Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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MMDL301T1G | ONSEMI |
![]() Description: Diode: Schottky switching; SOD323; SMD; 30V; reel,tape; 200mW Type of diode: Schottky switching Semiconductor structure: single diode Mounting: SMD Case: SOD323 Capacitance: 1.5pF Max. off-state voltage: 30V Max. forward voltage: 0.6V Power dissipation: 0.2W Kind of package: reel; tape |
на замовлення 315 шт: термін постачання 21-30 дні (днів) |
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KSA708YBU | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 60V; 0.7A; 0.8W; TO92 Collector-emitter voltage: 60V Current gain: 120...240 Collector current: 0.7A Type of transistor: PNP Case: TO92 Power dissipation: 0.8W Polarisation: bipolar Mounting: THT Kind of package: bulk Frequency: 50MHz |
на замовлення 9958 шт: термін постачання 21-30 дні (днів) |
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BC846BLT3G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NRVBA140NT3G | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.74V Max. forward impulse current: 30A Kind of package: reel; tape Max. load current: 2A Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
FSDM0465REWDTU | ONSEMI |
![]() Description: IC: PMIC; AC/DC switcher,PWM controller; 1.4A; 650V; 66kHz; Ch: 1 Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 1.4A Output voltage: 650V Frequency: 66kHz Number of channels: 1 Case: TO220F-6L Mounting: THT Operating temperature: -25...85°C Topology: flyback Input voltage: 85...265V On-state resistance: 2.6Ω Duty cycle factor: 77...87% Power: 48W Application: SMPS Operating voltage: 8...19V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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74LCX244WM | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20-W Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Mounting: SMD Case: SO20-W Manufacturer series: LCX Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: tube Quiescent current: 10µA |
на замовлення 46 шт: термін постачання 21-30 дні (днів) |
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MC74LCX244DWG | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20 Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Mounting: SMD Case: SO20 Manufacturer series: LCX Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of output: 3-state |
на замовлення 608 шт: термін постачання 21-30 дні (днів) |
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MC74LCX244DTG | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20 Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Mounting: SMD Case: TSSOP20 Manufacturer series: LCX Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of output: 3-state Kind of package: tube Quiescent current: 10µA |
на замовлення 91 шт: термін постачання 21-30 дні (днів) |
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74LCX244BQX | ONSEMI |
![]() ![]() Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; WQFN20 Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Mounting: SMD Case: WQFN20 Manufacturer series: LCX Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: reel; tape Quiescent current: 10µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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74LCX244WMX | ONSEMI |
![]() ![]() ![]() Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20 Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Mounting: SMD Case: SO20 Manufacturer series: LCX Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of output: 3-state |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC74LCX244DTR2G | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20 Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Mounting: SMD Case: TSSOP20 Manufacturer series: LCX Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of output: 3-state |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
NSR201MXT5G | ONSEMI |
![]() Description: Diode: Schottky switching; X2DFN2; SMD; 2V; 50mA; reel,tape Type of diode: Schottky switching Case: X2DFN2 Mounting: SMD Max. off-state voltage: 2V Load current: 50mA Semiconductor structure: single diode Max. forward voltage: 0.32V Kind of package: reel; tape Capacitance: 0.15pF |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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LMV339DTBR2G | ONSEMI |
![]() Description: IC: comparator; universal; Cmp: 4; 2.7÷5V; SMT; TSSOP14; reel,tape Type of integrated circuit: comparator Operating temperature: -40...85°C Case: TSSOP14 Operating voltage: 2.7...5V Number of comparators: 4 Input offset voltage: 9mV Kind of package: reel; tape Kind of comparator: universal Input offset current: 1nA Input bias current: 1nA Mounting: SMT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2SA2016-TD-E | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 50V; 7A; 1.3W; SOT89 Mounting: SMD Type of transistor: PNP Power dissipation: 1.3W Polarisation: bipolar Kind of package: reel; tape Case: SOT89 Frequency: 290MHz Collector-emitter voltage: 50V Current gain: 200...560 Collector current: 7A |
на замовлення 800 шт: термін постачання 21-30 дні (днів) |
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1SMB5927BT3G | ONSEMI |
![]() Description: Diode: Zener; 3W; 12V; SMD; reel,tape; SMB; single diode Case: SMB Tolerance: ±5% Semiconductor structure: single diode Zener voltage: 12V Power dissipation: 3W Kind of package: reel; tape Type of diode: Zener Manufacturer series: 1SMB59xxBT3G Mounting: SMD |
на замовлення 2479 шт: термін постачання 21-30 дні (днів) |
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ESD9B5.0ST5G | ONSEMI |
![]() Description: Diode: TVS; 0.3W; 7.8V; 15A; bidirectional; SOD923; reel,tape; ESD Case: SOD923 Max. off-state voltage: 5V Semiconductor structure: bidirectional Max. forward impulse current: 15A Breakdown voltage: 7.8V Leakage current: 0.1µA Kind of package: reel; tape Type of diode: TVS Version: ESD Peak pulse power dissipation: 0.3W Mounting: SMD |
на замовлення 12813 шт: термін постачання 21-30 дні (днів) |
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SZESD9B5.0ST5G | ONSEMI |
![]() Description: Diode: TVS; 5.8÷7.8V; bidirectional; SOD923F; reel,tape Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 5.8...7.8V Semiconductor structure: bidirectional Case: SOD923F Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
MMBFJ177 | ONSEMI |
![]() Description: Transistor: P-JFET; unipolar; 1.5mA; 0.225W; SOT23; Igt: 50mA Type of transistor: P-JFET Polarisation: unipolar Drain current: 1.5mA Power dissipation: 0.225W Case: SOT23 On-state resistance: 300Ω Mounting: SMD Kind of package: reel; tape Gate current: 50mA Gate-source voltage: 30V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FCH125N65S3R0-F155 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 15A; Idm: 60A; 181W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 15A Pulsed drain current: 60A Power dissipation: 181W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.105Ω Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FOD3125 | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV Case: DIP8 Slew rate: 50kV/μs Max. off-state voltage: 5V Output voltage: 0...35V Turn-off time: 60ns Turn-on time: 60ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MUN5112DW1T1G | ONSEMI |
![]() Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 22kΩ Collector-emitter voltage: 50V Collector current: 0.1A Type of transistor: PNP x2 Power dissipation: 0.187W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 22kΩ Base-emitter resistor: 22kΩ Mounting: SMD Case: SC70-6; SC88; SOT363 |
на замовлення 2499 шт: термін постачання 21-30 дні (днів) |
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74ACT32MTCX | ONSEMI |
![]() Description: IC: digital; OR; Ch: 4; IN: 2; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C; ACT Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: ACT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74ACT32SCX | ONSEMI |
![]() Description: IC: digital; OR; Ch: 4; IN: 2; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; ACT Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: SO14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: ACT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC74ACT32DR2G | ONSEMI |
![]() ![]() Description: IC: digital; OR; Ch: 4; IN: 2; SMD; SO14; 2÷6VDC; -40÷85°C; reel,tape Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: ACT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC74ACT32DTR2G | ONSEMI |
![]() Description: IC: digital; OR; Ch: 4; IN: 2; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C; 40uA Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 40µA Family: ACT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
CAT25256VI-GT3 | ONSEMI |
![]() Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: SPI Memory organisation: 32kx8bit Operating voltage: 1.8...5.5V Clock frequency: 20MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...85°C Access time: 40ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FQD12N20LTM-F085 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 55W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 5.7A Pulsed drain current: 36A Power dissipation: 55W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2N5038G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 150V; 20A; 140W; TO3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 20A Case: TO3 Mounting: THT Frequency: 60MHz Power: 140W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDP42AN15A0 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 24A; 150W; TO220AB Mounting: THT On-state resistance: 0.107Ω Type of transistor: N-MOSFET Power dissipation: 150W Polarisation: unipolar Kind of package: tube Gate charge: 39nC Technology: PowerTrench® Kind of channel: enhancement Gate-source voltage: ±20V Case: TO220AB Drain-source voltage: 150V Drain current: 24A |
на замовлення 42 шт: термін постачання 21-30 дні (днів) |
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SZMMBZ20VALT1G | ONSEMI |
![]() Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SOT23; ±5% Type of diode: TVS array Breakdown voltage: 20V Max. forward impulse current: 1.4A Peak pulse power dissipation: 40W Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 17V Kind of package: reel; tape Application: automotive industry Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MC100EP52DTG | ONSEMI |
![]() Description: IC: digital; D flip-flop; Ch: 1; SMD; TSSOP8; tube; OUT: ECL Type of integrated circuit: digital Mounting: SMD Number of channels: 1 Case: TSSOP8 Operating temperature: -40...85°C Kind of package: tube Kind of output: ECL Trigger: positive-edge-triggered Kind of integrated circuit: D flip-flop Supply voltage: 3.3...5V DC |
на замовлення 41 шт: термін постачання 21-30 дні (днів) |
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KSE44H11 | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 50W Case: TO220AB Mounting: THT Kind of package: bulk Frequency: 50MHz Pulsed collector current: 20A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
BAW56M3T5G | ONSEMI |
![]() Description: Diode: switching; SMD; 75V; 0.2A; 6ns; SOT723; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: common anode; double Case: SOT723 Kind of package: reel; tape Features of semiconductor devices: small signal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FDMC86570LET60 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 62A; Idm: 436A; 65W; Power33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 62A Pulsed drain current: 436A Power dissipation: 65W Case: Power33 Gate-source voltage: ±20V On-state resistance: 6.9mΩ Mounting: SMD Gate charge: 88nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FDMC86324 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 20A; 41W; PQFN8 Case: PQFN8 Drain-source voltage: 80V Drain current: 20A On-state resistance: 40mΩ Type of transistor: N-MOSFET Power dissipation: 41W Polarisation: unipolar Kind of package: reel; tape Gate charge: 18nC Technology: PowerTrench® Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
FDMC86320 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 50A; 40W; Power33 Case: Power33 Drain-source voltage: 80V Drain current: 22A On-state resistance: 18mΩ Type of transistor: N-MOSFET Power dissipation: 40W Polarisation: unipolar Kind of package: reel; tape Gate charge: 41nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 50A Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
KSD1588YTU | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 60V; 7A; 30W; TO220FP Collector-emitter voltage: 60V Current gain: 100...200 Collector current: 7A Pulsed collector current: 15A Type of transistor: NPN Power dissipation: 30W Polarisation: bipolar Kind of package: tube Mounting: THT Case: TO220FP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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KSD1692YS | ONSEMI |
![]() Description: Transistor: NPN; bipolar; Darlington; 100V; 3A; 15W; TO126ISO Collector-emitter voltage: 100V Current gain: 4000...12000 Collector current: 3A Type of transistor: NPN Power dissipation: 15W Polarisation: bipolar Kind of package: tube Kind of transistor: Darlington Mounting: THT Case: TO126ISO |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FQPF16N25C | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 9.8A; Idm: 62.4A; 43W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 9.8A Pulsed drain current: 62.4A Power dissipation: 43W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.27Ω Mounting: THT Gate charge: 53.5nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC74LCX16244DTG | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; SMD; LCX Case: TSSOP48 Mounting: SMD Manufacturer series: LCX Kind of integrated circuit: buffer; line driver; non-inverting Supply voltage: 2...3.6V DC Type of integrated circuit: digital Number of channels: 16 Kind of output: 3-state Operating temperature: -40...85°C |
на замовлення 23 шт: термін постачання 21-30 дні (днів) |
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74LCX16244MTD | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; SMD; LCX Case: TSSOP48 Mounting: SMD Manufacturer series: LCX Kind of integrated circuit: buffer; line driver; non-inverting Part status: Not recommended for new designs Supply voltage: 2...3.6V DC Type of integrated circuit: digital Number of channels: 16 Quiescent current: 20µA Kind of output: 3-state Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC74LVXC3245DTRG | ONSEMI |
![]() Description: IC: digital; bidirectional,transceiver,translator; Ch: 8; SMD Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver; translator Number of channels: 8 Supply voltage: 2.3...5.5V DC Mounting: SMD Case: TSSOP24 Operating temperature: -40...85°C Kind of package: reel; tape Manufacturer series: LVX Quiescent current: 50µA Kind of output: 3-state |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDN337N | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 2.2A; 0.5W; SuperSOT-3 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.2A Power dissipation: 0.5W Case: SuperSOT-3 Gate-source voltage: ±8V On-state resistance: 80mΩ Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level |
на замовлення 4523 шт: термін постачання 21-30 дні (днів) |
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SB5100 | ONSEMI |
![]() ![]() ![]() Description: Diode: Schottky rectifying; THT; 100V; 5A; DO201; 5W; reel,tape Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 5A Semiconductor structure: single diode Case: DO201 Max. forward impulse current: 150A Capacitance: 380pF Kind of package: reel; tape Power dissipation: 5W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDPF12N50T | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; 42W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 42W Case: TO220FP Mounting: THT Kind of package: tube Gate charge: 30nC Technology: UniFET™ Kind of channel: enhancement Gate-source voltage: ±30V Drain-source voltage: 500V Drain current: 6.9A On-state resistance: 0.65Ω |
на замовлення 217 шт: термін постачання 21-30 дні (днів) |
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MOC3073M | ONSEMI |
![]() Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3073M Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 800V Kind of output: triac; without zero voltage crossing driver Case: DIP6 Max. off-state voltage: 3V Trigger current: 6mA Mounting: THT Number of channels: 1 Manufacturer series: MOC3073M |
на замовлення 398 шт: термін постачання 21-30 дні (днів) |
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FSL146MRBN | ONSEMI |
![]() Description: IC: PMIC; PWM controller; 1.5A; 650V; 67kHz; Ch: 1; DIP8; flyback Output voltage: 650V Power: 26W Operating temperature: -40...125°C Number of channels: 1 Mounting: THT Duty cycle factor: 61...73% Kind of integrated circuit: PWM controller Topology: flyback Input voltage: 85...265V Case: DIP8 Operating voltage: 7.5...24.5V DC Frequency: 67kHz On-state resistance: 2.6Ω Output current: 1.5A Type of integrated circuit: PMIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDB3652 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 61A; 150W; D2PAK Mounting: SMD Case: D2PAK Kind of package: reel; tape Type of transistor: N-MOSFET Power dissipation: 150W Polarisation: unipolar Gate charge: 53nC Technology: PowerTrench® Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 61A On-state resistance: 43mΩ |
на замовлення 408 шт: термін постачання 21-30 дні (днів) |
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TIP121G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; Darlington; 80V; 5A; 2W; TO220AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 80V Collector current: 5A Power dissipation: 2W Case: TO220AB Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMSZ4684T1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode Mounting: SMD Case: SOD123 Tolerance: ±5% Semiconductor structure: single diode Zener voltage: 3.3V Leakage current: 7.5µA Power dissipation: 0.5W Kind of package: reel; tape Type of diode: Zener Manufacturer series: MMSZ4xxT1G |
на замовлення 7219 шт: термін постачання 21-30 дні (днів) |
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NCP3232NMNTXG | ONSEMI |
![]() Description: IC: PMIC; QFN40; buck; 4.5÷23VDC Case: QFN40 Mounting: SMD Number of channels: 1 Operating temperature: -40...125°C Topology: buck Frequency: 450...550kHz Operating voltage: 4.5...23V DC Output current: 15A Type of integrated circuit: PMIC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MC74VHCT125ADR2G | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; VHCT; 40uA Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of output: 3-state Quiescent current: 40µA Kind of package: reel; tape Manufacturer series: VHCT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
FDLL4150 | ONSEMI |
![]() Description: Diode: switching; SMD; 50V; 0.4A; 6ns; SOD80; reel,tape Semiconductor structure: single diode Load current: 0.4A Max. off-state voltage: 50V Case: SOD80 Kind of package: reel; tape Type of diode: switching Features of semiconductor devices: small signal Mounting: SMD Reverse recovery time: 6ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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2N5192G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 80V; 4A; 40W; TO225 Case: TO225 Frequency: 2MHz Collector-emitter voltage: 80V Current gain: 20...80 Collector current: 4A Type of transistor: NPN Power dissipation: 40W Polarisation: bipolar Kind of package: bulk Mounting: THT |
на замовлення 483 шт: термін постачання 21-30 дні (днів) |
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2N5191G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 60V; 4A; 40W; TO225 Case: TO225 Frequency: 2MHz Collector-emitter voltage: 60V Current gain: 25...100 Collector current: 4A Type of transistor: NPN Power dissipation: 40W Polarisation: bipolar Kind of package: bulk Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
SZBZX84C3V3LT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode; 5uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 3.3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 5µA Manufacturer series: BZX84C Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SZBZX84C3V3ET1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 3.3V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84CxxET1G Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FSA2467MPX | ONSEMI |
![]() Description: IC: analog switch; Ch: 4; MLP16; 1.65÷4.3VDC; reel,tape; 500nA Supply voltage: 1.65...4.3V DC Type of integrated circuit: analog switch Number of channels: 4 Quiescent current: 500nA Kind of output: DPDT x2 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Case: MLP16 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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H11G1M | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 100V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 2.5kV Case: DIP6 Turn-off time: 0.1ms CTR@If: 100%@10mA Collector-emitter voltage: 100V Turn-on time: 5µs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NJW21194G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 250V; 16A; 200W; TO3P Mounting: THT Case: TO3P Frequency: 4MHz Collector-emitter voltage: 250V Current gain: 20...70 Collector current: 16A Type of transistor: NPN Application: automotive industry Power dissipation: 200W Polarisation: bipolar Kind of package: tube |
на замовлення 123 шт: термін постачання 21-30 дні (днів) |
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MMDL301T1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; reel,tape; 200mW
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Case: SOD323
Capacitance: 1.5pF
Max. off-state voltage: 30V
Max. forward voltage: 0.6V
Power dissipation: 0.2W
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; reel,tape; 200mW
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Case: SOD323
Capacitance: 1.5pF
Max. off-state voltage: 30V
Max. forward voltage: 0.6V
Power dissipation: 0.2W
Kind of package: reel; tape
на замовлення 315 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
28+ | 14.82 грн |
40+ | 9.79 грн |
49+ | 7.95 грн |
77+ | 4.98 грн |
100+ | 4.14 грн |
250+ | 3.33 грн |
KSA708YBU |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.7A; 0.8W; TO92
Collector-emitter voltage: 60V
Current gain: 120...240
Collector current: 0.7A
Type of transistor: PNP
Case: TO92
Power dissipation: 0.8W
Polarisation: bipolar
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.7A; 0.8W; TO92
Collector-emitter voltage: 60V
Current gain: 120...240
Collector current: 0.7A
Type of transistor: PNP
Case: TO92
Power dissipation: 0.8W
Polarisation: bipolar
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
на замовлення 9958 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
23+ | 18.11 грн |
40+ | 9.56 грн |
57+ | 6.73 грн |
100+ | 5.86 грн |
197+ | 4.58 грн |
542+ | 4.33 грн |
5000+ | 4.22 грн |
BC846BLT3G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
товару немає в наявності
В кошику
од. на суму грн.
NRVBA140NT3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.74V
Max. forward impulse current: 30A
Kind of package: reel; tape
Max. load current: 2A
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.74V
Max. forward impulse current: 30A
Kind of package: reel; tape
Max. load current: 2A
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
FSDM0465REWDTU |
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Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 1.4A; 650V; 66kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 1.4A
Output voltage: 650V
Frequency: 66kHz
Number of channels: 1
Case: TO220F-6L
Mounting: THT
Operating temperature: -25...85°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 2.6Ω
Duty cycle factor: 77...87%
Power: 48W
Application: SMPS
Operating voltage: 8...19V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 1.4A; 650V; 66kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 1.4A
Output voltage: 650V
Frequency: 66kHz
Number of channels: 1
Case: TO220F-6L
Mounting: THT
Operating temperature: -25...85°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 2.6Ω
Duty cycle factor: 77...87%
Power: 48W
Application: SMPS
Operating voltage: 8...19V DC
товару немає в наявності
В кошику
од. на суму грн.
74LCX244WM |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20-W
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: SO20-W
Manufacturer series: LCX
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: tube
Quiescent current: 10µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20-W
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: SO20-W
Manufacturer series: LCX
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: tube
Quiescent current: 10µA
на замовлення 46 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 115.26 грн |
10+ | 63.15 грн |
21+ | 43.58 грн |
MC74LCX244DWG |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: SO20
Manufacturer series: LCX
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: SO20
Manufacturer series: LCX
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
на замовлення 608 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 127.61 грн |
10+ | 72.01 грн |
21+ | 44.26 грн |
57+ | 41.82 грн |
532+ | 40.21 грн |
MC74LCX244DTG |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: tube
Quiescent current: 10µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: tube
Quiescent current: 10µA
на замовлення 91 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 112.79 грн |
10+ | 60.24 грн |
25+ | 49.16 грн |
29+ | 32.03 грн |
78+ | 30.27 грн |
74LCX244BQX |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; WQFN20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: WQFN20
Manufacturer series: LCX
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 10µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; WQFN20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: WQFN20
Manufacturer series: LCX
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 10µA
товару немає в наявності
В кошику
од. на суму грн.
74LCX244WMX | ![]() |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: SO20
Manufacturer series: LCX
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: SO20
Manufacturer series: LCX
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
товару немає в наявності
В кошику
од. на суму грн.
MC74LCX244DTR2G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
товару немає в наявності
В кошику
од. на суму грн.
NSR201MXT5G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; X2DFN2; SMD; 2V; 50mA; reel,tape
Type of diode: Schottky switching
Case: X2DFN2
Mounting: SMD
Max. off-state voltage: 2V
Load current: 50mA
Semiconductor structure: single diode
Max. forward voltage: 0.32V
Kind of package: reel; tape
Capacitance: 0.15pF
Category: SMD Schottky diodes
Description: Diode: Schottky switching; X2DFN2; SMD; 2V; 50mA; reel,tape
Type of diode: Schottky switching
Case: X2DFN2
Mounting: SMD
Max. off-state voltage: 2V
Load current: 50mA
Semiconductor structure: single diode
Max. forward voltage: 0.32V
Kind of package: reel; tape
Capacitance: 0.15pF
товару немає в наявності
В кошику
од. на суму грн.
LMV339DTBR2G |
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Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 2.7÷5V; SMT; TSSOP14; reel,tape
Type of integrated circuit: comparator
Operating temperature: -40...85°C
Case: TSSOP14
Operating voltage: 2.7...5V
Number of comparators: 4
Input offset voltage: 9mV
Kind of package: reel; tape
Kind of comparator: universal
Input offset current: 1nA
Input bias current: 1nA
Mounting: SMT
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 2.7÷5V; SMT; TSSOP14; reel,tape
Type of integrated circuit: comparator
Operating temperature: -40...85°C
Case: TSSOP14
Operating voltage: 2.7...5V
Number of comparators: 4
Input offset voltage: 9mV
Kind of package: reel; tape
Kind of comparator: universal
Input offset current: 1nA
Input bias current: 1nA
Mounting: SMT
товару немає в наявності
В кошику
од. на суму грн.
2SA2016-TD-E |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 7A; 1.3W; SOT89
Mounting: SMD
Type of transistor: PNP
Power dissipation: 1.3W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
Frequency: 290MHz
Collector-emitter voltage: 50V
Current gain: 200...560
Collector current: 7A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 7A; 1.3W; SOT89
Mounting: SMD
Type of transistor: PNP
Power dissipation: 1.3W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
Frequency: 290MHz
Collector-emitter voltage: 50V
Current gain: 200...560
Collector current: 7A
на замовлення 800 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 67.51 грн |
10+ | 43.96 грн |
29+ | 31.57 грн |
78+ | 29.82 грн |
500+ | 28.97 грн |
1SMB5927BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 12V; SMD; reel,tape; SMB; single diode
Case: SMB
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 12V
Power dissipation: 3W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: 1SMB59xxBT3G
Mounting: SMD
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 12V; SMD; reel,tape; SMB; single diode
Case: SMB
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 12V
Power dissipation: 3W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: 1SMB59xxBT3G
Mounting: SMD
на замовлення 2479 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 23.05 грн |
27+ | 14.37 грн |
50+ | 10.09 грн |
100+ | 8.64 грн |
140+ | 6.42 грн |
385+ | 6.12 грн |
650+ | 6.04 грн |
1000+ | 5.96 грн |
ESD9B5.0ST5G |
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Виробник: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.3W; 7.8V; 15A; bidirectional; SOD923; reel,tape; ESD
Case: SOD923
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Max. forward impulse current: 15A
Breakdown voltage: 7.8V
Leakage current: 0.1µA
Kind of package: reel; tape
Type of diode: TVS
Version: ESD
Peak pulse power dissipation: 0.3W
Mounting: SMD
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.3W; 7.8V; 15A; bidirectional; SOD923; reel,tape; ESD
Case: SOD923
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Max. forward impulse current: 15A
Breakdown voltage: 7.8V
Leakage current: 0.1µA
Kind of package: reel; tape
Type of diode: TVS
Version: ESD
Peak pulse power dissipation: 0.3W
Mounting: SMD
на замовлення 12813 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.41 грн |
82+ | 4.66 грн |
182+ | 2.10 грн |
635+ | 1.42 грн |
1745+ | 1.35 грн |
2000+ | 1.31 грн |
8000+ | 1.29 грн |
SZESD9B5.0ST5G |
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Виробник: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.8÷7.8V; bidirectional; SOD923F; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.8...7.8V
Semiconductor structure: bidirectional
Case: SOD923F
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.8÷7.8V; bidirectional; SOD923F; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.8...7.8V
Semiconductor structure: bidirectional
Case: SOD923F
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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MMBFJ177 |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 1.5mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 1.5mA
Power dissipation: 0.225W
Case: SOT23
On-state resistance: 300Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Gate-source voltage: 30V
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 1.5mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 1.5mA
Power dissipation: 0.225W
Case: SOT23
On-state resistance: 300Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Gate-source voltage: 30V
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FCH125N65S3R0-F155 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; Idm: 60A; 181W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; Idm: 60A; 181W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
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FOD3125 |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Slew rate: 50kV/μs
Max. off-state voltage: 5V
Output voltage: 0...35V
Turn-off time: 60ns
Turn-on time: 60ns
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Slew rate: 50kV/μs
Max. off-state voltage: 5V
Output voltage: 0...35V
Turn-off time: 60ns
Turn-on time: 60ns
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MUN5112DW1T1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 22kΩ
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP x2
Power dissipation: 0.187W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 22kΩ
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP x2
Power dissipation: 0.187W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
на замовлення 2499 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
45+ | 10.04 грн |
100+ | 5.01 грн |
240+ | 3.84 грн |
660+ | 3.62 грн |
74ACT32MTCX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C; ACT
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C; ACT
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
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74ACT32SCX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; ACT
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; ACT
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
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MC74ACT32DR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; SO14; 2÷6VDC; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; SO14; 2÷6VDC; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
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MC74ACT32DTR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C; 40uA
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: ACT
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C; 40uA
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: ACT
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CAT25256VI-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
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FQD12N20LTM-F085 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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2N5038G |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 150V; 20A; 140W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 20A
Case: TO3
Mounting: THT
Frequency: 60MHz
Power: 140W
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 150V; 20A; 140W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 20A
Case: TO3
Mounting: THT
Frequency: 60MHz
Power: 140W
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FDP42AN15A0 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 24A; 150W; TO220AB
Mounting: THT
On-state resistance: 0.107Ω
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Kind of package: tube
Gate charge: 39nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: TO220AB
Drain-source voltage: 150V
Drain current: 24A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 24A; 150W; TO220AB
Mounting: THT
On-state resistance: 0.107Ω
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Kind of package: tube
Gate charge: 39nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: TO220AB
Drain-source voltage: 150V
Drain current: 24A
на замовлення 42 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 205.00 грн |
9+ | 108.56 грн |
23+ | 102.44 грн |
SZMMBZ20VALT1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 20V
Max. forward impulse current: 1.4A
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 17V
Kind of package: reel; tape
Application: automotive industry
Tolerance: ±5%
Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 20V
Max. forward impulse current: 1.4A
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 17V
Kind of package: reel; tape
Application: automotive industry
Tolerance: ±5%
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MC100EP52DTG |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; SMD; TSSOP8; tube; OUT: ECL
Type of integrated circuit: digital
Mounting: SMD
Number of channels: 1
Case: TSSOP8
Operating temperature: -40...85°C
Kind of package: tube
Kind of output: ECL
Trigger: positive-edge-triggered
Kind of integrated circuit: D flip-flop
Supply voltage: 3.3...5V DC
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; SMD; TSSOP8; tube; OUT: ECL
Type of integrated circuit: digital
Mounting: SMD
Number of channels: 1
Case: TSSOP8
Operating temperature: -40...85°C
Kind of package: tube
Kind of output: ECL
Trigger: positive-edge-triggered
Kind of integrated circuit: D flip-flop
Supply voltage: 3.3...5V DC
на замовлення 41 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 669.34 грн |
2+ | 514.50 грн |
5+ | 486.21 грн |
KSE44H11 |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
Pulsed collector current: 20A
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
Pulsed collector current: 20A
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BAW56M3T5G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 6ns; SOT723; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Case: SOT723
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 6ns; SOT723; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Case: SOT723
Kind of package: reel; tape
Features of semiconductor devices: small signal
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FDMC86570LET60 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 62A; Idm: 436A; 65W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 62A
Pulsed drain current: 436A
Power dissipation: 65W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 6.9mΩ
Mounting: SMD
Gate charge: 88nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 62A; Idm: 436A; 65W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 62A
Pulsed drain current: 436A
Power dissipation: 65W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 6.9mΩ
Mounting: SMD
Gate charge: 88nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMC86324 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 20A; 41W; PQFN8
Case: PQFN8
Drain-source voltage: 80V
Drain current: 20A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 18nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 20A; 41W; PQFN8
Case: PQFN8
Drain-source voltage: 80V
Drain current: 20A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 18nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
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FDMC86320 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 50A; 40W; Power33
Case: Power33
Drain-source voltage: 80V
Drain current: 22A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Power dissipation: 40W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 41nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 50A; 40W; Power33
Case: Power33
Drain-source voltage: 80V
Drain current: 22A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Power dissipation: 40W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 41nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
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KSD1588YTU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 7A; 30W; TO220FP
Collector-emitter voltage: 60V
Current gain: 100...200
Collector current: 7A
Pulsed collector current: 15A
Type of transistor: NPN
Power dissipation: 30W
Polarisation: bipolar
Kind of package: tube
Mounting: THT
Case: TO220FP
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 7A; 30W; TO220FP
Collector-emitter voltage: 60V
Current gain: 100...200
Collector current: 7A
Pulsed collector current: 15A
Type of transistor: NPN
Power dissipation: 30W
Polarisation: bipolar
Kind of package: tube
Mounting: THT
Case: TO220FP
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KSD1692YS |
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Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 3A; 15W; TO126ISO
Collector-emitter voltage: 100V
Current gain: 4000...12000
Collector current: 3A
Type of transistor: NPN
Power dissipation: 15W
Polarisation: bipolar
Kind of package: tube
Kind of transistor: Darlington
Mounting: THT
Case: TO126ISO
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 3A; 15W; TO126ISO
Collector-emitter voltage: 100V
Current gain: 4000...12000
Collector current: 3A
Type of transistor: NPN
Power dissipation: 15W
Polarisation: bipolar
Kind of package: tube
Kind of transistor: Darlington
Mounting: THT
Case: TO126ISO
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FQPF16N25C |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 9.8A; Idm: 62.4A; 43W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 9.8A
Pulsed drain current: 62.4A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 53.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 9.8A; Idm: 62.4A; 43W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 9.8A
Pulsed drain current: 62.4A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 53.5nC
Kind of package: tube
Kind of channel: enhancement
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MC74LCX16244DTG |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; SMD; LCX
Case: TSSOP48
Mounting: SMD
Manufacturer series: LCX
Kind of integrated circuit: buffer; line driver; non-inverting
Supply voltage: 2...3.6V DC
Type of integrated circuit: digital
Number of channels: 16
Kind of output: 3-state
Operating temperature: -40...85°C
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; SMD; LCX
Case: TSSOP48
Mounting: SMD
Manufacturer series: LCX
Kind of integrated circuit: buffer; line driver; non-inverting
Supply voltage: 2...3.6V DC
Type of integrated circuit: digital
Number of channels: 16
Kind of output: 3-state
Operating temperature: -40...85°C
на замовлення 23 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 79.51 грн |
14+ | 64.22 грн |
74LCX16244MTD |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; SMD; LCX
Case: TSSOP48
Mounting: SMD
Manufacturer series: LCX
Kind of integrated circuit: buffer; line driver; non-inverting
Part status: Not recommended for new designs
Supply voltage: 2...3.6V DC
Type of integrated circuit: digital
Number of channels: 16
Quiescent current: 20µA
Kind of output: 3-state
Operating temperature: -40...85°C
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; SMD; LCX
Case: TSSOP48
Mounting: SMD
Manufacturer series: LCX
Kind of integrated circuit: buffer; line driver; non-inverting
Part status: Not recommended for new designs
Supply voltage: 2...3.6V DC
Type of integrated circuit: digital
Number of channels: 16
Quiescent current: 20µA
Kind of output: 3-state
Operating temperature: -40...85°C
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MC74LVXC3245DTRG |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; bidirectional,transceiver,translator; Ch: 8; SMD
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver; translator
Number of channels: 8
Supply voltage: 2.3...5.5V DC
Mounting: SMD
Case: TSSOP24
Operating temperature: -40...85°C
Kind of package: reel; tape
Manufacturer series: LVX
Quiescent current: 50µA
Kind of output: 3-state
Category: Level translators
Description: IC: digital; bidirectional,transceiver,translator; Ch: 8; SMD
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver; translator
Number of channels: 8
Supply voltage: 2.3...5.5V DC
Mounting: SMD
Case: TSSOP24
Operating temperature: -40...85°C
Kind of package: reel; tape
Manufacturer series: LVX
Quiescent current: 50µA
Kind of output: 3-state
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FDN337N |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.2A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.2A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.2A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.2A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 4523 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 34.58 грн |
23+ | 17.28 грн |
100+ | 12.92 грн |
145+ | 6.19 грн |
397+ | 5.89 грн |
SB5100 |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5A; DO201; 5W; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A
Semiconductor structure: single diode
Case: DO201
Max. forward impulse current: 150A
Capacitance: 380pF
Kind of package: reel; tape
Power dissipation: 5W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5A; DO201; 5W; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A
Semiconductor structure: single diode
Case: DO201
Max. forward impulse current: 150A
Capacitance: 380pF
Kind of package: reel; tape
Power dissipation: 5W
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FDPF12N50T |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; 42W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 42W
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate charge: 30nC
Technology: UniFET™
Kind of channel: enhancement
Gate-source voltage: ±30V
Drain-source voltage: 500V
Drain current: 6.9A
On-state resistance: 0.65Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; 42W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 42W
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate charge: 30nC
Technology: UniFET™
Kind of channel: enhancement
Gate-source voltage: ±30V
Drain-source voltage: 500V
Drain current: 6.9A
On-state resistance: 0.65Ω
на замовлення 217 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 139.96 грн |
4+ | 116.97 грн |
10+ | 89.45 грн |
28+ | 84.09 грн |
MOC3073M |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3073M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; without zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 6mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3073M
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3073M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; without zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 6mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3073M
на замовлення 398 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 115.26 грн |
10+ | 68.80 грн |
17+ | 54.72 грн |
46+ | 51.73 грн |
FSL146MRBN |
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Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1.5A; 650V; 67kHz; Ch: 1; DIP8; flyback
Output voltage: 650V
Power: 26W
Operating temperature: -40...125°C
Number of channels: 1
Mounting: THT
Duty cycle factor: 61...73%
Kind of integrated circuit: PWM controller
Topology: flyback
Input voltage: 85...265V
Case: DIP8
Operating voltage: 7.5...24.5V DC
Frequency: 67kHz
On-state resistance: 2.6Ω
Output current: 1.5A
Type of integrated circuit: PMIC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1.5A; 650V; 67kHz; Ch: 1; DIP8; flyback
Output voltage: 650V
Power: 26W
Operating temperature: -40...125°C
Number of channels: 1
Mounting: THT
Duty cycle factor: 61...73%
Kind of integrated circuit: PWM controller
Topology: flyback
Input voltage: 85...265V
Case: DIP8
Operating voltage: 7.5...24.5V DC
Frequency: 67kHz
On-state resistance: 2.6Ω
Output current: 1.5A
Type of integrated circuit: PMIC
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FDB3652 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 61A; 150W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Gate charge: 53nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 61A
On-state resistance: 43mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 61A; 150W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Gate charge: 53nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 61A
On-state resistance: 43mΩ
на замовлення 408 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 132.55 грн |
5+ | 108.56 грн |
10+ | 93.27 грн |
27+ | 88.68 грн |
TIP121G |
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Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 5A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 5A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 5A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 5A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
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MMSZ4684T1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Case: SOD123
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 3.3V
Leakage current: 7.5µA
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: MMSZ4xxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Case: SOD123
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 3.3V
Leakage current: 7.5µA
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: MMSZ4xxT1G
на замовлення 7219 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 10.70 грн |
50+ | 7.80 грн |
59+ | 6.57 грн |
90+ | 4.28 грн |
108+ | 3.56 грн |
484+ | 1.89 грн |
1331+ | 1.79 грн |
3000+ | 1.72 грн |
NCP3232NMNTXG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; QFN40; buck; 4.5÷23VDC
Case: QFN40
Mounting: SMD
Number of channels: 1
Operating temperature: -40...125°C
Topology: buck
Frequency: 450...550kHz
Operating voltage: 4.5...23V DC
Output current: 15A
Type of integrated circuit: PMIC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; QFN40; buck; 4.5÷23VDC
Case: QFN40
Mounting: SMD
Number of channels: 1
Operating temperature: -40...125°C
Topology: buck
Frequency: 450...550kHz
Operating voltage: 4.5...23V DC
Output current: 15A
Type of integrated circuit: PMIC
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MC74VHCT125ADR2G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; VHCT; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Quiescent current: 40µA
Kind of package: reel; tape
Manufacturer series: VHCT
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; VHCT; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Quiescent current: 40µA
Kind of package: reel; tape
Manufacturer series: VHCT
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FDLL4150 |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.4A; 6ns; SOD80; reel,tape
Semiconductor structure: single diode
Load current: 0.4A
Max. off-state voltage: 50V
Case: SOD80
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: small signal
Mounting: SMD
Reverse recovery time: 6ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.4A; 6ns; SOD80; reel,tape
Semiconductor structure: single diode
Load current: 0.4A
Max. off-state voltage: 50V
Case: SOD80
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: small signal
Mounting: SMD
Reverse recovery time: 6ns
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2N5192G |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 4A; 40W; TO225
Case: TO225
Frequency: 2MHz
Collector-emitter voltage: 80V
Current gain: 20...80
Collector current: 4A
Type of transistor: NPN
Power dissipation: 40W
Polarisation: bipolar
Kind of package: bulk
Mounting: THT
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 4A; 40W; TO225
Case: TO225
Frequency: 2MHz
Collector-emitter voltage: 80V
Current gain: 20...80
Collector current: 4A
Type of transistor: NPN
Power dissipation: 40W
Polarisation: bipolar
Kind of package: bulk
Mounting: THT
на замовлення 483 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 64.22 грн |
10+ | 48.62 грн |
24+ | 38.84 грн |
64+ | 36.70 грн |
250+ | 35.32 грн |
2N5191G |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 4A; 40W; TO225
Case: TO225
Frequency: 2MHz
Collector-emitter voltage: 60V
Current gain: 25...100
Collector current: 4A
Type of transistor: NPN
Power dissipation: 40W
Polarisation: bipolar
Kind of package: bulk
Mounting: THT
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 4A; 40W; TO225
Case: TO225
Frequency: 2MHz
Collector-emitter voltage: 60V
Current gain: 25...100
Collector current: 4A
Type of transistor: NPN
Power dissipation: 40W
Polarisation: bipolar
Kind of package: bulk
Mounting: THT
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SZBZX84C3V3LT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: BZX84C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: BZX84C
Application: automotive industry
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SZBZX84C3V3ET1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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FSA2467MPX |
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Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 4; MLP16; 1.65÷4.3VDC; reel,tape; 500nA
Supply voltage: 1.65...4.3V DC
Type of integrated circuit: analog switch
Number of channels: 4
Quiescent current: 500nA
Kind of output: DPDT x2
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Case: MLP16
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 4; MLP16; 1.65÷4.3VDC; reel,tape; 500nA
Supply voltage: 1.65...4.3V DC
Type of integrated circuit: analog switch
Number of channels: 4
Quiescent current: 500nA
Kind of output: DPDT x2
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Case: MLP16
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H11G1M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
Case: DIP6
Turn-off time: 0.1ms
CTR@If: 100%@10mA
Collector-emitter voltage: 100V
Turn-on time: 5µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
Case: DIP6
Turn-off time: 0.1ms
CTR@If: 100%@10mA
Collector-emitter voltage: 100V
Turn-on time: 5µs
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NJW21194G |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 200W; TO3P
Mounting: THT
Case: TO3P
Frequency: 4MHz
Collector-emitter voltage: 250V
Current gain: 20...70
Collector current: 16A
Type of transistor: NPN
Application: automotive industry
Power dissipation: 200W
Polarisation: bipolar
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 200W; TO3P
Mounting: THT
Case: TO3P
Frequency: 4MHz
Collector-emitter voltage: 250V
Current gain: 20...70
Collector current: 16A
Type of transistor: NPN
Application: automotive industry
Power dissipation: 200W
Polarisation: bipolar
Kind of package: tube
на замовлення 123 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 315.32 грн |
5+ | 210.23 грн |
12+ | 198.77 грн |
30+ | 191.12 грн |