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FOD8320R2 FOD8320R2 onsemi fod8320-d.pdf Description: OPTOISO 5KV 1CH GATE DRIVER 5SOP
товар відсутній
FOD8316V FOD8316V onsemi fod8316-d.pdf Description: OPTOISO 4.243KV 1CH GT DVR 16SO
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 4243Vrms
Approval Agency: IEC/EN/DIN, UL
Supplier Device Package: 16-SO
Rise / Fall Time (Typ): 34ns, 34ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 300ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 15V ~ 30V
товар відсутній
FOD8316R2V FOD8316R2V onsemi fod8316-d.pdf Description: OPTOISO 4.243KV 1CH GT DVR 16SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 4243Vrms
Approval Agency: IEC/EN/DIN, UL
Supplier Device Package: 16-SO
Rise / Fall Time (Typ): 34ns, 34ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 300ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 15V ~ 30V
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
1+560.9 грн
10+ 391.65 грн
100+ 323.62 грн
FOD8320R2V FOD8320R2V onsemi fod8320-d.pdf Description: OPTOISO 5KV 1CH GATE DRIVER 5SOP
на замовлення 347 шт:
термін постачання 21-31 дні (днів)
1+477.73 грн
10+ 325.24 грн
100+ 266.43 грн
FOD8316R2 FOD8316R2 onsemi fod8316-d.pdf Description: OPTOISO 4.243KV 1CH GT DVR 16SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 4243Vrms
Approval Agency: UL
Supplier Device Package: 16-SO
Rise / Fall Time (Typ): 34ns, 34ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 300ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 15V ~ 30V
на замовлення 722 шт:
термін постачання 21-31 дні (днів)
1+560.9 грн
10+ 391.65 грн
100+ 323.62 грн
FAN7631SJX FAN7631SJX onsemi fan7631-d.pdf Description: IC CTLR PFM RESON CONV 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 130°C
Voltage - Supply: 11.1V ~ 21V
Applications: Resonant Converter Controller
Supplier Device Package: 16-SOP
Part Status: Active
Current - Supply: 10 mA
DigiKey Programmable: Not Verified
товар відсутній
FDMC86160 FDMC86160 onsemi fdmc86160-d.pdf Description: MOSFET N CH 100V 9A POWER33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 43A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 10V
Power Dissipation (Max): 2.3W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 50 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+70.83 грн
6000+ 65.64 грн
9000+ 63.47 грн
Мінімальне замовлення: 3000
FGH75T65UPD FGH75T65UPD onsemi fgh75t65upd-d.pdf Description: IGBT TRENCH FS 650V 150A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 85 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/166ns
Switching Energy: 2.85mJ (on), 1.2mJ (off)
Test Condition: 400V, 75A, 3Ohm, 15V
Gate Charge: 385 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 375 W
на замовлення 863 шт:
термін постачання 21-31 дні (днів)
1+412.32 грн
30+ 316.75 грн
120+ 283.4 грн
510+ 234.67 грн
FGA20S125P FGA20S125P onsemi fga20s125p-d.pdf Description: IGBT 1250V 40A 250W TO-3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Gate Charge: 129 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1250 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 250 W
товар відсутній
FDMC86520DC FDMC86520DC onsemi fdmc86520dc-d.pdf Description: MOSFET N-CH 60V 17A/40A DLCOOL33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 17A, 10V
Power Dissipation (Max): 3W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: Dual Cool ™ 33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 30 V
на замовлення 14945 шт:
термін постачання 21-31 дні (днів)
3000+100.27 грн
6000+ 92.93 грн
Мінімальне замовлення: 3000
FCB20N60F-F085 FCB20N60F-F085 onsemi fcb20n60f_f085-d.pdf Description: MOSFET N-CH 600V 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 20A, 10V
Power Dissipation (Max): 405W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2035 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
FDMC86520DC FDMC86520DC onsemi fdmc86520dc-d.pdf Description: MOSFET N-CH 60V 17A/40A DLCOOL33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 17A, 10V
Power Dissipation (Max): 3W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: Dual Cool ™ 33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 30 V
на замовлення 14945 шт:
термін постачання 21-31 дні (днів)
2+199.76 грн
10+ 172.79 грн
100+ 141.57 грн
500+ 113.1 грн
1000+ 95.38 грн
Мінімальне замовлення: 2
FDMC86160 FDMC86160 onsemi fdmc86160-d.pdf Description: MOSFET N CH 100V 9A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 43A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 10V
Power Dissipation (Max): 2.3W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 50 V
на замовлення 11377 шт:
термін постачання 21-31 дні (днів)
2+157.11 грн
10+ 125.69 грн
100+ 100 грн
500+ 79.41 грн
1000+ 67.37 грн
Мінімальне замовлення: 2
FCD600N60Z FCD600N60Z onsemi fcd600n60z-d.pdf Description: MOSFET N-CH 600V 7.4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.7A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V
на замовлення 16437 шт:
термін постачання 21-31 дні (днів)
3+126.54 грн
10+ 101.45 грн
100+ 80.76 грн
500+ 64.13 грн
1000+ 54.42 грн
Мінімальне замовлення: 3
FOD8318R2V FOD8318R2V onsemi fod8318-d.pdf Description: OPTOISO 4.243KV GATE DRIVER 16SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 4243Vrms
Approval Agency: IEC/EN/DIN, UL
Supplier Device Package: 16-SO
Rise / Fall Time (Typ): 34ns, 34ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 300ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 15V ~ 30V
товар відсутній
FOD8318R2V FOD8318R2V onsemi fod8318-d.pdf Description: OPTOISO 4.243KV GATE DRIVER 16SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 4243Vrms
Approval Agency: IEC/EN/DIN, UL
Supplier Device Package: 16-SO
Rise / Fall Time (Typ): 34ns, 34ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 300ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 15V ~ 30V
на замовлення 469 шт:
термін постачання 21-31 дні (днів)
1+645.5 грн
10+ 450.86 грн
100+ 372.54 грн
FDPC8013S FDPC8013S onsemi fdpc8013s-d.pdf Description: MOSFET 2N-CH 30V 13A PWRCLIP-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW, 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 26A
Input Capacitance (Ciss) (Max) @ Vds: 827pF @ 15V
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Powerclip-33
Part Status: Active
на замовлення 3942 шт:
термін постачання 21-31 дні (днів)
2+149.29 грн
10+ 119.25 грн
100+ 94.88 грн
500+ 75.34 грн
1000+ 63.93 грн
Мінімальне замовлення: 2
FDMQ86530L FDMQ86530L onsemi fdmq86530l-d.pdf Description: MOSFET 4N-CH 60V 8A 12MLP
Packaging: Cut Tape (CT)
Package / Case: 12-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 2295pF @ 30V
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 12-MLP (5x4.5)
на замовлення 2332 шт:
термін постачання 21-31 дні (днів)
2+200.48 грн
10+ 161.9 грн
100+ 131 грн
500+ 109.28 грн
1000+ 93.57 грн
Мінімальне замовлення: 2
FCD380N60E FCD380N60E onsemi fcd380n60e-d.pdf Description: MOSFET N-CH 600V 10.2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
на замовлення 4899 шт:
термін постачання 21-31 дні (днів)
2+153.56 грн
10+ 122.88 грн
100+ 97.81 грн
500+ 77.67 грн
1000+ 65.9 грн
Мінімальне замовлення: 2
FCB20N60F-F085 FCB20N60F-F085 onsemi fcb20n60f_f085-d.pdf Description: MOSFET N-CH 600V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 20A, 10V
Power Dissipation (Max): 405W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2035 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
FDPC8013S FDPC8013S onsemi fdpc8013s-d.pdf Description: MOSFET 2N-CH 30V 13A PWRCLIP-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW, 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 26A
Input Capacitance (Ciss) (Max) @ Vds: 827pF @ 15V
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Powerclip-33
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+67.2 грн
Мінімальне замовлення: 3000
FCD600N60Z FCD600N60Z onsemi fcd600n60z-d.pdf Description: MOSFET N-CH 600V 7.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.7A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
2500+57.2 грн
5000+ 53.01 грн
Мінімальне замовлення: 2500
FDMQ86530L FDMQ86530L onsemi fdmq86530l-d.pdf Description: MOSFET 4N-CH 60V 8A 12MLP
Packaging: Tape & Reel (TR)
Package / Case: 12-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 2295pF @ 30V
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 12-MLP (5x4.5)
на замовлення 860 шт:
термін постачання 21-31 дні (днів)
FCD380N60E FCD380N60E onsemi fcd380n60e-d.pdf Description: MOSFET N-CH 600V 10.2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+69.27 грн
Мінімальне замовлення: 2500
FDD770N15A FDD770N15A onsemi fdd770n15a-d.pdf Description: MOSFET N CH 150V 18A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 12A, 10V
Power Dissipation (Max): 56.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 75 V
товар відсутній
FDMF6821A FDMF6821A onsemi fdmf6821a-d.pdf Description: IC HALF BRIDGE DRIVER 60A 40PQFN
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit, Status Flag
Package / Case: 40-PowerTFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 1Ohm LS, 1Ohm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 60A
Technology: DrMOS
Voltage - Load: 3V ~ 16V
Supplier Device Package: 40-PQFN (6x6)
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+191.75 грн
Мінімальне замовлення: 3000
FDB38N30U FDB38N30U onsemi fdb38n30u-d.pdf Description: MOSFET N CH 300V 38A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 19A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3340 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
800+125.43 грн
Мінімальне замовлення: 800
FCH041N60E FCH041N60E onsemi ONSM-S-A0003584580-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 77A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 39A, 10V
Power Dissipation (Max): 592W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 100 V
на замовлення 125 шт:
термін постачання 21-31 дні (днів)
1+830.34 грн
30+ 647.56 грн
120+ 609.47 грн
FDMA1430JP FDMA1430JP onsemi fdma1430jp-d.pdf Description: FET/BJT NPN/P CH 30V 2.9A MICROF
Packaging: Tape & Reel (TR)
Voltage - Rated: 30V
Package / Case: 6-VDFN Exposed Pad
Current Rating (Amps): 2.9A
Mounting Type: Surface Mount
Transistor Type: NPN, P-Channel
Applications: Load Switch
Supplier Device Package: 6-MicroFET (2x2)
товар відсутній
FGH50T65UPD FGH50T65UPD onsemi fgh50t65upd-d.pdf Description: IGBT TRENCH/FS 650V 100A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/160ns
Switching Energy: 2.7mJ (on), 740µJ (off)
Test Condition: 400V, 50A, 6Ohm, 15V
Gate Charge: 230 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 340 W
на замовлення 363 шт:
термін постачання 21-31 дні (днів)
1+406.64 грн
30+ 312.12 грн
120+ 279.28 грн
FOD8318R2 FOD8318R2 onsemi fod8318-d.pdf Description: OPTOISO 4.243KV 1CH GT DVR 16SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 4243Vrms
Approval Agency: UL
Supplier Device Package: 16-SO
Rise / Fall Time (Typ): 34ns, 34ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 300ns
Number of Channels: 1
Voltage - Output Supply: 15V ~ 30V
товар відсутній
FOD8318V FOD8318V onsemi fod8318-d.pdf Description: OPTOISO 4.243KV GATE DRIVER 16SO
товар відсутній
FDMS8320LDC FDMS8320LDC onsemi fdms8320ldc-d.pdf Description: MOSFET N-CH 40V 44A DLCOOL56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 44A, 10V
Power Dissipation (Max): 3.2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11635 pF @ 20 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+93.42 грн
Мінімальне замовлення: 3000
FOD8318 FOD8318 onsemi fod8318-d.pdf Description: OPTOISO 4.243KV 1CH GT DVR 16SO
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 4243Vrms
Approval Agency: UL
Supplier Device Package: 16-SO
Rise / Fall Time (Typ): 34ns, 34ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 300ns
Number of Channels: 1
Voltage - Output Supply: 15V ~ 30V
на замовлення 2970 шт:
термін постачання 21-31 дні (днів)
1+560.9 грн
10+ 391.65 грн
100+ 323.62 грн
500+ 265.99 грн
1000+ 251.48 грн
2000+ 245.68 грн
FGAF40N60SMD FGAF40N60SMD onsemi fgaf40n60smd-d.pdf Description: IGBT FIELD STOP 600V 80A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 36 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Supplier Device Package: TO-3PF
IGBT Type: Field Stop
Td (on/off) @ 25°C: 12ns/92ns
Switching Energy: 870µJ (on), 260µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 119 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 115 W
товар відсутній
FDD4N60NZ FDD4N60NZ onsemi fdd4n60nz-d.pdf Description: MOSFET N-CH 600V 3.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.7A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
товар відсутній
FOD8321R2V FOD8321R2V onsemi fod8321-d.pdf Description: OPTOISO 5KV 1CH GATE DRIVER 5SOP
товар відсутній
FOD8321R2 FOD8321R2 onsemi fod8321-d.pdf Description: OPTOISO 5KV 1CH GATE DRIVER 5SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.346", 8.80mm Width), 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: UL
Supplier Device Package: 5-SOP
Rise / Fall Time (Typ): 60ns, 60ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 300ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 16V ~ 30V
товар відсутній
FDMC86248 FDMC86248 onsemi fdmc86248-d.pdf Description: MOSFET N CH 150V 3.4A POWER33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.4A, 10V
Power Dissipation (Max): 2.3W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250mA
Supplier Device Package: Power33
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 75 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+57.66 грн
6000+ 53.43 грн
9000+ 51.67 грн
Мінімальне замовлення: 3000
FGH30S130P FGH30S130P onsemi fgh30s130p-d.pdf Description: IGBT 1300V 60A 500W TO-247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Gate Charge: 78 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1300 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 500 W
товар відсутній
FDMA8878 FDMA8878 onsemi fdma8878-d.pdf Description: MOSFET N-CH 30V 9A/10A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 10A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V
товар відсутній
FGA25S125P FGA25S125P onsemi fga25s125p-d.pdf Description: IGBT 1250V 50A 250W TO-3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 25A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Gate Charge: 204 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1250 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 250 W
товар відсутній
FDMC7208S FDMC7208S onsemi fdmc7208s-d.pdf Description: MOSFET 2N-CH 30V 12A/16A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A, 16A
Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V
Rds On (Max) @ Id, Vgs: 9mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
на замовлення 2685 шт:
термін постачання 21-31 дні (днів)
FFH75H60S FFH75H60S onsemi ffh75h60s-d.pdf Description: DIODE GEN PURP 600V 75A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 75 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
на замовлення 1422 шт:
термін постачання 21-31 дні (днів)
2+280.81 грн
10+ 227.35 грн
100+ 183.89 грн
500+ 153.4 грн
1000+ 131.35 грн
Мінімальне замовлення: 2
FDMC8327L FDMC8327L onsemi fdmc8327l-d.pdf Description: MOSFET N-CH 40V 12A/14A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 12A, 10V
Power Dissipation (Max): 2.3W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 20 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+31.18 грн
6000+ 28.59 грн
9000+ 27.27 грн
Мінімальне замовлення: 3000
FOD8321V FOD8321V onsemi fod8321-d.pdf Description: OPTOISO 5KV 1CH GATE DRIVER 5SOP
товар відсутній
FSA644UCX FSA644UCX onsemi FAIR-S-A0001476110-1.pdf?t.download=true&u=5oefqw Description: IC INTFACE SPECIALIZED 36WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 36-UFBGA, WLCSP
Mounting Type: Surface Mount
Voltage - Supply: 1.65V ~ 4.5V
Applications: Cell Phone
Supplier Device Package: 36-WLCSP (2.43x2.43)
Part Status: Obsolete
товар відсутній
FDMS8820 FDMS8820 onsemi fdms8820-d.pdf Description: MOSFET N-CH 30V 28A/116A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 116A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 28A, 10V
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5315 pF @ 15 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+33.87 грн
6000+ 31.06 грн
9000+ 29.62 грн
Мінімальне замовлення: 3000
FGH40T65UPD FGH40T65UPD onsemi fgh40t65upd-d.pdf Description: IGBT TRENCH/FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 43 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/144ns
Switching Energy: 1.59mJ (on), 580µJ (off)
Test Condition: 400V, 40A, 7Ohm, 15V
Gate Charge: 177 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 268 W
товар відсутній
FXMHD103UMX FXMHD103UMX onsemi FXMHD103_Rev_1.0.2.pdf Description: IC INTERFACE SPECIALIZED 12UMLP
Packaging: Tape & Reel (TR)
Package / Case: 12-UFQFN
Mounting Type: Surface Mount
Voltage - Supply: 1.6V ~ 3.6V
Applications: Cell Phones, Digital Cameras, Media Players
Supplier Device Package: 12-UMLP (1.8x1.8)
товар відсутній
FXWA9306L8X FXWA9306L8X onsemi fxwa9306-d.pdf Description: IC TRANSLATOR BIDIR 8MICROPAK
Packaging: Tape & Reel (TR)
Features: Auto-Direction Sensing
Package / Case: 8-UFQFN
Output Type: Open Drain, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-MicroPak™
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1 V ~ 5.5 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
на замовлення 90000 шт:
термін постачання 21-31 дні (днів)
5000+25.38 грн
10000+ 23.67 грн
25000+ 22.91 грн
Мінімальне замовлення: 5000
HUF76633P3-F085 HUF76633P3-F085 onsemi Description: MOSFET N-CH 100V 39A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 39A, 10V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V
товар відсутній
DFB2080 DFB2080 onsemi dfb2080-d.pdf Description: BRIDGE RECT 1PHASE 800V 20A TS6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 1200 шт:
термін постачання 21-31 дні (днів)
2+181.99 грн
15+ 145.49 грн
105+ 115.8 грн
510+ 91.96 грн
1005+ 78.02 грн
Мінімальне замовлення: 2
DFB2040 DFB2040 onsemi dfb2080-d.pdf Description: BRIDGE RECT 1P 400V 20A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 1200 шт:
термін постачання 21-31 дні (днів)
2+184.12 грн
10+ 146.98 грн
100+ 116.99 грн
500+ 92.9 грн
1200+ 78.83 грн
Мінімальне замовлення: 2
FXL6408UMX FXL6408UMX onsemi fxl6408-d.pdf Description: IC XPNDR 400KHZ I2C 16UMLP
Features: POR
Packaging: Tape & Reel (TR)
Package / Case: 16-UFQFN
Output Type: Open Drain
Mounting Type: Surface Mount
Interface: I²C
Number of I/O: 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 4V
Clock Frequency: 400 kHz
Interrupt Output: Yes
Supplier Device Package: 16-UMLP (1.8x2.6)
Current - Output Source/Sink: 6mA
Part Status: Active
DigiKey Programmable: Not Verified
товар відсутній
FSBB30CH60CT FSBB30CH60CT onsemi fsbb30ch60c-d.pdf Description: MODULE SPM 600V 30A SPMEC
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Part Status: Obsolete
Current: 30 A
Voltage: 600 V
товар відсутній
FSL137MRIN FSL137MRIN onsemi fsl137mrin-d.pdf Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 67%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.5V ~ 26V
Supplier Device Package: 8-DIP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 12 V
Part Status: Active
Power (Watts): 30 W
на замовлення 28 шт:
термін постачання 21-31 дні (днів)
3+120.14 грн
10+ 103.51 грн
25+ 97.62 грн
Мінімальне замовлення: 3
HUF76639S3ST-F085 HUF76639S3ST-F085 onsemi huf76639s3s-d.pdf Description: MOSFET N CH 100V 51A TO-263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 51A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
товар відсутній
FDMS030N06B FDMS030N06B onsemi fdms030n06b-d.pdf Description: MOSFET N-CH 60V 22.1A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.1A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7560 pF @ 30 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+108.62 грн
Мінімальне замовлення: 3000
FDMS8090 FDMS8090 onsemi fdms8090-d.pdf Description: MOSFET 2N-CH 100V 10A 8MLP PWR56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (5x6), Power56
товар відсутній
FOD8320R2 fod8320-d.pdf
FOD8320R2
Виробник: onsemi
Description: OPTOISO 5KV 1CH GATE DRIVER 5SOP
товар відсутній
FOD8316V fod8316-d.pdf
FOD8316V
Виробник: onsemi
Description: OPTOISO 4.243KV 1CH GT DVR 16SO
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 4243Vrms
Approval Agency: IEC/EN/DIN, UL
Supplier Device Package: 16-SO
Rise / Fall Time (Typ): 34ns, 34ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 300ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 15V ~ 30V
товар відсутній
FOD8316R2V fod8316-d.pdf
FOD8316R2V
Виробник: onsemi
Description: OPTOISO 4.243KV 1CH GT DVR 16SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 4243Vrms
Approval Agency: IEC/EN/DIN, UL
Supplier Device Package: 16-SO
Rise / Fall Time (Typ): 34ns, 34ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 300ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 15V ~ 30V
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+560.9 грн
10+ 391.65 грн
100+ 323.62 грн
FOD8320R2V fod8320-d.pdf
FOD8320R2V
Виробник: onsemi
Description: OPTOISO 5KV 1CH GATE DRIVER 5SOP
на замовлення 347 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+477.73 грн
10+ 325.24 грн
100+ 266.43 грн
FOD8316R2 fod8316-d.pdf
FOD8316R2
Виробник: onsemi
Description: OPTOISO 4.243KV 1CH GT DVR 16SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 4243Vrms
Approval Agency: UL
Supplier Device Package: 16-SO
Rise / Fall Time (Typ): 34ns, 34ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 300ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 15V ~ 30V
на замовлення 722 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+560.9 грн
10+ 391.65 грн
100+ 323.62 грн
FAN7631SJX fan7631-d.pdf
FAN7631SJX
Виробник: onsemi
Description: IC CTLR PFM RESON CONV 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 130°C
Voltage - Supply: 11.1V ~ 21V
Applications: Resonant Converter Controller
Supplier Device Package: 16-SOP
Part Status: Active
Current - Supply: 10 mA
DigiKey Programmable: Not Verified
товар відсутній
FDMC86160 fdmc86160-d.pdf
FDMC86160
Виробник: onsemi
Description: MOSFET N CH 100V 9A POWER33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 43A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 10V
Power Dissipation (Max): 2.3W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 50 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+70.83 грн
6000+ 65.64 грн
9000+ 63.47 грн
Мінімальне замовлення: 3000
FGH75T65UPD fgh75t65upd-d.pdf
FGH75T65UPD
Виробник: onsemi
Description: IGBT TRENCH FS 650V 150A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 85 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/166ns
Switching Energy: 2.85mJ (on), 1.2mJ (off)
Test Condition: 400V, 75A, 3Ohm, 15V
Gate Charge: 385 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 375 W
на замовлення 863 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+412.32 грн
30+ 316.75 грн
120+ 283.4 грн
510+ 234.67 грн
FGA20S125P fga20s125p-d.pdf
FGA20S125P
Виробник: onsemi
Description: IGBT 1250V 40A 250W TO-3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Gate Charge: 129 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1250 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 250 W
товар відсутній
FDMC86520DC fdmc86520dc-d.pdf
FDMC86520DC
Виробник: onsemi
Description: MOSFET N-CH 60V 17A/40A DLCOOL33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 17A, 10V
Power Dissipation (Max): 3W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: Dual Cool ™ 33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 30 V
на замовлення 14945 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+100.27 грн
6000+ 92.93 грн
Мінімальне замовлення: 3000
FCB20N60F-F085 fcb20n60f_f085-d.pdf
FCB20N60F-F085
Виробник: onsemi
Description: MOSFET N-CH 600V 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 20A, 10V
Power Dissipation (Max): 405W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2035 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
FDMC86520DC fdmc86520dc-d.pdf
FDMC86520DC
Виробник: onsemi
Description: MOSFET N-CH 60V 17A/40A DLCOOL33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 17A, 10V
Power Dissipation (Max): 3W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: Dual Cool ™ 33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 30 V
на замовлення 14945 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+199.76 грн
10+ 172.79 грн
100+ 141.57 грн
500+ 113.1 грн
1000+ 95.38 грн
Мінімальне замовлення: 2
FDMC86160 fdmc86160-d.pdf
FDMC86160
Виробник: onsemi
Description: MOSFET N CH 100V 9A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 43A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 10V
Power Dissipation (Max): 2.3W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 50 V
на замовлення 11377 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+157.11 грн
10+ 125.69 грн
100+ 100 грн
500+ 79.41 грн
1000+ 67.37 грн
Мінімальне замовлення: 2
FCD600N60Z fcd600n60z-d.pdf
FCD600N60Z
Виробник: onsemi
Description: MOSFET N-CH 600V 7.4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.7A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V
на замовлення 16437 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+126.54 грн
10+ 101.45 грн
100+ 80.76 грн
500+ 64.13 грн
1000+ 54.42 грн
Мінімальне замовлення: 3
FOD8318R2V fod8318-d.pdf
FOD8318R2V
Виробник: onsemi
Description: OPTOISO 4.243KV GATE DRIVER 16SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 4243Vrms
Approval Agency: IEC/EN/DIN, UL
Supplier Device Package: 16-SO
Rise / Fall Time (Typ): 34ns, 34ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 300ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 15V ~ 30V
товар відсутній
FOD8318R2V fod8318-d.pdf
FOD8318R2V
Виробник: onsemi
Description: OPTOISO 4.243KV GATE DRIVER 16SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 4243Vrms
Approval Agency: IEC/EN/DIN, UL
Supplier Device Package: 16-SO
Rise / Fall Time (Typ): 34ns, 34ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 300ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 15V ~ 30V
на замовлення 469 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+645.5 грн
10+ 450.86 грн
100+ 372.54 грн
FDPC8013S fdpc8013s-d.pdf
FDPC8013S
Виробник: onsemi
Description: MOSFET 2N-CH 30V 13A PWRCLIP-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW, 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 26A
Input Capacitance (Ciss) (Max) @ Vds: 827pF @ 15V
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Powerclip-33
Part Status: Active
на замовлення 3942 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+149.29 грн
10+ 119.25 грн
100+ 94.88 грн
500+ 75.34 грн
1000+ 63.93 грн
Мінімальне замовлення: 2
FDMQ86530L fdmq86530l-d.pdf
FDMQ86530L
Виробник: onsemi
Description: MOSFET 4N-CH 60V 8A 12MLP
Packaging: Cut Tape (CT)
Package / Case: 12-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 2295pF @ 30V
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 12-MLP (5x4.5)
на замовлення 2332 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+200.48 грн
10+ 161.9 грн
100+ 131 грн
500+ 109.28 грн
1000+ 93.57 грн
Мінімальне замовлення: 2
FCD380N60E fcd380n60e-d.pdf
FCD380N60E
Виробник: onsemi
Description: MOSFET N-CH 600V 10.2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
на замовлення 4899 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+153.56 грн
10+ 122.88 грн
100+ 97.81 грн
500+ 77.67 грн
1000+ 65.9 грн
Мінімальне замовлення: 2
FCB20N60F-F085 fcb20n60f_f085-d.pdf
FCB20N60F-F085
Виробник: onsemi
Description: MOSFET N-CH 600V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 20A, 10V
Power Dissipation (Max): 405W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2035 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
FDPC8013S fdpc8013s-d.pdf
FDPC8013S
Виробник: onsemi
Description: MOSFET 2N-CH 30V 13A PWRCLIP-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW, 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 26A
Input Capacitance (Ciss) (Max) @ Vds: 827pF @ 15V
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Powerclip-33
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+67.2 грн
Мінімальне замовлення: 3000
FCD600N60Z fcd600n60z-d.pdf
FCD600N60Z
Виробник: onsemi
Description: MOSFET N-CH 600V 7.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.7A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+57.2 грн
5000+ 53.01 грн
Мінімальне замовлення: 2500
FDMQ86530L fdmq86530l-d.pdf
FDMQ86530L
Виробник: onsemi
Description: MOSFET 4N-CH 60V 8A 12MLP
Packaging: Tape & Reel (TR)
Package / Case: 12-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 2295pF @ 30V
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 12-MLP (5x4.5)
на замовлення 860 шт:
термін постачання 21-31 дні (днів)
FCD380N60E fcd380n60e-d.pdf
FCD380N60E
Виробник: onsemi
Description: MOSFET N-CH 600V 10.2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+69.27 грн
Мінімальне замовлення: 2500
FDD770N15A fdd770n15a-d.pdf
FDD770N15A
Виробник: onsemi
Description: MOSFET N CH 150V 18A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 12A, 10V
Power Dissipation (Max): 56.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 75 V
товар відсутній
FDMF6821A fdmf6821a-d.pdf
FDMF6821A
Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 60A 40PQFN
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit, Status Flag
Package / Case: 40-PowerTFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 1Ohm LS, 1Ohm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 60A
Technology: DrMOS
Voltage - Load: 3V ~ 16V
Supplier Device Package: 40-PQFN (6x6)
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+191.75 грн
Мінімальне замовлення: 3000
FDB38N30U fdb38n30u-d.pdf
FDB38N30U
Виробник: onsemi
Description: MOSFET N CH 300V 38A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 19A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3340 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
800+125.43 грн
Мінімальне замовлення: 800
FCH041N60E ONSM-S-A0003584580-1.pdf?t.download=true&u=5oefqw
FCH041N60E
Виробник: onsemi
Description: MOSFET N-CH 600V 77A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 39A, 10V
Power Dissipation (Max): 592W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 100 V
на замовлення 125 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+830.34 грн
30+ 647.56 грн
120+ 609.47 грн
FDMA1430JP fdma1430jp-d.pdf
FDMA1430JP
Виробник: onsemi
Description: FET/BJT NPN/P CH 30V 2.9A MICROF
Packaging: Tape & Reel (TR)
Voltage - Rated: 30V
Package / Case: 6-VDFN Exposed Pad
Current Rating (Amps): 2.9A
Mounting Type: Surface Mount
Transistor Type: NPN, P-Channel
Applications: Load Switch
Supplier Device Package: 6-MicroFET (2x2)
товар відсутній
FGH50T65UPD fgh50t65upd-d.pdf
FGH50T65UPD
Виробник: onsemi
Description: IGBT TRENCH/FS 650V 100A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/160ns
Switching Energy: 2.7mJ (on), 740µJ (off)
Test Condition: 400V, 50A, 6Ohm, 15V
Gate Charge: 230 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 340 W
на замовлення 363 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+406.64 грн
30+ 312.12 грн
120+ 279.28 грн
FOD8318R2 fod8318-d.pdf
FOD8318R2
Виробник: onsemi
Description: OPTOISO 4.243KV 1CH GT DVR 16SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 4243Vrms
Approval Agency: UL
Supplier Device Package: 16-SO
Rise / Fall Time (Typ): 34ns, 34ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 300ns
Number of Channels: 1
Voltage - Output Supply: 15V ~ 30V
товар відсутній
FOD8318V fod8318-d.pdf
FOD8318V
Виробник: onsemi
Description: OPTOISO 4.243KV GATE DRIVER 16SO
товар відсутній
FDMS8320LDC fdms8320ldc-d.pdf
FDMS8320LDC
Виробник: onsemi
Description: MOSFET N-CH 40V 44A DLCOOL56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 44A, 10V
Power Dissipation (Max): 3.2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11635 pF @ 20 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+93.42 грн
Мінімальне замовлення: 3000
FOD8318 fod8318-d.pdf
FOD8318
Виробник: onsemi
Description: OPTOISO 4.243KV 1CH GT DVR 16SO
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 4243Vrms
Approval Agency: UL
Supplier Device Package: 16-SO
Rise / Fall Time (Typ): 34ns, 34ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 300ns
Number of Channels: 1
Voltage - Output Supply: 15V ~ 30V
на замовлення 2970 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+560.9 грн
10+ 391.65 грн
100+ 323.62 грн
500+ 265.99 грн
1000+ 251.48 грн
2000+ 245.68 грн
FGAF40N60SMD fgaf40n60smd-d.pdf
FGAF40N60SMD
Виробник: onsemi
Description: IGBT FIELD STOP 600V 80A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 36 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Supplier Device Package: TO-3PF
IGBT Type: Field Stop
Td (on/off) @ 25°C: 12ns/92ns
Switching Energy: 870µJ (on), 260µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 119 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 115 W
товар відсутній
FDD4N60NZ fdd4n60nz-d.pdf
FDD4N60NZ
Виробник: onsemi
Description: MOSFET N-CH 600V 3.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.7A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
товар відсутній
FOD8321R2V fod8321-d.pdf
FOD8321R2V
Виробник: onsemi
Description: OPTOISO 5KV 1CH GATE DRIVER 5SOP
товар відсутній
FOD8321R2 fod8321-d.pdf
FOD8321R2
Виробник: onsemi
Description: OPTOISO 5KV 1CH GATE DRIVER 5SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.346", 8.80mm Width), 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: UL
Supplier Device Package: 5-SOP
Rise / Fall Time (Typ): 60ns, 60ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 300ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 16V ~ 30V
товар відсутній
FDMC86248 fdmc86248-d.pdf
FDMC86248
Виробник: onsemi
Description: MOSFET N CH 150V 3.4A POWER33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.4A, 10V
Power Dissipation (Max): 2.3W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250mA
Supplier Device Package: Power33
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 75 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+57.66 грн
6000+ 53.43 грн
9000+ 51.67 грн
Мінімальне замовлення: 3000
FGH30S130P fgh30s130p-d.pdf
FGH30S130P
Виробник: onsemi
Description: IGBT 1300V 60A 500W TO-247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Gate Charge: 78 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1300 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 500 W
товар відсутній
FDMA8878 fdma8878-d.pdf
FDMA8878
Виробник: onsemi
Description: MOSFET N-CH 30V 9A/10A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 10A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V
товар відсутній
FGA25S125P fga25s125p-d.pdf
FGA25S125P
Виробник: onsemi
Description: IGBT 1250V 50A 250W TO-3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 25A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Gate Charge: 204 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1250 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 250 W
товар відсутній
FDMC7208S fdmc7208s-d.pdf
FDMC7208S
Виробник: onsemi
Description: MOSFET 2N-CH 30V 12A/16A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A, 16A
Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V
Rds On (Max) @ Id, Vgs: 9mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
на замовлення 2685 шт:
термін постачання 21-31 дні (днів)
FFH75H60S ffh75h60s-d.pdf
FFH75H60S
Виробник: onsemi
Description: DIODE GEN PURP 600V 75A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 75 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
на замовлення 1422 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+280.81 грн
10+ 227.35 грн
100+ 183.89 грн
500+ 153.4 грн
1000+ 131.35 грн
Мінімальне замовлення: 2
FDMC8327L fdmc8327l-d.pdf
FDMC8327L
Виробник: onsemi
Description: MOSFET N-CH 40V 12A/14A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 12A, 10V
Power Dissipation (Max): 2.3W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 20 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+31.18 грн
6000+ 28.59 грн
9000+ 27.27 грн
Мінімальне замовлення: 3000
FOD8321V fod8321-d.pdf
FOD8321V
Виробник: onsemi
Description: OPTOISO 5KV 1CH GATE DRIVER 5SOP
товар відсутній
FSA644UCX FAIR-S-A0001476110-1.pdf?t.download=true&u=5oefqw
FSA644UCX
Виробник: onsemi
Description: IC INTFACE SPECIALIZED 36WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 36-UFBGA, WLCSP
Mounting Type: Surface Mount
Voltage - Supply: 1.65V ~ 4.5V
Applications: Cell Phone
Supplier Device Package: 36-WLCSP (2.43x2.43)
Part Status: Obsolete
товар відсутній
FDMS8820 fdms8820-d.pdf
FDMS8820
Виробник: onsemi
Description: MOSFET N-CH 30V 28A/116A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 116A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 28A, 10V
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5315 pF @ 15 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+33.87 грн
6000+ 31.06 грн
9000+ 29.62 грн
Мінімальне замовлення: 3000
FGH40T65UPD fgh40t65upd-d.pdf
FGH40T65UPD
Виробник: onsemi
Description: IGBT TRENCH/FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 43 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/144ns
Switching Energy: 1.59mJ (on), 580µJ (off)
Test Condition: 400V, 40A, 7Ohm, 15V
Gate Charge: 177 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 268 W
товар відсутній
FXMHD103UMX FXMHD103_Rev_1.0.2.pdf
FXMHD103UMX
Виробник: onsemi
Description: IC INTERFACE SPECIALIZED 12UMLP
Packaging: Tape & Reel (TR)
Package / Case: 12-UFQFN
Mounting Type: Surface Mount
Voltage - Supply: 1.6V ~ 3.6V
Applications: Cell Phones, Digital Cameras, Media Players
Supplier Device Package: 12-UMLP (1.8x1.8)
товар відсутній
FXWA9306L8X fxwa9306-d.pdf
FXWA9306L8X
Виробник: onsemi
Description: IC TRANSLATOR BIDIR 8MICROPAK
Packaging: Tape & Reel (TR)
Features: Auto-Direction Sensing
Package / Case: 8-UFQFN
Output Type: Open Drain, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-MicroPak™
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1 V ~ 5.5 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
на замовлення 90000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+25.38 грн
10000+ 23.67 грн
25000+ 22.91 грн
Мінімальне замовлення: 5000
HUF76633P3-F085
HUF76633P3-F085
Виробник: onsemi
Description: MOSFET N-CH 100V 39A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 39A, 10V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V
товар відсутній
DFB2080 dfb2080-d.pdf
DFB2080
Виробник: onsemi
Description: BRIDGE RECT 1PHASE 800V 20A TS6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 1200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+181.99 грн
15+ 145.49 грн
105+ 115.8 грн
510+ 91.96 грн
1005+ 78.02 грн
Мінімальне замовлення: 2
DFB2040 dfb2080-d.pdf
DFB2040
Виробник: onsemi
Description: BRIDGE RECT 1P 400V 20A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 1200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+184.12 грн
10+ 146.98 грн
100+ 116.99 грн
500+ 92.9 грн
1200+ 78.83 грн
Мінімальне замовлення: 2
FXL6408UMX fxl6408-d.pdf
FXL6408UMX
Виробник: onsemi
Description: IC XPNDR 400KHZ I2C 16UMLP
Features: POR
Packaging: Tape & Reel (TR)
Package / Case: 16-UFQFN
Output Type: Open Drain
Mounting Type: Surface Mount
Interface: I²C
Number of I/O: 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 4V
Clock Frequency: 400 kHz
Interrupt Output: Yes
Supplier Device Package: 16-UMLP (1.8x2.6)
Current - Output Source/Sink: 6mA
Part Status: Active
DigiKey Programmable: Not Verified
товар відсутній
FSBB30CH60CT fsbb30ch60c-d.pdf
FSBB30CH60CT
Виробник: onsemi
Description: MODULE SPM 600V 30A SPMEC
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Part Status: Obsolete
Current: 30 A
Voltage: 600 V
товар відсутній
FSL137MRIN fsl137mrin-d.pdf
FSL137MRIN
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 67%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.5V ~ 26V
Supplier Device Package: 8-DIP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 12 V
Part Status: Active
Power (Watts): 30 W
на замовлення 28 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+120.14 грн
10+ 103.51 грн
25+ 97.62 грн
Мінімальне замовлення: 3
HUF76639S3ST-F085 huf76639s3s-d.pdf
HUF76639S3ST-F085
Виробник: onsemi
Description: MOSFET N CH 100V 51A TO-263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 51A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
товар відсутній
FDMS030N06B fdms030n06b-d.pdf
FDMS030N06B
Виробник: onsemi
Description: MOSFET N-CH 60V 22.1A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.1A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7560 pF @ 30 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+108.62 грн
Мінімальне замовлення: 3000
FDMS8090 fdms8090-d.pdf
FDMS8090
Виробник: onsemi
Description: MOSFET 2N-CH 100V 10A 8MLP PWR56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (5x6), Power56
товар відсутній
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