Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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MRA4007T3G | ONSEMI |
![]() Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.18V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.18V Max. load current: 30A Kind of package: reel; tape |
на замовлення 4886 шт: термін постачання 21-30 дні (днів) |
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MBRA160T3G | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape Case: SMA Max. off-state voltage: 60V Max. load current: 2.1A Max. forward voltage: 0.475V Load current: 1A Semiconductor structure: single diode Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD |
на замовлення 4886 шт: термін постачання 21-30 дні (днів) |
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MJE15033G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 250V; 8A; 50W; TO220AB Collector-emitter voltage: 250V Current gain: 50 Collector current: 8A Type of transistor: PNP Power dissipation: 50W Polarisation: bipolar Kind of package: tube Case: TO220AB Mounting: THT Frequency: 30MHz |
на замовлення 109 шт: термін постачання 21-30 дні (днів) |
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MBRS360T3G | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.63V Kind of package: reel; tape |
на замовлення 6863 шт: термін постачання 21-30 дні (днів) |
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NTHL110N65S3F | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 19.5A; Idm: 69A; 240W; TO247 Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 650V Drain current: 19.5A Power dissipation: 240W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 58nC Pulsed drain current: 69A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BC848CLT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 7992 шт: термін постачання 21-30 дні (днів) |
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BC848CPDW1T1G | ONSEMI |
![]() Description: Transistor: NPN / PNP; bipolar; complementary pair; 30V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.38W Case: SC70-6; SC88; SOT363 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Kind of transistor: complementary pair |
на замовлення 2880 шт: термін постачання 21-30 дні (днів) |
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BC848CWT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SBC848BLT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.225/0.3W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.225/0.3W Case: SOT23; TO236AB Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
на замовлення 6028 шт: термін постачання 21-30 дні (днів) |
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FDD5N50FTM-WS | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 2.1A; Idm: 14A; 40W; DPAK Type of transistor: N-MOSFET Technology: DMOS; UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.1A Pulsed drain current: 14A Power dissipation: 40W Case: DPAK Gate-source voltage: ±30V On-state resistance: 1.55Ω Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
FQU5N50CTU-WS | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 2.4A; Idm: 16A; 48W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.4A Pulsed drain current: 16A Power dissipation: 48W Case: IPAK Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 24nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FDB15N50 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 300W; D2PAK Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 11A Power dissipation: 300W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.33Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 766 шт: термін постачання 21-30 дні (днів) |
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FQPF5N50CYDTU | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; Idm: 20A; 38W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.9A Pulsed drain current: 20A Power dissipation: 38W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 24nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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LM431SACMFX | ONSEMI |
![]() Description: IC: voltage reference source; 2.5V; ±2%; SOT23F; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±2% Mounting: SMD Case: SOT23F Operating temperature: -40...85°C Kind of package: reel; tape Maximum output current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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LM431SAIMFX | ONSEMI |
![]() Description: IC: voltage reference source; 2.5V; ±2%; SOT23F; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±2% Mounting: SMD Case: SOT23F Operating temperature: -25...85°C Kind of package: reel; tape Maximum output current: 0.1A |
на замовлення 1345 шт: термін постачання 21-30 дні (днів) |
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LM431SCCMFX | ONSEMI |
![]() Description: IC: voltage reference source; 2.495V; ±0.5%; SOT23F; reel,tape Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±0.5% Mounting: SMD Case: SOT23F Operating temperature: -25...85°C Kind of package: reel; tape Maximum output current: 0.1A |
на замовлення 2490 шт: термін постачання 21-30 дні (днів) |
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FDMS86101DC | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 125W; DFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Power dissipation: 125W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
FDMS7650DC | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 200A; 125W; DFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 200A Power dissipation: 125W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 1.55mΩ Mounting: SMD Gate charge: 206nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
CAT25256HU4I-GT3 | ONSEMI |
![]() Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz Case: uDFN8 Mounting: SMD Kind of package: reel; tape Operating voltage: 1.8...5.5V Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 32kx8bit Access time: 40ns Clock frequency: 20MHz Operating temperature: -40...85°C Kind of interface: serial Memory: 256kb EEPROM |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FQD30N06TM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 14.3A; Idm: 90.8A; 44W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 14.3A Pulsed drain current: 90.8A Power dissipation: 44W Case: DPAK Gate-source voltage: ±25V On-state resistance: 45mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
FDP030N06 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 138A; 205W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 138A Power dissipation: 205W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 3.1mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
FDMS030N06B | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 400A; 104W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Pulsed drain current: 400A Power dissipation: 104W Case: Power56 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Gate charge: 75nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MMSZ5226BT1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
на замовлення 1667 шт: термін постачання 21-30 дні (днів) |
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MMSZ5251BT1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 22V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 22V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
на замовлення 2971 шт: термін постачання 21-30 дні (днів) |
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FDMS86163P | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 104W; PQFN8 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -100V Drain current: -50A Power dissipation: 104W Case: PQFN8 Gate-source voltage: ±25V On-state resistance: 36mΩ Mounting: SMD Gate charge: 59nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 3827 шт: термін постачання 21-30 дні (днів) |
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NCP1117ST50T3G | ONSEMI |
![]() ![]() Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.2V Output voltage: 5V Output current: 1A Case: SOT223 Mounting: SMD Manufacturer series: NCP1117 Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 6.5...12V |
на замовлення 231 шт: термін постачання 21-30 дні (днів) |
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FDMS4435BZ | ONSEMI |
![]() ![]() Description: Transistor: P-MOSFET; unipolar; -30V; -18A; Idm: -50A; 39W; Power56 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -18A Pulsed drain current: -50A Power dissipation: 39W Case: Power56 Gate-source voltage: ±25V On-state resistance: 37mΩ Mounting: SMD Gate charge: 47nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2347 шт: термін постачання 21-30 дні (днів) |
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MMSZ5240BT1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 10V; SMD; reel,tape; SOD123; single diode Manufacturer series: MMSZ52xxB Tolerance: ±5% Semiconductor structure: single diode Zener voltage: 10V Power dissipation: 0.5W Kind of package: reel; tape Type of diode: Zener Mounting: SMD Case: SOD123 |
на замовлення 4562 шт: термін постачання 21-30 дні (днів) |
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MMSZ5242BT1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
на замовлення 1862 шт: термін постачання 21-30 дні (днів) |
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MMSZ5246BT1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Zener voltage: 16V Power dissipation: 0.5W Kind of package: reel; tape Type of diode: Zener Manufacturer series: MMSZ52xxB Case: SOD123 |
на замовлення 4974 шт: термін постачання 21-30 дні (днів) |
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MMSZ5248BT1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
на замовлення 4135 шт: термін постачання 21-30 дні (днів) |
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FDMS8460 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 49A; 104W; PQFN8 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 40V Drain current: 49A Power dissipation: 104W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMSZ5234BT1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 6.2V; SMD; reel,tape; SOD123; single diode Mounting: SMD Case: SOD123 Semiconductor structure: single diode Zener voltage: 6.2V Power dissipation: 0.5W Kind of package: reel; tape Type of diode: Zener Manufacturer series: MMSZ52xxB Tolerance: ±5% |
на замовлення 6010 шт: термін постачання 21-30 дні (днів) |
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MMSZ5254BT1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 27V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Case: SOD123 Mounting: SMD Semiconductor structure: single diode Kind of package: reel; tape Power dissipation: 0.5W Tolerance: ±5% Zener voltage: 27V Manufacturer series: MMSZ52xxB |
на замовлення 3002 шт: термін постачання 21-30 дні (днів) |
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FDMS3604S | ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/40A; Idm: 40÷100A Type of transistor: N-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 30/40A Pulsed drain current: 40...100A Power dissipation: 2.2/2.5W Case: PQFN8 Gate-source voltage: ±20/±20V On-state resistance: 10.8/4mΩ Mounting: SMD Gate charge: 29/66nC Kind of package: reel; tape Kind of channel: enhancement Semiconductor structure: asymmetric |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FDMS3664S | ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 30/60A Power dissipation: 2.2/2.5W Case: Power56 Gate-source voltage: ±20/±12V On-state resistance: 11/4.5mΩ Mounting: SMD Gate charge: 29/52nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2985 шт: термін постачання 21-30 дні (днів) |
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NCP1117IDT33T4G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; DPAK; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.2V Output voltage: 3.3V Output current: 1A Case: DPAK Mounting: SMD Manufacturer series: NCP1117 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
NCP1117IDT50T4G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; DPAK; SMD; NCP1117 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.2V Output voltage: 5V Output current: 1A Case: DPAK Mounting: SMD Manufacturer series: NCP1117 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NCP1117IDTAT4G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷18.8V; 1A Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 1.2V Output voltage: 1.25...18.8V Output current: 1A Case: DPAK Mounting: SMD Manufacturer series: NCP1117 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 20V |
на замовлення 790 шт: термін постачання 21-30 дні (днів) |
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NCP1117IST18T3G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.2V Output voltage: 1.8V Output current: 1A Case: SOT223 Mounting: SMD Manufacturer series: NCP1117 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
NCP1117IST50T3G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.2V Output voltage: 5V Output current: 1A Case: SOT223 Mounting: SMD Manufacturer series: NCP1117 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NCP1117ISTAT3G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷18.8V; 1A Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 1.2V Output voltage: 1.25...18.8V Output current: 1A Case: SOT223 Mounting: SMD Manufacturer series: NCP1117 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 20V |
на замовлення 2979 шт: термін постачання 21-30 дні (днів) |
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NCP1117LPST18T3G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.4V Output voltage: 1.8V Output current: 1A Case: SOT223 Mounting: SMD Manufacturer series: NCP1117LP Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 1.25...18V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NCP1117LPST33T3G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.4V Output voltage: 3.3V Output current: 1A Case: SOT223 Mounting: SMD Manufacturer series: NCP1117LP Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 4.75...10V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCP1117LPST50T3G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.4V Output voltage: 5V Output current: 1A Case: SOT223 Mounting: SMD Manufacturer series: NCP1117LP Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 6.5...12V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
NCP1117LPSTADT3G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷15V; 1A; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 1.4V Output voltage: 1.25...15V Output current: 1A Case: SOT223 Mounting: SMD Manufacturer series: NCP1117LP Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 1.25...18V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NCP1117ST12T3G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 12V; 1A; SOT223; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.2V Output voltage: 12V Output current: 1A Case: SOT223 Mounting: SMD Manufacturer series: NCP1117 Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 20V |
на замовлення 2509 шт: термін постачання 21-30 дні (днів) |
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NCP1117ST15T3G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.2V Output voltage: 1.5V Output current: 1A Case: SOT223 Mounting: SMD Manufacturer series: NCP1117 Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NCP1117ST18T3G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.2V Output voltage: 1.8V Output current: 1A Case: SOT223 Mounting: SMD Manufacturer series: NCP1117 Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 20V |
на замовлення 3306 шт: термін постачання 21-30 дні (днів) |
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NCP1117ST25T3G | ONSEMI |
![]() ![]() Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.2V Output voltage: 2.5V Output current: 1A Case: SOT223 Mounting: SMD Manufacturer series: NCP1117 Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 20V |
на замовлення 3159 шт: термін постачання 21-30 дні (днів) |
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NCP1117ST33T3G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.2V Output voltage: 3.3V Output current: 1A Case: SOT223 Mounting: SMD Manufacturer series: NCP1117 Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 4.75...10V |
на замовлення 2998 шт: термін постачання 21-30 дні (днів) |
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NCP1117STAT3G | ONSEMI |
![]() ![]() Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷20V; 1A; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 1.2V Output voltage: 1.25...20V Output current: 1A Case: SOT223 Mounting: SMD Manufacturer series: NCP1117 Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 1.4...20V |
на замовлення 3484 шт: термін постачання 21-30 дні (днів) |
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NCV1117DT33T5G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1.5A; DPAK; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.2V Output voltage: 3.3V Output current: 1.5A Case: DPAK Mounting: SMD Manufacturer series: NCV1117 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Application: automotive industry Input voltage: 1.25...20V |
на замовлення 658 шт: термін постачання 21-30 дні (днів) |
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MC14069UBDG | ONSEMI |
![]() Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Type of integrated circuit: digital Mounting: SMD Operating temperature: -55...125°C Case: SO14 Number of inputs: 1 Supply voltage: 3...18V DC Number of channels: hex; 6 Delay time: 100ns Kind of package: tube Kind of gate: NOT Technology: CMOS Family: HEF4000B |
на замовлення 152 шт: термін постачання 21-30 дні (днів) |
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2N7002WT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.34A; 0.33W; SC70,SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.34A Power dissipation: 0.33W Case: SC70; SOT323 Gate-source voltage: ±20V On-state resistance: 1.19Ω Mounting: SMD Gate charge: 0.7nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 620 шт: термін постачання 21-30 дні (днів) |
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FQT5P10TF | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -0.8A; 2W; SOT223 Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -800mA Power dissipation: 2W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 1.05Ω Mounting: SMD Gate charge: 8.2nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
CAT24C32WI-GT3 | ONSEMI |
![]() Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; SOIC8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 32kb EEPROM Interface: I2C Memory organisation: 4kx8bit Operating voltage: 1.7...5.5V Clock frequency: 1MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FDS6898A | ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 20V; 9.4A; 2W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 2W Case: SO8 Mounting: SMD Kind of package: reel; tape On-state resistance: 21mΩ Gate charge: 23nC Technology: PowerTrench® Kind of channel: enhancement Gate-source voltage: ±12V Drain-source voltage: 20V Drain current: 9.4A |
на замовлення 2287 шт: термін постачання 21-30 дні (днів) |
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FDS8949 | ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 40V; 6A; 2W; SO8 Type of transistor: N-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 40V Drain current: 6A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 43mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1607 шт: термін постачання 21-30 дні (днів) |
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FDS8958B | ONSEMI |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 30/-30V Drain current: 6.4/-4.5A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20/±25V On-state resistance: 39/72mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
MRA4007T3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.18V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.18V
Max. load current: 30A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.18V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.18V
Max. load current: 30A
Kind of package: reel; tape
на замовлення 4886 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
17+ | 25.24 грн |
20+ | 18.90 грн |
24+ | 15.95 грн |
50+ | 10.05 грн |
100+ | 8.24 грн |
199+ | 4.57 грн |
547+ | 4.32 грн |
MBRA160T3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape
Case: SMA
Max. off-state voltage: 60V
Max. load current: 2.1A
Max. forward voltage: 0.475V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape
Case: SMA
Max. off-state voltage: 60V
Max. load current: 2.1A
Max. forward voltage: 0.475V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
на замовлення 4886 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 26.86 грн |
25+ | 15.42 грн |
100+ | 11.79 грн |
108+ | 8.24 грн |
297+ | 7.79 грн |
3000+ | 7.48 грн |
MJE15033G |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 8A; 50W; TO220AB
Collector-emitter voltage: 250V
Current gain: 50
Collector current: 8A
Type of transistor: PNP
Power dissipation: 50W
Polarisation: bipolar
Kind of package: tube
Case: TO220AB
Mounting: THT
Frequency: 30MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 8A; 50W; TO220AB
Collector-emitter voltage: 250V
Current gain: 50
Collector current: 8A
Type of transistor: PNP
Power dissipation: 50W
Polarisation: bipolar
Kind of package: tube
Case: TO220AB
Mounting: THT
Frequency: 30MHz
на замовлення 109 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 104.20 грн |
10+ | 81.64 грн |
12+ | 74.83 грн |
33+ | 70.30 грн |
100+ | 68.03 грн |
MBRS360T3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.63V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.63V
Kind of package: reel; tape
на замовлення 6863 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 27.68 грн |
19+ | 19.96 грн |
25+ | 17.69 грн |
50+ | 16.03 грн |
79+ | 11.34 грн |
215+ | 10.73 грн |
1000+ | 10.58 грн |
2500+ | 10.28 грн |
NTHL110N65S3F |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.5A; Idm: 69A; 240W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.5A
Power dissipation: 240W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 58nC
Pulsed drain current: 69A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.5A; Idm: 69A; 240W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.5A
Power dissipation: 240W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 58nC
Pulsed drain current: 69A
товару немає в наявності
В кошику
од. на суму грн.
BC848CLT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 7992 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
54+ | 7.60 грн |
103+ | 3.70 грн |
138+ | 2.75 грн |
157+ | 2.41 грн |
794+ | 1.12 грн |
2185+ | 1.06 грн |
6000+ | 1.02 грн |
BC848CPDW1T1G |
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Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 30V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Kind of transistor: complementary pair
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 30V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Kind of transistor: complementary pair
на замовлення 2880 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
34+ | 12.21 грн |
57+ | 6.73 грн |
100+ | 4.07 грн |
390+ | 2.29 грн |
500+ | 2.28 грн |
1072+ | 2.16 грн |
BC848CWT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
товару немає в наявності
В кошику
од. на суму грн.
SBC848BLT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
на замовлення 6028 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
46+ | 8.95 грн |
70+ | 5.44 грн |
116+ | 3.27 грн |
500+ | 2.34 грн |
660+ | 1.35 грн |
1816+ | 1.28 грн |
FDD5N50FTM-WS |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.1A; Idm: 14A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.1A
Pulsed drain current: 14A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.55Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.1A; Idm: 14A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.1A
Pulsed drain current: 14A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.55Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
FQU5N50CTU-WS |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.4A; Idm: 16A; 48W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.4A
Pulsed drain current: 16A
Power dissipation: 48W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.4A; Idm: 16A; 48W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.4A
Pulsed drain current: 16A
Power dissipation: 48W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
FDB15N50 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.33Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.33Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 766 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 206.77 грн |
6+ | 169.32 грн |
15+ | 160.25 грн |
250+ | 154.96 грн |
500+ | 154.20 грн |
FQPF5N50CYDTU |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; Idm: 20A; 38W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.9A
Pulsed drain current: 20A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; Idm: 20A; 38W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.9A
Pulsed drain current: 20A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
LM431SACMFX |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±2%; SOT23F; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±2%
Mounting: SMD
Case: SOT23F
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±2%; SOT23F; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±2%
Mounting: SMD
Case: SOT23F
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 0.1A
товару немає в наявності
В кошику
од. на суму грн.
LM431SAIMFX |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±2%; SOT23F; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±2%
Mounting: SMD
Case: SOT23F
Operating temperature: -25...85°C
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±2%; SOT23F; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±2%
Mounting: SMD
Case: SOT23F
Operating temperature: -25...85°C
Kind of package: reel; tape
Maximum output current: 0.1A
на замовлення 1345 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 41.52 грн |
13+ | 29.93 грн |
21+ | 18.67 грн |
92+ | 9.68 грн |
252+ | 9.15 грн |
1000+ | 9.00 грн |
LM431SCCMFX |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.5%; SOT23F; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23F
Operating temperature: -25...85°C
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.5%; SOT23F; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23F
Operating temperature: -25...85°C
Kind of package: reel; tape
Maximum output current: 0.1A
на замовлення 2490 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 27.68 грн |
26+ | 15.04 грн |
31+ | 12.32 грн |
100+ | 9.37 грн |
149+ | 5.90 грн |
411+ | 5.59 грн |
FDMS86101DC |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS7650DC |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 200A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 200A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 206nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 200A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 200A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 206nC
Kind of package: reel; tape
Kind of channel: enhancement
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CAT25256HU4I-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 32kx8bit
Access time: 40ns
Clock frequency: 20MHz
Operating temperature: -40...85°C
Kind of interface: serial
Memory: 256kb EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 32kx8bit
Access time: 40ns
Clock frequency: 20MHz
Operating temperature: -40...85°C
Kind of interface: serial
Memory: 256kb EEPROM
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од. на суму грн.
FQD30N06TM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14.3A; Idm: 90.8A; 44W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14.3A
Pulsed drain current: 90.8A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14.3A; Idm: 90.8A; 44W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14.3A
Pulsed drain current: 90.8A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDP030N06 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 138A; 205W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 138A
Power dissipation: 205W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 138A; 205W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 138A
Power dissipation: 205W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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од. на суму грн.
FDMS030N06B |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 400A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 400A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhancement
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од. на суму грн.
MMSZ5226BT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
на замовлення 1667 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 10.58 грн |
61+ | 6.20 грн |
98+ | 3.87 грн |
120+ | 3.16 грн |
509+ | 1.73 грн |
1000+ | 1.72 грн |
1400+ | 1.64 грн |
1500+ | 1.58 грн |
MMSZ5251BT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 22V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 22V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
на замовлення 2971 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 10.58 грн |
53+ | 7.26 грн |
102+ | 3.73 грн |
473+ | 1.87 грн |
1299+ | 1.77 грн |
FDMS86163P |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 104W; PQFN8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -50A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±25V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 104W; PQFN8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -50A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±25V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 3827 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 208.40 грн |
3+ | 160.25 грн |
8+ | 122.46 грн |
20+ | 116.41 грн |
1000+ | 114.14 грн |
3000+ | 111.87 грн |
NCP1117ST50T3G | ![]() |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.2V
Output voltage: 5V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: NCP1117
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 6.5...12V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.2V
Output voltage: 5V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: NCP1117
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 6.5...12V
на замовлення 231 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 28.49 грн |
50+ | 20.41 грн |
54+ | 16.55 грн |
148+ | 15.72 грн |
FDMS4435BZ |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -18A; Idm: -50A; 39W; Power56
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -18A
Pulsed drain current: -50A
Power dissipation: 39W
Case: Power56
Gate-source voltage: ±25V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -18A; Idm: -50A; 39W; Power56
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -18A
Pulsed drain current: -50A
Power dissipation: 39W
Case: Power56
Gate-source voltage: ±25V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2347 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 118.04 грн |
10+ | 72.87 грн |
19+ | 47.02 грн |
52+ | 44.45 грн |
500+ | 42.78 грн |
MMSZ5240BT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; SMD; reel,tape; SOD123; single diode
Manufacturer series: MMSZ52xxB
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 10V
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Case: SOD123
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; SMD; reel,tape; SOD123; single diode
Manufacturer series: MMSZ52xxB
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 10V
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Case: SOD123
на замовлення 4562 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.35 грн |
84+ | 4.54 грн |
122+ | 3.11 грн |
143+ | 2.65 грн |
479+ | 1.84 грн |
1315+ | 1.75 грн |
1500+ | 1.73 грн |
MMSZ5242BT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
на замовлення 1862 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
42+ | 9.77 грн |
67+ | 5.67 грн |
101+ | 3.76 грн |
121+ | 3.14 грн |
495+ | 1.83 грн |
1000+ | 1.76 грн |
1362+ | 1.73 грн |
1500+ | 1.66 грн |
MMSZ5246BT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 16V
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: MMSZ52xxB
Case: SOD123
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 16V
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: MMSZ52xxB
Case: SOD123
на замовлення 4974 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
55+ | 7.43 грн |
76+ | 4.99 грн |
94+ | 4.02 грн |
103+ | 3.70 грн |
500+ | 2.33 грн |
511+ | 1.74 грн |
1404+ | 1.64 грн |
1500+ | 1.63 грн |
2000+ | 1.58 грн |
MMSZ5248BT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
на замовлення 4135 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.33 грн |
82+ | 4.61 грн |
125+ | 3.04 грн |
148+ | 2.57 грн |
676+ | 1.35 грн |
1860+ | 1.27 грн |
FDMS8460 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 49A; 104W; PQFN8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 49A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 49A; 104W; PQFN8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 49A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
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од. на суму грн.
MMSZ5234BT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Case: SOD123
Semiconductor structure: single diode
Zener voltage: 6.2V
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: MMSZ52xxB
Tolerance: ±5%
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Case: SOD123
Semiconductor structure: single diode
Zener voltage: 6.2V
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: MMSZ52xxB
Tolerance: ±5%
на замовлення 6010 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
42+ | 9.77 грн |
65+ | 5.90 грн |
101+ | 3.75 грн |
123+ | 3.08 грн |
500+ | 1.95 грн |
619+ | 1.46 грн |
1702+ | 1.38 грн |
3000+ | 1.36 грн |
MMSZ5254BT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 27V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Case: SOD123
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 27V
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 27V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Case: SOD123
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 27V
Manufacturer series: MMSZ52xxB
на замовлення 3002 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.33 грн |
84+ | 4.54 грн |
92+ | 4.11 грн |
183+ | 2.07 грн |
492+ | 1.80 грн |
1000+ | 1.75 грн |
1352+ | 1.70 грн |
3000+ | 1.66 грн |
FDMS3604S |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/40A; Idm: 40÷100A
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/40A
Pulsed drain current: 40...100A
Power dissipation: 2.2/2.5W
Case: PQFN8
Gate-source voltage: ±20/±20V
On-state resistance: 10.8/4mΩ
Mounting: SMD
Gate charge: 29/66nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: asymmetric
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/40A; Idm: 40÷100A
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/40A
Pulsed drain current: 40...100A
Power dissipation: 2.2/2.5W
Case: PQFN8
Gate-source voltage: ±20/±20V
On-state resistance: 10.8/4mΩ
Mounting: SMD
Gate charge: 29/66nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: asymmetric
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FDMS3664S |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/60A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±12V
On-state resistance: 11/4.5mΩ
Mounting: SMD
Gate charge: 29/52nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/60A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±12V
On-state resistance: 11/4.5mΩ
Mounting: SMD
Gate charge: 29/52nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2985 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 68.38 грн |
7+ | 60.47 грн |
18+ | 52.16 грн |
47+ | 49.13 грн |
1000+ | 47.62 грн |
NCP1117IDT33T4G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; DPAK; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.2V
Output voltage: 3.3V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: NCP1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 20V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; DPAK; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.2V
Output voltage: 3.3V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: NCP1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 20V
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NCP1117IDT50T4G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; DPAK; SMD; NCP1117
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.2V
Output voltage: 5V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: NCP1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 20V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; DPAK; SMD; NCP1117
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.2V
Output voltage: 5V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: NCP1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 20V
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NCP1117IDTAT4G |
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Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷18.8V; 1A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.2V
Output voltage: 1.25...18.8V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: NCP1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 20V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷18.8V; 1A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.2V
Output voltage: 1.25...18.8V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: NCP1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 20V
на замовлення 790 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 45.59 грн |
11+ | 35.91 грн |
49+ | 18.14 грн |
135+ | 17.16 грн |
NCP1117IST18T3G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.2V
Output voltage: 1.8V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: NCP1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 20V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.2V
Output voltage: 1.8V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: NCP1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 20V
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од. на суму грн.
NCP1117IST50T3G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.2V
Output voltage: 5V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: NCP1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 20V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.2V
Output voltage: 5V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: NCP1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 20V
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NCP1117ISTAT3G |
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Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷18.8V; 1A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.2V
Output voltage: 1.25...18.8V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: NCP1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 20V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷18.8V; 1A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.2V
Output voltage: 1.25...18.8V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: NCP1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 20V
на замовлення 2979 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 43.96 грн |
16+ | 25.17 грн |
50+ | 17.76 грн |
137+ | 16.86 грн |
500+ | 16.71 грн |
1000+ | 16.18 грн |
NCP1117LPST18T3G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.4V
Output voltage: 1.8V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: NCP1117LP
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.25...18V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.4V
Output voltage: 1.8V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: NCP1117LP
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.25...18V
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од. на суму грн.
NCP1117LPST33T3G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.4V
Output voltage: 3.3V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: NCP1117LP
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 4.75...10V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.4V
Output voltage: 3.3V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: NCP1117LP
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 4.75...10V
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NCP1117LPST50T3G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.4V
Output voltage: 5V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: NCP1117LP
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 6.5...12V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.4V
Output voltage: 5V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: NCP1117LP
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 6.5...12V
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NCP1117LPSTADT3G |
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Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷15V; 1A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.4V
Output voltage: 1.25...15V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: NCP1117LP
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.25...18V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷15V; 1A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.4V
Output voltage: 1.25...15V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: NCP1117LP
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.25...18V
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од. на суму грн.
NCP1117ST12T3G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 12V; 1A; SOT223; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.2V
Output voltage: 12V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: NCP1117
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 20V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 12V; 1A; SOT223; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.2V
Output voltage: 12V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: NCP1117
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 20V
на замовлення 2509 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 81.40 грн |
12+ | 32.88 грн |
25+ | 28.42 грн |
45+ | 19.88 грн |
124+ | 18.75 грн |
1000+ | 18.07 грн |
NCP1117ST15T3G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.2V
Output voltage: 1.5V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: NCP1117
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 20V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.2V
Output voltage: 1.5V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: NCP1117
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 20V
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од. на суму грн.
NCP1117ST18T3G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.2V
Output voltage: 1.8V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: NCP1117
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 20V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.2V
Output voltage: 1.8V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: NCP1117
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 20V
на замовлення 3306 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 83.03 грн |
8+ | 52.91 грн |
10+ | 42.63 грн |
25+ | 32.05 грн |
50+ | 26.31 грн |
60+ | 14.97 грн |
165+ | 14.14 грн |
NCP1117ST25T3G | ![]() |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.2V
Output voltage: 2.5V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: NCP1117
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 20V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.2V
Output voltage: 2.5V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: NCP1117
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 20V
на замовлення 3159 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 29.31 грн |
15+ | 26.53 грн |
59+ | 15.34 грн |
160+ | 14.51 грн |
NCP1117ST33T3G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.2V
Output voltage: 3.3V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: NCP1117
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 4.75...10V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.2V
Output voltage: 3.3V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: NCP1117
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 4.75...10V
на замовлення 2998 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 41.52 грн |
14+ | 28.95 грн |
50+ | 24.11 грн |
80+ | 11.26 грн |
219+ | 10.58 грн |
NCP1117STAT3G | ![]() |
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Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷20V; 1A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.2V
Output voltage: 1.25...20V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: NCP1117
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.4...20V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷20V; 1A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.2V
Output voltage: 1.25...20V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: NCP1117
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.4...20V
на замовлення 3484 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 78.96 грн |
10+ | 44.90 грн |
25+ | 36.89 грн |
37+ | 24.42 грн |
101+ | 23.13 грн |
1000+ | 22.22 грн |
NCV1117DT33T5G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1.5A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.2V
Output voltage: 3.3V
Output current: 1.5A
Case: DPAK
Mounting: SMD
Manufacturer series: NCV1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Application: automotive industry
Input voltage: 1.25...20V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1.5A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.2V
Output voltage: 3.3V
Output current: 1.5A
Case: DPAK
Mounting: SMD
Manufacturer series: NCV1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Application: automotive industry
Input voltage: 1.25...20V
на замовлення 658 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 49.66 грн |
10+ | 38.48 грн |
45+ | 20.11 грн |
122+ | 18.97 грн |
MC14069UBDG |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Mounting: SMD
Operating temperature: -55...125°C
Case: SO14
Number of inputs: 1
Supply voltage: 3...18V DC
Number of channels: hex; 6
Delay time: 100ns
Kind of package: tube
Kind of gate: NOT
Technology: CMOS
Family: HEF4000B
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Mounting: SMD
Operating temperature: -55...125°C
Case: SO14
Number of inputs: 1
Supply voltage: 3...18V DC
Number of channels: hex; 6
Delay time: 100ns
Kind of package: tube
Kind of gate: NOT
Technology: CMOS
Family: HEF4000B
на замовлення 152 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 56.17 грн |
13+ | 29.86 грн |
33+ | 27.06 грн |
91+ | 25.55 грн |
110+ | 24.57 грн |
2N7002WT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.34A; 0.33W; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Power dissipation: 0.33W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 1.19Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.34A; 0.33W; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Power dissipation: 0.33W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 1.19Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 620 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 10.58 грн |
69+ | 5.52 грн |
116+ | 3.28 грн |
512+ | 1.74 грн |
FQT5P10TF |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.8A; 2W; SOT223
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -800mA
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.8A; 2W; SOT223
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -800mA
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
CAT24C32WI-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
FDS6898A |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 9.4A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 21mΩ
Gate charge: 23nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: 20V
Drain current: 9.4A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 9.4A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 21mΩ
Gate charge: 23nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: 20V
Drain current: 9.4A
на замовлення 2287 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 96.06 грн |
10+ | 60.02 грн |
21+ | 42.63 грн |
58+ | 40.29 грн |
FDS8949 |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 6A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 6A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 6A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 6A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1607 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 111.52 грн |
10+ | 61.83 грн |
21+ | 42.63 грн |
57+ | 40.36 грн |
500+ | 38.78 грн |
FDS8958B |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 6.4/-4.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20/±25V
On-state resistance: 39/72mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 6.4/-4.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20/±25V
On-state resistance: 39/72mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.