| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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FQPF45N15V2 | ONSEMI |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 31A; Idm: 180A; 66W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 31A Pulsed drain current: 180A Power dissipation: 66W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 40mΩ Mounting: THT Gate charge: 94nC Kind of package: tube Kind of channel: enhancement |
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В кошику од. на суму грн. | ||||||||||||||
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FQPF6N80CT | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; Idm: 22A; 51W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.2A Power dissipation: 51W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 22A Gate charge: 30nC |
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В кошику од. на суму грн. | ||||||||||||||
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FQPF22N30 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 7.6A; Idm: 48A; 56W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 7.6A Pulsed drain current: 48A Power dissipation: 56W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.16Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement |
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В кошику од. на суму грн. | ||||||||||||||
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FQPF27N25 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 8.9A; Idm: 56A; 55W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 8.9A Pulsed drain current: 56A Power dissipation: 55W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Gate charge: 65nC Kind of package: tube Kind of channel: enhancement |
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В кошику од. на суму грн. | ||||||||||||||
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FQPF2N80YDTU | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 950mA; Idm: 6A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 0.95A Pulsed drain current: 6A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 6.3Ω Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhancement |
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В кошику од. на суму грн. | ||||||||||||||
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FQPF32N20C | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 17.8A; Idm: 112A; 50W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 17.8A Pulsed drain current: 112A Power dissipation: 50W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 82mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMBZ5233BLT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 6V; SMD; SOT23; reel,tape; single diode Case: SOT23 Mounting: SMD Kind of package: reel; tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 6V Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: MMBZ52xxBLT1G |
на замовлення 5794 шт: термін постачання 14-30 дні (днів) |
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KSC5026MOS | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 800V; 1.5A; 20W; TO126ISO Mounting: THT Case: TO126ISO Type of transistor: NPN Collector current: 1.5A Pulsed collector current: 5A Power dissipation: 20W Current gain: 20...40 Collector-emitter voltage: 800V Frequency: 15MHz Polarisation: bipolar Kind of package: bulk |
на замовлення 1977 шт: термін постачання 14-30 дні (днів) |
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FQD16N25CTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 10.1A; 160W; DPAK Type of transistor: N-MOSFET Technology: QFET® Power dissipation: 160W Case: DPAK Mounting: SMD Gate charge: 53.5nC Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: 250V On-state resistance: 0.27Ω Kind of channel: enhancement Drain current: 10.1A Gate-source voltage: ±30V |
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В кошику од. на суму грн. | ||||||||||||||
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FQP16N25 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 10A; Idm: 64A; 142W; TO220AB Type of transistor: N-MOSFET Power dissipation: 142W Case: TO220AB Mounting: THT Gate charge: 35nC Kind of package: tube Pulsed drain current: 64A Polarisation: unipolar Drain-source voltage: 250V On-state resistance: 0.23Ω Kind of channel: enhancement Drain current: 10A Gate-source voltage: ±30V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| LM2903VDR2G | ONSEMI |
 Category: SMD comparatorsDescription: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8; reel,tape Type of integrated circuit: comparator Kind of comparator: universal Number of comparators: 2 Operating voltage: 2...36V Mounting: SMT Case: SO8 Operating temperature: -40...125°C Input offset voltage: 7mV Kind of package: reel; tape Input offset current: 5nA Input bias current: 20nA |
товару немає в наявності |
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QRD1114 | ONSEMI |
Category: PCB Photoelectric Sensors Description: Sensor: photoelectric; diffuse-reflective; NPN; Usup: 5VDC; PCB Type of sensor: photoelectric Operation mode: diffuse-reflective Output configuration: NPN Supply voltage: 5V DC Mounting: PCB Body dimensions: 4.39x6.1x4.65mm Operating temperature: -40...85°C |
на замовлення 65 шт: термін постачання 14-30 дні (днів) |
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| NCV2931CDR2G | ONSEMI |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 2.7÷29.5V; 0.1A Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Output voltage: 2.7...29.5V Output current: 0.1A Case: SO8 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
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| NCV7327MW0R2G | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; transceiver; 5÷18VDC; LIN; SMD; DFNW8; reel,tape Case: DFNW8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Application: automotive industry Interface: LIN Type of integrated circuit: interface Kind of integrated circuit: transceiver Supply voltage: 5...18V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NCV7357MW0R2G | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: CAN transceiver; 4.75÷5.25VDC; CAN FD; SMD; DFNW8; Ch: 1 Case: DFNW8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Application: automotive industry Interface: CAN FD Type of integrated circuit: CAN transceiver Number of channels: 1 Supply voltage: 4.75...5.25V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NCV7357MW3R2G | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: CAN transceiver; 4.75÷5.25VDC; CAN FD; SMD; DFNW8; Ch: 1 Case: DFNW8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Application: automotive industry Interface: CAN FD Type of integrated circuit: CAN transceiver Number of channels: 1 Supply voltage: 4.75...5.25V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NCV8164AML300TCG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; DFNW8; SMD; Ch: 1 Case: DFNW8 Mounting: SMD Kind of package: reel; tape Application: automotive industry Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3V Output current: 0.3A Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NCV8165ML330TBG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DFNW8; SMD Case: DFNW8 Mounting: SMD Kind of package: reel; tape Application: automotive industry Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3.3V Output current: 0.5A Number of channels: 1 |
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В кошику од. на суму грн. | |||||||||||||||
| NCV8187AMLE330TCG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1.2A; DFNW8; SMD Case: DFNW8 Kind of voltage regulator: fixed; LDO; linear Kind of package: reel; tape Mounting: SMD Type of integrated circuit: voltage regulator Output current: 1.2A Number of channels: 1 Output voltage: 3.3V Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NCV8705ML33TCG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DFNW8; SMD Case: DFNW8 Mounting: SMD Kind of package: reel; tape Application: automotive industry Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3.3V Output current: 0.5A Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| FDWS86068-F085 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 214W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 80A Power dissipation: 214W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 6.4mΩ Mounting: SMD Gate charge: 31nC Kind of package: reel; tape Kind of channel: enhancement |
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| FDWS86369-F085 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 65A; 107W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 65A Power dissipation: 107W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhancement |
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| FDWS86380-F085 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 50A; 75W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 50A Power dissipation: 75W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 13.4mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
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| NCV8164AML120TCG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.3A; DFNW8; SMD Case: DFNW8 Mounting: SMD Kind of package: reel; tape Application: automotive industry Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 1.2V Output current: 0.3A Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NCV8164AML150TCG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.3A; DFNW8; SMD Case: DFNW8 Mounting: SMD Kind of package: reel; tape Application: automotive industry Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 1.5V Output current: 0.3A Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NCV8164AML180TCG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; DFNW8; SMD Case: DFNW8 Mounting: SMD Kind of package: reel; tape Application: automotive industry Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 1.8V Output current: 0.3A Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NCV8164AML250TCG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; DFNW8; SMD Case: DFNW8 Mounting: SMD Kind of package: reel; tape Application: automotive industry Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 2.5V Output current: 0.3A Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NCV8164AML330TCG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; DFNW8; SMD Case: DFNW8 Mounting: SMD Kind of package: reel; tape Application: automotive industry Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3.3V Output current: 0.3A Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NCV8164AMLADJTCG | ONSEMI |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; -0.3÷6.3V; 0.3A Case: DFNW8 Mounting: SMD Kind of package: reel; tape Application: automotive industry Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Output voltage: -0.3...6.3V Output current: 0.3A Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NCV8165ML330TCG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DFNW8; SMD Case: DFNW8 Mounting: SMD Kind of package: reel; tape Application: automotive industry Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3.3V Output current: 0.5A Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NCV8187AMLE180TCG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1.2A; DFNW8; SMD Case: DFNW8 Mounting: SMD Kind of package: reel; tape Application: automotive industry Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 1.8V Output current: 1.2A Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NCV8187AMLE280TCG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 1.2A; DFNW8; SMD Case: DFNW8 Mounting: SMD Kind of package: reel; tape Application: automotive industry Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 2.8V Output current: 1.2A Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NCV8187AMLEADJTCG | ONSEMI |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷5.2V; 1.2A Case: DFNW8 Mounting: SMD Kind of package: reel; tape Application: automotive industry Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Output voltage: 0.8...5.2V Output current: 1.2A Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| FDMT800100DC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 102A; Idm: 989A; 156W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 102A Pulsed drain current: 989A Power dissipation: 156W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 5.39mΩ Mounting: SMD Gate charge: 111nC Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||
| FDMT800120DC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 81A; Idm: 767A; 156W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 120V Drain current: 81A Pulsed drain current: 767A Power dissipation: 156W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 7.7mΩ Mounting: SMD Gate charge: 107nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| FDMT800150DC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 62A; Idm: 561A; 156W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 62A Pulsed drain current: 561A Power dissipation: 156W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Gate charge: 108nC Kind of package: reel; tape Kind of channel: enhancement |
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| FDMT800152DC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 45A; Idm: 413A; 113W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 45A Pulsed drain current: 413A Power dissipation: 113W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 19mΩ Mounting: SMD Gate charge: 83nC Kind of package: reel; tape Kind of channel: enhancement |
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| FDMT80040DC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 265A; Idm: 2644A; 156W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 265A Pulsed drain current: 2644A Power dissipation: 156W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 0.9mΩ Mounting: SMD Gate charge: 338nC Kind of package: reel; tape Kind of channel: enhancement |
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| FDMT80080DC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 160A; Idm: 1453A; 156W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 160A Pulsed drain current: 1453A Power dissipation: 156W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 2.22mΩ Mounting: SMD Gate charge: 273nC Kind of package: reel; tape Kind of channel: enhancement |
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| NTMTS002N08MC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 229A; Idm: 3577A; 208W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 229A Pulsed drain current: 3577A Power dissipation: 208W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Gate charge: 89nC Kind of package: reel; tape Kind of channel: enhancement |
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| NTMTS1D2N08H | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 335A; Idm: 900A; 150W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 335A Pulsed drain current: 900A Power dissipation: 150W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 1.1mΩ Mounting: SMD Gate charge: 147nC Kind of package: reel; tape Kind of channel: enhancement |
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| NTMTS1D5N08H | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 255A; Idm: 900A; 83W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 255A Pulsed drain current: 900A Power dissipation: 83W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 1.5mΩ Mounting: SMD Gate charge: 125nC Kind of package: reel; tape Kind of channel: enhancement |
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| NTMTS1D6N10MCTXG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 273A; Idm: 900A; 146W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 273A Pulsed drain current: 900A Power dissipation: 146W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Gate charge: 106nC Kind of package: reel; tape Kind of channel: enhancement |
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| NTMTS4D3N15MC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 174A; Idm: 900A; 293W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 174A Pulsed drain current: 900A Power dissipation: 293W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 4.45mΩ Mounting: SMD Gate charge: 79nC Kind of package: reel; tape Kind of channel: enhancement |
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| NTMTSC1D5N08MC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 287A; Idm: 3500A; 250W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 287A Pulsed drain current: 3500A Power dissipation: 250W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 1.56mΩ Mounting: SMD Gate charge: 101nC Kind of package: reel; tape Kind of channel: enhancement |
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| NVMTS001N06CTXG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 376A; Idm: 900A; 122W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 376A Pulsed drain current: 900A Power dissipation: 122W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 910µΩ Mounting: SMD Gate charge: 113nC Kind of package: reel; tape Kind of channel: enhancement |
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| NVMTS0D7N04CLTXG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 433A; Idm: 900A; 103W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 433A Pulsed drain current: 900A Power dissipation: 103W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 630µΩ Mounting: SMD Gate charge: 99nC Kind of package: reel; tape Kind of channel: enhancement |
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| NVMTS0D7N04CTXG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 420A; Idm: 900A; 103W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 420A Pulsed drain current: 900A Power dissipation: 103W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 670µΩ Mounting: SMD Gate charge: 0.14µC Kind of package: reel; tape Kind of channel: enhancement |
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| NVMTS1D5N08H | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 273A; Idm: 900A; 129W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 273A Pulsed drain current: 900A Power dissipation: 129W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Gate charge: 125nC Kind of package: reel; tape Kind of channel: enhancement |
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| NVMTS1D6N10MCTXG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 273A; Idm: 900A; 146W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 273A Pulsed drain current: 900A Power dissipation: 146W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Gate charge: 106nC Kind of package: reel; tape Kind of channel: enhancement |
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| MUN2112T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 338mW; SC59; R1: 22kΩ Polarisation: bipolar Kind of transistor: BRT Case: SC59 Mounting: SMD Type of transistor: PNP Kind of package: reel; tape Collector current: 0.1A Power dissipation: 338mW Collector-emitter voltage: 50V Current gain: 60...100 Quantity in set/package: 3000pcs. Base-emitter resistor: 22kΩ Base resistor: 22kΩ |
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| MUN5112T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 310mW; SC70,SOT323 Polarisation: bipolar Kind of transistor: BRT Case: SC70; SOT323 Mounting: SMD Type of transistor: PNP Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.31W Collector-emitter voltage: 50V Current gain: 60...100 Quantity in set/package: 3000pcs. Base-emitter resistor: 22kΩ Base resistor: 22kΩ |
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|
|
SMUN5112T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323 Application: automotive industry Polarisation: bipolar Kind of transistor: BRT Case: SC70; SOT323 Mounting: SMD Type of transistor: PNP Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.31W Collector-emitter voltage: 50V Base-emitter resistor: 22kΩ Base resistor: 22kΩ |
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| FNB41060B2 | ONSEMI |
Category: Power switches - integrated circuits Description: IC: driver; 10A; Uoper: 600V; Uinsul: 2kV; 32W Type of integrated circuit: driver Output current: 10A DC supply current: 3.65mA Mounting: THT Operating temperature: -40...150°C Operating voltage: 600V Insulation voltage: 2kV Power dissipation: 32W |
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|
|
BZX84C11LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 11V; SMD; SOT23; reel,tape; single diode; BZX84C Type of diode: Zener Power dissipation: 0.3W Zener voltage: 11V Mounting: SMD Tolerance: ±5% Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: BZX84C |
на замовлення 499 шт: термін постачання 14-30 дні (днів) |
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| SZBZX84C11ET1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 11V; SMD; SOT23; reel,tape; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 11V Mounting: SMD Tolerance: ±5% Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: BZX84CxxET1G Application: automotive industry |
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| SZBZX84C11LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 11V; SMD; SOT23; reel,tape; single diode; BZX84C Type of diode: Zener Power dissipation: 0.3W Zener voltage: 11V Mounting: SMD Tolerance: ±5% Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: BZX84C Application: automotive industry |
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 |
MC10ELT20DG | ONSEMI |
Category: Level translators Description: IC: digital; logic level voltage translator; Ch: 1; SMD; SO8; tube Type of integrated circuit: digital Kind of integrated circuit: logic level voltage translator Number of channels: 1 Mounting: SMD Case: SO8 Operating temperature: -40...85°C Kind of package: tube Number of inputs: 1 Number of outputs: 2 Manufacturer series: 10ELT |
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|
|
MC10ELT25DG | ONSEMI |
Category: Level translators Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1 Type of integrated circuit: digital Kind of integrated circuit: logic level voltage translator; non-inverting Number of channels: 1 Mounting: SMD Case: SO8 Operating temperature: -40...85°C Kind of package: tube Number of inputs: 2 Number of outputs: 1 Manufacturer series: 10ELT |
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 |
MC10EPT20DTG | ONSEMI |
Category: Level translators Description: IC: digital; logic level voltage translator; Ch: 1; SMD; TSSOP8 Type of integrated circuit: digital Kind of integrated circuit: logic level voltage translator Number of channels: 1 Mounting: SMD Case: TSSOP8 Operating temperature: -40...85°C Kind of package: tube Number of inputs: 1 Number of outputs: 2 Manufacturer series: 10EPT |
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| FQPF45N15V2 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 31A; Idm: 180A; 66W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 31A
Pulsed drain current: 180A
Power dissipation: 66W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 31A; Idm: 180A; 66W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 31A
Pulsed drain current: 180A
Power dissipation: 66W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
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| FQPF6N80CT |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; Idm: 22A; 51W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.2A
Power dissipation: 51W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 22A
Gate charge: 30nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; Idm: 22A; 51W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.2A
Power dissipation: 51W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 22A
Gate charge: 30nC
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| FQPF22N30 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 7.6A; Idm: 48A; 56W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 7.6A
Pulsed drain current: 48A
Power dissipation: 56W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 7.6A; Idm: 48A; 56W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 7.6A
Pulsed drain current: 48A
Power dissipation: 56W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
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| FQPF27N25 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.9A; Idm: 56A; 55W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.9A
Pulsed drain current: 56A
Power dissipation: 55W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.9A; Idm: 56A; 55W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.9A
Pulsed drain current: 56A
Power dissipation: 55W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
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| FQPF2N80YDTU |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 950mA; Idm: 6A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.95A
Pulsed drain current: 6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 6.3Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 950mA; Idm: 6A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.95A
Pulsed drain current: 6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 6.3Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
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| FQPF32N20C |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17.8A; Idm: 112A; 50W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 17.8A
Pulsed drain current: 112A
Power dissipation: 50W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17.8A; Idm: 112A; 50W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 17.8A
Pulsed drain current: 112A
Power dissipation: 50W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
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| MMBZ5233BLT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6V; SMD; SOT23; reel,tape; single diode
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6V
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMBZ52xxBLT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6V; SMD; SOT23; reel,tape; single diode
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6V
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMBZ52xxBLT1G
на замовлення 5794 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.29 грн |
| 90+ | 4.74 грн |
| 105+ | 4.06 грн |
| 200+ | 2.12 грн |
| 500+ | 1.46 грн |
| 1000+ | 1.27 грн |
| 3000+ | 1.17 грн |
| KSC5026MOS |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 800V; 1.5A; 20W; TO126ISO
Mounting: THT
Case: TO126ISO
Type of transistor: NPN
Collector current: 1.5A
Pulsed collector current: 5A
Power dissipation: 20W
Current gain: 20...40
Collector-emitter voltage: 800V
Frequency: 15MHz
Polarisation: bipolar
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 800V; 1.5A; 20W; TO126ISO
Mounting: THT
Case: TO126ISO
Type of transistor: NPN
Collector current: 1.5A
Pulsed collector current: 5A
Power dissipation: 20W
Current gain: 20...40
Collector-emitter voltage: 800V
Frequency: 15MHz
Polarisation: bipolar
Kind of package: bulk
на замовлення 1977 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 92.99 грн |
| 10+ | 54.94 грн |
| 100+ | 36.82 грн |
| 500+ | 33.69 грн |
| FQD16N25CTM |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10.1A; 160W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Power dissipation: 160W
Case: DPAK
Mounting: SMD
Gate charge: 53.5nC
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 250V
On-state resistance: 0.27Ω
Kind of channel: enhancement
Drain current: 10.1A
Gate-source voltage: ±30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10.1A; 160W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Power dissipation: 160W
Case: DPAK
Mounting: SMD
Gate charge: 53.5nC
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 250V
On-state resistance: 0.27Ω
Kind of channel: enhancement
Drain current: 10.1A
Gate-source voltage: ±30V
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| FQP16N25 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10A; Idm: 64A; 142W; TO220AB
Type of transistor: N-MOSFET
Power dissipation: 142W
Case: TO220AB
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Pulsed drain current: 64A
Polarisation: unipolar
Drain-source voltage: 250V
On-state resistance: 0.23Ω
Kind of channel: enhancement
Drain current: 10A
Gate-source voltage: ±30V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10A; Idm: 64A; 142W; TO220AB
Type of transistor: N-MOSFET
Power dissipation: 142W
Case: TO220AB
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Pulsed drain current: 64A
Polarisation: unipolar
Drain-source voltage: 250V
On-state resistance: 0.23Ω
Kind of channel: enhancement
Drain current: 10A
Gate-source voltage: ±30V
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| LM2903VDR2G | |
|
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Operating voltage: 2...36V
Mounting: SMT
Case: SO8
Operating temperature: -40...125°C
Input offset voltage: 7mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 20nA
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Operating voltage: 2...36V
Mounting: SMT
Case: SO8
Operating temperature: -40...125°C
Input offset voltage: 7mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 20nA
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| QRD1114 | |
|
Виробник: ONSEMI
Category: PCB Photoelectric Sensors
Description: Sensor: photoelectric; diffuse-reflective; NPN; Usup: 5VDC; PCB
Type of sensor: photoelectric
Operation mode: diffuse-reflective
Output configuration: NPN
Supply voltage: 5V DC
Mounting: PCB
Body dimensions: 4.39x6.1x4.65mm
Operating temperature: -40...85°C
Category: PCB Photoelectric Sensors
Description: Sensor: photoelectric; diffuse-reflective; NPN; Usup: 5VDC; PCB
Type of sensor: photoelectric
Operation mode: diffuse-reflective
Output configuration: NPN
Supply voltage: 5V DC
Mounting: PCB
Body dimensions: 4.39x6.1x4.65mm
Operating temperature: -40...85°C
на замовлення 65 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 95.66 грн |
| 10+ | 94.81 грн |
| NCV2931CDR2G |
|
Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.7÷29.5V; 0.1A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 2.7...29.5V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.7÷29.5V; 0.1A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 2.7...29.5V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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| NCV7327MW0R2G |
|
Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5÷18VDC; LIN; SMD; DFNW8; reel,tape
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Application: automotive industry
Interface: LIN
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5...18V DC
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5÷18VDC; LIN; SMD; DFNW8; reel,tape
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Application: automotive industry
Interface: LIN
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5...18V DC
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| NCV7357MW0R2G |
|
Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: CAN transceiver; 4.75÷5.25VDC; CAN FD; SMD; DFNW8; Ch: 1
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Application: automotive industry
Interface: CAN FD
Type of integrated circuit: CAN transceiver
Number of channels: 1
Supply voltage: 4.75...5.25V DC
Category: Interfaces others - integrated circuits
Description: IC: CAN transceiver; 4.75÷5.25VDC; CAN FD; SMD; DFNW8; Ch: 1
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Application: automotive industry
Interface: CAN FD
Type of integrated circuit: CAN transceiver
Number of channels: 1
Supply voltage: 4.75...5.25V DC
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| NCV7357MW3R2G |
|
Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: CAN transceiver; 4.75÷5.25VDC; CAN FD; SMD; DFNW8; Ch: 1
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Application: automotive industry
Interface: CAN FD
Type of integrated circuit: CAN transceiver
Number of channels: 1
Supply voltage: 4.75...5.25V DC
Category: Interfaces others - integrated circuits
Description: IC: CAN transceiver; 4.75÷5.25VDC; CAN FD; SMD; DFNW8; Ch: 1
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Application: automotive industry
Interface: CAN FD
Type of integrated circuit: CAN transceiver
Number of channels: 1
Supply voltage: 4.75...5.25V DC
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| NCV8164AML300TCG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; DFNW8; SMD; Ch: 1
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.3A
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; DFNW8; SMD; Ch: 1
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.3A
Number of channels: 1
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| NCV8165ML330TBG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DFNW8; SMD
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.5A
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DFNW8; SMD
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.5A
Number of channels: 1
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| NCV8187AMLE330TCG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1.2A; DFNW8; SMD
Case: DFNW8
Kind of voltage regulator: fixed; LDO; linear
Kind of package: reel; tape
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 1.2A
Number of channels: 1
Output voltage: 3.3V
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1.2A; DFNW8; SMD
Case: DFNW8
Kind of voltage regulator: fixed; LDO; linear
Kind of package: reel; tape
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 1.2A
Number of channels: 1
Output voltage: 3.3V
Application: automotive industry
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| NCV8705ML33TCG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DFNW8; SMD
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.5A
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DFNW8; SMD
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.5A
Number of channels: 1
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| FDWS86068-F085 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 214W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 214W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 214W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 214W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDWS86369-F085 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 65A; 107W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 65A
Power dissipation: 107W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 65A; 107W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 65A
Power dissipation: 107W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDWS86380-F085 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 50A; 75W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 50A
Power dissipation: 75W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 13.4mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 50A; 75W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 50A
Power dissipation: 75W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 13.4mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NCV8164AML120TCG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.3A; DFNW8; SMD
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.2V
Output current: 0.3A
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.3A; DFNW8; SMD
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.2V
Output current: 0.3A
Number of channels: 1
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| NCV8164AML150TCG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.3A; DFNW8; SMD
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.5V
Output current: 0.3A
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.3A; DFNW8; SMD
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.5V
Output current: 0.3A
Number of channels: 1
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| NCV8164AML180TCG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; DFNW8; SMD
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.8V
Output current: 0.3A
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; DFNW8; SMD
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.8V
Output current: 0.3A
Number of channels: 1
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| NCV8164AML250TCG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; DFNW8; SMD
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 2.5V
Output current: 0.3A
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; DFNW8; SMD
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 2.5V
Output current: 0.3A
Number of channels: 1
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| NCV8164AML330TCG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; DFNW8; SMD
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.3A
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; DFNW8; SMD
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.3A
Number of channels: 1
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| NCV8164AMLADJTCG |
|
Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; -0.3÷6.3V; 0.3A
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: -0.3...6.3V
Output current: 0.3A
Number of channels: 1
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; -0.3÷6.3V; 0.3A
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: -0.3...6.3V
Output current: 0.3A
Number of channels: 1
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| NCV8165ML330TCG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DFNW8; SMD
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.5A
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DFNW8; SMD
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.5A
Number of channels: 1
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| NCV8187AMLE180TCG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1.2A; DFNW8; SMD
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.8V
Output current: 1.2A
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1.2A; DFNW8; SMD
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.8V
Output current: 1.2A
Number of channels: 1
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| NCV8187AMLE280TCG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 1.2A; DFNW8; SMD
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 2.8V
Output current: 1.2A
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 1.2A; DFNW8; SMD
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 2.8V
Output current: 1.2A
Number of channels: 1
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| NCV8187AMLEADJTCG |
|
Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷5.2V; 1.2A
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 0.8...5.2V
Output current: 1.2A
Number of channels: 1
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷5.2V; 1.2A
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 0.8...5.2V
Output current: 1.2A
Number of channels: 1
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| FDMT800100DC |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 102A; Idm: 989A; 156W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 102A
Pulsed drain current: 989A
Power dissipation: 156W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 5.39mΩ
Mounting: SMD
Gate charge: 111nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 102A; Idm: 989A; 156W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 102A
Pulsed drain current: 989A
Power dissipation: 156W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 5.39mΩ
Mounting: SMD
Gate charge: 111nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDMT800120DC |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 81A; Idm: 767A; 156W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 81A
Pulsed drain current: 767A
Power dissipation: 156W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 107nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 81A; Idm: 767A; 156W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 81A
Pulsed drain current: 767A
Power dissipation: 156W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 107nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDMT800150DC |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 62A; Idm: 561A; 156W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 62A
Pulsed drain current: 561A
Power dissipation: 156W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 62A; Idm: 561A; 156W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 62A
Pulsed drain current: 561A
Power dissipation: 156W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDMT800152DC |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 45A; Idm: 413A; 113W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 45A
Pulsed drain current: 413A
Power dissipation: 113W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 83nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 45A; Idm: 413A; 113W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 45A
Pulsed drain current: 413A
Power dissipation: 113W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 83nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDMT80040DC |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 265A; Idm: 2644A; 156W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 265A
Pulsed drain current: 2644A
Power dissipation: 156W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 0.9mΩ
Mounting: SMD
Gate charge: 338nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 265A; Idm: 2644A; 156W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 265A
Pulsed drain current: 2644A
Power dissipation: 156W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 0.9mΩ
Mounting: SMD
Gate charge: 338nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDMT80080DC |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 160A; Idm: 1453A; 156W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 160A
Pulsed drain current: 1453A
Power dissipation: 156W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 2.22mΩ
Mounting: SMD
Gate charge: 273nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 160A; Idm: 1453A; 156W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 160A
Pulsed drain current: 1453A
Power dissipation: 156W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 2.22mΩ
Mounting: SMD
Gate charge: 273nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NTMTS002N08MC |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 229A; Idm: 3577A; 208W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 229A
Pulsed drain current: 3577A
Power dissipation: 208W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 89nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 229A; Idm: 3577A; 208W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 229A
Pulsed drain current: 3577A
Power dissipation: 208W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 89nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NTMTS1D2N08H |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 335A; Idm: 900A; 150W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 335A
Pulsed drain current: 900A
Power dissipation: 150W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Gate charge: 147nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 335A; Idm: 900A; 150W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 335A
Pulsed drain current: 900A
Power dissipation: 150W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Gate charge: 147nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NTMTS1D5N08H |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 255A; Idm: 900A; 83W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 255A
Pulsed drain current: 900A
Power dissipation: 83W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 125nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 255A; Idm: 900A; 83W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 255A
Pulsed drain current: 900A
Power dissipation: 83W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 125nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NTMTS1D6N10MCTXG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 273A; Idm: 900A; 146W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 273A
Pulsed drain current: 900A
Power dissipation: 146W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 273A; Idm: 900A; 146W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 273A
Pulsed drain current: 900A
Power dissipation: 146W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NTMTS4D3N15MC |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 174A; Idm: 900A; 293W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 174A
Pulsed drain current: 900A
Power dissipation: 293W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 4.45mΩ
Mounting: SMD
Gate charge: 79nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 174A; Idm: 900A; 293W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 174A
Pulsed drain current: 900A
Power dissipation: 293W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 4.45mΩ
Mounting: SMD
Gate charge: 79nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NTMTSC1D5N08MC |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 287A; Idm: 3500A; 250W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 287A
Pulsed drain current: 3500A
Power dissipation: 250W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 1.56mΩ
Mounting: SMD
Gate charge: 101nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 287A; Idm: 3500A; 250W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 287A
Pulsed drain current: 3500A
Power dissipation: 250W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 1.56mΩ
Mounting: SMD
Gate charge: 101nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVMTS001N06CTXG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 376A; Idm: 900A; 122W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 376A
Pulsed drain current: 900A
Power dissipation: 122W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 910µΩ
Mounting: SMD
Gate charge: 113nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 376A; Idm: 900A; 122W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 376A
Pulsed drain current: 900A
Power dissipation: 122W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 910µΩ
Mounting: SMD
Gate charge: 113nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVMTS0D7N04CLTXG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 433A; Idm: 900A; 103W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 433A
Pulsed drain current: 900A
Power dissipation: 103W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 630µΩ
Mounting: SMD
Gate charge: 99nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 433A; Idm: 900A; 103W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 433A
Pulsed drain current: 900A
Power dissipation: 103W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 630µΩ
Mounting: SMD
Gate charge: 99nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVMTS0D7N04CTXG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 420A; Idm: 900A; 103W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 420A
Pulsed drain current: 900A
Power dissipation: 103W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 670µΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 420A; Idm: 900A; 103W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 420A
Pulsed drain current: 900A
Power dissipation: 103W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 670µΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVMTS1D5N08H |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 273A; Idm: 900A; 129W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 273A
Pulsed drain current: 900A
Power dissipation: 129W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 125nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 273A; Idm: 900A; 129W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 273A
Pulsed drain current: 900A
Power dissipation: 129W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 125nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVMTS1D6N10MCTXG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 273A; Idm: 900A; 146W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 273A
Pulsed drain current: 900A
Power dissipation: 146W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 273A; Idm: 900A; 146W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 273A
Pulsed drain current: 900A
Power dissipation: 146W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhancement
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| MUN2112T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 338mW; SC59; R1: 22kΩ
Polarisation: bipolar
Kind of transistor: BRT
Case: SC59
Mounting: SMD
Type of transistor: PNP
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 338mW
Collector-emitter voltage: 50V
Current gain: 60...100
Quantity in set/package: 3000pcs.
Base-emitter resistor: 22kΩ
Base resistor: 22kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 338mW; SC59; R1: 22kΩ
Polarisation: bipolar
Kind of transistor: BRT
Case: SC59
Mounting: SMD
Type of transistor: PNP
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 338mW
Collector-emitter voltage: 50V
Current gain: 60...100
Quantity in set/package: 3000pcs.
Base-emitter resistor: 22kΩ
Base resistor: 22kΩ
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| MUN5112T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 310mW; SC70,SOT323
Polarisation: bipolar
Kind of transistor: BRT
Case: SC70; SOT323
Mounting: SMD
Type of transistor: PNP
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.31W
Collector-emitter voltage: 50V
Current gain: 60...100
Quantity in set/package: 3000pcs.
Base-emitter resistor: 22kΩ
Base resistor: 22kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 310mW; SC70,SOT323
Polarisation: bipolar
Kind of transistor: BRT
Case: SC70; SOT323
Mounting: SMD
Type of transistor: PNP
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.31W
Collector-emitter voltage: 50V
Current gain: 60...100
Quantity in set/package: 3000pcs.
Base-emitter resistor: 22kΩ
Base resistor: 22kΩ
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| SMUN5112T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
Case: SC70; SOT323
Mounting: SMD
Type of transistor: PNP
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.31W
Collector-emitter voltage: 50V
Base-emitter resistor: 22kΩ
Base resistor: 22kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
Case: SC70; SOT323
Mounting: SMD
Type of transistor: PNP
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.31W
Collector-emitter voltage: 50V
Base-emitter resistor: 22kΩ
Base resistor: 22kΩ
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| FNB41060B2 |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: driver; 10A; Uoper: 600V; Uinsul: 2kV; 32W
Type of integrated circuit: driver
Output current: 10A
DC supply current: 3.65mA
Mounting: THT
Operating temperature: -40...150°C
Operating voltage: 600V
Insulation voltage: 2kV
Power dissipation: 32W
Category: Power switches - integrated circuits
Description: IC: driver; 10A; Uoper: 600V; Uinsul: 2kV; 32W
Type of integrated circuit: driver
Output current: 10A
DC supply current: 3.65mA
Mounting: THT
Operating temperature: -40...150°C
Operating voltage: 600V
Insulation voltage: 2kV
Power dissipation: 32W
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| BZX84C11LT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 11V; SMD; SOT23; reel,tape; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 11V; SMD; SOT23; reel,tape; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84C
на замовлення 499 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.38 грн |
| 100+ | 4.23 грн |
| 117+ | 3.64 грн |
| 212+ | 2.00 грн |
| 264+ | 1.61 грн |
| SZBZX84C11ET1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 11V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 11V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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| SZBZX84C11LT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 11V; SMD; SOT23; reel,tape; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 11V; SMD; SOT23; reel,tape; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84C
Application: automotive industry
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| MC10ELT20DG |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 1; SMD; SO8; tube
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator
Number of channels: 1
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 1
Number of outputs: 2
Manufacturer series: 10ELT
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 1; SMD; SO8; tube
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator
Number of channels: 1
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 1
Number of outputs: 2
Manufacturer series: 10ELT
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| MC10ELT25DG |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
Number of channels: 1
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 2
Number of outputs: 1
Manufacturer series: 10ELT
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
Number of channels: 1
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 2
Number of outputs: 1
Manufacturer series: 10ELT
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| MC10EPT20DTG |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 1; SMD; TSSOP8
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator
Number of channels: 1
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 1
Number of outputs: 2
Manufacturer series: 10EPT
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 1; SMD; TSSOP8
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator
Number of channels: 1
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 1
Number of outputs: 2
Manufacturer series: 10EPT
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