| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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FDMC8321LDC | onsemi |
Description: MOSFET N-CH 40V 27A DLCOOL33Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: Dual Cool ™ 33 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.9W (Ta), 56W (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 27A, 10V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 108A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 54231 шт: термін постачання 21-31 дні (днів) |
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FODM8801CR2V | onsemi |
Description: OPTOISO 3.75KV TRANS 4-MINI-FLATSupplier Device Package: 4-Mini-Flat Current Transfer Ratio (Max): 400% @ 1mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 200% @ 1mA Voltage - Isolation: 3750Vrms Current - Output / Channel: 30mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.35V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SOIC (0.173", 4.40mm Width) Packaging: Cut Tape (CT) Current - DC Forward (If) (Max): 20 mA Number of Channels: 1 Rise / Fall Time (Typ): 5µs, 5.5µs Turn On / Turn Off Time (Typ): 6µs, 6µs Voltage - Output (Max): 75V |
на замовлення 63300 шт: термін постачання 21-31 дні (днів) |
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FSL336LRLX | onsemi |
Description: IC OFFLINE SWITCH MULT TOP 7LSOPPower (Watts): 20 W Voltage - Start Up: 8 V Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage Supplier Device Package: 7-LSOP Voltage - Supply (Vcc/Vdd): 7V ~ 26V Topology: Buck, Flyback Output Isolation: Non-Isolated Voltage - Breakdown: 650V Internal Switch(s): Yes Frequency - Switching: 50kHz Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD (7 Leads), Gull Wing Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MCT623SD | onsemi |
Description: OPTOISOLATOR 5KV 2CH TRANS 8-SMDPackaging: Cut Tape (CT) Package / Case: 8-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.2V Input Type: DC Current - Output / Channel: 30mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 400mV Supplier Device Package: 8-SMD Voltage - Output (Max): 30V Turn On / Turn Off Time (Typ): 3µs, 3µs Part Status: Active Number of Channels: 2 Current - DC Forward (If) (Max): 60 mA |
на замовлення 1091 шт: термін постачання 21-31 дні (днів) |
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NB3W1900LMNG | onsemi |
Description: IC CLOCK ZDB FANOUT BUFFER 72QFNRatio - Input:Output: 1:19 Voltage - Supply: 3.135V ~ 3.465V Operating Temperature: 0°C ~ 70°C Input: HCSL Frequency - Max: 133MHz Output: HCSL Mounting Type: Surface Mount Package / Case: 72-VFQFN Exposed Pad Packaging: Tray DigiKey Programmable: Not Verified Number of Circuits: 1 Divider/Multiplier: No/No PLL: Yes with Bypass Supplier Device Package: 72-QFN (10x10) Differential - Input:Output: Yes/Yes |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STK541UC62K-E | onsemi |
Description: IGBT IPM 600V 10A 23-PWRSIP MODVoltage: 600 V Current: 10 A Voltage - Isolation: 2000Vrms Configuration: 3 Phase Type: IGBT Mounting Type: Through Hole Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads Packaging: Tube |
на замовлення 132 шт: термін постачання 21-31 дні (днів) |
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STK5Q4U362J-E | onsemi |
Description: IC HALF BRIDGE DRIVER 10ACurrent - Peak Output: 20A Current - Output / Channel: 10A Applications: AC Motors Voltage - Supply: 12.5V ~ 17.5V Output Configuration: Half Bridge (3) Operating Temperature: 150°C (TJ) Interface: Logic Mounting Type: Through Hole Package / Case: 38-DIP Module, 24 Leads Features: Status Flag Packaging: Tube Load Type: Inductive Fault Protection: Current Limiting, UVLO Voltage - Load: 400V (Max) Technology: IGBT |
товару немає в наявності |
Мінімальне замовлення: 16 шт В кошику од. на суму грн. | ||||||||||||||
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ESD8011MUT5G | onsemi |
Description: TVS DIODE 5.5VWM 19VC 2X3DFNPart Status: Active Power Line Protection: No Power - Peak Pulse: 34W Voltage - Clamping (Max) @ Ipp: 19V Voltage - Breakdown (Min): 6.5V Bidirectional Channels: 1 Supplier Device Package: 2-X3DFN (0.6x0.3) (0201) Voltage - Reverse Standoff (Typ): 5.5V (Max) Current - Peak Pulse (10/1000µs): 3.6A (8/20µs) Capacitance @ Frequency: 0.1pF @ 1MHz Applications: General Purpose Operating Temperature: -55°C ~ 125°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: 0201 (0603 Metric) Packaging: Tape & Reel (TR) |
на замовлення 260000 шт: термін постачання 21-31 дні (днів) |
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NCL30030B1DR2G | onsemi |
Description: IC LED DRIVER OFFL 500MA 16SOICVoltage - Supply (Max): 30V Voltage - Supply (Min): 9V Supplier Device Package: 16-SOIC Topology: Flyback Internal Switch(s): No Applications: Lighting, Signage Operating Temperature: -40°C ~ 125°C (TJ) Type: AC DC Offline Switcher Number of Outputs: 1 Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width), 15 Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TF412ST5G | onsemi |
Description: JFET N-CH 30V 10MA SOT883Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V Voltage - Breakdown (V(BR)GSS): 30 V Current Drain (Id) - Max: 10 mA Supplier Device Package: SOT-883 (XDFN3) (1x0.6) Part Status: Active Drain to Source Voltage (Vdss): 30 V Power - Max: 100 mW Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V |
на замовлення 184000 шт: термін постачання 21-31 дні (днів) |
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NCP170AMX300TCG | onsemi |
Description: IC REG LINEAR 3V 150MA 4-XDFNPackaging: Tape & Reel (TR) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 900 nA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-XDFN (1x1) Voltage - Output (Min/Fixed): 3V Control Features: Enable PSRR: 47dB (1kHz) Voltage Dropout (Max): 0.26V @ 150mA Protection Features: Over Current, Over Temperature |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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NCV8152MX330180TCG | onsemi |
Description: IC REG LINEAR 1.8V/3.3V 6-XDFNQualification: AEC-Q100 Grade: Automotive Current - Supply (Max): 200 µA Protection Features: Over Current, Over Temperature Voltage Dropout (Max): 0.42V @ 150mA, 0.24V @ 150mA PSRR: 75dB (1kHz) Part Status: Active Control Features: Enable Voltage - Output (Min/Fixed): 1.8V, 3.3V Supplier Device Package: 6-XDFN (1.2x1.2) Number of Regulators: 2 Voltage - Input (Max): 5.25V Current - Quiescent (Iq): 100 µA Output Configuration: Positive Operating Temperature: -40°C ~ 125°C (TJ) Current - Output: 150mA, 150mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 6-XFDFN Exposed Pad Packaging: Tape & Reel (TR) |
на замовлення 765000 шт: термін постачання 21-31 дні (днів) |
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NRVTS245ESFT1G | onsemi |
Description: DIODE SCHOTTKY 45V 2A SOD123FL |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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NTMFS4C05NT1G | onsemi |
Description: MOSFET N-CH 30V 11.9A 5DFNInput Capacitance (Ciss) (Max) @ Vds: 1972 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 770mW (Ta), 33W (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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NTMFS4C10NT1G | onsemi |
Description: MOSFET N-CH 30V 8.2A 5DFNGate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 750mW (Ta), 23.6W (Tc) Rds On (Max) @ Id, Vgs: 6.95mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 15 V |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||
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NTS245SFT1G | onsemi |
Description: DIODE SCHOTTKY 45V 2A SOD123FLPackaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123FL Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A Current - Reverse Leakage @ Vr: 120 µA @ 45 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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NTS260SFT1G | onsemi |
Description: DIODE SCHOTTKY 60V 2A SOD123FLQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 50 µA @ 45 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 60 V Grade: Automotive Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: SOD-123FL Current - Average Rectified (Io): 2A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123F Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NVE4153NT1G | onsemi |
Description: MOSFET N-CH 20V 915MA SC89Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 16 V Gate Charge (Qg) (Max) @ Vgs: 1.82 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±6V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: SC-89-3 Vgs(th) (Max) @ Id: 1.1V @ 250µA Power Dissipation (Max): 300mW (Tj) Rds On (Max) @ Id, Vgs: 230mOhm @ 600mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 915mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 51000 шт: термін постачання 21-31 дні (днів) |
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ESD8011MUT5G | onsemi |
Description: TVS DIODE 5.5VWM 19VC 2X3DFNPart Status: Active Power Line Protection: No Power - Peak Pulse: 34W Voltage - Clamping (Max) @ Ipp: 19V Voltage - Breakdown (Min): 6.5V Bidirectional Channels: 1 Supplier Device Package: 2-X3DFN (0.6x0.3) (0201) Voltage - Reverse Standoff (Typ): 5.5V (Max) Current - Peak Pulse (10/1000µs): 3.6A (8/20µs) Capacitance @ Frequency: 0.1pF @ 1MHz Applications: General Purpose Operating Temperature: -55°C ~ 125°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: 0201 (0603 Metric) Packaging: Cut Tape (CT) |
на замовлення 265614 шт: термін постачання 21-31 дні (днів) |
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NCL30030B1DR2G | onsemi |
Description: IC LED DRIVER OFFL 500MA 16SOICVoltage - Supply (Max): 30V Voltage - Supply (Min): 9V Supplier Device Package: 16-SOIC Topology: Flyback Internal Switch(s): No Applications: Lighting, Signage Operating Temperature: -40°C ~ 125°C (TJ) Type: AC DC Offline Switcher Number of Outputs: 1 Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width), 15 Leads Packaging: Cut Tape (CT) |
на замовлення 2470 шт: термін постачання 21-31 дні (днів) |
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TF412ST5G | onsemi |
Description: JFET N-CH 30V 10MA SOT883Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V Voltage - Breakdown (V(BR)GSS): 30 V Current Drain (Id) - Max: 10 mA Supplier Device Package: SOT-883 (XDFN3) (1x0.6) Part Status: Active Drain to Source Voltage (Vdss): 30 V Power - Max: 100 mW Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V |
на замовлення 184680 шт: термін постачання 21-31 дні (днів) |
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NCP170AMX300TCG | onsemi |
Description: IC REG LINEAR 3V 150MA 4-XDFNPackaging: Cut Tape (CT) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 900 nA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-XDFN (1x1) Voltage - Output (Min/Fixed): 3V Control Features: Enable PSRR: 47dB (1kHz) Voltage Dropout (Max): 0.26V @ 150mA Protection Features: Over Current, Over Temperature |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NRVTS245ESFT1G | onsemi |
Description: DIODE SCHOTTKY 45V 2A SOD123FL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NTMFS4C05NT1G | onsemi |
Description: MOSFET N-CH 30V 11.9A 5DFNInput Capacitance (Ciss) (Max) @ Vds: 1972 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 770mW (Ta), 33W (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) |
на замовлення 8286 шт: термін постачання 21-31 дні (днів) |
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NTMFS4C10NT1G | onsemi |
Description: MOSFET N-CH 30V 8.2A 5DFNInput Capacitance (Ciss) (Max) @ Vds: 987 pF @ 15 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 750mW (Ta), 23.6W (Tc) Rds On (Max) @ Id, Vgs: 6.95mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V |
на замовлення 1137 шт: термін постачання 21-31 дні (днів) |
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NTS245SFT1G | onsemi |
Description: DIODE SCHOTTKY 45V 2A SOD123FLPackaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123FL Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A Current - Reverse Leakage @ Vr: 120 µA @ 45 V |
на замовлення 5362 шт: термін постачання 21-31 дні (днів) |
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NVE4153NT1G | onsemi |
Description: MOSFET N-CH 20V 915MA SC89Mounting Type: Surface Mount Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 16 V Gate Charge (Qg) (Max) @ Vgs: 1.82 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±6V Package / Case: SC-89, SOT-490 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: SC-89-3 Vgs(th) (Max) @ Id: 1.1V @ 250µA Power Dissipation (Max): 300mW (Tj) Rds On (Max) @ Id, Vgs: 230mOhm @ 600mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 915mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
на замовлення 54376 шт: термін постачання 21-31 дні (днів) |
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NTMFS4C06NT1G | onsemi |
Description: MOSFET N-CH 30V 11A/69A 5DFNInput Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 770mW (Ta), 30.5W (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 69A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) |
на замовлення 1875 шт: термін постачання 21-31 дні (днів) |
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NTMFS4C09NT1G | onsemi |
Description: MOSFET N-CH 30V 9A 5DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 30A, 10V Power Dissipation (Max): 760mW (Ta), 25.5W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1252 pF @ 15 V |
на замовлення 5310 шт: термін постачання 21-31 дні (днів) |
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FGA6560WDF | onsemi |
Description: IGBT TRENCH FS 650V 120A TO-3PNCurrent - Collector Pulsed (Icm): 180 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 120 A Gate Charge: 84 nC Test Condition: 400V, 60A, 6Ohm, 15V Switching Energy: 2.46mJ (on), 520µJ (off) Td (on/off) @ 25°C: 25.6ns/71ns IGBT Type: Trench Field Stop Supplier Device Package: TO-3PN Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A Reverse Recovery Time (trr): 110 ns Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Power - Max: 306 W Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDMC86160ET100 | onsemi |
Description: MOSFET N-CH 100V 9A/43A POWER33Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: Power33 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.8W (Ta), 65W (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 10V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 43A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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FDMC86260ET150 | onsemi |
Description: MOSFET N-CH 150V 5.4A/25A PWR33FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: Power33 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.8W (Ta), 65W (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 25A (Tc) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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FDMC86340ET80 | onsemi |
Description: MOSFET N-CH 80V 14A/68A POWER33Supplier Device Package: Power33 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.8W (Ta), 65W (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2775 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Part Status: Active |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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FDMC86570LET60 | onsemi |
Description: MOSFET N-CH 60V 18A/87A POWER33Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: Power33 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.8W (Ta), 65W (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 87A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FDMS86150ET100 | onsemi |
Description: MOSFET N-CH 100V 16A POWER56Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 128A (Tc) Rds On (Max) @ Id, Vgs: 4.85mOhm @ 16A, 10V Power Dissipation (Max): 3.3W (Ta), 187W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4065 pF @ 50 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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FDMS86255ET150 | onsemi |
Description: MOSFET N-CH 150V 10A/63A POWER56Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.3W (Ta), 136W (Tc) Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 63A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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FDMS86350ET80 | onsemi |
Description: MOSFET N-CH 80V 25A/198A POWER56Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Part Status: Active Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 3.3W (Ta), 187W (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 198A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 8030 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FDMS86550ET60 | onsemi |
Description: MOSFET N-CH 60V 32A/245A POWER56Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 245A (Tc) Rds On (Max) @ Id, Vgs: 1.65mOhm @ 32A, 10V Power Dissipation (Max): 3.3W (Ta), 187W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8235 pF @ 30 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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FDMS86202ET120 | onsemi |
Description: MOSFET N-CH 120V 13.5/102A PWR56Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.3W (Ta), 187W (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 13.5A, 10V Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 102A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 4585 pF @ 60 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Drain to Source Voltage (Vdss): 120 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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FDMC86160ET100 | onsemi |
Description: MOSFET N-CH 100V 9A/43A POWER33Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 43A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: Power33 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.8W (Ta), 65W (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 10V |
на замовлення 27583 шт: термін постачання 21-31 дні (днів) |
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FDMC86260ET150 | onsemi |
Description: MOSFET N-CH 150V 5.4A/25A PWR33Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: Power33 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.8W (Ta), 65W (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 25A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
на замовлення 6265 шт: термін постачання 21-31 дні (днів) |
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FDMC86340ET80 | onsemi |
Description: MOSFET N-CH 80V 14A/68A POWER33Input Capacitance (Ciss) (Max) @ Vds: 2775 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Part Status: Active Supplier Device Package: Power33 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.8W (Ta), 65W (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
на замовлення 12030 шт: термін постачання 21-31 дні (днів) |
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FDMC86570LET60 | onsemi |
Description: MOSFET N-CH 60V 18A/87A POWER33Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: Power33 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.8W (Ta), 65W (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 87A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
на замовлення 3156 шт: термін постачання 21-31 дні (днів) |
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FDMS86150ET100 | onsemi |
Description: MOSFET N-CH 100V 16A POWER56Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 128A (Tc) Rds On (Max) @ Id, Vgs: 4.85mOhm @ 16A, 10V Power Dissipation (Max): 3.3W (Ta), 187W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4065 pF @ 50 V |
на замовлення 1317 шт: термін постачання 21-31 дні (днів) |
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FDMS86255ET150 | onsemi |
Description: MOSFET N-CH 150V 10A/63A POWER56Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.3W (Ta), 136W (Tc) Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 63A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 257 шт: термін постачання 21-31 дні (днів) |
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FDMS86350ET80 | onsemi |
Description: MOSFET N-CH 80V 25A/198A POWER56Input Capacitance (Ciss) (Max) @ Vds: 8030 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Part Status: Active Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 3.3W (Ta), 187W (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 198A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 4555 шт: термін постачання 21-31 дні (днів) |
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FDMS86550ET60 | onsemi |
Description: MOSFET N-CH 60V 32A/245A POWER56Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 245A (Tc) Rds On (Max) @ Id, Vgs: 1.65mOhm @ 32A, 10V Power Dissipation (Max): 3.3W (Ta), 187W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8235 pF @ 30 V |
на замовлення 2275 шт: термін постачання 21-31 дні (днів) |
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FDMS86202ET120 | onsemi |
Description: MOSFET N-CH 120V 13.5/102A PWR56Input Capacitance (Ciss) (Max) @ Vds: 4585 pF @ 60 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Drain to Source Voltage (Vdss): 120 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.3W (Ta), 187W (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 13.5A, 10V Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 102A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 8545 шт: термін постачання 21-31 дні (днів) |
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FDBL0065N40 | onsemi |
Description: MOSFET N-CH 40V 300A 8HPSOFInput Capacitance (Ciss) (Max) @ Vds: 15900 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 296 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 8-HPSOF Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 429W (Tj) Rds On (Max) @ Id, Vgs: 0.65mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Tape & Reel (TR) |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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FDBL0090N40 | onsemi |
Description: MOSFET N-CH 40V 240A 8HPSOFInput Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 8-HPSOF Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 357W (Tj) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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FDBL0630N150 | onsemi |
Description: MOSFET N-CH 150V 169A 8HPSOFInput Capacitance (Ciss) (Max) @ Vds: 5805 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 8-HPSOF Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 500W (Tj) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 169A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
| FSA551UCX | onsemi |
Description: IC AUDIO SWITCH DUAL SPST 9WLCSPNumber of Channels: 2 Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST Voltage - Supply, Single (V+): 1.5V ~ 3V Supplier Device Package: 9-WLCSP (1.22x1.22) -3db Bandwidth: 240MHz On-State Resistance (Max): 600mOhm Applications: Audio Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 9-UFBGA, WLCSP Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FDBL0065N40 | onsemi |
Description: MOSFET N-CH 40V 300A 8HPSOFInput Capacitance (Ciss) (Max) @ Vds: 15900 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 296 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 8-HPSOF Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 429W (Tj) Rds On (Max) @ Id, Vgs: 0.65mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Cut Tape (CT) |
на замовлення 2993 шт: термін постачання 21-31 дні (днів) |
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FDBL0090N40 | onsemi |
Description: MOSFET N-CH 40V 240A 8HPSOFInput Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 8-HPSOF Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 357W (Tj) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Cut Tape (CT) |
на замовлення 60 шт: термін постачання 21-31 дні (днів) |
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FDBL0630N150 | onsemi |
Description: MOSFET N-CH 150V 169A 8HPSOFPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 169A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 80A, 10V Power Dissipation (Max): 500W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5805 pF @ 75 V |
на замовлення 769 шт: термін постачання 21-31 дні (днів) |
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| FSA551UCX | onsemi |
Description: IC AUDIO SWITCH DUAL SPST 9WLCSPNumber of Channels: 2 Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST Voltage - Supply, Single (V+): 1.5V ~ 3V Supplier Device Package: 9-WLCSP (1.22x1.22) -3db Bandwidth: 240MHz On-State Resistance (Max): 600mOhm Applications: Audio Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 9-UFBGA, WLCSP Packaging: Cut Tape (CT) |
на замовлення 681 шт: термін постачання 21-31 дні (днів) |
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NCS333SN2T1G | onsemi |
Description: IC OPAMP ZERO-DRIFT 1 CIRC 5TSOPVoltage - Supply Span (Max): 5.5 V Voltage - Supply Span (Min): 1.8 V Current - Output / Channel: 25 mA Number of Circuits: 1 Part Status: Obsolete Supplier Device Package: 5-TSOP Voltage - Input Offset: 10 µV Current - Input Bias: 60 pA Gain Bandwidth Product: 350 kHz Slew Rate: 0.1V/µs Current - Supply: 17µA Operating Temperature: -40°C ~ 105°C Amplifier Type: Zero-Drift Mounting Type: Surface Mount Output Type: Rail-to-Rail Package / Case: SOT-23-5 Thin, TSOT-23-5 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCS333SQ3T2G | onsemi |
Description: IC OPAMP ZERO-DRIFT 1 CIRC SC88AGain Bandwidth Product: 350 kHz Slew Rate: 0.1V/µs Current - Supply: 17µA Operating Temperature: -40°C ~ 105°C Amplifier Type: Zero-Drift Mounting Type: Surface Mount Output Type: Rail-to-Rail Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Tape & Reel (TR) Voltage - Supply Span (Max): 5.5 V Voltage - Supply Span (Min): 1.8 V Current - Output / Channel: 25 mA Number of Circuits: 1 Part Status: Obsolete Supplier Device Package: SC-88A (SC-70-5/SOT-353) Voltage - Input Offset: 10 µV Current - Input Bias: 60 pA |
товару немає в наявності |
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|
FDMA6676PZ | onsemi |
Description: MOSFET P-CH 30V 11A 6MICROFETPackaging: Cut Tape (CT) Package / Case: 6-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 10V Power Dissipation (Max): 2.4W (Ta) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: 6-MicroFET (2x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 15 V |
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|
FGH40T65SHD-F155 | onsemi |
Description: IGBT TRENCH FS 650V 80A TO-247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 31.8 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 19.2ns/65.6ns Switching Energy: 1.01mJ (on), 297µJ (off) Test Condition: 400V, 40A, 6Ohm, 15V Gate Charge: 72.2 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 268 W |
на замовлення 1800 шт: термін постачання 21-31 дні (днів) |
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| FDMC8321LDC |
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Виробник: onsemi
Description: MOSFET N-CH 40V 27A DLCOOL33
Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: Dual Cool ™ 33
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.9W (Ta), 56W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 108A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 27A DLCOOL33
Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: Dual Cool ™ 33
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.9W (Ta), 56W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 108A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 54231 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 143.36 грн |
| 10+ | 104.54 грн |
| 100+ | 84.90 грн |
| 500+ | 72.68 грн |
| 1000+ | 66.54 грн |
| FODM8801CR2V |
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Виробник: onsemi
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Supplier Device Package: 4-Mini-Flat
Current Transfer Ratio (Max): 400% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 200% @ 1mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 30mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Rise / Fall Time (Typ): 5µs, 5.5µs
Turn On / Turn Off Time (Typ): 6µs, 6µs
Voltage - Output (Max): 75V
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Supplier Device Package: 4-Mini-Flat
Current Transfer Ratio (Max): 400% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 200% @ 1mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 30mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Rise / Fall Time (Typ): 5µs, 5.5µs
Turn On / Turn Off Time (Typ): 6µs, 6µs
Voltage - Output (Max): 75V
на замовлення 63300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 139.48 грн |
| 10+ | 95.96 грн |
| 100+ | 73.35 грн |
| 500+ | 59.47 грн |
| 1000+ | 56.41 грн |
| FSL336LRLX |
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Виробник: onsemi
Description: IC OFFLINE SWITCH MULT TOP 7LSOP
Power (Watts): 20 W
Voltage - Start Up: 8 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Supplier Device Package: 7-LSOP
Voltage - Supply (Vcc/Vdd): 7V ~ 26V
Topology: Buck, Flyback
Output Isolation: Non-Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 50kHz
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD (7 Leads), Gull Wing
Packaging: Cut Tape (CT)
Description: IC OFFLINE SWITCH MULT TOP 7LSOP
Power (Watts): 20 W
Voltage - Start Up: 8 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Supplier Device Package: 7-LSOP
Voltage - Supply (Vcc/Vdd): 7V ~ 26V
Topology: Buck, Flyback
Output Isolation: Non-Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 50kHz
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD (7 Leads), Gull Wing
Packaging: Cut Tape (CT)
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| MCT623SD |
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Виробник: onsemi
Description: OPTOISOLATOR 5KV 2CH TRANS 8-SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 30mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Supplier Device Package: 8-SMD
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLATOR 5KV 2CH TRANS 8-SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 30mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Supplier Device Package: 8-SMD
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 60 mA
на замовлення 1091 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 105.39 грн |
| 10+ | 71.93 грн |
| 100+ | 54.14 грн |
| 500+ | 43.44 грн |
| NB3W1900LMNG |
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Виробник: onsemi
Description: IC CLOCK ZDB FANOUT BUFFER 72QFN
Ratio - Input:Output: 1:19
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: 0°C ~ 70°C
Input: HCSL
Frequency - Max: 133MHz
Output: HCSL
Mounting Type: Surface Mount
Package / Case: 72-VFQFN Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
Number of Circuits: 1
Divider/Multiplier: No/No
PLL: Yes with Bypass
Supplier Device Package: 72-QFN (10x10)
Differential - Input:Output: Yes/Yes
Description: IC CLOCK ZDB FANOUT BUFFER 72QFN
Ratio - Input:Output: 1:19
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: 0°C ~ 70°C
Input: HCSL
Frequency - Max: 133MHz
Output: HCSL
Mounting Type: Surface Mount
Package / Case: 72-VFQFN Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
Number of Circuits: 1
Divider/Multiplier: No/No
PLL: Yes with Bypass
Supplier Device Package: 72-QFN (10x10)
Differential - Input:Output: Yes/Yes
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| STK541UC62K-E |
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Виробник: onsemi
Description: IGBT IPM 600V 10A 23-PWRSIP MOD
Voltage: 600 V
Current: 10 A
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase
Type: IGBT
Mounting Type: Through Hole
Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads
Packaging: Tube
Description: IGBT IPM 600V 10A 23-PWRSIP MOD
Voltage: 600 V
Current: 10 A
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase
Type: IGBT
Mounting Type: Through Hole
Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads
Packaging: Tube
на замовлення 132 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1566.86 грн |
| 16+ | 1030.98 грн |
| 104+ | 890.02 грн |
| STK5Q4U362J-E |
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Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 10A
Current - Peak Output: 20A
Current - Output / Channel: 10A
Applications: AC Motors
Voltage - Supply: 12.5V ~ 17.5V
Output Configuration: Half Bridge (3)
Operating Temperature: 150°C (TJ)
Interface: Logic
Mounting Type: Through Hole
Package / Case: 38-DIP Module, 24 Leads
Features: Status Flag
Packaging: Tube
Load Type: Inductive
Fault Protection: Current Limiting, UVLO
Voltage - Load: 400V (Max)
Technology: IGBT
Description: IC HALF BRIDGE DRIVER 10A
Current - Peak Output: 20A
Current - Output / Channel: 10A
Applications: AC Motors
Voltage - Supply: 12.5V ~ 17.5V
Output Configuration: Half Bridge (3)
Operating Temperature: 150°C (TJ)
Interface: Logic
Mounting Type: Through Hole
Package / Case: 38-DIP Module, 24 Leads
Features: Status Flag
Packaging: Tube
Load Type: Inductive
Fault Protection: Current Limiting, UVLO
Voltage - Load: 400V (Max)
Technology: IGBT
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Мінімальне замовлення: 16 шт
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| ESD8011MUT5G |
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Виробник: onsemi
Description: TVS DIODE 5.5VWM 19VC 2X3DFN
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 34W
Voltage - Clamping (Max) @ Ipp: 19V
Voltage - Breakdown (Min): 6.5V
Bidirectional Channels: 1
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Current - Peak Pulse (10/1000µs): 3.6A (8/20µs)
Capacitance @ Frequency: 0.1pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Tape & Reel (TR)
Description: TVS DIODE 5.5VWM 19VC 2X3DFN
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 34W
Voltage - Clamping (Max) @ Ipp: 19V
Voltage - Breakdown (Min): 6.5V
Bidirectional Channels: 1
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Current - Peak Pulse (10/1000µs): 3.6A (8/20µs)
Capacitance @ Frequency: 0.1pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Tape & Reel (TR)
на замовлення 260000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 6.19 грн |
| 20000+ | 5.48 грн |
| NCL30030B1DR2G |
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Виробник: onsemi
Description: IC LED DRIVER OFFL 500MA 16SOIC
Voltage - Supply (Max): 30V
Voltage - Supply (Min): 9V
Supplier Device Package: 16-SOIC
Topology: Flyback
Internal Switch(s): No
Applications: Lighting, Signage
Operating Temperature: -40°C ~ 125°C (TJ)
Type: AC DC Offline Switcher
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width), 15 Leads
Packaging: Tape & Reel (TR)
Description: IC LED DRIVER OFFL 500MA 16SOIC
Voltage - Supply (Max): 30V
Voltage - Supply (Min): 9V
Supplier Device Package: 16-SOIC
Topology: Flyback
Internal Switch(s): No
Applications: Lighting, Signage
Operating Temperature: -40°C ~ 125°C (TJ)
Type: AC DC Offline Switcher
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width), 15 Leads
Packaging: Tape & Reel (TR)
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| TF412ST5G |
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Виробник: onsemi
Description: JFET N-CH 30V 10MA SOT883
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
Voltage - Breakdown (V(BR)GSS): 30 V
Current Drain (Id) - Max: 10 mA
Supplier Device Package: SOT-883 (XDFN3) (1x0.6)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
Description: JFET N-CH 30V 10MA SOT883
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
Voltage - Breakdown (V(BR)GSS): 30 V
Current Drain (Id) - Max: 10 mA
Supplier Device Package: SOT-883 (XDFN3) (1x0.6)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
на замовлення 184000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8000+ | 6.75 грн |
| 16000+ | 5.97 грн |
| NCP170AMX300TCG |
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Виробник: onsemi
Description: IC REG LINEAR 3V 150MA 4-XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 900 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
PSRR: 47dB (1kHz)
Voltage Dropout (Max): 0.26V @ 150mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 3V 150MA 4-XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 900 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
PSRR: 47dB (1kHz)
Voltage Dropout (Max): 0.26V @ 150mA
Protection Features: Over Current, Over Temperature
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Мінімальне замовлення: 5000 шт
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| NCV8152MX330180TCG |
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Виробник: onsemi
Description: IC REG LINEAR 1.8V/3.3V 6-XDFN
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 200 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.42V @ 150mA, 0.24V @ 150mA
PSRR: 75dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V, 3.3V
Supplier Device Package: 6-XDFN (1.2x1.2)
Number of Regulators: 2
Voltage - Input (Max): 5.25V
Current - Quiescent (Iq): 100 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 150mA, 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-XFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC REG LINEAR 1.8V/3.3V 6-XDFN
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 200 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.42V @ 150mA, 0.24V @ 150mA
PSRR: 75dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V, 3.3V
Supplier Device Package: 6-XDFN (1.2x1.2)
Number of Regulators: 2
Voltage - Input (Max): 5.25V
Current - Quiescent (Iq): 100 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 150mA, 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-XFDFN Exposed Pad
Packaging: Tape & Reel (TR)
на замовлення 765000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 6.48 грн |
| 10000+ | 6.07 грн |
| 15000+ | 5.98 грн |
| 25000+ | 5.53 грн |
| 35000+ | 5.47 грн |
| 50000+ | 5.42 грн |
| NRVTS245ESFT1G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 45V 2A SOD123FL
Description: DIODE SCHOTTKY 45V 2A SOD123FL
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| NTMFS4C05NT1G |
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Виробник: onsemi
Description: MOSFET N-CH 30V 11.9A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 1972 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 770mW (Ta), 33W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 11.9A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 1972 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 770mW (Ta), 33W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 19.55 грн |
| 3000+ | 11.95 грн |
| 4500+ | 11.35 грн |
| 7500+ | 10.22 грн |
| NTMFS4C10NT1G |
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Виробник: onsemi
Description: MOSFET N-CH 30V 8.2A 5DFN
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 750mW (Ta), 23.6W (Tc)
Rds On (Max) @ Id, Vgs: 6.95mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 15 V
Description: MOSFET N-CH 30V 8.2A 5DFN
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 750mW (Ta), 23.6W (Tc)
Rds On (Max) @ Id, Vgs: 6.95mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
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| NTS245SFT1G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 45V 2A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Current - Reverse Leakage @ Vr: 120 µA @ 45 V
Description: DIODE SCHOTTKY 45V 2A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Current - Reverse Leakage @ Vr: 120 µA @ 45 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NTS260SFT1G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 60V 2A SOD123FL
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SOD-123FL
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 60V 2A SOD123FL
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SOD-123FL
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
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В кошику
од. на суму грн.
| NVE4153NT1G |
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Виробник: onsemi
Description: MOSFET N-CH 20V 915MA SC89
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 1.82 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±6V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 300mW (Tj)
Rds On (Max) @ Id, Vgs: 230mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 915mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 20V 915MA SC89
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 1.82 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±6V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 300mW (Tj)
Rds On (Max) @ Id, Vgs: 230mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 915mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 51000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 12.05 грн |
| 6000+ | 10.64 грн |
| 9000+ | 10.14 грн |
| 15000+ | 9.00 грн |
| 21000+ | 8.69 грн |
| 30000+ | 8.39 грн |
| ESD8011MUT5G |
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Виробник: onsemi
Description: TVS DIODE 5.5VWM 19VC 2X3DFN
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 34W
Voltage - Clamping (Max) @ Ipp: 19V
Voltage - Breakdown (Min): 6.5V
Bidirectional Channels: 1
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Current - Peak Pulse (10/1000µs): 3.6A (8/20µs)
Capacitance @ Frequency: 0.1pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
Description: TVS DIODE 5.5VWM 19VC 2X3DFN
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 34W
Voltage - Clamping (Max) @ Ipp: 19V
Voltage - Breakdown (Min): 6.5V
Bidirectional Channels: 1
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Current - Peak Pulse (10/1000µs): 3.6A (8/20µs)
Capacitance @ Frequency: 0.1pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
на замовлення 265614 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.65 грн |
| 15+ | 21.04 грн |
| 100+ | 13.35 грн |
| 500+ | 9.40 грн |
| 1000+ | 8.38 грн |
| 2000+ | 7.53 грн |
| 5000+ | 6.50 грн |
| NCL30030B1DR2G |
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Виробник: onsemi
Description: IC LED DRIVER OFFL 500MA 16SOIC
Voltage - Supply (Max): 30V
Voltage - Supply (Min): 9V
Supplier Device Package: 16-SOIC
Topology: Flyback
Internal Switch(s): No
Applications: Lighting, Signage
Operating Temperature: -40°C ~ 125°C (TJ)
Type: AC DC Offline Switcher
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width), 15 Leads
Packaging: Cut Tape (CT)
Description: IC LED DRIVER OFFL 500MA 16SOIC
Voltage - Supply (Max): 30V
Voltage - Supply (Min): 9V
Supplier Device Package: 16-SOIC
Topology: Flyback
Internal Switch(s): No
Applications: Lighting, Signage
Operating Temperature: -40°C ~ 125°C (TJ)
Type: AC DC Offline Switcher
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width), 15 Leads
Packaging: Cut Tape (CT)
на замовлення 2470 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 230.92 грн |
| 10+ | 141.18 грн |
| 25+ | 119.99 грн |
| 100+ | 90.14 грн |
| 250+ | 79.10 грн |
| 500+ | 72.31 грн |
| 1000+ | 65.54 грн |
| TF412ST5G |
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Виробник: onsemi
Description: JFET N-CH 30V 10MA SOT883
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
Voltage - Breakdown (V(BR)GSS): 30 V
Current Drain (Id) - Max: 10 mA
Supplier Device Package: SOT-883 (XDFN3) (1x0.6)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
Description: JFET N-CH 30V 10MA SOT883
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
Voltage - Breakdown (V(BR)GSS): 30 V
Current Drain (Id) - Max: 10 mA
Supplier Device Package: SOT-883 (XDFN3) (1x0.6)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
на замовлення 184680 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 37.20 грн |
| 14+ | 22.01 грн |
| 100+ | 13.98 грн |
| 500+ | 9.85 грн |
| 1000+ | 8.80 грн |
| 2000+ | 7.91 грн |
| NCP170AMX300TCG |
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Виробник: onsemi
Description: IC REG LINEAR 3V 150MA 4-XDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 900 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
PSRR: 47dB (1kHz)
Voltage Dropout (Max): 0.26V @ 150mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 3V 150MA 4-XDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 900 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
PSRR: 47dB (1kHz)
Voltage Dropout (Max): 0.26V @ 150mA
Protection Features: Over Current, Over Temperature
товару немає в наявності
В кошику
од. на суму грн.
| NRVTS245ESFT1G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 45V 2A SOD123FL
Description: DIODE SCHOTTKY 45V 2A SOD123FL
товару немає в наявності
В кошику
од. на суму грн.
| NTMFS4C05NT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 11.9A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 1972 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 770mW (Ta), 33W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 11.9A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 1972 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 770mW (Ta), 33W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
на замовлення 8286 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 42.62 грн |
| 10+ | 30.97 грн |
| 100+ | 20.51 грн |
| 500+ | 17.15 грн |
| NTMFS4C10NT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 8.2A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 15 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 750mW (Ta), 23.6W (Tc)
Rds On (Max) @ Id, Vgs: 6.95mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Description: MOSFET N-CH 30V 8.2A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 15 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 750mW (Ta), 23.6W (Tc)
Rds On (Max) @ Id, Vgs: 6.95mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
на замовлення 1137 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 43.39 грн |
| 12+ | 25.89 грн |
| 100+ | 16.61 грн |
| 500+ | 11.81 грн |
| NTS245SFT1G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 45V 2A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Current - Reverse Leakage @ Vr: 120 µA @ 45 V
Description: DIODE SCHOTTKY 45V 2A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Current - Reverse Leakage @ Vr: 120 µA @ 45 V
на замовлення 5362 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.80 грн |
| 17+ | 18.58 грн |
| 100+ | 11.13 грн |
| 500+ | 9.67 грн |
| 1000+ | 6.58 грн |
| NVE4153NT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 20V 915MA SC89
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 1.82 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±6V
Package / Case: SC-89, SOT-490
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 300mW (Tj)
Rds On (Max) @ Id, Vgs: 230mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 915mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Description: MOSFET N-CH 20V 915MA SC89
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 1.82 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±6V
Package / Case: SC-89, SOT-490
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 300mW (Tj)
Rds On (Max) @ Id, Vgs: 230mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 915mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
на замовлення 54376 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 51.92 грн |
| 10+ | 30.59 грн |
| 100+ | 19.73 грн |
| 500+ | 14.11 грн |
| 1000+ | 12.69 грн |
| NTMFS4C06NT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 11A/69A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 770mW (Ta), 30.5W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 69A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 11A/69A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 770mW (Ta), 30.5W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 69A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
на замовлення 1875 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 65.09 грн |
| 10+ | 39.03 грн |
| 100+ | 25.42 грн |
| 500+ | 18.36 грн |
| NTMFS4C09NT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 9A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 30A, 10V
Power Dissipation (Max): 760mW (Ta), 25.5W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1252 pF @ 15 V
Description: MOSFET N-CH 30V 9A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 30A, 10V
Power Dissipation (Max): 760mW (Ta), 25.5W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1252 pF @ 15 V
на замовлення 5310 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 80.59 грн |
| 10+ | 48.58 грн |
| 100+ | 31.87 грн |
| 500+ | 23.16 грн |
| FGA6560WDF |
![]() |
Виробник: onsemi
Description: IGBT TRENCH FS 650V 120A TO-3PN
Current - Collector Pulsed (Icm): 180 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 120 A
Gate Charge: 84 nC
Test Condition: 400V, 60A, 6Ohm, 15V
Switching Energy: 2.46mJ (on), 520µJ (off)
Td (on/off) @ 25°C: 25.6ns/71ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PN
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Reverse Recovery Time (trr): 110 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Power - Max: 306 W
Packaging: Tube
Description: IGBT TRENCH FS 650V 120A TO-3PN
Current - Collector Pulsed (Icm): 180 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 120 A
Gate Charge: 84 nC
Test Condition: 400V, 60A, 6Ohm, 15V
Switching Energy: 2.46mJ (on), 520µJ (off)
Td (on/off) @ 25°C: 25.6ns/71ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PN
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Reverse Recovery Time (trr): 110 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Power - Max: 306 W
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| FDMC86160ET100 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 100V 9A/43A POWER33
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 43A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V 9A/43A POWER33
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 43A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 79.20 грн |
| FDMC86260ET150 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 150V 5.4A/25A PWR33
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 25A (Tc)
Description: MOSFET N-CH 150V 5.4A/25A PWR33
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 25A (Tc)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 70.03 грн |
| FDMC86340ET80 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 14A/68A POWER33
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2775 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Description: MOSFET N-CH 80V 14A/68A POWER33
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2775 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 108.68 грн |
| FDMC86570LET60 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 18A/87A POWER33
Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 87A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 18A/87A POWER33
Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 87A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 87.60 грн |
| FDMS86150ET100 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 100V 16A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 128A (Tc)
Rds On (Max) @ Id, Vgs: 4.85mOhm @ 16A, 10V
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4065 pF @ 50 V
Description: MOSFET N-CH 100V 16A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 128A (Tc)
Rds On (Max) @ Id, Vgs: 4.85mOhm @ 16A, 10V
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4065 pF @ 50 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| FDMS86255ET150 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 150V 10A/63A POWER56
Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.3W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 150V 10A/63A POWER56
Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.3W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| FDMS86350ET80 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 25A/198A POWER56
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 198A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 8030 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Description: MOSFET N-CH 80V 25A/198A POWER56
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 198A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 8030 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 213.15 грн |
| FDMS86550ET60 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 32A/245A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 245A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 32A, 10V
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8235 pF @ 30 V
Description: MOSFET N-CH 60V 32A/245A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 245A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 32A, 10V
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8235 pF @ 30 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| FDMS86202ET120 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 120V 13.5/102A PWR56
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 102A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4585 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Description: MOSFET N-CH 120V 13.5/102A PWR56
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 102A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4585 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 189.67 грн |
| FDMC86160ET100 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 100V 9A/43A POWER33
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 43A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 10V
Description: MOSFET N-CH 100V 9A/43A POWER33
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 43A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 10V
на замовлення 27583 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 241.77 грн |
| 10+ | 151.63 грн |
| 100+ | 105.47 грн |
| 500+ | 80.47 грн |
| 1000+ | 74.52 грн |
| FDMC86260ET150 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 150V 5.4A/25A PWR33
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 150V 5.4A/25A PWR33
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
на замовлення 6265 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 220.85 грн |
| 10+ | 137.97 грн |
| 100+ | 95.44 грн |
| 500+ | 72.53 грн |
| 1000+ | 67.05 грн |
| FDMC86340ET80 |
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Виробник: onsemi
Description: MOSFET N-CH 80V 14A/68A POWER33
Input Capacitance (Ciss) (Max) @ Vds: 2775 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 80V 14A/68A POWER33
Input Capacitance (Ciss) (Max) @ Vds: 2775 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
на замовлення 12030 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 328.56 грн |
| 10+ | 209.16 грн |
| 100+ | 148.14 грн |
| 500+ | 120.22 грн |
| FDMC86570LET60 |
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Виробник: onsemi
Description: MOSFET N-CH 60V 18A/87A POWER33
Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 87A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 18A/87A POWER33
Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 87A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
на замовлення 3156 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 228.60 грн |
| 10+ | 150.29 грн |
| 100+ | 108.82 грн |
| 500+ | 87.10 грн |
| 1000+ | 80.83 грн |
| FDMS86150ET100 |
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Виробник: onsemi
Description: MOSFET N-CH 100V 16A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 128A (Tc)
Rds On (Max) @ Id, Vgs: 4.85mOhm @ 16A, 10V
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4065 pF @ 50 V
Description: MOSFET N-CH 100V 16A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 128A (Tc)
Rds On (Max) @ Id, Vgs: 4.85mOhm @ 16A, 10V
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4065 pF @ 50 V
на замовлення 1317 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 585.83 грн |
| 10+ | 384.60 грн |
| 100+ | 282.84 грн |
| 500+ | 262.95 грн |
| FDMS86255ET150 |
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Виробник: onsemi
Description: MOSFET N-CH 150V 10A/63A POWER56
Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.3W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 150V 10A/63A POWER56
Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.3W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 257 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 492.84 грн |
| 10+ | 315.05 грн |
| 100+ | 231.50 грн |
| FDMS86350ET80 |
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Виробник: onsemi
Description: MOSFET N-CH 80V 25A/198A POWER56
Input Capacitance (Ciss) (Max) @ Vds: 8030 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 198A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 80V 25A/198A POWER56
Input Capacitance (Ciss) (Max) @ Vds: 8030 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 198A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 4555 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 543.99 грн |
| 10+ | 354.90 грн |
| 100+ | 259.26 грн |
| 500+ | 235.77 грн |
| FDMS86550ET60 |
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Виробник: onsemi
Description: MOSFET N-CH 60V 32A/245A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 245A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 32A, 10V
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8235 pF @ 30 V
Description: MOSFET N-CH 60V 32A/245A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 245A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 32A, 10V
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8235 pF @ 30 V
на замовлення 2275 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 631.55 грн |
| 10+ | 415.64 грн |
| 100+ | 307.87 грн |
| FDMS86202ET120 |
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Виробник: onsemi
Description: MOSFET N-CH 120V 13.5/102A PWR56
Input Capacitance (Ciss) (Max) @ Vds: 4585 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 102A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 120V 13.5/102A PWR56
Input Capacitance (Ciss) (Max) @ Vds: 4585 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 102A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 8545 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 464.17 грн |
| 10+ | 301.47 грн |
| 100+ | 223.56 грн |
| FDBL0065N40 |
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Виробник: onsemi
Description: MOSFET N-CH 40V 300A 8HPSOF
Input Capacitance (Ciss) (Max) @ Vds: 15900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 296 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 429W (Tj)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 300A 8HPSOF
Input Capacitance (Ciss) (Max) @ Vds: 15900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 296 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 429W (Tj)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 142.47 грн |
| FDBL0090N40 |
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Виробник: onsemi
Description: MOSFET N-CH 40V 240A 8HPSOF
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 357W (Tj)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 240A 8HPSOF
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 357W (Tj)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| FDBL0630N150 |
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Виробник: onsemi
Description: MOSFET N-CH 150V 169A 8HPSOF
Input Capacitance (Ciss) (Max) @ Vds: 5805 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 500W (Tj)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 169A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 150V 169A 8HPSOF
Input Capacitance (Ciss) (Max) @ Vds: 5805 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 500W (Tj)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 169A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| FSA551UCX |
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Виробник: onsemi
Description: IC AUDIO SWITCH DUAL SPST 9WLCSP
Number of Channels: 2
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST
Voltage - Supply, Single (V+): 1.5V ~ 3V
Supplier Device Package: 9-WLCSP (1.22x1.22)
-3db Bandwidth: 240MHz
On-State Resistance (Max): 600mOhm
Applications: Audio
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 9-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Description: IC AUDIO SWITCH DUAL SPST 9WLCSP
Number of Channels: 2
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST
Voltage - Supply, Single (V+): 1.5V ~ 3V
Supplier Device Package: 9-WLCSP (1.22x1.22)
-3db Bandwidth: 240MHz
On-State Resistance (Max): 600mOhm
Applications: Audio
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 9-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| FDBL0065N40 |
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Виробник: onsemi
Description: MOSFET N-CH 40V 300A 8HPSOF
Input Capacitance (Ciss) (Max) @ Vds: 15900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 296 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 429W (Tj)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 300A 8HPSOF
Input Capacitance (Ciss) (Max) @ Vds: 15900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 296 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 429W (Tj)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
на замовлення 2993 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 374.28 грн |
| 10+ | 240.65 грн |
| 100+ | 172.66 грн |
| 500+ | 157.59 грн |
| FDBL0090N40 |
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Виробник: onsemi
Description: MOSFET N-CH 40V 240A 8HPSOF
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 357W (Tj)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 240A 8HPSOF
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 357W (Tj)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 400.63 грн |
| 10+ | 346.61 грн |
| FDBL0630N150 |
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Виробник: onsemi
Description: MOSFET N-CH 150V 169A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 169A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 80A, 10V
Power Dissipation (Max): 500W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5805 pF @ 75 V
Description: MOSFET N-CH 150V 169A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 169A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 80A, 10V
Power Dissipation (Max): 500W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5805 pF @ 75 V
на замовлення 769 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 497.49 грн |
| 10+ | 323.03 грн |
| 100+ | 235.03 грн |
| 500+ | 210.67 грн |
| FSA551UCX |
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Виробник: onsemi
Description: IC AUDIO SWITCH DUAL SPST 9WLCSP
Number of Channels: 2
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST
Voltage - Supply, Single (V+): 1.5V ~ 3V
Supplier Device Package: 9-WLCSP (1.22x1.22)
-3db Bandwidth: 240MHz
On-State Resistance (Max): 600mOhm
Applications: Audio
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 9-UFBGA, WLCSP
Packaging: Cut Tape (CT)
Description: IC AUDIO SWITCH DUAL SPST 9WLCSP
Number of Channels: 2
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST
Voltage - Supply, Single (V+): 1.5V ~ 3V
Supplier Device Package: 9-WLCSP (1.22x1.22)
-3db Bandwidth: 240MHz
On-State Resistance (Max): 600mOhm
Applications: Audio
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 9-UFBGA, WLCSP
Packaging: Cut Tape (CT)
на замовлення 681 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 117.79 грн |
| 10+ | 101.33 грн |
| 25+ | 96.17 грн |
| 100+ | 69.30 грн |
| 250+ | 61.24 грн |
| 500+ | 58.02 грн |
| NCS333SN2T1G |
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Виробник: onsemi
Description: IC OPAMP ZERO-DRIFT 1 CIRC 5TSOP
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 1.8 V
Current - Output / Channel: 25 mA
Number of Circuits: 1
Part Status: Obsolete
Supplier Device Package: 5-TSOP
Voltage - Input Offset: 10 µV
Current - Input Bias: 60 pA
Gain Bandwidth Product: 350 kHz
Slew Rate: 0.1V/µs
Current - Supply: 17µA
Operating Temperature: -40°C ~ 105°C
Amplifier Type: Zero-Drift
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: SOT-23-5 Thin, TSOT-23-5
Packaging: Tape & Reel (TR)
Description: IC OPAMP ZERO-DRIFT 1 CIRC 5TSOP
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 1.8 V
Current - Output / Channel: 25 mA
Number of Circuits: 1
Part Status: Obsolete
Supplier Device Package: 5-TSOP
Voltage - Input Offset: 10 µV
Current - Input Bias: 60 pA
Gain Bandwidth Product: 350 kHz
Slew Rate: 0.1V/µs
Current - Supply: 17µA
Operating Temperature: -40°C ~ 105°C
Amplifier Type: Zero-Drift
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: SOT-23-5 Thin, TSOT-23-5
Packaging: Tape & Reel (TR)
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| NCS333SQ3T2G |
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Виробник: onsemi
Description: IC OPAMP ZERO-DRIFT 1 CIRC SC88A
Gain Bandwidth Product: 350 kHz
Slew Rate: 0.1V/µs
Current - Supply: 17µA
Operating Temperature: -40°C ~ 105°C
Amplifier Type: Zero-Drift
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 1.8 V
Current - Output / Channel: 25 mA
Number of Circuits: 1
Part Status: Obsolete
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Voltage - Input Offset: 10 µV
Current - Input Bias: 60 pA
Description: IC OPAMP ZERO-DRIFT 1 CIRC SC88A
Gain Bandwidth Product: 350 kHz
Slew Rate: 0.1V/µs
Current - Supply: 17µA
Operating Temperature: -40°C ~ 105°C
Amplifier Type: Zero-Drift
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 1.8 V
Current - Output / Channel: 25 mA
Number of Circuits: 1
Part Status: Obsolete
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Voltage - Input Offset: 10 µV
Current - Input Bias: 60 pA
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| FDMA6676PZ |
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Виробник: onsemi
Description: MOSFET P-CH 30V 11A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 15 V
Description: MOSFET P-CH 30V 11A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 15 V
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| FGH40T65SHD-F155 |
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Виробник: onsemi
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31.8 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19.2ns/65.6ns
Switching Energy: 1.01mJ (on), 297µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 72.2 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 268 W
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31.8 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19.2ns/65.6ns
Switching Energy: 1.01mJ (on), 297µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 72.2 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 268 W
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 322.36 грн |
| 10+ | 205.88 грн |
| 450+ | 122.43 грн |
| 900+ | 107.06 грн |
| 1350+ | 105.66 грн |



























