIC MOS D2PAK-7L 32MOHM 650V M3S
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 7.5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1409 pF @ 400 V
Qualification: AEC-Q101
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 499.70 грн |





































