Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
NSI45015WT1G | ONSEMI |
![]() Description: IC: driver; current regulator,LED driver; SOD123; 45VDC; 460mW Type of integrated circuit: driver Kind of integrated circuit: current regulator; LED driver Case: SOD123 Mounting: SMD Operating temperature: -55...150°C Operating voltage: 45V DC Power dissipation: 0.46W Operating current: 15mA |
на замовлення 2519 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
MURS120T3G | ONSEMI |
![]() Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMB; Ufmax: 875mV; Ifsm: 40A Mounting: SMD Case: SMB Max. off-state voltage: 200V Max. forward voltage: 0.875V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 35ns Max. forward impulse current: 40A Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: ultrafast switching |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
![]() |
MC74AC245DWG | ONSEMI |
![]() Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20; AC; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Mounting: SMD Case: SO20 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: reel; tape Quiescent current: 80µA Manufacturer series: AC |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
![]() |
MJ15024G | ONSEMI |
![]() ![]() Description: Transistor: NPN; bipolar; 250V; 16A; 250W; TO3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 250V Collector current: 16A Power dissipation: 250W Case: TO3 Mounting: THT Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
MMBT4401LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.225/0.3W Case: SOT23; TO236AB Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
FDA16N50-F109 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; Idm: 66A; 205W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT Kind of package: tube Kind of channel: enhancement Drain-source voltage: 500V Drain current: 9.9A On-state resistance: 0.38Ω Power dissipation: 205W Gate charge: 45nC Technology: UniFET™ Gate-source voltage: ±30V Pulsed drain current: 66A Case: TO3PN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
FDA16N50LDTU | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; Idm: 66A; 205W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT Kind of package: tube Kind of channel: enhancement Drain-source voltage: 500V Drain current: 3.3A On-state resistance: 0.38Ω Power dissipation: 205W Gate charge: 45nC Technology: DMOS; UniFET™ Gate-source voltage: ±30V Pulsed drain current: 66A Case: TO3PN |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
![]() |
FQAF16N50 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 7.15A; 110W; TO3PF Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 500V Drain current: 7.15A Power dissipation: 110W Case: TO3PF Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Gate charge: 75nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
MBR0530T1G | ONSEMI |
![]() Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 30V Load current: 0.5A Semiconductor structure: single diode Max. forward voltage: 0.43V Max. forward impulse current: 5.5A Kind of package: reel; tape |
на замовлення 14990 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
![]() |
MBR0530T3G | ONSEMI |
![]() Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 30V Load current: 0.5A Semiconductor structure: single diode Max. forward voltage: 0.43V Max. forward impulse current: 5.5A Kind of package: reel; tape |
на замовлення 3445 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
![]() |
MC33035DWG | ONSEMI |
![]() Description: IC: driver; brushless motor controller; SO24; Ch: 3; Usup: 0÷40VDC Operating temperature: -40...85°C Type of integrated circuit: driver Number of channels: 3 Kind of package: tube Kind of integrated circuit: brushless motor controller Mounting: SMD Case: SO24 Supply voltage: 0...40V DC Operating voltage: 10...30V DC |
на замовлення 50 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
![]() |
FDN340P | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -10A; 0.5W Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -20V Drain current: -2A Pulsed drain current: -10A Power dissipation: 0.5W Case: SuperSOT-3 Gate-source voltage: ±8V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 3369 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
![]() |
MOC3042M | ONSEMI |
![]() Description: Optotriac; 4.17kV; triac; DIP6; Ch: 1; MOC304XM; 1kV/μs Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: DIP6 Mounting: THT Number of channels: 1 Manufacturer series: MOC304XM Slew rate: 1kV/μs |
на замовлення 637 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
![]() |
NUD4001DR2G | ONSEMI |
![]() ![]() Description: IC: driver; LED driver; SO8; 500mA; 28V; Ch: 1; PWM Mounting: SMD Case: SO8 Operating temperature: -40...125°C Integrated circuit features: PWM Kind of integrated circuit: LED driver Output voltage: 28V Output current: 0.5A Type of integrated circuit: driver Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
NTJD4001NT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.18A; 0.272W Mounting: SMD Case: SC70-6; SC88; SOT363 Power dissipation: 0.272W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 0.18A On-state resistance: 1.5Ω Type of transistor: N-MOSFET x2 |
на замовлення 2039 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
![]() |
NVTJD4001NT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.18A; 0.272W Mounting: SMD Case: SC70-6; SC88; SOT363 Power dissipation: 0.272W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 0.18A On-state resistance: 1.5Ω Type of transistor: N-MOSFET x2 |
на замовлення 2910 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
![]() |
MMSZ4685T1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123; single diode Case: SOD123 Tolerance: ±5% Semiconductor structure: single diode Zener voltage: 3.6V Leakage current: 7.5µA Power dissipation: 0.5W Kind of package: reel; tape Type of diode: Zener Manufacturer series: MMSZ4xxT1G Mounting: SMD |
на замовлення 3194 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
![]() |
6N138M | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 5kV; DIP8; 6N138M Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: Darlington Insulation voltage: 5kV CTR@If: 300-1600%@1.6mA Case: DIP8 Manufacturer series: 6N138M |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
MMBFJ201 | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 200uA; 0.35W; SOT23; Igt: 50mA Gate current: 50mA Drain current: 200µA Type of transistor: N-JFET Power dissipation: 0.35W Polarisation: unipolar Kind of package: reel; tape Gate-source voltage: -40V Mounting: SMD Case: SOT23 |
на замовлення 1467 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
CAT24C04HU4I-GT3 | ONSEMI |
![]() Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 4kb EEPROM Interface: I2C Memory organisation: 512x8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
![]() |
FQD2N90TM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; DPAK Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Kind of package: reel; tape Gate charge: 15nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 6.8A Mounting: SMD Case: DPAK Drain-source voltage: 900V Drain current: 1.08A On-state resistance: 7.2Ω |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
FQU2N90TU-AM002 | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Kind of package: tube Gate charge: 15nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 6.8A Mounting: THT Case: IPAK Drain-source voltage: 900V Drain current: 1.08A On-state resistance: 7.2Ω |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FQU2N90TU-WS | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Kind of package: tube Gate charge: 15nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 6.8A Mounting: THT Case: IPAK Drain-source voltage: 900V Drain current: 1.08A On-state resistance: 7.2Ω |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
![]() |
NCP431ACLPRAG | ONSEMI |
![]() Description: IC: voltage reference source; 2.5V; ±1%; TO92; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±1% Mounting: THT Case: TO92 Operating temperature: 0...70°C Kind of package: reel; tape Maximum output current: 0.1A Operating voltage: 2.5...36V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
NCP431ACSNT1G | ONSEMI |
![]() Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: 0...70°C Kind of package: reel; tape Maximum output current: 0.1A Operating voltage: 2.5...36V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
FCPF11N60 | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 36W; TO220FP Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 650V Drain current: 11A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 52nC |
на замовлення 115 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
![]() |
FCPF11N60F | ONSEMI |
![]() Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 7A; Idm: 33A; 36W Type of transistor: N-MOSFET Technology: SJ-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 52nC Pulsed drain current: 33A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
FCPF11N60T | ONSEMI |
![]() Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 7A; Idm: 33A; 36W Type of transistor: N-MOSFET Technology: SJ-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 7A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 52nC Pulsed drain current: 33A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
FCP22N60N | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 205W; TO220AB Type of transistor: N-MOSFET Technology: SuperMOS® Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Power dissipation: 205W Case: TO220AB Gate-source voltage: ±45V On-state resistance: 0.165Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
FDD6637 | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -35V; -55A; 57W; DPAK Case: DPAK Drain-source voltage: -35V Drain current: -55A On-state resistance: 19mΩ Type of transistor: P-MOSFET Power dissipation: 57W Polarisation: unipolar Kind of package: reel; tape Gate charge: 35nC Technology: PowerTrench® Kind of channel: enhancement Gate-source voltage: ±25V Mounting: SMD |
на замовлення 2606 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
![]() |
MMBTH81 | ONSEMI |
![]() Description: Transistor: PNP; bipolar; RF; 20V; 50mA; 225mW; SOT23 Frequency: 600MHz Collector-emitter voltage: 20V Collector current: 50mA Type of transistor: PNP Power dissipation: 0.225W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: RF Mounting: SMD Case: SOT23 |
на замовлення 2925 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
![]() |
MM74HC86M | ONSEMI |
![]() Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube Type of integrated circuit: digital Operating temperature: -40...85°C Case: SO14 Number of inputs: 2 Supply voltage: 2...6V DC Number of channels: quad; 4 Quiescent current: 20µA Kind of package: tube Kind of gate: XOR Technology: CMOS Family: HC Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
MJH11020G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; Darlington; 200V; 15A; 150W; TO247-3 Case: TO247-3 Collector-emitter voltage: 200V Collector current: 15A Type of transistor: NPN Power dissipation: 150W Polarisation: bipolar Kind of package: tube Kind of transistor: Darlington Mounting: THT |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
![]() |
MJH11021G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; Darlington; 250V; 15A; 150W; TO247-3 Case: TO247-3 Collector-emitter voltage: 250V Collector current: 15A Type of transistor: PNP Power dissipation: 150W Polarisation: bipolar Kind of package: tube Kind of transistor: Darlington Mounting: THT |
на замовлення 47 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
![]() |
MJH11022G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; Darlington; 250V; 15A; 150W; TO247-3 Case: TO247-3 Collector-emitter voltage: 250V Collector current: 15A Type of transistor: NPN Power dissipation: 150W Polarisation: bipolar Kind of package: tube Kind of transistor: Darlington Mounting: THT |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
![]() |
MJD127T4G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 8A Power dissipation: 20W Case: DPAK Mounting: SMD |
на замовлення 2495 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
![]() |
BZX85C10 | ONSEMI |
![]() Description: Diode: Zener; 1.3W; 10V; bulk; DO41; single diode; 0.5uA; BZX85C Type of diode: Zener Power dissipation: 1.3W Zener voltage: 10V Kind of package: bulk Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: BZX85C Leakage current: 0.5µA |
на замовлення 877 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
![]() |
BZX85C15 | ONSEMI |
![]() Description: Diode: Zener; 1.3W; 15V; bulk; DO41; single diode; 0.5uA; BZX85C Type of diode: Zener Power dissipation: 1.3W Zener voltage: 15V Kind of package: bulk Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: BZX85C Leakage current: 0.5µA |
на замовлення 8745 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
![]() |
BZX85C16 | ONSEMI |
![]() Description: Diode: Zener; 1.3W; 16V; bulk; DO41; single diode; 0.5uA; BZX85C Type of diode: Zener Power dissipation: 1.3W Zener voltage: 16V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: BZX85C Kind of package: bulk |
на замовлення 219 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
![]() |
MMBTA06LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 12560 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
![]() |
MMBTA06LT3G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
MMBTA06WT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
MM74HC32MX | ONSEMI |
![]() Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 10ns Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Family: HC Kind of package: reel; tape Technology: CMOS Operating temperature: -40...85°C Delay time: 10ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
MM74HC32MTCX | ONSEMI |
![]() Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Family: HC Kind of package: reel; tape Technology: CMOS Operating temperature: -40...85°C Delay time: 10ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
MM74HCT74MTCX | ONSEMI |
![]() Description: IC: digital; D flip-flop; Ch: 2; IN: 4; CMOS,TTL; HCT; SMD; TSSOP14 Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 4.5...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HCT Manufacturer series: HCT Technology: CMOS; TTL Number of inputs: 4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
![]() |
MM74HC86MX | ONSEMI |
![]() Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 9ns Type of integrated circuit: digital Operating temperature: -40...85°C Case: SO14 Number of inputs: 2 Supply voltage: 2...6V DC Number of channels: quad; 4 Delay time: 9ns Kind of package: reel; tape Kind of gate: XOR Technology: CMOS Family: HC Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
MM74HC86MTCX | ONSEMI |
![]() Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; HC; 2÷6VDC; HC Type of integrated circuit: digital Operating temperature: -55...125°C Case: TSSOP14 Number of inputs: 2 Supply voltage: 2...6V DC Number of channels: 4 Kind of package: reel; tape Manufacturer series: HC Kind of gate: XOR Technology: CMOS Family: HC Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
![]() |
MM74HC132MX | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 12ns Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Kind of input: with Schmitt trigger Delay time: 12ns Family: HC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
MM74HC132MTCX | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Kind of input: with Schmitt trigger Delay time: 12ns Family: HC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
BZX79C4V7 | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 4.7V; bulk; CASE017AG; single diode; 3uA; BZX79C Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.7V Mounting: THT Tolerance: ±5% Kind of package: bulk Case: CASE017AG Semiconductor structure: single diode Manufacturer series: BZX79C Leakage current: 3µA |
на замовлення 1654 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
![]() |
MMBD1503A | ONSEMI |
![]() Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A Case: SOT23 Capacitance: 4pF Max. off-state voltage: 200V Max. forward voltage: 1.15V Load current: 0.2A Semiconductor structure: double series Max. forward impulse current: 2A Power dissipation: 0.35W Kind of package: reel; tape Type of diode: switching Mounting: SMD |
на замовлення 976 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
![]() |
BC638TA | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Formed Mounting: THT Kind of package: Ammo Pack Frequency: 50MHz Current gain: 100...250 |
на замовлення 1959 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
![]() |
MMBT2484LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 60V; 0.1A; 0.225/0.3W; SOT23,TO236AB Case: SOT23; TO236AB Collector-emitter voltage: 60V Current gain: 250...800 Collector current: 0.1A Type of transistor: NPN Power dissipation: 0.225/0.3W Polarisation: bipolar Kind of package: reel; tape Mounting: SMD |
на замовлення 2595 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
![]() |
LM317LZG | ONSEMI |
![]() Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.1A; TO92; THT Output voltage: 1.2...37V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 3...40V Kind of package: bulk Manufacturer series: LM317L Kind of voltage regulator: adjustable; linear Mounting: THT Operating temperature: 0...125°C Case: TO92 Output current: 0.1A |
на замовлення 776 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
![]() |
LM317LZRAG | ONSEMI |
![]() Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.1A; TO92; THT Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; linear Output voltage: 1.2...37V Output current: 0.1A Case: TO92 Mounting: THT Operating temperature: 0...125°C Number of channels: 1 Input voltage: 3...40V Kind of package: reel; tape Manufacturer series: LM317L |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
MUR1640CTG | ONSEMI |
![]() Description: Diode: rectifying; THT; 400V; 8Ax2; tube; Ifsm: 100A; TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 8A x2 Semiconductor structure: common cathode; double Kind of package: tube Max. forward impulse current: 100A Case: TO220AB Max. load current: 16A Heatsink thickness: 1.15...1.39mm |
на замовлення 4 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
![]() |
FSB560A | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 60V; 2A; 0.5W; SOT23,TO236AB Mounting: SMD Case: SOT23; TO236AB Kind of package: reel; tape Current gain: 250...550 Collector current: 2A Type of transistor: NPN Power dissipation: 0.5W Polarisation: bipolar Frequency: 75MHz Collector-emitter voltage: 60V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
NCP551SN33T1G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; TSOP5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.15V Output voltage: 3.3V Output current: 0.15A Case: TSOP5 Mounting: SMD Manufacturer series: NCP551 Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 4.3...12V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
![]() |
QSD2030 | ONSEMI |
![]() Description: Photodiode; 5mm; THT; 880nm; 400÷1100nm; 40°; 1.3V; convex Operating voltage: 1.3V LED diameter: 5mm Wavelength: 400...1100nm LED lens: transparent Viewing angle: 40° Type of photoelement: photodiode Wavelength of peak sensitivity: 880nm Front: convex Mounting: THT |
на замовлення 69 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
![]() |
LM258DR2G | ONSEMI |
![]() ![]() Description: IC: operational amplifier; 1MHz; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC Type of integrated circuit: operational amplifier Bandwidth: 1MHz Mounting: SMT Number of channels: 2 Case: SO8 Slew rate: 0.6V/μs Operating temperature: -25...85°C Input offset voltage: 2mV Kind of package: reel; tape Voltage supply range: ± 1.5...16V DC; 3...32V DC |
товару немає в наявності |
В кошику од. на суму грн. |
NSI45015WT1G |
![]() |
Виробник: ONSEMI
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOD123; 45VDC; 460mW
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOD123
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 45V DC
Power dissipation: 0.46W
Operating current: 15mA
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOD123; 45VDC; 460mW
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOD123
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 45V DC
Power dissipation: 0.46W
Operating current: 15mA
на замовлення 2519 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 41.86 грн |
17+ | 23.32 грн |
25+ | 19.14 грн |
78+ | 11.29 грн |
215+ | 10.69 грн |
750+ | 10.32 грн |
MURS120T3G |
![]() |
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMB; Ufmax: 875mV; Ifsm: 40A
Mounting: SMD
Case: SMB
Max. off-state voltage: 200V
Max. forward voltage: 0.875V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 40A
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMB; Ufmax: 875mV; Ifsm: 40A
Mounting: SMD
Case: SMB
Max. off-state voltage: 200V
Max. forward voltage: 0.875V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 40A
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
товару немає в наявності
В кошику
од. на суму грн.
MC74AC245DWG |
![]() |
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20; AC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: SO20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 80µA
Manufacturer series: AC
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20; AC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: SO20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 80µA
Manufacturer series: AC
на замовлення 6 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 83.72 грн |
6+ | 71.01 грн |
MJ15024G | ![]() |
![]() |
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 250W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 250W
Case: TO3
Mounting: THT
Kind of package: in-tray
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 250W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 250W
Case: TO3
Mounting: THT
Kind of package: in-tray
товару немає в наявності
В кошику
од. на суму грн.
MMBT4401LT1G |
![]() |
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
товару немає в наявності
В кошику
од. на суму грн.
FDA16N50-F109 |
![]() |
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Drain-source voltage: 500V
Drain current: 9.9A
On-state resistance: 0.38Ω
Power dissipation: 205W
Gate charge: 45nC
Technology: UniFET™
Gate-source voltage: ±30V
Pulsed drain current: 66A
Case: TO3PN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Drain-source voltage: 500V
Drain current: 9.9A
On-state resistance: 0.38Ω
Power dissipation: 205W
Gate charge: 45nC
Technology: UniFET™
Gate-source voltage: ±30V
Pulsed drain current: 66A
Case: TO3PN
товару немає в наявності
В кошику
од. на суму грн.
FDA16N50LDTU |
![]() ![]() |
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Drain-source voltage: 500V
Drain current: 3.3A
On-state resistance: 0.38Ω
Power dissipation: 205W
Gate charge: 45nC
Technology: DMOS; UniFET™
Gate-source voltage: ±30V
Pulsed drain current: 66A
Case: TO3PN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Drain-source voltage: 500V
Drain current: 3.3A
On-state resistance: 0.38Ω
Power dissipation: 205W
Gate charge: 45nC
Technology: DMOS; UniFET™
Gate-source voltage: ±30V
Pulsed drain current: 66A
Case: TO3PN
товару немає в наявності
В кошику
од. на суму грн.
FQAF16N50 |
![]() |
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.15A; 110W; TO3PF
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.15A
Power dissipation: 110W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.15A; 110W; TO3PF
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.15A
Power dissipation: 110W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
MBR0530T1G |
![]() |
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
на замовлення 14990 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
34+ | 12.08 грн |
43+ | 8.75 грн |
55+ | 6.91 грн |
100+ | 6.16 грн |
364+ | 2.43 грн |
999+ | 2.29 грн |
MBR0530T3G |
![]() |
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
на замовлення 3445 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
32+ | 12.88 грн |
68+ | 5.53 грн |
100+ | 4.45 грн |
283+ | 3.09 грн |
776+ | 2.92 грн |
MC33035DWG |
![]() |
Виробник: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; brushless motor controller; SO24; Ch: 3; Usup: 0÷40VDC
Operating temperature: -40...85°C
Type of integrated circuit: driver
Number of channels: 3
Kind of package: tube
Kind of integrated circuit: brushless motor controller
Mounting: SMD
Case: SO24
Supply voltage: 0...40V DC
Operating voltage: 10...30V DC
Category: Motor and PWM drivers
Description: IC: driver; brushless motor controller; SO24; Ch: 3; Usup: 0÷40VDC
Operating temperature: -40...85°C
Type of integrated circuit: driver
Number of channels: 3
Kind of package: tube
Kind of integrated circuit: brushless motor controller
Mounting: SMD
Case: SO24
Supply voltage: 0...40V DC
Operating voltage: 10...30V DC
на замовлення 50 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 491.86 грн |
3+ | 314.70 грн |
8+ | 297.50 грн |
FDN340P |
![]() |
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -10A; 0.5W
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -10A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -10A; 0.5W
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -10A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 3369 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 30.59 грн |
18+ | 20.93 грн |
25+ | 16.00 грн |
97+ | 9.27 грн |
267+ | 8.75 грн |
3000+ | 8.45 грн |
MOC3042M |
![]() |
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; triac; DIP6; Ch: 1; MOC304XM; 1kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Mounting: THT
Number of channels: 1
Manufacturer series: MOC304XM
Slew rate: 1kV/μs
Category: Optotriacs
Description: Optotriac; 4.17kV; triac; DIP6; Ch: 1; MOC304XM; 1kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Mounting: THT
Number of channels: 1
Manufacturer series: MOC304XM
Slew rate: 1kV/μs
на замовлення 637 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 53.94 грн |
9+ | 41.56 грн |
25+ | 36.63 грн |
30+ | 29.83 грн |
81+ | 28.18 грн |
500+ | 27.81 грн |
NUD4001DR2G | ![]() |
![]() |
Виробник: ONSEMI
Category: LED drivers
Description: IC: driver; LED driver; SO8; 500mA; 28V; Ch: 1; PWM
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Integrated circuit features: PWM
Kind of integrated circuit: LED driver
Output voltage: 28V
Output current: 0.5A
Type of integrated circuit: driver
Number of channels: 1
Category: LED drivers
Description: IC: driver; LED driver; SO8; 500mA; 28V; Ch: 1; PWM
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Integrated circuit features: PWM
Kind of integrated circuit: LED driver
Output voltage: 28V
Output current: 0.5A
Type of integrated circuit: driver
Number of channels: 1
товару немає в наявності
В кошику
од. на суму грн.
NTJD4001NT1G |
![]() |
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.18A; 0.272W
Mounting: SMD
Case: SC70-6; SC88; SOT363
Power dissipation: 0.272W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 0.18A
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET x2
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.18A; 0.272W
Mounting: SMD
Case: SC70-6; SC88; SOT363
Power dissipation: 0.272W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 0.18A
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET x2
на замовлення 2039 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 27.37 грн |
23+ | 16.44 грн |
50+ | 12.33 грн |
100+ | 10.91 грн |
117+ | 7.55 грн |
320+ | 7.10 грн |
NVTJD4001NT1G |
![]() |
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.18A; 0.272W
Mounting: SMD
Case: SC70-6; SC88; SOT363
Power dissipation: 0.272W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 0.18A
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET x2
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.18A; 0.272W
Mounting: SMD
Case: SC70-6; SC88; SOT363
Power dissipation: 0.272W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 0.18A
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET x2
на замовлення 2910 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 22.54 грн |
21+ | 18.16 грн |
24+ | 15.85 грн |
38+ | 10.02 грн |
100+ | 9.04 грн |
115+ | 7.62 грн |
315+ | 7.25 грн |
MMSZ4685T1G |
![]() |
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123; single diode
Case: SOD123
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 3.6V
Leakage current: 7.5µA
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: MMSZ4xxT1G
Mounting: SMD
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123; single diode
Case: SOD123
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 3.6V
Leakage current: 7.5µA
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: MMSZ4xxT1G
Mounting: SMD
на замовлення 3194 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
69+ | 5.90 грн |
105+ | 3.59 грн |
150+ | 2.50 грн |
250+ | 2.14 грн |
500+ | 1.49 грн |
1000+ | 1.38 грн |
3000+ | 1.35 грн |
6N138M |
![]() |
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 5kV; DIP8; 6N138M
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 300-1600%@1.6mA
Case: DIP8
Manufacturer series: 6N138M
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 5kV; DIP8; 6N138M
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 300-1600%@1.6mA
Case: DIP8
Manufacturer series: 6N138M
товару немає в наявності
В кошику
од. на суму грн.
MMBFJ201 |
![]() |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 200uA; 0.35W; SOT23; Igt: 50mA
Gate current: 50mA
Drain current: 200µA
Type of transistor: N-JFET
Power dissipation: 0.35W
Polarisation: unipolar
Kind of package: reel; tape
Gate-source voltage: -40V
Mounting: SMD
Case: SOT23
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 200uA; 0.35W; SOT23; Igt: 50mA
Gate current: 50mA
Drain current: 200µA
Type of transistor: N-JFET
Power dissipation: 0.35W
Polarisation: unipolar
Kind of package: reel; tape
Gate-source voltage: -40V
Mounting: SMD
Case: SOT23
на замовлення 1467 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 26.24 грн |
25+ | 18.54 грн |
50+ | 14.35 грн |
100+ | 10.17 грн |
108+ | 8.15 грн |
297+ | 7.70 грн |
500+ | 7.40 грн |
CAT24C04HU4I-GT3 |
![]() |
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
FQD2N90TM |
![]() |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; DPAK
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 15nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 6.8A
Mounting: SMD
Case: DPAK
Drain-source voltage: 900V
Drain current: 1.08A
On-state resistance: 7.2Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; DPAK
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 15nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 6.8A
Mounting: SMD
Case: DPAK
Drain-source voltage: 900V
Drain current: 1.08A
On-state resistance: 7.2Ω
товару немає в наявності
В кошику
од. на суму грн.
FQU2N90TU-AM002 |
![]() ![]() |
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of package: tube
Gate charge: 15nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 6.8A
Mounting: THT
Case: IPAK
Drain-source voltage: 900V
Drain current: 1.08A
On-state resistance: 7.2Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of package: tube
Gate charge: 15nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 6.8A
Mounting: THT
Case: IPAK
Drain-source voltage: 900V
Drain current: 1.08A
On-state resistance: 7.2Ω
товару немає в наявності
В кошику
од. на суму грн.
FQU2N90TU-WS |
![]() |
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of package: tube
Gate charge: 15nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 6.8A
Mounting: THT
Case: IPAK
Drain-source voltage: 900V
Drain current: 1.08A
On-state resistance: 7.2Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of package: tube
Gate charge: 15nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 6.8A
Mounting: THT
Case: IPAK
Drain-source voltage: 900V
Drain current: 1.08A
On-state resistance: 7.2Ω
товару немає в наявності
В кошику
од. на суму грн.
NCP431ACLPRAG |
![]() |
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; TO92; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...36V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; TO92; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...36V
товару немає в наявності
В кошику
од. на суму грн.
NCP431ACSNT1G |
![]() |
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: 0...70°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...36V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: 0...70°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...36V
товару немає в наявності
В кошику
од. на суму грн.
FCPF11N60 | ![]() |
![]() |
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 52nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 52nC
на замовлення 115 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 179.52 грн |
8+ | 115.12 грн |
21+ | 109.14 грн |
FCPF11N60F |
![]() |
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 7A; Idm: 33A; 36W
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 52nC
Pulsed drain current: 33A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 7A; Idm: 33A; 36W
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 52nC
Pulsed drain current: 33A
товару немає в наявності
В кошику
од. на суму грн.
FCPF11N60T |
![]() |
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 7A; Idm: 33A; 36W
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 52nC
Pulsed drain current: 33A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 7A; Idm: 33A; 36W
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 52nC
Pulsed drain current: 33A
товару немає в наявності
В кошику
од. на суму грн.
FCP22N60N |
![]() |
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 205W; TO220AB
Type of transistor: N-MOSFET
Technology: SuperMOS®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 205W
Case: TO220AB
Gate-source voltage: ±45V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 205W; TO220AB
Type of transistor: N-MOSFET
Technology: SuperMOS®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 205W
Case: TO220AB
Gate-source voltage: ±45V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
FDD6637 |
![]() |
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -35V; -55A; 57W; DPAK
Case: DPAK
Drain-source voltage: -35V
Drain current: -55A
On-state resistance: 19mΩ
Type of transistor: P-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 35nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±25V
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -35V; -55A; 57W; DPAK
Case: DPAK
Drain-source voltage: -35V
Drain current: -55A
On-state resistance: 19mΩ
Type of transistor: P-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 35nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±25V
Mounting: SMD
на замовлення 2606 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 129.60 грн |
10+ | 85.96 грн |
15+ | 62.04 грн |
39+ | 58.30 грн |
250+ | 56.81 грн |
MMBTH81 |
![]() |
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; RF; 20V; 50mA; 225mW; SOT23
Frequency: 600MHz
Collector-emitter voltage: 20V
Collector current: 50mA
Type of transistor: PNP
Power dissipation: 0.225W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: RF
Mounting: SMD
Case: SOT23
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; RF; 20V; 50mA; 225mW; SOT23
Frequency: 600MHz
Collector-emitter voltage: 20V
Collector current: 50mA
Type of transistor: PNP
Power dissipation: 0.225W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: RF
Mounting: SMD
Case: SOT23
на замовлення 2925 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 22.54 грн |
50+ | 7.62 грн |
100+ | 6.56 грн |
245+ | 3.60 грн |
674+ | 3.40 грн |
MM74HC86M |
![]() |
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: SO14
Number of inputs: 2
Supply voltage: 2...6V DC
Number of channels: quad; 4
Quiescent current: 20µA
Kind of package: tube
Kind of gate: XOR
Technology: CMOS
Family: HC
Mounting: SMD
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: SO14
Number of inputs: 2
Supply voltage: 2...6V DC
Number of channels: quad; 4
Quiescent current: 20µA
Kind of package: tube
Kind of gate: XOR
Technology: CMOS
Family: HC
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
MJH11020G |
![]() |
Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 200V; 15A; 150W; TO247-3
Case: TO247-3
Collector-emitter voltage: 200V
Collector current: 15A
Type of transistor: NPN
Power dissipation: 150W
Polarisation: bipolar
Kind of package: tube
Kind of transistor: Darlington
Mounting: THT
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 200V; 15A; 150W; TO247-3
Case: TO247-3
Collector-emitter voltage: 200V
Collector current: 15A
Type of transistor: NPN
Power dissipation: 150W
Polarisation: bipolar
Kind of package: tube
Kind of transistor: Darlington
Mounting: THT
на замовлення 1 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 408.14 грн |
MJH11021G |
![]() |
Виробник: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 250V; 15A; 150W; TO247-3
Case: TO247-3
Collector-emitter voltage: 250V
Collector current: 15A
Type of transistor: PNP
Power dissipation: 150W
Polarisation: bipolar
Kind of package: tube
Kind of transistor: Darlington
Mounting: THT
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 250V; 15A; 150W; TO247-3
Case: TO247-3
Collector-emitter voltage: 250V
Collector current: 15A
Type of transistor: PNP
Power dissipation: 150W
Polarisation: bipolar
Kind of package: tube
Kind of transistor: Darlington
Mounting: THT
на замовлення 47 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 316.36 грн |
4+ | 252.66 грн |
10+ | 238.45 грн |
30+ | 229.48 грн |
MJH11022G |
![]() |
Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 250V; 15A; 150W; TO247-3
Case: TO247-3
Collector-emitter voltage: 250V
Collector current: 15A
Type of transistor: NPN
Power dissipation: 150W
Polarisation: bipolar
Kind of package: tube
Kind of transistor: Darlington
Mounting: THT
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 250V; 15A; 150W; TO247-3
Case: TO247-3
Collector-emitter voltage: 250V
Collector current: 15A
Type of transistor: NPN
Power dissipation: 150W
Polarisation: bipolar
Kind of package: tube
Kind of transistor: Darlington
Mounting: THT
на замовлення 1 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 402.50 грн |
MJD127T4G |
![]() |
Виробник: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
на замовлення 2495 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 74.06 грн |
10+ | 45.97 грн |
36+ | 24.74 грн |
98+ | 23.40 грн |
1000+ | 22.42 грн |
BZX85C10 |
![]() |
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 10V; bulk; DO41; single diode; 0.5uA; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 10V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Leakage current: 0.5µA
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 10V; bulk; DO41; single diode; 0.5uA; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 10V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Leakage current: 0.5µA
на замовлення 877 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
36+ | 11.27 грн |
54+ | 7.03 грн |
82+ | 4.57 грн |
100+ | 3.86 грн |
292+ | 3.00 грн |
803+ | 2.83 грн |
BZX85C15 |
![]() |
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 15V; bulk; DO41; single diode; 0.5uA; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 15V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Leakage current: 0.5µA
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 15V; bulk; DO41; single diode; 0.5uA; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 15V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Leakage current: 0.5µA
на замовлення 8745 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
34+ | 12.08 грн |
45+ | 8.37 грн |
59+ | 6.43 грн |
74+ | 5.07 грн |
250+ | 2.95 грн |
347+ | 2.52 грн |
500+ | 2.42 грн |
955+ | 2.38 грн |
BZX85C16 |
![]() |
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 16V; bulk; DO41; single diode; 0.5uA; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 16V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: BZX85C
Kind of package: bulk
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 16V; bulk; DO41; single diode; 0.5uA; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 16V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: BZX85C
Kind of package: bulk
на замовлення 219 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
30+ | 13.68 грн |
40+ | 9.34 грн |
64+ | 5.88 грн |
100+ | 4.74 грн |
MMBTA06LT1G |
![]() |
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 12560 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
46+ | 8.86 грн |
68+ | 5.53 грн |
93+ | 4.05 грн |
106+ | 3.53 грн |
500+ | 2.51 грн |
546+ | 1.60 грн |
1500+ | 1.52 грн |
6000+ | 1.51 грн |
MMBTA06LT3G |
![]() |
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
товару немає в наявності
В кошику
од. на суму грн.
MMBTA06WT1G |
![]() |
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
товару немає в наявності
В кошику
од. на суму грн.
MM74HC32MX |
![]() |
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 10ns
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Technology: CMOS
Operating temperature: -40...85°C
Delay time: 10ns
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 10ns
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Technology: CMOS
Operating temperature: -40...85°C
Delay time: 10ns
товару немає в наявності
В кошику
од. на суму грн.
MM74HC32MTCX |
![]() |
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Technology: CMOS
Operating temperature: -40...85°C
Delay time: 10ns
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Technology: CMOS
Operating temperature: -40...85°C
Delay time: 10ns
товару немає в наявності
В кошику
од. на суму грн.
MM74HCT74MTCX |
![]() |
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; IN: 4; CMOS,TTL; HCT; SMD; TSSOP14
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HCT
Manufacturer series: HCT
Technology: CMOS; TTL
Number of inputs: 4
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; IN: 4; CMOS,TTL; HCT; SMD; TSSOP14
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HCT
Manufacturer series: HCT
Technology: CMOS; TTL
Number of inputs: 4
товару немає в наявності
В кошику
од. на суму грн.
MM74HC86MX |
![]() |
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 9ns
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: SO14
Number of inputs: 2
Supply voltage: 2...6V DC
Number of channels: quad; 4
Delay time: 9ns
Kind of package: reel; tape
Kind of gate: XOR
Technology: CMOS
Family: HC
Mounting: SMD
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 9ns
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: SO14
Number of inputs: 2
Supply voltage: 2...6V DC
Number of channels: quad; 4
Delay time: 9ns
Kind of package: reel; tape
Kind of gate: XOR
Technology: CMOS
Family: HC
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
MM74HC86MTCX |
![]() |
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; HC; 2÷6VDC; HC
Type of integrated circuit: digital
Operating temperature: -55...125°C
Case: TSSOP14
Number of inputs: 2
Supply voltage: 2...6V DC
Number of channels: 4
Kind of package: reel; tape
Manufacturer series: HC
Kind of gate: XOR
Technology: CMOS
Family: HC
Mounting: SMD
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; HC; 2÷6VDC; HC
Type of integrated circuit: digital
Operating temperature: -55...125°C
Case: TSSOP14
Number of inputs: 2
Supply voltage: 2...6V DC
Number of channels: 4
Kind of package: reel; tape
Manufacturer series: HC
Kind of gate: XOR
Technology: CMOS
Family: HC
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
MM74HC132MX |
![]() |
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 12ns
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Delay time: 12ns
Family: HC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 12ns
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Delay time: 12ns
Family: HC
товару немає в наявності
В кошику
од. на суму грн.
MM74HC132MTCX |
![]() |
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Delay time: 12ns
Family: HC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Delay time: 12ns
Family: HC
товару немає в наявності
В кошику
од. на суму грн.
BZX79C4V7 |
![]() |
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; bulk; CASE017AG; single diode; 3uA; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Mounting: THT
Tolerance: ±5%
Kind of package: bulk
Case: CASE017AG
Semiconductor structure: single diode
Manufacturer series: BZX79C
Leakage current: 3µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; bulk; CASE017AG; single diode; 3uA; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Mounting: THT
Tolerance: ±5%
Kind of package: bulk
Case: CASE017AG
Semiconductor structure: single diode
Manufacturer series: BZX79C
Leakage current: 3µA
на замовлення 1654 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 10.46 грн |
58+ | 6.50 грн |
100+ | 3.77 грн |
129+ | 2.92 грн |
250+ | 2.09 грн |
425+ | 2.06 грн |
500+ | 1.94 грн |
MMBD1503A |
![]() |
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A
Case: SOT23
Capacitance: 4pF
Max. off-state voltage: 200V
Max. forward voltage: 1.15V
Load current: 0.2A
Semiconductor structure: double series
Max. forward impulse current: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Mounting: SMD
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A
Case: SOT23
Capacitance: 4pF
Max. off-state voltage: 200V
Max. forward voltage: 1.15V
Load current: 0.2A
Semiconductor structure: double series
Max. forward impulse current: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Mounting: SMD
на замовлення 976 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
27+ | 15.30 грн |
44+ | 8.60 грн |
55+ | 6.82 грн |
100+ | 6.13 грн |
206+ | 4.30 грн |
565+ | 4.06 грн |
BC638TA |
![]() |
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Current gain: 100...250
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Current gain: 100...250
на замовлення 1959 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 22.54 грн |
30+ | 12.63 грн |
100+ | 8.07 грн |
194+ | 4.52 грн |
532+ | 4.28 грн |
MMBT2484LT1G |
![]() |
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Case: SOT23; TO236AB
Collector-emitter voltage: 60V
Current gain: 250...800
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.225/0.3W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Case: SOT23; TO236AB
Collector-emitter voltage: 60V
Current gain: 250...800
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.225/0.3W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
на замовлення 2595 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
32+ | 12.88 грн |
52+ | 7.33 грн |
75+ | 5.02 грн |
100+ | 4.27 грн |
442+ | 1.97 грн |
1214+ | 1.87 грн |
LM317LZG |
![]() |
Виробник: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.1A; TO92; THT
Output voltage: 1.2...37V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 3...40V
Kind of package: bulk
Manufacturer series: LM317L
Kind of voltage regulator: adjustable; linear
Mounting: THT
Operating temperature: 0...125°C
Case: TO92
Output current: 0.1A
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.1A; TO92; THT
Output voltage: 1.2...37V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 3...40V
Kind of package: bulk
Manufacturer series: LM317L
Kind of voltage regulator: adjustable; linear
Mounting: THT
Operating temperature: 0...125°C
Case: TO92
Output current: 0.1A
на замовлення 776 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 41.86 грн |
22+ | 17.34 грн |
50+ | 14.50 грн |
72+ | 12.33 грн |
197+ | 11.66 грн |
300+ | 11.59 грн |
500+ | 11.21 грн |
LM317LZRAG |
![]() |
Виробник: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.1A; TO92; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 0.1A
Case: TO92
Mounting: THT
Operating temperature: 0...125°C
Number of channels: 1
Input voltage: 3...40V
Kind of package: reel; tape
Manufacturer series: LM317L
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.1A; TO92; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 0.1A
Case: TO92
Mounting: THT
Operating temperature: 0...125°C
Number of channels: 1
Input voltage: 3...40V
Kind of package: reel; tape
Manufacturer series: LM317L
товару немає в наявності
В кошику
од. на суму грн.
MUR1640CTG |
![]() |
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; tube; Ifsm: 100A; TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AB
Max. load current: 16A
Heatsink thickness: 1.15...1.39mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; tube; Ifsm: 100A; TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AB
Max. load current: 16A
Heatsink thickness: 1.15...1.39mm
на замовлення 4 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 132.82 грн |
FSB560A |
![]() |
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 2A; 0.5W; SOT23,TO236AB
Mounting: SMD
Case: SOT23; TO236AB
Kind of package: reel; tape
Current gain: 250...550
Collector current: 2A
Type of transistor: NPN
Power dissipation: 0.5W
Polarisation: bipolar
Frequency: 75MHz
Collector-emitter voltage: 60V
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 2A; 0.5W; SOT23,TO236AB
Mounting: SMD
Case: SOT23; TO236AB
Kind of package: reel; tape
Current gain: 250...550
Collector current: 2A
Type of transistor: NPN
Power dissipation: 0.5W
Polarisation: bipolar
Frequency: 75MHz
Collector-emitter voltage: 60V
товару немає в наявності
В кошику
од. на суму грн.
NCP551SN33T1G |
![]() |
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.15V
Output voltage: 3.3V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP551
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.3...12V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.15V
Output voltage: 3.3V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP551
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.3...12V
товару немає в наявності
В кошику
од. на суму грн.
QSD2030 |
![]() |
Виробник: ONSEMI
Category: Photodiodes
Description: Photodiode; 5mm; THT; 880nm; 400÷1100nm; 40°; 1.3V; convex
Operating voltage: 1.3V
LED diameter: 5mm
Wavelength: 400...1100nm
LED lens: transparent
Viewing angle: 40°
Type of photoelement: photodiode
Wavelength of peak sensitivity: 880nm
Front: convex
Mounting: THT
Category: Photodiodes
Description: Photodiode; 5mm; THT; 880nm; 400÷1100nm; 40°; 1.3V; convex
Operating voltage: 1.3V
LED diameter: 5mm
Wavelength: 400...1100nm
LED lens: transparent
Viewing angle: 40°
Type of photoelement: photodiode
Wavelength of peak sensitivity: 880nm
Front: convex
Mounting: THT
на замовлення 69 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 53.13 грн |
13+ | 30.80 грн |
49+ | 18.09 грн |
LM258DR2G | ![]() |
![]() |
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 0.6V/μs
Operating temperature: -25...85°C
Input offset voltage: 2mV
Kind of package: reel; tape
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 0.6V/μs
Operating temperature: -25...85°C
Input offset voltage: 2mV
Kind of package: reel; tape
Voltage supply range: ± 1.5...16V DC; 3...32V DC
товару немає в наявності
В кошику
од. на суму грн.