| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NCP308MT180TBG | ONSEMI |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; power on reset monitor (PoR); WDFN6 Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: open drain Active logical level: low Supply voltage: 1.6...5.5V DC Case: WDFN6 Operating temperature: -40...125°C Mounting: SMD DC supply current: 6µA Maximum output current: 5mA Threshold on-voltage: 1.67V Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NCP308MT190TBG | ONSEMI |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; power on reset monitor (PoR); WDFN6 Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: open drain Active logical level: low Supply voltage: 1.6...5.5V DC Case: WDFN6 Operating temperature: -40...125°C Mounting: SMD DC supply current: 6µA Maximum output current: 5mA Threshold on-voltage: 1.77V Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NCP308MT250TBG | ONSEMI |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; power on reset monitor (PoR); WDFN6 Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: open drain Active logical level: low Supply voltage: 1.6...5.5V DC Case: WDFN6 Operating temperature: -40...125°C Mounting: SMD DC supply current: 6µA Maximum output current: 5mA Threshold on-voltage: 2.33V Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NCP308MT280TBG | ONSEMI |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; power on reset monitor (PoR); WDFN6 Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: open drain Active logical level: low Supply voltage: 1.6...5.5V DC Case: WDFN6 Operating temperature: -40...125°C Mounting: SMD DC supply current: 6µA Maximum output current: 5mA Threshold on-voltage: 2.61V Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NCP308MT300TBG | ONSEMI |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; power on reset monitor (PoR); WDFN6 Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: open drain Active logical level: low Supply voltage: 1.6...5.5V DC Case: WDFN6 Operating temperature: -40...125°C Mounting: SMD DC supply current: 6µA Maximum output current: 5mA Threshold on-voltage: 2.79V Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NCP308MT330TBG | ONSEMI |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; power on reset monitor (PoR); WDFN6 Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: open drain Active logical level: low Supply voltage: 1.6...5.5V DC Case: WDFN6 Operating temperature: -40...125°C Mounting: SMD DC supply current: 6µA Maximum output current: 5mA Threshold on-voltage: 3.07V Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NCP308MT500TBG | ONSEMI |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; power on reset monitor (PoR); WDFN6 Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: open drain Active logical level: low Supply voltage: 1.6...5.5V DC Case: WDFN6 Operating temperature: -40...125°C Mounting: SMD DC supply current: 6µA Maximum output current: 5mA Threshold on-voltage: 4.65V Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NCP308MTADJTBG | ONSEMI |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; power on reset monitor (PoR); WDFN6 Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: open drain Active logical level: low Supply voltage: 1.6...5.5V DC Case: WDFN6 Operating temperature: -40...125°C Mounting: SMD DC supply current: 6µA Maximum output current: 5mA Threshold on-voltage: 0.405V Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NCP308SN125T1G | ONSEMI |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; power on reset monitor (PoR); TSOP6 Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: open drain Active logical level: low Supply voltage: 1.6...5.5V DC Case: TSOP6 Operating temperature: -40...125°C Mounting: SMD DC supply current: 6µA Maximum output current: 5mA Threshold on-voltage: 1.16V Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NCP308SN190T1G | ONSEMI |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; power on reset monitor (PoR); TSOP6 Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: open drain Active logical level: low Supply voltage: 1.6...5.5V DC Case: TSOP6 Operating temperature: -40...125°C Mounting: SMD DC supply current: 6µA Maximum output current: 5mA Threshold on-voltage: 1.77V Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NCP308SN250T1G | ONSEMI |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; power on reset monitor (PoR); TSOP6 Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: open drain Active logical level: low Supply voltage: 1.6...5.5V DC Case: TSOP6 Operating temperature: -40...125°C Mounting: SMD DC supply current: 6µA Maximum output current: 5mA Threshold on-voltage: 2.33V Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
FDMC4435BZ | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -18A; 31W; MLP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -18A Power dissipation: 31W Case: MLP8 Gate-source voltage: ±25V On-state resistance: 37mΩ Mounting: SMD Gate charge: 53nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
на замовлення 2409 шт: термін постачання 14-30 дні (днів) |
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| NTD6414ANT4G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 117A; 100W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 22A Pulsed drain current: 117A Power dissipation: 100W Case: DPAK Gate-source voltage: ±20V On-state resistance: 30mΩ Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FDMA1023PZ | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -20V; -3.7A; 1.5W; MicroFET Type of transistor: P-MOSFET x2 Technology: PowerTrench® Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.7A Gate charge: 12nC On-state resistance: 0.195Ω Power dissipation: 1.5W Gate-source voltage: ±8V Kind of channel: enhancement Case: MicroFET |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
| NUP1105LT1G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 25.7÷28.4V; 8A; 350W; double,common cathode; ESD Type of diode: TVS array Breakdown voltage: 25.7...28.4V Max. forward impulse current: 8A Peak pulse power dissipation: 0.35kW Semiconductor structure: common cathode; double Version: ESD Mounting: SMD Case: SOT23 Max. off-state voltage: 24V Number of channels: 1 Application: CAN Kind of package: reel; tape Leakage current: 0.1µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SZNUP1105LT1G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 25.7÷28.4V; 8A; 350W; double,common cathode; ESD Type of diode: TVS array Breakdown voltage: 25.7...28.4V Max. forward impulse current: 8A Peak pulse power dissipation: 0.35kW Semiconductor structure: common cathode; double Version: ESD Mounting: SMD Case: SOT23 Max. off-state voltage: 24V Number of channels: 1 Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
FDD2582 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 21A; 95W; DPAK Technology: PowerTrench® Mounting: SMD Polarisation: unipolar Gate charge: 25nC On-state resistance: 172mΩ Drain current: 21A Gate-source voltage: ±20V Power dissipation: 95W Drain-source voltage: 150V Kind of package: reel; tape Case: DPAK Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
| MBR30170MFST3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DFN5; SMD Case: DFN5 Mounting: SMD Type of diode: Schottky rectifying Leakage current: 50µA Max. forward voltage: 0.89V Max. forward impulse current: 540A |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||||
| MBR30170MFST1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DFN5x6; SMD; 170V; 30A; reel,tape Case: DFN5x6 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Type of diode: Schottky rectifying Max. forward voltage: 0.74V Max. forward impulse current: 540A Load current: 30A Max. off-state voltage: 170V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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1N5948BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 3W; 91V; reel,tape; CASE59; single diode; 1N59xxB Manufacturer series: 1N59xxB Mounting: THT Case: CASE59 Type of diode: Zener Power dissipation: 3W Tolerance: ±5% Zener voltage: 91V Kind of package: reel; tape Semiconductor structure: single diode |
на замовлення 4851 шт: термін постачання 14-30 дні (днів) |
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| NCV8518CPDR2G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.25A; SO8; SMD; Ch: 1 Type of integrated circuit: voltage regulator Number of channels: 1 Mounting: SMD Case: SO8 Kind of package: reel; tape Application: automotive industry Output current: 0.25A Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NCV8518CPWR2G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.25A; SO16-W; SMD Type of integrated circuit: voltage regulator Number of channels: 1 Mounting: SMD Case: SO16-W Kind of package: reel; tape Application: automotive industry Output current: 0.25A Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FDP150N10 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 228A; 110W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 57A Pulsed drain current: 228A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: THT Gate charge: 53nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FDP150N10A-F102 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 200A; 91W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 50A Pulsed drain current: 200A Power dissipation: 91W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: THT Gate charge: 16.2nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
DF02M | ONSEMI |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1.5A; Ifsm: 50A Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 1.5A Max. forward impulse current: 50A Case: MDIP4L Kind of package: tube Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated Electrical mounting: THT |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||
| NCV8152MX180280TCG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 0.15A; XDFN6; SMD; Ch: 2 Application: automotive industry Kind of package: reel; tape Case: XDFN6 Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Type of integrated circuit: voltage regulator Output current: 0.15A Number of channels: 2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NCV8154MW180280TBG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; DFN10; SMD; reel,tape Mounting: SMD Case: DFN10 Number of channels: 2 Application: automotive industry Kind of package: reel; tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MBR140ESFT1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 40V Load current: 1A Max. forward voltage: 0.56V Max. forward impulse current: 30A Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MBR140SFT3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 40V Load current: 1A Max. forward voltage: 0.55V Leakage current: 0.5mA Max. forward impulse current: 30A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FAN3225TMX | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; -5÷5A Mounting: SMD Operating temperature: -40...125°C Kind of integrated circuit: low-side; MOSFET gate driver Kind of package: reel; tape Output current: -5...5A Pulse fall time: 9ns Impulse rise time: 12ns Number of channels: 2 Supply voltage: 4.5...18V DC Case: SO8 Type of integrated circuit: driver Technology: MillerDrive™ Kind of output: inverting; non-inverting |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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ES3D | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 3A Reverse recovery time: 30ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SMC Max. forward voltage: 0.95V Max. forward impulse current: 100A Kind of package: reel; tape Power dissipation: 1.66W Capacitance: 45pF |
на замовлення 492 шт: термін постачання 14-30 дні (днів) |
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BAS16LT3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 0.5A Leakage current: 50µA Power dissipation: 0.3W Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||
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SBAS16LT3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 0.5A Leakage current: 30µA Power dissipation: 0.3W Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||
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1SMB5914BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 3.6V; SMD; SMB; reel,tape; single diode; 1SMB59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 3.6V Mounting: SMD Tolerance: ±5% Case: SMB Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: 1SMB59xxB |
на замовлення 325 шт: термін постачання 14-30 дні (днів) |
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LM358AN | ONSEMI |
Category: THT operational amplifiersDescription: IC: operational amplifier; 1.1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; DIP8 Type of integrated circuit: operational amplifier Bandwidth: 1.1MHz Number of channels: dual; 2 Mounting: THT Voltage supply range: ± 1.5...16V DC; 3...32V DC Case: DIP8 Operating temperature: 0...70°C Slew rate: 0.6V/μs |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||||
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FCPF380N65FL1-F154 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 10.2A; Idm: 30.6A; 33W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.2A Pulsed drain current: 30.6A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MBT3946DW1T1G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.2A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.15W Case: SC70-6; SC88; SOT363 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 250...300MHz |
на замовлення 962 шт: термін постачання 14-30 дні (днів) |
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MBT3946DW1T2G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.2A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.15W Case: SC70-6; SC88; SOT363 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 250...300MHz |
на замовлення 4627 шт: термін постачання 14-30 дні (днів) |
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| SMBT3946DW1T1G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.2A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.15W Case: SC70-6; SC88; SOT363 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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TIL113M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 30V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: Darlington Insulation voltage: 4.17kV Collector-emitter voltage: 30V Case: DIP6 Max. off-state voltage: 3V CTR@If: 300%@10mA Turn-on time: 5µs Turn-off time: 0.1ms |
на замовлення 968 шт: термін постачання 14-30 дні (днів) |
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SZMMSZ5250BT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 20V; SMD; SOD123; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 20V Mounting: SMD Tolerance: ±5% Case: SOD123 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MMSZ52xxB Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMSZ5250B | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 20V; SMD; SOD123; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 20V Mounting: SMD Tolerance: ±5% Case: SOD123 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||||||||||||
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30A02CH-TL-E | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 30V; 0.7A; 0.7W; CPH3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.7A Power dissipation: 0.7W Case: CPH3 Current gain: 200...500 Mounting: SMD Kind of package: reel; tape Frequency: 520MHz |
на замовлення 1157 шт: термін постачання 14-30 дні (днів) |
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SZBZX84C15LT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 15V; SMD; SOT23; reel,tape; single diode; BZX84C Type of diode: Zener Power dissipation: 0.3W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: BZX84C Application: automotive industry |
на замовлення 4400 шт: термін постачання 14-30 дні (днів) |
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| BZX84C15LT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 15V; SMD; SOT23; reel,tape; single diode; BZX84C Type of diode: Zener Power dissipation: 0.3W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: BZX84C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SZBZX84C15ET1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 15V; SMD; SOT23; reel,tape; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 15V Mounting: SMD Tolerance: ±6% Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: BZX84CxxET1G Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NLU2G17AMX1TCG | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; ULLGA6; 40uA Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 2 Technology: CMOS Mounting: SMD Case: ULLGA6 Kind of package: reel; tape Supply voltage: 1.65...5.5V DC Kind of input: with Schmitt trigger Operating temperature: -55...125°C Quiescent current: 40µA |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | |||||||||||||||||
| NLX2G17AMX1TCG | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; ULLGA6 Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 2 Technology: CMOS Mounting: SMD Case: ULLGA6 Kind of package: reel; tape Supply voltage: 1.65...5.5V DC Kind of input: with Schmitt trigger |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | |||||||||||||||||
| FDMC3612 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 16A; 35W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 16A Power dissipation: 35W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 212mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FDMC3612-L701 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 12A; Idm: 15A; 35W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 12A Pulsed drain current: 15A Power dissipation: 35W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 212mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
SS29 | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 90V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 90V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 50A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
SS29FA | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123F; SMD; 90V; 2A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 90V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.85V Max. forward impulse current: 50A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| ES3C | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 150V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 150V Load current: 3A Reverse recovery time: 30ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 45pF Case: SMC Max. forward voltage: 0.95V Max. forward impulse current: 100A Leakage current: 0.5mA Power dissipation: 1.66W Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
FDMC86139P | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -15A; 40W; WDFN8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -15A Power dissipation: 40W Case: WDFN8 Gate-source voltage: ±25V On-state resistance: 0.104Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 775 шт: термін постачання 14-30 дні (днів) |
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FDMC7692 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 16A; Idm: 40A; 29W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 16A Power dissipation: 29W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 40A |
на замовлення 2935 шт: термін постачання 14-30 дні (днів) |
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FDMC510P | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -18A; 41W; MLP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -18A Power dissipation: 41W Case: MLP8 Gate-source voltage: ±8V On-state resistance: 17mΩ Mounting: SMD Gate charge: 116nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
FDMC8651 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 20A; 41W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 20A Power dissipation: 41W Case: PQFN8 On-state resistance: 9.3mΩ Mounting: SMD Gate charge: 27.2nC Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±12V Technology: PowerTrench® |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
FDMC8462 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 20A; 41W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 20A Power dissipation: 41W Case: PQFN8 On-state resistance: 9.3mΩ Mounting: SMD Gate charge: 43nC Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V Technology: PowerTrench® |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
| FDMC8878 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 16.5A; 31W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 16.5A Power dissipation: 31W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FDMC0310AS-F127 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 100A; 36W; MLP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 21A Power dissipation: 36W Case: MLP8 Gate-source voltage: ±20V On-state resistance: 5.8mΩ Mounting: SMD Gate charge: 52nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 100A Technology: PowerTrench® |
товару немає в наявності |
В кошику од. на суму грн. |
| NCP308MT180TBG |
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Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 1.67V
Number of channels: 1
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 1.67V
Number of channels: 1
товару немає в наявності
В кошику
од. на суму грн.
| NCP308MT190TBG |
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Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 1.77V
Number of channels: 1
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 1.77V
Number of channels: 1
товару немає в наявності
В кошику
од. на суму грн.
| NCP308MT250TBG |
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Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 2.33V
Number of channels: 1
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 2.33V
Number of channels: 1
товару немає в наявності
В кошику
од. на суму грн.
| NCP308MT280TBG |
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Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 2.61V
Number of channels: 1
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 2.61V
Number of channels: 1
товару немає в наявності
В кошику
од. на суму грн.
| NCP308MT300TBG |
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Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 2.79V
Number of channels: 1
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 2.79V
Number of channels: 1
товару немає в наявності
В кошику
од. на суму грн.
| NCP308MT330TBG |
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Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 3.07V
Number of channels: 1
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 3.07V
Number of channels: 1
товару немає в наявності
В кошику
од. на суму грн.
| NCP308MT500TBG |
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Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 4.65V
Number of channels: 1
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 4.65V
Number of channels: 1
товару немає в наявності
В кошику
од. на суму грн.
| NCP308MTADJTBG |
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Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 0.405V
Number of channels: 1
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 0.405V
Number of channels: 1
товару немає в наявності
В кошику
од. на суму грн.
| NCP308SN125T1G |
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Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); TSOP6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: TSOP6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 1.16V
Number of channels: 1
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); TSOP6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: TSOP6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 1.16V
Number of channels: 1
товару немає в наявності
В кошику
од. на суму грн.
| NCP308SN190T1G |
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Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); TSOP6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: TSOP6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 1.77V
Number of channels: 1
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); TSOP6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: TSOP6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 1.77V
Number of channels: 1
товару немає в наявності
В кошику
од. на суму грн.
| NCP308SN250T1G |
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Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); TSOP6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: TSOP6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 2.33V
Number of channels: 1
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); TSOP6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: TSOP6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 2.33V
Number of channels: 1
товару немає в наявності
В кошику
од. на суму грн.
| FDMC4435BZ |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -18A; 31W; MLP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -18A
Power dissipation: 31W
Case: MLP8
Gate-source voltage: ±25V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -18A; 31W; MLP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -18A
Power dissipation: 31W
Case: MLP8
Gate-source voltage: ±25V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
на замовлення 2409 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 102.00 грн |
| 6+ | 80.22 грн |
| 10+ | 70.50 грн |
| 50+ | 48.92 грн |
| 100+ | 41.84 грн |
| 500+ | 37.97 грн |
| NTD6414ANT4G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 117A; 100W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Pulsed drain current: 117A
Power dissipation: 100W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 117A; 100W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Pulsed drain current: 117A
Power dissipation: 100W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| FDMA1023PZ |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.7A; 1.5W; MicroFET
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.7A
Gate charge: 12nC
On-state resistance: 0.195Ω
Power dissipation: 1.5W
Gate-source voltage: ±8V
Kind of channel: enhancement
Case: MicroFET
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.7A; 1.5W; MicroFET
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.7A
Gate charge: 12nC
On-state resistance: 0.195Ω
Power dissipation: 1.5W
Gate-source voltage: ±8V
Kind of channel: enhancement
Case: MicroFET
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NUP1105LT1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 25.7÷28.4V; 8A; 350W; double,common cathode; ESD
Type of diode: TVS array
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 8A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: common cathode; double
Version: ESD
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 1
Application: CAN
Kind of package: reel; tape
Leakage current: 0.1µA
Category: Protection diodes - arrays
Description: Diode: TVS array; 25.7÷28.4V; 8A; 350W; double,common cathode; ESD
Type of diode: TVS array
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 8A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: common cathode; double
Version: ESD
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 1
Application: CAN
Kind of package: reel; tape
Leakage current: 0.1µA
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| SZNUP1105LT1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 25.7÷28.4V; 8A; 350W; double,common cathode; ESD
Type of diode: TVS array
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 8A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: common cathode; double
Version: ESD
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 1
Application: automotive industry
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 25.7÷28.4V; 8A; 350W; double,common cathode; ESD
Type of diode: TVS array
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 8A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: common cathode; double
Version: ESD
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 1
Application: automotive industry
Kind of package: reel; tape
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| FDD2582 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 95W; DPAK
Technology: PowerTrench®
Mounting: SMD
Polarisation: unipolar
Gate charge: 25nC
On-state resistance: 172mΩ
Drain current: 21A
Gate-source voltage: ±20V
Power dissipation: 95W
Drain-source voltage: 150V
Kind of package: reel; tape
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 95W; DPAK
Technology: PowerTrench®
Mounting: SMD
Polarisation: unipolar
Gate charge: 25nC
On-state resistance: 172mΩ
Drain current: 21A
Gate-source voltage: ±20V
Power dissipation: 95W
Drain-source voltage: 150V
Kind of package: reel; tape
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
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Мінімальне замовлення: 2500 шт
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| MBR30170MFST3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD
Case: DFN5
Mounting: SMD
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward voltage: 0.89V
Max. forward impulse current: 540A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD
Case: DFN5
Mounting: SMD
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward voltage: 0.89V
Max. forward impulse current: 540A
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Мінімальне замовлення: 5000 шт
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| MBR30170MFST1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 170V; 30A; reel,tape
Case: DFN5x6
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward voltage: 0.74V
Max. forward impulse current: 540A
Load current: 30A
Max. off-state voltage: 170V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 170V; 30A; reel,tape
Case: DFN5x6
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward voltage: 0.74V
Max. forward impulse current: 540A
Load current: 30A
Max. off-state voltage: 170V
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| 1N5948BRLG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 91V; reel,tape; CASE59; single diode; 1N59xxB
Manufacturer series: 1N59xxB
Mounting: THT
Case: CASE59
Type of diode: Zener
Power dissipation: 3W
Tolerance: ±5%
Zener voltage: 91V
Kind of package: reel; tape
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 3W; 91V; reel,tape; CASE59; single diode; 1N59xxB
Manufacturer series: 1N59xxB
Mounting: THT
Case: CASE59
Type of diode: Zener
Power dissipation: 3W
Tolerance: ±5%
Zener voltage: 91V
Kind of package: reel; tape
Semiconductor structure: single diode
на замовлення 4851 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 22.17 грн |
| 35+ | 12.02 грн |
| 41+ | 10.05 грн |
| 100+ | 8.40 грн |
| 500+ | 6.01 грн |
| 1000+ | 5.77 грн |
| NCV8518CPDR2G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.25A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Application: automotive industry
Output current: 0.25A
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.25A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Application: automotive industry
Output current: 0.25A
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
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| NCV8518CPWR2G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.25A; SO16-W; SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SO16-W
Kind of package: reel; tape
Application: automotive industry
Output current: 0.25A
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.25A; SO16-W; SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SO16-W
Kind of package: reel; tape
Application: automotive industry
Output current: 0.25A
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
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| FDP150N10 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 228A; 110W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Pulsed drain current: 228A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 228A; 110W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Pulsed drain current: 228A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhancement
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| FDP150N10A-F102 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 200A; 91W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 91W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 16.2nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 200A; 91W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 91W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 16.2nC
Kind of package: tube
Kind of channel: enhancement
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| DF02M |
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Виробник: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1.5A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 1.5A
Max. forward impulse current: 50A
Case: MDIP4L
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Electrical mounting: THT
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1.5A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 1.5A
Max. forward impulse current: 50A
Case: MDIP4L
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Electrical mounting: THT
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Мінімальне замовлення: 3 шт
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| NCV8152MX180280TCG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.15A; XDFN6; SMD; Ch: 2
Application: automotive industry
Kind of package: reel; tape
Case: XDFN6
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.15A
Number of channels: 2
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.15A; XDFN6; SMD; Ch: 2
Application: automotive industry
Kind of package: reel; tape
Case: XDFN6
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.15A
Number of channels: 2
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| NCV8154MW180280TBG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; DFN10; SMD; reel,tape
Mounting: SMD
Case: DFN10
Number of channels: 2
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; DFN10; SMD; reel,tape
Mounting: SMD
Case: DFN10
Number of channels: 2
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
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| MBR140ESFT1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Max. forward voltage: 0.56V
Max. forward impulse current: 30A
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Max. forward voltage: 0.56V
Max. forward impulse current: 30A
Semiconductor structure: single diode
Kind of package: reel; tape
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| MBR140SFT3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Max. forward voltage: 0.55V
Leakage current: 0.5mA
Max. forward impulse current: 30A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Max. forward voltage: 0.55V
Leakage current: 0.5mA
Max. forward impulse current: 30A
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| FAN3225TMX |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; -5÷5A
Mounting: SMD
Operating temperature: -40...125°C
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of package: reel; tape
Output current: -5...5A
Pulse fall time: 9ns
Impulse rise time: 12ns
Number of channels: 2
Supply voltage: 4.5...18V DC
Case: SO8
Type of integrated circuit: driver
Technology: MillerDrive™
Kind of output: inverting; non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; -5÷5A
Mounting: SMD
Operating temperature: -40...125°C
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of package: reel; tape
Output current: -5...5A
Pulse fall time: 9ns
Impulse rise time: 12ns
Number of channels: 2
Supply voltage: 4.5...18V DC
Case: SO8
Type of integrated circuit: driver
Technology: MillerDrive™
Kind of output: inverting; non-inverting
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| ES3D |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMC
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 1.66W
Capacitance: 45pF
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMC
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 1.66W
Capacitance: 45pF
на замовлення 492 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 49.67 грн |
| 14+ | 29.90 грн |
| 50+ | 21.66 грн |
| 100+ | 19.11 грн |
| 250+ | 16.47 грн |
| BAS16LT3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
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Мінімальне замовлення: 10000 шт
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| SBAS16LT3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 30µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 30µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
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Мінімальне замовлення: 10000 шт
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| 1SMB5914BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 3.6V; SMD; SMB; reel,tape; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 3.6V; SMD; SMB; reel,tape; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
на замовлення 325 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 24.83 грн |
| 24+ | 17.46 грн |
| 30+ | 14.08 грн |
| 38+ | 11.04 грн |
| 51+ | 8.15 грн |
| 100+ | 6.84 грн |
| 200+ | 6.42 грн |
| LM358AN |
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Виробник: ONSEMI
Category: THT operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; DIP8
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Number of channels: dual; 2
Mounting: THT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: DIP8
Operating temperature: 0...70°C
Slew rate: 0.6V/μs
Category: THT operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; DIP8
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Number of channels: dual; 2
Mounting: THT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: DIP8
Operating temperature: 0...70°C
Slew rate: 0.6V/μs
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Мінімальне замовлення: 5 шт
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| FCPF380N65FL1-F154 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.2A; Idm: 30.6A; 33W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.2A; Idm: 30.6A; 33W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
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| MBT3946DW1T1G |
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Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250...300MHz
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250...300MHz
на замовлення 962 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 11.53 грн |
| 55+ | 7.49 грн |
| 82+ | 5.07 грн |
| 100+ | 4.30 грн |
| 500+ | 2.98 грн |
| MBT3946DW1T2G |
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Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250...300MHz
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250...300MHz
на замовлення 4627 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 9.76 грн |
| 79+ | 5.27 грн |
| 103+ | 4.02 грн |
| 153+ | 2.69 грн |
| 500+ | 1.70 грн |
| 3000+ | 1.54 грн |
| SMBT3946DW1T1G |
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Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
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| TIL113M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 4.17kV
Collector-emitter voltage: 30V
Case: DIP6
Max. off-state voltage: 3V
CTR@If: 300%@10mA
Turn-on time: 5µs
Turn-off time: 0.1ms
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 4.17kV
Collector-emitter voltage: 30V
Case: DIP6
Max. off-state voltage: 3V
CTR@If: 300%@10mA
Turn-on time: 5µs
Turn-off time: 0.1ms
на замовлення 968 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 35.48 грн |
| 16+ | 25.94 грн |
| 30+ | 23.31 грн |
| SZMMSZ5250BT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 20V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 20V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
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| MMSZ5250B |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 20V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 20V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
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Мінімальне замовлення: 10 шт
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| 30A02CH-TL-E |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.7A; 0.7W; CPH3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.7A
Power dissipation: 0.7W
Case: CPH3
Current gain: 200...500
Mounting: SMD
Kind of package: reel; tape
Frequency: 520MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.7A; 0.7W; CPH3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.7A
Power dissipation: 0.7W
Case: CPH3
Current gain: 200...500
Mounting: SMD
Kind of package: reel; tape
Frequency: 520MHz
на замовлення 1157 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 23.06 грн |
| 28+ | 14.74 грн |
| 100+ | 9.55 грн |
| SZBZX84C15LT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; SOT23; reel,tape; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; SOT23; reel,tape; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84C
Application: automotive industry
на замовлення 4400 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.10 грн |
| 90+ | 4.61 грн |
| 124+ | 3.33 грн |
| 141+ | 2.93 грн |
| 250+ | 2.54 грн |
| 500+ | 2.28 грн |
| 1000+ | 2.03 грн |
| 3000+ | 1.72 грн |
| BZX84C15LT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; SOT23; reel,tape; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; SOT23; reel,tape; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84C
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| SZBZX84C15ET1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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| NLU2G17AMX1TCG |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; ULLGA6; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: ULLGA6
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Kind of input: with Schmitt trigger
Operating temperature: -55...125°C
Quiescent current: 40µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; ULLGA6; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: ULLGA6
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Kind of input: with Schmitt trigger
Operating temperature: -55...125°C
Quiescent current: 40µA
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Мінімальне замовлення: 3 шт
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| NLX2G17AMX1TCG |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; ULLGA6
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: ULLGA6
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Kind of input: with Schmitt trigger
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; ULLGA6
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: ULLGA6
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Kind of input: with Schmitt trigger
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Мінімальне замовлення: 3 шт
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| FDMC3612 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 35W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16A
Power dissipation: 35W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 212mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 35W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16A
Power dissipation: 35W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 212mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| FDMC3612-L701 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; Idm: 15A; 35W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Pulsed drain current: 15A
Power dissipation: 35W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 212mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; Idm: 15A; 35W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Pulsed drain current: 15A
Power dissipation: 35W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 212mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SS29 |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 90V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 90V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 90V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 90V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
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| SS29FA |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 90V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 90V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 90V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 90V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 50A
Kind of package: reel; tape
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| ES3C |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 3A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 45pF
Case: SMC
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Leakage current: 0.5mA
Power dissipation: 1.66W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 3A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 45pF
Case: SMC
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Leakage current: 0.5mA
Power dissipation: 1.66W
Kind of package: reel; tape
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| FDMC86139P |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 40W; WDFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Power dissipation: 40W
Case: WDFN8
Gate-source voltage: ±25V
On-state resistance: 0.104Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 40W; WDFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Power dissipation: 40W
Case: WDFN8
Gate-source voltage: ±25V
On-state resistance: 0.104Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 775 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 150.78 грн |
| 10+ | 90.59 грн |
| 25+ | 80.71 грн |
| 50+ | 74.12 грн |
| 100+ | 67.53 грн |
| 250+ | 61.77 грн |
| FDMC7692 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; Idm: 40A; 29W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Power dissipation: 29W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 40A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; Idm: 40A; 29W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Power dissipation: 29W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 40A
на замовлення 2935 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 60.31 грн |
| 10+ | 46.04 грн |
| 50+ | 36.65 грн |
| FDMC510P |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -18A; 41W; MLP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -18A
Power dissipation: 41W
Case: MLP8
Gate-source voltage: ±8V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 116nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -18A; 41W; MLP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -18A
Power dissipation: 41W
Case: MLP8
Gate-source voltage: ±8V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 116nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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| FDMC8651 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 41W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 41W
Case: PQFN8
On-state resistance: 9.3mΩ
Mounting: SMD
Gate charge: 27.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±12V
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 41W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 41W
Case: PQFN8
On-state resistance: 9.3mΩ
Mounting: SMD
Gate charge: 27.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±12V
Technology: PowerTrench®
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| FDMC8462 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 20A; 41W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Power dissipation: 41W
Case: PQFN8
On-state resistance: 9.3mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 20A; 41W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Power dissipation: 41W
Case: PQFN8
On-state resistance: 9.3mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: PowerTrench®
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Мінімальне замовлення: 3000 шт
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| FDMC8878 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16.5A; 31W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16.5A
Power dissipation: 31W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16.5A; 31W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16.5A
Power dissipation: 31W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| FDMC0310AS-F127 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 100A; 36W; MLP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 36W
Case: MLP8
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 100A
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 100A; 36W; MLP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 36W
Case: MLP8
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 100A
Technology: PowerTrench®
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