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FQPF22N30 FQPF22N30 ONSEMI fqpf22n30-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 7.6A; Idm: 48A; 56W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 7.6A
Pulsed drain current: 48A
Power dissipation: 56W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
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FQPF27N25 FQPF27N25 ONSEMI fqpf27n25-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.9A; Idm: 56A; 55W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.9A
Pulsed drain current: 56A
Power dissipation: 55W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
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FQPF2N80YDTU FQPF2N80YDTU ONSEMI fqpf2n80ydtu-d.pdf FAIRS45220-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 950mA; Idm: 6A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.95A
Pulsed drain current: 6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 6.3Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
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FQPF32N20C FQPF32N20C ONSEMI fqpf32n20c-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17.8A; Idm: 112A; 50W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 17.8A
Pulsed drain current: 112A
Power dissipation: 50W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
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MMBZ5233BLT1G MMBZ5233BLT1G ONSEMI MMBZ52xxBLT1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6V; SMD; SOT23; reel,tape; single diode
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6V
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMBZ52xxBLT1G
на замовлення 5794 шт:
термін постачання 14-30 дні (днів)
63+7.29 грн
90+4.74 грн
105+4.06 грн
200+2.12 грн
500+1.46 грн
1000+1.27 грн
3000+1.17 грн
Мінімальне замовлення: 63
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KSC5026MOS KSC5026MOS ONSEMI KSC5026M.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 800V; 1.5A; 20W; TO126ISO
Mounting: THT
Case: TO126ISO
Type of transistor: NPN
Collector current: 1.5A
Pulsed collector current: 5A
Power dissipation: 20W
Current gain: 20...40
Collector-emitter voltage: 800V
Frequency: 15MHz
Polarisation: bipolar
Kind of package: bulk
на замовлення 1977 шт:
термін постачання 14-30 дні (днів)
5+92.99 грн
10+54.94 грн
100+36.82 грн
500+33.69 грн
Мінімальне замовлення: 5
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FQD16N25CTM FQD16N25CTM ONSEMI FQD16N25C.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10.1A; 160W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Power dissipation: 160W
Case: DPAK
Mounting: SMD
Gate charge: 53.5nC
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 250V
On-state resistance: 0.27Ω
Kind of channel: enhancement
Drain current: 10.1A
Gate-source voltage: ±30V
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FQP16N25 FQP16N25 ONSEMI fqp16n25-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10A; Idm: 64A; 142W; TO220AB
Type of transistor: N-MOSFET
Power dissipation: 142W
Case: TO220AB
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Pulsed drain current: 64A
Polarisation: unipolar
Drain-source voltage: 250V
On-state resistance: 0.23Ω
Kind of channel: enhancement
Drain current: 10A
Gate-source voltage: ±30V
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LM2903VDR2G ONSEMI lm393-d.pdf description Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Operating voltage: 2...36V
Mounting: SMT
Case: SO8
Operating temperature: -40...125°C
Input offset voltage: 7mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 20nA
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QRD1114 QRD1114 ONSEMI QRD1114.PDF description Category: PCB Photoelectric Sensors
Description: Sensor: photoelectric; diffuse-reflective; NPN; Usup: 5VDC; PCB
Type of sensor: photoelectric
Operation mode: diffuse-reflective
Output configuration: NPN
Supply voltage: 5V DC
Mounting: PCB
Body dimensions: 4.39x6.1x4.65mm
Operating temperature: -40...85°C
на замовлення 65 шт:
термін постачання 14-30 дні (днів)
5+95.66 грн
10+94.81 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
NCV2931CDR2G ONSEMI lm2931-d.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.7÷29.5V; 0.1A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 2.7...29.5V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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NCV7327MW0R2G ONSEMI ncv7327-d.pdf Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5÷18VDC; LIN; SMD; DFNW8; reel,tape
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Application: automotive industry
Interface: LIN
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5...18V DC
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NCV7357MW0R2G ONSEMI ncv7357-d.pdf Category: Interfaces others - integrated circuits
Description: IC: CAN transceiver; 4.75÷5.25VDC; CAN FD; SMD; DFNW8; Ch: 1
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Application: automotive industry
Interface: CAN FD
Type of integrated circuit: CAN transceiver
Number of channels: 1
Supply voltage: 4.75...5.25V DC
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NCV7357MW3R2G ONSEMI ncv7357-d.pdf Category: Interfaces others - integrated circuits
Description: IC: CAN transceiver; 4.75÷5.25VDC; CAN FD; SMD; DFNW8; Ch: 1
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Application: automotive industry
Interface: CAN FD
Type of integrated circuit: CAN transceiver
Number of channels: 1
Supply voltage: 4.75...5.25V DC
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NCV8164AML300TCG ONSEMI ncv8164-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; DFNW8; SMD; Ch: 1
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.3A
Number of channels: 1
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NCV8165ML330TBG ONSEMI ncv8165-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DFNW8; SMD
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.5A
Number of channels: 1
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NCV8187AMLE330TCG ONSEMI ncv8187-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1.2A; DFNW8; SMD
Case: DFNW8
Kind of voltage regulator: fixed; LDO; linear
Kind of package: reel; tape
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 1.2A
Number of channels: 1
Output voltage: 3.3V
Application: automotive industry
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NCV8705ML33TCG ONSEMI ncv8705-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DFNW8; SMD
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.5A
Number of channels: 1
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FDWS86068-F085 ONSEMI fdws86068-f085-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 214W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 214W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDWS86369-F085 ONSEMI fdws86369_f085-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 65A; 107W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 65A
Power dissipation: 107W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDWS86380-F085 ONSEMI fdws86380_f085-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 50A; 75W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 50A
Power dissipation: 75W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 13.4mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
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NCV8164AML120TCG ONSEMI ncv8164-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.3A; DFNW8; SMD
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.2V
Output current: 0.3A
Number of channels: 1
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NCV8164AML150TCG ONSEMI ncv8164-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.3A; DFNW8; SMD
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.5V
Output current: 0.3A
Number of channels: 1
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NCV8164AML180TCG ONSEMI ncv8164-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; DFNW8; SMD
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.8V
Output current: 0.3A
Number of channels: 1
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NCV8164AML250TCG ONSEMI ncv8164-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; DFNW8; SMD
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 2.5V
Output current: 0.3A
Number of channels: 1
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NCV8164AML330TCG ONSEMI ncv8164-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; DFNW8; SMD
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.3A
Number of channels: 1
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NCV8164AMLADJTCG ONSEMI ncv8164-d.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; -0.3÷6.3V; 0.3A
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: -0.3...6.3V
Output current: 0.3A
Number of channels: 1
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NCV8165ML330TCG ONSEMI NCV8165-D.PDF ncv8165-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DFNW8; SMD
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.5A
Number of channels: 1
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NCV8187AMLE180TCG ONSEMI ncv8187-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1.2A; DFNW8; SMD
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.8V
Output current: 1.2A
Number of channels: 1
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NCV8187AMLE280TCG ONSEMI ncv8187-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 1.2A; DFNW8; SMD
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 2.8V
Output current: 1.2A
Number of channels: 1
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NCV8187AMLEADJTCG ONSEMI ncv8187-d.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷5.2V; 1.2A
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 0.8...5.2V
Output current: 1.2A
Number of channels: 1
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FDMT800100DC ONSEMI fdmt800100dc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 102A; Idm: 989A; 156W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 102A
Pulsed drain current: 989A
Power dissipation: 156W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 5.39mΩ
Mounting: SMD
Gate charge: 111nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMT800120DC ONSEMI fdmt800120dc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 81A; Idm: 767A; 156W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 81A
Pulsed drain current: 767A
Power dissipation: 156W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 107nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMT800150DC ONSEMI fdmt800150dc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 62A; Idm: 561A; 156W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 62A
Pulsed drain current: 561A
Power dissipation: 156W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMT800152DC ONSEMI fdmt800152dc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 45A; Idm: 413A; 113W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 45A
Pulsed drain current: 413A
Power dissipation: 113W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 83nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMT80040DC ONSEMI fdmt80040dc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 265A; Idm: 2644A; 156W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 265A
Pulsed drain current: 2644A
Power dissipation: 156W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 0.9mΩ
Mounting: SMD
Gate charge: 338nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMT80080DC ONSEMI fdmt80080dc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 160A; Idm: 1453A; 156W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 160A
Pulsed drain current: 1453A
Power dissipation: 156W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 2.22mΩ
Mounting: SMD
Gate charge: 273nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTMTS002N08MC ONSEMI ntmts002n08mc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 229A; Idm: 3577A; 208W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 229A
Pulsed drain current: 3577A
Power dissipation: 208W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 89nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTMTS1D2N08H ONSEMI ntmts1d2n08h-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 335A; Idm: 900A; 150W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 335A
Pulsed drain current: 900A
Power dissipation: 150W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Gate charge: 147nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTMTS1D5N08H ONSEMI ntmts1d5n08h-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 255A; Idm: 900A; 83W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 255A
Pulsed drain current: 900A
Power dissipation: 83W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 125nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTMTS1D6N10MCTXG ONSEMI ntmts1d6n10mc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 273A; Idm: 900A; 146W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 273A
Pulsed drain current: 900A
Power dissipation: 146W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTMTS4D3N15MC ONSEMI ntmts4d3n15mc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 174A; Idm: 900A; 293W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 174A
Pulsed drain current: 900A
Power dissipation: 293W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 4.45mΩ
Mounting: SMD
Gate charge: 79nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTMTSC1D5N08MC ONSEMI ntmtsc1d5n08mc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 287A; Idm: 3500A; 250W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 287A
Pulsed drain current: 3500A
Power dissipation: 250W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 1.56mΩ
Mounting: SMD
Gate charge: 101nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMTS001N06CTXG ONSEMI nvmts001n06c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 376A; Idm: 900A; 122W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 376A
Pulsed drain current: 900A
Power dissipation: 122W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 910µΩ
Mounting: SMD
Gate charge: 113nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMTS0D7N04CLTXG ONSEMI nvmts0d7n04cl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 433A; Idm: 900A; 103W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 433A
Pulsed drain current: 900A
Power dissipation: 103W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 630µΩ
Mounting: SMD
Gate charge: 99nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMTS0D7N04CTXG ONSEMI nvmts0d7n04c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 420A; Idm: 900A; 103W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 420A
Pulsed drain current: 900A
Power dissipation: 103W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 670µΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMTS1D5N08H ONSEMI nvmts1d5n08h-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 273A; Idm: 900A; 129W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 273A
Pulsed drain current: 900A
Power dissipation: 129W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 125nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMTS1D6N10MCTXG ONSEMI nvmts1d6n10mc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 273A; Idm: 900A; 146W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 273A
Pulsed drain current: 900A
Power dissipation: 146W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhancement
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MUN2112T1G ONSEMI dta124e-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 338mW; SC59; R1: 22kΩ
Polarisation: bipolar
Kind of transistor: BRT
Case: SC59
Mounting: SMD
Type of transistor: PNP
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 338mW
Collector-emitter voltage: 50V
Current gain: 60...100
Quantity in set/package: 3000pcs.
Base-emitter resistor: 22kΩ
Base resistor: 22kΩ
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MUN5112T1G ONSEMI dta124e-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 310mW; SC70,SOT323
Polarisation: bipolar
Kind of transistor: BRT
Case: SC70; SOT323
Mounting: SMD
Type of transistor: PNP
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.31W
Collector-emitter voltage: 50V
Current gain: 60...100
Quantity in set/package: 3000pcs.
Base-emitter resistor: 22kΩ
Base resistor: 22kΩ
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SMUN5112T1G SMUN5112T1G ONSEMI dta124e-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
Case: SC70; SOT323
Mounting: SMD
Type of transistor: PNP
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.31W
Collector-emitter voltage: 50V
Base-emitter resistor: 22kΩ
Base resistor: 22kΩ
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FNB41060B2 ONSEMI fnb41060-d.pdf Category: Power switches - integrated circuits
Description: IC: driver; 10A; Uoper: 600V; Uinsul: 2kV; 32W
Type of integrated circuit: driver
Output current: 10A
DC supply current: 3.65mA
Mounting: THT
Operating temperature: -40...150°C
Operating voltage: 600V
Insulation voltage: 2kV
Power dissipation: 32W
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BZX84C11LT1G BZX84C11LT1G ONSEMI BZX84B_BZX84C.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 11V; SMD; SOT23; reel,tape; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84C
на замовлення 499 шт:
термін постачання 14-30 дні (днів)
72+6.38 грн
100+4.23 грн
117+3.64 грн
212+2.00 грн
264+1.61 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
SZBZX84C11ET1G ONSEMI BZX84CxxET1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 11V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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SZBZX84C11LT1G ONSEMI BZX84B_BZX84C.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 11V; SMD; SOT23; reel,tape; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84C
Application: automotive industry
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MC10ELT20DG MC10ELT20DG ONSEMI MC10ELT20DG.pdf Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 1; SMD; SO8; tube
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator
Number of channels: 1
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 1
Number of outputs: 2
Manufacturer series: 10ELT
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MC10ELT25DG MC10ELT25DG ONSEMI MC10ELT25DG.pdf Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
Number of channels: 1
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 2
Number of outputs: 1
Manufacturer series: 10ELT
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MC10EPT20DTG MC10EPT20DTG ONSEMI MC100EPT20DG.pdf Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 1; SMD; TSSOP8
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator
Number of channels: 1
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 1
Number of outputs: 2
Manufacturer series: 10EPT
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MC10EP016FAG ONSEMI mc10ep016-d.pdf Category: Counters/dividers
Description: IC: digital; binary counter,up counter; IN: 8; ECL; SMD; -40÷70°C
Type of integrated circuit: digital
Kind of integrated circuit: binary counter; up counter
Mounting: SMD
Operating temperature: -40...70°C
Number of inputs: 8
Number of outputs: 8
Technology: ECL
Trigger: positive-edge-triggered
Supply voltage: 3...3.6V
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MC10EL01DG ONSEMI mc10el01-d.pdf Category: Gates, inverters
Description: IC: digital; NOR,OR; Ch: 1; IN: 4; ECL; SMD; SOIC8; -40÷85°C; OUT: 2
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Number of inputs: 4
Number of outputs: 2
Kind of gate: NOR; OR
Technology: ECL
Supply voltage: 4.2...5.7V
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FQPF22N30 fqpf22n30-d.pdf
FQPF22N30
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 7.6A; Idm: 48A; 56W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 7.6A
Pulsed drain current: 48A
Power dissipation: 56W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
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FQPF27N25 fqpf27n25-d.pdf
FQPF27N25
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.9A; Idm: 56A; 55W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.9A
Pulsed drain current: 56A
Power dissipation: 55W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
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FQPF2N80YDTU fqpf2n80ydtu-d.pdf FAIRS45220-1.pdf?t.download=true&u=5oefqw
FQPF2N80YDTU
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 950mA; Idm: 6A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.95A
Pulsed drain current: 6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 6.3Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
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FQPF32N20C fqpf32n20c-d.pdf
FQPF32N20C
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17.8A; Idm: 112A; 50W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 17.8A
Pulsed drain current: 112A
Power dissipation: 50W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
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MMBZ5233BLT1G MMBZ52xxBLT1G.PDF
MMBZ5233BLT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6V; SMD; SOT23; reel,tape; single diode
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6V
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMBZ52xxBLT1G
на замовлення 5794 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
63+7.29 грн
90+4.74 грн
105+4.06 грн
200+2.12 грн
500+1.46 грн
1000+1.27 грн
3000+1.17 грн
Мінімальне замовлення: 63
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KSC5026MOS KSC5026M.pdf
KSC5026MOS
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 800V; 1.5A; 20W; TO126ISO
Mounting: THT
Case: TO126ISO
Type of transistor: NPN
Collector current: 1.5A
Pulsed collector current: 5A
Power dissipation: 20W
Current gain: 20...40
Collector-emitter voltage: 800V
Frequency: 15MHz
Polarisation: bipolar
Kind of package: bulk
на замовлення 1977 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
5+92.99 грн
10+54.94 грн
100+36.82 грн
500+33.69 грн
Мінімальне замовлення: 5
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FQD16N25CTM FQD16N25C.pdf
FQD16N25CTM
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10.1A; 160W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Power dissipation: 160W
Case: DPAK
Mounting: SMD
Gate charge: 53.5nC
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 250V
On-state resistance: 0.27Ω
Kind of channel: enhancement
Drain current: 10.1A
Gate-source voltage: ±30V
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FQP16N25 fqp16n25-d.pdf
FQP16N25
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10A; Idm: 64A; 142W; TO220AB
Type of transistor: N-MOSFET
Power dissipation: 142W
Case: TO220AB
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Pulsed drain current: 64A
Polarisation: unipolar
Drain-source voltage: 250V
On-state resistance: 0.23Ω
Kind of channel: enhancement
Drain current: 10A
Gate-source voltage: ±30V
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LM2903VDR2G description lm393-d.pdf
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Operating voltage: 2...36V
Mounting: SMT
Case: SO8
Operating temperature: -40...125°C
Input offset voltage: 7mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 20nA
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QRD1114 description QRD1114.PDF
QRD1114
Виробник: ONSEMI
Category: PCB Photoelectric Sensors
Description: Sensor: photoelectric; diffuse-reflective; NPN; Usup: 5VDC; PCB
Type of sensor: photoelectric
Operation mode: diffuse-reflective
Output configuration: NPN
Supply voltage: 5V DC
Mounting: PCB
Body dimensions: 4.39x6.1x4.65mm
Operating temperature: -40...85°C
на замовлення 65 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
5+95.66 грн
10+94.81 грн
Мінімальне замовлення: 5
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NCV2931CDR2G lm2931-d.pdf
Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.7÷29.5V; 0.1A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 2.7...29.5V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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NCV7327MW0R2G ncv7327-d.pdf
Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5÷18VDC; LIN; SMD; DFNW8; reel,tape
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Application: automotive industry
Interface: LIN
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5...18V DC
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NCV7357MW0R2G ncv7357-d.pdf
Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: CAN transceiver; 4.75÷5.25VDC; CAN FD; SMD; DFNW8; Ch: 1
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Application: automotive industry
Interface: CAN FD
Type of integrated circuit: CAN transceiver
Number of channels: 1
Supply voltage: 4.75...5.25V DC
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NCV7357MW3R2G ncv7357-d.pdf
Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: CAN transceiver; 4.75÷5.25VDC; CAN FD; SMD; DFNW8; Ch: 1
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Application: automotive industry
Interface: CAN FD
Type of integrated circuit: CAN transceiver
Number of channels: 1
Supply voltage: 4.75...5.25V DC
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NCV8164AML300TCG ncv8164-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; DFNW8; SMD; Ch: 1
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.3A
Number of channels: 1
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NCV8165ML330TBG ncv8165-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DFNW8; SMD
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.5A
Number of channels: 1
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NCV8187AMLE330TCG ncv8187-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1.2A; DFNW8; SMD
Case: DFNW8
Kind of voltage regulator: fixed; LDO; linear
Kind of package: reel; tape
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 1.2A
Number of channels: 1
Output voltage: 3.3V
Application: automotive industry
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NCV8705ML33TCG ncv8705-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DFNW8; SMD
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.5A
Number of channels: 1
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FDWS86068-F085 fdws86068-f085-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 214W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 214W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDWS86369-F085 fdws86369_f085-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 65A; 107W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 65A
Power dissipation: 107W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDWS86380-F085 fdws86380_f085-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 50A; 75W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 50A
Power dissipation: 75W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 13.4mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
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NCV8164AML120TCG ncv8164-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.3A; DFNW8; SMD
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.2V
Output current: 0.3A
Number of channels: 1
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NCV8164AML150TCG ncv8164-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.3A; DFNW8; SMD
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.5V
Output current: 0.3A
Number of channels: 1
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NCV8164AML180TCG ncv8164-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; DFNW8; SMD
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.8V
Output current: 0.3A
Number of channels: 1
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NCV8164AML250TCG ncv8164-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; DFNW8; SMD
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 2.5V
Output current: 0.3A
Number of channels: 1
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NCV8164AML330TCG ncv8164-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; DFNW8; SMD
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.3A
Number of channels: 1
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NCV8164AMLADJTCG ncv8164-d.pdf
Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; -0.3÷6.3V; 0.3A
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: -0.3...6.3V
Output current: 0.3A
Number of channels: 1
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NCV8165ML330TCG NCV8165-D.PDF ncv8165-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DFNW8; SMD
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.5A
Number of channels: 1
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NCV8187AMLE180TCG ncv8187-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1.2A; DFNW8; SMD
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.8V
Output current: 1.2A
Number of channels: 1
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NCV8187AMLE280TCG ncv8187-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 1.2A; DFNW8; SMD
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 2.8V
Output current: 1.2A
Number of channels: 1
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NCV8187AMLEADJTCG ncv8187-d.pdf
Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷5.2V; 1.2A
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 0.8...5.2V
Output current: 1.2A
Number of channels: 1
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FDMT800100DC fdmt800100dc-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 102A; Idm: 989A; 156W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 102A
Pulsed drain current: 989A
Power dissipation: 156W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 5.39mΩ
Mounting: SMD
Gate charge: 111nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMT800120DC fdmt800120dc-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 81A; Idm: 767A; 156W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 81A
Pulsed drain current: 767A
Power dissipation: 156W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 107nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMT800150DC fdmt800150dc-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 62A; Idm: 561A; 156W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 62A
Pulsed drain current: 561A
Power dissipation: 156W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMT800152DC fdmt800152dc-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 45A; Idm: 413A; 113W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 45A
Pulsed drain current: 413A
Power dissipation: 113W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 83nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMT80040DC fdmt80040dc-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 265A; Idm: 2644A; 156W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 265A
Pulsed drain current: 2644A
Power dissipation: 156W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 0.9mΩ
Mounting: SMD
Gate charge: 338nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMT80080DC fdmt80080dc-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 160A; Idm: 1453A; 156W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 160A
Pulsed drain current: 1453A
Power dissipation: 156W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 2.22mΩ
Mounting: SMD
Gate charge: 273nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTMTS002N08MC ntmts002n08mc-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 229A; Idm: 3577A; 208W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 229A
Pulsed drain current: 3577A
Power dissipation: 208W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 89nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTMTS1D2N08H ntmts1d2n08h-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 335A; Idm: 900A; 150W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 335A
Pulsed drain current: 900A
Power dissipation: 150W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Gate charge: 147nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTMTS1D5N08H ntmts1d5n08h-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 255A; Idm: 900A; 83W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 255A
Pulsed drain current: 900A
Power dissipation: 83W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 125nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTMTS1D6N10MCTXG ntmts1d6n10mc-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 273A; Idm: 900A; 146W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 273A
Pulsed drain current: 900A
Power dissipation: 146W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTMTS4D3N15MC ntmts4d3n15mc-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 174A; Idm: 900A; 293W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 174A
Pulsed drain current: 900A
Power dissipation: 293W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 4.45mΩ
Mounting: SMD
Gate charge: 79nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTMTSC1D5N08MC ntmtsc1d5n08mc-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 287A; Idm: 3500A; 250W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 287A
Pulsed drain current: 3500A
Power dissipation: 250W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 1.56mΩ
Mounting: SMD
Gate charge: 101nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMTS001N06CTXG nvmts001n06c-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 376A; Idm: 900A; 122W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 376A
Pulsed drain current: 900A
Power dissipation: 122W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 910µΩ
Mounting: SMD
Gate charge: 113nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMTS0D7N04CLTXG nvmts0d7n04cl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 433A; Idm: 900A; 103W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 433A
Pulsed drain current: 900A
Power dissipation: 103W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 630µΩ
Mounting: SMD
Gate charge: 99nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMTS0D7N04CTXG nvmts0d7n04c-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 420A; Idm: 900A; 103W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 420A
Pulsed drain current: 900A
Power dissipation: 103W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 670µΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMTS1D5N08H nvmts1d5n08h-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 273A; Idm: 900A; 129W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 273A
Pulsed drain current: 900A
Power dissipation: 129W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 125nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMTS1D6N10MCTXG nvmts1d6n10mc-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 273A; Idm: 900A; 146W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 273A
Pulsed drain current: 900A
Power dissipation: 146W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhancement
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MUN2112T1G dta124e-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 338mW; SC59; R1: 22kΩ
Polarisation: bipolar
Kind of transistor: BRT
Case: SC59
Mounting: SMD
Type of transistor: PNP
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 338mW
Collector-emitter voltage: 50V
Current gain: 60...100
Quantity in set/package: 3000pcs.
Base-emitter resistor: 22kΩ
Base resistor: 22kΩ
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MUN5112T1G dta124e-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 310mW; SC70,SOT323
Polarisation: bipolar
Kind of transistor: BRT
Case: SC70; SOT323
Mounting: SMD
Type of transistor: PNP
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.31W
Collector-emitter voltage: 50V
Current gain: 60...100
Quantity in set/package: 3000pcs.
Base-emitter resistor: 22kΩ
Base resistor: 22kΩ
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SMUN5112T1G dta124e-d.pdf
SMUN5112T1G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
Case: SC70; SOT323
Mounting: SMD
Type of transistor: PNP
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.31W
Collector-emitter voltage: 50V
Base-emitter resistor: 22kΩ
Base resistor: 22kΩ
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FNB41060B2 fnb41060-d.pdf
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: driver; 10A; Uoper: 600V; Uinsul: 2kV; 32W
Type of integrated circuit: driver
Output current: 10A
DC supply current: 3.65mA
Mounting: THT
Operating temperature: -40...150°C
Operating voltage: 600V
Insulation voltage: 2kV
Power dissipation: 32W
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BZX84C11LT1G BZX84B_BZX84C.PDF
BZX84C11LT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 11V; SMD; SOT23; reel,tape; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84C
на замовлення 499 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
72+6.38 грн
100+4.23 грн
117+3.64 грн
212+2.00 грн
264+1.61 грн
Мінімальне замовлення: 72
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SZBZX84C11ET1G BZX84CxxET1G.PDF
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 11V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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SZBZX84C11LT1G BZX84B_BZX84C.PDF
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 11V; SMD; SOT23; reel,tape; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84C
Application: automotive industry
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MC10ELT20DG MC10ELT20DG.pdf
MC10ELT20DG
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 1; SMD; SO8; tube
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator
Number of channels: 1
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 1
Number of outputs: 2
Manufacturer series: 10ELT
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MC10ELT25DG MC10ELT25DG.pdf
MC10ELT25DG
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
Number of channels: 1
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 2
Number of outputs: 1
Manufacturer series: 10ELT
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MC10EPT20DTG MC100EPT20DG.pdf
MC10EPT20DTG
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 1; SMD; TSSOP8
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator
Number of channels: 1
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 1
Number of outputs: 2
Manufacturer series: 10EPT
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MC10EP016FAG mc10ep016-d.pdf
Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; binary counter,up counter; IN: 8; ECL; SMD; -40÷70°C
Type of integrated circuit: digital
Kind of integrated circuit: binary counter; up counter
Mounting: SMD
Operating temperature: -40...70°C
Number of inputs: 8
Number of outputs: 8
Technology: ECL
Trigger: positive-edge-triggered
Supply voltage: 3...3.6V
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MC10EL01DG mc10el01-d.pdf
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR,OR; Ch: 1; IN: 4; ECL; SMD; SOIC8; -40÷85°C; OUT: 2
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Number of inputs: 4
Number of outputs: 2
Kind of gate: NOR; OR
Technology: ECL
Supply voltage: 4.2...5.7V
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