Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
MM74HC373WMX | ONSEMI |
![]() Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20-W; HC; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Supply voltage: 2...6V DC Mounting: SMD Case: SO20-W Operating temperature: -40...85°C Kind of output: 3-state Trigger: level-triggered Manufacturer series: HC Technology: CMOS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
![]() |
BCP68T1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 20V; 1A; 1.5W; SOT223-4,TO261-4 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 1A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 85...375 Mounting: SMD Kind of package: reel; tape Frequency: 60MHz |
на замовлення 982 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
SBCP68T1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 20V; 1A; 1.5W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 1A Power dissipation: 1.5W Case: SOT223 Current gain: 50...375 Mounting: SMD Kind of package: reel; tape Frequency: 60MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
MC74HC4067ADTR2G | ONSEMI |
![]() Description: IC: digital; analog,demultiplexer,multiplexer,switch; Ch: 1; CMOS Type of integrated circuit: digital Kind of integrated circuit: analog; demultiplexer; multiplexer; switch Number of channels: 1 Technology: CMOS Mounting: SMD Case: TSSOP24 Manufacturer series: HC Supply voltage: 2...6V DC Family: HC Kind of package: reel; tape Operating temperature: -55...125°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
![]() |
SBC856ALT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225/0.3W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.225/0.3W Case: SOT23; TO236AB Current gain: 125...250 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
на замовлення 2466 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
HUF75332P3 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 60A; 145W; TO220AB Drain-source voltage: 55V Drain current: 60A On-state resistance: 16mΩ Type of transistor: N-MOSFET Power dissipation: 145W Polarisation: unipolar Kind of package: tube Gate charge: 85nC Technology: UltraFET® Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT Case: TO220AB |
на замовлення 45 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
NRVUS2MA | ONSEMI |
![]() Description: Diode: rectifying; SMD; 1000V; 1.5A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1.5A Reverse recovery time: 75ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.7V Max. forward impulse current: 50A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
BC849BLT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 2975 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
BAW56LT1G | ONSEMI |
![]() Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 4A Power dissipation: 0.3W Case: SOT23 Mounting: SMD Kind of package: reel; tape Capacitance: 2pF Max. off-state voltage: 70V Max. forward voltage: 1.25V Load current: 0.2A Semiconductor structure: common anode; double Reverse recovery time: 6ns Max. forward impulse current: 4A Leakage current: 50µA Type of diode: switching Features of semiconductor devices: fast switching |
на замовлення 14385 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
BAW56LT3G | ONSEMI |
![]() Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: common anode; double Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4A Leakage current: 50µA Power dissipation: 0.3W Kind of package: reel; tape Features of semiconductor devices: fast switching |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
MBRA140T3G | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.74V Kind of package: reel; tape Max. load current: 2A |
на замовлення 3152 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
BC517-D74Z | ONSEMI |
![]() Description: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.625W; TO92 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 1.2A Power dissipation: 0.625W Case: TO92 Mounting: THT Kind of package: Ammo Pack |
на замовлення 2863 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
MC1455DR2G | ONSEMI |
![]() Description: IC: peripheral circuit; astable,monostable,RC timer; 4.5÷16VDC Type of integrated circuit: peripheral circuit Kind of integrated circuit: astable; monostable; RC timer Supply voltage: 4.5...16V DC Case: SO8 DC supply current: 10mA Output current: 0.2A Mounting: SMD Operating temperature: 0...70°C Kind of package: reel; tape Controlled voltage: 10V |
на замовлення 1620 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
MBRS260T3G | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape Max. off-state voltage: 60V Max. forward voltage: 0.55V Load current: 2A Semiconductor structure: single diode Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Case: SMB |
на замовлення 1924 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
FCD5N60TM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 2.9A; 54W; DPAK Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.9A Power dissipation: 54W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
FDD5N60NZTM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 83W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.4A Power dissipation: 83W Case: DPAK Gate-source voltage: ±25V On-state resistance: 2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2425 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
FQD5N60CTM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 1.8A; 49W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.8A Power dissipation: 49W Case: DPAK Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FQI5N60CTU | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 600V; 2.6A; Idm: 18A; 100W; I2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.6A Pulsed drain current: 18A Power dissipation: 100W Case: I2PAK Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FQU5N60CTU | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 600V; 1.8A; Idm: 11.2A; 49W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.8A Pulsed drain current: 11.2A Power dissipation: 49W Case: IPAK Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FCH25N60N | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 75A; 216W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Pulsed drain current: 75A Power dissipation: 216W Case: TO247 Gate-source voltage: ±30V On-state resistance: 108mΩ Mounting: THT Gate charge: 57nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
![]() |
MOC3051M | ONSEMI |
![]() ![]() Description: Optotriac; 5.3kV; Uout: 600V; DIP6 Type of optocoupler: optotriac Insulation voltage: 5.3kV Kind of output: without zero voltage crossing driver Case: DIP6 Max. off-state voltage: 3V Trigger current: 15mA Mounting: THT Output voltage: 600V |
на замовлення 713 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
2N3773G | ONSEMI |
![]() ![]() Description: Transistor: NPN; bipolar; 160V; 16A; 150W; TO3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 16A Power dissipation: 150W Case: TO3 Mounting: THT Kind of package: in-tray Frequency: 200kHz |
на замовлення 68 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
74VHC245M | ONSEMI |
![]() Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20-W; VHC Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Mounting: SMD Case: SO20-W Supply voltage: 2...5.5V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: tube Quiescent current: 40µA Manufacturer series: VHC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
74VHC245MTCX | ONSEMI |
![]() Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; VHC Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Mounting: SMD Case: TSSOP20 Supply voltage: 2...5.5V DC Operating temperature: -40...85°C Kind of output: 3-state Manufacturer series: VHC |
на замовлення 637 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
74VHC245MX | ONSEMI |
![]() Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20-W; VHC Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Mounting: SMD Case: SO20-W Supply voltage: 2...5.5V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: reel; tape Quiescent current: 40µA Manufacturer series: VHC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FCD380N60E | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 6.4A; 106W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.4A Power dissipation: 106W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
![]() |
TLV431ALPG | ONSEMI |
![]() Description: IC: voltage reference source; 1.24V; ±1%; TO92; bulk; 20mA Type of integrated circuit: voltage reference source Reference voltage: 1.24V Tolerance: ±1% Mounting: THT Case: TO92 Operating temperature: -40...85°C Operating voltage: 1.24...16V Kind of package: bulk Maximum output current: 20mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
TLV431ALPRAG | ONSEMI |
![]() Description: IC: voltage reference source; 1.24V; ±1%; TO92; reel,tape; 20mA Type of integrated circuit: voltage reference source Reference voltage: 1.24V Tolerance: ±1% Mounting: THT Case: TO92 Operating temperature: -40...85°C Operating voltage: 1.24...16V Kind of package: reel; tape Maximum output current: 20mA |
на замовлення 1679 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
TLV431ASN1T1G | ONSEMI |
![]() Description: IC: voltage reference source; 1.24V; ±1%; SOT23; reel,tape; 20mA Type of integrated circuit: voltage reference source Reference voltage: 1.24V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: -40...85°C Operating voltage: 1.24...16V Kind of package: reel; tape Maximum output current: 20mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
TLV431ASNT1G | ONSEMI |
![]() Description: IC: voltage reference source; 1.24V; ±1%; TSOP5; reel,tape; 20mA Type of integrated circuit: voltage reference source Reference voltage: 1.24V Tolerance: ±1% Mounting: SMD Case: TSOP5 Operating temperature: -40...85°C Operating voltage: 1.24...16V Kind of package: reel; tape Maximum output current: 20mA |
на замовлення 2585 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
TLV431BLPRAG | ONSEMI |
![]() Description: IC: voltage reference source; 1.24V; ±0.5%; TO92; reel,tape; 20mA Type of integrated circuit: voltage reference source Reference voltage: 1.24V Tolerance: ±0.5% Mounting: THT Case: TO92 Operating temperature: -40...85°C Operating voltage: 1.24...16V Kind of package: reel; tape Maximum output current: 20mA |
на замовлення 376 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
TLV431BSN1T1G | ONSEMI |
![]() Description: IC: voltage reference source; 1.24V; ±1%; SOT23; reel,tape; 20mA Type of integrated circuit: voltage reference source Reference voltage: 1.24V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: -40...85°C Operating voltage: 1.24...16V Kind of package: reel; tape Maximum output current: 20mA |
на замовлення 1764 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
TLV431BSNT1G | ONSEMI |
![]() Description: IC: voltage reference source; 1.24V; ±0.5%; TSOP5; reel,tape; 20mA Type of integrated circuit: voltage reference source Reference voltage: 1.24V Tolerance: ±0.5% Mounting: SMD Case: TSOP5 Operating temperature: -40...85°C Operating voltage: 1.24...16V Kind of package: reel; tape Maximum output current: 20mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
![]() |
TLV431CSN1T1G | ONSEMI |
![]() Description: IC: voltage reference source; 1.24V; ±0.2%; SOT23; reel,tape; 20mA Type of integrated circuit: voltage reference source Reference voltage: 1.24V Tolerance: ±0.2% Mounting: SMD Case: SOT23 Operating temperature: -40...85°C Operating voltage: 1.24...16V Kind of package: reel; tape Maximum output current: 20mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
NCP45521IMNTWG-H | ONSEMI |
![]() Description: IC: power switch; high-side; 10.5A; Ch: 1; N-Channel; SMD; DFN8 Case: DFN8 Supply voltage: 3...5.5V DC On-state resistance: 9.5/22.5mΩ Output current: 10.5A Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel Active logical level: high Kind of package: reel; tape Control voltage: 0.5...13.5V DC Kind of integrated circuit: high-side Mounting: SMD |
на замовлення 7 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
BD237G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 80V; 2A; 25W; TO225 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 2A Power dissipation: 25W Case: TO225 Mounting: THT Kind of package: bulk Current gain: 40 Frequency: 3MHz |
на замовлення 481 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
FIN1001M5X | ONSEMI |
![]() Description: IC: digital; differential,line driver,translator; LVDS; 3.6VDC Supply voltage: 3.6V DC Type of integrated circuit: digital Number of channels: 1 Kind of package: reel; tape Technology: LVDS Kind of integrated circuit: differential; line driver; translator Mounting: SMD Operating temperature: -40...125°C Case: SOT23-5 |
на замовлення 5780 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
2N6517BU | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 350V; 0.5A; 0.625W; TO92 Type of transistor: NPN Polarisation: bipolar Power dissipation: 0.625W Case: TO92 Mounting: THT Kind of package: bulk Frequency: 40Hz...200MHz Collector-emitter voltage: 350V Current gain: 20...200 Collector current: 0.5A |
на замовлення 5480 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
2N6517TA | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 350V; 0.5A; 0.625W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Power dissipation: 0.625W Case: TO92 Formed Mounting: THT Kind of package: Ammo Pack Frequency: 40...200MHz Collector-emitter voltage: 350V Current gain: 30...200 Collector current: 0.5A |
на замовлення 1703 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
2N6520TA | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 350V; 0.5A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Power dissipation: 0.625W Case: TO92 Formed Mounting: THT Kind of package: Ammo Pack Frequency: 40...200MHz Collector-emitter voltage: 350V Current gain: 30...200 Collector current: 0.5A |
на замовлення 767 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
MMUN2234LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 47kΩ |
на замовлення 3965 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
FJPF13007H2TU | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 400V; 8A; 40W; TO220FP Case: TO220FP Frequency: 4MHz Collector-emitter voltage: 400V Current gain: 8...60 Collector current: 8A Type of transistor: NPN Power dissipation: 40W Polarisation: bipolar Kind of package: tube Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
MUR1620CTG | ONSEMI |
![]() Description: Diode: rectifying; THT; 200V; 8Ax2; tube; Ifsm: 100A; TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Heatsink thickness: 1.15...1.39mm Max. load current: 16A Max. forward impulse current: 100A |
на замовлення 76 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
74ACT04MTCX | ONSEMI |
![]() Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Mounting: SMD Case: TSSOP14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: ACT Number of inputs: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
74ACT04SC | ONSEMI |
![]() Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; tube Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Mounting: SMD Case: SO14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: tube Quiescent current: 20µA Family: ACT Number of inputs: 1 |
на замовлення 218 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
74ACT04SCX | ONSEMI |
![]() Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; ACT Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Mounting: SMD Case: SO14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: ACT Number of inputs: 1 |
на замовлення 1742 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
MC74ACT04DR2G | ONSEMI |
![]() Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; reel,tape Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: ACT Number of inputs: 1 |
на замовлення 134 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
MC74ACT04DTR2G | ONSEMI |
![]() Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷6VDC; -40÷85°C; 40uA Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 40µA Family: ACT Number of inputs: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
FCH104N60F | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Power dissipation: 357W Case: TO247 Gate-source voltage: ±20V On-state resistance: 0.104Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 75 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
FCH104N60F-F085 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Power dissipation: 357W Case: TO247 Gate-source voltage: ±20V On-state resistance: 0.104Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
![]() |
AFGB40T65SQDN | ONSEMI |
![]() Description: Transistor: IGBT; 650V; 40A; 119W; D2PAK; automotive industry Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 119W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: SMD Gate charge: 76nC Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
TIP122G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 2W; TO220AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 5A Case: TO220AB Mounting: THT Kind of package: tube Power dissipation: 2W |
на замовлення 532 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
MBR40250G | ONSEMI |
![]() Description: Diode: Schottky rectifying; THT; 250V; 40A; TO220AC; Ufmax: 0.86V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 250V Load current: 40A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 0.86V Max. load current: 80A Max. forward impulse current: 150A Kind of package: tube Heatsink thickness: 1.14...1.39mm |
на замовлення 9 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
MBR40250TG | ONSEMI |
![]() Description: Diode: Schottky rectifying; THT; 250V; 40A; TO220-3; Ufmax: 0.86V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 250V Load current: 40A Semiconductor structure: single diode Case: TO220-3 Max. forward voltage: 0.86V Max. load current: 80A Max. forward impulse current: 150A Kind of package: tube Heatsink thickness: 1.14...1.39mm |
на замовлення 135 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
MJ11015G | ONSEMI |
![]() ![]() Description: Transistor: PNP; bipolar; Darlington; 120V; 30A; 200W; TO3 Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 120V Collector current: 30A Power dissipation: 200W Case: TO3 Mounting: THT Kind of package: in-tray |
на замовлення 91 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
FDP8N50NZ | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; 130W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 4.8A Power dissipation: 130W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.85Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
![]() |
FDA28N50 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 17A; Idm: 112A; 310W; TO3PN Type of transistor: N-MOSFET Technology: DMOS; UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 17A Pulsed drain current: 112A Power dissipation: 310W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 155mΩ Mounting: THT Gate charge: 105nC Kind of package: tube Kind of channel: enhancement |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
1N5359BG | ONSEMI |
![]() ![]() Description: Diode: Zener; 5W; 24V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 24V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N53xxB Leakage current: 0.5µA |
на замовлення 263 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
1N5359BRLG | ONSEMI |
![]() ![]() Description: Diode: Zener; 5W; 24V; reel,tape; CASE017AA; single diode; 0.5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 24V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N53xxB Leakage current: 0.5µA |
на замовлення 3393 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
FST3253MTCX | ONSEMI |
![]() Description: IC: analog switch; bus switch,demultiplexer,multiplexer; Ch: 2 Type of integrated circuit: analog switch Kind of integrated circuit: bus switch; demultiplexer; multiplexer Number of channels: 2 Technology: TTL Mounting: SMD Case: TSSOP16 Supply voltage: 4...5.5V DC Kind of package: reel; tape Operating temperature: -40...85°C Quiescent current: 3µA |
товару немає в наявності |
В кошику од. на суму грн. |
MM74HC373WMX |
![]() |
Виробник: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20-W; HC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...6V DC
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: level-triggered
Manufacturer series: HC
Technology: CMOS
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20-W; HC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...6V DC
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: level-triggered
Manufacturer series: HC
Technology: CMOS
товару немає в наявності
В кошику
од. на суму грн.
BCP68T1G |
![]() |
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 85...375
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 85...375
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
на замовлення 982 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 39.23 грн |
18+ | 21.86 грн |
25+ | 17.21 грн |
50+ | 14.50 грн |
90+ | 10.15 грн |
247+ | 9.61 грн |
SBCP68T1G |
![]() |
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223
Current gain: 50...375
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223
Current gain: 50...375
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
MC74HC4067ADTR2G |
![]() |
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; analog,demultiplexer,multiplexer,switch; Ch: 1; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: analog; demultiplexer; multiplexer; switch
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP24
Manufacturer series: HC
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Operating temperature: -55...125°C
Category: Decoders, multiplexers, switches
Description: IC: digital; analog,demultiplexer,multiplexer,switch; Ch: 1; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: analog; demultiplexer; multiplexer; switch
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP24
Manufacturer series: HC
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Operating temperature: -55...125°C
товару немає в наявності
В кошику
од. на суму грн.
SBC856ALT1G |
![]() |
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
на замовлення 2466 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
19+ | 22.54 грн |
32+ | 12.25 грн |
100+ | 7.67 грн |
211+ | 4.32 грн |
580+ | 4.08 грн |
HUF75332P3 |
![]() |
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 60A; 145W; TO220AB
Drain-source voltage: 55V
Drain current: 60A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 145W
Polarisation: unipolar
Kind of package: tube
Gate charge: 85nC
Technology: UltraFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220AB
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 60A; 145W; TO220AB
Drain-source voltage: 55V
Drain current: 60A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 145W
Polarisation: unipolar
Kind of package: tube
Gate charge: 85nC
Technology: UltraFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220AB
на замовлення 45 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 145.25 грн |
10+ | 110.85 грн |
12+ | 82.17 грн |
31+ | 77.51 грн |
NRVUS2MA |
![]() |
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 1.5A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 1.5A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
BC849BLT1G |
![]() |
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 2975 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 8.35 грн |
79+ | 4.96 грн |
119+ | 3.27 грн |
143+ | 2.72 грн |
571+ | 1.58 грн |
1000+ | 1.53 грн |
1500+ | 1.44 грн |
BAW56LT1G |
![]() |
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Capacitance: 2pF
Max. off-state voltage: 70V
Max. forward voltage: 1.25V
Load current: 0.2A
Semiconductor structure: common anode; double
Reverse recovery time: 6ns
Max. forward impulse current: 4A
Leakage current: 50µA
Type of diode: switching
Features of semiconductor devices: fast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Capacitance: 2pF
Max. off-state voltage: 70V
Max. forward voltage: 1.25V
Load current: 0.2A
Semiconductor structure: common anode; double
Reverse recovery time: 6ns
Max. forward impulse current: 4A
Leakage current: 50µA
Type of diode: switching
Features of semiconductor devices: fast switching
на замовлення 14385 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
89+ | 4.70 грн |
125+ | 3.10 грн |
500+ | 1.57 грн |
849+ | 1.07 грн |
1500+ | 0.99 грн |
3000+ | 0.97 грн |
BAW56LT3G |
![]() |
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
товару немає в наявності
В кошику
од. на суму грн.
MBRA140T3G |
![]() |
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.74V
Kind of package: reel; tape
Max. load current: 2A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.74V
Kind of package: reel; tape
Max. load current: 2A
на замовлення 3152 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 26.71 грн |
21+ | 18.84 грн |
100+ | 11.47 грн |
122+ | 7.44 грн |
336+ | 7.05 грн |
500+ | 6.90 грн |
1000+ | 6.82 грн |
BC517-D74Z |
![]() |
Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 1.2A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 1.2A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
на замовлення 2863 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 29.22 грн |
20+ | 19.77 грн |
100+ | 14.34 грн |
133+ | 6.82 грн |
366+ | 6.43 грн |
1000+ | 6.36 грн |
2000+ | 6.20 грн |
MC1455DR2G |
![]() |
Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: peripheral circuit; astable,monostable,RC timer; 4.5÷16VDC
Type of integrated circuit: peripheral circuit
Kind of integrated circuit: astable; monostable; RC timer
Supply voltage: 4.5...16V DC
Case: SO8
DC supply current: 10mA
Output current: 0.2A
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
Controlled voltage: 10V
Category: Watchdog and reset circuits
Description: IC: peripheral circuit; astable,monostable,RC timer; 4.5÷16VDC
Type of integrated circuit: peripheral circuit
Kind of integrated circuit: astable; monostable; RC timer
Supply voltage: 4.5...16V DC
Case: SO8
DC supply current: 10mA
Output current: 0.2A
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
Controlled voltage: 10V
на замовлення 1620 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 57.60 грн |
12+ | 32.63 грн |
25+ | 26.51 грн |
63+ | 14.65 грн |
171+ | 13.80 грн |
1000+ | 13.25 грн |
MBRS260T3G |
![]() |
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Max. off-state voltage: 60V
Max. forward voltage: 0.55V
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SMB
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Max. off-state voltage: 60V
Max. forward voltage: 0.55V
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SMB
на замовлення 1924 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
17+ | 25.04 грн |
26+ | 15.19 грн |
50+ | 11.86 грн |
100+ | 10.62 грн |
116+ | 7.91 грн |
318+ | 7.44 грн |
1000+ | 7.21 грн |
FCD5N60TM |
![]() |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.9A; 54W; DPAK
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.9A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.9A; 54W; DPAK
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.9A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
FDD5N60NZTM |
![]() |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.4A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.4A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2425 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 63.44 грн |
8+ | 52.24 грн |
22+ | 41.86 грн |
60+ | 40.31 грн |
500+ | 39.14 грн |
FQD5N60CTM |
![]() |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.8A; 49W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.8A
Power dissipation: 49W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.8A; 49W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.8A
Power dissipation: 49W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
FQI5N60CTU |
![]() ![]() |
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.6A; Idm: 18A; 100W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.6A
Pulsed drain current: 18A
Power dissipation: 100W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.6A; Idm: 18A; 100W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.6A
Pulsed drain current: 18A
Power dissipation: 100W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
FQU5N60CTU |
![]() ![]() |
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.8A; Idm: 11.2A; 49W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.8A
Pulsed drain current: 11.2A
Power dissipation: 49W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.8A; Idm: 11.2A; 49W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.8A
Pulsed drain current: 11.2A
Power dissipation: 49W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
FCH25N60N |
![]() ![]() |
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 75A; 216W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Pulsed drain current: 75A
Power dissipation: 216W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 108mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 75A; 216W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Pulsed drain current: 75A
Power dissipation: 216W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 108mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
MOC3051M |
![]() ![]() |
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 600V; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: without zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Output voltage: 600V
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 600V; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: without zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Output voltage: 600V
на замовлення 713 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 75.96 грн |
11+ | 37.59 грн |
29+ | 32.17 грн |
78+ | 30.39 грн |
500+ | 29.53 грн |
2N3773G | ![]() |
![]() |
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 16A; 150W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 16A
Power dissipation: 150W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 200kHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 16A; 150W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 16A
Power dissipation: 150W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 200kHz
на замовлення 68 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 506.71 грн |
3+ | 374.39 грн |
7+ | 354.24 грн |
74VHC245M |
![]() |
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20-W; VHC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: SO20-W
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: tube
Quiescent current: 40µA
Manufacturer series: VHC
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20-W; VHC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: SO20-W
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: tube
Quiescent current: 40µA
Manufacturer series: VHC
товару немає в наявності
В кошику
од. на суму грн.
74VHC245MTCX |
![]() |
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; VHC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Manufacturer series: VHC
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; VHC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Manufacturer series: VHC
на замовлення 637 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 85.15 грн |
10+ | 39.53 грн |
34+ | 26.90 грн |
93+ | 25.42 грн |
250+ | 24.57 грн |
500+ | 24.49 грн |
74VHC245MX |
![]() |
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20-W; VHC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: SO20-W
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
Manufacturer series: VHC
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20-W; VHC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: SO20-W
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
Manufacturer series: VHC
товару немає в наявності
В кошику
од. на суму грн.
FCD380N60E |
![]() |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.4A; 106W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.4A
Power dissipation: 106W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.4A; 106W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.4A
Power dissipation: 106W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
TLV431ALPG |
![]() |
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; TO92; bulk; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: bulk
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; TO92; bulk; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: bulk
Maximum output current: 20mA
товару немає в наявності
В кошику
од. на суму грн.
TLV431ALPRAG |
![]() |
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; TO92; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; TO92; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
на замовлення 1679 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 33.39 грн |
TLV431ASN1T1G |
![]() |
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; SOT23; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; SOT23; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
товару немає в наявності
В кошику
од. на суму грн.
TLV431ASNT1G |
![]() |
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; TSOP5; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: SMD
Case: TSOP5
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; TSOP5; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: SMD
Case: TSOP5
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
на замовлення 2585 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 48.42 грн |
15+ | 27.05 грн |
25+ | 22.01 грн |
63+ | 14.57 грн |
171+ | 13.80 грн |
1000+ | 13.33 грн |
TLV431BLPRAG |
![]() |
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±0.5%; TO92; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±0.5%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±0.5%; TO92; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±0.5%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
на замовлення 376 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 124.38 грн |
9+ | 47.44 грн |
24+ | 38.45 грн |
65+ | 36.35 грн |
250+ | 36.28 грн |
TLV431BSN1T1G |
![]() |
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; SOT23; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; SOT23; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
на замовлення 1764 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 43.41 грн |
16+ | 25.50 грн |
25+ | 21.47 грн |
50+ | 18.91 грн |
78+ | 11.70 грн |
213+ | 11.08 грн |
TLV431BSNT1G |
![]() |
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±0.5%; TSOP5; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±0.5%
Mounting: SMD
Case: TSOP5
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±0.5%; TSOP5; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±0.5%
Mounting: SMD
Case: TSOP5
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
товару немає в наявності
В кошику
од. на суму грн.
TLV431CSN1T1G |
![]() |
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±0.2%; SOT23; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±0.2%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±0.2%; SOT23; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±0.2%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
товару немає в наявності
В кошику
од. на суму грн.
NCP45521IMNTWG-H |
![]() |
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10.5A; Ch: 1; N-Channel; SMD; DFN8
Case: DFN8
Supply voltage: 3...5.5V DC
On-state resistance: 9.5/22.5mΩ
Output current: 10.5A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Active logical level: high
Kind of package: reel; tape
Control voltage: 0.5...13.5V DC
Kind of integrated circuit: high-side
Mounting: SMD
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10.5A; Ch: 1; N-Channel; SMD; DFN8
Case: DFN8
Supply voltage: 3...5.5V DC
On-state resistance: 9.5/22.5mΩ
Output current: 10.5A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Active logical level: high
Kind of package: reel; tape
Control voltage: 0.5...13.5V DC
Kind of integrated circuit: high-side
Mounting: SMD
на замовлення 7 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 143.58 грн |
BD237G |
![]() |
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 2A; 25W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 2A
Power dissipation: 25W
Case: TO225
Mounting: THT
Kind of package: bulk
Current gain: 40
Frequency: 3MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 2A; 25W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 2A
Power dissipation: 25W
Case: TO225
Mounting: THT
Kind of package: bulk
Current gain: 40
Frequency: 3MHz
на замовлення 481 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 108.52 грн |
8+ | 52.24 грн |
25+ | 44.96 грн |
26+ | 35.11 грн |
72+ | 33.25 грн |
FIN1001M5X |
![]() |
Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: digital; differential,line driver,translator; LVDS; 3.6VDC
Supply voltage: 3.6V DC
Type of integrated circuit: digital
Number of channels: 1
Kind of package: reel; tape
Technology: LVDS
Kind of integrated circuit: differential; line driver; translator
Mounting: SMD
Operating temperature: -40...125°C
Case: SOT23-5
Category: Interfaces others - integrated circuits
Description: IC: digital; differential,line driver,translator; LVDS; 3.6VDC
Supply voltage: 3.6V DC
Type of integrated circuit: digital
Number of channels: 1
Kind of package: reel; tape
Technology: LVDS
Kind of integrated circuit: differential; line driver; translator
Mounting: SMD
Operating temperature: -40...125°C
Case: SOT23-5
на замовлення 5780 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 130.22 грн |
10+ | 81.39 грн |
18+ | 51.16 грн |
49+ | 48.83 грн |
250+ | 46.51 грн |
2N6517BU |
![]() |
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 350V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: bulk
Frequency: 40Hz...200MHz
Collector-emitter voltage: 350V
Current gain: 20...200
Collector current: 0.5A
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 350V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: bulk
Frequency: 40Hz...200MHz
Collector-emitter voltage: 350V
Current gain: 20...200
Collector current: 0.5A
на замовлення 5480 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
100+ | 3.97 грн |
240+ | 3.95 грн |
500+ | 3.78 грн |
640+ | 3.74 грн |
2000+ | 3.60 грн |
2N6517TA |
![]() |
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 350V; 0.5A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Frequency: 40...200MHz
Collector-emitter voltage: 350V
Current gain: 30...200
Collector current: 0.5A
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 350V; 0.5A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Frequency: 40...200MHz
Collector-emitter voltage: 350V
Current gain: 30...200
Collector current: 0.5A
на замовлення 1703 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 21.70 грн |
32+ | 12.48 грн |
41+ | 9.61 грн |
100+ | 6.49 грн |
206+ | 4.41 грн |
500+ | 4.40 грн |
565+ | 4.17 грн |
2N6520TA |
![]() |
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 350V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Frequency: 40...200MHz
Collector-emitter voltage: 350V
Current gain: 30...200
Collector current: 0.5A
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 350V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Frequency: 40...200MHz
Collector-emitter voltage: 350V
Current gain: 30...200
Collector current: 0.5A
на замовлення 767 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
23+ | 18.36 грн |
32+ | 12.48 грн |
100+ | 7.85 грн |
213+ | 4.26 грн |
585+ | 4.03 грн |
MMUN2234LT1G |
![]() |
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
на замовлення 3965 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.51 грн |
93+ | 4.19 грн |
147+ | 2.65 грн |
500+ | 1.98 грн |
841+ | 1.08 грн |
2310+ | 1.02 грн |
FJPF13007H2TU |
![]() |
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 40W; TO220FP
Case: TO220FP
Frequency: 4MHz
Collector-emitter voltage: 400V
Current gain: 8...60
Collector current: 8A
Type of transistor: NPN
Power dissipation: 40W
Polarisation: bipolar
Kind of package: tube
Mounting: THT
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 40W; TO220FP
Case: TO220FP
Frequency: 4MHz
Collector-emitter voltage: 400V
Current gain: 8...60
Collector current: 8A
Type of transistor: NPN
Power dissipation: 40W
Polarisation: bipolar
Kind of package: tube
Mounting: THT
товару немає в наявності
В кошику
од. на суму грн.
MUR1620CTG |
![]() |
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; tube; Ifsm: 100A; TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Max. load current: 16A
Max. forward impulse current: 100A
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; tube; Ifsm: 100A; TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Max. load current: 16A
Max. forward impulse current: 100A
на замовлення 76 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 135.23 грн |
10+ | 110.07 грн |
11+ | 82.94 грн |
31+ | 78.29 грн |
74ACT04MTCX |
![]() |
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
Number of inputs: 1
товару немає в наявності
В кошику
од. на суму грн.
74ACT04SC |
![]() |
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 20µA
Family: ACT
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 20µA
Family: ACT
Number of inputs: 1
на замовлення 218 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 44.24 грн |
14+ | 29.30 грн |
35+ | 26.51 грн |
55+ | 24.88 грн |
110+ | 24.11 грн |
74ACT04SCX |
![]() |
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; ACT
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; ACT
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
Number of inputs: 1
на замовлення 1742 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 35.06 грн |
14+ | 27.98 грн |
25+ | 23.64 грн |
41+ | 22.32 грн |
100+ | 21.01 грн |
500+ | 20.31 грн |
MC74ACT04DR2G |
![]() |
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
Number of inputs: 1
на замовлення 134 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 49.25 грн |
12+ | 32.40 грн |
15+ | 26.66 грн |
56+ | 16.43 грн |
100+ | 14.88 грн |
MC74ACT04DTR2G |
![]() |
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷6VDC; -40÷85°C; 40uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: ACT
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷6VDC; -40÷85°C; 40uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: ACT
Number of inputs: 1
товару немає в наявності
В кошику
од. на суму грн.
FCH104N60F |
![]() |
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 357W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.104Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 357W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.104Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 75 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 547.61 грн |
3+ | 350.36 грн |
8+ | 331.76 грн |
FCH104N60F-F085 |
![]() |
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 357W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.104Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Application: automotive industry
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 357W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.104Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
AFGB40T65SQDN |
![]() |
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; D2PAK; automotive industry
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 119W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: SMD
Gate charge: 76nC
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; D2PAK; automotive industry
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 119W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: SMD
Gate charge: 76nC
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: integrated anti-parallel diode
товару немає в наявності
В кошику
од. на суму грн.
TIP122G |
![]() |
Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 5A
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 2W
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 5A
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 2W
на замовлення 532 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 52.59 грн |
11+ | 36.20 грн |
35+ | 26.66 грн |
94+ | 25.19 грн |
100+ | 23.87 грн |
250+ | 19.77 грн |
500+ | 19.38 грн |
MBR40250G |
![]() |
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 250V; 40A; TO220AC; Ufmax: 0.86V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 250V
Load current: 40A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.86V
Max. load current: 80A
Max. forward impulse current: 150A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 250V; 40A; TO220AC; Ufmax: 0.86V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 250V
Load current: 40A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.86V
Max. load current: 80A
Max. forward impulse current: 150A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
на замовлення 9 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 143.58 грн |
MBR40250TG |
![]() |
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 250V; 40A; TO220-3; Ufmax: 0.86V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 250V
Load current: 40A
Semiconductor structure: single diode
Case: TO220-3
Max. forward voltage: 0.86V
Max. load current: 80A
Max. forward impulse current: 150A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 250V; 40A; TO220-3; Ufmax: 0.86V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 250V
Load current: 40A
Semiconductor structure: single diode
Case: TO220-3
Max. forward voltage: 0.86V
Max. load current: 80A
Max. forward impulse current: 150A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
на замовлення 135 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 179.48 грн |
10+ | 95.34 грн |
27+ | 89.92 грн |
100+ | 89.14 грн |
MJ11015G | ![]() |
![]() |
Виробник: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 120V; 30A; 200W; TO3
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 120V
Collector current: 30A
Power dissipation: 200W
Case: TO3
Mounting: THT
Kind of package: in-tray
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 120V; 30A; 200W; TO3
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 120V
Collector current: 30A
Power dissipation: 200W
Case: TO3
Mounting: THT
Kind of package: in-tray
на замовлення 91 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 719.57 грн |
2+ | 479.04 грн |
6+ | 452.68 грн |
FDP8N50NZ |
![]() |
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; 130W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.8A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; 130W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.8A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
FDA28N50 |
![]() |
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 17A; Idm: 112A; 310W; TO3PN
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 17A
Pulsed drain current: 112A
Power dissipation: 310W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 155mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 17A; Idm: 112A; 310W; TO3PN
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 17A
Pulsed drain current: 112A
Power dissipation: 310W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 155mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 10 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 349.77 грн |
5+ | 210.06 грн |
1N5359BG | ![]() |
![]() |
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 24V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 24V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Leakage current: 0.5µA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 24V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 24V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Leakage current: 0.5µA
на замовлення 263 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 35.06 грн |
19+ | 21.32 грн |
50+ | 17.29 грн |
69+ | 13.33 грн |
188+ | 12.56 грн |
1N5359BRLG | ![]() |
![]() |
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 24V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 24V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Leakage current: 0.5µA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 24V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 24V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Leakage current: 0.5µA
на замовлення 3393 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 37.56 грн |
17+ | 23.02 грн |
50+ | 19.07 грн |
71+ | 12.79 грн |
195+ | 12.09 грн |
1000+ | 11.94 грн |
2000+ | 11.63 грн |
FST3253MTCX |
![]() |
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: analog switch; bus switch,demultiplexer,multiplexer; Ch: 2
Type of integrated circuit: analog switch
Kind of integrated circuit: bus switch; demultiplexer; multiplexer
Number of channels: 2
Technology: TTL
Mounting: SMD
Case: TSSOP16
Supply voltage: 4...5.5V DC
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 3µA
Category: Decoders, multiplexers, switches
Description: IC: analog switch; bus switch,demultiplexer,multiplexer; Ch: 2
Type of integrated circuit: analog switch
Kind of integrated circuit: bus switch; demultiplexer; multiplexer
Number of channels: 2
Technology: TTL
Mounting: SMD
Case: TSSOP16
Supply voltage: 4...5.5V DC
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 3µA
товару немає в наявності
В кошику
од. на суму грн.