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NCP1654BD65R2G NCP1654BD65R2G ONSEMI ncp1654-d.pdf Category: Drivers - integrated circuits
Description: IC: PMIC; -1.5÷1.5A; 9÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: -1.5...1.5A
Mounting: SMD
Operating voltage: 9...20V DC
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Topology: boost
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NCP1654BD200R2G NCP1654BD200R2G ONSEMI ncp1654-d.pdf Category: Drivers - integrated circuits
Description: IC: PMIC; -1.5÷1.5A; 9÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: -1.5...1.5A
Mounting: SMD
Operating voltage: 9...20V DC
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Topology: boost
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NSM4002MR6T1G ONSEMI nsm4002mr6-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2/0.5A; 0.3W; SC74-6
Case: SC74-6
Kind of package: reel; tape
Power dissipation: 0.3W
Collector-emitter voltage: 40V
Current gain: 100...300
Polarisation: bipolar
Frequency: 300MHz
Type of transistor: NPN x2
Mounting: SMD
Collector current: 0.2/0.5A
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TL431AIDR2G ONSEMI tl431-d.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
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FOD3120TSV ONSEMI fod3120-d.pdf Category: Optocouplers - Unclassified
Description: FOD3120TSV
на замовлення 1000 шт:
термін постачання 14-30 дні (днів)
1000+52.87 грн
Мінімальне замовлення: 1000
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FDMS7670 ONSEMI fdms7670-d.pdf FAIR-S-A0002363700-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; Idm: 150A; 62W; Power56
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Case: Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 56nC
On-state resistance: 5.3mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 42A
Power dissipation: 62W
Pulsed drain current: 150A
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MM74HCT244WM MM74HCT244WM ONSEMI MM74HCT244WM.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: SO20
Manufacturer series: HCT
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Quiescent current: 80µA
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FCH072N60 ONSEMI FCH072N60-D.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 156A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 33A
Pulsed drain current: 156A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 66mΩ
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Kind of channel: enhancement
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MBR0520L MBR0520L ONSEMI MBR0520L.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 20V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.5A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 5.5A
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BZX79C15-T50R ONSEMI BZX79C.PDF Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; reel,tape; CASE017AG; single diode; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX79C
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BZX79C15-T50A ONSEMI BZX79C.PDF Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; Ammo Pack; CASE017AG; single diode; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: Ammo Pack
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX79C
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2SD1816T-TL-H ONSEMI 2sb1216_2sd1816-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 1W; DPAK
Case: DPAK
Mounting: SMD
Power dissipation: 1W
Collector current: 4A
Collector-emitter voltage: 100V
Current gain: 200...400
Frequency: 180MHz
Polarisation: bipolar
Type of transistor: NPN
Kind of package: reel; tape
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74AC00MTC 74AC00MTC ONSEMI 74AC00.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 20µA
Manufacturer series: AC
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MC14021BDG MC14021BDG ONSEMI MC14021BDG.PDF Category: Shift registers
Description: IC: digital; Ch: 1; CMOS; SMD; SO16; HEF4000B
Mounting: SMD
Case: SO16
Kind of integrated circuit: 8bit; asynchronous; static shift register; synchronous
Type of integrated circuit: digital
Technology: CMOS
Number of channels: 1
Family: HEF4000B
на замовлення 2108 шт:
термін постачання 14-30 дні (днів)
11+42.85 грн
16+28.19 грн
25+24.89 грн
48+22.77 грн
96+20.40 грн
144+19.22 грн
240+18.12 грн
480+17.86 грн
960+17.18 грн
Мінімальне замовлення: 11
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MC14081BDG MC14081BDG ONSEMI MC140xxB.PDF Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Kind of package: tube
Technology: CMOS
Type of integrated circuit: digital
Number of channels: quad; 4
Mounting: SMD
Family: HEF4000B
Case: SO14
Operating temperature: -55...125°C
Delay time: 130ns
Number of inputs: 2
Supply voltage: 3...18V DC
Kind of gate: AND
на замовлення 194 шт:
термін постачання 14-30 дні (днів)
16+30.08 грн
18+23.53 грн
20+22.01 грн
Мінімальне замовлення: 16
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FDD3670 ONSEMI fdd3670-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 34A; Idm: 100A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 34A
Pulsed drain current: 100A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
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NCP308MT090TBG ONSEMI ncp308-d.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 0.84V
Number of channels: 1
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NCP308MT125TBG ONSEMI ncp308-d.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 1.16V
Number of channels: 1
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NCP308MT180TBG ONSEMI ONSM-S-A0007016915-1.pdf?hkey=EC6BD57738AE6E33B588C5F9AD3CEFA7 ncp308-d.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 1.67V
Number of channels: 1
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NCP308MT190TBG ONSEMI ncp308-d.pdf ONSM-S-A0007016915-1.pdf?t.download=true&u=5oefqw Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 1.77V
Number of channels: 1
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NCP308MT250TBG ONSEMI ncp308-d.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 2.33V
Number of channels: 1
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NCP308MT280TBG ONSEMI NCP308-D.PDF ONSM-S-A0007016915-1.pdf?hkey=EC6BD57738AE6E33B588C5F9AD3CEFA7 Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 2.61V
Number of channels: 1
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NCP308MT300TBG ONSEMI ncp308-d.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 2.79V
Number of channels: 1
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NCP308MT330TBG ONSEMI ncp308-d.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 3.07V
Number of channels: 1
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NCP308MT500TBG ONSEMI ncp308-d.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 4.65V
Number of channels: 1
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NCP308MTADJTBG ONSEMI ncp308-d.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 0.405V
Number of channels: 1
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NCP308SN125T1G ONSEMI ncp308-d.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); TSOP6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: TSOP6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 1.16V
Number of channels: 1
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NCP308SN190T1G ONSEMI ncp308-d.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); TSOP6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: TSOP6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 1.77V
Number of channels: 1
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NCP308SN250T1G ONSEMI ncp308-d.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); TSOP6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: TSOP6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 2.33V
Number of channels: 1
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FDMC4435BZ FDMC4435BZ ONSEMI FDMC4435BZ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -18A; 31W; MLP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -18A
Power dissipation: 31W
Case: MLP8
Gate-source voltage: ±25V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
на замовлення 2409 шт:
термін постачання 14-30 дні (днів)
5+104.84 грн
6+82.45 грн
10+72.46 грн
50+50.28 грн
100+43.00 грн
500+39.02 грн
Мінімальне замовлення: 5
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NTD6414ANT4G ONSEMI ntd6414an-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 117A; 100W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Pulsed drain current: 117A
Power dissipation: 100W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMA1023PZFDMA1023PZ
 FDMA1023PZ ONSEMI FDMA1023PZ.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.7A; 1.5W; MicroFET
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.7A
Gate charge: 12nC
On-state resistance: 0.195Ω
Power dissipation: 1.5W
Gate-source voltage: ±8V
Kind of channel: enhancement
Case: MicroFET
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NUP1105LT1G ONSEMI nup1105l-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 25.7÷28.4V; 8A; 350W; double,common cathode; ESD
Type of diode: TVS array
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 8A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: common cathode; double
Version: ESD
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 1
Application: CAN
Kind of package: reel; tape
Leakage current: 0.1µA
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SZNUP1105LT1G ONSEMI nup1105l-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 25.7÷28.4V; 8A; 350W; double,common cathode; ESD
Type of diode: TVS array
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 8A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: common cathode; double
Version: ESD
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 1
Application: automotive industry
Kind of package: reel; tape
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FDD2582 FDD2582 ONSEMI FDD2582.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 95W; DPAK
Technology: PowerTrench®
Mounting: SMD
Polarisation: unipolar
Gate charge: 25nC
On-state resistance: 172mΩ
Drain current: 21A
Gate-source voltage: ±20V
Power dissipation: 95W
Drain-source voltage: 150V
Kind of package: reel; tape
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
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MBR30170MFST3G ONSEMI mbr30170mfs-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD
Case: DFN5
Mounting: SMD
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward voltage: 0.89V
Max. forward impulse current: 540A
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MBR30170MFST1G ONSEMI mbr30170mfs-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 170V; 30A; reel,tape
Case: DFN5x6
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward voltage: 0.74V
Max. forward impulse current: 540A
Load current: 30A
Max. off-state voltage: 170V
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1N5948BRLG 1N5948BRLG ONSEMI 1N59xxB.pdf Category: THT Zener diodes
Description: Diode: Zener; 3W; 91V; reel,tape; CASE59; single diode; 1N59xxB
Manufacturer series: 1N59xxB
Mounting: THT
Case: CASE59
Type of diode: Zener
Power dissipation: 3W
Tolerance: ±5%
Zener voltage: 91V
Kind of package: reel; tape
Semiconductor structure: single diode
на замовлення 4851 шт:
термін постачання 14-30 дні (днів)
20+22.79 грн
35+12.36 грн
41+10.33 грн
100+8.63 грн
500+6.18 грн
1000+5.93 грн
Мінімальне замовлення: 20
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NCV8518CPDR2G ONSEMI ncv8518c-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.25A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Application: automotive industry
Output current: 0.25A
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
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NCV8518CPWR2G ONSEMI ncv8518c-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.25A; SO16-W; SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SO16-W
Kind of package: reel; tape
Application: automotive industry
Output current: 0.25A
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
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FDP150N10 ONSEMI fdp150n10-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 228A; 110W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Pulsed drain current: 228A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhancement
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FDP150N10A-F102 ONSEMI FDP150N10A.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 200A; 91W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 91W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 16.2nC
Kind of package: tube
Kind of channel: enhancement
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DF02M DF02M ONSEMI DF005-10m.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1.5A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 1.5A
Max. forward impulse current: 50A
Case: MDIP4L
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Electrical mounting: THT
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NCV8152MX180280TCG ONSEMI ncv8152-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.15A; XDFN6; SMD; Ch: 2
Application: automotive industry
Kind of package: reel; tape
Case: XDFN6
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.15A
Number of channels: 2
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NCV8154MW180280TBG ONSEMI ncv8154-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; DFN10; SMD; reel,tape
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Case: DFN10
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
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MBR140ESFT1G ONSEMI mbr140esf-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Max. forward voltage: 0.56V
Max. forward impulse current: 30A
Semiconductor structure: single diode
Kind of package: reel; tape
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MBR140SFT3G ONSEMI mbr140sft1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Max. forward voltage: 0.55V
Leakage current: 0.5mA
Max. forward impulse current: 30A
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FAN3225TMX ONSEMI fan3223-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; -5÷5A
Mounting: SMD
Operating temperature: -40...125°C
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of package: reel; tape
Output current: -5...5A
Pulse fall time: 9ns
Impulse rise time: 12ns
Number of channels: 2
Supply voltage: 4.5...18V DC
Case: SO8
Type of integrated circuit: driver
Technology: MillerDrive™
Kind of output: inverting; non-inverting
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ES3D ES3D ONSEMI ES3J.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMC
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 1.66W
Capacitance: 45pF
на замовлення 1847 шт:
термін постачання 14-30 дні (днів)
12+39.20 грн
17+26.16 грн
50+20.74 грн
100+18.71 грн
250+16.25 грн
500+14.73 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
BAS16LT3G BAS16LT3G ONSEMI BAS16LT1G.PDF Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
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SBAS16LT3G SBAS16LT3G ONSEMI BAS16LT1G.PDF Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 30µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
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1SMB5914BT3G 1SMB5914BT3G ONSEMI 1SMB59xxBT3G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 3W; 3.6V; SMD; SMB; reel,tape; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
на замовлення 595 шт:
термін постачання 14-30 дні (днів)
20+22.79 грн
30+14.39 грн
37+11.60 грн
59+7.20 грн
100+6.60 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
LM358AN LM358AN ONSEMI LM358AN.pdf Category: THT operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; DIP8
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Number of channels: dual; 2
Mounting: THT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: DIP8
Operating temperature: 0...70°C
Slew rate: 0.6V/μs
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FCPF380N65FL1-F154 ONSEMI fcpf380n65fl1-f154-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.2A; Idm: 30.6A; 33W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
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MBT3946DW1T1G MBT3946DW1T1G ONSEMI MBT3946DW1T1G.PDF Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250...300MHz
на замовлення 962 шт:
термін постачання 14-30 дні (днів)
39+11.85 грн
55+7.70 грн
82+5.21 грн
100+4.42 грн
500+3.06 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
MBT3946DW1T2G MBT3946DW1T2G ONSEMI mbt3946dw1t1-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250...300MHz
на замовлення 4627 шт:
термін постачання 14-30 дні (днів)
46+10.03 грн
79+5.42 грн
103+4.13 грн
153+2.77 грн
500+1.74 грн
3000+1.58 грн
Мінімальне замовлення: 46
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SMBT3946DW1T1G ONSEMI mbt3946dw1t1-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
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TIL113M TIL113M ONSEMI TIL113M-ONS.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 30V
Type of optocoupler: optocoupler
Turn-on time: 5µs
Turn-off time: 0.1ms
Number of channels: 1
Max. off-state voltage: 3V
Collector-emitter voltage: 30V
CTR@If: 300%@10mA
Insulation voltage: 4.17kV
Kind of output: Darlington
Case: DIP6
Mounting: THT
на замовлення 968 шт:
термін постачання 14-30 дні (днів)
9+51.05 грн
14+30.56 грн
50+26.16 грн
100+24.29 грн
500+24.21 грн
Мінімальне замовлення: 9
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SZMMSZ5250BT1G ONSEMI MMSZ52xxT1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 20V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
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MMSZ5250B ONSEMI MMSZ52xxT1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 20V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
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NCP1654BD65R2G ncp1654-d.pdf
NCP1654BD65R2G
Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; -1.5÷1.5A; 9÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: -1.5...1.5A
Mounting: SMD
Operating voltage: 9...20V DC
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Topology: boost
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NCP1654BD200R2G ncp1654-d.pdf
NCP1654BD200R2G
Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; -1.5÷1.5A; 9÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: -1.5...1.5A
Mounting: SMD
Operating voltage: 9...20V DC
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Topology: boost
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NSM4002MR6T1G nsm4002mr6-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2/0.5A; 0.3W; SC74-6
Case: SC74-6
Kind of package: reel; tape
Power dissipation: 0.3W
Collector-emitter voltage: 40V
Current gain: 100...300
Polarisation: bipolar
Frequency: 300MHz
Type of transistor: NPN x2
Mounting: SMD
Collector current: 0.2/0.5A
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TL431AIDR2G tl431-d.pdf
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
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FOD3120TSV fod3120-d.pdf
Виробник: ONSEMI
Category: Optocouplers - Unclassified
Description: FOD3120TSV
на замовлення 1000 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1000+52.87 грн
Мінімальне замовлення: 1000
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FDMS7670 fdms7670-d.pdf FAIR-S-A0002363700-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; Idm: 150A; 62W; Power56
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Case: Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 56nC
On-state resistance: 5.3mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 42A
Power dissipation: 62W
Pulsed drain current: 150A
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MM74HCT244WM MM74HCT244WM.pdf
MM74HCT244WM
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: SO20
Manufacturer series: HCT
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Quiescent current: 80µA
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FCH072N60 FCH072N60-D.PDF
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 156A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 33A
Pulsed drain current: 156A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 66mΩ
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Kind of channel: enhancement
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MBR0520L MBR0520L.pdf
MBR0520L
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 20V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.5A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 5.5A
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BZX79C15-T50R BZX79C.PDF
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; reel,tape; CASE017AG; single diode; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX79C
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BZX79C15-T50A BZX79C.PDF
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; Ammo Pack; CASE017AG; single diode; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: Ammo Pack
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX79C
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2SD1816T-TL-H 2sb1216_2sd1816-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 1W; DPAK
Case: DPAK
Mounting: SMD
Power dissipation: 1W
Collector current: 4A
Collector-emitter voltage: 100V
Current gain: 200...400
Frequency: 180MHz
Polarisation: bipolar
Type of transistor: NPN
Kind of package: reel; tape
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74AC00MTC 74AC00.pdf
74AC00MTC
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 20µA
Manufacturer series: AC
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MC14021BDG MC14021BDG.PDF
MC14021BDG
Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; Ch: 1; CMOS; SMD; SO16; HEF4000B
Mounting: SMD
Case: SO16
Kind of integrated circuit: 8bit; asynchronous; static shift register; synchronous
Type of integrated circuit: digital
Technology: CMOS
Number of channels: 1
Family: HEF4000B
на замовлення 2108 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
11+42.85 грн
16+28.19 грн
25+24.89 грн
48+22.77 грн
96+20.40 грн
144+19.22 грн
240+18.12 грн
480+17.86 грн
960+17.18 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
MC14081BDG MC140xxB.PDF
MC14081BDG
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Kind of package: tube
Technology: CMOS
Type of integrated circuit: digital
Number of channels: quad; 4
Mounting: SMD
Family: HEF4000B
Case: SO14
Operating temperature: -55...125°C
Delay time: 130ns
Number of inputs: 2
Supply voltage: 3...18V DC
Kind of gate: AND
на замовлення 194 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
16+30.08 грн
18+23.53 грн
20+22.01 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
FDD3670 fdd3670-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 34A; Idm: 100A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 34A
Pulsed drain current: 100A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
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NCP308MT090TBG ncp308-d.pdf
Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 0.84V
Number of channels: 1
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NCP308MT125TBG ncp308-d.pdf
Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 1.16V
Number of channels: 1
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NCP308MT180TBG ONSM-S-A0007016915-1.pdf?hkey=EC6BD57738AE6E33B588C5F9AD3CEFA7 ncp308-d.pdf
Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 1.67V
Number of channels: 1
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NCP308MT190TBG ncp308-d.pdf ONSM-S-A0007016915-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 1.77V
Number of channels: 1
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NCP308MT250TBG ncp308-d.pdf
Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 2.33V
Number of channels: 1
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NCP308MT280TBG NCP308-D.PDF ONSM-S-A0007016915-1.pdf?hkey=EC6BD57738AE6E33B588C5F9AD3CEFA7
Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 2.61V
Number of channels: 1
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NCP308MT300TBG ncp308-d.pdf
Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 2.79V
Number of channels: 1
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NCP308MT330TBG ncp308-d.pdf
Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 3.07V
Number of channels: 1
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NCP308MT500TBG ncp308-d.pdf
Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 4.65V
Number of channels: 1
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NCP308MTADJTBG ncp308-d.pdf
Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 0.405V
Number of channels: 1
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NCP308SN125T1G ncp308-d.pdf
Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); TSOP6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: TSOP6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 1.16V
Number of channels: 1
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NCP308SN190T1G ncp308-d.pdf
Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); TSOP6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: TSOP6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 1.77V
Number of channels: 1
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NCP308SN250T1G ncp308-d.pdf
Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); TSOP6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: TSOP6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 2.33V
Number of channels: 1
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FDMC4435BZ FDMC4435BZ.pdf
FDMC4435BZ
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -18A; 31W; MLP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -18A
Power dissipation: 31W
Case: MLP8
Gate-source voltage: ±25V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
на замовлення 2409 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
5+104.84 грн
6+82.45 грн
10+72.46 грн
50+50.28 грн
100+43.00 грн
500+39.02 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
NTD6414ANT4G ntd6414an-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 117A; 100W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Pulsed drain current: 117A
Power dissipation: 100W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMA1023PZ FDMA1023PZ.pdf
FDMA1023PZFDMA1023PZ
FDMA1023PZFDMA1023PZ
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.7A; 1.5W; MicroFET
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.7A
Gate charge: 12nC
On-state resistance: 0.195Ω
Power dissipation: 1.5W
Gate-source voltage: ±8V
Kind of channel: enhancement
Case: MicroFET
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NUP1105LT1G nup1105l-d.pdf
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 25.7÷28.4V; 8A; 350W; double,common cathode; ESD
Type of diode: TVS array
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 8A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: common cathode; double
Version: ESD
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 1
Application: CAN
Kind of package: reel; tape
Leakage current: 0.1µA
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SZNUP1105LT1G nup1105l-d.pdf
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 25.7÷28.4V; 8A; 350W; double,common cathode; ESD
Type of diode: TVS array
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 8A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: common cathode; double
Version: ESD
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 1
Application: automotive industry
Kind of package: reel; tape
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FDD2582 FDD2582.pdf
FDD2582
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 95W; DPAK
Technology: PowerTrench®
Mounting: SMD
Polarisation: unipolar
Gate charge: 25nC
On-state resistance: 172mΩ
Drain current: 21A
Gate-source voltage: ±20V
Power dissipation: 95W
Drain-source voltage: 150V
Kind of package: reel; tape
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
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MBR30170MFST3G mbr30170mfs-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD
Case: DFN5
Mounting: SMD
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward voltage: 0.89V
Max. forward impulse current: 540A
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MBR30170MFST1G mbr30170mfs-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 170V; 30A; reel,tape
Case: DFN5x6
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward voltage: 0.74V
Max. forward impulse current: 540A
Load current: 30A
Max. off-state voltage: 170V
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1N5948BRLG 1N59xxB.pdf
1N5948BRLG
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 91V; reel,tape; CASE59; single diode; 1N59xxB
Manufacturer series: 1N59xxB
Mounting: THT
Case: CASE59
Type of diode: Zener
Power dissipation: 3W
Tolerance: ±5%
Zener voltage: 91V
Kind of package: reel; tape
Semiconductor structure: single diode
на замовлення 4851 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
20+22.79 грн
35+12.36 грн
41+10.33 грн
100+8.63 грн
500+6.18 грн
1000+5.93 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
NCV8518CPDR2G ncv8518c-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.25A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Application: automotive industry
Output current: 0.25A
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
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NCV8518CPWR2G ncv8518c-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.25A; SO16-W; SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SO16-W
Kind of package: reel; tape
Application: automotive industry
Output current: 0.25A
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
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FDP150N10 fdp150n10-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 228A; 110W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Pulsed drain current: 228A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhancement
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FDP150N10A-F102 FDP150N10A.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 200A; 91W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 91W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 16.2nC
Kind of package: tube
Kind of channel: enhancement
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DF02M DF005-10m.pdf
DF02M
Виробник: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1.5A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 1.5A
Max. forward impulse current: 50A
Case: MDIP4L
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Electrical mounting: THT
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NCV8152MX180280TCG ncv8152-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.15A; XDFN6; SMD; Ch: 2
Application: automotive industry
Kind of package: reel; tape
Case: XDFN6
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.15A
Number of channels: 2
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NCV8154MW180280TBG ncv8154-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; DFN10; SMD; reel,tape
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Case: DFN10
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
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MBR140ESFT1G mbr140esf-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Max. forward voltage: 0.56V
Max. forward impulse current: 30A
Semiconductor structure: single diode
Kind of package: reel; tape
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MBR140SFT3G mbr140sft1-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Max. forward voltage: 0.55V
Leakage current: 0.5mA
Max. forward impulse current: 30A
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FAN3225TMX fan3223-d.pdf
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; -5÷5A
Mounting: SMD
Operating temperature: -40...125°C
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of package: reel; tape
Output current: -5...5A
Pulse fall time: 9ns
Impulse rise time: 12ns
Number of channels: 2
Supply voltage: 4.5...18V DC
Case: SO8
Type of integrated circuit: driver
Technology: MillerDrive™
Kind of output: inverting; non-inverting
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ES3D ES3J.pdf
ES3D
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMC
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 1.66W
Capacitance: 45pF
на замовлення 1847 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
12+39.20 грн
17+26.16 грн
50+20.74 грн
100+18.71 грн
250+16.25 грн
500+14.73 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
BAS16LT3G BAS16LT1G.PDF
BAS16LT3G
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
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SBAS16LT3G BAS16LT1G.PDF
SBAS16LT3G
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 30µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
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1SMB5914BT3G 1SMB59xxBT3G.PDF
1SMB5914BT3G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 3.6V; SMD; SMB; reel,tape; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
на замовлення 595 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
20+22.79 грн
30+14.39 грн
37+11.60 грн
59+7.20 грн
100+6.60 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
LM358AN LM358AN.pdf
LM358AN
Виробник: ONSEMI
Category: THT operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; DIP8
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Number of channels: dual; 2
Mounting: THT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: DIP8
Operating temperature: 0...70°C
Slew rate: 0.6V/μs
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FCPF380N65FL1-F154 fcpf380n65fl1-f154-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.2A; Idm: 30.6A; 33W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
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MBT3946DW1T1G MBT3946DW1T1G.PDF
MBT3946DW1T1G
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250...300MHz
на замовлення 962 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
39+11.85 грн
55+7.70 грн
82+5.21 грн
100+4.42 грн
500+3.06 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
MBT3946DW1T2G mbt3946dw1t1-d.pdf
MBT3946DW1T2G
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250...300MHz
на замовлення 4627 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
46+10.03 грн
79+5.42 грн
103+4.13 грн
153+2.77 грн
500+1.74 грн
3000+1.58 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
SMBT3946DW1T1G mbt3946dw1t1-d.pdf
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
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TIL113M TIL113M-ONS.pdf
TIL113M
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 30V
Type of optocoupler: optocoupler
Turn-on time: 5µs
Turn-off time: 0.1ms
Number of channels: 1
Max. off-state voltage: 3V
Collector-emitter voltage: 30V
CTR@If: 300%@10mA
Insulation voltage: 4.17kV
Kind of output: Darlington
Case: DIP6
Mounting: THT
на замовлення 968 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
9+51.05 грн
14+30.56 грн
50+26.16 грн
100+24.29 грн
500+24.21 грн
Мінімальне замовлення: 9
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SZMMSZ5250BT1G MMSZ52xxT1G.PDF
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 20V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
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MMSZ5250B MMSZ52xxT1G.PDF
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 20V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
товару немає в наявності
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