| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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NST3906F3T5G | onsemi |
Description: TRANS PNP 40V 0.2A SOT-1123Power - Max: 290 mW Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 200 mA Part Status: Active Supplier Device Package: SOT-1123 Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: SOT-1123 Packaging: Cut Tape (CT) |
на замовлення 16261 шт: термін постачання 21-31 дні (днів) |
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NST45010MW6T1G | onsemi |
Description: TRANS 2PNP 45V 100MA SC-88/SC70Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Matched Pair Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 380mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active |
на замовлення 377 шт: термін постачання 21-31 дні (днів) |
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NTGS3136PT1G | onsemi |
Description: MOSFET P-CH 20V 3.7A 6TSOPVgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: 6-TSOP Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 33mOhm @ 5.1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 1901 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) |
на замовлення 55967 шт: термін постачання 21-31 дні (днів) |
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NTGS3433T1G | onsemi |
Description: MOSFET P-CH 12V 2.35A 6TSOPPackaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.35A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 3.3A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-TSOP Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTHS4166NT1G | onsemi |
Description: MOSFET N-CH 30V 4.9A CHIPFETPackaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 4.9A, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: ChipFET™ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 15 V |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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NTLJS2103PTBG | onsemi |
Description: MOSFET P-CH 12V 3.5A 6WDFNPackaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: 6-WDFN (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1157 pF @ 6 V |
на замовлення 360 шт: термін постачання 21-31 дні (днів) |
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NTLUS3A40PZTAG | onsemi |
Description: MOSFET P-CH 20V 4A 6UDFNPackaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 6.4A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-UDFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V |
на замовлення 2394 шт: термін постачання 21-31 дні (днів) |
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NTLUS3A90PZTAG | onsemi |
Description: MOSFET P-CH 20V 2.6A 6UDFNPackaging: Cut Tape (CT) Package / Case: 6-PowerUFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 62mOhm @ 4A, 4.5V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-UDFN (1.6x1.6) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTTFS5116PLTAG | onsemi |
Description: MOSFET P-CH 60V 5.7A 8WDFNInput Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-WDFN (3.3x3.3) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 3.2W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
на замовлення 25762 шт: термін постачання 21-31 дні (днів) |
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NTUD3169CZT5G | onsemi |
Description: MOSFET N/P-CH 20V 0.22A SOT963Part Status: Active Supplier Device Package: SOT-963 Vgs(th) (Max) @ Id: 1V @ 250µA FET Feature: Logic Level Gate Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 12.5pF @ 15V Current - Continuous Drain (Id) @ 25°C: 220mA, 200mA Drain to Source Voltage (Vdss): 20V Power - Max: 125mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: SOT-963 Packaging: Cut Tape (CT) |
на замовлення 20680 шт: термін постачання 21-31 дні (днів) |
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NUP2114UCMR6T1G | onsemi |
Description: TVS DIODE 5VWM 10VC 6TSOPPackaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -40°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 0.8pF @ 1MHz Current - Peak Pulse (10/1000µs): 8A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: 6-TSOP Unidirectional Channels: 2 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 10V (Typ) Power Line Protection: Yes Part Status: Active |
на замовлення 2985 шт: термін постачання 21-31 дні (днів) |
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NUP2114UPXV5T1G | onsemi |
Description: TVS DIODE 5VWM 10VC SOT553Packaging: Cut Tape (CT) Package / Case: SOT-553 Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -40°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 0.8pF @ 1MHz Current - Peak Pulse (10/1000µs): 8A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SOT-553 Unidirectional Channels: 2 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 10V (Typ) Power Line Protection: Yes |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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NUP4114HMR6T1G | onsemi |
Description: TVS DIODE 5.5VWM 10VC 6TSOPPackaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -40°C ~ 125°C (TJ) Applications: Ethernet, HDMI Capacitance @ Frequency: 0.6pF @ 1MHz Current - Peak Pulse (10/1000µs): 8A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: 6-TSOP Unidirectional Channels: 4 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 10V Power Line Protection: Yes Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NVTR4503NT1G | onsemi |
Description: MOSFET N-CH 30V 1.5A SOT23-3Qualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 420mW (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
на замовлення 15128 шт: термін постачання 21-31 дні (днів) |
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NZ9F2V4ST5G | onsemi |
Description: DIODE ZENER 2.53V 250MW SOD923Tolerance: ±4% Packaging: Cut Tape (CT) Package / Case: SOD-923 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 2.53 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: SOD-923 Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 µA @ 1 V |
на замовлення 25445 шт: термін постачання 21-31 дні (днів) |
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NZQA6V8AXV5T1G | onsemi |
Description: TVS DIODE 4.3VWM 13VC SOT553Packaging: Cut Tape (CT) Package / Case: SOT-553 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 12pF @ 1MHz Current - Peak Pulse (10/1000µs): 1.6A (8/20µs) Voltage - Reverse Standoff (Typ): 4.3V Supplier Device Package: SOT-553 Unidirectional Channels: 4 Voltage - Breakdown (Min): 6.47V Voltage - Clamping (Max) @ Ipp: 13V Power - Peak Pulse: 20W Power Line Protection: No Part Status: Active |
на замовлення 27013 шт: термін постачання 21-31 дні (днів) |
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PACDN004SR | onsemi |
Description: TVS DIODE 5.5VWM SOT143-4Part Status: Obsolete Power Line Protection: No Unidirectional Channels: 2 Supplier Device Package: SOT-143-4 Voltage - Reverse Standoff (Typ): 5.5V (Max) Applications: Automotive Operating Temperature: -40°C ~ 85°C (TA) Type: Steering (Rail to Rail) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PACDN042Y3R | onsemi |
Description: TVS DIODE 5.5VWM 8VC SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 85°C (TA) Voltage - Reverse Standoff (Typ): 5.5V Supplier Device Package: SOT-23-3 (TO-236) Unidirectional Channels: 2 Voltage - Breakdown (Min): 6.2V Voltage - Clamping (Max) @ Ipp: 8V Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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SMUN2211T1G | onsemi |
Description: TRANS PREBIAS NPN 50V 0.1A SC59Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: SC-59 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 22885 шт: термін постачання 21-31 дні (днів) |
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SMUN5111DW1T1G | onsemi |
Description: TRANS PREBIAS 2PNP 50V SOT-363Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: SC-88/SC70-6/SOT-363 DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 300nA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 385mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
на замовлення 18020 шт: термін постачання 21-31 дні (днів) |
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SMUN5311DW1T1G | onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-363Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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SZMMBZ27VALT1G | onsemi |
Description: DIODE ZENER ARRAY 27V SOT-23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Automotive Current - Peak Pulse (10/1000µs): 1A Voltage - Reverse Standoff (Typ): 22V Supplier Device Package: SOT-23-3 (TO-236) Unidirectional Channels: 2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 25.65V Voltage - Clamping (Max) @ Ipp: 40V Power - Peak Pulse: 40W Power Line Protection: No Part Status: Active Tolerance: ±5% Configuration: 1 Pair Common Anode Voltage - Zener (Nom) (Vz): 27 V Grade: Automotive Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 22 V Qualification: AEC-Q101 |
на замовлення 19614 шт: термін постачання 21-31 дні (днів) |
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SZMMBZ27VCLT1G | onsemi |
Description: TVS DIODE 22VWM 38VC SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 1A Voltage - Reverse Standoff (Typ): 22V Supplier Device Package: SOT-23-3 (TO-236) Unidirectional Channels: 2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 25.65V Voltage - Clamping (Max) @ Ipp: 38V Power - Peak Pulse: 40W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 30020 шт: термін постачання 21-31 дні (днів) |
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SZMMBZ5V6ALT1G | onsemi |
Description: DIODE ZENER ARRAY 5.6V SOT-23-3Voltage - Zener (Nom) (Vz): 5.6 V Configuration: 1 Pair Common Anode Tolerance: ±5% Qualification: AEC-Q101 Grade: Automotive Power - Peak Pulse: 24W Voltage - Clamping (Max) @ Ipp: 8V Voltage - Breakdown (Min): 5.32V Bidirectional Channels: 1 Unidirectional Channels: 2 Supplier Device Package: SOT-23-3 (TO-236) Voltage - Reverse Standoff (Typ): 3V Current - Peak Pulse (10/1000µs): 3A Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Part Status: Active Power Line Protection: No Current - Reverse Leakage @ Vr: 5 µA @ 3 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 300 mW |
на замовлення 29359 шт: термін постачання 21-31 дні (днів) |
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SZNUP2105LT1G | onsemi |
Description: TVS DIODE 24VWM 44VC SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Capacitance @ Frequency: 30pF @ 1MHz Current - Peak Pulse (10/1000µs): 8A (8/20µs) Voltage - Reverse Standoff (Typ): 24V (Min) Supplier Device Package: SOT-23-3 (TO-236) Bidirectional Channels: 2 Voltage - Breakdown (Min): 26.2V Voltage - Clamping (Max) @ Ipp: 44V Power - Peak Pulse: 350W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDB060AN08A0 | onsemi |
Description: MOSFET N-CH 75V 16A/80A D2PAKInput Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 255W (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
на замовлення 2841 шт: термін постачання 21-31 дні (днів) |
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HUF76439S3ST | onsemi |
Description: MOSFET N-CH 60V 75A D2PAKRds On (Max) @ Id, Vgs: 12mOhm @ 75A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2745 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 180W (Tc) |
на замовлення 3864 шт: термін постачання 21-31 дні (днів) |
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FSUSB11MTCX | onsemi |
Description: IC USB SWITCH DUAL 1X1 14TSSOPNumber of Channels: 2 Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT Voltage - Supply, Single (V+): 1.65V ~ 5.5V Supplier Device Package: 14-TSSOP -3db Bandwidth: 350MHz On-State Resistance (Max): 1.5Ohm Applications: USB Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.173", 4.40mm Width) Features: Break-Before-Make, USB 1.1 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDD86250 | onsemi |
Description: MOSFET N-CH 150V 8A/50A DPAKSupplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.1W (Ta), 132W (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active |
на замовлення 3381 шт: термін постачання 21-31 дні (днів) |
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FDD5N50NZFTM | onsemi |
Description: MOSFET N-CH 500V 3.7A DPAKInput Capacitance (Ciss) (Max) @ Vds: 485 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 1.75Ohm @ 1.85A, 10V Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDMC8200S | onsemi |
Description: MOSFET 2N-CH 30V 6A/8.5A 8PWR33Supplier Device Package: 8-Power33 (3x3) Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V Current - Continuous Drain (Id) @ 25°C: 6A, 8.5A Drain to Source Voltage (Vdss): 30V Power - Max: 700mW, 1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
на замовлення 10742 шт: термін постачання 21-31 дні (днів) |
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LM431SCCMLX | onsemi |
Description: IC VREF SHUNT ADJ 0.5% SOT89-3Voltage - Output (Max): 36 V Current - Output: 100 mA Current - Cathode: 1 mA Voltage - Output (Min/Fixed): 2.495V Supplier Device Package: SOT-89-3 Operating Temperature: -25°C ~ 85°C (TA) Reference Type: Shunt Mounting Type: Surface Mount Output Type: Adjustable Temperature Coefficient: 50ppm/°C Typical Package / Case: TO-243AA Tolerance: ±0.5% Packaging: Cut Tape (CT) |
на замовлення 3594 шт: термін постачання 21-31 дні (днів) |
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NC7SV32L6X | onsemi |
Description: IC GATE OR 1CH 2-INP 6MICROPAK |
на замовлення 128005 шт: термін постачання 21-31 дні (днів) |
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GF1G | onsemi |
Description: DIODE STANDARD 400V 1A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
на замовлення 19450 шт: термін постачання 21-31 дні (днів) |
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FDB035N10A | onsemi |
Description: MOSFET N-CH 100V 120A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 75A, 10V Power Dissipation (Max): 333W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7295 pF @ 25 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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74LVTH573MTCX | onsemi |
Description: IC D-TYPE TRANSP 8:8 20-TSSOPSupplier Device Package: 20-TSSOP Delay Time - Propagation: 4.4ns Current - Output High, Low: 32mA, 64mA Independent Circuits: 1 Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C Logic Type: D-Type Transparent Latch Circuit: 8:8 Mounting Type: Surface Mount Output Type: Tri-State Package / Case: 20-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74LCX541BQX | onsemi |
Description: IC BUF NON-INVERT 3.6V 20DQFN Part Status: Obsolete Supplier Device Package: 20-DQFN (2.5x4.5) Current - Output High, Low: 24mA, 24mA Number of Bits per Element: 8 Voltage - Supply: 2V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Logic Type: Buffer, Non-Inverting Mounting Type: Surface Mount Output Type: 3-State Package / Case: 20-WFQFN Exposed Pad Packaging: Cut Tape (CT) Number of Elements: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDMC86102LZ | onsemi |
Description: MOSFET N-CH 100V 7A/18A 8MLPPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 10V Power Dissipation (Max): 2.3W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 50 V |
на замовлення 650 шт: термін постачання 21-31 дні (днів) |
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EGP20G | onsemi |
Description: DIODE STANDARD 400V 2A DO15Packaging: Cut Tape (CT) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-15 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
на замовлення 10787 шт: термін постачання 21-31 дні (днів) |
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SS18 | onsemi |
Description: DIODE SCHOTTKY 80V 1A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 125°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A Current - Reverse Leakage @ Vr: 200 µA @ 80 V |
на замовлення 6997 шт: термін постачання 21-31 дні (днів) |
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74LVT16374MTDX | onsemi |
Description: IC FF D-TYPE DUAL 8BIT 48TSSOP |
на замовлення 420 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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FDMC8622 | onsemi |
Description: MOSFET N-CH 100V 4A/16A 8MLPRds On (Max) @ Id, Vgs: 56mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 16A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 402 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: 8-MLP (3.3x3.3) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 31W (Tc) |
на замовлення 170 шт: термін постачання 21-31 дні (днів) |
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FDB075N15A | onsemi |
Description: MOSFET N-CH 150V 130A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 100A, 10V Power Dissipation (Max): 333W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7350 pF @ 75 V |
на замовлення 7 шт: термін постачання 21-31 дні (днів) |
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FDS8935 | onsemi |
Description: MOSFET 2P-CH 80V 2.1A 8SOICPart Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Rds On (Max) @ Id, Vgs: 183mOhm @ 2.1A, 10V Input Capacitance (Ciss) (Max) @ Vds: 879pF @ 40V Current - Continuous Drain (Id) @ 25°C: 2.1A Drain to Source Voltage (Vdss): 80V Power - Max: 1.6W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NC7SP32L6X | onsemi |
Description: IC GATE OR 1CH 2-INP 6MICROPAK |
на замовлення 5510 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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RGF1D | onsemi |
Description: DIODE GEN PURP 200V 1A DO214ACCurrent - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Cut Tape (CT) |
на замовлення 5805 шт: термін постачання 21-31 дні (днів) |
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NC7SP17L6X | onsemi |
Description: IC BUFF 0.9V/3.6V 6-MICROPAKPackaging: Cut Tape (CT) Package / Case: 6-UFDFN Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 0.9V ~ 3.6V Input Type: Schmitt Trigger Number of Bits per Element: 1 Current - Output High, Low: 2.6mA, 2.6mA Supplier Device Package: 6-MicroPak |
на замовлення 5471 шт: термін постачання 21-31 дні (днів) |
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RGF1B | onsemi |
Description: DIODE GEN PURP 100V 1A DO214AC |
на замовлення 6970 шт: термін постачання 21-31 дні (днів) |
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LM431SBCMFX | onsemi |
Description: IC VREF SHUNT ADJ 1% SOT23F-3Packaging: Cut Tape (CT) Tolerance: ±1% Package / Case: SOT-23-3 Flat Leads Temperature Coefficient: 50ppm/°C Typical Output Type: Adjustable Mounting Type: Surface Mount Reference Type: Shunt Operating Temperature: -25°C ~ 85°C (TA) Supplier Device Package: SOT-23F-3 Voltage - Output (Min/Fixed): 2.495V Part Status: Active Current - Cathode: 1 mA Current - Output: 100 mA Voltage - Output (Max): 36 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NC7WV14P6X | onsemi |
Description: IC INVERT SCHMITT 2CH 2-INP SC88 |
на замовлення 78633 шт: термін постачання 21-31 дні (днів) |
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KA431SAMFTF | onsemi |
Description: IC VREF SHUNT ADJ 1% SOT23F-3Packaging: Cut Tape (CT) Tolerance: ±1% Package / Case: SOT-23-3 Flat Leads Temperature Coefficient: 50ppm/°C Typical Output Type: Adjustable Mounting Type: Surface Mount Reference Type: Shunt Operating Temperature: -25°C ~ 85°C (TA) Supplier Device Package: SOT-23F-3 Voltage - Output (Min/Fixed): 2.495V Part Status: Active Current - Cathode: 1 mA Current - Output: 100 mA Voltage - Output (Max): 36 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MM74HC574MTCX | onsemi |
Description: IC FF D-TYPE 1-ELE 8-BITPackaging: Cut Tape (CT) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Number of Elements: 1 Function: Standard Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 6V Current - Quiescent (Iq): 8 µA Current - Output High, Low: 7.8mA, 7.8mA Trigger Type: Positive Edge Clock Frequency: 35 MHz Input Capacitance: 5 pF Supplier Device Package: 20-TSSOP Max Propagation Delay @ V, Max CL: 27ns @ 6V, 150pF Part Status: Active Number of Bits per Element: 8 |
на замовлення 476 шт: термін постачання 21-31 дні (днів) |
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NC7ST02M5X | onsemi |
Description: IC GATE NOR 1CH 2-INP SOT23-5 |
на замовлення 12 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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BSR56 | onsemi |
Description: JFET N-CH 40V SOT23-3Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 15 V Voltage - Cutoff (VGS off) @ Id: 4 V @ 0.5 nA Resistance - RDS(On): 25 Ohms Power - Max: 250 mW Supplier Device Package: SOT-23-3 Voltage - Breakdown (V(BR)GSS): 40 V FET Type: N-Channel Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74LVX273MTCX | onsemi |
Description: IC FF D-TYPE SGL 8-BIT 20-TSSOPNumber of Bits per Element: 8 Part Status: Active Max Propagation Delay @ V, Max CL: 14.5ns @ 3.3V, 50pF Supplier Device Package: 20-TSSOP Input Capacitance: 4 pF Clock Frequency: 90 MHz Trigger Type: Positive Edge Current - Output High, Low: 4mA, 4mA Current - Quiescent (Iq): 4 µA Voltage - Supply: 2V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Type: D-Type Function: Master Reset Number of Elements: 1 Mounting Type: Surface Mount Output Type: Non-Inverted Package / Case: 20-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
на замовлення 2339 шт: термін постачання 21-31 дні (днів) |
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MMBF5486 | onsemi |
Description: RF MOSFET JFET 15V SOT23-3Frequency: 400MHz Mounting Type: Surface Mount Current Rating (Amps): 20mA Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Voltage - Test: 15 V Voltage - Rated: 25 V Part Status: Active Supplier Device Package: SOT-23-3 Noise Figure: 4dB Technology: JFET Configuration: N-Channel |
на замовлення 141 шт: термін постачання 21-31 дні (днів) |
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FSB619 | onsemi |
Description: TRANS NPN 50V 2A SOT23-3Vce Saturation (Max) @ Ib, Ic: 320mV @ 50mA, 2A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 2 A Supplier Device Package: SOT-23-3 Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V Current - Collector Cutoff (Max): 100nA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74AC138MTCX | onsemi |
Description: IC DECODER/DEMUX 1X3:8 16-TSSOPPackaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Circuit: 1 x 3:8 Type: Decoder/Demultiplexer Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Independent Circuits: 1 Current - Output High, Low: 24mA, 24mA Voltage Supply Source: Single Supply Supplier Device Package: 16-TSSOP |
на замовлення 68361 шт: термін постачання 21-31 дні (днів) |
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FDLL4150 | onsemi |
Description: DIODE STANDARD 50V 200MA SOD80Operating Temperature - Junction: 175°C (Max) Supplier Device Package: SOD-80 Current - Average Rectified (Io): 200mA Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 6 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 100 nA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Voltage - DC Reverse (Vr) (Max): 50 V Part Status: Active |
на замовлення 27277 шт: термін постачання 21-31 дні (днів) |
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NC7SZ18P6X | onsemi |
Description: IC DEMULTIPLEXER 1 X 1:2 SC-88Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Circuit: 1 x 1:2 Type: Demultiplexer Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 5.5V Independent Circuits: 1 Current - Output High, Low: 32mA, 32mA Voltage Supply Source: Single Supply Supplier Device Package: SC-88 (SC-70-6) Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| NST3906F3T5G |
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Виробник: onsemi
Description: TRANS PNP 40V 0.2A SOT-1123
Power - Max: 290 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Active
Supplier Device Package: SOT-1123
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SOT-1123
Packaging: Cut Tape (CT)
Description: TRANS PNP 40V 0.2A SOT-1123
Power - Max: 290 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Active
Supplier Device Package: SOT-1123
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SOT-1123
Packaging: Cut Tape (CT)
на замовлення 16261 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 22.99 грн |
| 23+ | 13.29 грн |
| 100+ | 8.30 грн |
| 500+ | 5.75 грн |
| 1000+ | 5.09 грн |
| 2000+ | 4.53 грн |
| NST45010MW6T1G |
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Виробник: onsemi
Description: TRANS 2PNP 45V 100MA SC-88/SC70
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Description: TRANS 2PNP 45V 100MA SC-88/SC70
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
на замовлення 377 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 37.27 грн |
| 14+ | 22.37 грн |
| 100+ | 14.24 грн |
| NTGS3136PT1G |
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Виробник: onsemi
Description: MOSFET P-CH 20V 3.7A 6TSOP
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 1901 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 3.7A 6TSOP
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 1901 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
на замовлення 55967 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 76.91 грн |
| 10+ | 64.98 грн |
| 100+ | 49.82 грн |
| 500+ | 36.96 грн |
| 1000+ | 29.57 грн |
| NTGS3433T1G |
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Виробник: onsemi
Description: MOSFET P-CH 12V 2.35A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.35A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 5 V
Description: MOSFET P-CH 12V 2.35A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.35A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 5 V
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| NTHS4166NT1G |
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Виробник: onsemi
Description: MOSFET N-CH 30V 4.9A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4.9A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 15 V
Description: MOSFET N-CH 30V 4.9A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4.9A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 15 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 91.98 грн |
| 10+ | 55.89 грн |
| NTLJS2103PTBG |
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Виробник: onsemi
Description: MOSFET P-CH 12V 3.5A 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1157 pF @ 6 V
Description: MOSFET P-CH 12V 3.5A 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1157 pF @ 6 V
на замовлення 360 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 75.33 грн |
| 10+ | 45.28 грн |
| 100+ | 29.59 грн |
| NTLUS3A40PZTAG |
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Виробник: onsemi
Description: MOSFET P-CH 20V 4A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-UDFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V
Description: MOSFET P-CH 20V 4A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-UDFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V
на замовлення 2394 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 86.43 грн |
| 10+ | 52.61 грн |
| 100+ | 34.71 грн |
| 500+ | 25.35 грн |
| 1000+ | 23.02 грн |
| NTLUS3A90PZTAG |
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Виробник: onsemi
Description: MOSFET P-CH 20V 2.6A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-UDFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V
Description: MOSFET P-CH 20V 2.6A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-UDFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V
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| NTTFS5116PLTAG |
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Виробник: onsemi
Description: MOSFET P-CH 60V 5.7A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 60V 5.7A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
на замовлення 25762 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 107.05 грн |
| 10+ | 65.36 грн |
| 50+ | 48.84 грн |
| 100+ | 40.80 грн |
| 500+ | 31.97 грн |
| NTUD3169CZT5G |
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Виробник: onsemi
Description: MOSFET N/P-CH 20V 0.22A SOT963
Part Status: Active
Supplier Device Package: SOT-963
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 12.5pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 220mA, 200mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 125mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: SOT-963
Packaging: Cut Tape (CT)
Description: MOSFET N/P-CH 20V 0.22A SOT963
Part Status: Active
Supplier Device Package: SOT-963
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 12.5pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 220mA, 200mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 125mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: SOT-963
Packaging: Cut Tape (CT)
на замовлення 20680 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 22.99 грн |
| 23+ | 13.36 грн |
| 100+ | 8.36 грн |
| 500+ | 5.81 грн |
| 1000+ | 5.15 грн |
| 2000+ | 4.59 грн |
| NUP2114UCMR6T1G |
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Виробник: onsemi
Description: TVS DIODE 5VWM 10VC 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.8pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 6-TSOP
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power Line Protection: Yes
Part Status: Active
Description: TVS DIODE 5VWM 10VC 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.8pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 6-TSOP
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power Line Protection: Yes
Part Status: Active
на замовлення 2985 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 60.26 грн |
| 10+ | 36.04 грн |
| 50+ | 26.45 грн |
| 100+ | 21.88 грн |
| 500+ | 16.72 грн |
| NUP2114UPXV5T1G |
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Виробник: onsemi
Description: TVS DIODE 5VWM 10VC SOT553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.8pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-553
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power Line Protection: Yes
Description: TVS DIODE 5VWM 10VC SOT553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.8pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-553
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power Line Protection: Yes
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 29.34 грн |
| 23+ | 13.44 грн |
| 100+ | 9.86 грн |
| 500+ | 7.83 грн |
| NUP4114HMR6T1G |
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Виробник: onsemi
Description: TVS DIODE 5.5VWM 10VC 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 6-TSOP
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 10V
Power Line Protection: Yes
Part Status: Active
Description: TVS DIODE 5.5VWM 10VC 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 6-TSOP
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 10V
Power Line Protection: Yes
Part Status: Active
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од. на суму грн.
| NVTR4503NT1G |
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Виробник: onsemi
Description: MOSFET N-CH 30V 1.5A SOT23-3
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 420mW (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Description: MOSFET N-CH 30V 1.5A SOT23-3
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 420mW (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
на замовлення 15128 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 29.34 грн |
| 18+ | 17.49 грн |
| 100+ | 11.03 грн |
| 500+ | 7.72 грн |
| 1000+ | 6.85 грн |
| NZ9F2V4ST5G |
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Виробник: onsemi
Description: DIODE ZENER 2.53V 250MW SOD923
Tolerance: ±4%
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.53 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-923
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Description: DIODE ZENER 2.53V 250MW SOD923
Tolerance: ±4%
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.53 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-923
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
на замовлення 25445 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.92 грн |
| 15+ | 20.85 грн |
| 100+ | 10.53 грн |
| 500+ | 8.06 грн |
| 1000+ | 5.98 грн |
| 2000+ | 5.03 грн |
| NZQA6V8AXV5T1G |
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Виробник: onsemi
Description: TVS DIODE 4.3VWM 13VC SOT553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.6A (8/20µs)
Voltage - Reverse Standoff (Typ): 4.3V
Supplier Device Package: SOT-553
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.47V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 20W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 4.3VWM 13VC SOT553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.6A (8/20µs)
Voltage - Reverse Standoff (Typ): 4.3V
Supplier Device Package: SOT-553
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.47V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 20W
Power Line Protection: No
Part Status: Active
на замовлення 27013 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.68 грн |
| 15+ | 20.85 грн |
| 100+ | 13.23 грн |
| 500+ | 9.30 грн |
| 1000+ | 8.30 грн |
| 2000+ | 7.45 грн |
| PACDN004SR |
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Виробник: onsemi
Description: TVS DIODE 5.5VWM SOT143-4
Part Status: Obsolete
Power Line Protection: No
Unidirectional Channels: 2
Supplier Device Package: SOT-143-4
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Applications: Automotive
Operating Temperature: -40°C ~ 85°C (TA)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Packaging: Cut Tape (CT)
Description: TVS DIODE 5.5VWM SOT143-4
Part Status: Obsolete
Power Line Protection: No
Unidirectional Channels: 2
Supplier Device Package: SOT-143-4
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Applications: Automotive
Operating Temperature: -40°C ~ 85°C (TA)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| PACDN042Y3R |
![]() |
Виробник: onsemi
Description: TVS DIODE 5.5VWM 8VC SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 8V
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 5.5VWM 8VC SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 8V
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.13 грн |
| 17+ | 18.17 грн |
| 50+ | 13.12 грн |
| 100+ | 10.75 грн |
| 500+ | 8.01 грн |
| SMUN2211T1G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SC-59
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SC-59
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 22885 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 14.27 грн |
| 37+ | 8.40 грн |
| 100+ | 5.19 грн |
| 500+ | 3.55 грн |
| 1000+ | 3.12 грн |
| SMUN5111DW1T1G |
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Виробник: onsemi
Description: TRANS PREBIAS 2PNP 50V SOT-363
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SC-88/SC70-6/SOT-363
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300nA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 385mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS 2PNP 50V SOT-363
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SC-88/SC70-6/SOT-363
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300nA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 385mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
на замовлення 18020 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 19.82 грн |
| 27+ | 11.61 грн |
| 100+ | 7.25 грн |
| 500+ | 5.00 грн |
| 1000+ | 4.42 грн |
| SMUN5311DW1T1G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 19.03 грн |
| 28+ | 11.22 грн |
| 100+ | 7.01 грн |
| 500+ | 4.84 грн |
| 1000+ | 4.27 грн |
| SZMMBZ27VALT1G |
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Виробник: onsemi
Description: DIODE ZENER ARRAY 27V SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 1A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 25.65V
Voltage - Clamping (Max) @ Ipp: 40V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Active
Tolerance: ±5%
Configuration: 1 Pair Common Anode
Voltage - Zener (Nom) (Vz): 27 V
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 22 V
Qualification: AEC-Q101
Description: DIODE ZENER ARRAY 27V SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 1A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 25.65V
Voltage - Clamping (Max) @ Ipp: 40V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Active
Tolerance: ±5%
Configuration: 1 Pair Common Anode
Voltage - Zener (Nom) (Vz): 27 V
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 22 V
Qualification: AEC-Q101
на замовлення 19614 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 17.44 грн |
| 30+ | 10.31 грн |
| 50+ | 7.33 грн |
| 100+ | 5.98 грн |
| 500+ | 4.38 грн |
| SZMMBZ27VCLT1G |
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Виробник: onsemi
Description: TVS DIODE 22VWM 38VC SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 25.65V
Voltage - Clamping (Max) @ Ipp: 38V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 22VWM 38VC SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 25.65V
Voltage - Clamping (Max) @ Ipp: 38V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 30020 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 16.65 грн |
| 32+ | 9.77 грн |
| 50+ | 6.98 грн |
| 100+ | 5.69 грн |
| 500+ | 4.17 грн |
| SZMMBZ5V6ALT1G |
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Виробник: onsemi
Description: DIODE ZENER ARRAY 5.6V SOT-23-3
Voltage - Zener (Nom) (Vz): 5.6 V
Configuration: 1 Pair Common Anode
Tolerance: ±5%
Qualification: AEC-Q101
Grade: Automotive
Power - Peak Pulse: 24W
Voltage - Clamping (Max) @ Ipp: 8V
Voltage - Breakdown (Min): 5.32V
Bidirectional Channels: 1
Unidirectional Channels: 2
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - Reverse Standoff (Typ): 3V
Current - Peak Pulse (10/1000µs): 3A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Part Status: Active
Power Line Protection: No
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Description: DIODE ZENER ARRAY 5.6V SOT-23-3
Voltage - Zener (Nom) (Vz): 5.6 V
Configuration: 1 Pair Common Anode
Tolerance: ±5%
Qualification: AEC-Q101
Grade: Automotive
Power - Peak Pulse: 24W
Voltage - Clamping (Max) @ Ipp: 8V
Voltage - Breakdown (Min): 5.32V
Bidirectional Channels: 1
Unidirectional Channels: 2
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - Reverse Standoff (Typ): 3V
Current - Peak Pulse (10/1000µs): 3A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Part Status: Active
Power Line Protection: No
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
на замовлення 29359 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 17.44 грн |
| 30+ | 10.31 грн |
| 50+ | 7.33 грн |
| 100+ | 5.98 грн |
| 500+ | 4.38 грн |
| SZNUP2105LT1G |
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Виробник: onsemi
Description: TVS DIODE 24VWM 44VC SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 30pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Min)
Supplier Device Package: SOT-23-3 (TO-236)
Bidirectional Channels: 2
Voltage - Breakdown (Min): 26.2V
Voltage - Clamping (Max) @ Ipp: 44V
Power - Peak Pulse: 350W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 24VWM 44VC SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 30pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Min)
Supplier Device Package: SOT-23-3 (TO-236)
Bidirectional Channels: 2
Voltage - Breakdown (Min): 26.2V
Voltage - Clamping (Max) @ Ipp: 44V
Power - Peak Pulse: 350W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| FDB060AN08A0 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 75V 16A/80A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 255W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 75V 16A/80A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 255W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 2841 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 346.51 грн |
| 10+ | 221.05 грн |
| 100+ | 156.97 грн |
| HUF76439S3ST |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 75A D2PAK
Rds On (Max) @ Id, Vgs: 12mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2745 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 180W (Tc)
Description: MOSFET N-CH 60V 75A D2PAK
Rds On (Max) @ Id, Vgs: 12mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2745 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 180W (Tc)
на замовлення 3864 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 248.98 грн |
| 10+ | 156.22 грн |
| 50+ | 120.38 грн |
| 100+ | 102.12 грн |
| FSUSB11MTCX |
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Виробник: onsemi
Description: IC USB SWITCH DUAL 1X1 14TSSOP
Number of Channels: 2
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Supplier Device Package: 14-TSSOP
-3db Bandwidth: 350MHz
On-State Resistance (Max): 1.5Ohm
Applications: USB
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Features: Break-Before-Make, USB 1.1
Packaging: Cut Tape (CT)
Description: IC USB SWITCH DUAL 1X1 14TSSOP
Number of Channels: 2
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Supplier Device Package: 14-TSSOP
-3db Bandwidth: 350MHz
On-State Resistance (Max): 1.5Ohm
Applications: USB
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Features: Break-Before-Make, USB 1.1
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| FDD86250 |
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Виробник: onsemi
Description: MOSFET N-CH 150V 8A/50A DPAK
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 132W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Description: MOSFET N-CH 150V 8A/50A DPAK
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 132W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
на замовлення 3381 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 113.39 грн |
| 10+ | 80.56 грн |
| 100+ | 57.81 грн |
| 500+ | 40.42 грн |
| 1000+ | 37.62 грн |
| FDD5N50NZFTM |
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Виробник: onsemi
Description: MOSFET N-CH 500V 3.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 1.75Ohm @ 1.85A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 500V 3.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 1.75Ohm @ 1.85A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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| FDMC8200S |
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Виробник: onsemi
Description: MOSFET 2N-CH 30V 6A/8.5A 8PWR33
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 6A, 8.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 700mW, 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 30V 6A/8.5A 8PWR33
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 6A, 8.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 700mW, 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
на замовлення 10742 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 134.00 грн |
| 10+ | 82.08 грн |
| 100+ | 55.11 грн |
| 500+ | 40.84 грн |
| 1000+ | 37.34 грн |
| LM431SCCMLX |
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Виробник: onsemi
Description: IC VREF SHUNT ADJ 0.5% SOT89-3
Voltage - Output (Max): 36 V
Current - Output: 100 mA
Current - Cathode: 1 mA
Voltage - Output (Min/Fixed): 2.495V
Supplier Device Package: SOT-89-3
Operating Temperature: -25°C ~ 85°C (TA)
Reference Type: Shunt
Mounting Type: Surface Mount
Output Type: Adjustable
Temperature Coefficient: 50ppm/°C Typical
Package / Case: TO-243AA
Tolerance: ±0.5%
Packaging: Cut Tape (CT)
Description: IC VREF SHUNT ADJ 0.5% SOT89-3
Voltage - Output (Max): 36 V
Current - Output: 100 mA
Current - Cathode: 1 mA
Voltage - Output (Min/Fixed): 2.495V
Supplier Device Package: SOT-89-3
Operating Temperature: -25°C ~ 85°C (TA)
Reference Type: Shunt
Mounting Type: Surface Mount
Output Type: Adjustable
Temperature Coefficient: 50ppm/°C Typical
Package / Case: TO-243AA
Tolerance: ±0.5%
Packaging: Cut Tape (CT)
на замовлення 3594 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.51 грн |
| 14+ | 22.30 грн |
| 25+ | 19.91 грн |
| 100+ | 16.23 грн |
| 250+ | 15.06 грн |
| 500+ | 14.35 грн |
| 1000+ | 13.54 грн |
| NC7SV32L6X |
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Виробник: onsemi
Description: IC GATE OR 1CH 2-INP 6MICROPAK
Description: IC GATE OR 1CH 2-INP 6MICROPAK
на замовлення 128005 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 34.10 грн |
| 12+ | 27.56 грн |
| 25+ | 25.78 грн |
| 100+ | 19.34 грн |
| 250+ | 17.96 грн |
| 500+ | 15.19 грн |
| 1000+ | 11.55 грн |
| 2500+ | 11.22 грн |
| GF1G |
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Виробник: onsemi
Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 19450 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 42.03 грн |
| 13+ | 25.27 грн |
| 50+ | 18.39 грн |
| 100+ | 15.14 грн |
| 500+ | 11.41 грн |
| FDB035N10A |
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Виробник: onsemi
Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 75A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7295 pF @ 25 V
Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 75A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7295 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 421.84 грн |
| 10+ | 271.37 грн |
| 50+ | 213.49 грн |
| 100+ | 182.88 грн |
| 74LVTH573MTCX |
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Виробник: onsemi
Description: IC D-TYPE TRANSP 8:8 20-TSSOP
Supplier Device Package: 20-TSSOP
Delay Time - Propagation: 4.4ns
Current - Output High, Low: 32mA, 64mA
Independent Circuits: 1
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: D-Type Transparent Latch
Circuit: 8:8
Mounting Type: Surface Mount
Output Type: Tri-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: IC D-TYPE TRANSP 8:8 20-TSSOP
Supplier Device Package: 20-TSSOP
Delay Time - Propagation: 4.4ns
Current - Output High, Low: 32mA, 64mA
Independent Circuits: 1
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: D-Type Transparent Latch
Circuit: 8:8
Mounting Type: Surface Mount
Output Type: Tri-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
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| 74LCX541BQX |
Виробник: onsemi
Description: IC BUF NON-INVERT 3.6V 20DQFN
Part Status: Obsolete
Supplier Device Package: 20-DQFN (2.5x4.5)
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 8
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-WFQFN Exposed Pad
Packaging: Cut Tape (CT)
Number of Elements: 1
Description: IC BUF NON-INVERT 3.6V 20DQFN
Part Status: Obsolete
Supplier Device Package: 20-DQFN (2.5x4.5)
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 8
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-WFQFN Exposed Pad
Packaging: Cut Tape (CT)
Number of Elements: 1
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| FDMC86102LZ |
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Виробник: onsemi
Description: MOSFET N-CH 100V 7A/18A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 50 V
Description: MOSFET N-CH 100V 7A/18A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 50 V
на замовлення 650 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 202.20 грн |
| 10+ | 126.06 грн |
| 50+ | 96.27 грн |
| 100+ | 81.32 грн |
| 500+ | 65.50 грн |
| EGP20G |
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Виробник: onsemi
Description: DIODE STANDARD 400V 2A DO15
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE STANDARD 400V 2A DO15
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 10787 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 61.85 грн |
| 10+ | 38.64 грн |
| 100+ | 30.44 грн |
| 500+ | 22.14 грн |
| 1000+ | 20.07 грн |
| 2000+ | 18.33 грн |
| SS18 |
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Виробник: onsemi
Description: DIODE SCHOTTKY 80V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 80 V
Description: DIODE SCHOTTKY 80V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 80 V
на замовлення 6997 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 53.92 грн |
| 10+ | 32.53 грн |
| 100+ | 20.93 грн |
| 500+ | 14.94 грн |
| 1000+ | 13.43 грн |
| 2000+ | 12.15 грн |
| 74LVT16374MTDX |
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Виробник: onsemi
Description: IC FF D-TYPE DUAL 8BIT 48TSSOP
Description: IC FF D-TYPE DUAL 8BIT 48TSSOP
на замовлення 420 шт:
термін постачання 21-31 дні (днів)
| FDMC8622 |
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Виробник: onsemi
Description: MOSFET N-CH 100V 4A/16A 8MLP
Rds On (Max) @ Id, Vgs: 56mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 402 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 31W (Tc)
Description: MOSFET N-CH 100V 4A/16A 8MLP
Rds On (Max) @ Id, Vgs: 56mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 402 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 31W (Tc)
на замовлення 170 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 173.65 грн |
| 10+ | 107.59 грн |
| 50+ | 81.66 грн |
| 100+ | 68.78 грн |
| FDB075N15A |
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Виробник: onsemi
Description: MOSFET N-CH 150V 130A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 100A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7350 pF @ 75 V
Description: MOSFET N-CH 150V 130A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 100A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7350 pF @ 75 V
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 503.51 грн |
| FDS8935 |
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Виробник: onsemi
Description: MOSFET 2P-CH 80V 2.1A 8SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Rds On (Max) @ Id, Vgs: 183mOhm @ 2.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 879pF @ 40V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Drain to Source Voltage (Vdss): 80V
Power - Max: 1.6W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET 2P-CH 80V 2.1A 8SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Rds On (Max) @ Id, Vgs: 183mOhm @ 2.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 879pF @ 40V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Drain to Source Voltage (Vdss): 80V
Power - Max: 1.6W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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| NC7SP32L6X |
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Виробник: onsemi
Description: IC GATE OR 1CH 2-INP 6MICROPAK
Description: IC GATE OR 1CH 2-INP 6MICROPAK
на замовлення 5510 шт:
термін постачання 21-31 дні (днів)
| RGF1D |
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Виробник: onsemi
Description: DIODE GEN PURP 200V 1A DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 200V 1A DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
на замовлення 5805 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.47 грн |
| 11+ | 29.93 грн |
| 100+ | 22.37 грн |
| 500+ | 16.50 грн |
| 1000+ | 12.75 грн |
| 2000+ | 11.62 грн |
| NC7SP17L6X |
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Виробник: onsemi
Description: IC BUFF 0.9V/3.6V 6-MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 2.6mA, 2.6mA
Supplier Device Package: 6-MicroPak
Description: IC BUFF 0.9V/3.6V 6-MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 2.6mA, 2.6mA
Supplier Device Package: 6-MicroPak
на замовлення 5471 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 39.65 грн |
| 12+ | 26.65 грн |
| 25+ | 23.88 грн |
| 100+ | 19.52 грн |
| 250+ | 18.15 грн |
| 500+ | 17.32 грн |
| 1000+ | 16.37 грн |
| 2500+ | 15.66 грн |
| RGF1B |
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Виробник: onsemi
Description: DIODE GEN PURP 100V 1A DO214AC
Description: DIODE GEN PURP 100V 1A DO214AC
на замовлення 6970 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 33.30 грн |
| 12+ | 27.56 грн |
| 100+ | 20.57 грн |
| 500+ | 15.17 грн |
| 1000+ | 11.72 грн |
| 2000+ | 10.69 грн |
| LM431SBCMFX |
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Виробник: onsemi
Description: IC VREF SHUNT ADJ 1% SOT23F-3
Packaging: Cut Tape (CT)
Tolerance: ±1%
Package / Case: SOT-23-3 Flat Leads
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -25°C ~ 85°C (TA)
Supplier Device Package: SOT-23F-3
Voltage - Output (Min/Fixed): 2.495V
Part Status: Active
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Description: IC VREF SHUNT ADJ 1% SOT23F-3
Packaging: Cut Tape (CT)
Tolerance: ±1%
Package / Case: SOT-23-3 Flat Leads
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -25°C ~ 85°C (TA)
Supplier Device Package: SOT-23F-3
Voltage - Output (Min/Fixed): 2.495V
Part Status: Active
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
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| NC7WV14P6X |
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Виробник: onsemi
Description: IC INVERT SCHMITT 2CH 2-INP SC88
Description: IC INVERT SCHMITT 2CH 2-INP SC88
на замовлення 78633 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 45.99 грн |
| 10+ | 37.80 грн |
| 25+ | 35.28 грн |
| 100+ | 26.48 грн |
| 250+ | 24.59 грн |
| 500+ | 20.81 грн |
| 1000+ | 15.81 грн |
| KA431SAMFTF |
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Виробник: onsemi
Description: IC VREF SHUNT ADJ 1% SOT23F-3
Packaging: Cut Tape (CT)
Tolerance: ±1%
Package / Case: SOT-23-3 Flat Leads
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -25°C ~ 85°C (TA)
Supplier Device Package: SOT-23F-3
Voltage - Output (Min/Fixed): 2.495V
Part Status: Active
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Description: IC VREF SHUNT ADJ 1% SOT23F-3
Packaging: Cut Tape (CT)
Tolerance: ±1%
Package / Case: SOT-23-3 Flat Leads
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -25°C ~ 85°C (TA)
Supplier Device Package: SOT-23F-3
Voltage - Output (Min/Fixed): 2.495V
Part Status: Active
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
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од. на суму грн.
| MM74HC574MTCX |
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Виробник: onsemi
Description: IC FF D-TYPE 1-ELE 8-BIT
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 8 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 5 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 27ns @ 6V, 150pF
Part Status: Active
Number of Bits per Element: 8
Description: IC FF D-TYPE 1-ELE 8-BIT
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 8 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 5 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 27ns @ 6V, 150pF
Part Status: Active
Number of Bits per Element: 8
на замовлення 476 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 54.71 грн |
| 10+ | 37.57 грн |
| 25+ | 33.75 грн |
| 100+ | 27.77 грн |
| 250+ | 25.91 грн |
| NC7ST02M5X |
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Виробник: onsemi
Description: IC GATE NOR 1CH 2-INP SOT23-5
Description: IC GATE NOR 1CH 2-INP SOT23-5
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
| BSR56 |
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Виробник: onsemi
Description: JFET N-CH 40V SOT23-3
Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 4 V @ 0.5 nA
Resistance - RDS(On): 25 Ohms
Power - Max: 250 mW
Supplier Device Package: SOT-23-3
Voltage - Breakdown (V(BR)GSS): 40 V
FET Type: N-Channel
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: JFET N-CH 40V SOT23-3
Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 4 V @ 0.5 nA
Resistance - RDS(On): 25 Ohms
Power - Max: 250 mW
Supplier Device Package: SOT-23-3
Voltage - Breakdown (V(BR)GSS): 40 V
FET Type: N-Channel
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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од. на суму грн.
| 74LVX273MTCX |
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Виробник: onsemi
Description: IC FF D-TYPE SGL 8-BIT 20-TSSOP
Number of Bits per Element: 8
Part Status: Active
Max Propagation Delay @ V, Max CL: 14.5ns @ 3.3V, 50pF
Supplier Device Package: 20-TSSOP
Input Capacitance: 4 pF
Clock Frequency: 90 MHz
Trigger Type: Positive Edge
Current - Output High, Low: 4mA, 4mA
Current - Quiescent (Iq): 4 µA
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Type: D-Type
Function: Master Reset
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Non-Inverted
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: IC FF D-TYPE SGL 8-BIT 20-TSSOP
Number of Bits per Element: 8
Part Status: Active
Max Propagation Delay @ V, Max CL: 14.5ns @ 3.3V, 50pF
Supplier Device Package: 20-TSSOP
Input Capacitance: 4 pF
Clock Frequency: 90 MHz
Trigger Type: Positive Edge
Current - Output High, Low: 4mA, 4mA
Current - Quiescent (Iq): 4 µA
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Type: D-Type
Function: Master Reset
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Non-Inverted
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
на замовлення 2339 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 51.54 грн |
| 10+ | 35.35 грн |
| 25+ | 31.76 грн |
| 100+ | 26.10 грн |
| 250+ | 24.35 грн |
| 500+ | 23.28 грн |
| 1000+ | 22.63 грн |
| MMBF5486 |
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Виробник: onsemi
Description: RF MOSFET JFET 15V SOT23-3
Frequency: 400MHz
Mounting Type: Surface Mount
Current Rating (Amps): 20mA
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Voltage - Test: 15 V
Voltage - Rated: 25 V
Part Status: Active
Supplier Device Package: SOT-23-3
Noise Figure: 4dB
Technology: JFET
Configuration: N-Channel
Description: RF MOSFET JFET 15V SOT23-3
Frequency: 400MHz
Mounting Type: Surface Mount
Current Rating (Amps): 20mA
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Voltage - Test: 15 V
Voltage - Rated: 25 V
Part Status: Active
Supplier Device Package: SOT-23-3
Noise Figure: 4dB
Technology: JFET
Configuration: N-Channel
на замовлення 141 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.75 грн |
| 19+ | 16.49 грн |
| 50+ | 11.90 грн |
| 100+ | 9.76 грн |
| FSB619 |
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Виробник: onsemi
Description: TRANS NPN 50V 2A SOT23-3
Vce Saturation (Max) @ Ib, Ic: 320mV @ 50mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: SOT-23-3
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA
Description: TRANS NPN 50V 2A SOT23-3
Vce Saturation (Max) @ Ib, Ic: 320mV @ 50mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: SOT-23-3
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA
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од. на суму грн.
| 74AC138MTCX |
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Виробник: onsemi
Description: IC DECODER/DEMUX 1X3:8 16-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 3:8
Type: Decoder/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
Description: IC DECODER/DEMUX 1X3:8 16-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 3:8
Type: Decoder/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
на замовлення 68361 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 39.65 грн |
| 12+ | 27.11 грн |
| 25+ | 24.28 грн |
| 100+ | 19.86 грн |
| 250+ | 18.46 грн |
| 500+ | 17.62 грн |
| 1000+ | 16.90 грн |
| FDLL4150 |
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Виробник: onsemi
Description: DIODE STANDARD 50V 200MA SOD80
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-80
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 6 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Description: DIODE STANDARD 50V 200MA SOD80
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-80
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 6 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
на замовлення 27277 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 18.24 грн |
| 27+ | 11.38 грн |
| 100+ | 8.43 грн |
| 500+ | 6.37 грн |
| 1000+ | 5.65 грн |
| NC7SZ18P6X |
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Виробник: onsemi
Description: IC DEMULTIPLEXER 1 X 1:2 SC-88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Circuit: 1 x 1:2
Type: Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 32mA, 32mA
Voltage Supply Source: Single Supply
Supplier Device Package: SC-88 (SC-70-6)
Part Status: Active
Description: IC DEMULTIPLEXER 1 X 1:2 SC-88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Circuit: 1 x 1:2
Type: Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 32mA, 32mA
Voltage Supply Source: Single Supply
Supplier Device Package: SC-88 (SC-70-6)
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 7.93 грн |
| 66+ | 4.66 грн |
| 75+ | 4.12 грн |
| 100+ | 3.23 грн |
| 250+ | 2.94 грн |
| 500+ | 2.77 грн |
| 1000+ | 2.58 грн |










































