Продукція > ONSEMI > Всі товари виробника ONSEMI (143786) > Сторінка 2386 з 2397

Обрати Сторінку:   [  << Попередня Сторінка ]  1 239 478 717 956 1195 1434 1673 1912 2151 2381 2382 2383 2384 2385 2386 2387 2388 2389 2390 2391 2397  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
30A02CH-TL-E 30A02CH-TL-E ONSEMI 30a02ch-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.7A; 0.7W; CPH3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.7A
Power dissipation: 0.7W
Case: CPH3
Current gain: 200...500
Mounting: SMD
Kind of package: reel; tape
Frequency: 520MHz
на замовлення 1157 шт:
термін постачання 14-30 дні (днів)
20+23.70 грн
28+15.15 грн
100+9.82 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
BZX84C15 ONSEMI BZX84Cxx.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; SOT23; reel,tape; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84C
товару немає в наявності
В кошику  од. на суму  грн.
SZBZX84C15LT1G SZBZX84C15LT1G ONSEMI BZX84B_BZX84C.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; SOT23; reel,tape; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84C
Application: automotive industry
на замовлення 4500 шт:
термін постачання 14-30 дні (днів)
72+6.38 грн
105+4.06 грн
143+2.98 грн
163+2.60 грн
500+1.96 грн
1000+1.77 грн
3000+1.56 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
BZX84C15LT3G ONSEMI BZX84B_BZX84C.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; SOT23; reel,tape; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84C
товару немає в наявності
В кошику  од. на суму  грн.
SZBZX84C15ET1G ONSEMI BZX84CxxET1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
NLU2G17AMX1TCG ONSEMI nlu2g17-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; ULLGA6; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: ULLGA6
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Kind of input: with Schmitt trigger
Operating temperature: -55...125°C
Quiescent current: 40µA
товару немає в наявності
В кошику  од. на суму  грн.
NLX2G17AMX1TCG ONSEMI NLX2G17_Rev2_Oct2012.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; ULLGA6
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: ULLGA6
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Kind of input: with Schmitt trigger
товару немає в наявності
В кошику  од. на суму  грн.
BAS16 BAS16 ONSEMI bas16-f.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
FDMC3612 ONSEMI fdmc3612-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 35W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16A
Power dissipation: 35W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 212mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
FDMC3612-L701 ONSEMI fdmc3612-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; Idm: 15A; 35W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Pulsed drain current: 15A
Power dissipation: 35W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 212mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
SS29 ONSEMI SS29-D.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 90V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 90V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
SS29FA ONSEMI ONSM-S-A0003589201-1.pdf?t.download=true&u=5oefqw ss29fa-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 90V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 90V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 50A
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
ES3C ONSEMI ES3J-D.PDF es3a.pdf es3a.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 3A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMC
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Kind of package: reel; tape
Capacitance: 45pF
Leakage current: 0.5mA
Power dissipation: 1.66W
товару немає в наявності
В кошику  од. на суму  грн.
FDMC86139P FDMC86139P ONSEMI fdmc86139p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 40W; WDFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Power dissipation: 40W
Case: WDFN8
Gate-source voltage: ±25V
On-state resistance: 0.104Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 775 шт:
термін постачання 14-30 дні (днів)
3+154.98 грн
10+93.12 грн
25+82.96 грн
50+76.19 грн
100+69.41 грн
250+63.49 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
FDMC7692 FDMC7692 ONSEMI fdmc7692-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; Idm: 40A; 29W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Power dissipation: 29W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 40A
на замовлення 2935 шт:
термін постачання 14-30 дні (днів)
8+61.99 грн
10+47.32 грн
50+37.67 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
FDMC510P FDMC510P ONSEMI FDMC510P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -18A; 41W; MLP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -18A
Power dissipation: 41W
Case: MLP8
Gate-source voltage: ±8V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 116nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
товару немає в наявності
В кошику  од. на суму  грн.
FDMC8651 FDMC8651 ONSEMI FDMC8651.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 41W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 41W
Case: PQFN8
On-state resistance: 9.3mΩ
Mounting: SMD
Gate charge: 27.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±12V
Technology: PowerTrench®
товару немає в наявності
В кошику  од. на суму  грн.
FDMC8462 FDMC8462 ONSEMI FDMC8462.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 20A; 41W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Power dissipation: 41W
Case: PQFN8
On-state resistance: 9.3mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: PowerTrench®
товару немає в наявності
В кошику  од. на суму  грн.
FDMC8878 ONSEMI FAIR-S-A0002365638-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16.5A; 31W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16.5A
Power dissipation: 31W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
FDMC0310AS-F127 ONSEMI fdmc0310as-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 100A; 36W; MLP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 36W
Case: MLP8
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 100A
Technology: PowerTrench®
товару немає в наявності
В кошику  од. на суму  грн.
FDMC8200 ONSEMI ONSM-S-A0003590809-1.pdf?t.download=true&u=5oefqw Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 18/18A; 1.9/2.2W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 18/18A
Power dissipation: 1.9/2.2W
Case: Power33
Gate-source voltage: ±20/±20V
On-state resistance: 32/13.5mΩ
Mounting: SMD
Gate charge: 10/22nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
FDMC9430L-F085 ONSEMI fdmc9430l_f085-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 12A; 11.4W; Power33
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12A
Power dissipation: 11.4W
Case: Power33
Gate-source voltage: ±12V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
FDMC86262P ONSEMI fdmc86262p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -2A; Idm: -35A; 40W; WDFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -2A
Power dissipation: 40W
Case: WDFN8
Gate-source voltage: ±25V
On-state resistance: 307mΩ
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -35A
товару немає в наявності
В кошику  од. на суму  грн.
FDMC8327L ONSEMI fdmc8327l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 14A; Idm: 60A; 30W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 14A
Power dissipation: 30W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 60A
товару немає в наявності
В кошику  од. на суму  грн.
FDMC8097AC ONSEMI fdmc8097ac-d.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 150/-150V; 2.4/-0.9A; 1.9W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 150/-150V
Drain current: 2.4/-0.9A
Power dissipation: 1.9W
Case: Power33
Gate-source voltage: ±20V; ±25V
On-state resistance: 2171/306mΩ
Mounting: SMD
Gate charge: 4/6.2nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
FDMC86184 ONSEMI fdmc86184-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; Idm: 266A; 54W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 54W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 266A
Technology: PowerTrench®
товару немає в наявності
В кошику  од. на суму  грн.
FDMC86160ET100 ONSEMI fdmc86160et100-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; Idm: 204A; 65W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Power dissipation: 65W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 204A
товару немає в наявності
В кошику  од. на суму  грн.
FDMC86340 ONSEMI fdmc86340-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 48A; Idm: 200A; 54W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 48A
Power dissipation: 54W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 200A
товару немає в наявності
В кошику  од. на суму  грн.
FDMC2610 ONSEMI fdmc2610-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 42W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.5A
Power dissipation: 42W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 397mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
FDMC6679AZ ONSEMI fdmc6679az-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 41W; WDFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -20A
Power dissipation: 41W
Case: WDFN8
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
FDMC6686P ONSEMI fdmc6686p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -56A; Idm: -377A; 40W; Power33
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -56A
Power dissipation: 40W
Case: Power33
Gate-source voltage: ±8V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -377A
товару немає в наявності
В кошику  од. на суму  грн.
FDMC86261P ONSEMI fdmc86261p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -9A; Idm: -20A; 40W; Power33
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -9A
Power dissipation: 40W
Case: Power33
Gate-source voltage: ±25V
On-state resistance: 269mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -20A
товару немає в наявності
В кошику  од. на суму  грн.
FDMC7672 ONSEMI fdmc7672-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 50A; 33W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 33W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 50A
товару немає в наявності
В кошику  од. на суму  грн.
FDMC8360L ONSEMI fdmc8360l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 240A; 54W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Power dissipation: 54W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 2.9mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 240A
товару немає в наявності
В кошику  од. на суму  грн.
FDMC86520L ONSEMI fdmc86520l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 22A; Idm: 60A; 40W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 22A
Power dissipation: 40W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 11.7mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 60A
товару немає в наявності
В кошику  од. на суму  грн.
FDMC7672S ONSEMI fdmc7672s-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 45A; 36W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18A
Power dissipation: 36W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 45A
товару немає в наявності
В кошику  од. на суму  грн.
FDMC8321L ONSEMI fdmc8321l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 49A; Idm: 100A; 40W; Power33
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: Power33
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 61nC
On-state resistance: 4.1mΩ
Power dissipation: 40W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 49A
Pulsed drain current: 100A
товару немає в наявності
В кошику  од. на суму  грн.
FDMC8360LET40 ONSEMI fdmc8360let40-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 658A; 75W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 75W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 658A
товару немає в наявності
В кошику  од. на суму  грн.
FDMC86116LZ ONSEMI fdmc86116lz-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.5A; Idm: 15A; 19W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7.5A
Power dissipation: 19W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 178mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 15A
товару немає в наявності
В кошику  од. на суму  грн.
FDMC007N08LC ONSEMI fdmc007n08lc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 42A; Idm: 330A; 57W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 42A
Pulsed drain current: 330A
Power dissipation: 57W
Case: PQFN8
On-state resistance: 12.2mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
товару немає в наявності
В кошику  од. на суму  грн.
FDMC007N08LCDC ONSEMI fdmc007n08lcdc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 41A; Idm: 339A; 57W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 41A
Pulsed drain current: 339A
Power dissipation: 57W
Case: PQFN8
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
товару немає в наявності
В кошику  од. на суму  грн.
NCP551SN33T1G ONSEMI NCP551.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.15V
Output voltage: 3.3V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP551
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.3...12V
товару немає в наявності
В кошику  од. на суму  грн.
NCP1075BAP065G ONSEMI ncp1076a-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Operating temperature: -40...125°C
Frequency: 59...71kHz
Case: DIP8
Topology: flyback
Type of integrated circuit: PMIC
Mounting: SMD
Output current: 0.4A
Number of channels: 1
Operating voltage: 6.5...20V DC
On-state resistance: 16.8Ω
Kind of integrated circuit: AC/DC switcher; PWM controller
товару немає в наявності
В кошику  од. на суму  грн.
NCP1075BAP130G ONSEMI NCP1076A-D.PDF ncp1076a-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Operating temperature: -40...125°C
Frequency: 117...143kHz
Case: DIP8
Topology: flyback
Type of integrated circuit: PMIC
Mounting: SMD
Output current: 0.45A
Number of channels: 1
Operating voltage: 6.5...20V DC
On-state resistance: 16.8Ω
Kind of integrated circuit: AC/DC switcher; PWM controller
товару немає в наявності
В кошику  од. на суму  грн.
NCP4306AAAZZZADR2G NCP4306AAAZZZADR2G ONSEMI ncp4306-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 3.5÷37VDC
Type of integrated circuit: PMIC
Output current: 2...7A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.5...37V DC
товару немає в наявності
В кошику  од. на суму  грн.
NCP4306AADZZZADR2G NCP4306AADZZZADR2G ONSEMI ncp4306-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 3.5÷37VDC
Type of integrated circuit: PMIC
Output current: 2...7A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.5...37V DC
товару немає в наявності
В кошику  од. на суму  грн.
NCP4306AAHZZZADR2G NCP4306AAHZZZADR2G ONSEMI ncp4306-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 3.5÷37VDC
Type of integrated circuit: PMIC
Output current: 2...7A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.5...37V DC
товару немає в наявності
В кошику  од. на суму  грн.
FDPF2D3N10C FDPF2D3N10C ONSEMI fdp2d3n10c-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 157A; Idm: 888A; 45W; TO220FP
Mounting: THT
Case: TO220FP
Kind of package: tube
Polarisation: unipolar
Gate charge: 152nC
On-state resistance: 2.3mΩ
Gate-source voltage: ±20V
Power dissipation: 45W
Drain-source voltage: 100V
Drain current: 157A
Pulsed drain current: 888A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: PowerTrench®
на замовлення 51 шт:
термін постачання 14-30 дні (днів)
1+475.87 грн
5+364.00 грн
10+322.52 грн
25+296.28 грн
В кошику  од. на суму  грн.
MC1496BDR2G ONSEMI mc1496-d.pdf Category: RTV - audio integrated circuits
Description: IC: modulator RF; 300MHz; SO14
Type of integrated circuit: modulator RF
Frequency: 300MHz
Mounting: SMD
Case: SO14
Operating temperature: -40...125°C
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
NJW0302G NJW0302G ONSEMI NJW0281_NJW0302.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 15A; 150W; TO3P
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 15A
Power dissipation: 150W
Case: TO3P
Current gain: 75...150
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Application: automotive industry
на замовлення 241 шт:
термін постачання 14-30 дні (днів)
2+221.79 грн
10+166.76 грн
20+144.75 грн
30+133.75 грн
120+129.52 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
NTHL040N65S3F ONSEMI NTHL040N65S3F.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247
Mounting: THT
Gate charge: 158nC
Kind of package: tube
Pulsed drain current: 162.5A
Drain-source voltage: 650V
Kind of channel: enhancement
Polarisation: unipolar
On-state resistance: 40mΩ
Technology: SuperFET®
Drain current: 45A
Gate-source voltage: ±30V
товару немає в наявності
В кошику  од. на суму  грн.
NTMFS6H800NLT1G ONSEMI ntmfs6h800nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 224A; Idm: 900A; 107W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 224A
Pulsed drain current: 900A
Power dissipation: 107W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
NTMFS6H800NT1G ONSEMI ntmfs6h800n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 203A; Idm: 900A; 100W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 203A
Pulsed drain current: 900A
Power dissipation: 100W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: SMD
Gate charge: 85nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
MJE182G MJE182G ONSEMI MJE172G.PDF Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 3A; 12.5W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 3A
Power dissipation: 12.5W
Case: TO225
Current gain: 50...250
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
на замовлення 399 шт:
термін постачання 14-30 дні (днів)
6+80.22 грн
10+48.17 грн
50+37.59 грн
100+33.35 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
NVMFS6H824NLT1G ONSEMI nvmfs6h824nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 110A; Idm: 722A; 58W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 110A
Pulsed drain current: 722A
Power dissipation: 58W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
NVMFS6H824NLWFT1G ONSEMI nvmfs6h824nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 110A; Idm: 722A; 58W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 110A
Pulsed drain current: 722A
Power dissipation: 58W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
NVMFS6H824NT1G ONSEMI nvmfs6h824n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 103A; Idm: 626A; 58W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 103A
Pulsed drain current: 626A
Power dissipation: 58W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
NVMFS6H824NWFT1G ONSEMI nvmfs6h824n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 103A; Idm: 626A; 58W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 103A
Pulsed drain current: 626A
Power dissipation: 58W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
74VHC139M 74VHC139M ONSEMI FAIRS03250-1.pdf?t.download=true&u=5oefqw Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 2; SMD; SO16; VHC; VHC
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Number of inputs: 2
Mounting: SMD
Case: SO16
Family: VHC
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Kind of package: tube
Quiescent current: 40µA
Manufacturer series: VHC
на замовлення 216 шт:
термін постачання 14-30 дні (днів)
9+51.05 грн
11+39.45 грн
48+31.57 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
MC74VHC1G07DFT1GMC74VHC1G07DFT1G
 MC74VHC1G07DFT1G ONSEMI mc74vhc1g07-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC88A; VHC; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SC88A
Manufacturer series: VHC
Operating temperature: -55...125°C
Kind of package: reel; tape
Supply voltage: 2...5.5V DC
Quiescent current: 40µA
Kind of output: open drain
на замовлення 2985 шт:
термін постачання 14-30 дні (днів)
39+11.85 грн
43+10.07 грн
100+9.73 грн
250+9.40 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
30A02CH-TL-E 30a02ch-d.pdf
30A02CH-TL-E
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.7A; 0.7W; CPH3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.7A
Power dissipation: 0.7W
Case: CPH3
Current gain: 200...500
Mounting: SMD
Kind of package: reel; tape
Frequency: 520MHz
на замовлення 1157 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
20+23.70 грн
28+15.15 грн
100+9.82 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
BZX84C15 BZX84Cxx.pdf
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; SOT23; reel,tape; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84C
товару немає в наявності
В кошику  од. на суму  грн.
SZBZX84C15LT1G BZX84B_BZX84C.PDF
SZBZX84C15LT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; SOT23; reel,tape; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84C
Application: automotive industry
на замовлення 4500 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
72+6.38 грн
105+4.06 грн
143+2.98 грн
163+2.60 грн
500+1.96 грн
1000+1.77 грн
3000+1.56 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
BZX84C15LT3G BZX84B_BZX84C.PDF
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; SOT23; reel,tape; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84C
товару немає в наявності
В кошику  од. на суму  грн.
SZBZX84C15ET1G BZX84CxxET1G.PDF
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
NLU2G17AMX1TCG nlu2g17-d.pdf
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; ULLGA6; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: ULLGA6
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Kind of input: with Schmitt trigger
Operating temperature: -55...125°C
Quiescent current: 40µA
товару немає в наявності
В кошику  од. на суму  грн.
NLX2G17AMX1TCG NLX2G17_Rev2_Oct2012.pdf
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; ULLGA6
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: ULLGA6
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Kind of input: with Schmitt trigger
товару немає в наявності
В кошику  од. на суму  грн.
BAS16 bas16-f.pdf
BAS16
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
FDMC3612 fdmc3612-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 35W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16A
Power dissipation: 35W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 212mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
FDMC3612-L701 fdmc3612-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; Idm: 15A; 35W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Pulsed drain current: 15A
Power dissipation: 35W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 212mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
SS29 SS29-D.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 90V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 90V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
SS29FA ONSM-S-A0003589201-1.pdf?t.download=true&u=5oefqw ss29fa-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 90V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 90V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 50A
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
ES3C ES3J-D.PDF es3a.pdf es3a.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 3A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMC
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Kind of package: reel; tape
Capacitance: 45pF
Leakage current: 0.5mA
Power dissipation: 1.66W
товару немає в наявності
В кошику  од. на суму  грн.
FDMC86139P fdmc86139p-d.pdf
FDMC86139P
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 40W; WDFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Power dissipation: 40W
Case: WDFN8
Gate-source voltage: ±25V
On-state resistance: 0.104Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 775 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+154.98 грн
10+93.12 грн
25+82.96 грн
50+76.19 грн
100+69.41 грн
250+63.49 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
FDMC7692 fdmc7692-d.pdf
FDMC7692
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; Idm: 40A; 29W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Power dissipation: 29W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 40A
на замовлення 2935 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
8+61.99 грн
10+47.32 грн
50+37.67 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
FDMC510P FDMC510P.pdf
FDMC510P
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -18A; 41W; MLP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -18A
Power dissipation: 41W
Case: MLP8
Gate-source voltage: ±8V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 116nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
товару немає в наявності
В кошику  од. на суму  грн.
FDMC8651 FDMC8651.pdf
FDMC8651
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 41W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 41W
Case: PQFN8
On-state resistance: 9.3mΩ
Mounting: SMD
Gate charge: 27.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±12V
Technology: PowerTrench®
товару немає в наявності
В кошику  од. на суму  грн.
FDMC8462 FDMC8462.pdf
FDMC8462
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 20A; 41W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Power dissipation: 41W
Case: PQFN8
On-state resistance: 9.3mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: PowerTrench®
товару немає в наявності
В кошику  од. на суму  грн.
FDMC8878 FAIR-S-A0002365638-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16.5A; 31W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16.5A
Power dissipation: 31W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
FDMC0310AS-F127 fdmc0310as-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 100A; 36W; MLP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 36W
Case: MLP8
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 100A
Technology: PowerTrench®
товару немає в наявності
В кошику  од. на суму  грн.
FDMC8200 ONSM-S-A0003590809-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 18/18A; 1.9/2.2W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 18/18A
Power dissipation: 1.9/2.2W
Case: Power33
Gate-source voltage: ±20/±20V
On-state resistance: 32/13.5mΩ
Mounting: SMD
Gate charge: 10/22nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
FDMC9430L-F085 fdmc9430l_f085-d.pdf
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 12A; 11.4W; Power33
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12A
Power dissipation: 11.4W
Case: Power33
Gate-source voltage: ±12V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
FDMC86262P fdmc86262p-d.pdf
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -2A; Idm: -35A; 40W; WDFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -2A
Power dissipation: 40W
Case: WDFN8
Gate-source voltage: ±25V
On-state resistance: 307mΩ
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -35A
товару немає в наявності
В кошику  од. на суму  грн.
FDMC8327L fdmc8327l-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 14A; Idm: 60A; 30W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 14A
Power dissipation: 30W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 60A
товару немає в наявності
В кошику  од. на суму  грн.
FDMC8097AC fdmc8097ac-d.pdf
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 150/-150V; 2.4/-0.9A; 1.9W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 150/-150V
Drain current: 2.4/-0.9A
Power dissipation: 1.9W
Case: Power33
Gate-source voltage: ±20V; ±25V
On-state resistance: 2171/306mΩ
Mounting: SMD
Gate charge: 4/6.2nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
FDMC86184 fdmc86184-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; Idm: 266A; 54W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 54W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 266A
Technology: PowerTrench®
товару немає в наявності
В кошику  од. на суму  грн.
FDMC86160ET100 fdmc86160et100-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; Idm: 204A; 65W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Power dissipation: 65W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 204A
товару немає в наявності
В кошику  од. на суму  грн.
FDMC86340 fdmc86340-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 48A; Idm: 200A; 54W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 48A
Power dissipation: 54W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 200A
товару немає в наявності
В кошику  од. на суму  грн.
FDMC2610 fdmc2610-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 42W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.5A
Power dissipation: 42W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 397mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
FDMC6679AZ fdmc6679az-d.pdf
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 41W; WDFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -20A
Power dissipation: 41W
Case: WDFN8
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
FDMC6686P fdmc6686p-d.pdf
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -56A; Idm: -377A; 40W; Power33
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -56A
Power dissipation: 40W
Case: Power33
Gate-source voltage: ±8V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -377A
товару немає в наявності
В кошику  од. на суму  грн.
FDMC86261P fdmc86261p-d.pdf
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -9A; Idm: -20A; 40W; Power33
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -9A
Power dissipation: 40W
Case: Power33
Gate-source voltage: ±25V
On-state resistance: 269mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -20A
товару немає в наявності
В кошику  од. на суму  грн.
FDMC7672 fdmc7672-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 50A; 33W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 33W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 50A
товару немає в наявності
В кошику  од. на суму  грн.
FDMC8360L fdmc8360l-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 240A; 54W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Power dissipation: 54W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 2.9mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 240A
товару немає в наявності
В кошику  од. на суму  грн.
FDMC86520L fdmc86520l-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 22A; Idm: 60A; 40W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 22A
Power dissipation: 40W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 11.7mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 60A
товару немає в наявності
В кошику  од. на суму  грн.
FDMC7672S fdmc7672s-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 45A; 36W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18A
Power dissipation: 36W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 45A
товару немає в наявності
В кошику  од. на суму  грн.
FDMC8321L fdmc8321l-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 49A; Idm: 100A; 40W; Power33
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: Power33
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 61nC
On-state resistance: 4.1mΩ
Power dissipation: 40W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 49A
Pulsed drain current: 100A
товару немає в наявності
В кошику  од. на суму  грн.
FDMC8360LET40 fdmc8360let40-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 658A; 75W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 75W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 658A
товару немає в наявності
В кошику  од. на суму  грн.
FDMC86116LZ fdmc86116lz-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.5A; Idm: 15A; 19W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7.5A
Power dissipation: 19W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 178mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 15A
товару немає в наявності
В кошику  од. на суму  грн.
FDMC007N08LC fdmc007n08lc-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 42A; Idm: 330A; 57W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 42A
Pulsed drain current: 330A
Power dissipation: 57W
Case: PQFN8
On-state resistance: 12.2mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
товару немає в наявності
В кошику  од. на суму  грн.
FDMC007N08LCDC fdmc007n08lcdc-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 41A; Idm: 339A; 57W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 41A
Pulsed drain current: 339A
Power dissipation: 57W
Case: PQFN8
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
товару немає в наявності
В кошику  од. на суму  грн.
NCP551SN33T1G NCP551.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.15V
Output voltage: 3.3V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP551
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.3...12V
товару немає в наявності
В кошику  од. на суму  грн.
NCP1075BAP065G ncp1076a-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Operating temperature: -40...125°C
Frequency: 59...71kHz
Case: DIP8
Topology: flyback
Type of integrated circuit: PMIC
Mounting: SMD
Output current: 0.4A
Number of channels: 1
Operating voltage: 6.5...20V DC
On-state resistance: 16.8Ω
Kind of integrated circuit: AC/DC switcher; PWM controller
товару немає в наявності
В кошику  од. на суму  грн.
NCP1075BAP130G NCP1076A-D.PDF ncp1076a-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Operating temperature: -40...125°C
Frequency: 117...143kHz
Case: DIP8
Topology: flyback
Type of integrated circuit: PMIC
Mounting: SMD
Output current: 0.45A
Number of channels: 1
Operating voltage: 6.5...20V DC
On-state resistance: 16.8Ω
Kind of integrated circuit: AC/DC switcher; PWM controller
товару немає в наявності
В кошику  од. на суму  грн.
NCP4306AAAZZZADR2G ncp4306-d.pdf
NCP4306AAAZZZADR2G
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 3.5÷37VDC
Type of integrated circuit: PMIC
Output current: 2...7A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.5...37V DC
товару немає в наявності
В кошику  од. на суму  грн.
NCP4306AADZZZADR2G ncp4306-d.pdf
NCP4306AADZZZADR2G
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 3.5÷37VDC
Type of integrated circuit: PMIC
Output current: 2...7A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.5...37V DC
товару немає в наявності
В кошику  од. на суму  грн.
NCP4306AAHZZZADR2G ncp4306-d.pdf
NCP4306AAHZZZADR2G
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 3.5÷37VDC
Type of integrated circuit: PMIC
Output current: 2...7A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.5...37V DC
товару немає в наявності
В кошику  од. на суму  грн.
FDPF2D3N10C fdp2d3n10c-d.pdf
FDPF2D3N10C
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 157A; Idm: 888A; 45W; TO220FP
Mounting: THT
Case: TO220FP
Kind of package: tube
Polarisation: unipolar
Gate charge: 152nC
On-state resistance: 2.3mΩ
Gate-source voltage: ±20V
Power dissipation: 45W
Drain-source voltage: 100V
Drain current: 157A
Pulsed drain current: 888A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: PowerTrench®
на замовлення 51 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+475.87 грн
5+364.00 грн
10+322.52 грн
25+296.28 грн
В кошику  од. на суму  грн.
MC1496BDR2G mc1496-d.pdf
Виробник: ONSEMI
Category: RTV - audio integrated circuits
Description: IC: modulator RF; 300MHz; SO14
Type of integrated circuit: modulator RF
Frequency: 300MHz
Mounting: SMD
Case: SO14
Operating temperature: -40...125°C
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
NJW0302G NJW0281_NJW0302.pdf
NJW0302G
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 15A; 150W; TO3P
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 15A
Power dissipation: 150W
Case: TO3P
Current gain: 75...150
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Application: automotive industry
на замовлення 241 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+221.79 грн
10+166.76 грн
20+144.75 грн
30+133.75 грн
120+129.52 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
NTHL040N65S3F NTHL040N65S3F.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247
Mounting: THT
Gate charge: 158nC
Kind of package: tube
Pulsed drain current: 162.5A
Drain-source voltage: 650V
Kind of channel: enhancement
Polarisation: unipolar
On-state resistance: 40mΩ
Technology: SuperFET®
Drain current: 45A
Gate-source voltage: ±30V
товару немає в наявності
В кошику  од. на суму  грн.
NTMFS6H800NLT1G ntmfs6h800nl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 224A; Idm: 900A; 107W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 224A
Pulsed drain current: 900A
Power dissipation: 107W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
NTMFS6H800NT1G ntmfs6h800n-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 203A; Idm: 900A; 100W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 203A
Pulsed drain current: 900A
Power dissipation: 100W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: SMD
Gate charge: 85nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
MJE182G MJE172G.PDF
MJE182G
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 3A; 12.5W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 3A
Power dissipation: 12.5W
Case: TO225
Current gain: 50...250
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
на замовлення 399 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
6+80.22 грн
10+48.17 грн
50+37.59 грн
100+33.35 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
NVMFS6H824NLT1G nvmfs6h824nl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 110A; Idm: 722A; 58W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 110A
Pulsed drain current: 722A
Power dissipation: 58W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
NVMFS6H824NLWFT1G nvmfs6h824nl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 110A; Idm: 722A; 58W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 110A
Pulsed drain current: 722A
Power dissipation: 58W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
NVMFS6H824NT1G nvmfs6h824n-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 103A; Idm: 626A; 58W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 103A
Pulsed drain current: 626A
Power dissipation: 58W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
NVMFS6H824NWFT1G nvmfs6h824n-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 103A; Idm: 626A; 58W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 103A
Pulsed drain current: 626A
Power dissipation: 58W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
74VHC139M FAIRS03250-1.pdf?t.download=true&u=5oefqw
74VHC139M
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 2; SMD; SO16; VHC; VHC
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Number of inputs: 2
Mounting: SMD
Case: SO16
Family: VHC
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Kind of package: tube
Quiescent current: 40µA
Manufacturer series: VHC
на замовлення 216 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
9+51.05 грн
11+39.45 грн
48+31.57 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
MC74VHC1G07DFT1G mc74vhc1g07-d.pdf
MC74VHC1G07DFT1GMC74VHC1G07DFT1G
MC74VHC1G07DFT1GMC74VHC1G07DFT1G
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC88A; VHC; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SC88A
Manufacturer series: VHC
Operating temperature: -55...125°C
Kind of package: reel; tape
Supply voltage: 2...5.5V DC
Quiescent current: 40µA
Kind of output: open drain
на замовлення 2985 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
39+11.85 грн
43+10.07 грн
100+9.73 грн
250+9.40 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
Обрати Сторінку:   [  << Попередня Сторінка ]  1 239 478 717 956 1195 1434 1673 1912 2151 2381 2382 2383 2384 2385 2386 2387 2388 2389 2390 2391 2397  [ Наступна Сторінка >> ]