| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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MC14044BDR2G | ONSEMI |
 Category: LatchesDescription: IC: digital; RS latch; Ch: 4; IN: 2; CMOS; 3÷18VDC; SMD; SOIC16 Operating temperature: -55...125°C Technology: CMOS Number of inputs: 2 Kind of package: reel; tape Case: SOIC16 Family: HEF4000B Kind of integrated circuit: RS latch Number of channels: 4 Mounting: SMD Supply voltage: 3...18V DC Type of integrated circuit: digital |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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MUN5113DW1T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 47kΩ Mounting: SMD Case: SC70-6; SC88; SOT363 Collector-emitter voltage: 50V Base resistor: 47kΩ Power dissipation: 0.187W Polarisation: bipolar Kind of transistor: BRT Type of transistor: PNP x2 Kind of package: reel; tape Base-emitter resistor: 47kΩ Collector current: 0.1A |
на замовлення 80 шт: термін постачання 14-30 дні (днів) |
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MOC3010M | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 250V; DIP6; Ch: 1; MOC301XM Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac; without zero voltage crossing driver Case: DIP6 Max. off-state voltage: 3V Trigger current: 15mA Mounting: THT Number of channels: 1 Manufacturer series: MOC301XM Output voltage: 250V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
| MOC3010SM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 250V; PDIP6; Ch: 1; MOC301XM; 1kV/μs Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac; without zero voltage crossing driver Case: PDIP6 Max. off-state voltage: 3V Trigger current: 15mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC301XM Slew rate: 1kV/μs Output voltage: 250V |
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В кошику од. на суму грн. | |||||||||||||||||||
| MOC3010SR2M | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 250V; triac; SMT6; Ch: 1; MOC301XM Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: SMT6 Max. off-state voltage: 3V Trigger current: 15mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC301XM Kind of package: reel; tape Output voltage: 250V |
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В кошику од. на суму грн. | |||||||||||||||||||
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MOC3010VM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 250V; triac; DIP6; Ch: 1; MOC301XM; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: DIP6 Max. off-state voltage: 3V Trigger current: 15mA Mounting: THT Number of channels: 1 Manufacturer series: MOC301XM Kind of package: tube Conform to the norm: VDE Output voltage: 250V |
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В кошику од. на суму грн. | ||||||||||||||||||
| ESD9M5.0ST5G | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 5.8V; unidirectional; SOD923F; reel,tape Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 5.8V Semiconductor structure: unidirectional Case: SOD923F Mounting: SMD Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||||||
| MC14551BDR2G | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; demultiplexer,multiplexer; SPDT; Ch: 4; SOIC16 Mounting: SMD Supply voltage: 3...18V Type of integrated circuit: analog switch Operating temperature: -55...125°C Resistance: 1.1kΩ Quiescent current: 600µA Output configuration: SPDT Case: SOIC16 Kind of integrated circuit: demultiplexer; multiplexer Number of channels: 4 |
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В кошику од. на суму грн. | |||||||||||||||||||
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1N4004 | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V; 3W Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.1V Capacitance: 15pF Power dissipation: 3W |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||||||||||||||
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1N5402G | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 3A; Ifsm: 200A; DO27; bulk; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 200A Case: DO27 Kind of package: bulk Max. forward voltage: 1V Leakage current: 50µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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KSP10BU | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; RF; 25V; 0.35W; TO92 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 25V Power dissipation: 0.35W Case: TO92 Current gain: 60 Mounting: THT Kind of package: bulk Frequency: 650MHz |
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В кошику од. на суму грн. | ||||||||||||||||||
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KSP10TA | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; RF; 25V; 0.35W; TO92 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 25V Power dissipation: 0.35W Case: TO92 Current gain: 60 Mounting: THT Kind of package: Ammo Pack Frequency: 650MHz |
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В кошику од. на суму грн. | ||||||||||||||||||
| CPH5520-TL-E | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 50V; 2A; 1.2W Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 50V Collector current: 2A Power dissipation: 1.2W Case: CPH5 Current gain: 200...560 Mounting: SMD Kind of package: reel; tape Frequency: 420MHz |
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В кошику од. на суму грн. | |||||||||||||||||||
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MRA4004T3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; SMA; Ufmax: 1.18V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Case: SMA Kind of package: reel; tape Max. forward voltage: 1.18V Max. load current: 30A |
на замовлення 6041 шт: термін постачання 14-30 дні (днів) |
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FDP22N50N | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 13.2A; 312.5W; TO220AB Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 13.2A Power dissipation: 312.5W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.22Ω Mounting: THT Gate charge: 65nC Kind of package: tube Kind of channel: enhancement |
на замовлення 42 шт: термін постачання 14-30 дні (днів) |
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LM358EDR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1.1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8 Voltage supply range: ± 1.5...16V DC; 3...32V DC Kind of package: reel; tape Input offset current: 150nA Case: SO8 Number of channels: dual; 2 Bandwidth: 1.1MHz Mounting: SMT Input offset voltage: 9mV Type of integrated circuit: operational amplifier Operating temperature: 0...70°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NRVB1240MFST1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 40V; 12A; reel,tape Case: DFN5 Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 150A Max. forward voltage: 0.68V Application: automotive industry Max. off-state voltage: 40V Load current: 12A Max. load current: 20A Semiconductor structure: single diode Type of diode: Schottky rectifying |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NRVB1240MFST3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 40V; 12A; reel,tape Case: DFN5 Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 150A Max. forward voltage: 0.68V Application: automotive industry Max. off-state voltage: 40V Load current: 12A Max. load current: 20A Semiconductor structure: single diode Type of diode: Schottky rectifying |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCP330MUTBG | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; uDFN4 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: uDFN4 On-state resistance: 50mΩ Kind of package: reel; tape Supply voltage: 1.8...5.5V DC Active logical level: high Control voltage: 0...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MJH11022G | ONSEMI |
Category: NPN THT Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 250V; 15A; 150W; TO247-3 Power dissipation: 150W Type of transistor: NPN Kind of package: tube Case: TO247-3 Collector current: 15A Mounting: THT Collector-emitter voltage: 250V Polarisation: bipolar Kind of transistor: Darlington |
на замовлення 90 шт: термін постачання 14-30 дні (днів) |
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MJH11020G | ONSEMI |
Category: NPN THT Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 200V; 15A; 150W; TO247-3 Collector-emitter voltage: 200V Power dissipation: 150W Polarisation: bipolar Kind of transistor: Darlington Type of transistor: NPN Kind of package: tube Case: TO247-3 Collector current: 15A Mounting: THT |
на замовлення 5 шт: термін постачання 14-30 дні (днів) |
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| 1PMT5929BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3.2W; 15V; SMD; POWERMITE; single diode; reel,tape Tolerance: ±5% Mounting: SMD Manufacturer series: 1PMT59xxBT1G Power dissipation: 3.2W Kind of package: reel; tape Semiconductor structure: single diode Case: POWERMITE Zener voltage: 15V Type of diode: Zener |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSR30CM3T5G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT723; SMD; 30V; 0.2A; reel,tape Case: SOT723 Type of diode: Schottky switching Mounting: SMD Max. forward voltage: 0.8V Max. off-state voltage: 30V Load current: 0.2A Kind of package: reel; tape Semiconductor structure: common cathode; double |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NC7SV125P5X | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer; Ch: 1; IN: 2; CMOS; SMD; SC88A; TinyLogic Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer Number of channels: 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SC88A Manufacturer series: TinyLogic Operating temperature: -40...85°C Kind of package: reel; tape Kind of output: 3-state Supply voltage: 0.9...3.6V DC Family: NC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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US2KA | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 1.5A; 75ns; SMA; Ufmax: 1.7V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1.5A Reverse recovery time: 75ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.7V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NRVUS2KA | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 1.5A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1.5A Reverse recovery time: 75ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.7V Max. forward impulse current: 50A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC34074VDR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14 Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: SO14 Operating temperature: -40...125°C Slew rate: 13V/μs Input offset voltage: 7mV Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA |
на замовлення 2490 шт: термін постачання 14-30 дні (днів) |
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SS19 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA; SMD; 90V; 1A; reel,tape Case: SMA Max. off-state voltage: 90V Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Type of diode: Schottky rectifying Mounting: SMD Max. forward impulse current: 40A Max. forward voltage: 0.85V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SS19FA | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123F; SMD; 90V; 1A; reel,tape Case: SOD123F Max. off-state voltage: 90V Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Type of diode: Schottky rectifying Mounting: SMD Max. forward impulse current: 30A Max. forward voltage: 0.8V |
на замовлення 1234 шт: термін постачання 14-30 дні (днів) |
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RURG3060 | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; Ifsm: 325A; TO247-2; tube; 125W Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Max. forward impulse current: 325A Case: TO247-2 Kind of package: tube Reverse recovery time: 60ns Max. load current: 70A Max. forward voltage: 1.5V Power dissipation: 125W Features of semiconductor devices: ultrafast switching |
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В кошику од. на суму грн. | ||||||||||||||||||
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RURG3060-F085 | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; Ifsm: 90A; TO247-2; tube; 80ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Max. forward impulse current: 90A Case: TO247-2 Kind of package: tube Reverse recovery time: 80ns Application: automotive industry |
на замовлення 329 шт: термін постачання 14-30 дні (днів) |
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FQP8N80C | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5.1A; Idm: 32A; 178W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 178W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1.55Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| ADT7476AARQZ-R | ONSEMI |
Category: Temperature transducers Description: IC: temperature sensor; -40÷125°C; QSOP24; SMD; 3÷3.6V Mounting: SMD Supply voltage: 3...3.6V Type of integrated circuit: temperature sensor Temperature measuring range: -40...125°C Case: QSOP24 Interface: PWM; SMBus |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||||
| ADT7476ARQZ-REEL | ONSEMI |
Category: Integrated circuits - others Description: IC: supervisor circuit; 3÷3.6VDC; QSOP24; Ch: 4 Mounting: SMD Supply voltage: 3...3.6V DC Type of integrated circuit: supervisor circuit DC supply current: 1.5mA Integrated circuit features: RPM-based fan controll algorithm Application: active system cooling; fans Case: QSOP24 Interface: SMBus 2.0 Kind of integrated circuit: PWM controller; voltage and thermal monitor Number of channels: 4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FDC3601N | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 1A; 0.96W; SuperSOT-6 Type of transistor: N-MOSFET x2 Gate-source voltage: ±20V Kind of package: reel; tape Case: SuperSOT-6 On-state resistance: 976mΩ Mounting: SMD Power dissipation: 0.96W Polarisation: unipolar Drain current: 1A Kind of channel: enhancement Drain-source voltage: 100V |
на замовлення 2879 шт: термін постачання 14-30 дні (днів) |
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80SQ045NG | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 8A; DO201AD; Ufmax: 0.55V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 8A Semiconductor structure: single diode Case: DO201AD Max. forward voltage: 0.55V Kind of package: bulk |
на замовлення 479 шт: термін постачання 14-30 дні (днів) |
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80SQ045NRLG | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 8A; DO201AD; Ufmax: 0.55V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 8A Semiconductor structure: single diode Case: DO201AD Max. forward voltage: 0.55V Max. forward impulse current: 140A Kind of package: reel; tape |
на замовлення 988 шт: термін постачання 14-30 дні (днів) |
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BC818-40LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 25V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MJD243T4G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 4A; 12.5W; DPAK Collector-emitter voltage: 100V Power dissipation: 12.5W Polarisation: bipolar Type of transistor: NPN Current gain: 40...180 Kind of package: reel; tape Case: DPAK Frequency: 40MHz Collector current: 4A Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MJD243G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 4A; 12.5W; DPAK Collector-emitter voltage: 100V Power dissipation: 12.5W Polarisation: bipolar Type of transistor: NPN Current gain: 40...180 Kind of package: tube Case: DPAK Frequency: 40MHz Collector current: 4A Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NJVMJD243T4G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 4A; 12.5W; DPAK Collector-emitter voltage: 100V Power dissipation: 12.5W Polarisation: bipolar Application: automotive industry Type of transistor: NPN Current gain: 40...180 Kind of package: reel; tape Case: DPAK Frequency: 40MHz Collector current: 4A Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BUV21G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 200V; 40A; 250W; TO204,TO3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 200V Collector current: 40A Power dissipation: 250W Case: TO3; TO204 Current gain: 10...60 Mounting: THT Frequency: 8MHz Pulsed collector current: 50A Kind of package: in-tray |
на замовлення 76 шт: термін постачання 14-30 дні (днів) |
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| NVBG015N065SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 103A; Idm: 442A; 250W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 103A Pulsed drain current: 442A Power dissipation: 250W Case: D2PAK-7 Gate-source voltage: -5...18V On-state resistance: 16mΩ Mounting: SMD Gate charge: 283nC Kind of package: reel; tape Kind of channel: enhancement Technology: SiC Features of semiconductor devices: Kelvin terminal |
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В кошику од. на суму грн. | |||||||||||||||||||
| NVHL015N065SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 115A; Idm: 484A; 321W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 115A Pulsed drain current: 484A Power dissipation: 321W Case: TO247-3 Gate-source voltage: -5...18V On-state resistance: 16mΩ Mounting: THT Gate charge: 283nC Kind of package: tube Kind of channel: enhancement Technology: SiC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NVH4L015N065SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 100A; Idm: 483A; 250W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 100A Pulsed drain current: 483A Power dissipation: 250W Case: TO247-4 Gate-source voltage: -5...18V On-state resistance: 16Ω Mounting: THT Gate charge: 283C Kind of package: tube Kind of channel: enhancement Technology: SiC Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NRVBB30H60CTT4G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SMD; 60V; 15A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 15A Semiconductor structure: common cathode; double Case: D2PAK Max. forward voltage: 0.78V Max. load current: 30A Max. forward impulse current: 260A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FGD1240G2 | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; DPAK Type of transistor: IGBT Case: DPAK Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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FGD3050G2 | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 500V; 27A; 150W; DPAK; Features: logic level; ESD Type of transistor: IGBT Collector-emitter voltage: 500V Collector current: 27A Power dissipation: 150W Case: DPAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Version: ESD Features of semiconductor devices: logic level Application: ignition systems |
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В кошику од. на суму грн. | ||||||||||||||||||
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|
FGD3440G2-F085 | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 400V; 25A; 166W; DPAK; Features: logic level; ESD Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 25A Power dissipation: 166W Case: DPAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Version: ESD Features of semiconductor devices: logic level Application: ignition systems |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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|
ISL9V2040D3ST | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 400V; 10A; 130W; DPAK; Features: logic level; ESD Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 10A Power dissipation: 130W Case: DPAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Version: ESD Features of semiconductor devices: logic level Application: ignition systems |
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В кошику од. на суму грн. | ||||||||||||||||||
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|
SS15 | ONSEMI |
 Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 50V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 50V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 40A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
 |
SS15FA | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123F; SMD; 50V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 50V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.7V Max. forward impulse current: 30A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NCP380HMUAJAATBG | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 0.5÷2.1A; Ch: 1; P-Channel; SMD; uDFN6 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.5...2.1A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: uDFN6 On-state resistance: 0.11Ω Kind of package: reel; tape Supply voltage: 2.5...5.5V DC Active logical level: high Control voltage: 0...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCP380HSN10AAT1G | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1A; Ch: 1; P-Channel; SMD; TSOP5 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: TSOP5 On-state resistance: 135mΩ Kind of package: reel; tape Supply voltage: 2.5...5.5V DC Active logical level: high Control voltage: 0...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCP380LMUAJAATBG | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 0.5÷2.1A; Ch: 1; P-Channel; SMD; uDFN6 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.5...2.1A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: uDFN6 On-state resistance: 0.11Ω Kind of package: reel; tape Supply voltage: 2.5...5.5V DC Active logical level: low Control voltage: 0...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCP380HSNAJAAT1G | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 0.5÷2.1A; Ch: 1; P-Channel; SMD; TSOP6 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.5...2.1A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: TSOP6 On-state resistance: 70mΩ Kind of package: reel; tape Supply voltage: 2.5...5.5V DC Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| NCP380LSN05AAT1G | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 0.5A; Ch: 1; P-Channel; SMD; TSOP5 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.5A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: TSOP5 On-state resistance: 135mΩ Kind of package: reel; tape Supply voltage: 2.5...5.5V DC Active logical level: low Control voltage: 0...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCP380HMU05AATBG | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 0.5A; Ch: 1; P-Channel; SMD; uDFN6 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.5A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: uDFN6 On-state resistance: 0.11Ω Kind of package: reel; tape Supply voltage: 2.5...5.5V DC Active logical level: high Control voltage: 0...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCP380LSNAJAAT1G | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 0.5÷2.1A; Ch: 1; P-Channel; SMD; TSOP6 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.5...2.1A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: TSOP6 On-state resistance: 135mΩ Kind of package: reel; tape Supply voltage: 2.5...5.5V DC Active logical level: low Control voltage: 0...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCP380HMU10AATBG | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1A; Ch: 1; P-Channel; SMD; uDFN6 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: uDFN6 On-state resistance: 0.11Ω Kind of package: reel; tape Supply voltage: 2.5...5.5V DC Active logical level: high Control voltage: 0...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. |
| MC14044BDR2G |
|
Виробник: ONSEMI
Category: Latches
Description: IC: digital; RS latch; Ch: 4; IN: 2; CMOS; 3÷18VDC; SMD; SOIC16
Operating temperature: -55...125°C
Technology: CMOS
Number of inputs: 2
Kind of package: reel; tape
Case: SOIC16
Family: HEF4000B
Kind of integrated circuit: RS latch
Number of channels: 4
Mounting: SMD
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Category: Latches
Description: IC: digital; RS latch; Ch: 4; IN: 2; CMOS; 3÷18VDC; SMD; SOIC16
Operating temperature: -55...125°C
Technology: CMOS
Number of inputs: 2
Kind of package: reel; tape
Case: SOIC16
Family: HEF4000B
Kind of integrated circuit: RS latch
Number of channels: 4
Mounting: SMD
Supply voltage: 3...18V DC
Type of integrated circuit: digital
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| MUN5113DW1T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 47kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Power dissipation: 0.187W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP x2
Kind of package: reel; tape
Base-emitter resistor: 47kΩ
Collector current: 0.1A
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 47kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Power dissipation: 0.187W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP x2
Kind of package: reel; tape
Base-emitter resistor: 47kΩ
Collector current: 0.1A
на замовлення 80 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 80+ | 6.03 грн |
| MOC3010M |
|
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 250V; DIP6; Ch: 1; MOC301XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac; without zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC301XM
Output voltage: 250V
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 250V; DIP6; Ch: 1; MOC301XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac; without zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC301XM
Output voltage: 250V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| MOC3010SM |
|
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 250V; PDIP6; Ch: 1; MOC301XM; 1kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac; without zero voltage crossing driver
Case: PDIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC301XM
Slew rate: 1kV/μs
Output voltage: 250V
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 250V; PDIP6; Ch: 1; MOC301XM; 1kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac; without zero voltage crossing driver
Case: PDIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC301XM
Slew rate: 1kV/μs
Output voltage: 250V
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| MOC3010SR2M |
|
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 250V; triac; SMT6; Ch: 1; MOC301XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC301XM
Kind of package: reel; tape
Output voltage: 250V
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 250V; triac; SMT6; Ch: 1; MOC301XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC301XM
Kind of package: reel; tape
Output voltage: 250V
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| MOC3010VM |
|
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 250V; triac; DIP6; Ch: 1; MOC301XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC301XM
Kind of package: tube
Conform to the norm: VDE
Output voltage: 250V
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 250V; triac; DIP6; Ch: 1; MOC301XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC301XM
Kind of package: tube
Conform to the norm: VDE
Output voltage: 250V
товару немає в наявності
В кошику
од. на суму грн.
| ESD9M5.0ST5G |
|
Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5.8V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.8V
Semiconductor structure: unidirectional
Case: SOD923F
Mounting: SMD
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5.8V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.8V
Semiconductor structure: unidirectional
Case: SOD923F
Mounting: SMD
Kind of package: reel; tape
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В кошику
од. на суму грн.
| MC14551BDR2G |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; SPDT; Ch: 4; SOIC16
Mounting: SMD
Supply voltage: 3...18V
Type of integrated circuit: analog switch
Operating temperature: -55...125°C
Resistance: 1.1kΩ
Quiescent current: 600µA
Output configuration: SPDT
Case: SOIC16
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 4
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; SPDT; Ch: 4; SOIC16
Mounting: SMD
Supply voltage: 3...18V
Type of integrated circuit: analog switch
Operating temperature: -55...125°C
Resistance: 1.1kΩ
Quiescent current: 600µA
Output configuration: SPDT
Case: SOIC16
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 4
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В кошику
од. на суму грн.
| 1N4004 |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V; 3W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Capacitance: 15pF
Power dissipation: 3W
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V; 3W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Capacitance: 15pF
Power dissipation: 3W
товару немає в наявності
Мінімальне замовлення: 10 шт
В кошику
од. на суму грн.
| 1N5402G |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; Ifsm: 200A; DO27; bulk; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: DO27
Kind of package: bulk
Max. forward voltage: 1V
Leakage current: 50µA
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; Ifsm: 200A; DO27; bulk; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: DO27
Kind of package: bulk
Max. forward voltage: 1V
Leakage current: 50µA
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| KSP10BU |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; RF; 25V; 0.35W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 25V
Power dissipation: 0.35W
Case: TO92
Current gain: 60
Mounting: THT
Kind of package: bulk
Frequency: 650MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; RF; 25V; 0.35W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 25V
Power dissipation: 0.35W
Case: TO92
Current gain: 60
Mounting: THT
Kind of package: bulk
Frequency: 650MHz
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| KSP10TA |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; RF; 25V; 0.35W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 25V
Power dissipation: 0.35W
Case: TO92
Current gain: 60
Mounting: THT
Kind of package: Ammo Pack
Frequency: 650MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; RF; 25V; 0.35W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 25V
Power dissipation: 0.35W
Case: TO92
Current gain: 60
Mounting: THT
Kind of package: Ammo Pack
Frequency: 650MHz
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од. на суму грн.
| CPH5520-TL-E |
|
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 50V; 2A; 1.2W
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 1.2W
Case: CPH5
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 420MHz
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 50V; 2A; 1.2W
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 1.2W
Case: CPH5
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 420MHz
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| MRA4004T3G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SMA; Ufmax: 1.18V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
Max. forward voltage: 1.18V
Max. load current: 30A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SMA; Ufmax: 1.18V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
Max. forward voltage: 1.18V
Max. load current: 30A
на замовлення 6041 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 16.45 грн |
| 41+ | 10.52 грн |
| 55+ | 7.82 грн |
| 100+ | 6.99 грн |
| 250+ | 6.13 грн |
| 500+ | 5.50 грн |
| 1000+ | 4.82 грн |
| 2500+ | 4.10 грн |
| 3000+ | 3.97 грн |
| FDP22N50N |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13.2A; 312.5W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13.2A
Power dissipation: 312.5W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13.2A; 312.5W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13.2A
Power dissipation: 312.5W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 42 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 323.44 грн |
| 10+ | 260.46 грн |
| 30+ | 201.92 грн |
| LM358EDR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Kind of package: reel; tape
Input offset current: 150nA
Case: SO8
Number of channels: dual; 2
Bandwidth: 1.1MHz
Mounting: SMT
Input offset voltage: 9mV
Type of integrated circuit: operational amplifier
Operating temperature: 0...70°C
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Kind of package: reel; tape
Input offset current: 150nA
Case: SO8
Number of channels: dual; 2
Bandwidth: 1.1MHz
Mounting: SMT
Input offset voltage: 9mV
Type of integrated circuit: operational amplifier
Operating temperature: 0...70°C
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| NRVB1240MFST1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 40V; 12A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 150A
Max. forward voltage: 0.68V
Application: automotive industry
Max. off-state voltage: 40V
Load current: 12A
Max. load current: 20A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 40V; 12A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 150A
Max. forward voltage: 0.68V
Application: automotive industry
Max. off-state voltage: 40V
Load current: 12A
Max. load current: 20A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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| NRVB1240MFST3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 40V; 12A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 150A
Max. forward voltage: 0.68V
Application: automotive industry
Max. off-state voltage: 40V
Load current: 12A
Max. load current: 20A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 40V; 12A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 150A
Max. forward voltage: 0.68V
Application: automotive industry
Max. off-state voltage: 40V
Load current: 12A
Max. load current: 20A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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| NCP330MUTBG |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; uDFN4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: uDFN4
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 1.8...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; uDFN4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: uDFN4
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 1.8...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
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| MJH11022G |
|
Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 250V; 15A; 150W; TO247-3
Power dissipation: 150W
Type of transistor: NPN
Kind of package: tube
Case: TO247-3
Collector current: 15A
Mounting: THT
Collector-emitter voltage: 250V
Polarisation: bipolar
Kind of transistor: Darlington
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 250V; 15A; 150W; TO247-3
Power dissipation: 150W
Type of transistor: NPN
Kind of package: tube
Case: TO247-3
Collector current: 15A
Mounting: THT
Collector-emitter voltage: 250V
Polarisation: bipolar
Kind of transistor: Darlington
на замовлення 90 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 257.91 грн |
| 3+ | 235.86 грн |
| 10+ | 207.01 грн |
| MJH11020G |
|
Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 200V; 15A; 150W; TO247-3
Collector-emitter voltage: 200V
Power dissipation: 150W
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: NPN
Kind of package: tube
Case: TO247-3
Collector current: 15A
Mounting: THT
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 200V; 15A; 150W; TO247-3
Collector-emitter voltage: 200V
Power dissipation: 150W
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: NPN
Kind of package: tube
Case: TO247-3
Collector current: 15A
Mounting: THT
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 408.41 грн |
| 1PMT5929BT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3.2W; 15V; SMD; POWERMITE; single diode; reel,tape
Tolerance: ±5%
Mounting: SMD
Manufacturer series: 1PMT59xxBT1G
Power dissipation: 3.2W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: POWERMITE
Zener voltage: 15V
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 3.2W; 15V; SMD; POWERMITE; single diode; reel,tape
Tolerance: ±5%
Mounting: SMD
Manufacturer series: 1PMT59xxBT1G
Power dissipation: 3.2W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: POWERMITE
Zener voltage: 15V
Type of diode: Zener
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| NSR30CM3T5G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT723; SMD; 30V; 0.2A; reel,tape
Case: SOT723
Type of diode: Schottky switching
Mounting: SMD
Max. forward voltage: 0.8V
Max. off-state voltage: 30V
Load current: 0.2A
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT723; SMD; 30V; 0.2A; reel,tape
Case: SOT723
Type of diode: Schottky switching
Mounting: SMD
Max. forward voltage: 0.8V
Max. off-state voltage: 30V
Load current: 0.2A
Kind of package: reel; tape
Semiconductor structure: common cathode; double
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| NC7SV125P5X |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer; Ch: 1; IN: 2; CMOS; SMD; SC88A; TinyLogic
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC88A
Manufacturer series: TinyLogic
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 0.9...3.6V DC
Family: NC
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer; Ch: 1; IN: 2; CMOS; SMD; SC88A; TinyLogic
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC88A
Manufacturer series: TinyLogic
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 0.9...3.6V DC
Family: NC
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| US2KA |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1.5A; 75ns; SMA; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.7V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1.5A; 75ns; SMA; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.7V
Kind of package: reel; tape
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| NRVUS2KA |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1.5A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1.5A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
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| MC34074VDR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
на замовлення 2490 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 59.39 грн |
| 12+ | 38.35 грн |
| 25+ | 33.43 грн |
| 100+ | 26.72 грн |
| 250+ | 25.45 грн |
| SS19 |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 90V; 1A; reel,tape
Case: SMA
Max. off-state voltage: 90V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 40A
Max. forward voltage: 0.85V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 90V; 1A; reel,tape
Case: SMA
Max. off-state voltage: 90V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 40A
Max. forward voltage: 0.85V
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| SS19FA |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 90V; 1A; reel,tape
Case: SOD123F
Max. off-state voltage: 90V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 0.8V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 90V; 1A; reel,tape
Case: SOD123F
Max. off-state voltage: 90V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 0.8V
на замовлення 1234 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 22.84 грн |
| 29+ | 15.02 грн |
| 100+ | 10.77 грн |
| 500+ | 8.23 грн |
| 1000+ | 7.97 грн |
| RURG3060 |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; Ifsm: 325A; TO247-2; tube; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 325A
Case: TO247-2
Kind of package: tube
Reverse recovery time: 60ns
Max. load current: 70A
Max. forward voltage: 1.5V
Power dissipation: 125W
Features of semiconductor devices: ultrafast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; Ifsm: 325A; TO247-2; tube; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 325A
Case: TO247-2
Kind of package: tube
Reverse recovery time: 60ns
Max. load current: 70A
Max. forward voltage: 1.5V
Power dissipation: 125W
Features of semiconductor devices: ultrafast switching
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| RURG3060-F085 |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; Ifsm: 90A; TO247-2; tube; 80ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 90A
Case: TO247-2
Kind of package: tube
Reverse recovery time: 80ns
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; Ifsm: 90A; TO247-2; tube; 80ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 90A
Case: TO247-2
Kind of package: tube
Reverse recovery time: 80ns
Application: automotive industry
на замовлення 329 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 278.67 грн |
| 3+ | 230.77 грн |
| 10+ | 184.95 грн |
| FQP8N80C |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.1A; Idm: 32A; 178W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 178W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.55Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.1A; Idm: 32A; 178W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 178W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.55Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
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| ADT7476AARQZ-R |
|
Виробник: ONSEMI
Category: Temperature transducers
Description: IC: temperature sensor; -40÷125°C; QSOP24; SMD; 3÷3.6V
Mounting: SMD
Supply voltage: 3...3.6V
Type of integrated circuit: temperature sensor
Temperature measuring range: -40...125°C
Case: QSOP24
Interface: PWM; SMBus
Category: Temperature transducers
Description: IC: temperature sensor; -40÷125°C; QSOP24; SMD; 3÷3.6V
Mounting: SMD
Supply voltage: 3...3.6V
Type of integrated circuit: temperature sensor
Temperature measuring range: -40...125°C
Case: QSOP24
Interface: PWM; SMBus
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Мінімальне замовлення: 2500 шт
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| ADT7476ARQZ-REEL |
|
Виробник: ONSEMI
Category: Integrated circuits - others
Description: IC: supervisor circuit; 3÷3.6VDC; QSOP24; Ch: 4
Mounting: SMD
Supply voltage: 3...3.6V DC
Type of integrated circuit: supervisor circuit
DC supply current: 1.5mA
Integrated circuit features: RPM-based fan controll algorithm
Application: active system cooling; fans
Case: QSOP24
Interface: SMBus 2.0
Kind of integrated circuit: PWM controller; voltage and thermal monitor
Number of channels: 4
Category: Integrated circuits - others
Description: IC: supervisor circuit; 3÷3.6VDC; QSOP24; Ch: 4
Mounting: SMD
Supply voltage: 3...3.6V DC
Type of integrated circuit: supervisor circuit
DC supply current: 1.5mA
Integrated circuit features: RPM-based fan controll algorithm
Application: active system cooling; fans
Case: QSOP24
Interface: SMBus 2.0
Kind of integrated circuit: PWM controller; voltage and thermal monitor
Number of channels: 4
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| FDC3601N |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 1A; 0.96W; SuperSOT-6
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SuperSOT-6
On-state resistance: 976mΩ
Mounting: SMD
Power dissipation: 0.96W
Polarisation: unipolar
Drain current: 1A
Kind of channel: enhancement
Drain-source voltage: 100V
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 1A; 0.96W; SuperSOT-6
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SuperSOT-6
On-state resistance: 976mΩ
Mounting: SMD
Power dissipation: 0.96W
Polarisation: unipolar
Drain current: 1A
Kind of channel: enhancement
Drain-source voltage: 100V
на замовлення 2879 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 61.22 грн |
| 12+ | 37.16 грн |
| 25+ | 31.05 грн |
| 100+ | 23.92 грн |
| 250+ | 20.28 грн |
| 500+ | 18.75 грн |
| 80SQ045NG |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 8A; DO201AD; Ufmax: 0.55V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 8A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.55V
Kind of package: bulk
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 8A; DO201AD; Ufmax: 0.55V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 8A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.55V
Kind of package: bulk
на замовлення 479 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 54.82 грн |
| 11+ | 39.62 грн |
| 100+ | 36.40 грн |
| 80SQ045NRLG |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 8A; DO201AD; Ufmax: 0.55V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 8A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.55V
Max. forward impulse current: 140A
Kind of package: reel; tape
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 8A; DO201AD; Ufmax: 0.55V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 8A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.55V
Max. forward impulse current: 140A
Kind of package: reel; tape
на замовлення 988 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 84.97 грн |
| 10+ | 42.76 грн |
| 25+ | 39.96 грн |
| 50+ | 37.92 грн |
| 100+ | 35.55 грн |
| 200+ | 33.00 грн |
| BC818-40LT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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| MJD243T4G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 12.5W; DPAK
Collector-emitter voltage: 100V
Power dissipation: 12.5W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 40...180
Kind of package: reel; tape
Case: DPAK
Frequency: 40MHz
Collector current: 4A
Mounting: SMD
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 12.5W; DPAK
Collector-emitter voltage: 100V
Power dissipation: 12.5W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 40...180
Kind of package: reel; tape
Case: DPAK
Frequency: 40MHz
Collector current: 4A
Mounting: SMD
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| MJD243G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 12.5W; DPAK
Collector-emitter voltage: 100V
Power dissipation: 12.5W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 40...180
Kind of package: tube
Case: DPAK
Frequency: 40MHz
Collector current: 4A
Mounting: SMD
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 12.5W; DPAK
Collector-emitter voltage: 100V
Power dissipation: 12.5W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 40...180
Kind of package: tube
Case: DPAK
Frequency: 40MHz
Collector current: 4A
Mounting: SMD
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| NJVMJD243T4G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 12.5W; DPAK
Collector-emitter voltage: 100V
Power dissipation: 12.5W
Polarisation: bipolar
Application: automotive industry
Type of transistor: NPN
Current gain: 40...180
Kind of package: reel; tape
Case: DPAK
Frequency: 40MHz
Collector current: 4A
Mounting: SMD
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 12.5W; DPAK
Collector-emitter voltage: 100V
Power dissipation: 12.5W
Polarisation: bipolar
Application: automotive industry
Type of transistor: NPN
Current gain: 40...180
Kind of package: reel; tape
Case: DPAK
Frequency: 40MHz
Collector current: 4A
Mounting: SMD
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| BUV21G |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 200V; 40A; 250W; TO204,TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 200V
Collector current: 40A
Power dissipation: 250W
Case: TO3; TO204
Current gain: 10...60
Mounting: THT
Frequency: 8MHz
Pulsed collector current: 50A
Kind of package: in-tray
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 200V; 40A; 250W; TO204,TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 200V
Collector current: 40A
Power dissipation: 250W
Case: TO3; TO204
Current gain: 10...60
Mounting: THT
Frequency: 8MHz
Pulsed collector current: 50A
Kind of package: in-tray
на замовлення 76 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1320.24 грн |
| 3+ | 1192.85 грн |
| NVBG015N065SC1 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 103A; Idm: 442A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 103A
Pulsed drain current: 442A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 283nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 103A; Idm: 442A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 103A
Pulsed drain current: 442A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 283nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
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| NVHL015N065SC1 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 115A; Idm: 484A; 321W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 115A
Pulsed drain current: 484A
Power dissipation: 321W
Case: TO247-3
Gate-source voltage: -5...18V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 283nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 115A; Idm: 484A; 321W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 115A
Pulsed drain current: 484A
Power dissipation: 321W
Case: TO247-3
Gate-source voltage: -5...18V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 283nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
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| NVH4L015N065SC1 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 100A; Idm: 483A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 100A
Pulsed drain current: 483A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: -5...18V
On-state resistance: 16Ω
Mounting: THT
Gate charge: 283C
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 100A; Idm: 483A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 100A
Pulsed drain current: 483A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: -5...18V
On-state resistance: 16Ω
Mounting: THT
Gate charge: 283C
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
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| NRVBB30H60CTT4G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 60V; 15A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 15A
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.78V
Max. load current: 30A
Max. forward impulse current: 260A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 60V; 15A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 15A
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.78V
Max. load current: 30A
Max. forward impulse current: 260A
Kind of package: reel; tape
Application: automotive industry
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| FGD1240G2 |
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; DPAK
Type of transistor: IGBT
Case: DPAK
Mounting: SMD
Category: SMD IGBT transistors
Description: Transistor: IGBT; DPAK
Type of transistor: IGBT
Case: DPAK
Mounting: SMD
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Мінімальне замовлення: 2500 шт
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| FGD3050G2 |
|
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 500V; 27A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 500V
Collector current: 27A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Version: ESD
Features of semiconductor devices: logic level
Application: ignition systems
Category: SMD IGBT transistors
Description: Transistor: IGBT; 500V; 27A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 500V
Collector current: 27A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Version: ESD
Features of semiconductor devices: logic level
Application: ignition systems
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| FGD3440G2-F085 |
|
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25A; 166W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25A
Power dissipation: 166W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Version: ESD
Features of semiconductor devices: logic level
Application: ignition systems
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25A; 166W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25A
Power dissipation: 166W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Version: ESD
Features of semiconductor devices: logic level
Application: ignition systems
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| ISL9V2040D3ST |
|
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 10A; 130W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 10A
Power dissipation: 130W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Version: ESD
Features of semiconductor devices: logic level
Application: ignition systems
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 10A; 130W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 10A
Power dissipation: 130W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Version: ESD
Features of semiconductor devices: logic level
Application: ignition systems
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| SS15 |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 50V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 50V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
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| SS15FA |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 50V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 50V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
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| NCP380HMUAJAATBG |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5÷2.1A; Ch: 1; P-Channel; SMD; uDFN6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.5...2.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: uDFN6
On-state resistance: 0.11Ω
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5÷2.1A; Ch: 1; P-Channel; SMD; uDFN6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.5...2.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: uDFN6
On-state resistance: 0.11Ω
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
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| NCP380HSN10AAT1G |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1A; Ch: 1; P-Channel; SMD; TSOP5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: TSOP5
On-state resistance: 135mΩ
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1A; Ch: 1; P-Channel; SMD; TSOP5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: TSOP5
On-state resistance: 135mΩ
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
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| NCP380LMUAJAATBG |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5÷2.1A; Ch: 1; P-Channel; SMD; uDFN6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.5...2.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: uDFN6
On-state resistance: 0.11Ω
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: low
Control voltage: 0...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5÷2.1A; Ch: 1; P-Channel; SMD; uDFN6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.5...2.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: uDFN6
On-state resistance: 0.11Ω
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: low
Control voltage: 0...5.5V DC
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| NCP380HSNAJAAT1G |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5÷2.1A; Ch: 1; P-Channel; SMD; TSOP6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.5...2.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: TSOP6
On-state resistance: 70mΩ
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Operating temperature: -40...85°C
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5÷2.1A; Ch: 1; P-Channel; SMD; TSOP6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.5...2.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: TSOP6
On-state resistance: 70mΩ
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Operating temperature: -40...85°C
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Мінімальне замовлення: 3000 шт
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| NCP380LSN05AAT1G |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5A; Ch: 1; P-Channel; SMD; TSOP5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: TSOP5
On-state resistance: 135mΩ
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: low
Control voltage: 0...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5A; Ch: 1; P-Channel; SMD; TSOP5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: TSOP5
On-state resistance: 135mΩ
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: low
Control voltage: 0...5.5V DC
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| NCP380HMU05AATBG |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5A; Ch: 1; P-Channel; SMD; uDFN6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: uDFN6
On-state resistance: 0.11Ω
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5A; Ch: 1; P-Channel; SMD; uDFN6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: uDFN6
On-state resistance: 0.11Ω
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
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| NCP380LSNAJAAT1G |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5÷2.1A; Ch: 1; P-Channel; SMD; TSOP6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.5...2.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: TSOP6
On-state resistance: 135mΩ
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: low
Control voltage: 0...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5÷2.1A; Ch: 1; P-Channel; SMD; TSOP6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.5...2.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: TSOP6
On-state resistance: 135mΩ
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: low
Control voltage: 0...5.5V DC
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| NCP380HMU10AATBG |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1A; Ch: 1; P-Channel; SMD; uDFN6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: uDFN6
On-state resistance: 0.11Ω
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1A; Ch: 1; P-Channel; SMD; uDFN6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: uDFN6
On-state resistance: 0.11Ω
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
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