| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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| NCV20074DTBR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 3MHz; Ch: 4; ±1.35÷18VDC,2.7÷36VDC Kind of package: reel; tape Mounting: SMT Type of integrated circuit: operational amplifier Number of channels: quad; 4 Integrated circuit features: rail-to-rail output Case: TSSOP14 Operating temperature: -40...125°C Input offset current: 75pA Input bias current: 1.5nA Input offset voltage: 3mV Voltage supply range: ± 1.35...18V DC; 2.7...36V DC Slew rate: 2.4V/μs Bandwidth: 3MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCS20074DTBR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 3MHz; Ch: 4; ±1.35÷18VDC,2.7÷36VDC Kind of package: reel; tape Mounting: SMT Type of integrated circuit: operational amplifier Number of channels: quad; 4 Integrated circuit features: rail-to-rail output Case: TSSOP14 Operating temperature: -40...125°C Input offset current: 75pA Input bias current: 1.5nA Input offset voltage: 3mV Voltage supply range: ± 1.35...18V DC; 2.7...36V DC Slew rate: 2.4V/μs Bandwidth: 3MHz |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||||
| NCV20074DR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 3MHz; Ch: 4; ±1.35÷18VDC,2.7÷36VDC Kind of package: reel; tape Mounting: SMT Type of integrated circuit: operational amplifier Number of channels: quad; 4 Integrated circuit features: rail-to-rail output Case: SO14 Operating temperature: -40...125°C Input offset current: 75pA Input bias current: 1.5nA Input offset voltage: 3mV Voltage supply range: ± 1.35...18V DC; 2.7...36V DC Slew rate: 2.4V/μs Bandwidth: 3MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MBRS410LT3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 10V; 4A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 10V Load current: 4A Semiconductor structure: single diode Case: SMC Max. forward voltage: 0.225V Kind of package: reel; tape |
на замовлення 1067 шт: термін постачання 14-30 дні (днів) |
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FDLL300A | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 125V; 0.5A; SOD80; Ufmax: 1V; Ifsm: 4A; 500mW Type of diode: switching Case: SOD80 Mounting: SMD Max. off-state voltage: 125V Load current: 0.5A Semiconductor structure: single diode Capacitance: 6pF Max. forward voltage: 1V Max. forward impulse current: 4A Kind of package: reel; tape Power dissipation: 0.5W Max. load current: 0.6A |
на замовлення 1221 шт: термін постачання 14-30 дні (днів) |
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| FNB41560 | ONSEMI |
Category: Motor and PWM driversDescription: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAA-A26 Mounting: THT Frequency: 20kHz Number of channels: 6 Power dissipation: 34W Operating voltage: 13.5...16.5/0...400V DC Kind of integrated circuit: 3-phase motor controller; IPM Collector-emitter voltage: 600V Technology: Motion SPM® 45 Case: SPMAA-A26 Type of integrated circuit: driver Topology: IGBT three-phase bridge; NTC thermistor Operating temperature: -40...125°C Output current: 15A |
на замовлення 49 шт: термін постачання 14-30 дні (днів) |
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FDD4243 | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -14A; 42W; DPAK Power dissipation: 42W Gate charge: 29nC Polarisation: unipolar Technology: PowerTrench® Drain current: -14A Kind of channel: enhancement Drain-source voltage: -40V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: DPAK On-state resistance: 69mΩ Mounting: SMD |
на замовлення 2407 шт: термін постачання 14-30 дні (днів) |
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NCS20071SN2T1G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 3MHz; Ch: 1; ±1.35÷18VDC,2.7÷36VDC Type of integrated circuit: operational amplifier Case: TSOP5 Mounting: SMT Operating temperature: -40...125°C Kind of package: reel; tape Input offset voltage: 4.5mV Voltage supply range: ± 1.35...18V DC; 2.7...36V DC Slew rate: 2.8V/μs Bandwidth: 3MHz Integrated circuit features: rail-to-rail output Number of channels: single; 1 |
на замовлення 2181 шт: термін постачання 14-30 дні (днів) |
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| NTTFS002N04CLTAG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFN8 Case: WDFN8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 49nC On-state resistance: 2.2mΩ Gate-source voltage: ±20V Power dissipation: 27W Drain current: 142A Drain-source voltage: 40V Pulsed drain current: 706A Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||||||||||||||
| NTTFS002N04CTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 136A; Idm: 676A; 27W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 136A Pulsed drain current: 676A Power dissipation: 27W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||||||||||||||
| NVTFS002N04CLTAG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFN8 Case: WDFN8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 49nC On-state resistance: 2.2mΩ Gate-source voltage: ±20V Power dissipation: 27W Drain current: 142A Drain-source voltage: 40V Pulsed drain current: 706A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NVTFS002N04CTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 136A; Idm: 676A; 27W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 136A Pulsed drain current: 676A Power dissipation: 27W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NVTFWS002N04CLTAG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFNW8 Case: WDFNW8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 49nC On-state resistance: 2.2mΩ Gate-source voltage: ±20V Power dissipation: 27W Drain current: 142A Drain-source voltage: 40V Pulsed drain current: 706A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NVTFWS002N04CTAG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 136A; Idm: 676A; 27W; WDFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 136A Pulsed drain current: 676A Power dissipation: 27W Case: WDFNW8 Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCV6357MTWATXG | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; SMD; reel,tape; automotive industry Type of integrated circuit: PMIC Kind of package: reel; tape Mounting: SMD Application: automotive industry Kind of integrated circuit: DC/DC converter |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCP383LMUAJAATXG | ONSEMI |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 0.5÷2.8A; Ch: 2; N-Channel; SMD; uDFN10 Active logical level: low Kind of output: N-Channel Type of integrated circuit: power switch Kind of package: reel; tape Mounting: SMD Case: uDFN10 Control voltage: 0...5.5V DC On-state resistance: 95mΩ Output current: 0.5...2.8A Number of channels: 2 Supply voltage: 2.7...5.5V DC Kind of integrated circuit: high-side |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MMBZ5250BLT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 20V; SMD; SOT23; reel,tape; single diode Case: SOT23 Mounting: SMD Semiconductor structure: single diode Type of diode: Zener Power dissipation: 0.3W Tolerance: ±5% Zener voltage: 20V Manufacturer series: MMBZ52xxBLT1G Kind of package: reel; tape |
на замовлення 5900 шт: термін постачання 14-30 дні (днів) |
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FQD13N10TM | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 6.3A; 40W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 6.3A Power dissipation: 40W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement Technology: QFET® |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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NSR0320MW2T1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD323; SMD; 23V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD323 Mounting: SMD Max. off-state voltage: 23V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.5V Kind of package: reel; tape |
на замовлення 15144 шт: термін постачання 14-30 дні (днів) |
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2N4922G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 1A; 30W; TO225 Kind of package: bulk Mounting: THT Type of transistor: NPN Case: TO225 Collector current: 1A Power dissipation: 30W Current gain: 30...150 Frequency: 3MHz Collector-emitter voltage: 60V Polarisation: bipolar |
на замовлення 70 шт: термін постачання 14-30 дні (днів) |
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MBR2545CTG | ONSEMI |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO220-3; Ufmax: 0.72V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 15A x2 Semiconductor structure: common cathode; double Case: TO220-3 Max. forward voltage: 0.72V Max. load current: 30A Max. forward impulse current: 150A Kind of package: tube Heatsink thickness: 1.15...1.39mm |
на замовлення 251 шт: термін постачання 14-30 дні (днів) |
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HCPL2611 | ONSEMI |
Category: Optocouplers - digital outputDescription: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 10Mbps; DIP8 Case: DIP8 Kind of output: Schmitt trigger Type of optocoupler: optocoupler Mounting: THT Turn-off time: 12ns Turn-on time: 50ns Number of channels: 1 Slew rate: 2.5kV/μs Transfer rate: 10Mbps |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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HCPL2611M | ONSEMI |
Category: Optocouplers - digital outputDescription: Optocoupler; THT; Ch: 1; OUT: logic; Uinsul: 5kV; 10Mbps; DIP8 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: logic Case: DIP8 Max. off-state voltage: 5V Manufacturer series: HCPL2611M Slew rate: 15kV/μs Transfer rate: 10Mbps Insulation voltage: 5kV Turn-on time: 30ns Output voltage: -500mV...7V Turn-off time: 30ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| MC74AC374DWG | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; AC; SMD; SOIC20 Type of integrated circuit: digital Kind of integrated circuit: 3-state; D flip-flop; octal Number of channels: 8 Technology: CMOS Mounting: SMD Case: SOIC20 Operating temperature: -40...85°C Family: AC Kind of output: 3-state Supply voltage: 2...6V DC Kind of package: tube Manufacturer series: AC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC74AC374DWR2G | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; AC; SMD; SOIC20 Type of integrated circuit: digital Kind of integrated circuit: 3-state; D flip-flop; octal Number of channels: 8 Technology: CMOS Mounting: SMD Case: SOIC20 Operating temperature: -40...85°C Family: AC Kind of output: 3-state Supply voltage: 2...6V DC Kind of package: reel; tape Manufacturer series: AC |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||||||
| NXH600N65L4Q2F2SG | ONSEMI |
Category: IGBT modulesDescription: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 600A; PIM41; SiC Technology: SiC Gate-emitter voltage: ±20V Collector current: 600A Topology: NTC thermistor; three-level inverter; single-phase Max. off-state voltage: 650V Semiconductor structure: diode/transistor Application: for UPS; Inverter Type of semiconductor module: IGBT Case: PIM41 Mechanical mounting: screw |
товару немає в наявності |
Мінімальне замовлення: 36 шт В кошику од. на суму грн. | |||||||||||||||||||
| NXH160T120L2Q2F2S1G | ONSEMI |
Category: IGBT modulesDescription: Module: IGBT; diode/transistor; 3-level inverter SPLIT-TNPC Gate-emitter voltage: ±20V Collector current: 181A Pulsed collector current: 543A Topology: 3-level inverter SPLIT-TNPC Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Type of semiconductor module: IGBT Case: PIM56 Electrical mounting: Press-in PCB Mechanical mounting: screw |
товару немає в наявності |
Мінімальне замовлення: 12 шт В кошику од. на суму грн. | |||||||||||||||||||
| NXH200T120H3Q2F2STNG | ONSEMI |
Category: IGBT modulesDescription: Module: IGBT; Ic: 330A; PIM Case: PIM Collector current: 330A Type of semiconductor module: IGBT |
на замовлення 396 шт: термін постачання 14-30 дні (днів) |
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| NXH200T120H3Q2F2SG | ONSEMI |
Category: IGBT modulesDescription: Module: IGBT; Ic: 330A; PIM Case: PIM Collector current: 330A Type of semiconductor module: IGBT |
на замовлення 192 шт: термін постачання 14-30 дні (днів) |
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| NXH450B100H4Q2F2SG | ONSEMI |
Category: IGBT modulesDescription: Module: IGBT; Ic: 101A; PIM Gate-emitter voltage: ±20V Collector current: 101A Type of semiconductor module: IGBT Case: PIM |
на замовлення 216 шт: термін постачання 14-30 дні (днів) |
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| NTMFS0D6N03CT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 433A; Idm: 900A; 200W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 433A Pulsed drain current: 900A Power dissipation: 200W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 620µΩ Mounting: SMD Gate charge: 65nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||||||||||||||
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MUN5112DW1T1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 22kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.187W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 22kΩ |
на замовлення 2279 шт: термін постачання 14-30 дні (днів) |
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| NCP1203P60G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; SMPS; tube Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.25A Mounting: THT Case: DIP8 Topology: flyback Number of channels: 1 Operating temperature: 0...125°C Operating voltage: 7.8...16V DC Kind of package: tube Application: SMPS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FSDM0465REWDTU | ONSEMI |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; 1.4A; 650V; 66kHz; Ch: 1 Mounting: THT Operating temperature: -25...85°C Case: TO220F-6L Frequency: 66kHz Number of channels: 1 Output current: 1.4A On-state resistance: 2.6Ω Operating voltage: 8...19V DC Power: 48W Duty cycle factor: 77...87% Kind of integrated circuit: AC/DC switcher; PWM controller Output voltage: 650V Input voltage: 85...265V Topology: flyback Application: SMPS Type of integrated circuit: PMIC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NDP6060 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 48A; Idm: 144A; 100W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 48A Power dissipation: 100W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 25µΩ Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 144A |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||||||||
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MUN5233T1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.31W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Current gain: 200 |
на замовлення 25982 шт: термін постачання 14-30 дні (днів) |
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| NTMFS4C302NT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 230A; Idm: 900A; 96W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 230A Pulsed drain current: 900A Power dissipation: 96W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 1.15mΩ Mounting: SMD Gate charge: 37nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||||||||||||||
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MJW18020G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 450V; 30A; 250W; TO247-3 Frequency: 13MHz Type of transistor: NPN Kind of package: tube Mounting: THT Collector current: 30A Current gain: 14...34 Power dissipation: 250W Collector-emitter voltage: 450V Polarisation: bipolar Case: TO247-3 |
на замовлення 43 шт: термін постачання 14-30 дні (днів) |
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MJF18004G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 450V; 5A; 35W; TO220FP Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 450V Collector current: 5A Power dissipation: 35W Case: TO220FP Current gain: 14...34 Mounting: THT Kind of package: tube Frequency: 13MHz |
на замовлення 82 шт: термін постачання 14-30 дні (днів) |
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| NCS20092DMR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 350kHz; Ch: 2; 1.8÷5.5VDC; Micro8; 4mV Operating temperature: -40...125°C Case: Micro8 Type of integrated circuit: operational amplifier Input offset current: 1pA Input bias current: 1pA Input offset voltage: 4mV Slew rate: 0.15V/μs Voltage supply range: 1.8...5.5V DC Bandwidth: 350kHz Kind of package: reel; tape Number of channels: dual; 2 Mounting: SMT Integrated circuit features: low power; rail-to-rail |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCS20092DR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 350kHz; Ch: 2; 1.8÷5.5VDC; SO8; 4mV Operating temperature: -40...125°C Case: SO8 Type of integrated circuit: operational amplifier Input offset current: 1pA Input bias current: 1pA Input offset voltage: 4mV Slew rate: 0.15V/μs Voltage supply range: 1.8...5.5V DC Bandwidth: 350kHz Kind of package: reel; tape Number of channels: dual; 2 Mounting: SMT Integrated circuit features: low power; rail-to-rail |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCS20092DTBR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 350kHz; Ch: 2; 1.8÷5.5VDC; TSSOP8; 4mV Operating temperature: -40...125°C Case: TSSOP8 Type of integrated circuit: operational amplifier Input offset current: 1pA Input bias current: 1pA Input offset voltage: 4mV Slew rate: 0.15V/μs Voltage supply range: 1.8...5.5V DC Bandwidth: 350kHz Kind of package: reel; tape Number of channels: dual; 2 Mounting: SMT Integrated circuit features: low power; rail-to-rail |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| LE25U20AMB-AH | ONSEMI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 2MbFLASH; Flash: 256kx8bit; 30MHz; 2.3÷3.6V Operating voltage: 2.3...3.6V Mounting: SMD Case: SOIC8 Operating temperature: -40...85°C Kind of memory: NOR Flash memory organisation: 256kx8bit Type of integrated circuit: FLASH memory Memory: 2Mb FLASH Operating frequency: 30MHz Kind of interface: serial |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| LE25U20AQGTXG | ONSEMI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 2MbFLASH; Flash: 256kx8bit; 30MHz; 2.3÷3.6V Operating voltage: 2.3...3.6V Mounting: SMD Case: WDFN8 Operating temperature: -40...85°C Kind of memory: NOR Flash memory organisation: 256kx8bit Type of integrated circuit: FLASH memory Memory: 2Mb FLASH Operating frequency: 30MHz Kind of interface: serial |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||||||||
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FSQ0765RSUDTU | ONSEMI |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller,resonant mode controller; 2.28A; 650V Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller; resonant mode controller Output current: 2.28A Output voltage: 650V Frequency: 66.7kHz Number of channels: 1 Case: TO220-6 Mounting: THT Operating temperature: -25...85°C Topology: flyback Input voltage: 85...265V On-state resistance: 1.6Ω Power: 70W Operating voltage: 8...19V DC |
на замовлення 308 шт: термін постачання 14-30 дні (днів) |
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MC14018BDG | ONSEMI |
Category: Counters/dividersDescription: IC: digital; divide by N,counter; CMOS; SMD; SOIC16; HEF4000B; tube Operating temperature: -55...125°C Family: HEF4000B Technology: CMOS Kind of integrated circuit: counter; divide by N Type of integrated circuit: digital Case: SOIC16 Mounting: SMD Kind of package: tube Supply voltage: 3...18V DC |
на замовлення 34 шт: термін постачання 14-30 дні (днів) |
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| FSA553UCX | ONSEMI |
Category: Analog multiplexers and switchesDescription: IC: analog switch; demultiplexer; SPST; Ch: 2; WLCSP9; 1.5÷3V Type of integrated circuit: analog switch Number of channels: 2 Mounting: SMD Case: WLCSP9 Operating temperature: -40...85°C Supply voltage: 1.5...3V Kind of integrated circuit: demultiplexer Output configuration: SPST |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| NTMFS5C410NLT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 900A; 56W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 330A Pulsed drain current: 900A Power dissipation: 56W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 820µΩ Mounting: SMD Gate charge: 143nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||||||||||||||
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SBC847BWT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
на замовлення 1100 шт: термін постачання 14-30 дні (днів) |
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BC847CWT3G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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SBC847CWT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SBC847CWT3G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCV1117DT12RKG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 12V; 1A; DPAK; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 12V Output current: 1A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
на замовлення 485 шт: термін постачання 14-30 дні (днів) |
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| NCV1117DTARKG | ONSEMI |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 1.5÷12V; 1A; DPAK Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 1.2V Output voltage: 1.5...12V Output current: 1A Case: DPAK Mounting: SMD Manufacturer series: NCV1117 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Application: automotive industry Input voltage: 1.25...20V |
на замовлення 1336 шт: термін постачання 14-30 дні (днів) |
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| NCV1117DT50RKG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; DPAK; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V Output current: 1A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCV1117DT18RKG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; DPAK; SMD; Ch: 1 Mounting: SMD Application: automotive industry Output current: 1A Number of channels: 1 Output voltage: 1.8V Case: DPAK Kind of voltage regulator: fixed; LDO; linear Kind of package: reel; tape Type of integrated circuit: voltage regulator |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCV1117DT18T5G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; DPAK; SMD; Ch: 1 Mounting: SMD Application: automotive industry Output current: 1A Number of channels: 1 Output voltage: 1.8V Case: DPAK Kind of voltage regulator: fixed; LDO; linear Kind of package: reel; tape Type of integrated circuit: voltage regulator |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSVT65010MW6T1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.38W Case: SC70-6; SC88; SOT363 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSVT65011MW6T1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.38W Case: SC70-6; SC88; SOT363 Current gain: 200...500 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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LM7815CT | ONSEMI |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 15V; 1A; TO220-3; THT; tube Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 2V Output voltage: 15V Output current: 1A Case: TO220-3 Mounting: THT Kind of package: tube Operating temperature: -40...125°C Tolerance: ±4% Number of channels: 1 Heatsink thickness: 0.51...0.61mm Input voltage: 17.5...30V |
товару немає в наявності |
В кошику од. на суму грн. |
| NCV20074DTBR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 4; ±1.35÷18VDC,2.7÷36VDC
Kind of package: reel; tape
Mounting: SMT
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Integrated circuit features: rail-to-rail output
Case: TSSOP14
Operating temperature: -40...125°C
Input offset current: 75pA
Input bias current: 1.5nA
Input offset voltage: 3mV
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Slew rate: 2.4V/μs
Bandwidth: 3MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 4; ±1.35÷18VDC,2.7÷36VDC
Kind of package: reel; tape
Mounting: SMT
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Integrated circuit features: rail-to-rail output
Case: TSSOP14
Operating temperature: -40...125°C
Input offset current: 75pA
Input bias current: 1.5nA
Input offset voltage: 3mV
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Slew rate: 2.4V/μs
Bandwidth: 3MHz
товару немає в наявності
В кошику
од. на суму грн.
| NCS20074DTBR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 4; ±1.35÷18VDC,2.7÷36VDC
Kind of package: reel; tape
Mounting: SMT
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Integrated circuit features: rail-to-rail output
Case: TSSOP14
Operating temperature: -40...125°C
Input offset current: 75pA
Input bias current: 1.5nA
Input offset voltage: 3mV
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Slew rate: 2.4V/μs
Bandwidth: 3MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 4; ±1.35÷18VDC,2.7÷36VDC
Kind of package: reel; tape
Mounting: SMT
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Integrated circuit features: rail-to-rail output
Case: TSSOP14
Operating temperature: -40...125°C
Input offset current: 75pA
Input bias current: 1.5nA
Input offset voltage: 3mV
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Slew rate: 2.4V/μs
Bandwidth: 3MHz
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| NCV20074DR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 4; ±1.35÷18VDC,2.7÷36VDC
Kind of package: reel; tape
Mounting: SMT
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Integrated circuit features: rail-to-rail output
Case: SO14
Operating temperature: -40...125°C
Input offset current: 75pA
Input bias current: 1.5nA
Input offset voltage: 3mV
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Slew rate: 2.4V/μs
Bandwidth: 3MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 4; ±1.35÷18VDC,2.7÷36VDC
Kind of package: reel; tape
Mounting: SMT
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Integrated circuit features: rail-to-rail output
Case: SO14
Operating temperature: -40...125°C
Input offset current: 75pA
Input bias current: 1.5nA
Input offset voltage: 3mV
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Slew rate: 2.4V/μs
Bandwidth: 3MHz
товару немає в наявності
В кошику
од. на суму грн.
| MBRS410LT3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 10V; 4A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 10V
Load current: 4A
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 0.225V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 10V; 4A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 10V
Load current: 4A
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 0.225V
Kind of package: reel; tape
на замовлення 1067 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 92.17 грн |
| 6+ | 78.11 грн |
| FDLL300A |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 125V; 0.5A; SOD80; Ufmax: 1V; Ifsm: 4A; 500mW
Type of diode: switching
Case: SOD80
Mounting: SMD
Max. off-state voltage: 125V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 6pF
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Power dissipation: 0.5W
Max. load current: 0.6A
Category: SMD universal diodes
Description: Diode: switching; SMD; 125V; 0.5A; SOD80; Ufmax: 1V; Ifsm: 4A; 500mW
Type of diode: switching
Case: SOD80
Mounting: SMD
Max. off-state voltage: 125V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 6pF
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Power dissipation: 0.5W
Max. load current: 0.6A
на замовлення 1221 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.16 грн |
| 66+ | 6.32 грн |
| 78+ | 5.38 грн |
| 100+ | 4.95 грн |
| 500+ | 3.94 грн |
| 1000+ | 3.51 грн |
| FNB41560 |
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Виробник: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAA-A26
Mounting: THT
Frequency: 20kHz
Number of channels: 6
Power dissipation: 34W
Operating voltage: 13.5...16.5/0...400V DC
Kind of integrated circuit: 3-phase motor controller; IPM
Collector-emitter voltage: 600V
Technology: Motion SPM® 45
Case: SPMAA-A26
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Operating temperature: -40...125°C
Output current: 15A
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAA-A26
Mounting: THT
Frequency: 20kHz
Number of channels: 6
Power dissipation: 34W
Operating voltage: 13.5...16.5/0...400V DC
Kind of integrated circuit: 3-phase motor controller; IPM
Collector-emitter voltage: 600V
Technology: Motion SPM® 45
Case: SPMAA-A26
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Operating temperature: -40...125°C
Output current: 15A
на замовлення 49 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1248.37 грн |
| 3+ | 1047.02 грн |
| 12+ | 934.84 грн |
| 24+ | 805.21 грн |
| FDD4243 |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -14A; 42W; DPAK
Power dissipation: 42W
Gate charge: 29nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -14A
Kind of channel: enhancement
Drain-source voltage: -40V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 69mΩ
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -14A; 42W; DPAK
Power dissipation: 42W
Gate charge: 29nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -14A
Kind of channel: enhancement
Drain-source voltage: -40V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 69mΩ
Mounting: SMD
на замовлення 2407 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 84.12 грн |
| 8+ | 55.51 грн |
| 10+ | 46.37 грн |
| 50+ | 31.41 грн |
| 100+ | 30.16 грн |
| NCS20071SN2T1G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 1; ±1.35÷18VDC,2.7÷36VDC
Type of integrated circuit: operational amplifier
Case: TSOP5
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Input offset voltage: 4.5mV
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Slew rate: 2.8V/μs
Bandwidth: 3MHz
Integrated circuit features: rail-to-rail output
Number of channels: single; 1
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 1; ±1.35÷18VDC,2.7÷36VDC
Type of integrated circuit: operational amplifier
Case: TSOP5
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Input offset voltage: 4.5mV
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Slew rate: 2.8V/μs
Bandwidth: 3MHz
Integrated circuit features: rail-to-rail output
Number of channels: single; 1
на замовлення 2181 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 38.48 грн |
| 16+ | 26.18 грн |
| 25+ | 24.51 грн |
| NTTFS002N04CLTAG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFN8
Case: WDFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 49nC
On-state resistance: 2.2mΩ
Gate-source voltage: ±20V
Power dissipation: 27W
Drain current: 142A
Drain-source voltage: 40V
Pulsed drain current: 706A
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFN8
Case: WDFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 49nC
On-state resistance: 2.2mΩ
Gate-source voltage: ±20V
Power dissipation: 27W
Drain current: 142A
Drain-source voltage: 40V
Pulsed drain current: 706A
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| NTTFS002N04CTAG |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 136A; Idm: 676A; 27W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 136A
Pulsed drain current: 676A
Power dissipation: 27W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 136A; Idm: 676A; 27W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 136A
Pulsed drain current: 676A
Power dissipation: 27W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| NVTFS002N04CLTAG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFN8
Case: WDFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 49nC
On-state resistance: 2.2mΩ
Gate-source voltage: ±20V
Power dissipation: 27W
Drain current: 142A
Drain-source voltage: 40V
Pulsed drain current: 706A
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFN8
Case: WDFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 49nC
On-state resistance: 2.2mΩ
Gate-source voltage: ±20V
Power dissipation: 27W
Drain current: 142A
Drain-source voltage: 40V
Pulsed drain current: 706A
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| NVTFS002N04CTAG |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 136A; Idm: 676A; 27W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 136A
Pulsed drain current: 676A
Power dissipation: 27W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 136A; Idm: 676A; 27W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 136A
Pulsed drain current: 676A
Power dissipation: 27W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| NVTFWS002N04CLTAG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFNW8
Case: WDFNW8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 49nC
On-state resistance: 2.2mΩ
Gate-source voltage: ±20V
Power dissipation: 27W
Drain current: 142A
Drain-source voltage: 40V
Pulsed drain current: 706A
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFNW8
Case: WDFNW8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 49nC
On-state resistance: 2.2mΩ
Gate-source voltage: ±20V
Power dissipation: 27W
Drain current: 142A
Drain-source voltage: 40V
Pulsed drain current: 706A
Kind of package: reel; tape
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| NVTFWS002N04CTAG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 136A; Idm: 676A; 27W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 136A
Pulsed drain current: 676A
Power dissipation: 27W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 136A; Idm: 676A; 27W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 136A
Pulsed drain current: 676A
Power dissipation: 27W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NCV6357MTWATXG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SMD; reel,tape; automotive industry
Type of integrated circuit: PMIC
Kind of package: reel; tape
Mounting: SMD
Application: automotive industry
Kind of integrated circuit: DC/DC converter
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SMD; reel,tape; automotive industry
Type of integrated circuit: PMIC
Kind of package: reel; tape
Mounting: SMD
Application: automotive industry
Kind of integrated circuit: DC/DC converter
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| NCP383LMUAJAATXG |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5÷2.8A; Ch: 2; N-Channel; SMD; uDFN10
Active logical level: low
Kind of output: N-Channel
Type of integrated circuit: power switch
Kind of package: reel; tape
Mounting: SMD
Case: uDFN10
Control voltage: 0...5.5V DC
On-state resistance: 95mΩ
Output current: 0.5...2.8A
Number of channels: 2
Supply voltage: 2.7...5.5V DC
Kind of integrated circuit: high-side
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5÷2.8A; Ch: 2; N-Channel; SMD; uDFN10
Active logical level: low
Kind of output: N-Channel
Type of integrated circuit: power switch
Kind of package: reel; tape
Mounting: SMD
Case: uDFN10
Control voltage: 0...5.5V DC
On-state resistance: 95mΩ
Output current: 0.5...2.8A
Number of channels: 2
Supply voltage: 2.7...5.5V DC
Kind of integrated circuit: high-side
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| MMBZ5250BLT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 20V; SMD; SOT23; reel,tape; single diode
Case: SOT23
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.3W
Tolerance: ±5%
Zener voltage: 20V
Manufacturer series: MMBZ52xxBLT1G
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 20V; SMD; SOT23; reel,tape; single diode
Case: SOT23
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.3W
Tolerance: ±5%
Zener voltage: 20V
Manufacturer series: MMBZ52xxBLT1G
Kind of package: reel; tape
на замовлення 5900 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 72+ | 6.26 грн |
| 107+ | 3.91 грн |
| 162+ | 2.58 грн |
| 195+ | 2.14 грн |
| 500+ | 1.40 грн |
| 1500+ | 1.25 грн |
| FQD13N10TM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.3A; 40W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.3A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: QFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.3A; 40W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.3A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: QFET®
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Мінімальне замовлення: 2500 шт
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| NSR0320MW2T1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 23V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 23V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 23V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 23V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
на замовлення 15144 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 16.11 грн |
| 34+ | 12.30 грн |
| 39+ | 10.72 грн |
| 58+ | 7.28 грн |
| 100+ | 6.10 грн |
| 250+ | 4.89 грн |
| 500+ | 4.16 грн |
| 1000+ | 3.60 грн |
| 3000+ | 2.92 грн |
| 2N4922G |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 30W; TO225
Kind of package: bulk
Mounting: THT
Type of transistor: NPN
Case: TO225
Collector current: 1A
Power dissipation: 30W
Current gain: 30...150
Frequency: 3MHz
Collector-emitter voltage: 60V
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 30W; TO225
Kind of package: bulk
Mounting: THT
Type of transistor: NPN
Case: TO225
Collector current: 1A
Power dissipation: 30W
Current gain: 30...150
Frequency: 3MHz
Collector-emitter voltage: 60V
Polarisation: bipolar
на замовлення 70 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 82.33 грн |
| 10+ | 49.77 грн |
| 25+ | 42.30 грн |
| MBR2545CTG |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO220-3; Ufmax: 0.72V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Max. forward voltage: 0.72V
Max. load current: 30A
Max. forward impulse current: 150A
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO220-3; Ufmax: 0.72V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Max. forward voltage: 0.72V
Max. load current: 30A
Max. forward impulse current: 150A
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
на замовлення 251 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 146.76 грн |
| 5+ | 103.87 грн |
| 10+ | 94.73 грн |
| HCPL2611 |
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Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 10Mbps; DIP8
Case: DIP8
Kind of output: Schmitt trigger
Type of optocoupler: optocoupler
Mounting: THT
Turn-off time: 12ns
Turn-on time: 50ns
Number of channels: 1
Slew rate: 2.5kV/μs
Transfer rate: 10Mbps
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 10Mbps; DIP8
Case: DIP8
Kind of output: Schmitt trigger
Type of optocoupler: optocoupler
Mounting: THT
Turn-off time: 12ns
Turn-on time: 50ns
Number of channels: 1
Slew rate: 2.5kV/μs
Transfer rate: 10Mbps
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| HCPL2611M |
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Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: logic; Uinsul: 5kV; 10Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: logic
Case: DIP8
Max. off-state voltage: 5V
Manufacturer series: HCPL2611M
Slew rate: 15kV/μs
Transfer rate: 10Mbps
Insulation voltage: 5kV
Turn-on time: 30ns
Output voltage: -500mV...7V
Turn-off time: 30ns
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: logic; Uinsul: 5kV; 10Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: logic
Case: DIP8
Max. off-state voltage: 5V
Manufacturer series: HCPL2611M
Slew rate: 15kV/μs
Transfer rate: 10Mbps
Insulation voltage: 5kV
Turn-on time: 30ns
Output voltage: -500mV...7V
Turn-off time: 30ns
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| MC74AC374DWG |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; AC; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Family: AC
Kind of output: 3-state
Supply voltage: 2...6V DC
Kind of package: tube
Manufacturer series: AC
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; AC; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Family: AC
Kind of output: 3-state
Supply voltage: 2...6V DC
Kind of package: tube
Manufacturer series: AC
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| MC74AC374DWR2G |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; AC; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Family: AC
Kind of output: 3-state
Supply voltage: 2...6V DC
Kind of package: reel; tape
Manufacturer series: AC
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; AC; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Family: AC
Kind of output: 3-state
Supply voltage: 2...6V DC
Kind of package: reel; tape
Manufacturer series: AC
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Мінімальне замовлення: 1000 шт
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| NXH600N65L4Q2F2SG |
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Виробник: ONSEMI
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 600A; PIM41; SiC
Technology: SiC
Gate-emitter voltage: ±20V
Collector current: 600A
Topology: NTC thermistor; three-level inverter; single-phase
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Application: for UPS; Inverter
Type of semiconductor module: IGBT
Case: PIM41
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 600A; PIM41; SiC
Technology: SiC
Gate-emitter voltage: ±20V
Collector current: 600A
Topology: NTC thermistor; three-level inverter; single-phase
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Application: for UPS; Inverter
Type of semiconductor module: IGBT
Case: PIM41
Mechanical mounting: screw
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Мінімальне замовлення: 36 шт
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| NXH160T120L2Q2F2S1G |
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Виробник: ONSEMI
Category: IGBT modules
Description: Module: IGBT; diode/transistor; 3-level inverter SPLIT-TNPC
Gate-emitter voltage: ±20V
Collector current: 181A
Pulsed collector current: 543A
Topology: 3-level inverter SPLIT-TNPC
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Case: PIM56
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; 3-level inverter SPLIT-TNPC
Gate-emitter voltage: ±20V
Collector current: 181A
Pulsed collector current: 543A
Topology: 3-level inverter SPLIT-TNPC
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Case: PIM56
Electrical mounting: Press-in PCB
Mechanical mounting: screw
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Мінімальне замовлення: 12 шт
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| NXH200T120H3Q2F2STNG |
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Виробник: ONSEMI
Category: IGBT modules
Description: Module: IGBT; Ic: 330A; PIM
Case: PIM
Collector current: 330A
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; Ic: 330A; PIM
Case: PIM
Collector current: 330A
Type of semiconductor module: IGBT
на замовлення 396 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 11260.36 грн |
| NXH200T120H3Q2F2SG |
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Виробник: ONSEMI
Category: IGBT modules
Description: Module: IGBT; Ic: 330A; PIM
Case: PIM
Collector current: 330A
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; Ic: 330A; PIM
Case: PIM
Collector current: 330A
Type of semiconductor module: IGBT
на замовлення 192 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 11260.36 грн |
| NXH450B100H4Q2F2SG |
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Виробник: ONSEMI
Category: IGBT modules
Description: Module: IGBT; Ic: 101A; PIM
Gate-emitter voltage: ±20V
Collector current: 101A
Type of semiconductor module: IGBT
Case: PIM
Category: IGBT modules
Description: Module: IGBT; Ic: 101A; PIM
Gate-emitter voltage: ±20V
Collector current: 101A
Type of semiconductor module: IGBT
Case: PIM
на замовлення 216 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 12785.24 грн |
| NTMFS0D6N03CT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 433A; Idm: 900A; 200W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 433A
Pulsed drain current: 900A
Power dissipation: 200W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 620µΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 433A; Idm: 900A; 200W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 433A
Pulsed drain current: 900A
Power dissipation: 200W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 620µΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
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Мінімальне замовлення: 1500 шт
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| MUN5112DW1T1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 22kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 22kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
на замовлення 2279 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.16 грн |
| 109+ | 3.82 грн |
| 175+ | 2.38 грн |
| 500+ | 1.76 грн |
| 1000+ | 1.56 грн |
| NCP1203P60G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; SMPS; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.25A
Mounting: THT
Case: DIP8
Topology: flyback
Number of channels: 1
Operating temperature: 0...125°C
Operating voltage: 7.8...16V DC
Kind of package: tube
Application: SMPS
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; SMPS; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.25A
Mounting: THT
Case: DIP8
Topology: flyback
Number of channels: 1
Operating temperature: 0...125°C
Operating voltage: 7.8...16V DC
Kind of package: tube
Application: SMPS
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| FSDM0465REWDTU |
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Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 1.4A; 650V; 66kHz; Ch: 1
Mounting: THT
Operating temperature: -25...85°C
Case: TO220F-6L
Frequency: 66kHz
Number of channels: 1
Output current: 1.4A
On-state resistance: 2.6Ω
Operating voltage: 8...19V DC
Power: 48W
Duty cycle factor: 77...87%
Kind of integrated circuit: AC/DC switcher; PWM controller
Output voltage: 650V
Input voltage: 85...265V
Topology: flyback
Application: SMPS
Type of integrated circuit: PMIC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 1.4A; 650V; 66kHz; Ch: 1
Mounting: THT
Operating temperature: -25...85°C
Case: TO220F-6L
Frequency: 66kHz
Number of channels: 1
Output current: 1.4A
On-state resistance: 2.6Ω
Operating voltage: 8...19V DC
Power: 48W
Duty cycle factor: 77...87%
Kind of integrated circuit: AC/DC switcher; PWM controller
Output voltage: 650V
Input voltage: 85...265V
Topology: flyback
Application: SMPS
Type of integrated circuit: PMIC
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| NDP6060 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 48A; Idm: 144A; 100W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 48A
Power dissipation: 100W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 25µΩ
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 144A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 48A; Idm: 144A; 100W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 48A
Power dissipation: 100W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 25µΩ
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 144A
товару немає в наявності
Мінімальне замовлення: 800 шт
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| MUN5233T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Current gain: 200
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Current gain: 200
на замовлення 25982 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 9.84 грн |
| 59+ | 7.06 грн |
| 88+ | 4.77 грн |
| 105+ | 3.99 грн |
| 250+ | 3.18 грн |
| 500+ | 2.71 грн |
| 1000+ | 2.33 грн |
| 1500+ | 2.14 грн |
| 3000+ | 1.88 грн |
| NTMFS4C302NT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 230A; Idm: 900A; 96W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 230A
Pulsed drain current: 900A
Power dissipation: 96W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 1.15mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 230A; Idm: 900A; 96W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 230A
Pulsed drain current: 900A
Power dissipation: 96W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 1.15mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhancement
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Мінімальне замовлення: 1500 шт
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| MJW18020G |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 30A; 250W; TO247-3
Frequency: 13MHz
Type of transistor: NPN
Kind of package: tube
Mounting: THT
Collector current: 30A
Current gain: 14...34
Power dissipation: 250W
Collector-emitter voltage: 450V
Polarisation: bipolar
Case: TO247-3
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 30A; 250W; TO247-3
Frequency: 13MHz
Type of transistor: NPN
Kind of package: tube
Mounting: THT
Collector current: 30A
Current gain: 14...34
Power dissipation: 250W
Collector-emitter voltage: 450V
Polarisation: bipolar
Case: TO247-3
на замовлення 43 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 506.51 грн |
| 3+ | 417.98 грн |
| 5+ | 386.40 грн |
| 10+ | 370.61 грн |
| MJF18004G |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 5A; 35W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 450V
Collector current: 5A
Power dissipation: 35W
Case: TO220FP
Current gain: 14...34
Mounting: THT
Kind of package: tube
Frequency: 13MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 5A; 35W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 450V
Collector current: 5A
Power dissipation: 35W
Case: TO220FP
Current gain: 14...34
Mounting: THT
Kind of package: tube
Frequency: 13MHz
на замовлення 82 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 165.55 грн |
| 10+ | 91.41 грн |
| 50+ | 82.27 грн |
| NCS20092DMR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 350kHz; Ch: 2; 1.8÷5.5VDC; Micro8; 4mV
Operating temperature: -40...125°C
Case: Micro8
Type of integrated circuit: operational amplifier
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 4mV
Slew rate: 0.15V/μs
Voltage supply range: 1.8...5.5V DC
Bandwidth: 350kHz
Kind of package: reel; tape
Number of channels: dual; 2
Mounting: SMT
Integrated circuit features: low power; rail-to-rail
Category: SMD operational amplifiers
Description: IC: operational amplifier; 350kHz; Ch: 2; 1.8÷5.5VDC; Micro8; 4mV
Operating temperature: -40...125°C
Case: Micro8
Type of integrated circuit: operational amplifier
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 4mV
Slew rate: 0.15V/μs
Voltage supply range: 1.8...5.5V DC
Bandwidth: 350kHz
Kind of package: reel; tape
Number of channels: dual; 2
Mounting: SMT
Integrated circuit features: low power; rail-to-rail
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| NCS20092DR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 350kHz; Ch: 2; 1.8÷5.5VDC; SO8; 4mV
Operating temperature: -40...125°C
Case: SO8
Type of integrated circuit: operational amplifier
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 4mV
Slew rate: 0.15V/μs
Voltage supply range: 1.8...5.5V DC
Bandwidth: 350kHz
Kind of package: reel; tape
Number of channels: dual; 2
Mounting: SMT
Integrated circuit features: low power; rail-to-rail
Category: SMD operational amplifiers
Description: IC: operational amplifier; 350kHz; Ch: 2; 1.8÷5.5VDC; SO8; 4mV
Operating temperature: -40...125°C
Case: SO8
Type of integrated circuit: operational amplifier
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 4mV
Slew rate: 0.15V/μs
Voltage supply range: 1.8...5.5V DC
Bandwidth: 350kHz
Kind of package: reel; tape
Number of channels: dual; 2
Mounting: SMT
Integrated circuit features: low power; rail-to-rail
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| NCS20092DTBR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 350kHz; Ch: 2; 1.8÷5.5VDC; TSSOP8; 4mV
Operating temperature: -40...125°C
Case: TSSOP8
Type of integrated circuit: operational amplifier
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 4mV
Slew rate: 0.15V/μs
Voltage supply range: 1.8...5.5V DC
Bandwidth: 350kHz
Kind of package: reel; tape
Number of channels: dual; 2
Mounting: SMT
Integrated circuit features: low power; rail-to-rail
Category: SMD operational amplifiers
Description: IC: operational amplifier; 350kHz; Ch: 2; 1.8÷5.5VDC; TSSOP8; 4mV
Operating temperature: -40...125°C
Case: TSSOP8
Type of integrated circuit: operational amplifier
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 4mV
Slew rate: 0.15V/μs
Voltage supply range: 1.8...5.5V DC
Bandwidth: 350kHz
Kind of package: reel; tape
Number of channels: dual; 2
Mounting: SMT
Integrated circuit features: low power; rail-to-rail
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| LE25U20AMB-AH |
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Виробник: ONSEMI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2MbFLASH; Flash: 256kx8bit; 30MHz; 2.3÷3.6V
Operating voltage: 2.3...3.6V
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Kind of memory: NOR
Flash memory organisation: 256kx8bit
Type of integrated circuit: FLASH memory
Memory: 2Mb FLASH
Operating frequency: 30MHz
Kind of interface: serial
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2MbFLASH; Flash: 256kx8bit; 30MHz; 2.3÷3.6V
Operating voltage: 2.3...3.6V
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Kind of memory: NOR
Flash memory organisation: 256kx8bit
Type of integrated circuit: FLASH memory
Memory: 2Mb FLASH
Operating frequency: 30MHz
Kind of interface: serial
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| LE25U20AQGTXG |
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Виробник: ONSEMI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2MbFLASH; Flash: 256kx8bit; 30MHz; 2.3÷3.6V
Operating voltage: 2.3...3.6V
Mounting: SMD
Case: WDFN8
Operating temperature: -40...85°C
Kind of memory: NOR
Flash memory organisation: 256kx8bit
Type of integrated circuit: FLASH memory
Memory: 2Mb FLASH
Operating frequency: 30MHz
Kind of interface: serial
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2MbFLASH; Flash: 256kx8bit; 30MHz; 2.3÷3.6V
Operating voltage: 2.3...3.6V
Mounting: SMD
Case: WDFN8
Operating temperature: -40...85°C
Kind of memory: NOR
Flash memory organisation: 256kx8bit
Type of integrated circuit: FLASH memory
Memory: 2Mb FLASH
Operating frequency: 30MHz
Kind of interface: serial
товару немає в наявності
Мінімальне замовлення: 2000 шт
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| FSQ0765RSUDTU |
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Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller,resonant mode controller; 2.28A; 650V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller; resonant mode controller
Output current: 2.28A
Output voltage: 650V
Frequency: 66.7kHz
Number of channels: 1
Case: TO220-6
Mounting: THT
Operating temperature: -25...85°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 1.6Ω
Power: 70W
Operating voltage: 8...19V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller,resonant mode controller; 2.28A; 650V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller; resonant mode controller
Output current: 2.28A
Output voltage: 650V
Frequency: 66.7kHz
Number of channels: 1
Case: TO220-6
Mounting: THT
Operating temperature: -25...85°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 1.6Ω
Power: 70W
Operating voltage: 8...19V DC
на замовлення 308 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 173.61 грн |
| 5+ | 144.59 грн |
| 25+ | 127.97 грн |
| 100+ | 125.48 грн |
| MC14018BDG |
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Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; divide by N,counter; CMOS; SMD; SOIC16; HEF4000B; tube
Operating temperature: -55...125°C
Family: HEF4000B
Technology: CMOS
Kind of integrated circuit: counter; divide by N
Type of integrated circuit: digital
Case: SOIC16
Mounting: SMD
Kind of package: tube
Supply voltage: 3...18V DC
Category: Counters/dividers
Description: IC: digital; divide by N,counter; CMOS; SMD; SOIC16; HEF4000B; tube
Operating temperature: -55...125°C
Family: HEF4000B
Technology: CMOS
Kind of integrated circuit: counter; divide by N
Type of integrated circuit: digital
Case: SOIC16
Mounting: SMD
Kind of package: tube
Supply voltage: 3...18V DC
на замовлення 34 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 48.32 грн |
| 11+ | 39.89 грн |
| FSA553UCX |
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Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer; SPST; Ch: 2; WLCSP9; 1.5÷3V
Type of integrated circuit: analog switch
Number of channels: 2
Mounting: SMD
Case: WLCSP9
Operating temperature: -40...85°C
Supply voltage: 1.5...3V
Kind of integrated circuit: demultiplexer
Output configuration: SPST
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer; SPST; Ch: 2; WLCSP9; 1.5÷3V
Type of integrated circuit: analog switch
Number of channels: 2
Mounting: SMD
Case: WLCSP9
Operating temperature: -40...85°C
Supply voltage: 1.5...3V
Kind of integrated circuit: demultiplexer
Output configuration: SPST
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| NTMFS5C410NLT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 900A; 56W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 330A
Pulsed drain current: 900A
Power dissipation: 56W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 820µΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 900A; 56W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 330A
Pulsed drain current: 900A
Power dissipation: 56W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 820µΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhancement
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Мінімальне замовлення: 1500 шт
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| SBC847BWT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
на замовлення 1100 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 100+ | 4.47 грн |
| 143+ | 2.91 грн |
| 197+ | 2.11 грн |
| 228+ | 1.83 грн |
| 500+ | 1.27 грн |
| 1000+ | 1.11 грн |
| BC847CWT3G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
товару немає в наявності
Мінімальне замовлення: 10000 шт
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| SBC847CWT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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| SBC847CWT3G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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| NCV1117DT12RKG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 12V; 1A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 12V
Output current: 1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 12V; 1A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 12V
Output current: 1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
на замовлення 485 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 38.48 грн |
| 17+ | 25.93 грн |
| 100+ | 22.10 грн |
| 250+ | 20.77 грн |
| NCV1117DTARKG |
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Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.5÷12V; 1A; DPAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.2V
Output voltage: 1.5...12V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: NCV1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Application: automotive industry
Input voltage: 1.25...20V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.5÷12V; 1A; DPAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.2V
Output voltage: 1.5...12V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: NCV1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Application: automotive industry
Input voltage: 1.25...20V
на замовлення 1336 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 44.74 грн |
| 13+ | 32.41 грн |
| NCV1117DT50RKG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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| NCV1117DT18RKG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; DPAK; SMD; Ch: 1
Mounting: SMD
Application: automotive industry
Output current: 1A
Number of channels: 1
Output voltage: 1.8V
Case: DPAK
Kind of voltage regulator: fixed; LDO; linear
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; DPAK; SMD; Ch: 1
Mounting: SMD
Application: automotive industry
Output current: 1A
Number of channels: 1
Output voltage: 1.8V
Case: DPAK
Kind of voltage regulator: fixed; LDO; linear
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
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| NCV1117DT18T5G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; DPAK; SMD; Ch: 1
Mounting: SMD
Application: automotive industry
Output current: 1A
Number of channels: 1
Output voltage: 1.8V
Case: DPAK
Kind of voltage regulator: fixed; LDO; linear
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; DPAK; SMD; Ch: 1
Mounting: SMD
Application: automotive industry
Output current: 1A
Number of channels: 1
Output voltage: 1.8V
Case: DPAK
Kind of voltage regulator: fixed; LDO; linear
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
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| NSVT65010MW6T1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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В кошику
од. на суму грн.
| NSVT65011MW6T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...500
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...500
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| LM7815CT |
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Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 1A; TO220-3; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 15V
Output current: 1A
Case: TO220-3
Mounting: THT
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 0.51...0.61mm
Input voltage: 17.5...30V
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 1A; TO220-3; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 15V
Output current: 1A
Case: TO220-3
Mounting: THT
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 0.51...0.61mm
Input voltage: 17.5...30V
товару немає в наявності
В кошику
од. на суму грн.

























