| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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MMBZ5257BLT1G | ONSEMI |
 Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 33V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Semiconductor structure: single diode Mounting: SMD Case: SOT23 Tolerance: ±5% Kind of package: reel; tape Manufacturer series: MMBZ52xxBLT1G Power dissipation: 0.3W Zener voltage: 33V |
на замовлення 35363 шт: термін постачання 14-30 дні (днів) |
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| SZMMBZ5257BLT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 33V; SMD; SOT23; reel,tape; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 33V Mounting: SMD Tolerance: ±5% Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MMBZ52xxBLT1G Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSVDTA123EM3T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Current gain: 8...15 Application: automotive industry Quantity in set/package: 8000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NCV7321D12R2G | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; transceiver; 5÷27VDC; LIN; SMD; SOIC8; reel,tape Type of integrated circuit: interface Kind of integrated circuit: transceiver Supply voltage: 5...27V DC Interface: LIN Mounting: SMD Case: SOIC8 Operating temperature: -40...125°C Kind of package: reel; tape Application: automotive industry |
на замовлення 2977 шт: термін постачання 14-30 дні (днів) |
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MMSZ47T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 47V; SMD; SOD123; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 47V Mounting: SMD Tolerance: ±5% Case: SOD123 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MMSZxxTxG |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| N24S64C4DYT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; WLCSP4 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 64kb EEPROM Interface: I2C Memory organisation: 8kx8bit Operating voltage: 1.7...5.5V Clock frequency: 1MHz Mounting: SMD Case: WLCSP4 Kind of interface: serial Operating temperature: -40...85°C Access time: 3.5µs Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||||||
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SMF12CT1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 13.3÷15V; 6A; 100W; common anode; ESD; SC88; Ch: 5 Mounting: SMD Type of diode: TVS array Leakage current: 0.1µA Max. forward impulse current: 6A Number of channels: 5 Max. off-state voltage: 12V Breakdown voltage: 13.3...15V Peak pulse power dissipation: 0.1kW Kind of package: reel; tape Semiconductor structure: common anode Case: SC88 Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DF005S | ONSEMI |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; 50V; If: 1.5A; Ifsm: 50A; SDIP 4L Type of bridge rectifier: single-phase Max. off-state voltage: 50V Load current: 1.5A Max. forward impulse current: 50A Case: SDIP 4L Electrical mounting: SMT Kind of package: reel; tape |
на замовлення 17 шт: термін постачання 14-30 дні (днів) |
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| SZMMSZ13T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 13V; SMD; SOD123; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 13V Mounting: SMD Tolerance: ±5% Case: SOD123 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MMSZxxTxG Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SZMMSZ13ET1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 13V; SMD; SOD123; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 13V Mounting: SMD Tolerance: ±5% Case: SOD123 Kind of package: reel; tape Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BZX84C18LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 18V; SMD; SOT23; single diode; reel,tape; BZX84C Type of diode: Zener Power dissipation: 0.3W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: BZX84C |
на замовлення 717 шт: термін постачання 14-30 дні (днів) |
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MC74ACT259DR2G | ONSEMI |
Category: Latches Description: IC: digital; 8bit,latch; Ch: 8; IN: 5; TTL; 4.5÷5.5VDC; SMD; SOIC16 Operating temperature: -40...85°C Technology: TTL Number of inputs: 5 Kind of package: reel; tape Case: SOIC16 Family: ACT Kind of integrated circuit: 8bit; latch Number of channels: 8 Mounting: SMD Supply voltage: 4.5...5.5V DC Manufacturer series: ACT Type of integrated circuit: digital |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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BC808-25LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 25V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 160...400 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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MM5Z5V6T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 5.6V; SMD; SOD523F; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Case: SOD523F Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MM5Z |
на замовлення 4985 шт: термін постачання 14-30 дні (днів) |
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MM5Z5V6ST1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 5.6V; SMD; SOD523F; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Mounting: SMD Tolerance: ±2% Case: SOD523F Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MM5ZxxST1G |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SZMM5Z5V6ST1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 5.6V; SMD; SOD523F; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Mounting: SMD Tolerance: ±2% Case: SOD523F Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MM5ZxxST1G Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SZMM5Z5V6T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 5.6V; SMD; SOD523F; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Case: SOD523F Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MM5ZxxT1G Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NL27WZ17DFT2G-L22348 | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SC88A; -55÷125°C Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 2 Mounting: SMD Case: SC88A Operating temperature: -55...125°C Supply voltage: 1.65...5.5V DC Kind of input: with Schmitt trigger |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
| MM3Z3V9C | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 3.9V; SMD; SOD323F; reel,tape; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 3.9V Mounting: SMD Tolerance: ±5% Case: SOD323F Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MM3Z |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| GBPC3506 | ONSEMI |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 35A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Max. forward voltage: 1.1V Load current: 35A Max. forward impulse current: 0.4kA Version: square Case: GBPC Electrical mounting: THT Leads: connectors FASTON Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FSL176MRTUDTU | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 3.5A; 650V; 67kHz; Ch: 1; TO220-6U; flyback Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 3.5A Output voltage: 650V Frequency: 67kHz Number of channels: 1 Case: TO220-6U Mounting: THT Operating temperature: -40...125°C Topology: flyback Input voltage: 85...265V On-state resistance: 1.6Ω Duty cycle factor: 61...73% Power: 70W Operating voltage: 7.5...24.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NXH030F120M3F1PTG | ONSEMI |
Category: Transistor modules Description: Module; transistor/transistor; 1.2kV; 38A; PIM22; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 38A Case: PIM22 Topology: H-bridge Electrical mounting: Press-in PCB On-state resistance: 68.2mΩ Pulsed drain current: 115A Power dissipation: 100W Technology: SiC Gate-source voltage: -10...22V Kind of package: in-tray Mechanical mounting: screw |
товару немає в наявності |
Мінімальне замовлення: 28 шт В кошику од. на суму грн. | |||||||||||||||||||
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BSP52T1G | ONSEMI |
 Category: NPN SMD Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 0.8W Case: SOT223 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BSP52T3G | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 0.8W Case: SOT223 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SBSP52T1G | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 0.8W Case: SOT223 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NTBG040N120M3S | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 149A; 131W Mounting: SMD Pulsed drain current: 149A Power dissipation: 131W Gate charge: 75nC Polarisation: unipolar Technology: SiC Features of semiconductor devices: Kelvin terminal Drain current: 40A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -10...22V Kind of package: reel; tape Case: D2PAK-7 On-state resistance: 80mΩ |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||||||||
| NVBG040N120M3S | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 149A; 131W Mounting: SMD Pulsed drain current: 149A Power dissipation: 131W Gate charge: 75nC Polarisation: unipolar Technology: SiC Features of semiconductor devices: Kelvin terminal Drain current: 40A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -3...18V Kind of package: reel; tape Case: D2PAK-7 On-state resistance: 80mΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MMSZ4702T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 15V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MMSZ4xxTxG |
на замовлення 5755 шт: термін постачання 14-30 дні (днів) |
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| NTD360N80S3Z | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8.2A; Idm: 32.5A; 96W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 8.2A Pulsed drain current: 32.5A Power dissipation: 96W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.3Ω Mounting: SMD Gate charge: 25.3nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NTPF360N80S3Z | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 13A; Idm: 32.5A; 31W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 13A Pulsed drain current: 32.5A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: THT Gate charge: 25.3nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||||||
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NJVMJD112G | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 1.75W Case: DPAK Mounting: SMD Application: automotive industry Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| FSL337LRN | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; AC/DC switcher,PWM controller; 1.8A; 700V; 50kHz; Ch: 1 Type of integrated circuit: PMIC Output voltage: 700V Output current: 1.8A Case: DIP7 Mounting: THT Operating temperature: -40...125°C Number of channels: 1 Input voltage: 85...265V Frequency: 50kHz Operating voltage: 7...24.5V DC On-state resistance: 4.75Ω Topology: buck; buck-boost; flyback Duty cycle factor: 61...73% Application: SMPS Power: 9/20W Kind of integrated circuit: AC/DC switcher; PWM controller |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FSA4157P6X | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; SPDT; Ch: 1; Outputs: 2; SC70-6,SC88,SOT363; IN: 1 Type of integrated circuit: analog switch Output configuration: SPDT Number of channels: 1 Number of outputs: 2 Case: SC70-6; SC88; SOT363 Supply voltage: 1.65...5.5V DC Mounting: SMD Operating temperature: -40...85°C Number of inputs: 1 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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NLHV4157NDFT2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; switch,SPDT; Ch: 1; IN: 2; CMOS; SMD; SC88; -55÷125°C Type of integrated circuit: digital Kind of integrated circuit: SPDT; switch Technology: CMOS Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Supply voltage: -12...-4V DC Number of channels: 1 Number of inputs: 2 Case: SC88 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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1N4149 | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 100V; 0.5A; Ifsm: 4A; DO35; Ufmax: 1V; 500mW Type of diode: switching Mounting: THT Max. off-state voltage: 0.1kV Load current: 0.5A Semiconductor structure: single diode Capacitance: 2pF Max. forward impulse current: 4A Case: DO35 Max. forward voltage: 1V Reverse recovery time: 4ns Power dissipation: 0.5W Features of semiconductor devices: small signal |
на замовлення 4390 шт: термін постачання 14-30 дні (днів) |
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1N4149TR | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 100V; 0.5A; Ifsm: 4A; DO35; reel,tape; Ir: 50uA Type of diode: switching Mounting: THT Max. off-state voltage: 0.1kV Load current: 0.5A Semiconductor structure: single diode Capacitance: 2pF Max. forward impulse current: 4A Case: DO35 Kind of package: reel; tape Max. forward voltage: 1V Reverse recovery time: 4ns Power dissipation: 0.5W Features of semiconductor devices: small signal Leakage current: 50µA |
на замовлення 7152 шт: термін постачання 14-30 дні (днів) |
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| NTBLS001N06C | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 422A; Idm: 900A; 284W; H-PSOF8L Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 422A Pulsed drain current: 900A Power dissipation: 284W Case: H-PSOF8L Gate-source voltage: ±20V On-state resistance: 0.9mΩ Mounting: SMD Gate charge: 143nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||||||||
| NIS5132MN2TXG | ONSEMI |
Category: Power switches - integrated circuits Description: NIS5132MN2TXG |
на замовлення 2750 шт: термін постачання 14-30 дні (днів) |
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MMBTA06 | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.35W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.35W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||||||||||||||
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SMMBTA06LT3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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SMMBTA06WT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SMMBTA06WT3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| FAN3181TMX | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOIC8 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Technology: MillerDrive™ Case: SOIC8 Output current: -2...1.5A Number of channels: 1 Supply voltage: 25V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: non-inverting |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BD136G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 45V; 1.5A; 12.5W; TO225 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 1.5A Power dissipation: 12.5W Case: TO225 Current gain: 40...250 Mounting: THT Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NUP4302MR6T1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; bidirectional; TSOP6; Ch: 4; reel,tape Case: TSOP6 Mounting: SMD Kind of package: reel; tape Semiconductor structure: bidirectional Type of diode: TVS array Number of channels: 4 |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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MMSZ4701T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 14V; SMD; SOD123; reel,tape; single diode Mounting: SMD Tolerance: ±5% Type of diode: Zener Power dissipation: 0.5W Zener voltage: 14V Manufacturer series: MMSZ4xxTxG Case: SOD123 Kind of package: reel; tape Semiconductor structure: single diode |
на замовлення 5611 шт: термін постачання 14-30 дні (днів) |
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BD239CTU | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 100V; 2A; 30W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 30W Case: TO220AB Mounting: THT Kind of package: tube Current gain: 40 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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US1JFA | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SOD123F; Ufmax: 1.7V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.7V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NRVUS1JFA | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SOD123F; Ufmax: 1.7V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.7V Max. forward impulse current: 30A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SM15T1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 16.7V; 10A; 300W; double,common anode; ESD; SOT23 Type of diode: TVS array Peak pulse power dissipation: 0.3kW Max. off-state voltage: 15V Breakdown voltage: 16.7V Max. forward impulse current: 10A Semiconductor structure: common anode; double Case: SOT23 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Number of channels: 2 Version: ESD |
на замовлення 60 шт: термін постачання 14-30 дні (днів) |
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| GBPC1510 | ONSEMI |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 15A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 15A Max. forward impulse current: 0.3kA Version: square Case: GBPC Electrical mounting: THT Leads: connectors FASTON Kind of package: bulk Max. forward voltage: 1.1V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| GBPC1510W | ONSEMI |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 15A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 15A Max. forward impulse current: 0.3kA Version: square Case: GBPC-W Electrical mounting: THT Leads: wire Ø 1.0mm Kind of package: bulk Max. forward voltage: 1.1V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCV2393DR2G | ONSEMI |
Category: SMD comparators Description: IC: comparator; Cmp: 2; 2.7÷16V; SMT; SO8; reel,tape; Iio: 1pA; IB: 1pA Type of integrated circuit: comparator Number of comparators: 2 Operating voltage: 2.7...16V Mounting: SMT Case: SO8 Operating temperature: -65...150°C Input offset voltage: 13mV Kind of package: reel; tape Input offset current: 1pA Input bias current: 1pA Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC74HCT366ADR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; 3-state,buffer,hex,inverting; Ch: 6; CMOS,TTL; SMD Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; hex; inverting Number of channels: 6 Technology: CMOS; TTL Mounting: SMD Case: SOIC16 Kind of package: reel; tape Kind of output: 3-state Family: HCT Supply voltage: 2...6V DC Manufacturer series: HCT Operating temperature: -55...125°C |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
| NXH450B100H4Q2F2PG | ONSEMI |
Category: IGBT modules Description: Module: IGBT; SiC diode/transistor; Urmax: 1kV; Ic: 450A; Press-Fit Type of semiconductor module: IGBT Semiconductor structure: SiC diode/transistor Max. off-state voltage: 1kV Collector current: 450A Application: for UPS; Inverter Electrical mounting: Press-Fit Gate-emitter voltage: ±20V Mechanical mounting: screw Technology: SiC |
товару немає в наявності |
Мінімальне замовлення: 36 шт В кошику од. на суму грн. | |||||||||||||||||||
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74LCX32MTC | ONSEMI |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; tube Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: tube Family: LCX |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||||
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74LCX32MTCX | ONSEMI |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 10uA Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 10µA Family: LCX |
на замовлення 47 шт: термін постачання 14-30 дні (днів) |
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| MC100EP101FAG | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOR,OR; Ch: 4; IN: 16; ECL; SMD; 100EP; -40÷85°C; OUT: 8 Type of integrated circuit: digital Kind of gate: NOR; OR Number of channels: 4 Number of inputs: 16 Technology: ECL Mounting: SMD Manufacturer series: 100EP Operating temperature: -40...85°C Number of outputs: 8 Supply voltage: 3...5.5V |
товару немає в наявності |
Мінімальне замовлення: 250 шт В кошику од. на суму грн. | |||||||||||||||||||
| FCP400N80Z | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 14A; Idm: 33A; 195W; TO220-3 Kind of channel: enhancement Mounting: THT Type of transistor: N-MOSFET Case: TO220-3 Kind of package: tube Polarisation: unipolar Gate charge: 43nC On-state resistance: 0.4Ω Drain current: 14A Gate-source voltage: ±20V Pulsed drain current: 33A Power dissipation: 195W Drain-source voltage: 800V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SZESD9X5.0ST5G | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 6.2V; unidirectional; SOD923F; automotive industry Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 6.2V Semiconductor structure: unidirectional Case: SOD923F Mounting: SMD Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. |
| MMBZ5257BLT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 33V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Semiconductor structure: single diode
Mounting: SMD
Case: SOT23
Tolerance: ±5%
Kind of package: reel; tape
Manufacturer series: MMBZ52xxBLT1G
Power dissipation: 0.3W
Zener voltage: 33V
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 33V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Semiconductor structure: single diode
Mounting: SMD
Case: SOT23
Tolerance: ±5%
Kind of package: reel; tape
Manufacturer series: MMBZ52xxBLT1G
Power dissipation: 0.3W
Zener voltage: 33V
на замовлення 35363 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 72+ | 6.32 грн |
| 112+ | 3.77 грн |
| 156+ | 2.70 грн |
| 180+ | 2.33 грн |
| 1000+ | 1.47 грн |
| SZMMBZ5257BLT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 33V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMBZ52xxBLT1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 33V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMBZ52xxBLT1G
Application: automotive industry
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В кошику
од. на суму грн.
| NSVDTA123EM3T5G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Application: automotive industry
Quantity in set/package: 8000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Application: automotive industry
Quantity in set/package: 8000pcs.
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| NCV7321D12R2G |
|
Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5÷27VDC; LIN; SMD; SOIC8; reel,tape
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5...27V DC
Interface: LIN
Mounting: SMD
Case: SOIC8
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive industry
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5÷27VDC; LIN; SMD; SOIC8; reel,tape
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5...27V DC
Interface: LIN
Mounting: SMD
Case: SOIC8
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive industry
на замовлення 2977 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 51.48 грн |
| 13+ | 33.97 грн |
| 25+ | 28.68 грн |
| 100+ | 27.26 грн |
| MMSZ47T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 47V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZxxTxG
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 47V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZxxTxG
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В кошику
од. на суму грн.
| N24S64C4DYT3G |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; WLCSP4
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 3.5µs
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; WLCSP4
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 3.5µs
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| SMF12CT1G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 13.3÷15V; 6A; 100W; common anode; ESD; SC88; Ch: 5
Mounting: SMD
Type of diode: TVS array
Leakage current: 0.1µA
Max. forward impulse current: 6A
Number of channels: 5
Max. off-state voltage: 12V
Breakdown voltage: 13.3...15V
Peak pulse power dissipation: 0.1kW
Kind of package: reel; tape
Semiconductor structure: common anode
Case: SC88
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 13.3÷15V; 6A; 100W; common anode; ESD; SC88; Ch: 5
Mounting: SMD
Type of diode: TVS array
Leakage current: 0.1µA
Max. forward impulse current: 6A
Number of channels: 5
Max. off-state voltage: 12V
Breakdown voltage: 13.3...15V
Peak pulse power dissipation: 0.1kW
Kind of package: reel; tape
Semiconductor structure: common anode
Case: SC88
Version: ESD
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В кошику
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| DF005S |
|
Виробник: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 50V; If: 1.5A; Ifsm: 50A; SDIP 4L
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 1.5A
Max. forward impulse current: 50A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 50V; If: 1.5A; Ifsm: 50A; SDIP 4L
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 1.5A
Max. forward impulse current: 50A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: reel; tape
на замовлення 17 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 40.64 грн |
| SZMMSZ13T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 13V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZxxTxG
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 13V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZxxTxG
Application: automotive industry
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В кошику
од. на суму грн.
| SZMMSZ13ET1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 13V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 13V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
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| BZX84C18LT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; SOT23; single diode; reel,tape; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; SOT23; single diode; reel,tape; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84C
на замовлення 717 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 9.03 грн |
| 77+ | 5.45 грн |
| 123+ | 3.42 грн |
| 152+ | 2.78 грн |
| 250+ | 2.12 грн |
| 500+ | 1.75 грн |
| MC74ACT259DR2G |
|
Виробник: ONSEMI
Category: Latches
Description: IC: digital; 8bit,latch; Ch: 8; IN: 5; TTL; 4.5÷5.5VDC; SMD; SOIC16
Operating temperature: -40...85°C
Technology: TTL
Number of inputs: 5
Kind of package: reel; tape
Case: SOIC16
Family: ACT
Kind of integrated circuit: 8bit; latch
Number of channels: 8
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Type of integrated circuit: digital
Category: Latches
Description: IC: digital; 8bit,latch; Ch: 8; IN: 5; TTL; 4.5÷5.5VDC; SMD; SOIC16
Operating temperature: -40...85°C
Technology: TTL
Number of inputs: 5
Kind of package: reel; tape
Case: SOIC16
Family: ACT
Kind of integrated circuit: 8bit; latch
Number of channels: 8
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Type of integrated circuit: digital
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| BC808-25LT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 42+ | 10.84 грн |
| 55+ | 7.63 грн |
| 83+ | 5.07 грн |
| 100+ | 4.20 грн |
| 500+ | 2.85 грн |
| 1000+ | 2.47 грн |
| 1500+ | 2.30 грн |
| 3000+ | 2.05 грн |
| MM5Z5V6T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; SOD523F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Case: SOD523F
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM5Z
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; SOD523F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Case: SOD523F
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM5Z
на замовлення 4985 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 72+ | 6.32 грн |
| 107+ | 3.94 грн |
| 125+ | 3.35 грн |
| 158+ | 2.67 грн |
| 500+ | 2.16 грн |
| 1000+ | 2.08 грн |
| 3000+ | 1.98 грн |
| MM5Z5V6ST1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; SOD523F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±2%
Case: SOD523F
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MM5ZxxST1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; SOD523F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±2%
Case: SOD523F
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MM5ZxxST1G
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| SZMM5Z5V6ST1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; SOD523F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±2%
Case: SOD523F
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MM5ZxxST1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; SOD523F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±2%
Case: SOD523F
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MM5ZxxST1G
Application: automotive industry
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| SZMM5Z5V6T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; SOD523F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOD523F
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MM5ZxxT1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; SOD523F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOD523F
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MM5ZxxT1G
Application: automotive industry
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| NL27WZ17DFT2G-L22348 |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SC88A; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Mounting: SMD
Case: SC88A
Operating temperature: -55...125°C
Supply voltage: 1.65...5.5V DC
Kind of input: with Schmitt trigger
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SC88A; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Mounting: SMD
Case: SC88A
Operating temperature: -55...125°C
Supply voltage: 1.65...5.5V DC
Kind of input: with Schmitt trigger
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Мінімальне замовлення: 3000 шт
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| MM3Z3V9C |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.9V; SMD; SOD323F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Case: SOD323F
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MM3Z
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.9V; SMD; SOD323F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Case: SOD323F
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MM3Z
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| GBPC3506 |
|
Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
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| FSL176MRTUDTU |
|
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 3.5A; 650V; 67kHz; Ch: 1; TO220-6U; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 3.5A
Output voltage: 650V
Frequency: 67kHz
Number of channels: 1
Case: TO220-6U
Mounting: THT
Operating temperature: -40...125°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 1.6Ω
Duty cycle factor: 61...73%
Power: 70W
Operating voltage: 7.5...24.5V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 3.5A; 650V; 67kHz; Ch: 1; TO220-6U; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 3.5A
Output voltage: 650V
Frequency: 67kHz
Number of channels: 1
Case: TO220-6U
Mounting: THT
Operating temperature: -40...125°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 1.6Ω
Duty cycle factor: 61...73%
Power: 70W
Operating voltage: 7.5...24.5V DC
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| NXH030F120M3F1PTG |
|
Виробник: ONSEMI
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 38A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 38A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 68.2mΩ
Pulsed drain current: 115A
Power dissipation: 100W
Technology: SiC
Gate-source voltage: -10...22V
Kind of package: in-tray
Mechanical mounting: screw
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 38A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 38A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 68.2mΩ
Pulsed drain current: 115A
Power dissipation: 100W
Technology: SiC
Gate-source voltage: -10...22V
Kind of package: in-tray
Mechanical mounting: screw
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Мінімальне замовлення: 28 шт
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| BSP52T1G |
|
Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.8W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.8W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
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| BSP52T3G |
|
Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.8W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.8W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
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| SBSP52T1G |
|
Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.8W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.8W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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| NTBG040N120M3S |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 149A; 131W
Mounting: SMD
Pulsed drain current: 149A
Power dissipation: 131W
Gate charge: 75nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 40A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -10...22V
Kind of package: reel; tape
Case: D2PAK-7
On-state resistance: 80mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 149A; 131W
Mounting: SMD
Pulsed drain current: 149A
Power dissipation: 131W
Gate charge: 75nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 40A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -10...22V
Kind of package: reel; tape
Case: D2PAK-7
On-state resistance: 80mΩ
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Мінімальне замовлення: 800 шт
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| NVBG040N120M3S |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 149A; 131W
Mounting: SMD
Pulsed drain current: 149A
Power dissipation: 131W
Gate charge: 75nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 40A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -3...18V
Kind of package: reel; tape
Case: D2PAK-7
On-state resistance: 80mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 149A; 131W
Mounting: SMD
Pulsed drain current: 149A
Power dissipation: 131W
Gate charge: 75nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 40A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -3...18V
Kind of package: reel; tape
Case: D2PAK-7
On-state resistance: 80mΩ
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| MMSZ4702T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ4xxTxG
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ4xxTxG
на замовлення 5755 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 9.93 грн |
| 60+ | 7.04 грн |
| 70+ | 6.04 грн |
| 104+ | 4.04 грн |
| 124+ | 3.40 грн |
| 250+ | 2.75 грн |
| 500+ | 2.35 грн |
| 1000+ | 2.01 грн |
| 3000+ | 1.60 грн |
| NTD360N80S3Z |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.2A; Idm: 32.5A; 96W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.2A
Pulsed drain current: 32.5A
Power dissipation: 96W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 25.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.2A; Idm: 32.5A; 96W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.2A
Pulsed drain current: 32.5A
Power dissipation: 96W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 25.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NTPF360N80S3Z |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; Idm: 32.5A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Pulsed drain current: 32.5A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 25.3nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; Idm: 32.5A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Pulsed drain current: 32.5A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 25.3nC
Kind of package: tube
Kind of channel: enhancement
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Мінімальне замовлення: 1000 шт
В кошику
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| NJVMJD112G |
|
Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Application: automotive industry
Kind of package: tube
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Application: automotive industry
Kind of package: tube
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| FSL337LRN |
|
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 1.8A; 700V; 50kHz; Ch: 1
Type of integrated circuit: PMIC
Output voltage: 700V
Output current: 1.8A
Case: DIP7
Mounting: THT
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 85...265V
Frequency: 50kHz
Operating voltage: 7...24.5V DC
On-state resistance: 4.75Ω
Topology: buck; buck-boost; flyback
Duty cycle factor: 61...73%
Application: SMPS
Power: 9/20W
Kind of integrated circuit: AC/DC switcher; PWM controller
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 1.8A; 700V; 50kHz; Ch: 1
Type of integrated circuit: PMIC
Output voltage: 700V
Output current: 1.8A
Case: DIP7
Mounting: THT
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 85...265V
Frequency: 50kHz
Operating voltage: 7...24.5V DC
On-state resistance: 4.75Ω
Topology: buck; buck-boost; flyback
Duty cycle factor: 61...73%
Application: SMPS
Power: 9/20W
Kind of integrated circuit: AC/DC switcher; PWM controller
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| FSA4157P6X |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; SPDT; Ch: 1; Outputs: 2; SC70-6,SC88,SOT363; IN: 1
Type of integrated circuit: analog switch
Output configuration: SPDT
Number of channels: 1
Number of outputs: 2
Case: SC70-6; SC88; SOT363
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Operating temperature: -40...85°C
Number of inputs: 1
Category: Analog multiplexers and switches
Description: IC: analog switch; SPDT; Ch: 1; Outputs: 2; SC70-6,SC88,SOT363; IN: 1
Type of integrated circuit: analog switch
Output configuration: SPDT
Number of channels: 1
Number of outputs: 2
Case: SC70-6; SC88; SOT363
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Operating temperature: -40...85°C
Number of inputs: 1
товару немає в наявності
Мінімальне замовлення: 3000 шт
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од. на суму грн.
| NLHV4157NDFT2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; switch,SPDT; Ch: 1; IN: 2; CMOS; SMD; SC88; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: SPDT; switch
Technology: CMOS
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Supply voltage: -12...-4V DC
Number of channels: 1
Number of inputs: 2
Case: SC88
Category: Decoders, multiplexers, switches
Description: IC: digital; switch,SPDT; Ch: 1; IN: 2; CMOS; SMD; SC88; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: SPDT; switch
Technology: CMOS
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Supply voltage: -12...-4V DC
Number of channels: 1
Number of inputs: 2
Case: SC88
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
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| 1N4149 |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.5A; Ifsm: 4A; DO35; Ufmax: 1V; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 2pF
Max. forward impulse current: 4A
Case: DO35
Max. forward voltage: 1V
Reverse recovery time: 4ns
Power dissipation: 0.5W
Features of semiconductor devices: small signal
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.5A; Ifsm: 4A; DO35; Ufmax: 1V; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 2pF
Max. forward impulse current: 4A
Case: DO35
Max. forward voltage: 1V
Reverse recovery time: 4ns
Power dissipation: 0.5W
Features of semiconductor devices: small signal
на замовлення 4390 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 84+ | 5.42 грн |
| 148+ | 2.85 грн |
| 164+ | 2.57 грн |
| 500+ | 2.04 грн |
| 1000+ | 1.83 грн |
| 2500+ | 1.59 грн |
| 1N4149TR |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.5A; Ifsm: 4A; DO35; reel,tape; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 2pF
Max. forward impulse current: 4A
Case: DO35
Kind of package: reel; tape
Max. forward voltage: 1V
Reverse recovery time: 4ns
Power dissipation: 0.5W
Features of semiconductor devices: small signal
Leakage current: 50µA
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.5A; Ifsm: 4A; DO35; reel,tape; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 2pF
Max. forward impulse current: 4A
Case: DO35
Kind of package: reel; tape
Max. forward voltage: 1V
Reverse recovery time: 4ns
Power dissipation: 0.5W
Features of semiconductor devices: small signal
Leakage current: 50µA
на замовлення 7152 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.23 грн |
| 122+ | 3.44 грн |
| 162+ | 2.59 грн |
| 250+ | 2.26 грн |
| 500+ | 2.02 грн |
| 1000+ | 1.79 грн |
| 2500+ | 1.46 грн |
| 5000+ | 1.22 грн |
| NTBLS001N06C |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 422A; Idm: 900A; 284W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 422A
Pulsed drain current: 900A
Power dissipation: 284W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 0.9mΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 422A; Idm: 900A; 284W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 422A
Pulsed drain current: 900A
Power dissipation: 284W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 0.9mΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| NIS5132MN2TXG |
|
на замовлення 2750 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2750+ | 50.31 грн |
| MMBTA06 |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.35W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.35W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
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Мінімальне замовлення: 10 шт
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| SMMBTA06LT3G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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Мінімальне замовлення: 10000 шт
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| SMMBTA06WT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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| SMMBTA06WT3G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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| FAN3181TMX |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOIC8
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SOIC8
Output current: -2...1.5A
Number of channels: 1
Supply voltage: 25V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOIC8
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SOIC8
Output current: -2...1.5A
Number of channels: 1
Supply voltage: 25V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
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| BD136G |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 45V; 1.5A; 12.5W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO225
Current gain: 40...250
Mounting: THT
Kind of package: bulk
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 45V; 1.5A; 12.5W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO225
Current gain: 40...250
Mounting: THT
Kind of package: bulk
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| NUP4302MR6T1G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; TSOP6; Ch: 4; reel,tape
Case: TSOP6
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: bidirectional
Type of diode: TVS array
Number of channels: 4
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; TSOP6; Ch: 4; reel,tape
Case: TSOP6
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: bidirectional
Type of diode: TVS array
Number of channels: 4
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 102.96 грн |
| 6+ | 78.16 грн |
| 10+ | 65.58 грн |
| 30+ | 47.13 грн |
| 50+ | 44.28 грн |
| MMSZ4701T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 14V; SMD; SOD123; reel,tape; single diode
Mounting: SMD
Tolerance: ±5%
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 14V
Manufacturer series: MMSZ4xxTxG
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 14V; SMD; SOD123; reel,tape; single diode
Mounting: SMD
Tolerance: ±5%
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 14V
Manufacturer series: MMSZ4xxTxG
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
на замовлення 5611 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 72+ | 6.32 грн |
| 114+ | 3.69 грн |
| 192+ | 2.19 грн |
| 500+ | 1.57 грн |
| 1000+ | 1.47 грн |
| BD239CTU |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 30W
Case: TO220AB
Mounting: THT
Kind of package: tube
Current gain: 40
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 30W
Case: TO220AB
Mounting: THT
Kind of package: tube
Current gain: 40
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| US1JFA |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SOD123F; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.7V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SOD123F; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.7V
Kind of package: reel; tape
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| NRVUS1JFA |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SOD123F; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SOD123F; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
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| SM15T1G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 16.7V; 10A; 300W; double,common anode; ESD; SOT23
Type of diode: TVS array
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 10A
Semiconductor structure: common anode; double
Case: SOT23
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Number of channels: 2
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 16.7V; 10A; 300W; double,common anode; ESD; SOT23
Type of diode: TVS array
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 10A
Semiconductor structure: common anode; double
Case: SOT23
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Number of channels: 2
Version: ESD
на замовлення 60 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 26.19 грн |
| 22+ | 19.62 грн |
| 25+ | 17.36 грн |
| 50+ | 13.00 грн |
| GBPC1510 |
|
Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 15A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 15A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Max. forward voltage: 1.1V
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 15A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 15A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Max. forward voltage: 1.1V
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| GBPC1510W |
|
Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 15A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 15A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Max. forward voltage: 1.1V
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 15A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 15A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Max. forward voltage: 1.1V
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| NCV2393DR2G |
|
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; Cmp: 2; 2.7÷16V; SMT; SO8; reel,tape; Iio: 1pA; IB: 1pA
Type of integrated circuit: comparator
Number of comparators: 2
Operating voltage: 2.7...16V
Mounting: SMT
Case: SO8
Operating temperature: -65...150°C
Input offset voltage: 13mV
Kind of package: reel; tape
Input offset current: 1pA
Input bias current: 1pA
Application: automotive industry
Category: SMD comparators
Description: IC: comparator; Cmp: 2; 2.7÷16V; SMT; SO8; reel,tape; Iio: 1pA; IB: 1pA
Type of integrated circuit: comparator
Number of comparators: 2
Operating voltage: 2.7...16V
Mounting: SMT
Case: SO8
Operating temperature: -65...150°C
Input offset voltage: 13mV
Kind of package: reel; tape
Input offset current: 1pA
Input bias current: 1pA
Application: automotive industry
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| MC74HCT366ADR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; 3-state,buffer,hex,inverting; Ch: 6; CMOS,TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; hex; inverting
Number of channels: 6
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Kind of package: reel; tape
Kind of output: 3-state
Family: HCT
Supply voltage: 2...6V DC
Manufacturer series: HCT
Operating temperature: -55...125°C
Category: Gates, inverters
Description: IC: digital; 3-state,buffer,hex,inverting; Ch: 6; CMOS,TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; hex; inverting
Number of channels: 6
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Kind of package: reel; tape
Kind of output: 3-state
Family: HCT
Supply voltage: 2...6V DC
Manufacturer series: HCT
Operating temperature: -55...125°C
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Мінімальне замовлення: 2500 шт
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| NXH450B100H4Q2F2PG |
|
Виробник: ONSEMI
Category: IGBT modules
Description: Module: IGBT; SiC diode/transistor; Urmax: 1kV; Ic: 450A; Press-Fit
Type of semiconductor module: IGBT
Semiconductor structure: SiC diode/transistor
Max. off-state voltage: 1kV
Collector current: 450A
Application: for UPS; Inverter
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Mechanical mounting: screw
Technology: SiC
Category: IGBT modules
Description: Module: IGBT; SiC diode/transistor; Urmax: 1kV; Ic: 450A; Press-Fit
Type of semiconductor module: IGBT
Semiconductor structure: SiC diode/transistor
Max. off-state voltage: 1kV
Collector current: 450A
Application: for UPS; Inverter
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Mechanical mounting: screw
Technology: SiC
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Мінімальне замовлення: 36 шт
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| 74LCX32MTC |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: LCX
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: LCX
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Мінімальне замовлення: 3 шт
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| 74LCX32MTCX |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Family: LCX
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Family: LCX
на замовлення 47 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 23.48 грн |
| 25+ | 17.28 грн |
| 26+ | 16.61 грн |
| MC100EP101FAG |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR,OR; Ch: 4; IN: 16; ECL; SMD; 100EP; -40÷85°C; OUT: 8
Type of integrated circuit: digital
Kind of gate: NOR; OR
Number of channels: 4
Number of inputs: 16
Technology: ECL
Mounting: SMD
Manufacturer series: 100EP
Operating temperature: -40...85°C
Number of outputs: 8
Supply voltage: 3...5.5V
Category: Gates, inverters
Description: IC: digital; NOR,OR; Ch: 4; IN: 16; ECL; SMD; 100EP; -40÷85°C; OUT: 8
Type of integrated circuit: digital
Kind of gate: NOR; OR
Number of channels: 4
Number of inputs: 16
Technology: ECL
Mounting: SMD
Manufacturer series: 100EP
Operating temperature: -40...85°C
Number of outputs: 8
Supply voltage: 3...5.5V
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Мінімальне замовлення: 250 шт
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| FCP400N80Z |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 14A; Idm: 33A; 195W; TO220-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Case: TO220-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 43nC
On-state resistance: 0.4Ω
Drain current: 14A
Gate-source voltage: ±20V
Pulsed drain current: 33A
Power dissipation: 195W
Drain-source voltage: 800V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 14A; Idm: 33A; 195W; TO220-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Case: TO220-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 43nC
On-state resistance: 0.4Ω
Drain current: 14A
Gate-source voltage: ±20V
Pulsed drain current: 33A
Power dissipation: 195W
Drain-source voltage: 800V
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| SZESD9X5.0ST5G |
|
Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.2V; unidirectional; SOD923F; automotive industry
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Semiconductor structure: unidirectional
Case: SOD923F
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.2V; unidirectional; SOD923F; automotive industry
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Semiconductor structure: unidirectional
Case: SOD923F
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
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